Prediction Method, Device, Equipment and Medium for Time-Dependent Breakdown Life of Insulating Dielectric Layer

Abstract

The present application relates to the technical field of process reliability testing of semiconductor devices, and discloses a method, device, equipment and medium for predicting the time-dependent dielectric breakdown (TDDB) life of an insulating dielectric layer. The method includes: performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted; determining the breakdown electric field strength of each device to be predicted according to the ramp voltage test results, the nominal thickness of the insulating dielectric layer and a specified voltage; determining the TDDB life of each insulating dielectric layer according to the electric field acceleration model corresponding to TDDB and the breakdown electric field strength of each device to be predicted; and determining the constant in the electric field acceleration model by using the TDDB test results obtained from TDDB tests on historical devices. The solution disclosed in the present application realizes the prediction of the TDDB life of the insulating dielectric layer by performing a ramp voltage test on the device to be predicted and combining the TDDB test results of historical devices, improves the prediction efficiency of the TDDB life of the insulating dielectric layer, and realizes rapid and effective TDDB life evaluation.

Description

Technical Field

[0001] The present application relates to the technical field of process reliability testing of semiconductor devices, and particularly to a method, device, equipment and medium for predicting the time-dependent dielectric breakdown life of an insulating dielectric layer. Background Art

[0002] TDDB (Time Dependent Dielectric Breakdown) is divided into TDDB of the gate oxide insulating material of the front-end device and TDDB between the metal layer and the dielectric material of the back-end. These insulating dielectric materials will undergo material degradation under long-term electric field stress conditions, resulting in short circuits, thereby affecting the normal operation of the integrated circuits and system products using the devices and causing serious failure problems. Therefore, it is particularly important to perform TDDB life tests and evaluations on the insulating dielectric layer.

[0003] Currently, when predicting the TDDB life of the insulating dielectric layer in a semiconductor device, a constant voltage is applied to the insulating dielectric layer at a certain temperature, and the leakage current passing through the insulating dielectric layer is monitored. When the leakage current exceeds a certain value, this time is determined as the time of the breakdown failure of the insulating dielectric layer, that is, the TDDB life of the insulating dielectric layer. This kind of TDDB test takes a long time and the TDDB life prediction efficiency is low.

[0004] In summary, how to improve the TDDB life prediction efficiency of the insulating dielectric layer is a technical problem that those skilled in the art need to solve urgently at present. Summary of the Invention

[0005] In view of this, the purpose of the present application is to provide a method, device, equipment and medium for predicting the time-dependent dielectric breakdown life of an insulating dielectric layer,

[0006] To achieve the above purpose, the present application provides the following technical solutions:

[0007] A method for predicting the time-dependent dielectric breakdown life of an insulating dielectric layer, comprising:

[0008] Performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain a ramp voltage test result; each of the devices to be predicted is prepared by the same process;

[0009] Determining the breakdown electric field strength corresponding to each of the devices to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage;

[0010] Obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constants in the electric field acceleration model are determined using the TDDB test results obtained from TDDB tests on historical devices, and the historical devices are fabricated using the same process as the devices to be predicted.

[0011] Optionally, the ramp voltage test results include a first breakdown voltage when a first preset proportion of the devices to be predicted break down and a second breakdown voltage of each of the devices to be predicted;

[0012] Determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage, including:

[0013] Determine the intrinsic breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness;

[0014] Determine the thickness of each insulating dielectric layer according to the second breakdown voltage of each device to be predicted and the intrinsic breakdown electric field strength;

[0015] Determine the breakdown electric field strength corresponding to each device to be predicted according to the specified voltage and the thickness of each insulating dielectric layer.

[0016] Optionally, before determining the thickness of each insulating dielectric layer according to the second breakdown voltage of each device to be predicted and the intrinsic breakdown electric field strength, further include:

[0017] Judge whether there is a situation where the second breakdown voltage of the device to be predicted is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1;

[0018] If so, eliminate the device to be predicted and its second breakdown voltage.

[0019] Optionally, when the electric field acceleration model is the E model, determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including:

[0020] Use to determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0021] Optionally, when the electric field acceleration model is When predicting the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, it includes:

[0022] Using To determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where A and Are both constants in the Model, Is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0023] Optionally, when the electric field acceleration model is Model, when predicting the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, it includes:

[0024] Using To determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where A and Are both constants in the Model, Is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0025] Optionally, using the TDDB test results obtained from TDDB testing of historical devices to determine the constants in the electric field acceleration model, including:

[0026] Performing a logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field strength and the TDDB lifetime;

[0027] Obtaining multiple sets of test data from TDDB testing of the historical devices, and fitting the linear expression model according to the multiple sets of test data to determine the constants in the electric field acceleration model; where each set of test data includes the test electric field strength and the time when the second preset proportion of the historical devices fails at the test electric field strength.

[0028] A device for predicting the time-dependent breakdown lifetime of an insulating dielectric layer, including:

[0029] A test module for performing a ramp voltage test on the insulating dielectric layers in multiple devices to be predicted to obtain ramp voltage test results; each of the devices to be predicted is fabricated using the same process;

[0030] A first determination module for determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage;

[0031] A second determination module, configured to obtain an electric field acceleration model corresponding to TDDB, and determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constant in the electric field acceleration model is determined by using the TDDB test results obtained from TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared by the same process.

[0032] An equipment for predicting the time-dependent dielectric breakdown (TDDB) lifetime of an insulating dielectric layer, comprising:

[0033] A memory, configured to store a computer program;

[0034] A processor, configured to implement the steps of the method for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer as described in any one of the above when executing the computer program.

[0035] A readable storage medium, in which a computer program is stored, and when the computer program is executed by a processor, the steps of the method for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer as described in any one of the above are implemented.

[0036] The present application provides a method, device, equipment and medium for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer. Among them, the method includes: performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain ramp voltage test results; each device to be predicted is prepared by the same process; determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal thickness of the insulating dielectric layer and the specified voltage; obtaining an electric field acceleration model corresponding to TDDB, and determining the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constant in the electric field acceleration model is determined by using the TDDB test results obtained from TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared by the same process.

[0037] In the above technical solution disclosed in this application, a ramp voltage test is performed on the insulating dielectric layer in the device to be predicted. Based on the ramp voltage test results, the nominal thickness of the insulating dielectric layer, and the specified voltage, the breakdown electric field strength corresponding to each device to be predicted is determined. The breakdown electric field strength corresponding to each device to be predicted is substituted into the electric field acceleration model corresponding to TDDB to predict the TDDB lifetime of the insulating dielectric layer in each device to be tested. Among them, the constant in the electric field acceleration model can be determined by using the TDDB test results obtained from the TDDB test on historical devices. The historical devices and the devices to be predicted are prepared using the same process. Thus, by performing a ramp voltage test on the devices to be predicted and combining the TDDB test results of the historical devices, the prediction of the TDDB lifetime of the insulating dielectric layer in the devices to be predicted is realized. Since the ramp voltage test is very fast, through this application, the time spent on predicting the TDDB lifetime of the insulating dielectric layer can be shortened, the prediction efficiency of the TDDB lifetime of the insulating dielectric layer can be improved, and the TDDB lifetime evaluation can be carried out quickly and effectively.

[0038] Additional aspects and advantages of this application will be given in part in the following description, become apparent in part from the following description, or be understood through the practice of this application. Brief Description of the Drawings

[0039] Figure 1 is a flowchart of a method for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer provided by an embodiment of this application;

[0040] Figure 2 is a schematic diagram of the cumulative failure percentage of Vramp provided by an embodiment of this application;

[0041] Figure 3 is provided by an embodiment of this application schematic diagram of the corresponding fitted straight line;

[0042] Figure 4 is a schematic structural diagram of a device for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer provided by an embodiment of this application;

[0043] Figure 5 is a schematic structural diagram of a device for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer provided by an embodiment of this application. Detailed Embodiments

[0044] TDDB refers to the breakdown that occurs when a proper constant voltage is continuously applied to the insulating dielectric layer until a short circuit is generated. TDDB is divided into TDDB of the insulating material of the front-end device gate oxide layer and TDDB between the dielectric materials between the back-end metal layers. These insulating dielectric materials will experience material degradation under long-term electric field stress conditions, resulting in short circuits, which will affect the normal operation of the integrated circuit and system products using this device, leading to serious failure problems. Therefore, the test and evaluation of the TDDB lifetime of the insulating dielectric layer are particularly important. In addition, due to the increasingly short process and chip design cycle, the requirements for the lifetime test time are also becoming stricter. How to quickly and effectively evaluate the TDDB lifetime has become a hot spot and a difficult point in the current TDDB lifetime test.

[0045] Currently, when predicting the TDDB lifetime of the insulating dielectric layer in a semiconductor device, a constant voltage is applied to the insulating dielectric layer at a certain temperature, and the leakage current passing through the insulating dielectric layer is monitored. When the leakage current exceeds a certain value, this time is determined as the time of the breakdown failure of the insulating dielectric layer, that is, the TDDB lifetime of the insulating dielectric layer. This kind of TDDB test takes a long time, and the TDDB lifetime prediction efficiency is low, which is not convenient for quickly testing and evaluating the TDDB lifetime of the newly designed wafer process.

[0046] Therefore, this application provides a method, device, equipment and readable storage medium for predicting the time-dependent breakdown lifetime of an insulating dielectric layer, which is used to improve the prediction efficiency of the TDDB lifetime of the insulating dielectric layer.

[0047] The embodiments of the present application will be described in detail below. The examples of the embodiments are shown in the drawings, where the same or similar reference numerals represent the same or similar elements or elements with the same or similar functions from beginning to end. The embodiments described below by referring to the drawings are exemplary and are intended to explain the present application, and should not be construed as a limitation to the present application.

[0048] See Figure 1 , which shows a flowchart of a method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application. A method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application may include:

[0049] S11: Perform a ramp voltage test on the insulating dielectric layer in multiple devices to be predicted, and obtain the ramp voltage test result; each device to be predicted is fabricated using the same process.

[0050] Perform a ramp voltage test (i.e., Vramp test) on the insulating dielectric layers in multiple devices to be predicted that are prepared using the same process, and obtain the ramp voltage test results. The ramp voltage test linearly ramps up the acceleration voltage from the operating voltage until the insulating dielectric layer breaks down. Its test time is very fast. It should be noted that the devices to be predicted mentioned in the embodiments of this application are specifically semiconductor devices to be predicted, such as MOS (Metal-Oxide-Semiconductor Field-Effect Transistor) devices, and the insulating dielectric layers mentioned in the embodiments of this application can specifically be gate oxide layers. Of course, they can also be other insulating dielectric layers.

[0051] Exemplarily, the ramp voltage test can be performed on the insulating dielectric layer in each device to be predicted in a manner where the voltage rise slope is 1 MV / cm·s, the step size is set according to 2% of the operating voltage V dd , starting from 0 V, and the dwell time for each voltage step is 0.1 s. For example, for a 2.5 V PMOS device, its operating voltage V dd is equal to 2.5 V, and the ramp voltage test can be performed on it according to the aforementioned parameters. Of course, the embodiments of this application do not limit the parameters such as the voltage rise slope, voltage rise step size, and dwell time for each voltage step used in the ramp voltage test, and the specific parameter values can be set according to the actual situation, etc.

[0052] Among them, the breakdown mentioned above refers to hard breakdown. Hard breakdown is a destructive breakdown that creates a permanent conductive channel between the cathode and the anode. During hard breakdown, the current changes sharply. When the leakage current increases to 1 mA (of course, this value can be changed according to the type of device to be predicted, etc.), it is considered a complete failure.

[0053] S12: Determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage.

[0054] In addition, the nominal insulating dielectric layer thickness can also be obtained. The nominal insulating dielectric layer thickness refers to the design value of the insulating dielectric layer in the device to be predicted during the process design, that is, the typical design thickness value of the insulating dielectric layer.

[0055] Moreover, the specified voltage can be obtained. Specifically, if you want to predict the time-dependent breakdown life of the insulating dielectric layer at which voltage, the corresponding voltage can be determined as the specified voltage. In order to make the prediction of the time-dependent breakdown life of the insulating dielectric layer closer to the actual use environment, the specified voltage can be no more than 1.5 times the operating voltage V dd of the device to be predicted. For example, it can be V dd ±10%V ddAny value in, of course, the specified voltage may not be limited to this.

[0056] Then, according to the nominal thickness of the insulating dielectric layer, the specified voltage, and the ramp voltage test results obtained in step S11, the breakdown electric field strength corresponding to each device to be predicted can be determined, so as to determine the TDDB lifetime of the insulating dielectric layer in each device to be predicted based on the breakdown electric field strength corresponding to each device to be predicted. Exemplarily, the thickness of the insulating dielectric layer in each device to be predicted can be determined according to the ramp voltage test results, and the breakdown electric field strength corresponding to each device to be predicted can be determined according to the thickness of the insulating dielectric layer in each device to be predicted.

[0057] S13: Obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constant in the electric field acceleration model is determined by using the TDDB test results obtained from the TDDB test of historical devices, and the historical devices and the devices to be predicted are prepared by the same process.

[0058] In the embodiment of the present application, the electric field acceleration model corresponding to TDDB can also be obtained, and the electric field acceleration model includes an electric field strength parameter, so that the breakdown electric field strength corresponding to the device to be predicted calculated in step S12 can participate in the electric field acceleration model corresponding to TDDB as the electric field strength parameter to obtain the TDDB lifetime of the corresponding insulating dielectric layer.

[0059] Among them, the above-mentioned electric field acceleration model can specifically be the E model, the 1 / E model, model, etc.

[0060] The E model is also called the Thermochemical Breakdown Model. This model assumes that the degradation and breakdown of the oxide layer over time is a thermokinetic process. The main reason may be that the interaction of dipoles under thermal stress and an applied electric field destroys the Si-O bond and causes breakdown.

[0061] The 1 / E model is also known as the Hole-Induced Breakdown Model. When electrons are injected from the polysilicon gate, some electrons with sufficiently high energy can directly cross the 3.1 eV cathode barrier and be accelerated by the electric field of SiO2 to reach the anode. Some electrons with lower energy tunnel through F-N to the conduction band of SiO2 or directly tunnel to the anode. At the standard device operating temperature (<150 °C), the number of electrons that can cross 3.1 eV can be ignored. If the electric field applied across the gate oxide is greater than 5 MV / cm, F-N tunneling will dominate, but when the gate oxide thickness is less than 5 nm, direct tunneling will become dominant. When electrons cross the oxide layer under high electric fields, they will collide with the lattice and scatter. After reaching the anode, the electrons will release energy to the lattice, causing damage to the Si-O bonds and resulting in the appearance of electron traps and hole traps. Another part of the electrons will transfer their energy to the electrons in the valence band of the anode and excite them into the conduction band, thus generating electron-hole pairs. The generated holes then tunnel back into the oxide layer to form a hole tunneling current. Since the mobility of holes is 2-3 orders of magnitude lower than that of electrons, holes are easily trapped by traps. These trapped holes generate an electric field in the oxide layer, causing the local current at the defect to continuously increase, forming a positive feedback. The number of traps increases continuously. When the traps overlap and form a conductive channel, the oxide layer is broken down.

[0062] The intrinsic breakdown of TDDB can be divided into two processes: soft breakdown and hard breakdown. During the soft breakdown process, the current basically does not change. Hard breakdown is a destructive breakdown that generates a permanent conductive channel between the cathode and the anode. During hard breakdown, the current changes sharply. The failure modes discussed in this paper are all hard breakdowns. And when the leakage current increases to 1 mA (of course, this value can be changed according to the type of device to be predicted, etc.), it is considered a complete failure.

[0063] The constants in the electric field acceleration model corresponding to TDDB can be determined using the TDDB test results obtained from TDDB tests on historical devices. Among them, the historical device and the device to be predicted are devices of the same process type, that is, the historical device and the device to be predicted are fabricated using the same process. That is to say, the constants in the electric field acceleration model can be obtained from the historical TDDB data of devices of the same process type to improve the accuracy of TDDB life prediction. That is, it is possible to obtain the TDDB test results obtained from TDDB tests on historical devices, and process the electric field acceleration model corresponding to TDDB according to the TDDB test results of the historical devices to obtain the constants in the electric field acceleration model.

[0064] On this basis, the breakdown electric field strengths corresponding to each device to be predicted obtained in step S12 can be respectively substituted into the electric field acceleration model corresponding to TDDB to correspondingly obtain the TDDB lifetimes of the insulating dielectric layers in each device to be predicted.

[0065] As can be seen from the above, in the embodiment of the present application, the TDDB lifetime of the insulating dielectric layer of the device to be predicted is predicted based on the ramp voltage test result. The method provided by the embodiment of the present application is different from the traditional TDDB test method. It is not necessary to perform the TDDB test. After only performing the ramp voltage test, based on the historical device TDDB and ramp voltage test data, the TDDB lifetime of the device to be predicted can be deduced. That is, in the embodiment of the present application, the TDDB lifetime is evaluated by combining the ramp voltage test data and the historical TDDB test result. Since the TDDB test time is much longer than the ramp voltage test time, therefore, the technical problems of long prediction period and low prediction efficiency of the TDDB lifetime of the insulating dielectric layer in semiconductor devices are solved by the method provided by the embodiment of the present application. The TDDB lifetime evaluation time is greatly shortened by the method provided by the embodiment of the present application, and rapid and effective TDDB lifetime evaluation can be realized, so as to quickly and effectively test and evaluate the TDDB lifetime of the newly designed wafer process.

[0066] In the above technical solution disclosed by the embodiment of the present application, a ramp voltage test is performed on the insulating dielectric layer in the device to be predicted. Based on the ramp voltage test result, the nominal insulating dielectric layer thickness, and the specified voltage, the breakdown electric field strength corresponding to each device to be predicted is determined. The determined breakdown electric field strength corresponding to each device to be predicted is substituted into the electric field acceleration model corresponding to TDDB to predict the TDDB lifetime of the insulating dielectric layer in each device to be predicted. Among them, the constant in the electric field acceleration model can be determined by using the TDDB test result obtained by performing the TDDB test on the historical device. The historical device and the device to be predicted are prepared by the same process. Thus, the prediction of the TDDB lifetime of the insulating dielectric layer in the device to be predicted is realized by performing the ramp voltage test on the device to be predicted and combining the TDDB test result of the historical device. Since the ramp voltage test is very fast, therefore, the time spent on predicting the TDDB lifetime of the insulating dielectric layer can be shortened by the embodiment of the present application, the prediction efficiency of the TDDB lifetime of the insulating dielectric layer is improved, and rapid and effective TDDB lifetime evaluation is realized.

[0067] A method for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, where the ramp voltage test result may include a first breakdown voltage when a first preset proportion of the devices to be predicted experience breakdown and a second breakdown voltage of each device to be predicted;

[0068] Determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness, and the specified voltage may include:

[0069] Determine the intrinsic breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness;

[0070] Determine the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted;

[0071] Determine the breakdown electric field strength corresponding to each device to be predicted according to the specified voltage and the thickness of each insulating dielectric layer.

[0072] In the embodiments of the present application, the ramp voltage test results obtained by performing a ramp voltage test on the insulating dielectric layers of multiple devices to be predicted may specifically include the first breakdown voltage when the first preset proportion of the devices to be predicted among the multiple devices to be predicted experience breakdown and the second breakdown voltage of each device to be predicted ( representing the second breakdown voltage of the i-th device to be predicted). Among them, the first preset proportion may specifically be 50%, that is, the first breakdown voltage when half of the devices to be predicted experience breakdown , of course, the first preset proportion may also be other values in (0, 100%), such as 63.2%, etc. The first breakdown voltage when the first preset proportion of the devices to be predicted experience breakdown The method may specifically be: statistically analyze the relationship between the breakdown voltage and the cumulative failure percentage. For example Figure 2 as shown, which shows the cumulative failure percentage diagram of Vramp provided by the embodiments of the present application. Among them, the abscissa is , and the ordinate is the cumulative failure percentage ( ), and obtain the breakdown voltage corresponding to the first preset proportion based on the relationship diagram between the breakdown voltage and the cumulative failure percentage, and determine this breakdown voltage as the first breakdown voltage. Of course, other methods may also be used to obtain the first breakdown voltage, and the embodiments of the present application do not limit this.

[0073] On this basis, based on formula (1) (i.e., the electric field formula): , calculate the electric field strength, where is the breakdown voltage, is the thickness of the device insulating dielectric layer, is the electric field strength. Specifically, the implementation process of determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage is as follows:

[0074] (a) According to the first breakdown voltage when the first preset proportion of the devices to be predicted experience breakdown and the nominal insulating dielectric layer thickness , use formula (2): , to calculate the inherent breakdown electric field strength . Taking as as an example, formula (2) is then .

[0075] (b) According to the second breakdown voltage of each device to be predicted , the inherent breakdown electric field strength , formula (3) is adopted: , and the thickness of the insulating dielectric layer in each device to be predicted is calculated correspondingly ( represents the thickness of the insulating dielectric layer in the i-th device to be predicted).

[0076] (c) According to the specified voltage and the thickness of the insulating dielectric layer in each device to be predicted , formula (4) is adopted: , and the breakdown electric field strength corresponding to each device to be predicted is calculated correspondingly ( represents the breakdown electric field strength corresponding to the i-th device to be predicted).

[0077] By the above method, the breakdown electric field strength corresponding to each device to be predicted is effectively and accurately calculated based on the ramp voltage test results, so as to improve the accuracy and efficiency of the TDDB life prediction of the insulating dielectric layer.

[0078] A method for predicting the time-dependent breakdown life of an insulating dielectric layer provided by an embodiment of the present application may further include before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted:

[0079] Determine whether the second breakdown voltage of the device to be predicted is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1;

[0080] If so, the device to be predicted and its second breakdown voltage are excluded.

[0081] In an embodiment of the present application, three failure types can be defined when performing a ramp voltage test on the device to be predicted: mode A, mode B, mode C, and the failure type of the device to be predicted belonging to mode A, mode B, or mode C can be determined according to the magnitude relationship between the operating voltage V dd of the device to be predicted and the breakdown voltage V bd of the device to be predicted. Specifically, the failure type where V bd < V dd is defined as mode A, and the failure type where V dd ≤ V bd ≤ p × V dd is defined as mode B, where p is a preset coefficient and p is greater than 1, for example, it can be 2.3 (of course, this value can also be adjusted by analyzing the device, etc.), and V bd>p×V dd The failure type of dd is defined as mode C. Generally, it is considered that mode A is caused by pinhole defects in the insulating dielectric layer due to environmental pollution during the wafer manufacturing process, mode B is caused by defects such as alkaline metal ions like Na, K or heavy metal ions like Fe introduced during the wafer manufacturing process, while mode C is caused by the inherent defects of the device material itself. That is to say, both mode A and mode B can be considered to be caused by the production process, and the breakdown voltages of these two failure types are very small and abnormal. However, mode C is the failure caused by the inherent characteristics of the device material itself, and its breakdown voltage is relatively large. Therefore, the failure data of mode C can be used for TDDB lifetime prediction, and the failure devices of mode A and mode B types can be excluded.

[0082] On this basis, before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted, it can also be determined whether there is a situation where the second breakdown voltage of the device to be predicted is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient (i.e., the above-mentioned p), where the preset coefficient is greater than 1.

[0083] If the second breakdown voltage of all devices to be predicted is greater than the product of the operating voltage of the device to be predicted and the preset coefficient, it indicates that the breakdowns that occur during the ramp voltage test for these devices to be predicted are all caused by the inherent faults of the device material itself. Therefore, TDDB lifetime prediction is performed on the insulating dielectric layers in these devices to be predicted based on the ramp voltage test results.

[0084] If there is a situation where the second breakdown voltage of the device to be predicted is not greater than the product of the operating voltage of the device to be predicted and the preset coefficient, it indicates that the breakdown that occurs during the ramp voltage test for the corresponding device to be predicted (i.e., the device to be predicted whose second breakdown voltage is not greater than the product of the operating voltage and the preset coefficient) is caused by the production process, rather than the inherent faults of the device material itself. In order to improve the accuracy of TDDB lifetime prediction of the insulating dielectric layer, the corresponding device to be predicted and its second breakdown voltage can be excluded, while the device to be predicted whose second breakdown voltage is greater than the product of the operating voltage and the preset coefficient and its second breakdown voltage are retained, so that the devices to be predicted whose second breakdown voltage is greater than the product of the operating voltage and the preset coefficient participate in the TDDB lifetime prediction.

[0085] Through the above method, the breakdowns caused by the production process during the ramp voltage test can be excluded, and the breakdowns caused by the inherent faults of the device material itself can be retained, thereby improving the accuracy of TDDB lifetime prediction of the insulating dielectric layer.

[0086] A method for predicting the time-dependent dielectric breakdown (TDDB) lifetime of an insulating dielectric layer provided by an embodiment of the present application. When the electric field acceleration model is the E model, the TDDB lifetime of each insulating dielectric layer can be determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, and may include:

[0087] Using to determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0088] In an embodiment of the present application, when the electric field acceleration model corresponding to TDDB is the E model, the E model is as shown in formula (5):

[0089]

[0090] Wherein, is the failure time or lifetime, is a constant, is the electric field strength, is the electric field acceleration factor, is the temperature activation energy, is the Boltzmann constant, is the Weibull shape factor, is the Kelvin temperature, is the reference area for lifetime derivation of the measured capacitor structure, is the area of the measured capacitor structure, is the Weibull cumulative distribution function. When only considering the change in the electric field, the coefficient is set, is a constant, and formula (5) is simplified to formula (6):

[0091]

[0092] Wherein, the constants A and in formula (6) are determined by using the TDDB test results obtained from TDDB tests on historical devices.

[0093] On this basis, the breakdown electric field strength corresponding to the i-th device to be predicted can be substituted into formula (6), and by using: , the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (i.e., the TDDB lifetime (or equivalent failure time) of the insulating dielectric layer in the i-th device to be predicted under the specified voltage condition) can be calculated. Specifically, according to the above breakdown electric field strength The calculation method gives: .

[0094] Through the above method, the TDDB lifetime of the insulating dielectric layer in the device to be predicted can be quickly and effectively determined when the electric field acceleration model is the E model.

[0095] A method for predicting the time-dependent dielectric breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, when the electric field acceleration model is model, determining the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted may include:

[0096] Using to determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0097] In the embodiment of the present application, when the electric field acceleration model corresponding to TDDB is model, The model is shown in formula (7):

[0098]

[0099] Among them, is the failure time or lifetime, is a constant, is the electric field factor, is the electric field strength, is the temperature activation energy, is the Boltzmann constant, is the Kelvin temperature, is the reference area for lifetime derivation of the measured capacitor structure, is the area of the measured capacitor structure, is the Weibull shape factor, is the Weibull cumulative distribution function. When only considering the change of the electric field, set the coefficient , is a constant, and formula (7) is simplified to formula (8):

[0100]

[0101] Among them, the constants A and in formula (8) are determined by using the TDDB test results obtained from TDDB tests on historical devices.

[0102] On the above basis, the breakdown electric field strength corresponding to the i-th device to be predicted can be Substitute into formula (8), and utilize: , to calculate the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (that is, the TDDB lifetime (or equivalently, the failure time) of the insulating dielectric layer in the i-th device to be predicted under the specified voltage condition). Specifically, according to the above calculation method for the breakdown electric field strength corresponding to the i-th device to be predicted, we can obtain: .

[0103] Through the above method, the TDDB lifetime of the insulating dielectric layer in the device to be predicted can be quickly and effectively determined when the electric field acceleration model is model.

[0104] A method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, when the electric field acceleration model is model, determining the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, may include:

[0105] Utilize to determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; where both A and are constants in the model, and is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0106] In an embodiment of the present application, when the electric field acceleration model corresponding to TDDB is model, the model is as shown in formula (9):

[0107]

[0108] Wherein, is the failure time or lifetime, is a constant, is the electric field acceleration factor, is the electric field strength, is the temperature activation energy, is the Boltzmann constant, is the Kelvin temperature, is the reference area for lifetime derivation of the measured capacitor structure, is the area of the measured capacitor structure, is the Weibull shape factor, is the Weibull cumulative distribution function. When only considering the change in electric field, , is a constant, and formula (9) is simplified to formula (10):

[0109]

[0110] wherein, the constants A and in formula (10) are determined by using the TDDB test results obtained from the TDDB tests on historical devices.

[0111] Based on the above, the breakdown electric field strength corresponding to the i-th device to be predicted can be substituted into formula (10), and by using: , the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted (i.e., the TDDB lifetime (or equivalent failure time) of the insulating dielectric layer in the i-th device to be predicted under the specified voltage condition) can be calculated. Specifically, according to the above calculation method of the breakdown electric field strength corresponding to the i-th device to be predicted, we can obtain: .

[0112] Through the above method, the TDDB lifetime of the insulating dielectric layer in the device to be predicted can be quickly and effectively determined when the electric field acceleration model is model.

[0113] A method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, which determines the constant in the electric field acceleration model by using the TDDB test results obtained from the TDDB tests on historical devices, may include:

[0114] Performing a logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field strength and the TDDB lifetime;

[0115] Obtaining multiple groups of test data from the TDDB tests on historical devices, and fitting the linear expression model according to the multiple groups of test data to determine the constant in the electric field acceleration model; wherein, each group of test data may include the test electric field strength and the time when a second preset proportion of historical devices fail at the test electric field strength.

[0116] In an embodiment of the present application, the specific process of determining the constant in the electric field acceleration model by using the TDDB test results obtained from the TDDB tests on historical devices may be:

[0117] Step 100: Performing a logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field strength and the TDDB lifetime.

[0118] Step 200: Obtain multiple groups of test data from the TDDB test on historical devices. Each group of test data includes the test electric field strength (i.e., the historical devices are subjected to the TDDB test using the same test electric field strength) and the time when a second preset proportion of the historical devices fails under the test electric field strength. Use the multiple groups of test data to perform linear fitting on the linear expression model between the electric field strength and the TDDB lifetime, and determine the constant in the electric field acceleration model according to the linear fitting result. Among them, the second preset proportion can be 63.2%, that is, each group of test data is (E ox-j , t63 j ), where E ox-j represents the jth test electric field strength, and t63 j represents the time when 63.2% of the historical devices fail under E ox-j .

[0119] Specifically, for the E model shown in formula (6), take the logarithm of both sides to obtain the linear expression model between and the electric field , that is, obtain formula (11): . According to formula (11), with the electric field strength E as the abscissa and the logarithm of TTF as the ordinate, and the second preset proportion being 63.2%, perform test data fitting under different electric field strength conditions through the t63 characteristic lifetime data under different electric field strengths, and obtain the two constants of the electric field acceleration factor and the constant coefficient . Exemplarily, at the maximum operating temperature of 125 °C, select three different test electric field strengths Eox for TDDB testing, obtain the t63 lifetime under each test electric field strength, and draw the fitting line according to formula (7) as shown in Figure 3 , which shows the schematic diagram of the fitting line corresponding to the provided by the embodiment of the present application. The abscissa is the test electric field strength, and the ordinate is , and the fitting line y = -4.1473x + 43.771 is obtained. Among them, the absolute value 4.1473 of the coefficient of x, which is the slope of the line, is the electric field acceleration factor , and 43.771 is the logarithm of the constant coefficient A .

[0120] For the model shown in formula (8), take the logarithm of both sides to obtain the linear expression model between and the square root of the electric field , that is, obtain formula (12): . According to formula (12), with (i.e., the square root of the electric field strength E) as the abscissa and the logarithm of TTF Taking as the ordinate and the second preset ratio as 63.2%, fitting the test data under different electric field strength conditions through the t63 characteristic lifetime data under different electric field strengths, the electric field acceleration factor and the constant coefficient these two constants.

[0121] For the model shown in formula (10), taking the logarithm of both sides, we get and the linear expression model between them, that is, formula (13) is obtained: . According to formula (13), taking the reciprocal 1 / E of the electric field strength E as the abscissa and the logarithm of TTF as the ordinate, with the second preset ratio being 63.2%, fitting the test data under different electric field strength conditions through the t63 characteristic lifetime data under different electric field strengths, the electric field acceleration factor and the constant coefficient these two constants.

[0122] Through the above method, the constants in the electric field acceleration model can be obtained quickly and accurately, so as to facilitate the quick and accurate prediction of the TDDB lifetime of the insulating dielectric layer.

[0123] The embodiment of the present application also provides a device for predicting the TDDB lifetime of an insulating dielectric layer. Refer to Figure 4 , which shows the structural schematic diagram of a device for predicting the TDDB lifetime of an insulating dielectric layer provided by the embodiment of the present application. It may include:

[0124] A test module 41 for performing a ramp voltage test on the insulating dielectric layer in a plurality of devices to be predicted to obtain a ramp voltage test result; each device to be predicted is prepared by the same process;

[0125] A first determination module 42 for determining the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test result, the nominal thickness of the insulating dielectric layer, and the specified voltage;

[0126] A second determination module 43 for obtaining the electric field acceleration model corresponding to TDDB, and determining the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained from TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared by the same process.

[0127] For the device for predicting the TDDB lifetime of an insulating dielectric layer provided by the embodiment of the present application, the ramp voltage test result may include the first breakdown voltage when the first preset ratio of the devices to be predicted breaks down and the second breakdown voltage of each device to be predicted;

[0128] The first determination module 42 may include:

[0129] A first determination unit, configured to determine the inherent breakdown electric field strength according to the first breakdown voltage and the nominal thickness of the insulating dielectric layer;

[0130] A second determination unit, configured to determine the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted;

[0131] A third determination unit, configured to determine the breakdown electric field strength corresponding to each device to be predicted according to the specified voltage and the thickness of each insulating dielectric layer.

[0132] For an insulating dielectric layer time-dependent breakdown life prediction device provided by an embodiment of the present application, the first determination module 42 may further include:

[0133] A judgment unit, configured to judge whether there is a second breakdown voltage of a device to be predicted that is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient before determining the thickness of each insulating dielectric layer according to the second breakdown voltage and the inherent breakdown electric field strength of each device to be predicted; the preset coefficient is greater than 1;

[0134] An elimination unit, configured to eliminate the device to be predicted and its second breakdown voltage if there is a second breakdown voltage of a device to be predicted that is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient.

[0135] For an insulating dielectric layer time-dependent breakdown life prediction device provided by an embodiment of the present application, when the electric field acceleration model is the E model, the second determination module 43 may include:

[0136] A fourth determination unit, configured to use to determine the TDDB life of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0137] For an insulating dielectric layer time-dependent breakdown life prediction device provided by an embodiment of the present application, when the electric field acceleration model is model, the second determination module 43 may include:

[0138] A fifth determination unit, configured to use to determine the TDDB life of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0139] A time-dependent dielectric breakdown (TDDB) life prediction device provided by an embodiment of the present application, when the electric field acceleration model is the model, the second determination module 43 may include:

[0140] A sixth determination unit, configured to use to determine the TDDB life of the insulating dielectric layer in the i-th device to be predicted ; where A and are both constants in the model, and is the breakdown electric field strength corresponding to the i-th device to be predicted.

[0141] A time-dependent dielectric breakdown (TDDB) life prediction device provided by an embodiment of the present application further includes a third determination module configured to determine the constants in the electric field acceleration model by using the TDDB test results obtained from TDDB tests on historical devices, and the third determination module may include:

[0142] A logarithmic transformation unit, configured to perform a logarithmic transformation on the electric field acceleration model to obtain a linear expression model between the electric field strength and the TDDB life;

[0143] A fitting determination unit, configured to obtain multiple sets of test data obtained from TDDB tests on historical devices, and fit the linear expression model according to the multiple sets of test data to determine the constants in the electric field acceleration model; where each set of test data may include the test electric field strength and the time when a second preset proportion of historical devices fail at the test electric field strength.

[0144] An embodiment of the present application further provides a TDDB life prediction device for an insulating dielectric layer. Referring to Figure 5 , which shows a schematic structural diagram of a TDDB life prediction device for an insulating dielectric layer provided by an embodiment of the present application, may include:

[0145] A memory 51, configured to store a computer program;

[0146] A processor 52, configured to implement the following steps when executing the computer program stored in the memory 51:

[0147] Perform a ramp voltage test on the insulating dielectric layers in multiple devices to be predicted, and obtain the ramp voltage test results; each device to be predicted is fabricated using the same process; determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage; obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constant in the electric field acceleration model is determined using the TDDB test results obtained from performing TDDB tests on historical devices, and the historical devices are fabricated using the same process as the devices to be predicted.

[0148] An embodiment of the present application also provides a readable storage medium, in which a computer program is stored. When the computer program is executed by a processor, the following steps can be implemented:

[0149] Perform a ramp voltage test on the insulating dielectric layers in multiple devices to be predicted, and obtain the ramp voltage test results; each device to be predicted is fabricated using the same process; determine the breakdown electric field strength corresponding to each device to be predicted according to the ramp voltage test results, the nominal insulating dielectric layer thickness, and the specified voltage; obtain the electric field acceleration model corresponding to TDDB, and determine the TDDB lifetime of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes an electric field strength parameter, and the constant in the electric field acceleration model is determined using the TDDB test results obtained from performing TDDB tests on historical devices, and the historical devices are fabricated using the same process as the devices to be predicted.

[0150] For the description of the relevant parts in an apparatus, device, and readable storage medium for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, reference can be made to the detailed description of the corresponding parts in a method for predicting the time-dependent breakdown lifetime of an insulating dielectric layer provided by an embodiment of the present application, which will not be elaborated here.

[0151] It should be noted that the logic and / or steps represented in the flowchart or described otherwise herein, for example, can be considered as a definite sequence list of executable instructions for implementing logical functions, and can be specifically implemented in any computer-readable medium for use by an instruction execution system, apparatus, or device (such as a computer-based system, a system including a processor, or other systems that can fetch instructions from the instruction execution system, apparatus, or device and execute the instructions), or used in combination with these instruction execution systems, apparatuses, or devices. For the purposes of this specification, a "computer-readable medium" can be any device that can contain, store, communicate, propagate, or transport a program for use by or in connection with an instruction execution system, apparatus, or device. More specific examples (a non-exhaustive list) of the computer-readable medium include the following: an electrical connection portion with one or more wirings (electronic device), a portable computer diskette (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disc read-only memory (CDROM). Additionally, the computer-readable medium can even be paper or other suitable media on which the program can be printed, because the program can be obtained electronically, for example, by optically scanning the paper or other media, followed by editing, interpretation, or other suitable processing as necessary, and then stored in a computer memory.

[0152] It should be understood that various parts of the present application can be implemented by hardware, software, firmware, or a combination thereof. In the above-described embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, any one or a combination of the following techniques well known in the art can be used: discrete logic circuits having logic gate circuits for implementing logical functions on data signals, application specific integrated circuits having appropriate combinational logic gate circuits, programmable gate arrays (PGAs), field programmable gate arrays (FPGAs), etc.

[0153] In the description of this specification, the description referring to terms such as "one embodiment", "some embodiments", "example", "specific example", or "some examples", etc. means that the specific features, structures, materials, or characteristics described in connection with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials, or characteristics described can be combined in a suitable manner in any one or more embodiments or examples.

[0154] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be construed as indicating or implying relative importance or implicitly specifying the quantity of the indicated technical features. Thus, features defined with "first" and "second" may explicitly or implicitly include at least one such feature. In the description of the present application, the meaning of "a plurality" is at least two, such as two, three, etc., unless otherwise specifically defined.

[0155] In the present application, unless otherwise clearly defined and limited, terms such as "mounted", "connected", "coupled", "fixed", etc. shall be construed in a broad sense. For example, it may be a fixed connection, a detachable connection, or integrated; it may be a mechanical connection or an electrical connection; it may be directly connected or indirectly connected through an intermediate medium, and it may be the communication inside two elements or the interaction relationship between two elements, unless otherwise clearly limited. For those of ordinary skill in the art, the specific meanings of the above terms in the present application can be understood according to specific circumstances.

[0156] Although the embodiments of the present application have been shown and described above, it can be understood that the above embodiments are exemplary and should not be construed as limiting the present application. Those of ordinary skill in the art can make changes, modifications, substitutions, and variations to the above embodiments within the scope of the present application.

Claims

1. A method for predicting the breakdown life of an insulating dielectric layer over time, characterized in that: include: Performing a ramp voltage test on the insulating dielectric layers in a plurality of devices to be predicted to obtain a ramp voltage test result; each of the devices to be predicted is prepared using the same process; Determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage; Obtaining an electric field acceleration model corresponding to TDDB, and determining the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the device to be predicted are manufactured using the same process; The ramp voltage test result includes a first breakdown voltage of a first preset ratio of the devices to be predicted when breakdown occurs and a second breakdown voltage of each of the devices to be predicted; Determining the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulating dielectric layer thickness and the specified voltage, including: Determining an inherent breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness; Determine the thickness of each of the insulating dielectric layers according to the second breakdown voltage of each of the devices to be predicted and the inherent breakdown electric field strength; The breakdown electric field strength corresponding to each of the components to be predicted is determined according to the specified voltage and the thickness of each of the insulating dielectric layers.

2. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: Before determining the thickness of each insulating dielectric layer according to the second breakdown voltage of each device to be predicted and the inherent breakdown electric field strength, the method further includes: Determine whether there is a second breakdown voltage of the device to be predicted that is not greater than the product of the operating voltage of the device to be predicted and a preset coefficient; the preset coefficient is greater than 1; If so, the device to be predicted and its second breakdown voltage are eliminated.

3. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is the E model, the TDDB life of each of the insulating dielectric layers is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each of the components to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and are constants in the E model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

4. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

5. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to claim 1, characterized in that: When the electric field acceleration model is When the model is used, the TDDB life of each insulating dielectric layer is determined according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted, including: use Determine the TDDB lifetime of the insulating dielectric layer in the i-th device to be predicted ; Among them, A and All of the above The constants in the model, is the breakdown electric field strength corresponding to the i-th device to be predicted.

6. The method for predicting the time-dependent breakdown life of an insulating dielectric layer according to any one of claims 3 to 5, characterized in that: The constants in the electric field acceleration model are determined using the TDDB test results obtained by performing TDDB tests on historical devices, including: Performing logarithmic transformation on the electric field acceleration model to obtain a linear expression model between electric field intensity and TDDB lifespan; Obtain multiple groups of test data by performing TDDB tests on the historical device, fit the linear expression model according to the multiple groups of test data, and determine the constants in the electric field acceleration model; wherein each group of the test data includes a test electric field strength and a second preset proportion of the time when the historical device fails under the test electric field strength.

7. A device for predicting the breakdown life of an insulating dielectric layer over time, characterized in that: include: A test module, used for performing a ramp voltage test on the insulating dielectric layers in the plurality of devices to be predicted, and obtaining a ramp voltage test result; Each of the devices to be predicted is prepared by the same process; A first determination module is used to determine the breakdown electric field strength corresponding to each of the components to be predicted according to the ramp voltage test result, the nominal insulation dielectric layer thickness and the specified voltage; The second determination module is used to obtain an electric field acceleration model corresponding to TDDB, and determine the TDDB life of each insulating dielectric layer according to the electric field acceleration model and the breakdown electric field strength corresponding to each device to be predicted; the electric field acceleration model includes electric field strength parameters, and the constants in the electric field acceleration model are determined by using the TDDB test results obtained by performing TDDB tests on historical devices, and the historical devices and the devices to be predicted are prepared using the same process; The ramp voltage test result includes a first breakdown voltage of a first preset ratio of the devices to be predicted when breakdown occurs and a second breakdown voltage of each of the devices to be predicted; The first determining module comprises: A first determining unit, configured to determine an inherent breakdown electric field strength according to the first breakdown voltage and the nominal insulating dielectric layer thickness; A second determining unit, configured to determine the thickness of each of the insulating dielectric layers according to the second breakdown voltage of each of the components to be predicted and the inherent breakdown electric field strength; The third determining unit is used to determine the breakdown electric field strength corresponding to each of the components to be predicted according to the specified voltage and the thickness of each of the insulating dielectric layers.

8. An insulating dielectric layer breakdown life prediction device, characterized in that: include: Memory for storing computer programs; A processor is used to implement the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer as described in any one of claims 1 to 6 when executing the computer program.

9. A readable storage medium, characterized in that: The readable storage medium stores a computer program, and when the computer program is executed by a processor, the steps of the method for predicting the time-dependent breakdown life of an insulating dielectric layer according to any one of claims 1 to 6 are implemented.

Images