Light emitting diode and light emitting device

Abstract

The invention provides a light emitting diode and a light emitting device. The light-emitting epitaxial layer comprises a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer which are stacked in sequence, the light-emitting epitaxial layer comprises a peripheral part and an inner side area surrounded by the peripheral part in a top view, the peripheral part is exposed out of a first surface of the first conductive type semiconductor layer, and the inner side area is exposed out of a second surface of the second conductive type semiconductor layer; the second conductive type semiconductor layer is arranged in an inner side area surrounded by the peripheral part; a conductive connection portion disposed on the outer peripheral portion and contacting the first conductive type semiconductor layer; the insulating layer is formed on the light-emitting epitaxial layer and is provided with a first opening part which exposes a part of the surface of the conductive connecting part; the first contact electrode is formed on the first conductive type semiconductor layer and is in contact with the surface of the conductive connecting part; the second contact electrode is formed on the second conductive type semiconductor layer; a first pad electrode formed over the first contact electrode; a second pad electrode is formed over the second contact electrode.

Description

Technical Field

[0001] The present invention belongs to the technical field of semiconductor devices and packaging, and in particular, relates to a light emitting diode and a light emitting device. Background Art

[0002] Semiconductor light-emitting elements, namely light-emitting diodes (LEDs), have high conversion efficiency and are widely used in lighting, display screens, automobiles, communications and other fields.

[0003] At present, the structure of LED chips usually includes a substrate and an epitaxial structure, as well as a metal reflective layer and an electrode connection layer arranged on the side of the epitaxial structure away from the substrate. Among them, the electrode connection layer is separated from the metal reflective layer by an insulating layer, and is electrically connected to the metal reflective layer only through an opening arranged at a preset position of the insulating layer. The surface of the electrode connection layer is covered by another insulating layer, and the preset opening of the insulating layer exposes part of the electrode connection layer to be electrically connected to the subsequent pad electrode. In order to achieve a good current diffusion effect and reduce the operating voltage of the LED, the N semiconductor layer is usually exposed at the epitaxial opening at the edge of the chip, and the N electrode connection layer contacts the N semiconductor layer through the opening to form an N-ohmic contact layer. However, in the process of the existing process, it is inevitable to introduce defects (such as impurities and foreign matter in the process chamber, etc.), which will cause cracks or perforations in the insulating layer above the N-ohmic contact layer at the edge of the chip, resulting in the phenomenon of local short circuit due to the connection between the upper and lower electrode connection layers with different electrical polarities and the epitaxial structure. The short circuit phenomenon caused by the damage of the edge insulating layer can be prevented by eliminating the design of the edge N-ohm contact layer. However, after eliminating the edge N-ohm contact layer, the current diffusion effect of the chip becomes weaker, resulting in the problem of increased operating voltage. Summary of the invention

[0004] The object of the present invention is to provide a light emitting diode and a light emitting device to solve the problems existing in the above-mentioned background technology.

[0005] In a first aspect, the present application provides a light emitting diode, comprising:

[0006] A light-emitting epitaxial layer, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence, wherein in a top view, the light-emitting epitaxial layer comprises an outer peripheral portion and an inner region surrounded by the outer peripheral portion, the outer peripheral portion exposes a first surface of the first conductive type semiconductor layer, and the second conductive type semiconductor layer is arranged in the inner region surrounded by the outer peripheral portion;

[0007] A conductive connection portion, disposed on the peripheral portion and contacting the first conductive type semiconductor layer;

[0008] An insulating layer, formed on the light-emitting epitaxial layer, wherein the insulating layer has a first opening portion exposing a portion of a surface of the conductive connecting portion;

[0009] A first contact electrode is formed on the first conductive type semiconductor layer and contacts the surface of the conductive connection portion through the first opening;

[0010] a second contact electrode formed on the second conductive type semiconductor layer;

[0011] A first pad electrode is formed on the first contact electrode and electrically connected to the first conductive type semiconductor layer; and a second pad electrode is formed on the second contact electrode and electrically connected to the second conductive type semiconductor layer.

[0012] In a second aspect, the present application provides a light-emitting device, which includes the above-mentioned light-emitting diode.

[0013] Compared with the prior art, the beneficial effects of the present invention include at least:

[0014] The first pad electrode can conduct current to the first conductive type semiconductor layer on the outer periphery of the first side through the first contact electrode formed on the outer periphery of the first side, while the first contact electrode is not formed on the outer periphery of the second side. The present application sets a conductive connection portion so that the conductive connection portion in contact with the first contact electrode portion conducts the current of the first pad electrode from the first side to the second side, thereby improving the current diffusion of the chip and reducing the operating voltage. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0016] Figure 1 It is a schematic diagram of the cross-sectional structure of a light emitting diode in the prior art;

[0017] Figure 2 is a schematic diagram of a top view of the structure of a light emitting diode according to the first embodiment of the present invention;

[0018] Figure 2a for Figure 2 A partial enlarged view of the dotted box;

[0019] Figure 3 This is a schematic diagram of the top view of the light-emitting epitaxial layer of the first embodiment of the present invention;

[0020] Figure 4 A schematic diagram of the position of the conductive connection portion of the first embodiment of the present invention;

[0021] Figures 5 to 7 For along Figure 2 Schematic diagram of the cross-section structure taken along the middle section line AA;

[0022] Figure 5 The conductive connection portion is located on the first surface of the peripheral portion;

[0023] Figure 6 The conductive connection portion is located on the first surface and the middle inclined surface of the outer peripheral portion;

[0024] Figure 7 The conductive connection part is located on the first surface of the peripheral part, the middle inclined surface and the lower terrace surface;

[0025] Figure 8 FIG. 1 is a schematic diagram of a top view of the structure of a light emitting device according to a second embodiment of the present invention.

[0026] Reference numerals:

[0027] 21 first contact electrode; 21a first part; 22 first pad electrode; 11 second contact electrode; 12 second pad electrode; 101 substrate; 102 light emitting epitaxial layer; 102a first conductive type semiconductor layer; 102a1 peripheral portion; S1 first surface; S2 middle inclined surface; S3 lower terrace; 102a2 inner area; 102b active layer; 102c second conductive type semiconductor layer; 13 conductive connecting portion; 13a1 first conductive segment; 13a2 second conductive segment; 13b1 third conductive segment; 13b2 fourth conductive segment; 13b3 fifth conductive segment; 104 first insulating layer; 105 metal reflective layer; 106 second insulating layer; 107 third insulating layer; X first direction; Y second direction; d1 first distance; 300 metal stack; 410 insulating layer; 610 first connecting electrode; 620 second connecting electrode. DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solution and advantages of the embodiments of the present application clearer, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are part of the embodiments of the present application, rather than all the embodiments. The components of the embodiments of the present application described and shown in the drawings here can be arranged and designed in various different configurations.

[0029] Therefore, the following detailed description of the embodiments of the present application provided in the accompanying drawings is not intended to limit the scope of the present application for which protection is sought, but merely represents selected embodiments of the present application. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in the field without creative work are within the scope of protection of the present application.

[0030] The present application provides a light emitting diode, comprising:

[0031] A light-emitting epitaxial layer, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence, wherein in a top view, the light-emitting epitaxial layer comprises an outer peripheral portion and an inner region surrounded by the outer peripheral portion, the outer peripheral portion exposes a first surface of the first conductive type semiconductor layer, and the second conductive type semiconductor layer is arranged in the inner region surrounded by the outer peripheral portion;

[0032] A conductive connection portion, disposed on the peripheral portion and contacting the first conductive type semiconductor layer;

[0033] An insulating layer, formed on the light-emitting epitaxial layer, wherein the insulating layer has a first opening portion exposing a portion of a surface of the conductive connecting portion;

[0034] A first contact electrode is formed on the first conductive type semiconductor layer and contacts the surface of the conductive connection portion through the first opening;

[0035] a second contact electrode formed on the second conductive type semiconductor layer;

[0036] A first pad electrode is formed on the first contact electrode and electrically connected to the first conductive type semiconductor layer; and a second pad electrode is formed on the second contact electrode and electrically connected to the second conductive type semiconductor layer.

[0037] Optionally, the conductive connection portion is electrically insulated from the second contact electrode.

[0038] Optionally, the light-emitting diode has four sides, which are defined as a first side, a second side, a third side and a fourth side in a circumferential direction; the light-emitting diode includes a virtual center line, which is parallel to the first side and located in the middle position between the first side and the third side, and the first pad electrode and the second pad electrode are located on both sides of the virtual center line.

[0039] Optionally, the light-emitting diode is divided into a first side and a second side by the virtual center line, the first pad electrode is located on the first side, the second pad electrode is located on the second side, and the peripheral projection area of ​​the conductive connection portion on the first side is smaller than the peripheral projection area of ​​the conductive connection portion on the second side.

[0040] Optionally, the first edge extends along a first direction, the first contact electrode includes a first portion formed on the peripheral portion, and a projection of the first portion in the first direction does not overlap with a projection of the second pad electrode in the first direction.

[0041] Optionally, a projection of the conductive connection portion in the first direction overlaps with a projection of the first pad electrode in the first direction, and a projection of the conductive connection portion in the first direction overlaps with a projection of the second pad electrode in the first direction.

[0042] Optionally, a projection of the conductive connection portion in the stacking direction of the light-emitting epitaxial layer has an overlapping area with the first contact electrode, and a projection of the conductive connection portion in the stacking direction of the light-emitting epitaxial layer has no overlapping area with the second contact electrode.

[0043] Optionally, the conductive connection portion includes a first conductive segment and / or a second conductive segment adjacent to the first pad electrode, a projection of the first conductive segment on the periphery and a projection of the first contact electrode on the periphery having an overlapping area; a projection of the second conductive segment on the periphery and a projection of the first contact electrode on the periphery having an overlapping area; and a portion on the upper surface of the conductive connection portion that is connected to the first contact electrode is arranged on the upper surface of the first conductive segment and / or the second conductive segment.

[0044] Optionally, the conductive connecting portion is a strip-shaped structure, a U-shaped structure or a ring-shaped structure.

[0045] Optionally, the inner region includes a first side wall, the first side wall connects the second conductive type semiconductor layer and the first conductive type semiconductor layer, the first side wall has a first distance from the conductive connection portion, and the first distance is greater than 0.

[0046] Optionally, the first distance is greater than 1 micron.

[0047] Optionally, the conductive connection portion is made of indium tin oxide, indium zinc oxide or aluminum-doped zinc oxide.

[0048] Optionally, the insulating layer includes a first insulating layer, the first insulating layer covers the conductive connection portion located on the second side; and the first insulating layer exposes at least a portion of the conductive connection portion located on the first side.

[0049] Optionally, the material of the conductive connection portion includes one or more combinations of metals such as silver, aluminum, titanium, tungsten, and nickel.

[0050] The present application also provides a light-emitting device, comprising the light-emitting diode mentioned above.

[0051] Below Figure 1-Figure 7 The specific implementation structure of the light emitting diode is illustrated as an example:

[0052] Figure 1 The cross-sectional structure diagram of a light emitting diode according to the prior art is shown. The first connection electrode 610 in the light emitting diode is separated from the metal stack 300 only by the insulating layer 410. Once foreign matter or impurities appear in the insulating layer 410 or the second connection electrode 620 during the formation process, defects such as cracks or holes may be generated in the insulating layer 410, so that the first connection electrode 610 is electrically connected to the metal stack 300 through the defects of the insulating layer 410, resulting in a local short circuit in the light emitting diode.

[0053] Embodiment 1

[0054] This embodiment is used to explain the diode of the present invention in detail with reference to the accompanying drawings.

[0055] Reference Figures 2 to 5 The light emitting diode of this embodiment includes a substrate 101, a light emitting epitaxial layer 102, a contact electrode and a pad electrode.

[0056] The substrate 101 includes a first side E1, a second side E2, a third side E3 and a fourth side E4 connected in sequence, and the fourth side E4 is connected to the first side E1 to form a closed loop. The first side E1 and the third side E3 extend along a first direction X, and the second side E2 and the fourth side E4 extend along a second direction Y. The substrate 101 may be a conductive substrate or an insulating substrate, such as a sapphire substrate.

[0057] Reference Figure 5 The light-emitting epitaxial layer 102 includes a first conductive type semiconductor layer 102a, an active layer 102b, and a second conductive type semiconductor layer 102c sequentially formed on the substrate 101. The light-emitting epitaxial layer 102 is used to emit light of a preset wavelength or an emission angle. The active layer 102b includes a multi-quantum well structure (MQW) that can emit a desired wavelength.

[0058] Reference Figure 5 The contact electrode includes a first contact electrode 21 and a second contact electrode 11 provided with an insulating gap. The first contact electrode 21 is formed on the light-emitting epitaxial layer 102 and is electrically connected to the first conductive type semiconductor layer 102a. The second contact electrode 11 is formed on the light-emitting epitaxial layer 102 and is electrically connected to the second conductive type semiconductor layer 102c. The material of the second contact electrode 11 and the second contact electrode 11 can be a metal material, including a combination of one or more of chromium, titanium, nickel, platinum, aluminum, and gold.

[0059] Reference Figure 5The pad electrode includes a first pad electrode 22 and a second pad electrode 12 that are insulated and spaced apart. The first pad electrode 22 is formed on the first contact electrode 21 and is electrically connected to the first contact electrode 21. The second pad electrode 12 is formed on the second contact electrode 11 and is electrically connected to the second contact electrode 11.

[0060] The first pad electrode 22 and the second pad electrode 12 may be formed by evaporation or vapor deposition of a conductive material. The conductive material may be a metal material or an alloy material, such as a combination of one or more of Au, Ag, Al, Cu, Pt, Ti, and Cr. Figure 2 The first pad electrode 22 is adjacent to the second side E2 , the third side E3 , and the fourth side E4 , and the second pad electrode 12 is adjacent to the first side E1 , the second side E2 , and the fourth side E4 .

[0061] Reference Figure 3 The light-emitting epitaxial layer 102 of this embodiment includes an outer peripheral portion 102a1 and an inner region 102a2 surrounded by the outer peripheral portion 102a1.

[0062] Reference Figure 5 The outer peripheral portion 102a1 exposes the first surface S1 of the first conductive type semiconductor layer 102a. The outer peripheral portion 102a1 includes the first surface S1, the middle inclined surface S2 and the lower mesa S3 connected in sequence. The second conductive type semiconductor layer 102c is disposed in the inner region 102a2 surrounded by the outer peripheral portion 102a1.

[0063] Reference Figure 4 , the conductive connection portion 13 is provided on the outer peripheral portion 102a1. Figure 5 At least part of the upper surface of the conductive connection part 13 is electrically connected to the first contact electrode 21, and is electrically connected to the first pad electrode 22 via the first contact electrode 21. The lower surface of the conductive connection part 13 is ohmically connected to the first conductive type semiconductor layer 102a. By providing the conductive connection part 13, the current of the first pad electrode 22 can be conducted and diffused in the conductive connection part 13, thereby improving the current diffusion of the chip and reducing the operating voltage.

[0064] In some embodiments of the present application, the conductive connection portion 13 is electrically insulated from the second contact electrode 11 to prevent the current of the first pad electrode 22 from connecting to the second contact electrode 11 through the conductive connection portion 13, thereby preventing leakage and electrostatic discharge (ESD) abnormalities from occurring.

[0065] Reference Figure 2 , the projection of the conductive connection portion 13 in the stacking direction of the light-emitting epitaxial layer is located within the peripheral portion 102a1.

[0066] Reference Figure 2In some embodiments of the present application, the light emitting diode includes a virtual center line, which is parallel to the first side E1 and located in the middle between the first side E1 and the third side E3, and the first pad electrode 22 and the second pad electrode 12 are located on both sides of the virtual center line.

[0067] Reference Figure 2 In some embodiments of the present application, the light emitting diode includes a virtual center line, and the light emitting diode is divided into a first side and a second side by the virtual center line, the first pad electrode 22 is located on the first side, and the second pad electrode 12 is located on the second side. In some embodiments of the present application, the peripheral projection area of ​​the conductive connection portion 13 on the first side is smaller than the peripheral projection area of ​​the conductive connection portion 13 on the second side, and the current of the first pad electrode 22 is more likely to spread to the conductive connection portion 13 with a larger area close to the second pad electrode 12, thereby improving the current diffusion of the chip and reducing the operating voltage.

[0068] Reference Figure 2 In some embodiments of the present application, the first edge E1 extends along the first direction X, the first contact electrode 21 includes a first portion 21a formed on the peripheral portion 102a1, and the projection of the first portion 21a in the first direction X does not overlap with the projection of the second pad electrode 12 in the first direction X. Even if the insulating layer between the first contact electrode 21 and the second pad electrode 12 is cracked or perforated at the edge of the light-emitting diode, it will not cause a local short circuit in the light-emitting diode.

[0069] Reference Figure 2 The first pad electrode 22 can conduct current to the first conductive type semiconductor layer 102a on the outer periphery of the first side through the first contact electrode 21 formed on the outer periphery of the first side, while the first contact electrode 21 is not formed on the outer periphery of the second side. Therefore, in order to improve the current spreading effect, the projection of the conductive connection part 13 in the first direction X overlaps with the projection of the first pad electrode 22 in the first direction X, and the projection of the conductive connection part 13 in the first direction X overlaps with the projection of the second pad electrode 12 in the first direction X, so that the conductive connection part 13 that is in partial contact with the first contact electrode 21 conducts the current of the first pad electrode 22 from the first side to the second side, thereby improving the current diffusion of the chip and reducing the operating voltage.

[0070] Reference Figure 5In some embodiments of the present application, the projection of the conductive connection portion 13 in the stacking direction of the light-emitting epitaxial layer has an overlapping area with the first contact electrode 21, so that the conductive connection portion 13 contacts the first contact electrode 21 in the stacking direction of the light-emitting epitaxial layer. The projection of the conductive connection portion 13 in the stacking direction of the light-emitting epitaxial layer does not have an overlapping area with the second contact electrode 11, that is, the conductive connection portion 13 is electrically insulated from the second contact electrode 11 in the stacking direction of the light-emitting epitaxial layer, avoiding cracks or perforations in the insulating layer above the N-ohmic contact layer at the edge of the chip in the background technology, resulting in the phenomenon of local short circuit caused by the connection of the upper and lower electrode connection layers with different electrical polarities with the epitaxial structure.

[0071] Reference Figures 5 to 7 , the conductive connection portion 13 may be located at least one of the first surface S1, the middle inclined surface S2, and the lower mesa S3. The inner area 102a2 includes a first sidewall, the first sidewall connects the second conductive type semiconductor layer and the first conductive type semiconductor layer, and the first sidewall has a first distance d1 with the conductive connection portion 13, and the first distance d1 is greater than 0. In an example, the first distance d1 may be greater than 1 micron. If it is less than 1 micron, the conductive connection portion 13 may be connected to the second conductive type semiconductor layer 102c, resulting in leakage and electrostatic discharge (ESD) abnormality problems.

[0072] Reference Figure 2 , the conductive connection part 13 includes a first conductive segment 13a1 and / or a second conductive segment 13a2 across the virtual center line. The projection of the first conductive segment 13a1 on the outer periphery 102a1 and the projection of the first contact electrode 21 on the outer periphery 102a1 have an overlapping area; the projection of the second conductive segment 13a2 on the outer periphery 102a1 and the projection of the first contact electrode 21 on the outer periphery 102a1 have an overlapping area; the portion where the upper surface of the conductive connection part is connected to the first contact electrode 21 is arranged on the upper surface of the first conductive segment 13a1 and / or the second conductive segment 13a2. Through the arrangement of the first conductive segment 13a1 and / or the second conductive segment 13a2, the conductive connection part 13 that is partially in contact with the first contact electrode 21 conducts the current of the first pad electrode 22 from the first side of the light-emitting diode to the second side via the first contact electrode 21.

[0073] The conductive connection portion 13 may start from the ends of the first conductive segment 13a1 and the second conductive segment 13a2 and extend along the first surface S1 in a straight line, a folded line or a curved line. In some embodiments of the present invention, the conductive connection portion 13 is a strip-shaped structure. Figure 2 , the strip structure includes a first conductive segment 13a1 or a second conductive segment 13a2; in some embodiments of the present invention, the conductive connection portion 13 is a U-shaped structure. Figure 2The U-shaped structure includes a first conductive segment 13a1, a second conductive segment 13a2, a third conductive segment 13b1, a fourth conductive segment 13b2 and a fifth conductive segment 13b3. In some embodiments of the present invention, the conductive connecting portion 13 is a ring structure. The conductive connecting portion 13 is formed by sequentially connecting the inner sides of the four sides of the first conductive type semiconductor layer 102a.

[0074] Reference Figure 5 A transparent conductive layer 103, a first insulating layer 104 and a metal reflective layer 105 are sequentially formed on a side of the second conductive type semiconductor layer 102c away from the active layer 102b.

[0075] The transparent conductive layer 103 has good light transmittance, so that the light emitted from the light-emitting epitaxial layer 102 has less energy loss when passing through the transparent conductive layer 103. The transparent conductive layer 103 can be formed by physical vapor deposition or chemical vapor deposition.

[0076] The first insulating layer 104 is formed on the transparent conductive layer 103. The material of the first insulating layer 104 includes silicon dioxide, silicon nitride, etc. Figures 5 to 7 The first insulating layer 104 covers the conductive connection part 13 located on the second side, so that the conductive connection part 13 is electrically insulated from the second contact electrode 11 in the stacking direction of the light-emitting epitaxial layer, avoiding the crack or perforation damage of the insulating layer above the N-ohmic contact layer at the edge of the chip in the background technology, resulting in the connection of the upper and lower electrode connection layers with different electrical polarities with the epitaxial structure and the phenomenon of local short circuit. The first insulating layer 104 exposes at least a part of the conductive connection part 104 located on the first side, so that the conductive connection part 13 is in contact with the first contact electrode 21 in the stacking direction of the light-emitting epitaxial layer.

[0077] The metal reflective layer 105 is disposed above the first insulating layer 104. The first insulating layer 104 and the metal reflective layer 105 together form an all-angle reflector (i.e., an ODR reflective structure), which can further improve the light extraction efficiency of the light-emitting diode. The metal reflective layer 105 material may include a combination of one or more metals such as silver, aluminum, titanium, tungsten, and nickel.

[0078] In some embodiments of the present invention, the material of the conductive connection portion 13 is indium tin oxide, indium zinc oxide, or aluminum-doped zinc oxide. In other embodiments of the present invention, the material of the conductive connection portion 13 includes a combination of one or more metals such as silver, aluminum, titanium, tungsten, and nickel. In still other embodiments of the present invention, the conductive connection portion 13 includes at least two materials, one of which is located below the conductive connection portion 13 and is indium tin oxide, indium zinc oxide, or aluminum-doped zinc oxide, and the other is located above the conductive connection portion 13 and includes a combination of one or more metals such as silver, aluminum, titanium, tungsten, and nickel.

[0079] The light-emitting diode further includes a second insulating layer 106 and a third insulating layer 107. The second insulating layer 106 and the third insulating layer 107 can be formed by physical vapor deposition or chemical vapor deposition, and the formed second insulating layer 106 and the third insulating layer 107 can be patterned by photolithography or etching. The second insulating layer 106 and the third insulating layer 107 are provided to avoid cracks or perforations in the insulating layer above the N-ohmic contact layer at the edge of the chip in the background technology, which causes the upper and lower electrode connection layers with different electrical polarities to be connected to the epitaxial structure and cause a local short circuit.

[0080] Embodiment 2

[0081] This embodiment is used to illustrate the light emitting device of the present application. Figure 8 As shown, the light emitting device 300 of the present application includes a plurality of light emitting diodes 301 of the present application, and also includes a circuit substrate 302 and solder.

[0082] The circuit substrate 302 includes a plurality of pad electrodes, and a plurality of light emitting diodes 301 are arranged on the circuit substrate 302. The light emitting diodes 301 are attached to the pad electrodes on the circuit substrate 302 by solder.

[0083] The light emitting diode of the present application has a second insulating layer 106 and a third insulating layer 107 which are not easy to break. Therefore, the light emitting device of the present application has reliable quality and low failure risk.

[0084] The above are only preferred embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A light emitting diode, characterized in that: include: A light-emitting epitaxial layer, comprising a first conductive type semiconductor layer, an active layer and a second conductive type semiconductor layer stacked in sequence, wherein in a top view, the light-emitting epitaxial layer comprises an outer peripheral portion and an inner region surrounded by the outer peripheral portion, the outer peripheral portion exposes a first surface of the first conductive type semiconductor layer, and the second conductive type semiconductor layer is arranged in the inner region surrounded by the outer peripheral portion; A conductive connection portion, disposed on the peripheral portion and contacting the first conductive type semiconductor layer; An insulating layer, formed on the light-emitting epitaxial layer, wherein the insulating layer has a first opening portion exposing a portion of a surface of the conductive connecting portion; A first contact electrode is formed on the first conductive type semiconductor layer and contacts the surface of the conductive connection portion through the first opening; a second contact electrode formed on the second conductive type semiconductor layer; a first pad electrode, formed on the first contact electrode and electrically connected to the first conductive type semiconductor layer; The second pad electrode is formed on the second contact electrode and is electrically connected to the second conductive type semiconductor layer.

2. The light emitting diode according to claim 1, characterized in that: The conductive connection portion is electrically insulated from the second contact electrode.

3. The light emitting diode according to claim 1, characterized in that: The light-emitting diode has four sides, which are defined as a first side, a second side, a third side and a fourth side in a circumferential direction; the light-emitting diode includes a virtual center line, which is parallel to the first side and located in the middle position between the first side and the third side, and the first pad electrode and the second pad electrode are located on both sides of the virtual center line.

4. The light emitting diode according to claim 3, characterized in that: The light-emitting diode is divided into a first side and a second side by the virtual center line, the first pad electrode is located on the first side, the second pad electrode is located on the second side, and the peripheral projection area of ​​the conductive connection portion on the first side is smaller than the peripheral projection area of ​​the conductive connection portion on the second side.

5. The light emitting diode according to claim 3, characterized in that: The first edge extends in a first direction, the first contact electrode includes a first portion formed on the outer peripheral portion, and a projection of the first portion in the first direction does not overlap with a projection of the second pad electrode in the first direction.

6. The light emitting diode according to claim 5, characterized in that: A projection of the conductive connection portion in the first direction overlaps with a projection of the first pad electrode in the first direction, and a projection of the conductive connection portion in the first direction overlaps with a projection of the second pad electrode in the first direction.

7. The light emitting diode according to claim 5, characterized in that: The projection of the conductive connection portion in the stacking direction of the light-emitting epitaxial layer has an overlapping area with the first contact electrode, and the projection of the conductive connection portion in the stacking direction of the light-emitting epitaxial layer has no overlapping area with the second contact electrode.

8. The light emitting diode according to claim 1, characterized in that: The conductive connection portion includes a first conductive segment and / or a second conductive segment adjacent to the first pad electrode, a projection of the first conductive segment on the periphery and a projection of the first contact electrode on the periphery having an overlapping area; a projection of the second conductive segment on the periphery and a projection of the first contact electrode on the periphery having an overlapping area; and a portion on the upper surface of the conductive connection portion connected to the first contact electrode is arranged on the upper surface of the first conductive segment and / or the second conductive segment.

9. The light emitting diode according to claim 1, characterized in that: The conductive connecting portion is a strip-shaped structure, a U-shaped structure or a ring-shaped structure.

10. The light emitting diode according to claim 1, characterized in that: The inner region includes a first side wall, the first side wall connects the second conductive type semiconductor layer and the first conductive type semiconductor layer, and a first distance exists between the first side wall and the conductive connection portion, and the first distance is greater than 0.

11. The light emitting diode according to claim 10, characterized in that: The first distance is greater than 1 micron.

12. The light emitting diode according to claim 1, characterized in that: The conductive connection portion is made of indium tin oxide, indium zinc oxide or aluminum-doped zinc oxide.

13. The light emitting diode according to claim 4, characterized in that: The insulating layer includes a first insulating layer, the first insulating layer covers the conductive connection portion located on the second side; and the first insulating layer exposes at least a portion of the conductive connection portion located on the first side.

14. The light emitting diode according to claim 1, characterized in that: The material of the conductive connection portion includes one or more combinations of metals such as silver, aluminum, titanium, tungsten, and nickel.

15. A light emitting device, characterized in that: The light emitting diode comprises the light emitting diode as claimed in any one of claims 1 to 14.

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