Device for controlling trapped ions and method for manufacturing device

By designing mechanically connected ion trap modules, the mechanical stress and structural deformation problems caused by thermal mismatch during the expansion process of existing ion trap devices are solved, and a more stable and expandable ion trap structure is achieved.

CN119480608APending Publication Date: 2025-02-18INFINEON TECH AUSTRIA AG
View PDF 0 Cites 0 Cited by

Patent Information

Application Number
CN202411084351.5
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-08-09
Filing Date
2024-08-08
Publication Date
2025-02-18

AI Technical Summary

Technical Problem

During the expansion process, existing ion trap devices are prone to mechanical stress and structural deformation due to thermal mismatch, and it is difficult to effectively control the movement of captured ions.

Method used

A microfabrication device is designed, including two mechanically connected ion trap modules, each containing electrodes for capturing ions. The shuttle between the modules is achieved by an electrode design that is aligned with respect to each other.

Benefits of technology

This design reduces mechanical stress in the device, improves the stability and spreadability of the ion trap, so that the number of captured ions can be increased.

✦ Generated by Eureka AI based on patent content.

Smart Images

  • Figure CN119480608A_ABST
    Figure CN119480608A_ABST
Patent Text Reader

Abstract

A microfabricated device for controlling trapped ions includes: a first ion trap module including a first electrode configured to trap ions in a region above the first electrode; and a second ion trap module disposed laterally alongside the first ion trap module and including a second electrode configured to trap ions in a region above the second electrode. The first ion trap module and the second ion trap module are mechanically connected. The first electrode and the second electrode are aligned relative to each other so as to be configured to provide a shuttle of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode.
Need to check novelty before this filing date? Find Prior Art

Description

Technical Field

[0001] The present disclosure relates to devices for controlling trapped ions. Additionally, the present disclosure relates to methods for making devices for controlling trapped ions. Background Art

[0002] Trapped ions are one of the most promising candidates for use as qubits in quantum computers, since they can be trapped with long lifetimes in scalable arrays by means of electromagnetic fields. Ion traps can be made up of various layers, such as, for example, trapping layers, optical layers, electronic layers, etc. Ion traps are becoming larger and larger. As larger and larger structures are built from multiple thin layers, thermal mismatches between these layers may cause mechanical stresses on the layers and may even deform the ion traps formed by the layers. Manufacturers and developers of devices for controlling trapped ions are constantly working to improve their products. In particular, it would be desirable to provide ion trap devices with reduced mechanical stresses and suitable methods for making such devices. It would also be desirable to find ways to expand ion trap devices to become larger. Summary of the invention

[0003] One aspect of the present disclosure relates to a microfabricated device for controlling trapped ions. The device includes: a first ion trap module including a first electrode, the first electrode being configured to trap ions in a region above the first electrode; and a second ion trap module arranged laterally beside the first ion trap module and including a second electrode, the second electrode being configured to trap ions in a region above the second electrode. The first ion trap module and the second ion trap module are mechanically connected. The first electrode and the second electrode are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode.

[0004] Another aspect of the present disclosure relates to a method for assembling a device for controlling trapped ions. The method includes the following actions: providing a first ion trap module including a first electrode, the first electrode being configured to trap ions in a region above the first electrode. The method further includes the following actions: laterally arranging a second ion trap module including a second electrode next to the first ion trap module, the second electrode being configured to trap ions in a region above the second electrode. The method further includes the following actions: mechanically connecting the first ion trap module and the second ion trap module, wherein the first electrode and the second electrode are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] The device and method according to the present disclosure are described in more detail below based on the accompanying drawings. The elements of the accompanying drawings are not necessarily drawn to scale relative to each other. Similar reference numerals may designate corresponding similar parts. The technical features of the various illustrated examples may be combined unless they are mutually exclusive, and / or if not described as necessarily required, the technical features of the various illustrated examples may be selectively omitted.

[0006] Figure 1 includes Figure 1A and 1B , schematically illustrates a side view and a top view of a device 100 for controlling trapped ions according to the present disclosure.

[0007] Figure 2 A side view of a device 200 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0008] Figure 3 A side view of a device 300 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0009] Figure 4 includes Figure 4A and 4B , schematically illustrates top views of devices 400A and 400B for controlling trapped ions according to the present disclosure.

[0010] Figure 5 A side view of a device 500 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0011] Figure 6 A side view of a device 600 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0012] Figure 7 A side view of a device 700 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0013] Figure 8 A side view of a device 800 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0014] Fig. 9 A top view of a device 900 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0015] Fig.10 A side view of a device 1000 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0016] Fig.11 A side view of a device 1100 for controlling trapped ions according to the present disclosure is schematically illustrated.

[0017] Figure 12 includes Figures 12A to 12D , schematically illustrates a side view and various cross-sectional top views of a device 1200 for controlling trapped ions according to the present disclosure.

[0018] Fig.13 A flow chart of a method for assembling a device for controlling trapped ions according to the present disclosure is illustrated. DETAILED DESCRIPTION

[0019] Below, a microfabricated device for controlling trapped ions is described. For example, this device can be used for quantum computing. Trapped ions are one of the most promising candidates for being used as quantum bits in quantum computers, because they can be trapped with long lifetimes in scalable arrays by means of electromagnetic fields. However, the ion trap device as described herein is not limited to the application of quantum computing. The ion trap device can also be used in other applications (such as, for example, atomic clocks). The ion trap device can be implemented as an ion trap chip in the form of a small microfabricated device, which is configured to capture and manipulate individual ions in a controlled manner. It should be noted that the following description is not limited to ions, but can also be applied to atoms, molecules or other quantum particles / systems (e.g., electrons or defect centers).

[0020] The microfabricated device 100 for controlling trapped ions of FIG. 1 is illustrated in a general manner to qualitatively illustrate aspects of the present disclosure. The device 100 may be extended by any of the aspects described in conjunction with the other examples. For example, the microfabricated device 100 described later Fig.11 12 illustrate a more detailed version of a device for controlling trapped ions according to the present disclosure.

[0021] The device 100 may include an ion trap module 2 and a first module 4A. The ion trap module 2 may include a first mounting area 6A on its bottom surface, wherein the first module 4A may be mounted on the first mounting area 6A. The ion trap module 2 and the first module 4A may be electrically and / or optically coupled via the first mounting area 6A. Throughout this description, the terms "module", "tile", and "chiplet" may be used interchangeably. Information related to the specific functions of the modules of the device 100 is provided in more detail below. Similarly, information related to specific examples of electrical and optical interconnections between the modules of the device 100 is provided below.

[0022] The ion trap module 2 may further include a second mounting area 6B, and the device 100 may further include a second module 4B, wherein the second module 4B may be mounted on the second mounting area 6B of the ion trap module 2. The ion trap module 2 and the second module 4B may be electrically and / or optically coupled via the second mounting area 6B. In the illustrated example, the first module 4A and the second module 4B may be mounted on the same side of the ion trap module 2.

[0023] The ion trap module 2 may further include a third mounting area 6C, and the device 100 may further include a third module 4C, wherein the third module 4C may be mounted on the third mounting area 6C of the ion trap module 2. The ion trap module 2 and the third module 4C may be electrically and / or optically coupled via the third mounting area 6C.

[0024] The ion trap module 2 may further include a fourth mounting area 6D, and the device 100 may further include a fourth module 4D, wherein the fourth module 4D may be mounted on the fourth mounting area 6D of the ion trap module 2. The ion trap module 2 and the fourth module 4D may be electrically and / or optically coupled via the fourth mounting area 6D.

[0025] If available from Figure 1B As can be seen in the top view of , the device 100 may include additional modules arranged on the bottom surface of the ion trap module 2. However, hereinafter, for simplicity, only reference is made to the installed modules 4A to 4D. Each of the mounting areas 6A to 6D may correspond to an area of ​​the bottom surface of the ion trap module 2. In the illustrated example, the installed modules 4A to 4D and the corresponding mounting areas 6A to 6D may be square. In further examples, the shapes of the modules 4A to 4D and the mounting areas 6A to 6D may be selected in different ways.

[0026] The ion trap module 2 and modules 4A to 4D of the device 100 can be separated from each other, that is, they can correspond to separate components of the device 100. For example, the modules can be manufactured separately from each other, and the separately manufactured modules can be assembled later to form the assembled device 100. When viewed in a direction perpendicular to the first mounting area 6A, that is, when viewed in the z direction, the area (or floor space) of the ion trap module 2 can be larger than the area (or floor space) of the first module 4A. The same can be true for the other installed modules 4B to 4D. Accordingly, the ion trap 2 can also be referred to as a large module, and the installed modules 4A to 4D can be referred to as small modules.

[0027] The ion trap module 2 can be configured to trap ions. In this regard, the ion trap module 2 can include: a plurality of electrodes (not shown) configured to trap and shuttle (or transport) ions in a region above the electrodes. In the illustrated example, the electrodes can, for example, be arranged on a top surface of the ion trap module 2. The ions can be shuttled in a region above the electrodes in one or more lateral directions (e.g., in an xy plane) by means of AC and DC voltages, which can be separately coupled to specific electrodes in the plurality of electrodes. For example, the ion trap module 2 can include a combination of Fig.11 and 12 and some or all of the features of the ion trap module described in more detail. In particular, in combination Fig. 12BThe exemplary arrangement of the DC and RF electrodes of the ion trap module is shown and described. Compared to the ion trap module 2, the other modules 4A to 4D of the device 100 are not limited to specific module types. Of course, in one example, one or more of these other modules can also correspond to the ion trap module. In a further example, one or more of the other modules can correspond to one or more of the module types specified below.

[0028] The DC control module can be configured to control the DC signal provided to the DC electrodes of the ion trap module. In particular, the DC electrodes can be configured for electrostatic field capture and / or for moving ions within the ion trap module. In a non-limiting example, the DC control module can include at least one of a switch matrix, a multiplexer, a digital-to-analog converter, and the like. The use of the DC control module in a device for controlling trapped ions is shown and described in conjunction with FIG. 12.

[0029] A radio frequency (RF) control module can be configured to control the RF signals provided to the RF electrodes of the ion trap module. In particular, the RF electrodes can be configured for RF capture. For example, the RF control module can be configured to distribute the RF signals, and in this regard can also be referred to as an RF redistribution module. Alternatively or additionally, the RF control module can be configured to control at least one of the amplitude or phase of the RF signal. In this regard, the same "global" frequency can be used for the RF signal during operation of the device 100. The use of the RF control module in a device for controlling trapped ions is shown and described in conjunction with Figure 12.

[0030] The optical module can be configured to perform one or more of the operations in conjunction with light as described below. In this regard, the light can correspond to laser light that can be provided in the form of one or more laser beams. For example, the optical module can be configured to generate or amplify light. In a further example, the optical module can be configured to direct light from a light source external to the device to the ion trap module. In a further example, the optical module can be configured to split and distribute light in multiple locations in the device 100. In another example, the optical module can be configured to perform at least one light manipulation process. In a further example, the optical module can be configured to perform at least one light detection process. In yet another example, the optical module can be configured to couple light from the device 100 out to a component external to the device. In conjunction with Fig.11 12 and 13 illustrate and describe the use of an optical module in a device for controlling trapped ions.

[0031] The microwave module may be configured to provide and distribute microwave radiation in a plurality of locations of the device 100. For example, the microwave radiation may be used to perform the operation of a microwave-based quantum gate.

[0032] The connector module can be configured as multiple modules of the mechanical connection device 100. Figure 4A Rather, exemplary uses of connector modules are shown and described. For example, a cooling module can be configured to connect one or more of the modules to a cryostat. In yet another example, a module can correspond to a thermal anchoring module.

[0033] Further module types may combine, at least in part, the functionality of previously described module types. For example, in some examples, the control electronics for the DC electrodes and for the active optical devices may be similar. Thus, further module types may combine (or mix) in a single module features that may typically be provided by a DC module and a separate optical module.

[0034] The modules of device 100 may provide different (particularly, completely) functionalities required for the operation of device 100. For example, ion trap module 2 and first module 4A or first module 4A and second module 4B may provide different functionalities for the operation of device 100. In other words, each module of device 100 may provide a well-defined subset of functionalities that may be different from a well-defined subset of functionalities of another module. Each module may be configured to be combined with other modules of device 100 so as to provide the overall functionality of device 100 for controlling trapped ions. In this regard, device 100 may therefore be referred to as a modularly assembled device 100.

[0035] In a non-limiting illustrative example of different functions, the first module 4A may be a DC control module for controlling a DC signal, while the ion trap module 2 may be configured to trap ions. All operations for controlling the DC signal are performed exclusively in the DC control module, while the ion trap module may only receive the DC signal but may not control these signals at all. That is, a well-defined subset of the functions for controlling the DC signal may be located entirely in the DC control module.

[0036] The modules of the device 100 may be electrically coupled to each other. In this regard, the electrical connections between the modules are not limited to a specific type and may be based on one or more of the following techniques. Figures 7 to 10The specific examples of electrical connection between modules are shown and described. In one example, the electrical connection between modules can be provided by one or more solder bumps (e.g., reflow soldering). Here, the spacing between two (directly) adjacent solder balls can be greater than about 200 μm to about 300 μm. The solder bump can be configured to at least partially absorb the mechanical stress that can occur in the device 100. In a further example, the electrical connection between modules can be provided by one or more copper pillar bumps. The copper pillar bump can include a copper pillar and a solder cap arranged thereon. Here, the spacing between two (directly) adjacent copper pillar bumps can be less than about 200 μm. In another example, the modules can be electrically connected based on hybrid bonding or direct bonding interconnection (DBI). Hybrid bonding can be designated as permanent bonding, which can combine dielectric bonding (e.g., SiOx) with embedded metal (e.g., Cu) to form an interconnection. In a further example, the electrical connection between modules can be based on anisotropic conductive adhesives. In yet another example, one or more wire bonds can be used to electrically interconnect the modules.

[0037] The modules of the device 100 may be optically coupled to each other. In this regard, the optical connection between the modules is not limited to a specific type, but may be based on one or more of the following techniques. Fig.11 Specific examples of optical connections between modules are shown and described in detail in FIG. 1 and 12. In one example, the modules can be optically coupled via one or more waveguides. In a further example, the optical connections between modules can be based on one or more free space (light) beams. In yet another example, the modules can be optically interconnected by means of photonic wire bonding and / or optical fibers.

[0038] The modules of device 100 may be mechanically coupled to each other. In this regard, the mechanical connection between the modules is not limited to a specific type. Fig.11 Specific examples of mechanical connections between modules are mentioned in and 12. For example, a mechanical connection between two modules may be provided, or may be based on at least one of gluing (e.g., adhesive), bonding (e.g., anodic, eutectic, melting, thermal pressure), welding, etc. The production of the mechanical connection may use alignment marks and / or guide structures.

[0039] The modules of device 100 can be made on the basis of any suitable material. For example, the modules of device 100 can be made of at least one of silicon, fused quartz, sapphire, diamond, silicon carbide and glass. In particular, the modules of device 100 can be made of different materials. For example, ion trap module 2 and first module 4A can be made of materials that are at least partially different. Due to the different manufacturing materials, the thermal expansion coefficient of ion trap module 2 can be different from the thermal expansion coefficient of first module 4A.

[0040] If available from Figure 1A and 1BAs can be seen in , ion trap module 2 can be larger than the other modules 4A to 4D of device 100. The coefficient of thermal expansion of ion trap module 2 can impose thermal expansion over a larger distance. The physical dimensions of the smaller modules 4A to 4D can be selected so that the mismatch in the coefficient of thermal expansion of the modules does not place too much mechanical stress on ion trap module 2. In this way, warping of ion trap module 2 can be avoided or at least reduced. When the footprint of modules 4A to 4D is selected to be smaller than the footprint of ion trap module 2, mechanical stress between modules of device 100 can be reduced.

[0041] Figure 2 A microfabricated device 200 for controlling trapped ions may include some or all of the features of the device 100 of FIG. 1 . Similar to FIG. 1 , the device 200 may include an ion trap module 2 and a first layer of modules 4A to 4D arranged above a mounting area on a bottom surface of the ion trap module 2. Compared to FIG. 1 , the device 200 may include an additional second layer of modules 4E to 4L mountable on the bottom surface of the first layer of modules 4A to 4D. Figure 2 In the exemplary side view of FIG. 4 , two second layer modules can be mounted on the bottom surface of each first layer module. However, it should be understood that the actual number of second layer modules mounted on the first layer modules 4A to 4D may be different depending on the situation under consideration. When viewed in the z direction, the area (or footprint) of one of the first layer modules 4A to 4D may be greater than the area (or footprint) of one of the second layer modules 4E to 4L.

[0042] Figure 3 The microfabricated device 300 for controlling trapped ions can include some or all of the features of the previously described devices. Similar to Figure 1, the device 300 can include an ion trap module 2 and a first layer of four modules 4A to 4D installed above a mounting area on the bottom surface of the ion trap module 2. Compared to Figure 1, the device 300 can include an additional second layer of modules 4M to 4P that can be installed above a mounting area on the upper surface of the ion trap module 2. That is, the first and second layer modules can be installed on opposite sides of the ion trap module 2.

[0043] Figure 4AThe microfabricated device 400A for controlling trapped ions may include some or all of the features of the previously described device. The device 400A may include at least two ion trap modules arranged laterally next to each other. In the illustrated example, the device 400A may include an exemplary number of four ion trap modules 2A to 2D, wherein a plurality of smaller modules 4 may be mounted on the mounting area of ​​the ion trap modules 2A to 2D. For example, each of the ion trap modules 2A to 2D may be similar to the ion trap module 2 of Figure 1. The device 400A may further include: one or more connector modules 8A to 8D, configured to mechanically connect the ion trap modules 2A to 2D and / or to stabilize the mechanical connection between the ion trap modules 2A to 2D. In particular, the connector modules may provide a mechanical connection between directly adjacent ion trap modules. In the illustrated case, the device 400A may include an exemplary number of four connector modules 8A to 8D.

[0044] The first ion trap module 2A may include: a first electrode (not shown) configured to capture ions in a region above the first electrode. For example, the first electrode may be arranged on a surface of the first ion trap module 2A opposite to a surface on which modules 4A to 4D may be mounted. That is, the first electrode may be arranged on a top surface of the first ion trap module 2A, while modules 4A to 4D may be mounted on a bottom surface of the first ion trap module 2A. Ions may be shuttled in a region above the electrode (i.e., above the top surface of the first ion trap module 2A) in one or more lateral directions (e.g., in the xy plane) by means of AC and DC voltages, which may be separately coupled to specific electrodes among the plurality of electrodes. In one example, the first electrode of the first ion trap module 2A may be or may include a DC electrode. In a further example, the first electrode of the first ion trap module 2A may be or may include an RF electrode and a DC electrode. Note that in combination with Fig. 12B Instead, a more detailed exemplary arrangement of DC electrodes and RF electrodes of an ion trap module is shown and described.

[0045] Similar to the first ion trap module 2A, the second ion trap module 2B arranged laterally beside the first ion trap module 2A may include: a second electrode (not shown) configured to capture and shuttle ions in the region above the second electrode. The above comments on the first electrode of the first ion trap module 2A may also be true for the second electrode of the second ion trap module 2B. The first electrode of the first ion trap module 2A and the second electrode of the second ion trap module 2B may be aligned relative to each other so as to be configured to provide ions to shuttle between the first ion trap module 2A and the second ion trap module 2B along the first electrode and the second electrode. By appropriately applying AC and / or DC voltages to the electrodes of the ion trap modules 2A and 2B, ions can be shuttled from the first ion trap module 2A to the second ion trap module 2B and / or vice versa. In this context, the first electrode of the first ion trap module 2A and the second electrode of the second ion trap module 2B may be particularly arranged in a common plane. In the illustrated example, the first electrode and the second electrode may, for example, be arranged at the same height relative to the z coordinate in the xy plane.

[0046] It should be understood that further ion trap modules 2C and 2D of device 400A may also include electrodes configured to capture and shuttle ions in the region above the corresponding electrodes. The electrodes of the ion trap modules may be aligned relative to the electrodes of the adjacent ion trap modules so that the shuttle of ions along their electrodes between adjacent ion trap modules may be provided. In the illustrated example, the transmission of ions between all four ion trap modules 2A to 2D may be provided. Ions may be shuttled between any positions in the region above the electrodes of the ion trap modules 2A to 2D.

[0047] It should be further understood that the device 400A may include Figure 4A Any number of individual ion trap modules mechanically connected and assembled as shown in the example of . In this way, multiple individual ion trap modules can be modularly assembled to form a large-scale ion trap module with a desired size. Therefore, the ion trap device according to the present disclosure can support the direct and easy expansion of the ion trap device to a larger size, so that the number of trapped ions can be increased. Additional modules 4A to 4D that provide one or more of the various functions as described above can be installed on the top surface and / or bottom surface of one or more of the ion trap modules 2A to 2D.

[0048] Figure 4B The microfabricated device 400B for controlling trapped ions may include some or all of the features of the previously described devices. In particular, Figure 4B The device 400B may be at least partially similar to Figure 4A The device 400A of FIG. 400A makes the above comments about the device 400A also valid for the device 400A. Figure 4A , device 400B may not necessarily require such as incorporation Figure 4A Instead of the connector module shown and described. Alternatively or additionally, a mechanical connection between adjacent ion trap modules can be provided in the manner of jigsaw puzzle pieces. For example, a first ion trap module can include one or more recesses arranged at the periphery of the first ion trap module. In addition, an adjacent second ion trap module can include one or more protrusions arranged at the periphery of the second ion trap module. The first and second ion trap modules can then be mechanically connected (or interlocked) by inserting the (one or more) protrusions of the second ion trap module into the (one or more) recesses of the first ion trap module. Based on this interlocking scheme, any number of ion trap modules can be mechanically interconnected in two or three spatial dimensions without the need for a connector module or similar connecting device. Figure 4B In the example of , each of the ion trap modules 2A to 2D may illustratively include a recess and a protrusion, wherein the protrusion of the ion trap module is qualitatively indicated by a dashed line. The protrusion of each ion trap module may be inserted into the recess of an adjacent ion trap module, thereby providing a mechanical connection between these adjacent ion trap modules. It should be understood that in further examples, the number of recesses and protrusions may be selected in different ways. Similar to Figure 4A For example, electrodes of individual ion trap modules 2A to 2D may be aligned relative to each other so that shuttling of ions between ion trap modules 2A to 2D along the electrodes of ion trap modules 2A to 2D may be provided.

[0049] Figure 5 The microfabricated device 500 for controlling trapped ions can include some or all of the features of the previously described devices. The device 500 can include two ion trap modules 2A and 2B and a plurality of smaller modules 4A to 4D arranged therebetween. In one example, the device 500 can correspond to the device 100 of FIG. 1 , with an additional ion trap module 2B mounted on the bottom surface of the small modules 4A to 4D. In particular, the two ion trap modules 2A and 2B can have similar thermal expansion coefficients to reduce mechanical stress between the modules of the device 500.

[0050] Figure 6The microfabricated device 600 for controlling trapped ions may include some or all of the features of the previously described devices. The device 600 may include: a first module layer, including two ion trap modules 2A and 2B; and a second module layer, including a plurality of small modules 4A to 4H that can be installed above the mounting area on the bottom surface of the ion trap modules 2A and 2B. The device 600 may further include: a third module layer, including two modules 10A and 10B and an ion trap module 2C arranged therebetween. Each of the modules 10A and 10B may have an area (or footprint) that may be larger than the footprint of the small modules 4A to 4H and may be smaller than the footprint of the ion trap modules 2A to 2C. Compared to the previous example, the device 600 may include a plurality of ion trap modules arranged in the same layer. In particular, the ion trap modules 2A to 2C and the modules 10A and 10B may have similar thermal expansion coefficients.

[0051] Figure 7 Details of a microfabricated device 700 for controlling trapped ions are illustrated and may include some or all of the features of the previously described devices. Figure 7 An example of RF connection between modules of device 700 is intended to be illustrated. Device 700 may include, among other things, a first module 4A and a second module 4B. Each of modules 4A and 4B may include: one or more RF traces 12A and 12B, which may be arranged on the upper surface of the respective module. The lateral (or horizontal) RF connection between modules 4A and 4B may be provided by one or more RF bridges 14 that may extend over a gap 16 between modules 4A and 4B. The RF bridge 14 may be electrically connected to each of the RF traces 12A and 12B of modules 4A and 4B. In particular, the RF connection provided by the RF bridge 14 may provide an extremely low ohmic connection.

[0052] Figure 8 The microfabricated device 800 for controlling trapped ions may include some or all of the features of the previously described devices. Figure 8 An example of a DC connection between modules of the illustrated device 800 is intended. For example, the device 800 may be at least partially similar to the device 100 of Figure 1. The device 800 may include an ion trap module 2 having a plurality of small modules 4A to 4D mounted thereon. Each of the small modules 4A to 4D may include: an electrical contact 18, which may be electrically connected to an electrical contact 20 of the ion trap module 2. The ion trap module 2 may include: one or more DC connection lines 22, which may be electrically coupled to the electrical contact 20 of the ion trap module 2, and may thus be configured to provide a lateral electrical DC connection between two or more of the small modules 4A to 4D.

[0053] Fig. 9The microfabricated device 900 for controlling trapped ions may include some or all of the features of the previously described devices. Fig. 9 An example of electrical connection between modules of the device 900 is intended to be illustrated. In the illustrated case, the device 900 may include an exemplary number of eight small modules 4A to 4H that can be mounted on a large module. The device according to the present disclosure may be operated in a cryogenic environment. In this regard, the device 900 may be configured to be mechanically and thermally coupled to a cryostat head (not shown), wherein a socket (not shown) may be used to mount the device 900 to the cryostat head. Each of the modules 4A to 4H may be configured to be electrically connected to a socket (or alternatively, to a flexible printed circuit board) via one or more electrical connections 26. In the illustrated example, the electrical connection 26 may extend in the z direction. The socket (or alternatively, the flexible printed circuit board) may include: a plurality of electrical connections 28, which may provide electrical coupling between the electrical connections 26. In the illustrated example, the electrical connection 28 may extend in the xy plane. Thus, the electrical connection between the small modules 4A to 4H may be provided by means of electrical connections 26 and 28.

[0054] Fig.10 The microfabricated device 1000 for controlling trapped ions may include some or all of the features of the previously described devices. Fig.10 In the illustrated side view, the device 1000 may include an ion trap module 2 and an exemplary number of four small modules 4A to 4D mounted thereon. In addition, the device 1000 may include a flexible printed circuit board 24 arranged above the bottom surface of the small modules 4A to 4D. In the illustrated example, the electrical contacts 18 of the two small modules 4B and 4D may be electrically connected to the flexible printed circuit board 24. The electrical connection between the modules 4B and 4D may then be provided via one or more connecting wires of the flexible printed circuit board 24. In one example, the flexible printed circuit board 24 may be configured to feed signals in one or more electronic modules (e.g., a DC control module). In a further example, the flexible printed circuit board 24 may be configured to provide an electrical connection between a DC redistribution module and individual DC modules.

[0055] Fig.11The microfabricated device 1100 for controlling trapped ions can be viewed as a more detailed version of the previously described device. The device 1100 may include an ion trap module 30 and an exemplary number of two optical modules 32A and 32B arranged above the upper surface of the ion trap module 30. The device 1100 may include one or more additional modules that are not shown for simplicity. For example, such additional modules may be arranged in the space between the optical modules 32A and 32B. The number and type of additional modules may depend on the specific design and function of the device 1100. Note that the example of FIG. 12 described later illustrates a device that includes an additional module type.

[0056] The ion trap module 30 may include a first substrate 34A and a second substrate 34B spaced apart from the first substrate 34A. Each of the substrates 34A and 34B may include a dielectric material or a semiconductor material, or may be made of a dielectric material or a semiconductor material. For example, each of the substrates 34A and 34B may include at least one of sapphire, fused silica, quartz, silicon, etc., or may be made of at least one of sapphire, fused silica, quartz, silicon, etc. The ion trap module 30 may correspond to the ion trap module 2 described in the aforementioned example. For example, Figure 4A and 4B The ion trap modules 2A to 2D may be Fig.11 That is, a plurality of ion trap modules 30 may be assembled to form a combined ion trap module 30. Figure 4A and 4B A large-scale ion trap device is shown and described by way of example.

[0057] One or more spacer elements 36 may be arranged between substrates 34A and 34B. Spacer elements 36 may be configured to define a distance between substrates 34A and 34B. For example, spacer elements 36 may be bonded to substrates 34A and 34B based on wafer bonding technology. In this regard, at least one of glass bonding, eutectic bonding, anodic bonding, or thermal pressure bonding may be applied. The material of spacer elements 36 may be selected accordingly.

[0058] Substrates 34A and 34B and spacer elements 36 can be arranged in a manner that one or more cavities 38A and 38B can be formed in the ion trap module 30. In the illustrated case, an exemplary number of two cavities 38A and 38B can be formed. In further examples, the number of cavities can be different. In each of the cavities 38A and 38B, a structured electrode layer 40 can be arranged on the bottom surface of the first substrate 34A, and further structured electrode layers 40 can be arranged on the upper surface of the second substrate 34B. Each of the structured electrode layers 40 can form an electrode that is configured to capture one or more ions 42 in the cavities 38A and 38B between the corresponding structured electrode layers 40. In the illustrated example, only a single ion 42 is shown for simplicity.

[0059] The position of ions 42 can be controlled by means of a voltage that can be applied to the structured electrode layer 40. For example, ions 42 can be moved in one or more lateral directions (e.g., in the xy plane) in the corresponding cavity by means of AC and DC voltages, which can be separately coupled to specific electrodes of the structured electrode layer 40. For example, the structured electrode layer 40 can include RF electrodes for RF capture and DC electrodes for electrostatic field capture. The ion trap as described herein can be configured to capture multiple ions 42 that can be individually addressable and movable by appropriately controlling the potential of the electrodes of the ion trap. In the illustrated example, the ion trap module 30 can be based on a three-dimensional ion trap geometry, in which the structured electrode layer 40 can be arranged on top of each other relative to the z direction. However, it should be understood that the concept described herein is not limited to a three-dimensional ion trap geometry. In a further example, the ion trap module can correspond to or can include a surface ion trap (or a surface electrode ion trap). In a surface ion trap, all electrodes (i.e., DC electrodes and / or RF electrodes) can be arranged in the same single plane. Ions can be stored and shuttled across this single plane.

[0060] One or more or even all of the modules included in the device according to the present disclosure may be manufactured at least in part based on microfabrication technology. In one example, each of the structured electrode layers 40 may be formed based on microfabrication technology. Microfabrication technology (e.g., for electrode formation and structuring) may include one or more of a photolithography process (such as, for example, photoresist coating, patterning, etching), a deposition process (such as, for example, CVD, PVD, sputtering), an electroplating process (such as, for example, electroless plating, water plating), an etching process, etc. The electrodes formed in the structured electrode layer 40 may be structured with micron or submicron precision and alignment accuracy, thereby allowing complex electrode layouts without losing the controllability of the trapped ions 42.

[0061] The first optical module 32A can be mounted on the mounting area of ​​the ion trap module 30. In the illustrated example, the mounting area can be arranged on the upper surface of the ion trap module 30. The mechanical connection between the modules 30 and 32A can be provided, for example, by an adhesive material or glue 44. In the illustrated case, the first optical module 32A can have an exemplary shape of a rectangular block. For example, the first optical module 32A can include fused quartz and / or glass, or can be made of fused quartz and / or glass.

[0062] Lasers may be used for trapped ion quantum computing. In this regard, ions 42 may need to be exposed to laser light, which must be made available in cavities 38A and 38B. The specific characteristics of the laser light (such as, for example, frequency, intensity, polarization, phase, etc.) may depend on the type of operation to be performed with the laser light with respect to trapped ions 42, such as cooling, gate operation, etc.

[0063] First optical module 32A can be configured to direct light from a light source (not shown) external to the device to ion trap module 30, or more particularly to left cavity 38A of ion trap module 30. For this purpose, device 1100 can include: one or more waveguides 46A and 46B, which can extend at least partially through first optical module 32A and ion trap module 30, such as Fig.11 . Waveguides 46A and 46B may be configured to optically couple ion trap module 30 and first optical module 32A via an intermediate mounting region. In the illustrated example, waveguides 46A and 46B may be arranged so that laser light can approach ions 42 in cavity 38A from a plurality of different directions.

[0064] The second optical module 32B may include some or all of the features of the first optical module 32A as described above. The second optical module 32B may include a recess 48 formed in its bottom surface so that a cavity may be formed between the first substrate 34A and the second optical module 32B. The second optical module 32B may be configured to direct light from a light source (not shown) outside the device to the ion trap module 30, or more particularly to the right cavity 38B of the ion trap module 30. For this purpose, a waveguide 46C may extend through the second optical module 32B. Laser light may propagate through the waveguide 46C and may enter the cavity formed by the recess 48 in the form of one or more free space beams (or free space laser beams) 50. The (collimated) free space beam 50 may then be successively reflected at mirrors 52A and 52B so that the laser light may be focused at the location of the ions 42. In the non-limiting illustrated example, the first mirror 52A may be planar and the second mirror 52B may be curved. The second optical module 32B and the ion trap module 30 may be optically coupled via the intermediate mounting region by means of a free space beam 50 .

[0065] Figure 12 includes Figures 12A to 12D , schematically illustrates a side view and various cross-sectional top views of a microfabricated device 1200 for controlling trapped ions in accordance with the present disclosure. Figures 12B to 12D The cross-sectional top view is intended to illustrate the basic design possibilities that can be implemented in a device according to the present disclosure. In this regard, it should be noted that a device according to the present disclosure does not necessarily need to have a device that can provide such Figures 12B to 12D The specific section plane of the cross-sectional top view shown in the example. Figures 12B to 12D A top view of a cross section may be obtained by passing through Fig. 12A In other words, the top view of the cross section can show the Fig. 12A In addition, the top view of the cross section may show components that are not necessarily arranged at different levels. Fig. 12A The components are shown in a side view.

[0066] The device 1200 for controlling trapped ions of FIG. 12 may be viewed as a more detailed version of the previously described device. The device 1200 may include Fig.11 Device 1200 may include some or all of the features of device 1100. Device 1200 may include an ion trap module 30 and an optical module 32 mounted above a mounting area on an upper surface of the ion trap module 30. In addition, device 1200 may include an RF control module 54 and a DC control module 56 that may also be mounted above respective mounting areas on an upper surface of the ion trap module 30. The ion trap module 30 may correspond to the ion trap module 2 described in the previous examples. For example, Figure 4A and 4B The ion trap modules 2A to 2D of FIG. 12 may be implemented in the form of the ion trap module 30 of FIG. 12. That is, a plurality of ion trap modules 30 may be assembled to form a combination of Figure 4A and 4B A large-scale ion trap device is shown and described by way of example.

[0067] Optical fiber 58 may provide an optical connection between a light source (not shown) external to the device and optical module 32. Light received via optical fiber 58 may propagate at least partially through the material of optical module 32 and may exit the material as a free-space beam 50. After being reflected at mirrors 52A and 52B, the light may reach ions 42 trapped between structured electrode layers 40 so that desired operations (cooling, gating, etc.) may be applied to ions 42.

[0068] The RF control module 54 may be electrically coupled to the ion trap module 30 via a corresponding mounting region. In the illustrated example, the mounting region may be located between the bottom surface of the RF control module 54 and the upper surface of the first substrate 34A. More specifically, the RF control module 54 may be electrically connected to RF electrodes formed in the structured electrode layer 40 arranged on the bottom surface of the first substrate 34A and / or the upper surface of the second substrate 34B, respectively.

[0069] In a similar manner, the DC control module 56 can be electrically coupled to the ion trap module 30 via the corresponding mounting area. More specifically, the DC control module 56 can be electrically connected to the DC electrode formed in the opposing structured electrode layer 40. Fig. 12A In the side view of FIG. 5 , the RF electrodes and the DC electrodes may be arranged alternately. The DC control module 56 may be connected to another component (such as, for example, a flexible printed circuit board, not shown) via an electrical connection 60 .

[0070] The DC control module 56 can be configured to control the DC signal provided to the DC electrode, and the RF control module 54 can be configured to control the RF signal provided to the RF electrode. The DC signal and the RF signal can change the potential of the DC electrode and the RF electrode in such a way that the position of the ions 42 can be controlled as desired.

[0071] Fig. 12B A cross-sectional top view of device 1200 is illustrated. Fig. 12B It is intended to illustrate the location of the optical and electrical components of device 1200. In particular, Fig. 12B An exemplary arrangement of RF electrodes 62 and DC electrodes 64 that can be formed in a structured electrode layer and an exemplary arrangement of mirrors 66 for reflecting light are shown. It should be noted that the components shown do not necessarily have to be arranged in the same plane. The RF electrode 62 can have an elongated shape, while the DC electrode 64 can have the shape of a small square. The RF electrode 62 and the DC electrode 64 can form a main junction 68, at which one or more ions can be trapped. An exemplary number of eight mirrors 66 are indicated by the larger square.

[0072] exist Fig. 12B In the illustrated example of FIG. 1 , ions can be shuttled along electrodes 62, 64 of the ion trap module 30 of the device 1200 in the x-direction and in the y-direction. Figure 4A and 4B For example, ion trap modules 2A to 2D may include Fig. 12B Similar electrodes 62, 64. As discussed previously, such electrodes 62, 64 of ion trap modules 2A to 2D can then be aligned so that ions can be transferred between ion trap modules 2A to 2D. For example, Figure 4AThe RF electrodes 62 of the first ion trap module 2A and the second ion trap module 2B may be connected to Fig. 12B The DC electrodes 64 of the two ion trap modules 2A and 2B may be arranged on both sides of the respective RF electrodes 62. In a similar manner, Figure 4A The RF electrodes 62 of the first ion trap module 2A and the third ion trap module 2C may be connected to Fig. 12B The modules 2A and 2C extend similarly in the y-direction and may be arranged at substantially the same x-coordinate so that ions may be shuttled between the first ion trap module 2A and the third ion trap module 2C in the y-direction.

[0073] Fig. 12C A cross-sectional top view of device 1200 is illustrated. Fig. 12C It is intended to illustrate exemplary electrical routing of signals between different planes and between different locations within a plane. DC signals can be transmitted between different planes through vias 70 indicated by small circles. In a similar manner, RF signals can be transmitted between different planes through vias 72 indicated by larger circles. DC signals can be transmitted in the same plane by means of DC connecting lines 74. Each of the DC connecting lines 74 can electrically couple two or more of the vias 70.

[0074] Fig.12D A cross-sectional top view of device 1200 is illustrated. Fig.12D It is intended to illustrate the positions of the various modules of the device 1200. As can be seen, the device 1200 may include an optical module 32, an RF control module 54, and two DC control modules 56A and 56B. The ion trap module 30 of the device 1200 may be arranged below these modules. Fig.12D Further instructions as previously incorporated Fig. 12C And discuss the electrical connections.

[0075] Fig.13 A flow chart of a method for assembling a device for controlling trapped ions according to the present disclosure is illustrated. The method may be used to make the previously described device and may thus be read in conjunction with the previous figures. For example, the method may be used to make Figure 4A and 4B Devices 400A and 400B. Described in a general manner Fig.13 The method is described in order to qualitatively illustrate aspects of the present disclosure. It should be understood that the method can be extended by any of the aspects described in combination with other examples according to the present disclosure.

[0076] At 76, a first ion trap module can be provided including a first electrode, the first electrode being configured to trap ions in a region above the first electrode. At 78, a second ion trap module can be arranged laterally adjacent to the first ion trap module including a second electrode, the second electrode being configured to trap ions in a region above the second electrode. At 80, the first ion trap module and the second ion trap module can be mechanically coupled, wherein the first electrode and the second electrode can be aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode.

[0077] Fig.13 The method may include further actions. For example, the method may further include the following actions: testing at least one of the first ion trap module and the second ion trap module for defects. Similar actions can be applied to one or more other modules of the device to be assembled. In another action, the defective module can be discarded from the assembled device. In a further action, the module can be installed on the mounting area of ​​the first ion trap module. In another action, the first ion trap module and the module can be electrically and / or optically coupled via the first mounting area.

[0078] Referring back to the example of FIG. 1 , the ion trap module 2 can be manufactured based on a technology configured to produce such large modules in high yield. Small modules 4A to 4D can be made in low yield. Since the small modules 4A to 4D can be picked up and placed on the mounting areas 6A to 6D of the ion trap module 2, it may be possible to sort out defective small modules so that only properly working modules are installed on the ion trap module 2 to form an assembled device. In other words, it can be assumed that 100 percent of the small modules of the assembled device will work. Therefore, the scheme of using multiple small modules can particularly improve the assembly yield for a large assembled system.

[0079] Example Hereinafter, a device for controlling trapped ions and a method for manufacturing the device are described by way of example.

[0080] Example 1 is a microfabricated device for controlling trapped ions, the device comprising: a first ion trap module including a first electrode, the first electrode being configured to trap ions in a region above the first electrode; and a second ion trap module arranged laterally next to the first ion trap module and including a second electrode, the second electrode being configured to trap ions in a region above the second electrode, wherein the first ion trap module and the second ion trap module are mechanically connected, and wherein the first electrode and the second electrode are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode.

[0081] Example 2 is a device according to Example 1, further comprising: a first module mounted on a first mounting area of ​​the first ion trap module, wherein the first ion trap module and the first module are electrically and / or optically coupled via the first mounting area.

[0082] Example 3 is a device according to Example 2, wherein the first module is at least one of the following: a DC control module, configured to control a DC signal provided to a DC electrode of the ion trap module; an RF control module, configured to control an RF signal provided to an RF electrode of the ion trap module; an optical module, configured to perform at least one of the following: generating or amplifying light; directing light from a light source outside the device to the ion trap module, splitting and distributing light in multiple locations of the device, performing at least one light manipulation process, performing at least one light detection process, coupling light from the device out to components outside the device; and a microwave module, configured to provide and distribute microwave radiation in multiple locations of the device.

[0083] Example 4 is a device according to Example 2 or 3, wherein: the first ion trap module further includes a second mounting area, and the device further includes a second module, wherein the second module is mounted on the second mounting area of ​​the first ion trap module.

[0084] Example 5 is a device according to Example 4, wherein the first ion trap module and the second module are electrically and / or optically coupled via the second mounting area.

[0085] Example 6 is a device according to any one of Examples 2 to 5, wherein the first ion trap module and the first module are made of at least one of silicon, fused silica, sapphire, diamond, silicon carbide and glass.

[0086] Example 7 is a device according to any one of Examples 2 to 6, wherein the first ion trap module and the first module are made of different materials.

[0087] Example 8 is a device according to any of Examples 2 to 7, wherein a coefficient of thermal expansion of the first ion trap module is different from a coefficient of thermal expansion of the first module.

[0088] Example 9 is a device according to any one of Examples 2 to 8, wherein the first ion trap module and the first module are configured to provide completely different functions for the operation of the device.

[0089] Example 10 is a device according to Example 4, wherein the first module and the second module are mounted on a same side of the first ion trap module.

[0090] Example 11 is a device according to Example 4, wherein the first module and the second module are mounted on opposite sides of the first ion trap module.

[0091] Example 12 is a device according to any one of Examples 2 to 11, wherein: the first ion trap module and the first module are mechanically coupled by at least one of gluing and bonding, and / or the first ion trap module and the first module are electrically coupled by at least one of a solder bump, an anisotropic conductive adhesive and a wire bond, and / or the first ion trap module and the first module are optically coupled by at least one of a waveguide and a free space beam.

[0092] Example 13 is a device according to any of the preceding examples, wherein the first electrode and the second electrode are arranged in a common plane.

[0093] Example 14 is a device according to any of the preceding examples, wherein: the first electrode is a DC electrode and the second electrode is a DC electrode.

[0094] Example 15 is a device according to any one of Examples 1 to 13, wherein: the first electrode is an RF electrode and a DC electrode, and the second electrode is an RF electrode and a DC electrode.

[0095] Example 16 is a device according to any of the preceding examples, further comprising: at least one connector module configured to mechanically connect the first ion trap module and the second ion trap module.

[0096] Example 17 is a device according to any one of the preceding examples, wherein: the first ion trap module includes at least one protrusion arranged at the periphery of the first ion trap module, the second ion trap module includes at least one recess arranged at the periphery of the second ion trap module, and the first ion trap module and the second ion trap module are mechanically connected by inserting the at least one protrusion of the first ion trap module into the at least one recess of the second ion trap module.

[0097] Example 18 is a method for assembling a device for controlling trapped ions, the method comprising: providing a first ion trap module comprising a first electrode, the first electrode being configured to trap ions in a region above the first electrode; and arranging a second ion trap module comprising a second electrode laterally next to the first ion trap module, the second electrode being configured to trap ions in a region above the second electrode; and mechanically connecting the first ion trap module and the second ion trap module, wherein the first electrode and the second electrode are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module and the second ion trap module along the first electrode and the second electrode.

[0098] Example 19 is a method according to Example 18, further comprising: testing at least one of the first ion trap module and the second ion trap module for defects; and discarding defective modules from assembling the device.

[0099] Example 20 is a method according to Example 18 or 19, further comprising: mounting the first module on a first mounting area of ​​the first ion trap module; and electrically and / or optically coupling the first ion trap module and the first module via the first mounting area.

[0100] As used in this specification, the terms "electrically connected", "electrically coupled", "optically connected" or "optically coupled" or similar terms are not intended to mean that elements are directly connected together; intervening elements may be provided between the "electrically connected", "electrically coupled", "optically connected" or "optically coupled" elements, respectively. However, according to the present disclosure, the above-mentioned and similar terms may optionally also have the specific meaning that elements are directly connected together, that is, the specific meaning that no intervening elements are provided between the "electrically connected", "electrically coupled", "optically connected" or "optically coupled" elements, respectively.

[0101] Further, the words “above” or “below” with respect to a portion, element, or material layer formed, positioned, or arranged “above” or “below” a surface may be used herein to mean that the portion, element, or material layer should be “directly” positioned (e.g., placed, formed, arranged, deposited, etc.) “on” or “below” the implied surface, for example, in direct contact with the implied surface. However, the words “above” or “below” with respect to a portion, element, or material layer formed, positioned, or arranged “above” or “below” a surface may be used herein to mean that the portion, element, or material layer should be “indirectly” positioned (e.g., placed, formed, arranged, deposited, etc.) “on” or “below” the implied surface, with one or more additional portions, elements, or layers being arranged between the implied surface and the portion, element, or material layer.

[0102] Although specific examples have been illustrated and described herein, it will be appreciated by those skilled in the art that the specific examples shown and described may be replaced with a variety of alternative and / or equivalent implementations without departing from the scope of the invention. This application is intended to cover any adaptation or variation of the specific examples discussed herein. Therefore, it is intended that the present invention is limited only by the claims and their equivalents.

Claims

1. A microfabricated device for controlling trapped ions, the device comprising: A first ion trap module (2A) comprising a first electrode (62, 64), wherein the first electrode (62, 64) is configured to trap ions in a region above the first electrode (62, 64); as well as a second ion trap module (2B) arranged laterally beside the first ion trap module (2A) and comprising a second electrode (62, 64), the second electrode (62, 64) being configured to trap ions in a region above the second electrode (62, 64), wherein the first ion trap module (2A) and the second ion trap module (2B) are mechanically connected, and wherein the first electrode (62, 64) and the second electrode (62, 64) are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module (2A) and the second ion trap module (2B) along the first electrode (62, 64) and the second electrode (62, 64).

2. The device of claim 1, further comprising: A first module (4A) is installed on a first installation area (6A) of the first ion trap module (2A), The first ion trap module (2A) and the first module (4A) are electrically and / or optically coupled via the first mounting area (6A).

3. The device of claim 2, wherein the first module (4A) is at least one of: A DC control module (56) configured to control a DC signal provided to a DC electrode of the ion trap module (30); An RF control module (54) configured to control an RF signal provided to the RF electrode of the ion trap module (30); An optical module (32) configured to perform at least one of the following: to generate or amplify light; directing light from a light source outside the device to the ion trap module (30), splitting and distributing light in multiple locations of the device, performing at least one light manipulation process, performing at least one light detection process, A component for coupling light from the device out of the device; as well as A microwave module is configured to provide and distribute microwave radiation in a plurality of locations of the device.

4. A device as claimed in claim 2 or 3, wherein: The first ion trap module (2A) further comprises a second mounting area (6B), and The device further comprises a second module (4B), wherein the second module (4B) is mounted on a second mounting area (6B) of the first ion trap module (2A).

5. The device of claim 4, wherein the first ion trap module (2A) and the second module (4B) are electrically and / or optically coupled via the second mounting area (6B).

6. The device according to any one of claims 2 to 5, wherein the first ion trap module (2A) and the first module (4A) are made of at least one of silicon, fused silica, sapphire, diamond, silicon carbide and glass.

7. The device according to any one of claims 2 to 6, wherein the first ion trap module (2A) and the first module (4A) are made of different materials.

8. The device of any one of claims 2 to 7, wherein the first ion trap module (2A) has a thermal expansion coefficient that is different from the thermal expansion coefficient of the first module (4A).

9. A device as claimed in any one of claims 2 to 8, wherein the first ion trap module (2A) and the first module (4A) are configured to provide completely different functionalities for the operation of the device.

10. The device of claim 4, wherein the first module (4A) and the second module (4B) are mounted on the same side of the first ion trap module (2A).

11. The device of claim 4, wherein the first module (4A) and the second module (4B) are mounted on opposite sides of the first ion trap module (2A).

12. A device as claimed in any one of claims 2 to 11, wherein: The first ion trap module (2A) and the first module (4A) are mechanically coupled by at least one of gluing and bonding, and / or The first ion trap module (2A) and the first module (4A) are electrically coupled by at least one of solder bumps, anisotropic conductive adhesives, and wire bonding, and / or The first ion trap module (2A) and the first module (4A) are optically coupled via at least one of a waveguide (46) and a free space beam (50).

13. A device as claimed in any preceding claim, wherein the first electrode (62, 64) and the second electrode (62, 64) are arranged in a common plane.

14. A device as claimed in any preceding claim, wherein: The first electrodes (62, 64) are DC electrodes, and The second electrodes (62, 64) are DC electrodes.

15. A device as claimed in any one of claims 1 to 13, wherein: The first electrodes (62, 64) are RF electrodes and DC electrodes, and The second electrodes (62, 64) are RF electrodes and DC electrodes.

16. A device as claimed in any preceding claim, further comprising: At least one connector module (8A) is configured to mechanically connect the first ion trap module (2A) and the second ion trap module (2B).

17. A device as claimed in any preceding claim, wherein: The first ion trap module (2A) includes at least one protruding portion arranged at the outer periphery of the first ion trap module (2A), The second ion trap module (2B) comprises at least one notch arranged at the outer periphery of the second ion trap module (2B), and The first ion trap module (2A) and the second ion trap module (2B) are mechanically connected by inserting the at least one protruding portion of the first ion trap module (2A) into the at least one recess of the second ion trap module (2B).

18. A method for assembling a device for controlling trapped ions, the method comprising: Providing a first ion trap module (2A) including a first electrode (62, 64), wherein the first electrode (62, 64) is configured to trap ions in a region above the first electrode (62, 64); as well as A second ion trap module (2B) including a second electrode (62, 64) is arranged laterally beside the first ion trap module (2A), wherein the second electrode (62, 64) is configured to trap ions in a region above the second electrode (62, 64); as well as The first ion trap module (2A) and the second ion trap module (2B) are mechanically connected, wherein the first electrode (62, 64) and the second electrode (62, 64) are aligned relative to each other so as to be configured to provide shuttling of ions between the first ion trap module (2A) and the second ion trap module (2B) along the first electrode (62, 64) and the second electrode (62, 64).

19. The method of claim 18, further comprising: testing at least one of the first ion trap module (2A) and the second ion trap module (2B) for defects; as well as Discard defective modules from assembling the device.

20. The method of claim 18 or 19, further comprising: Installing the first module (4A) on the first installation area (6A) of the first ion trap module (2A); as well as The first ion trap module (2A) and the first module (4A) are electrically and / or optically coupled via the first mounting area (6A).