A digital-based special equipment sensing information processing system and method

Abstract

The present invention relates to the field of special equipment detection, and specifically to a digital-based special equipment sensing information processing system and method, including: a thin film cultivation module, a classification excitation module, a high-temperature stability module, an acoustic wave control module, and a matrix analysis module. The thin film cultivation module is used to cultivate ultrasonic piezoelectric thin films. The classification excitation module is used to perform annealing treatments on the thin films to different degrees and recover the excited acoustic waves. The high-temperature stability module is used to fit the thermal stability function of the thin films. The acoustic wave control module is used to match the material to be detected and the ultrasonic sensor. The matrix analysis module is used to adjust the excitation current and analyze the material stress. The present invention can optimize the preparation process and production flow of ultrasonic piezoelectric thin films, improve production efficiency and product quality, and at the same time improve the sensing performance of ultrasonic piezoelectric thin films, enhance the detection sensitivity and resolution of acoustic waves, and achieve more efficient acoustic wave excitation and sensing functions.

Description

Technical Field

[0001] The present invention relates to the field of special equipment detection, and particularly to a digital-based special equipment sensing information processing system and method. Background Technique

[0002] Ultrasonic testing has become one of the most important means for special equipment inspection and testing due to its advantages such as convenience, speed, and harmlessness to the human body. It is widely applicable to fields such as defect detection, stress measurement, thickness measurement, and bolt axial force measurement. The conventional detection process is to coat an ultrasonic piezoelectric film on the material to be detected, and an electric current is used to excite the film to emit ultrasonic waves. The stress magnitude of each part in the material to be detected is determined according to the transmission echo of the ultrasonic waves.

[0003] Existing ultrasonic sensors are mainly applicable to normal temperature environments. Under high temperature conditions, especially in environments above 400 °C, the ultrasonic piezoelectric film is affected by temperature, and its internal parameters will change. When cultivating the film by magnetron sputtering, testing and selection from films in different cultivation states are a major difficulty in high-temperature detection technology. Selecting unqualified films easily leads to unstable excitation of ultrasonic waves.

[0004] Some film testing technologies detect the thermal stability of the film by continuous annealing method, but the annealing effects may interfere with each other, and this method mainly tests the piezoelectric properties of the film rather than the ultrasonic properties. The testing speed is slow, the results are not accurate enough, and the excitation state of the film cannot be adjusted flexibly. Summary of the Invention

[0005] The purpose of the present invention is to provide a digital-based special equipment sensing information processing system and method to solve the problems raised in the above background technique.

[0006] To solve the above technical problems, the present invention provides the following technical solution: A digital-based special equipment sensing information processing system includes: a film cultivation module, a classification excitation module, a high-temperature stability module, an acoustic wave control module, and a matrix analysis module;

[0007] The film cultivation module is used to spray a piezoelectric coating on a crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, prepare a transition layer composed of AgCr material by arc ion plating technology, closely bond the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film, and record the cultivation parameters of each film during the cultivation process;

[0008] The classification excitation module is used to classify the films under the same cultivation conditions, anneal the ultrasonic piezoelectric films at different temperatures and annealing times, pass a standard excitation current into the treated films, set an acoustic wave collection device at the other end of the films to detect the echo of the films, substitute the first peak value of the echo of the films into the ultrasonic excitation formula, and obtain the central frequency of the excitation sound waves of each film;

[0009] The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested;

[0010] The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match ultrasonic sensors for all materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency.

[0011] The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

[0012] Further, the film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit;

[0013] The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate, wherein the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate;

[0014] The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric film.

[0015] Furthermore, the classification excitation module includes: an annealing control unit, an ultrasonic excitation unit and a spectrum analysis unit;

[0016] The annealing control unit is used to perform annealing treatments at different temperatures and durations on the ultrasonic piezoelectric films obtained under various cultivation parameters, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness;

[0017] The ultrasonic excitation unit is used to apply an excitation current to the ultrasonic piezoelectric film and collect the excited ultrasonic waves;

[0018] The frequency spectrum analysis unit is used to separate the peak values of the ultrasonic waves and output the central frequency of the sound waves.

[0019] Furthermore, the high-temperature stability module includes: a central comparison unit and a stability evaluation unit;

[0020] The central comparison unit is used to compare the central frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions;

[0021] The stability evaluation unit is used to output the thermal stability function of the ultrasonic piezoelectric film.

[0022] Furthermore, the sound wave control module includes: a performance verification unit and a current regulation unit;

[0023] The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be inspected according to the thermal stability function and output the matching result;

[0024] The current regulation unit is used to calculate the magnitude of the excitation current of the sensor according to the thermal stability function of the preselected film, the temperature of the substrate material, and the annealing time.

[0025] Furthermore, the substrate analysis module includes: a substrate coating unit, an echo collection unit, and a stress evaluation unit;

[0026] The substrate coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be measured and apply an excitation current for ultrasonic excitation;

[0027] The echo collection unit is used to collect the echoes of the excited ultrasonic waves and transmit the echoes of each frequency band into the computer;

[0028] The stress evaluation unit is used to analyze the echoes and calculate the stress magnitudes at various positions of the material to be measured by using the ultrasonic transmission stress model.

[0029] A digital-based special equipment sensing information processing method includes the following steps:

[0030] Step S1. Spraying a piezoelectric coating on a crystallization substrate with different cultivation parameters, preparing a transition layer composed of AgCr material by arc ion plating technology, and tightly fitting the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film;

[0031] Step S2. Annealing various ultrasonic piezoelectric films at different temperatures and annealing durations, inputting a standard excitation current into the processed films, detecting the first peak value of the excited sound waves, and substituting the first peak value into the ultrasonic excitation formula to obtain the central frequency of the excited sound waves;

[0032] Step S3. Fit the shift of the central frequency of the acoustic wave excited by the thin film under different annealing conditions. Taking the annealing temperature and annealing duration as two-dimensional variables, establish the thermal stability function of the ultrasonic piezoelectric thin film, and calculate the thermal stability of the thin film on the material to be detected according to the working environment of the material to be detected.

[0033] Step S4. Match an ultrasonic piezoelectric thin film for each material to be detected to minimize the thermal stability of the selected ultrasonic piezoelectric thin film, and determine the cultivation parameters and production plan of the ultrasonic piezoelectric thin film according to the matching results.

[0034] Step S5. Adjust the magnitude of the excitation current of the sensor according to the thermal stability function of the ultrasonic piezoelectric thin film, the working temperature and annealing duration of the matrix material, so that the central frequency of the excited acoustic wave is the same as the ideal test frequency. Collect the echo of the excited acoustic wave in the material to be detected, transmit the echo signal to the SVM model, and output the stress of each part of the matrix.

[0035] Further, step S1 includes:

[0036] Step S11. Spray a piezoelectric coating material on a crystalline substrate by using a high-density radio frequency sputtering technique. The crystalline substrate includes: a glass substrate, a ceramic substrate, and a sapphire substrate. The piezoelectric coating material includes: ZnO, AlN, and LiNbO3 materials.

[0037] Step S12. Prepare a transition layer made of AgCr material in advance, grow a piezoelectric coating crystal on the transition layer, and make the transition layer fit tightly with the piezoelectric coating to form an ultrasonic piezoelectric thin film.

[0038] Step S13. Control the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric thin films in different cultivation states. The cultivation parameters include: target power, temperature, air pressure, and coating thickness.

[0039] Further, step S2 includes:

[0040] Step S21. For each ultrasonic piezoelectric thin film obtained under each cultivation parameter, perform steps S22 - S24 to obtain the central frequency of the acoustic wave excited by the thin film.

[0041] Step S22. Place the ultrasonic piezoelectric thin film in a high-temperature pressure-bearing device. Every time a temperature-rising cycle is completed, raise the temperature in the high-temperature pressure-bearing device by T0 (T0 is a preset temperature range). After the temperature-rising cycle is completed, perform annealing treatment on the thin film for different durations, and introduce a standard excitation current into the annealed thin film.

[0042] Step S23. Set an acoustic wave collection device at the other end of the thin film to detect the echo of the excited acoustic wave, separate the first peak value of the excited acoustic wave, and obtain the acoustic wave amplitude corresponding to the first peak value.

[0043] Step S24. Calculate the center frequency of the excitation sound wave according to the ultrasonic excitation formula, wherein the ultrasonic excitation formula is:

[0044]

[0045] Wherein, c is the first peak value of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the exciting current, ωt is the frequency of the exciting current, p is the density of the material, s is the area of the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave;

[0046] Substituting the first peak value and the parameters of the ultrasonic piezoelectric film into the ultrasonic excitation formula, the central frequency of the excited sound wave is obtained.

[0047] Further, step S3 includes:

[0048] Step S31. The center frequency of the exciting sound wave, the annealing temperature, annealing time and cultivation parameters of the ultrasonic piezoelectric film are stored in a database, and the center frequency is used as the dependent variable, and the annealing temperature and annealing time are used as two-dimensional influencing variables. The function F(Q, T) is fitted using Origin or MATLAB tools, where Q is the annealing temperature, T is the annealing time, and F(Q, T) is a thermal stability function, which represents the center frequency of the sound wave generated by the ultrasonic piezoelectric film under the standard excitation current;

[0049] Step S32: Substitute the working temperature and annealing time of the material to be tested into the thermal stability function of the ultrasonic piezoelectric film, and calculate the thermal stability according to the following formula:

[0050]

[0051] Among them, R is the thermal stability of the film, Q1 and Q2 are the upper and lower limits of the working temperature of the material to be tested, T1 and T2 are the upper and lower limits of the annealing time of the material to be tested, and Wa and Wb are the upper and lower limits of the ultrasonic frequency range.

[0052] Further, step S4 includes:

[0053] Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database;

[0054] Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic films under the same cultivation parameters are combined and calculated to output a production plan for the thin film sensors.

[0055] Further, step S5 includes:

[0056] Step S51. Apply excitation currents of different magnitudes to the preselected ultrasonic film for energization testing, detect the center frequency of the excited acoustic wave, take the optimal detected acoustic wave frequency of the detected acoustic wave as the ideal test frequency, and select the excitation current when the deviation between the center frequency and the ideal test frequency is the smallest as the ultrasonic detection current;

[0057] Step S52. Coat the preselected ultrasonic film on the substrate of the material to be tested, apply the ultrasonic detection current for ultrasonic excitation, collect the echoes of the excited ultrasonic waves, transmit the echoes of each frequency band into the computer, and the computer analyzes the echoes using the SVM model to detect the stress magnitudes at various positions in the substrate of the material to be tested.

[0058] Compared with the prior art, the beneficial effects achieved by the present invention are as follows:

[0059] 1. The present invention grows piezoelectric ultrasonic films on a crystalline substrate with different chemical vapor deposition parameters, performs high-temperature annealing treatment on the piezoelectric ultrasonic film materials grown under different adjustments, adjusts the annealing temperature and annealing duration for each material respectively, and detects the highest amplitude of the excited acoustic wave, which can test the quality and performance of the film at high temperature, helps optimize the preparation process and production flow of the ultrasonic piezoelectric film, and improves production efficiency and product quality.

[0060] 2. The present invention calculates the center frequency of the excited acoustic wave based on the highest amplitude and film parameters, obtains the two-dimensional high-temperature stability function of the film according to the deviation of the acoustic wave frequency under different conditions, replaces electrical detection with excited acoustic wave detection, optimizes the film testing process, helps determine the cultivation parameters of high-performance piezoelectric films, and ensures the accuracy and reliability of the test results.

[0061] 3. The present invention coats the preselected ultrasonic film on the matrix material, adjusts the excitation current according to the temperature and annealing time of the matrix material and the high-temperature stability function of the preselected material, makes the ultrasonic frequency the same as the ideal test ultrasonic frequency, optimizes the sensing performance of the ultrasonic piezoelectric film, improves the detection sensitivity and resolution of the acoustic wave, and realizes a more efficient acoustic wave excitation and sensing function. Description of the Drawings

[0062] The drawings are used to provide a further understanding of the present invention, and constitute a part of the specification. They are used to explain the present invention together with the embodiments of the present invention, and do not constitute a limitation to the present invention. In the drawings:

[0063] Figure 1 is a schematic structural diagram of a digital-based special equipment sensing information processing system of the present invention;

[0064] Figure 2 is a schematic step diagram of a digital-based special equipment sensing information processing method of the present invention. Detailed Embodiments

[0065] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts belong to the scope of protection of the present invention.

[0066] Please refer to Figure 1 , the present invention provides a technical solution: a digital-based special equipment sensing information processing system, including: a thin film cultivation module, a classification excitation module, a high-temperature stability module, an acoustic wave control module, and a matrix analysis module;

[0067] The thin film cultivation module is used to spray a piezoelectric coating on a crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, prepare a transition layer composed of AgCr material by using arc ion plating technology, and closely bond the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric thin film, and record the cultivation parameters of each thin film during the cultivation process;

[0068] The thin film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit;

[0069] The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate. The piezoelectric coating material includes: ZnO, AIN, and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate, and a sapphire substrate;

[0070] The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric thin film.

[0071] The classification excitation module is used to classify the thin films under the same cultivation conditions, anneal the ultrasonic piezoelectric thin films at different temperatures and annealing durations, introduce a standard excitation current into the processed thin films, set an acoustic wave collection device at the other end of the thin films to detect the thin film echo, and substitute the first peak value of the thin film echo into the ultrasonic excitation formula to obtain the center frequency of the excitation acoustic wave of each thin film;

[0072] The classification excitation module includes: an annealing control unit, an ultrasonic excitation unit, and a spectrum analysis unit;

[0073] The annealing control unit is used to anneal the ultrasonic piezoelectric thin films obtained under various cultivation parameters at different temperatures and durations. The cultivation parameters include: target power, temperature, air pressure, and coating thickness;

[0074] The ultrasonic excitation unit is used to introduce an excitation current into the ultrasonic piezoelectric thin film and collect the excited ultrasonic waves;

[0075] The spectrum analysis unit is used to separate the peak value of the ultrasonic wave and output the center frequency of the sound wave.

[0076] The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested;

[0077] The high temperature stabilization module includes: a central comparison unit and a stability evaluation unit;

[0078] The center comparison unit is used to compare the center frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions;

[0079] The stability evaluation unit is used to output a thermal stability function of the ultrasonic piezoelectric film.

[0080] The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match ultrasonic sensors for all materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency.

[0081] The acoustic wave control module includes: a performance verification unit and a current regulation unit;

[0082] The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be tested according to the thermal stability function and output the matching result;

[0083] The current regulating unit is used to calculate the sensor excitation current size according to the thermal stability function of the preselected film, the temperature of the base material and the annealing time.

[0084] The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

[0085] The substrate analysis module includes: a substrate coating unit, an echo collection unit and a stress evaluation unit;

[0086] The base coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be tested, and an excitation current is passed through to perform ultrasonic excitation;

[0087] The echo collection unit is used to collect the echoes of the excited ultrasonic waves and transmit the echoes of each frequency band into the computer;

[0088] The stress evaluation unit is used to analyze the echoes and calculate the stress magnitudes at various positions of the material to be tested by using the ultrasonic transmission stress model.

[0089] As Figure 2 shown, a digitization-based method for processing sensing information of special equipment includes the following steps:

[0090] Step S1. Spray a piezoelectric coating on a crystallization substrate with different cultivation parameters, prepare a transition layer composed of AgCr material by arc ion plating technology, and closely bond the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film;

[0091] Step S1 includes:

[0092] Step S11. Spray a piezoelectric coating material on a crystallization substrate by using high-density radio frequency sputtering technology. The crystallization substrate includes: a glass substrate, a ceramic substrate, and a sapphire substrate. The piezoelectric coating materials include: ZnO, AIN, and LiNbO3 materials;

[0093] Step S12. Prepare a transition layer composed of AgCr material in advance, grow piezoelectric coating crystals on the transition layer, and closely bond the transition layer and the piezoelectric coating to form an ultrasonic piezoelectric film;

[0094] Step S13. Control the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric films in different cultivation states. The cultivation parameters include: target power, temperature, air pressure, and coating thickness.

[0095] Step S2. Anneal various ultrasonic piezoelectric films at different temperatures and annealing durations, input a standard excitation current into the processed films, detect the first peak value of the excited sound wave, and substitute the first peak value into the ultrasonic excitation formula to obtain the center frequency of the excited sound wave;

[0096] Step S2 includes:

[0097] Step S21. For each ultrasonic piezoelectric film obtained under each cultivation parameter, perform steps S22 - S24 to obtain the center frequency of the excited sound wave of the film;

[0098] Step S22. Place the ultrasonic piezoelectric thin film into a high-temperature pressure-bearing device. Every other heating cycle, raise the temperature inside the high-temperature pressure-bearing device by T0, where T0 is a preset temperature range. After the heating cycle ends, perform annealing on the thin film for different durations, and pass a standard excitation current into the annealed thin film.

[0099] Step S23. Set up a sound wave collection device at the other end of the thin film to detect the echo of the excited sound wave, separate the first peak of the excited sound wave, and obtain the sound wave amplitude corresponding to the first peak.

[0100] Step S24. Calculate the center frequency of the excited sound wave according to the ultrasonic excitation formula. The ultrasonic excitation formula is:

[0101]

[0102] where c is the first peak of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the excitation current, ωt is the frequency of the excitation current, p is the density of the material, s is the area of the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave.

[0103] Substitute the first peak and the parameters of the ultrasonic piezoelectric thin film into the ultrasonic excitation formula to obtain the center frequency of the excited sound wave.

[0104] Step S3. Fit the shift of the center frequency of the sound wave excited by the thin film under different annealing conditions. Using the annealing temperature and annealing duration as two-dimensional variables, establish a thermal stability function of the ultrasonic piezoelectric thin film, and calculate the thermal stability of the thin film on the material to be tested according to the working environment of the material to be tested.

[0105] Step S3 includes:

[0106] Step S31. Store the center frequency of the excited sound wave, the annealing temperature, annealing duration, and cultivation parameters of the ultrasonic piezoelectric thin film in a database. Using the center frequency as the dependent variable and the annealing temperature and annealing duration as two-dimensional influencing variables, use tools such as Origin or MATLAB to fit the function F(Q,T), where Q is the annealing temperature, T is the annealing duration, and F(Q,T) is the thermal stability function, representing the center frequency of the sound wave generated by the ultrasonic piezoelectric thin film under the standard excitation current.

[0107] Step S32. Substitute the working temperature and annealing duration of the material to be tested into the thermal stability function of the ultrasonic piezoelectric thin film, and calculate the thermal stability according to the following formula:

[0108]

[0109] Among them, R is the thermal stability of the film, Q1 and Q2 are the upper and lower limits of the working temperature of the material to be tested, T1 and T2 are the upper and lower limits of the annealing time of the material to be tested, and Wa and Wb are the upper and lower limits of the ultrasonic frequency range.

[0110] Step S4. Matching an ultrasonic piezoelectric film for each material to be tested, so that the thermal stability of the selected ultrasonic piezoelectric film is minimized, and determining the cultivation parameters and production plan of the ultrasonic piezoelectric film according to the matching results;

[0111] Step S4 includes:

[0112] Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database;

[0113] Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic films under the same cultivation parameters are combined and calculated to output a production plan for the thin film sensors.

[0114] Step S5. According to the thermal stability function of the ultrasonic piezoelectric film, the operating temperature of the matrix material and the annealing time, adjust the excitation current of the sensor so that the center frequency of the excitation sound wave is the same as the ideal test frequency, collect the echo of the excitation sound wave in the material to be tested, transmit the echo signal to the SVM model, and output the stress of each part of the matrix.

[0115] Step S5 includes:

[0116] Step S51. Use different magnitudes of excitation current to conduct a power-on test on the preselected ultrasonic film, detect the center frequency of the excitation sound wave, take the best detected sound wave frequency of the detected sound wave as the ideal test frequency, and select the excitation current with the smallest deviation between the center frequency and the ideal test frequency as the ultrasonic detection current;

[0117] Step S52. Coat a preselected ultrasonic film on the substrate of the material to be tested, pass an ultrasonic detection current for ultrasonic excitation, collect the echo of the excited ultrasound, transmit the echo of each frequency band to the computer, and use the SVM model to analyze the echo on the computer to detect the stress magnitude at each position in the substrate of the material to be tested.

[0118] Embodiment: The laser equipment grows three kinds of ultrasonic films under different growth parameters. After high temperature testing, the thermal stability coefficients between the three kinds of films and the material to be tested are 2.1, 3.0 and 1.7 respectively. The third kind of ultrasonic film is selected for high temperature detection. When the excitation current is adjusted, it is detected that the center frequency of the film is closest to the ideal frequency under the action of 0.1mA current, and ultrasonic detection is carried out with 0.1mA as the excitation current.

[0119] It should be noted that, in this document, relational terms such as first and second are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations. Moreover, the term "comprising", "including" or any other variant thereof is intended to cover non-exclusive inclusion, so that a process, method, article or device comprising a series of elements not only includes those elements, but also includes other elements not expressly listed, or further includes elements inherent to such process, method, article or device.

[0120] Finally, it should be noted that the above are only preferred embodiments of the present invention and are not intended to limit the present invention. Although the present invention has been described in detail with reference to the foregoing embodiments, those skilled in the art can still modify the technical solutions described in the foregoing embodiments, or perform equivalent replacements for some of the technical features. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principle of the present invention shall be included within the protection scope of the present invention.

Claims

1. A method for processing sensing information of special equipment based on digitization, characterized in that, The method includes the following steps: Step S1. Spray a piezoelectric coating on a crystallization substrate with different cultivation parameters, prepare a transition layer made of AgCr material by arc ion plating technology, and closely bond the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric thin film; Step S2. Anneal various ultrasonic piezoelectric thin films at different temperatures and annealing durations, input a standard excitation current into the processed thin films, detect the first peak value of the excited sound wave, substitute the first peak value into the ultrasonic excitation formula to obtain the center frequency of the excited sound wave; Step S3. Fit the shift of the center frequency of the excited sound wave of the thin film under different annealing conditions, establish a thermal stability function of the ultrasonic piezoelectric thin film with the annealing temperature and annealing duration as two-dimensional variables, and calculate the thermal stability of the thin film on the material to be detected according to the working environment of the material to be detected; Step S4. Match an ultrasonic piezoelectric thin film for each material to be detected to minimize the thermal stability of the selected ultrasonic piezoelectric thin film, and determine the cultivation parameters and production plan of the ultrasonic piezoelectric thin film according to the matching result; Step S5. Adjust the magnitude of the excitation current of the sensor according to the thermal stability function of the ultrasonic piezoelectric thin film, the working temperature and annealing duration of the matrix material, so that the center frequency of the excited sound wave is the same as the ideal test frequency, collect the echo of the excited sound wave in the material to be detected, transmit the echo signal to the SVM model, and output the stress of each part of the matrix; Step S3 includes: Step S31. Store the center frequency of the excited sound wave, the annealing temperature, annealing duration and cultivation parameters of the ultrasonic piezoelectric thin film in the database. Taking the center frequency as the dependent variable and the annealing temperature and annealing duration as two-dimensional influencing variables, use tools such as Origin or MATLAB to fit the function F(Q,T), where Q is the annealing temperature, T is the annealing duration, and F(Q,T) is the thermal stability function, representing the center frequency of the sound wave generated by the ultrasonic piezoelectric thin film under the standard excitation current; Step S32. Substitute the working temperature and annealing duration of the material to be detected into the thermal stability function of the ultrasonic piezoelectric thin film, and calculate the thermal stability according to the following formula: where R is the thermal stability of the thin film, Q1 and Q2 are respectively the upper and lower limits of the working temperature of the material to be detected, T1 and T2 are respectively the upper and lower limits of the annealing duration of the material to be detected, and Wa and Wb are respectively the upper and lower limits of the ultrasonic frequency range.

2. The method for processing special equipment sensing information based on digitization according to claim 1, characterized in that: Step S1 includes: Step S11. Spray a piezoelectric coating material on a crystallization substrate by using high-density radio frequency sputtering technology. The crystallization substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate. The piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials; Step S12. Prepare a transition layer made of AgCr material in advance, grow a piezoelectric coating crystal on the transition layer, and closely bond the transition layer and the piezoelectric coating to form an ultrasonic piezoelectric thin film; Step S13. Control the cultivation parameters during the film growth process to obtain ultrasonic piezoelectric thin films in different cultivation states. The cultivation parameters include: target power, temperature, air pressure and coating thickness.

3. The method for processing special equipment sensing information based on digitization according to claim 2, wherein: Step S2 includes: Step S21. For each ultrasonic piezoelectric thin film obtained under each cultivation parameter, execute Steps S22 - S24 to obtain the center frequency of the excited sound wave of the thin film; Step S22. Place the ultrasonic piezoelectric film in a high-temperature pressure-bearing device. Every other heating cycle, raise the temperature in the high-temperature pressure-bearing device by T0, where T0 is a preset temperature range. After the heating cycle, perform annealing treatment for different lengths of time on the film, and pass a standard excitation current through the annealed film. Step S23. A sound wave collecting device is arranged at the other end of the film to detect the echo of the exciting sound wave, separate the first peak of the exciting sound wave, and obtain the sound wave amplitude corresponding to the first peak; Step S24. Calculate the center frequency of the excitation sound wave according to the ultrasonic excitation formula, wherein the ultrasonic excitation formula is: Wherein, c is the first peak value of the excited sound wave, u is the magnetic permeability of the piezoelectric coating material, I is the magnitude of the exciting current, ωt is the frequency of the exciting current, p is the density of the material, s is the area of the material, L is the skin depth of the material, and ω is the center frequency of the excited sound wave; Substituting the first peak value and the parameters of the ultrasonic piezoelectric film into the ultrasonic excitation formula, the central frequency of the excited sound wave is obtained.

4. A method for processing sensing information of special equipment based on digitization according to claim 3, characterized in that: Step S4 includes: Step S41. For each material to be tested, the ultrasonic piezoelectric film with the lowest thermal stability is used as the pre-selected ultrasonic film for the material to be tested, and the serial number of the material to be tested and the cultivation parameters of the pre-selected ultrasonic film are marked in the database; Step S42. Produce thin film sensors according to the cultivation parameters of the pre-selected ultrasonic thin films. The production quantity is determined by the quantity of the corresponding materials to be tested. The pre-selected ultrasonic thin films under the same cultivation parameters are combined and calculated, and the production plan of the thin film sensors is output; Step S5 includes: Step S51. Use different magnitudes of excitation current to conduct a power-on test on the preselected ultrasonic film, detect the center frequency of the excitation sound wave, take the best detected sound wave frequency of the detected sound wave as the ideal test frequency, and select the excitation current with the smallest deviation between the center frequency and the ideal test frequency as the ultrasonic detection current; Step S52. Coat a preselected ultrasonic film on the substrate of the material to be tested, pass an ultrasonic detection current for ultrasonic excitation, collect the echo of the excited ultrasound, transmit the echo of each frequency band to the computer, and use the SVM model to analyze the echo on the computer to detect the stress magnitude at each position in the substrate of the material to be tested.

5. A digital-based special equipment sensing information processing system, the system executes a digital-based special equipment sensing information processing method described in claim 1, characterized in that, The system includes the following modules: a film cultivation module, a classification excitation module, a high temperature stabilization module, an acoustic wave control module and a matrix analysis module; The thin film cultivation module is used to spray the piezoelectric coating on the crystalline substrate by using high-density radio frequency sputtering technology, adjust different cultivation parameters, control the orientation and density of the piezoelectric coating on the substrate surface, use arc ion plating technology to prepare a transition layer composed of AgCr material, and tightly fit the transition layer and the piezoelectric coating on the substrate to form an ultrasonic piezoelectric film, and record the cultivation parameters of each film during the cultivation process; The classification excitation module is used to classify the films under the same cultivation conditions, anneal the ultrasonic piezoelectric films at different temperatures and annealing times, pass a standard excitation current into the treated films, set an acoustic wave collection device at the other end of the films to detect the echo of the films, substitute the first peak value of the echo of the films into the ultrasonic excitation formula, and obtain the central frequency of the excitation sound waves of each film; The high temperature stability module is used to fit the shift of the center frequency of the film under different annealing conditions, and the thermal stability function of the ultrasonic piezoelectric film is established with the annealing temperature and annealing time as two-dimensional independent variables and the center frequency shift as the influencing parameter. The working temperature and annealing time of each material to be tested are substituted into the thermal stability function of each film to calculate the thermal stability of the film on the material to be tested; The acoustic wave control module is used to match the ultrasonic piezoelectric film and the material to be tested, select the film material with the lowest integral of the thermal stability function within the corresponding frequency of the ultrasonic wave as the pre-selected ultrasonic sensor for the material to be tested, match the ultrasonic sensor for all the materials to be tested, and arrange the production plan according to the number of materials to be tested and the cultivation conditions of the ultrasonic piezoelectric film, and adjust the excitation current according to the thermal stability function of the pre-selected material according to the temperature and annealing time of the base material, so that the ultrasonic frequency is the same as the ideal test ultrasonic frequency; The matrix analysis module is used to coat a preselected ultrasonic film on the matrix of the material to be tested, and during the detection process, the ultrasonic film is current excited using the excitation current corresponding to the ultrasonic piezoelectric film, the echo of the ultrasonic signal in the material to be tested is collected, the echo signal is transmitted to the computer, the stress equation of the matrix of the material to be tested is analyzed, and the material stress model is output.

6. The special equipment sensing information processing system based on digitization according to claim 5, characterized in that: The film cultivation module includes: a radio frequency sputtering unit and a crystal growth unit; The radio frequency sputtering unit is used to spray a piezoelectric coating material on a crystalline substrate, wherein the piezoelectric coating material includes: ZnO, AIN and LiNbO3 materials, and the substrate includes: a glass substrate, a ceramic substrate and a sapphire substrate; The crystal growth unit is used to prepare a transition layer composed of AgCr material, and grow piezoelectric coating crystals on the transition layer to form an ultrasonic piezoelectric film.

7. The special equipment sensing information processing system based on digitization according to claim 6, characterized in that: The classification excitation module includes: an annealing control unit, an ultrasonic excitation unit and a spectrum analysis unit; The annealing control unit is used to perform annealing treatments at different temperatures and durations on the ultrasonic piezoelectric films obtained under various cultivation parameters, wherein the cultivation parameters include: target power, temperature, air pressure and coating thickness; The ultrasonic excitation unit is used to pass an excitation current to the ultrasonic piezoelectric film to collect the excited ultrasonic wave; The spectrum analysis unit is used to separate the peak value of the ultrasonic wave and output the center frequency of the sound wave.

8. A digital-based special equipment sensing information processing system according to claim 7, characterized in that: The high temperature stabilization module includes: a central comparison unit and a stability evaluation unit; The center comparison unit is used to compare the center frequencies of the sound waves excited by the ultrasonic piezoelectric film under different annealing conditions; The stability evaluation unit is used to output a thermal stability function of the ultrasonic piezoelectric film; The acoustic wave control module includes: a performance verification unit and a current regulation unit; The performance verification unit is used to match the ultrasonic piezoelectric film and the material to be tested according to the thermal stability function and output the matching result; The current regulating unit is used to calculate the sensor excitation current size according to the thermal stability function of the preselected film, the temperature of the base material and the annealing time.

9. The special equipment sensing information processing system based on digitization according to claim 8, characterized in that: The substrate analysis module includes: a substrate coating unit, an echo collection unit and a stress evaluation unit; The substrate coating unit is used to coat a preselected ultrasonic film on the substrate of the material to be tested, and to pass an excitation current for ultrasonic excitation; The echo collection unit is used to collect the echoes of the excited ultrasound and transmit the echoes of each frequency band into the computer; The stress evaluation unit is used to analyze the echoes and calculate the stress magnitudes at various positions of the material to be measured by using the ultrasonic transmission stress model.

Images