Advanced capacitor nano-electromechanical chip second generation powerful unit and reverse thrust system

Abstract

The present application relates to the technical field of nanoelectromechanical systems (NEMS), and discloses a second-generation powerful unit and reverse thrust system of an advanced capacitive nanoelectromechanical chip, including side pillars, a diaphragm and a substrate, wherein the diaphragm is fixed on the side pillars; the side pillars are fixed on the substrate; the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate; a first diaphragm support structure and a second diaphragm support structure are sequentially provided in the cavity below the diaphragm to support the diaphragm. Two layers of diaphragm support structures are added below the diaphragm, thereby adding two elastic forces, that is, through five force balances, three upward elastic forces and one downward electrostatic force, and one gravity, the space utilization rate CU is improved. Solving the problem of receiving and transmitting ultrasound at a high sound pressure in a propagation medium through a nanoelectromechanical chip (CNUT) is essentially solving the contradiction between high transmission voltage and exceeding the structural design limit.

Description

Technical Field

[0001] The present application relates to the technical field of nano-electromechanical systems (NEMS), and in particular to a second-generation powerful unit and reverse thrust system of an advanced capacitive nano-electromechanical chip. Background Art

[0002] In the field of integrated circuit / chip technology, especially VLSI design in the field of nano-directional acoustic energy, specifically for capacitive nano-electromechanical (CNUT) chip array units in nano-electromechanical (NEMS) chip design. In ordinary capacitive micro-electromechanical ultrasonic transducers (CMUT), the movement mechanism of the diaphragm is driven by the electrostatic attraction (non-linear downward) applied between the diaphragm and the substrate (i.e., the positive and negative electrodes). In addition, the diaphragm itself is also affected by its own gravity (volume force: downward) and counteracts the mechanical (elastic) force of the diaphragm itself (linear upward). These three act together on the diaphragm and are in a state of dynamic equilibrium. The specific force analysis is as follows: Figure 1 shown.

[0003] Where A is the electrode area; ε0 is the dielectric constant of the capacitor cavity (vacuum);

[0004] g const : Gravity acceleration of the application; m: Diaphragm mass;

[0005] Fs: mechanical force Fs=K×w; Fg: gravity g=m×g const ;

[0006] Fe: electrostatic force Fe = ε0 × A × V 2 / (2×(g o -w) 2 );

[0007] Balance of three forces: Fs=Fe+Fg.

[0008] In the force analysis of the diaphragm, three forces are mainly considered: electrostatic force Fe (surface force, downward direction), gravity Fg (volume force, downward direction) and mechanical force Fs (recovery elastic force, upward direction). Among them, the electrostatic force Fe is significantly enhanced when the object size is less than 1mm, becoming the dominant force, and increases with the increase of displacement w and the quadratic growth of voltage V. Gravity Fg is relatively small when the object size is less than 1mm and is not the dominant force. The mechanical force Fs is related to the material properties and has nothing to do with the size. It increases linearly with the increase of displacement w.

[0009] However, existing CMUT products have voltage-related design defects. Specifically, because the linear force and nonlinear force increase and decrease with the amplitude, the displacement of the diaphragm is limited, usually less than 1 / 3 of the cavity height (CU <33%). This is because when the diaphragm displacement exceeds this limit, the electrostatic force Fe will grow rapidly, causing the upper electrode to adhere to the lower electrode of the substrate, resulting in a short circuit and CMUT failure. This limitation is a globally recognized theoretical conclusion, that is, in the existing technology, the voltage between the upper and lower electrodes must not exceed the collapse voltage to avoid failure problems caused by excessive diaphragm amplitude.

[0010] Figure 2 A cross-sectional panoramic view of a conventional CMUT is shown, further illustrating the structure and principle of the prior art.

[0011] In summary, in view of the voltage design defects in existing CMUT products, an improved capacitive nanoelectromechanical chip array unit design is proposed to improve the displacement range and working efficiency of the diaphragm. Summary of the invention

[0012] In order to solve the problem of transmitting and receiving ultrasound at a high sound pressure in a propagation medium through a nanoelectromechanical chip (CNUT), the essence is to solve the contradiction between high transmission voltage and exceeding the structural design limit (positive and negative poles attracting each other and causing chip failure). This application provides an advanced capacitive nanoelectromechanical chip second-generation strong unit and reverse thrust system.

[0013] In the first aspect, the present application provides a second generation powerful unit of an advanced capacitor nano-electromechanical chip, which adopts the following technical solution:

[0014] A second generation powerful unit of an advanced capacitive nano-electromechanical chip, comprising a side support, a diaphragm and a substrate, wherein the diaphragm is fixed on the side support; the side support is fixed on the substrate; the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate;

[0015] A first diaphragm support structure and a second diaphragm support structure are sequentially arranged in the cavity below the diaphragm for supporting the diaphragm, and the first diaphragm support structure and the second diaphragm support structure are fixed on the side pillars; the first diaphragm support structure is located below the diaphragm, and the second diaphragm support structure is located on the side of the first diaphragm support structure away from the diaphragm; the second diaphragm support structure is located below the first diaphragm support structure.

[0016] By adopting the above technical solutions, the capacitance effect and nano-scale mechanical structure are used to achieve efficient energy conversion; compared with the traditional CMUT, it has a higher sound pressure output. By precisely designing the size and shape of the cavity, the emission direction and frequency characteristics of the ultrasound can be optimized. The diaphragm support structure provides additional support and stability to ensure that the diaphragm can still work normally under the high-voltage emission voltage. It helps to reduce the deformation and fatigue of the diaphragm and extend the service life of the CNUT. In view of the contradiction between the propagation of ultrasound at high sound pressure in the medium and the material and structural limitations of the CNUT, the second-generation CNUT unit has achieved a breakthrough through innovative design. It can withstand higher emission voltages while ensuring efficient ultrasonic emission, thereby increasing the propagation distance and sound intensity of the ultrasound. The first diaphragm support structure is directly located under the diaphragm and is the main support structure of the diaphragm; it provides the necessary mechanical support to ensure that the diaphragm can vibrate stably when subjected to voltage. At the same time, the design of the first diaphragm support structure can also affect the vibration mode and frequency response of the diaphragm. The second diaphragm support structure is located on the side of the first diaphragm support structure away from the diaphragm; the second diaphragm support structure provides additional support for the first diaphragm support structure, thereby enhancing the stability of the entire diaphragm support structure. This helps reduce the deformation and fatigue of the diaphragm during vibration and improves the service life of the CNUT. The vibration characteristics and frequency response of the CNUT can be further adjusted by adjusting the material, size and shape of the second diaphragm support structure. This provides more design flexibility to achieve specific application requirements. The dual-structure support design significantly enhances the stability of the diaphragm support structure, allowing the CNUT to maintain a stable working state under high-voltage transmission voltage. By precisely designing the parameters of the first and second diaphragm support structures, the vibration characteristics and frequency response of the CNUT can be optimized to meet specific application requirements. The dual-structure support design helps reduce the deformation and fatigue of the diaphragm, thereby extending the service life of the CNUT.

[0017] Optionally, the first diaphragm support structure and the second diaphragm support structure are annular structures, and the first diaphragm support structure, the second diaphragm support structure and the peripheral side edges of the diaphragm are aligned; the first diaphragm support structure, the second diaphragm support structure and the diaphragm are concentrically arranged.

[0018] By adopting the above technical solution, the first diaphragm support structure, the second diaphragm support structure and the diaphragm are all arranged around the same center, ensuring the symmetry and stability of the structure; it helps to reduce the asymmetry during the vibration process, thereby improving the vibration efficiency and performance of the CNUT. The radius corresponding to the inner ring of the first diaphragm support structure is smaller than the radius corresponding to the inner ring of the second diaphragm support structure, which means that the second diaphragm support structure provides additional support for the first diaphragm support structure in the radial direction. This design of radius difference helps to enhance the overall stiffness of the structure while maintaining the flexibility of the diaphragm. The outer peripheral edges of the first diaphragm support structure, the second diaphragm support structure and the diaphragm are aligned to ensure the compactness and integrity of the structure. This alignment design helps to reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. Therefore, the annular structure design enhances the overall stability of the CNUT, so that the diaphragm can maintain a stable shape and position during vibration. By precisely controlling the radius difference between the first diaphragm support structure and the second diaphragm support structure, the vibration mode and frequency response of the CNUT can be optimized. The compact structural design and aligned edges reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. The ring structure design helps to disperse the stress of the diaphragm during vibration, reduce deformation and fatigue, and thus extend the service life of the CNUT.

[0019] Optionally, the material of the first diaphragm support structure includes: silicon dioxide, silicon nitride or single crystal silicon;

[0020] The material of the second diaphragm support structure includes silicon dioxide, silicon nitride or single crystal silicon.

[0021] Optionally, a total thickness dimension Y of the first diaphragm support structure and the second diaphragm support structure ranges from 0.7um to 2.5um;

[0022] The thickness of the first diaphragm support structure accounts for 91.3% to 71% of the total thickness Y.

[0023] The thickness dimension of the second diaphragm support structure accounts for 8.7% to 29% of the total thickness dimension Y.

[0024] Optionally, the distance from the outer ring edge to the inner ring edge of the first diaphragm support structure is the width dimension K of the first diaphragm support structure, and the lateral dimension of the chip is the chip length D; the ratio of the width dimension K of the first diaphragm support structure to the chip length D is in the range of 20% to 90%.

[0025] Optionally, the width dimension from the outer edge to the inner edge of the second diaphragm support structure is the width dimension T of the second diaphragm support structure; the ratio of the width dimension T of the second diaphragm support structure to the width dimension K of the first diaphragm support structure is in the range of 10% to 50%.

[0026] Optionally, the chip length D ranges from 0.2 mm to 1.998 mm.

[0027] Optionally, the 3D structure composed of the diaphragm and the substrate has the following structures:

[0028] The first type: the 3D structure composed of the diaphragm and the substrate has a circular orthographic projection and a rectangular side projection, and the 3D structure is cylindrical as a whole; the orthographic projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped, and the side projections are both rectangular, and the 3D structures are both ring-shaped columns;

[0029] The second type: the 3D structure composed of the diaphragm and the substrate has a square overall front projection, a rectangular side projection, and the 3D structure is in the shape of a square column as a whole; the first diaphragm support structure and the second diaphragm support structure are both in the shape of a ring with a square outside and a circular inside, and the side projections are both rectangular, and the 3D structures are both in the shape of a ring column with a square outside and a circular inside;

[0030] The third type: the overall positive projection of the 3D structure composed of the diaphragm and the substrate is a regular polygon, the side projection is a rectangle, and the 3D structure as a whole is a regular polygonal column; the positive projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped with an outer regular polygon and an inner circle, and the side projections are both rectangles, and the 3D structures are both in the shape of a ring column with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4;

[0031] Fourth type: the 3D structure composed of the diaphragm and the substrate has an elliptical orthographic projection and a rectangular orthographic projection, and the 3D structure is an elliptical cylinder as a whole; the orthographic projections of the first diaphragm support structure and the second diaphragm support structure are both elliptical ring-shaped, and the side projections are both rectangular, and the 3D structures are both elliptical ring-shaped;

[0032] The fifth type: the overall frontal projection of the 3D structure composed of the diaphragm and the substrate is a rectangle, the side projection is a rectangle, and the 3D structure as a whole is a rectangular column; the frontal projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped with an outer rectangle and an inner ellipse, and the side projections are both rectangles, and the 3D structures are both ring-shaped columns with an outer rectangle and an inner ellipse.

[0033] Optionally, the substrate includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer arranged in sequence; the first insulating layer is located in the cavity, the negative electrode layer / zero electrode layer is located on the side of the first insulating layer away from the cavity, the second insulating layer is located on the side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on the side of the second insulating layer away from the negative electrode layer / zero electrode layer.

[0034] Optionally, the material of the substrate is set as follows:

[0035] The material of the substrate is set as follows:

[0036] The first insulating layer: silicon nitride, silicon dioxide, boron nitride or aluminum oxide;

[0037] The negative electrode layer / zero electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or zinc aluminum;

[0038] The second insulating layer: silicon dioxide, silicon nitride, boron nitride or aluminum oxide;

[0039] The structural layer: single crystal silicon or polycrystalline silicon;

[0040] The material of the side pillars is set as follows: silicon dioxide, polycrystalline silicon or single crystal silicon.

[0041] Optionally, the total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer is in the range of 1 um to 7 um; the thickness proportions from top to bottom are as follows:

[0042] The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z;

[0043] The thickness of the negative electrode layer / zero electrode layer accounts for 2% to 21% of the total thickness Z;

[0044] The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

[0045] Optionally, the thickness of the structural layer ranges from 20um to 300um.

[0046] Optionally, the diaphragm includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

[0047] Optionally, the material of the diaphragm is set as follows:

[0048] The third insulating layer: silicon nitride, silicon dioxide, boron nitride or aluminum oxide;

[0049] The positive electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or zinc aluminum;

[0050] The fourth insulating layer includes silicon nitride, silicon dioxide, boron nitride or aluminum oxide.

[0051] Optionally, the total thickness dimension X of the diaphragm ranges from 0.7um to 5um, and the thickness proportions from top to bottom are as follows:

[0052] The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X;

[0053] The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X;

[0054] The fourth insulating layer accounts for 81% to 31% of the total thickness X.

[0055] Optionally, the distance from the bottom end of the diaphragm to the top end of the substrate in the cavity is a cavity depth C; the cavity depth C ranges from 1 um to 20 um.

[0056] Optionally, the cavity is evacuated, filled with an inert gas, or filled with a high-pressure gas.

[0057] Optionally, the vibration frequency range of the chip unit is 15khz~361khz, and the bandwidth range is 1khz~10khz.

[0058] Optionally, a voltage is applied between the diaphragm and the substrate, and the value range of CU is: 36.5%-76%, wherein when the value range of CU is 36.5%~70%, the normalized voltage and the normalized spacing show a positive linear growth.

[0059] In a second aspect, the present application also discloses a reverse thrust system:

[0060] A reverse thrust system, based on any of the above-mentioned advanced capacitive nano-electromechanical chip second-generation powerful units, uses the diaphragm movement in the chip CNUT second-generation unit to push the medium molecules to move, and the medium molecules generate an equal and opposite reaction force on the CNUT unit; the medium molecules include nitrogen molecules and oxygen molecules in the air, or water molecules in water, or particles or molecules in space.

[0061] Optionally, before the chip is packaged, the weight of the second generation unit of the chip CNUT = the volume occupied by the material of each layer × density × gravitational acceleration; thrust = reaction force; thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit.

[0062] To summarize, the present application includes at least one of the following beneficial technical effects: adding a two-layer diaphragm support structure under the diaphragm, thereby adding two elastic forces, that is, five-force balance, including three upward elastic forces, one downward electrostatic force and one gravity, ultimately improving the space utilization rate CU.

[0063] The reverse thrust system utilizes the diaphragm movement of the CNUT second-generation unit to push the medium molecules, thereby generating a reaction force; by calculating the thrust and thrust-to-weight ratio, the performance and efficiency of the system can be evaluated.

[0064] The present invention can realize chip-level ultrasonic high-power emission in the form of a highly integrated CNUT chip, combined with the directional characteristics of ultrasound, and combined with sensitive sensors to achieve a high-quality combination of long distance, high power, and ultra-sensitivity, thereby realizing various future science fiction applications of various chip-level ultrasonic directional sound energy. At the same time, it greatly improves the applications of ultrasonic scalpel, ultrasonic treatment, ultrasonic depth imaging, ultrasonic long-distance fish sonar imaging, ultrasonic suspension, ultrasonic power, ultrasonic flight, etc., greatly reduces the physical mass of the end side of the transmitting equipment, and improves the carrying capacity of the effective detection load of the vehicle. BRIEF DESCRIPTION OF THE DRAWINGS

[0065] Figure 1 This is the schematic diagram of the traditional CMUT design.

[0066] Figure 2 This is a panoramic view of the traditional CMUT cross section.

[0067] Figure 3 This is a 2D cross-sectional view of the second-generation chip unit of this application.

[0068] Figure 4 This is an enlarged structural diagram of the diaphragm support of the present application (left side).

[0069] Figure 5 This is the chip unit size diagram of this application.

[0070] Figure 6 It is a schematic diagram of the parameter XYZ size position.

[0071] Figure 7 It is a schematic diagram of various external structures of this application.

[0072] Figure 8 This is a space utilization curve diagram of the present application where the CU is 36.5%.

[0073] Fig. 9 This is a space utilization curve diagram of the present application when the CU is 54%.

[0074] Fig.10 This is a space utilization curve diagram when the CU of this application is 63%.

[0075] Fig.11 This is a space utilization curve diagram when the CU of this application is 66%.

[0076] Fig.12 This is a space utilization curve diagram when the CU of this application is 70%.

[0077] Fig.13 This is a space utilization curve diagram when the CU of this application is 76%.

[0078] Fig.14 This is the vibration mode diagram when the characteristic frequency is 74487+333.36iHz.

[0079] Fig.15 This is the vibration mode diagram when the characteristic frequency is 2.1529E5+333.47iHz.

[0080] Fig.16 This is the vibration mode diagram when the characteristic frequency is 3.8934E5+333.74iHz.

[0081] Fig.17 This is the vibration mode diagram when the characteristic frequency is 6.7491E5+334.54iHz.

[0082] Fig.18 This is the vibration mode diagram when the characteristic frequency is 9.818E5+335.86iHz.

[0083] Fig.19 This is the vibration mode diagram when the characteristic frequency is 1.3635E6+338.19iHz.

[0084] Fig. 20 This is the corresponding frequency curve when the frequency range is 13~15khz / 2khz, D is 1998um, the outside of the chip is fresh water, and the inside of the chip is air.

[0085] Fig.21 This is the corresponding frequency curve when the frequency range is 73~83khz / 10khz, D is 200um, the outside of the chip is argon, and the inside of the chip is air.

[0086] Fig. 22 This is the corresponding frequency curve when the frequency range is 93~94khz / 1khz, D is 200um, the outside of the chip is fresh water, and the inside of the chip is air.

[0087] Fig.23 This is the corresponding frequency curve when the frequency range is 152~154khz / 2khz, D is 614um, and there is air inside and outside the chip.

[0088] Fig.24This is the corresponding frequency curve when the frequency range is 356~361khz / 5khz, D is 100um, the outside of the chip is seawater, and the inside of the chip is air.

[0089] Fig.25 It is a simulation diagram of the direction of force in the embodiment of the present application.

[0090] Fig.26 This is a simulation diagram of the total reaction force when the size of chip D is 400 microns and the inert gas argon is sprayed to the outside of the chip (when the outside is argon gas) and the inside is air in a space environment.

[0091] Fig. 27 This is a simulation diagram of the total reaction force when the size of chip D is 1998 microns, in fresh water, with fresh water outside the chip and air inside.

[0092] Fig.28 This is a simulation diagram of the total reaction force when the size of chip D is 400 microns and the inside of the atmosphere and the outside and inside of the chip are all air.

[0093] Fig.29 This is a simulation diagram of the total reaction force when the size of chip D is 200 microns, in seawater, the outside of the chip is seawater, and the inside is air.

[0094] Fig.30 This is a simulation diagram of the total reaction force when the size of chip D is 400 microns and it is in fresh water, with fresh water outside the chip and air inside.

[0095] Fig.31 This is a simulation diagram of the total reaction force when the size of chip D is 614 microns and the inside of the atmosphere and the outside and inside of the chip are all air.

[0096] Description of the drawings: 1. Diaphragm; 2. Substrate; 3. Cavity; 4. Side support; 5. First diaphragm support; 6. Second diaphragm support. DETAILED DESCRIPTION

[0097] Embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings.

[0098] In the description of this specification, the description with reference to the terms "certain embodiments", "one embodiment", "some embodiments", "illustrative embodiments", "examples", "specific examples" or "some examples" means that the specific features, structures, materials or characteristics described in conjunction with the embodiments or examples are included in at least one embodiment or example of the present application. In this specification, the schematic representation of the above terms does not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner.

[0099] Embodiment 1

[0100] The present application embodiment discloses a second generation powerful unit of an advanced capacitor nano-electromechanical chip, referring to Figure 3 and Figure 4 , including a side support 4, a diaphragm 1 and a substrate 2, wherein the diaphragm 1 is fixed on the side support 4; the side support 4 is fixed on the substrate 2. The diaphragm 1 is located above the substrate 2, and a cavity 3 is provided between the diaphragm 1 and the substrate 2. Below the diaphragm 1, a first diaphragm support 5 structure and a second diaphragm support 6 structure are sequentially provided in the cavity 3, for supporting the diaphragm 1, and the first diaphragm support 5 structure and the second diaphragm support 6 structure are fixed on the side support 4. The first diaphragm support 5 structure is located below the diaphragm 1, and the second diaphragm support 6 structure is located on the side of the first diaphragm support 5 structure away from the diaphragm 1; the second diaphragm support 6 structure is located below the first diaphragm support 5 structure.

[0101] Utilizing the capacitance effect and nano-scale mechanical structure, efficient energy conversion is achieved; compared with the traditional CMUT, it has a higher sound pressure output. By precisely designing the size and shape of the cavity 3, the emission direction and frequency characteristics of the ultrasound can be optimized. The diaphragm 1 support structure provides additional support and stability to ensure that the diaphragm 1 can still work normally under the high-voltage emission voltage. It helps to reduce the deformation and fatigue of the diaphragm 1 and extend the service life of the CNUT. In view of the contradiction between the propagation of ultrasound at high sound pressure in the medium and the limitations of the CMUT materials and structures, the second-generation CNUT unit has achieved a breakthrough through innovative design. It can withstand higher emission voltages while ensuring efficient ultrasonic emission, thereby increasing the propagation distance and sound intensity of the ultrasound.

[0102] The first diaphragm support 5 structure is directly located under the diaphragm 1 and is the main supporting structure of the diaphragm 1; it provides the necessary mechanical support to ensure that the diaphragm 1 can vibrate stably when subjected to voltage. At the same time, the design of the first diaphragm support 5 structure can also affect the vibration mode and frequency response of the diaphragm 1. The second diaphragm support 6 structure is located on the side of the first diaphragm support 5 structure away from the diaphragm 1; the second diaphragm support 6 structure provides additional support for the first diaphragm support 5 structure, thereby enhancing the stability of the entire diaphragm 1 support structure. This helps to reduce the deformation and fatigue of the diaphragm 1 during vibration and improve the service life of the CNUT. By adjusting the material, size and shape of the second diaphragm support 6 structure, the vibration characteristics and frequency response of the CNUT can be further adjusted. This provides more design flexibility to achieve specific application requirements. The dual-structure support design significantly enhances the stability of the diaphragm 1 support structure, allowing the CNUT to maintain a stable working state under high-voltage transmission voltage. By accurately designing the parameters of the first and second diaphragm support 6 structures, the vibration characteristics and frequency response of the CNUT can be optimized to meet specific application requirements. The double-structure support design helps to reduce deformation and fatigue of the diaphragm 1, thereby extending the service life of the CNUT.

[0103] The first diaphragm support 5 structure and the second diaphragm support 6 structure are annular structures, and the outer peripheral edges of the first diaphragm support 5 structure, the second diaphragm support 6 structure and the diaphragm 1 are aligned; the first diaphragm support 5 structure, the second diaphragm support 6 structure and the diaphragm 1 are concentrically arranged.

[0104] The first diaphragm support 5 structure, the second diaphragm support 6 structure and the diaphragm 1 are all arranged around the same center, ensuring the symmetry and stability of the structure; it helps to reduce the asymmetry during the vibration process, thereby improving the vibration efficiency and performance of the CNUT. The radius corresponding to the inner ring of the first diaphragm support 5 structure is smaller than the radius corresponding to the inner ring of the second diaphragm support 6 structure, which means that the second diaphragm support 6 structure provides additional support for the first diaphragm support 5 structure in the radial direction. This design of radius difference helps to enhance the overall stiffness of the structure while maintaining the flexibility of the diaphragm 1. The outer peripheral edges of the first diaphragm support 5 structure, the second diaphragm support 6 structure and the diaphragm 1 are aligned to ensure the compactness and integrity of the structure. This alignment design helps to reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. Therefore, the annular structure design enhances the overall stability of the CNUT, so that the diaphragm 1 can maintain a stable shape and position during vibration. By precisely controlling the radius difference between the first diaphragm support 5 structure and the second diaphragm support 6 structure, the vibration mode and frequency response of the CNUT can be optimized. The compact structural design and aligned edges reduce energy loss during vibration and improve the energy conversion efficiency of the CNUT. The ring structure design helps to disperse the stress of the diaphragm 1 during vibration, reduce deformation and fatigue, and thus extend the service life of the CNUT.

[0105] The material of the first diaphragm support 5 structure includes: silicon dioxide, silicon nitride or single crystal silicon.

[0106] The material of the second diaphragm support 6 structure includes: silicon dioxide, silicon nitride or single crystal silicon.

[0107] In this embodiment, it is configured that the material of the first diaphragm support 5 structure is silicon dioxide, and the material of the second diaphragm support 6 structure is silicon nitride.

[0108] The total thickness dimension Y of the first diaphragm support 5 structure and the second diaphragm support 6 structure ranges from 0.7um to 2.5um; the total thickness dimension Y is set to 0.7um in this embodiment, and is set to 0.7um, 1um, 1.5um, 2um or 2.5um in other embodiments.

[0109] The thickness dimension of the first diaphragm support 5 structure accounts for a proportion of the total thickness dimension Y, and the ratio range is 91.3% to 71%; in the present embodiment, it is set to 71.4%, and in other embodiments, it is set to 91.3%, 91%, 90%, 89%, 88%, 87%, 86%, 85%, 84%, 83%, 82%, 81%, 80%, 79%, 78%, 77%, 76%, 75%, 74%, 73%, 72% or 71%.

[0110] The thickness of the second diaphragm support 6 structure accounts for 8.7% to 29% of the total thickness Y. In this embodiment, it is set to 28.6%, and in other embodiments, it is set to 8.7%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28% or 29%.

[0111] The distance from the outer ring edge to the inner ring edge of the first diaphragm support 5 structure is the width dimension K of the first diaphragm support 5 structure, and the transverse dimension of the chip is the chip length D; the width dimension K of the first diaphragm support 5 structure relative to the chip length D is in the range of 20% to 90%. In this embodiment, it is set to 25%, and in other embodiments, it is set to 20%, 21%, 22%, 23%, 24%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 40%, 50%, 60%, 70%, 80% or 90%.

[0112] The width dimension from the outer edge to the inner edge of the second diaphragm support 6 structure is the width dimension T of the second diaphragm support 6 structure; the width dimension T of the second diaphragm support 6 structure is 10% to 50% relative to the width dimension K of the first diaphragm support 5 structure. In this embodiment, it is set to 50%, and in other embodiments, it is set to 10%, 20%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%, 48% or 49%.

[0113] The chip length D has a size range of 0.2 mm to 1.998 mm, and is set to 0.6 mm in this embodiment, and is set to 0.2 mm, 0.25 mm, 0.3 mm, 0.35 mm, 0.4 mm, 0.8 mm, 1.0 mm, 1.5 mm, 1.9 mm, or 1.998 mm in other embodiments.

[0114] The 3D structure composed of the diaphragm 1 and the substrate 2 has the following structures:

[0115] The first one: reference Figure 7 In (a), the 3D structure composed of the diaphragm 1 and the substrate 2 has a circular orthographic projection and a rectangular side projection, and the 3D structure is cylindrical as a whole; the orthographic projections of the first diaphragm support 5 structure and the second diaphragm support 6 structure are both ring-shaped, and the side projections are both rectangular, and the 3D structures are both ring-shaped;

[0116] The second type: reference Figure 7 In (b), the overall frontal projection of the 3D structure composed of the diaphragm 1 and the substrate 2 is a square, and the side projection is a rectangle, and the 3D structure is in the shape of a square column as a whole; the frontal projections of the first diaphragm support 5 structure and the second diaphragm support 6 structure are both in the shape of a ring with a square outside and a circle inside, and the side projections are both rectangular, and the 3D structures are both in the shape of a ring column with a square outside and a circle inside;

[0117] The third type: reference Figure 7 In (c), the overall positive projection of the 3D structure composed of the diaphragm 1 and the substrate 2 is a regular polygon, the side projection is a rectangle, and the 3D structure as a whole is a regular polygonal column; the positive projections of the first diaphragm support 5 structure and the second diaphragm support 6 structure are both ring-shaped with an outer regular polygon and an inner circle, and the side projections are both rectangles, and the 3D structures are both ring-shaped with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4;

[0118] The fourth type: reference Figure 7In (d), the overall front projection of the 3D structure composed of the diaphragm 1 and the substrate 2 is an ellipse, the side projection is a rectangle, and the 3D structure is an elliptical cylinder; the front projections of the first diaphragm support 5 structure and the second diaphragm support 6 structure are both elliptical rings, and the side projections are both rectangular, and the 3D structures are both elliptical ring cylinders;

[0119] Fifth: Reference Figure 7 In (e), the overall frontal projection of the 3D structure composed of the diaphragm 1 and the substrate 2 is a rectangle, and the side projection is a rectangle, and the 3D structure as a whole is a rectangular column; the frontal projections of the first diaphragm support 5 structure and the second diaphragm support 6 structure are both ring-shaped with an outer rectangle and an inner ellipse, and the side projections are both rectangles, and the 3D structures are both ring-shaped with an outer rectangle and an inner ellipse.

[0120] This embodiment is the first structure, and in other implementations, it can also be any one of the second, third, fourth or fifth structures.

[0121] The substrate 2 includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer which are arranged in sequence; the first insulating layer is located in the cavity 3, the negative electrode layer / zero electrode layer is located on the side of the first insulating layer away from the cavity 3, the second insulating layer is located on the side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on the side of the second insulating layer away from the negative electrode layer / zero electrode layer.

[0122] The material setting of substrate 2 is shown in Table 1:

[0123] Table 1 Materials of substrate and side pillars

[0124]

[0125] In this embodiment, the thickness of the second insulating layer, the negative electrode layer / zero electrode layer and the first insulating layer from top to bottom are 1 micron silicon nitride, 0.1 micron aluminum, and 1 micron silicon dioxide; the structural layer is single crystal silicon; and the side pillar 4 is single crystal silicon.

[0126] In other embodiments, it may be 1 micron silicon dioxide, 0.1 micron aluminum zinc, 1 micron silicon nitride; the structural layer is polycrystalline silicon; and the side pillars 4 are silicon dioxide, polycrystalline silicon or single crystal silicon.

[0127] The total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer ranges from 1um to 7um; the thickness proportions from top to bottom are as follows:

[0128] The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z;

[0129] The thickness of the negative electrode layer / zero electrode layer accounts for 2%~21% of the total thickness Z;

[0130] The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

[0131] The total thickness Z is set to 2.1 um in this embodiment, and is set to 1 um, 2 um, 3 um, 4 um, 5 um, 6 um or 7 um in other embodiments.

[0132] In this embodiment, the thickness of the first insulating layer is set to 47% of the total thickness Z. In other embodiments, the thickness of the first insulating layer accounts for 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46% or 48% of the total thickness Z.

[0133] The thickness of the negative electrode layer / zero electrode layer accounts for 4% of the total thickness Z in this embodiment, and is set to 2%, 3%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20% or 21% in other embodiments.

[0134] The thickness of the second insulating layer accounts for 47% of the total thickness Z in this embodiment, and is set to 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68% or 81% in other embodiments.

[0135] The thickness of the structural layer ranges from 20um to 300um; the more preferred thickness range of the structural layer is from 200um to 300um. The thickness of the structural layer is set to 200um in this embodiment, and is set to 20um, 30um, 40um, 50um, 60um, 70um, 80um, 90um, 100um, 215um, 225um, 250um, 275um or 300um in other embodiments.

[0136] The diaphragm 1 includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity 3, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity 3, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

[0137] The material setting of the diaphragm 1 is shown in Table 2:

[0138] Table 2 Diaphragm material table

[0139]

[0140] In this embodiment, the material settings and corresponding thicknesses of the third insulating layer, the positive electrode layer and the fourth insulating layer from top to bottom are: 1 micron silicon nitride, 0.1 micron aluminum, and 1 micron silicon dioxide.

[0141] In other embodiments, it may be 1 micron silicon dioxide, 0.1 micron aluminum zinc, and 1 micron silicon dioxide.

[0142] The total thickness dimension X of the diaphragm 1 ranges from 0.7um to 5um, and the thickness proportions from top to bottom are as follows:

[0143] The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X;

[0144] The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X;

[0145] The fourth insulating layer accounts for 81% to 31% of the total thickness X.

[0146] The total thickness X is set to 2.1 um in this embodiment, and is set to 0.7 um, 1 um, 2 um, 3 um, 4 um or 5 um in other embodiments.

[0147] The thickness of the third insulating layer accounts for 47% of the total thickness X in this embodiment, and is set to 17%, 18%, 19%, 20%, 21%, 22%, 23%, 24%, 25%, 26%, 27%, 28%, 29%, 30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46% or 48% in other embodiments.

[0148] The thickness of the positive electrode layer accounts for 4% of the total thickness X in this embodiment, and is set to 2%, 3%, 5%, 6%, 7%, 8%, 9%, 10%, 11%, 12%, 13%, 14%, 15%, 16%, 17%, 18%, 19%, 20%, and 21% in other embodiments.

[0149] The thickness of the fourth insulating layer accounts for 47% of the total thickness X in the present embodiment, and is set to 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 48%, 49%, 50%, 51%, 52%, 53%, 54%, 55%, 56%, 57%, 58%, 59%, 60%, 61%, 62%, 63%, 64%, 65%, 66%, 67%, 68% or 81% in other embodiments.

[0150] The distance from the bottom end of the diaphragm 1 to the top end of the substrate 2 in the cavity 3 is the cavity depth C; the range of the cavity depth C is 1um to 20um. In this embodiment, the cavity depth C is set to 17um, and in other embodiments, it is set to 1um, 2.5um, 5um, 7.5um, 8um, 10um, 15um, 17.5um or 20um.

[0151] The cavity 3 is vacuum-set in this embodiment, and can be filled with inert gas or high-pressure gas in other embodiments. The inert gas is nitrogen N2, helium He, neon Ne, argon Ar, krypton Kr or xenon Xe. The high-pressure gas is 1 to 5 times the air.

[0152] Diaphragm 1 supports are added on both sides under the diaphragm 1. After simulation, the CU value (space utilization) ranges from 36.5% to 76%. Among them, when the CU value ranges from 36.5% to 70%, the normalized voltage and the normalized spacing increase linearly, which lays a good physical foundation for the chip unit for chip designers.

[0153] Reference Figure 8 , CU value is 36.5%, the outside of the chip is argon, the inside is air, and D is 400um.

[0154] Reference Fig. 9 , CU value is 54%, the outside of the chip is seawater, the inside is air, and D is 400um.

[0155] Reference Fig.10 , CU value is 63%, the outside of the chip is seawater, the inside is air, and D is 200um.

[0156] Reference Fig.11 , CU value is 66%, there is air inside and outside the chip, and D is 614um.

[0157] Reference Fig.12 , CU value is 70%, there is air inside and outside the chip, and D is 1998um.

[0158] Reference Fig.13, CU value is 76%, the outside of the chip is fresh water, the inside is air, and D is 400um.

[0159] The above CU values ​​are all greater than 33% of the traditional Cmut.

[0160] In this embodiment, D is 400um, and the array is divided into six forms:

[0161] Fig.14 It is the vibration mode diagram when the characteristic frequency is 74487+333.36iHz, surface: displacement size (μm).

[0162] Fig.15 It is the vibration mode diagram when the characteristic frequency is 2.1529E5+333.47iHz, surface: displacement size (μm).

[0163] Fig.16 It is the vibration mode diagram when the characteristic frequency is 3.8934E5+333.74iHz, surface: displacement size (μm).

[0164] Fig.17 It is the vibration mode diagram when the characteristic frequency is 6.7491E5+334.54iHz, surface: displacement size (μm).

[0165] Fig.18 It is the vibration mode diagram when the characteristic frequency is 9.818E5+335.86iHz, surface: displacement size (μm).

[0166] Fig.19 It is the vibration mode diagram when the characteristic frequency is 1.3635E6+338.19iHz, surface: displacement size (μm).

[0167] The frequency curve shown shows the vibration frequency and bandwidth characteristics of the present invention, the low frequency point and the high frequency point and the bandwidth. The vibration frequency range of the chip unit is: the vibration frequency range of the chip unit is 15khz~361khz, and the bandwidth range is 1khz~10khz. This performance makes CMUT have a wider application prospect in the fields of ultrasonic imaging.

[0168] Reference Fig. 20 , the frequency range is 13~15khz, the bandwidth is 2khz, D is 1998um, the outside of the chip is fresh water, and the inside of the chip is air, and the corresponding frequency curve.

[0169] Reference Fig.21 , the frequency range is 73~83khz, the bandwidth is 10khz, D is 400um, the outside of the chip is argon, and the inside of the chip is air, and the corresponding frequency curve.

[0170] Reference Fig. 22, the frequency range is 93~94khz, the bandwidth is 1khz, D is 400um, the outside of the chip is fresh water, and the inside of the chip is air, and the corresponding frequency curve.

[0171] Reference Fig.23 , the frequency range is 152~154khz, the bandwidth is 2khz, D is 614um, and the chip is filled with air inside and outside, and the corresponding frequency and displacement curve.

[0172] Reference Fig.24 , the frequency range is 356~361khz, the bandwidth is 5khz, D is 200um, the outside of the chip is seawater, and the inside of the chip is air, and the corresponding frequency curve.

[0173] Wherein, material breakdown voltage: stoichiometric ratio of SiNx (fraction x of nitrogen in SiNx): when x>1.32, at this time, the breakdown voltage of 1um thick SiN is 1100V. All configurations of the present invention are within this voltage range.

[0174] The present invention can realize chip-level ultrasonic high-power emission in the form of a highly integrated CNUT chip, combined with the directional characteristics of ultrasound. Combined with sensitive sensors, it can achieve a high-quality combination of large distance, high power and ultra-sensitivity, thereby realizing various future science fiction applications of various chip-level ultrasonic directional sound energy. At the same time, it greatly improves ultrasonic applications such as ultrasonic knives, ultrasonic treatment, ultrasonic depth imaging, ultrasonic long-distance fish sonar imaging, ultrasonic suspension, ultrasonic power, ultrasonic flight, ultrasonic noise isolation, ultrasonic light control, ultrasonic touch, ultrasonic expulsion, ultrasonic pest control, etc., greatly reduces the physical mass of the end side of the transmitting equipment (the chip of the present invention is in grams), and improves the carrying capacity of the effective detection load of the vehicle.

[0175] Embodiment 2

[0176] An embodiment of the present application discloses a reverse thrust system.

[0177] Ultrasonic waves are mechanical waves, and their essence is to push the molecules in the medium to move forward in front of the array. According to Newton's third law (action and reaction), the movement of the diaphragm 1 of the unit of the CNUT of the present invention promotes the movement of matter (such as nitrogen molecules and oxygen molecules in the air; or water molecules in water; or particles or molecules in space). The reaction force from the external medium of the chip to the unit of the CNUT of the present invention is equal to the force of the chip on the external medium. For the specific direction of the reaction force, refer to Fig.25 Simulation diagram analysis.

[0178] After simulation, it was found that the second-generation unit chip of the capacitive nanoelectromechanical chip (CNUT) was subjected to a thrust range of 0.0035N~ 0.045N~0.05N~0.058N~0.2056N~1.872N when the external media were argon, fresh water, sea water, and air.

[0179] (1) When the chip D is 400 microns in size, in a space environment, inert gas argon is sprayed onto the outside of the chip (when the outside is argon gas) and the inside is air, the maximum peak value of the total reaction force on the Y axis reaches 0.0035 Newton within one arc cycle of the X axis. Fig.26 .

[0180] (2) When the chip D is 1998 microns in size, in fresh water, with fresh water outside the chip and air (1.29 kg / m^3) inside, the maximum peak value of the total reaction force on the Y axis reaches 0.045 Newton within one arc cycle of the X axis. Fig. 27 .

[0181] (3) When the size of chip D is 400 microns, the atmosphere, the outside and inside of the chip are all air (1.29 kg / m^3), and the maximum peak value of the total reaction force on the Y axis reaches 0.05 Newton within one arc cycle of the X axis. Fig.28 .

[0182] (4) When the chip D is 200 microns in size, in seawater, the chip is surrounded by seawater on the outside and air (1.29 kg / m^3) on the inside, the maximum peak value of the total reaction force on the Y axis reaches 0.058 Newton within one arc cycle of the X axis. Fig.29 .

[0183] (5) When the chip D is 400 microns in size, in fresh water, with fresh water outside the chip and air (1.29 kg / m^3) inside, the maximum peak value of the total reaction force on the Y axis reaches 0.2056 Newton within one arc cycle of the X axis. Fig.30 .

[0184] (6) When the chip D is 614 microns in size, and the atmosphere, the chip's exterior and interior are all air (1.29 kg / m^3), the reverse thrust is 1.872 N. Fig.31 .

[0185] Thrust to weight ratio:

[0186] Before the chip is packaged, the weight of the CNUT chip = the volume of each layer of material × density × gravitational acceleration, thrust = reaction force, and the thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit; therefore, the thrust-to-weight ratio is shown in Table 3:

[0187] Table 3 Chip thrust-to-weight ratio

[0188]

[0189]

[0190] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and cannot be understood as limitations on the present application. Ordinary technicians in this field can change, modify, replace and modify the above embodiments within the scope of the present application.

Claims

1. A second generation powerful unit of an advanced capacitor nano-electromechanical chip, characterized in that: It comprises a side support, a diaphragm and a substrate, wherein the diaphragm is fixed on the side support; the side support is fixed on the substrate; the diaphragm is located above the substrate, and a cavity is provided between the diaphragm and the substrate; A first diaphragm support structure and a second diaphragm support structure are sequentially arranged in the cavity below the diaphragm for supporting the diaphragm, and the first diaphragm support structure and the second diaphragm support structure are fixed on the side support pillars; the first diaphragm support structure is located below the diaphragm, and the second diaphragm support structure is located on a side of the first diaphragm support structure away from the diaphragm; the second diaphragm support structure is located below the first diaphragm support structure; A voltage is applied between the diaphragm and the substrate, and the value range of CU is: 36.5%-76%, wherein when the value range of CU is 36.5%~70%, the normalized voltage and the normalized spacing show a positive linear growth; the value of CU is the ratio of the displacement of the diaphragm to the deepest position and the depth of the cavity, representing the utilization rate of the occupied cavity by the diaphragm movement.

2. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1 is characterized in that: The first diaphragm support structure and the second diaphragm support structure are annular structures, and the first diaphragm support structure, the second diaphragm support structure and the outer peripheral edges of the diaphragm are aligned; the first diaphragm support structure, the second diaphragm support structure and the diaphragm are concentrically arranged.

3. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 2 is characterized in that: The material of the first diaphragm support structure includes: silicon dioxide, silicon nitride or single crystal silicon; The material of the second diaphragm support structure includes silicon dioxide, silicon nitride or single crystal silicon.

4. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 2 is characterized in that: The total thickness dimension Y of the first diaphragm support structure and the second diaphragm support structure ranges from 0.7um to 2.5um; The thickness of the first diaphragm support structure accounts for 91.3% to 71% of the total thickness Y. The thickness dimension of the second diaphragm support structure accounts for 8.7% to 29% of the total thickness dimension Y.

5. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 4 is characterized in that: The distance from the outer ring edge to the inner ring edge of the first diaphragm support structure is the width dimension K of the first diaphragm support structure, and the lateral dimension of the chip is the chip length D; the ratio of the width dimension K of the first diaphragm support structure to the chip length D is in the range of 20% to 90%.

6. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 5 is characterized in that: The width dimension from the outer edge to the inner edge of the second diaphragm support structure is the width dimension T of the second diaphragm support structure; the ratio of the width dimension T of the second diaphragm support structure to the width dimension K of the first diaphragm support structure is in the range of 10% to 50%.

7. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 5, characterized in that: The chip length D ranges from 0.2 mm to 1.998 mm.

8. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to any one of claims 2 to 7, characterized in that: The 3D structure composed of the diaphragm and the substrate has the following structures: The first type: the 3D structure composed of the diaphragm and the substrate has a circular orthographic projection and a rectangular side projection, and the 3D structure is cylindrical as a whole; the orthographic projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped, and the side projections are both rectangular, and the 3D structures are both ring-shaped columns; The second type: the 3D structure composed of the diaphragm and the substrate has a square overall front projection, a rectangular side projection, and the 3D structure is in the shape of a square column as a whole; the first diaphragm support structure and the second diaphragm support structure are both in the shape of a ring with a square outside and a circular inside, and the side projections are both rectangular, and the 3D structures are both in the shape of a ring column with a square outside and a circular inside; The third type: the overall positive projection of the 3D structure composed of the diaphragm and the substrate is a regular polygon, the side projection is a rectangle, and the 3D structure as a whole is a regular polygonal column; the positive projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped with an outer regular polygon and an inner circle, and the side projections are both rectangles, and the 3D structures are both in the shape of a ring column with an outer regular polygon and an inner circle; wherein each side of the regular polygon is equal, and the number of sides is greater than 4; Fourth type: the 3D structure composed of the diaphragm and the substrate has an elliptical orthographic projection and a rectangular orthographic projection, and the 3D structure is an elliptical cylinder as a whole; the orthographic projections of the first diaphragm support structure and the second diaphragm support structure are both elliptical ring-shaped, and the side projections are both rectangular, and the 3D structures are both elliptical ring-shaped; The fifth type: the overall frontal projection of the 3D structure composed of the diaphragm and the substrate is a rectangle, the side projection is a rectangle, and the 3D structure as a whole is a rectangular column; the frontal projections of the first diaphragm support structure and the second diaphragm support structure are both ring-shaped with an outer rectangle and an inner ellipse, and the side projections are both rectangles, and the 3D structures are both ring-shaped columns with an outer rectangle and an inner ellipse.

9. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1, characterized in that: The substrate includes a first insulating layer, a negative electrode layer / zero electrode layer, a second insulating layer and a structural layer which are arranged in sequence; the first insulating layer is located in the cavity, the negative electrode layer / zero electrode layer is located on a side of the first insulating layer away from the cavity, the second insulating layer is located on a side of the negative electrode layer / zero electrode layer away from the first insulating layer, and the structural layer is located on a side of the second insulating layer away from the negative electrode layer / zero electrode layer.

10. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 9, characterized in that: The material of the substrate is set as follows: The material of the substrate is set as follows: The first insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The negative electrode layer / zero electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or zinc aluminum; The second insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The structural layer: single crystal silicon or polycrystalline silicon; The material of the side pillars is set as follows: silicon dioxide, polycrystalline silicon or single crystal silicon.

11. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 9, characterized in that: The total thickness Z of the first insulating layer, the negative electrode layer / zero electrode layer and the second insulating layer is in the range of 1um to 7um; the thickness proportions from top to bottom are as follows: The thickness of the first insulating layer accounts for 17% to 48% of the total thickness Z; The thickness of the negative electrode layer / zero electrode layer accounts for 2% to 21% of the total thickness Z; The thickness of the second insulating layer accounts for 81% to 31% of the total thickness Z.

12. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 9, characterized in that: The thickness of the structural layer ranges from 20um to 300um.

13. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1, characterized in that: The diaphragm includes a third insulating layer, a positive electrode layer and a fourth insulating layer; the fourth insulating layer is located in the cavity, the positive electrode layer is located on a side of the fourth insulating layer away from the cavity, and the third insulating layer is located on a side of the positive electrode layer away from the fourth insulating layer.

14. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 13, characterized in that: The material setting of the diaphragm is as follows: The third insulating layer: silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide; The positive electrode layer: aluminum, silver, gold, copper, tungsten, platinum, zinc or aluminum zinc; The fourth insulating layer is made of silicon nitride, silicon dioxide, boron nitride, aluminum oxide, aluminum nitride, tantalum oxide, hafnium oxide or silicon carbide.

15. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 13, characterized in that: The total thickness dimension X of the diaphragm ranges from 0.7um to 5um, and the thickness proportions from top to bottom are as follows: The thickness of the third insulating layer accounts for 17% to 48% of the total thickness X; The thickness of the positive electrode layer accounts for 2% to 21% of the total thickness X; The fourth insulating layer accounts for 81% to 31% of the total thickness X.

16. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1, characterized in that: The distance from the bottom end of the diaphragm to the top end of the substrate in the cavity is the cavity depth C; the range of the cavity depth C is 1um~20um.

17. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1, characterized in that: The cavity is evacuated and filled with inert gas or high-pressure gas.

18. The second generation powerful unit of the advanced capacitor nano-electromechanical chip according to claim 1, characterized in that: The vibration frequency range of the chip unit is 15khz~361khz, and the bandwidth range is 1khz~10khz.

19. A reverse thrust system, based on the advanced capacitive nano-electromechanical chip second generation powerful unit according to any one of claims 1 to 18, characterized in that: The movement of the diaphragm in the second-generation powerful unit of the advanced capacitor nano-electromechanical chip is used to drive the movement of the dielectric molecules, and the dielectric molecules generate an equal and opposite reaction force on the second-generation powerful unit of the advanced capacitor nano-electromechanical chip; the dielectric molecules include nitrogen molecules and oxygen molecules in the air, or water molecules in water, or particles or molecules in space.

20. The thrust reverser system according to claim 19, characterized in that: Before the chip is packaged, the weight of the second-generation high-power unit of the advanced capacitive nano-electromechanical chip = the volume occupied by the material of each layer × density × gravitational acceleration; thrust = reaction force; the thrust-to-weight ratio of the chip unit = thrust / weight of the chip unit.

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