Dual-channel millimeter wave transmitter, receiver and transceiver system

Abstract

The invention discloses a dual-channel millimeter wave transmitter, a receiver and a transceiver system. The transmitter comprises a baseband signal processing circuit, a local oscillator signal processing circuit and a radio frequency front-end circuit comprising a high-frequency channel power amplifier, a low-frequency channel power amplifier and a signal synthesis switching circuit. The radio frequency front-end circuit selectively outputs signals of a high-frequency channel or a low-frequency channel through the signal synthesis switching circuit, and a current adjusting circuit is arranged in the baseband signal processing circuit and used for adjusting mismatch of a switching tube in the mixer. The disclosure also provides a dual-channel millimeter wave receiver and transceiver system based on the same concept. According to the invention, the problem of performance bottleneck of a single-channel transceiver in broadband application is solved, the system linearity is improved, the processing capability of high-order modulation signals is improved, and high power efficiency and high integration level are maintained through optimized circuit design.

Description

Technical Field

[0001] The present disclosure relates to the field of radio frequency / millimeter wave / terahertz integrated circuits, and in particular to a dual-channel millimeter wave transmitter, receiver, and transceiver system. Background Art

[0002] In today's era of high-speed communications, with the rapid development of wireless communication technology, the demand for high data transmission rates and spectrum efficiency is increasing. Advances in radio frequency (RF), millimeter wave (mmWave) and terahertz (THz) integrated circuit technologies have made it possible to develop higher frequency and wider bandwidth communication systems. These high-frequency communication systems play a vital role in 5G and future 6G networks, promoting the realization of high-speed data transmission and large-scale connections.

[0003] Traditional transceivers mostly use superheterodyne architecture, which is gradually replaced by direct conversion architecture due to its complex structure and high power consumption. Direct conversion architecture simplifies the system structure, reduces power consumption, and improves spectrum utilization by directly modulating the baseband signal onto the RF signal (transmitting) or converting the RF signal directly to the baseband (receiving). However, direct conversion transceivers working in high frequency bands still face many challenges:

[0004] In terms of transmitters, traditional single-channel transmitters have the following problems: To cover a wide frequency band, it is often necessary to increase the bandwidth of the power amplifier, which will lead to reduced efficiency and linearity of the power amplifier. In addition, when processing high-frequency signals, it is difficult to strike a balance between high output power and good linearity, which limits the processing capability of high-order modulated signals.

[0005] In terms of receivers, traditional single-channel receivers also have similar limitations: in order to cover a wide frequency band, the bandwidth of the low-noise amplifier needs to be increased, which will lead to an increase in noise figure and a decrease in linearity. At the same time, when processing high-frequency signals, it is difficult to strike a balance between high sensitivity and good linearity, which affects the quality of signal reception.

[0006] In summary, existing transceivers generally have performance bottlenecks in broadband applications. Especially when supporting high-order modulation, it is difficult for the transmitter to simultaneously guarantee high output power and good linearity, and it is difficult for the receiver to simultaneously achieve high sensitivity and excellent linearity. These problems have seriously restricted the development of high-speed communication systems, and a new technical solution is urgently needed to solve them. Summary of the invention

[0007] The disclosed embodiments propose a dual-channel millimeter wave transmitter, receiver and transceiver system, which can effectively solve the performance bottleneck problem existing in the traditional single-channel structure in wide-band applications through frequency division processing and selective switching of high and low frequency channels, and significantly improve the linearity and power efficiency of the system.

[0008] According to one embodiment of the present disclosure, a dual-channel millimeter wave transmitter is proposed, including a baseband signal processing circuit, a local oscillator signal processing circuit and a radio frequency front-end circuit, wherein:

[0009] The baseband signal processing circuit is used to receive a baseband signal;

[0010] The local oscillator signal processing circuit is used to provide a local oscillator signal to the radio frequency front-end circuit;

[0011] The radio frequency front end circuit comprises:

[0012] A mixer, used for up-converting the baseband signal output by the baseband signal processing circuit into a high-frequency signal and a low-frequency signal under the action of a local oscillator signal;

[0013] A high-frequency channel power amplifier receives the high-frequency signal output by the mixer, wherein the high-frequency channel power amplifier includes a multi-stage fully differential common-source amplifier, each stage of which is connected via a transformer matching network;

[0014] A low-frequency channel power amplifier receives the low-frequency signal output by the mixer, wherein the low-frequency channel power amplifier includes at least one stage of common-source amplifier; and

[0015] The signal synthesis switch circuit is connected to the output ends of the high-frequency channel power amplifier and the low-frequency channel power amplifier, and is used to selectively output the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier when working in different frequency bands.

[0016] In some implementations, the mixer includes a switch tube, and the RF front-end circuit further includes a current regulating circuit connected to the mixer, wherein the current regulating circuit is used to adjust the mismatch of the switch tube in the mixer.

[0017] In some implementations, the signal synthesis switch circuit includes a plurality of switch tubes for selectively conducting the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to an operating frequency control signal.

[0018] In some implementations, the high frequency channel power amplifier includes an automatic frequency locking circuit for achieving frequency locking of the high frequency channel power amplifier.

[0019] In some implementations, the RF front-end circuit further includes a power synthesis circuit disposed between the mixer and the high-frequency channel power amplifier.

[0020] In some implementations, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are respectively used to up-convert the signals of the high-frequency channel and the low-frequency channel.

[0021] In some embodiments, the high frequency channel power amplifier includes a three-stage fully differential common source amplifier, and / or the low frequency channel power amplifier includes a two-stage common source amplifier.

[0022] According to an embodiment of the present disclosure, a dual-channel millimeter wave receiver is proposed, including a radio frequency front-end circuit, a local oscillator signal processing circuit and a baseband signal processing circuit, wherein:

[0023] The RF front-end circuit includes a signal distribution switch circuit, a high-frequency channel low-noise amplifier, a low-frequency channel low-noise amplifier and a mixer, wherein:

[0024] The signal distribution switch circuit is used to selectively transmit the input radio frequency signal to the high-frequency channel low-noise amplifier or the low-frequency channel low-noise amplifier when operating in different frequency bands;

[0025] The high-frequency channel low-noise amplifier includes a multi-stage common-source common-gate amplifier;

[0026] The low-frequency channel low-noise amplifier comprises at least one stage of common-source amplifier; and

[0027] The mixer is connected to the output ends of the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier respectively, and receives the local oscillator signal provided by the local oscillator signal processing circuit to down-convert the radio frequency signal into a baseband signal;

[0028] The local oscillator signal processing circuit is used to provide a local oscillator signal to the mixer; and

[0029] The baseband signal processing circuit is connected to the output end of the mixer and is used to output the baseband signal. The baseband signal processing circuit includes a variable gain amplifier.

[0030] In some implementations, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are used to down-convert the signals of the high-frequency channel and the low-frequency channel, respectively.

[0031] In some embodiments, the variable gain amplifier is used to dynamically adjust the gain according to the strength of the input signal.

[0032] In some embodiments, the low-frequency channel low noise amplifier includes an adjustable active balun circuit for converting a single-ended signal into a differential signal.

[0033] In some embodiments, the RF front-end circuit includes a matching network disposed before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier.

[0034] In some implementations, L-type matching and transformer matching are used between stages of the multi-stage common-source and common-gate amplifiers in the high-frequency channel low-noise amplifier.

[0035] In some embodiments, the high-frequency channel low-noise amplifier includes a two-stage common-source common-gate amplifier, and / or the low-frequency channel low-noise amplifier includes a three-stage common-source amplifier.

[0036] According to an embodiment of the present disclosure, a dual-channel millimeter wave transceiver system is also proposed, and the dual-channel millimeter wave transceiver system includes the transmitter as described above and the receiver as described above.

[0037] The dual-channel architecture design proposed in this disclosure enables the transmitter / receiver to achieve ultra-wideband coverage. Through the division of labor and cooperation between high-frequency and low-frequency channels, each channel is optimized for a specific frequency band, covering multiple frequency bands from L-band to Ka-band, meeting the needs of multiple communication standards and application scenarios.

[0038] The dual-channel millimeter wave transmitter proposed in the embodiment of the present disclosure maintains good linearity while ensuring high output power through the design of a multi-stage fully differential common source amplifier in the high-frequency channel and at least one stage of common source amplifier in the low-frequency channel, in conjunction with the selective output of the signal synthesis switch circuit. The current regulation circuit in the baseband processing circuit effectively solves the mismatch problem of the mixer switch tube and further optimizes the system performance.

[0039] The dual-channel millimeter wave receiver proposed in the embodiment of the present disclosure adopts a combination of a multi-stage common-source common-gate amplifier in the high-frequency channel and at least one stage of a common-source amplifier in the low-frequency channel, in conjunction with a signal distribution switch circuit, to achieve excellent noise and linearity performance, with a noise figure of less than 6dB in the full frequency band and a third-order intermodulation point (IIP3) greater than 0dBm. The dynamic range of the system is effectively expanded through the dynamic adjustment of the variable gain amplifier.

[0040] The transmitter and receiver proposed in the embodiments of the present disclosure adopt a unified concept, which is convenient for integration into a complete transceiver system. The integrated transceiver system not only has the above advantages, but also can further optimize the resource utilization of the system and improve the overall integration through the shared design of the local oscillator signal.

[0041] The various embodiments of the present disclosure improve various performance indicators, enabling them to effectively support the high performance requirements of modern communication systems. They are not only applicable to current 5G communications, but also provide a solid technical foundation for the upcoming 6G and higher frequency band communication systems. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate embodiments consistent with the specification and, together with the description, serve to explain the principles of the specification.

[0043] Figure 1 A structural block diagram of a dual-channel millimeter wave transmitter according to an embodiment of the present disclosure is shown;

[0044] Figure 2 A schematic diagram of a TX architecture according to an exemplary embodiment of the present disclosure is shown;

[0045] Figure 3 A schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave transmitter according to an exemplary embodiment of the present disclosure is shown;

[0046] Figure 4 A structural block diagram of a dual-channel millimeter wave receiver according to an embodiment of the present disclosure is shown;

[0047] Figure 5 A schematic diagram of an RX architecture according to an exemplary embodiment of the present disclosure is shown;

[0048] Figure 6 A schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave receiver according to an exemplary embodiment of the present disclosure is shown. DETAILED DESCRIPTION

[0049] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Instead, they are merely examples of devices and methods consistent with some aspects of the present disclosure as detailed in the appended claims.

[0050] See also Figure 1 As shown, according to an embodiment of the present disclosure, a dual-channel millimeter wave transmitter is provided, which adopts a direct frequency conversion architecture design. As shown in the figure, the dual-channel millimeter wave transmitter includes a baseband signal processing circuit 11, a local oscillator signal processing circuit 12 and a radio frequency front-end circuit 13.

[0051] The baseband signal processing circuit 11 is used to receive a baseband signal. The local oscillator signal processing circuit 12 is used to provide a local oscillator signal to the radio frequency front-end circuit 13.

[0052] The RF front-end circuit 13 includes a mixer 134 , a high-frequency channel power amplifier 131 , a low-frequency channel power amplifier 132 and a signal synthesis switch circuit 133 .

[0053] The mixer 134 is used to up-convert the baseband signal output by the baseband signal processing circuit 11 into a high-frequency signal and a low-frequency signal under the action of the local oscillator signal.

[0054] The high frequency channel power amplifier 131 receives the high frequency signal in the RF signal output by the mixer 134. The high frequency channel power amplifier 131 includes a multi-stage fully differential common source amplifier, and each stage is connected through a transformer matching network. The low frequency channel power amplifier 132 receives the low frequency signal in the RF signal output by the mixer 134. The low frequency channel power amplifier 132 includes at least one stage of common source amplifier.

[0055] The signal synthesis switch circuit 133 is connected to the output ends of the high frequency channel power amplifier 131 and the low frequency channel power amplifier 132, and is used to selectively output the output signal of the high frequency channel power amplifier 131 or the low frequency channel power amplifier 132 when working in different frequency bands.

[0056] Millimeter wave transmitters in the existing technology mostly use a single-channel structure, which has limitations in wide-band coverage. To cover a wider frequency band, it is often necessary to increase the bandwidth of the power amplifier, which will lead to reduced efficiency and linearity of the power amplifier. In addition, when processing high-frequency signals, traditional single-channel transmitters have difficulty in achieving a balance between high output power and good linearity.

[0057] like Figure 1 The RF front-end circuit 13 of the transmitter shown adopts an innovative dual-channel architecture. The design of this dual-channel architecture enables the transmitter to flexibly select the optimal signal processing channel according to the operating frequency band, overcoming the performance bottleneck of the single-channel structure in wide-band applications.

[0058] In the RF front-end circuit 13, the high-frequency channel power amplifier 131 adopts a multi-stage fully differential common source amplifier structure, and adjacent stages are connected through a transformer matching network. The multi-stage fully differential common source amplifier can meet the requirements of high gain or high linearity at the same time. The fully differential common source amplifier is conducive to suppressing common mode noise and improving anti-interference ability, which is particularly important in the high frequency band, and is also conducive to improving the linearity of the power amplifier and providing a larger output swing. Through the cooperation of the transformer matching network between each stage, the impedance matching can be optimized step by step, the power transmission efficiency can be improved, and the high-frequency performance can be further improved. In some embodiments, the high-frequency channel power amplifier 131 can adopt a three-stage fully differential common source amplifier structure. After a lot of research, the inventor believes that the total gain can be reasonably distributed through three-stage amplification, and the gain of each stage is moderate, which avoids the stability problem caused by the excessive gain of a single stage, and is more conducive to obtaining sufficient gain in the high frequency band while maintaining good linearity.

[0059] The low frequency channel power amplifier 132 may include at least one common source amplifier. In some embodiments, the low frequency channel power amplifier may include a two-stage common source amplifier. After extensive research, the inventor believes that compared with the high frequency channel, the low frequency signal processing is less difficult, and the two-stage structure can achieve a good balance in terms of optimizing noise performance, providing power gain, and reducing circuit complexity, cost, and power consumption.

[0060] The signal synthesis switch circuit 133 is connected to the output ends of the two power amplifiers 131 and 132, and can dynamically select the appropriate channel output according to the working frequency band to achieve the optimal power output effect. Through the dynamic selection mechanism of the signal synthesis switch circuit 133, the transmitter can always work in the optimal state, ensuring that the best output performance can be obtained in different frequency bands, which is particularly important for supporting high-order modulation methods such as 16QAM and 1024QAM.

[0061] In some implementations, the baseband signal processing circuit 11 may receive four IQ differential input signals.

[0062] In some implementations, the local oscillator signal processing circuit generates a high-frequency local oscillator signal and a low-frequency local oscillator signal, and up-converts the signals of the high-frequency channel and the low-frequency channel respectively.

[0063] In some implementations, the mixer includes a switch tube, and the RF front-end circuit further includes a current regulating circuit connected to the mixer, wherein the current regulating circuit is used to adjust the mismatch of the switch tube in the mixer.

[0064] In millimeter wave transmitters, the performance of the mixer directly affects the linearity and spectral purity of the system. In traditional mixer designs, due to the imperfections in the process and the differences in the characteristics of the devices themselves, there are often mismatch problems in the switch tubes, which can lead to increased carrier leakage, destroyed sideband balance and other problems. According to this embodiment, a current regulation circuit is innovatively introduced into the mixer. For example, the mixer may adopt a passive mixing structure, including multiple switch tubes for modulating the baseband signal onto a radio frequency carrier. The switch tubes may be arranged in the form of differential pairs. The current regulation circuit may be connected to the differential pair of switch tubes of the mixer, and the characteristic differences between the switch tubes may be compensated by adjusting the current flowing through each switch tube.

[0065] By introducing a current regulation circuit into the mixer design, carrier leakage can be significantly improved, sideband balance can be improved, and the nonlinear distortion of the mixer can be reduced, which is beneficial to the processing of high-order modulated signals. It can also adapt to changes in temperature and working conditions through dynamic adjustment. At the same time, the design is simple and maintains a high degree of integration.

[0066] In some implementations, the signal synthesis switch circuit includes a plurality of switch tubes for selectively conducting the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to an operating frequency control signal.

[0067] The signal synthesis switch circuit 133 is located at the output end of the high-frequency channel power amplifier 131 and the low-frequency channel power amplifier 132. The circuit realizes the selective conduction of the output signals of the two channels through the combination of multiple switch tubes. According to the different operating frequencies, the system will generate corresponding control signals to ensure that the optimal signal path is selected in each frequency band.

[0068] According to this implementation, through the selective conduction mechanism, efficient transmission of signals in different frequency bands is achieved, mutual interference between signals of the two channels is avoided, and the system can always operate in an optimal state.

[0069] In some implementations, the high frequency channel power amplifier includes an automatic frequency locking circuit for achieving frequency locking of the high frequency channel power amplifier.

[0070] An automatic frequency locking circuit (AFL) may be provided in the high frequency channel power amplifier 131, and the circuit is cascade-connected to the high frequency channel power amplifier 131. During the high frequency signal amplification process, the automatic frequency locking circuit is used to monitor and adjust the operating frequency of the high frequency channel power amplifier 131 to ensure that the system can operate stably in the high frequency band, thereby improving the frequency stability of the high frequency channel and ensuring that the power amplifier operates at the optimal frequency point.

[0071] In some implementations, the RF front-end circuit further includes a power synthesis circuit disposed between the mixer and the high-frequency channel power amplifier.

[0072] According to this embodiment, the signal output by the mixer is synthesized by the power synthesis circuit and then transmitted to the high-frequency channel power amplifier, thereby further optimizing the signal transmission of the high-frequency channel and improving the power transmission efficiency.

[0073] Figure 2 FIG. 2 shows a schematic diagram of a TX architecture according to an exemplary embodiment of the present disclosure. Figure 2As shown, the TX chip includes four baseband input interfaces TX_IN. Each input signal is connected to a 3 / 20 / 40 frequency division circuit after passing through an attenuator ATT to correspond to different frequency band requirements. The local oscillator input LO is processed and divided into two local oscillator signals, HF_LO and LF_LO, and is supplied to different mixers through a distribution network. The baseband signal and the local oscillator signal are input to four I / Q mixers, and the four I / Q mixers are arranged symmetrically. Among them, the upper two I / Q mixers receive the HF_LO local oscillator signal, and the lower two I / Q mixers receive the LF_LO local oscillator signal. The outputs of the upper two I / Q mixers are connected to the high-frequency channel power amplifier PA_H after power synthesis (Power Comb.). The output of the lower I / Q mixer is connected to the low-frequency channel power amplifier PA_L, and PA_L includes an SPI+RDAC configuration circuit for amplifier parameter adjustment. The outputs of the two power amplifiers are connected to the TX_OUT output terminal through a switch, and the signal selected by the switch is transmitted through the output matching network.

[0074] Figure 3 FIG. 2 shows a schematic diagram of a radio frequency front-end circuit according to an exemplary embodiment of the present disclosure. Figure 3 As shown, the RF front-end circuit includes four parts marked by dashed boxes. The AFL circuit in the upper left corner (black dashed box) includes three voltage input terminals of VF, VL and VDD, and a bias resistor VB. The PA_HIGH part (black dashed box) includes two-stage amplifiers AMP1 and AMP2, and two symmetrically arranged AFL circuits are set after AMP2. An LC matching network is set at the input end of the PA_LOW part (black dashed box), including a combination of inductors and capacitors, and also includes an amplifier unit AMP3. The output matching network (OutputMatching Network, orange dashed box) connects the outputs of the two power amplifiers, is provided with an LF / HF switch for selective output, and is finally connected to the RF_OUT output terminal.

[0075] The dual-channel millimeter-wave transmitter system proposed in this embodiment achieves ultra-wideband coverage from the S band to the Ka band through innovative high- and low-frequency channel structure designs. The system adopts a combination of high-frequency channel power amplifiers and low-frequency channel power amplifiers, and cooperates with signal synthesis switch circuits to enable each channel to perform at its best in the optimal operating frequency band. The high-frequency channel adopts a multi-stage fully differential common-source amplifier structure, which is combined with an automatic frequency locking circuit to effectively improve the high-frequency signal processing capability; the low-frequency channel adopts at least one stage of common-source amplifier structure to simplify the circuit design while ensuring performance. The innovative introduction of a current regulation circuit in the baseband processing circuit effectively solves the mixer switch tube mismatch problem and improves the system linearity. In addition, the present disclosure also optimizes the signal transmission efficiency through the design of a power synthesis circuit.

[0076] This architectural design enables the transmitter system to support high-order modulation methods from 16QAM to 1024QAM, significantly improving data transmission rate and spectrum efficiency. At the same time, through the optimized design of each functional module, the system reduces power consumption while ensuring high performance, improving overall power efficiency. The design of the transmitter system fully considers the integration requirements, while achieving ultra-wideband coverage and high-order modulation support, it maintains a high degree of integration. The transmitter that realizes the above technical features is not only suitable for current 5G communications, but also reserves development space for the upcoming 6G and higher frequency band communication systems. By providing ultra-wideband and efficient communication capabilities, it lays a solid foundation for future wireless communication technology and provides important technical support for the development of wireless communication technology.

[0077] See also Figure 4 As shown, the present disclosure also provides a dual-channel millimeter wave receiver. Millimeter wave receivers in the prior art mostly adopt a single-channel structure, which has limitations in wide-band coverage. If a wider frequency band is to be covered, it is often necessary to increase the bandwidth of the low-noise amplifier, which will lead to an increase in noise figure and a decrease in linearity. In addition, when processing high-frequency signals, it is difficult for traditional single-channel receivers to strike a balance between high sensitivity and good linearity.

[0078] The present disclosure proposes Figure 4 The receiver shown includes a radio frequency front-end circuit 21, a local oscillator signal processing circuit 22, and a baseband signal processing circuit 23. The radio frequency front-end circuit 21 adopts an innovative dual-channel architecture, including a signal distribution switch circuit 213, a high-frequency channel low-noise amplifier 211, a low-frequency channel low-noise amplifier 212, and a mixer 214. The design of this dual-channel architecture enables the receiver to flexibly select the optimal signal processing channel according to the operating frequency band, overcoming the performance bottleneck of a single-channel structure in wide-band applications.

[0079] The signal distribution switch circuit 213 is connected to the input end, and is used to selectively direct the input RF signal to the high frequency or low frequency channel according to the working frequency band. The high frequency channel low noise amplifier 211 adopts a multi-stage common source and common gate amplifier structure, which has excellent noise performance and gain characteristics in the high frequency band. The low frequency channel low noise amplifier 212 adopts at least one stage of common source amplifier structure, which simplifies the circuit complexity while ensuring sufficient gain. The mixer 214 is connected to the output ends of the high frequency channel low noise amplifier 211 and the low frequency channel low noise amplifier 212 respectively.

[0080] The local oscillator signal processing circuit 22 is used to provide a local oscillator signal to the mixer 214 to convert the radio frequency signal into a baseband signal.

[0081] The variable gain amplifier in the baseband signal processing circuit 23 is arranged at the output end, and adapts to input signals of different strengths by dynamically adjusting the gain, thereby expanding the dynamic range of the system.

[0082] The dual-channel millimeter wave receiver proposed in this embodiment solves the problem that it is difficult for a single-channel receiver to simultaneously take into account wide-band coverage and high performance through the cooperation of a dual-channel architecture and a signal distribution switch. Each channel can be optimized for a specific frequency band to achieve wide-band coverage while ensuring performance. The high-frequency channel adopts a multi-stage common-source and common-gate amplifier structure, which significantly improves the reception performance of high-frequency signals. This structure not only provides good gain, but also maintains a low noise figure in the high-frequency band. The low-frequency channel adopts a common-source amplifier structure, which simplifies the circuit structure and reduces power consumption while meeting the low-frequency signal processing requirements. This structure can still maintain good noise and linearity performance in the low-frequency band. By setting a variable gain amplifier at the output end, the system can dynamically adjust the gain according to the input signal strength, which not only improves the dynamic range of the receiver, but also ensures the stability of the signal quality.

[0083] In some implementations, the local oscillator signal processing circuit includes a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are used to down-convert the signals of the high-frequency channel and the low-frequency channel, respectively.

[0084] According to this embodiment, the local oscillator signal processing circuit 22 can generate a high-frequency local oscillator signal HF_LO and a low-frequency local oscillator signal LF_LO. The high-frequency local oscillator signal HF_LO is connected to the mixer of the high-frequency channel, and the low-frequency local oscillator signal LF_LO is connected to the mixer of the low-frequency channel, and is used to perform down-conversion processing on the corresponding frequency band signals. This embodiment optimizes the down-conversion efficiency of each channel by providing corresponding local oscillator signals for the high-frequency channel and the low-frequency channel respectively, avoids the problem that a single local oscillator signal is difficult to cover a wide frequency band, improves the frequency selectivity of the system, reduces crosstalk interference between channels, and is also conducive to the system maintaining stable working performance in different frequency bands.

[0085] In some embodiments, the variable gain amplifier is used to dynamically adjust the gain according to the strength of the input signal.

[0086] The variable gain amplifier (VGA) in the baseband signal processing circuit 21 is arranged at the output end. According to the present embodiment, the VGA dynamically adjusts its gain according to the strength of the input signal, so that it can provide a larger gain to ensure the signal quality when a weak signal is received, and reduce the gain to avoid distortion when a strong signal is received. This is conducive to expanding the dynamic range of the receiver, enabling the system to process input signals of different strengths at the same time, and optimizing the signal output quality.

[0087] In some embodiments, the low-frequency channel low noise amplifier includes an adjustable active balun circuit for converting a single-ended signal into a differential signal.

[0088] The adjustable active balun circuit is used to convert the single-ended input signal into a differential signal output. Its adjustable characteristics enable the system to adjust the balance of the converted differential signal. Converting the single-ended signal into a differential signal improves the anti-interference ability of the system, and optimizes the balance of the differential signal through the adjustable function, which is beneficial to improve the noise performance of the low-frequency channel.

[0089] In some embodiments, the RF front-end circuit includes a matching network, which is arranged before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier. The matching network can be designed together with the signal distribution switch circuit. The matching network can be used to perform impedance matching between the input RF signal and the amplifier, improving the input matching performance of the system under a wide frequency band.

[0090] In some implementations, L-type matching and transformer matching are used between stages of the multi-stage common-source and common-gate amplifiers in the high-frequency channel low-noise amplifier.

[0091] According to this embodiment, the impedance matching between stages is optimized, which helps to maintain good gain characteristics in the high frequency band and is conducive to maintaining good noise performance.

[0092] Figure 5 A schematic diagram of the RX architecture according to an exemplary embodiment of the present disclosure is shown. RF_IN is the RF signal input terminal. An LF / HF switch is set at the input terminal, and the frequency division parameters of 0.03 / 15 / 40 are marked. The high-frequency channel is connected to a high-frequency low-noise amplifier (LNA_H), and the low-frequency channel is connected to a low-frequency low-noise amplifier (LNA_L). The local oscillator input LO_IN is divided into two local oscillator signals, HF_LO and LF_LO, after processing, and LNA_L includes an SPI+RDAC configuration circuit. The chip includes four I / Q mixers, of which the upper two I / Q mixers (I / Q Mixer) receive the HF_LO signal and the output signal of the high-frequency low-noise amplifier, and the lower two I / Q mixers receive the LF_LO signal. The RX chip includes a four-channel baseband differential output interface RX_OUT, and each output signal is processed by a variable gain amplifier (VGA).

[0093] Figure 6 FIG. 2 shows a schematic diagram of a radio frequency front-end circuit of a dual-channel millimeter wave receiver according to an exemplary embodiment of the present disclosure. Figure 6As shown in the figure, the RF front-end circuit includes two parts, LNA_HIGH and LNA_LOW. The LNA_HIGH part includes a two-stage common-source and common-gate amplifier. The LNA_LOW part includes a three-stage common-source amplifier. The two parts are connected through the LF / HF Switch. In addition, before the input part of LNA_HIGH and LNA_LOW, a matching network (Co-Design Matching) designed together with the LF / HF Switch is also provided, which is marked with a blue dotted box.

[0094] The dual-channel millimeter-wave receiver system proposed in this embodiment has demonstrated significant superiority in multiple technical indicators through innovative architectural design. First, the system achieves ultra-wideband coverage, which can cover multiple frequency bands from L-band to Ka-band, meeting the needs of various communication standards and application scenarios. Secondly, through the optimized design of high and low frequency channels, the system achieves excellent performance indicators in the full frequency band: the noise figure is less than 6dB, ensuring high-sensitivity reception of high-frequency band signals; the third-order intermodulation point (IIP3) is greater than 0dBm, which effectively suppresses nonlinear distortion and improves signal transmission quality. These performance indicators enable the system to effectively support high-order modulation methods from 16QAM to 1024QAM, significantly improving data transmission rate and spectrum efficiency.

[0095] In addition, this embodiment fully considers the integration and miniaturization requirements in circuit design. Through reasonable circuit structure design and layout planning, while achieving the above-mentioned high performance indicators, the system size and weight are effectively reduced. This high integration feature enables this embodiment to be widely used in various modern communication equipment, such as high-definition audio and video transmission, the Internet of Things, large-scale MIMO systems and other scenarios, fully meeting the dual needs of miniaturization and high performance in different applications.

[0096] In summary, this embodiment has achieved significant beneficial effects in ultra-wideband coverage, low noise, high linearity, etc. through the innovation of dual-channel architecture, and has improved the overall performance of the millimeter wave receiver. This receiver system is not only suitable for current 5G communications, but also reserves development space for the upcoming 6G and higher frequency band communication systems. By providing ultra-wideband and efficient communication capabilities, it provides important technical support for the development of future wireless communication technologies.

[0097] In one embodiment, the present disclosure also proposes a dual-channel millimeter wave transceiver system, including the transmitter as described above and the receiver as described above. The integrated transceiver system not only has the advantages of the above aspects, but also can further optimize the resource utilization of the system and improve the overall integration through the local oscillator signal sharing design.

[0098] Each embodiment in this specification is described in a progressive manner, and the same or similar parts between the embodiments can be referred to each other, and each embodiment focuses on the differences from other embodiments. In particular, for the data processing device embodiment, since it is basically similar to the method embodiment, the description is relatively simple, and the relevant parts can be referred to the partial description of the method embodiment.

[0099] The foregoing description describes certain embodiments of the present disclosure. Other embodiments are within the scope of the following claims.

[0100] Although this specification includes many specific implementation details, these should not be interpreted as limiting the scope of any invention or the scope of protection claimed, but are mainly used to describe the features of the specific embodiments of specific inventions. Certain features described in multiple embodiments in this specification may also be implemented in combination in a single embodiment. On the other hand, the various features described in a single embodiment may also be implemented separately in multiple embodiments or in any suitable sub-combination. In addition, although features may work in certain combinations as described above and even initially claim protection, one or more features from the claimed combination may be removed from the combination in some cases, and the claimed combination may point to a sub-combination or a variation of a sub-combination.

[0101] Similarly, although operations are depicted in a particular order in the accompanying drawings, this should not be understood as requiring that these operations be performed in the particular order shown or performed sequentially, or requiring that all illustrated operations be performed to achieve the desired results. In some cases, multitasking and parallel processing may be advantageous. In addition, the separation of various system modules and components in the above-described embodiments should not be understood as requiring such separation in all embodiments, and it should be understood that the described program components and systems can generally be integrated together in a single software product, or packaged into multiple software products.

[0102] In some cases, the actions recited in the claims can be performed in a different order and still achieve the desired results. In addition, the processes depicted in the drawings do not necessarily require the specific order or sequential order shown to achieve the desired results. In some implementations, multitasking and parallel processing may be advantageous.

[0103] The above description is merely a preferred embodiment of one or more embodiments of the present specification and is not intended to limit one or more embodiments of the present specification. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of one or more embodiments of the present specification shall be included within the scope of protection of one or more embodiments of the present specification.

Claims

1. A dual-channel millimeter wave transmitter, characterized in that: It includes a baseband signal processing circuit, a local oscillator signal processing circuit and a radio frequency front-end circuit, wherein: The baseband signal processing circuit is used to receive a baseband signal; The local oscillator signal processing circuit is used to provide a local oscillator signal to the radio frequency front-end circuit; The radio frequency front end circuit comprises: A mixer, used for up-converting the baseband signal output by the baseband signal processing circuit into a high-frequency signal and a low-frequency signal under the action of a local oscillator signal; A high-frequency channel power amplifier receives the high-frequency signal output by the mixer, wherein the high-frequency channel power amplifier includes a multi-stage fully differential common-source amplifier, each stage of which is connected via a transformer matching network; A low-frequency channel power amplifier receives the low-frequency signal output by the mixer, wherein the low-frequency channel power amplifier includes at least one stage of common-source amplifier; and The signal synthesis switch circuit is connected to the output ends of the high-frequency channel power amplifier and the low-frequency channel power amplifier, and is used to selectively output the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier when working in different frequency bands.

2. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The mixer includes a switch tube, and the radio frequency front-end circuit also includes a current regulating circuit connected to the mixer, and the current regulating circuit is used to adjust the mismatch of the switch tube in the mixer.

3. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The signal synthesis switch circuit includes a plurality of switch tubes, which are used to selectively conduct the output signal of the high-frequency channel power amplifier or the low-frequency channel power amplifier according to the operating frequency control signal.

4. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The high-frequency channel power amplifier comprises an automatic frequency locking circuit for realizing frequency locking of the high-frequency channel power amplifier.

5. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The radio frequency front-end circuit also includes a power synthesis circuit, which is arranged between the mixer and the high-frequency channel power amplifier.

6. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The local oscillator signal processing circuit comprises a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are used for up-converting the signals of the high-frequency channel and the low-frequency channel respectively.

7. The dual-channel millimeter wave transmitter according to claim 1, characterized in that: The high-frequency channel power amplifier includes a three-stage fully differential common-source amplifier, and / or the low-frequency channel power amplifier includes a two-stage common-source amplifier.

8. A dual-channel millimeter wave receiver, characterized in that: It includes a radio frequency front-end circuit, a local oscillator signal processing circuit and a baseband signal processing circuit, wherein: The RF front-end circuit includes a signal distribution switch circuit, a high-frequency channel low-noise amplifier, a low-frequency channel low-noise amplifier and a mixer, wherein: The signal distribution switch circuit is used to selectively transmit the input radio frequency signal to the high-frequency channel low-noise amplifier or the low-frequency channel low-noise amplifier when operating in different frequency bands; The high-frequency channel low-noise amplifier includes a multi-stage common-source common-gate amplifier; The low-frequency channel low-noise amplifier comprises at least one stage of common-source amplifier; and The mixer is connected to the output ends of the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier respectively, and receives the local oscillator signal provided by the local oscillator signal processing circuit to down-convert the radio frequency signal into a baseband signal; The local oscillator signal processing circuit is used to provide a local oscillator signal to the mixer; and The baseband signal processing circuit is connected to the output end of the mixer and is used to output the baseband signal. The baseband signal processing circuit includes a variable gain amplifier.

9. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The local oscillator signal processing circuit comprises a high-frequency local oscillator signal generating circuit and a low-frequency local oscillator signal generating circuit, which are used for down-converting the signals of the high-frequency channel and the low-frequency channel respectively.

10. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The variable gain amplifier is used to dynamically adjust the gain according to the strength of the input signal.

11. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The low-frequency channel low-noise amplifier includes an adjustable active balun circuit for converting a single-ended signal into a differential signal.

12. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The radio frequency front-end circuit comprises a matching network, which is arranged before the high-frequency channel low-noise amplifier and the low-frequency channel low-noise amplifier.

13. The dual-channel millimeter wave receiver according to claim 8, characterized in that: L-type matching and transformer matching are used between the stages of the multi-stage common-source and common-gate amplifiers in the high-frequency channel low-noise amplifier.

14. The dual-channel millimeter wave receiver according to claim 8, characterized in that: The high-frequency channel low-noise amplifier includes a two-stage common-source common-gate amplifier, and / or the low-frequency channel low-noise amplifier includes a three-stage common-source amplifier.

15. A dual-channel millimeter wave transceiver system, characterized in that: The invention comprises a transmitter as claimed in any one of claims 1 to 7 and a receiver as claimed in any one of claims 8 to 14.

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