Parameter determination method, related device and preparation method of field limiting ring terminal

Abstract

The present application discloses a method for determining parameters of a field limiting ring terminal, related devices, and a preparation method. The method includes: obtaining model parameters of physical models of a plurality of field limiting ring structures, where the field limiting ring structure includes an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different; determining original parameter information according to the plurality of model parameters and the designed breakdown voltage value of the main junction, where the field limiting ring terminal includes a main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information includes the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings; performing simulation calculations on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the main junction, and adjusting the original parameter information when the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements. The present application solves the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the breakdown voltage requirements.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular, to a method for determining parameters of a field limiting ring terminal, a preparation method, a parameter determination device, a computer-readable storage medium, and an electronic device. Background Art

[0002] As a key switching device for controlling strong electricity with weak electricity, power semiconductors have broad application prospects in modern power systems, transportation, aerospace and other fields. However, due to the influence of the surface curvature radius of the semiconductor PN junction, the surface electric field of the PN junction is much larger than the maximum electric field in the body, making the device prone to breakdown on the surface under high voltage. Therefore, high-voltage power devices usually need to be provided with a terminal protection structure to reduce the maximum surface electric field, so that the device breaks down in the body as much as possible, and the actual breakdown voltage reaches the ideal value of the breakdown voltage in the body as much as possible, thereby improving the voltage withstand characteristics of the device.

[0003] At present, the terminal structures of traditional semiconductors usually adopt some special structures to reduce the surface electric field and improve the terminal voltage withstand. Due to its simple process manufacturing, stable process and low cost, the field limiting ring terminal has become the current mainstream technology. However, when designing the field limiting ring terminal, there are many related parameters, which bring great difficulties and challenges to the design. Especially when the voltage withstand requirement increases and the number of rings increases accordingly, how to design a field limiting ring terminal that meets the voltage withstand requirement is a technical problem that needs to be solved urgently at present. Summary of the Invention

[0004] The main purpose of the present application is to provide a method for determining parameters of a field limiting ring terminal, a preparation method, a parameter determination device, a computer-readable storage medium, and an electronic device, so as to at least solve the problem that it is difficult to design a field limiting ring terminal that meets the voltage withstand requirement in the prior art.

[0005] To achieve the above object, according to one aspect of the present application, a method for determining parameters of a field limiting ring terminal is provided, including: obtaining model parameters of physical models of a plurality of field limiting ring structures, where the field limiting ring structure includes an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different; determining original parameter information according to the plurality of model parameters and the designed breakdown voltage value of the main junction, where the original parameter information is the parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information includes the width of the field limiting ring in each field limiting ring region and the ring pitch between adjacent field limiting rings; performing simulation calculations on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the main junction, and in the case where the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements to obtain the final parameter information.

[0006] Optionally, determining the original parameter information according to the plurality of model parameters and the designed breakdown voltage value of the main junction includes: obtaining a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure according to the plurality of model parameters, where the first functional relationship characterizes the relationship between the width of the initial field limiting ring, the initial ring pitch, and the breakdown voltage value of the initial main junction, the second functional relationship characterizes the relationship between the initial ring pitch and the breakdown voltage value, the third functional relationship characterizes the relationship between the initial ring pitch and the remaining breakdown voltage value, the remaining breakdown voltage value is the difference between the breakdown voltage value and the breakdown voltage value of the initial field limiting ring, the initial ring pitch is the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships are different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships are different; determining the original parameter information according to the first functional relationship, the plurality of second functional relationships, the plurality of third functional relationships, and the designed breakdown voltage value of the main junction.

[0007] Optionally, the original parameter information is determined according to the first function relationship, multiple second function relationships, multiple third function relationships, and the designed withstand voltage value of the main junction, including: determining at least multiple field limiting ring widths, multiple field limiting ring regions corresponding to the field limiting ring widths one by one, and the withstand voltage ranges that each field limiting ring region needs to satisfy according to the first function relationship and the designed withstand voltage value, where the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum value among the maximum withstand voltage values of multiple withstand voltage ranges is not less than the designed withstand voltage value, the widths of the field limiting rings in the same field limiting ring region are all the field limiting ring widths corresponding to the field limiting ring region, and any two field limiting ring widths are different; determining the ring spacing corresponding to multiple field limiting rings in sequence along the first direction according to multiple second function relationships and multiple third function relationships, so that the withstand voltage values that each field limiting ring region can reach are not less than the corresponding maximum withstand voltage value, to obtain the original parameter information, where the first direction is the direction from the field limiting ring region to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, and the target structure is the field limiting ring or the main junction that is adjacent to the field limiting ring and located behind the field limiting ring along the first direction.

[0008] Optionally, according to a plurality of the second functional relationships and a plurality of the third functional relationships, along a first direction, the ring spacings corresponding to the plurality of field limiting rings are sequentially determined, such that the breakdown voltage values achievable by each of the field limiting ring regions are not less than the corresponding maximum breakdown voltage values, including: a first determination step, in a case where the nth field limiting ring is provided in the mth field limiting ring region and n = 1, determining that the breakdown voltage value achievable by the nth field limiting ring is the minimum breakdown voltage value corresponding to the mth field limiting ring region; in a case where the nth field limiting ring is provided in the mth field limiting ring region and n ≠ 1, according to the second functional relationship corresponding to the mth field limiting ring region, determining that the breakdown voltage value achievable by the nth field limiting ring is the breakdown voltage value corresponding to a case where the initial ring spacing is equal to the ring spacing corresponding to the (n - 1)th field limiting ring, m ≥ 1, n ≥ 1, and the (n - 1)th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction; a second determination step, according to the third functional relationship corresponding to the mth field limiting ring region, determining that the ring spacing corresponding to the nth field limiting ring is the initial ring spacing corresponding to a case where the remaining breakdown voltage value is equal to the breakdown voltage value achievable by the nth field limiting ring; a third determination step, in a case where the breakdown voltage value achievable by the mth field limiting ring region provided with the nth field limiting ring is less than the maximum breakdown voltage value corresponding to the mth field limiting ring region, determining that there is still an (n + 1)th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the (n + 1)th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determination step and the second determination step at least once until the breakdown voltage value achievable by the mth field limiting ring region is not less than the corresponding maximum breakdown voltage value; a fourth determination step, in a case where m is less than the number of field limiting ring regions, determining the (m + 1)th field limiting ring region as the new mth field limiting ring region, and cyclically executing the first determination step, the second determination step, and the third determination step at least once until m is greater than or equal to the number of field limiting ring regions, and the (m + 1)th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

[0009] Optionally, the first functional relationship includes a plurality of arrays, each of the arrays including the width of the field limiting ring, a plurality of initial ring spacings corresponding to the width of the field limiting ring, and a plurality of the breakdown voltage values. The widths of the field limiting rings in any two of the arrays are different. At least based on the first functional relationship and the designed breakdown voltage value, determining a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one-to-one to the field limiting ring widths, and the breakdown voltage ranges that each of the field limiting ring regions needs to satisfy includes: screening, according to the first functional relationship, the arrays that meet the design objective from the plurality of arrays, and determining the width of the field limiting ring in each of the arrays that meet the design objective as the field limiting ring width, where the design objective includes that the breakdown voltage value of the main junction is not less than the designed breakdown voltage value, and the area of the field limiting ring terminal is not greater than the designed area value; determining the number of the field limiting ring regions and the relative positional relationship between the plurality of field limiting ring regions according to the plurality of field limiting ring widths, to obtain the first field limiting ring region, the m-th field limiting ring region, ……, the p-th field limiting ring region arranged in sequence along the first direction, p is the number of the field limiting ring regions, and 1 ≤ m < p; determining the maximum breakdown voltage value corresponding to the p-th field limiting ring region as the designed breakdown voltage value, and determining the minimum breakdown voltage value corresponding to the p-th field limiting ring region as the minimum value among the plurality of breakdown voltage values corresponding to the first field limiting ring width, to obtain the breakdown voltage range corresponding to the p-th field limiting ring region, where the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region; determining the maximum breakdown voltage value corresponding to the m-th field limiting ring region as the minimum breakdown voltage value corresponding to the (m + 1)-th field limiting ring region, and determining the minimum breakdown voltage value corresponding to the m-th field limiting ring region as the minimum value among the plurality of breakdown voltage values corresponding to the second field limiting ring width, to obtain the breakdown voltage range corresponding to the m-th field limiting ring region, where the second field limiting ring width is the field limiting ring width corresponding to the m-th field limiting ring region.

[0010] Optionally, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements includes: in the case where the difference is greater than the preset threshold, adding at least one new field limiting ring in the field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; in the case where the difference is not greater than the preset threshold, adjusting the distance between at least some of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirements.

[0011] Optionally, when the difference is greater than a preset threshold, at least one new field limiting ring is added in the field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, including: when the difference is greater than the preset threshold, the structure of the field limiting ring terminal is adjusted according to the adjustment principle of successively setting new field limiting rings in the first direction between the main junction and the first field limiting ring until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold. The distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information. The first field limiting ring is the field limiting ring closest to the main junction in the original parameter information. The width of the new field limiting ring is determined according to the width of the first field limiting ring. The ring pitch corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process. The first direction is the direction from the field limiting ring area to the main junction.

[0012] Optionally, when the difference is not greater than the preset threshold, the distance between at least some of the field limiting rings is adjusted so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirements, including: when the difference is not greater than the preset threshold, the structure of the field limiting ring terminal is adjusted according to at least one of the following adjustment principles until the difference corresponding to the adjusted field limiting ring terminal meets the design requirements: starting from the field limiting ring area farthest from the main junction, the distance between two adjacent field limiting rings in different field limiting ring areas is gradually adjusted in the first direction, where the first direction is the direction from the field limiting ring area to the main junction; starting from the new field limiting ring farthest from the main junction, the ring pitch corresponding to the new field limiting ring is gradually adjusted in the first direction.

[0013] Optionally, model parameters of physical models of multiple field limiting ring structures are obtained, including: establishing multiple physical models; performing simulation calculations on the multiple physical models to obtain the initial ring pitch, breakdown voltage value, and bearing voltage value corresponding to the widths of the multiple initial field limiting rings.

[0014] Optionally, according to the multiple model parameters, a first function relationship, multiple second function relationships, and multiple third function relationships of the field limiting ring structure are obtained, including: using the data fitting method to fit the widths of the multiple initial field limiting rings, the corresponding initial ring spacings, and the breakdown voltage values to obtain the first function relationship; using the data fitting method to fit the multiple initial ring spacings corresponding to the width of each initial field limiting ring and the breakdown voltage value to obtain the second function relationship corresponding to the width of each initial field limiting ring; using the data fitting method to fit the multiple initial ring spacings corresponding to the width of each initial field limiting ring and the remaining breakdown voltage value to obtain the third function relationship corresponding to the width of each initial field limiting ring, where the remaining breakdown voltage value is the difference between the breakdown voltage value and the breakdown voltage value of the initial field limiting ring.

[0015] Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multiple linear regression, and exponential function fitting.

[0016] According to another aspect of the present application, a method for manufacturing a field limiting ring terminal is provided, including: determining the parameters of the field limiting ring terminal by using any one of the parameter determination methods of the field limiting ring terminal; manufacturing the field limiting ring terminal according to the parameters of the field limiting ring terminal.

[0017] According to still another aspect of the present application, a parameter determination device for a field limiting ring terminal is provided, including: an acquisition unit for acquiring model parameters of a physical model of multiple field limiting ring structures, where the field limiting ring structure includes an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different; a determination unit for determining original parameter information according to the multiple model parameters and the designed breakdown voltage value of the main junction, where the original parameter information is the parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and multiple field limiting ring regions located on one side of the main junction, and the original parameter information includes the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings; a calculation unit for performing simulation calculations on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the main junction, and in the case where the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements to obtain the final parameter information.

[0018] According to yet another aspect of the present application, a computer-readable storage medium is provided, where the computer-readable storage medium includes a stored program, and when the program runs, it controls the device where the computer-readable storage medium is located to execute any one of the parameter determination methods of the field limiting ring terminal.

[0019] According to another aspect of the present application, there is provided an electronic device, including: one or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and configured to be executed by the one or more processors, and the one or more programs include a method for determining parameters of any one of the field limiting ring terminals.

[0020] Applying the technical solution of the present application, first obtain the physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring, and then determine the original parameter information including the ring width and ring spacing of the field limiting ring terminal according to the multiple model parameters, so that the theoretical breakdown voltage of the main junction of the field limiting ring terminal is not less than the designed breakdown voltage; finally, perform simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the field limiting ring terminal, and when the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjust the original parameter information to make the difference meet the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the breakdown voltage requirements, ensuring that the final parameter information of the obtained field limiting ring terminal structure can meet the design breakdown voltage requirements, and thus ensuring that the obtained field limiting ring terminal has high device reliability. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] The accompanying drawings forming a part of this application are used to provide a further understanding of the present application. The schematic embodiments and descriptions thereof of the present application are used to explain the present application and do not constitute an improper limitation to the present application. In the drawings:

[0022] Figure 1 It shows a hardware structure block diagram of a mobile terminal for performing a method for determining parameters of a field limiting ring terminal provided in an embodiment of the present application;

[0023] Figure 2 It shows a schematic flowchart of a method for determining parameters of a field limiting ring terminal provided in an embodiment of the present application;

[0024] Figure 3 It shows a schematic structural diagram of an initial model provided in an embodiment of the present application;

[0025] Figure 4 It shows a curve graph of a first functional relationship provided in an embodiment of the present application;

[0026] Figure 5 It shows a curve graph of a second functional relationship and a third functional relationship provided in an embodiment of the present application;

[0027] Figure 6 It shows a flowchart for determining parameters of a field limiting ring terminal provided in an embodiment of the present application;

[0028] Figure 7 Shows a schematic structural diagram of a field limiting ring terminal determined by a method for determining parameters of an application field limiting ring terminal provided according to an embodiment of the present application;

[0029] Figure 8 Shows a schematic diagram of an electric field analysis of a field limiting ring terminal provided according to an embodiment of the present application;

[0030] Figure 9 Shows a comparison result graph of the actual breakdown voltage value and the designed breakdown voltage value of a field limiting ring terminal provided according to an embodiment of the present application;

[0031] Figure 10 Shows a structural block diagram of a device for determining parameters of a field limiting ring terminal provided according to an embodiment of the present application.

[0032] Among them, the above-mentioned drawings include the following reference numerals:

[0033] 102, a processor; 104, a memory; 106, a transmission device; 108, an input / output device. Detailed implementation manners

[0034] It should be noted that, without conflict, the embodiments in the present application and the features in the embodiments may be combined with each other. The present application will be described in detail below with reference to the drawings and in combination with the embodiments.

[0035] In order to enable those skilled in the art to better understand the solution of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments are only a part of the embodiments of the present application, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments in the present application without making creative efforts shall fall within the protection scope of the present application.

[0036] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the drawings are used to distinguish similar objects, and do not necessarily need to describe a specific order or sequence. It should be understood that such data can be interchanged under appropriate circumstances for the embodiments of the present application described herein. In addition, the terms "comprising" and "having" and any variations thereof are intended to cover non-exclusive inclusion. For example, a process, method, system, product or device including a series of steps or units does not necessarily need to be limited to those clearly listed steps or units, but may include other steps or units not clearly listed or inherent to these process, method, product or device.

[0037] As introduced in the background art, there is a problem in the prior art that it is difficult to design a field limiting ring terminal that meets the withstand voltage requirements. To solve this technical problem, embodiments of the present application provide a method for determining parameters of a field limiting ring terminal, a preparation method, a parameter determination device, a computer-readable storage medium, and an electronic device.

[0038] Next, the technical solutions in the embodiments of the present invention will be clearly and completely described with reference to the accompanying drawings in the embodiments of the present invention.

[0039] The method embodiments provided in the embodiments of the present application can be executed on a mobile terminal, a computer terminal, or a similar computing device. Taking running on a mobile terminal as an example, Figure 1 is a hardware structure block diagram of a mobile terminal for a method of determining parameters of a field limiting ring terminal according to an embodiment of the present invention. As Figure 1 shown, the mobile terminal may include one or more ( Figure 1 only one is shown in the figure) processors 102 (the processor 102 may include, but is not limited to, a processing device such as a microprocessor MCU or a programmable logic device FPGA) and a memory 104 for storing data. Among them, the mobile terminal may further include a transmission device 106 for communication functions and an input / output device 108. Those of ordinary skill in the art can understand that Figure 1 the structure shown is only schematic, and it does not limit the structure of the mobile terminal. For example, the mobile terminal may further include more or fewer components than Figure 1 shown in the figure, or have a different configuration from Figure 1 shown in the figure.

[0040] The memory 104 can be used to store computer programs, for example, software programs and modules of application software, such as the computer program corresponding to the parameter determination method of the field limiting ring terminal in the embodiments of the present invention. The processor 102 executes various functional applications and data processing by running the computer program stored in the memory 104, that is, the described method is implemented. The memory 104 may include a high-speed random access memory, and may also include a non-volatile memory, such as one or more magnetic storage devices, flash memories, or other non-volatile solid-state memories. In some instances, the memory 104 may further include a memory remotely disposed relative to the processor 102, and these remote memories can be connected to the mobile terminal through a network. Examples of the network include but are not limited to the Internet, an enterprise intranet, a local area network, a mobile communication network, and combinations thereof. The transmission device 106 is used to receive or send data via a network. A specific example of the network may include a wireless network provided by a communication provider of the mobile terminal. In one instance, the transmission device 106 includes a network adapter (Network Interface Controller, abbreviated as NIC), which can be connected to other network devices through a base station and thus can communicate with the Internet. In one instance, the transmission device 106 may be a radio frequency (RF) module, which is used to communicate with the Internet wirelessly.

[0041] In this embodiment, a parameter determination method for a field limiting ring terminal running on a mobile terminal, a computer terminal, or a similar computing device is provided. It should be noted that the steps shown in the flowchart of the accompanying drawings can be executed in a computer system such as a set of computer-executable instructions, and although the logical order is shown in the flowchart, in some cases, the steps shown or described can be executed in a different order than here.

[0042] Figure 2 It is a flowchart of the parameter determination method for the field limiting ring terminal according to the embodiments of the present application. As Figure 2 shown, the method includes the following steps:

[0043] Step S202, obtaining model parameters of physical models of multiple field limiting ring structures, where the field limiting ring structures include an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different;

[0044] In this embodiment, there may be only one initial field limiting ring in the field limiting ring structure.

[0045] Step S204: Determine the original parameter information according to the multiple model parameters and the designed breakdown voltage value of the main junction. The original parameter information is the parameter information of the field-limiting ring terminal, and the field-limiting ring terminal includes the main junction and multiple field-limiting ring regions located on one side of the main junction. The original parameter information includes the width of the field-limiting ring in each field-limiting ring region and the ring pitch between adjacent field-limiting rings.

[0046] In this embodiment, multiple field-limiting ring terminals may be located on the same side of the main junction. Determining the original parameter information according to the multiple model parameters and the designed breakdown voltage value of the main junction is to ensure that the theoretical breakdown voltage of the main junction of the field-limiting ring terminal can meet its designed breakdown voltage value. By determining the width of the field-limiting ring in each field-limiting ring region and the ring pitch between adjacent field-limiting rings, the structural dimensions and arrangements of the field-limiting rings in the field-limiting ring terminal can be effectively controlled.

[0047] Step S206: Perform simulation calculations on the field-limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the main junction. When the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, and obtain the final parameter information.

[0048] In this embodiment, the actual breakdown voltage value is obtained through simulation calculations. When the difference between the actual breakdown voltage value and the designed breakdown voltage value is relatively large, the original parameter information is adjusted to ensure that the actual breakdown voltage value of the main junction of the field-limiting ring terminal can meet its designed breakdown voltage value. Those skilled in the art can flexibly set the specific threshold value of the design requirements according to the actual design needs of the field-limiting ring terminal. When the difference between the designed breakdown voltage value and the actual breakdown voltage value meets the design requirements, the determined original parameter information is the final parameter information.

[0049] As can be seen from the above, in the embodiment of the present application, first obtain the physical model parameters of multiple field-limiting ring structures with different ring widths of the field-limiting ring, and then determine the original parameter information including the ring width and ring pitch of the field-limiting ring terminal according to the multiple model parameters, so that the theoretical breakdown voltage of the main junction of the field-limiting ring terminal is not less than the designed breakdown voltage; finally, perform simulation calculations on the field-limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the field-limiting ring terminal. When the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjust the original parameter information so that the difference meets the design requirements, thereby obtaining the final parameter information of the field-limiting ring terminal, solving the problem in the prior art that it is difficult to design a field-limiting ring terminal that meets the breakdown voltage requirements, ensuring that the final parameter information of the obtained field-limiting ring terminal structure can meet the design breakdown voltage requirements, and thus ensuring that the obtained field-limiting ring terminal device has high reliability.

[0050] Specifically, Figure 3It is a schematic structural diagram of a physical model of a field limiting ring structure according to an embodiment of the present application. As Figure 3 shown, the physical model includes an initial main junction M and an initial field limiting ring M+1. The physical model further includes a substrate S. The initial main junction M and the initial field limiting ring M+1 are spaced apart in the substrate S. Wd is the ring spacing between the initial main junction M and the initial field limiting ring M+1. Wri is the width of the initial field limiting ring M+1. ½Wri is half of the width of the initial field limiting ring M+1.

[0051] According to some optional embodiments of the present application, step S204: Determine the original parameter information according to the multiple model parameters and the designed breakdown voltage value of the main junction, including:

[0052] Step S2041: Obtain a first function relationship, multiple second function relationships, and multiple third function relationships of the field limiting ring structure according to the multiple model parameters. The first function relationship characterizes the relationship between the width of the initial field limiting ring, the initial ring spacing, and the breakdown voltage value of the initial main junction. The second function relationship characterizes the relationship between the initial ring spacing and the breakdown voltage value. The third function relationship characterizes the relationship between the initial ring spacing and the remaining breakdown voltage value. The remaining breakdown voltage value is the difference between the breakdown voltage value and the breakdown voltage value of the initial field limiting ring. The initial ring spacing is the distance between the initial field limiting ring and the initial main junction. The widths of the initial field limiting rings corresponding to any two of the second function relationships are different. The widths of the initial field limiting rings corresponding to any two of the third function relationships are different;

[0053] Specifically, the second function relationship is a function that characterizes the relationship between the initial ring spacing and the breakdown voltage value when the width of the initial field limiting ring is fixed. The second function relationship corresponds one-to-one with the width of the initial field limiting ring. The third function relationship is a relationship that characterizes the relationship between the initial ring spacing and the remaining breakdown voltage value when the width of the initial field limiting ring is fixed. The third function relationship corresponds one-to-one with the width of the initial field limiting ring.

[0054] Step S2042: Determine the original parameter information according to the first function relationship, the multiple second function relationships, the multiple third function relationships, and the designed breakdown voltage value of the main junction.

[0055] In this embodiment, according to the first function relationship, multiple second function relationships, and multiple third function relationships, the original parameter information of the field limiting ring structure can be determined based on the designed breakdown voltage value of the main junction, further enabling the theoretical breakdown voltage value of the main junction to meet the breakdown voltage design value, and further ensuring that the main junction of the field limiting ring terminal designed according to the original parameter information can theoretically withstand external pressure effectively when subjected to external pressure, thereby further improving the design accuracy of the field limiting ring structure and facilitating subsequent optimization of the performance of the field limiting ring structure by adjusting the original parameter information when the actual breakdown voltage does not meet the design requirements; moreover, this application avoids the problems of blind design and trial-and-error in the design process of the field limiting ring terminal and improves the overall efficiency of the design of the field limiting ring terminal.

[0056] It should be noted that the first function relationship characterizes the relationship among the width of the initial field limiting ring, the initial ring spacing, and the breakdown voltage value of the initial main junction, which involves parameters of the physical model, such as material properties, geometric dimensions, etc., and is used to describe the electrical characteristics of the field limiting ring structure; the multiple second function relationships characterize the relationship between the initial ring spacing and the breakdown voltage value, indicating how the change in the ring spacing affects the breakdown voltage capacity of the main junction; the multiple third function relationships characterize the relationship between the initial ring spacing and the remaining pressure-bearing value, indicating how the change in the ring spacing affects the pressure-bearing capacity of the field limiting ring.

[0057] According to some further optional embodiments of the present application, step S2042: Determine the original parameter information according to the first function relationship, multiple second function relationships, multiple third function relationships, and the designed breakdown voltage value of the main junction, including the following steps:

[0058] Step S20421: Determine at least multiple field limiting ring widths, multiple field limiting ring regions corresponding one-to-one to the field limiting ring widths, and the breakdown voltage ranges that each field limiting ring region needs to meet according to the first function relationship and the designed breakdown voltage value. The breakdown voltage range includes the maximum breakdown voltage value and the minimum breakdown voltage value. The largest of the maximum breakdown voltage values of the multiple breakdown voltage ranges is not less than the designed breakdown voltage value. The widths of the field limiting rings in the same field limiting ring region are all the field limiting ring widths corresponding to the field limiting ring region, and the widths of any two field limiting rings are different;

[0059] Specifically, the widths of the field limiting rings in the same field limiting ring region are the same, and are all the field limiting ring widths corresponding to the field limiting ring region, while the field limiting ring widths corresponding to different field limiting ring regions are different. The number of the field limiting ring widths is the number of the field limiting ring regions. Through this step, the number of the field limiting ring regions, the breakdown voltage ranges of each field limiting ring region, and the widths of each field limiting ring are obtained. Among them, the breakdown voltage range that the field limiting ring region needs to meet refers to the breakdown voltage range that the main junction can reach after setting at least one field limiting ring in the field limiting ring region according to the corresponding field limiting ring width.

[0060] Step S20422: According to the multiple second functional relationships and the multiple third functional relationships, along the first direction, sequentially determine the ring spacings corresponding to the multiple field limiting rings, such that the breakdown voltages achievable by the respective field limiting ring regions are not less than the corresponding maximum breakdown voltages, to obtain the original parameter information. The first direction is the direction from the field limiting ring region towards the main junction. The ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, where the target structure is the field limiting ring adjacent to the field limiting ring and located after the field limiting ring along the first direction or the main junction.

[0061] Specifically, the third functional relationship corresponds one-to-one with the width of the initial field limiting ring. The breakdown voltage achievable by the field limiting ring region refers to the breakdown voltage that the main junction can achieve when the field limiting rings are arranged in the field limiting ring region according to the ring spacing. The original parameter information may include the number of field limiting ring regions, the widths of the respective field limiting rings, and the ring spacing. The original parameter information may also include the number of field limiting ring regions, the breakdown voltage ranges of the respective field limiting ring regions, the widths of the respective field limiting rings, and the ring spacing. When the multiple field limiting ring regions are located on the left side of the main junction, the first direction is from left to right; when the multiple field limiting ring regions are located on the right side of the main junction, the first direction is from right to left. Along the first direction, the multiple field limiting rings are respectively the 1st field limiting ring, the 2nd field limiting ring, the 3rd field limiting ring, …, the last field limiting ring. Sequentially determine the distance between the 1st field limiting ring and the 2nd field limiting ring to obtain the ring spacing corresponding to the 1st field limiting ring, determine the distance between the 2nd field limiting ring and the 3rd field limiting ring to obtain the ring spacing corresponding to the 2nd field limiting ring, …, determine the distance between the last field limiting ring and the main junction to obtain the ring spacing corresponding to the last field limiting ring.

[0062] In this embodiment, through the analysis of the first functional relationship and the designed breakdown voltage, multiple field limiting ring widths, the multiple field limiting ring regions corresponding thereto, and the breakdown voltage ranges that the respective field limiting ring regions need to satisfy are determined, thereby ensuring that the maximum breakdown voltage among the multiple breakdown voltage ranges is not less than the designed breakdown voltage; and according to the second functional relationship and the third functional relationship, the third functional relationship characterizing the relationship between the initial ring spacing and the remaining breakdown voltage is determined, and through the multiple second functional relationships and the multiple third functional relationships, the ring spacings corresponding to the multiple field limiting rings are determined along the first direction, which can ensure that the respective field limiting ring regions determined according to these ring spacings can achieve the corresponding maximum breakdown voltages, so as to obtain the original parameter information including the number of field limiting ring regions, the widths of the field limiting rings in the respective field limiting ring regions, and their corresponding ring spacings, further ensuring that the theoretical breakdown voltage of the field limiting ring terminal main junction designed according to this original parameter information is not less than the designed breakdown voltage, thereby further achieving the effect of obtaining a field limiting ring terminal that meets the breakdown voltage requirements.

[0063] In some further exemplary embodiments of the present application, according to a plurality of the second functional relationships and a plurality of the third functional relationships, along a first direction, the ring spacings corresponding to the plurality of field limiting rings are sequentially determined such that the breakdown voltage values achievable by each of the field limiting ring regions are not less than the corresponding maximum breakdown voltage values, including:

[0064] A first determination step, when the nth field limiting ring is provided in the mth field limiting ring region and n = 1, determining that the breakdown voltage value achievable by the nth field limiting ring is the minimum breakdown voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is provided in the mth field limiting ring region and n ≠ 1, according to the second functional relationship corresponding to the mth field limiting ring region, determining that the breakdown voltage value achievable by the nth field limiting ring is the breakdown voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the (n - 1)th field limiting ring, m ≥ 1, n ≥ 1, and the (n - 1)th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction;

[0065] Specifically, when the first field limiting ring is provided in the field limiting ring region, the breakdown voltage value achievable by the first field limiting ring is the minimum breakdown voltage value in the breakdown voltage range that the field limiting ring region needs to satisfy. When there are more than one field limiting rings provided in the field limiting ring region, the breakdown voltage value achievable by the nth field limiting ring is the breakdown voltage value corresponding to the case where the initial ring spacing in the second functional relationship is equal to the ring spacing between the (n - 1)th field limiting ring and the nth field limiting ring.

[0066] A second determination step, according to the third functional relationship corresponding to the mth field limiting ring region, determining that the ring spacing corresponding to the nth field limiting ring is the initial ring spacing corresponding to the case where the remaining breakdown voltage value is equal to the breakdown voltage value achievable by the nth field limiting ring;

[0067] A third determination step, when the breakdown voltage value achievable by the mth field limiting ring region where the nth field limiting ring is provided is less than the maximum breakdown voltage value corresponding to the mth field limiting ring region, determining that there is still an (n + 1)th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the (n + 1)th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determination step and the second determination step at least once until the breakdown voltage value achievable by the mth field limiting ring region is not less than the corresponding maximum breakdown voltage value;

[0068] Fourth determination step: when m is less than the number of the field limiting ring regions, determine the (m + 1)-th field limiting ring region as the new m-th field limiting ring region, and repeatedly execute the first determination step, the second determination step, and the third determination step at least once until m is greater than or equal to the number of the field limiting ring regions. The (m + 1)-th field limiting ring region is the field limiting ring region located after the m-th field limiting ring region along the first direction.

[0069] In the embodiment, the ring spacings between the field limiting rings in each field limiting ring region are sequentially determined along the first direction, so that the breakdown voltage value achievable by the field limiting rings arranged according to the ring spacings is not less than the maximum breakdown voltage value corresponding to the field limiting ring region, further ensuring that the theoretical breakdown voltage value of the main junction of the field limiting ring terminal is not less than the designed breakdown voltage value.

[0070] According to some other optional embodiments of the present application, the first functional relationship includes multiple arrays, each array including the width of the field limiting ring, multiple initial ring spacings corresponding to the width of the field limiting ring, and multiple breakdown voltage values. The widths of the field limiting rings in any two arrays are different. Step S20421: Determine multiple field limiting ring widths, multiple field limiting ring regions corresponding to the field limiting ring widths one by one, and the breakdown voltage ranges that each field limiting ring region needs to satisfy, at least according to the first functional relationship and the designed breakdown voltage value, including the following steps:

[0071] According to the first functional relationship, screen the arrays that meet the design objective from the multiple arrays, and determine the width of the field limiting ring in each array that meets the design objective as the field limiting ring width. The design objective includes that the breakdown voltage value of the main junction is not less than the designed breakdown voltage value, and the area of the field limiting ring terminal is not greater than the designed area value;

[0072] Specifically, there are multiple arrays that meet the design objective, and the number of the arrays that meet the design objective is the number of the field limiting ring regions. The widths of the field limiting rings in the same array are the same. In the same array, the field limiting ring width corresponds to multiple different initial ring spacings and multiple different breakdown voltage values.

[0073] According to the multiple field limiting ring widths, determine the number of the field limiting ring regions and the relative positional relationship between the multiple field limiting ring regions, to obtain the first field limiting ring region, the m-th field limiting ring region,..., the p-th field limiting ring region arranged in sequence along the first direction, where p is the number of the field limiting ring regions, and 1 ≤ m < p;

[0074] Specifically, the p-th field limiting ring region is the field limiting ring region closest to the main junction. The relative positional relationship between the multiple field limiting ring regions can be determined according to the magnitude relationship between the widths of the multiple field limiting rings, and is obtained by arranging the corresponding multiple field limiting ring regions in ascending order of the widths of the multiple field limiting rings along the first direction, that is, the field limiting ring widths corresponding to the 1st field limiting ring region, the m-th field limiting ring region, ……, the p-th field limiting ring region are getting larger and larger.

[0075] Determine the maximum breakdown voltage value corresponding to the p-th field limiting ring region as the designed breakdown voltage value, and determine the minimum breakdown voltage value corresponding to the p-th field limiting ring region as the minimum value among the multiple breakdown voltage values corresponding to the first field limiting ring width, so as to obtain the breakdown voltage range corresponding to the p-th field limiting ring region, where the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region;

[0076] Specifically, the maximum breakdown voltage value of the p-th field limiting ring region closest to the main junction is the designed breakdown voltage value of the main junction; the minimum breakdown voltage value of the p-th field limiting ring region is the minimum value among the multiple breakdown voltage values in the array where the first field limiting ring width is located.

[0077] Determine the maximum breakdown voltage value corresponding to the m-th field limiting ring region as the minimum breakdown voltage value corresponding to the (m + 1)-th field limiting ring region, and determine the minimum breakdown voltage value corresponding to the m-th field limiting ring region as the minimum value among the multiple breakdown voltage values corresponding to the second field limiting ring width, so as to obtain the breakdown voltage range corresponding to the m-th field limiting ring region, where the second field limiting ring width is the field limiting ring width corresponding to the m-th field limiting ring region.

[0078] In the embodiment, an array that meets the designed area value and the designed breakdown voltage value is screened out from an array including the width of the field limiting ring, multiple initial ring spacings, and multiple breakdown voltage values, and then the breakdown voltage range and the field limiting ring width of each field limiting ring region in the field limiting ring terminal are determined according to the screened array, so that the original parameter information of the field limiting ring terminal that takes into account miniaturization and high resistivity can be obtained quickly and efficiently, thereby further ensuring a relatively high parameter determination efficiency and accuracy of the field limiting ring terminal.

[0079] According to some other alternative embodiments of the present application, the original parameter information is adjusted so that the difference corresponding to the adjusted parameter information meets the design requirements, including: when the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; when the difference is not greater than the preset threshold, the distance between at least some of the field limiting rings is adjusted to obtain an adjusted field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirements. In the embodiment, when the difference is greater than the preset threshold, it indicates that the actual breakdown voltage is much smaller than the designed breakdown voltage. At this time, the original parameter information is adjusted by adding field limiting rings, so that the actual breakdown voltage can be quickly increased. When the difference is less than or equal to the preset threshold, it indicates that the actual breakdown voltage is close to the designed breakdown voltage. At this time, the original parameter information is adjusted by adjusting the ring spacing between the field limiting rings, which can achieve a precise adjustment of the actual breakdown voltage. While further ensuring that the parameter information of the adjusted field limiting ring terminal meets the breakdown voltage design requirements, it further ensures that the parameter information of the finally obtained field limiting ring terminal meets the miniaturization requirements. This embodiment divides the adjustment of the original parameter information of the field limiting ring terminal into two stages according to the magnitude relationship between the difference and the preset threshold, so that the difference determined by the adjusted parameter information meets the design requirements. In this way, it not only ensures a high design efficiency of the field limiting ring terminal, but also further ensures that a field limiting ring terminal that meets the design breakdown voltage requirements and miniaturization requirements can be obtained.

[0080] In some other exemplary embodiments of the present application, when the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal so that the corresponding difference of the adjusted field limiting ring terminal is not greater than the preset threshold, including: when the difference is greater than the preset threshold, the structure of the field limiting ring terminal is adjusted according to the adjustment principle of successively arranging new field limiting rings along the first direction between the main junction and the first field limiting ring (subsequently referred to as Rule A) until the corresponding difference of the adjusted field limiting ring terminal is not greater than the preset threshold. Among them, the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information. The first field limiting ring is the field limiting ring closest to the main junction in the original parameter information. The width of the new field limiting ring is determined according to the width of the first field limiting ring, and the ring pitch corresponding to the new field limiting ring is determined according to the minimum line width that can be achieved by the process. In this embodiment, when the actual breakdown voltage is much smaller than the designed breakdown voltage, starting from the side of the main junction close to the first field limiting ring, new field limiting rings are successively added along the first direction pointing from the field limiting ring area to the main junction until the difference is less than or equal to the preset threshold, which further ensures that the actual breakdown voltage can be quickly increased to be close to or greater than the designed breakdown voltage, thereby further improving the design efficiency of the field limiting ring terminal.

[0081] Further, the width of the new field limiting ring is the same as the width of the first field limiting ring, and the ring pitch corresponding to the new field limiting ring is the minimum line width that can be achieved by the process.

[0082] In some other exemplary embodiments of the present application, when the difference is not greater than the preset threshold, the distance between at least some of the field limit rings is adjusted so that the difference corresponding to the field limit ring terminal after the adjustment meets the design requirements, including: when the difference is not greater than the preset threshold, the following adjustment principle (hereinafter referred to as Rule B) is adopted to adjust the structure of the field limit ring terminal until the difference corresponding to the field limit ring terminal after the adjustment meets the design requirements: starting from the field limit ring region farthest from the main junction, gradually adjust the distance between two adjacent field limit rings located in different field limit ring regions along a first direction, where the first direction is from the field limit ring region towards the main junction; starting from the new field limit ring farthest from the main junction, gradually adjust the ring pitch corresponding to the new field limit ring along the first direction. In this embodiment, when the actual breakdown voltage value is close to the designed breakdown voltage value, starting from the field limit ring region farthest from the main junction, gradually adjust the distance between adjacent field limit ring regions along the first direction, and / or starting from the new field limit ring farthest from the main junction, gradually adjust the distance between adjacent new field limit rings along the first direction until the difference meets the design requirements. This further ensures that the parameter information of the field limit ring terminal after adjustment meets the breakdown voltage design requirements, and at the same time further ensures that the parameter information of the finally obtained field limit ring terminal meets the miniaturization requirements, thereby further achieving the effect of designing a field limit ring terminal that takes into account both miniaturization and high blocking performance.

[0083] The embodiment can ensure that the structure of the field limit ring terminal meets the design requirements, and fine adjustment can be carried out even when the difference is not greater than the preset threshold. By gradually adjusting the distance between the field limit rings and the ring pitch, the structure of the field limit ring terminal can be effectively optimized to ensure its performance and stability within the design requirements, and the field limit ring terminal can be reasonably adjusted according to the actual situation to meet the design requirements.

[0084] It should be noted that those skilled in the art of the present application can determine the specific values of the number of the field limit ring regions, the corresponding field limit ring width, and the ring pitch corresponding to the field limit rings therein according to the actual needs and the solution of the present application.

[0085] Exemplarily, obtaining the model parameters of the physical models of multiple field limit ring structures includes: establishing multiple physical models; performing simulation calculations on the multiple physical models to obtain the initial ring pitch, breakdown voltage value, and bearing voltage value corresponding to the width of the multiple initial field limit rings. In this embodiment, by establishing multiple physical models and performing simulation calculations on them, the multiple initial ring pitches, multiple breakdown voltage values, and multiple bearing voltage values corresponding to the initial field limit ring width can be obtained more accurately, providing more accurate data support for establishing the functional relationship representing the corresponding relationship between these model parameters subsequently.

[0086] In some alternative embodiments of the present application, obtaining a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure according to the plurality of model parameters includes: using the data fitting method to fit the widths of the plurality of initial field limiting rings, the corresponding initial ring spacings, and the breakdown voltage value to obtain the first functional relationship; using the data fitting method to fit the plurality of initial ring spacings corresponding to the width of each initial field limiting ring and the breakdown voltage value to obtain the second functional relationship corresponding to the width of each initial field limiting ring; using the data fitting method to fit the plurality of initial ring spacings corresponding to the width of each initial field limiting ring and the remaining breakdown voltage value to obtain the third functional relationship corresponding to the width of each initial field limiting ring, where the remaining breakdown voltage value is the difference between the breakdown voltage value and the breakdown voltage value of the initial field limiting ring. Establishing the first functional relationship, the second functional relationship, and the third functional relationship by the data fitting method facilitates subsequent prediction, analysis, and optimization of data based on these functional relationships.

[0087] Figure 4 Exemplarily, a curve graph representing the first functional relationship is obtained by using the data fitting method to fit the widths of the plurality of initial field limiting rings, the corresponding initial ring spacings, and the breakdown voltage value. Figure 4 Curve graphs of the widths of various initial field limiting rings are shown. It can be Figure 4 seen that when the width of the initial field limiting ring remains unchanged, the larger the initial ring spacing, the smaller the corresponding breakdown voltage value; when the initial ring spacing remains unchanged, the larger the width of the initial field limiting ring, the larger the corresponding breakdown voltage value.

[0088] Figure 5 Exemplarily, curve graphs representing the second functional relationship BV(M) and the third functional relationship BV(M)-V(M+1) obtained by using the data fitting method are shown. Figure 5 In this case, first, the breakdown voltage value that the nth field limiting ring can reach (i.e., the ordinate of point B) is determined according to the second functional relationship, and then, according to the third functional relationship and the ordinate of point B, the ring spacing corresponding to the nth field limiting ring is determined as the initial ring spacing corresponding to the case where the remaining breakdown voltage value is equal to the breakdown voltage value that the nth field limiting ring can reach, that is, the intersection point of the horizontal axis passing through point B and the third functional relationship is determined to obtain point C, and the abscissa of point C is the ring spacing corresponding to the nth field limiting ring. Then, the intersection point of the vertical axis passing through point C and the second functional relationship is determined to obtain point D, and the ordinate of point D is the breakdown voltage value that the (n+1)th field limiting ring can reach, and the abscissa of the intersection point E of the horizontal axis passing through point D and the third functional relationship is the ring spacing corresponding to the (n+1)th field limiting ring. The ring spacings corresponding to the plurality of field limiting rings are sequentially determined in the above manner to obtain the ring spacing corresponding to each field limiting ring.

[0089] Those skilled in the art can choose any suitable data fitting method to process the model parameters, so as to obtain the first functional relationship, the second functional relationship, and the third functional relationship. Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multiple linear regression, and exponential function fitting.

[0090] In the embodiment, the data fitting method can determine the values of the model parameters, so that the model can better fit the actual data. Different data fitting methods can select appropriate fitting functions according to the characteristics of the data and the form of the model, and then obtain more accurate parameter estimation results. For example, polynomial fitting is suitable for approximating complex non-linear relationships, Gaussian fitting is suitable for data with obvious Gaussian distribution characteristics, multiple linear regression is suitable for the influence of multiple independent variables on the dependent variable, and exponential function fitting is suitable for data showing exponential growth or decay. The parameters determined by the data fitting method can be used to establish a more accurate model, so as to better describe and predict the actual data.

[0091] It should be noted that the polynomial fitting is a method of using a polynomial function to approximate and depict data points. By finding the polynomial function that best fits the data points, the values of unknown data points can be predicted using this polynomial function; the Gaussian fitting is a mathematical method for curve fitting data. It is based on the Gaussian function, also known as the normal distribution curve, and fits the data by adjusting the parameters of the Gaussian function; the multiple linear regression is a statistical analysis method for establishing a relationship model between multiple independent variables and one dependent variable. In multiple linear regression, the influence of the independent variables on the dependent variable is estimated by minimizing the sum of squared residuals; the exponential function fitting is a mathematical method for approximately describing the relationship between a set of data points through an exponential model, especially suitable for scenarios where the data shows a trend of rapid growth or decay over time.

[0092] Optionally, the semiconductor materials used in the field limiting ring structure include, but are not limited to: silicon, silicon carbide, gallium nitride, and gallium arsenide and other materials.

[0093] In order to enable those skilled in the art to more clearly understand the technical solution of the present application, the implementation process of the parameter determination method for the field limiting ring terminal of the present application will be described in detail below with specific embodiments.

[0094] This embodiment relates to a specific parameter determination method for a field limiting ring terminal. Taking the setting of a field limiting ring on the right side of the main junction as an example, as Figure 6 shown, the method includes the following steps:

[0095] Step S1: Establish physical models of h field limiting ring structures, where the ring widths of the h physical models are different and the ring spacings are variable;

[0096] Optionally, in this embodiment, h = 5, and the ring widths are respectively: 6 µm, 5 µm, 4 µm, 3 µm, 2 µm;

[0097] Step S2: By calculating the model parameters of h physical models, a first functional relationship f1 characterizing the ring width, ring pitch, and the breakdown voltage withstand capacity of the model (i.e., the breakdown voltage value of the main junction) is obtained;

[0098] Step S3: According to the first functional relationship, based on the design goal that the breakdown voltage is not less than the designed breakdown voltage and the structural area is not greater than the designed area, g physical models that meet the design goal are selected from the h physical models, g ring widths are obtained, thereby obtaining g field-limiting ring regions and the breakdown voltage ranges of each field-limiting ring region. One field-limiting ring region corresponds to one ring width, and the zoning rule of the field-limiting ring terminal is obtained:

[0099] zone1 (Wr1): BVmin~BV1,

[0100] zone2 (Wr2): BV1~BV2,

[0101] ……,

[0102] zonep (Wrp): BVp - 1~BVp, where the numerical values of the breakdown voltages BVmin, BV1, BV2, ……, BVp - 1, and BVp are getting larger and larger, and BVp ≥ the designed breakdown voltage BVaim;

[0103] Optionally, in this embodiment, 3 physical models are selected from 5 physical models, that is, g = 3, and the ring widths are respectively 5 µm, 4 µm, and 2 µm. There are 3 field-limiting ring regions. The ring width Wr1 of the field-limiting ring in the first field-limiting ring region zone1 is 2 µm, the ring width Wr2 of the field-limiting ring in the second field-limiting ring region zone2 is 4 µm, and the ring width Wr3 of the field-limiting ring in the third field-limiting ring region zone3 is 5 µm;

[0104] Step S4: According to the model parameters of the g physical models, g second functional relationships f2 characterizing the relationship between the breakdown voltage value of the main junction and the ring pitch are calculated, and g functional relationships f3 characterizing the relationship between the bearing voltage value of the field-limiting ring and the ring pitch are calculated. By taking the difference according to the second functional relationship f2 and the functional relationship f3, g third functional relationships f4 can be obtained;

[0105] Optionally, in this embodiment, the second functional relationships f2 obtained by fitting are respectively , , ; The functional relationships f3 are respectively: , , , where, Characterize the breakdown voltage value, Characterize the pressure-bearing value, Characterize the ring width, 、 、 are all constants, e is the Euler number, is the ring pitch, and i = 6, 7, 8 respectively characterize that the amount of data participating in fitting is 6, 7, 8.

[0106] Step S5: For each field-limiting ring region, use the second functional relationship and the third functional relationship to solve the function starting from the rightmost side of the main junction (i.e., the first field-limiting ring far from the main junction), and obtain the ring pitch distribution data corresponding to each field-limiting ring, thereby establishing a primary multi-region field ring terminal:

[0107] zone1 (Wr1): Wd1, Wd2, ……, Wdo, that is, there are o ring pitches in the field-limiting ring region zone1;

[0108] zone2 (Wr2): Wd1, Wd2, ……, Wdp', that is, there are p' ring pitches in the field-limiting ring region zone2;

[0109] ……,

[0110] zonep (Wrp): Wd1, Wd2, ……, Wdq, that is, there are q ring pitches in the field-limiting ring region zonep;

[0111] Step S6: Perform calculation and analysis on the primary multi-region field ring terminal to determine the actual breakdown voltage (BV) value of the structure. If the actual breakdown voltage value of the structure meets the designed breakdown voltage value, determine that this structure is the final field-limiting ring terminal structure. If the actual breakdown voltage value of the structure does not meet the designed breakdown voltage value, use the AB rule to adjust the parameters of the field-limiting ring terminal until the actual breakdown voltage value meets the designed breakdown voltage value to obtain the final field-limiting ring terminal structure. The AB rule includes the A rule and the B rule. The A rule is: when the actual breakdown voltage BV is much smaller than the designed breakdown voltage BVaim, start adding field-limiting rings one by one from the leftmost side of the main junction. The width of the added field-limiting ring is Wrp, and the pitch is the minimum line width that can be satisfied by the process, until the actual breakdown voltage BV is close to the designed breakdown voltage BVaim. The B rule is: when the actual breakdown voltage BV is close to the designed breakdown voltage BVaim, start optimizing the positions of the field-limiting rings in turn from the rightmost side of the main junction: the pitch between each field-limiting ring region, the pitch between the field-limiting rings added in the A rule, until the actual breakdown voltage BV meets the designed breakdown voltage BVaim.

[0112] Figure 7 Exemplarily shows the structural schematic diagram of the field-limiting ring terminal determined by using the method for determining the parameters of the field-limiting ring terminal of the present application, Figure 8 Exemplarily shows Figure 7 the electric field analysis diagram of the shown field-limiting ring terminal,Figure 9 Exemplarily shown is Figure 7 a comparison result graph of the actual breakdown voltage value and the designed breakdown voltage value of the field limiting ring terminal shown, as Figure 7 , Figure 8 and Figure 9 shown. The finally obtained terminal breakdown voltage exceeds the designed breakdown voltage value, and the terminal size is compact, alleviating the electric field concentration effect of the power semiconductor device terminal, improving the terminal efficiency of the power semiconductor device, saving the time required for design, and the finally obtained design result in this embodiment meets the electric field expansion situation and breakdown voltage requirements for terminal protection.

[0113] It should be noted that the specific relational expressions of the second function relationship f2 and the function relationship f3 are not limited to the described relational expressions, and those skilled in the art can obtain different types of relational expressions through data fitting to characterize the function relationship.

[0114] The embodiment of the present application also provides a parameter determination device for a field limiting ring terminal. It should be noted that the parameter determination device for the field limiting ring terminal in the embodiment of the present application can be used to execute the parameter determination method for the field limiting ring terminal provided in the embodiment of the present application. This device is used to implement the above embodiment and the preferred implementation manner, and those that have been described will not be repeated. As used hereinafter, the term "module" can be a combination of software and / or hardware that can achieve a predetermined function. Although the devices described in the following embodiments are preferably implemented in software, implementation in hardware, or a combination of software and hardware is also possible and contemplated.

[0115] The following introduces the parameter determination device for the field limiting ring terminal provided in the embodiment of the present application.

[0116] Figure 10 is a schematic diagram of the parameter determination device for the field limiting ring terminal according to the embodiment of the present application. As Figure 10 shown, the device includes:

[0117] An acquisition unit 10, configured to acquire model parameters of physical models of multiple field limiting ring structures, where the field limiting ring structure includes an initial main junction and an initial field limiting ring located on one side of the initial main junction, and the widths of the initial field limiting rings corresponding to different field limiting ring structures are different;

[0118] In this embodiment, there may be only one initial field limiting ring in the field limiting ring structure.

[0119] A determination unit 20, configured to determine original parameter information according to a plurality of the model parameters and the designed breakdown voltage value of the main junction, where the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information includes the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings;

[0120] In this embodiment, a plurality of the field limiting ring terminals may be located on the same side of the main junction. Determining the original parameter information according to a plurality of model parameters and the designed breakdown voltage value of the main junction is to ensure that the theoretical breakdown voltage of the main junction of the field limiting ring terminal can meet its designed breakdown voltage value. By determining the width of the field limiting ring in each field limiting ring region and the ring spacing between adjacent field limiting rings, the structural dimensions and arrangements of the field limiting rings in the field limiting ring terminal can be effectively controlled.

[0121] A calculation unit 30, configured to perform a simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the main junction, and in the case that the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, and obtain final parameter information.

[0122] In this embodiment, the actual breakdown voltage value is obtained through simulation calculation, and in the case that the difference between the actual breakdown voltage value and the designed breakdown voltage value is relatively large, the original parameter information is adjusted, so as to ensure that the actual breakdown voltage value of the main junction of the field limiting ring terminal can meet its designed breakdown voltage value. Those skilled in the art can flexibly set the specific threshold value of the design requirements according to the actual design needs of the field limiting ring terminal. In the case that the difference between the designed breakdown voltage value and the actual breakdown voltage value meets the design requirements, the determined original parameter information is the final parameter information.

[0123] As can be seen from the above, in the embodiment of the present application, physical model parameters of a plurality of field limiting ring structures with different ring widths of the field limiting ring are obtained through an acquisition unit, and an original parameter information including the ring width and the ring spacing of the field limiting ring terminal is determined by a determination unit according to a plurality of model parameters, so that the theoretical main junction breakdown voltage of the field limiting ring terminal is not less than the designed breakdown voltage; a calculation unit performs a simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual breakdown voltage value of the field limiting ring terminal, and when the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference meets the design requirements, thereby obtaining the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the breakdown voltage requirements, ensuring that the final parameter information of the obtained field limiting ring terminal structure can meet the design breakdown voltage requirements, and thus ensuring that the obtained field limiting ring terminal has relatively high device reliability.

[0124] According to some alternative embodiments of the present application, the determining unit includes:

[0125] An obtaining module, configured to obtain a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure according to the plurality of model parameters, where the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing, and the breakdown voltage value of the initial main junction, the second functional relationship represents the relationship between the initial ring spacing and the breakdown voltage value, the third functional relationship represents the relationship between the initial ring spacing and the remaining breakdown voltage value, the remaining breakdown voltage value is the difference between the breakdown voltage value and the breakdown voltage value of the initial field limiting ring, the initial ring spacing is the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships are different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships are different;

[0126] Specifically, the second functional relationship is a function representing the relationship between the initial ring spacing and the breakdown voltage value when the width of the initial field limiting ring is fixed, and the second functional relationship corresponds one-to-one with the width of the initial field limiting ring; the third functional relationship is a relationship representing the relationship between the initial ring spacing and the remaining breakdown voltage value when the width of the initial field limiting ring is fixed, and the third functional relationship corresponds one-to-one with the width of the initial field limiting ring.

[0127] A determining module, configured to determine the original parameter information according to the first functional relationship, the plurality of second functional relationships, the plurality of third functional relationships, and the designed breakdown voltage value of the main junction.

[0128] In this embodiment, according to the first functional relationship, the plurality of second functional relationships, and the plurality of third functional relationships, the original parameter information of the field limiting ring structure can be determined based on the designed breakdown voltage value of the main junction, so as to further make the theoretical breakdown voltage value of the main junction meet the breakdown voltage design value, and further ensure that the main junction of the field limiting ring terminal designed according to the original parameter information can effectively withstand the pressure theoretically when subjected to external pressure, thereby further improving the design accuracy of the field limiting ring structure, and also facilitating subsequent optimization of the performance of the field limiting ring structure by adjusting the original parameter information when the actual breakdown voltage value does not meet the design requirements; and the present application avoids the problems of blind design and trial and error in the design process of the field limiting ring terminal, and improves the overall efficiency of the design of the field limiting ring terminal.

[0129] It should be noted that the first functional relationship characterizes the relationship among the width of the initial field limiting ring, the initial ring spacing, and the breakdown voltage value of the initial main junction, which involves parameters of the physical model, such as material properties, geometric dimensions, etc., and is used to describe the electrical characteristics of the field limiting ring structure; the multiple second functional relationships characterize the relationship between the initial ring spacing and the breakdown voltage value, indicating how the change in the ring spacing affects the breakdown voltage capacity of the main junction; the multiple third functional relationships characterize the relationship between the initial ring spacing and the bearing voltage value of the initial field limiting ring, indicating how the change in the ring spacing affects the bearing voltage capacity of the field limiting ring.

[0130] According to some further optional embodiments of the present application, the determining module includes:

[0131] A first determining sub-module, configured to determine, at least according to the first functional relationship and the designed breakdown voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one-to-one to the field limiting ring widths, and the breakdown voltage ranges that each of the field limiting ring regions needs to satisfy. The breakdown voltage range includes a maximum breakdown voltage value and a minimum breakdown voltage value. The largest of the maximum breakdown voltage values of the plurality of breakdown voltage ranges is not less than the designed breakdown voltage value. The widths of the field limiting rings in the same field limiting ring region are all the field limiting ring widths corresponding to the field limiting ring region, and any two of the field limiting ring widths are different;

[0132] Specifically, the widths of the field limiting rings in the same field limiting ring region are the same, and are all the field limiting ring widths corresponding to the field limiting ring region, while the field limiting ring widths corresponding to different field limiting ring regions are different. The number of the field limiting ring widths is the same as the number of the field limiting ring regions. Through the above steps, the number of the field limiting ring regions, the breakdown voltage ranges of each field limiting ring region, and the widths of each field limiting ring are obtained. Among them, the breakdown voltage range that the field limiting ring region needs to satisfy refers to the breakdown voltage range that the main junction can reach after setting at least one field limiting ring in the field limiting ring region according to the corresponding field limiting ring width.

[0133] A second determining sub-module, configured to sequentially determine, along a first direction, the ring spacings corresponding to the plurality of field limiting rings according to the multiple second functional relationships and the multiple third functional relationships, so that the breakdown voltage values that each of the field limiting ring regions can reach are not less than the corresponding maximum breakdown voltage values, and obtain the original parameter information. The first direction is the direction from the field limiting ring region to the main junction. The ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and the target structure, and the target structure is the field limiting ring or the main junction that is adjacent to the field limiting ring and is located behind the field limiting ring along the first direction.

[0134] Specifically, the third functional relationship corresponds one-to-one with the width of the initial field limiting ring. The breakdown voltage value that the field limiting ring region can reach refers to the breakdown voltage value that the main junction can reach when field limiting rings are arranged in the field limiting ring region according to the ring pitch. The original parameter information may include the number of field limiting ring regions, the width of each field limiting ring, and the ring pitch. The original parameter information may also include the number of field limiting ring regions, the breakdown voltage range of each field limiting ring region, the width of each field limiting ring, and the ring pitch. When multiple field limiting ring regions are located on the left side of the main junction, the first direction is from left to right; when multiple field limiting ring regions are located on the right side of the main junction, the first direction is from right to left. Along the first direction, multiple field limiting rings are respectively the 1st field limiting ring, the 2nd field limiting ring, the 3rd field limiting ring, …… the last field limiting ring. The distance between the 1st field limiting ring and the 2nd field limiting ring is determined in sequence to obtain the ring pitch corresponding to the 1st field limiting ring, the distance between the 2nd field limiting ring and the 3rd field limiting ring is determined to obtain the ring pitch corresponding to the 2nd field limiting ring, ……, the distance between the last field limiting ring and the main junction is determined to obtain the ring pitch corresponding to the last field limiting ring.

[0135] In this embodiment, through the analysis of the first functional relationship and the designed breakdown voltage value, the widths of multiple field limiting rings, the corresponding multiple field limiting ring regions, and the breakdown voltage ranges that each field limiting ring region needs to satisfy are determined, so as to ensure that the maximum breakdown voltage value among multiple breakdown voltage ranges is not less than the designed breakdown voltage value; and according to the second functional relationship and the third functional relationship, the third functional relationship characterizing the relationship between the initial ring pitch and the remaining breakdown voltage value is determined, and through multiple second functional relationships and multiple third functional relationships, the ring pitches corresponding to multiple field limiting rings are determined along the first direction, which can ensure that each field limiting ring region determined according to these ring pitches can reach the corresponding maximum breakdown voltage value, so as to obtain the original parameter information including the number of field limiting ring regions, the width of the field limiting rings in each field limiting ring region, and their corresponding ring pitches, further ensuring that the theoretical breakdown voltage value of the field limiting ring terminal main junction designed according to this original parameter information is not less than the designed breakdown voltage value, thereby further achieving the effect that a field limiting ring terminal that meets the breakdown voltage requirement can be obtained.

[0136] In some further exemplary embodiments of the present application, the second determination sub-module is further configured to:

[0137] The first determination step: When the nth field limiting ring is provided in the mth field limiting ring region and n = 1, determine that the breakdown voltage value that the nth field limiting ring can reach is the minimum breakdown voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is provided in the mth field limiting ring region and n ≠ 1, according to the second functional relationship corresponding to the mth field limiting ring region, determine that the breakdown voltage value that the nth field limiting ring can reach is the breakdown voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the (n - 1)th field limiting ring. Here, m ≥ 1, n ≥ 1, and the (n - 1)th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction.

[0138] Specifically, when the first field limiting ring is provided in the field limiting ring region, the breakdown voltage value that the first field limiting ring can reach is the minimum breakdown voltage value within the breakdown voltage range that the field limiting ring region needs to satisfy. When there are more than one field limiting rings provided in the field limiting ring region, the breakdown voltage value that the nth field limiting ring can reach is the breakdown voltage value corresponding to the case where the initial ring spacing in the second functional relationship is equal to the ring spacing between the (n - 1)th field limiting ring and the nth field limiting ring.

[0139] The second determination step: According to the third functional relationship corresponding to the mth field limiting ring region, determine that the ring spacing corresponding to the nth field limiting ring is the initial ring spacing corresponding to the case where the remaining bearing voltage value is equal to the breakdown voltage value that the nth field limiting ring can reach.

[0140] The third determination step: When the breakdown voltage value that the mth field limiting ring region where the nth field limiting ring is provided can reach is less than the maximum breakdown voltage value corresponding to the mth field limiting ring region, determine that there is still an (n + 1)th field limiting ring in the mth field limiting ring region that is located after the nth field limiting ring along the first direction. Determine the (n + 1)th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and loop to execute the first determination step and the second determination step at least once until the breakdown voltage value that the mth field limiting ring region can reach is not less than the corresponding maximum breakdown voltage value.

[0141] The fourth determination step: When m is less than the number of field limiting ring regions, determine the (m + 1)th field limiting ring region as the new mth field limiting ring region, and loop to execute the first determination step, the second determination step, and the third determination step at least once until m is greater than or equal to the number of field limiting ring regions. The (m + 1)th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

[0142] In the embodiment, the ring spacing between field limit rings in each field limit ring region is determined in sequence along the first direction, so that the breakdown voltage value achievable by the field limit rings arranged according to the ring spacing is not less than the maximum breakdown voltage value corresponding to the field limit ring region, further ensuring that the theoretical breakdown voltage value of the main junction of the field limit ring terminal is not less than the designed breakdown voltage value.

[0143] According to some further optional embodiments of the present application, the first functional relationship includes multiple arrays, each array including the width of the field limit ring, multiple initial ring spacings corresponding to the width of the field limit ring, and multiple breakdown voltage values. The widths of the field limit rings in any two arrays are different. The first determination sub-module is further configured to:

[0144] According to the first functional relationship, screen out the arrays that meet the design objective from the multiple arrays, and determine that the width of the field limit ring in each array that meets the design objective is the width of the field limit ring. The design objective includes that the breakdown voltage value of the main junction is not less than the designed breakdown voltage value, and the area of the field limit ring terminal is not greater than the designed area value;

[0145] Specifically, there are multiple arrays that meet the design objective, and the number of arrays that meet the design objective is the number of field limit ring regions. The width of the field limit rings in the same array is the same. In the same array, the width of the field limit ring corresponds to multiple different initial ring spacings and multiple different breakdown voltage values.

[0146] According to the widths of the multiple field limit rings, determine the number of the field limit ring regions and the relative positional relationship between the multiple field limit ring regions, to obtain the first field limit ring region, the m-th field limit ring region,..., the p-th field limit ring region arranged in sequence along the first direction, where p is the number of field limit ring regions, and 1 ≤ m < p;

[0147] Specifically, the p-th field limit ring region is the field limit ring region closest to the main junction. The relative positional relationship between the multiple field limit ring regions can be determined according to the magnitude relationship between the widths of the multiple field limit rings, and is obtained by arranging the corresponding multiple field limit ring regions in ascending order of the widths of the multiple field limit rings along the first direction, that is, the widths of the field limit rings corresponding to the first field limit ring region, the m-th field limit ring region,..., the p-th field limit ring region are getting larger and larger.

[0148] Determine the maximum breakdown voltage corresponding to the p-th field limit ring region as the designed breakdown voltage. According to the breakdown voltages corresponding to the first field limit ring width, determine the minimum breakdown voltage corresponding to the p-th field limit ring region as the minimum value among the breakdown voltages corresponding to the first field limit ring width, so as to obtain the breakdown voltage range corresponding to the p-th field limit ring region. The first field limit ring width is the field limit ring width corresponding to the p-th field limit ring region;

[0149] Specifically, the maximum breakdown voltage of the p-th field limit ring region closest to the main junction is the designed breakdown voltage of the main junction; the minimum breakdown voltage of the p-th field limit ring region is the minimum value among the breakdown voltages in the array where the first field limit ring width is located.

[0150] Determine the maximum breakdown voltage corresponding to the m-th field limit ring region as the minimum breakdown voltage corresponding to the (m + 1)-th field limit ring region. According to the breakdown voltages corresponding to the second field limit ring width, determine the minimum breakdown voltage corresponding to the m-th field limit ring region as the minimum value among the breakdown voltages corresponding to the second field limit ring width, so as to obtain the breakdown voltage range corresponding to the m-th field limit ring region. The second field limit ring width is the field limit ring width corresponding to the m-th field limit ring region.

[0151] In the embodiment, an array that meets the designed area value and the designed breakdown voltage is screened out from an array including the width of the field limit ring, multiple initial ring spacings, and multiple breakdown voltages. Then, according to the screened array, the breakdown voltage range and the field limit ring width of each field limit ring region in the field limit ring terminal are determined. In this way, the original parameter information of the field limit ring terminal that takes into account miniaturization and high resistivity can be obtained quickly and efficiently, thereby further ensuring a relatively high parameter determination efficiency and accuracy of the field limit ring terminal.

[0152] According to some other alternative embodiments of the present application, the computing unit includes: an adding module, configured to add at least one new field limiting ring in the field limiting ring terminal when the difference is greater than a preset threshold, so as to obtain an adjusted field limiting ring terminal, such that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; an adjusting module, configured to adjust the distance between at least some of the field limiting rings when the difference is not greater than the preset threshold, so as to obtain an adjusted field limiting ring terminal, such that the difference corresponding to the adjusted field limiting ring terminal meets the design requirements. In the embodiment, when the difference is greater than the preset threshold, it indicates that the actual breakdown voltage is much smaller than the designed breakdown voltage. At this time, the original parameter information is adjusted by adding field limiting rings, so that the actual breakdown voltage can be rapidly increased. When the difference is less than or equal to the preset threshold, it indicates that the actual breakdown voltage is close to the designed breakdown voltage. At this time, the original parameter information is adjusted by adjusting the ring spacing between the field limiting rings, which can achieve a precise adjustment of the actual breakdown voltage. While further ensuring that the parameter information of the adjusted field limiting ring terminal meets the breakdown voltage design requirements, it further ensures that the parameter information of the finally obtained field limiting ring terminal meets the miniaturization requirements. In this embodiment, according to the magnitude relationship between the difference and the preset threshold, the original parameter information of the field limiting ring terminal is adjusted in two stages, such that the difference determined by the adjusted parameter information meets the design requirements. This not only ensures a relatively high design efficiency of the field limiting ring terminal, but also further ensures that a field limiting ring terminal that meets the designed breakdown voltage requirements and miniaturization requirements can be obtained.

[0153] In some other exemplary embodiments of the present application, the increasing module includes: a setting sub-module, configured to, when the difference is greater than the preset threshold, adjust the structure of the field limit ring terminal according to the adjustment principle of successively setting new field limit rings in the first direction between the main junction and the first field limit ring (hereinafter referred to as Rule A), until the difference corresponding to the adjusted field limit ring terminal is not greater than the preset threshold. Wherein, the distance between the new field limit ring farthest from the main junction in the final parameter information and the first field limit ring is equal to the distance between the first field limit ring and the main junction in the parameter information, the first field limit ring is the field limit ring closest to the main junction in the original parameter information, the width of the new field limit ring is determined according to the width of the first field limit ring, and the ring pitch corresponding to the new field limit ring is determined according to the minimum line width achievable by the process. In this embodiment, when the actual breakdown voltage is much smaller than the designed breakdown voltage, starting from the side of the first field limit ring close to the main junction, new field limit rings are successively added in the first direction pointing from the field limit ring area to the main junction until the difference is less than or equal to the preset threshold, which further ensures that the actual breakdown voltage can be quickly increased to be close to or greater than the designed breakdown voltage, thereby further improving the design efficiency of the field limit ring terminal.

[0154] Further, the width of the new field limit ring is the same as the width of the first field limit ring, and the ring pitch corresponding to the new field limit ring is the minimum line width achievable by the process.

[0155] In some other exemplary embodiments of the present application, the increasing module includes: an adjustment sub-module, configured to, when the difference is not greater than the preset threshold, adjust the structure of the field limit ring terminal according to at least one of the following adjustment principles (hereinafter referred to as Rule B) until the difference corresponding to the adjusted field limit ring terminal meets the design requirements: starting from the field limit ring area farthest from the main junction, gradually adjust the distance between two adjacent field limit rings located in different field limit ring areas in the first direction, where the first direction is the direction from the field limit ring area to the main junction; starting from the new field limit ring farthest from the main junction, gradually adjust the ring pitch corresponding to the new field limit ring in the first direction. In this embodiment, when the actual breakdown voltage is close to the designed breakdown voltage, starting from the field limit ring area farthest from the main junction, gradually adjust the distance between adjacent field limit ring areas in the first direction, and / or starting from the new field limit ring farthest from the main junction, gradually adjust the distance between adjacent new field limit rings in the first direction until the difference meets the design requirements, which further ensures that the parameter information of the adjusted field limit ring terminal meets the breakdown voltage design requirements, and at the same time further ensures that the parameter information of the finally obtained field limit ring terminal meets the miniaturization requirements, and further achieves the effect of designing a field limit ring terminal that takes into account both miniaturization and high blocking performance.

[0156] The above embodiments can ensure that the structure of the field limiting ring terminal meets the design requirements. Even when the difference is not greater than a preset threshold, fine adjustment can be carried out. By gradually adjusting the distance between the field limiting rings and the ring spacing, the structure of the field limiting ring terminal can be effectively optimized, ensuring its performance and stability within the design requirements, and enabling reasonable adjustment of the field limiting ring terminal according to the actual situation to meet the design requirements.

[0157] It should be noted that the technical personnel of the present application can determine the specific values of the number of the field limiting ring regions, the corresponding widths of the field limiting rings, and the ring spacing corresponding to the field limiting rings therein according to the actual needs and the solutions of the present application.

[0158] Exemplarily, the obtaining unit includes: a building module for building a plurality of the physical models; a calculating module for performing simulation calculations on the plurality of the physical models to obtain the initial ring spacing, breakdown voltage value, and bearing voltage value corresponding to the widths of the plurality of the initial field limiting rings. In this embodiment, by building a plurality of physical models and performing simulation calculations on them, the initial ring spacing, breakdown voltage values, and bearing voltage values corresponding to the widths of the initial field limiting rings can be obtained more accurately, providing more accurate data support for establishing a functional relationship representing the corresponding relationship between these model parameters subsequently.

[0159] In some alternative solutions of the present application, the obtaining module includes: a first fitting sub-module for fitting the widths of the plurality of the initial field limiting rings, the corresponding initial ring spacing, and the breakdown voltage value by using the data fitting method to obtain the first functional relationship; a second fitting sub-module for fitting the plurality of the initial ring spacing and the breakdown voltage value corresponding to the width of each of the initial field limiting rings by using the data fitting method to obtain the second functional relationship corresponding to the width of each of the initial field limiting rings; a third fitting sub-module for fitting the plurality of the initial ring spacing and the remaining bearing voltage value corresponding to the width of each of the initial field limiting rings by using the data fitting method to obtain the third functional relationship corresponding to the width of each of the initial field limiting rings, where the remaining bearing voltage value is the difference between the breakdown voltage value and the bearing voltage value of the initial field limiting ring. By using the data fitting method to establish the first functional relationship, the second functional relationship, and the third functional relationship, it is convenient to perform data prediction, analysis, and optimization according to these functional relationships subsequently.

[0160] Those skilled in the art can select any suitable data fitting method to process the model parameters, so as to obtain the first functional relationship, the second functional relationship, and the third functional relationship. Optionally, the data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multiple linear regression, and exponential function fitting.

[0161] In the embodiment, the data fitting method can determine the values of the model parameters, so that the model can better fit the actual data. Different data fitting methods can select appropriate fitting functions according to the characteristics of the data and the form of the model, and then obtain more accurate parameter estimation results. For example, polynomial fitting is suitable for approximating complex non-linear relationships, Gaussian fitting is suitable for data with obvious Gaussian distribution characteristics, multiple linear regression is suitable for the influence of multiple independent variables on the dependent variable, and exponential function fitting is suitable for data showing exponential growth or decay. The parameters determined by the data fitting method can be used to establish a more accurate model, so as to better describe and predict the actual data.

[0162] The parameter determination device of the field limiting ring terminal includes a processor and a memory. The acquisition unit, the determination module, the calculation module, etc. are all stored in the memory as program units, and the corresponding functions are implemented by the processor executing the program units stored in the memory. All the modules are located in the same processor; or, the respective modules are located in different processors in any combined form.

[0163] The processor contains a kernel, and the kernel retrieves the corresponding program units from the memory. One or more kernels can be set, and by adjusting the kernel parameters, at least the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the breakdown voltage requirement can be solved.

[0164] The memory may include non-permanent memory in a computer-readable medium, in the form of random access memory (RAM) and / or non-volatile memory, such as read-only memory (ROM) or flash RAM, and the memory includes at least one memory chip.

[0165] The embodiment of the present application also provides a preparation method for a field limiting ring terminal, including: determining the parameters of the field limiting ring terminal by using any one of the parameter determination methods of the field limiting ring terminal; preparing the field limiting ring terminal according to the parameters of the field limiting ring terminal.

[0166] In the method for preparing the field limiting ring terminal, first, the parameters of the field limiting ring terminal are determined by using the parameter determination method. This determination method first obtains the physical model parameters of multiple field limiting ring structures with different ring widths of the field limiting ring, and then determines the original parameter information of the field limiting ring terminal including the ring width and the ring spacing according to the multiple model parameters, so that the theoretical breakdown voltage of the main junction of the field limiting ring terminal is not less than the designed breakdown voltage; finally, the field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual breakdown voltage value of the field limiting ring terminal. When the difference between the designed breakdown voltage value and the actual breakdown voltage value does not meet the design requirements, the original parameter information is adjusted to make the difference meet the design requirements, so as to obtain the final parameter information of the field limiting ring terminal, solving the problem in the prior art that it is difficult to design a field limiting ring terminal that meets the breakdown voltage requirements, ensuring that the final parameter information of the obtained field limiting ring terminal structure can meet the design breakdown voltage requirements, and then preparing the field limiting ring terminal according to the determined parameters, ensuring that the obtained field limiting ring terminal has high device reliability.

[0167] An embodiment of the present invention provides a computer-readable storage medium, and the computer-readable storage medium includes a stored program. When the program runs, it controls the device where the computer-readable storage medium is located to execute the parameter determination method of the field limiting ring terminal.

[0168] An embodiment of the present invention provides a processor, and the processor is used to run a program. When the program runs, it executes the parameter determination method of the field limiting ring terminal.

[0169] An embodiment of the present invention provides a device, which includes a processor, a memory, and a program stored on the memory and executable on the processor. When the processor executes the program, it implements the step program of the parameter determination method of the field limiting ring terminal.

[0170] The device in this article can be a server, a PC, a PAD, a mobile phone, etc.

[0171] This application also provides a computer program product, which includes computer instructions. When the computer instructions are executed by a processor, they at least implement the step program of the parameter determination method of the field limiting ring terminal.

[0172] Obviously, those skilled in the art should understand that each module or step of the present invention can be implemented by a general-purpose computing device. They can be concentrated on a single computing device or distributed over a network composed of multiple computing devices. They can be implemented by program codes executable by the computing device. Thus, they can be stored in a storage device and executed by the computing device. And in some cases, the steps shown or described can be executed in a different order from here, or they can be separately made into individual integrated circuit modules, or multiple modules or steps among them can be made into a single integrated circuit module for implementation. In this way, the present invention is not limited to any specific combination of hardware and software.

[0173] Those skilled in the art should understand that the embodiments of the present application can be provided as a method, a system, or a computer program product. Therefore, the present application can take the form of a complete hardware embodiment, a complete software embodiment, or an embodiment combining software and hardware aspects. Moreover, the present application can take the form of a computer program product implemented on one or more computer-usable storage media (including but not limited to disk storage, CD-ROM, optical storage, etc.) containing computer-usable program codes.

[0174] The present application is described with reference to the flowcharts and / or block diagrams of methods, devices (systems), and computer program products according to the embodiments of the present application. It should be understood that each flow and / or block in the flowchart and / or block diagram, as well as the combination of flows and / or blocks in the flowchart and / or block diagram, can be implemented by computer program instructions. These computer program instructions can be provided to the processor of a general-purpose computer, a special-purpose computer, an embedded processor, or other programmable data processing devices to generate a machine, such that the instructions executed by the processor of the computer or other programmable data processing devices generate a device for implementing the functions specified in Figure 1 one or more flows and / or blocks Figure 1 one or more blocks.

[0175] These computer program instructions can also be stored in a computer-readable memory that can direct a computer or other programmable data processing device to work in a specific manner, such that the instructions stored in the computer-readable memory generate a manufactured article including an instruction device that implements the functions specified in Figure 1 one or more flows and / or blocks Figure 1 one or more blocks.

[0176] These computer program instructions can also be loaded onto a computer or other programmable data processing device, such that a series of operation steps are executed on the computer or other programmable device to generate a computer-implemented process. Thus, the instructions executed on the computer or other programmable device provide for implementing the functions in the processFigure 1 One or more processes and / or boxes Figure 1 Steps of functions specified in one box or more boxes.

[0177] In a typical configuration, a computing device includes one or more processors (CPUs), an input / output interface, a network interface, and memory.

[0178] The memory may include non-permanent memory in the form of computer-readable media, random access memory (RAM) and / or non-volatile memory such as read-only memory (ROM) or flash memory (flash RAM). The memory is an example of computer-readable media.

[0179] Computer-readable media includes permanent and non-permanent, removable and non-removable media and can be implemented by any method or technology for information storage. The information can be computer-readable instructions, data structures, program modules, or other data. Examples of computer storage media include, but are not limited to, phase change memory (PRAM), static random access memory (SRAM), dynamic random access memory (DRAM), other types of random access memory (RAM), read-only memory (ROM), electrically erasable programmable read-only memory (EEPROM), flash memory or other memory technologies, compact disc read-only memory (CD-ROM), digital versatile disc (DVD) or other optical storage, magnetic cassettes, magnetic tape disk storage or other magnetic storage devices, or any other non-transitory media that can be used to store information accessible by a computing device. As defined herein, computer-readable media does not include transitory media such as modulated data signals and carrier waves.

[0180] It should also be noted that the term "comprises", "comprising" or any other variation thereof is intended to cover a non-exclusive inclusion, such that a process, method, commodity or device comprising a series of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, commodity or device. Without further limitation, an element defined by the statement "comprising a..." does not exclude the presence of additional identical elements in the process, method, commodity or device comprising the element.

[0181] The above description is only a preferred embodiment of the present application and is not intended to limit the present application. For those skilled in the art, the present application can have various changes and modifications. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A method for determining parameters of a field limiting loop terminal, characterized in that: include: Acquiring model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and the initial field limiting rings corresponding to different field limiting ring structures have different widths; Determine original parameter information according to the plurality of model parameters and the designed withstand voltage value of the main junction, the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal includes the main junction and a plurality of field limiting ring regions located on one side of the main junction, the original parameter information includes the width of the field limiting ring in each of the field limiting ring regions and the ring spacing between adjacent field limiting rings; The field limiting ring terminal is simulated and calculated according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, the original parameter information is adjusted so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

2. The method according to claim 1, characterized in that According to the plurality of model parameters and the designed withstand voltage value of the main junction, original parameter information is determined, including: According to the plurality of model parameters, a first functional relationship, a plurality of second functional relationships and a plurality of third functional relationships of the field limiting ring structure are obtained, wherein the first functional relationship represents the relationship between the width of the initial field limiting ring, the initial ring spacing and the withstand voltage value of the initial main junction, the second functional relationship represents the relationship between the initial ring spacing and the withstand voltage value, the third functional relationship represents the relationship between the initial ring spacing and the residual pressure bearing value, the residual pressure bearing value is the difference between the withstand voltage value and the pressure bearing value of the initial field limiting ring, the initial ring spacing is the distance between the initial field limiting ring and the initial main junction, the widths of the initial field limiting rings corresponding to any two of the second functional relationships are different, and the widths of the initial field limiting rings corresponding to any two of the third functional relationships are different; The original parameter information is determined according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of a main junction.

3. The method according to claim 2, characterized in that Determining the original parameter information according to the first functional relationship, a plurality of the second functional relationships, a plurality of the third functional relationships, and a designed withstand voltage value of the main junction includes: At least according to the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding to the field limiting ring widths one by one, and a withstand voltage range that each field limiting ring region needs to satisfy are determined, the withstand voltage range includes a maximum withstand voltage value and a minimum withstand voltage value, the maximum of the maximum withstand voltage values ​​of the plurality of withstand voltage ranges is not less than the designed withstand voltage value, the widths of the field limiting rings in the same field limiting ring region are all the field limiting ring width corresponding to the field limiting ring region, and the widths of any two field limiting rings are different; According to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are determined in sequence along the first direction, so that the withstand voltage value that can be achieved in each field limiting ring region is not less than the corresponding maximum withstand voltage value, and the original parameter information is obtained, the first direction is the direction from the field limiting ring region to the main junction, the ring spacing corresponding to the field limiting ring is the distance between the field limiting ring and a target structure, and the target structure is the field limiting ring or the main junction adjacent to the field limiting ring and located after the field limiting ring along the first direction.

4. The method according to claim 3, characterized in that According to the plurality of the second functional relationships and the plurality of the third functional relationships, the ring spacings corresponding to the plurality of the field limiting rings are sequentially determined along the first direction, so that the withstand voltage value that can be achieved by each of the field limiting ring regions is not less than the corresponding maximum withstand voltage value, including: A first determining step, when the nth field limiting ring is arranged in the mth field limiting ring region and n=1, determining that the withstand voltage value that the nth field limiting ring can reach is the minimum withstand voltage value corresponding to the mth field limiting ring region; when the nth field limiting ring is arranged in the mth field limiting ring region and n≠1, determining, according to the second functional relationship corresponding to the mth field limiting ring region, that the withstand voltage value that the nth field limiting ring can reach is the withstand voltage value corresponding to the case where the initial ring spacing is equal to the ring spacing corresponding to the n-1th field limiting ring, m≥1, n≥1, and the n-1th field limiting ring is the field limiting ring located before the nth field limiting ring along the first direction; A second determination step, according to the third functional relationship corresponding to the mth field limiting ring area, determining the ring spacing corresponding to the nth field limiting ring as the initial ring spacing corresponding to the case where the residual pressure value is equal to the withstand voltage value that the nth field limiting ring can reach; A third determining step, in the case where the withstand voltage value that can be reached by the mth field limiting ring region provided with the nth field limiting ring is less than the maximum withstand voltage value corresponding to the mth field limiting ring region, determining that there is also an n+1th field limiting ring located after the nth field limiting ring along the first direction in the mth field limiting ring region, determining the n+1th field limiting ring as the new nth field limiting ring in the mth field limiting ring region, and cyclically executing the first determining step and the second determining step at least once until the withstand voltage value that can be reached by the mth field limiting ring region is not less than the corresponding maximum withstand voltage value; A fourth determination step, when m is less than the number of the field limiting ring regions, determining the m+1th field limiting ring region as the new mth field limiting ring region, and cyclically executing the first determination step, the second determination step and the third determination step at least once, until m is greater than or equal to the number of the field limiting ring regions, and the m+1th field limiting ring region is the field limiting ring region located after the mth field limiting ring region along the first direction.

5. The method according to claim 3, characterized in that: The first functional relationship includes a plurality of arrays, each of the arrays includes the width of the field limiting ring, a plurality of initial ring spacings corresponding to the width of the field limiting ring, and a plurality of the withstand voltage values, the widths of the field limiting rings in any two of the arrays are different, and based at least on the first functional relationship and the designed withstand voltage value, a plurality of field limiting ring widths, a plurality of field limiting ring regions corresponding one-to-one to the field limiting ring widths, and a withstand voltage range that each field limiting ring region needs to meet are determined, including: According to the first functional relationship, an array that meets a design goal is selected from the plurality of arrays, and the width of the field limiting ring in each array that meets the design goal is determined to be the field limiting ring width, wherein the design goal includes that the withstand voltage value of the main junction is not less than the designed withstand voltage value, and the area of ​​the field limiting ring terminal is not greater than the designed area value; According to the widths of the plurality of field limiting rings, the number of the field limiting ring regions and the relative positional relationship between the plurality of field limiting ring regions are determined to obtain the first field limiting ring region, the mth field limiting ring region, ..., the pth field limiting ring region arranged in sequence along the first direction, where p is the number of the field limiting ring regions, and 1≤m<p; Determine that the maximum withstand voltage value corresponding to the p-th field limiting ring region is the designed withstand voltage value, and determine that the minimum withstand voltage value corresponding to the p-th field limiting ring region is the minimum value among the multiple withstand voltage values ​​corresponding to the first field limiting ring width according to the multiple withstand voltage values ​​corresponding to the first field limiting ring width, so as to obtain the withstand voltage range corresponding to the p-th field limiting ring region, wherein the first field limiting ring width is the field limiting ring width corresponding to the p-th field limiting ring region; Determine that the maximum withstand voltage value corresponding to the mth field limiting ring area is the minimum withstand voltage value corresponding to the m+1th field limiting ring area, and determine that the minimum withstand voltage value corresponding to the mth field limiting ring area is the minimum value among the multiple withstand voltage values ​​corresponding to the second field limiting ring width according to the multiple withstand voltage values ​​corresponding to the second field limiting ring width, so as to obtain the withstand voltage range corresponding to the mth field limiting ring area, and the second field limiting ring width is the field limiting ring width corresponding to the mth field limiting ring area.

6. The method according to any one of claims 1 to 5, characterized in that Adjusting the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirement includes: In the case where the difference is greater than the preset threshold, at least one new field limiting ring is added to the field limiting ring terminal, so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, and the parameter information of the adjusted field limiting ring terminal that is not greater than the preset threshold is the final parameter information; When the difference is not greater than the preset threshold, the distance between at least part of the field limiting rings is adjusted so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement.

7. The method according to claim 6, characterized in that When the difference is greater than a preset threshold, at least one new field limiting ring is added to the field limiting ring terminal so that the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, including: When the difference is greater than the preset threshold, the structure of the field limiting ring terminal is adjusted by adopting an adjustment principle of setting new field limiting rings one by one along the first direction between the main junction and the first field limiting ring until the difference corresponding to the adjusted field limiting ring terminal is not greater than the preset threshold, Among them, the distance between the new field limiting ring farthest from the main junction in the final parameter information and the first field limiting ring is equal to the distance between the first field limiting ring and the main junction in the parameter information, the first field limiting ring is the field limiting ring closest to the main junction in the original parameter information, the width of the new field limiting ring is determined according to the width of the first field limiting ring, the ring spacing corresponding to the new field limiting ring is determined according to the minimum line width achievable by the process, and the first direction is the direction from the field limiting ring area to the main junction.

8. The method according to claim 6, characterized in that When the difference is not greater than the preset threshold, adjusting the distance between at least part of the field limiting rings so that the difference corresponding to the adjusted field limiting ring terminal meets the design requirement, including: When the difference is not greater than the preset threshold, at least one of the following adjustment principles is adopted to adjust the structure of the field limiting ring terminal until the difference corresponding to the adjusted field limiting ring terminal meets the design requirement: Starting from the field limiting ring region farthest from the main junction, gradually adjusting the distance between two adjacent field limiting rings located in different field limiting ring regions along a first direction, wherein the first direction is a direction from the field limiting ring region to the main junction; Starting from the new field limiting ring farthest from the main junction, the ring spacing corresponding to the new field limiting ring is gradually adjusted along the first direction.

9. The method according to any one of claims 1 to 5, characterized in that Obtain model parameters of the physical model of multiple field limiting ring structures, including: Establishing a plurality of said physical models; Simulation calculations are performed on the multiple physical models to obtain initial ring spacings, withstand voltage values, and pressure-bearing values ​​corresponding to the widths of the multiple initial field limiting rings.

10. The method according to claim 9, characterized in that According to the plurality of model parameters, obtaining a first functional relationship, a plurality of second functional relationships, and a plurality of third functional relationships of the field limiting ring structure comprises: Using a data fitting method to fit the widths of a plurality of the initial field limiting rings, the corresponding initial ring spacings, and the withstand voltage value, to obtain the first functional relationship; Using a data fitting method to fit a plurality of the initial ring spacings and the withstand voltage values ​​corresponding to the width of each initial field limiting ring, to obtain the second functional relationship corresponding to the width of each initial field limiting ring; A data fitting method is used to fit multiple initial ring spacings and residual pressure values ​​corresponding to the width of each initial field limiting ring to obtain the third functional relationship corresponding to the width of each initial field limiting ring. The residual pressure value is the difference between the withstand voltage value and the pressure value of the initial field limiting ring.

11. The method according to claim 10, characterized in that The data fitting method includes at least one of the following: polynomial fitting, Gaussian fitting, multivariate linear regression, and exponential function fitting.

12. A method for preparing a field limiting ring terminal, characterized in that: include: Determine the parameters of the field limiting loop terminal using the method for determining the parameters of the field limiting loop terminal according to any one of claims 1 to 11; The field limiting ring terminal is prepared according to the parameters of the field limiting ring terminal.

13. A parameter determination device for a field limiting loop terminal, characterized in that: include: an acquisition unit, used to acquire model parameters of a physical model of a plurality of field limiting ring structures, wherein the field limiting ring structure comprises an initial main junction and an initial field limiting ring located at one side of the initial main junction, and different field limiting ring structures correspond to different initial field limiting ring widths; a determining unit, configured to determine original parameter information according to a plurality of the model parameters and a designed withstand voltage value of the main junction, wherein the original parameter information is parameter information of the field limiting ring terminal, the field limiting ring terminal comprising the main junction and a plurality of field limiting ring regions located on one side of the main junction, and the original parameter information comprising a width of a field limiting ring in each of the field limiting ring regions and a ring spacing between adjacent field limiting rings; A calculation unit is used to perform simulation calculation on the field limiting ring terminal according to the original parameter information to obtain the actual withstand voltage value of the main junction, and when the difference between the design withstand voltage value and the actual withstand voltage value does not meet the design requirements, adjust the original parameter information so that the difference corresponding to the adjusted parameter information meets the design requirements, thereby obtaining the final parameter information.

14. A computer-readable storage medium, characterized in that: The computer-readable storage medium includes a stored program, wherein when the program is executed, the device where the computer-readable storage medium is located is controlled to execute the method according to any one of claims 1 to 11.

15. An electronic device, characterized in that: include: One or more processors, a memory, and one or more programs, wherein the one or more programs are stored in the memory and are configured to be executed by the one or more processors, and the one or more programs include methods for executing any one of claims 1 to 11.

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