Protection setting adjustment method, system and device and storage medium

Abstract

The embodiment of the invention relates to the technical field of overheating protection, and discloses a protection setting adjustment method, system and device and a storage medium. According to the method, judgment is performed according to the magnitude relation of the current values of the three-phase current, so that whether the current working condition meets the working condition needing to adjust temperature protection triggering or not is determined; moreover, according to whether the temperature of the MOS reaches the adjusted temperature protection triggering condition or not, triggering of temperature protection is realized, that is, whether the current working condition needs to adjust the temperature protection triggering condition or not is determined according to the current value of the three-phase current; whether temperature protection is triggered or not is further judged according to the actual MOS temperature condition, so that the temperature protection triggering condition dynamically meets the actual working condition requirement, the temperature protection triggering flexibility is improved, temperature protection triggering is more timely, MOS damage is effectively avoided, and the service life of equipment is prolonged.

Description

Technical Field

[0001] Embodiments of the present invention relate to the technical field of overheat protection, and in particular to a protection setting adjustment method, system, device and storage medium. Background Art

[0002] In modern devices, Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) is an important switching element. Due to its high efficiency, fast switching characteristics and good linear control ability, it is widely used in power management, motor drive, signal amplification and various types of analog circuits. With the advancement of technology and the increasing application demand, the operating frequency and power level of MOS continue to increase, and its performance and stability under high power consumption and high frequency conditions are particularly important. However, since MOS inevitably generates heat when working, if overheating cannot be effectively managed, this heat will cause the device temperature to rise, which will cause the device temperature to rise rapidly, which may cause the transmission characteristics to deteriorate, the power loss to increase, and even cause permanent damage to the device. Overheating not only affects the normal operation of MOS, but also poses a threat to the safety of the entire device system. Therefore, it is particularly important to implement an effective overheating protection strategy to ensure the stability and reliability of MOS under various working conditions and improve the overall performance and service life of electronic products.

[0003] In the related art, the method of implementing overheat protection is usually to place a thermistor (Negative Temperature Coefficient, NTC) close to the MOS in the printed circuit board (PCB) layout to detect the temperature of the MOS. When the temperature of the MOS rises, the resistance of the NTC changes, and when the temperature exceeds the preset value, the MOS temperature protection is triggered. However, the inventors found that there are at least the following problems in the related art: for the layout of only one MOS through an NTC detection device, since different MOSs will produce certain differences in temperature during actual operation, the MOS close to the NTC may not be the MOS with the highest temperature rise in actual working conditions; and the layout spacing between the NTC and the MOS is different, and the speed of temperature transfer is also different, which affects the timeliness and control accuracy of the temperature overheat protection, and is likely to damage the MOS components, affecting the service life of the MOS and the equipment. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a protection setting adjustment method, system, device and storage medium, so as to dynamically adjust the temperature protection triggering conditions of the device according to the actual working conditions, so as to make the triggering of the temperature protection more timely, effectively avoid MOS damage and improve the service life of the equipment.

[0005] To solve the above technical problems, an embodiment of the present invention provides a protection setting adjustment method, comprising: obtaining the current value of each phase circuit in a three-phase circuit in real time; judging the magnitude relationship between the current value of a target phase and the current values ​​of the other two phases in the three-phase current; if the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases satisfies a first preset condition, adjusting the protection threshold parameter of the device; obtaining the MOS temperature detected by a thermistor in real time; judging whether the MOS temperature meets a second preset condition based on the MOS temperature detected by the thermistor, the second preset condition being determined by the protection threshold parameter; if the MOS temperature meets the second preset condition, triggering the temperature protection function of the device.

[0006] An embodiment of the present invention also provides a protection setting adjustment system, including: a current value acquisition module, used to acquire the current value of each phase circuit in a three-phase circuit in real time; a first preset condition judgment module, used to judge the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases in the three-phase current; a protection threshold parameter adjustment module, used to adjust the protection threshold parameter of the device when the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases meets the first preset condition; a temperature acquisition module, the MOS temperature detected by the thermistor; a second preset condition judgment module, used to judge whether the MOS temperature meets the second preset condition based on the MOS temperature detected by the thermistor, and the second preset condition is determined by the protection threshold parameter; a temperature protection module, used to trigger the temperature protection function of the device when the MOS temperature meets the second preset condition.

[0007] An embodiment of the present invention also provides a device, comprising: at least one processor; and a memory communicatively connected to the at least one processor; wherein the memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the steps in the above-mentioned protection setting adjustment method.

[0008] An embodiment of the present invention further provides a computer-readable storage medium storing a computer program, wherein the computer program implements the steps in the above-mentioned protection setting adjustment method when executed by a processor.

[0009] In an embodiment of the present invention, a judgment is made based on the magnitude relationship of the current values ​​of the three-phase currents to determine whether the current operating condition meets the operating condition that requires adjustment of the temperature protection trigger; and further, the temperature protection is triggered based on whether the temperature of the MOS reaches the adjusted temperature protection trigger condition. That is, the present application determines whether the current operating condition requires adjustment of the temperature protection trigger condition based on the current values ​​of the three-phase currents, and further determines whether to trigger the temperature protection based on the actual MOS temperature conditions, so that the temperature protection trigger condition dynamically fits the actual operating condition requirements, thereby improving the flexibility of the temperature protection trigger, making the temperature protection trigger more timely, effectively avoiding MOS damage, and increasing the service life of the equipment.

[0010] In some embodiments of the present application, the first preset condition includes: the current value of the target phase is smaller than the current values ​​of the other two phases; the protection threshold parameters of the adjustment device include: lowering the protection threshold of the MOS, and / or lowering the startup protection parameter value of the device.

[0011] In some embodiments of the present application, the startup protection parameter value of the device includes a startup peak voltage of the device and / or a startup peak current of the device.

[0012] In some embodiments of the present application, the second preset condition includes: the temperature change rate reaches a preset threshold; the temperature change rate is the difference between the MOS temperature and a preset temperature value.

[0013] In some embodiments of the present application, the second preset condition also includes: the MOS temperature reaches a maximum temperature threshold; wherein the maximum temperature threshold is determined based on the highest MOS temperature detected by the thermistor during device pre-operation, or the maximum temperature threshold is a preset temperature threshold.

[0014] In some embodiments of the present application, the thermal element is only disposed near the MOS of the target phase; or, the thermal element is disposed near the MOS of each phase in the three-phase circuit.

[0015] In some embodiments of the present application, the determining of the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current includes: detecting the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases multiple times at preset time intervals; before determining whether the MOS temperature satisfies the second preset condition based on the MOS temperature detected by the thermistor, the method further includes: determining whether the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times; if the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times, obtaining the MOS temperature detected by the thermistor; if the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition does not reach the preset number of times, continuing to obtain the MOS temperature detected by the thermistor and the current value of each phase circuit in the three-phase circuit and determining the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0017] Figure 1 is a flow chart of a protection setting adjustment method provided by an embodiment of the present application;

[0018] Figure 2 This is a schematic diagram of the arrangement structure of the thermal element in the protection setting adjustment method provided in an embodiment of the present application. Figure 1 ;

[0019] Figure 3 is a temperature change rate curve diagram provided by an embodiment of the present application;

[0020] Figure 4 This is a schematic diagram of the arrangement structure of the thermal element in the protection setting adjustment method provided in an embodiment of the present application. Figure 2 ;

[0021] Figure 5 This is a schematic diagram of the arrangement structure of the thermal element in the protection setting adjustment method provided in an embodiment of the present application. Figure 3 ;

[0022] Figure 6 is a structural diagram of a protection setting adjustment system provided in an embodiment of the present application;

[0023] Figure 7 It is a schematic diagram of the internal structure of a device provided in one embodiment of the present application. DETAILED DESCRIPTION

[0024] During the operation of the machine, thermistors are used for equipment temperature protection. Due to the differences in the size of the copper plating area of ​​the PCB, if the current accumulates in a certain phase or the current of a certain phase is smaller than that of other phases during operation, the MOS temperature on the phase line circuit will increase, and it is easy to be higher than the MOS temperature on other phase line circuits, making it impossible for the equipment to accurately perform temperature protection, thereby reducing the service life of the components or equipment.

[0025] To make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the embodiments of the present invention will be described in detail below in conjunction with the accompanying drawings. However, it will be appreciated by those skilled in the art that in the embodiments of the present invention, many technical details are proposed in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can be implemented. The division of the following embodiments is for the convenience of description, and should not constitute any limitation on the specific implementation of the present invention. The various embodiments can be combined and referenced with each other without contradiction.

[0026] One embodiment of the present invention relates to a protection setting adjustment method, which can be applied to power tools, electric drills, electric hammers and other equipment that require overheat protection, and can also be applied to generators, motors, transformers and other equipment that use three-phase current. Real-time acquisition of the current value of each phase circuit in the three-phase circuit; judging the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current; if the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases meets the first preset condition, then adjusting the protection threshold parameter of the device; real-time acquisition of the MOS temperature detected by the thermistor; judging whether the MOS temperature meets the second preset condition based on the MOS temperature detected by the thermistor, the second preset condition is determined by the protection threshold parameter; if the MOS temperature meets the second preset condition, then triggering the temperature protection function of the device. By judging according to the magnitude relationship of the current values ​​of the three-phase current, it is determined whether the current working condition meets the working condition that requires adjustment of the temperature protection trigger; and further, according to whether the temperature of the MOS reaches the adjusted temperature protection trigger condition, the temperature protection is triggered, that is, the present application determines whether the current working condition requires adjustment of the temperature protection trigger condition according to the current value of the three-phase current, and further judges whether to trigger the temperature protection according to the actual MOS temperature condition, so that the temperature protection trigger condition dynamically fits the actual working condition requirements, thereby improving the flexibility of the temperature protection trigger, making the temperature protection trigger more timely, effectively avoiding MOS damage, and improving the service life of the equipment. The following is a specific description of the implementation details of the protection setting adjustment method of the embodiment of the present invention. The following content is only the implementation details provided for the convenience of understanding and is not necessary for the implementation of this solution.

[0027] like Figure 1 As shown, in step 101, the current value of each phase circuit in the three-phase circuit is obtained in real time.

[0028] In some embodiments, the thermal element is disposed only near the MOS of the target phase; or, the thermal element is disposed near the MOS of each phase in the three-phase circuit.

[0029] In some specific embodiments, Figure 2 As shown, the target phase is the U phase in the three-phase electricity, the first phase is the V phase in the three-phase electricity, and the second phase is the W phase in the three-phase electricity. It should be noted that the target phase, the first phase, and the second phase can be specifically a specific phase in the three-phase electricity and can be adjusted according to actual production or application requirements, and this application does not limit this.

[0030] In step 102, the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current is determined.

[0031] In some specific embodiments, taking the target phase as the U phase in the three-phase electricity, the first phase as the V phase in the three-phase electricity, and the second phase as the W phase in the three-phase electricity as an example, the determination of the magnitude relationship between the current value of the target phase in the three-phase current and the current values ​​of the remaining two phases is specifically as follows: obtaining the target phase current value and the first phase current value, and comparing the magnitude of the target phase current value and the first phase current value; obtaining the target phase current value and the second phase current value, and comparing the magnitude of the target phase current value and the second phase current value. That is, comparing I U with I V The size of I U with I W size.

[0032] In some embodiments, the determining of the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current includes: detecting the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases multiple times at preset time intervals; before determining whether the MOS temperature satisfies the second preset condition based on the MOS temperature detected by the thermistor, the method further includes: determining whether the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times; if the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times, obtaining the MOS temperature detected by the thermistor; if the number of times the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition does not reach the preset number of times, continuing to obtain the MOS temperature detected by the thermistor and the current value of each phase circuit in the three-phase circuit and determining the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current.

[0033] In step 103, if the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases satisfies a first preset condition, a protection threshold parameter of the device is adjusted.

[0034] In some embodiments, the first preset condition includes: the current value of the target phase is smaller than the current values ​​of the other two phases; the protection threshold parameter of the adjustment device includes: lowering the protection threshold of the MOS, and / or lowering the startup protection parameter value of the device.

[0035] In some specific embodiments, taking the target phase as the U phase in the three-phase power, the first phase as the V phase in the three-phase power, and the second phase as the W phase in the three-phase power as an example, the NTC is arranged near the MOS of the U phase. U <I V , and I U <I W , then reduce the protection threshold of MOS; if I U >I V , and IU >I W , the protection threshold of MOS does not change. It should be noted that when the target phase is other phases, those skilled in the art can understand that the method of judging the magnitude of the current of the target phase and the current of the other two phases and adjusting the protection threshold parameters is similar to the above judgment and adjustment method, that is, taking the target phase as the V phase in the three-phase electricity, the first phase as the U phase in the three-phase electricity, and the second phase as the W phase in the three-phase electricity as an example, if I V <I U , and I V <I W , then the protection threshold of MOS is reduced; taking the target phase as the W phase in the three-phase power, the first phase as the U phase in the three-phase power, and the second phase as the V phase in the three-phase power as an example, if I V <I U , and I V <I W , then the protection threshold of MOS is reduced.

[0036] In some embodiments, the startup protection parameter value of the device includes the startup peak voltage of the device and / or the startup peak current of the device. It should be noted that the startup protection parameter value of the device can also be the value of other protection parameters related to the startup process, and this application does not limit this.

[0037] In some specific embodiments, taking the target phase as the U phase in the three-phase power, the first phase as the V phase in the three-phase power, and the second phase as the W phase in the three-phase power as an example, the NTC is arranged near the MOS of the U phase. U <I V , and I U <I W , then reduce the startup protection parameter value of the equipment; if I U >I V , and I U >I W , the startup protection parameter value of the device does not change. It should be noted that when the target phase is other phases, those skilled in the art can understand that the method of judging the magnitude of the current of the target phase and the current of the other two phases and adjusting the protection threshold parameter is similar to the above judgment and adjustment method, that is, taking the target phase as the V phase in the three-phase electricity, the first phase as the U phase in the three-phase electricity, and the second phase as the W phase in the three-phase electricity as an example, if I V <I U , and I V <I W , then reduce the startup protection parameter value of the equipment; take the target phase as the W phase in the three-phase power, the first phase as the U phase in the three-phase power, and the second phase as the V phase in the three-phase power as an example, if I V <I U , and I V <I W, then reduce the startup protection parameter value of the device.

[0038] In step 104, the MOS temperature detected by the thermistor is acquired in real time.

[0039] In some specific embodiments, the thermistor is specifically a thermistor, and further, a negative temperature coefficient thermistor (NTC) may be used. It should be noted that those skilled in the art may replace the thermistor with a positive temperature coefficient thermistor (PTC) or a critical temperature coefficient thermistor (CTR) according to actual work requirements and make adaptive adjustments according to actual applications, and this application does not limit this.

[0040] In step 105, it is determined whether the MOS temperature meets a second preset condition according to the MOS temperature detected by the thermistor, and the second preset condition is determined by the protection threshold parameter.

[0041] In step 106, if the MOS temperature meets the second preset condition, the temperature protection function of the device is triggered.

[0042] In some embodiments, the temperature protection function includes an audible and visual alarm function.

[0043] In some embodiments, the second preset condition includes: the temperature change rate reaches a preset threshold; the temperature change rate is the difference between the MOS temperature and a preset temperature value.

[0044] In some specific embodiments, the temperature change rate is determined based on the MOS temperature values ​​detected by the thermistor multiple times. For example, the temperature value of the MOS is detected at a preset time interval, and a temperature value group is recorded, wherein the temperature value group includes a preset number of temperature value data. The change rate of the temperature value group is calculated by a microcontroller unit (MCU). The temperature change rate can be calculated as follows: temperature change rate g = (T N -T1)÷(t×N). Among them, T N is the last recorded MOS temperature value in the temperature value group, T1 is the first MOS temperature value recorded in the temperature value group, t is the preset duration, and N is the number of temperature value data included in a temperature value group. It should be noted that the temperature change rate can be set accordingly according to actual production and application requirements, and this application does not limit it here.

[0045] Specifically, Figure 3As shown, in an embodiment of the present application, the preset threshold value of the temperature change rate is 0.08, the preset duration is 10ms, and a temperature value group includes 10 MOS temperature value data. The temperature change rate can be calculated according to the above formula as g=0.1. At this time, the temperature change rate is greater than the preset threshold value of the temperature change rate, that is, the second preset condition is met, and the temperature protection function of the device is triggered. By calculating the temperature change rate and triggering the temperature protection function when the temperature change rate exceeds the preset threshold value, the change of the MOS temperature can be predicted in advance, which is conducive to protection before the temperature reaches the MOS limit temperature, protecting the life of the component, thereby increasing the life of the entire device, and providing expected warnings to users using the device to check the device status in time.

[0046] In some embodiments, the second preset condition also includes: the MOS temperature reaches a maximum temperature threshold; wherein the maximum temperature threshold is determined based on the highest MOS temperature detected by the thermistor during device pre-operation, or the maximum temperature threshold is a preset temperature threshold.

[0047] In some embodiments, in order to improve the accuracy of the working condition judgment, the second preset condition can be considered to be met only when both the temperature change rate reaches the preset threshold and the MOS temperature reaches the maximum temperature threshold. That is, when only the temperature change rate reaches the preset threshold, or only the MOS temperature reaches the maximum temperature threshold, and when the temperature change rate does not reach the preset threshold and the MOS temperature does not reach the maximum temperature threshold, the temperature protection function of the device is not triggered.

[0048] It should be noted that the preset threshold of the temperature change rate and the maximum temperature threshold of the MOS temperature can be set in advance during the equipment pre-operation according to the actual operating conditions and actual production needs; in addition, the conditions for triggering the temperature protection function of the equipment can be adjusted according to actual production needs. Those skilled in the art can understand that when the temperature change rate requirement is high or the MOS temperature requirement is high, only one requirement can be used as the second preset condition for the start-up control condition of the equipment temperature protection, and this application does not limit this.

[0049] In some embodiments, the thermistor is only arranged near the MOS of the target phase; or, the thermistor is arranged near the MOS of each phase in the three-phase circuit. Taking the thermistor as NTC as an example, if the thermistor is only arranged near the MOS of the target phase, the NTC can be arranged near the MOS of the U phase, or the NTC can be arranged near the MOS of the V phase, or the NTC can be arranged near the MOS of the W phase. It should be noted that when the thermistor is only arranged near the MOS of the target phase, those skilled in the art can change the specific position of the NTC layout according to actual production needs, and it is necessary to ensure that the temperature detected by the NTC is the temperature of the MOS of the target phase. This application is not limited here. In another case, such as Figure 4 As shown, the thermistor is arranged near the MOS of each phase in the three-phase circuit, different thermistors are arranged near the MOS of each phase, and at least one thermistor is arranged near the MOS of each phase for temperature detection. Taking the thermistor as NTC as an example, the three NTCs are arranged near the MOS of U phase, the MOS of V phase and the MOS of W phase, respectively, to detect the temperature of the MOS on U phase, V phase and W phase. It should be noted that the distance between the NTC and the MOS to be detected is much smaller than the distance between the NTC and the MOS of the remaining phases, so as to avoid the inability to accurately detect the temperature of the target MOS due to unreasonable layout distance, resulting in a decrease in the accuracy of the temperature detection result and erroneous triggering of the temperature protection function of the equipment. Figure 5 As shown, if each phase includes multiple MOSs, thermistors may be arranged near all MOSs for temperature detection according to the actual number of MOSs to avoid the problem of low accuracy of the temperature detection result of one MOS.

[0050] In an embodiment of the present invention, a judgment is made based on the magnitude relationship of the current values ​​of the three-phase currents to determine whether the current operating condition is a condition that requires adjustment of the temperature protection trigger; and further, the temperature protection is triggered based on whether the temperature of the MOS reaches the adjusted temperature protection trigger condition. That is, the present application determines whether the current operating condition requires adjustment of the temperature protection trigger condition based on the current values ​​of the three-phase currents, and further determines whether to trigger the temperature protection based on the actual MOS temperature conditions, so that the temperature protection trigger condition dynamically fits the actual operating condition requirements, thereby improving the flexibility of the temperature protection trigger, making the temperature protection trigger more timely, effectively avoiding MOS damage, and increasing the service life of the equipment.

[0051] The steps of the above method are divided only for the purpose of clear description. When implemented, they can be combined into one step or some steps can be split and decomposed into multiple steps. As long as they include the same logical relationship, they are all within the scope of protection of this patent; adding insignificant modifications to the algorithm or process or introducing insignificant designs without changing the core design of the algorithm and process are all within the scope of protection of this patent.

[0052] In addition, the examples mentioned in the above embodiments can be freely combined, and any combination can be understood as an embodiment. The "embodiment" or "example" appearing in various positions in the specification does not necessarily refer to the same embodiment, nor is it an independent or alternative embodiment that is mutually exclusive with other embodiments. It can be understood by those skilled in the art that the embodiments described herein can be combined with other embodiments.

[0053] In summary, specific embodiments of the subject matter have been described. Other embodiments are within the scope of the appended claims. In some cases, the actions recited in the claims can be performed in a different order and still achieve the desired results. In addition, the processes depicted in the accompanying drawings do not necessarily require the specific order or sequential order shown to achieve the desired results.

[0054] In the description of the embodiments of the present application, the technical terms "first", "second", etc. are only used to distinguish different objects, and cannot be understood as indicating or implying relative importance or implicitly indicating the number, specific order or primary and secondary relationship of the indicated technical features. In the description of the embodiments of the present application, the meaning of "multiple" is more than two, unless otherwise clearly and specifically defined.

[0055] Another embodiment of the present invention relates to a protection setting adjustment system, such as Figure 6 As shown, including:

[0056] The current value acquisition module is used to obtain the current value of each phase circuit in the three-phase circuit in real time.

[0057] In some embodiments, the thermal element is disposed only near the MOS of the target phase; or, the thermal element is disposed near the MOS of each phase in the three-phase circuit.

[0058] The first preset condition judgment module is used to judge the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current.

[0059] In some embodiments, the determining of the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current includes: detecting the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases multiple times at a preset time interval. A protection threshold parameter adjustment module is used to adjust the protection threshold parameter of the device when the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases meets a first preset condition.

[0060] In some embodiments, the first preset condition includes: the current value of the target phase is smaller than the current values ​​of the other two phases; the protection threshold parameter of the adjustment device includes: lowering the protection threshold of the MOS, and / or lowering the startup protection parameter value of the device.

[0061] In some embodiments, the startup protection parameter value of the device includes the startup peak voltage of the device and / or the startup peak current of the device. It should be noted that the startup protection parameter value of the device can also be the value of other protection parameters related to the startup process, and this application does not limit this.

[0062] The temperature value acquisition module is used to obtain the MOS temperature detected by the thermistor in real time.

[0063] The second preset condition judgment module is used to judge whether the MOS temperature meets a second preset condition according to the MOS temperature detected by the thermistor, and the second preset condition is determined by the protection threshold parameter.

[0064] A temperature protection module is used to trigger the temperature protection function of the device when the MOS temperature meets the second preset condition.

[0065] In some embodiments, the second preset condition includes: the temperature change rate reaches a preset threshold; the temperature change rate is the difference between the MOS temperature and a preset temperature value.

[0066] In some embodiments, the second preset condition also includes: the MOS temperature reaches a maximum temperature threshold; wherein the maximum temperature threshold is determined based on the highest MOS temperature detected by the thermistor during device pre-operation, or the maximum temperature threshold is a preset temperature threshold.

[0067] In some embodiments, before determining whether the MOS temperature satisfies a second preset condition based on the MOS temperature detected by the thermistor, the method further includes: determining whether the number of times that the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times; if the number of times that the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition reaches a preset number of times, obtaining the MOS temperature detected by the thermistor; if the number of times that the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases satisfies the first preset condition does not reach the preset number of times, continuing to obtain the MOS temperature detected by the thermistor and the current value of each phase circuit in the three-phase circuit and determining the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current.

[0068] In an embodiment of the present invention, a judgment is made based on the magnitude relationship of the current values ​​of the three-phase currents to determine whether the current operating condition meets the operating condition that requires adjustment of the temperature protection trigger; and further, the temperature protection is triggered based on whether the temperature of the MOS reaches the adjusted temperature protection trigger condition. That is, the present application determines whether the current operating condition requires adjustment of the temperature protection trigger condition based on the current values ​​of the three-phase currents, and further determines whether to trigger the temperature protection based on the actual MOS temperature conditions, so that the temperature protection trigger condition dynamically fits the actual operating condition requirements, thereby improving the flexibility of the temperature protection trigger, making the temperature protection trigger more timely, effectively avoiding MOS damage, and increasing the service life of the equipment.

[0069] It is not difficult to find that this embodiment is a system embodiment corresponding to the above method embodiment, and this embodiment can be implemented in conjunction with the above method embodiment. The relevant technical details mentioned in the above method embodiment are still valid in this embodiment, and in order to reduce repetition, they are not repeated here. Accordingly, the relevant technical details mentioned in this embodiment can also be applied in the above method embodiment.

[0070] It is worth mentioning that all modules involved in this embodiment are logic modules. In practical applications, a logic unit can be a physical unit, a part of a physical unit, or a combination of multiple physical units. In addition, in order to highlight the innovative part of the present invention, this embodiment does not introduce units that are not closely related to solving the technical problem proposed by the present invention, but this does not mean that there are no other units in this embodiment.

[0071] Another embodiment of the present invention relates to an apparatus, such as Figure 7As shown, it includes at least one processor; and a memory connected to the at least one processor in communication; wherein the memory stores instructions that can be executed by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the protection setting adjustment method as described above.

[0072] Among them, the memory and the processor are connected in a bus manner, and the bus may include any number of interconnected buses and bridges, and the bus connects various circuits of one or more processors and memories together. The bus can also connect various other circuits such as peripherals, voltage regulators, and power management circuits, which are well known in the art and are therefore not further described herein. The bus interface provides an interface between the bus and the transceiver. The transceiver can be one element or multiple elements, such as multiple receivers and transmitters, providing a unit for communicating with various other devices on a transmission medium. The data processed by the processor is transmitted on a wireless medium via an antenna, and further, the antenna also receives data and transmits the data to the processor.

[0073] The processor is responsible for managing the bus and general processing, and can also provide various functions, including timing, peripheral interfaces, voltage regulation, power management, and other control functions. Memory can be used to store data used by the processor when performing operations.

[0074] Another embodiment of the present invention relates to a computer-readable storage medium storing a computer program, which implements the above method embodiment when executed by a processor.

[0075] That is, those skilled in the art can understand that all or part of the steps in the above-mentioned embodiment method can be completed by instructing the relevant hardware through a program, and the program is stored in a storage medium, including several instructions to enable a device (which can be a single-chip microcomputer, chip, etc.) or a processor to execute all or part of the steps of the method described in each embodiment of the present application. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk and other media that can store program codes.

[0076] Those skilled in the art will appreciate that the above embodiments are specific embodiments for implementing the present invention, and that in actual applications, various changes may be made in form and detail without departing from the spirit and scope of the present invention.

Claims

1. A protection setting adjustment method, characterized in that: The method comprises: Obtain the current value of each phase circuit in the three-phase circuit in real time; Determine the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current; If the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases satisfies a first preset condition, adjusting a protection threshold parameter of the device; Get the MOS temperature detected by thermistor in real time; According to the MOS temperature detected by the thermistor, determining whether the MOS temperature meets a second preset condition, where the second preset condition is determined by the protection threshold parameter; If the MOS temperature meets the second preset condition, the temperature protection function of the device is triggered.

2. The protection setting adjustment method according to claim 1, characterized in that: The first preset condition includes: The current value of the target phase is smaller than the current values ​​of the other two phases; The adjusting the protection threshold parameter of the device includes: lowering the protection threshold of the MOS and / or lowering the startup protection parameter value of the device.

3. The protection setting adjustment method according to claim 2, characterized in that: The startup protection parameter value of the device includes a startup peak voltage of the device and / or a startup peak current of the device.

4. The protection setting adjustment method according to claim 1, characterized in that: The second preset condition includes: the temperature change rate reaches a preset threshold; the temperature change rate is the difference between the MOS temperature and a preset temperature value.

5. The protection setting adjustment method according to claim 4, characterized in that: The second preset condition also includes: the MOS temperature reaches a maximum temperature threshold; The maximum temperature threshold is determined according to the highest MOS temperature detected by the thermistor during device pre-operation, or the maximum temperature threshold is a preset temperature threshold.

6. The protection setting adjustment method according to claim 1, characterized in that: The thermal element is arranged only near the MOS of the target phase; or, the thermal element is arranged near the MOS of each phase in the three-phase circuit.

7. The protection setting adjustment method according to claim 1, characterized in that: The determining of the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current comprises: detecting the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases multiple times at a preset time interval; Before judging whether the MOS temperature meets a second preset condition according to the MOS temperature detected by the thermistor, the method further includes: Determine whether the number of times that the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases satisfies the first preset condition reaches a preset number of times; If the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases satisfies the first preset condition for a preset number of times, the MOS temperature detected by the thermistor is obtained; If the number of times that the magnitude relationship between the current value of the target phase and the current values ​​of the other two phases meets the first preset condition does not reach the preset number of times, continue to obtain the MOS temperature detected by the thermistor and the current value of each phase circuit in the three-phase circuit and determine the magnitude relationship between the current value of the target phase in the three-phase current and the current values ​​of the other two phases.

8. A protection setting adjustment system, characterized in that: include: A current value acquisition module is used to obtain the current value of each phase circuit in the three-phase circuit in real time; A first preset condition judgment module, used to judge the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases in the three-phase current; A protection threshold parameter adjustment module, used for adjusting the protection threshold parameter of the device when the magnitude relationship between the current value of the target phase and the current values ​​of the remaining two phases meets a first preset condition; The temperature value acquisition module is used to obtain the MOS temperature detected by the thermistor in real time; A second preset condition judgment module, used for judging whether the MOS temperature meets a second preset condition according to the MOS temperature detected by the thermistor, wherein the second preset condition is determined by the protection threshold parameter; A temperature protection module is used to trigger the temperature protection function of the device when the MOS temperature meets the second preset condition.

9. A device, characterized in that: include: at least one processor; and, a memory communicatively coupled to the at least one processor; The memory stores instructions executable by the at least one processor, and the instructions are executed by the at least one processor so that the at least one processor can execute the steps in the protection setting adjustment method as described in any one of claims 1 to 7.

10. A computer-readable storage medium storing a computer program, characterized in that: When the computer program is executed by a processor, the steps of the protection setting adjustment method according to any one of claims 1 to 7 are implemented.

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