Temperature compensation type surface acoustic wave resonator and filter

Abstract

The invention provides a temperature compensation type surface acoustic wave resonator and a filter. The temperature compensation type surface acoustic wave resonator comprises a substrate, an interdigital transducer, a reflecting grating region, a first load structure, a second load structure, a third load structure and a temperature compensation layer, the first load structure is arranged on one side, far away from the substrate, of the long-finger electrode, and the orthographic projection of the first load structure on the substrate is at least partially overlapped with the orthographic projection of at least one long-finger electrode on the substrate; the second load structure is arranged on one side, far away from the long finger electrode, of the first load structure, and the orthographic projection of the second load structure on the substrate is at least partially overlapped with the orthographic projection of at least one first load structure on the substrate; the third load structure is arranged on the side, away from the substrate, of the reflecting grating area, and the orthographic projection of the third load structure on the substrate is at least partially overlapped with the orthographic projection of the reflecting grating on the substrate. According to the temperature compensation type surface acoustic wave resonator, the acting force of the long finger electrode and the reflecting grating on the substrate can be increased, the propagation speed of the surface acoustic wave is changed, then transverse mode clutters can be restrained, and the Q value of the temperature compensation type surface acoustic wave resonator is improved.

Description

Technical Field

[0001] The present application relates to the technical field of surface acoustic wave resonators, and in particular to a temperature compensated surface acoustic wave resonator and a filter. Background Art

[0002] Surface Acoustic Wave Resonator (SAWR) is a resonant device that uses surface acoustic wave (SAW) to propagate in a crystal. SAWR uses the special structure and material properties of the crystal to make the surface acoustic wave resonate in the crystal. SAWR is widely used in wireless communications, wireless sensors, electronic devices and other fields.

[0003] Surface Acoustic Wave Filter (SAW Filter) is a filtering device that uses surface acoustic waves to propagate in a crystal. SAW filters select surface acoustic waves of a specific frequency for filtering by utilizing the special structure and material properties of the crystal. SAW filters are widely used in wireless communications, wireless sensors, radar, electronic equipment and other fields for tasks such as frequency selective filtering, signal conditioning and spectrum shaping.

[0004] In some cases, due to the characteristics of the material or the design of the structure, the filter will excite other unwanted clutter modes while generating the main mode, such as the vibration of the transverse mode. The generation of the transverse mode will reduce the Q value of the resonator and deteriorate the insertion loss of the filter, thus affecting the performance of the filter. Therefore, when designing and manufacturing the filter, it is necessary to pay attention to suppressing the generation of the transverse mode to ensure its stability and performance. Summary of the invention

[0005] The present application provides a temperature compensated surface acoustic wave resonator and filter, which are used to solve the problems of increased insertion loss, frequency response distortion, increased bandwidth and cross-coupling that may be caused by lateral parasitic mode noise.

[0006] In a first aspect, the present application provides a temperature compensated surface acoustic wave resonator, comprising:

[0007] substrate;

[0008] an interdigital transducer, arranged on a side surface of the substrate along the thickness direction, the interdigital transducer comprising a plurality of long finger electrodes, the long finger electrodes comprising a first long finger electrode and a second long finger electrode arranged crosswise along the second direction; the first long finger electrode and the second long finger electrode both extend along the second direction and are arranged along the first direction;

[0009] A reflection grating region is arranged on a surface of one side of the substrate along the thickness direction and is in the same plane as the IDT; along the first direction, the reflection grating region is arranged at least on one side of the IDT; the reflection grating region includes a plurality of reflection gratings extending along the second direction;

[0010] at least one first load structure, disposed on a side of the long finger electrode away from the substrate along the thickness direction, and an orthographic projection of the first load structure on the substrate at least partially overlaps with an orthographic projection of at least one of the long finger electrodes on the substrate;

[0011] at least one second load structure, disposed on a side of the first load structure away from the long finger electrode along the thickness direction, and an orthographic projection of the second load structure on the substrate at least partially overlaps with an orthographic projection of at least one of the first load structures on the substrate;

[0012] at least one third load structure, disposed on a side of the reflective grating away from the substrate along the thickness direction, and an orthographic projection of the third load structure on the substrate at least partially overlaps with an orthographic projection of the reflective grating on the substrate;

[0013] A temperature compensation layer is arranged on a side of the IDT away from the substrate along the thickness direction;

[0014] The first direction intersects the second direction.

[0015] Preferably, along the second direction, the first long finger electrode includes a first end portion close to a side of the second long finger electrode and a second end portion away from a side of the second long finger electrode;

[0016] An orthographic projection of at least a portion of the first load structure on the substrate overlaps with an orthographic projection of the first end on the substrate;

[0017] The second long finger electrode comprises a third end portion close to a side of the first long finger electrode and a fourth end portion away from a side of the first long finger electrode;

[0018] An orthographic projection of at least a portion of the first load structure on the substrate overlaps with an orthographic projection of the third end on the substrate.

[0019] Preferably, the interdigital transducer further comprises a bus bar;

[0020] The bus bar comprises a first bus bar and a second bus bar which are arranged opposite to each other along the first direction; the first bus bar and the second bus bar both extend along the second direction;

[0021] The second end of the first long finger electrode is connected to the first bus bar;

[0022] The fourth end of the second long finger electrode is connected to the second bus bar.

[0023] Preferably, at least a portion of the orthographic projection of the second load structure on the substrate completely overlaps with the orthographic projection of the first load structure on the substrate.

[0024] Preferably, a dimension of the first load structure along the second direction is a first dimension L, and a value range of the first dimension L is: 0.3λ≤L≤0.9λ, wherein λ is a wavelength of a surface acoustic wave.

[0025] Preferably, a dimension of the second load structure along the second direction is a second dimension N, and the second dimension N and the first dimension L satisfy the following relationship: L<N≤2L.

[0026] Preferably, a size of the first load structure along the first direction is equal to a size of the bus bar along the first direction.

[0027] Preferably, a dimension of the second load structure along the first direction is equal to a dimension of the bus bar along the first direction.

[0028] Preferably, a dimension of the third load structure along the second direction is a third dimension J, and the third dimension J and the first dimension L satisfy the following relationship: L<J≤1.5L.

[0029] Preferably, a dimension of the third load structure along the first direction is a fourth dimension M, and the fourth dimension M is equal to a dimension of the reflective grating region along the first direction.

[0030] Preferably, along the second direction, an edge of the second load structure on a side away from the center of the aperture is aligned with an edge of the first load structure on a side away from the center of the aperture.

[0031] Preferably, along the second direction, an edge of the third loading structure on a side away from the center of the aperture is aligned with an edge of the first loading structure on a side away from the center of the aperture.

[0032] Preferably, the first load structure, the second load structure and the third load structure are all arranged inside the temperature compensation layer along the thickness direction.

[0033] Preferably, at least a portion of the orthographic projection of the second load structure on the substrate overlaps with the orthographic projection of the reflective grating region on the substrate.

[0034] Preferably, along the first direction, an end of the second load structure is aligned with a boundary of the reflective grating region away from the IDT.

[0035] In a second aspect, the present application further provides a temperature-compensated surface acoustic wave filter, comprising the temperature-compensated surface acoustic wave resonator described in any one of the first aspects.

[0036] The temperature-compensated surface acoustic wave resonator and filter provided in the present application include a substrate, an interdigital transducer, a reflective grating region, a first load structure, a second load structure, a third load structure and a temperature compensation layer; the first load structure is arranged on a side of the long finger electrode away from the substrate along the thickness direction, and the orthographic projection of the first load structure on the substrate at least partially overlaps with the orthographic projection of at least one long finger electrode on the substrate; the second load structure is arranged on a side of the first load structure away from the long finger electrode along the thickness direction, and the orthographic projection of the second load structure on the substrate at least partially overlaps with the orthographic projection of at least one first load structure on the substrate; the third load structure is arranged on a side of the reflective grating region away from the substrate along the thickness direction, and the orthographic projection of the third load structure on the substrate at least partially overlaps with the orthographic projection of the reflective grating on the substrate. The present application can increase the force of the long finger electrode on the substrate by setting the first load structure and the second load structure, and can increase the force of the reflection grating on the substrate by setting the third load structure, thereby changing the propagation speed of the surface acoustic wave, so that the sound speed of the surface acoustic wave in the area where the first load structure, the second load structure and the third load structure are set is smaller than the sound speed of the area where the first load structure, the second load structure and the third load structure are not set, thereby suppressing the transverse mode noise and improving the Q value of the temperature compensated surface acoustic wave resonator. BRIEF DESCRIPTION OF THE DRAWINGS

[0037] In order to more clearly illustrate the technical solutions in the present application or the prior art, a brief introduction will be given below to the drawings required for use in the embodiments or the description of the prior art. Obviously, the drawings described below are some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative work.

[0038] Figure 1 is a top view of the temperature-compensated surface acoustic wave resonator provided in Example 1 of the present application;

[0039] Figure 2 is a top view of a temperature-compensated surface acoustic wave resonator provided in the second embodiment of the present application;

[0040] Figure 3 is a top view of a temperature-compensated surface acoustic wave resonator provided in Embodiment 3 of the present application;

[0041] Figure 4 4 is a cross-sectional view of a temperature-compensated surface acoustic wave resonator provided in an embodiment of the present application. DETAILED DESCRIPTION

[0042] In order to make the purpose, technical solutions and advantages of this application clearer, the technical solutions in this application will be clearly and completely described below in conjunction with the drawings in this application. Obviously, the described embodiments are part of the embodiments of this application, not all of them. Based on the embodiments in this application, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of this application.

[0043] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the terms used in this way can be interchanged where appropriate, so that the embodiments described herein can be implemented in an order other than that illustrated or described herein.

[0044] First, as Figures 1 to 4 As shown, the embodiment of the present application provides a temperature compensated surface acoustic wave resonator, comprising:

[0045] Substrate 1; the substrate 1 is a piezoelectric substrate, and the material used includes lithium niobate or lithium tantalate;

[0046] An interdigital transducer 2 is disposed on a side surface of the substrate 1 along the thickness direction, the interdigital transducer 2 comprises a plurality of long finger electrodes 21, the long finger electrodes 21 comprise a first long finger electrode 211 and a second long finger electrode 212 arranged crosswise along a second direction Y; the first long finger electrode 211 and the second long finger electrode 212 both extend along the second direction Y and are arranged along a first direction X; the material used for the long finger electrode 21 comprises any one of titanium, chromium, silver, copper, molybdenum, platinum, tungsten, and aluminum, and a combination thereof;

[0047] A reflection grating region 3 is arranged on a surface of one side of the substrate 1 along the thickness direction and is in the same plane as the IDT 2; along the first direction X, the reflection grating region 3 is at least arranged on one side of the IDT 2; the reflection grating region 3 includes a plurality of reflection gratings 31 extending along the second direction Y; the reflection gratings can be used to reflect surface acoustic waves to prevent surface acoustic waves from leaking, and adding reflection gratings can enhance the selectivity of the filter, expand the bandwidth of the filter, reduce the size of the filter and improve the stability of the filter;

[0048] At least one first load structure 4 is arranged on a side of the long finger electrode 21 away from the substrate 1 along the thickness direction, and the orthographic projection of the first load structure 4 on the substrate 1 at least partially overlaps with the orthographic projection of at least one of the long finger electrodes 21 on the substrate 1; the material of the first load structure 4 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of first load structures 4 is two;

[0049] At least one second load structure 5 is arranged on a side of the first load structure 4 away from the long finger electrode 21 along the thickness direction, and the orthographic projection of the second load structure 5 on the substrate 1 at least partially overlaps with the orthographic projection of at least one first load structure 4 on the substrate 1; the material of the second load structure 5 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of second load structures 5 is two;

[0050] At least one third load structure 6 is arranged on a side of the reflective grating 31 away from the substrate 1 along the thickness direction, and the orthographic projection of the third load structure 6 on the substrate 1 at least partially overlaps with the orthographic projection of the reflective grating 31 on the substrate 1; the material of the third load structure 6 includes any one of titanium, copper, aluminum, chromium, silver, molybdenum and any combination thereof; Figures 1 to 3 In the embodiment shown, the number of third load structures 6 is four;

[0051] The temperature compensation layer 7 is arranged on a side of the IDT 2 away from the substrate 1 in the thickness direction; illustratively, the material used for the temperature compensation layer 7 includes a dielectric material with a positive temperature coefficient such as silicon dioxide or silicon nitride; the arrangement of the temperature compensation layer 7 can prevent the temperature change from affecting the resonant frequency of the temperature compensated surface acoustic wave resonator, thereby improving the temperature stability and reliability of the resonator;

[0052] The first direction X and the second direction Y intersect.

[0053] The present application can increase the force of the long finger electrode 21 on the substrate 1 by setting the first load structure 4 and the second load structure 5, and can increase the force of the reflection grating 31 on the substrate 1 by setting the third load structure 6, thereby changing the propagation speed of the surface acoustic wave, so that the sound speed of the surface acoustic wave in the area where the first load structure 4, the second load structure 5 and the third load structure 6 are set is smaller than the sound speed of the area where the first load structure 4, the second load structure 5 and the third load structure 6 are not set, thereby suppressing the transverse mode noise and improving the Q value of the temperature compensated surface acoustic wave resonator.

[0054] Preferably, along the second direction Y, the first long finger electrode 211 includes a first end close to the second long finger electrode 212 and a second end away from the second long finger electrode 212; at least part of the orthographic projection of the first load structure 4 on the substrate 1 overlaps with the orthographic projection of the first end on the substrate 1; the second long finger electrode 212 includes a third end close to the first long finger electrode 211 and a fourth end away from the first long finger electrode 211; at least part of the orthographic projection of the first load structure 4 on the substrate 1 overlaps with the orthographic projection of the third end on the substrate 1. By setting the first load structure 4, the propagation speed of the surface acoustic wave can be changed, so that the sound speed of the surface acoustic wave in the area where the first load structure 4 is set is less than the sound speed of the area where the first load structure 4 is not set, thereby suppressing the transverse mode clutter, reducing the surface acoustic wave leakage and energy loss, and improving the Q value of the temperature compensated surface acoustic wave resonator.

[0055] Preferably, the IDT 2 further includes a bus bar 22; the bus bar 22 includes a first bus bar 221 and a second bus bar 222 which are arranged opposite to each other along the first direction X; the first bus bar 221 and the second bus bar 222 both extend along the second direction Y; the second end of the first long finger electrode 211 is connected to the first bus bar 221; the fourth end of the second long finger electrode 212 is connected to the second bus bar 222. The bus bar 22 can receive an AC signal, and when an AC signal of a certain frequency is applied to the bus bar 22, a surface acoustic wave can be generated in the temperature compensated surface acoustic wave resonator.

[0056] Preferably, at least part of the orthographic projection of the second load structure 5 on the substrate 1 completely overlaps with the orthographic projection of the first load structure 4 on the substrate 1. By providing the second load structure 5, the propagation speed of the surface acoustic wave can be further changed, so that the sound speed of the surface acoustic wave in the area where the second load structure 5 and the first load structure 4 are provided at the same time is smaller than the sound speed of the area where only the first load structure 4 is provided but the second load structure 5 is not provided, thereby suppressing the transverse mode clutter, reducing the leakage and energy loss of the surface acoustic wave, and improving the Q value of the temperature compensated surface acoustic wave resonator.

[0057] Preferably, the dimension of the first load structure 4 along the second direction Y is a first dimension L, and the value range of the first dimension L is: 0.3λ≤L≤0.9λ, where λ is the wavelength of the surface acoustic wave. Such a design can increase the design freedom of the surface acoustic wave resonator on the one hand, and can further enhance the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter on the other hand.

[0058] Preferably, the dimension of the second load structure 5 along the second direction Y is a second dimension N, and the second dimension N satisfies the following relationship with the first dimension L: L<N≤2L. Such a design can increase the design freedom of the surface acoustic wave resonator on the one hand, and can further enhance the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter on the other hand.

[0059] Preferably, the size of the first load structure 4 along the first direction X is equal to the size of the bus bar 22 along the first direction X. In this way, on the one hand, the arrangement is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature-compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0060] Preferably, the size of the second load structure 5 along the first direction X is equal to the size of the bus bar 22 along the first direction X. In this way, on the one hand, the arrangement is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature-compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0061] Preferably, the dimension of the third load structure 6 along the second direction Y is a third dimension J, and the third dimension J satisfies the following relationship with the first dimension L: L<J≤1.5L. Such a design can increase the design freedom of the surface acoustic wave resonator on the one hand, and can further enhance the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter on the other hand.

[0062] Preferably, the dimension of the third load structure 6 along the first direction X is a fourth dimension M, and the fourth dimension M is equal to the dimension of the reflective grating area 3 along the first direction X. In this way, on the one hand, the arrangement is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0063] The first dimension L, the second dimension N, the third dimension J and the fourth dimension M have different values, and the sound speed difference in different regions is different. The optimal values ​​of the above dimensions can be obtained by the optimal parameter optimization algorithm, so that the sound speed difference in different regions is matched to the optimal value, thereby enhancing the suppression effect of the temperature-compensated surface acoustic wave resonator on the transverse mode clutter. Exemplarily, the optimal parameter optimization algorithm can adopt the Newton method, which is an optimization algorithm based on the second-order derivative and can be used for parameter optimization control. It continuously adjusts the parameters by calculating the second-order derivative of the objective function so that the objective function converges to the minimum value; or adopt the quasi-Newton method, which is an optimization algorithm based on the quasi-Newton matrix and can be used for parameter optimization control. It continuously adjusts the parameters by calculating the quasi-Newton matrix so that the objective function converges to the minimum value.

[0064] Preferably, along the second direction Y, the edge of the second load structure 5 on the side away from the center of the aperture is aligned with the edge of the first load structure 4 on the side away from the center of the aperture. In this way, on the one hand, the setting method is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0065] Preferably, along the second direction Y, the edge of the third load structure 6 on the side away from the center of the aperture is aligned with the edge of the first load structure 4 on the side away from the center of the aperture. In this way, on the one hand, the setting method is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0066] Preferably, the first load structure 4, the second load structure 5 and the third load structure 6 are all arranged inside the temperature compensation layer 7 along the thickness direction. Such a design can further enhance the suppression effect of the temperature compensation surface acoustic wave resonator on the transverse mode clutter.

[0067] Preferably, at least part of the orthographic projection of the second load structure 5 on the substrate 1 overlaps with the orthographic projection of the reflective grating region 3 on the substrate 1. Such a design can further enhance the suppression effect of the temperature-compensated surface acoustic wave resonator on transverse mode clutter. Figure 2 As shown, in the second embodiment, the orthographic projection of the second load structure 5 on the substrate 1 overlaps with a part of the orthographic projection of the reflective grating region 3 on the substrate 1. Figure 3 As shown, in the third embodiment, the orthographic projection of the second load structure 5 on the substrate 1 overlaps with the entire orthographic projection of the reflective grating area 3 on the substrate 1 .

[0068] Preferably, along the first direction X, the end of the second load structure 5 is aligned with the boundary of the reflection grating area 3 away from the interdigital transducer 2. In this way, on the one hand, the setting method is simple, easy to design and maintain, and on the other hand, the suppression effect of the temperature compensated surface acoustic wave resonator on the transverse mode clutter can be further enhanced.

[0069] In a second aspect, based on the same inventive concept, an embodiment of the present application further provides a temperature-compensated surface acoustic wave filter, comprising the temperature-compensated surface acoustic wave resonator described in any embodiment of the first aspect.

[0070] The above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit them. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A temperature-compensated surface acoustic wave resonator, characterized in that: include: Substrate (1); An interdigital transducer (2) is arranged on a side surface of the substrate (1) along the thickness direction, the interdigital transducer (2) comprising a plurality of long finger electrodes (21), the long finger electrodes (21) comprising a first long finger electrode (211) and a second long finger electrode (212) arranged crosswise along a second direction (Y); the first long finger electrode (211) and the second long finger electrode (212) both extend along the second direction (Y) and are arranged along a first direction (X); A reflection grating region (3) is arranged on a surface of one side of the substrate (1) along the thickness direction and is in the same plane as the interdigital transducer (2); along the first direction (X), the reflection grating region (3) is at least arranged on one side of the interdigital transducer (2); the reflection grating region (3) comprises a plurality of reflection gratings (31) extending along the second direction (Y); at least one first load structure (4) is arranged on a side of the long finger electrode (21) away from the substrate (1) in the thickness direction, and an orthographic projection of the first load structure (4) on the substrate (1) at least partially overlaps with an orthographic projection of at least one of the long finger electrodes (21) on the substrate (1); at least one second load structure (5) is arranged on a side of the first load structure (4) away from the long finger electrode (21) in the thickness direction, and an orthographic projection of the second load structure (5) on the substrate (1) at least partially overlaps with an orthographic projection of at least one first load structure (4) on the substrate (1); at least one third load structure (6) disposed on a side of the reflective grating (31) away from the substrate (1) in the thickness direction, and an orthographic projection of the third load structure (6) on the substrate (1) at least partially overlaps with an orthographic projection of the reflective grating (31) on the substrate (1); A temperature compensation layer (7) is arranged on a side of the interdigital transducer (2) away from the substrate (1) along the thickness direction; The first direction (X) intersects with the second direction (Y).

2. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: Along the second direction (Y), the first long finger electrode (211) comprises a first end portion close to a side of the second long finger electrode (212) and a second end portion away from a side of the second long finger electrode (212); The orthographic projection of at least part of the first load structure (4) on the substrate (1) overlaps with the orthographic projection of the first end on the substrate (1); The second long finger electrode (212) comprises a third end portion close to a side of the first long finger electrode (211) and a fourth end portion far from a side of the first long finger electrode (211); An orthographic projection of at least part of the first load structure (4) on the substrate (1) overlaps with an orthographic projection of the third end on the substrate (1).

3. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The interdigital transducer (2) further comprises a bus bar (22); The bus bar (22) comprises a first bus bar (221) and a second bus bar (222) which are arranged opposite to each other along the first direction (X); the first bus bar (221) and the second bus bar (222) both extend along the second direction (Y); The second end of the first long finger electrode (211) is connected to the first bus bar (221); The fourth end of the second long finger electrode (212) is connected to the second bus bar (222).

4. The temperature-compensated surface acoustic wave resonator according to claim 2, characterized in that: At least part of the orthographic projection of the second load structure (5) on the substrate (1) completely overlaps with the orthographic projection of the first load structure (4) on the substrate (1).

5. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The dimension of the first load structure (4) along the second direction (Y) is a first dimension L, and the value range of the first dimension L is: 0.3λ≤L≤0.9λ, wherein λ is the wavelength of the surface acoustic wave.

6. The temperature-compensated surface acoustic wave resonator according to claim 5, characterized in that: The dimension of the second load structure (5) along the second direction (Y) is a second dimension N, and the second dimension N and the first dimension L satisfy the following relationship: L<N≤2L.

7. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The size of the first load structure (4) along the first direction (X) is equal to the size of the bus bar (22) along the first direction (X).

8. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The size of the second load structure (5) along the first direction (X) is equal to the size of the bus bar (22) along the first direction (X).

9. The temperature-compensated surface acoustic wave resonator according to claim 6, characterized in that: The dimension of the third load structure (6) along the second direction (Y) is a third dimension J, and the third dimension J and the first dimension L satisfy the following relationship: L<J≤1.5L.

10. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The dimension of the third load structure (6) along the first direction (X) is a fourth dimension M, and the fourth dimension M is equal to the dimension of the reflective grating area (3) along the first direction (X).

11. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: Along the second direction (Y), the edge of the second supporting structure (5) on the side away from the center of the aperture is aligned with the edge of the first supporting structure (4) on the side away from the center of the aperture.

12. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: Along the second direction (Y), the edge of the third supporting structure (6) on the side away from the center of the aperture is aligned with the edge of the first supporting structure (4) on the side away from the center of the aperture.

13. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: The first load structure (4), the second load structure (5) and the third load structure (6) are all arranged inside the temperature compensation layer (7) along the thickness direction.

14. The temperature-compensated surface acoustic wave resonator according to claim 1, characterized in that: At least part of the orthographic projection of the second load structure (5) on the substrate (1) overlaps with the orthographic projection of the reflective grating region (3) on the substrate (1).

15. The temperature-compensated surface acoustic wave resonator according to claim 14, characterized in that: Along the first direction (X), the end of the second load structure (5) is aligned with a boundary of the reflection grating region (3) away from the interdigital transducer (2).

16. A temperature-compensated surface acoustic wave filter, characterized in that: The invention comprises the temperature-compensated surface acoustic wave resonator according to any one of claims 1 to 15.

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