A photoresist composition and a process for preparing the same

Abstract

The application provides a photoresist composition and a preparation process thereof, and the photoresist composition comprises the following raw materials in parts by weight: 80.0-100.0 parts of a solvent, 20.0-40.0 parts of a resin, 3.0-5.0 parts of a photoinitiator, 1.0-3.0 parts of a light stabilizer, 1.5-2.5 parts of an adhesion promoter, 1.0-1.5 parts of a monomer, 1.0-2.0 parts of an acid diffusion inhibitor and 0.5-2.0 parts of a leveling agent. The acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown-5 and L-ethyl lactate in a mass-volume ratio of (2-3):(1-2):(1-2). The acid diffusion speed is slowed down through the combined action of different acid diffusion inhibitors, the boundary between the exposed area and the non-exposed area is clearer, and the resolution of the photoresist is improved. The solubility of the modified methacrylic acid resin after exposure changes significantly, so that the photoresist is more easily removed in the developing solution, and the clarity and resolution of the pattern are improved.

Description

Technical Field

[0001] The present invention relates to the technical field of photoresists, and in particular to a photoresist composition and a preparation process thereof. Background Art

[0002] Photoresist, also known as photoresist, is a light-sensitive mixed liquid composition. It undergoes chemical reactions under the influence of light, producing specific physical or chemical changes. By controlling the intensity and direction of light, photoresist can be processed and manufactured. Therefore, photoresist is a key material for fine pattern processing in microelectronics technology, primarily used in the electronics and printing industries. As chip manufacturing processes continue to shrink, the resolution requirements for photoresist are becoming increasingly higher. Further improving the resolution of photoresist to accommodate more advanced chip manufacturing processes is a major challenge. Summary of the Invention

[0003] In view of this, the present invention provides a photoresist composition and a preparation process thereof to solve the above problems.

[0004] The technical solution of the present invention is achieved as follows:

[0005] A photoresist composition comprises the following raw materials in parts by weight: 80.0-100.0 parts of a solvent, 20.0-40.0 parts of a resin, 3.0-5.0 parts of a photoinitiator, 1.0-3.0 parts of a light stabilizer, 1.5-2.5 parts of a tackifier, 1.0-1.5 parts of a monomer, 1.0-2.0 parts of an acid diffusion inhibitor, and 0.5-2.0 parts of a leveling agent, wherein the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown-5, and L-ethyl lactate in a mass-to-volume ratio (g / mL) of (2-3):(1-2):(1-2).

[0006] Furthermore, the resin is a modified methacrylic resin, which is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, to obtain a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:(4-6) g / mL. The methacrylic resin solution is added dropwise to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution. The reaction temperature is set to 60-80°C, and the reaction is stirred for 20-30 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is (8-12):(4-6):(0.4-0.6). After the reaction is completed, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake; the filter cake is washed with ethanol 2-3 times, and the washed filter cake is placed in a vacuum drying oven, the drying temperature is set to 40-60°C, the vacuum degree is -0.08 to -0.10 MPa, and dried for 18-24 hours to obtain the modified methacrylic resin.

[0007] Furthermore, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of (2.0-3.0):(0.5-1.0):(1.0-1.5).

[0008] Furthermore, the solvent consists of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of (3-5):(2-4):(1-3).

[0009] Furthermore, the monomer is one or a combination of 1,1-dimethylethyl 4-vinylphenyl carbonate, 4,4-biphenyldicarboxaldehyde, 4,4'-bis(hydroxymethyl)biphenyl, 3,4-hydroxystyrene, 1,3-dihydroxyadamantane, 1-methacryloyloxy-3-adamantanol, and 4-vinylphenol acetate.

[0010] Furthermore, the leveling agent is one or a combination of alkyl-modified organic siloxane, polyether-modified organic siloxane, phosphate acrylate, and phosphate methacrylate.

[0011] Furthermore, the viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of (2-5):(5-8).

[0012] Furthermore, the light stabilizer is one of 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, 2-(2′-hydroxy-3′,5′-di-tert-butylphenyl)benzotriazole, 2-(2′-hydroxy-3′-tert-butyl-5′-methylphenyl)-5-chlorobenzotriazole, 2-hydroxy-4-methoxybenzophenone, and 2-hydroxy-4-n-octyloxybenzophenone.

[0013] Furthermore, a process for preparing a photoresist composition comprises the following steps:

[0014] S1, adding the resin to the solvent, stirring and dissolving to obtain a resin solution;

[0015] S2. Add a photoinitiator, a light stabilizer, and a tackifier to the resin solution, stir and dissolve, and obtain a mixed solution I;

[0016] S3, adding monomer, acid diffusion inhibitor, and leveling agent to mixed solution I, stirring and dissolving to obtain mixed solution II;

[0017] S4. Filter the mixed solution II using a filter membrane with a pore size of ≤0.2 μm to obtain a photoresist composition.

[0018] Furthermore, in S1, the stirring speed is 200-500 rpm and the stirring time is 30-50 minutes; in S2, the stirring speed is 300-600 rpm and the stirring time is 20-30 minutes; and in S3, the stirring speed is 300-600 rpm and the stirring time is 20-30 minutes. The above S1, S2, S3, and S4 are carried out under the conditions of humidity of 50-60% and temperature of 20-25°C.

[0019] Compared with the prior art, the present invention has the following beneficial effects:

[0020] The present invention modifies methacrylic resin by introducing fluorine-containing groups, thereby changing the surface energy and polarity of the methacrylic resin, causing a significant change in the solubility of the resin after exposure, thereby making the photoresist easier to remove in the developer, thereby improving the clarity and resolution of the pattern.

[0021] The present invention slows down the diffusion rate of the acid by adding an acid diffusion inhibitor composed of a specific ratio of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate, making the boundary between the exposed area and the non-exposed area clearer and forming a steeper pattern edge, which helps to more accurately form the desired pattern during the development process, thereby improving the resolution of the photoresist.

[0022] The present invention incorporates a tackifier composed of L-proline methyl ester and hexamethyldisilazane in a specific ratio, which together improve the adhesion of the photoresist through different mechanisms. The amino and ester groups contained in the L-proline methyl ester can interact with active sites on the substrate surface, forming chemical bonds and physical adsorption, thereby improving the adhesion between the photoresist and the substrate. The organosilicon structure of the hexamethyldisilazane imparts excellent wettability and leveling properties, reducing the surface tension of the photoresist, making it easier to spread and evenly distribute the photoresist on the substrate. This helps increase the contact area between the photoresist and the substrate, thereby enhancing adhesion. It also reduces bubbles and defects in the photoresist layer, improving the quality of the photoresist. DETAILED DESCRIPTION

[0023] In order to better understand the technical content of the present invention, specific examples are provided below to further illustrate the present invention.

[0024] Unless otherwise specified, the experimental methods used in the examples of the present invention are all conventional methods.

[0025] Unless otherwise specified, the materials, reagents, etc. used in the examples of the present invention can be obtained from commercial sources.

[0026] Example 1

[0027] A photoresist composition comprises the following raw materials in parts by weight: 80.0 parts of a solvent, 20.0 parts of a resin, 3.0 parts of a photoinitiator, 1.0 parts of a light stabilizer, 1.5 parts of a tackifier, 1.0 parts of a monomer, 1.0 parts of an acid diffusion inhibitor, and 0.5 parts of a leveling agent. Among them, the solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 3:2:1, the resin is a modified methacrylic resin, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of 2.0:0.5:1.0, the light stabilizer is 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, the viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of 2:5, the monomer is 1,1-dimethylethyl 4-vinylphenyl carbonate, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a mass volume ratio of g / mL of 2:1:1, and the leveling agent is an alkyl-modified organic silicone.

[0028] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane and stirring to dissolve to obtain a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:4 g / mL. The methacrylic resin solution is dropwise added to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution. The reaction temperature is set at 60°C and the reaction is stirred for 30 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 8:4:0.4. After the reaction, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake. The filter cake is then washed twice with ethanol and placed in a vacuum drying oven at a drying temperature of 40°C and a vacuum of -0.08 MPa for 24 hours to obtain the modified methacrylic resin.

[0029] Example 2

[0030] A photoresist composition comprises the following raw materials in parts by weight: 100.0 parts of solvent, 40.0 parts of resin, 5.0 parts of photoinitiator, 3.0 parts of light stabilizer, 2.5 parts of tackifier, 1.5 parts of monomer, 2.0 parts of acid diffusion inhibitor, and 2.0 parts of leveling agent. Among them, the solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 5:4:3, the resin is a modified methacrylic resin, the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of 3.0:1.0:1.5, the light stabilizer is 2-(2'-hydroxy-3',5'-di-tert-butylphenyl)benzotriazole, the viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of 5:8, the monomer is composed of 3,4-hydroxystyrene and 4-vinylphenol acetate in a volume ratio of 1:1, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a mass volume ratio of g / mL of 3:2:2, and the leveling agent is composed of an alkyl-modified organic silicone and phosphate ester methacrylate in a volume ratio of 1:1.

[0031] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane and stirring to dissolve to obtain a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:6 g / mL. The methacrylic resin solution is dropwise added to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution. The reaction temperature is set at 80°C and the reaction is stirred for 20 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 12:6:0.6. After the reaction, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake. The filter cake is then washed three times with ethanol and placed in a vacuum drying oven at 60°C and a vacuum of -0.10 MPa for 18 hours to obtain the modified methacrylic resin.

[0032] Example 3

[0033] A photoresist composition comprises the following raw materials in parts by weight: 90.0 parts of solvent, 30.0 parts of resin, 4.0 parts of photoinitiator, 2.0 parts of light stabilizer, 2.0 parts of tackifier, 1.2 parts of monomer, 1.5 parts of acid diffusion inhibitor, and 1.3 parts of leveling agent. The solvent is composed of propylene glycol methyl ether acetate, propylene glycol methyl ether, and cyclohexanone in a volume ratio of 4:3:2; the resin is a modified methacrylic resin; the photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass volume ratio of g / mL of 2.5:0.8:1.2; the light stabilizer is 2-hydroxy-4-n-octyloxybenzophenone; the tackifier is composed of L-[4-(2-hydroxy-2-methylpropiophenone)] ... -proline methyl ester and hexamethyldisilazane, the monomer is composed of 4,4'-bis(hydroxymethyl)biphenyl and 1-methacryloyloxy-3-adamantanol in a mass ratio of 1:1, the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate in a mass volume ratio of g / mL of 2.5:1.5:1.5, and the leveling agent is composed of polyether-modified organic silicone and phosphate acrylate in a volume ratio of 1:1.

[0034] The modified methacrylic resin is prepared by the following method: adding methacrylic resin to cyclohexane and stirring to dissolve to obtain a methacrylic resin solution. The mass volume ratio of methacrylic resin to cyclohexane is 1:5 g / mL. The methacrylic resin solution is dropwise added to epifluoropropane, and triethylamine is added as a catalyst to obtain a reaction solution. The reaction temperature is set at 70°C and the reaction is stirred for 24 hours. The volume ratio of methacrylic resin solution, epifluoropropane, and triethylamine is 10:5:0.5. After the reaction, the reaction solution is cooled to room temperature and filtered using a Buchner funnel to obtain a filter cake. The filter cake is then washed three times with ethanol and placed in a vacuum drying oven at 50°C and a vacuum of -0.09 MPa for 20 hours to obtain the modified methacrylic resin.

[0035] The photoresist compositions in Examples 1-3 are prepared according to the following process, comprising the following steps:

[0036] S1. Add the resin to the solvent and stir at 350 rpm for 40 min to obtain a resin solution.

[0037] S2. Add a photoinitiator, a light stabilizer, and a tackifier to the resin solution, and stir at 450 rpm for 25 minutes to obtain a mixed solution I.

[0038] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, and stir at 450 rpm for 25 minutes to obtain mixed solution II.

[0039] S4, filter the mixed solution II using a filter membrane with a pore size of 0.1 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0040] The above steps S1, S2, S3 and S4 were carried out at a humidity of 55% and a temperature of 22°C.

[0041] Example 4

[0042] Compared with Example 3, this embodiment differs in that the photoresist composition is prepared according to the following process, including the following steps:

[0043] S1. Add the resin to the solvent and stir at 200 rpm for 50 min to obtain a resin solution.

[0044] S2. Add a photoinitiator, a light stabilizer, and a tackifier to the resin solution, and stir at 300 rpm for 30 minutes to obtain a mixed solution I.

[0045] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, and stir at 300 rpm for 30 minutes to obtain mixed solution II.

[0046] S4, filter the mixed solution II using a filter membrane with a pore size of 0.1 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0047] The above steps S1, S2, S3 and S4 are carried out at a humidity of 50% and a temperature of 20°C.

[0048] Example 5

[0049] Compared with Example 3, this embodiment differs in that the photoresist composition is prepared according to the following process, including the following steps:

[0050] S1. Add the resin to the solvent and stir at 500 rpm for 30 min to obtain a resin solution.

[0051] S2. Add a photoinitiator, a light stabilizer, and a tackifier to the resin solution, and stir at 600 rpm for 20 minutes to obtain a mixed solution I.

[0052] S3. Add monomer, acid diffusion inhibitor and leveling agent to mixed solution I, and stir at 600 rpm for 20 minutes to obtain mixed solution II.

[0053] S4, filter the mixed solution II using a filter membrane with a pore size of 0.2 μm to obtain a photoresist composition. The stirring speed in S3 is.

[0054] The above steps S1, S2, S3 and S4 were performed under the conditions of humidity of 60% and temperature of 25°C.

[0055] Comparative Example 1

[0056] This comparative example is compared with Example 3, except that methacrylic acid resin is used instead of modified methacrylic acid resin.

[0057] Comparative Example 2

[0058] Compared with Example 3, this comparative example differs in that the raw materials do not contain an acid diffusion inhibitor.

[0059] Comparative Example 3

[0060] This comparative example is compared with Example 3, except that the acid diffusion inhibitor is composed of perfluorocyclohexane and L-ethyl lactate in a volume ratio of g / mL of 2.5:1.5.

[0061] Comparative Example 4

[0062] The difference between this comparative example and Example 3 is that the raw materials do not contain a tackifier.

[0063] Comparative Example 5

[0064] The difference between this comparative example and Example 3 is that the adhesion promoter is a single-component hexamethyldisilazane.

[0065] 1. Resolution test

[0066] The photoresist compositions prepared in Examples 1-5 and Comparative Examples 1-3 were spin-coated onto a silicon wafer at 2000 rpm and baked at 100°C for 60 seconds to obtain a photoresist layer. A standard L / S=1:1 detection mask was used, and the obtained photoresist layer was exposed using a light source with a wavelength of 365 nm. A tetramethylammonium hydroxide solution with a mass fraction of 2.38 w% was used as a developer to develop the exposed photoresist layer for 60 seconds. A scanning electron microscope was used to observe the resolution of the developed photoresist pattern. The minimum line width was measured and recorded. The line width was the resolution of the photoresist. Each Example and Comparative Example was tested 5 times, and the average value was taken. The results are shown in Table 1.

[0067] Table 1

[0068]

[0069] As can be seen from Table 1, the photoresist compositions prepared in Examples 1 to 5 of the present invention have relatively high resolutions, among which Example 3 has the highest resolution.

[0070] Compared with comparative example 1 through embodiment 3, embodiment 3 is by methacrylic resin being modified, introduced fluorine-containing group, thereby changed the surface energy and polarity of methacrylic resin, made the solubility of resin after exposure significantly change, thereby made photoresist be more easily removed in developer, thereby improved the sharpness and resolution of pattern.And the reaction of epoxyfluoropropane and methacrylic resin forms more cross-linking points, increases the cross-linking density of resin, thereby reduces the lateral etching phenomenon in the developing process, improves the fidelity and resolution of pattern.In addition, fluorine-containing group has stronger electron-withdrawing ability, can stabilize free radical, reduces the compound probability between free radical.In the exposure process of photoresist, light trigger produces free radical after absorbing photon, and these free radicals then cause the decomposition reaction of resin.The existence of fluorine-containing group can strengthen the stability of free radical, makes free radical can exist and participate in the decomposition reaction of resin for a long time, thereby improves reaction efficiency.Owing to all containing fluorine-containing group in modified methacrylic resin and acid diffusion inhibitor, the compatibility between them has been significantly enhanced. This enhanced compatibility allows for more uniform dissolution and dispersion of the acid diffusion inhibitor in the resin, reduces phase separation and aggregation, more effectively controls acid diffusion, and creates steeper edges in the exposed area, resulting in more stable performance in the photoresist during exposure and development, and improved pattern resolution and clarity.

[0071] By comparing Example 3 with Comparative Example 2, Example 3 slows down the diffusion rate of the acid by adding an acid diffusion inhibitor composed of a specific ratio of perfluorocyclohexane, benzo-15-crown ether-5, and L-ethyl lactate, so that the boundary between the exposed area and the non-exposed area is clearer, forming a steeper pattern edge, and helping to more accurately form the required pattern in the development process, thereby improving the resolution of the photoresist. The perfluorocyclohexane is enriched on the resin surface to form a physical barrier. This barrier can slow down the diffusion rate of the acid molecules from the exposed area to the non-exposed area, thereby making the edge of the exposed area steeper. The benzo-15-crown ether-5 has a cavity inside, which can accommodate and form a complex compound based on the electrostatic attraction and hydrogen bonding between the oxygen atoms on the crown ether ring and the hydrogen ions in the acid molecules. The formation of the complex compound reduces the free mobility of the acid molecules because the acid molecules are "fixed" in the cavity of the crown ether ring and are difficult to freely diffuse in the resin, thereby effectively slowing down the diffusion rate of the acid. In addition, the formation of complex compound also helps to reduce the direct contact of acid molecules with resin, further reducing the influence of acid diffusion on resin. The hydroxyl group and ester group in the L-ethyl lactate molecule can form hydrogen bonds with the acid molecules, so that the acid molecules are "bound" around the L-ethyl lactate molecule, thereby slowing down the free mobility of the acid and reducing its diffusion rate in the resin. The chiral structure of L-ethyl lactate makes it have certain steric hindrance in space. When it interacts with the acid molecules, this steric hindrance can hinder the further diffusion of the acid molecules in the resin. The steric hindrance effect combines with the hydrogen bond effect to jointly slow down the diffusion rate of the acid. Through the combined action of the different mechanisms of perfluorocyclohexane, benzo-15-crown ether-5 and L-ethyl lactate, the diffusion rate of the acid is slowed down, making the boundary between the exposed area and the non-exposed area clearer, thereby improving the resolution of the photoresist. Compared with Comparative Example 3 through Example 3, the effect of the acid diffusion inhibition lacking benzo-15-crown ether-5 has been weakened to a great extent. It can be seen that the inclusion and complexation of acid molecules by benzo-15-crown-5 can effectively slow down the diffusion rate of the acid, thereby improving the resolution of the photoresist.

[0072] 2. Adhesion performance test

[0073] The photoresist compositions prepared in Examples 1-5 and Comparative Examples 4-5 were spin-coated onto a silicon wafer at 2000 rpm and baked at 100°C for 60 seconds to form a photoresist layer. A standard L / S ratio of 1:1 was used to inspect the photoresist layer, and a light source with a wavelength of 365 nm was used to expose the resulting photoresist layer. A 2.38 w% tetramethylammonium hydroxide solution was used as a developer for 60 seconds. The exposed photoresist layer was then cured at 100°C in a nitrogen atmosphere for 60 minutes. The cured photoresist layer was cut into 100 equal-sized squares, and adhesive tape was evenly applied to the 100 squares of the photoresist layer. The tape was then peeled from the photoresist layer at a steady and uniform speed. After peeling, the remaining photoresist squares on the substrate were carefully observed and the number of remaining squares was counted. The number of remaining squares was used to evaluate the adhesive properties of the photoresist. A number of 90-100 squares remaining was considered excellent, 75-89 was considered good, 60-74 was considered acceptable, and 60 or fewer was considered unacceptable. The test was repeated three times, and the average number of squares remaining was used for evaluation. The results are shown in Table 2.

[0074] Table 2

[0075] Example 1 Example 2 Example 3 Example 4 Example 5 Comparative Example 4 Comparative Example 5 Adhesion performance excellent excellent excellent excellent excellent qualified good

[0076] As can be seen from Table 2, the photoresist compositions prepared in Examples 1-5 of the present invention have excellent adhesion properties. The present invention adds a tackifier composed of L-proline methyl ester and hexamethyldisilazane in a specific ratio, which together improve the adhesion properties of the photoresist through different mechanisms. The amino and ester groups contained in the L-proline methyl ester can interact with the active sites on the substrate surface, forming chemical bonds and physical adsorption, thereby improving the adhesion properties between the photoresist and the substrate. In addition, the amphiphilic nature of the L-proline methyl ester enables it to form an ordered arrangement at the interface, helping to reduce the surface tension between the photoresist and the substrate, making it easier for the photoresist to spread on the substrate surface, further enhancing the adhesion properties. The organosilicon structure of the hexamethyldisilazane gives it excellent wettability and leveling properties, which can reduce the surface tension of the photoresist, making it easier for the photoresist to spread and be evenly distributed on the substrate, helping to increase the contact area between the photoresist and the substrate, enhancing the adhesion properties, and also reducing bubbles and defects in the photoresist layer, improving the quality of the photoresist.

[0077] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the scope of protection of the present invention.

Claims

1. A photoresist composition, characterized in that The invention comprises the following raw materials in parts by weight: 80.0-100.0 parts of solvent, 20.0-40.0 parts of resin, 3.0-5.0 parts of photoinitiator, 1.0-3.0 parts of light stabilizer, 1.5-2.5 parts of tackifier, 1.0-1.5 parts of monomer, 1.0-2.0 parts of acid diffusion inhibitor, and 0.5-2.0 parts of leveling agent, wherein the acid diffusion inhibitor is composed of perfluorocyclohexane, benzo-15-crown-5, and L-ethyl lactate in a mass-to-volume ratio of (2-3):(1-2):(1-2), wherein the mass unit is g and the volume unit is mL; The resin is a modified methacrylic resin, which is prepared by the following method: adding methacrylic resin to cyclohexane, stirring and dissolving, to obtain a methacrylic resin solution, wherein the mass volume ratio of the methacrylic resin to the cyclohexane is 1:(4-6), where the mass unit is g and the volume unit is mL; adding the methacrylic resin solution dropwise to epifluoropropane, and then adding triethylamine as a catalyst to obtain a reaction solution, setting the reaction temperature to 60-80° C., stirring and reacting for 20-30 hours, wherein the volume ratio of the methacrylic resin solution, epifluoropropane, and triethylamine is (8-12):(4-6):(0.4-0.6); after the reaction is completed, cooling the reaction solution to room temperature and filtering it using a Buchner funnel to obtain a filter cake; The filter cake is washed with ethanol 2-3 times, and the washed filter cake is placed in a vacuum drying oven at a drying temperature of 40-60°C and a vacuum degree of -0.08 to -0.10 MPa for 18-24 hours to obtain a modified methacrylic acid resin. The photoinitiator is composed of a rare earth ion complex, 2-hydroxy-2-methylpropiophenone, and triphenylsulfonium hexafluoroantimonate in a mass-to-volume ratio of (2.0-3.0):(0.5-1.0):(1.0-1.5), wherein the mass unit is g and the volume unit is mL; The viscosity enhancer is composed of L-proline methyl ester and hexamethyldisilazane in a volume ratio of (2-5):(5-8); The monomer is one or a combination of 1,1-dimethylethyl 4-vinylphenyl carbonate, 4,4-biphenyldicarboxaldehyde, 4,4'-bis(hydroxymethyl)biphenyl, 3,4-hydroxystyrene, 1,3-dihydroxyadamantane, 1-methacryloyloxy-3-adamantane alcohol, and 4-vinylphenol acetate.

2. A photoresist composition according to claim 1, characterized in that The solvent consists of propylene glycol methyl ether acetate, propylene glycol methyl ether and cyclohexanone in a volume ratio of (3-5):(2-4):(1-3).

3. A photoresist composition according to claim 1, characterized in that The leveling agent is one or a combination of alkyl-modified organic siloxane, polyether-modified organic siloxane, phosphate acrylate, and phosphate methacrylate.

4. A photoresist composition according to claim 1, characterized in that The light stabilizer is one of 2,4,6-tris(2-hydroxy-4-n-butoxyphenyl)-1,3,5-triazine, 2-(2′-hydroxy-3′,5′-di-tert-butylphenyl)benzotriazole, 2-(2′-hydroxy-3′-tert-butyl-5′-methylphenyl)-5-chlorobenzotriazole, 2-hydroxy-4-methoxybenzophenone, and 2-hydroxy-4-n-octyloxybenzophenone.

5. The process for preparing a photoresist composition according to claim 1, wherein: The following steps are involved: S1, adding the resin to the solvent, stirring and dissolving to obtain a resin solution; S2. Add a photoinitiator, a light stabilizer, and a tackifier to the resin solution, stir and dissolve, and obtain a mixed solution I; S3, adding monomer, acid diffusion inhibitor, and leveling agent to mixed solution I, stirring and dissolving to obtain mixed solution II; S4. Filter the mixed solution II using a filter membrane with a pore size of ≤0.2 μm to obtain a photoresist composition.

6. The process for preparing a photoresist composition according to claim 5, wherein: In the S1, the stirring speed is 200-500 rpm and the stirring time is 30-50 min; in the S2, the stirring speed is 300-600 rpm and the stirring time is 20-30 min; in the S3, the stirring speed is 300-600 rpm and the stirring time is 20-30 min. The S1, S2, S3 and S4 are carried out under the conditions of humidity of 50-60% and temperature of 20-25°C.

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