Interleaved parallel three-level three-switch rectifier topology circuit

Abstract

The application relates to the technical field of three-level converter, in particular to an interlaced parallel three-level three-switch rectifier topology circuit, which comprises first to third rectifier modules, a first capacitor and a second capacitor, wherein the first rectifier module comprises a first diode assembly and a first switch assembly, the first diode assembly comprises first to fourth diodes; the second rectifier module comprises a second diode assembly and a second switch assembly, the second diode assembly comprises fifth to eighth diodes; and the third rectifier module comprises a third diode assembly and a third switch assembly, the third diode assembly comprises ninth to tenth diodes. Thus, the problem that each phase circuit of the interlaced parallel Vienna rectifier topology is composed of four power switch tubes and the economic burden is increased is solved. The number of switch tube devices is reduced, and the economic cost is reduced.

Description

Technical Field

[0001] This application relates to the field of three-level converter technology, and in particular to an interleaved parallel three-level three-switch rectifier topology circuit. Background Technology

[0002] Three-level converters, as the simplest multilevel converters, have pointed the way for the development of high-capacity converters. Three-level converters offer advantages such as low switching losses, low voltage stress, good output harmonic characteristics, and low filter component requirements, gradually replacing two-level converters and finding widespread application in low-to-medium voltage, high-power applications such as industrial power supplies, electric vehicles, photovoltaic power generation, and rail transportation. The Vienna rectifier topology, a related technology, consists of four diodes and one power switch forming a bidirectional switch. Another Vienna rectifier topology improves upon the traditional bidirectional switch by replacing it with two back-to-back power switches. While retaining the advantages of the Vienna topology, it utilizes high-frequency modulation to reduce filter size and increase system power density. Due to the high modularity of interleaved parallel three-level rectifiers, which can improve inverter current output capability, interleaved parallel three-level Vienna rectifiers are widely used in low-to-medium voltage, high-power applications. However, the interleaved parallel Vienna rectifier topology requires four power switches per phase, increasing the economic burden. Summary of the Invention

[0003] This application provides an interleaved parallel three-level three-switch rectifier topology to solve the problem that each phase of the interleaved parallel Vienna rectifier topology consists of four power switching transistors, which increases the economic burden.

[0004] The first aspect of this application provides an interleaved parallel three-level three-switch rectifier topology circuit, including: a first rectifier module to a third rectifier module, a first capacitor, and a second capacitor, wherein...

[0005] The first rectifier module includes a first diode assembly and a first switching assembly. The first diode assembly includes first to fourth diodes. The connection node between the first and third diodes is connected to the first output terminal of the first phase voltage and the first input terminal of the first switching assembly, respectively. The connection node between the second and fourth diodes is connected to the second output terminal of the first phase voltage and the second input terminal of the first switching assembly, respectively. The output terminal of the first switching assembly is connected to the connection node between the first and second capacitors. The cathodes of the first and second diodes are connected, the anodes of the first and third diodes are connected, the anodes of the third and fourth diodes are connected, and the anodes of the second and fourth diodes are connected. The second rectifier module includes a second diode assembly and a second switching assembly. The second diode assembly includes fifth to eighth diodes. The connection node between the fifth and seventh diodes is connected to the first output terminal of the second phase voltage and the first input terminal of the second switching assembly, respectively. The connection node between the sixth and eighth diodes is connected to the second output terminal of the second phase voltage and the second input terminal of the second switching assembly, respectively. The output terminal of the second switching assembly is connected to the connection node between the first capacitor and the second capacitor. The cathode of the fifth diode is connected to the cathode of the second diode and the cathode of the sixth diode, respectively. The anode of the fifth diode is connected to the anode of the seventh diode. The anode of the seventh diode is connected to the anode of the fourth diode and the anode of the eighth diode, respectively. The cathode of the eighth diode is connected to the cathode of the sixth diode. The third rectifier module includes a third diode assembly and a third switching assembly. The third diode assembly includes a ninth to a twelfth diode. The connection node between the ninth and eleventh diodes is connected to the first output terminal of the third phase voltage and the first input terminal of the third switching assembly, respectively. The connection node between the tenth and twelfth diodes is connected to the second output terminal of the third phase voltage and the second input terminal of the third switching assembly, respectively. The output terminal of the third switching assembly is connected to the connection node between the first capacitor and the second capacitor. One end of the first capacitor is connected to the cathode of the tenth diode, and the other end of the first capacitor is connected to one end of the second capacitor. The other end of the second capacitor is connected to the anode of the twelfth diode.

[0006] Optionally, the first switching assembly includes: a first transistor unit, a thirteenth diode, and a fourteenth diode, wherein a first terminal of the first transistor unit is connected to the connection node between the first diode and the third diode, a second terminal of the first transistor unit is connected to the connection node between the second diode and the fourth diode, a third terminal of the first transistor unit is connected to the anode of the thirteenth diode, and a fourth terminal of the first transistor unit is connected to the cathode of the fourteenth diode; the cathode of the thirteenth diode is connected to the anode of the fourteenth diode, and both the cathode of the thirteenth diode and the anode of the fourteenth diode are connected to the other end of the first capacitor and one end of the second capacitor.

[0007] Optionally, the first transistor unit includes: a first transistor, a second transistor, a third transistor, a fifteenth diode, and a sixteenth diode, wherein the emitter of the first transistor is connected to the emitter of the second transistor, the anode of the thirteenth diode, and the anode of the fifteenth diode, respectively; the collector of the first transistor is connected to the connection node between the first and third diodes and the cathode of the sixteenth diode, respectively; the collector of the second transistor is connected to the cathode of the fourteenth diode, the collector of the third transistor, and the cathode of the sixteenth diode, respectively; and the emitter of the third transistor is connected to the anode of the sixteenth diode and the connection node between the second and fourth diodes, respectively.

[0008] Optionally, the second switching assembly includes a second transistor unit, a seventeenth diode, and an eighteenth diode. The first terminal of the second transistor unit is connected to the connection node between the fifth and seventh diodes; the second terminal of the second transistor unit is connected to the connection node between the sixth and eighth diodes; the third terminal of the second transistor unit is connected to the anode of the seventeenth diode; and the fourth terminal of the second transistor unit is connected to the cathode of the eighteenth diode. The cathode of the seventeenth diode is connected to the anode of both the eighteenth and fourteenth diodes. Both the cathode of the seventeenth diode and the anode of the eighteenth diode are connected to the other end of the first capacitor and one end of the second capacitor.

[0009] Optionally, the second transistor unit includes a fourth transistor, a fifth transistor, a sixth transistor, a nineteenth diode, and a twentieth diode. The emitter of the fourth transistor is connected to the emitter of the fifth transistor, the anode of the seventeenth diode, and the anode of the nineteenth diode, respectively. The collector of the fourth transistor is connected to the connection node between the fifth and seventh diodes and the cathode of the nineteenth diode, respectively. The collector of the fifth transistor is connected to the cathode of the eighteenth diode, the collector of the sixth transistor, and the cathode of the twentieth diode, respectively. The emitter of the sixth transistor is connected to the connection node between the sixth and eighth diodes and the anode of the twentieth diode, respectively.

[0010] Optionally, the three-switch assembly includes a third transistor unit, a twenty-first diode, and a twenty-second diode. The first terminal of the third transistor unit is connected to the connection node between the ninth and eleventh diodes; the second terminal of the third transistor unit is connected to the connection node between the tenth and twelfth diodes; the third terminal of the third transistor unit is connected to the anode of the twenty-first diode; and the fourth terminal of the third transistor unit is connected to the cathode of the twenty-second diode. The cathode of the twenty-first diode is connected to the anodes of the eighteenth and twenty-second diodes. Both the cathode of the twenty-first diode and the anode of the twenty-second diode are connected to the other end of the first capacitor and one end of the second capacitor.

[0011] Optionally, the third transistor unit includes a seventh transistor, an eighth transistor, a ninth transistor, a twenty-third diode, and a twenty-fourth diode. The emitter of the seventh transistor is connected to the emitter of the eighth transistor, the anode of the twenty-third diode, and the anode of the twenty-first diode. The collector of the seventh transistor is connected to the cathode of the twenty-third diode and the connection node between the ninth and eleventh diodes. The collector of the eighth transistor is connected to the cathode of the twenty-second diode, the collector of the ninth transistor, and the cathode of the twenty-fourth diode. The emitter of the ninth transistor is connected to the connection node between the tenth and twelfth diodes and the anode of the twenty-fourth diode.

[0012] Optionally, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a first inductor and a second inductor, wherein one end of the first inductor is connected to the first output terminal of the first phase voltage, and the other end of the first inductor is connected to the connection node between the first diode and the third diode, the collector of the first transistor, and the cathode of the fifteenth diode; one end of the second inductor is connected to the second output terminal of the first phase voltage and one end of the first inductor, and the other end of the second inductor is connected to the connection node between the second diode and the fourth diode, the emitter of the third transistor, and the anode of the sixteenth diode.

[0013] Optionally, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a third inductor and a fourth inductor, wherein one end of the third inductor is connected to the first output terminal of the second phase voltage, and the other end of the third inductor is connected to the connection node between the fifth and seventh diodes, the collector of the fourth transistor, and the cathode of the nineteenth diode; one end of the fourth inductor is connected to one end of the third inductor and the second output terminal of the second phase voltage, and the other end of the fourth inductor is connected to the connection node between the sixth and eighth diodes, the emitter of the sixth transistor, and the anode of the twentieth diode.

[0014] Optionally, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a fifth inductor and a sixth inductor, wherein one end of the fifth inductor is connected to the first output terminal of the third phase voltage, and the other end of the fifth inductor is connected to the connection node between the ninth and eleventh diodes, the collector of the seventh transistor, and the cathode of the twenty-third diode; one end of the sixth inductor is connected to the second output terminal of the third phase voltage and one end of the fifth inductor, and the other end of the sixth inductor is connected to the connection node between the tenth and twelfth diodes, the emitter of the ninth transistor, and the anode of the twenty-fourth diode.

[0015] The above embodiments include first to third rectifier modules, a first capacitor, and a second capacitor. The first rectifier module includes a first diode assembly and a first switching assembly, the first diode assembly including first to fourth diodes; the second rectifier module includes a second diode assembly and a second switching assembly, the second diode assembly including fifth to eighth diodes; the third rectifier module includes a third diode assembly and a third switching assembly, the third diode assembly including ninth to twelfth diodes. This solves the problem that each phase circuit of the interleaved parallel Vienna rectifier topology consists of four power switches, increasing the economic burden, by reducing the number of switching devices and lowering the economic cost.

[0016] Additional aspects and advantages of this application will be set forth in part in the description which follows, and in part will be obvious from the description, or may be learned by practice of this application. Attached Figure Description

[0017] The above and / or additional aspects and advantages of this application will become apparent and readily understood from the following description of the embodiments taken in conjunction with the accompanying drawings, wherein:

[0018] Figure 1 This is an example diagram of an interleaved parallel three-level three-switch rectifier topology circuit according to an embodiment of this application;

[0019] Figure 2 This is a schematic diagram of the single-phase equivalent circuit of an interleaved parallel three-level three-switch rectifier according to an embodiment of this application in switch state 1;

[0020] Figure 3 This is a schematic diagram of the single-phase equivalent circuit of an interleaved parallel three-level three-switch rectifier according to an embodiment of this application when in switch state 2 and current is flowing out.

[0021] Figure 4 This is a schematic diagram of the single-phase equivalent circuit of an interleaved parallel three-level three-switch rectifier according to an embodiment of this application in switch state 2 and when current flows in;

[0022] Figure 5 This is a schematic diagram of the single-phase equivalent circuit of an interleaved parallel three-level three-switch rectifier according to an embodiment of this application when in switch state 3 and current is flowing out.

[0023] Figure 6 This is a schematic diagram of a dual-carrier phase-shifted 180° modulation method for an interleaved parallel rectifier according to an embodiment of this application;

[0024] Figure 7 This is a schematic diagram of the control signals for the power transistor Sx3 according to an embodiment of this application;

[0025] Figure 8 This is a schematic diagram of the simulation results of the output voltage Udc according to an embodiment of this application;

[0026] Figure 9 This is a schematic diagram of the output current simulation results according to an embodiment of this application;

[0027] Figure 10 This is a schematic diagram of the capacitor voltage simulation results according to an embodiment of this application;

[0028] Figure 11 This is a schematic diagram of the simulation results of the output current ripple according to an embodiment of this application. Detailed Implementation

[0029] The embodiments of this application are described in detail below. Examples of these embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and intended to explain this application, and should not be construed as limiting this application.

[0030] The following description, with reference to the accompanying drawings, describes an embodiment of the interleaved parallel three-level three-switch rectifier topology of this application. Addressing the issue mentioned in the background art where each phase of the interleaved parallel Vienna rectifier topology consists of four power switches, increasing the economic burden, this application provides an interleaved parallel three-level three-switch rectifier topology. This circuit includes first to third rectifier modules, a first capacitor, and a second capacitor. The first rectifier module includes a first diode assembly and a first switch assembly, the first diode assembly including first to fourth diodes; the second rectifier module includes a second diode assembly and a second switch assembly, the second diode assembly including fifth to eighth diodes; and the third rectifier module includes a third diode assembly and a third switch assembly, the third diode assembly including ninth to twelfth diodes. This solves the problem of each phase of the interleaved parallel Vienna rectifier topology consisting of four power switches, increasing the economic burden, reducing the number of switching devices, and lowering the economic cost.

[0031] Specifically, Figure 1 This is a schematic diagram of an interleaved parallel three-level three-switch rectifier topology circuit provided in an embodiment of this application.

[0032] like Figure 1 As shown, the interleaved parallel three-level three-switch rectifier topology includes: first to third rectifier modules, a first capacitor C1, and a second capacitor C2, wherein...

[0033] The first rectifier module includes a first diode assembly and a first switching assembly. The first diode assembly includes first to fourth diodes. The connection node between the first diode Da1 and the third diode Da3 is connected to the first output terminal of the first phase voltage Uga and the first input terminal of the first switching assembly, respectively. The connection node between the second diode Da2 and the fourth diode Da4 is connected to the second output terminal of the first phase voltage Uga and the second input terminal of the first switching assembly, respectively. The output terminal of the first switching assembly is connected to the connection node between the first capacitor C1 and the second capacitor C2. The cathode of the first diode Da1 is connected to the cathode of the second diode Da2. The anode of diode Da2 is connected to the cathode of diode Da3, and the anode of diode Da3 is connected to the anode of diode Da4. The anode of diode Da2 is connected to the cathode of diode Da4. The second rectifier module includes a second diode assembly and a second switching assembly. The second diode assembly includes diodes Db4 from the fifth to the eighth. The connection point between diodes Db1 and Db3 is connected to the first output terminal of the second phase voltage Ugb and the first input terminal of the second switching assembly, respectively. The connection point between diodes Db2 and Db4 is connected to the second output terminal of the second phase voltage Ugb and the second input terminal of the second switching assembly, respectively. The output terminal of the second switching assembly is connected to the connection node between the first capacitor C1 and the second capacitor C2. The cathode of the fifth diode Db1 is connected to the cathodes of the second diode Da2 and the sixth diode Db2, respectively. The anode of the fifth diode Db1 is connected to the anode of the seventh diode Db3, and the anode of the seventh diode Db3 is connected to the anodes of the fourth diode Da4 and the eighth diode Db4, respectively. The cathode of the eighth diode Db4 is connected to the cathode of the sixth diode Db2. The third rectifier module includes a third diode assembly and a third switching assembly. The third diode assembly includes diodes Dc1 to Dc4, from the ninth diode to the eleventh and twelfth diodes. The connection node between diode Dc1 and eleventh diode Dc3 is connected to the first output terminal of the third phase voltage Ugc and the first input terminal of the third switching assembly, respectively. The connection node between tenth diode Dc2 and eleventh diode Dc4 is connected to the second output terminal of the third phase voltage Ugc and the second input terminal of the third switching assembly, respectively. The output terminal of the third switching assembly is connected to the connection node between first capacitor C1 and second capacitor C2. One end of first capacitor C1 is connected to the cathode of tenth diode Dc2, and the other end of first capacitor C1 is connected to one end of second capacitor C2. The other end of second capacitor C2 is connected to the anode of eleventh diode Dc4.

[0034] It should be noted that the first output terminal of the first phase voltage Uga is connected to one end of the first inductor La1, and the first output terminal of the first phase voltage Uga is connected to one end of the second inductor La2. The first input terminal of the first switching component can be understood as the collector of the first transistor Sa1, and the second input terminal of the first switching component can be understood as the emitter of the third transistor Sa2. The first output terminal of the second phase voltage Ugb is connected to one end of the third inductor Lb1, and the second output terminal of the second phase voltage Ugb is connected to one end of the fourth inductor Lb2. The first input terminal of the second switching component can be understood as the collector of the fourth transistor Sb1, and the second input terminal of the second switching component can be understood as the emitter of the sixth transistor Sb2. The first output terminal of the third phase voltage Ugc is connected to one end of the fifth inductor Lc1, and the second output terminal of the third phase voltage Ugc is connected to one end of the sixth inductor Lc2. The first input terminal of the third switching component can be understood as the collector of the seventh transistor Sc1, and the second input terminal of the second switching component can be understood as the emitter of the ninth transistor Sc2.

[0035] Optionally, in some embodiments, the first switching assembly includes: a first transistor unit, a thirteenth diode Da5, and a fourth diode Da6, wherein the first end of the first transistor unit is connected to the connection node between the first diode Da1 and the third diode Da3, the second end of the first transistor unit is connected to the connection node between the second diode Da2 and the fourth diode Da4, the third end of the first transistor unit is connected to the anode of the thirteenth diode Da5, and the fourth end of the first transistor unit is connected to the cathode of the fourth diode Da6; the cathode of the thirteenth diode Da5 is connected to the anode of the fourth diode Da6, and both the cathode of the thirteenth diode Da5 and the anode of the fourth diode Da6 are connected to the other end of the first capacitor C1 and one end of the second capacitor C2.

[0036] It should be noted that the first end of the first transistor unit can be understood as the collector of the first transistor Sa1, the second end of the first transistor unit can be understood as the emitter of the third transistor Sa2, the third end of the first transistor unit can be understood as the cathode of the thirteenth diode Da5, and the fourth end of the first transistor unit can be understood as the anode of the fourth diode Da6.

[0037] Optionally, in some embodiments, the first transistor unit includes: a first transistor Sa1, a second transistor Sa3, a third transistor Sa2, a fifteenth diode, and a sixteenth diode, wherein the emitter of the first transistor Sa1 is connected to the emitter of the second transistor Sa3, the anode of the thirteenth diode Da5, and the anode of the fifteenth diode, respectively; the collector of the first transistor Sa1 is connected to the connection node between the first diode Da1 and the third diode Da3, and the cathode of the sixteenth diode, respectively; the collector of the second transistor Sa3 is connected to the cathode of the fourth diode Da6, the collector of the third transistor Sa2, and the cathode of the sixteenth diode, respectively; and the emitter of the third transistor Sa2 is connected to the anode of the sixteenth diode, and the connection node between the second diode Da2 and the fourth diode Da4, respectively.

[0038] Optionally, in some embodiments, the second switching assembly includes a second transistor unit, a seventeenth diode Db5, and an eighteenth diode Db6. The first terminal of the second transistor unit is connected to the connection node between the fifth diode Db1 and the seventh diode Db3; the second terminal of the second transistor unit is connected to the connection node between the sixth diode Db2 and the eighth diode Db4; the third terminal of the second transistor unit is connected to the anode of the seventeenth diode Db5; and the fourth terminal of the second transistor unit is connected to the cathode of the eighteenth diode Db6. The cathode of the seventeenth diode Db5 is connected to the anode of the eighteenth diode Db6 and the anode of the fourth diode Db6, respectively. Both the cathode of the seventeenth diode Db5 and the anode of the eighteenth diode Db6 are connected to the other end of the first capacitor C1 and one end of the second capacitor C2.

[0039] It should be noted that the first end of the second transistor unit can be understood as the collector of the fourth transistor Sb1, the second end of the second transistor unit can be understood as the emitter of the sixth transistor Sb2, the third end of the second transistor unit can be understood as the cathode of the seventeenth diode Db5, and the fourth end of the second transistor unit can be understood as the anode of the eighteenth diode Db6.

[0040] Optionally, in some embodiments, the second transistor unit includes a fourth transistor Sb1, a fifth transistor Sb3, a sixth transistor Sb2, a nineteenth diode, and a twentieth diode. The emitter of the fourth transistor Sb1 is connected to the emitter of the fifth transistor Sb3, the anode of the seventeenth diode Db5, and the anode of the nineteenth diode, respectively. The collector of the fourth transistor Sb1 is connected to the connection node between the fifth diode Db1 and the seventh diode Db3, and the cathode of the nineteenth diode, respectively. The collector of the fifth transistor Sb3 is connected to the cathode of the eighteenth diode Db6, the collector of the sixth transistor Sb2, and the cathode of the twentieth diode, respectively. The emitter of the sixth transistor Sb2 is connected to the connection node between the sixth diode Db2 and the eighth diode Db4, and the anode of the twentieth diode, respectively.

[0041] Optionally, in some embodiments, the third switching assembly includes a third transistor unit, a twenty-first diode Dc5, and a twenty-second diode Dc6. The first terminal of the third transistor unit is connected to the connection node between the ninth diode Dc1 and the eleventh diode Dc3; the second terminal of the third transistor unit is connected to the connection node between the tenth diode Dc2 and the eleventh and twelfth diodes Dc4; the third terminal of the third transistor unit is connected to the anode of the twenty-first diode Dc5; and the fourth terminal of the third transistor unit is connected to the cathode of the twenty-second diode Dc6. The cathode of the twenty-first diode Dc5 is connected to the anode of the eighteenth diode Db6 and the anode of the twenty-second diode Dc6. The cathode of the twenty-first diode Dc5 and the anode of the twenty-second diode Dc6 are both connected to the other end of the first capacitor C1 and one end of the second capacitor C2.

[0042] It should be noted that the first end of the third transistor unit can be understood as the collector of the seventh transistor Sc1, the second end of the third transistor unit can be understood as the emitter of the ninth transistor Sc2, the third end of the third transistor unit can be understood as the cathode of the twenty-first diode Dc5, and the fourth end of the third transistor unit can be understood as the anode of the twenty-second diode Dc6.

[0043] Optionally, in some embodiments, the third transistor unit includes a seventh transistor Sc1, an eighth transistor Sc3, a ninth transistor Sc2, a twenty-third diode, and a twenty-fourth diode. The emitter of the seventh transistor Sc1 is connected to the emitter of the eighth transistor Sc3, the anode of the twenty-third diode, and the anode of the twenty-first diode Dc5. The collector of the seventh transistor Sc1 is connected to the cathode of the twenty-third diode, the connection node between the ninth diode Dc1 and the eleventh diode Dc3, respectively. The collector of the eighth transistor Sc3 is connected to the cathode of the twenty-second diode Dc6, the collector of the ninth transistor Sc2, and the cathode of the twenty-fourth diode, respectively. The emitter of the ninth transistor Sc2 is connected to the connection node between the tenth diode Dc2 and the eleventh diode Dc4, and the anode of the twenty-fourth diode, respectively.

[0044] Optionally, in some embodiments, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a first inductor La1 and a second inductor La2, wherein one end of the first inductor La1 is connected to the first output terminal of the first phase voltage Uga, and the other end of the first inductor La1 is connected to the connection node between the first diode Da1 and the third diode Da3, the collector of the first transistor Sa1, and the cathode of the fifteenth diode; one end of the second inductor La2 is connected to the second output terminal of the first phase voltage Uga and one end of the first inductor La1, and the other end of the second inductor La2 is connected to the connection node between the second diode Da2 and the fourth diode Da4, the emitter of the third transistor Sa2, and the anode of the sixteenth diode.

[0045] Optionally, in some embodiments, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a third inductor Lb1 and a fourth inductor Lb2, wherein one end of the third inductor Lb1 is connected to the first output terminal of the second phase voltage Ugb, and the other end of the third inductor Lb1 is connected to the connection node between the fifth diode Db1 and the seventh diode Db3, the collector of the fourth transistor Sb1, and the cathode of the nineteenth diode; one end of the fourth inductor Lb2 is connected to one end of the third inductor Lb1 and the second output terminal of the second phase voltage Ugb, and the other end of the fourth inductor Lb2 is connected to the connection node between the sixth diode Db2 and the eighth diode Db4, the emitter of the sixth transistor Sb2, and the anode of the twentieth diode.

[0046] Optionally, in some embodiments, the above-described interleaved parallel three-level three-switch rectifier topology further includes: a fifth inductor Lc1 and a sixth inductor Lc2, wherein one end of the fifth inductor Lc1 is connected to the first output terminal of the third phase voltage Ugc, and the other end of the fifth inductor Lc1 is connected to the connection node between the ninth diode Dc1 and the eleventh diode Dc3, the collector of the seventh transistor Sc1, and the cathode of the twenty-third diode; one end of the sixth inductor Lc2 is connected to the second output terminal of the third phase voltage Ugc and one end of the fifth inductor Lc1, and the other end of the sixth inductor Lc2 is connected to the connection node between the tenth diode Dc2 and the eleventh and twelfth diodes Dc4, the emitter of the ninth transistor Sc2, and the anode of the twenty-fourth diode.

[0047] Specifically, the three-phase system rectifier topology of this application embodiment is as follows: Figure 1 As shown, in the interleaved parallel three-level three-switch rectifier topology, each phase circuit consists of three switching transistors S. x1 S x2 S x3 (x = a, b, c), namely, the first transistor Sa1, the second transistor Sa3, the third transistor Sa2, the fourth transistor Sb1, the fifth transistor Sb3, the sixth transistor Sb4, the seventh transistor Sc1, the eighth transistor Sc3, the ninth transistor Sc2, and two diodes D. x1 D x2 Composed of (x = a, b, c), namely diodes 1 to 12, 13th diode Da5, 4th diode Da6, 17th diode Db5, 18th diode Db6, 21st diode Dc5, and 22nd diode Dc6. It should be noted that S... x1 With S x2 Complementary activation and deactivation.

[0048] The interleaved parallel three-level three-switch rectifier topology has three switching states and four operating modes. Switching state 1 and switching state 3 each correspond to one operating mode, while switching state 2 corresponds to two operating modes depending on the current direction. Taking a single-phase circuit as an example, the specific working principle is analyzed as follows:

[0049] (1) When the interleaved parallel three-level three-switch rectifier is operating in switch state 1, its equivalent circuit is as follows: Figure 2 As shown, all transistors are turned off. At this time, the output current i0 flows through diode D. x1 and D x4 (i.e., diodes one through twelfth), output level is U dc .

[0050] (2) When the interleaved parallel three-level three-switch rectifier is operating in switch state 2 and the current is flowing outward, its equivalent circuit is as follows: Figure 3 As shown, transistor S x2 S x3 (Sa2, Sa3, Sb2, Sb3, Sc2, Sc3) are turned on, diode D x5 (That is, Da5, Db5, and Dc5) are forward conducting. At this time, the output current i o Flowing through S x2 S x3 and D x5 The bridge arm endpoints are clamped to the N level, and the output level is 1 / 2U. dc .

[0051] (3) When the interleaved parallel three-level three-switch rectifier is operating in switch state 2 and the current is flowing in, its equivalent circuit is as follows: Figure 4 As shown, transistor S x1 S x3 (Sa1, Sa3, Sb1, Sb3, Sc1, Sc3) are turned on, diode D x6 (That is, Da6, Db6, and Dc6) are forward conducting. At this time, the output current i o Flowing through S x1 S x3 D x6 The bridge arm endpoints are clamped to the N level, and the output level is 1 / 2U. dc .

[0052] (4) When the interleaved parallel three-level three-switch rectifier is operating in switch state 3, its equivalent circuit is as follows: Figure 5 As shown, in which phase a switch S a2 S a3 Turn on, diode D a5 Forward conduction, phase b and phase c switching transistors S x1 S x3 Turn on, diode D x6 Forward conduction. At this time, the output current i o Flowing through S a2 S a3 S b1 S b3 S c1 S c3 D a5 D b6 D c6 The output level is 0.

[0053] In addition, the embodiments of this application employ a dual-carrier phase-shifted 180° modulation method to generate complementary upper and lower switching signals (T). x1 T x1’ To reduce output current ripple, a control signal diagram and such are provided. Figure 6 As shown, T x1 and T x2 ’ These are used as switching signals for the two parallel branches, respectively, and the intermediate power transistor S in the parallel branch... x3 The control signal diagram is as follows: Figure 7 As shown.

[0054] To demonstrate the feasibility of the interleaved parallel three-level three-switch rectifier topology, this application constructed its simulation model. The simulation parameters are shown in Table 1, and the simulation results are as follows. Figures 8-11 As shown. The initial capacitor voltage is 400V, and the load resistance is 11.8Ω. Simulation results show that the DC bus voltage stabilizes in 0.4s, the three-phase current THD = 1.4%, the output current fluctuation range is less than 0.02A, and the voltage stress is U. dc / 2, this topology reduces current harmonics while reducing the number of power transistors. Simulation results show that the interleaved parallel three-level three-switch rectifier topology proposed in this application is feasible.

[0055] Table 1

[0056] parameter size <![CDATA[DC bus voltage U dc > 800V DC bus capacitor <![CDATA[C1=C2=2mF]]> <![CDATA[Switching frequency f s > 50kHz Pure resistive load 11.8Ω

[0057] The interleaved parallel three-level three-switch rectifier topology circuit proposed in this application includes first to third rectifier modules, a first capacitor, and a second capacitor. The first rectifier module includes a first diode assembly and a first switch assembly, the first diode assembly including first to fourth diodes; the second rectifier module includes a second diode assembly and a second switch assembly, the second diode assembly including fifth to eighth diodes; and the third rectifier module includes a third diode assembly and a third switch assembly, the third diode assembly including ninth to twelfth diodes. This solves the problem that each phase of the interleaved parallel Vienna rectifier topology consists of four power switches, increasing the economic burden, by reducing the number of switching devices and lowering the economic cost.

[0058] In the description of this specification, the references to terms such as "one embodiment," "some embodiments," "example," "specific example," or "some examples," etc., indicate that a specific feature, structure, material, or characteristic described in connection with that embodiment or example is included in at least one embodiment or example of this application. In this specification, the illustrative expressions of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the specific features, structures, materials, or characteristics described may be combined in any suitable manner in one or more embodiments or examples. Moreover, without contradiction, those skilled in the art can combine and integrate the different embodiments or examples described in this specification, as well as the features of different embodiments or examples.

[0059] Furthermore, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one of that feature. In the description of this application, "N" means at least two, such as two, three, etc., unless otherwise explicitly specified.

[0060] It should be understood that the various parts of this application can be implemented using hardware, software, firmware, or a combination thereof. In the above embodiments, the N steps or methods can be implemented using software or firmware stored in memory and executed by a suitable instruction execution system. For example, if implemented in hardware as in another embodiment, it can be implemented using any one or a combination of the following techniques known in the art: discrete logic circuits having logic gates for implementing logical functions on data signals, application-specific integrated circuits (ASICs) having suitable combinational logic gates, programmable gate arrays (PGAs), field-programmable gate arrays (FPGAs), etc.

Claims

1. An interleaved parallel three-level three-switch rectifier topology circuit, characterized in that, include: The first rectifier module to the third rectifier module, the first capacitor and the second capacitor, wherein... The first rectifier module includes a first diode assembly and a first switching assembly. The first diode assembly includes a first to a fourth diode. The connection node between the first diode and the third diode is connected to the first output terminal of the first phase voltage and the first input terminal of the first switching assembly, respectively. The connection node between the second diode and the fourth diode is connected to the second output terminal of the first phase voltage and the second input terminal of the first switching assembly, respectively. The output terminal of the first switching assembly is connected to the connection node between the first capacitor and the second capacitor. The cathode of the first diode is connected to the cathode of the second diode. The anode of the first diode is connected to the cathode of the third diode. The anode of the third diode is connected to the anode of the fourth diode. The anode of the second diode is connected to the cathode of the fourth diode. The second rectifier module includes a second diode assembly and a second switching assembly. The second diode assembly includes a fifth to an eighth diode. The connection point between the fifth and seventh diodes is connected to the first output terminal of the second phase voltage and the first input terminal of the second switching assembly, respectively. The connection point between the sixth and eighth diodes is connected to the second output terminal of the second phase voltage and the second input terminal of the second switching assembly, respectively. The output terminal of the second switching assembly is connected to the connection node between the first capacitor and the second capacitor. The cathode of the fifth diode is connected to the cathode of the second diode and the cathode of the sixth diode, respectively. The anode of the fifth diode is connected to the anode of the seventh diode, respectively. The anode of the seventh diode is connected to the anode of the fourth diode and the anode of the eighth diode, respectively. The cathode of the eighth diode is connected to the cathode of the sixth diode. The third rectifier module includes a third diode assembly and a third switch assembly. The third diode assembly includes a ninth to a twelfth diode. The connection node between the ninth and eleventh diodes is connected to the first output terminal of the third phase voltage and the first input terminal of the third switch assembly, respectively. The connection node between the tenth and twelfth diodes is connected to the second output terminal of the third phase voltage and the second input terminal of the third switch assembly, respectively. The output terminal of the third switch assembly is connected to the connection node between the first capacitor and the second capacitor. One end of the first capacitor is connected to the cathode of the tenth diode, the other end of the first capacitor is connected to one end of the second capacitor, and the other end of the second capacitor is connected to the anode of the twelfth diode. The first switching component includes: The first transistor unit, the thirteenth diode, and the fourteenth diode, among which... The first end of the first transistor unit is connected to the connection node between the first diode and the third diode, the second end of the first transistor unit is connected to the connection node between the second diode and the fourth diode, the third end of the first transistor unit is connected to the anode of the thirteenth diode, and the fourth end of the first transistor unit is connected to the cathode of the fourteenth diode. The cathode of the thirteenth diode is connected to the anode of the fourteenth diode, and both the cathode of the thirteenth diode and the anode of the fourteenth diode are connected to the other end of the first capacitor and one end of the second capacitor. The first transistor unit includes: The first transistor, the second transistor, the third transistor, the fifteenth diode, and the sixteenth diode, among which... The emitter of the first transistor is connected to the emitter of the second transistor, the anode of the thirteenth diode, and the anode of the fifteenth diode, respectively. The collector of the first transistor is connected to the connection node between the first diode and the third diode, and the cathode of the sixteenth diode, respectively. The collector of the second transistor is connected to the cathode of the fourteenth diode, the collector of the third transistor, and the cathode of the sixteenth diode, respectively. The emitter of the third transistor is connected to the anode of the sixteenth diode, the connection node between the second diode and the fourth diode.

2. The circuit according to claim 1, characterized in that, The second switching assembly includes The second transistor unit, the seventeenth diode, and the eighteenth diode, among which, The first end of the second transistor unit is connected to the connection node between the fifth and seventh diodes, the second end of the second transistor unit is connected to the connection node between the sixth and eighth diodes, the third end of the second transistor unit is connected to the anode of the seventeenth diode, and the fourth end of the second transistor unit is connected to the cathode of the eighteenth diode. The cathode of the seventeenth diode is connected to the anode of the eighteenth diode and the anode of the fourteenth diode, respectively. The cathode of the seventeenth diode and the anode of the eighteenth diode are both connected to the other end of the first capacitor and one end of the second capacitor.

3. The circuit according to claim 2, characterized in that, The second transistor unit includes The fourth transistor, the fifth transistor, the sixth transistor, the nineteenth diode, and the twentieth diode, among which, The emitter of the fourth transistor is connected to the emitter of the fifth transistor, the anode of the seventeenth diode, and the anode of the nineteenth diode, respectively. The collector of the fourth transistor is connected to the connection node between the fifth and seventh diodes and the cathode of the nineteenth diode, respectively. The collector of the fifth transistor is connected to the cathode of the eighteenth diode, the collector of the sixth transistor, and the cathode of the twentieth diode, respectively. The emitter of the sixth transistor is connected to the connection node between the sixth diode and the eighth diode, and the anode of the twentieth diode.

4. The circuit according to claim 1, characterized in that, The third switching assembly includes The third transistor unit, the twenty-first diode, and the twenty-second diode, among which... The first end of the third transistor unit is connected to the connection node between the ninth and eleventh diodes, the second end of the third transistor unit is connected to the connection node between the tenth and twelfth diodes, the third end of the third transistor unit is connected to the anode of the twenty-first diode, and the fourth end of the third transistor unit is connected to the cathode of the twenty-second diode. The cathode of the 21st diode is connected to the anode of the 18th diode and the anode of the 22nd diode. The cathode of the 21st diode and the anode of the 22nd diode are both connected to the other end of the first capacitor and one end of the second capacitor.

5. The circuit according to claim 4, characterized in that, The third transistor unit includes Transistor No. 7, Transistor No. 8, Transistor No. 9, Diode No. 23, Diode No. 24, among which, The emitter of the seventh transistor is connected to the emitter of the eighth transistor, the anode of the twenty-third diode, and the anode of the twenty-first diode. The collector of the seventh transistor is connected to the cathode of the twenty-third diode and the connection node between the ninth and eleventh diodes. The collector of the eighth transistor is connected to the cathode of the twenty-second diode, the collector of the ninth transistor, and the cathode of the twenty-fourth diode, respectively. The emitter of the ninth transistor is connected to the connection node between the tenth and twelfth diodes and the anode of the twenty-fourth diode.

6. The circuit according to claim 1, characterized in that, Also includes: First inductor and second inductor, wherein... One end of the first inductor is connected to the first output terminal of the first phase voltage, and the other end of the first inductor is connected to the connection node between the first diode and the third diode, the collector of the first transistor, and the cathode of the fifteenth diode. One end of the second inductor is connected to the second output terminal of the first phase voltage and one end of the first inductor, and the other end of the second inductor is connected to the connection node between the second diode and the fourth diode, the emitter of the third transistor and the anode of the sixteenth diode.

7. The circuit according to claim 6, characterized in that, Also includes: The third and fourth inductors, among which... One end of the third inductor is connected to the first output terminal of the second phase voltage, and the other end of the third inductor is connected to the connection node between the fifth diode and the seventh diode, the collector of the fourth transistor, and the cathode of the nineteenth diode. One end of the fourth inductor is connected to one end of the third inductor and the second output terminal of the second phase voltage, and the other end of the fourth inductor is connected to the connection node between the sixth diode and the eighth diode, the emitter of the sixth transistor, and the anode of the twentieth diode.

8. The circuit according to claim 7, characterized in that, Also includes: The fifth and sixth inductors, among which, One end of the fifth inductor is connected to the first output terminal of the third phase voltage, and the other end of the fifth inductor is connected to the connection node between the ninth and eleventh diodes, the collector of the seventh transistor, and the cathode of the twenty-third diode. One end of the sixth inductor is connected to the second output terminal of the third phase voltage and one end of the fifth inductor, and the other end of the sixth inductor is connected to the connection node between the tenth and twelfth diodes, the emitter of the ninth transistor, and the anode of the twenty-fourth diode.

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