Display device

By adopting a structure in which a protective layer containing organic materials is used in the display device and a structure in which a plurality of grooves are provided in the non-display area, the challenges of the existing display device in preventing external light reflection and improving the reliability of the display area are solved, and the improvement of efficient optical performance and durability is achieved.

CN119584746APending Publication Date: 2025-03-07SAMSUNG DISPLAY CO LTD
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Patent Information

Application Number
CN202411233156.4
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-09-04
Filing Date
2024-09-04
Publication Date
2025-03-07

AI Technical Summary

Technical Problem

Existing display devices have challenges in achieving efficient optical performance and durability, especially in preventing external light reflections and improving the reliability of the display area.

Method used

A structure including a substrate, a display element layer, a packaging layer, a color conversion-transmissive layer, a color filter layer and a protective layer are adopted. The protective layer contains organic material and a plurality of grooves are provided in the non-display area to reduce tensile strength and prevent film from peeling off.

Benefits of technology

With this structure, the display device can effectively reduce the reflection of external light, improve the color purity of light, and enhance the reliability of the display area, so as to avoid defects caused by film peeling.

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Abstract

A display device includes: a substrate including a display area and a non-display area surrounding the display area; a display element layer disposed on the substrate and including at least one display element; an encapsulation layer disposed on the display element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion-transmission layer disposed on the encapsulation layer and configured to convert light emitted from the at least one display element into light of another color; a color filter layer disposed on the color conversion-transmission layer; and a protective layer disposed on the color filter layer and extending from the display area to the non-display area, in which the protective layer includes a plurality of grooves in the non-display area.
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Description

[0001] CROSS-REFERENCE TO RELATED APPLICATIONS

[0002] This application claims the priority of Korean Patent Application No. 10-2023-0117222 filed in the Korean Intellectual Property Office on September 4, 2023, the entire contents of which are incorporated herein by reference. Technical Field

[0003] One or more embodiments relate to a display device. Background Art

[0004] Due to rapid development in the field of display technology for visually expressing various types of electrical signal information, various display devices having excellent characteristics such as reduced thickness, low weight, and low power consumption have been introduced.

[0005] The display device may include a liquid crystal display device that uses light from a backlight instead of autonomously emitting light or a light-emitting display device including a display element configured to emit light. The light-emitting display device may include a display element including an emission layer. Summary of the invention

[0006] One or more embodiments provide a reliable display device.However, the above technical objectives are only examples, and the scope of the present disclosure is not limited thereto.

[0007] Additional aspects will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the presented embodiments of the disclosure.

[0008] According to one or more embodiments, a display device may include: a substrate including a display area and a non-display area surrounding the display area; a display element layer disposed on the substrate and including at least one display element; an encapsulation layer disposed on the display element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion-transmission layer disposed on the encapsulation layer and configured to convert light emitted from the at least one display element into light of another color; a color filter layer disposed on the color conversion-transmission layer; and a protective layer disposed on the color filter layer and extending from the display area to the non-display area, wherein the protective layer may include a plurality of first grooves in the non-display area.

[0009] The bottom surface of the protection layer may include a concave surface corresponding to the convex surface included in the top surface of the color filter layer.

[0010] The protection layer may be in direct contact with the color filter layer, and may cover an edge of the color filter layer.

[0011] The plurality of first grooves may expose at least a portion of a top surface of the color filter layer.

[0012] A central width of each of the plurality of first grooves may be in a range of about 1 μm to about 100 μm.

[0013] The protective layer may include an organic material.

[0014] The thickness of the protective layer may be sufficient to cover the color filter layer.

[0015] The thickness of the protective layer may be in the range of about 3 μm to about 8 μm.

[0016] The display device may further include a sub-covering layer directly contacting the protection layer and overlapping the plurality of first grooves.

[0017] The display device may further include a first bank layer disposed on the substrate, the first bank layer including an opening for defining an emission region of the at least one display element, and the protective layer further includes a plurality of second grooves disposed in the display region and overlapping with the first bank layer in a plan view.

[0018] The color conversion-transmission layer may include: a color converter including a plurality of quantum dots; and a second bank layer surrounding the color converter, and the plurality of second grooves may overlap the second bank layer in a plan view.

[0019] The color filter layer may include: a first color filter configured to transmit light of a first color; a second color filter configured to transmit light of a second color; a third color filter configured to transmit light of a third color; and a light blocking portion separating the first color filter, the second color filter and the third color filter, the light blocking portion may include at least two overlapping color layers selected from the first color layer, the second color layer and the third color layer, and the first color layer, the second color layer and the third color layer may respectively include the same material as the first color filter, the second color filter and the third color filter.

[0020] The encapsulation layer may include a first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer sequentially stacked on one another, and the color conversion-transmission layer may be in direct contact with the second inorganic encapsulation layer.

[0021] According to one or more embodiments, a display device may include: a substrate including a display area and a non-display area surrounding the display area; a display element layer disposed on the substrate and including at least one display element; an encapsulation layer disposed on the display element layer and including at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color filter layer disposed on the encapsulation layer and including a first color filter configured to transmit light of a first color, a second color filter configured to transmit light of a second color, a third color filter configured to transmit light of a third color, and a light blocking portion separating the first color filter, the second color filter, and the third color filter; and a protective layer composed of an organic material and disposed on the color filter layer to cover an edge of the color filter layer, wherein the protective layer may include a plurality of grooves.

[0022] A center width of each of the plurality of grooves may be in a range of about 1 μm to about 100 μm, and the plurality of grooves may expose at least a portion of a top surface of the color filter layer.

[0023] The plurality of grooves may include a plurality of first grooves in the non-display area and a plurality of second grooves in the display area at least partially overlapping the light blocking portion.

[0024] The light blocking portion may include first, second, and third color layers overlapping each other, and the first, second, and third color layers may include the same materials as those of the first, second, and third color filters, respectively.

[0025] The bottom surface of the protection layer may include a concave surface corresponding to the convex surface included in the top surface of the color filter layer.

[0026] The thickness of the protective layer may be in the range of about 3 μm to about 8 μm.

[0027] The display device may further include a sub-covering layer extending from the display area to the non-display area, and the sub-covering layer may be disposed in the plurality of grooves.

[0028] The above and other aspects, features and advantages will become more fully apparent from the following description, claims and accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0029] The above and other aspects, features and advantages of some embodiments of the present disclosure will become more apparent from the following description in conjunction with the accompanying drawings, in which:

[0030] Figure 1 is a perspective view schematically showing a display device according to an embodiment;

[0031] Figure 2 is a schematic cross-sectional view schematically showing a display device according to an embodiment;

[0032] Figure 3 Shows Figure 2 The optical layer of the color conversion-transmission layer shown in FIG.

[0033] Figure 4 is a schematic diagram of an equivalent circuit of a sub-pixel provided in a display device according to an embodiment;

[0034] Figure 5 is a schematic cross-sectional view schematically showing a part of a display area of ​​a display device according to an embodiment;

[0035] Fig. 6A and Figure 6B are a schematic cross-sectional view and a plan view schematically showing a portion of a non-display area of ​​a display device according to an embodiment, respectively;

[0036] Fig. 7A and Figure 7B is a schematic cross-sectional view schematically showing a portion of a non-display area of ​​a display device according to an embodiment;

[0037] Figure 8 is a schematic cross-sectional view schematically showing a portion of a non-display area of ​​a display device according to an embodiment; and

[0038] Fig. 9A and Fig. 9B 1 and 2 are respectively a schematic cross-sectional view and a plan view schematically showing a part of a display area of ​​a display device according to an embodiment. DETAILED DESCRIPTION

[0039] In the following description, for the purpose of explanation, many specific details are set forth to provide a thorough understanding of various embodiments or implementations of the present invention. As used herein, "embodiment" and "implementation" are interchangeable words, which are non-limiting examples of the devices or methods disclosed herein. However, it is apparent that various embodiments can be implemented without these specific details or with one or more equivalent arrangements. Here, various embodiments are not necessarily exclusive and do not limit the present disclosure. For example, the specific shapes, configurations, and characteristics of an embodiment can be used or implemented in another embodiment.

[0040] Unless otherwise specified, the illustrated embodiments should be understood to provide features of the present invention. Therefore, unless otherwise specified, the features, components, modules, layers, films, panels, regions and / or aspects of various embodiments, etc. (hereinafter individually or collectively referred to as "elements") can be combined, separated, interchanged and / or rearranged in other ways without departing from the present invention.

[0041] The use of cross hatching and / or shading in the drawings is generally provided to clarify the boundaries between adjacent elements. Therefore, unless otherwise specified, the presence or absence of cross hatching or shading does not convey or indicate any preference or demand for a particular material, material property, size, ratio, commonality between the elements shown and / or any other features, attributes, properties, etc. of the elements. Further, in the drawings, the size and relative size of the elements may be exaggerated for clarity and / or descriptive purposes. When the embodiments can be implemented differently, a specific process sequence may be performed differently from the described sequence. For example, two processes described in succession may be performed substantially simultaneously, or in an order opposite to the described sequence. Similarly, the same reference numerals and / or reference characters represent the same elements.

[0042] When an element or layer is referred to as being "on" another element or layer, "connected to" or "coupled to" another element or layer, the element or layer may be directly on, directly connected to or coupled to the other element or layer, or there may be an intervening element or layer. However, when an element or layer is referred to as being "directly on" another element or layer, "directly connected to" or "directly coupled to" another element or layer, there are no intervening elements or layers. For this reason, the term "connected" may refer to a physical connection, an electrical connection, and / or a fluid connection with or without an intervening element. In addition, the x-direction, the y-direction, and the z-direction are not limited to directions corresponding to the three axes (e.g., the x-axis, the y-axis, and the z-axis) of a rectangular coordinate system, and may be interpreted in a broader sense. For example, the x-direction, the y-direction, and the z-direction may be perpendicular to each other, or may represent different directions that are not perpendicular to each other.

[0043] For the purpose of this disclosure, "at least one of A and B" may be interpreted as only A, only B, or any combination of A and B. In addition, "at least one of X, Y, and Z" and "at least one selected from the group consisting of X, Y, and Z" may be understood as only X, only Y, only Z, or any combination of two or more of X, Y, and Z. As used herein, the term "and / or" includes any and all combinations of one or more of the associated listed items.

[0044] Although the terms "first", "second", etc. can be used to describe various types of elements in this article, these elements should not be limited by these terms. These terms are used to distinguish one element from another element. Therefore, the first element discussed below can be referred to as the second element without departing from the teachings of the present disclosure.

[0045] Spatially relative terms such as "below," "below," "under," "down," "above," "up," "above," "higher," and "side" (e.g., as in "sidewall") may be used herein for descriptive purposes and thereby for describing the relationship of one element to another element(s) as shown in the accompanying drawings. In addition to the orientations depicted in the accompanying drawings, spatially relative terms are intended to encompass different orientations of the device in use, operation, and / or manufacture. For example, if the device in the accompanying drawings is flipped, an element described as being "below" or "below" other elements or features will then be oriented as being "above" the other elements or features. Thus, the term "below" may include both above and below orientations. Further, the device may be oriented in other ways (e.g., rotated 90 degrees or in other orientations), and therefore, the spatially relative descriptors used herein should be interpreted accordingly.

[0046] The terms used in this article are for the purpose of describing specific embodiments, and are not intended to be restrictive. As used in this article, the singular forms "one" and "the (said)" are also intended to include plural forms, unless the context clearly indicates otherwise. In addition, when used in this specification, the terms "include", "comprise", "contain", "contain" and / or "have" indicate the existence of the described features, integral bodies, steps, operations, elements, parts and / or their groups, but do not exclude the existence or increase of one or more other features, integral bodies, steps, operations, elements, parts and / or their groups. It should also be noted that, as used in this article, the terms "substantially", "approximately" and other similar terms are used as approximate terms and are not used as degree terms, and therefore, are used to illustrate the inherent deviations of measured values, calculated values ​​and / or provided values ​​that will be recognized by those of ordinary skill in the art.

[0047] Various embodiments are described herein with reference to cross-sectional illustrations and / or exploded illustrations that are schematic illustrations of embodiments and / or intermediate structures. Therefore, changes in the illustrated shapes due to, for example, manufacturing techniques and / or tolerances are expected. Therefore, the embodiments disclosed herein should not necessarily be interpreted as being limited to specific illustrated shapes of regions, but will include shape deviations, for example, caused by manufacturing. In this way, the regions shown in the accompanying drawings may be schematic in nature, and the shapes of these regions may not reflect the actual shapes of the regions of the device, and are therefore not necessarily intended to be restrictive.

[0048] Unless otherwise defined or implied herein, all terms (including technical and scientific terms) used herein have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. It will be further understood that terms such as those defined in commonly used dictionaries should be interpreted as having a meaning consistent with their meaning in the context of the relevant technology and the present disclosure, and unless explicitly defined as such in this article, these terms should not be interpreted in an idealized or overly formal sense.

[0049] Figure 1 2 is a perspective view schematically showing a display device 1 according to an embodiment. Figure 1 , the display device 1 may include a display area DA that displays an image and a non-display area NDA that does not display an image. The display device 1 may be configured to provide an image by an array of a plurality of sub-pixels two-dimensionally arranged in the display area DA in a plan view. The sub-pixels may be configured to emit light of different colors, respectively, and, for example, the sub-pixels may include one of a red sub-pixel, a green sub-pixel, and a blue sub-pixel.

[0050] In an embodiment, the subpixels may include a first subpixel PX1, a second subpixel PX2, and a third subpixel PX3, and hereinafter, for ease of explanation, an embodiment is described in which the first subpixel PX1 includes a red subpixel, the second subpixel PX2 includes a green subpixel, and the third subpixel PX3 includes a blue subpixel.

[0051] The first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 include sub-pixels that can emit red light Lr (see Figure 2 ), green light Lg (see Figure 2 ) and blue light Lb (see Figure 2 ) area, and the display device 1 can be configured to provide an image using light emitted from the sub-pixel.

[0052] The non-display area NDA, which is an area that does not provide an image, may completely surround the display area DA. A driver or main voltage line configured to provide an electrical signal or power to a sub-pixel circuit may be arranged in the non-display area NDA. The non-display area NDA may include a pad (i.e., an area to which an electronic device or a printed circuit board may be electrically connected).

[0053] like Figure 1 As shown in , the display area DA may have a polygonal shape (including a rectangular shape). For example, the display area DA may have a rectangular shape in which the horizontal length is greater than the vertical length, a rectangular shape in which the horizontal length is less than the vertical length, or a square shape. In other embodiments, the display area DA may have a circular shape, an elliptical shape, or other polygonal shapes such as a triangular shape or a pentagonal shape. Figure 1The display device 1 is shown to be a flat display device having a planar shape, but the display device 1 may be implemented in various forms such as a flexible display device, a foldable display device, and a rollable display device.

[0054] In an embodiment, the display device 1 may include an organic light-emitting display device. In other embodiments, the display device 1 may include an inorganic light-emitting display device or a quantum dot light-emitting display device. For example, the emission layer of the display element included in the display device 1 may include an organic material, an inorganic material, a quantum dot, an organic material and a quantum dot, an inorganic material and a quantum dot, or an organic material, an inorganic material and a quantum dot. Hereinafter, for ease of explanation, an embodiment in which the display device 1 includes an organic light-emitting display device will be described in detail.

[0055] Figure 2 is a schematic cross-sectional view schematically showing a display device 1 according to the embodiment.

[0056] refer to Figure 2 , the display device 1 may include a circuit layer PCL on a substrate 100. The circuit layer PCL may include a first sub-pixel circuit PC1, a second sub-pixel circuit PC2, and a third sub-pixel circuit PC3 and an insulating layer, and the first sub-pixel circuit PC1, the second sub-pixel circuit PC2, and the third sub-pixel circuit PC3 may each include a thin film transistor and / or a capacitor. The display element layer DEL may include a first light-emitting diode LED1, a second light-emitting diode LED2, and a third light-emitting diode LED3 as display elements. The first sub-pixel circuit PC1, the second sub-pixel circuit PC2, and the third sub-pixel circuit PC3 may be electrically connected to the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 of the display element layer DEL, respectively.

[0057] The first light emitting diode LED1, the second light emitting diode LED2 and the third light emitting diode LED3 may include an organic light emitting diode including an organic material. In an embodiment, the first light emitting diode LED1, the second light emitting diode LED2 and the third light emitting diode LED3 may include an inorganic light emitting diode including an inorganic material. The inorganic light emitting diode may include a PN junction diode including a material based on an inorganic semiconductor. Holes and electrons are injected when a voltage is applied to the PN junction diode in a positive direction, and the energy generated by the recombination of holes and electrons may be converted into light energy to emit light of a specific color. The above-mentioned inorganic light emitting diode may have a width from about several microns to about hundreds of microns, or a width from about several nanometers to about hundreds of nanometers. In some embodiments, the first light emitting diode LED1, the second light emitting diode LED2 and the third light emitting diode LED3 may include a light emitting diode including quantum dots. As described above, the emission layers of the first light emitting diode LED1, the second light emitting diode LED2 and the third light emitting diode LED3 may include organic materials, inorganic materials, quantum dots, organic materials and quantum dots, inorganic materials and quantum dots, or organic materials, inorganic materials and quantum dots.

[0058] The first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may be configured to emit light of the same color. For example, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may be configured to emit blue light Lb. However, the present disclosure is not limited thereto. In other embodiments, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may be configured to emit light of different colors. The light (e.g., blue light Lb) emitted from the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may pass through the color conversion-transmission layer FNL via the encapsulation layer TFE1 on the display element layer DEL.

[0059] The color conversion-transmission layer FNL may include an optical layer configured to transmit light (e.g., blue light Lb) emitted from the display element layer DEL without color conversion or to perform color conversion on the light (e.g., blue light Lb) emitted from the display element layer DEL. For example, the color conversion-transmission layer FNL may include a color converter configured to convert the light (e.g., blue light Lb) emitted from the display element layer DEL into light of other colors and a transmissor configured to transmit the light (e.g., blue light Lb) emitted from the display element layer DEL without color conversion. The color conversion-transmission layer FNL may include a color converter 500 that may include a first color converter 510 corresponding to the first subpixel PX1, a second color converter 520 corresponding to the second subpixel PX2, and a transmissor 530 corresponding to the third subpixel PX3. The first color converter 510 may be configured to convert the blue light Lb into red light Lr, and the second color converter 520 may be configured to convert the blue light Lb into green light Lg. The transmissor 530 may be configured to transmit the blue light Lb without color conversion.

[0060] The color filter layer CFL may be disposed above the color conversion-transmission layer FNL. The upper encapsulation layer TFE2 may be disposed between the color conversion-transmission layer FNL and the color filter layer CFL. The color filter layer CFL may include a first color filter 810, a second color filter 820, and a third color filter 830 having different colors, respectively. In an embodiment, the first color filter 810 may include a red color filter, the second color filter 820 may include a green color filter, and the third color filter 830 may include a blue color filter.

[0061] The color purity of each of the lights color-converted or transmitted through the color conversion-transmission layer FNL may be improved by the first color filter 810, the second color filter 820, and the third color filter 830. The color filter layer CFL may be configured to prevent or minimize reflection of external light (e.g., light incident to the display device 1 from outside the display device 1) and recognition of the light by a user.

[0062] The protective layer 900 may be disposed on the color filter layer CFL. The protective layer 900 may include an organic material. For example, the protective layer 900 may include a light-transmitting organic material (eg, acrylic resin).

[0063] In an embodiment, after the color conversion-transmission layer FNL, the upper encapsulation layer TFE2, and the color filter layer CFL have been sequentially formed on the encapsulation layer TFE1, the protective layer 900 may be formed by coating (e.g., directly coating) and curing on the color filter layer CFL. In some embodiments, other optical films (e.g., anti-reflection (AR) films) (not shown) may be disposed on the protective layer 900. In some embodiments, a window (not shown) may be further disposed on the protective layer 900.

[0064] The display device 1 having the above-described structure may include electronic devices configured to display video or still images (eg, televisions, bulletin boards, theater screens, monitors, tablet personal computers, and notebooks).

[0065] Figure 3 Shows Figure 2 The optical layers of the color conversion-transmission layer FNL shown in FIG.

[0066] refer to Figure 3 , the first color converter 510 may be configured to convert the blue light Lb incident to the first color converter 510 into red light Lr. Figure 3 As shown in , the first color converter 510 may include a first photosensitive polymer BR1 and first quantum dots QD1 and first scattering particles SC1 distributed in the first photosensitive polymer BR1.

[0067] The first quantum dot QD1 may be excited due to the blue light Lb and may isotropically emit red light Lr having a wavelength greater than that of the blue light Lb. The first photosensitive polymer BR1 may include a transparent organic material.

[0068] The first scattering particles SC1 may scatter the blue light Lb that is not absorbed into the first quantum dots QD1, so that a larger amount of the first quantum dots QD1 are excited, thereby improving the color conversion efficiency. The first scattering particles SC1 may include, for example, titanium oxide (TiO 2 ) and / or metal particles, etc. The first quantum dot QD1 can be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds and combinations thereof.

[0069] The second color converter 520 may be configured to convert the blue light Lb incident to the second color converter 520 into green light Lg. Figure 3 As shown in FIG. 5 , the second color converter 520 may include a second photosensitive polymer BR2 and second quantum dots QD2 and second scattering particles SC2 distributed in the second photosensitive polymer BR2.

[0070] The second quantum dot QD2 may be excited due to the blue light Lb and may isotropically emit green light Lg having a wavelength greater than that of the blue light Lb. The second photosensitive polymer BR2 may include a transparent organic material.

[0071] The second scattering particles SC2 may scatter the blue light Lb that is not absorbed into the second quantum dots QD2, so that a larger amount of the second quantum dots QD2 are excited, thereby improving the color conversion efficiency. The second scattering particles SC2 may include, for example, titanium oxide (TiO 2 ) and / or metal particles, etc. The second quantum dot QD2 can be selected from II-VI group compounds, III-V group compounds, IV-VI group compounds, IV group elements, IV group compounds and combinations thereof.

[0072] For example, the first quantum dot QD1 and the second quantum dot QD2 may include the same material. The size of the second quantum dot QD2 may be greater than that of the first quantum dot QD1.

[0073] The transmitter 530 may be configured to transmit the blue light Lb without color conversion of the blue light Lb incident to the transmitter 530. Figure 3 As shown in , the transmissive device 530 may include a third photosensitive polymer BR3 in which third scattering particles SC3 are distributed. The third photosensitive polymer BR3 may include a transparent organic material (e.g., a silicon-based resin and an epoxy-based resin, etc.), and may include the same material as the first photosensitive polymer BR1 and the second photosensitive polymer BR2. The third scattering particles SC3 may scatter and emit blue light Lb, and may include the same material as the first scattering particles SC1 and the second scattering particles SC2.

[0074] Figure 4 2 is a schematic diagram of an equivalent circuit of a light emitting diode LED included in the display device 1 according to the embodiment and a sub-pixel circuit PC electrically connected to the light emitting diode LED. Figure 4 The sub-pixel circuit PC shown in FIG. 1 may correspond to the sub-pixel circuit PC shown in FIG. Figure 2 Each of the first sub-pixel circuit PC1, the second sub-pixel circuit PC2 and the third sub-pixel circuit PC3 described above, and Figure 4 The light emitting diode LED shown in the figure may correspond to the light emitting diode LED shown in the figure Figure 2 Each of the first light emitting diode LED1, the second light emitting diode LED2 and the third light emitting diode LED3 is described.

[0075] refer to Figure 4, a sub-pixel electrode (e.g., an anode) of a light emitting diode (e.g., a light emitting diode LED) may be electrically connected to the sub-pixel circuit PC, and a counter electrode (e.g., a cathode) of the light emitting diode LED may be electrically connected to a common voltage line VSL configured to provide a common voltage ELVSS, or to an auxiliary wiring (not shown). The light emitting diode LED may be configured to emit light having a brightness corresponding to the amount of current provided from the sub-pixel circuit PC.

[0076] The sub-pixel circuit PC may be configured to control the amount of current flowing from a driving voltage line VDL configured to provide a driving voltage ELVDD to a common voltage line VSL via a light emitting diode LED in response to a data signal. The sub-pixel circuit PC may include a first thin film transistor T1, a second thin film transistor T2, a third thin film transistor T3 and a storage capacitor Cst.

[0077] Each of the first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3 may include an oxide semiconductor transistor (including a semiconductor layer including an oxide semiconductor) or a silicon semiconductor transistor (including a semiconductor layer including polycrystalline silicon). Depending on the type of the thin film transistor, the first electrode may include one of a source electrode and a drain electrode, and the second electrode may include the other of the source electrode and the drain electrode.

[0078] The first thin film transistor T1 may include a driving thin film transistor. A first electrode of the first thin film transistor T1 may be electrically connected to a driving voltage line VDL configured to provide a driving voltage ELVDD, and a second electrode of the first thin film transistor T1 may be electrically connected to a sub-pixel electrode of the light emitting diode LED. A gate electrode of the first thin film transistor T1 may be electrically connected to a first node N1. The first thin film transistor T1 may be configured to control the amount of current flowing from the driving voltage line VDL through the light emitting diode LED in response to a voltage of the first node N1.

[0079] The second thin film transistor T2 may include a switching thin film transistor. A first electrode of the second thin film transistor T2 may be electrically connected to the data line DL, and a second electrode of the second thin film transistor T2 may be electrically connected to the first node N1. A gate electrode of the second thin film transistor T2 may be electrically connected to the scan line SL. The second thin film transistor T2 may be turned on when a scan signal is provided from the scan line SL, and may electrically connect the data line DL and the first node N1.

[0080] The third thin film transistor T3 may include an initialization thin film transistor and / or a sensing thin film transistor. A first electrode of the third thin film transistor T3 may be electrically connected to the second node N2, and a second electrode of the third thin film transistor T3 may be electrically connected to the sensing line ISL. A gate electrode of the third thin film transistor T3 may be electrically connected to the control line CL.

[0081] The storage capacitor Cst may be electrically connected between the first node N1 and the second node N2. For example, a first electrode of the storage capacitor Cst may be electrically connected to the gate electrode of the first thin film transistor T1, and a second electrode of the storage capacitor Cst may be electrically connected to the sub-pixel electrode of the light emitting diode LED.

[0082] although Figure 4 The first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3 are shown as NMOS transistors, but the present disclosure is not limited thereto. For example, at least one of the first thin film transistor T1, the second thin film transistor T2, and the third thin film transistor T3 may include a PMOS transistor.

[0083] although Figure 4 Three thin film transistors are shown, but the present disclosure is not limited thereto. The sub-pixel circuit PC may include four or more thin film transistors.

[0084] Figure 5 is a schematic cross-sectional view schematically showing a portion of a display area DA of a display device 1 according to an embodiment. Figure 5 It is along Figure 1 A schematic cross-sectional view of the display device 1 taken along line AA'. Figure 5 , the display device 1 may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3 that emit light of different colors, respectively. For example, the first sub-pixel PX1 may emit red light Lr (see Figure 2 ), the second sub-pixel PX2 can emit green light Lg (see Figure 2 ), and the third sub-pixel PX3 can emit blue light Lb (see Figure 2 ).

[0085] The display device 1 may include a stacked structure including a substrate 100 and a circuit layer PCL, a display element layer DEL, an encapsulation layer TFE1, a color conversion-transmission layer FNL, an upper encapsulation layer TFE2, a color filter layer CFL, and a protective layer 900 sequentially stacked on the substrate 100. The display element layer DEL may include a first light emitting diode LED1, a second light emitting diode LED2, and a third light emitting diode LED3 electrically connected to a sub-pixel circuit of the circuit layer PCL. The circuit layer PCL may include a plurality of sub-pixel circuits corresponding to the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, respectively. As described above with reference to Figure 4 As described above, the sub-pixel circuit may include a plurality of thin film transistors TFT and a storage capacitor Cst. For example, the thin film transistor TFT may correspond to the first thin film transistor T1 (see Figure 4 ).

[0086] The substrate 100 may include, for example, glass or a polymer resin. The polymer resin may include at least one of polyethersulfone, polyarylate, polyetherimide, polyethylene naphthalate, polyethylene terephthalate, polyphenylene sulfide, polyimide, polycarbonate, triacetyl cellulose, and cellulose acetate propionate. The substrate 100 may have a single-layer or multi-layer structure including the above materials. In an embodiment, the substrate 100 may have a multi-layer structure including an organic material / inorganic material / organic material.

[0087] The circuit layer PCL may be disposed on the substrate 100 . Figure 5 The circuit layer PCL is shown to include a thin film transistor TFT, a storage capacitor Cst, and a first buffer layer 111, a second buffer layer 112, a gate insulating layer 113, an interlayer insulating layer 115, and a planarization layer 118 disposed under or / and on the components.

[0088] The first and second buffer layers 111 and 112 may reduce or prevent foreign matter, moisture, or external air from penetrating from under the substrate 100. The first and second buffer layers 111 and 112 may include an inorganic insulating material such as silicon nitride, silicon oxynitride, and silicon oxide, and may include a single layer or a plurality of layers including the above inorganic insulating materials.

[0089] The bias electrode BSM may be disposed on the first buffer layer 111 to correspond to the thin film transistor TFT. In an embodiment, a voltage may be applied to the bias electrode BSM. The bias electrode BSM may prevent external light from reaching the semiconductor layer Act. Accordingly, the characteristics of the thin film transistor TFT may be stabilized. In some embodiments, the bias electrode BSM may be omitted.

[0090] The semiconductor layer Act may be disposed on the second buffer layer 112. The semiconductor layer Act may include amorphous silicon or polycrystalline silicon. In other embodiments, the semiconductor layer Act may include an oxide of at least one material selected from indium (In), gallium (Ga), tin (Sn), zirconium (Zr), vanadium (V), hafnium (Hf), cadmium (Cd), germanium (Ge), chromium (Cr), titanium (Ti), aluminum (Al), cesium (Cs), cerium (Ce), and zinc (Zn). In some embodiments, the semiconductor layer Act may include a Zn oxide-based material (e.g., Zn oxide, In-Zn oxide, and Ga-In-Zn oxide, etc.). In some embodiments, the semiconductor layer Act may include an In-Ga-Zn-O (IGZO) semiconductor, an In-Sn-Zn-O (ITZO) semiconductor, or an In-Ga-Sn-Zn-O (IGTZO) semiconductor in which metals such as In, Ga, and Sn are included in addition to ZnO. The semiconductor layer Act may include a channel region and a source region and a drain region respectively arranged on both sides of the channel region. The gate electrode GE may overlap with a channel region of the semiconductor layer Act.

[0091] The gate electrode GE may include a low resistance metal material. The gate electrode GE may include a conductive material such as molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti), and may include a single layer or a plurality of layers including the above materials.

[0092] The gate insulating layer 113 may be disposed between the semiconductor layer Act and the gate electrode GE. The gate insulating layer 113 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, or zinc oxide.

[0093] The first electrode CE1 of the storage capacitor Cst may be disposed at the same layer as the gate electrode GE. The first electrode CE1 and the gate electrode GE may include the same material. Figure 5 It is shown that the gate electrode GE of the thin film transistor TFT is arranged separately from the first electrode CE1 of the storage capacitor Cst, but in an embodiment, the storage capacitor Cst may overlap with the thin film transistor TFT. The gate electrode GE of the thin film transistor TFT may perform a function as the first electrode CE1 of the storage capacitor Cst.

[0094] The interlayer insulating layer 115 may be provided to cover the gate electrode GE and the first electrode CE1 of the storage capacitor Cst. The interlayer insulating layer 115 may include an inorganic insulating material such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, or a combination thereof.

[0095] The source electrode SE, the drain electrode DE, the second electrode CE2 of the storage capacitor Cst, and the like may be disposed on the interlayer insulating layer 115 .

[0096] The source electrode SE, the drain electrode DE, and the second electrode CE2 of the storage capacitor Cst may include a conductive material including Mo, Al, Cu, Ti, etc., and may include a single layer or a plurality of layers including the above materials. For example, the source electrode SE, the drain electrode DE, and the second electrode CE2 of the storage capacitor Cst may have a multilayer structure including Ti / Al / Ti. The source electrode SE and the drain electrode DE may contact the source region and the drain region of the semiconductor layer Act through the contact holes, respectively.

[0097] The second electrode CE2 of the storage capacitor Cst may overlap the first electrode CE1 with the interlayer insulating layer 115 therebetween and may constitute the storage capacitor Cst together with the first electrode CE1. The interlayer insulating layer 115 may serve as a dielectric layer of the storage capacitor Cst.

[0098] The planarization layer 118 may be arranged to cover the source electrode SE, the drain electrode DE, and the second electrode CE2 of the storage capacitor Cst. The planarization layer 118 may include a single layer or multiple layers of a film including an organic material, and may provide a planar top surface. The planarization layer 118 may include a general polymer such as benzocyclobutene (BCB), polyimide, hexamethyldisiloxane (HMDSO), polymethylmethacrylate (PMMA) or polystyrene (PS), a polymer derivative having a phenolic group, an acrylic polymer, an imide polymer, an aryl ether polymer, an amide polymer, a fluorine polymer, a paraxylene polymer, a vinyl alcohol polymer, and / or a mixture thereof.

[0099] The display element layer DEL may be disposed on the circuit layer PCL having the above structure. The display element layer DEL may include a first light emitting diode LED1, a second light emitting diode LED2, and a third light emitting diode LED3 as display elements, which are organic light emitting diodes. The first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may include a first sub-pixel electrode 210R, a second sub-pixel electrode 210G, and a third sub-pixel electrode 210B, respectively. In an embodiment, the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may include a common emission layer 220 and a counter electrode 230.

[0100] The first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may include a (semi-) transparent electrode or a reflective electrode. In some embodiments, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may include an indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (In 2 O 3 ), indium gallium oxide (IGO), aluminum zinc oxide (AZO), or a combination thereof. In an embodiment, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may include a reflective film including silver (Ag), magnesium (Mg), aluminum (Al), platinum (Pt), palladium (Pd), gold (Au), nickel (Ni), neodymium (Nd), iridium (Ir), chromium (Cr), a compound thereof, or a combination thereof. As another example, a reflective film including ITO, IZO, ZnO, or In 2 O 3 A film may be further provided on / under the above-mentioned reflective film. For example, the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B may each be provided as a multi-layer structure including ITO / Ag / ITO.

[0101] The first bank layer 215 may be disposed on the planarization layer 118. The first bank layer 215 may include an opening 215OP exposing a central portion of each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The first bank layer 215 may cover the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The first bank layer 215 may prevent arcing, etc., from being generated at the edges of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B by increasing the distance from the counter electrode 230 to the edge of each of the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B.

[0102] The first bank layer 215 may include one or more organic insulating materials selected from the group consisting of polyimide, polyamide, acrylic resin, BCB, and phenolic resin.

[0103] The emission layer 220 of each of the first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3 may include an organic material including a fluorescent or phosphorescent material that emits red, green, blue, or white light. The emission layer 220 may include a low molecular organic material or a high molecular organic material, and functional layers such as a hole transport layer (HTL), a hole injection layer (HIL), an electron transport layer (ETL), and an electron injection layer (EIL) may be further selectively disposed under and over the emission layer 220. Figure 5 As shown in , the emission layer 220 can be formed integrally throughout the first sub-pixel electrode 210R, the second sub-pixel electrode 210G and the third sub-pixel electrode 210B, but the present disclosure is not limited thereto. In some embodiments, the emission layer 220 may also include a layer patterned to correspond to the first sub-pixel electrode 210R, the second sub-pixel electrode 210G and the third sub-pixel electrode 210B, respectively. In this case, the emission layer 220 may include a first color emission layer, a second color emission layer and a third color emission layer that emit light of the first wavelength band, the light of the second wavelength band and the light of the third wavelength band, respectively. The third color emission layer may be configured to emit light of the third wavelength band (e.g., blue light). In an embodiment, the emission layer 220 may be configured to emit light of a wavelength in the range of about 450nm to about 495nm.

[0104] The counter electrode 230 may be disposed on the emission layer 220 to correspond to the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. The counter electrode 230 may be formed integrally throughout the first sub-pixel electrode 210R, the second sub-pixel electrode 210G, and the third sub-pixel electrode 210B. In an embodiment, the counter electrode 230 may include a conductive material having a low work function. For example, the counter electrode 230 may include a semi-transparent layer containing materials such as Ag, Mg, Al, Pt, Pd, Au, Ni, Nd, Ir, Cr, Li, Ca, their alloys, or combinations thereof. As another example, the counter electrode 230 may further include a semi-transparent layer containing materials such as ITO, IZO, ZnO, or In on the semi-transparent layer containing the above materials. 2 O 3 Etc. layers.

[0105] The first emission area EA1, the second emission area EA2, and the third emission area EA3 may correspond to the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3, respectively. The first emission area EA1, the second emission area EA2, and the third emission area EA3 may each include an area in which the light generated from the first light-emitting diode LED1, the second light-emitting diode LED2, and the third light-emitting diode LED3 is emitted to the outside, respectively. The first emission area EA1 may be defined as a portion of the first sub-pixel electrode 210R exposed by the opening 215OP of the first bank layer 215. The second emission area EA2 may be defined as a portion of the second sub-pixel electrode 210G exposed by the opening 215OP of the first bank layer 215. The third emission area EA3 may be defined as a portion of the third sub-pixel electrode 210B exposed by the opening 215OP of the first bank layer 215. In other words, each of the first emission area EA1, the second emission area EA2, and the third emission area EA3 may be defined by a corresponding one of the openings 215OP of the first bank layer 215.

[0106] The first emission area EA1, the second emission area EA2, and the third emission area EA3 may be spaced apart from each other. The area other than the first emission area EA1, the second emission area EA2, and the third emission area EA3 in the display area DA may include a non-emission area. The first emission area EA1, the second emission area EA2, and the third emission area EA3 may be distinguished from each other by the non-emission area.

[0107] A spacer (not shown) for preventing mask imprint may be further provided on the first bank layer 215. In an embodiment, the spacer and the first bank layer 215 may be integral with each other. For example, the spacer and the first bank layer 215 may be simultaneously formed in the same process using, for example, a half-tone mask.

[0108] The encapsulation layer TFE1 may be arranged to cover the display element layer DEL. The first light emitting diode LED1, the second light emitting diode LED2, and the third light emitting diode LED3, which may be easily damaged due to moisture or oxygen from the outside, may be covered and protected by the encapsulation layer TFE1. The encapsulation layer TFE1 may cover the display area DA and may extend to the outside of the display area DA. The encapsulation layer TFE1 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the encapsulation layer TFE1 may include a first inorganic encapsulation layer 310, a first organic encapsulation layer 320, and a second inorganic encapsulation layer 330 sequentially stacked on each other.

[0109] Each of the first inorganic encapsulation layer 310 and the second inorganic encapsulation layer 330 may include one or more inorganic materials such as aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, silicon oxynitride, or a combination thereof. The first organic encapsulation layer 320 may include a polymer material. The polymer material may include an acrylic resin, an epoxy resin, a polyimide, polyethylene, etc., or a combination thereof. In an embodiment, the first organic encapsulation layer 320 may include an acrylate. The first organic encapsulation layer 320 may be formed by curing a monomer or by coating a polymer.

[0110] In the event that cracks are generated in the encapsulation layer TFE1, the encapsulation layer TFE1 having the above-described multi-layer structure may prevent the cracks from propagating between the first inorganic encapsulation layer 310 and the first organic encapsulation layer 320 or between the first organic encapsulation layer 320 and the second inorganic encapsulation layer 330. The encapsulation layer TFE1 may prevent or minimize the formation of a path through which moisture or oxygen from the outside may penetrate into the display area DA.

[0111] In some embodiments, other layers (not shown) such as a capping layer may be further disposed between the first inorganic encapsulating layer 310 and the counter electrode 230 .

[0112] The color conversion-transmission layer FNL may be disposed on the encapsulation layer TFE1. The color conversion-transmission layer FNL may include a first color converter 510, a second color converter 520, a transmitter 530, and a second bank layer 600. The color conversion-transmission layer FNL may contact (eg, directly contact) the second inorganic encapsulation layer 330 of the encapsulation layer TFE1.

[0113] The second bank layer 600 may be disposed on the encapsulation layer TFE1. The second bank layer 600 may include an organic material or an inorganic material. For example, the second bank layer 600 may include an inorganic material such as silicon oxide, silicon nitride and / or silicon oxynitride. Depending on the circumstances, the second bank layer 600 may further include a light blocking material to serve as a light blocking layer. The light blocking material may include, for example, at least one of a black pigment, a black dye, black particles, and metal particles.

[0114] In the second bank layer 600, the opening COP may be defined by the partition. The first opening COP1 of the second bank layer 600 may correspond to the opening 215OP of the first bank layer 215 exposing the first subpixel electrode 210R, the second opening COP2 of the second bank layer 600 may correspond to the opening 215OP of the first bank layer 215 exposing the second subpixel electrode 210G, and the third opening COP3 of the second bank layer 600 may correspond to the opening 215OP of the first bank layer 215 exposing the third subpixel electrode 210B. For example, when viewed in a direction (z direction) perpendicular to the substrate 100, the first opening COP1 of the second bank layer 600 may overlap with the opening 215OP of the first bank layer 215 exposing the first subpixel electrode 210R, the second opening COP2 of the second bank layer 600 may overlap with the opening 215OP of the first bank layer 215 exposing the second subpixel electrode 210G, and the third opening COP3 of the second bank layer 600 may overlap with the opening 215OP of the first bank layer 215 exposing the third subpixel electrode 210B. The spacer may be disposed between the first opening COP1, the second opening COP2, and the third opening COP3 of the second bank layer 600.

[0115] The first color converter 510, the second color converter 520, and the transmittance 530 may fill the opening COP of the second bank layer 600. In an embodiment, the first color converter 510, the second color converter 520, and the transmittance 530 may include at least one of quantum dots and scattering particles.

[0116] The first color converter 510 may fill the first opening COP1 of the second bank layer 600. The first color converter 510 may overlap the first emission area EA1. The first subpixel PX1 may include a first light emitting diode LED1 and the first color converter 510.

[0117] The first color converter 510 may be configured to convert the light of the third wavelength band generated in the emission layer 220 on the first sub-pixel electrode 210R into the light of the first wavelength band. The first color converter 510 may be configured to convert blue light into red light. For example, in the case where light with a wavelength in the range of about 450 nm to about 495 nm is generated in the emission layer 220 on the first sub-pixel electrode 210R, the first color converter 510 may convert the light into light with a wavelength in the range of about 630 nm to about 780 nm. Accordingly, light with a wavelength in the range of about 630 nm to about 780 nm may be emitted from the first sub-pixel PX1 to the outside.

[0118] The first color converter 510 may include a first photosensitive polymer BR1 and first quantum dots QD1 and first scattering particles SC1 distributed in the first photosensitive polymer BR1.

[0119] The second color converter 520 may fill the second opening COP2 of the second bank layer 600. The second color converter 520 may overlap the second emission area EA2. The second subpixel PX2 may include a second light emitting diode LED2 and the second color converter 520.

[0120] The second color converter 520 may be configured to convert the light of the third wavelength band generated in the emission layer 220 on the second sub-pixel electrode 210G into light of the second wavelength band. The second color converter 520 may be configured to convert blue light into green light. For example, in the case where light of a wavelength in the range of about 450 nm to about 495 nm is generated in the emission layer 220 on the second sub-pixel electrode 210G, the second color converter 520 may convert the light into light of a wavelength in the range of about 495 nm to about 570 nm. Accordingly, light of a wavelength in the range of about 495 nm to about 570 nm may be emitted from the second sub-pixel PX2 to the outside.

[0121] The second color converter 520 may include a second photosensitive polymer BR2, and second quantum dots QD2 and second scattering particles SC2 distributed in the second photosensitive polymer BR2.

[0122] The transmittor 530 may fill the third opening COP3 of the second bank layer 600. The transmittor 530 may overlap the third emission area EA3. The third subpixel PX3 may include a third light emitting diode LED3 and the transmittor 530.

[0123] The transmitter 530 may be configured to emit light generated in the emission layer 220 on the third sub-pixel electrode 210B to the outside without color conversion. The transmitter 530 may be configured to emit blue light without color conversion. For example, in the case where light with a wavelength in the range of about 450 nm to about 495 nm is generated in the emission layer 220 on the third sub-pixel electrode 210B, the transmitter 530 may emit the light to the outside without color conversion.

[0124] The transmitter 530 may include a third photosensitive polymer BR3 in which third scattering particles SC3 are distributed. In an embodiment, the transmitter 530 may not include quantum dots.

[0125] At least one of the first quantum dot QD1 and the second quantum dot QD2 may include a semiconductor material such as cadmium sulfide (CdS), cadmium telluride (CdTe), zinc sulfide (ZnS), indium phosphide (InP), etc., or a combination thereof. The quantum dot may have a size of several nanometers, and the wavelength of the color-converted light may be different depending on the size of the quantum dot.

[0126] In an embodiment, the core of the quantum dot may include a material selected from among Group II-VI compounds, Group III-V compounds, Group IV-VI compounds, Group IV elements, Group IV compounds, and combinations thereof.

[0127] The II-VI compounds may be selected from binary compounds (selected from the group consisting of CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnO, HgS, HgSe, HgTe, MgSe, MgS and mixtures thereof), ternary compounds (selected from the group consisting of CdSeS, CdSeTe, CdSTe, ZnSeS, ZnSeTe, ZnSTe, HgSeS, HgSeTe, HgSTe, CdZnS, CdZnSe, CdZnT e, CdHgS, CdHgSe, CdHgTe, HgZnS, HgZnSe, HgZnTe, MgZnSe, MgZnS and mixtures thereof) and quaternary compounds (selected from the group consisting of CdZnSeS, CdZnSeTe, CdZnSTe, CdHgSeS, CdHgSeTe, CdHgSTe, HgZnSeS, HgZnSeTe, HgZnSTe and mixtures thereof).

[0128] The III-V compounds can be selected from binary compounds (selected from the group including GaN, GaP, GaAs, GaSb, AlN, AlP, AlAs, AlSb, InN, InP, InAs, InSb and their mixtures), ternary compounds (selected from the group including GaNPs, GaNAs, GaNSb, GaPAs, GaPSb, AlNPs, AlNAs, AlNSb, AlPAs, AlPSb, InGaP, InNP, InNAs, InNSb, InPAs, InPSb and their mixtures) and quaternary compounds (selected from the group including GaAlNPs, GaAlNAs, GaAlNSb, GaAlPAs, GaAlPSb, GaInNP, GaInNAs, GaInNSb, GaInPAs, GaInPSb, InAlNP, InAlNAs, InAlNSb, InAlPAs, InAlPSb and their mixtures).

[0129] The IV-VI group compounds may be selected from binary compounds (selected from the group including SnS, SnSe, SnTe, PbS, PbSe, PbTe and mixtures thereof), ternary compounds (selected from the group including SnSeS, SnSeTe, SnSTe, PbSeS, PbSeTe, PbSTe, SnPbS, SnPbSe, SnPbTe and mixtures thereof) and quaternary compounds (selected from the group including SnPbSSe, SnPbSeTe, SnPbSTe and mixtures thereof). The IV group elements may be selected from the group including Si, Ge and mixtures thereof. The IV group compounds may include binary compounds (selected from the group including SiC, SiGe and mixtures thereof).

[0130] Each of the elements included in the polynary compounds such as binary compounds, ternary compounds and quaternary compounds may be present in the particle in a uniform or non-uniform concentration. The quantum dot may have a core-shell structure in which the shell surrounds the core. The interface between the core and the shell may have a concentration gradient in which the concentration of the element in the shell decreases toward the center of the shell.

[0131] In some embodiments, the quantum dot may have a core-shell structure including a core and a shell surrounding the core. The shell of the quantum dot may be used as a protective layer for preventing chemical denaturation of the core to maintain the characteristics of the semiconductor and / or a charging layer for imparting electrophoretic properties to the quantum dot. The shell may include a single layer or multiple layers. Examples of the shell of the quantum dot may include metal or non-metal oxides, semiconductor compounds, or combinations thereof.

[0132] For example, metal or non-metal oxides may include SiO 2 、Al 2 O 3 、TiO 2 、ZnO、MnO、Mn 2 O 3 , Mn 3 O 4 , CuO, FeO, Fe 2 O 3 , Fe 3 O 4 , CoO, Co 3 O 4 or binary compounds such as NiO, such as MgAl 2 O 4 、CoFe 2 O 4 、NiFe 2 O 4 or CoMn 2 O 4 or any combination thereof.

[0133] Examples of semiconductor compounds may include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, ZnSeS, ZnTeS, GaAs, GaP, GaSb, HgS, HgSe, HgTe, InAs, InP, InGaP, AlAs, AlP, and AlSb, etc., but the present disclosure is not limited thereto.

[0134] In an embodiment, the quantum dots may each have a full width at half maximum (FWHM) of an emission wavelength spectrum of about 45 nm or less, particularly about 40 nm or less, more particularly about 30 nm or less, and within the above range, color purity or color reproducibility may be improved. Light emitted by the quantum dots may be emitted in every direction, and therefore, the viewing angle of the light may be improved.

[0135] In addition, although not particularly limited, the form of the quantum dot may include shapes generally used in the present technical field, more specifically, nanowires, nanofibers, or nanoplates having a spherical shape, a pyramidal shape, a multi-armed shape, or a cubic shape.

[0136] Quantum dots can adjust the color of emitted light according to particle size, and accordingly, quantum dots can emit light of various colors (eg, blue, red, and green).

[0137] The first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may scatter light so that a greater amount of light is emitted. The first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may improve emission efficiency. At least one of the first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may include any material among metals or metal oxides to uniformly scatter light. For example, at least one of the first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may include TiO 2 、ZrO 2 、Al 2 O 3 、In 2 O 3 、ZnO、SnO 2 , Sb 2 O 3 At least one of the first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may have a refractive index of about 1.5 or more. Accordingly, the emission efficiency of the color conversion-transmission layer FNL may be improved. In some embodiments, at least one of the first scattering particles SC1, the second scattering particles SC2, and the third scattering particles SC3 may be omitted.

[0138] The first photosensitive polymer BR1, the second photosensitive polymer BR2, and the third photosensitive polymer BR3 may include a transparent organic material. For example, at least one of the first photosensitive polymer BR1, the second photosensitive polymer BR2, and the third photosensitive polymer BR3 may include a polymer resin such as an acrylic resin, BCB, or HMDSO.

[0139] The upper encapsulation layer TFE2 may be disposed on the color conversion-transmission layer FNL. The upper encapsulation layer TFE2 may prevent or minimize damage or contamination of the color conversion-transmission layer FNL due to penetration of impurities such as moisture and / or air from the outside, and may prevent generation and propagation of cracks due to external forces. The upper encapsulation layer TFE2 may improve the reliability of the display device 1 by enhancing protection of the color conversion-transmission layer FNL in the display device 1 having a structure in which an upper substrate is not provided and components are stacked on each other on the substrate 100 which is a single substrate.

[0140] The upper encapsulation layer TFE2 may cover the display area DA and may extend to the outside of the display area DA. The upper encapsulation layer TFE2 may include at least one organic encapsulation layer and at least one inorganic encapsulation layer. For example, the upper encapsulation layer TFE2 may include a third inorganic encapsulation layer 710, a second organic encapsulation layer 720, and a fourth inorganic encapsulation layer 730 sequentially stacked on each other.

[0141] The third inorganic encapsulation layer 710 and the fourth inorganic encapsulation layer 730 may include at least one inorganic material selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride and silicon oxynitride. The second organic encapsulation layer 720 may include a polymer material. The polymer material may include acrylic resin, epoxy resin, polyimide and polyethylene, etc. In an embodiment, the second organic encapsulation layer 720 may include acrylate. The second organic encapsulation layer 720 may be formed by curing a monomer or by coating a polymer. In an embodiment, the upper encapsulation layer TEF2 may be omitted.

[0142] The color filter layer CFL may be disposed on the upper encapsulation layer TFE2. In an embodiment, the color filter layer CFL may be formed (e.g., directly formed) on the top surface (in the z direction) of the upper encapsulation layer TFE2, and may include a first color filter 810, a second color filter 820, a third color filter 830, and a light blocking portion BP.

[0143] The first color filter 810 may be disposed on the first color converter 510 to correspond to the first sub-pixel PX1, the second color filter 820 may be disposed on the second color converter 520 to correspond to the second sub-pixel PX2, and the third color filter 830 may be disposed on the transmissive 530 to correspond to the third sub-pixel PX3. The first color filter 810, the second color filter 820, and the third color filter 830 may include a photosensitive resin. The first color filter 810, the second color filter 820, and the third color filter 830 may include a pigment or dye each expressing an inherent color.

[0144] The first color filter 810 may include a color filter configured to transmit light of a first color. For example, the first color filter 810 may be configured to transmit only light of a wavelength in the range of about 630nm to about 780nm. The first color filter 810 may include a red pigment or a red dye. The second color filter 820 may include a color filter configured to transmit light of a second color. For example, the second color filter 820 may be configured to transmit only light of a wavelength in the range of about 495nm to about 570nm. The second color filter 820 may include a green pigment or a green dye. The third color filter 830 may include a color filter configured to transmit light of a third color. For example, the third color filter 830 may be configured to transmit only light of a wavelength in the range of about 450nm to about 495nm. The third color filter 830 may include a blue pigment or a blue dye.

[0145] The color filter layer CFL can reduce the reflection of external light by the display device 1. For example, when external light reaches the first color filter 810, as described above, only light of a preset wavelength band can be transmitted through the first color filter 810, and light of other wavelength bands can be absorbed into the first color filter 810. Accordingly, among the external light incident on the display device 1, only light of a preset wavelength band can be transmitted through the first color filter 810, and a portion of the transmitted light can be reflected by the counter electrode 230 and / or the first sub-pixel electrode 210R under the first color filter 810 and can be re-emitted to the outside. The first color filter 810 can be configured to reduce the reflection of external light by reflecting only a portion of the external light incident on the location of the first sub-pixel PX1 to the outside. This description can also be applied to the second color filter 820 and the third color filter 830.

[0146] The light blocking portion BP may be formed by overlapping at least two color layers selected from the first color layer 810P, the second color layer 820P, and the third color layer 830P, which respectively include the same material as the first color filter 810, the second color filter 820, and the third color filter 830. The first color layer 810P, the second color layer 820P, and the third color layer 830P may overlap each other in the non-emission region. The first color layer 810P, the second color layer 820P, and the third color layer 830P may be formed simultaneously with the first color filter 810, the second color filter 820, and the third color filter 830. Through the above configuration, the color filter layer CFL can prevent color mixing even without an additional light blocking member such as a black matrix.

[0147] For example, the portion where the first color layer 810P and the second color layer 820P overlap each other, the portion where the second color layer 820P and the third color layer 830P overlap each other, the portion where the first color layer 810P and the third color layer 830P overlap each other, and the portion where the first color layer 810P, the second color layer 820P, and the third color layer 830P overlap each other can each be used as a black matrix. This is because, for example, in the case where the first color filter 810 transmits only light with a wavelength in the range of about 630nm to about 780nm and the third color filter 830 transmits only light with a wavelength in the range of about 450nm to about 495nm, light that can be transmitted through both the first color filter 810 and the third color filter 830 in the portion where the first color filter 810 and the third color filter 830 overlap each other theoretically does not exist.

[0148] The light blocking portion BP may overlap with a partition disposed between the openings COP of the second bank layer 600 (e.g., a partition disposed between the first opening COP1 and the second opening COP2, a partition disposed between the second opening COP2 and the third opening COP3, and a partition disposed between the first opening COP1 and the third opening COP3). The first color layer 810P, the second color layer 820P, and the third color layer 830P may include a portion of the first color filter 810 corresponding to the partition in the second bank layer 600, a portion of the second color filter 820 corresponding to the partition in the second bank layer 600, and a portion of the third color filter 830 corresponding to the partition in the second bank layer 600, respectively.

[0149] The protective layer 900 may be provided to cover the color filter layer CFL. The protective layer 900 may substantially cover a plurality of color filters. The protective layer 900 may contact (e.g., directly contact) the color filter layer CFL. The protective layer 900 may include an organic layer containing an organic material. For example, the protective layer 900 may include a light-transmitting organic material (e.g., a polyimide resin, an acrylic resin, and a resist material). The protective layer 900 may be formed by a coating process such as a slit coating process or a spin coating process and a deposition process such as a chemical vapor deposition process or a vacuum deposition process. The embodiment is not limited to the above-mentioned materials and methods for forming the protective layer 900.

[0150] The protective layer 900 may protect the color filter layer CFL and may flatten the top surface of the color filter layer CFL. Due to the stacked structure of the first color layer 810P, the second color layer 820P, and the third color layer 830P of the color filter layer CFL, the bottom surface of the protective layer 900 may have a concave-convex structure. The bottom surface of the protective layer 900 may have a concave surface corresponding to the convex surface included in the color filter layer CFL. The top surface of the protective layer 900 may be substantially planar.

[0151] The thickness H of the protective layer 900 may be greater than the thickness of the color filter layer CFL. The thickness H of the protective layer 900 may be in the range of about 3 μm to about 8 μm, or may be about 5 μm. The thickness H of the protective layer 900 may indicate a distance from the top surface of the color filter layer CFL (e.g., the third color filter 830) to the top surface of the protective layer 900 in a direction (z direction) perpendicular to the substrate 100.

[0152] In some embodiments, another layer such as a capping layer may be further disposed on the protective layer 900 and / or between the protective layer 900 and the color filter layer CFL. The capping layer may include an inorganic material. In some embodiments, the protective layer 900 may be covered with a window (not shown).

[0153] Fig. 6A and Figure 6B 1 and 2 are a schematic cross-sectional view and a plan view schematically illustrating a portion of a non-display area NDA of a display device 1 according to an embodiment, respectively. Fig. 6A It is along Figure 1 A schematic cross-sectional view of the display device 1 taken along line BB′.

[0154] The display device 1 may include a substrate 100, a dummy insulating layer IL, a color filter layer CFL, and a protective layer 900 arranged in a non-display area NDA. The dummy insulating layer IL may be formed by stacking a plurality of organic insulating layers and / or a plurality of inorganic insulating layers. The dummy insulating layer IL may have a Figure 5 The structure in which the layers in the display area DA are extended to the non-display area NDA is described. Figure 5 At least a portion of the described first buffer layer 111, the second buffer layer 112, the gate insulating layer 113, the interlayer insulating layer 115, the planarizing layer 118 and the first embankment layer 215 may extend to the non-display area NDA, and the dummy insulating layer IL may include the first buffer layer 11, the second buffer layer 112, the gate insulating layer 113, the interlayer insulating layer 115, the planarizing layer 118 and the first embankment layer 215 which are stacked on each other and extend to the non-display area NDA.

[0155] refer to Fig. 6A , the edge of the color filter layer CFL may be arranged in the non-display area NDA. For example, an end point of the color filter layer CFL may be located in the non-display area NDA. In an embodiment, the color filter layer CFL in the non-display area NDA may be arranged by stacking a portion of the first color filter 810, a portion of the second color filter 820, and a portion of the third color filter 830.

[0156] The protective layer 900 may be arranged in the non-display area NDA. The protective layer 900 may be arranged to extend from the display area DA to the non-display area NDA, and may be integrally disposed in the display area DA and the non-display area NDA. The protective layer 900 may cover the edges of the layers disposed under the protective layer 900. The protective layer 900 may cover the side surfaces of the layers disposed under the protective layer 900. The protective layer 900 may cover the edges of the color filter layer CFL. Fig. 6A As shown in , the protective layer 900 may substantially cover the edge of the color filter layer CFL and the edge of the dummy insulating layer IL. As another example, the protective layer 900 may cover the edge of the color filter layer CFL and the edge of a portion of the insulating layer included in the dummy insulating layer IL.

[0157] The display device 1 can be formed by stacking a plurality of layers on a substrate 100, and due to the tensile stress of each of the layers stacked on each other, the interface between the layers may be peeled off. In particular, among the layers stacked on each other, the layer with a larger thickness may have a larger tensile strength, and the tensile strength of the organic film may be greater than the tensile strength of the inorganic film. Compared with the layers arranged in the form of patterns (e.g., island patterns) separated from each other in the display device, the layers arranged throughout the entire display device may produce a larger tensile strength to the display device. When there is a layer with a large tensile strength, an interface with a weak bonding force may be peeled off.

[0158] Typically, the protective layer has a thickness greater than that of the color filter to flatten the top surface of the color filter, and may be provided as an organic layer including an organic material. The protective layer may be arranged on the entire surface of the display device, rather than in the form of an island pattern corresponding to a sub-pixel (e.g., a color filter). Due to the large tensile strength of the protective layer, the layers below the protective layer and the protective layer may be peeled off. Film peeling due to the tensile strength may occur at the outer edge portion of the display device.

[0159] According to an embodiment, protection layer 900 may include a plurality of grooves.

[0160] The protective layer 900 may include a plurality of first grooves GV1 arranged in the non-display area NDA. The protective layer 900 covers the edge of the color filter layer CFL and is arranged throughout the entire substrate 100, and the first grooves GV1 may reduce the tensile strength of the protective layer 900 and prevent film peeling in a weak layer occurring at an outer edge portion of the display device 1 due to the protective layer 900 in the non-display area NDA. Figure 2 , after forming all of the circuit layer PCL, the display element layer DEL, the encapsulation layer TFE1, the color conversion-transmission layer FNL, the upper encapsulation layer TFE2 and the color filter layer CFL, the first groove GV1 can be formed in the protective layer 900 formed on the above components, and therefore, compared with the case where the groove is formed in other layers provided under the protective layer 900, the first groove GV1 is more desirable in terms of process difficulty and the reliability of the display device 1 can be ensured.

[0161] The first groove GV1 may include a through hole in which a region of the protective layer 900 is removed in a thickness direction (e.g., z direction). The first groove GV1 may expose a top surface of a layer disposed under the protective layer 900. The first groove GV1 may expose a top surface of the color filter layer CFL. The first groove GV1 may be formed by an optical process. In the case where an optical pattern is added when forming the protective layer 900, the first groove GV1 may be formed without adding a mask for forming the groove.

[0162] refer to Fig. 6A and Figure 6B In a plan view (or on a plane defined by the x-direction and the y-direction crossing the z-direction), the region of the protective layer 900 may include a grid pattern in which the first grooves GV1 having a through-hole shape are provided. Figure 6B The first grooves GV1 are shown to have a rectangular shape with regular intervals, but the present disclosure is not limited thereto. In embodiments, the first grooves GV1 may be arranged at irregular and random intervals and may have a rectangular shape, other polygonal shapes, a circular shape, an elliptical shape, or an amorphous shape.

[0163] The center width W1 of the first groove GV1 may be about 1 μm to about 100 μm. The center width W1 of the first groove GV1 may indicate a width in a plan view, and may also indicate a width passing through a center point of the first groove GV. When the center width W1 of the first groove GV1 is about 1 μm or more, stress caused by the protective layer 900 may be reduced, and when the center width W1 of the first groove GV1 is not greater than about 100 μm, various layers disposed under the protective layer 900 may be sufficiently covered.

[0164] Fig. 7A and Figure 7B 1 is a cross-sectional view schematically showing a portion of a non-display area NDA of a display device 1 according to an embodiment. Fig. 7A and Figure 7B In, with Fig. 6A and Figure 6B The same reference numerals as in the accompanying drawings denote the same components, and therefore, their description will not be given repeatedly.

[0165] In an embodiment, the display device 1 may further include a sub-capping layer 900P disposed under or on the protective layer 900. The sub-capping layer 900P may overlap the first groove GV1. The sub-capping layer 900P may include one or more inorganic materials selected from aluminum oxide, titanium oxide, tantalum oxide, hafnium oxide, zinc oxide, silicon oxide, silicon nitride, and silicon oxynitride.

[0166] refer to Fig. 7A In an embodiment, a sub-capping layer 900P may be disposed between the color filter layer CFL and the protective layer 900. The first groove GV1 of the protective layer 900 may expose the top surface of the sub-capping layer 900P. The thickness of the sub-capping layer 900P may be less than the thickness of the protective layer 900. The sub-capping layer 900P may overlap with the first groove GV1, and thus, the sub-capping layer 900P may prevent the top surface of the color filter layer CFL from being exposed through the first groove GV1.

[0167] refer to Figure 7B In an embodiment, a sub-capping layer 900Q may be disposed on the protective layer 900. At least a portion of the sub-capping layer 900Q may be buried in (or disposed in) the first groove GV1. The sub-capping layer 900Q may prevent the top surface of the color filter layer CFL from being exposed through the first groove GV1, and may also flatten the unevenness of the top surface of the capping layer 900 formed by the first groove GV1, thereby improving the reliability of the display device 1. For example, the sub-capping layer 900Q may prevent the layers stacked on the protective layer 900 from warping or becoming peeled off due to the unevenness caused by the first groove GV1.

[0168] Sub-cap layer 900Q can be compared with the reference Figure 5The capping layer described above and disposed on the protective layer 900 in the display area DA is formed together. For example, the sub-capping layer 900Q may be formed without an additional process.

[0169] although Figure 7B It is shown that the sub-capping layer 900Q is formed with a thickness greater than that of the protective layer 900 to completely fill the first groove GV1 and cover the top surface of the protective layer 900, but the embodiment is not limited thereto. For example, the sub-capping layer 900Q may be formed with a thickness not greater than that of the protective layer 900, and thus, the sub-capping layer 900Q may be arranged only in the first groove GV1 or may fill only the first groove GV1 to a certain height.

[0170] Figure 8 1 is a schematic cross-sectional view schematically showing a portion of a non-display area NDA of a display device 1 according to an embodiment. Figure 8 In, with Fig. 6A The same reference numerals as in the drawings denote the same components, and therefore, their description will not be given repeatedly.

[0171] refer to Figure 8 , the first groove GV1a provided in the protective layer 900a may include a groove obtained by removing a portion of the protective layer 900a in a direction toward the substrate 100. For example, a depth D of the first groove GV1a may be less than a thickness H of the protective layer 900a. The depth D of the first groove GV1a may be at least about 0.4 times the thickness H of the protective layer 900a. The first groove GV1a may be formed by a half-tone mask process.

[0172] and Fig. 6A Unlike the embodiment shown in , since the first groove GV1a is provided as a groove that is not a through hole (opening), the first groove GV1a may not expose the top surface of the layer disposed under the protective layer 900a. For example, the bottom surface of the protective layer 900a covers the entire area of ​​the top surface of the color filter layer CFL, and therefore, the display device 1 has improved reliability and the bonding force between the protective layer 900a and the color filter layer CFL can be enhanced.

[0173] Fig. 9A and Fig. 9B 1 and 2 are schematic cross-sectional views and plan views schematically showing a portion of a display area DA of a display device 1' according to an embodiment, respectively. Fig. 9A and Fig. 9B In, with Figure 5 The same reference numerals as in the reference numerals in the drawings denote the same components, and therefore, their description will not be given repeatedly. Fig. 9A and Fig. 9B The described embodiments can be implemented independently or in combination with the reference FIG. 6A to FIG. 8The described embodiments are implemented in combination.

[0174] In an embodiment, a plurality of second grooves GV2 arranged in the display area DA may be provided in the protective layer 900'. Figure 7B The described sub-cover layer 900Q may extend to the display area DA and may fill the second groove GV2. The second groove GV2 may include a through hole or a groove obtained by removing a portion of the protective layer 900' in a thickness direction (e.g., z direction). The second groove GV2 may be formed by an optical process and / or a half-tone mask process.

[0175] In a plan view, a region of the protective layer 900' may include a grid pattern in which the second grooves GV2 are provided. Fig. 9B The second grooves GV2 are shown to have a rectangular shape with regular intervals, but the present disclosure is not limited thereto. In embodiments, the second grooves GV2 may be arranged at irregular and random intervals and may have a rectangular shape, other polygonal shapes, a circular shape, an elliptical shape, or an amorphous shape.

[0176] The second groove GV2 may be arranged in a non-emission region between the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3. In a plan view, the second groove GV2 may overlap at least any one of the first bank layer 215, the second bank layer 600, and the light blocking portion BP. In an embodiment, by arranging the second groove GV2 in the non-emission region, an influence on the light path may be prevented (for example, light emitted from the display element may be prevented from being refracted at the side surface of the protective layer 900' for defining the second groove GV2).

[0177] The center width W2 of the second groove GV2 may be smaller than the interval between the sub-pixels. The center width W2 of the second groove GV2 may be in the range of about 1 μm to about 100 μm. The center width W2 of the second groove GV2 may indicate a width in a plan view, and may also indicate a width passing through a center point of the second groove GV2.

[0178] In an embodiment, the protective layer 900 ′ disposed throughout the entire display device 1 ′ includes a second groove GV2 in the display area DA, and thus, the tensile strength of the entire area of ​​the display panel and the outer edge portion of the display device 1 ′ can be reduced and bending of the display panel can be prevented.

[0179] Reference above Figures 5 to 9B The structures of the display element layer DEL, the color filter layer CFL and the protective layer 900 or 900' described above can be applied to the case where Figure 2 and Figure 5The color conversion-transmission layer FNL shown in the figure is included in the display element layer DEL, but the present disclosure is not limited thereto. As an embodiment, the display element layer DEL of the display device 1 or 1' may include a light emitting diode configured to emit red light, green light, or blue light, and the color conversion-transmission layer FNL may be omitted. For example, in the case where the light emitting diodes are respectively configured to emit light of different colors, the color conversion-transmission layer FNL may be omitted. According to an embodiment, the display device 1 or 1' may include a display element layer DEL having the above reference 6A to 9B The protective layer 900 or 900' of the described structure is used to reduce defects caused by film peeling.

[0180] According to the embodiment, a reliable display device can be provided. However, the scope of the present disclosure is not limited thereto.

[0181] It should be understood that the embodiments described herein should be considered in a descriptive sense only and not for limiting purposes. The description of features or aspects within each embodiment should generally be considered applicable to other similar features or aspects in other embodiments. Although one or more embodiments have been described with reference to the accompanying drawings, it will be understood by those of ordinary skill in the art that various changes may be made thereto in form and detail without departing from the spirit and scope defined by the claims.

Claims

1. A display device, comprising: A substrate, comprising a display area and a non-display area surrounding the display area; A display element layer, disposed on the substrate and comprising at least one display element; An encapsulation layer, disposed on the display element layer and comprising at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color conversion-transmission layer disposed on the encapsulation layer and configured to convert light emitted from the at least one display element into light of another color; a color filter layer disposed on the color conversion-transmission layer; as well as A protection layer is disposed on the color filter layer and extends from the display area to the non-display area, wherein the protection layer includes a plurality of first grooves in the non-display area.

2. The display device according to claim 1, wherein: The bottom surface of the protection layer includes a concave surface corresponding to the convex surface included in the top surface of the color filter layer.

3. The display device according to claim 1, wherein: The protection layer directly contacts the color filter layer and covers an edge of the color filter layer.

4. The display device according to claim 1, wherein: The plurality of first grooves expose at least a portion of a top surface of the color filter layer.

5. The display device according to claim 1, wherein: A central width of each of the plurality of first grooves is in a range of 1 μm to 100 μm.

6. The display device according to claim 1, wherein: The protective layer includes an organic material.

7. The display device according to claim 1, wherein: The protective layer has a thickness sufficient to cover the color filter layer.

8. The display device according to claim 1, wherein: The thickness of the protective layer is in the range of 3 μm to 8 μm.

9. The display device according to any one of claims 1 to 8, further comprising: The sub-capping layer directly contacts the protection layer and overlaps the plurality of first grooves.

10. The display device according to any one of claims 1 to 8, further comprising: A first bank layer is disposed on the substrate, wherein the first bank layer includes an opening defining an emission region of the at least one display element, The protection layer further includes a plurality of second grooves disposed in the display area and overlapping with the first bank layer in a plan view.

11. The display device according to claim 10, wherein: The color conversion-transmission layer comprises: A color converter comprising a plurality of quantum dots; and a second bank layer surrounding the color converter, and The plurality of second grooves overlap with the second bank layer in the plan view.

12. The display device according to any one of claims 1 to 8, wherein The color filter layer includes a first color filter configured to transmit light of a first color, a second color filter configured to transmit light of a second color, a third color filter configured to transmit light of a third color, and a light blocking portion separating the first color filter, the second color filter, and the third color filter, and The light blocking portion includes at least two overlapping color layers selected from a first color layer, a second color layer, and a third color layer, wherein the first color layer, the second color layer, and the third color layer respectively include the same materials as those of the first color filter, the second color filter, and the third color filter.

13. The display device according to any one of claims 1 to 8, wherein: The encapsulation layer comprises: A first inorganic encapsulation layer, a first organic encapsulation layer, and a second inorganic encapsulation layer are sequentially stacked on each other, and The color conversion-transmission layer is in direct contact with the second inorganic encapsulation layer.

14. A display device, comprising: A substrate, comprising a display area and a non-display area surrounding the display area; A display element layer, disposed on the substrate and comprising at least one display element; An encapsulation layer, disposed on the display element layer and comprising at least one inorganic encapsulation layer and at least one organic encapsulation layer; a color filter layer disposed on the encapsulation layer and including a first color filter configured to transmit light of a first color, a second color filter configured to transmit light of a second color, a third color filter configured to transmit light of a third color, and a light blocking portion separating the first color filter, the second color filter, and the third color filter; as well as The protective layer is composed of an organic material and is disposed on the color filter layer to cover an edge of the color filter layer, wherein the protective layer includes a plurality of grooves.

15. The display device according to claim 14, wherein The center width of each of the plurality of grooves is in the range of 1 μm to 100 μm, and The plurality of grooves expose at least a portion of a top surface of the color filter layer.

16. The display device according to claim 14, wherein: The plurality of grooves include a plurality of first grooves in the non-display area and a plurality of second grooves in the display area at least partially overlapping the light blocking portion.

17. The display device according to claim 14, wherein The light blocking portion includes a first color layer, a second color layer, and a third color layer that overlap each other, and The first color layer, the second color layer, and the third color layer include the same materials as those of the first color filter, the second color filter, and the third color filter, respectively.

18. The display device according to claim 17, wherein: The bottom surface of the protection layer includes a concave surface corresponding to the convex surface included in the top surface of the color filter layer.

19. The display device according to claim 14, wherein: The thickness of the protective layer is in the range of 3 μm to 8 μm.

20. The display device according to any one of claims 14 to 19, further comprising: A sub-covering layer extends from the display area to the non-display area, and the sub-covering layer is disposed in the plurality of grooves.

Citation Information

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