Organic light emitting diode display device

Abstract

An organic light emitting diode display device includes a first light emitting layer, a first anode, a first reflective pattern, and a dielectric material. The first light emitting layer, the first anode, and the first reflective pattern are in the first sub-pixel region, the first anode is disposed under the first light emitting layer in the vertical direction, and the first reflective pattern is disposed under the first anode in the vertical direction. The dielectric material portion is disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected to the first anode.

Description

Technical Field

[0001] The present invention relates to an organic light emitting diode display device, and in particular to an organic light emitting diode display device comprising a reflective pattern. Background Art

[0002] Electroluminescent display devices (ELDs) have gradually replaced liquid crystal displays and become the mainstream display technology due to their features such as no need for color filters, self-luminescence (no need for backlight modules), and suitability for flexible display devices. Among various ELDs, organic light emitting diode (OLED) displays are currently quite mature technologies and have been applied to many display products of different sizes and / or functions, such as mobile phones, tablet computers, televisions, outdoor electronic billboards, digital cameras, head-mounted display devices, VR / AR glasses and other electronic products. Displays in electronic products such as electronic viewfinders of digital cameras, head-mounted display devices, and VR / AR glasses are generally referred to as micro displays. Compared with other types of micro displays, OLED micro displays have advantages such as higher resolution, lower display delay, and higher contrast. In addition, the technology for manufacturing OLED micro displays using CMOS manufacturing processes is generally referred to as OLED on silicon (OLEDoS) technology, and the advantage of this technology is that it can be integrated with display driver circuits and other functional components or / and circuits to achieve the effect of reducing product size. Summary of the invention

[0003] The present invention provides an organic light emitting diode display device, which improves the viewing angle range and / or the uniformity of displayed light by arranging a reflective pattern electrically connected to the anode under the anode in a sub-pixel region.

[0004] An embodiment of the present invention provides an organic light emitting diode display device, comprising a first light emitting layer, a first anode, a first reflective pattern and a dielectric material. The first light emitting layer, the first anode and the first reflective pattern are located in a first sub-pixel region. The first anode is disposed below the first light emitting layer in a vertical direction, and the first reflective pattern is disposed below the first anode in a vertical direction. The dielectric material is partially disposed between the first anode and the first reflective pattern, and the first reflective pattern is electrically connected to the first anode. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1 is a schematic diagram of an organic light emitting diode display device according to a first embodiment of the present invention;

[0006] Figure 2 is a schematic diagram of an organic light emitting diode display device according to a second embodiment of the present invention;

[0007] Figure 3 is a top view schematically showing an organic light emitting diode display device according to a second embodiment of the present invention;

[0008] Figure 4 is a schematic diagram of an organic light emitting diode display device according to a third embodiment of the present invention;

[0009] Figure 5 FIG. 4 is a schematic diagram of an organic light emitting diode display device according to a fourth embodiment of the present invention.

[0010] Explanation of symbols

[0011] 10: Semiconductor substrate

[0012] 12: Well region

[0013] 14: Isolation Structure

[0014] 20: Dielectric layer

[0015] 30: Dielectric materials

[0016] 40A: First anode

[0017] 40B: Second anode

[0018] 40C: The third anode

[0019] 50: Isolation Structure

[0020] 60: cathode

[0021] 101: Organic light emitting diode display device

[0022] 102: Organic light emitting diode display device

[0023] 103: Organic light emitting diode display device

[0024] 104: Organic light emitting diode display device

[0025] BS: Bottom surface

[0026] CS: Interconnect Structure

[0027] CT: Contact structure

[0028] CV: Conductive Via

[0029] D1: Vertical direction

[0030] D2: Horizontal direction

[0031] GE: Gate

[0032] GI: Gate dielectric layer

[0033] LE1: First light-emitting layer

[0034] LE2: Second light-emitting layer

[0035] LE3: The third luminescent layer

[0036] MS: device base

[0037] P1: lower part

[0038] P2: upper part

[0039] PX: Sub-pixel area

[0040] PX1: first sub-pixel area

[0041] PX2: second sub-pixel area

[0042] PX3: The third sub-pixel area

[0043] RP1: First reflection pattern

[0044] RP2: Second reflection pattern

[0045] RP3: The third reflection pattern

[0046] RS: Recessed structure

[0047] RV1: First reflective via structure

[0048] RV2: Second reflective via structure

[0049] RV3: The third reflective via structure

[0050] SD: Source / Drain Region

[0051] SW: Sidewall

[0052] TR: Transistor

[0053] TR1: Transistor

[0054] TR2: Transistor

[0055] TR3: Transistor

[0056] TS: Top surface

[0057] TS1: Top surface

[0058] W1: Width

[0059] W2: Width DETAILED DESCRIPTION

[0060] The following detailed description of the present invention has disclosed enough details to enable those skilled in the art to practice the present invention. The embodiments set forth below should be considered illustrative rather than restrictive. It will be apparent to those skilled in the art that various changes and modifications in form and detail may be made without departing from the spirit and scope of the present invention.

[0061] Before further describing each embodiment, specific terms used throughout the text are explained below.

[0062] The meanings of the terms "on," "over," and "over" should be interpreted in the broadest manner, so that "on" means not only "directly on" something, but also includes being on something with other intervening features or layers therebetween, and "over" or "over" means not only being "on" or "over" something, but also includes being "on" or "over" something with no other intervening features or layers therebetween (i.e., directly on something).

[0063] The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify the elements of the claims. Unless otherwise specified, they do not imply or represent any previous ordinal number of the requested element, nor do they represent the order of one requested element and another requested element, or the order in the manufacturing method. The use of these ordinals is only used to clearly distinguish a requested element with a certain name from another requested element with the same name.

[0064] The terms "forming" or "disposing" are used hereinafter to describe the act of applying a material layer to a substrate. These terms are intended to describe any feasible layer formation technique, including but not limited to thermal growth, sputtering, evaporation, chemical vapor deposition, epitaxial growth, electroplating, etc.

[0065] See also Figure 1 . Figure 1 FIG. 1 is a schematic diagram of an organic light emitting diode display device 101 according to a first embodiment of the present invention. Figure 1As shown, the organic light emitting diode display device 101 includes a first light emitting layer LE1, a first anode 40A, a first reflective pattern RP1 and a dielectric material 30. The first light emitting layer LE1, the first anode 40A and the first reflective pattern RP1 are located in a first sub-pixel region PX1. The first anode 40A is disposed below the first light emitting layer LE1 in a vertical direction D1, and the first reflective pattern RP1 is disposed below the first anode 40A in the vertical direction D1. The dielectric material 30 is partially disposed between the first anode 40A and the first reflective pattern RP1, and the first reflective pattern RP1 is electrically connected to the first anode 40A. By disposing the first reflective pattern RP1 electrically connected to the first anode 40A under the first anode 40A, the space between the first anode 40A and the first reflective pattern RP1 separated from each other can be used to improve the viewing angle range of the organic light emitting diode display device 101 or / and the uniformity of the display light, thereby enhancing the display effect of the organic light emitting diode display device 101.

[0066] To further illustrate, in some embodiments, the organic light emitting diode display device 101 may further include a device substrate MS, the first reflective pattern RP1, the first anode 40A, the first light emitting layer LE1 and the dielectric material 30 are disposed on the device substrate MS, the first reflective pattern RP1 may be located between the first anode 40A and the device substrate MS in the vertical direction D1, and the first reflective pattern RP1 is electrically connected to the device substrate MS. In some embodiments, the device substrate MS may include a semiconductor substrate and active (active) components, passive (passive) components or / and related circuits disposed in or / and on the semiconductor substrate. In addition, the vertical direction D1 mentioned above may be regarded as the thickness direction of the device substrate MS or / and the semiconductor substrate in the device substrate MS, the device substrate MS may have an upper surface TS and a bottom surface BS opposite to each other in the vertical direction D1, and the first reflective pattern RP1, the first anode 40A, the first light emitting layer LE1 and the dielectric material 30 mentioned above may be disposed on one side of the upper surface TS of the device substrate MS. The horizontal direction substantially orthogonal to the vertical direction D1 (e.g., the horizontal direction D2 and other directions orthogonal to the vertical direction D1) may be substantially parallel to the upper surface TS or / and the bottom surface BS of the device substrate MS, but is not limited thereto. In this document, the distance between the relatively higher position or / and component in the vertical direction D1 and the bottom surface BS of the device substrate MS in the vertical direction D1 may be greater than the distance between the relatively lower position or / and component in the vertical direction D1 and the bottom surface BS of the device substrate MS in the vertical direction D1, the lower part or bottom of each component may be closer to the bottom surface BS of the device substrate MS in the vertical direction D1 than the upper part or top of the component, another component above a certain component may be considered to be relatively far away from the bottom surface BS of the device substrate MS in the vertical direction D1, and another component below a certain component may be considered to be relatively close to the bottom surface BS of the device substrate MS in the vertical direction D1. It is worth noting that the upper surface of a component described in this article may include the topmost surface of the component in the vertical direction D1, and the bottom surface of a component may include the bottommost surface of the component in the vertical direction D1, but it is not limited to this. In addition, the situation in which a specific component is disposed between two other objects in a certain direction described in this article may include but is not limited to the situation in which the component is sandwiched between the two objects in this direction.

[0067] In some embodiments, the organic light emitting diode display device 101 may include a plurality of sub-pixel regions PX, and adjacently disposed sub-pixel regions PX may respectively emit light of different colors, thereby performing color mixing to achieve a desired display effect. For example, the first sub-pixel region PX1 may be one of the plurality of sub-pixel regions PX, the second sub-pixel region PX2 and the third sub-pixel region PX3 may be disposed adjacent to the first sub-pixel region PX1, and the first sub-pixel region PX1, the second sub-pixel region PX2 and the third sub-pixel region PX3 may be sub-pixel regions of different colors, such as a red sub-pixel region, a green sub-pixel region and a blue sub-pixel region, but is not limited thereto. In addition, the second sub-pixel region PX2 and the third sub-pixel region PX3 may respectively have structures similar to the first sub-pixel region PX1. For example, the organic light emitting diode display device 101 may further include a second light emitting layer LE2, a second anode 40B and a second reflective pattern RP2 disposed in the second sub-pixel region PX2, and a third light emitting layer LE3, a third anode 40C and a third reflective pattern RP3 disposed in the third sub-pixel region PX3, and the first light emitting layer LE1, the second light emitting layer LE2 and the third light emitting layer LE3 may be light emitting layers of different colors, respectively. The second anode 40B may be disposed below the second light emitting layer LE2 in the vertical direction D1, the second reflective pattern RP2 may be disposed below the second anode 40B in the vertical direction D1, another portion of the dielectric material 30 may be disposed between the second anode 40B and the second reflective pattern RP2 in the vertical direction D1, and the second reflective pattern RP2 may be electrically connected to the second anode 40B. The third anode 40C may be disposed under the third light-emitting layer LE3 in the vertical direction D1, the third reflection pattern RP3 may be disposed under the third anode 40C in the vertical direction D1, another portion of the dielectric material 30 may be disposed between the third anode 40C and the third reflection pattern RP3 in the vertical direction D1, and the third reflection pattern RP3 may be electrically connected to the third anode 40C.

[0068] In some embodiments, the organic light emitting diode display device 101 may further include a first reflective via structure RV1 disposed between the first anode 40A and the first reflective pattern RP1, and the first reflective pattern RP1 may be electrically connected to the first anode 40A through the first reflective via structure RV1. The reflective pattern and the reflective via structure having the ability to reflect light can be used to adjust the light output angle, light output uniformity or / and enhance the light output intensity of the sub-pixel region. However, in some embodiments, the first reflective pattern RP1 and the first anode 40A may also be electrically connected in other ways according to design requirements. In addition, the organic light emitting diode display device 101 may further include a second reflective via structure RV2 and a third reflective via structure RV3. The second reflective via structure RV2 is disposed between the second anode 40B and the second reflective pattern RP2, and the second reflective pattern RP2 may be electrically connected to the second anode 40B through the second reflective via structure RV2, and the third reflective via structure RV3 is disposed between the third anode 40C and the third reflective pattern RP3, and the third reflective pattern RP3 may be electrically connected to the third anode 40C through the third reflective via structure RV3. In some embodiments, each of the above-mentioned reflective patterns (e.g., the first reflective pattern PR1) and each reflective through-hole structure (e.g., the first reflective through-hole structure RV1) may respectively include a conductive metal material, such as aluminum (Al), silver (Ag), germanium (Ge), copper (Cu), molybdenum (Mo), titanium (Ti), tin (Sn), alloys of the above-mentioned materials, compounds or other suitable conductive materials, and the material composition of the reflective through-hole structure (e.g., the first reflective through-hole structure RV1) may be the same as the material composition of the reflective pattern (e.g., the first reflective pattern PR1), but is not limited thereto. In addition, each reflective through-hole structure (e.g., the first reflective through-hole structure RV1) may be directly connected to the corresponding reflective pattern (e.g., the first reflective pattern PR1) and the anode (e.g., the first anode 40A), but is not limited thereto.

[0069] In some embodiments, the anodes in different sub-pixel regions PX may be physically and electrically separated from each other because of the need to control the light-emitting state of the corresponding light-emitting layer. Therefore, the first anode 40A, the second anode 40B and the third anode 40C may be physically and electrically separated from each other, and the corresponding first reflective pattern RP1, the second reflective pattern RP2 and the third reflective pattern RP3 are also physically and electrically separated from each other. Each of the above-mentioned anodes (such as the first anode 40A) may include a transparent conductive material, such as a transparent conductive oxide (transparent conducting oxide, TCO) or other suitable transparent conductive materials. The above-mentioned transparent conductive oxide may include indium tin oxide (ITO), indium zinc oxide (IZO) or other suitable transparent conductive oxides. The dielectric material 30 may include a single layer or multiple layers of dielectric materials, such as silicon oxide, silicon nitride, aluminum oxide, organic dielectric materials (such as acrylic polymer materials and / or siloxane polymer materials) or other suitable dielectric materials. In addition, the organic light emitting diode display device 101 may further include an isolation structure 50 and a cathode 60, the isolation structure 50 may be disposed between each light emitting layer (e.g., the first light emitting layer LE1, the second light emitting layer LE2, and the third light emitting layer LE3), and the cathode 60 may be disposed on each light emitting layer and the isolation structure 50. The cathode 60 may include a transparent conductive material, such as a transparent conductive oxide or other suitable transparent conductive material, and the isolation structure 50 may include an insulating material, such as a light-shielding insulating material with a high optical density (OD), but is not limited thereto. In addition, each of the above-mentioned light emitting layers may include an organic light emitting structure having a multi-layer material stack or other suitable light emitting structure. For example, the organic light-emitting structure may include an electron injection layer, an electron transport layer, an organic electroluminescent material layer, a hole injection layer and a hole transport layer (not shown), the electron injection layer and the electron transport layer may be disposed between the organic electroluminescent material layer and the cathode 60, and the hole injection layer and the hole transport layer may be disposed between the organic electroluminescent material layer and each anode (e.g., the first anode 40A, the second anode 40B and the third anode 40C), but not limited thereto. The material compositions of the organic electroluminescent material layers in the first light-emitting layer LE1, the second light-emitting layer LE2 and the third light-emitting layer LE3 may be different from each other, thereby producing light-emitting effects of different colors.

[0070] In some embodiments, the reflective through-hole structure connected to each anode may not be disposed directly below the corresponding light-emitting layer in the vertical direction D1, thereby avoiding affecting the light reflection effect of the reflective pattern. For example, in the vertical direction D1 or / and when the organic light-emitting diode display device 101 is viewed in the vertical direction D1, the first light-emitting layer LE1 does not overlap with the first reflective through-hole structure RV1, but the present invention is not limited thereto. In some embodiments, the organic light-emitting diode display device 101 may further include a dielectric layer 20 and a plurality of conductive through-holes CV, the dielectric layer 20 being disposed between the device substrate MS and each reflective pattern (e.g., the first reflective pattern RP1, the second reflective pattern RP2, and the third reflective pattern RP3), and the plurality of conductive through-holes CV may be disposed in the dielectric layer 20. Each conductive through-hole CV may be electrically connected to the device substrate MS and the corresponding reflective pattern, respectively, so the device substrate MS may be electrically connected to each reflective pattern (e.g., the first reflective pattern RP1, the second reflective pattern RP2, and the third reflective pattern RP3) through the conductive through-holes CV. The dielectric layer 20 may include a single layer or multiple layers of dielectric materials, such as silicon oxide, silicon nitride, silicon oxynitride or other suitable dielectric materials, and each conductive via CV may include a barrier layer and a low-resistance material disposed on the barrier layer. The low-resistance material may include a material with relatively low resistivity such as copper, aluminum, tungsten, etc., and the barrier layer may include titanium nitride, tantalum nitride or other suitable conductive barrier materials, but is not limited thereto.

[0071] The following will describe different embodiments of the present invention, and for simplicity, the following description will mainly describe the differences between the embodiments, and will not repeat the same parts. In addition, the same elements in the embodiments of the present invention are marked with the same reference numerals to facilitate comparison between the embodiments.

[0072] See also Figure 2 and Figure 3 . Figure 2 FIG. 1 is a schematic diagram of an organic light emitting diode display device 102 according to a second embodiment of the present invention. Figure 3 FIG. 1 is a top view of an organic light emitting diode display device according to the present embodiment, and FIG. Figure 3 Only the top view of the configuration of the light-emitting layer, the reflective pattern and the reflective through-hole structure in the organic light-emitting diode display device is shown. Figure 2 and Figure 3As shown, in the organic light emitting diode display device 102, an upper portion P2 of the first reflective through hole structure RV1 is connected to the first anode 40A, a lower portion P1 of the first reflective through hole structure RV1 is connected to the first reflective pattern RP1, and a width W1 of the lower portion P1 is greater than a width W2 of the upper portion P2. In other words, the cross-sectional shape of the first reflective through hole structure RV1 may include a trapezoidal structure that is narrow at the top and wide at the bottom, but is not limited thereto. In some embodiments, the first reflective through hole structure RV1 may surround a portion of the dielectric material 30 located between the first anode 40A and the first reflective pattern RP1 in the horizontal direction. In addition, the sidewall SW of the first reflective through hole structure RV1 and the upper surface TS1 of the first reflective pattern RP1 form a recessed structure RS, and a portion of the dielectric material 30 may be disposed in the recessed structure RS. In some embodiments, the sidewall SW of the first reflective through hole structure RV1 may be a plane, but is not limited thereto. In addition, the projection area of ​​the recessed structure RS in the vertical direction D1 may be larger than the projection area of ​​the first light emitting layer LE1 in the vertical direction D1, thereby preventing the first light emitting layer LE1 from overlapping with the first reflective through hole structure RV1 in the vertical direction D1 and affecting the reflection effect. In addition, the second reflective through hole structure RV2 disposed in the second sub-pixel area PX2 and the third reflective through hole structure RV3 disposed in the third sub-pixel area PX3 may also have the same structure as the first reflective through hole structure RV1 and may form the recessed structure RS with the second reflective pattern PR2 and the third reflective pattern PR3, respectively.

[0073] See also Figure 4 . Figure 4 FIG. 1 is a schematic diagram of an organic light emitting diode display device 103 according to a third embodiment of the present invention. Figure 4 As shown, in the organic light emitting diode display device 103, the side wall SW of the first reflective through hole structure RV1 may include a curved surface, and the recessed structure RS may be a concave mirror located below the first light emitting layer LE1 in the vertical direction D1, thereby improving the display brightness or / and adjusting the focus position of the display light to meet the display requirements of a specific product. In some embodiments, the conductive metal material layer may be etched in sections using different etching methods to form a reflective through hole structure with a curved inner sidewall, but the invention is not limited thereto.

[0074] See also Figure 5 . Figure 5 FIG. 1 is a schematic diagram of an organic light emitting diode display device 104 according to a fourth embodiment of the present invention. Figure 5As shown, in the organic light emitting diode display device 104, the device substrate MS may include a semiconductor substrate 10 and a plurality of transistors TR (for example, a transistor TR1 disposed in the first sub-pixel region PX1, a transistor TR2 disposed in the second sub-pixel region PX2, and a transistor TR3 disposed in the third sub-pixel region PX3), and the organic light emitting diode display device 104 may further include a plurality of contact structures CT and an interconnect structure CS disposed in the dielectric layer 20. The semiconductor substrate 10 may include a silicon substrate, a silicon germanium semiconductor substrate, a silicon-on-insulator (SOI) substrate, or a substrate formed of other suitable semiconductor materials, and the organic light emitting diode display device 104 may therefore be regarded as an OLEDoS (OLED on silicon) display device, but is not limited thereto. The transistor TR may be partially disposed in the semiconductor substrate 10, and the transistor TR may be electrically connected to the corresponding anode through the corresponding reflective pattern. For example, the transistor TR may include a gate dielectric layer GI and a gate GE disposed on a semiconductor substrate 10, and a well region 12 and a source / drain region SD disposed in the semiconductor substrate 10, and the isolation structure 14 may be at least partially disposed in the semiconductor substrate 10 to isolate adjacent transistors TR. One of the transistors TR (e.g., transistor TR1) may be electrically connected to a corresponding anode (e.g., first anode 40A) through a contact structure CT, an interconnection structure CS, a conductive via CV, a reflective pattern (e.g., a first reflective pattern RP1), and a reflective via structure (e.g., a first reflective via structure RV1). The contact structure CT and the interconnection structure CS may include a barrier layer and a low-resistance material disposed on the barrier layer. The low-resistance material may include a material with a relatively low resistivity such as copper, aluminum, tungsten, etc., and the barrier layer may include titanium nitride, tantalum nitride, or other suitable conductive barrier materials, but not limited thereto. In some embodiments, the material composition of each reflective pattern may be different from the material composition of the conductive via CV, the interconnection structure CS, or / and the contact structure CT. For example, the reflective pattern may be formed using a metal conductive material with a better light reflection effect, but not limited thereto. In addition, it is worth noting that the device substrate MS of this embodiment may also be applied to other embodiments of the present invention according to design requirements.

[0075] In summary, in the organic light emitting diode display device of the present invention, a reflective pattern electrically connected to the anode but not directly connected to the anode can be provided below the anode in the sub-pixel region, thereby improving the viewing angle range of the display device, the uniformity of the displayed light, and / or meeting the display requirements of specific products.

[0076] The above descriptions are only preferred embodiments of the present invention. All equivalent changes and modifications made according to the claims of the present invention should fall within the scope of the present invention.

Claims

1. An organic light emitting diode display device, comprising: A first light emitting layer is located in the first sub-pixel region; A first anode is disposed below the first light emitting layer in a vertical direction and is located in the first sub-pixel region; A first reflective pattern, disposed below the first anode in the vertical direction and located in the first sub-pixel region; as well as The dielectric material is partially disposed between the first anode and the first reflective pattern, wherein the first reflective pattern is electrically connected to the first anode.

2. The organic light emitting diode display device according to claim 1, further comprising: The first reflective through-hole structure is disposed between the first anode and the first reflective pattern, wherein the first reflective pattern is electrically connected to the first anode through the first reflective through-hole structure. 3 . The organic light emitting diode display device as claimed in claim 2 , wherein a material composition of the first reflective through-hole structure is the same as a material composition of the first reflective pattern. 4 . The organic light emitting diode display device as claimed in claim 2 , wherein the first reflective through-hole structure is directly connected to the first reflective pattern and the first anode respectively.

5. The organic light emitting diode display device as claimed in claim 2, wherein an upper portion of the first reflective through hole structure is connected to the first anode, a lower portion of the first reflective through hole structure is connected to the first reflective pattern, and a width of the lower portion is greater than a width of the upper portion. 6 . The organic light emitting diode display device as claimed in claim 2 , wherein the first reflective through hole structure surrounds a portion of the dielectric material between the first anode and the first reflective pattern. 7 . The organic light emitting diode display device as claimed in claim 2 , wherein a side wall of the first reflective through-hole structure and an upper surface of the first reflective pattern form a concave structure. 8 . The organic light emitting diode display device as claimed in claim 7 , wherein a projection area of ​​the recessed structure in the vertical direction is larger than a projection area of ​​the first light emitting layer in the vertical direction. 9 . The organic light emitting diode display device as claimed in claim 7 , wherein the recessed structure is a concave mirror located below the first light emitting layer in the vertical direction. 10 . The organic light emitting diode display device as claimed in claim 2 , wherein a sidewall of the first reflective through hole structure is a plane. 11 . The organic light emitting diode display device as claimed in claim 2 , wherein a sidewall of the first reflective through hole structure is a curved surface. 12 . The organic light emitting diode display device as claimed in claim 2 , wherein when the organic light emitting diode display device is viewed in the vertical direction, the first light emitting layer does not overlap with the first reflective through hole structure. 13 . The organic light emitting diode display device as claimed in claim 1 , wherein the first anode comprises a transparent conductive material. 14 . The organic light emitting diode display device as claimed in claim 1 , wherein the first reflective pattern comprises a conductive metal material.

15. The organic light emitting diode display device according to claim 1, further comprising: A second light emitting layer is located in the second sub-pixel region; A second anode, disposed below the second light-emitting layer in the vertical direction and located in the second sub-pixel region; a second reflective pattern disposed below the second anode in the vertical direction and in the second sub-pixel region, wherein the dielectric material is also partially disposed between the second anode and the second reflective pattern; and The second reflective through-hole structure is disposed between the second anode and the second reflective pattern, wherein the second reflective pattern is electrically connected to the second anode through the second reflective through-hole structure. 16 . The organic light emitting diode display device as claimed in claim 15 , wherein the first reflective pattern and the second reflective pattern are physically and electrically separated from each other.

17. The organic light emitting diode display device according to claim 15, further comprising: The cathode is disposed on the first light-emitting layer and the second light-emitting layer, wherein the first anode and the second anode are physically and electrically separated from each other.

18. The organic light emitting diode display device according to claim 1, further comprising: The device substrate comprises a first reflection pattern, a first anode and a first light-emitting layer, wherein the first reflection pattern is located between the first anode and the device substrate, and the first reflection pattern is electrically connected to the device substrate.

19. The organic light emitting diode display device according to claim 18, further comprising: A dielectric layer disposed between the device substrate and the first reflective pattern; as well as The conductive via is disposed in the dielectric layer, wherein the conductive via is electrically connected to the first reflective pattern and the device substrate respectively.

20. The organic light emitting diode display device as claimed in claim 18, wherein the device substrate comprises: Semiconductor substrate; as well as A plurality of transistors, wherein each of the transistors is partially disposed in the semiconductor substrate, and one of the transistors is electrically connected to the first anode through the first reflective pattern.

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