Display device and display device driving method

Abstract

The invention discloses a display device and a display device driving method. The display device comprises a substrate; the array layer is arranged on one side of the substrate, and the array layer comprises a thin film transistor; at least part of the electrochromic layer is arranged on the side, facing the substrate, of the thin film transistor, the electrochromic layer is at least located in the first area, and the orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate; the optical element is arranged on the side, away from the array layer, of the substrate, the optical element is located in the first area, the optical element can emit recognition light rays to the direction where the substrate is located, and the electrochromic layer is configured to absorb the recognition light rays. The electrochromic layer can prevent identification light from irradiating the thin film transistor, the problem of splash screen of the display panel due to current leakage caused by light irradiation of the thin film transistor is avoided, and the display effect and the use performance of the display panel are improved.

Description

Technical Field

[0001] The present application belongs to the field of display technology, and in particular, relates to a display device and a display device driving method. Background Art

[0002] Organic Light Emitting Diode (OLED) and flat panel display devices based on technologies such as Light Emitting Diode (LED) have been widely used in various consumer electronic products such as mobile phones, televisions, laptops, desktop computers, etc. due to their advantages such as high image quality, power saving, thin body and wide application range, becoming the mainstream in display devices.

[0003] However, the performance of current OLED display products needs to be improved.

[0004] Therefore, a new display device and a display device driving method are urgently needed. Summary of the invention

[0005] The embodiments of the present application provide a display device and a display device driving method. When the optical element emits identification light and starts working, the electrochromic layer can be converted from a transparent state to a light-absorbing state capable of absorbing the identification light. The electrochromic layer can prevent the identification light from irradiating the thin film transistor, thereby avoiding the problem of screen flickering of the display panel caused by leakage current of the thin film transistor due to being irradiated by light, thereby improving the display effect and performance of the display panel.

[0006] On the one hand, an embodiment of the present application provides a display device, including a first area and a second area adjacent to each other, the transmittance of the first area is greater than the transmittance of the second area, and the display device includes: a substrate; an array layer, arranged on one side of the substrate, the array layer including a thin film transistor; an electrochromic layer, at least partially arranged on a side of the thin film transistor facing the substrate, the electrochromic layer is at least located in the first area, and the orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate; an optical element, the optical element is arranged on a side of the substrate away from the array layer, and the optical element is located in the first area, the optical element can emit identification light in the direction of the substrate, and the electrochromic layer is configured to absorb the identification light.

[0007] According to one aspect of the present application, the electrochromic layer is arranged on the array layer; or, the electrochromic layer is arranged on the substrate; preferably, the substrate includes a substrate and at least two buffer layers arranged on one side of the substrate, the electrochromic layer and any one of the buffer layers are arranged on the same layer, or the electrochromic layer is arranged between two adjacent buffer layers; preferably, the electrochromic layer includes a first sub-portion arranged on the side of the thin film transistor facing the substrate, and a second sub-portion surrounding at least part of the side of the thin film transistor; preferably, the first sub-portion and the second sub-portion are connected; preferably, the material of the electrochromic layer includes at least one of molybdenum oxide, nickel oxide and molybdenum, and preferably, the identification light includes infrared light.

[0008] According to one aspect of the present application, it also includes a display function layer arranged on the side of the array layer away from the substrate and a signal line electrically connected to the thin film transistor or the display function layer; the electrochromic layer includes a conductive material, and at least part of the electrochromic layer forms at least part of the signal line.

[0009] According to one aspect of the present application, it further includes a first light emitting structure located in the first area, the thin film transistor includes a first transistor electrically connected to the first light emitting structure, and the first transistor is located in the first area; when the optical element is working, the first transistor is in a turned-off state; preferably, the display panel includes a first partition, the first partition includes the first area, and a portion of the second area surrounding the first area, and when the optical element is working, the thin film transistor located in the first partition is in a turned-off state;

[0010] Preferably, when the optical element is working, the thin film transistor located in the second area is in a closed state.

[0011] According to one aspect of the present application, the material of the electrochromic layer includes at least one of molybdenum oxide, nickel oxide, and molybdenum.

[0012] On the other hand, the present invention also provides a display device driving method, which is used for the display device in any of the above embodiments, and the display device driving method includes: sending a driving signal to an optical element, and the optical element emits identification light toward the position of the substrate of the display device; controlling the electrochromic layer to convert from a transparent state to a light-absorbing state, and the electrochromic layer in the light-absorbing state absorbs the identification light, wherein the transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

[0013] According to another aspect of the present application, in the light absorption state, the electrochromic layer is blue; preferably, the identification light includes infrared light.

[0014] According to another aspect of the present application, the step of sending a driving signal to the optical element so that the optical element emits an identification light in the direction of the substrate further includes: turning off the first transistor located in the first area so that the first light-emitting structure located in the first area and electrically connected to the first transistor does not emit light; preferably, the display panel includes a first partition, the first partition includes the first area, and a portion of the second area surrounding the first area, and the step of sending a driving signal to the optical element so that the optical element emits an identification light in the direction of the substrate further includes: turning off the thin film transistor located in the first partition; preferably, the step of sending a driving signal to the optical element so that the optical element emits an identification light in the direction of the substrate further includes: turning off the thin film transistor located in the second area.

[0015] According to another aspect of the present application, before the step of sending a driving signal to the optical element so that the optical element emits identification light in the direction of the substrate, it also includes: obtaining the distance between the face and the display device through a distance sensor; when the distance is less than a preset distance, sending a driving signal to the optical element so that the optical element emits identification light in the direction of the substrate, turning off the first transistor located in the first area, so that the first light-emitting structure electrically connected to the first transistor and located in the first area does not emit light.

[0016] According to another aspect of the present application, the step of sending a driving signal to the optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: at least the first area displays a dynamic picture.

[0017] On the other hand, the present invention also provides a method for preparing a display device, wherein the display device includes a first area and a second area adjacent to each other, the transmittance of the first area is greater than the transmittance of the second area, and the method for preparing the display device includes the following steps: providing a substrate; forming an electrochromic layer on one side of the substrate, wherein the electrochromic layer is at least located in the first area; forming an array layer on the side of the electrochromic layer away from the substrate, wherein the array layer includes a thin film transistor, wherein the electrochromic layer is at least partially disposed on a side of the thin film transistor facing the substrate, and an orthographic projection of the electrochromic layer on the substrate covers an orthographic projection of the thin film transistor on the substrate; providing an optical element, wherein the optical element is disposed on a side of the substrate away from the array layer, and the optical element is located in the first area, the optical element can emit identification light in the direction of the substrate, and the electrochromic layer is configured to absorb the identification light.

[0018] Compared with the prior art, the display device provided in the embodiment of the present application includes a substrate, an array layer, an electrochromic layer and an optical element. The optical element can emit identification light in the direction of the substrate. The identification light is used to realize the distance recognition, fingerprint recognition or face recognition functions of the display device. The identification light can be infrared light, laser and other light. When the optical element emits the identification light and starts working, the electrochromic layer can be converted from a transparent state to a light-absorbing state capable of absorbing the identification light, such as a blue state. Since the orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate, the electrochromic layer can be used to prevent the identification light from irradiating the thin film transistor, thereby avoiding the problem of flickering of the display panel due to leakage current caused by the thin film transistor being irradiated by light, thereby improving the display effect and performance of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0020] Figure 1 is a schematic structural diagram of a display device provided by an embodiment of the present invention;

[0021] Figure 2 An embodiment provides Figure 1 Schematic diagram of the cross-sectional structure at BB in the middle;

[0022] Figure 3 Another embodiment provides Figure 1 Schematic diagram of the cross-sectional structure at BB in the middle;

[0023] Figure 4 Yet another embodiment provides Figure 1 Schematic diagram of the cross-sectional structure at BB in the middle;

[0024] Figure 5 is a schematic structural diagram of a display device provided by an embodiment of the present invention in a working state;

[0025] Figure 6 is a schematic structural diagram of a display device in a working state provided by another embodiment of the present invention;

[0026] Figure 7 is a schematic structural diagram of a display device in a working state provided by another embodiment of the present invention;

[0027] Figure 8 is a flow chart of a display device driving method provided by an embodiment of the present invention;

[0028] Fig. 9 is a flow chart of a method for preparing a display device provided by an embodiment of the present invention;

[0029] Figures 10 to 12 It is a schematic diagram of a structure obtained by a method for preparing a display device provided in one embodiment of the present invention.

[0030] In the attached figure:

[0031] 1-substrate; 11-substrate; 12-inorganic layer; 13-buffer layer; 2-array layer; 3-electrochromic layer; 31-first sub-unit; 32-second sub-unit; 4-planarization layer; 5-pixel definition layer; 6-display function layer; 61-first electrode layer; 62-light-emitting layer; 63-second electrode layer; 7-optical element; F1-first light-emitting structure; L-signal line; T-thin film transistor; Y-active layer; G-gate; S-source; D-drain; E-first partition; AA1-first area; AA2-second area. DETAILED DESCRIPTION

[0032] The features and exemplary embodiments of various aspects of the present application will be described in detail below. In order to make the purpose, technical solutions and advantages of the present application clearer, the present application will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. It should be understood that the specific embodiments described herein are only configured to explain the present application and are not configured to limit the present application. For those skilled in the art, the present application can be implemented without the need for some of these specific details. The following description of the embodiments is only to provide a better understanding of the present application by illustrating the examples of the present application.

[0033] It should be noted that, in this article, relational terms such as first and second, etc. are only used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Moreover, the terms "include", "comprise" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, the elements defined by the statement "include..." do not exclude the presence of other identical elements in the process, method, article or device including the elements.

[0034] It should be understood that when describing the structure of a component, when a layer or a region is referred to as being "on" or "over" another layer or another region, it may mean that it is directly on the other layer or another region, or that other layers or regions are included between it and the other layer or another region. Moreover, if the component is turned over, the layer or a region will be "below" or "beneath" another layer or another region.

[0035] It is obvious to those skilled in the art that various modifications and changes can be made in the present application without departing from the spirit or scope of the present application. Therefore, the present application is intended to cover modifications and changes of the present application that fall within the scope of the corresponding claims (technical solutions for protection) and their equivalents. It should be noted that the implementation methods provided in the embodiments of the present application can be combined with each other without contradiction.

[0036] The present application provides a display device and a display device driving method. Figures 1 to 12 Various embodiments of a display device and a method for driving the display device are described.

[0037] See also Figures 1 to 3 A display device provided in an embodiment of the present application includes a first area AA1 and a second area AA2 adjacent to each other, the transmittance of the first area AA1 is greater than the transmittance of the second area AA2, and the display device includes: a substrate 1; an array layer 2, which is arranged on one side of the substrate 1, and the array layer 2 includes a thin film transistor T; an electrochromic layer 3, which is at least partially arranged on the side of the thin film transistor T facing the substrate 1, and the electrochromic layer 3 is at least located in the first area AA1, and the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1; an optical element 7, which is arranged on the side of the substrate 1 away from the array layer 2, and the optical element 7 is located in the first area AA1, the optical element 7 can emit identification light in the direction of the substrate 1, and the electrochromic layer 3 is configured to absorb the identification light.

[0038] The display device provided in the embodiment of the present application includes a substrate 1, an array layer 2, an electrochromic layer 3 and an optical element 7. The optical element 7 can emit identification light in the direction of the substrate 1. The identification light is used to realize the functions of the display device such as distance identification, fingerprint identification or face recognition. The identification light can be infrared light, laser light and the like. When the optical element 7 emits the identification light and starts working, the electrochromic layer 3 can be converted from a transparent state to a light-absorbing state capable of absorbing the identification light, such as a blue state. Since the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1, the electrochromic layer 3 can be used to prevent the identification light from irradiating the thin film transistor T, thereby avoiding the problem of flickering of the display panel due to leakage current caused by the thin film transistor T being irradiated by light, thereby improving the display effect and performance of the display panel.

[0039] Infrared ray, also known as infrared radiation, is an electromagnetic wave in the infrared band between visible light and microwaves with a wavelength range of 0.76-1000 microns. It is invisible light with a lower frequency than red light. Different colors have different absorptivity to light of different wavelengths. Generally speaking, the darker the color, the higher the absorptivity to light. In this embodiment, the electrochromic layer 3 can be controlled to be converted from a transparent state to a light-absorbing state capable of absorbing infrared light, such as a blue state, so as to improve the absorption performance of the electrochromic layer 3 for infrared light and prevent infrared light from irradiating the thin film transistor T.

[0040] In this embodiment, the display panel includes adjacent first and second areas AA1 and AA2, the transmittance of the first area AA1 is greater than the transmittance of the second area AA2, and the first area AA1 can be provided with an element having high light requirements in the optical element 7. For example, an infrared face recognition element can be provided in the first area AA1, and the infrared face recognition element can emit infrared light in the direction of the substrate 1 to realize face recognition. When the infrared light is irradiated to the thin film transistor T, the thin film transistor TT will generate leakage current, thereby affecting the performance of the thin film transistor T, and further causing the display panel to have a flickering screen problem.

[0041] To solve the above problem, in the present embodiment, when the optical element 7 emits identification light and starts working, the electrochromic layer 3 can be converted from a transparent state to a light-absorbing state capable of absorbing identification light, so that the electrochromic layer 3 can block the identification light from irradiating the thin film transistor T. When the optical element 7 does not emit identification light, that is, when fingerprint or face recognition is not being performed, the electrochromic layer 3 can be kept in a transparent state to improve the light transmittance of the display device, that is, by controlling the electrochromic layer 3, the first area AA1 of the display device can absorb the identification light in a controllable area and for a controllable time.

[0042] Optionally, the substrate 1 may be a hard substrate, such as a glass substrate, or a flexible substrate, and its material may be polyimide, polystyrene, polyethylene terephthalate, polyparaxylene, polyethersulfone or polyethylene naphthalate. The substrate 1 is mainly used to support the device disposed thereon.

[0043] Optionally, the array layer 2 includes a pixel circuit, which includes a plurality of thin film transistors T. Exemplarily, the pixel circuit disposed in the array layer 2 includes a thin film transistor T and a storage capacitor. The thin film transistor T includes an active layer Y, a gate G, a source S and a drain D.

[0044] It should be noted that the electrochromic layer 3 is arranged on the side of the thin film transistor T facing the substrate 1, that is, the electrochromic layer 3 can be arranged between the array layer 2 and the substrate 1, or, arranged in the array layer 2, between the thin film transistor T and the substrate 1, or, arranged on the substrate 1, without special limitation, as long as the electrochromic layer 3 can be used to block the light from the side of the thin film transistor T facing the substrate 1 from irradiating the thin film transistor T.

[0045] See also Figure 3 Optionally, the substrate 1 includes a double-layer substrate 11, an inorganic layer 12 arranged between the substrates 11, and at least one buffer layer 13 arranged on the side of the inorganic layer 12 facing the array layer 2. The electrochromic layer 3 can be arranged between the buffer layer 13 and the array layer 2, or between two buffer layers 13, without special limitation.

[0046] Optionally, the substrate 1 includes a substrate 11 and at least two buffer layers 13 arranged on one side of the substrate 11 , and the electrochromic layer 3 and any buffer layer 13 are arranged on the same layer, or the electrochromic layer 3 is arranged between two adjacent buffer layers 13 .

[0047] See also Figure 4 Optionally, the electrochromic layer 3 includes a first sub-portion 31 disposed on the side of the thin film transistor T facing the substrate 1 , and a second sub-portion 32 surrounding at least part of the side surface of the thin film transistor T.

[0048] It can be understood that the first sub-portion 31 can block and absorb the light from the side of the thin film transistor T toward the substrate 1, and the second sub-portion 32 can block and absorb the refracted light directed toward the side of the thin film transistor T, so as to avoid the identification light from irradiating the thin film transistor T from the side of the thin film transistor T after refraction.

[0049] Optionally, the first sub-section 31 and the second sub-section 32 are connected, and the two may be an integrated structure to ensure a shielding effect.

[0050] In some optional embodiments, the display device also includes a display function layer 6 arranged on the side of the array layer 2 facing away from the substrate 1 and a signal line L electrically connected to the thin film transistor T or the display function layer 6; the electrochromic layer 3 includes a conductive material, and at least a portion of the electrochromic layer 3 forms at least a portion of the signal line L.

[0051] In this embodiment, the signal line L can be specifically a voltage signal line L, such as a high-level voltage signal line LVDD, or a low-level voltage signal line LVSS, etc. When the electrochromic layer 3 is made of a conductive material such as metal, at least part of the electrochromic layer 3 can be used as the signal line L to simplify the preparation process and reduce production costs. Optionally, the electrochromic layer 3 can also include an organic material.

[0052] Optionally, in the direction away from the substrate 1 , the display function layer 6 may include a first electrode layer 61 , a light emitting layer 62 , and a second electrode layer 63 which are stacked.

[0053] Optionally, the light-emitting layer 62 includes one or more of an electron injection layer, an electron transport layer, a light-emitting material layer, a hole blocking layer, an electron blocking layer, a hole transport layer and a hole injection layer. The specific type of the light-emitting layer 62 can be selected without special limitation. The electron injection layer, the electron transport layer and the hole blocking layer can be arranged between the second electrode layer 63 and the light-emitting material layer. The electron blocking layer, the hole transport layer and the hole injection layer can be arranged between the first electrode layer 61 and the light-emitting material layer.

[0054] The material of the first electrode layer 61 is generally a material with a high work function to improve the hole injection efficiency, and may be gold (Au), platinum (Pt), titanium (Ti), silver (Ag), indium tin oxide (ITO), zinc tin oxide (IZO) or a transparent conductive polymer (such as polyaniline), etc. For example, the first electrode layer 61 may be made of an ITO-Ag-ITO composite material, without particular limitation.

[0055] The material of the second electrode layer 63 can be one of the metal materials such as silver (Ag), aluminum (Al), lithium (Li), magnesium (Mg), ytterbium (Yb), calcium (Ca) or indium (In), and can also be an alloy of the aforementioned metal materials, such as magnesium-silver alloy (Mg / Ag) and lithium-aluminum alloy (Li / Al), but this embodiment does not limit this.

[0056] In some optional embodiments, the display panel further includes a planarization layer 4 and a pixel definition layer 5 which are arranged on a side of the thin film transistor T facing away from the substrate 11 .

[0057] See also Figure 5 In some optional embodiments, the display device further includes a first light emitting structure F1 located in the first area AA1, the first light emitting structure F1 thin film transistor T includes a first transistor electrically connected to the first light emitting structure F1, and the first transistor is located in the first area AA1; when the optical element 7 is working, the first transistor is in a closed state.

[0058] Taking into account that the first transistor will only generate leakage current when it is working and is irradiated by the identification light, in this embodiment, the first transistor can be controlled to be in a closed state when the optical element 7 is working, that is, the first transistor does not work, and the first light-emitting structure F1 connected to the first transistor does not emit light, so that the first area AA1 is not displayed, and even if the first transistor is irradiated by the identification light emitted by the optical element 7, no leakage current will be generated, thereby avoiding the problem of screen flickering.

[0059] See also Figure 6Optionally, the display panel includes a first partition E, the first partition E includes a first area AA1, and a portion of a second area AA2 surrounding the first area AA1. When the optical element 7 is working, the thin film transistor T located in the first partition E is in a closed state, that is, the first area AA1 and a portion of the second area AA2 adjacent to the first area AA1 are not displayed, so as to avoid the problem of screen flickering when performing fingerprint or face recognition. The area F outside the first partition E can be displayed normally.

[0060] See also Figure 7 Optionally, when the optical element 7 is working, the thin film transistor T located in the second area AA2 is in a turned-off state, that is, the thin film transistor T in the entire display device is in a turned-off state when the optical element 7 is working, and the display device is in a screen-off state, avoiding the problem of screen flickering when performing fingerprint or face recognition.

[0061] Optionally, the material of the electrochromic layer 3 includes at least one of molybdenum, molybdenum oxide, and nickel oxide.

[0062] See also Figure 8 The embodiment of the present invention further provides a display device driving method, which is used for the display device in any of the above embodiments. The display device driving method includes:

[0063] S110: Sending a driving signal to the optical element 7, so that the optical element 7 emits an identification light beam toward the position of the substrate 1 of the display device;

[0064] S120: Control the electrochromic layer 3 to be converted from a transparent state to a light-absorbing state, wherein the electrochromic layer 3 in the light-absorbing state absorbs the identification light, wherein the light transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

[0065] The display device driving method provided in the embodiment of the present invention can send a driving signal to the optical element 7 when the display device performs face or fingerprint recognition, so that the optical element 7 emits recognition light toward the position of the substrate 1 of the display device, and controls the electrochromic layer 3 to be converted from a transparent state to a light-absorbing state. The electrochromic layer 3 in the light-absorbing state absorbs the recognition light. For example, the electrochromic layer 3 in the light-absorbing state is in a blue state. Since the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin-film transistor T on the substrate 1, the electrochromic layer 3 can be used to prevent the recognition light from irradiating the thin-film transistor T, thereby avoiding the problem of flickering of the display panel due to leakage current caused by the thin-film transistor T being irradiated by light, thereby improving the display effect and performance of the display panel.

[0066] When the optical element 7 does not emit identification light, that is, when fingerprint or face recognition is not performed, the electrochromic layer 3 can be placed in a transparent state to increase the light transmittance of the display device. That is, by controlling the electrochromic layer 3, the first area AA1 of the display device can absorb the identification light in a controllable area and for a controllable time.

[0067] In step S110, depending on the different identification work to be performed, the driving signal can correspond to a face recognition signal or a fingerprint recognition signal, etc. For example, when a face is recognized to be close to the display device, a driving signal can be sent to the optical element 7, and the optical element 7 emits an identification light toward the position of the substrate 1 of the display device.

[0068] In step S120, the electrochromic layer 3 can be prepared by vacuum evaporation deposition, sputtering deposition (PVD), sputtering deposition (CVD), spray pyrolysis, spray pyrolysis, anodization, hydrothermal method and solvothermal method.

[0069] The electrochromic layer 3 can be switched from a transparent state to a light-absorbing state by applying electricity and pressure to the electrochromic layer 3. In the light-absorbing state, the electrochromic layer 3 can be blue, black, gray or other colors that have a good absorption effect on the identification light.

[0070] In some optional embodiments, the step of sending a driving signal to the optical element 7 so that the optical element 7 emits identification light in the direction of the substrate 1 also includes: turning off the first transistor located in the first area AA1 so that the first light-emitting structure F1 located in the first area AA1 and electrically connected to the first transistor does not emit light.

[0071] The first transistor can be controlled to be in a closed state when the optical element 7 is working, that is, the first transistor does not work, and the first light-emitting structure F1 connected to the first transistor does not emit light, so that the first area AA1 is not displayed, and even if the first transistor is irradiated by the identification light emitted by the optical element 7, no leakage current will be generated, thereby avoiding the problem of screen flickering. Of course, according to actual needs, the thin film transistor T in the entire display device can also be in a closed state when the optical element 7 is working, that is, the display device is in a screen-off state, thereby avoiding the problem of screen flickering when performing fingerprint or face recognition.

[0072] Optionally, the display panel includes a first partition E, the first partition E includes a first area AA1, and a part of the second area AA2 surrounding the first area AA1, and the step of sending a driving signal to the optical element 7, and the optical element 7 emitting recognition light in the direction of the substrate 1, further includes: turning off the thin film transistor T located in the first partition E, that is, the first area AA1 and the part of the second area AA2 adjacent to the first area AA1 are not displayed, so as to avoid the problem of screen flickering when performing fingerprint or face recognition. The area F outside the first partition E can be displayed normally.

[0073] Optionally, the step of sending a driving signal to the optical element 7 so that the optical element 7 emits identification light in the direction of the substrate 1 further includes: turning off the thin film transistor T located in the second area AA2. That is, the thin film transistor T in the entire display device is in a turned-off state when the optical element 7 is working, and the display device is in a screen-off state, so as to avoid the problem of screen flickering when performing fingerprint or face recognition.

[0074] Optionally, the distance between the human face and the display device can be obtained through a distance sensor; when the distance is less than a preset distance, a driving signal is sent to the optical element 7, and the optical element 7 emits identification light in the direction of the substrate 1, turning off the first transistor located in the first area AA1, so that the first light-emitting structure F1 located in the first area AA1 and electrically connected to the first transistor does not emit light.

[0075] Whether the user has a need for face recognition is determined based on the distance between the face obtained by the distance sensor and the display device.

[0076] In some optional embodiments, the step of sending a driving signal to the optical element 7 so that the optical element 7 emits identification light in the direction of the substrate 1 further includes: at least the first area AA1 displays a dynamic picture.

[0077] It should be noted that when the first area AA1 displays a dynamic picture, the dynamic picture can be used to cover the screen flicker caused by the thin film transistor T being illuminated, so that the screen flicker is not obvious under the dynamic picture, and the influence of the screen flicker is weakened. At the same time, since the screen is illuminated by the recognition light, the phenomenon of the light is fully utilized to improve the screen flicker. Of course, the first area AA1 can also display a static picture, and the screen flicker caused by the thin film transistor T being illuminated is used as a special effect of the static picture displayed, that is, the screen flicker is used as a picture effect to improve the user experience.

[0078] See also Fig. 9 The embodiment of the present invention further provides a method for manufacturing a display device, wherein the display device comprises a first region and a second region adjacent to each other, the transmittance of the first region is greater than the transmittance of the second region, and the method for manufacturing the display device comprises the following steps:

[0079] S101: Provide a substrate 1, such as Fig.10 As shown;

[0080] S102: forming an electrochromic layer 3 on one side of the substrate 1, wherein the electrochromic layer is at least located in the first area AA1, such as Fig.11 As shown;

[0081] S103: forming an array layer 2 on the side of the electrochromic layer 3 facing away from the substrate 1, wherein the array layer 2 includes a thin film transistor T, and the electrochromic layer 3 is at least partially disposed on the side of the thin film transistor T facing the substrate 1, and the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1, such as Fig.12 As shown;

[0082] S104: providing an optical element 7, the optical element 7 being disposed on the side of the substrate 1 away from the array layer 2, and the optical element 7 being located in the first area AA1, the optical element 7 being able to emit identification light in the direction of the substrate 1, and the electrochromic layer 3 being configured to absorb the identification light, such as Figure 2 shown.

[0083] The display device manufacturing method provided in the embodiment of the present invention forms an electrochromic layer 3 in the first area AA1, and the orthographic projection of the electrochromic layer 3 on the substrate 1 covers the orthographic projection of the thin film transistor T on the substrate 1, so that the electrochromic layer 3 can be used to prevent the identification light from irradiating the thin film transistor T, thereby avoiding the leakage current of the thin film transistor T caused by being irradiated by light, causing the display panel to produce a flickering problem, thereby improving the display effect and performance of the display panel.

[0084] In step S101, the substrate 1 may be formed by coating or other processes. The substrate 1 may include a double-layer substrate 11, an inorganic layer 12 disposed between the substrates 11, and at least one buffer layer 13 disposed on the side of the inorganic layer 12 facing the array layer 2. The electrochromic layer 3 may be disposed between the buffer layer 13 and the array layer 2, or between two buffer layers 13, without special limitation.

[0085] In step S102 , the electrochromic layer 3 may be formed by coating, photolithography or other processes.

[0086] In step S103 , the electrochromic layer 3 includes a first sub-portion 31 disposed on a side of the thin film transistor facing the substrate, and a second sub-portion 32 surrounding at least a portion of a side surface of the thin film transistor.

[0087] It can be understood that the electrochromic layer 3 may include a first sub-portion 31 disposed on the side of the thin film transistor T facing the substrate 1 , and a second sub-portion 32 surrounding at least part of the side surface of the thin film transistor T.

[0088] In step S104, the optical element 7 may be a distance recognition element, a fingerprint recognition element, a face recognition element, etc. For example, the optical element 7 may be an infrared face recognition element.

[0089] The display device provided in the embodiment of the present invention may be an organic light-emitting diode (OLED) display device, a quantum dot light-emitting diode (QLED) or a micro flat panel display device (Micro-OLED or Micro-LED).

[0090] The display device provided in the embodiment of the present application can be applied to a mobile phone, or it can be any electronic product with a display function, including but not limited to the following categories: televisions, laptops, desktop displays, tablet computers, digital cameras, smart bracelets, smart glasses, car displays, medical equipment, industrial control equipment, touch interactive terminals, etc. The embodiment of the present application does not make any special limitations on this.

[0091] The above are only specific implementation methods of the present application. Those skilled in the art can clearly understand that for the convenience and simplicity of description, the specific working processes of the systems, modules and units described above can refer to the corresponding processes in the aforementioned method embodiments, and will not be repeated here. It should be understood that the protection scope of the present application is not limited to this. Any technician familiar with the technical field can easily think of various equivalent modifications or replacements within the technical scope disclosed in this application, and these modifications or replacements should be included in the protection scope of this application.

[0092] It should also be noted that the exemplary embodiments mentioned in this application describe some methods or systems based on a series of steps or devices. However, this application is not limited to the order of the above steps, that is, the steps can be performed in the order mentioned in the embodiment, or in a different order from the embodiment, or several steps can be performed simultaneously.

Claims

1. A display device, characterized in that: The display device comprises a first region and a second region adjacent to each other, wherein the light transmittance of the first region is greater than the light transmittance of the second region, and the display device comprises: substrate; An array layer, disposed on one side of the substrate, the array layer comprising thin film transistors; an electrochromic layer, at least partially disposed on a side of the thin film transistor facing the substrate, the electrochromic layer being at least located in the first region, and an orthographic projection of the electrochromic layer on the substrate covering an orthographic projection of the thin film transistor on the substrate; An optical element is arranged on a side of the substrate away from the array layer, and the optical element is located in the first area. The optical element can emit identification light in the direction of the substrate, and the electrochromic layer is configured to absorb the identification light.

2. The display device according to claim 1, characterized in that The electrochromic layer is disposed on the array layer; or, The electrochromic layer is disposed on the substrate; Preferably, the substrate comprises a substrate and at least two buffer layers arranged on one side of the substrate, the electrochromic layer and any of the buffer layers are arranged on the same layer, or the electrochromic layer is arranged between two adjacent buffer layers; Preferably, the electrochromic layer comprises a first sub-portion provided on a side of the thin film transistor facing the substrate, and a second sub-portion provided around at least part of a side surface of the thin film transistor; Preferably, the first sub-section and the second sub-section are connected; Preferably, the material of the electrochromic layer includes at least one of molybdenum oxide, nickel oxide, and molybdenum; Preferably, the identification light includes infrared light.

3. The display device according to claim 1, characterized in that It also includes a display function layer disposed on a side of the array layer away from the substrate, and a signal line electrically connected to the thin film transistor or the display function layer; The electrochromic layer comprises a conductive material, and at least a portion of the electrochromic layer forms at least a portion of the signal line; Preferably, the signal line includes a high-level voltage signal line or a low-level voltage signal line.

4. The display device according to claim 1, characterized in that It also includes a first light emitting structure located in the first region, the thin film transistor includes a first transistor electrically connected to the first light emitting structure, and the first transistor is located in the first region; When the optical element is working, the first transistor is in a closed state; Preferably, the display panel includes a first partition, the first partition includes the first area, and a portion of the second area surrounding the first area, and when the optical element is working, the thin film transistor located in the first partition is in a closed state; Preferably, when the optical element is working, the thin film transistor located in the second area is in a closed state.

5. A display device driving method, used for the display device according to any one of claims 1 to 4, characterized in that: The display device driving method comprises: Sending a driving signal to the optical element, the optical element emitting an identification light toward a position where a substrate of the display device is located; The electrochromic layer is controlled to be converted from a transparent state to a light-absorbing state, wherein the electrochromic layer in the light-absorbing state absorbs the identification light, wherein the light transmittance of the electrochromic layer in the transparent state is greater than or equal to 50%.

6. The display device driving method according to claim 5, characterized in that: In the light absorption state, the electrochromic layer is at least one of blue, black, and gray; Preferably, the identification light includes infrared light.

7. The display device driving method according to claim 5, characterized in that: The step of sending a driving signal to the optical element so that the optical element emits identification light in the direction of the substrate further includes: turning off the first transistor located in the first area so that the first light-emitting structure electrically connected to the first transistor and located in the first area does not emit light; Preferably, the display panel includes a first partition, the first partition includes the first area, and a portion of the second area surrounding the first area, and the step of sending a driving signal to the optical element, and the optical element emitting identification light in the direction of the substrate, further includes: turning off the thin film transistor located in the first partition; Preferably, the step of sending a driving signal to the optical element so that the optical element emits identification light in the direction of the substrate further includes: turning off the thin film transistor located in the second area.

8. The display device driving method according to claim 7, characterized in that: Before the step of sending a driving signal to the optical element so that the optical element emits identification light in the direction of the substrate, the step further includes: Acquiring the distance between the human face and the display device by using a distance sensor; When the distance is less than a preset distance, a driving signal is sent to the optical element, and the optical element emits identification light in the direction of the substrate to turn off the first transistor located in the first area, so that the first light-emitting structure located in the first area and electrically connected to the first transistor does not emit light.

9. The display device driving method according to claim 5, characterized in that: The step of sending a driving signal to the optical element, wherein the optical element emits identification light in the direction of the substrate, further includes: at least the first area displays a dynamic picture.

10. A method for preparing a display device, characterized in that: The display device comprises a first region and a second region adjacent to each other, the light transmittance of the first region is greater than the light transmittance of the second region, and the method for preparing the display device comprises the following steps: providing a substrate; forming an electrochromic layer on one side of the substrate, wherein the electrochromic layer is at least located in the first region; An array layer is formed on the side of the electrochromic layer facing away from the substrate, the array layer includes a thin film transistor, the electrochromic layer is at least partially arranged on the side of the thin film transistor facing the substrate, and the orthographic projection of the electrochromic layer on the substrate covers the orthographic projection of the thin film transistor on the substrate; An optical element is provided, wherein the optical element is disposed on a side of the substrate away from the array layer and is located in the first area. The optical element can emit identification light in the direction of the substrate, and the electrochromic layer is configured to absorb the identification light.

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