Evaporation device
By designing an evaporation device including multiple deposition sources and nozzles, ensuring that the mixing ratio of the main body and the dopant on the substrate is constant, the problem that the mixing ratio in the prior art is difficult to maintain a constant, and the characteristic consistency of the emission layer and the reliability of the pixel are improved.
Patent Information
- Application Number
- CN202411190591.3
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Priority Date
- 2023-09-08
- Filing Date
- 2024-08-28
- Publication Date
- 2025-03-11
AI Technical Summary
When forming the emission layer of the organic light emitting diode display, the mixing ratio between the main body and the dopant is difficult to maintain constant, resulting in inconsistent characteristics of the emission layer.
An evaporation device is designed, including a plurality of deposition sources and nozzles, and through the structure of the pipe and the passage, the mixing ratio of the body and dopant on the substrate is constant.
When forming the emission layer on the substrate, the mixing ratio between the main body and the dopant is maintained constant, thereby improving the characteristic consistency of the emission layer and the reliability of the pixels.
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Figure CN119592916A_ABST
Abstract
Description
[0001] This application claims priority to and the benefit of Korean Patent Application No. 10-2023-0119459 filed in the Korean Intellectual Property Office on September 8, 2023, the entire contents of which are incorporated herein by reference. Technical Field
[0002] Embodiments described herein relate to an evaporation device. Background Art
[0003] Organic light emitting diode displays (OLEDs) with excellent brightness characteristics and viewing angle characteristics have attracted attention as next-generation flat panel display devices. Organic light emitting diode displays can be made light and thin because a separate light source is not required. Organic light emitting diode displays have characteristics such as low power consumption, high brightness, and high response speed.
[0004] An organic light emitting diode display may include light emitting elements, each of which may include an anode, an emission layer, and a cathode. The emission layer may be disposed between the anode and the cathode. The emission layer receives holes from the anode and electrons from the cathode. The holes and electrons injected into the emission layer may combine to form excitons, and the light emitting element may emit light as the excitons transition to a ground state.
[0005] The evaporation device is used to form an emission layer on a substrate. Generally speaking, the emission layer is formed by mixing a host and a dopant. The evaporation device may include deposition sources filled with a host and a dopant, respectively. Each of the deposition sources may include a crucible filled with a deposition material (e.g., a host or a dopant) and a nozzle, and the deposition material is dispensed through the nozzle.
[0006] The host and the dopant are dispensed from a deposition source and deposited on a substrate. An emission layer is formed by mixing the host and the dopant in a selectable ratio. The mixing ratio between the host and the dopant must be constant over the entire substrate so that the emission layer formed on the substrate has the same characteristics. However, since the nozzles of the deposition source are spaced apart from each other, the mixing ratio between the host and the dopant may not be constant depending on the distribution of the deposition material dispensed from the deposition source.
[0007] It should be understood that the background section of the technology section is intended, in part, to provide a useful background for understanding the technology. However, the background section of the technology section may also include ideas, concepts or perceptions that were not known or understood by a person skilled in the relevant art before the corresponding effective filing date of the subject matter disclosed herein. Summary of the invention
[0008] Each embodiment provides an evaporation apparatus for providing deposition materials on a substrate such that a mixing ratio between the deposition materials is constant.
[0009] According to one embodiment, an evaporation device may include: a first deposition source; a second deposition source, which is arranged in a first direction together with the first deposition source; a main body component, which is spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, and includes a first part and a second part arranged in the second direction; a nozzle main body component, which is arranged on the main body component; a first tube, which is connected to a side surface of the first deposition source facing the main body component and the nozzle main body component and a lower end of the first part; a second tube, which is connected to a side surface of the second deposition source facing the main body component and the nozzle main body component and a lower end of the second part; a first nozzle, which protrudes upward from the nozzle main body component; and a second nozzle, which protrudes upward from the nozzle main body component.
[0010] The first nozzle and the second nozzle may be disposed in the first direction.
[0011] The evaporation device may include: a first tube channel defined in a first tube; and a first channel defined in a first portion continuous with the first tube channel; and a second tube channel defined in a second tube; and a second channel defined in a second portion continuous with the second tube channel.
[0012] The evaporation device may include a first nozzle channel and a second nozzle channel defined in the nozzle body member continuous with the first channel, and a first opening defined in the first nozzle continuous with the first nozzle channel, and a second opening defined in the second nozzle continuous with the second nozzle channel.
[0013] The first tube may include: a first-first tube connected to the upper portion of the side surface of the first deposition source and extending downward; and a first-second tube connected to the lower portion of the first-first tube and the lower end of the first portion, and the second tube may include: a second-first tube connected to the upper portion of the side surface of the second deposition source and extending downward; and a second-second tube connected to the lower portion of the second-first tube and the lower end of the second portion.
[0014] The evaporation device may further include: a third deposition source; and a fourth deposition source, which is arranged together with the third deposition source in the first direction, wherein the third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and the main body part and the nozzle main body part are arranged between the first deposition source and the second deposition source and the third deposition source and the fourth deposition source.
[0015] Different deposition materials may be accommodated in the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source, respectively.
[0016] The evaporation device may further include: a third tube connected to a side surface of a third deposition source facing the main body part and the nozzle main body part and a lower end of the main body part; a fourth tube connected to a side surface of a fourth deposition source facing the main body part and the nozzle main body part and a lower end of the main body part; a third nozzle protruding upward from the nozzle main body part; and a fourth nozzle protruding upward from the nozzle main body part.
[0017] The third nozzle and the fourth nozzle may be disposed in the first direction and disposed adjacent to the first nozzle and the second nozzle in the second direction, respectively.
[0018] The third nozzle and the fourth nozzle may directly contact the first nozzle and the second nozzle, respectively, in the second direction.
[0019] The body member may further include a third portion and a fourth portion disposed in the second direction together with the first portion and the second portion, and the third tube may be connected to a lower end of the third portion, and the fourth tube may be connected to a lower end of the fourth portion.
[0020] The evaporation device may include: a third tube channel defined in a third tube; and a third channel defined in a third portion and continuous with the third tube channel; a fourth tube channel defined in a fourth tube; and a fourth channel defined in a fourth portion and continuous with the fourth tube channel; a third nozzle channel defined in a nozzle body component and continuous with the third channel and a fourth nozzle channel continuous with the fourth channel; a third opening defined in a third nozzle and continuous with the third nozzle channel and a fourth opening defined in a fourth nozzle and continuous with the fourth nozzle channel.
[0021] The first nozzle, the second nozzle, the third nozzle, and the fourth nozzle may be disposed in the first direction.
[0022] The evaporation device may further include: a fifth deposition source spaced apart from the first and second deposition sources in the second direction; and a fifth nozzle connected to an upper end of the fifth deposition source, wherein the first and second deposition sources are disposed between the body part and the fifth deposition source.
[0023] The evaporation device may further include: a third deposition source, arranged in the first direction together with the first deposition source and the second deposition source; a third tube, connected to the third deposition source and a third portion of the main body component; a third nozzle, protruding upward from the nozzle main body component; a fourth deposition source, spaced apart from the nozzle main body component in the second direction; and a plurality of fourth nozzles, connected to an upper end of the fourth deposition source and arranged in the first direction, wherein the main body component is arranged between the first deposition source, the second deposition source, the third deposition source and the fourth deposition source.
[0024] The first nozzle, the second nozzle, and the third nozzle may be disposed in the first direction, and the plurality of fourth nozzles may be obliquely disposed to face the first nozzle, the second nozzle, and the third nozzle.
[0025] The evaporation device may further include: a third deposition source; a fourth deposition source; a third tube connected to the third deposition source and the main body; a fourth tube connected to the fourth deposition source and the main body; a third nozzle protruding upward from the nozzle main body; and a fourth nozzle protruding upward from the nozzle main body, wherein the first deposition source, the second deposition source, the third deposition source and the fourth deposition source are arranged in the first direction.
[0026] The evaporation device may further include: a third deposition source; a fourth deposition source, arranged in the first direction together with the third deposition source; a third tube, connected to the third deposition source; a fourth tube, connected to the fourth deposition source; and a third nozzle and a fourth nozzle, arranged in the first direction, wherein the main body part may include: a first main body part, connected to the first tube and the second tube; and a second main body part, connected to the third tube and the fourth tube, and the nozzle main body part may include: a first nozzle main body part, the first nozzle and the second nozzle protrude from the first nozzle main body part, the first nozzle main body part is arranged on the first main body part; and a second nozzle main body part, arranged on the second main body part, the third nozzle and the fourth nozzle protrude upward from the second nozzle main body part, and the first main body part is arranged between the first deposition source and the second deposition source and the second main body part in the second direction, and the second main body part is arranged between the first main body part and the third deposition source and the fourth deposition source in the second direction.
[0027] The first and second nozzles and the third and fourth nozzles may be obliquely disposed to face each other.
[0028] According to one embodiment, an evaporation device may include: a first deposition source; a second deposition source, which is arranged in a first direction together with the first deposition source; a first nozzle; a main body component, which is spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, and may include: a first part, which has a first channel defined in the first part; and a second part, which has a second channel defined in the second part; a first tube, which is connected to a side surface of the first deposition source facing the main body component and a lower part of the main body component, the first tube having a first tube channel continuous with the first channel; a second tube, which is connected to a side surface of the second deposition source facing the main body component and a lower part of the main body component, the second tube having a second tube channel continuous with the second channel; a nozzle main body component, which is arranged on the main body component and has a first nozzle channel continuous with the first channel and a second nozzle channel continuous with the second channel; a first nozzle, which protrudes upward from the nozzle main body component and has a first opening continuous with the first nozzle channel; and a second nozzle, which protrudes upward from the nozzle main body component and has a second opening continuous with the second nozzle channel.
[0029] According to an embodiment, an evaporation device may include: a first deposition source; a second deposition source, arranged in a first direction together with the first deposition source; a third deposition source, spaced apart from the first deposition source in a second direction intersecting the first direction; a fourth deposition source, spaced apart from the second deposition source in the second direction and arranged in the first direction together with the third deposition source; a main body component, arranged between the first deposition source and the second deposition source and the third deposition source and the fourth deposition source; a plurality of tubes, respectively connected to the first deposition source, the second deposition source, the third deposition source and the fourth deposition source, and connected to the main body component; a nozzle main body component, arranged on the main body component; and a first nozzle, a second nozzle, a third nozzle and a fourth nozzle protruding upward from the nozzle main body component. The first nozzle and the second nozzle are arranged in the first direction, and the third nozzle and the fourth nozzle are arranged in the first direction and are adjacent to the first nozzle and the second nozzle in the second direction. BRIEF DESCRIPTION OF THE DRAWINGS
[0030] The above and other objects and features of the present disclosure will become apparent by describing in detail embodiments of the present disclosure with reference to the accompanying drawings, in which:
[0031] Figure 1 is a schematic perspective view of an evaporation device according to an embodiment.
[0032] Figure 2 For viewing from above Figure 1 Schematic plan view of the evaporation device illustrated in FIG.
[0033] Figure 3 When looking in the first direction Figure 1 The first deposition source and the third deposition source illustrated in FIG. 1 are side views of the evaporation device.
[0034] Figure 4 When looking in the first direction Figure 1 The second deposition source and the fourth deposition source illustrated in FIG. 1 are side views of the evaporation device.
[0035] Figure 5 For Figure 2 The schematic plan view is illustrated by a dotted line. Figure 3 and Figure 4 View of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG.
[0036] Figure 6 For separate examples Figure 5 Schematic plan views of an exemplary first-second tube, second-second tube, third-second tube, and fourth-second tube.
[0037] Figure 7 For along Figure 5 A cross-sectional view taken along line II' illustrated in FIG.
[0038] Figure 8 For along Figure 5 A cross-sectional view taken along line II-II' illustrated in FIG.
[0039] Fig. 9 For along Figure 5 A cross-sectional view taken along line III-III' illustrated in FIG.
[0040] Fig.10 For along Figure 5 A cross-sectional view taken along line IV-IV' illustrated in FIG.
[0041] Fig.11 For along Figure 5 A cross-sectional view taken along line VV' illustrated in FIG.
[0042] Fig.12 For along Fig.10 A cross-sectional view taken along line VI-VI' illustrated in FIG.
[0043] Fig.13 For along Fig.11 A cross-sectional view taken along line VII-VII' illustrated in FIG.
[0044] Fig.14 For explanation purposes Figure 1 Schematic diagram of a deposition process in an evaporation apparatus illustrated in FIG.
[0045] Fig.15 As an example, the Figure 1 FIG. 4 is a cross-sectional view of a pixel of an emission layer formed by an evaporation apparatus illustrated in FIG.
[0046] Fig.16 For explanation purposes Fig.14 FIG. 4 is a view of a process of forming an emission layer using an evaporation apparatus illustrated in FIG.
[0047] Fig.17 Example from having Figure 1 Different configurations of the evaporation device are illustrated in FIG. 1 and FIG. 2 , and a dashed line diagram depicting the distribution of the deposited material is shown.
[0048] Fig.18 Example from Figure 1 The nozzle of the evaporation device illustrated in FIG. 1 dispenses deposition material onto a substrate and a dashed line graph depicting the distribution of the deposition material.
[0049] Fig.19 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0050] Figure 20 to Figure 23 As an example, Fig.19A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when looking in the first direction.
[0051] Figure 24 to Figure 27 As an example, Fig.19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when looking in the second direction in FIG.
[0052] Fig.28 is a view illustrating a configuration of an evaporation device according to an embodiment.
[0053] Fig.29 To be able to use Fig.28 A cross-sectional view of a light-emitting element formed by the evaporation apparatus illustrated in FIG.
[0054] Fig.30 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0055] Fig.31 For along Fig.30 A cross-sectional view taken along line VIII-VIII' illustrated in FIG.
[0056] Figure 32 to Figure 34 As an example, Fig.30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when looking in the first direction.
[0057] Figure 35 to Figure 37 As an example, Fig.30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when looking in the second direction.
[0058] Fig.38 As an example, the deposited material is Fig.30 FIG. 4 is a diagram illustrating a distribution of an evaporation device onto a substrate.
[0059] Fig.39 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0060] Fig.40 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0061] Fig.41 As an example, the deposited material is Fig.40 FIG. 4 is a diagram illustrating a distribution of an evaporation device onto a substrate.
[0062] Fig.42 FIG. 1 is a view illustrating that a deposition material is dispensed onto a substrate from an evaporation device according to an embodiment. DETAILED DESCRIPTION
[0063] The present disclosure will now be described more fully hereinafter with reference to the accompanying drawings, in which various embodiments are shown. However, the present disclosure may be embodied in different forms and should not be construed as being limited to the embodiments set forth herein. On the contrary, these embodiments are provided so that the present disclosure will be thorough and complete, and will fully convey the scope of the present disclosure to those skilled in the art.
[0064] In this specification, when a component (or region, layer, part, etc.) is referred to as being "on", "connected to" or "coupled to" another component, this means that the component may be directly on, connected to or coupled to the other component, or a third component or other components may be present between them.
[0065] The same reference numerals refer to the same components. In addition, in the drawings, the thickness, ratio and size of components may be exaggerated for efficient description.
[0066] In the specification and claims, for the purpose of its meaning and interpretation, the term "and / or" is intended to include any combination of the terms "and" and "or". For example, "A and / or B" may be understood to mean "A, B, or A and B". The terms "and" and "or" may be used in a connecting sense or a separating sense and may be understood to be equivalent to "and / or".
[0067] In the specification and claims, for the purpose of its meaning and interpretation, the phrase "at least one of..." is intended to include the meaning of "at least one selected from the group." For example, "at least one of A and B" can be understood to mean "A, B, or A and B."
[0068] Terms such as first, second, etc. may be used to describe various components, but the components should not be limited by these terms. Terms may only be used to distinguish one component from other components. For example, a first component may be referred to as a second component, and similarly, a second component may also be referred to as a first component without departing from the scope of the present disclosure.
[0069] As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.
[0070] In addition, terms such as "below", "below", "above", and "above" are used to describe the relationship of components illustrated in the drawings. These terms are relative concepts and are described based on the directions illustrated in the drawings.
[0071] The term "overlap" or "overlapped" means that a first object may be on the top or bottom or side surface of a second object, and vice versa. In addition, the term "overlap" may include layer, stack, facing or facing, extending over, covering or partially covering, or any other suitable term that can be appreciated and understood by a person of ordinary skill in the art.
[0072] When an element is described as “not overlapping” or “so as not to overlap” another element, this may include the elements being spaced apart, offset, or separated from each other, or any other suitable terminology that one of ordinary skill in the art would appreciate and understand.
[0073] The terms "facing" and "facing" mean that the first element may be directly or indirectly opposite to the second element. In the case where a third element is interposed between the first and second elements, the first and second elements may be understood to be indirectly opposite to each other, although still facing each other.
[0074] As used herein, "about" or "approximately" includes the stated value and means within an acceptable range of deviation of the stated value determined by one of ordinary skill in the art taking into account the measurement in question and the errors associated with the measurement of the particular quantity (i.e., the limitations of the measurement system). For example, "about" can mean within one or more standard deviations, or within ±30%, ±20%, ±10%, ±5% of the stated value.
[0075] Unless otherwise defined, all terms (including technical or scientific terms) used in this article have the same meaning as those commonly understood by those skilled in the art to which the present disclosure belongs. These terms, such as those defined in commonly used dictionaries, should be interpreted as having the same meaning as the contextual meaning in the relevant technical field, and should not be interpreted as having an ideal or overly formal meaning unless explicitly defined as having such a meaning in this application.
[0076] It should be understood that terms such as "includes," "comprising," and "having" and variations thereof when used herein indicate the presence of stated features, quantities, steps, operations, components, parts, or a combination thereof, but do not preclude the presence or addition of one or more other features, quantities, steps, operations, components, parts, or a combination thereof.
[0077] Hereinafter, various embodiments will be described with reference to the accompanying drawings.
[0078] Figure 1 is a schematic perspective view of an evaporation device according to an embodiment. Figure 2 For viewing from above Figure 1 Schematic plan view of the evaporation device illustrated in FIG.
[0079] refer to Figure 1 and Figure 2 , an evaporation apparatus DPA according to an embodiment may include a plurality of deposition sources SC1 ˜ SC4 , a body part BDP, a nozzle part NZP, and a plurality of pipes PP1 ˜ PP4 .
[0080] Different deposition materials may be contained in the deposition sources SC1 ˜ SC4 . The deposition materials may include a host and a dopant. The deposition sources SC1 ˜ SC4 may include a first deposition source SC1 , a second deposition source SC2 , a third deposition source SC3 , and a fourth deposition source SC4 .
[0081] The first deposition source SC1 and the second deposition source SC2 may be arranged (or disposed) in the first direction DR1. The third deposition source SC3 and the fourth deposition source SC4 may be arranged in the first direction DR1. The third deposition source SC3 and the fourth deposition source SC4 may be spaced apart from the first deposition source SC1 and the second deposition source SC2 in the second direction DR2 intersecting the first direction DR1. The third deposition source SC3 may be spaced apart from the first deposition source SC1 in the second direction DR2. The fourth deposition source SC4 may be spaced apart from the second deposition source SC2 in the second direction DR2.
[0082] Each of the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4 may include a body SD and a cover CV coupled or connected to an upper end of the body SD. Each of the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4 may have a receiving space defined therein. The body SD and the cover CV may be coupled or connected to each other to define a receiving space in each of the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4.
[0083] Different deposition materials may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4, respectively. For example, the first main body may be contained in the first deposition source SC1, the first dopant may be contained in the second deposition source SC2, the second dopant may be contained in the third deposition source SC3, and the second main body may be contained in the fourth deposition source SC4.
[0084] However, without being limited thereto, various deposition materials may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4. For example, one main body and three dopants may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4, or three main bodies and one dopant may be contained in the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4.
[0085] Hereinafter, a direction intersecting a plane defined by the first direction DR1 and the second direction DR2 is defined as a third direction DR3. The third direction DR3 may be substantially perpendicular to the plane defined by the first direction DR1 and the second direction DR2. As used herein, the expression "when viewed from above a plane" may mean viewed in the third direction DR3.
[0086] When viewed from above a plane, the body part BDP and the nozzle part NZP may be spaced apart from the first and second deposition sources SC1 and SC2 in the second direction DR2. When viewed from above a plane, the body part BDP and the nozzle part NZP may be spaced apart from the third and fourth deposition sources SC3 and SC4 in the second direction DR2. The body part BDP and the nozzle part NZP may be disposed between the first and second deposition sources SC1 and SC2 and the third and fourth deposition sources SC3 and SC4.
[0087] The nozzle part NZP may include a nozzle body part NBD disposed on the body part BDP and a plurality of nozzles NZ disposed on the nozzle body part NBD. The nozzle body part NBD may be connected to the upper end of the body part BDP. The nozzle NZ may protrude upward (for example, in the third direction DR3) from the upper end of the nozzle body part NBD. In one embodiment, the nozzle NZ may be manufactured separately and may be connected to the upper end of the nozzle body part NBD. However, not limited to this, the nozzle NZ may be integrated with the nozzle body part NBD.
[0088] The nozzles NZ may include a plurality of first nozzles NZ1 , a plurality of second nozzles NZ2 , a plurality of third nozzles NZ3 , and a plurality of fourth nozzles NZ4 .
[0089] The first nozzle NZ1 and the second nozzle NZ2 may protrude upward from an upper end of the nozzle body part NBD. The first nozzle NZ1 and the second nozzle NZ2 may be adjacent to the first deposition source SC1 and the second deposition source SC2. The first nozzle NZ1 and the second nozzle NZ2 may be arranged in the first direction DR1. The first nozzle NZ1 may alternate with the second nozzle NZ2 in the first direction DR1.
[0090] The third nozzle NZ3 and the fourth nozzle NZ4 may protrude upward from the upper end of the nozzle body part NBD. The third nozzle NZ3 and the fourth nozzle NZ4 may be adjacent to the third deposition source SC3 and the fourth deposition source SC4. The third nozzle NZ3 and the fourth nozzle NZ4 may be arranged in the first direction DR1. The third nozzle NZ3 may alternate with the fourth nozzle NZ4 in the first direction DR1.
[0091] The third nozzle NZ3 and the fourth nozzle NZ4 may be adjacent to the first nozzle NZ1 and the second nozzle NZ2 in the second direction DR2, respectively. Specifically, each third nozzle NZ3 may be disposed adjacent to each first nozzle NZ1 in the second direction DR2, respectively. Each fourth nozzle NZ4 may be disposed adjacent to each second nozzle NZ2 in the second direction DR2, respectively.
[0092] The third nozzle NZ3 and the fourth nozzle NZ4 may be in direct contact with the first nozzle NZ1 and the second nozzle NZ2 in the second direction DR2, respectively. Specifically, each third nozzle NZ3 may be in direct contact with each first nozzle NZ1 in the second direction DR2, respectively. Each fourth nozzle NZ4 may be in direct contact with each second nozzle NZ2 in the second direction DR2, respectively.
[0093] The tubes PP1 ˜ PP4 may include a first tube PP1 connected to the first deposition source SC1 , a second tube PP2 connected to the second deposition source SC2 , a third tube PP3 connected to the third deposition source SC3 , and a fourth tube PP4 connected to the fourth deposition source SC4 .
[0094] The first tube PP1 may be connected to a side surface of the first deposition source SC1 facing the body part BDP and the nozzle body part NBD. The second tube PP2 may be connected to a side surface of the second deposition source SC2 facing the body part BDP and the nozzle body part NBD. The third tube PP3 may be connected to a side surface of the third deposition source SC3 facing the body part BDP and the nozzle body part NBD. The fourth tube PP4 may be connected to a side surface of the fourth deposition source SC4 facing the body part BDP and the nozzle body part NBD.
[0095] The first tube PP1, the second tube PP2, the third tube PP3 and the fourth tube PP4 may be connected to the body part BDP. The first tube PP1, the second tube PP2, the third tube PP3 and the fourth tube PP4 may extend under the body part BDP and may be connected to the body part BDP. This configuration will be described in detail below.
[0096] Figure 3 When looking in the first direction Figure 1 The illustrated first deposition source and the third deposition source are side views of the evaporation apparatus. Figure 4 When looking in the first direction Figure 1 The second deposition source and the fourth deposition source illustrated in FIG. 1 are side views of the evaporation device.
[0097] refer to Figure 3 and Figure 4, the first tube PP1 may be connected to the side surface of the first deposition source SC1. The first tube PP1 may extend under the body part BDP and may be connected to the lower end of the body part BDP. The second tube PP2 may be connected to the side surface of the second deposition source SC2. The second tube PP2 may extend under the body part BDP and may be connected to the lower end of the body part BDP.
[0098] The third pipe PP3 may be connected to a side surface of the third deposition source SC3. The third pipe PP3 may extend under the body part BDP and may be connected to the lower end of the body part BDP. The fourth pipe PP4 may be connected to a side surface of the fourth deposition source SC4. The fourth pipe PP4 may extend under the body part BDP and may be connected to the lower end of the body part BDP.
[0099] The first tube PP1 may include a first-first tube PP1-1 connected to the side surface of the first deposition source SC1 and a first-second tube PP1-2 connected to the lower end of the body part BDP. The first-first tube PP1-1 may be connected to an upper portion (e.g., cover CV) of the side surface of the first deposition source SC1 and may extend downward. The first-second tube PP1-2 may be connected to a lower portion of the first-first tube PP1-1. The first-second tube PP1-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.
[0100] The second tube PP2 may include a second-first tube PP2-1 connected to the side surface of the second deposition source SC2 and a second-second tube PP2-2 connected to the lower end of the body part BDP. The second-first tube PP2-1 may be connected to an upper portion (e.g., cover CV) of the side surface of the second deposition source SC2 and may extend downward. The second-second tube PP2-2 may be connected to a lower portion of the second-first tube PP2-1. The second-second tube PP2-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.
[0101] The third tube PP3 may include a third-first tube PP3-1 connected to the side surface of the third deposition source SC3 and a third-second tube PP3-2 connected to the lower end of the body part BDP. The third-first tube PP3-1 may be connected to an upper portion (e.g., cover CV) of the side surface of the third deposition source SC3 and may extend downward. The third-second tube PP3-2 may be connected to the lower portion of the third-first tube PP3-1. The third-second tube PP3-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.
[0102] The fourth tube PP4 may include a fourth-first tube PP4-1 connected to the side surface of the fourth deposition source SC4 and a fourth-second tube PP4-2 connected to the lower end of the body part BDP. The fourth-first tube PP4-1 may be connected to the upper portion (e.g., cover CV) of the side surface of the fourth deposition source SC4 and may extend downward. The fourth-second tube PP4-2 may be connected to the lower portion of the fourth-first tube PP4-1. The fourth-second tube PP4-2 may be disposed below the body part BDP and may be connected to the lower end of the body part BDP.
[0103] Upper portions of side surfaces of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may be defined by side surfaces of covers CV of the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4, respectively.
[0104] In the following, reference will be made to Figure 5 and Figure 6 The planar structures of the first-second tube PP1-2, the second-second tube PP2-2, the third-second tube PP3-2, and the fourth-second tube PP4-2 are described in detail.
[0105] Figure 5 For Figure 2 The schematic plan view is illustrated by dashed lines. Figure 3 and Figure 4 View of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG. Figure 6 For separate examples Figure 5 Schematic plan view of the first-second tube, second-second tube, third-second tube and fourth-second tube illustrated in FIG.
[0106] refer to Figure 5 and Figure 6 When viewed from above the plane, the first tube PP1 and the second tube PP2 may be adjacent to the first deposition source SC1 and the second deposition source SC2, respectively, in the second direction DR2. When viewed from above the plane, the third tube PP3 and the fourth tube PP4 may be adjacent to the third deposition source SC3 and the fourth deposition source SC4, respectively, in the second direction DR2.
[0107] The first tube PP1 and the second tube PP2 may be adjacent to each other in the first direction DR1 when viewed from above a plane. The third tube PP3 and the fourth tube PP4 may be adjacent to each other in the first direction DR1 when viewed from above a plane.
[0108] The first-second tube PP1-2 and the second tube PP2-2 may be arranged in the first direction DR1 and may be disposed to face each other in the first direction DR1. The third-second tube PP3-2 and the fourth-second tube PP4-2 may be arranged in the first direction DR1 and may be disposed to face each other in the first direction DR1.
[0109] When viewed from above a plane, the first-second tube PP1-2 and the second-second tube PP2-2 may have a quadrilateral shape. In the second direction DR2, the length of the second-second tube PP2-2 may be longer than the length of the first-second tube PP1-2. It should be understood that the shapes of the tubes are not limited to those disclosed herein, and may also include shapes substantially the same as those disclosed herein.
[0110] When viewed from above a plane, the third-second tube PP3-2 and the fourth-second tube PP4-2 may have a quadrilateral shape. In the second direction DR2, the length of the third-second tube PP3-2 may be longer than that of the fourth-second tube PP4-2.
[0111] The first-second tube PP1-2 and the third-second tube PP3-2 may be arranged between the first deposition source SC1 and the third deposition source SC3 in the second direction DR2. According to this structure, the side surfaces of the first-second tube PP1-2 and the third-second tube PP3-2 may be Figure 3 exemplified in a side view of .
[0112] The second-second tube PP2-2 and the fourth-second tube PP4-2 may be arranged between the second deposition source SC2 and the fourth deposition source SC4 in the second direction DR2. According to this structure, the side surfaces of the second-second tube PP2-2 and the fourth-second tube PP4-2 may be Figure 4 exemplified in a side view of .
[0113] The opening OP may be defined in the first-second tube PP1-2, the second-second tube PP2-2, the third-second tube PP3-2, and the fourth-second tube PP4-2, respectively. The opening OP may be defined to face the body part BDP. The opening OP may have a quadrilateral shape.
[0114] Figure 7 For along Figure 5 A cross-sectional view taken along line II' illustrated in FIG. Figure 8 For along Figure 5 A cross-sectional view taken along line II-II' illustrated in FIG.
[0115] refer to Figure 7 and Figure 8The body part BDP may include a first portion PT1, a second portion PT2, a third portion PT3, and a fourth portion PT4 arranged in the second direction DR2. The nozzle body part NBD may be disposed on the first portion PT1, the second portion PT2, the third portion PT3, and the fourth portion PT4.
[0116] The first-second tube PP1-2 may be disposed under the first portion PT1 and may be connected to the first portion PT1. The second-second tube PP2-2 may be disposed under the first portion PT1 and the second portion PT2 and may be connected to the first portion PT1 and the second portion PT2.
[0117] The third-second pipe PP3-2 may be disposed under the third portion PT3 and the fourth portion PT4 and may be connected to the third portion PT3 and the fourth portion PT4. The fourth-second pipe PP4-2 may be disposed under the fourth portion PT4 and may be connected to the fourth portion PT4.
[0118] The first deposition material DM1 may be accommodated in a first receiving space AS1 defined in the first deposition source SC1. The second deposition material DM2 may be accommodated in a second receiving space AS2 defined in the second deposition source SC2. The third deposition material DM3 may be accommodated in a third receiving space AS3 defined in the third deposition source SC3. The fourth deposition material DM4 may be accommodated in a fourth receiving space AS4 defined in the fourth deposition source SC4.
[0119] The first deposition material DM1 may include a first host, and the second deposition material DM2 may include a first dopant. The third deposition material DM3 may include a second dopant, and the fourth deposition material DM4 may include a second host.
[0120] Although not illustrated, the first, second, third, and fourth deposition sources SC1, SC2, SC3, and SC4 may include heat sources for heating and evaporating the first, second, third, and fourth deposition materials DM1, DM2, DM3, and DM4.
[0121] The first tube passage PI1 may be defined in the first tube PP1, and the second tube passage PI2 may be defined in the second tube PP2. The third tube passage PI3 may be defined in the third tube PP3, and the fourth tube passage PI4 may be defined in the fourth tube PP4.
[0122] The first tube passage PI1 may be defined to be continuous with the first receiving space AS1. The second tube passage PI2 may be defined to be continuous with the second receiving space AS2. The third tube passage PI3 may be defined to be continuous with the third receiving space AS3. The fourth tube passage PI4 may be defined to be continuous with the fourth receiving space AS4.
[0123] The first passage P1 may be defined in the first portion PT1, and the second passage P2 may be defined in the second portion PT2. The third passage P3 may be defined in the third portion PT3, and the fourth passage P4 may be defined in the fourth portion PT4. The first passage P1, the second passage P2, the third passage P3, and the fourth passage P4 may extend in the third direction DR3.
[0124] The first passage P1 may be defined as continuous with the first tube passage PI1. The second passage P2 may be defined as continuous with the second tube passage PI2. The third passage P3 may be defined as continuous with the third tube passage PI3. The fourth passage P4 may be defined as continuous with the fourth tube passage PI4.
[0125] Figure 6 The opening OP illustrated in the figure may be defined in upper portions of the first-second tube PP1-2, the second-second tube PP2-2, the third-second tube PP3-2, and the fourth-second tube PP4-2. The first to fourth passages P1~P4 may be defined to be continuous with the first to fourth tube passages PI1~PI4 through the opening OP.
[0126] The first nozzle passage NP1, the second nozzle passage NP2, the third nozzle passage NP3, and the fourth nozzle passage NP4 may be defined in the nozzle body part NBD. The first nozzle passage NP1 may be defined to be continuous with the first passage P1, and the second nozzle passage NP2 may be defined to be continuous with the second passage P2. The third nozzle passage NP3 may be defined to be continuous with the third passage P3, and the fourth nozzle passage NP4 may be defined to be continuous with the fourth passage P4.
[0127] The first deposition material DM1 may be evaporated in the first deposition source SC1, and the evaporated first deposition material DM1 may move through the first tube passage PI1, the first passage P1, and the first nozzle passage NP1. The second deposition material DM2 may be evaporated in the second deposition source SC2, and the evaporated second deposition material DM2 may move through the second tube passage PI2, the second passage P2, and the second nozzle passage NP2.
[0128] The third deposition material DM3 may be evaporated in the third deposition source SC3, and the evaporated third deposition material DM3 may move through the third tube passage PI3, the third passage P3, and the third nozzle passage NP3. The fourth deposition material DM4 may be evaporated in the fourth deposition source SC4, and the evaporated fourth deposition material DM4 may move through the fourth tube passage PI4, the fourth passage P4, and the fourth nozzle passage NP4.
[0129] Fig. 9 For along Figure 5 A cross-sectional view taken along line III-III' illustrated in FIG.
[0130] For ease of description, Fig. 9The nozzle part NZP is omitted.
[0131] refer to Fig. 9 , the first-second tube PP1-2 of the first tube PP1 may be disposed under the first portion PT1 and may be connected to the lower end of the first portion PT1. The second-second tube PP2-2 of the second tube PP2 may be disposed under the second portion PT2 and may be connected to the lower end of the second portion PT2.
[0132] The third-second pipe PP3-2 of the third pipe PP3 may be disposed under the third portion PT3 and connected to the lower end of the third portion PT3. The fourth-second pipe PP4-2 of the fourth pipe PP4 may be disposed under the fourth portion PT4 and connected to the lower end of the fourth portion PT4.
[0133] The first deposition material DM1 may move through the first tube passage PI1 defined in the first-second tube PP1-2 and the first passage P1 defined in the first portion PT1. The second deposition material DM2 may move through the second tube passage PI2 defined in the second-second tube PP2-2 and the second passage P2 defined in the second portion PT2.
[0134] The third deposition material DM3 may move through the third tube passage PI3 defined in the third-second tube PP3-2 and the third passage P3 defined in the third portion PT3. The fourth deposition material DM4 may move through the fourth tube passage PI4 defined in the fourth-second tube PP4-2 and the fourth passage P4 defined in the fourth portion PT4.
[0135] Fig.10 For along Figure 5 A cross-sectional view taken along line IV-IV' illustrated in FIG. Fig.11 For along Figure 5 A cross-sectional view taken along line VV' illustrated in FIG.
[0136] For ease of description, Fig.10 and Fig.11 The lower part of the main body part BDP is omitted.
[0137] refer to Fig.10 and Fig.11 , the first opening OP1 may be defined in the first nozzle NZ1. The first opening OP1 may be defined to be continuous with the first nozzle channel NP1. For example, a first connection channel CP1 defined to be continuous with the first nozzle channel NP1 and extending toward the first nozzle NZ1 may be defined in the nozzle body part NBD. The first opening OP1 may be defined to be continuous with the first connection channel CP1. For example, the first opening OP1 may be defined to be continuous with the first nozzle channel NP1 through the first connection channel CP1.
[0138] The second opening OP2 may be defined in the second nozzle NZ2. The second opening OP2 may be defined to be continuous with the second nozzle channel NP2. For example, a second connection channel CP2 defined to be continuous with the second nozzle channel NP2 and extending toward the second nozzle NZ2 may be defined in the nozzle body part NBD. The second opening OP2 may be defined to be continuous with the second connection channel CP2. For example, the second opening OP2 may be defined to be continuous with the second nozzle channel NP2 through the second connection channel CP2.
[0139] The third opening OP3 may be defined in the third nozzle NZ3. The third opening OP3 may be defined to be continuous with the third nozzle channel NP3. For example, a third connection channel CP3 defined to be continuous with the third nozzle channel NP3 and extending toward the third nozzle NZ3 may be defined in the nozzle body part NBD. The third opening OP3 may be defined to be continuous with the third connection channel CP3. For example, the third opening OP3 may be defined to be continuous with the third nozzle channel NP3 through the third connection channel CP3.
[0140] The fourth opening OP4 may be defined in the fourth nozzle NZ4. The fourth opening OP4 may be defined as continuous with the fourth nozzle passage NP4. For example, a fourth connection passage CP4 defined as continuous with the fourth nozzle passage NP4 and extending toward the fourth nozzle NZ4 may be defined in the nozzle body part NBD. The fourth opening OP4 may be defined as continuous with the fourth connection passage CP4. For example, the fourth opening OP4 may be defined as continuous with the fourth nozzle passage NP4 through the fourth connection passage CP4.
[0141] exist Fig.10 In FIG. 1 , the second connection channel CP2 and the fourth connection channel CP4 are illustrated by dashed lines, and in FIG. Fig.11 , the first connection channel CP1 and the third connection channel CP3 are illustrated by dotted lines.
[0142] The first deposition material DM1 may be dispensed through the first nozzle NZ1. Specifically, the vaporized first deposition material DM1 may be dispensed upward through the first nozzle channel NP1, the first connection channel CP1, and the first opening OP1.
[0143] The second deposition material DM2 may be dispensed through the second nozzle NZ2. Specifically, the evaporated second deposition material DM2 may be dispensed upward through the second nozzle passage NP2, the second connection passage CP2, and the second opening OP2.
[0144] The third deposition material DM3 may be dispensed through the third nozzle NZ3. Specifically, the evaporated third deposition material DM3 may be dispensed upward through the third nozzle passage NP3, the third connection passage CP3, and the third opening OP3.
[0145] The fourth deposition material DM4 may be dispensed through the fourth nozzle NZ4. Specifically, the evaporated fourth deposition material DM4 may be dispensed upward through the fourth nozzle passage NP4, the fourth connection passage CP4, and the fourth opening OP4.
[0146] The first to fourth deposition materials DM1 ˜ DM4 may be provided to the first to fourth nozzles NZ1 ˜ NZ4 through the first to fourth nozzle passages NP1 ˜ NP4 and the first to fourth connection passages CP1 ˜ CP4 defined in the single nozzle body part NBD.
[0147] Fig.12 For along Fig.10 A cross-sectional view taken along line VI-VI' illustrated in FIG. Fig.13 For along Fig.11 A cross-sectional view taken along line VII-VII' illustrated in FIG.
[0148] Fig.12 and Fig.13 exemplifies a cross section taken along line VI-VI' and line VI-VII' in the first direction DR1, wherein Fig.12 and Fig.13 is a cross-sectional view observed in the second direction DR2. Basically, Fig.12 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, and Fig.13 2 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2. Fig.12 and Fig.13 Example in Figure 1 Cross sections of seven of the nozzles NZ illustrated in FIG.
[0149] refer to Fig.12 , a plurality of first connection channels CP1 may be defined in the nozzle body part NBD. The first connection channel CP1 may be defined to be continuous with the first nozzle channel NP1 and may extend in the third direction DR3. A portion of the second connection channel CP2 is Fig.12 exemplified in the cross-sectional view of .
[0150] The first connection channels CP1 may extend toward the first nozzles NZ1, respectively. The first openings OP1 defined in the first nozzles NZ1 may be defined to be continuous with the first connection channels CP1, respectively. For example, the first openings OP1 and the first connection channels CP1 may be formed as an integrated continuous space.
[0151] refer to Fig.13 , a plurality of second connection channels CP2 may be defined in the nozzle body part NBD. The second connection channels CP2 may be defined to be continuous with the second nozzle channel NP2 and may extend in the third direction DR3. A portion of the first connection channel CP1 is Fig.13 exemplified in the cross-sectional view of .
[0152] The second connection channels CP2 may extend toward the second nozzles NZ2, respectively. The second openings OP2 defined in the second nozzles NZ2 may be defined to be continuous with the second connection channels CP2, respectively. For example, the second openings OP2 and the second connection channels CP2 may be formed as an integrated continuous space.
[0153] refer to Fig.12 and Fig.13 , since the first nozzles NZ1 alternate with the second nozzles NZ2 , the first openings OP1 may alternate with the second openings OP2 , and the first connection channels CP1 may alternate with the second connection channels CP2 .
[0154] Although not illustrated, the cross-sectional configuration of the third opening OP3 and the third connection channel CP3 may be substantially the same as that of the first opening OP1 and the first connection channel CP1. Although not illustrated, the cross-sectional configuration of the fourth opening OP4 and the fourth connection channel CP4 may be substantially the same as that of the second opening OP2 and the second connection channel CP2.
[0155] Fig.14 For explanation purposes Figure 1 Schematic diagram of a deposition process in an evaporation apparatus illustrated in FIG.
[0156] exist Fig.14 In the example, the scale is reduced. Figure 4 Therefore, the side surface of the evaporation device DPA is illustrated in a state where the second nozzle NZ2 and the fourth nozzle NZ4 and the second deposition source SC2 and the fourth deposition source SC4 are viewed, and for ease of description, Fig.14 Reference numerals of the first and third nozzles NZ1 and NZ3 and the first and third deposition sources SC1 and SC3 are illustrated together.
[0157] refer to Fig.14 , the substrate SUB may be disposed above the evaporation device DPA. The mask MK may be disposed on the lower surface of the substrate SUB. Although not illustrated, a plurality of openings for passing the deposition material may be defined in the mask MK. The angle limiting plate ALP may be disposed between the mask MK and the evaporation device DPA.
[0158] refer to Figure 1 and Fig.14 , the evaporated deposition material DM may be distributed upward from the first deposition source SC1 to the fourth deposition source SC4 through the nozzle NZ. The distribution angle of the deposition material DM may be limited by the angle limiting plate ALP.
[0159] The deposition material DM may include the above-mentioned first to fourth deposition materials DM1 ˜ DM4 . As described above, the first to fourth deposition materials DM1 ˜ DM4 may include a host and a dopant.
[0160] The deposition material DM may be provided on the substrate SUB through the opening of the mask MK and may be deposited on the substrate SUB. The deposition material DM may be provided on the substrate SUB while the substrate SUB and the mask MK move in the second direction DR2. However, not limited thereto, the deposition material DM may be provided on the substrate SUB while the evaporation device DPA moves in the second direction DR2.
[0161] Fig.15 As an example, the Figure 1 FIG. 4 is a cross-sectional view of a pixel of an emission layer formed by an evaporation apparatus illustrated in FIG.
[0162] refer to Fig.15 , the pixel PX may include a transistor TR and a light emitting element OLED connected to the transistor TR. Although one pixel PX is illustrated as an example, a plurality of pixels PX may be basically disposed on the substrate SUB.
[0163] The light emitting element OLED may include a first electrode AE, a second electrode CE, a hole control layer HCL, an electron control layer ECL and an emission layer EML. The first electrode AE may be an anode electrode, and the second electrode CE may be a cathode electrode.
[0164] The transistor TR and the light emitting element OLED may be disposed on the substrate SUB. The flat area of the substrate SUB may be divided into an emission portion PA and a non-emission portion NPA surrounding the emission portion PA. The light emitting element OLED may be disposed on the emission portion PA.
[0165] The substrate SUB may include a glass substrate or a flexible plastic substrate. The buffer layer BFL may be disposed on the substrate SUB. The buffer layer BFL may be an inorganic layer.
[0166] The semiconductor patterns S, A, and D may be disposed on the buffer layer BFL. The semiconductor patterns S, A, and D may include polycrystalline silicon. However, not limited thereto, the semiconductor patterns S, A, and D may include amorphous silicon or metal oxide.
[0167] The semiconductor patterns S, A, and D may be doped with an N-type dopant or a P-type dopant. The semiconductor patterns S, A, and D may include a heavily doped region and a lightly doped region. The heavily doped region may have a higher conductivity than the lightly doped region and may be substantially used as a source electrode and a drain electrode of the transistor TR. The lightly doped region may substantially correspond to an active (or channel) region of the transistor TR.
[0168] The source S, active area A, and drain D of the transistor TR may be formed of semiconductor patterns S, A, and D. A first insulating layer INS1 may be disposed on the semiconductor patterns S, A, and D. A gate G of the transistor TR may be disposed on the first insulating layer INS1. A second insulating layer INS2 may be disposed on the gate G. A third insulating layer INS3 may be disposed on the second insulating layer INS2.
[0169] The connection electrode CNE may be disposed between the transistor TR and the light emitting element OLED, and may connect the transistor TR and the light emitting element OLED. The connection electrode CNE may include a first connection electrode CNE1 and a second connection electrode CNE2.
[0170] The first connection electrode CNE1 may be disposed on the third insulating layer INS3 and may be connected to the drain D through a first contact hole CH1 defined in the first to third insulating layers INS1 ˜ INS3 . The fourth insulating layer INS4 may be disposed on the first connection electrode CNE1 . The fifth insulating layer INS5 may be disposed on the fourth insulating layer INS4 .
[0171] The second connection electrode CNE2 may be disposed on the fifth insulating layer INS5. The second connection electrode CNE2 may be connected to the first connection electrode CNE1 through a second contact hole CH2 defined in the fourth insulating layer INS4 and the fifth insulating layer INS5. The sixth insulating layer INS6 may be disposed on the second connection electrode CNE2. The first to sixth insulating layers INS1 to INS6 may be inorganic layers or organic layers.
[0172] The first electrode AE may be disposed on the sixth insulating layer INS6. The first electrode AE may be connected to the second connection electrode CNE2 through a third contact hole CH3 defined in the sixth insulating layer INS6. A pixel defining layer PDL exposing a selectable portion of the first electrode AE may be disposed on the first electrode AE and the sixth insulating layer INS6. An opening PX-OP for exposing a selectable portion of the first electrode AE may be defined in the pixel defining layer PDL.
[0173] The hole control layer HCL may be disposed on the first electrode AE and the pixel defining layer PDL. The hole control layer HCL may be disposed on both the emission part PA and the non-emission part NPA. The hole control layer HCL may include a hole transport layer and a hole injection layer.
[0174] The emission layer EML may be disposed on the hole control layer HCL. The emission layer EML may be disposed in a region corresponding to the opening PX_OP. The emission layer EML may include an organic material and / or an inorganic material. The emission layer EML may generate one of red light, green light, and blue light.
[0175] The electron control layer ECL may be disposed on the emission layer EML and the hole control layer HCL. The electron control layer ECL may be disposed on the emission part PA and the non-emission part NPA together. The electron control layer ECL may include an electron transport layer and an electron injection layer.
[0176] The second electrode CE may be disposed on the electron control layer ECL. The second electrode CE may be commonly disposed in the pixel PX.
[0177] The thin film encapsulation layer TFE may be disposed on the light emitting element OLED. The thin film encapsulation layer TFE may be disposed on the second electrode CE and may cover the pixel PX. The thin film encapsulation layer TFE may include at least two inorganic layers and an organic layer between the inorganic layers. The inorganic layer may protect the pixel PX from moisture / oxygen. The organic layer may protect the pixel PX from foreign substances such as dust particles.
[0178] A first voltage may be applied to the first electrode AE through the transistor TR, and a second voltage having a level lower than that of the first voltage may be applied to the second electrode CE. Holes and electrons injected into the emission layer EML may combine to form excitons, and as the excitons transition to a ground state, the light emitting element OLED may emit light.
[0179] Fig.16 For explanation purposes Fig.14 FIG. 4 is a view of a process of forming an emission layer using an evaporation apparatus illustrated in FIG.
[0180] refer to Fig.16 , the mask MK may be disposed above the substrate SUB. For ease of description, the emission layer EML is illustrated as facing upward, and the mask MK is illustrated as being disposed above the emission layer EML. However, Fig.16 The structure illustrated in the example may correspond substantially to Fig.14 For example, the emission layer EML may face downward, the mask MK may be disposed below or under the emission layer EML, and the evaporation device DPA may be disposed below or under the mask MK.
[0181] The hole control layer HCL may be disposed on the first electrode AE, and the mask MK may be used to form the emission layer EML on the hole control layer HCL. The deposition material DM may be provided on the hole control layer HCL through the opening MOP defined in the mask MK. The emission layer EML may be formed of the deposition material DM.
[0182] Although one emission layer EML is formed on the substrate SUB, a plurality of emission layers EML may be formed on the substrate SUB.
[0183] Fig.17 Example from having Figure 1Different configurations of the evaporation device are illustrated in FIG. 1 , dispensing deposition material onto a substrate and a dashed line graph depicting the distribution of the deposition material. Fig.18 Example from Figure 1 FIG. 4 illustrates a nozzle of an evaporation device dispensing deposition material onto a substrate and a dashed line diagram illustrating the distribution of the deposition material.
[0184] exist Fig.17 and Fig.18 In the figure, for the convenience of description, a dotted line diagram depicting the distribution of the deposition materials M1, M2, and DM1-DM4 is illustrated above the substrate SUB on which the deposition materials M1, M2, and DM1-DM4 are provided. The dotted line diagram may basically represent the amount of the deposition materials M1, M2, and DM1-DM4 distributed toward the substrate SUB. Fig.17 and Fig.18 In the example, the mask MK is omitted. In addition, Fig.18 For Fig.14 Corresponding to the side view, and for convenience of description, the first to fourth deposition sources SC1 to SC4 and the first to fourth tubes PP1 to PP4 are omitted.
[0185] refer to Fig.17 The evaporation apparatus DPA' may include a first deposition source SC1', a first nozzle N1 disposed on the first deposition source SC1', a second deposition source SC2' arranged in the second direction DR2 together with the first deposition source SC1', and a second nozzle N2 disposed on the second deposition source SC2'.
[0186] The first deposition material M1 may be contained in the first deposition source SC1 ′, and the second deposition material M2 may be contained in the second deposition source SC2 ′. For example, the first deposition material M1 may be a host, and the second deposition material M2 may be a dopant.
[0187] The first deposition material M1 may be evaporated in the first deposition source SC1' and may be dispensed toward the substrate SUB through the first nozzle N1. An area of the substrate SUB on which the first deposition material M1 is provided may be defined as a first deposition area DA1'. An amount of the first deposition material M1 may gradually increase toward the center of the first deposition area DA1' and may gradually decrease toward the periphery of the first deposition area DA1'.
[0188] The second deposition material M2 may be evaporated in the second deposition source SC2' and may be dispensed toward the substrate SUB through the second nozzle N2. The area of the substrate SUB on which the second deposition material M2 is provided may be defined as a second deposition area DA2'. The amount of the second deposition material M2 may gradually increase toward the center of the second deposition area DA2' and may gradually decrease toward the periphery of the second deposition area DA2'.
[0189] The first deposition material M1 and the second deposition material M2 may be provided on the substrate SUB in a selectable ratio. For example, the first deposition material M1 and the second deposition material M2 may be provided on the substrate SUB in a ratio of 8:2. The amount of the first deposition material M1 provided on the substrate SUB may be greater than the amount of the second deposition material M2 provided on the substrate SUB. Fig.17 , the distribution diagram of the first deposition material M1 is illustrated above the distribution diagram of the second deposition material M2.
[0190] In the case where the first nozzle N1 and the second nozzle N2 are spaced apart from each other, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB in a selectable ratio. For example, the ratio between the first deposition material M1 and the second deposition material M2 at the first highest point MP1 where the maximum amount of the first deposition material M1 is provided may be different from the ratio between the first deposition material M1 and the second deposition material M2 at the second highest point MP2 where the maximum amount of the second deposition material M2 is provided.
[0191] The difference DF1 between the first deposition material M1 and the second deposition material M2 at the first highest point MP1 may be greater than the difference DF2 between the first deposition material M1 and the second deposition material M2 at the second highest point MP2. For example, the ratio of the first deposition material M1 to the second deposition material M2 may be further increased at the first highest point MP1, and may be reduced at the second highest point MP2. For example, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB in a selectable ratio.
[0192] The difference between the distribution map of the first deposition material M1 and the distribution map of the second deposition material M2 must be constant so that the first deposition material M1 and the second deposition material M2 are provided on the substrate SUB at a selectable ratio. However, since the first nozzle N1 and the second nozzle N2 are spaced apart from each other, the distribution map of the first deposition material M1 does not match the distribution map of the second deposition material M2, the first deposition material M1 and the second deposition material M2 may not be provided on the substrate SUB at a selectable ratio.
[0193] In this case, a mixing ratio between the first deposition material M1 and the second deposition material M2 of the emission layer EML formed on the substrate SUB may not be constant. Therefore, the emission layer EML may have different lifespans, and thus the reliability of the pixel PX may be reduced.
[0194] In the following, Fig.18 In the present invention, the dispensing operation of the first nozzle NZ1 and the dispensing operation of the second nozzle NZ2 will be described together because the first nozzle NZ1 and the second nozzle NZ2 are arranged in the same row in the first direction DR1. Fig.18, the dispensing operation of the third nozzle NZ3 and the dispensing operation of the fourth nozzle NZ4 will be described together because the third nozzle NZ3 and the fourth nozzle NZ4 are arranged in the same row in the first direction DR1.
[0195] refer to Figure 1 and Fig.18 , the first deposition material DM1 may be dispensed onto the substrate SUB through the first nozzle NZ1, and the third deposition material DM3 may be dispensed onto the substrate SUB through the third nozzle NZ3. The second deposition material DM2 may be dispensed onto the substrate SUB through the second nozzle NZ2 disposed in the same row as the first nozzle NZ1, and the fourth deposition material DM4 may be dispensed onto the substrate SUB through the fourth nozzle NZ4 disposed in the same row as the third nozzle NZ3.
[0196] The first deposition material DM1, the second deposition material DM2, the third deposition material DM3, and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio. The first deposition material DM1 and the fourth deposition material DM4 including the main body may be provided on the substrate SUB in an amount greater than the second deposition material DM2 and the third deposition material DM3 including the dopant provided on the substrate SUB. Fig.18 , the distribution graphs of the first deposition material DM1 and the fourth deposition material DM4 are illustrated above the distribution graphs of the second deposition material DM2 and the third deposition material DM3 .
[0197] For example, the amount of the first deposition material DM1 provided on the substrate SUB may be greater than the amount of the fourth deposition material DM4 provided on the substrate SUB. Therefore, the distribution diagram of the first deposition material DM1 is illustrated above the distribution diagram of the fourth deposition material DM4. In addition, the amount of the second deposition material DM2 provided on the substrate SUB may be greater than the amount of the third deposition material DM3 provided on the substrate SUB. Therefore, the distribution diagram of the second deposition material DM2 is illustrated above the distribution diagram of the third deposition material DM3.
[0198] A region of the substrate SUB on which the first deposition material DM1 and the second deposition material DM2 are provided may be defined as a first deposition area DA1. A region of the substrate SUB on which the third deposition material DM3 and the fourth deposition material DM4 are provided may be defined as a second deposition area DA2.
[0199] The amounts of the first deposition material DM1 and the second deposition material DM2 may gradually increase toward the center of the first deposition area DA1, and the amounts of the first deposition material DM1 and the second deposition material DM2 may gradually decrease toward the periphery of the first deposition area DA1. The amounts of the third deposition material DM3 and the fourth deposition material DM4 may gradually increase toward the center of the second deposition area DA2, and the amounts of the third deposition material DM3 and the fourth deposition material DM4 may gradually decrease toward the periphery of the second deposition area DA2.
[0200] The first deposition material DM1 and the second deposition material DM2 may be provided on the same first deposition area DA1 because the first nozzle NZ1 and the second nozzle NZ2 are arranged in the same row. Therefore, the difference between the first deposition material DM1 and the second deposition material DM2 may be constant. For example, the first deposition material DM1 and the second deposition material DM2 may be provided on the substrate SUB in a selectable ratio.
[0201] The third deposition material DM3 and the fourth deposition material DM4 may be provided on the same second deposition area DA2 because the third nozzle NZ3 and the fourth nozzle NZ4 are disposed in the same row. Therefore, the difference between the third deposition material DM3 and the fourth deposition material DM4 may be constant. For example, the third deposition material DM3 and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio.
[0202] Although Fig.17 The first nozzle N1 and the second nozzle N2 are spaced apart from each other in the second direction DR2, but Fig.18 The first nozzle NZ1 and the third nozzle NZ3 in the second direction DR2 may be in close contact with each other. Fig.18 In the embodiment, the second nozzle NZ2 and the fourth nozzle NZ4 may be in close contact with each other in the second direction DR2. Therefore, a gap between the first nozzle NZ1 and the third nozzle NZ3 may be minimized.
[0203] The difference between the first deposition area DA1 and the second deposition area DA2 may be less than Fig.17 The difference between the first deposition area DA1' and the second deposition area DA2' illustrated in FIG. 4. For example, the difference between the first deposition area DA1 and the second deposition area DA2 may be minimized.
[0204] In this case, in Fig.17 In the case where the difference between the distribution profile of the first deposition material M1 and the distribution profile of the second deposition material M2 is compared with the difference between the distribution profile of the first deposition material M1 and the distribution profile of the second deposition material M2 illustrated in FIG. 5 , the difference between the distribution profile of the first deposition material DM1 and the distribution profile of the third deposition material DM3 may be constant.
[0205] The distribution diagram of the first deposition material DM1 and the distribution diagram of the third deposition material DM3 can similarly match each other because the gap between the first nozzle NZ1 and the third nozzle NZ3 is minimized. For the same reason, the distribution diagram of the second deposition material DM2 and the distribution diagram of the fourth deposition material DM4 can similarly match each other because the gap between the second nozzle NZ2 and the fourth nozzle NZ4 is minimized.
[0206] In this case, a mixing ratio between the first to fourth deposition materials DM1 to DM4 of the emission layer EML formed on the substrate SUB may be constant. Therefore, the reliability of the pixel PX may be improved.
[0207] Fig.19 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0208] Fig.19 For Figure 5 The following description will focus on Figure 5 The evaporation device DPA and Fig.19 The differences between the evaporation apparatus DPA-1 illustrated in FIG.
[0209] refer to Fig.19 , the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4 may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4 may be repeatedly arranged in the first direction DR1 in the order of the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4.
[0210] Figure 20 to Figure 23 As an example, Fig.19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when looking in the first direction.
[0211] Figure 20 to Figure 23 For Fig.10 and Fig.11 The corresponding cross-sectional view. Fig. 20 is a cross-sectional view of the first nozzle NZ1 when viewed in the first direction DR1, and Fig.21 is a cross-sectional view of the second nozzle NZ2 when viewed in the first direction DR1. Fig. 22 is a cross-sectional view of the third nozzle NZ3 when viewed in the first direction DR1, and Fig.23 is a cross-sectional view of the fourth nozzle NZ4 when viewed in the first direction DR1.
[0212] refer to Fig. 20, a first connection channel CP1 extending from the first nozzle channel NP1 toward the first nozzle NZ1 may be defined in the nozzle body part NBD. A first opening OP1 defined in the first nozzle NZ1 may be defined to be continuous with the first connection channel CP1. Fig. 20 , the second connection channel CP2, the third connection channel CP3 and the fourth connection channel CP4 are illustrated by dotted lines.
[0213] refer to Fig.21 , a second connection channel CP2 extending from the second nozzle channel NP2 toward the second nozzle NZ2 may be defined in the nozzle body part NBD. A second opening OP2 defined in the second nozzle NZ2 may be defined to be continuous with the second connection channel CP2. Fig.21 , the first connection channel CP1, the third connection channel CP3 and the fourth connection channel CP4 are illustrated by dotted lines.
[0214] refer to Fig. 22 , a third connection passage CP3 extending from the third nozzle passage NP3 toward the third nozzle NZ3 may be defined in the nozzle body part NBD. A third opening OP3 defined in the third nozzle NZ3 may be defined to be continuous with the third connection passage CP3. Fig. 22 , the first connection channel CP1, the second connection channel CP2 and the fourth connection channel CP4 are illustrated by dotted lines.
[0215] refer to Fig.23 A fourth connection passage CP4 extending from the fourth nozzle passage NP4 toward the fourth nozzle NZ4 may be defined in the nozzle body part NBD. A fourth opening OP4 defined in the fourth nozzle NZ4 may be defined to be continuous with the fourth connection passage CP4. Fig.23 , the first connection channel CP1, the second connection channel CP2 and the third connection channel CP3 are illustrated by dotted lines.
[0216] Figure 24 to Figure 27 As an example, Fig.19 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle, the third nozzle and the fourth nozzle when looking in the second direction in FIG.
[0217] Figure 24 to Figure 27 For Fig.12 and Fig.13 The corresponding cross-sectional view. Figure 24 to Figure 27 Example in Fig.19 Cross sections of eight of the illustrated nozzles NZ.
[0218] Fig.24 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, and Fig.25 2 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2. Fig.26is a cross-sectional view of the third opening OP3 and the third connecting channel CP3, and Fig. 27 is a cross-sectional view of the fourth opening OP4 and the fourth connecting channel CP4.
[0219] refer to Fig.24 , a plurality of first connection channels CP1 extending from the first nozzle channel NP1 toward the first nozzle NZ1 may be defined in the nozzle body part NBD. A first opening OP1 may be defined in the first nozzle NZ1 so as to be continuous with the first connection channels CP1.
[0220] refer to Fig.25 A plurality of second connection passages CP2 extending from the second nozzle passage NP2 toward the second nozzle NZ2 may be defined in the nozzle body part NBD. A second opening OP2 may be defined in the second nozzle NZ2 so as to be continuous with the second connection passages CP2.
[0221] refer to Fig.26 A plurality of third connection passages CP3 extending from the third nozzle passage NP3 toward the third nozzle NZ3 may be defined in the nozzle body part NBD. A third opening OP3 may be defined in the third nozzle NZ3 so as to be continuous with the third connection passages CP3.
[0222] refer to Fig. 27 A plurality of fourth connection passages CP4 extending from the fourth nozzle passage NP4 toward the fourth nozzle NZ4 may be defined in the nozzle body part NBD. A fourth opening OP4 may be defined in the fourth nozzle NZ4 so as to be continuous with the fourth connection passages CP4.
[0223] refer to Figure 24 to Figure 27 , the first connecting channel CP1, the second connecting channel CP2, the third connecting channel CP3 and the fourth connecting channel CP4 can be repeatedly arranged in the order of the first connecting channel CP1, the second connecting channel CP2, the third connecting channel CP3 and the fourth connecting channel CP4, because the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4 are repeatedly arranged in the order of the first nozzle NZ1, the second nozzle NZ2, the third nozzle NZ3 and the fourth nozzle NZ4.
[0224] Fig.28 is a view illustrating a configuration of an evaporation device according to an embodiment. Fig.29 To be able to use Fig.28 A cross-sectional view of a light-emitting element formed by the evaporation apparatus illustrated in FIG.
[0225] Fig.28 For Fig.14 Corresponding side view.
[0226] refer to Fig.28 ,Apart from Figure 1In addition to the evaporation apparatus DPA illustrated in FIG. 1 , the evaporation apparatus DPA-2 may further include a fifth deposition source SC5 and a fifth nozzle NZ5. The fifth deposition source SC5 may be spaced apart from the first deposition source SC1 and the second deposition source SC2 in the second direction DR2. The first deposition source SC1 and the second deposition source SC2 may be disposed between the body part BDP and the fifth deposition source SC5. The fifth deposition material DM5 may be accommodated in the fifth deposition source SC5.
[0227] The fifth nozzle NZ5 may be connected to an upper end of the fifth deposition source SC5. Basically, a plurality of fifth nozzles NZ5 may be arranged in the first direction and may be provided on the fifth deposition source SC5.
[0228] refer to Fig.28 and Fig.29 The fifth deposition material DM5 may include a material for forming the auxiliary hole transport layer BIL. The fifth deposition material DM5 evaporated in the fifth deposition source SC5 may be dispensed onto the substrate SUB through the fifth nozzle NZ5. The dispensing angle of the fifth deposition material DM5 may be limited by the angle limiting plate ALP-1 disposed above the fifth deposition source SC5.
[0229] The auxiliary hole transport layer BIL may be formed on the hole control layer HCL before forming the emission layer EML. The substrate SUB and the mask MK may be moved in the first direction DR, and the fifth deposition material DM5 may be provided on the substrate SUB. Thereafter, the deposition material DM may be provided on the substrate SUB. Thus, the auxiliary hole transport layer BIL may be formed on the hole control layer HCL, and thereafter the emission layer EML may be formed.
[0230] The auxiliary hole transport layer BIL and the emission layer EML may be formed through one process using an evaporation apparatus DPA-2.
[0231] Fig.30 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0232] Fig.30 For Figure 5 The following description will focus on Figure 5 The evaporation device DPA and Fig.30 The differences between the evaporation apparatus DPA-3 illustrated in FIG.
[0233] refer to Fig.30, the first deposition source SC1, the second deposition source SC2, and the third deposition source SC3 may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may protrude upward from the upper end of the nozzle body part NBD and may be arranged in the first direction DR1. The first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may be repeatedly arranged in the first direction DR1 in the order of the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3.
[0234] The first tube PP1, the second tube PP2, and the third tube PP3 may be connected to the first deposition source SC1, the second deposition source SC2, and the third deposition source SC3, respectively. The first tube PP1, the second tube PP2, and the third tube PP3 may be connected to the body part BDP ( Fig.31 example in).
[0235] The first tube PP1 may include a first-first tube PP1-1 connected to the first deposition source SC1 and a first-second tube PP1-2 connected to the body part BDP. The second tube PP2 may include a second-first tube PP2-1 connected to the second deposition source SC2 and a second-second tube PP2-2 connected to the body part BDP. The third tube PP3 may include a third-first tube PP3-1 connected to the third deposition source SC3 and a third-second tube PP3-2 connected to the body part BDP.
[0236] The evaporation apparatus DPA-3 may further include a fourth deposition source SC4-1 and a plurality of fourth nozzles NZ4-1 connected to an upper end of the fourth deposition source SC4-1. The fourth deposition source SC4-1 may be spaced apart from the body part BDP and the nozzle body part NBD in the second direction DR2. The body part BDP and the nozzle body part NBD may be disposed between the first deposition source SC1, the second deposition source SC2, and the third deposition source SC3 and the fourth deposition source SC4-1. The fourth nozzles NZ4-1 may be arranged in the first direction DR1.
[0237] The first deposition material DM1, the second deposition material DM2, and the third deposition material DM3 may be contained in the first deposition source SC1, the second deposition source SC2, and the third deposition source SC3. The fourth deposition material DM4 may be contained in the fourth deposition source SC4-1.
[0238] Fig.31 For along Fig.30 A cross-sectional view taken along line VIII-VIII' illustrated in FIG.
[0239] refer to Fig.30 and Fig.31, the body part BDP may include a first portion PT1, a second portion PT2, and a third portion PT3 arranged in the second direction DR2. The first-second tube PP1-2 of the first tube PP1 may be connected to the lower end of the first portion PT1, the second tube PP2-2 of the second tube PP2 may be connected to the lower end of the second portion PT2, and the third-second tube PP3-2 of the third tube PP3 may be connected to the lower end of the third portion PT3.
[0240] The first tube passage PI1 defined in the first-second tube PP1-2, the first passage P1 defined in the first portion PT1, and the first nozzle passage NP1 defined in the nozzle body part NBD may be defined continuously. The second tube passage PI2 defined in the second-second tube PP2-2, the second passage P2 defined in the second portion PT2, and the second nozzle passage NP2 defined in the nozzle body part NBD may be defined continuously. The third tube passage PI3 defined in the third-second tube PP3-2, the third passage P3 defined in the third portion PT3, and the third nozzle passage NP3 defined in the nozzle body part NBD may be defined continuously.
[0241] Figure 32 to Figure 34 As an example, Fig.30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when looking in the first direction.
[0242] Figure 32 to Figure 34 For Fig.10 and Fig.11 The corresponding cross-sectional view. Fig.32 is a cross-sectional view of the first nozzle NZ1 when viewed in the first direction DR1, Fig.33 is a cross-sectional view of the second nozzle NZ2 when viewed in the first direction DR1, and Fig.34 is a cross-sectional view of the third nozzle NZ3 when viewed in the first direction DR1.
[0243] refer to Fig.32 , a first connection passage CP1 extending from the first nozzle passage NP1 toward the first opening OP1 of the first nozzle NZ1 may be defined in the nozzle body part NBD. The first opening OP1 may be defined to be continuous with the first connection passage CP1. Fig.32 , the second connection channel CP2 and the third connection channel CP3 are illustrated by dotted lines.
[0244] refer to Fig.33 A second connection passage CP2 extending from the second nozzle passage NP2 toward the second opening OP2 of the second nozzle NZ2 may be defined in the nozzle body part NBD. The second opening OP2 may be defined to be continuous with the second connection passage CP2. Fig.33 , the first connection channel CP1 and the third connection channel CP3 are illustrated by dotted lines.
[0245] refer to Fig.34 A third connection passage CP3 extending from the third nozzle passage NP3 toward the third opening OP3 of the third nozzle NZ3 may be defined in the nozzle body part NBD. The third opening OP3 may be defined to be continuous with the third connection passage CP3. Fig.34 In FIG. 1 , the first connection channel CP1 and the second connection channel CP2 are illustrated by dotted lines.
[0246] Figure 35 to Figure 37 As an example, Fig.30 A view of the cross-sectional configuration of the nozzle body component and the first nozzle, the second nozzle and the third nozzle when looking in the second direction.
[0247] Figure 35 to Figure 37 For Fig.12 and Fig.13 The corresponding cross-sectional view. Figure 35 to Figure 37 Example in Fig.30 Cross sections of six of the nozzles NZ illustrated in FIG.
[0248] Fig.35 is a cross-sectional view of the first opening OP1 and the first connecting channel CP1, Fig.36 is a cross-sectional view of the second opening OP2 and the second connecting channel CP2, and Fig.37 4 is a cross-sectional view of the third opening OP3 and the third connecting channel CP3.
[0249] refer to Fig.35 , a plurality of first connection channels CP1 extending from the first nozzle channel NP1 toward the first opening OP1 of the first nozzle NZ1 may be defined in the nozzle body part NBD.
[0250] refer to Fig.36 , a plurality of second connection channels CP2 extending from the second nozzle channel NP2 toward the second opening OP2 of the second nozzle NZ2 may be defined in the nozzle body part NBD.
[0251] refer to Fig.37 , a plurality of third connection passages CP3 extending from the third nozzle passage NP3 toward the third opening OP3 of the third nozzle NZ3 may be defined in the nozzle body part NBD.
[0252] refer to Figure 35 to Figure 37 The first connecting channel CP1, the second connecting channel CP2 and the third connecting channel CP3 may be repeatedly arranged in the order of the first connecting channel CP1, the second connecting channel CP2 and the third connecting channel CP3 because the first nozzle NZ1, the second nozzle NZ2 and the third nozzle NZ3 are repeatedly arranged in the order of the first nozzle NZ1, the second nozzle NZ2 and the third nozzle NZ3.
[0253] Fig.38 As an example, the deposited material is Fig.30 FIG. 4 is a diagram illustrating a distribution of an evaporation device onto a substrate.
[0254] Fig.38 DR1 is a side view of the evaporation device when viewed in the first direction DR1. Fig.38 The side surface of the evaporation apparatus DPA-3 in a state where the third nozzle NZ3 and the third deposition source SC3 are viewed is illustrated, and for convenience of description, reference numerals of the first and second nozzles NZ1 and NZ2 and the first and second deposition sources SC1 and SC2 are illustrated together.
[0255] refer to Fig.30 and Fig.38 The first deposition material DM1, the second deposition material DM2, and the third deposition material DM3 may be dispensed from the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 toward the substrate SUB. The fourth deposition material DM4 evaporated in the fourth deposition source SC4-1 may be dispensed toward the substrate SUB through the fourth nozzle NZ4-1.
[0256] The fourth nozzle NZ4-1 may be disposed obliquely toward the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3. In this case, a deposition area (not illustrated in the reference numerals) on the substrate SUB provided with the first deposition material DM1, the second deposition material DM2, and the third deposition material DM3 dispensed from the first nozzle NZ1, the second nozzle NZ2, and the third nozzle NZ3 may be substantially the same as a deposition area (not illustrated in the reference numerals) on the substrate SUB provided with the fourth deposition material DM4 dispensed from the fourth nozzle NZ4-1.
[0257] exist Fig.18 In the embodiment, the first deposition material DM1 and the second deposition material DM2 dispensed from the first nozzle NZ1 and the second nozzle NZ2 may be provided on the same first deposition area DA1. For example, the first deposition material M1 and the second deposition material M2 may be dispensed onto the substrate SUB in a selectable ratio.
[0258] Likewise, even in Fig.38 In the embodiment, the first deposition material DM1, the second deposition material DM2, the third deposition material DM1 and the fourth deposition material DM4 may be provided on the same deposition area. Therefore, the first deposition material DM1, the second deposition material DM2, the third deposition material DM1 and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio.
[0259] Fig.39 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment.
[0260] Fig.39 For Figure 5 The following description will focus on Figure 5 The evaporation device DPA and Fig.39 The differences between the evaporation apparatus DPA-4 illustrated in FIG.
[0261] refer to Fig.39 , the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4 may be arranged in the first direction DR1. Except for the arrangement of the first deposition source SC1, the second deposition source SC2, the third deposition source SC3, and the fourth deposition source SC4, the evaporation apparatus DPA-4 may be substantially the same as the evaporation apparatus DPA.
[0262] For example, Fig. 9 As illustrated in FIG. 1 , the first tube PP1, the second tube PP2, the third tube PP3, and the fourth tube PP4 may be connected to the first portion PT1, the second portion PT2, the third portion PT3, and the fourth portion PT4 of the body part BDP, respectively. Fig.10 and Fig.11 As illustrated in FIG. 1 , the first to fourth passages P1 to P4 may be defined in the first to fourth portions PT1 to PT4 of the body part BDP, and the first to fourth nozzle passages NP1 to NP4 and the first to fourth connecting passages CP1 to CP4 may be defined in the nozzle body part NBD.
[0263] Fig.40 FIG. 1 is a view illustrating a planar configuration of an evaporation device according to an embodiment. Fig.41 As an example, the deposited material is Fig.40 FIG. 4 is a diagram illustrating a distribution of an evaporation device onto a substrate.
[0264] Fig.40 For Figure 5 The corresponding plan view. Fig.41 For Fig.38 The corresponding side view. Fig.41 The following description will focus on Figure 5 The evaporation device DPA and Fig.40 The differences between the evaporation apparatus DPA-5 illustrated in FIG.
[0265] refer to Fig.40 and Fig.41, the body part BDP-1 may include a first body part BDP1 and a second body part BDP2. The nozzle body part NBD-1 may include a first nozzle body part NBD1 disposed on the first body part BDP1 and a second nozzle body part NBD2 disposed on the second body part BDP2. Basically, the first body part BDP1 and the second body part BDP2 and the first nozzle body part NBD1 and the second nozzle body part NBD2 may correspond to Figure 5 The main body part BDP illustrated in the example is divided into two parts and Figure 5 The nozzle body part NBD illustrated in the figure is divided into two parts.
[0266] For example, the structure of the first body part BDP1 may substantially correspond to that of the body part BDP and may include a first channel P1 and a second channel P2 in Figures 7 to 11 The structure of the second body part BDP2 may substantially correspond to that of the body part BDP, and may include a third channel P3 and a fourth channel P4 defined in Figures 7 to 11 Part of the third part PT3 and the fourth part PT4.
[0267] Therefore, the first and second pipes PP1 and PP2 may be connected to the first body part BDP1, and the third and fourth pipes PP3 and PP4 may be connected to the second body part BDP2.
[0268] The structure of the first nozzle body part NBD1 may substantially correspond to that of the nozzle body part NBD in which the first nozzle passage NP1, the second nozzle passage NP2, the first connection passage CP1, and the second connection passage CP2 are defined. Figures 7 to 11 The structure of the second nozzle body part NBD2 may substantially correspond to that of the nozzle body part NBD, wherein the third nozzle passage NP3, the fourth nozzle passage NP4, the third connection passage CP3 and the fourth connection passage CP4 are defined in Figures 7 to 11 part of .
[0269] Therefore, the first and second nozzles NZ1 and NZ2 may protrude upward from the upper end of the first nozzle body part NBD1, and the third and fourth nozzles NZ3 and NZ4 may protrude upward from the upper end of the second nozzle body part NBD2.
[0270] The first body part BDP1 may be disposed between the first and second deposition sources SC1 and SC2 and the second body part BDP2 in the second direction DR2. The first nozzle body part NBD1 may be disposed between the first and second deposition sources SC1 and SC2 and the second nozzle body part NBD2 in the second direction DR2.
[0271] The second body part BDP2 may be disposed between the first body part BDP1 and the third and fourth deposition sources SC3 and SC4 in the second direction DR2. The second nozzle body part NBD2 may be disposed between the first nozzle body part NBD1 and the third and fourth deposition sources SC3 and SC4 in the second direction DR2.
[0272] refer to Fig.41 , the first nozzle NZ1 and the second nozzle NZ2 and the third nozzle NZ3 and the fourth nozzle NZ4 may be tiltedly disposed to face each other. The first deposition material DM1 and the second deposition material DM2 may be dispensed from the first nozzle NZ1 and the second nozzle NZ2 toward the substrate SUB. The third deposition material DM3 and the fourth deposition material DM4 may be dispensed from the third nozzle NZ3 and the fourth nozzle NZ4 toward the substrate SUB.
[0273] In the case where the first nozzle NZ1 and the second nozzle NZ2 and the third nozzle NZ3 and the fourth nozzle NZ4 are obliquely arranged to face each other, a deposition area (not illustrated in the reference numerals) on the substrate SUB provided with the first deposition material DM1 and the second deposition material DM2 dispensed from the first nozzle NZ1 and the second nozzle NZ2 may be substantially the same as a deposition area (not illustrated in the reference numerals) on the substrate SUB provided with the third deposition material DM3 and the fourth deposition material DM4 dispensed from the third nozzle NZ3 and the fourth nozzle NZ4. In this case, as described above, the first deposition material DM1, the second deposition material DM2, the third deposition material DM3, and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio.
[0274] Fig.42 FIG. 1 is a view illustrating that a deposition material is dispensed onto a substrate from an evaporation device according to an embodiment.
[0275] Fig.42 For Fig.38 Corresponding side view. Fig.42 It is a side view of the evaporation device when viewed in the first direction DR1.
[0276] refer to Fig.42 , the evaporation device DPA-6 may include a first deposition source SC1-1, a second deposition source SC2-1, a third deposition source SC3-1, a fourth deposition source SC4-2, and a plurality of first nozzles NZ1-1, second nozzles NZ2-1, third nozzles NZ3-1, and fourth nozzles NZ4-2.
[0277] The first deposition source SC1-1, the second deposition source SC2-1, the third deposition source SC3-1, and the fourth deposition source SC4-2 may be arranged in the second direction DR2. The first deposition material DM1 may be contained in the first deposition source SC1-1, and the second deposition material DM2 may be contained in the second deposition source SC2-1. The third deposition material DM3 may be contained in the third deposition source SC3-1, and the fourth deposition material DM4 may be contained in the fourth deposition source SC4-2.
[0278] The first nozzle NZ1-1 may be disposed on the first deposition source SC1-1. Although one first nozzle NZ1-1 is illustrated in the side view, a plurality of first nozzles NZ1-1 arranged in the first direction DR1 may be disposed on the first deposition source SC1-1. The second nozzle NZ2-1 may be disposed on the second deposition source SC2-1. Although one second nozzle NZ2-1 is illustrated in the side view, a plurality of second nozzles NZ2-1 arranged in the first direction DR1 may be disposed on the second deposition source SC2-1.
[0279] The third nozzle NZ3-1 may be disposed on the third deposition source SC3-1. Although one third nozzle NZ3-1 is illustrated in the side view, a plurality of third nozzles NZ3-1 arranged in the first direction DR1 may be disposed on the third deposition source SC3-1. The fourth nozzle NZ4-2 may be disposed on the fourth deposition source SC4-2. Although one fourth nozzle NZ4-2 is illustrated in the side view, a plurality of fourth nozzles NZ4-2 arranged in the first direction DR1 may be disposed on the fourth deposition source SC4-2.
[0280] The second nozzle NZ2-1 and the third nozzle NZ3-1 may be disposed obliquely to face each other and may be symmetrical to each other. The first nozzle NZ1-1 and the fourth nozzle NZ4-2 may be disposed obliquely to face each other and may be symmetrical to each other. The slopes of the first nozzle NZ1-1 and the fourth nozzle NZ4-2 may be greater than the slopes of the second nozzle NZ2-1 and the third nozzle NZ3-1.
[0281] According to the structure of the first nozzle NZ1-1, the second nozzle NZ2-1, the third nozzle NZ3-1 and the fourth nozzle NZ4-2, the deposition area (not shown in the reference numeral) on the substrate SUB provided with the first deposition material DM1 dispensed from the first nozzle NZ1-1, the deposition area (not shown in the reference numeral) on the substrate SUB provided with the second deposition material DM2 dispensed from the second nozzle NZ2-1, the deposition area (not shown in the reference numeral) on the substrate SUB provided with the third deposition material DM3 dispensed from the third nozzle NZ3-1 and the deposition area (not shown in the reference numeral) on the substrate SUB provided with the fourth deposition material DM4 dispensed from the fourth nozzle NZ4-2 may be substantially the same as each other. In this case, as described above, the first deposition material DM1, the second deposition material DM2, the third deposition material DM3 and the fourth deposition material DM4 may be provided on the substrate SUB in a selectable ratio.
[0282] According to various embodiments, nozzles of evaporation devices arranged in different rows may be disposed as close to each other as possible to contact each other. Therefore, a mixing ratio between deposition materials provided on the substrate may be constant.
[0283] While the present disclosure has been described with reference to the embodiments thereof, it will be apparent to those skilled in the art that various changes and modifications can be made thereto without departing from the spirit and scope of the present disclosure and as set forth in the claims.
Claims
1. An evaporation device, comprising: The first sediment source; a second deposition source, arranged together with the first deposition source in a first direction; a main body component spaced apart from the first deposition source and the second deposition source in a second direction intersecting the first direction, the main body component comprising a first portion and a second portion arranged in the second direction; A nozzle body component, disposed on the body component; a first pipe connected to a side surface of the first deposition source facing the main body part and the nozzle main body part and a lower end of the first portion; a second pipe connected to a side surface of the second deposition source facing the body part and the nozzle body part and a lower end of the second portion; a first nozzle protruding upward from the nozzle body member; as well as The second nozzle protrudes upward from the nozzle body component. 2 . The evaporation device according to claim 1 , wherein the first nozzle and the second nozzle are arranged in the first direction.
3. The evaporation device according to claim 1, wherein a first tube channel is defined in the first tube, and a first channel continuous with the first tube channel is defined in the first portion, and A second tube passage is defined in the second tube, and a second passage continuous with the second tube passage is defined in the second portion.
4. The evaporation device according to claim 3, wherein A first nozzle channel continuous with the first channel and a second nozzle channel continuous with the second channel are defined in the nozzle body member, and A first opening continuous with the first nozzle passage is defined in the first nozzle, and a second opening continuous with the second nozzle passage is defined in the second nozzle.
5. The evaporation device according to claim 1, wherein The first tube comprises: a first-first tube connected to an upper portion of the side surface of the first deposition source and extending downward; as well as a first-second tube connected to the lower portion of the first-first tube and the lower end of the first portion, and The second tube comprises: a second-first tube connected to an upper portion of the side surface of the second deposition source and extending downward; as well as A second-second tube is connected to the lower portion of the second-first tube and the lower end of the second portion.
6. The evaporation device according to claim 1, further comprising: The third sediment source; as well as A fourth deposition source is arranged together with the third deposition source in the first direction, wherein The third deposition source and the fourth deposition source are spaced apart from the first deposition source and the second deposition source in the second direction, and The body part and the nozzle body part are disposed between the first and second deposition sources and the third and fourth deposition sources. 7 . The evaporation apparatus according to claim 6 , wherein different deposition materials are respectively contained in the first deposition source, the second deposition source, the third deposition source, and the fourth deposition source.
8. The evaporation device according to claim 6, wherein: The main body member further includes a third portion and a fourth portion arranged in the second direction together with the first portion and the second portion, and The evaporation device further comprises: a third pipe connected to a side surface of the third deposition source facing the main body part and the nozzle main body part and a lower end of the third portion; a fourth pipe connected to a side surface of the fourth deposition source facing the main body part and the nozzle main body part and a lower end of the fourth portion; a third nozzle protruding upward from the nozzle body member; and The fourth nozzle protrudes upward from the nozzle body component. 9 . The evaporation device according to claim 8 , wherein the third nozzle and the fourth nozzle are disposed in the first direction and are disposed adjacent to the first nozzle and the second nozzle in the second direction, respectively. 10 . The evaporation device of claim 9 , wherein the third nozzle and the fourth nozzle directly contact the first nozzle and the second nozzle, respectively, in the second direction.
11. The evaporation device according to claim 8, wherein a third tube passage is defined in the third tube, and a third passage continuous with the third tube passage is defined in the third portion, a fourth tube channel is defined in the fourth tube, and a fourth channel continuous with the fourth tube channel is defined in the fourth portion, A third nozzle channel continuous with the third channel and a fourth nozzle channel continuous with the fourth channel are defined in the nozzle body member, and A third opening continuous with the third nozzle passage is defined in the third nozzle, and a fourth opening continuous with the fourth nozzle passage is defined in the fourth nozzle. 12 . The evaporation device according to claim 8 , wherein the first nozzle, the second nozzle, the third nozzle, and the fourth nozzle are arranged in the first direction.
13. The evaporation device according to claim 8, further comprising: a fifth deposition source spaced apart from the first deposition source and the second deposition source in the second direction; as well as a fifth nozzle connected to an upper end of the fifth deposition source, The first deposition source and the second deposition source are arranged between the main component and the fifth deposition source.
14. The evaporation device according to claim 1, further comprising: a third deposition source, arranged together with the first deposition source and the second deposition source in the first direction; a third tube connected to the third deposition source and a third portion of the main body component; a third nozzle protruding upward from the nozzle body member; a fourth deposition source spaced apart from the nozzle body component in the second direction; as well as a plurality of fourth nozzles connected to the upper end of the fourth deposition source and arranged in the first direction, The main body component is disposed between the first deposition source, the second deposition source, the third deposition source and the fourth deposition source.
15. The evaporation device according to claim 14, wherein The first nozzle, the second nozzle and the third nozzle are arranged in the first direction, and The plurality of fourth nozzles are obliquely disposed to face the first nozzle, the second nozzle, and the third nozzle.
16. The evaporation device according to claim 1, further comprising: The third sediment source; The fourth sediment source; a third tube connected to the third deposition source and the main body component; a fourth tube connected to the fourth deposition source and the main body component; a third nozzle protruding upward from the nozzle body member; as well as a fourth nozzle protruding upward from the nozzle body member, The first deposition source, the second deposition source, the third deposition source and the fourth deposition source are arranged in the first direction.
17. The evaporation device according to claim 1, further comprising: The third sediment source; a fourth deposition source, arranged together with the third deposition source in the first direction; a third tube connected to the third deposition source; a fourth tube connected to the fourth deposition source; as well as The third nozzle and the fourth nozzle are arranged in the first direction, wherein The main body component comprises: a first body member connected to the first tube and the second tube; and a second body member connected to the third tube and the fourth tube, The nozzle body component comprises: a first nozzle body part from which the first nozzle and the second nozzle protrude, the first nozzle body part being disposed on the first body part; and a second nozzle body component, disposed on the second body component, The third nozzle and the fourth nozzle protrude upward from the second nozzle body part, and The first body part is disposed between the first and second deposition sources and the second body part in the second direction, and the second body part is disposed between the first body part and the third and fourth deposition sources in the second direction. 18 . The evaporation device according to claim 17 , wherein the first and second nozzles and the third and fourth nozzles are obliquely disposed to face each other.
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KR1020230119459A