Flexible perovskite solar cell containing Al2O3 buried bottom interface processing layer and preparation method of flexible perovskite solar cell

Abstract

The invention discloses a flexible perovskite solar cell containing an Al2O3 buried interface processing layer and a preparation method of the flexible perovskite solar cell, and belongs to the technical field of perovskite cells. According to the perovskite solar cell, the Al2O3 buried interface processing layer is arranged between the SnO2 electron transport layer and the FA0. 96MA0. 04Cs0. 04PbI3 perovskite absorption layer, and the introduction of the Al2O3 buried interface processing layer effectively inhibits the non-radiative recombination of carriers at a buried interface. Meanwhile, due to the flat substrate surface, the crystal quality of the perovskite thin film in the next step can be improved, holes in a buried interface can be eliminated, thin film crystal grains of the perovskite absorption layer are uniform, and further development of the flexible perovskite solar cell can be promoted due to the excellent photoelectric property and the device efficiency of the perovskite absorption layer.

Description

Technical Field

[0001] The present invention belongs to the technical field of flexible perovskite solar cells and specifically relates to a 2 O 3 Flexible perovskite solar cell with buried interface treatment layer and preparation method thereof. Background Art

[0002] In recent years, flexible perovskite solar cells have great application prospects in the fields of aerospace and flexible electronics due to their high power-to-mass ratio, adjustable band gap, simple preparation process, low cost, and easy portability. Through the joint efforts of scientific researchers, the photoelectric conversion efficiency of flexible perovskite solar cells has now exceeded 25%. Tin oxide is often used as an electron transport layer in traditional flexible perovskite solar cells. However, the tin dangling bonds and oxygen vacancy defects on the surface of the tin oxide electron transport layer will capture carriers, thereby affecting the quality of the buried interface of the flexible perovskite solar cell, resulting in an increase in non-radiative recombination of carriers, and the final device photoelectric conversion efficiency is difficult to improve.

[0003] For SnO 2 Electron transport layer / perovskite layer buried interface defects. Compared with traditional rigid glass substrates, the surface energy between flexible substrates and perovskite precursor solutions is significantly different, resulting in an insufficient number of nucleation sites. Therefore, perovskites tend to crystallize unevenly on flexible substrates, and the perovskite film composed of irregularly shaped particles has poor coverage, resulting in low quality of the buried interface of the perovskite film, making it difficult to improve the photoelectric conversion efficiency of the final device. Summary of the invention

[0004] The object of the present invention is to overcome the disadvantages of the prior art and provide a 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof are provided to solve the problems of poor film quality of the existing perovskite buried interface, serious carrier non-radiative recombination losses, and difficulty in improving device performance.

[0005] In order to achieve the above object, the present invention adopts the following technical solutions:

[0006] A kind of containing Al 2 O 3 A method for preparing a flexible perovskite solar cell with a buried interface treatment layer, characterized in that it comprises the following steps:

[0007] Step 1, washing the organic polymer substrate with a cleaning agent and water in sequence, drying it, and then treating it with ultraviolet ozone to obtain a pretreated organic polymer substrate;

[0008] Step 2: Spin coating SnO on organic polymer substrate 2Precursor liquid, after heat treatment, SnO 2 Electron transport layer;

[0009] Step 3: Al 2 O 3 Nanoparticle solution spin-coated on SnO 2 On the electron transport layer, Al is obtained after heat treatment 2 O 3 Buried bottom interface treatment layer;

[0010] Step 4, in Al 2 O 3 Spin coating FA on the buried interface treatment layer 0.96 MA 0.04 Cs 0.04 PbI 3 A perovskite precursor solution is heat treated to obtain a perovskite absorber layer;

[0011] Step 5, spin coating the PEAI perovskite passivation solution on the perovskite absorption layer to obtain a PEAI perovskite passivation layer;

[0012] Step 6, spin coating the Spiro-OMeTAD solution on the PEAI passivation layer to obtain a Spiro-OMeTAD hole transport layer;

[0013] Step 7: evaporate a metal electrode on the Spiro-OMeTAD hole transport layer to prepare a perovskite solar cell.

[0014] A further improvement of the present invention is:

[0015] Preferably, in step 3, the Al 2 O 3 The nanoparticle solution is Al 2 O 3 Nanoparticles were dispersed in isopropanol mixed solution, Al 2 O 3 The mixing volume ratio of nanoparticles and isopropanol is 1:(1-10).

[0016] Preferably, in step 3, the magnetic stirring speed is 200-1500 rpm, and the magnetic stirring time is 1 to 5 hours.

[0017] Preferably, in step 3, Al 2 O 3 The spin coating speed of the nanoparticle solution is 1000-5000 rpm, and the spin coating time is 10-30 s.

[0018] Preferably, in step 3, the heat treatment time is 90-120° C. and the heat treatment time is 5-30 min.

[0019] Preferably, in step 3, the heat-treated Al 2 O 3 The buried interface treatment layer is treated with ultraviolet ozone for 5 to 20 minutes.

[0020] Preferably, in step 4, FA 0.96 MA 0.04 Cs 0.04 PbI 3 The concentration of the perovskite precursor solution is 1.2-1.7M.

[0021] Preferably, in step 2, SnO 2 The spin coating speed of the electron transport layer is 4000-6000 rpm, the spin coating time is 30-50 s, the heat treatment temperature is 100-150° C., and the heat treatment time is 30-90 min.

[0022] Preferably, in step 4, the spin coating speed of the perovskite precursor solution is 6000 rpm, and the spin coating time is 5 s; the heat treatment temperature is 100-120° C., and the heat treatment time is 10-30 min.

[0023] A kind of Al-containing prepared by any one of the preparation methods above 2 O 3 The flexible perovskite solar cell with buried interface treatment layer comprises an organic polymer substrate, a SnO 2 Electron transport layer, Al 2 O 3 Buried interface treatment layer, FA 0.96 MA 0.04 Cs 0.04 PbI 3 Perovskite absorber layer, PEAI perovskite passivation layer, Spiro-OMeTAD hole transport layer and metal electrode.

[0024] Compared with the prior art, the present invention has the following beneficial effects:

[0025] The invention discloses a method comprising Al 2 O 3 A method for preparing a flexible perovskite solar cell with a buried interface treatment layer, wherein the method comprises: 2 O 3 With H 2 O mixed, and the diluted solution was coated on SnO 2 On the electron transport layer. Because the defects on the surface of the tin oxide electron transport layer will capture carriers and increase non-radiative recombination. 2 O 3The introduction of the buried interface treatment layer acts as a blocking layer. After the aluminum oxide dispersion is deposited, it first fills the vacancies on the tin oxide surface, making the tin oxide / aluminum oxide surface smoother. Secondly, the aluminum oxide layer, as a blocking layer, can also reduce the diffusion of the perovskite layer into the tin oxide layer, which helps to improve the device performance. Aluminum oxide as a blocking layer reduces the contact between the perovskite layer and the tin oxide electron transport layer, effectively inhibiting the non-radiative recombination of carriers at the buried interface. At the same time, the flat buried surface is conducive to the formation of the perovskite film in the next step. The perovskite precursor solution produces more nucleation sites, improves the crystallization quality, eliminates the holes in the buried interface, and makes the film grains of the perovskite absorption layer uniform, improves the morphology of the perovskite film, increases the perovskite grains, reduces the grain boundaries, reduces the buried interface defects, improves the extraction efficiency of carriers, and reduces the non-radiative recombination losses of carriers caused by interface defects. It is an effective strategy to ultimately improve the photoelectric conversion efficiency and stability of the device. The excellent photoelectric performance and device efficiency of this perovskite solar cell will help promote the further development of flexible perovskite solar cells.

[0026] Furthermore, Al 2 O 3 Nanoparticles make SnO 2 The surface of the electron transport layer is smoother, allowing the perovskite layer to be deposited evenly into a film.

[0027] Furthermore, by limiting the spin coating speed and spin coating time, the thickness of the buried interface passivation layer formed by spin coating can meet the requirements.

[0028] The present invention also discloses a method comprising Al 2 O 3 The flexible perovskite solar cell with buried interface treatment layer effectively suppresses the non-radiative recombination of carriers by reducing the contact between the perovskite layer and the tin oxide electron transport layer, and finally achieves a maximum photoelectric conversion efficiency of 23.83%. 2 The electron transport layer and the flat substrate surface are conducive to improving the crystallization quality of perovskite thin films. Its excellent photoelectric performance and device efficiency will help promote the further development of flexible perovskite solar cells. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] Figure 1 Al prepared by the method described in the examples of the present invention 2 O 3 Nanoparticles treatment of SnO 2 Electron transport layer (Target) and reference SnO 2 Electron mobility diagram of the electron transport layer (Control).

[0030] Figure 2 Al prepared by the method described in the examples of the present invention2 O 3 Nanoparticles treatment of SnO 2 Electron transport layer (Target) and reference SnO 2 Conductivity plot of the electron transport layer (Control).

[0031] Figure 3 The scanning electron microscope (SEM) images of the upper surface of the perovskite film on different substrates prepared by the method described in the examples of the present invention; wherein (a) is a comparative example directly on SnO 2 Preparation of perovskite film by electron transport layer; (b) Figure 1 shows the direct deposition of perovskite film on SnO 2 Preparation of perovskite thin films with electron transport layers;

[0032] Figure 4 The X-ray diffraction (XRD) patterns of perovskite films on different substrates prepared by the method described in the examples of the present invention.

[0033] Figure 5 The X-ray diffraction peak intensity and half-maximum width (FWHM) diagram of perovskite films on different substrates prepared by the method described in the examples of the present invention.

[0034] Figure 6 The scanning electron microscope (SEM) images of the buried interface of the perovskite film on different substrates prepared by the method described in the examples of the present invention; Figure (a) is a comparative example directly on SnO 2 Preparation of perovskite film by electron transport layer; (b) Figure 1 shows the direct deposition of perovskite film on SnO 2 Preparation of perovskite thin films with electron transport layers;

[0035] Figure 7 This is a comparison of steady-state fluorescence (PL) spectra of perovskite films on different substrates prepared by the method described in the examples of the present invention.

[0036] Figure 8 This is a comparison chart of time-resolved fluorescence spectra (TRPL) of perovskite films on different substrates prepared by the method described in the examples of the present invention. DETAILED DESCRIPTION

[0037] The present invention is further described in detail below in conjunction with the accompanying drawings:

[0038] In order to enable those skilled in the art to understand the characteristics and effects of the present invention, the following is a general description and definition of the terms and expressions mentioned in the specification and claims. Unless otherwise specified, all technical and scientific terms used in the text are the common meanings understood by those skilled in the art for the present invention. In the event of a conflict, the definition in this specification shall prevail.

[0039] In this document, unless otherwise specified, “includes,” “including,” “contains,” “has,” or similar terms cover the meanings of “consisting of” and “mainly consisting of,” for example, “A includes a” covers the meanings of “A includes a and other” and “A only includes a.”

[0040] The present invention will be further described below in conjunction with specific embodiments. It should be understood that these embodiments are only used to illustrate the present invention and are not intended to limit the scope of the present invention. In addition, it should be understood that after reading the content taught by the present invention, those skilled in the art can make various changes or modifications to the present invention, and these equivalent forms fall within the scope limited by the appended claims of the application equally.

[0041] The following examples use conventional instruments and equipment in the art. The experimental methods in the following examples where specific conditions are not specified are usually carried out under conventional conditions or under conditions recommended by the manufacturer. The various raw materials used in the following examples are conventional commercial products unless otherwise specified, and their specifications are conventional specifications in the art. In the specification of the present invention and the following examples, unless otherwise specified, "%" means weight percentage, "part" means weight part, and ratio means weight ratio.

[0042] The embodiment of the present invention is a method comprising Al 2 O 3 A method for preparing a flexible perovskite solar cell with a buried interface treatment layer comprises the following steps:

[0043] Step 1, cleaning the flexible organic polymer substrate: wipe the surface impurities with dust-free paper, then use a cleaning agent to ultrasonically clean for 30 minutes, deionized water to ultrasonically clean twice for 30 minutes each, blow dry with a nitrogen gun, and treat with ultraviolet ozone for 5-20 minutes for standby use, so as to remove the organic residues remaining on the surface of the flexible organic polymer substrate and increase the wettability of the surface of the flexible organic polymer substrate;

[0044] The organic polymer base is PET / ITO, and the cleaning agent is common organic solvents such as ethanol and isopropanol.

[0045] Step 2, preparation of SnO 2 Electron transport layer:

[0046] Treating the flexible organic polymer substrate with UV-ozone for 5 to 20 minutes;

[0047] SnO 2 Dissolve in water to obtain SnO 2 Precursor solution: SnO 2 The precursor solution is spin-coated at 4000-6000 rpm for 30-50 seconds, placed on a hot plate at 100-150°C for 30-90 minutes, and treated with UV-ozone for 5-20 minutes to obtain SnO2 Electron transport layer.

[0048] Step 3, preparation of Al 2 O 3 Buried bottom interface treatment layer;

[0049] First, Al 2 O 3 The nanoparticles were dispersed in isopropanol with a dispersion volume ratio of 20% by mass of Al 2 O 3 Nanoparticle alcohol dispersion according to the volume ratio of Al 2 O 3 :IPA (isopropyl alcohol) = 1: (1-10) to dilute to form an Al2O3 solution with a mass fraction of 20% 2 O 3 The nanoparticle alcohol dispersion was stirred at room temperature with a magnetic speed of 200-1500 rpm for 1 to 5 hours to obtain Al 2 O 3 Nanoparticle solution, exemplary Al 2 O 3 The concentrations of the nanoparticle solutions were 1%, 2%, 5%, 10%, 15% and 20%.

[0050] As a preferred embodiment, Al 2 O 3 The particle size of nanoparticles is about 100 nm.

[0051] It should be noted that if the concentration of aluminum oxide is too low, a dense blocking layer may not be formed, but if the concentration is too high, its arrangement at the interface may not be so regular. However, it is worth noting that after using aluminum oxide, the performance of the film and the device are improved.

[0052] Different concentrations of Al 2 O 3 The nanoparticle solution was spin-coated on SnO at a speed of 1000-5000 rpm and a spin-coating time of 10-30 s. 2 On the electron transport layer, the heat treatment process is to coat the Al 2 O 3 SnO nanoparticle solution 2 The electron transport layer is placed on a hot plate and heated at 90-120°C for 5-30 minutes, and then subjected to UV-ozone treatment for 5-20 minutes;

[0053] Step 4, preparing a perovskite absorption layer;

[0054] Preparation of 1.2-1.7 M FA 0.96 MA 0.04 Cs 0.04PbI 3 Perovskite precursor solution, FA 0.96 MA 0.04 Cs 0.04 PbI 3 The precursor solution is stirred for more than 4 to 6 hours, and then filtered through a polytetrafluoroethylene filter membrane with a pore size of 0.45 μm to obtain a clarified perovskite precursor solution for use;

[0055] The perovskite precursor solution is evenly coated on the Al 2 O 3 The surface of the bottom interface treatment layer is buried; the surface is obtained by spin coating at 6000 rpm for 50 seconds; when the spin coating starts for 5 to 15 seconds, 800 to 1200 μL of ether is added to the surface of the substrate, and the spin coating is continued for the remaining time; the surface is placed on a hot plate at 100 to 120° C. for 10 to 30 minutes to obtain a perovskite absorption layer;

[0056] Step 5: The preparation of PEAI for passivating the perovskite layer is as follows: weigh 5 mg of PEAI and dissolve it in 1 mL of isopropanol, stir for more than 4 hours to obtain a PEAI perovskite passivation solution; spin-coat the perovskite passivation solution on the perovskite absorption layer at a speed of 3000-5000 rpm for 30-40 seconds to obtain a passivation layer.

[0057] Step 6: Preparation of Spiro-OMeTAD hole transport layer. When preparing the hole transport layer solution, 0.90g of Spiro-OMeTAD needs to be dissolved in 1mL of chlorobenzene, and 22μL of pre-configured Li-TFSI solution (520mg / mL) and 36μL of tBP solution are added. Stir at room temperature in the dark for 4-6h, and then filter with a polytetrafluoroethylene filter membrane with a pore size of 0.45μm to obtain the Spiro-OMeTAD solution; the annealed perovskite film is cooled to room temperature, and the Spiro-OMeTAD solution is spin-coated on the perovskite substrate at a rotation speed of 5000rpm for 30s to obtain a hole transport layer, which is placed in a dry bowl and stored for 4 to 6 hours.

[0058] Step 6, Au electrode evaporation: The oxidized film is transferred into the evaporation chamber and a 60-120 nm thick Au electrode is deposited by thermal evaporation. The effective area of ​​the mask is 0.09 cm 2 .

[0059] Step 7: Use a solar simulator to generate a standard sunlight (AM 1.5G, 100mW / cm 2 ) to measure the open circuit voltage (V OC ), short circuit current (J SC), fill factor (FF) and photoelectric conversion efficiency (PCE) and other parameters of the solar simulator. The scanning range is 1.2-0V, the delay time is 10-50ms, and the scanning step width is 0.01-0.02V.

[0060] The structure of the perovskite solar cell device in the present invention is a flexible organic polymer substrate, SnO 2 Electron transport layer, Al 2 O 3 Buried interface treatment layer, perovskite absorber layer, Spiro-OMeTAD and Au electrode.

[0061] The present invention uses Al 2 O 3 Nanoparticles spin-coated on SnO 2 The electron transport layer surface improves the SnO 2 The electron mobility and conductivity of the electron transport layer effectively inhibit the non-radiative recombination of carriers at the buried interface and enhance the carrier transport efficiency. At the same time, the crystal quality of the perovskite film is improved and the holes at the buried interface of the perovskite film are reduced.

[0062] The following is further described in conjunction with specific embodiments.

[0063] Comparative Example

[0064] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0065] Step 1, preparing the electron transport layer:

[0066] First, SnO 2 The volume ratio of SnO 2 :H 2 O=1:2 to dilute and obtain SnO 2 Precursor fluid.

[0067] The organic polymer flexible substrate was treated with UV ozone for 12 minutes. 2 The precursor solution was spin-coated on an organic polymer flexible substrate at 5000 rpm for 40 seconds and placed on a hot plate at 100 °C for 40 minutes to obtain SnO 2 Electron transport layer.

[0068] Step 2: Preparation of perovskite absorption layer

[0069] Preparation of perovskite absorber layer: Pipette 70 μl of 1.4 M FA 0.96 MA 0.04 Cs 0.04PbI 3 The perovskite precursor solution is evenly coated on the Al 2 O 3 The bottom interface passivation layer was buried; at the beginning of spin coating, 1000 μL of anti-solvent ether was added to the perovskite surface, and then the prepared FA 0.96 MA 0.04 Cs 0.04 PbI 3 The perovskite film was annealed on a hot plate at 120°C for 30 min.

[0070] Step 3: Preparation of hole transport layer

[0071] To prepare the hole transport layer, 0.90 g of Spiro-OMeTAD was dissolved in 1 mL of chlorobenzene, and 22 μL of pre-prepared Li-TFSI solution (520 mg / mL) and 36 μL of tBP solution were added, stirred at room temperature in the dark for 6 h, and then filtered through a polytetrafluoroethylene filter membrane with a pore size of 0.45 μm. The Spiro-OMeTAD solution was obtained; the annealed perovskite film was cooled to room temperature, and the Spiro-OMeTAD solution was spin-coated on the perovskite substrate at a speed of 5000 rpm for 30 s to obtain the hole transport layer, which was stored in a dark and dry place for 6 hours.

[0072] Step 4, Au electrode evaporation: The oxidized film is transferred into the evaporation chamber and 80nm thick Au electrode is deposited by thermal evaporation. The effective area of ​​the mask is 0.09cm 2 .

[0073] Example 1

[0074] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0075] Step 1, preparing the electron transport layer:

[0076] First, SnO 2 The volume ratio of SnO 2 :H 2 O=1:2 to dilute and obtain SnO 2 Precursor fluid.

[0077] The organic polymer flexible substrate was treated with UV ozone for 12 minutes. 2 The precursor solution was spin-coated on an organic polymer flexible substrate at 5000 rpm for 40 seconds and placed on a hot plate at 100 °C for 40 minutes to obtain SnO 2 Electron transport layer.

[0078] Preparation of Al 2 O 3 Buried interface passivation layer:

[0079] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0080] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0081] Preparation of perovskite absorber layer: Pipette 70 μl of 1.4 M FA 0.96 MA 0.04 Cs 0.04 PbI 3 The perovskite precursor solution is evenly coated on the Al 2 O 3 The bottom interface passivation layer was buried; at the beginning of spin coating, 1000 μL of anti-solvent ether was added to the perovskite surface, and then the prepared FA 0.96 MA 0.04 Cs 0.04 PbI 3 The perovskite film was annealed on a hot plate at 120°C for 30 min.

[0082] To prepare the hole transport layer, 0.90 g of Spiro-OMeTAD was dissolved in 1 mL of chlorobenzene, and 22 μL of pre-prepared Li-TFSI solution (520 mg / mL) and 36 μL of tBP solution were added, stirred at room temperature in the dark for 6 h, and then filtered through a polytetrafluoroethylene filter membrane with a pore size of 0.45 μm. The Spiro-OMeTAD solution was obtained; the annealed perovskite film was cooled to room temperature, and the Spiro-OMeTAD solution was spin-coated on the perovskite substrate at a speed of 5000 rpm for 30 s to obtain the hole transport layer, which was stored in a dark and dry place for 6 hours.

[0083] Au electrode evaporation: The oxidized film was transferred into the evaporation chamber and 80nm thick Au electrode was deposited by thermal evaporation. The effective area of ​​the mask was 0.09cm 2 .

[0084] The characterization analysis of a high-efficiency perovskite solar cell described in the present invention includes the following contents:

[0085] Figure 1 Al prepared by the method described in the examples of the present invention 2 O 3 Nanoparticles treatment of SnO 2 Electron transport layer (Target) and comparative SnO 2 Electron mobility diagram of the electron transport layer (Control), via Al 2 O 3 SnO after nanoparticle treatment 2 The electron mobility of the electron transport layer is greatly improved.

[0086] Figure 2 Al prepared by the method described in the examples of the present invention 2 O 3 Nanoparticles treatment of SnO 2 Electron transport layer (Target) and comparative SnO 2 Conductivity diagram of the electron transport layer (Control), via Al 2 O 3 SnO after nanoparticle treatment 2 The conductivity of the electron transport layer is greatly improved.

[0087] Figure 3 The scanning electron microscope (SEM) images of the upper surface of the perovskite film on different substrates (comparative example and example 1) prepared by the method described in the examples of the present invention show that the grains in the optimized perovskite film are significantly enlarged.

[0088] Figure 4 The X-ray diffraction (XRD) diagrams of perovskite films on different substrates prepared by the method described in the examples of the present invention show that the peak intensity of the optimized perovskite film is significantly enhanced.

[0089] Figure 5 Figure 2 is the peak intensity and half-peak width (FWHM) of the perovskite film X-ray diffraction on different substrates prepared by the method described in the example of the present invention. The peak of the perovskite film is enhanced and the half-peak width is reduced, which means that after Al 2 O 3 The perovskite film spin-coated on the nanoparticle treatment layer has better crystalline quality.

[0090] Figure 6 The scanning electron microscope (SEM) images of the buried interface of the perovskite film on different substrates prepared by the method described in the examples of the present invention represent the buried interface of the perovskite film on the substrate after Al 2 O 3 The buried interface voids of the perovskite film spin-coated on the nanoparticle treatment layer are reduced.

[0091] Figure 7 The steady-state fluorescence (PL) spectra of the perovskite films on different substrates prepared by the method described in the examples of the present invention are compared.2 O 3 The fluorescence intensity of the perovskite film spin-coated on the nanoparticle treatment layer is significantly lower than that of the reference perovskite film, indicating that the electron transport layer effectively extracts the photogenerated carriers and reduces the non-radiative recombination of carriers.

[0092] Figure 8 The TRPL spectra of the perovskite films prepared on different substrates by the method described in the examples of the present invention are compared. The lifetime of the photogenerated carriers in the optimized perovskite film is significantly reduced. Figure 7 The PL data in the figure correspond to that in the figure, indicating that the non-radiative recombination of carriers is reduced.

[0093] Example 2

[0094] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0095] Preparation of Al 2 O 3 Buried interface passivation layer:

[0096] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:1, and the solution was stirred at room temperature for 1 hour with a magnetic spindle at a speed of 1000 rpm.

[0097] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0098] The other steps are the same as those in Example 1.

[0099] Example 3

[0100] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0101] Preparation of Al 2 O 3 Buried interface passivation layer:

[0102] Al 2 O 3The nanoparticles were dispersed in isopropanol at a volume ratio of 1:2, and the solution was stirred at room temperature for 1 hour with a magnetic spindle at a speed of 1000 rpm.

[0103] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0104] The other steps are the same as those in Example 1.

[0105] Example 4

[0106] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0107] Preparation of Al 2 O 3 Buried interface passivation layer:

[0108] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:6, and the solution was stirred at room temperature for 1 h with a magnetic spindle at a speed of 1000 rpm;

[0109] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0110] The other steps are the same as those in Example 1.

[0111] Example 5

[0112] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0113] Preparation of Al 2 O 3 Buried interface passivation layer:

[0114] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:8, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0115] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0116] The other steps are the same as those in Example 1.

[0117] Example 6

[0118] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0119] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:9, and the solution was stirred at room temperature for 1 hour with a magnetic rotation speed of 1000 rpm;

[0120] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0121] The other steps are the same as those in Example 1.

[0122] Example 7

[0123] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0124] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0125] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0126] Al 2 O 3 The precursor solution was maintained at 1000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al2 O 3 buried bottom interface passivation layer;

[0127] The other steps are the same as those in Example 1.

[0128] Example 8

[0129] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0130] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0131] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0132] Al 2 O 3 The precursor solution was maintained at 2000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0133] The other steps are the same as those in Example 1.

[0134] Example 9

[0135] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0136] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0137] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0138] Al 2 O 3 The precursor solution was maintained at 4000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0139] The other steps are the same as those in Example 1.

[0140] Example 10

[0141] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0142] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0143] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0144] Al 2 O 3 The precursor solution was maintained at 5000 rpm for 30 seconds, placed on a 120°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0145] The other steps are the same as those in Example 1.

[0146] Embodiment 11

[0147] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0148] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0149] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0150] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 90°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0151] The other steps are the same as those in Example 1.

[0152] Example 12

[0153] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0154] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0155] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0156] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 100°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0157] The other steps are the same as those in Example 1.

[0158] Example 13

[0159] The present invention discloses a method comprising Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0160] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0161] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0162] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 110°C hot plate for 30 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0163] The other steps are the same as those in Example 1.

[0164] Embodiment 14

[0165] The present invention discloses a method comprising Al2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0166] Preparation of Al 2 O 3 buried bottom interface passivation layer;

[0167] Al 2 O 3 The nanoparticles were dispersed in isopropanol at a volume ratio of 1:4, and the solution was stirred at room temperature for 1 hour with a magnetic speed of 1000 rpm.

[0168] Al 2 O 3 The precursor solution was maintained at 3000 rpm for 30 seconds, placed on a 120°C hot plate for 10 minutes, and treated with UV-ozone for 10 minutes to obtain Al 2 O 3 buried bottom interface passivation layer;

[0169] The other steps are the same as those in Example 1.

[0170] Embodiment 15

[0171] In this embodiment, the concentration of the perovskite precursor solution is 1.5 M, and the remaining steps and parameters are the same as in Embodiment 1.

[0172] Example 16

[0173] In this embodiment, the concentration of the perovskite precursor solution is 1.2 M, and the remaining steps and parameters are the same as in Embodiment 1.

[0174] Embodiment 17

[0175] In the embodiment, the concentration of the perovskite precursor solution is 1.7 M, and the remaining steps and parameters are the same as those in Embodiment 1.

[0176] Embodiment 18

[0177] In this embodiment, the amount of ether added is 800 μL, and the remaining steps and parameters are the same as in Example 1.

[0178] Embodiment 19

[0179] In this embodiment, the amount of ether added is 1200 μL, and the remaining steps and parameters are the same as in Example 1.

[0180] Embodiment 20

[0181] In this embodiment, the amount of ether added is 1000 μL, and the remaining steps and parameters are the same as in Example 1.

[0182] Embodiment 21

[0183] In this embodiment, after ether is added dropwise to the perovskite absorption layer, the layer is placed on a hot plate at 100° C. for 30 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0184] Embodiment 22

[0185] In this embodiment, after ether was added dropwise to the perovskite absorption layer, the layer was placed on a hot plate at 110° C. for 10 min, and the remaining steps and parameters were the same as in Embodiment 1.

[0186] Embodiment 23

[0187] In this embodiment, after ether is added dropwise to the perovskite absorption layer, the layer is placed on a hot plate at 120° C. for 20 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0188] Embodiment 24

[0189] In this embodiment, SnO 2 The spin coating speed of the precursor solution was 4000 rpm, the spin coating time was 50 s, and the remaining steps and parameters were the same as in Example 1.

[0190] Embodiment 25

[0191] In this embodiment, SnO 2 The spin coating speed of the precursor solution was 6000 rpm, the spin coating time was 30 s, and the remaining steps and parameters were the same as in Example 1.

[0192] Step 26

[0193] In this embodiment, SnO 2 The heat treatment temperature after spin coating of the precursor solution is 100° C., the heat treatment time is 90 min, and the remaining steps and parameters are the same as in Example 1.

[0194] Embodiment 27

[0195] In this embodiment, SnO 2 The heat treatment temperature after spin coating of the precursor solution is 150° C., the heat treatment time is 30 min, and the remaining steps and parameters are the same as in Example 1.

[0196] Embodiment 28

[0197] In this embodiment, the heat treatment temperature of the perovskite absorption layer is 100° C., the heat treatment time is 30 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0198] Embodiment 29

[0199] In this embodiment, the heat treatment temperature of the perovskite absorption layer is 110° C., the heat treatment time is 10 minutes, and the remaining steps and parameters are the same as in Embodiment 1.

[0200] Embodiment 30

[0201] In this embodiment, Al 2 O 3 When the nanoparticle alcohol dispersion and water are mixed and diluted, the magnetic rotation speed is 200 rpm, the stirring time is 5 hours, and the remaining steps and parameters are the same as in Example 1.

[0202] Embodiment 31

[0203] In this embodiment, Al 2 O 3 When the nanoparticle alcohol dispersion and water are mixed and diluted, the magnetic rotation speed is 1500 rpm, the stirring time is 1 hour, and the remaining steps and parameters are the same as in Example 1.

[0204] Embodiment 32

[0205] In this embodiment, Al 2 O 3 The UV-ozone treatment time of the buried interface treatment layer is 5 minutes, and the remaining steps and parameters are the same as those in Example 1.

[0206] Embodiment 33

[0207] In this embodiment, Al 2 O 3 The UV-ozone treatment time of the buried interface treatment layer is 20 minutes, and the remaining steps and parameters are the same as those in Example 1.

[0208] Comparative Example 1

[0209] The method described in this embodiment comprises Al 2 O 3 A flexible perovskite solar cell with a buried interface treatment layer and a preparation method thereof, comprising the following preparation steps:

[0210] No Al in the device 2 O 3 Buried interface treatment layer.

[0211] The other steps are the same as those in Example 1.

[0212] The above-mentioned embodiments were tested to obtain Table 1, which shows the Al with different concentrations prepared by the method described in the examples of the present invention. 2 O 3 Comparison of buried interface passivation layer and process on the photoelectric conversion efficiency of flexible perovskite solar cells. 2 O 3 and H 2 When the ratio of O is 1:4, the device achieves the best photoelectric conversion efficiency of 23.83%.

[0213] Table 1 Photoelectric conversion efficiency of the examples

[0214]

[0215]

[0216] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer, characterized in that: The following steps are involved: Step 1, washing the organic polymer substrate with a cleaning agent and water in sequence, drying it, and then treating it with ultraviolet ozone to obtain a pretreated organic polymer substrate; Step 2, spin coating a SnO2 precursor solution on an organic polymer substrate, and obtaining a SnO2 electron transport layer after heat treatment; Step 3, spin coating the Al2O3 nanoparticle solution on the SnO2 electron transport layer, and obtaining the Al2O3 buried interface treatment layer after heat treatment; Step 4: Spin-coat FA on the Al2O3 buried interface treatment layer 0.96 MA 0.04 Cs 0.04 PbI3 perovskite precursor solution, after heat treatment, obtains perovskite absorption layer; Step 5, spin coating a PEAI perovskite passivation solution on the perovskite absorption layer to obtain a PEAI perovskite passivation layer; Step 6, spin coating the Spiro-OMeTAD solution on the PEAI passivation layer to obtain a Spiro-OMeTAD hole transport layer; Step 7: evaporate a metal electrode on the Spiro-OMeTAD hole transport layer to prepare a perovskite solar cell.

2. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 3, the Al2O3 nanoparticle solution is a mixed solution of Al2O3 nanoparticles dispersed in isopropanol, and the mixing volume ratio of Al2O3 nanoparticles to isopropanol is 1:(1-10).

3. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 3, the magnetic stirring speed is 200-1500 rpm, and the magnetic stirring time is 1-5 hours.

4. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 3, the spin coating speed of the Al2O3 nanoparticle solution is 1000-5000 rpm, and the spin coating time is 10-30 s.

5. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 3, the heat treatment time is 90-120° C. and the heat treatment time is 5-30 min.

6. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 3, the Al2O3 buried interface treatment layer after heat treatment is treated by ultraviolet ozone for 5 to 20 minutes.

7. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 4, FA 0.96 MA 0.04 Cs 0.04 The concentration of the PbI3 perovskite precursor solution is 1.2-1.7M.

8. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 2, the spin coating speed of the SnO2 electron transport layer is 4000-6000 rpm, the spin coating time is 30-50 s, the heat treatment temperature is 100-150°C, and the heat treatment time is 30-90 min.

9. The method for preparing a flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer according to claim 1, characterized in that: In step 4, the spin coating speed of the perovskite precursor solution is 6000 rpm, and the spin coating time is 5 s; the heat treatment temperature is 100-120° C., and the heat treatment time is 10-30 min.

10. A flexible perovskite solar cell comprising an Al2O3 buried interface treatment layer prepared by the preparation method according to any one of claims 1 to 9, characterized in that: It includes an organic polymer substrate, a SnO2 electron transport layer, an Al2O3 buried bottom interface treatment layer, and a FA 0.96 MA 0.04 Cs 0.04 PbI3 perovskite absorption layer, PEAI perovskite passivation layer, Spiro-OMeTAD hole transport layer and metal electrode.

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