A method for non-destructive transfer of a two-dimensional material to a flexible substrate

Abstract

The application discloses a method for nondestructive transfer of two-dimensional materials to a flexible substrate, comprising the following steps: step one, growing two-dimensional TMDCs materials on a rigid SiO2 / Si substrate; step two, forming a uniform water film on the surface of the flexible substrate to be transferred, and combining with the two-dimensional TMDCs materials on the rigid SiO2 / Si substrate; step three, synchronously separating the flexible substrate carrying the water film and the two-dimensional TMDCs materials from the rigid SiO2 / Si substrate along the vertical direction of the surface, and drying, and the operation is completed. The transfer method is suitable for different types of flexible substrates and can transfer various types of two-dimensional materials. The method is simple in operation, high in efficiency and fast in speed, and the transferred material has the characteristics of high crystalline quality, complete structure and clean surface, and is beneficial to further carry out physical property research of the flexible two-dimensional material and subsequent preparation of flexible electronic devices based on the two-dimensional material.

Description

Technical Field

[0001] This invention belongs to the field of two-dimensional semiconductor materials and relates to a method for non-destructive transfer of two-dimensional materials to a flexible substrate. Background Technology

[0002] Flexible sensors are one of the fundamental components of next-generation strategic and forward-looking flexible information devices. High-quality flexible electronic materials are the core of high-performance flexible sensors. Two-dimensional transition metal chalcogenides (TMDCs), with their flexibility, tunable bandgap, and high mobility, have become a research focus in the field of flexible electronic devices, bringing new hope for the development of flexible electronics. However, flexible electronic devices typically require large-area and high-quality materials, and the complex manufacturing and integration processes limit the practical application of two-dimensional TMDCs.

[0003] For flexible electronic devices, the most challenging technological barrier is the direct fabrication of two-dimensional modular digital control (TMDC) materials on flexible substrates. Chemical vapor deposition (CVD) synthesis of TMDCs requires high temperatures. While the use of molten salts has effectively lowered the fabrication temperature to 550-850℃, it still cannot meet the requirements for direct growth of TMDCs on flexible substrates. Currently, SiO2 / Si is the most commonly used substrate for CVD fabrication of TMDCs. How to transfer these TMDCs materials non-destructively onto suitable target flexible substrates is crucial for further research on the properties of flexible 2D materials and the subsequent fabrication of flexible electronic devices based on 2D materials. Existing dry and wet transfer techniques for 2D TMDCs all result in varying degrees of contamination and damage to the materials during the transfer process, increasing defects and significantly impacting device performance. CN104960286A discloses a controllable flexible transfer method for two-dimensional materials. This method can precisely transfer two-dimensional materials to a target location on a target substrate without damaging the original structure and properties of the substrate. However, it uses organic solvents during the operation, which may cause some degree of contamination or damage to the two-dimensional materials. CN109133174A discloses a two-dimensional material transfer method, two-dimensional materials, and their applications. The two-dimensional materials obtained by this method have good integrity, and the reagents used are environmentally friendly and pollution-free. However, this method requires heating and pressurization during the transfer process and is not suitable for flexible substrates. Therefore, there is an urgent need in the field for an environmentally friendly and pollution-free two-dimensional material transfer method that can transfer nanoscale two-dimensional materials completely and without damage from a growth substrate to a flexible substrate. This would provide important support for further research on the properties of flexible two-dimensional materials and the subsequent fabrication of flexible electronic devices based on two-dimensional materials. Summary of the Invention

[0004] To address the various problems associated with traditional transfer methods, this invention aims to provide a method for non-destructive transfer of two-dimensional materials to flexible substrates, effectively avoiding the contamination and damage issues inherent in traditional methods. This method not only achieves high-quality transfer but also ensures that the original properties of the material are not compromised, providing an ideal technical means for further research on the properties of flexible two-dimensional materials and the subsequent fabrication of flexible electronic devices based on these materials.

[0005] To achieve the above objectives, the technical solution adopted by the present invention includes:

[0006] A method for non-destructive transfer of two-dimensional materials to a flexible substrate includes the following steps:

[0007] Step 1: Growing two-dimensional TMDCs material on a rigid SiO2 / Si substrate;

[0008] Step 2: A uniform water film is formed on the transfer surface of the flexible substrate and bonded to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate;

[0009] Step 3: Separate the flexible substrate carrying the water film and two-dimensional TMDCs material from the rigid SiO2 / Si substrate simultaneously in a direction perpendicular to the surface, and then dry them.

[0010] Optionally, the water film is formed by spraying, with the nozzle having an orifice diameter of 0.5 to 0.8 mm and a flow rate of 0.1 to 0.5 L / min. During spraying, the nozzle is kept 10 to 20 cm away from the surface of the flexible substrate.

[0011] Optionally, the water film is formed by spraying, with a nozzle orifice diameter of 0.5 mm and a flow rate of 0.1 L / min. During spraying, the nozzle is kept 15 cm away from the surface of the flexible substrate.

[0012] Optionally, the water droplet size of the water film is 10–40 μm.

[0013] Optionally, plasma treatment is performed before forming a water film on the surface to be transferred on the flexible substrate; the plasma treatment conditions include a power of 20-100W, a time of 30-300 seconds, a gas type of air or oxygen, and a gas pressure of 10-1000Pa.

[0014] Optionally, the plasma treatment conditions include a power of 40W, a time of 60 seconds, an oxygen gas type, and a pressure of 100Pa.

[0015] Optionally, the drying temperature is 15–30°C and the drying time is 3–5 min.

[0016] Optionally, the drying temperature is 25°C and the drying time is 4 minutes.

[0017] Optionally, the area of ​​the flexible substrate to be transferred is larger than the area of ​​the growth surface of the SiO2 / Si substrate; the material used to prepare the flexible substrate is selected from at least one of polydimethylsiloxane, polyimide, polyethylene terephthalate, polyethylene, polyethylene naphthalate, metal foil, polymethyl methacrylate and polycarbonate.

[0018] Optionally, the oxide layer thickness of the rigid SiO2 / Si substrate is 285 nm; the two-dimensional TMDCs material is prepared by chemical vapor deposition on the SiO2 / Si substrate.

[0019] Compared with existing technologies, the present invention has the following beneficial effects:

[0020] 1. This non-destructive transfer method for two-dimensional materials has excellent versatility, applicable to transferring two-dimensional materials to different types of flexible substrates. Whether it is a polymer film, metal foil, or other types of flexible substrate, this method can effectively and completely transfer two-dimensional materials onto the target substrate without causing material contamination or damage. This makes it possible to directly fabricate high-performance flexible devices on different types of flexible substrates, greatly expanding the application of two-dimensional materials in the field of flexible devices.

[0021] 2. This invention involves spraying a water film onto the surface of a flexible substrate and then bonding the water-film-coated flexible substrate film to the surface of a two-dimensional material sample. During the separation of the two-dimensional material from the growth substrate, the water film forms a buffer layer between the flexible substrate and the two-dimensional material sample, reducing direct contact and excessive adhesion between them. This allows for smoother peeling of the two-dimensional material from the growth substrate while maintaining sample integrity, preventing tearing or cracking due to excessive adhesion. Furthermore, during the bonding process, the water film evenly distributes pressure between the flexible substrate and the two-dimensional material sample, avoiding localized stress concentration. This helps protect the sample from uneven stress, further reducing the risk of cracking or deformation.

[0022] 3. This invention utilizes deionized water as an intermediary, which not only avoids the contamination problems caused by traditional transfer methods that use chemical substances such as PMMA, organic solvents, glues, or adhesives as transfer carriers, but also forms an ultra-clean interface, maintaining the high surface quality of the material and ensuring that the electronic properties of the two-dimensional material are not affected in subsequent applications. The entire transfer process is gentle and does not involve high temperatures or chemical treatments, ensuring that the original structure and physicochemical properties of the two-dimensional material are not damaged, making it suitable for further research on the intrinsic properties of the material. Attached Figure Description

[0023] The accompanying drawings are provided to further illustrate the present disclosure and form part of the specification. They are used together with the following detailed description to explain the present disclosure, but do not constitute a limitation thereof. In the drawings:

[0024] Figure 1 A schematic diagram of the transfer process of two-dimensional materials;

[0025] Figure 2 Optical images of MoS2 before transfer in Example 1;

[0026] Figure 3 Optical images of MoS2 transferred using PDMS in Example 1;

[0027] Figure 4 Optical images of MoS2 before transfer in Example 2;

[0028] Figure 5 Optical images of MoS2 after PI transfer in Example 2;

[0029] Figure 6 Optical images of MoS2 before transfer in Example 3;

[0030] Figure 7 Optical images of MoS2 transferred using PET in Example 3;

[0031] Figure 8 Optical images of MoS2 before transfer in Example 4;

[0032] Figure 9 Optical images of MoS2 transferred using PE in Example 4;

[0033] Figure 10 Comparative Example 1: Optical image of MoS2 before transfer;

[0034] Figure 11 Comparative Example 1: Optical image of MoS2 after transfer using PDMS;

[0035] Figure 12 Comparative Example 2: Optical image of MoS2 before transfer;

[0036] Figure 13 Comparative Example 2: Optical images of MoS2 transferred using PDMS;

[0037] The present invention will be described in detail below with reference to the accompanying drawings and specific embodiments. Detailed Implementation

[0038] The present invention will be further described below with reference to the accompanying drawings and specific embodiments. It should be understood that these embodiments are for illustrative purposes only and are not intended to limit the scope of the invention. Furthermore, it should be understood that after reading the teachings of this invention, those skilled in the art can make various alterations or modifications to the invention, and these equivalent forms also fall within the scope defined by the appended claims.

[0039] This invention discloses a non-destructive transfer method for two-dimensional TMDCs based on a flexible substrate, comprising the following steps: Step 1: Growing two-dimensional TMDCs material on a rigid SiO2 / Si substrate; Step 2: Forming a uniform water film on the transfer surface of the flexible substrate, which then adheres to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate; Step 3: Simultaneously separating the flexible substrate carrying the water film and the two-dimensional TMDCs material from the rigid SiO2 / Si substrate along a direction perpendicular to the surface, followed by drying, thereby non-destructively transferring the two-dimensional TMDCs to the flexible substrate. This invention utilizes deionized water as an intermediary, avoiding the contamination problems caused by using chemical substances such as PMMA, organic solvents, glues, or adhesives as transfer carriers in traditional transfer methods. It also forms an ultra-clean interface, maintaining high surface quality of the material and ensuring that the electronic properties of the two-dimensional material are not affected in subsequent applications. The entire transfer process is gentle and does not involve high temperatures or chemical treatments, ensuring that the original structure and physicochemical properties of the two-dimensional material are not damaged. In this invention, simultaneous separation along a direction perpendicular to the surface refers to simultaneously separating the flexible substrate and the rigid substrate along a direction perpendicular to the substrate surface. Because of the water film between the two, the adhesion between them is relatively weak, ensuring easy separation of the flexible substrate. The flexible substrate film typically has protective films on both sides. During transfer, only one side of the protective film is peeled off, leaving the other side intact to maintain the material's support strength; alternatively, a harder material is attached to the surface of the flexible substrate to enhance its rigidity. During separation, the center of the film can be held with tools such as tweezers and lifted vertically. A 285nm oxide layer thickness on the rigid SiO2 / Si substrate refers to the use of a 285nm thick silicon wafer as the substrate for CVD growth. Specifically, this invention grows two-dimensional TMDCs on a SiO2 / Si substrate using CVD, then cuts the flexible substrate film to a size slightly larger than the two-dimensional TMDC sample to be transferred, and performs plasma treatment. Deionized water is uniformly sprayed onto the surface of the treated flexible substrate film to form a thin, uniform water film. The flexible substrate film with the water film is then attached to the target two-dimensional TMDC sample, and the film is quickly lifted vertically, achieving a non-destructive transfer of the two-dimensional TMDCs from the original substrate to the flexible substrate. The water film acts as an isolation and buffer during the transfer process, effectively reducing direct adhesion between the flexible substrate and the sample or substrate. This transfer method is applicable not only to different types of flexible substrates but also to various types of two-dimensional materials. It is simple to operate, highly efficient, and fast. The transferred materials exhibit high crystallinity, intact structure, and clean surface, which is beneficial for further research on the properties of flexible two-dimensional materials and the subsequent fabrication of flexible electronic devices based on two-dimensional materials.

[0040] In this disclosure, the water film is formed by spraying, with a nozzle orifice diameter of 0.5–0.8 mm and a flow rate of 0.1–0.5 L / min. During spraying, the nozzle is maintained at a distance of 10–20 cm from the surface of the flexible substrate. Preferably, the water film is formed by spraying, with a nozzle orifice diameter of 0.5 mm and a flow rate of 0.1 L / min. During spraying, the nozzle is maintained at a distance of 15 cm from the surface of the flexible substrate.

[0041] In this disclosure, the water droplet size of the water film is 10–40 μm.

[0042] In this disclosure, plasma treatment is performed before forming a water film on the surface to be transferred on the flexible substrate; the plasma treatment conditions include a power of 20-100W, a time of 30-300 seconds, a gas type of air or oxygen, and a gas pressure of 10-1000Pa. Preferably, the plasma treatment conditions include a power of 40W, a time of 60 seconds, a gas type of oxygen, and a gas pressure of 100Pa.

[0043] In this disclosure, the drying temperature is 15–30°C, and the drying time is 3–5 min. Preferably, the drying temperature is 25°C, and the drying time is 4 min.

[0044] In this disclosure, the area of ​​the flexible substrate to be transferred is larger than the area of ​​the growth surface of the SiO2 / Si substrate; the material for preparing the flexible substrate is selected from at least one of polydimethylsiloxane (PDMS), polyimide (PI), polyethylene terephthalate (PET), polyethylene (PE), polyethylene naphthalate (PEN), metal foil, polymethyl methacrylate (PMMA), and polycarbonate (PC).

[0045] In this disclosure, the oxide layer thickness of the rigid SiO2 / Si substrate is 285 nm; the two-dimensional TMDCs material is prepared by chemical vapor deposition on the SiO2 / Si substrate.

[0046] The technical solution of the present invention will be described in detail below with reference to specific embodiments and comparative examples. Unless otherwise specified, the raw materials used are commercially available and the methods used are conventional experimental methods in the art.

[0047] Example 1:

[0048] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0049] (2) Cut the 300 μm thick PDMS film into a size slightly larger than the two-dimensional TMDCs sample size, ensuring that at least 0.5 mm of margin is reserved on each side. Treat the PDMS film with a plasma treatment device under the following conditions: power 40 W, time 60 seconds, gas type oxygen, and pressure 100 Pa.

[0050] (3) Use a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to spray deionized water evenly onto the surface of the treated flexible substrate film to form a uniform thin water film. When spraying, keep the nozzle 15 cm away from the PDMS film surface.

[0051] (4) The PDMS film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically and dried at 25°C for 4 min. The two-dimensional material MoS2 can be transferred to the PDMS film without damage.

[0052] Figure 3 and Figure 2 The comparison clearly shows that MoS2 remains intact without cracks or wrinkles after being transferred to the PDMS substrate, and has a high surface cleanliness. This proves the high applicability of this transfer method on PDMS substrates, which is beneficial for the subsequent fabrication of high-performance flexible electronic devices based on PDMS substrates.

[0053] Example 2:

[0054] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0055] (2) Cut the 75μm thick PI film into a size slightly larger than the two-dimensional TMDCs sample size, ensuring that at least 0.5mm of margin is reserved on each side. Treat the PI film with a plasma treatment device under the following conditions: power 40W, time 60 seconds, gas type oxygen, and pressure 100Pa.

[0056] (3) Use a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to spray deionized water evenly onto the surface of the treated flexible substrate film to form a uniform thin water film. When spraying, keep the nozzle 15 cm away from the PI film surface.

[0057] (4) The PI film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PI film is lifted vertically and dried at 25°C for 4 min. The two-dimensional material MoS2 can be transferred to the PI film without damage.

[0058] Figure 5 and Figure 4 The comparison clearly shows that the MoS2 transferred to the PI substrate retains its structural integrity and clean surface. This indicates that the transfer method is also applicable to PI substrates, effectively maintaining the integrity and cleanliness of the material and ensuring that the quality of the two-dimensional material is not affected during the transfer process. This result also demonstrates the great potential of this transfer technology in fabricating high-quality, PI-based flexible electronic devices.

[0059] Example 3:

[0060] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0061] (2) Cut a 200 μm thick PET film into a size slightly larger than the two-dimensional TMDCs sample size, ensuring that at least 0.5 mm of allowance is reserved on each side. Treat the PET film with a plasma treatment device under the following conditions: power 40 W, time 60 seconds, gas type oxygen, and pressure 100 Pa.

[0062] (3) Use a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to spray deionized water evenly onto the surface of the treated flexible substrate film to form a uniform thin water film. When spraying, keep the nozzle 15 cm away from the PET film surface.

[0063] (4) The PET film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PET film is lifted vertically and dried at 25°C for 4 min to transfer the two-dimensional material MoS2 to the PET film without damage.

[0064] Figure 6 and Figure 7 The comparison clearly shows that the MoS2 transferred to the PET substrate maintained structural integrity and surface cleanliness. This indicates that the transfer method is also applicable to PET substrates. However, PET, as a flexible substrate, may inherently have minor surface irregularities. When bonding MoS2, these minor surface bumps may cause slight wrinkles in the two-dimensional material.

[0065] Example 4:

[0066] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0067] (2) Cut the PE film with a thickness of 30 μm into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that a margin of at least 0.5 mm is reserved on each side. Treat the PE film with a plasma treatment device under the following conditions: power 40 W, time 60 seconds, gas type oxygen, and pressure 100 Pa.

[0068] (3) Use a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to spray deionized water evenly onto the surface of the treated flexible substrate film to form a uniform thin water film. When spraying, keep the nozzle 15 cm away from the PE film surface.

[0069] (4) The PE film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PE film is lifted vertically and dried at 25°C for 4 min to transfer the two-dimensional material MoS2 to the PE film without damage.

[0070] Figure 9 and Figure 8 The comparison clearly shows that the MoS2 transferred to the PE substrate exhibited structural integrity and surface cleanliness. This indicates that the transfer method is also applicable to PE substrates, and that the water film played a buffering role during the transfer process, preventing the formation of material cracks. However, due to the relatively thin PE film used, the support for MoS2 was insufficient, resulting in wrinkles on the material surface.

[0071] Comparative Example 1:

[0072] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0073] (2) Cut the PDMS film with a thickness of 300 μm into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of allowance is reserved on each side.

[0074] (3) The PDMS film is attached to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically to transfer the two-dimensional material MoS2 to the PDMS film.

[0075] Figure 11 This demonstrates the effect of directly transferring MoS2 onto PDMS using PMMA without the aid of a water film. Figure 11 and Figure 10 The comparison reveals obvious cracks and even large-area damage on the surface of the transferred MoS2, severely compromising the material's integrity. This is because the ultrathin layered structure of two-dimensional materials is extremely fragile; even slight uneven external forces can cause breakage. During the transfer process, the adhesion and tearing between PDMS and MoS2 lead to localized stress concentration, which may induce crack and wrinkle formation in certain areas of the material. Furthermore, Figure 11 and Figure 3 The comparison shows that the water-film-assisted transfer method reduces direct contact and excessive adhesion between PDMS and MoS2, avoiding tearing, cracking, or wrinkling of the material. Furthermore, during the bonding process, the water film helps to evenly distribute pressure and prevents the concentration of localized mechanical stress, thus allowing the transferred two-dimensional material to maintain its structural integrity.

[0076] Comparative Example 2:

[0077] (1) Two-dimensional material MoS2 was grown on a 285nm SiO2 / Si substrate by CVD;

[0078] (2) Cut the PDMS film with a thickness of 300 μm into a size slightly larger than the size of the two-dimensional TMDCs sample, ensuring that at least 0.5 mm of allowance is reserved on each side.

[0079] (3) Use a nozzle with an aperture of 0.5 mm and a flow rate of 0.1 L / min to spray deionized water evenly onto the surface of the treated flexible substrate film to form a uniform thin water film. When spraying, keep the nozzle 15 cm away from the PDMS film surface.

[0080] (4) The PDMS film with water film is attached to the surface of the two-dimensional TMDCs sample, and then the PDMS film is lifted vertically and dried at 25°C for 4 min to transfer the two-dimensional material MoS2 to the PDMS film.

[0081] Figure 13 The effect of directly spraying deionized water onto the surface of PMMA to transfer MoS2 onto PDMS without plasma treatment was demonstrated. Figure 13 and Figure 12 The comparison reveals severe agglomeration of MoS2 after transfer, with some even exhibiting wrinkles. This damages the material and prevents in-situ transfer. The reason lies in the hydrophobic nature of the untreated PDMS surface, which makes it difficult for deionized water to spread, resulting in large droplets. In this situation, gaps or incomplete coverage occur during material transfer. Furthermore, the material within the droplets tends to agglomerate, and wrinkles may form during droplet drying, ultimately leading to unsatisfactory transfer results.

[0082] In summary, the method for non-destructive transfer of two-dimensional materials to flexible substrates provided by this invention effectively reduces problems such as cracks, breakage, and surface uncleanliness on the surface of the transferred two-dimensional materials. This method not only achieves efficient and rapid transfer but also ensures that the transferred two-dimensional material retains its original high crystallinity, intact structure, and clean surface. Because the integrity of the material is well preserved during the transfer process, this method provides a reliable and efficient solution for transferring two-dimensional materials to flexible substrates. Combining these advantages, this method provides a solid foundation and broad application prospects for further research on the properties of flexible two-dimensional materials and the subsequent fabrication of flexible electronic devices based on two-dimensional materials.

[0083] The above are merely specific embodiments of this application and are not intended to limit this application. Various modifications and variations can be made to this application by those skilled in the art. Any modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the protection scope of this application.

Claims

1. A method for non-destructive transfer of two-dimensional materials to a flexible substrate, characterized in that, Includes the following steps: Step 1: Growing two-dimensional TMDCs material on a rigid SiO2 / Si substrate; Step 2: A uniform water film is formed on the transfer surface of the flexible substrate and bonded to the two-dimensional TMDCs material on the rigid SiO2 / Si substrate; Before forming a water film on the surface to be transferred on the flexible substrate, plasma treatment is performed; the plasma treatment conditions include a power of 20-100 W, a time of 30-300 seconds, a gas type of air or oxygen, and a gas pressure of 10-1000 Pa. The water film is formed by spraying. The nozzle has an orifice diameter of 0.5–0.8 mm and a flow rate of 0.1–0.5 L / min. During spraying, the nozzle is kept 10–20 cm away from the surface of the flexible substrate. The water droplets in the water film have a particle size of 10–40 μm. Step 3: Separate the flexible substrate carrying the water film and two-dimensional TMDCs material from the rigid SiO2 / Si substrate simultaneously in a direction perpendicular to the surface, and then dry them.

2. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1, characterized in that, The water film is formed by spraying. The nozzle has an orifice diameter of 0.5 mm and a flow rate of 0.1 L / min. During spraying, the nozzle is kept 15 cm away from the surface of the flexible substrate.

3. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1 or 2, characterized in that, The plasma processing conditions include a power of 40 W, a time of 60 seconds, an oxygen gas type, and a pressure of 100 Pa.

4. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1 or 2, characterized in that, The drying temperature is 15–30°C, and the drying time is 3–5 minutes.

5. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1 or 2, characterized in that, The drying temperature was 25°C and the drying time was 4 minutes.

6. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1 or 2, characterized in that, The area of ​​the flexible substrate to be transferred is larger than the area of ​​the growth surface of the SiO2 / Si substrate; The flexible substrate is made of at least one of polydimethylsiloxane, polyimide, polyethylene terephthalate, polyethylene, polyethylene naphthalate, metal foil, polymethyl methacrylate, and polycarbonate.

7. The method for non-destructive transfer of two-dimensional materials to a flexible substrate according to claim 1 or 2, characterized in that, The oxide layer thickness of the rigid SiO2 / Si substrate is 285 nm; The two-dimensional TMDCs material was prepared by chemical vapor deposition on a SiO2 / Si substrate.

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