Lower electrode arrangement, semiconductor process control method and semiconductor process apparatus

Abstract

This invention provides a lower electrode device, a semiconductor process control method, and semiconductor process equipment. The lower electrode device includes a support component, a focusing ring, and a control power supply. The support component supports a wafer and is electrically connected to an RF source. The RF source applies RF to the support component, causing it to generate a self-bias voltage. The focusing ring surrounds the support component and is capable of surrounding the wafer supported on the support component. The positive terminal of the control power supply is electrically connected to the RF source, and the negative terminal is electrically connected to the focusing ring. The control power supply applies a control voltage to the focusing ring, which includes a self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring. The lower electrode device, semiconductor process control method, and semiconductor process equipment provided by this invention can improve the accuracy of the control voltage, simplify its calculation, and improve its real-time performance.

Description

Technical Field

[0001] This invention relates to the field of semiconductor technology, and more specifically, to a lower electrode device, a semiconductor process control method, and semiconductor process equipment. Background Technology

[0002] In plasma etching, the wafer to be etched is held on an electrostatic chuck (ESC). A focus ring (FR) surrounds the ESC, which is electrically connected to a radio frequency (RF) source. The RF source applies radio frequency to the ESC, causing it to generate a self-bias voltage that attracts plasma to etch the wafer. The focus ring surrounds the wafer to concentrate the plasma, thereby improving the etching rate and uniformity of the etching morphology at the wafer edge and enhancing the overall plasma etching effect.

[0003] In plasma etching processes, both the wafer and the focusing ring are etched by plasma. As the plasma etching time increases, the thickness of the focusing ring gradually decreases. This causes a change in the shape of the plasma sheath layer above the wafer edge region, resulting in a tilt in the incident direction of the plasma at the wafer edge region (e.g., ...). Figure 1 As shown, the thickness of the focusing ring affects the etching morphology of the wafer edge region and thus the plasma etching effect. Therefore, in existing technologies, when the thickness of the focusing ring decreases, a control voltage is applied to the focusing ring to control the shape of the plasma sheath layer above the wafer edge region.

[0004] However, in the existing technology, the accuracy of the control voltage is low, the control of the shape of the plasma sheath above the wafer edge region is poor, which affects the plasma etching effect. Furthermore, the calculation of the control voltage value is relatively complex and has poor real-time performance. Summary of the Invention

[0005] The present invention aims to solve at least one of the technical problems existing in the prior art, and proposes a lower electrode device, a semiconductor process control method and a semiconductor process equipment, which can improve the accuracy of control voltage, simplify the calculation of control voltage and improve the real-time performance of control voltage.

[0006] To achieve the objectives of this invention, a lower electrode device is provided, comprising a carrier component, a focusing ring, and a control power supply. The carrier component is used to carry a wafer and is electrically connected to an RF source. The RF source is used to apply RF to the carrier component, causing the carrier component to generate a self-bias voltage. The focusing ring is disposed around the carrier component and is capable of surrounding the wafer carried on the carrier component. The positive terminal of the control power supply is electrically connected to the RF source, and the negative terminal of the control power supply is electrically connected to the focusing ring. The control power supply is used to apply a control voltage to the focusing ring, the control voltage including the self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring.

[0007] Optionally, the lower electrode device further includes a feed component, which is electrically connected to the bottom of the carrier component and to the radio frequency source. The radio frequency source is used to load radio frequency onto the carrier component through the feed component. The positive terminal of the control power supply is electrically connected to the feed component so as to be electrically connected to the radio frequency source through the feed component.

[0008] Optionally, the lower electrode device further includes an electrical connection component, which is electrically connected to the focusing ring and the negative terminal of the control power supply, respectively, and the control power supply applies a control voltage to the focusing ring through the electrical connection component.

[0009] Optionally, the lower electrode device further includes a lower electrode component, which is disposed at the bottom of the supporting component. The feeding component and the electrical connection assembly are respectively disposed through the lower electrode component, and the feeding component and the electrical connection assembly are insulated from each other.

[0010] Optionally, the lower electrode component includes a conductive portion and an insulating portion. The insulating portion is annular and surrounds at least a portion of the conductive portion, and is located below the focusing ring corresponding to the focusing ring. The feed component is disposed through the conductive portion, and the electrical connection assembly is disposed through the conductive portion and the insulating portion, and is insulated from the conductive portion.

[0011] Optionally, the electrical connection assembly includes an electrical plug-in component, a conductive component, and an electrical connection component. The electrical plug-in component is used for plugging in the negative terminal of the control power supply. The electrical connection component is electrically connected to the focusing ring and is electrically connected to the electrical plug-in component through the conductive component.

[0012] Optionally, there are multiple electrical connection components and multiple conductive components. The multiple electrical connection components are arranged at circumferential intervals along the focusing ring, and the multiple electrical connection components are electrically connected to the electrical plug-in component one-to-one through the multiple conductive components.

[0013] Optionally, the lower electrode device further includes a pressure ring, which surrounds the support member and is located between the focusing ring and the lower electrode member, with a portion of the pressure ring pressed against a portion of the edge of the support member, and the electrical connection assembly passing through the pressure ring.

[0014] Optionally, the lower electrode device further includes a first filter component and / or a second filter component, wherein the positive terminal of the control power supply is electrically connected to the radio frequency source through the first filter component, and the negative terminal of the control power supply is electrically connected to the focusing ring through the second filter component.

[0015] Optionally, the control voltage is equal to the sum of the self-bias voltage and the compensation voltage.

[0016] The present invention also provides a semiconductor process control method, employing the lower electrode device as described in the present invention, the semiconductor process control method comprising:

[0017] The radio frequency source is controlled to apply radio frequency to the carrier component;

[0018] The output voltage of the control power supply is set to the compensation voltage corresponding to the thickness of the focusing ring.

[0019] The present invention also provides a semiconductor process apparatus, including a process chamber, a radio frequency source, and a lower electrode device as provided in the present invention, wherein the lower electrode device is configured to cooperate with the process chamber, and the radio frequency source is electrically connected to the carrier component.

[0020] The present invention has the following beneficial effects:

[0021] The lower electrode device provided by this invention, by electrically connecting the positive terminal of the control power supply to the radio frequency source, ensures that the reference potential of the control power supply is always at the same potential as the self-bias voltage of the supporting component. In other words, the reference potential of the control power supply can change with the self-bias voltage of the supporting component and always remain equal to it. Therefore, when setting the control voltage applied to the focusing ring by the control power supply, only the compensation voltage corresponding to the thickness of the focusing ring needs to be set, without needing to detect or set the self-bias voltage of the supporting component. That is, when applying the control voltage to the focusing ring through the control power supply, it is only necessary to control the radio frequency source to apply radio frequency to the supporting component and set the output voltage of the control power supply to the compensation voltage corresponding to the thickness of the focusing ring. This ensures that the voltage applied to the focusing ring by the control power supply includes both the self-bias voltage and the compensation voltage, thereby avoiding problems caused by detection errors or fluctuations in the self-bias voltage. This improves the accuracy of the control voltage, simplifies its calculation, and enhances its real-time performance.

[0022] The semiconductor process control method provided by this invention, using the lower electrode device provided by this invention, when applying a control voltage to the focusing ring through a control power supply, only needs to control the radio frequency source to apply radio frequency to the carrier component, and set the output voltage of the control power supply to a compensation voltage corresponding to the thickness of the focusing ring. This allows the voltage applied to the focusing ring by the control power supply to be a control voltage including a self-bias voltage and a compensation voltage, without needing to detect and set the self-bias voltage of the carrier component. This avoids problems caused by detection errors or fluctuations in the self-bias voltage, thereby improving the accuracy of the control voltage, simplifying the calculation of the control voltage, and improving the real-time performance of the control voltage.

[0023] The semiconductor process equipment provided by this invention, with the aid of the lower electrode device provided by this invention, can improve the accuracy of the control voltage, simplify the calculation of the control voltage, and improve the real-time performance of the control voltage. Attached Figure Description

[0024] Figure 1 This is a schematic diagram of the plasma sheath and the incident direction of the plasma when the thickness of the focusing ring decreases;

[0025] Figure 2 A schematic diagram of a lower electrode device and semiconductor process equipment provided in an embodiment of the present invention;

[0026] Figure 3 This is a partial front view schematic diagram of the lower electrode device provided in an embodiment of the present invention;

[0027] Figure 4 This is a partial top view of the lower electrode device provided in an embodiment of the present invention;

[0028] Figure 5 This is a schematic diagram of another structure of the lower electrode device and semiconductor process equipment provided in an embodiment of the present invention;

[0029] Figure 6 A flowchart of a semiconductor process control method provided in an embodiment of the present invention;

[0030] Explanation of reference numerals in the attached figures:

[0031] 1-Carrier component; 2-Focusing ring; 3-RF source; 31-Matching unit; 4-Control power supply; 5-Feed-in component; 6-Electrical connection assembly; 61-Electrical plug-in component; 62-Conductive component; 63-Electrical connection component; 7-Lower electrode component; 71-Conductive part; 72-Insulating part; 8-Pressure ring; 91-First filter component; 92-Second filter component; 100-Semiconductor process equipment; 101-Process chamber; 200-Wafer. Detailed Implementation

[0032] To enable those skilled in the art to better understand the technical solutions of the present invention, the lower electrode device, semiconductor process control method, and semiconductor process equipment provided by the present invention will be described in detail below with reference to the accompanying drawings.

[0033] like Figures 2-5 As shown, this embodiment of the invention provides a lower electrode device, including a support component 1, a focusing ring 2, and a control power supply 4. The support component 1 is used to support a wafer 200 and is electrically connected to an RF source 3. The RF source 3 is used to apply RF to the support component 1, causing the support component 1 to generate a self-bias voltage. The focusing ring 2 is disposed around the support component 1 and can surround the wafer 200 supported on the support component 1. The positive terminal of the control power supply 4 is electrically connected to the RF source 3, and the negative terminal of the control power supply 4 is electrically connected to the focusing ring 2. The control power supply 4 is used to apply a control voltage to the focusing ring 2. The control voltage includes a self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring 2.

[0034] The lower electrode device provided in this embodiment of the invention, by electrically connecting the positive terminal of the control power supply 4 to the radio frequency source 3, ensures that the reference potential of the control power supply 4 is always at the same potential as the self-bias voltage of the support component 1. In other words, the reference potential of the control power supply 4 can change with the self-bias voltage of the support component 1 and is always equal to it. Thus, when setting the control voltage applied to the focusing ring 2 by the control power supply 4, only the compensation voltage corresponding to the thickness of the focusing ring 2 needs to be set, without needing to detect or set the self-bias voltage of the support component 1. That is, when applying the control voltage to the focusing ring 2 through the control power supply 4, it is only necessary to control the radio frequency source 3 to apply radio frequency to the support component 1 and set the output voltage of the control power supply 4 to the compensation voltage corresponding to the thickness of the focusing ring 2. This ensures that the voltage applied to the focusing ring 2 by the control power supply 4 includes both the self-bias voltage and the compensation voltage, thereby avoiding problems caused by detection errors or fluctuations in the self-bias voltage. This improves the accuracy of the control voltage, simplifies its calculation, and enhances its real-time performance.

[0035] Specifically, during plasma processing, a negative voltage needs to be applied to the focusing ring 2 to concentrate the plasma. Therefore, the negative terminal of the control power supply 4 is electrically connected to the focusing ring 2, and the positive terminal of the control power supply 4 serves as the reference potential. The wafer 200 is supported on the support component 1, and the radio frequency source 3 applies radio frequency to the support component 1, causing the support component 1 to generate a self-bias voltage to attract plasma to bombard the wafer 200. Since the positive terminal of the control power supply 4 is electrically connected to the radio frequency source 3, the reference potential of the control power supply 4 can change with the change of the self-bias voltage of the support component 1 and is always equal to the self-bias voltage of the support component 1. In other words, the positive terminal of the control power supply 4 can be loaded with the self-bias voltage generated by the radio frequency on the support component 1. When applying control voltage to the focusing ring 2 via control power supply 4, the output voltage of control power supply 4 needs to be set. Since control power supply 4 has two output electrodes, namely positive and negative, the output voltage of control power supply 4 is the voltage difference between the positive and negative electrodes of control power supply 4. For example, when the voltage of the positive electrode is V1 and the output voltage is set to V2, the voltage of the negative electrode is V1-V2, that is, the control voltage applied to the focusing ring 2 is V1-V2.

[0036] In practical applications, the control voltage can optionally be -(|Vx|+ΔV), where Vx is the self-bias voltage generated by the bearing component 1, and ΔV is the compensation voltage. That is, the control voltage can optionally be equal to the sum of the self-bias voltage and the compensation voltage. In the prior art, since the positive terminal of the control power supply 4 is grounded, the voltage at the positive terminal of the control power supply 4 is 0V. Therefore, the output voltage of the control power supply 4 needs to be set to |Vx|+ΔV. This requires both setting the compensation voltage and detecting and setting the self-bias voltage of the bearing component 1 to ensure that the voltage at the negative terminal (i.e., the control voltage applied to the focusing ring 2) is -(|Vx|+ΔV). However, in this embodiment of the invention, since the positive terminal of the control power supply 4 is electrically connected to the radio frequency source 3, the reference voltage of the control power supply 4 can be... The reference potential of the control power supply 4 is always at the same potential as the self-bias voltage of the bearing component 1. In other words, the reference potential of the control power supply 4 can change with the change of the self-bias voltage of the bearing component 1 and is always equal to the self-bias voltage of the bearing component 1. Therefore, the voltage of the positive terminal of the control power supply 4 is always Vx. Only the output voltage of the control power supply 4 needs to be set to ΔV. That is, only the compensation voltage needs to be set, without detecting and setting the self-bias voltage of the bearing component 1, so that the voltage of the negative terminal (i.e., the control voltage applied to the focusing ring 2) can be -(|Vx|+ΔV).

[0037] Furthermore, in the prior art, when detecting the self-bias voltage of the carrier component 1, it is necessary to disconnect the electrical connection between the negative terminal of the control power supply 4 and the focusing ring 2. Then, when setting the output voltage of the control power supply 4, the negative terminal of the control power supply 4 is reconnected to the focusing ring 2. However, in this embodiment of the invention, since it is not necessary to detect and set the self-bias voltage of the carrier component 1, the negative terminal of the control power supply 4 can always be electrically connected to the focusing ring 2 without disconnecting the electrical connection between the negative terminal of the control power supply 4 and the focusing ring 2. This avoids problems caused by detection errors of the self-bias voltage or fluctuations in the self-bias voltage itself (e.g., self-bias voltage fluctuations caused by changes in the output waveform of the RF source 3 as a pulse source, or self-bias voltage fluctuations caused by switching between different RF sources 3 electrically connected to the same carrier component 1, or self-bias voltage fluctuations caused by interference from other devices, systems, or environmental factors (e.g., gas flow rate). This improves the accuracy of the control voltage, simplifies the calculation of the control voltage, and enhances the real-time performance of the control voltage.

[0038] In practical applications, the compensation voltage corresponding to the thickness of the focusing ring 2 can be measured using a measuring device such as a laser measuring instrument or a camera measuring instrument. Then, a compensation voltage is preset, and the process is carried out with the preset compensation voltage. The process effect is observed, and the preset compensation voltage is adjusted to make the process effect meet the process requirements. Thus, a compensation voltage corresponding to the thickness of the focusing ring 2 can be recorded. Then, when the thickness of the focusing ring 2 is reduced to the point that the process effect does not meet the process requirements, the above operation can be repeated to record another compensation voltage corresponding to the thickness of the focusing ring 2. This process can be repeated to obtain a table showing the relationship between the thickness of the focusing ring 2 and the compensation voltage, thereby enabling the setting of a compensation voltage corresponding to the thickness of the focusing ring 2.

[0039] In practical applications, when the focusing ring 2 is new, that is, when the thickness of the focusing ring 2 is in its initial state, the compensation power supply does not need to apply a control voltage to the focusing ring 2.

[0040] Optionally, the carrier component 1 can be an electrostatic chuck.

[0041] Optionally, the control power supply 4 can be a DC power supply, and the control voltage is a DC voltage.

[0042] In practical applications, the positive terminal of the control power supply 4 is insulated from the casing (for example, the positive terminal of the control power supply 4 and the casing can be suspended and not connected). Since the voltage of the positive terminal of the control power supply 4 is always equal to the self-bias voltage of the bearing component 1, which is Vx, possibly around -5000V, while the voltage of the casing of the control power supply 4 is 0V, the voltage difference between the positive terminal of the control power supply 4 and the casing voltage of the control power supply 4 is relatively large. In order to avoid arcing between the positive terminal of the control power supply 4 and the casing, the insulation and withstand voltage rating between the positive terminal of the control power supply 4 and the casing need to be greater than |Vx|.

[0043] like Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the lower electrode device may further include a feed component 5, which is electrically connected to the bottom of the support component 1. The radio frequency source 3 is electrically connected to the feed component 5 to load radio frequency onto the support component 1 through the feed component 5. The positive terminal of the control power supply 4 is electrically connected to the feed component 5 to be electrically connected to the radio frequency source 3 through the feed component 5.

[0044] Optionally, the feed component 5 can be electrically connected to the aluminum base at the bottom of the electrostatic chuck.

[0045] In other words, the RF source 3 is electrically connected to the feed-in component 5, the feed-in component 5 is electrically connected to the bottom of the carrier component 1, the RF source 3 is connected to the carrier component 1 through the feed-in component 5, and the RF source 3 applies RF to the carrier component 1 through the feed-in component 5. The RF source 3 is electrically connected to the feed-in component 5, and the positive terminal of the control power supply 4 is electrically connected to the feed-in component 5. The positive terminal of the control power supply 4 is also electrically connected to the RF source 3 through the feed-in component 5.

[0046] However, the positive terminal of the control power supply 4 is not limited to being electrically connected to the radio frequency source 3 via the feed-in component 5 (e.g., Figure 2 As shown), for example, such as Figure 5 As shown, in practical applications, a matching converter 31 is installed on the electrical connection path between the RF source 3 and the feed-in component 5. The positive terminal of the control power supply 4 can be electrically connected to the RF source 3 through the matching converter 31, or the positive terminal of the control power supply 4 can be electrically connected to the section located after the matching converter 31 on the electrical connection path between the RF source 3 and the feed-in component 5 (e.g., Figure 5 As shown), this also allows the positive terminal of the control power supply 4 to be electrically connected to the radio frequency source 3. In other words, the positive terminal of the control power supply 4 can be directly electrically connected to the feed-in component 5 (as shown). Figure 2 (As shown), it can also be directly electrically connected to the matching unit 31, or it can be electrically connected to the downstream end of the matching unit 31 on the electrical connection path between the RF source 3 and the feed-in component 5 (as shown). Figure 5 (As shown).

[0047] like Figure 3 and Figure 4As shown, in one embodiment of the present invention, the lower electrode device may further include an electrical connection component 6, which is electrically connected to the negative terminal of the focusing ring 2 and the control power supply 4, respectively. The control power supply 4 applies a control voltage to the focusing ring 2 through the electrical connection component 6.

[0048] In other words, the negative terminal of the control power supply 4 is electrically connected to the focusing ring 2 through the electrical connection component 6, and the control power supply 4 applies a control voltage to the focusing ring 2 through the electrical connection component 6.

[0049] like Figures 2-5 As shown, in one embodiment of the present invention, the lower electrode device may further include a lower electrode component 7, which is disposed at the bottom of the supporting component 1. The feed component 5 and the electrical connection component 6 are respectively disposed through the lower electrode component 7, and the feed component 5 and the electrical connection component 6 are insulated from each other.

[0050] The feed component 5 can be fixed using the lower electrode component 7; that is, the feed component 5 can be fixed within the lower electrode component 7. Since the lower electrode component 7 is located at the bottom of the support component 1, and the focusing ring 2 surrounds the support component 1, the electrical connection component 6 needs to pass through the lower electrode component 7 to allow it to electrically connect with the focusing ring 2. Because the feed component 5 is fixed within the lower electrode component 7, it is necessary to insulate the feed component 5 and the electrical connection component 6 to insulate the positive and negative terminals of the control power supply 4, preventing damage to the control power supply 4 or other devices due to short circuits or arcing.

[0051] like Figures 2-5 As shown, in one embodiment of the present invention, the lower electrode component 7 may include a conductive portion 71 and an insulating portion 72. The insulating portion 72 is annular and surrounds at least a portion of the conductive portion 71, and is located below the focusing ring 2 corresponding to the focusing ring 2. The feed component 5 is disposed through the conductive portion 71, and the electrical connection component 6 is disposed through the conductive portion 71 and the insulating portion 72, and is insulated from the conductive portion 71.

[0052] Specifically, the conductive part 71 may include a conductive base and a conductive protrusion disposed on the conductive base. The conductive base may be disc-shaped, and the conductive protrusion may be cylindrical. The radial dimension of the conductive protrusion may be smaller than the radial dimension of the conductive base. The insulating part 72 may be annular and disposed around the cylindrical conductive protrusion on the disc-shaped conductive base, thereby achieving that the insulating part 72 surrounds a portion of the conductive part 71. The conductive protrusion may correspond to the wafer 200 carried by the carrier member 1, and the insulating part 72 may correspond to the focusing ring 2. By allowing the feed member 5 to pass through the conductive part 71 and the electrical connection assembly 6 to pass through the conductive part 71 and the insulating part 72, and being insulated from the conductive part 71, insulation between the feed member 5 and the electrical connection assembly 6 can be achieved. The conductive part 71 may be provided with a through hole through which the power supply connection assembly 6 passes. By making the radial dimension of the through hole larger than the radial dimension of the electrical connection assembly 6, contact between the electrical connection assembly 6 and the conductive part 71 can be avoided, thereby achieving insulation between the electrical connection assembly 6 and the conductive part 71.

[0053] Optionally, the material of the conductive part 71 may include metal.

[0054] Optionally, the material of the insulating part 72 may include ceramic.

[0055] like Figure 3 and Figure 4 As shown, in one embodiment of the present invention, the electrical connection component 6 may include an electrical plug-in component 61, a conductive component 62, and an electrical connection component 63. The electrical plug-in component 61 is used for plugging in the negative terminal of the control power supply 4. The electrical connection component 63 is electrically connected to the focusing ring 2 and is electrically connected to the electrical plug-in component 61 through the conductive component 62.

[0056] Specifically, the electrical connector 61 can penetrate the conductive part 71 and extend into the insulating part 72, and the electrical connection part 63 can be electrically connected to the focusing ring 2 and electrically connected to the electrical connector 61 through the conductive part 62. In practical applications, the negative terminal of the control power supply 4 can be plugged into the electrical connector 61, and the control voltage of the control power supply 4 can be applied to the focusing ring 2 in sequence through the electrical connector 61, the conductive part 62 and the electrical connection part 63.

[0057] Optionally, the conductive component 62 may include a wire.

[0058] like Figure 4 As shown, in one embodiment of the present invention, there can be multiple electrical connection components 63 and multiple conductive components 62. The multiple electrical connection components 63 are arranged at intervals along the circumference of the focusing ring 2, and the multiple electrical connection components 63 are electrically connected to the electrical plug-in component 61 through the multiple conductive components 62.

[0059] For example, such as Figure 4As shown, there is one electrical plug-in component 61, six electrical connection components 63, and six conductive components 62. The six electrical connection components 63 are electrically connected to one electrical plug-in component 61 through the six conductive components 62. In this way, the control voltage of the control power supply 4 can be applied to the focusing ring 2 through multiple electrical connection components 63, thereby improving the uniformity of the control voltage applied to the focusing ring 2.

[0060] Optionally, the multiple electrical connection components 63 can be evenly spaced along the circumference of the focusing ring 2. This further improves the uniformity of the control voltage applied to the focusing ring 2.

[0061] like Figure 2 , Figure 3 and Figure 5 As shown, in one embodiment of the present invention, the lower electrode device may further include a pressure ring 8, which surrounds the support member 1 and is located between the focusing ring 2 and the lower electrode member 7. A portion of the pressure ring 8 is pressed onto a portion of the edge of the support member 1, and the electrical connection assembly 6 is disposed through the pressure ring 8.

[0062] Specifically, the carrier component 1 may include a carrier base and a carrier protrusion disposed on the carrier base. The radial dimension of the carrier protrusion may be smaller than the radial dimension of the carrier base, that is, the edge of the carrier base may protrude relative to the edge of the carrier protrusion. The carrier protrusion may be used to support the wafer 200. The pressure ring 8 may be located between the focusing ring 2 and the lower electrode component 7 and disposed on the insulating portion 72. A portion of the pressure ring 8 may be pressed onto the edge portion of the carrier base that protrudes relative to the edge of the carrier protrusion, thereby achieving partial pressing of the pressure ring 8 onto a portion of the edge of the carrier component 1. The pressure ring 8 can be used to press the carrier component 1 onto the lower electrode component 7. By disposing the pressure ring 8 on the insulating portion 72, insulation can be provided between the electrical connection component 6 and the lower electrode component 7 and the feed component 5 through the pressure ring 8. Specifically, the electrical connection component 63 may pass through the insulating portion 72 through the pressure ring 8 to be electrically connected to the insulating ring.

[0063] like Figure 2 and Figure 5 As shown, in one embodiment of the present invention, the lower electrode device may further include a first filter component 91 and / or a second filter component 92. The positive terminal of the control power supply 4 is electrically connected to the radio frequency source 3 through the first filter component 91, and the negative terminal of the control power supply 4 is electrically connected to the focusing ring 2 through the second filter component 92.

[0064] In other words, the first filter component 91 can be set on the path where the positive terminal of the control power supply 4 is electrically connected to the RF source 3, and the second filter component 92 can be set on the path where the negative terminal of the control power supply 4 is electrically connected to the focusing ring 2. With the help of the first filter component 91 and the second filter component 92, the RF can be filtered out, so that the voltage applied to the positive terminal of the control power supply 4 is the self-bias voltage generated by the RF on the carrier component 1, and the voltage applied to the focusing ring 2 is the self-bias voltage generated by the RF on the carrier component 1.

[0065] like Figure 6 As shown, this embodiment of the invention also provides a semiconductor process control method, which employs the lower electrode device provided in this embodiment of the invention. The semiconductor process control method may include:

[0066] S1, control the radio frequency source 3 to apply radio frequency to the carrier component 1;

[0067] S2, set the output voltage of the control power supply 4 to a compensation voltage corresponding to the thickness of the focusing ring 2.

[0068] The semiconductor process control method provided in this embodiment of the invention, using the lower electrode device provided in this embodiment of the invention, when applying a control voltage to the focusing ring 2 through the control power supply 4, only needs to control the radio frequency source 3 to apply radio frequency to the carrier component 1, and set the output voltage of the control power supply 4 to a compensation voltage corresponding to the thickness of the focusing ring 2. This allows the voltage applied to the focusing ring 2 by the control power supply 4 to be a control voltage including self-bias voltage and compensation voltage, without needing to detect and set the self-bias voltage of the carrier component 1. This avoids problems caused by detection errors or fluctuations in the self-bias voltage, thereby improving the accuracy of the control voltage, simplifying the calculation of the control voltage, and improving the real-time performance of the control voltage.

[0069] Specifically, when performing plasma processing, when applying a control voltage to the focusing ring 2 via the control power supply 4, a compensation voltage corresponding to the thickness of the focusing ring 2 can be selected first. Then, the radio frequency source 3 can be controlled to apply radio frequency to the carrier component 1, causing the carrier component 1 to generate a self-bias voltage. After that, the output voltage of the control power supply 4 can be set as the compensation voltage, so that a control voltage including the self-bias voltage and the compensation voltage can be applied to the focusing ring 2 through the negative terminal of the control power supply 4. After that, the plasma processing can be performed. After the plasma processing is completed, the radio frequency source 3 can be turned off. If the plasma processing needs to continue, the application of radio frequency to the carrier component 1 can be started from the control radio frequency source 3.

[0070] like Figure 2 and Figure 5As shown, this embodiment of the invention also provides a semiconductor process apparatus 100, including a process chamber 101, a radio frequency source 3, and a lower electrode device as provided in this embodiment of the invention. The lower electrode device is configured to cooperate with the process chamber 101, and the radio frequency source 3 is electrically connected to the carrier component 1.

[0071] The semiconductor process equipment 100 provided in this embodiment of the invention, by means of the lower electrode device provided in this embodiment of the invention, can improve the accuracy of the control voltage, simplify the calculation of the control voltage, and improve the real-time performance of the control voltage.

[0072] Optionally, the RF source 3, control power supply 4, first filter component 91 and second filter component 92 can all be located outside the process chamber 101, while the lower electrode component 7, bearing component 1, pressure ring 8 and focusing ring 2 can all be located inside the process chamber 101.

[0073] In summary, the lower electrode device, semiconductor process control method, and semiconductor process equipment 100 provided in the embodiments of the present invention can improve the accuracy of the control voltage, simplify the calculation of the control voltage, and improve the real-time performance of the control voltage.

[0074] It is understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present invention, and the present invention is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and essence of the present invention, and these modifications and improvements are also considered to be within the scope of protection of the present invention.

Claims

1. A lower electrode arrangement, characterized by The device includes a carrier component, a focusing ring, and a control power supply. The carrier component carries a wafer and is electrically connected to an RF source. The RF source applies RF to the carrier component, causing it to generate a self-bias voltage. The focusing ring surrounds the carrier component and is capable of surrounding the wafer carried on the carrier component. The positive terminal of the control power supply is electrically connected to the RF source, and the negative terminal is electrically connected to the focusing ring. The control power supply applies a control voltage to the focusing ring, which includes the self-bias voltage and a compensation voltage corresponding to the thickness of the focusing ring. The lower electrode device further includes a feed component, an electrical connection assembly, and a lower electrode component; The feed component is electrically connected to the bottom of the support component, and the positive terminal of the control power supply is electrically connected to the feed component. The electrical connection assembly is electrically connected to the focusing ring and the negative terminal of the control power supply, respectively. The lower electrode component includes a conductive portion and an insulating portion. The insulating portion is annular and surrounds at least a portion of the conductive portion, and is located below the focusing ring corresponding to the focusing ring. The feed component is disposed through the conductive portion, and the electrical connection assembly is disposed through the conductive portion and the insulating portion, and is insulated from the conductive portion.

2. The lower electrode arrangement of claim 1, wherein The radio frequency source is electrically connected to the feed-in component to load radio frequency onto the carrier component through the feed-in component, and the positive terminal of the control power supply is electrically connected to the feed-in component to be electrically connected to the radio frequency source through the feed-in component.

3. The lower electrode arrangement of claim 2, wherein, The control power supply applies a control voltage to the focusing ring through the electrical connection assembly.

4. The lower electrode arrangement of claim 3, wherein The lower electrode component is disposed at the bottom of the supporting component, the feed component and the electrical connection assembly are respectively disposed through the lower electrode component, and the feed component and the electrical connection assembly are insulated from each other.

5. The lower electrode arrangement of claim 3, wherein, The electrical connection assembly includes an electrical plug-in component, a conductive component, and an electrical connection component. The electrical plug-in component is used for plugging in the negative terminal of the control power supply. The electrical connection component is electrically connected to the focusing ring and is electrically connected to the electrical plug-in component through the conductive component.

6. The lower electrode arrangement of claim 5, wherein, The number of electrical connection components is multiple, the number of conductive components is multiple, the multiple electrical connection components are arranged at circumferential intervals along the focusing ring, and the multiple electrical connection components are electrically connected to the electrical plug-in component one by one through the multiple conductive components.

7. The lower electrode arrangement of claim 4, wherein, The lower electrode device further includes a pressure ring, which surrounds the support member and is located between the focusing ring and the lower electrode member. A portion of the pressure ring is pressed against a portion of the edge of the support member, and the electrical connection assembly passes through the pressure ring.

8. The lower electrode arrangement of claim 1, wherein, The lower electrode device further includes a first filter component and / or a second filter component. The positive terminal of the control power supply is electrically connected to the radio frequency source through the first filter component, and the negative terminal of the control power supply is electrically connected to the focusing ring through the second filter component.

9. The lower electrode device according to claim 1, characterized in that, The control voltage is equal to the sum of the self-bias voltage and the compensation voltage.

10. A semiconductor process control method, characterized in that, The semiconductor process control method, employing the lower electrode device as described in any one of claims 1-9, includes: The radio frequency source is controlled to apply radio frequency to the carrier component; The output voltage of the control power supply is set to the compensation voltage corresponding to the thickness of the focusing ring.

11. A semiconductor process apparatus, characterized in that, It includes a process chamber, a radio frequency source, and a lower electrode device as described in any one of claims 1-9, wherein the lower electrode device is configured to cooperate with the process chamber, and the radio frequency source is electrically connected to the carrier component.

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