Multi-dimensional measurement pixel structure and method for charged particle detection

Abstract

The invention relates to the field of charged particle detection, and discloses a multi-dimensional measurement pixel structure and method for charged particle detection, and the structure comprises a plurality of pixel units, each pixel unit comprises a charge collection unit which collects charges and obtains a to-be-recognized signal; the charge sensitive pre-amplification unit amplifies the received to-be-identified signal to obtain an amplified signal of the to-be-identified signal; the energy measuring unit processes the received amplified signal to obtain amplitude information of the charge signal to be identified; the identification unit processes the received amplification signal to obtain a fast and slow arrival time identification signal, transmits the fast and slow arrival time identification signal to a comprehensive identification unit of the peripheral common unit, and performs comprehensive processing to obtain a total arrival time identification signal and identification information of a to-be-identified charge signal; and the time measuring unit is used for processing the received total arrival time identification signal to obtain thick and thin arrival time information of the charge signal to be identified. According to the invention, the multi-dimensional measurement function of time, energy and position is realized.

Description

Technical Field

[0001] The present invention relates to the technical field of charged particle detection, and in particular to a multi-dimensional measurement pixel structure and method for charged particle detection. Background Art

[0002] When particles pass through matter, they cause ionization or excitation. The element that uses the physical changes such as ionization effect caused by them in gas, liquid or solid for detection is called a nuclear detector. When particles are incident on the sensitive area of ​​the semiconductor detector, they lose energy and generate electron-hole pairs, which drift and separate from the two ends of the electrode under the action of the external electric field and are collected to form an output pulse signal. The silicon pixel chip is one of the current mainstream detector chips. It is mainly composed of a densely arranged pixel array and a peripheral readout circuit. Each pixel contains a charge-sensitive unit that collects electrons and outputs electrical signals and its front-end signal processing circuit. The different signals generated by the interaction between particles and different pixels provide accurate two-dimensional position information. Its small size brings excellent spatial resolution and low mass, and can achieve low noise and fast readout rate. Therefore, it has a wide range of applications in various fields such as physical experiments, space detection, medical instruments, material analysis and environmental detection: Pixel sensors can be divided into monolithic and hybrid types in terms of structure. The monolithic type integrates the charge sensitive unit and the front-end circuit on the same substrate, minimizing the complexity of the interface design. This integration ensures high granularity, low material budget and relatively small equivalent input capacitance. Monolithic active pixel sensors are one of the most promising technologies among monolithic sensors. The characteristics of hybrid pixel sensors are that the charge sensitive unit and the front-end readout circuit are on separate substrates and connected by flip-chip bonding. The charge sensitive unit and readout circuit of the hybrid type can be made of different materials and optimized separately. For example, the sensor part in X-ray imaging uses non-silicon materials such as GaAs and CdTe, while the readout part uses silicon design. The separate design of the charge sensitive unit also makes it possible to design and produce larger sizes. Therefore, compared with the monolithic type, the hybrid type usually has flexible readout functions and wider applications. However, the complex interface and numerous production steps make the hybrid pixel detector relatively more expensive.

[0003] With the rapid development of high-energy physics, higher requirements are placed on silicon pixel sensors that can be used for charged particle detection. Currently, most silicon pixel sensors can only record the impact or energy of charged particles, with a time accuracy of only a few microseconds, and require manual reset, resulting in a large amount of undetectable dead time. Summary of the invention

[0004] In view of the above problems, the purpose of the present invention is to provide a multi-dimensional measurement pixel structure and method for charged particle detection, which realizes the multi-dimensional measurement functions of time, energy and position, can perform charged particle track measurement, and can perform charged particle hit measurement, solves the problem of low time measurement accuracy of multi-dimensional measurement pixel sensors, realizes automatic reset, and has certain radiation resistance.

[0005] To achieve the above-mentioned purpose, the present invention adopts the following technical scheme: a multi-dimensional measurement pixel structure for charged particle detection, which includes: a plurality of pixel units and a peripheral common unit, each pixel unit can measure the impact position, deposition energy and incident time of the charged particles, and the plurality of pixel units are connected to the peripheral common unit, and the measured impact position, deposition energy and incident time of the charged particles are transmitted to the peripheral common unit for processing, and then the arrival time information of the charge signal to be identified is output; wherein each pixel unit includes: a charge collection unit, which is used to collect charges and obtain the signal to be identified; a charge sensitive preamplifier unit, which is used to amplify the received signal to be identified and obtain the signal to be identified. an amplified signal; an energy measurement unit, used to process the received amplified signal to obtain the amplitude information of the charge signal to be identified; an identification unit, used to process the received amplified signal to obtain the fast and slow arrival time identification signal of the charge signal to be identified, and transmit it to the peripheral shared unit; the peripheral shared unit includes a comprehensive identification unit and a time measurement unit; wherein: the comprehensive identification unit is used to receive multiple fast and slow arrival time identification signals transmitted by multiple identification units, and obtain the total arrival time identification signal and the identification information of the charge signal to be identified after comprehensive processing; the time measurement unit is used to process the received total arrival time identification signal to obtain the coarse and fine arrival time information of the charge signal to be identified.

[0006] Furthermore, the charge collection unit adopts a charge collection diode or a top metal layer collection unit.

[0007] Further, the charge sensitive preamplifier unit includes a simplified folded cascode operational amplifier, a deep negative feedback circuit, a bleeder circuit and a bias circuit; The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input terminal and the output terminal of the simplified folded cascode operational amplifier. The bias circuit is connected through a current mirror to provide the simplified folded cascode operational amplifier with a DC bias required for normal operation.

[0008] Furthermore, the energy measurement unit is composed of a source follower circuit, which is used to read out the output signal of the charge sensitive preamplifier unit to obtain the amplitude information of the charge signal to be identified.

[0009] Further, the discrimination unit includes a high threshold comparator and a low threshold comparator; The high threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set high threshold, obtain a slow arrival time identification signal of the charge signal to be identified; The low threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set low threshold, a fast arrival time identification signal of the charge signal to be identified is obtained.

[0010] Further, the integrated identification unit includes a multi-input OR gate circuit and a digital buffer; A multi-input OR gate circuit for receiving fast arrival time identification signals of a plurality of pixel units outputs a total arrival time identification signal and transmits it to a time measurement unit; The multi-input OR gate circuit is used for receiving the slow arrival time identification signal and outputting the identification information of the charged particles through the digital buffer.

[0011] Further, the time measurement unit includes an enable logic circuit, a multiplexer circuit, a radiation-resistant counter, a latch, a time-to-amplitude converter, a transmission gate circuit, a digital buffer circuit, and a source follower circuit; Taking the total arrival time identification signal and the external input STOP signal as input, the output of the enable logic circuit is connected to the enable terminal of the multiplexer circuit through the transmission gate, and the output of the multiplexer circuit is connected to the input terminal of the radiation-resistant counter; The rising edge of the lowest bit output of the radiation-resistant counter is latched by the latch, and the latch signal passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The output of the enabling logic circuit also passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The total arrival time identification signal output by the integrated identification unit is used as the control signal of the NMOS switch of the time-to-amplitude converter, and also passes through a first-stage inverter as the reset signal of the time-to-amplitude converter. A charging and discharging capacitor is connected in parallel, and the PMOS controlled by an external DC level is used as the current source of the time-to-amplitude converter.

[0012] A method for using the multi-dimensional measurement pixel structure for charged particle detection includes: Acquiring a charge signal to be identified through a charge collection unit; Inputting the charge signal to be identified into the charge sensitive preamplifier unit for amplification processing to obtain an amplified signal of the charge signal to be identified; The amplified signal is input into the energy measurement unit to obtain the amplitude information of the charge signal to be identified; The amplified signal is input into the identification unit to obtain a fast or slow arrival time identification signal of the charge signal to be identified; Inputting the fast and slow arrival time identification signals of the plurality of pixel units into the comprehensive identification unit to obtain the total arrival time identification signal and identification information of the charge signal to be identified; The total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified.

[0013] Furthermore, the charge collection unit uses a charge collection diode or a top metal layer collection unit to collect the charge signal of the charged particles incident on the pixel unit to obtain the charge signal to be identified.

[0014] Furthermore, the total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified, including: Through the transmission gate circuit, the radiation-resistant counter and the time-to-amplitude converter working mode together or the time-to-amplitude converter working mode only is selected; The received total arrival time identification signal and the external input STOP signal are processed into a counting enable signal of the radiation-resistant counter through an enabling logic circuit; The received count enable signal is input into the radiation-resistant counter through a multiplexer; Through the radiation-resistant counter, under the control of the counting enable signal, the coarse arrival time count is obtained; The first rising edge of the least significant bit output of the radiation-resistant counter is latched by the latch; Through the time-to-amplitude converter, under the joint control of the received latch signal and the total arrival time identification signal, fine time counting is completed; The received rough arrival time count is read out through a digital buffer circuit to obtain the rough arrival time information; The received fine time count is read out through a source follower circuit to obtain fine arrival time information.

[0015] The present invention adopts the above technical solution, which has the following advantages: The present invention realizes a multi-dimensional measurement function that can simultaneously measure the impact position, deposited energy and arrival time of charged particles, and can perform both charged particle track measurement and charged particle impact measurement. The design of the identification unit effectively reduces the arrival time measurement error caused by the different energies carried by the impacting particles, and the cooperation of the radiation-resistant counter and the time-amplitude converter greatly improves the time measurement accuracy; in addition, the charge-sensitive preamplifier unit is designed to decay slowly, so that the entire circuit does not need to be manually reset, solving the key technical problems of high-performance pixel sensors. BRIEF DESCRIPTION OF THE DRAWINGS

[0016] Figure 1Schematic diagram of a novel super pixel unit structure for charged particle detection in an embodiment of the present invention; Figure 2 Schematic diagram of the structure of a charge-sensitive preamplifier unit in a pixel unit in an embodiment of the present invention; Figure 3 Schematic diagram of the structure of the integrated identification unit in the peripheral shared unit in the embodiment of the present invention; Figure 4 Schematic diagram of the structure of a time measurement unit in a peripheral shared unit in an embodiment of the present invention; Figure 5 A schematic diagram of the signal processing flow of a super pixel unit circuit for charge signal processing provided in an embodiment of the present invention. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solution and advantages of the embodiment of the present invention clearer, the technical solution of the embodiment of the present invention will be clearly and completely described below in conjunction with the drawings of the embodiment of the present invention. Obviously, the described embodiment is a part of the embodiment of the present invention, not all of the embodiments. Based on the described embodiment of the present invention, all other embodiments obtained by ordinary technicians in this field belong to the scope of protection of the present invention.

[0018] It should be noted that the terms used herein are only for describing specific embodiments and are not intended to limit exemplary embodiments according to the present invention. As used herein, unless the context clearly indicates otherwise, the singular form is also intended to include the plural form. In addition, it should be understood that when the terms "comprising" and / or "including" are used in this specification, it indicates the presence of features, steps, operations, devices, components and / or combinations thereof.

[0019] The present invention provides a novel super pixel unit structure for charged particle detection and a method for using the same. The pixel unit is implemented based on a complementary metal-oxide-semiconductor (CMOS) process and includes a pixel unit and a peripheral common unit: the pixel unit includes a charge collection unit, a charge sensitive preamplifier unit, an energy measurement unit and an identification unit; the peripheral common unit includes a comprehensive identification unit and a time measurement unit. The charge collection unit is used to collect the energy deposited by the charged particles incident on the pixel unit; the charge sensitive preamplifier unit is used to amplify the charge signal collected by the charge collection unit; the energy measurement unit is used to obtain the amplitude information of the charge signal deposited by the charged particles; the identification unit is used to identify the fast and slow arrival time of the charge signal deposited by the charged particles; the comprehensive identification unit is used to comprehensively obtain the total arrival time identification signal and the identification information of the charged particles from multiple pixel units; and the time measurement unit is used to obtain the time information of the particle incident. The present invention realizes a multi-dimensional measurement function that can simultaneously measure the impact position, deposited energy and arrival time of charged particles; the use of an identification unit can effectively reduce the arrival time measurement error caused by the different energies carried by the impacting particles, and the cooperation of the radiation-resistant counter and the time-amplitude converter greatly improves the time measurement accuracy; in addition, the entire circuit does not need to be manually reset.

[0020] In one embodiment of the present invention, a multi-dimensional measurement pixel structure for charged particle detection is provided. In this embodiment, Figure 1 As shown, the multi-dimensional measurement pixel structure includes: multiple pixel units and peripheral shared units, each pixel unit can measure the impact position, deposition energy and incident time of charged particles, and multiple pixel units are connected to the peripheral shared unit. The measured impact position, deposition energy and incident time of the charged particles are transmitted to the peripheral shared unit for processing, and then the arrival time information of the charge signal to be identified is output.

[0021] Wherein, each pixel unit includes: A charge collection unit, used to collect charges and obtain a signal to be identified; A charge-sensitive preamplifier unit is used to amplify the received signal to be identified to obtain an amplified signal of the signal to be identified; An energy measurement unit, used to process the received amplified signal to obtain amplitude information of the charge signal to be identified; The identification unit is used to process the received amplified signal to obtain a fast or slow arrival time identification signal of the charge signal to be identified, and transmit the fast or slow arrival time identification signal to the peripheral common unit; The peripheral shared unit includes a comprehensive identification unit and a time measurement unit; wherein: A comprehensive identification unit is used to receive a plurality of fast and slow arrival time identification signals transmitted from a plurality of identification units, and obtain identification information of a total arrival time identification signal and a charge signal to be identified after comprehensive processing; The time measurement unit is used to process the received total arrival time identification signal to obtain the coarse and fine arrival time information of the charge signal to be identified.

[0022] In the above embodiments, the charge collection unit is a charge collection diode or a top metal layer collection unit. In this embodiment, the charge collection diode is preferably an octagonal diode.

[0023] In the above embodiment, Figure 2 As shown, the charge sensitive preamplifier unit includes a simplified folded cascode operational amplifier, a deep negative feedback circuit, a bleeder circuit and a bias circuit. The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input and output of the simplified folded cascode operational amplifier, and the bias circuit is connected through a current mirror to provide the simplified folded cascode operational amplifier with the DC bias required for normal operation.

[0024] When in use, the signal to be identified is input to the inverting input terminal of the simplified folded cascode operational amplifier, the deep negative feedback circuit is used to provide a stable output gain, and the bleeder circuit can release the charge accumulated in the deep negative feedback circuit and stabilize the DC operating point of the feedback. The non-inverting input terminal of the simplified folded cascode operational amplifier is connected to an externally adjustable DC baseline signal, which can adjust the baseline value of the amplified signal for subsequent processing.

[0025] In the above embodiment, the energy measurement unit is composed of a source follower circuit, which is used to read out the output signal of the charge sensitive preamplifier unit to obtain the amplitude information of the charge signal to be identified.

[0026] In the above embodiment, the identification unit includes a high threshold comparator and a low threshold comparator. The high threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set high threshold, obtain the slow arrival time identification signal of the charge signal to be identified; the low threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set low threshold, obtain the fast arrival time identification signal of the charge signal to be identified. Among them, the setting of the high threshold needs to ensure the detection efficiency, and the low threshold is a threshold lower than the high threshold.

[0027] In the above embodiment, Figure 3As shown, the comprehensive identification unit includes a multi-input OR gate circuit and a digital buffer. The multi-input OR gate circuit for receiving fast arrival time identification signals of multiple pixel units outputs a total arrival time identification signal and transmits it to the time measurement unit; the multi-input OR gate circuit for receiving slow arrival time identification signals outputs the identification information of the charged particles through the digital buffer.

[0028] In the above embodiment, Figure 4 As shown, the time measurement unit includes an enable logic circuit, a multiplexer circuit, an anti-radiation counter, a latch, a time-amplitude converter, a transmission gate circuit, a digital buffer circuit and a source follower circuit. With the total arrival time identification signal and the external input STOP signal as input, the output of the enable logic circuit is connected to the enable end of the multiplexer circuit through the transmission gate, and the output of the multiplexer circuit is connected to the input end of the anti-radiation counter. The anti-radiation counter is cascaded by multiple D flip-flops with hardened internal nodes, and has a certain anti-radiation capability. The count is controlled by the enable signal output by the multiplexer; the rising edge of the lowest bit output of the anti-radiation counter is latched by the latch, and the latch signal is used as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit. The output of the enable logic circuit is also used as the control signal of the PMOS switch of the time-amplitude converter through the transmission gate circuit. The total arrival time identification signal output by the comprehensive identification unit is used as the control signal of the NMOS switch of the time-amplitude converter, and also passes through a first-stage inverter as the reset signal of the time-amplitude converter. A charging and discharging capacitor is connected in parallel, and the PMOS controlled by the external DC level is used as the current source of the time-amplitude converter. Among them: An enabling logic circuit, used for processing the received total arrival time identification signal and the external input STOP signal into an enabling signal of the multiplexer circuit; A multiplexer, used for processing the received enable signal into a count enable signal of the radiation-resistant counter; a radiation-hardened counter for performing time-to-digital conversion upon receipt of a count enable signal; A latch, used for latching the first rising edge of the lowest bit output of the received radiation-resistant counter; A time-to-amplitude converter, for performing time-to-amplitude conversion under the received latch signal and the total arrival time discrimination signal; A transmission gate circuit is used for selecting a radiation-hardened counter and a time-to-amplitude converter working mode together or a time-to-amplitude converter working mode only; A digital buffer circuit for reading out the output signal of the radiation-hardened counter to obtain rough arrival time information; The source follower circuit is used to read the output signal of the time-to-amplitude converter to obtain detailed arrival time information.

[0029] When in use, the total arrival time identification signal output by the integrated identification unit and the externally input rectangular wave signal STOP are used as inputs of the anti-radiation counter enable logic to output an enable signal.

[0030] Controlled by the transmission gate circuit, in the joint working mode of the radiation-resistant counter and the time-to-amplitude converter: the enable signal controls the output of the multiplexer, the counter counts during the high level period of the multiplexer output, when the enable signal is pulled low, the counter stops counting and keeps counting until the falling edge of the total arrival time identification signal arrives to reset it, the output of the counter outputs the coarse arrival time information through the digital buffer circuit, the latch latches the first rising edge of the lowest bit output of the received radiation-resistant counter, under the joint control of the total arrival time identification signal and the latch signal, the capacitor of the time-to-amplitude converter starts charging when the rising edge of the total arrival time identification signal arrives, stops charging and keeps when the first rising edge of the lowest bit output of the counter arrives, similarly until the falling edge of the total arrival time identification signal arrives to reset it, the latch signal is also reset at the same time, and the time-to-amplitude converter outputs the fine arrival time information through the source follower circuit.

[0031] Controlled by the transmission gate circuit in the time-to-amplitude converter only working mode, the multiplexer is not enabled, the counter does not work, the enable signal and the total arrival time identification signal jointly control the capacitor of the time-to-amplitude converter to start charging when the rising edge of the total arrival time identification signal arrives, stop charging and maintain when the falling edge of the STOP signal arrives, and reset when the falling edge of the total arrival time identification signal arrives. The time-to-amplitude converter outputs detailed arrival time information through the source follower circuit.

[0032] In one embodiment of the present invention, a method for using a novel super pixel unit structure for charged particle detection is provided, and the method is implemented based on the multi-dimensional measurement pixel structure for charged particle detection in the above embodiments. Figure 5 As shown, the method of use includes the following steps: S101, obtaining a charge signal to be identified through a charge collection unit; S102, inputting the charge signal to be identified into a charge-sensitive preamplifier unit for amplification processing to obtain an amplified signal of the charge signal to be identified; S103, inputting the amplified signal into an energy measurement unit to obtain amplitude information of the charge signal to be identified; S104, inputting the amplified signal into the identification unit to obtain a fast or slow arrival time identification signal of the charge signal to be identified; S105, inputting the fast and slow arrival time identification signals of the plurality of pixel units into the comprehensive identification unit to obtain the total arrival time identification signal and identification information of the charge signal to be identified; S106 , inputting the total arrival time identification signal into a time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified.

[0033] In the above step S101, the charge collection unit uses a charge collection diode or a top metal layer collection unit to collect the charge signal of the charged particles incident on the pixel unit, and then obtains the charge signal to be identified.

[0034] In the above step S106, the total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified, including the following steps: S1061, selecting a radiation-resistant counter and a time-to-amplitude converter working mode together or a time-to-amplitude converter working mode only through a transmission gate circuit; S1062, processing the received total arrival time identification signal and the external input STOP signal into a counting enable signal of the radiation-resistant counter through an enabling logic circuit; S1063, inputting the received count enable signal into the radiation-resistant counter through the multiplexer; S1064, obtaining a rough arrival time count through the radiation-resistant counter under the control of the counting enable signal; S1065, latching the first rising edge of the lowest bit output of the radiation-resistant counter through a latch; S1066, through the time-to-amplitude converter, under the joint control of the received latch signal and the total arrival time identification signal, complete the fine time counting; S1067. Read the received rough arrival time count through the digital buffer circuit to obtain the rough arrival time information.

[0035] S1068. The received fine time count is read out through a source follower circuit to obtain fine arrival time information.

[0036] The method provided in this embodiment is implemented based on the above-mentioned new super pixel unit structure embodiments for charged particle detection. Please refer to the above-mentioned embodiments for specific implementation methods and detailed contents, which will not be repeated here.

[0037] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A multi-dimensional measurement pixel structure for charged particle detection, characterized in that: include: Multiple pixel units and peripheral shared units, each pixel unit can measure the impact position, deposition energy and incident time of the charged particles, and the multiple pixel units are connected to the peripheral shared unit, and the measured impact position, deposition energy and incident time of the charged particles are transmitted to the peripheral shared unit for processing, and then the arrival time information of the charge signal to be identified is output; Wherein, each pixel unit includes: A charge collection unit, used to collect charges and obtain a signal to be identified; A charge-sensitive preamplifier unit, used for amplifying the received signal to be identified to obtain an amplified signal of the signal to be identified; An energy measurement unit, used to process the received amplified signal to obtain amplitude information of the charge signal to be identified; The identification unit is used to process the received amplified signal to obtain a fast or slow arrival time identification signal of the charge signal to be identified, and transmit the fast or slow arrival time identification signal to the peripheral common unit; The peripheral shared unit includes a comprehensive identification unit and a time measurement unit; wherein: A comprehensive identification unit is used to receive a plurality of fast and slow arrival time identification signals transmitted from a plurality of identification units, and obtain identification information of a total arrival time identification signal and a charge signal to be identified after comprehensive processing; The time measurement unit is used to process the received total arrival time identification signal to obtain the coarse and fine arrival time information of the charge signal to be identified.

2. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The charge collection unit uses a charge collection diode or a top metal layer collection unit.

3. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The charge sensitive preamplifier unit comprises a simplified folded common source common gate operational amplifier, a deep negative feedback circuit, a bleeder circuit and a bias circuit; The deep negative feedback circuit and the bleeder circuit are connected in parallel to the inverting input terminal and the output terminal of the simplified folded cascode operational amplifier. The bias circuit is connected through a current mirror to provide the simplified folded cascode operational amplifier with a DC bias required for normal operation.

4. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The energy measurement unit is composed of a source follower circuit, which is used to read out the output signal of the charge sensitive preamplifier unit to obtain the amplitude information of the charge signal to be identified.

5. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The discrimination unit includes a high threshold comparator and a low threshold comparator; The high threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set high threshold, obtain a slow arrival time identification signal of the charge signal to be identified; The low threshold comparator is used to identify the amplified signal output by the received charge sensitive preamplifier unit, and after comparing the amplified signal with the set low threshold, a fast arrival time identification signal of the charge signal to be identified is obtained.

6. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The integrated identification unit includes a multi-input OR gate circuit and a digital buffer; A multi-input OR gate circuit for receiving fast arrival time identification signals of a plurality of pixel units outputs a total arrival time identification signal and transmits it to a time measurement unit; The multi-input OR gate circuit is used for receiving the slow arrival time identification signal and outputting the identification information of the charged particles through the digital buffer.

7. The multi-dimensional measurement pixel structure for charged particle detection according to claim 1, characterized in that: The time measurement unit includes an enable logic circuit, a multiplexer circuit, a radiation-resistant counter, a latch, a time-to-amplitude converter, a transmission gate circuit, a digital buffer circuit, and a source follower circuit; Taking the total arrival time identification signal and the external input STOP signal as input, the output of the enable logic circuit is connected to the enable terminal of the multiplexer circuit through the transmission gate, and the output of the multiplexer circuit is connected to the input terminal of the radiation-resistant counter; The rising edge of the lowest bit output of the radiation-resistant counter is latched by the latch, and the latch signal passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The output of the enabling logic circuit also passes through the transmission gate circuit as the control signal of the PMOS switch of the time-to-amplitude converter. The total arrival time identification signal output by the integrated identification unit is used as the control signal of the NMOS switch of the time-to-amplitude converter, and also passes through a first-stage inverter as the reset signal of the time-to-amplitude converter. A charging and discharging capacitor is connected in parallel, and the PMOS controlled by an external DC level is used as the current source of the time-to-amplitude converter.

8. A method for using the multi-dimensional measurement pixel structure for charged particle detection according to any one of claims 1 to 7, characterized in that: include: Acquiring a charge signal to be identified through a charge collection unit; Inputting the charge signal to be identified into the charge sensitive preamplifier unit for amplification processing to obtain an amplified signal of the charge signal to be identified; The amplified signal is input into the energy measurement unit to obtain the amplitude information of the charge signal to be identified; The amplified signal is input into the identification unit to obtain a fast or slow arrival time identification signal of the charge signal to be identified; Inputting the fast and slow arrival time identification signals of the plurality of pixel units into the comprehensive identification unit to obtain the total arrival time identification signal and identification information of the charge signal to be identified; The total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified.

9. The method of use according to claim 8, characterized in that: The charge collection unit adopts a charge collection diode or a top metal layer collection unit to collect the charge signal of the charged particles incident on the pixel unit to obtain the charge signal to be identified.

10. The method of use according to claim 8, characterized in that: The total arrival time identification signal is input into the time measurement unit to obtain the coarse and fine arrival time information of the charge signal to be identified, including: Through the transmission gate circuit, the radiation-resistant counter and the time-to-amplitude converter working mode together or the time-to-amplitude converter working mode only is selected; The received total arrival time identification signal and the external input STOP signal are processed into a counting enable signal of the radiation-resistant counter through an enabling logic circuit; The received count enable signal is input into the radiation-resistant counter through a multiplexer; Through the radiation-resistant counter, under the control of the counting enable signal, the coarse arrival time count is obtained; The first rising edge of the least significant bit output of the radiation-resistant counter is latched by the latch; Through the time-to-amplitude converter, under the joint control of the received latch signal and the total arrival time identification signal, fine time counting is completed; The received rough arrival time count is read out through a digital buffer circuit to obtain the rough arrival time information; The received fine time count is read out through a source follower circuit to obtain fine arrival time information.

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