Signal measurement method, system and equipment of semiconductor device and storage medium

Abstract

The invention provides a signal measurement method, system and equipment of a semiconductor device and a storage medium, and belongs to the technical field of semiconductor measurement. The semiconductor device comprises a crystal grain welding pad, the crystal grain welding pad receives a data signal of a preset frequency through a wire, and a first probe point and a second probe point are arranged at a first position and a second position on the wire respectively. The method comprises the following steps: obtaining a first transfer function between a first probe point and a crystal grain bonding pad; obtaining a second transfer function between the second probe point and the crystal grain bonding pad; respectively obtaining a first signal waveform function of the first probe point and a second signal waveform function of the second probe point; and determining a data signal waveform function at the grain bonding pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and a predetermined frequency. The accuracy of signal measurement can be improved.

Description

Technical Field

[0001] The present disclosure relates to the field of semiconductor measurement technology, and in particular, to a signal measurement method, system, computer equipment, and computer-readable storage medium for semiconductor devices. Background Art

[0002] A semiconductor device generally includes a plurality of dies, each of which has a pad. When measuring the waveform of a data signal at a die pad, if the load impedance of the die pad does not match the impedance of a trace for transmitting the data signal, the measurement result of the measurement method in the related art has a large error. Summary of the invention

[0003] The purpose of the present disclosure is to provide a signal measurement method for a semiconductor device, which can improve the accuracy of signal measurement.

[0004] An embodiment of the present disclosure provides a signal measurement method for a semiconductor device, wherein the semiconductor device includes a grain pad, the grain pad receives a data signal of a predetermined frequency through a routing, and a first needle measuring point and a second needle measuring point are respectively set at a first position and a second position on the routing; wherein the method includes: obtaining a first transfer function between the first needle measuring point and the grain pad; obtaining a second transfer function between the second needle measuring point and the grain pad; obtaining a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point, respectively; and determining a data signal waveform function at the grain pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0005] An embodiment of the present disclosure provides a signal measurement device for a semiconductor device, wherein the semiconductor device includes a grain pad, the grain pad receives a data signal of a predetermined frequency through a routing, and a first needle measuring point and a second needle measuring point are respectively set at a first position and a second position on the routing; wherein the device includes: an obtaining unit, used to obtain a first transfer function between the first needle measuring point and the grain pad; the obtaining unit, also used to obtain a second transfer function between the second needle measuring point and the grain pad; the obtaining unit, also used to obtain a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point, respectively; and a processing unit, used to determine a data signal waveform function at the grain pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0006] The disclosed embodiment provides a signal measurement system for a semiconductor device, wherein the semiconductor device includes a die pad, and the system includes: a system on chip (SOC), wherein the system on chip (SOC) sends a data signal of a predetermined frequency to the die pad through a routing; a PCB board; an adapter board, wherein the routing is connected from the system on chip (SOC) to the die pad through the PCB board and the adapter board in sequence, wherein a first needle measuring point and a second needle measuring point are respectively arranged at a first position and a second position of the routing, and the first needle measuring point and the second needle measuring point are both arranged on the adapter board; a signal measurement device, which is used to obtain a first transfer function between the first needle measuring point and the die pad and a second transfer function between the second needle measuring point and the die pad; obtain a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point respectively; and obtain a data signal waveform function at the die pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0007] According to another aspect of the present disclosure, a computer device is provided, comprising one or more processors; and a memory configured to store one or more programs, wherein when the one or more programs are executed by the one or more processors, the computer device implements the signal measurement method of the semiconductor device in any embodiment of the present disclosure.

[0008] According to another aspect of the present disclosure, a computer-readable storage medium is provided, which stores a computer program, and the computer program is suitable for being loaded and executed by a processor so that a computer device having a processor executes the signal measurement method of a semiconductor device in any embodiment of the present disclosure.

[0009] According to yet another aspect of the present disclosure, a computer program product is provided. When the computer program is executed by a processor, the signal measuring method of the semiconductor device in any one of the embodiments of the present disclosure is implemented.

[0010] The signal measurement method of the semiconductor device provided by some embodiments of the present disclosure obtains the first transfer function and the second transfer function between the first needle measuring point and the second needle measuring point on the routing line and the grain pad on the semiconductor device, and obtains the first signal waveform function of the first needle measuring point and the second signal waveform function of the second needle measuring point respectively. Therefore, regardless of whether the load impedance of the grain pad matches the impedance of the routing line at this time, the data signal waveform function of the predetermined frequency at the grain pad can be accurately determined. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] Figure 1 A schematic diagram of a signal measurement system for a semiconductor device in the related art is shown.

[0012] Figure 2 A schematic diagram showing the load impedance of the die pad when matched with the impedance of the trace.

[0013] Figure 3 A schematic diagram showing the transfer function when the load impedance of the die pad matches the impedance of the trace.

[0014] Figure 4 A schematic diagram is shown when the load impedance of the die pad does not match the impedance of the trace.

[0015] Figure 5 A schematic diagram showing the transfer function when the load impedance of the die pad does not match the impedance of the trace.

[0016] Figure 6 A flow chart of a signal measurement method for a semiconductor device in an embodiment of the present disclosure is shown.

[0017] Figure 7 A schematic diagram showing a signal measurement method of a semiconductor device in an embodiment of the present disclosure is shown.

[0018] Figure 8 A schematic diagram of a first transfer function and a second transfer function in an embodiment of the present disclosure is shown.

[0019] Fig. 9 A schematic diagram of a signal measuring device of a semiconductor device in an embodiment of the present disclosure is shown.

[0020] Fig.10 A schematic diagram of the structure of a computer device in an embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0021] Example embodiments will now be described more fully with reference to the accompanying drawings. However, example embodiments can be implemented in a variety of forms and should not be construed as limited to the examples set forth herein; rather, these embodiments are provided so that the disclosure will be more comprehensive and complete and to fully convey the concepts of the example embodiments to those skilled in the art. The described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments.

[0022] Figure 1 FIG. 1 is a schematic diagram of a signal measurement system for a semiconductor device in the related art. Figure 1As shown, the semiconductor device 100 has a die, and each die has a pad, which is called a die pad (die pad) 110. When testing the data signal at the die pad 110 (for example, a high-speed signal of a predetermined frequency f, the value of the predetermined frequency f can be set according to actual measurement requirements, and the present disclosure does not limit it), a PCB board 500 and an interposer 200 are set between the semiconductor device 100 and the system on chip SOC 400. This is because the die pad 110 in the semiconductor device 100 is packaged, and the die pad 110 cannot be directly probed. Although the semiconductor device 100 has solder balls 120 leaking out, on the one hand, the solder balls 120 are not the die pads 110, and on the other hand, the probe cannot be inserted into the solder balls 120. Therefore, it is necessary to use the probing point 210 on the interposer 200 for testing. There may be at least one routing line 300, and the number of routing lines 300 depends on the number of die pads 110 to be measured, that is, the routing lines 300 correspond to the die pads 110 one by one. The following is an example of one routing line and one corresponding die pad. The routing line 300 starts from the system on chip SOC400, passes through the PCB board 500, the adapter board 200 in sequence, and then connects to the corresponding die pad 110. Figure 1 In the embodiment, the system on chip SOC 400 and the PCB board 500 are electrically connected via the solder balls 410 , and the adapter board 200 and the PCB board 500 are electrically connected via the solder balls 220 .

[0023] In order to measure the waveform of the high-speed signal at the die pad 110, the related art adopts a de-embedding method to measure at a certain point of the channel (line or track line) 300 (for example, at the probe point 210 on the line 300) to obtain the signal waveform function V tp (f), where f is the predetermined frequency of the high-speed signal to be measured. The transfer function H(f) between the probe point 210 and the die pad 110 connected to the trace 300 can be obtained by software simulation: sim . Transfer function H(f) sim Satisfies the following formula:

[0024]

[0025] In the above formula (1), V die (f) sim represents the signal waveform function at the die pad 110 obtained by software simulation, V tp (f) sim represents the signal waveform function at the needle measuring point 210 obtained by software simulation, V die(f) represents the data signal waveform function at the die pad 110 obtained by the de-embedding method, V tp (f) shows the signal waveform function at the probe point 210 obtained by using the probe measurement.

[0026] According to the above formula (1), we can know that when obtaining the signal waveform function V tp (f) and the transfer function H(f) sim Afterwards, it can be obtained according to the following formula:

[0027] V die (f) = H(f) sim ·V tp (f) (2)

[0028] Figure 2 Figure 1 shows a schematic diagram of the load impedance of the die pad matching the impedance of the trace. Figure 2 As shown, Rx represents the die pad, and Tx represents the system on chip SOC. When the load impedance of the die pad matches the impedance of the corresponding routing line, for example, assuming that the load impedance and the routing line impedance are both 50 ohms, Rx will not reflect the data signal sent by Tx, and the amplitude of the signal on the routing line (or transmission line) remains basically stable and the absolute value of the amplitude is large. Therefore, the test accuracy of the data signal waveform function at the die pad obtained by using the above formula (2) is high. Figure 2 The two black lines symmetrical on both sides of the dotted line represent the maximum and minimum amplitudes of the data signal sent by the system on chip SOC. Figure 2 It can be seen that it is fixed.

[0029] Figure 3 Figure 1 shows a schematic diagram of the transfer function when the load impedance of the die pad matches the impedance of the trace. Figure 3 As shown in the above formula (1), when the load impedance of the die pad matches the impedance of the trace, due to the V tp (f) sim or V tp The amplitude (here refers to the absolute value of the amplitude) of (f) is large and fixed, so the transfer function H(f) sim The amplitude at each frequency is very small and will not affect V die The measurement error of (f) is amplified, so the test accuracy is higher. Figure 3 The horizontal axis represents the frequency f in GHz, and the vertical axis represents the amplitude of the transfer function.

[0030] Figure 4 Figure 1 shows a schematic diagram of a situation where the load impedance of the die pad does not match the impedance of the trace. Figure 4As shown, when the load impedance of the grain pad does not match (mismatch) the impedance of the routing, for example, the grain pad is assumed to be open, then the load impedance of the grain pad is infinite, and the impedance of the routing is assumed to be 50 ohms. When there is a mismatch, Rx will reflect the data signal sent by Tx to form a standing wave. At this time, the amplitude of the signal measured at the needle measuring point may be the smallest (0 or close to 0), which will cause the accuracy of the measurement result at the grain pad to decrease, limiting the application scenarios of the measurement method in the related technology.

[0031] Figure 5 Figure 1 shows a schematic diagram of the transfer function when the load impedance of the die pad does not match the impedance of the trace. Figure 5 As shown in the figure, when the impedance is mismatched, the signal amplitude at the probe point may be the smallest. According to the above formula (1), the amplitude of the transfer function will be very large, for example, Figure 5 The peak point of the amplitude of the transfer function shown in , the error reflected to the load end of the die pad will be amplified, resulting in inaccurate test results at the die pad. Figure 5 The peak in the figure can be related to the distance from the probe point to the load of the die pad, from low to high, for example, it can be …, where λ is the wavelength of the data signal, which is the reciprocal of the frequency f.

[0032] Figure 6 A flow chart of a signal measurement method for a semiconductor device in an embodiment of the present disclosure is shown.

[0033] The semiconductor device in the embodiments of the present disclosure may be any semiconductor device. In the following embodiments, the semiconductor device is taken as a DRAM (Dynamic Random Access Memory) or SDRAM (synchronous dynamic random-access memory) in a semiconductor memory device for illustration, but the present disclosure does not limit the type of semiconductor device.

[0034] In an embodiment of the present disclosure, the semiconductor device includes one or more crystal grains, and each crystal grain may include one or more crystal grain pads. Each crystal grain pad may receive a data signal of a predetermined frequency from a system on chip SOC through a corresponding routing. The system on chip SOC may be any electronic device capable of sending a data signal of a predetermined frequency, but the present disclosure is not limited thereto.

[0035] The data signal in the embodiment of the present disclosure may include a DQ (data) and / or CA (command and address) signal sent by the system on chip SOC to the die pad, and the DQ signal and CA signal are high-speed signals.

[0036] In the embodiment of the present disclosure, any one of the plurality of die pads in the semiconductor device is used as an example to illustrate the signal measurement method. Each die pad corresponds to a routing line, through which a data signal of a predetermined frequency is received from the system on chip SOC. The predetermined frequency can be set according to actual test requirements, and the present disclosure does not limit its value.

[0037] In the disclosed embodiment, multiple (two or more) needle measuring points can be set on each line according to the relationship between the position of the needle measuring point and the magnitude of the peak point error. In the following embodiment, the first needle measuring point and the second needle measuring point are respectively set at the first position and the second position on each line for illustration.

[0038] The method provided in the embodiments of the present disclosure may be executed by any computer device, such as a system on a chip (SOC) or a signal measuring device, and the present disclosure does not limit this.

[0039] like Figure 6 As shown, the signal measurement method of the semiconductor device provided by the embodiment of the present disclosure may include the following steps.

[0040] In S610 , a first transfer function between a first needle test point and a die pad is obtained.

[0041] In the embodiment of the present disclosure, a transfer function between a first needle measuring point on a trace and a die pad connected to the trace can be obtained by software simulation. For the sake of distinction, it is referred to as the first transfer function H1(f) sim .

[0042] First transfer function H1(f) sim Satisfies the following formula:

[0043]

[0044] In the above formula (3), V die1 (f) sim represents the signal waveform function at the first needle measuring point obtained by software simulation, V tp1 (f) sim represents the signal waveform function at the first needle measuring point obtained by software simulation, V die1 (f) represents the data signal waveform function at the die pad obtained by using the first needle measurement point, V tp1(f) represents the first signal waveform function at the first needle measuring point obtained by measuring with a probe. It is understandable that the first signal waveform at the first probe point can be obtained by first inserting the probe into the first needle measuring point and measuring with an oscilloscope electrically connected to the probe, wherein the abscissa of the first signal waveform is time t and the ordinate is the voltage amplitude of the first signal. Then, the first signal waveform is converted, and the time t is converted into the frequency f to obtain the first signal waveform function, that is, the first signal waveform function is a function of the voltage amplitude of the first signal at each frequency point.

[0045] According to the above formula (3), after obtaining the first signal waveform function V tp1 (f) and the first transfer function H1(f) sim Afterwards, it can be obtained according to the following formula:

[0046] V die1 (f) = H1(f) sim ·V tp1 (f) (4)

[0047] In S620 , a second transfer function between the second needle measuring point and the die pad is obtained.

[0048] In the embodiment of the present disclosure, a transfer function between a second needle measuring point on a trace and a die pad connected to the trace can be obtained by software simulation. For the sake of distinction, it is referred to as the second transfer function H2(f) sim .

[0049] Second transfer function H2(f) sim Satisfies the following formula:

[0050]

[0051] In the above formula (5), V die2 (f) sim represents the signal waveform function at the second needle measuring point obtained by software simulation, V tp2 (f) sim represents the signal waveform function at the second needle measuring point obtained by software simulation, V die2 (f) represents the data signal waveform function at the die pad obtained by the second needle measurement point, V tp2 (f) represents the second signal waveform function at the second needle measuring point obtained by using the probe measurement.

[0052] According to the above formula (5), when obtaining the second signal waveform function V tp2 (f) and the second transfer function H2(f) sim Afterwards, it can be obtained according to the following formula:

[0053] V die2(f) = H2(f) sim ·V tp2 (f) (6)

[0054] In S630, a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point are obtained respectively.

[0055] In the embodiment of the present disclosure, the probe on the signal measuring device can be inserted into the first needle measuring point and the second needle measuring point respectively to test the waveform signal function corresponding to the first signal waveform function of the first needle measuring point and the second signal waveform function of the second needle measuring point respectively.

[0056] It should be noted that Figure 6 In the embodiment, the execution order of S610, S620 and S630 is not limited. For example, S630 may be executed first, then S610 and S630, or S620 may be executed first, then S610, and then S630. The present disclosure does not limit this.

[0057] In S640, a data signal waveform function at the die pad is determined according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function, and a predetermined frequency.

[0058] The signal measurement method of the semiconductor device provided by the embodiment of the present disclosure respectively tests the first needle measuring point and the second needle measuring point on the routing line, thereby respectively obtaining the first signal waveform function of the first needle measuring point and the second signal waveform function of the second needle measuring point, and obtaining the first transfer function and the second transfer function between the grain pads on the semiconductor device, thereby accurately determining the data signal waveform function of the predetermined frequency at the grain pad regardless of whether the load impedance of the grain pad matches the impedance of the routing line at this time.

[0059] In an exemplary embodiment, a data signal waveform function at a grain pad is determined based on a first signal waveform function, a second signal waveform function, a first transfer function, a second transfer function and a predetermined frequency, including: when the load impedance of the grain pad does not match the impedance of the routing, the data signal waveform function is obtained based on the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0060] In an exemplary embodiment, the method further includes: when the load impedance of the die pad matches the impedance of the trace, determining the data signal waveform function according to the first signal waveform function and the first transfer function; or determining the data signal waveform function according to the second signal waveform function and the second transfer function.

[0061] In the embodiments of the present disclosure, when the load impedance of the grain pad does not match the impedance of the corresponding routing line, it can be determined in combination with the predetermined frequency of the data signal whether to use the first signal waveform function and the first transfer function to obtain the data signal waveform function at the grain pad, or to use the second signal waveform function and the second transfer function to obtain the data signal waveform function at the grain pad. When the load impedance of the grain pad matches the impedance of the corresponding routing line, only one needle measuring point on the routing line can be selected, such as the first needle measuring point or the second needle measuring point. At this time, the data signal waveform function at the grain pad can be obtained by using the first signal waveform function and the first transfer function, or by using the second signal waveform function and the second transfer function. That is, through the method provided in the embodiments of the present disclosure, regardless of whether the load impedance of the grain pad matches the impedance of the corresponding routing line, the data signal waveform function at the grain pad can be accurately measured.

[0062] In the embodiment of the present disclosure, the impedance of the routing may include the package impedance of the system on chip SOC, the impedance of the PCB board, the impedance of the adapter board, and the package impedance of the semiconductor device. The package impedance of the system on chip SOC, the impedance of the PCB board, the impedance of the adapter board, and the package impedance of the semiconductor device can be designed to be matched. The impedance of the routing can be designed to be 40 ohms or 50 ohms.

[0063] In the disclosed embodiment, the load of the die pad may refer to the resistor and capacitor connected to the die pad of the semiconductor device. The load impedance of the die pad may be set according to the actual circuit conditions and needs. For example, ODT (on-die termination, terminal resistance) = 240 ohms may be set, or the die pad may be left open, in which case the load impedance of the die pad is infinite. Therefore, the load impedance of the die pad may not match the impedance of the trace.

[0064] In the embodiment of the present disclosure, the PCB (Printed Circuit Board) board may also be referred to as PCBMotherBoard. However, the present disclosure is not limited thereto. For example, it may also be an FPC (Flexible Printed Circuit) board.

[0065] In an exemplary embodiment, a second time for the data signal to be transmitted from the second location to the die pad is twice as long as a first time for the data signal to be transmitted from the first location to the die pad.

[0066] In an exemplary embodiment, when the test environments of the first needle test point and the second needle test point are the same, the second distance between the second position and the die pad is twice the first distance between the first position and the die pad.

[0067] In the disclosed embodiment, the first distance between the first needle measuring point and the corresponding die pad refers to the length of the line from the first needle measuring point to the corresponding die pad on the line. The second distance between the second needle measuring point and the corresponding die pad refers to the length of the line from the second needle measuring point to the corresponding die pad on the line.

[0068] In the embodiment of the present disclosure, when the test environment of the first needle test point and the second needle test point is different, for example, the material between the first needle test point and the second needle test point is different from the material between the first needle test point and the die pad, resulting in different transmission speeds of the data signal in different sections of the routing. At this time, the second time t2 of the data signal sent by the system on chip SOC from the second needle test point to the corresponding die pad is twice the first time t1 of the data signal from the first needle test point to the corresponding die pad, that is, t2=2t1. When the test environment of the first needle test point and the second needle test point is the same, the transmission speed of the data signal from the second needle test point to the corresponding die pad is the same as the transmission speed of the data signal from the first needle test point to the die pad. Therefore, at this time, the second distance L2 between the second needle test point and the corresponding die pad can be set to be equal to twice the first distance L1 between the first needle test point and the die pad, that is, L2=2L1, for example, L1=L, then L2=2L. That is, through the method provided by the embodiment of the present disclosure, regardless of whether the test environment of the first needle test point and the second needle test point is the same, the first needle test point and the second needle test point can be set to appropriate positions so that the data signal waveform function at the die pad can be accurately obtained.

[0069] In an exemplary embodiment, a trace is connected from a system on chip SOC to a die pad through a PCB board and an adapter board in sequence, and a first needle test point and a second needle test point are both arranged on the adapter board.

[0070] In the disclosed embodiment, a semiconductor device such as an SDRAM is disposed on an adapter board, and the orthographic projection area of ​​the SDRAM on the adapter board is smaller than the upper surface area of ​​the adapter board, that is, the upper surface of the adapter board can be divided into two areas, one area is blocked by the orthographic projection of the SDRAM, and the area on the adapter board other than the area blocked by the orthographic projection of the SDRAM can be used to set needle test points of each grain pad. Therefore, the first needle test point and the second needle test point are set in the area of ​​the upper surface of the adapter board that is not blocked by the orthographic projection of the SDRAM. This makes it convenient for the probe to respectively penetrate the first needle test point and the second needle test point to perform waveform detection of the first signal waveform function and the second signal waveform function.

[0071] Figure 7 A schematic diagram showing a signal measurement method of a semiconductor device in an embodiment of the present disclosure is shown.

[0072] like Figure 7As shown, it is assumed that the impedance of the routing is 50 ohms, and the die pad is open, that is, the load impedance of the die pad is infinite, that is, the load impedance of the routing and the die pad is mismatched. According to the actual transmission path of the data signal, that is, the path of the routing, first determine the first needle measuring point (needle measuring point 1) and the second needle measuring point (needle measuring point 2) on the routing. Here, it is assumed that the first needle measuring point corresponds to the minimum amplitude of the data signal, and the second needle measuring point corresponds to the maximum absolute value of the amplitude of the data signal. After determining the positions of the first needle measuring point and the second needle measuring point on the routing, the first distance between the first needle measuring point and the corresponding die pad, and the second distance between the second needle measuring point and the die pad can be determined. Then perform software simulation, and change the frequency of the data signal to obtain the values ​​of the first transfer function and the second transfer function at each frequency. The changed frequency can be within the frequency band of interest (that is, the predetermined frequency range), such as 0-5GHz, but the present disclosure is not limited to this.

[0073] In an exemplary embodiment, a data signal waveform function at a die bonding pad is determined based on a first signal waveform function, a second signal waveform function, a first transfer function, a second transfer function and a predetermined frequency, including: determining a point where the amplitudes of the first transfer function and the second transfer function are equal; dividing a predetermined frequency range into a first frequency interval and a second frequency interval with the amplitude equal point as a boundary, wherein within the first frequency interval, the amplitude of the first transfer function is smaller than the amplitude of the second transfer function; within the second frequency interval, the amplitude of the first transfer function is larger than the amplitude of the second transfer function; if the predetermined frequency is in the first frequency interval, the data signal waveform function at the die bonding pad is obtained based on the first transfer function and the first signal waveform function; if the predetermined frequency is in the second frequency interval, the data signal waveform function at the die bonding pad is obtained based on the second transfer function and the second signal waveform function.

[0074] The signal measurement method of the semiconductor device provided in the embodiment of the present disclosure can divide the predetermined frequency range into a first frequency interval and a second frequency interval according to the comparison of the amplitudes of the first transfer function and the second transfer function. In the first frequency interval, the amplitude of the first transfer function is smaller than the amplitude of the second transfer function. Therefore, if the predetermined frequency of the data signal is within the first frequency interval, the first transfer function is used to obtain the waveform function of the data signal at the grain pad, which can reduce the measurement error as much as possible and improve the test accuracy; if the predetermined frequency of the data signal is within the second frequency interval, the second transfer function is used to obtain the waveform function of the data signal at the grain pad, which can reduce the measurement error as much as possible and improve the test accuracy.

[0075] Combine the following Figure 8 Give an example. Figure 8 FIG. 2 shows a schematic diagram of a first transfer function and a second transfer function in an embodiment of the present disclosure. Figure 8 As shown, based on Figure 7 In the impedance mismatch scenario shown, assuming that the predetermined frequency range is 0-20 GHz, mag(H2) represents the amplitude of the second transfer function, and mag(H1) represents the amplitude of the first transfer function. The intersection point (amplitude equal point) where the amplitudes of the first transfer function and the second transfer function are equal is used as the boundary ( Figure 8 The predetermined frequency range may be divided into one or more first frequency intervals ( Figure 8 ) and one or more second frequency intervals ( Figure 8 In each first frequency interval, the gray mag (H1) is smaller than the black mag (H2). In each second frequency interval, the black mag (H2) is smaller than the gray mag (H1).

[0076] Theoretically, after each measurement of each pin test point, for example, after the first signal waveform function is measured at the first pin test point and after the second signal waveform function is measured at the second pin test point, the data signal waveform function at the load end of the corresponding die pad after de-embedding is the same, that is, V die1 (f) = V die2 (f), so the first needle measuring point and the second needle measuring point can be used to splice the first transfer function and the second transfer function, that is, H1(f) sim ·V tp1 (f) = H2(f) sim ·V tp2 (f), so which transfer function can be used to obtain the data signal waveform function at the die pad when the amplitude of which transfer function is smaller. That is, different frequency intervals are defined according to the size of the corresponding transfer function at each needle test point, and different transfer functions are selected in different frequency intervals to multiply the measurement signal waveform function (such as the first signal waveform function or the second signal waveform function) at the corresponding needle test point to obtain the data signal waveform function at the load of the die pad, thereby maximizing the reduction of measurement errors and improving test accuracy.

[0077] In an exemplary embodiment, a first distance between the first needle point and the die pad is less than a distance threshold.

[0078] In the embodiment of the present disclosure, the first needle measuring point is placed as close as possible to the load end of the corresponding die pad. When the first needle measuring point is closer to the load end of the corresponding die pad, for example Figure 8As shown, the peak points of the first transfer function and the second transfer function are sparser within the predetermined frequency range. Conversely, when the distance between the first needle test point and the corresponding die pad is farther, the peak points of the first transfer function and the second transfer function are denser within the predetermined frequency range. When the peak points are sparser, there are more low amplitudes of the first transfer function and the second transfer function within the predetermined frequency range. Therefore, the test accuracy of the data signal waveform function at the die pad is higher. For example, when the distance between the first needle test point and the corresponding die pad is relatively close, the first peak point of the first transfer function is at 6GHz; when the distance between the first needle test point and the corresponding die pad is relatively far, the first peak point of the first transfer function is at 3.3GHz.

[0079] In the disclosed embodiment, since there are multiple die pads in the semiconductor device, there are correspondingly multiple routing lines, each routing line has a corresponding first needle measuring point, and the first needle measuring point cannot be blocked by the orthographic projection of the semiconductor device. Therefore, on the basis of considering the actual path of the routing line and bypassing other routing lines, the first needle measuring point is made as close as possible to the die pad to be measured, that is, the value of the distance threshold depends on multiple factors such as the number of die pads on the semiconductor device, the layout of the die pads, the number of routing lines, the layout of the routing lines, the area of ​​the adapter board, the orthographic projection area of ​​the semiconductor device, etc.

[0080] The method provided in the embodiment of the present disclosure is a new de-embedding method for measuring data signal waveforms, which uses a multi-pin measurement point mixed de-embedding method to measure the waveform of the data signal at the die pad, and can be applied to semiconductor devices such as semiconductor memory devices, involving signal integrity.

[0081] Furthermore, the embodiment of the present disclosure also provides a signal measurement system for a semiconductor device, wherein the semiconductor device includes a die pad. The system provided by the embodiment of the present disclosure includes: a system on chip SOC, wherein the system on chip SOC sends a data signal of a predetermined frequency to the die pad through a trace; a PCB board; an adapter board, wherein the trace is connected from the system on chip SOC to the die pad through the PCB board and the adapter board in sequence, wherein a first needle measuring point and a second needle measuring point are respectively provided at the first position and the second position of the trace, and the first needle measuring point and the second needle measuring point are both provided on the adapter board; a signal measurement device, which is used to obtain a first transfer function between the first needle measuring point and the die pad and a second transfer function between the second needle measuring point and the die pad; respectively obtain a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point; and obtain a data signal waveform function at the die pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0082] For other contents of the signal measurement system for a semiconductor device provided by the embodiments of the present disclosure, reference may be made to the other embodiments described above.

[0083] Fig. 9 A schematic diagram of a signal measuring device for a semiconductor device in an embodiment of the present disclosure is shown. The semiconductor device includes a die pad, the die pad receives a data signal of a predetermined frequency through a wiring, and a first needle measuring point and a second needle measuring point are respectively set at a first position and a second position on the wiring. Fig. 9 As shown, the signal measuring device 900 of a semiconductor device provided by the embodiment of the present disclosure may include an obtaining unit 910 and a processing unit 920 .

[0084] The obtaining unit 910 is used to obtain a first transfer function between a first needle measuring point and a die pad.

[0085] The obtaining unit 910 is further configured to obtain a second transfer function between the second needle measuring point and the die pad.

[0086] The obtaining unit 910 is further configured to obtain a first signal waveform function of a first needle measuring point and a second signal waveform function of a second needle measuring point respectively.

[0087] The processing unit 920 is used to determine the data signal waveform function at the die bonding pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

[0088] In an exemplary embodiment, the processing unit 920 is also used to: determine the point where the amplitudes of the first transfer function and the second transfer function are equal; divide the predetermined frequency range into a first frequency interval and a second frequency interval with the amplitude equal point as the boundary, wherein within the first frequency interval, the amplitude of the first transfer function is smaller than the amplitude of the second transfer function; within the second frequency interval, the amplitude of the first transfer function is larger than the amplitude of the second transfer function; if the predetermined frequency is in the first frequency interval, the data signal waveform function at the grain pad is obtained according to the first transfer function and the first signal waveform function; if the predetermined frequency is in the second frequency interval, the data signal waveform function at the grain pad is obtained according to the second transfer function and the second signal waveform function.

[0089] In an exemplary embodiment, the processing unit 920 is also used to: when the load impedance of the grain pad does not match the impedance of the routing, obtain a data signal waveform function based on the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and a predetermined frequency; when the load impedance of the grain pad matches the impedance of the routing, determine the data signal waveform function based on the first signal waveform function and the first transfer function; or, determine the data signal waveform function based on the second signal waveform function and the second transfer function.

[0090] In an exemplary embodiment, a second time for the data signal to be transmitted from the second location to the die pad is twice as long as a first time for the data signal to be transmitted from the first location to the die pad.

[0091] In an exemplary embodiment, when the test environments of the first needle test point and the second needle test point are the same, the second distance between the second position and the die pad is twice the first distance between the first position and the die pad.

[0092] In an exemplary embodiment, a trace is connected from a system on chip SOC to a die pad through a PCB board and an adapter board in sequence, and a first needle test point and a second needle test point are both arranged on the adapter board.

[0093] In an exemplary embodiment, a first distance between the first needle point and the die pad is less than a distance threshold.

[0094] For other contents of the signal measuring device for a semiconductor device provided by the embodiments of the present disclosure, reference may be made to the other embodiments described above.

[0095] See also Fig.10 , Fig.10 Schematic diagram of a computer device provided by an embodiment of the present disclosure. Fig.10 As shown, the computer device in the embodiment of the present disclosure may include: one or more processors 1001, a memory 1002, and an input-output interface 1003. The processor 1001, the memory 1002, and the input-output interface 1003 are connected via a bus 1004. The memory 1002 is used to store a computer program, which includes program instructions. The input-output interface 1003 is used to receive data and output data, such as for data interaction between a host machine and a computer device, or for data interaction between various virtual machines in a host machine; the processor 1001 is used to execute the program instructions stored in the memory 1002.

[0096] Among them, the processor 1001 can perform the following operations: obtain a first transfer function between a first needle measuring point and a grain pad; obtain a second transfer function between a second needle measuring point and a grain pad; obtain a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point respectively; determine a data signal waveform function at the grain pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and a predetermined frequency.

[0097] The memory 1002 may include a read-only memory and a random access memory, and provide instructions and data to the processor 1001 and the input / output interface 1003. A portion of the memory 1002 may also include a non-volatile random access memory. In a specific implementation, the computer device may execute the implementation methods provided by the various steps in any of the above method embodiments through its built-in functional modules. For details, please refer to the implementation methods provided by the various steps in the figure shown in the above method embodiments, which will not be repeated here.

[0098] The embodiments of the present disclosure provide a computer device, including a processor, an input / output interface, and a memory. The processor obtains a computer program in the memory to execute each step of the method shown in any of the above embodiments.

[0099] The embodiment of the present disclosure also provides a computer-readable storage medium, which stores a computer program, and the computer-readable storage medium stores a program product capable of implementing the above method of the present disclosure. The computer program is suitable for being loaded by the processor and executing the signal measurement method of the semiconductor device provided in each step of any of the above embodiments.

[0100] The present disclosure also provides a computer program product or a computer program, which includes a computer instruction stored in a computer-readable storage medium. A processor of a computer device reads the computer instruction from the computer-readable storage medium, and the processor executes the computer instruction, so that the computer device executes the method provided in any of the above-mentioned optional modes.

Claims

1. A signal measurement method for a semiconductor device, characterized in that: The semiconductor device includes a die pad, the die pad receives a data signal of a predetermined frequency through a routing line, and a first needle test point and a second needle test point are respectively set at a first position and a second position on the routing line; wherein the method includes: Obtaining a first transfer function between the first needle measuring point and the die pad; Obtaining a second transfer function between the second needle measuring point and the die pad; respectively obtaining a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point; A data signal waveform function at the die pad is determined according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function, and the predetermined frequency.

2. The method according to claim 1, characterized in that Determining the data signal waveform function at the die pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency includes: determining a point at which the magnitudes of the first transfer function and the second transfer function are equal; The predetermined frequency range is divided into a first frequency interval and a second frequency interval with the amplitude equal point as a boundary, wherein in the first frequency interval, the amplitude of the first transfer function is smaller than the amplitude of the second transfer function; and in the second frequency interval, the amplitude of the first transfer function is larger than the amplitude of the second transfer function; If the predetermined frequency is within the first frequency interval, obtaining the data signal waveform function at the die bonding pad according to the first transfer function and the first signal waveform function; If the predetermined frequency is in the second frequency range, the data signal waveform function at the die pad is obtained according to the second transfer function and the second signal waveform function.

3. The method according to claim 1, characterized in that Determining the data signal waveform function at the die pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency includes: When the load impedance of the die pad does not match the impedance of the routing line, obtaining the data signal waveform function according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency; Wherein, the method further comprises: When the load impedance of the die pad matches the impedance of the routing line, the data signal waveform function is determined according to the first signal waveform function and the first transfer function; or, the data signal waveform function is determined according to the second signal waveform function and the second transfer function.

4. The method according to claim 1, characterized in that A second time for the data signal to be transmitted from the second position to the die pad is twice as long as a first time for the data signal to be transmitted from the first position to the die pad.

5. The method according to claim 1, characterized in that When the test environments of the first needle test point and the second needle test point are the same, the second distance between the second position and the die pad is twice the first distance between the first position and the die pad.

6. The method according to claim 1, characterized in that The wiring is connected from the system on chip SOC to the die pad through the PCB board and the adapter board in sequence, and the first needle test point and the second needle test point are both arranged on the adapter board.

7. The method according to claim 6, characterized in that A first distance between the first needle test point and the die pad is less than a distance threshold.

8. A signal measurement system for a semiconductor device, characterized in that: The semiconductor device includes a die pad, and the system includes: A system on chip (SOC), wherein the system on chip (SOC) sends a data signal of a predetermined frequency to the die pad via a wiring; PCB board; An adapter board, wherein the wiring is connected to the die pad from the system on chip SOC through the PCB board and the adapter board in sequence, and a first needle test point and a second needle test point are respectively arranged at a first position and a second position of the wiring, and the first needle test point and the second needle test point are both arranged on the adapter board; A signal measuring device is used to obtain a first transfer function between the first needle measuring point and the die bonding pad and a second transfer function between the second needle measuring point and the die bonding pad; respectively obtain a first signal waveform function of the first needle measuring point and a second signal waveform function of the second needle measuring point; and obtain a data signal waveform function at the die bonding pad according to the first signal waveform function, the second signal waveform function, the first transfer function, the second transfer function and the predetermined frequency.

9. A computer device, characterized in that: include: one or more processors; The memory is configured to store one or more programs, and when the one or more programs are executed by the one or more processors, the computer device implements the method according to any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed on a computer, the computer is caused to execute the method according to any one of claims 1 to 7.

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