Display device

Abstract

Disclosed is a display device including: a substrate including a display area on which a plurality of pixels are disposed, a camera hole in the display area, and a first non-display area between the display area and the camera hole, in which the first non-display area includes a break area provided with at least one dam structure, in which at least one dam structure is disposed between the break area and the camera hole; each of the plurality of pixels includes a first transistor and a second transistor on a gate electrode of the first transistor, and a plurality of buffer layers under the first transistor and the second transistor, where the plurality of buffer layers extend to the first non-display area, and where the plurality of buffer layers extend to the second non-display area. The first non-display area includes a high potential power line and a gate line between the at least one dam structure and the display area.

Description

[0001] This application is a divisional application of the application with application number 202110737739.0, application date June 28, 2021, and invention name “Display Device”.

[0002] CROSS-REFERENCE TO RELATED APPLICATIONS

[0003] This application claims the priority of Korean Patent Application No. 10-2020-0080319 filed on June 30, 2020 in the Korean Intellectual Property Office, the disclosure of which is incorporated herein by reference. Technical Field

[0004] The present disclosure relates to a display device, and more particularly, to a display device having a camera hole disposed therein. Background Art

[0005] With the recent trend toward the information age, the field of display that visually displays electrical information signals has been rapidly developed. In this regard, various display devices having excellent properties such as slimness, light weight, and low power consumption have been developed.

[0006] Specific examples of the display device may include a liquid crystal display (LCD) device, an organic light emitting diode (OLED) display device, a quantum dot display device, and the like.

[0007] The display device may include a display panel and many components for providing various functions. For example, in an existing display device, a camera and various optical sensors are arranged outside the display panel, and perform various functions such as photography, facial recognition, and infrared distance measurement. However, with the passage of generations, so-called borderless or borderless designs are becoming more and more common. When a user views the display device, the so-called borderless or borderless designs appear to have a complete display area, which makes it difficult to set the camera and optical sensor outside the display panel. In order to achieve a borderless or borderless design, research has been conducted to move the camera and optical sensor inward to the effective area of ​​the display panel. As a result of the research, a technology called in-hole display has been developed to form a hole in the display panel and to set the camera and optical sensor in the hole in the display panel.

[0008] With the development of in-hole display and the movement of all cameras and sensors set in the existing bezel area to the inside of the display panel area, the ultimate bezel-less or bezel-free design can be applied to the display device. Summary of the invention

[0009] The inventors of the present disclosure have conducted research to reduce the space used to set cameras and various sensors in recent smart devices. In order to set cameras and sensors, it is necessary to provide a portion of the front surface of the display area in the smart device for the cameras and sensors, thereby reducing the display area of ​​the display panel. In addition, various types of cameras and sensors tend to be set on the front surface of the display area, so it is necessary to further overcome the limitations of the display area. For example, various components such as a front wide-angle camera, a depth camera, and a facial recognition sensor or an infrared ranging sensor can be set on the front surface of the display device. Therefore, due to the expansion of the non-display area for setting components, a side effect of reducing aesthetics has occurred. In-hole display has been developed for setting cameras and sensors on the front surface of the display area while maintaining the display area, but side effects have also occurred due to in-hole display. In order to achieve in-hole display, the inventors have recognized that it is necessary to suppress the occurrence of cracks and the penetration of moisture into the camera hole area, and various technologies are required for this.

[0010] Therefore, the inventors of the present disclosure have developed a new structure and a manufacturing method for suppressing the penetration of moisture and oxygen through an organic light emitting stack while suppressing cracks caused by the transfer of heat energy generated when cutting a substrate using a laser.

[0011] For example, the inventors of the present disclosure have confirmed that when a laser is irradiated to a cut portion of a substrate, heat energy is transferred through the substrate, and such heat energy may cause deformation of an organic insulating film or an inorganic insulating film arranged sequentially from the display area. The deformation thus generated may gradually increase to form cracks due to the phenomenon of stress concentration at the defective portion of the substrate. The cracks thus formed have the following characteristics: the cracks are easily propagated through the insulating film, especially the inorganic insulating film, so that the cracks may propagate to the display area of ​​the display panel, and the display performance may deteriorate. In order to suppress cracks caused by deformation, the area where the organic insulating film or the inorganic insulating film is removed can be set to be spaced a certain distance from the laser irradiation area. Therefore, even if the substrate is removed by laser, the substrate with low thermal conductivity absorbs all the generated heat energy and does not transfer the heat energy to the organic insulating film or the inorganic insulating film. Therefore, cracks due to deformation of the insulating film can be suppressed.

[0012] The inventors of the present disclosure have confirmed the following characteristics: when moisture penetrates through the organic light-emitting stack exposed during the formation of the camera hole area, the moisture reacts and propagates along the organic light-emitting stack. The propagated moisture may reach the pixels set in the display area of ​​the display panel, resulting in degradation of display performance. The inventors have proposed a new structure for suppressing the propagation of moisture through the organic light-emitting stack. By using the characteristics formed by chemical vapor deposition during the formation of the organic light-emitting stack, the area where the organic light-emitting stack is disconnected can be set near the camera hole area. Therefore, it is possible to suppress the moisture and oxygen introduced from the camera hole area from being transferred from the area where the organic light-emitting stack is disconnected to the display area in the display panel. By setting the area where the organic light-emitting stack is cut near the camera hole area, the propagation of moisture and oxygen into the display area of ​​the display panel can be suppressed.

[0013] The foreign matter compensation layer of the encapsulation layer for protecting the organic light-emitting device can be suppressed from overflowing into the camera hole area, and by setting a structure for suppressing interference between a camera or sensor to be set in the camera hole area and the foreign matter compensation layer, defects such as lifting generated when the structure is coupled to the upper substrate or contamination of the camera can be reduced.

[0014] Regarding the design of a frameless or frameless display panel which is a development trend of display devices, it is important to provide a hole for providing a camera and a sensor in a display region while suppressing deterioration in display quality.

[0015] According to one aspect of the present disclosure, a display device includes: a substrate including a display area and at least one non-display area; a light emitting device and a plurality of transistors disposed in the display area on the substrate; and a power wiring disposed in the non-display area and electrically connected to the plurality of transistors and the light emitting device, wherein at least one non-display area includes a camera hole area and a disconnection area, and the disconnection area has a closed loop shape to surround the camera hole area. For example, the display device is more stable against the penetration of moisture and oxygen.

[0016] According to another aspect of the present disclosure, a display device includes: a substrate including a light-emitting device and a plurality of transistors; a camera hole arranged near the light-emitting device and the plurality of transistors; and at least one disconnected portion and at least one dam portion arranged to surround the camera hole, wherein the at least one disconnected portion includes at least one disconnected structure, and the at least one dam portion and the at least one disconnected structure are alternately arranged with each other.

[0017] Additional details of exemplary embodiments are included in the detailed description and the accompanying drawings.

[0018] According to an exemplary embodiment of the present disclosure, a display device may be provided in which a camera hole area may be provided within a display area of ​​a display panel so that the overall appearance of the display panel is a thin or narrow frame.

[0019] Therefore, the user of the display device can use an aesthetic device with a complete light-emitting screen on the front surface of the display device, and use a compact module that is functionally applied to a narrow frame, so that the user can be provided with a display device with excellent grip and light weight.

[0020] In a display device according to an exemplary embodiment of the present disclosure, the penetration of moisture and oxygen introduced from the camera hole can be suppressed by forming a plurality of disconnection areas at the periphery of the camera hole. The disconnection area can cut off the connection with the organic common layer (that is, the light-emitting stack) of the light-emitting device disposed on the front surface of the display panel, thereby blocking the movement path of moisture and oxygen.

[0021] In the organic material deposition process for forming the light-emitting stack, based on the flatness of the organic material, the vertical structure of the structure in the disconnected region can be increased to form a long side or a side of different widths of the structure in the disconnected region. The organic material may not be stacked or may be unevenly stacked in an area not shown in the deposition direction of the organic material or on a side perpendicular to the deposition direction through the side of the structure in the disconnected region. Therefore, the material constituting the light-emitting stack may not be stacked on the side of the structure in the disconnected region, or may be unevenly stacked, thereby structurally separating the light-emitting stack.

[0022] A plurality of dams and a plurality of structures are provided in the disconnection area so that the foreign matter compensation layer of the encapsulation layer may not overflow into the camera hole. The plurality of dams and the plurality of structures can suppress contamination of the camera hole area and interference with a camera to be provided in the camera hole area when the foreign matter compensation layer overflows into the camera hole.

[0023] When the disconnection structure is arranged around the dam provided in the disconnection area, more structures can be arranged in the structure adjacent to the dam to form a structure higher than other structures. As a result, the foreign matter compensation layer that can overflow near the dam can be suppressed by supplementing the disconnection structure.

[0024] The organic material layer may also be disposed in a structure disposed in a disconnected region so that the height of the structure may be increased or a wider region may be formed to be shielded when depositing the organic material to ensure separation of the light emitting stack.

[0025] The effects according to the present disclosure are not limited to those exemplified above, and more effects are included in the present specification.

[0026] It is to be understood that both the foregoing general description and the following detailed description are exemplary and explanatory and are intended to provide further explanation of the inventive concepts as claimed. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] The above and other aspects, features and other advantages of the present disclosure will be more clearly understood from the following detailed description in conjunction with the accompanying drawings, in which:

[0028] Figure 1 is a view showing a front surface of a display panel according to an exemplary embodiment of the present disclosure;

[0029] Figure 2 By magnifying Figure 1 A area in the figure shows a plan view of the display area;

[0030] Figure 3 It is along Figure 2 A cross-sectional view of a sub-pixel taken along line II′ in FIG.

[0031] Figure 4 By magnifying Figure 1 The B area in FIG. 1 is used to show an enlarged plan view of the camera hole;

[0032] Figure 5 By magnifying Figure 4 A plan view of the periphery of the camera hole in area C;

[0033] Figure 6 It is along Figure 4 A cross-sectional view of the camera aperture area taken along line II-IV in FIG.

[0034] Figure 7 According to another exemplary embodiment, Figure 4 A cross-sectional view of the periphery of the camera aperture taken along line III-V in FIG.

[0035] Figure 8 By magnifying Figure 7 The D area in FIG. 1 is used to show a cross-sectional view of the disconnected structure and the dam area;

[0036] Fig.9A It is along Figure 5 A cross-sectional view of another exemplary embodiment taken along line III-IV in FIG.

[0037] Fig. 9B It is along Figure 5 A cross-sectional view of another exemplary embodiment taken along line III-IV in FIG. DETAILED DESCRIPTION

[0038] By referring to the exemplary embodiments described in detail below and the accompanying drawings, the advantages and characteristics of the present disclosure and the methods for achieving the advantages and characteristics will become clear. However, the present disclosure is not limited to the exemplary embodiments disclosed herein, but will be implemented in various forms. Exemplary embodiments are provided only by way of example so that those skilled in the art can fully understand the disclosure of the present disclosure and the scope of the present disclosure. Therefore, the present disclosure will be limited only by the scope of the appended claims.

[0039] The shapes, sizes, ratios, angles, numbers, etc. of the exemplary embodiments for describing the present disclosure shown in the accompanying drawings are merely examples, and the present disclosure is not limited thereto. Throughout the specification, the same reference numerals generally represent the same elements. In addition, in the following description of the present disclosure, the detailed description of known related technologies may be omitted to avoid unnecessarily obscuring the subject matter of the present disclosure. Unless the terms such as "including", "having" and "consisting of..." used herein are used together with the term "only", these terms are generally intended to allow the addition of other components. Unless otherwise expressly stated, any reference to the singular may include the plural.

[0040] Even if not explicitly stated, the components are interpreted as including ordinary error ranges.

[0041] When terms such as “on,” “above,” “below,” and “near” are used to describe the positional relationship between two components, unless these terms are used together with the term “immediately” or “directly,” one or more components may be located between the two components.

[0042] When terms such as "after", "subsequently", "immediately" and "before" are used to describe a time order between two or more events, the two or more events may not be consecutive unless these terms are used with the term "immediately" or "directly".

[0043] Although the terms "first", "second", etc. are used to describe various components, these components are not limited by these terms. These terms are only used to distinguish one component from other components. Therefore, in the technical concept of the present disclosure, the first component to be mentioned below may be the second component.

[0044] When describing elements of the present disclosure, terms such as "first," "second," "A," "B," "(a)," and "(b)" may be used. These terms are used only to distinguish one element from another, and the nature, sequence, order, or number of the corresponding elements is not limited by these terms. It will be understood that when an element is described as being "connected," "coupled," or "adhered" to another element, the element may be directly connected or adhered to the other element or layer, but other elements or layers may be "disposed" between elements, or elements may be "connected," "coupled," or "adhered" to each other through other elements.

[0045] The "display device" herein may be used to cover a display device in a narrow sense, which includes a display panel and a driving unit for driving the display panel, such as a liquid crystal module (LCM), an organic light emitting diode (OLED) module, and a quantum dot module. In addition, the display device herein may also include an equipment display device, which includes a complete product or final product including an LCM, an OLED, a QD module, etc., for example, a notebook computer, a television, a computer monitor, a car display or other display of a vehicle, and a kit electronic device or kit device (kit device) such as a mobile electronic device (such as a smart phone or an electronic tablet).

[0046] Therefore, the display device herein may include an application product or a kit device such as a final product including an LCM, an OLED, and a QD module as well as a display device itself in a narrow sense such as an LCM, an OLED, and a QD module.

[0047] If necessary, LCM, OLED and QD modules provided with a display panel, a driving unit, etc. may be expressed as a "display device" in a narrow sense, and an electronic device as a final product including the LCM, OLED and QD modules may be expressed as a "kit device". For example, a display device in a narrow sense may include a display panel such as an LCD, OLED and QD module and a source printed circuit board (source PCB) corresponding to a control unit for driving the display panel. In addition, in the case of a kit device, it may include a kit PCB corresponding to a kit control unit, which is electrically connected to the source PCB so as to control the entire kit device.

[0048] The display panel applied to the exemplary embodiment may use any type of display panel, such as a liquid crystal display panel, an organic light emitting diode (OLED) display panel, a quantum dot (QD) display panel, and an electroluminescent display panel. The display panel of the present embodiment is not limited to a specific display panel including a flexible substrate for an OLED display panel and a backplane support structure below the substrate that enables the frame to be bent. In addition, the display panel applied to the display device according to the exemplary embodiment of the present disclosure is not limited to its shape or size.

[0049] More specifically, if the display panel is an OLED display panel, the display panel may include a plurality of gate lines, a plurality of data lines, and a plurality of pixels respectively formed at the intersections of the gate lines and the data lines. In addition, the display panel may include: an array including a thin film transistor configured to selectively apply a voltage to each pixel; an OLED layer on the array; an encapsulation substrate or an encapsulation layer disposed on the array to cover the OLED layer, etc. The encapsulation layer may protect the thin film transistor and the OLED layer from external impacts and inhibit moisture and oxygen from penetrating into the OLED layer. In addition, the layer formed on the array may include an inorganic light-emitting layer, such as a nano-sized material layer or quantum dots.

[0050] In this disclosure, Figure 1 An exemplary organic light emitting diode (OLED) display panel 100 that may be integrated into a display device is shown.

[0051] Figure 1 is a plan view of a display panel 100 according to an exemplary embodiment of the present disclosure. Figure 1 An exemplary organic light emitting diode (OLED) display panel 100 that can be integrated into a display device is shown. Figure 1 In the OLED display panel 100, the hole CH for the camera and the sensor is provided in the display area AA to reduce the bezel area as the non-display area and maximize the display area AA. A product having a design that maximizes the display area AA may be aesthetically preferred by maximizing the user's immersion in viewing an image.

[0052] One hole for camera and sensor CH Figure 1 The display area AA may be provided with a plurality of holes CH for cameras and sensors. For example, one or two holes may be provided in the display area AA. The camera may be provided in the first hole, and the distance sensing sensor or the facial recognition sensor and the wide-angle camera may be provided in the second hole.

[0053] Figure 2An enlarged A region is shown, which is a part of the display region AA of the display panel 100 , and shows sub-pixels arranged in the display region AA on a plane.

[0054] exist Figure 2 In the display panel 100, a plurality of anodes 151 are arranged in the display area AA, and the area between the anodes 151 and the anodes 151 is filled with a levee 154. The levee 154 may be arranged to cover the edge of the anode 151, and is used to define the light-emitting area of ​​the sub-pixel by making only the middle area of ​​the anode 151 contact the organic light-emitting stack. The spacer 155 may be arranged in a portion of the area in which the levee 154 is arranged. The spacer 155 may be arranged to have a certain density in the entire display panel 100. When a deposition process is performed to form the organic light-emitting stack, the spacer 155 may be used to support a mask for deposition so that the mask does not directly contact the display panel 100, which shields or opens the organic layer of each sub-pixel. Figure 2 A pentile type planar structure in which sub-pixels are arranged in a dot pattern is shown as an example, but the present disclosure is not limited thereto, and a real type planar structure may also correspond to this example.

[0055] Figure 3 Shown along Figure 2 A cross-sectional view of a sub-pixel taken along line II′ in FIG.

[0056] Reference Figure 3 , the sub-pixel may include a substrate 101, a multi-buffer layer 102, and a lower buffer layer 103, and the first transistor 120 may be disposed on the lower buffer layer 103. A first semiconductor layer 123 constituting the first transistor 120 may be disposed on the lower buffer layer 103, and a lower gate insulating film 104 for insulating the first semiconductor layer 123 from the first gate electrode 122 may be disposed on the first semiconductor layer 123. A first lower interlayer insulating film 105, a second lower interlayer insulating film 106, and an upper buffer layer 107 are sequentially disposed on the first gate electrode 122.

[0057] The multi-buffer layer 102 may delay diffusion of moisture and oxygen penetrating into the substrate 101, and may be formed of silicon nitride (SiNx) and silicon oxide (SiOx) alternately stacked at least once.

[0058] The lower buffer layer 103 may protect the first semiconductor layer 123 and perform a function of preventing various defects introduced from the substrate. The lower buffer layer 103 may be formed of a-Si, silicon nitride (SiNx), silicon oxide (SiOx), or the like.

[0059] The first semiconductor layer 123 of the first thin film transistor 120 may be formed of a polycrystalline semiconductor layer, and the first semiconductor layer 123 may have a channel region, a source region, and a drain region.

[0060] The polycrystalline semiconductor layer has low power consumption and excellent reliability due to higher mobility than an amorphous semiconductor layer and an oxide semiconductor layer. Due to these advantages, the polycrystalline semiconductor layer can be used in a driving transistor.

[0061] The first gate electrode 122 may be disposed on the lower gate insulating film 104 to overlap the first semiconductor layer 123 .

[0062] The second transistor 130 may be disposed on the upper buffer layer 107, and the light shielding layer 136 may be disposed on a lower portion of a region corresponding to the second transistor 130. Figure 3 , a light shielding layer 136 may be disposed on the first lower interlayer insulating film 105 in a region corresponding to the second transistor 130, and a second semiconductor layer 133 of the second transistor 130 may be disposed on the second lower interlayer insulating film 106 and the upper buffer layer 107 to overlap the light shielding layer 136. An upper gate insulating film 137 for insulating the second gate electrode 132 and the second semiconductor layer 133 may be disposed on the second semiconductor layer 133, and an upper interlayer insulating film 108 may be disposed on the second gate electrode 132 in turn. The first gate electrode 122 and the second gate electrode 132 may be a single layer or a plurality of layers formed of any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd), and copper (Cu), or alloys thereof. However, the present disclosure is not limited thereto.

[0063] The first lower interlayer insulating film 105 and the second lower interlayer insulating film 106 may be formed of an inorganic film having a higher hydrogen particle content than the upper interlayer insulating film 108. For example, the first lower interlayer insulating film 105 and the second lower interlayer insulating film 106 may be formed by using NH 3The deposition process of the gas is formed by silicon nitride (SiNx), and the upper interlayer insulating film 108 can be formed by silicon oxide (SiOx). The hydrogen particles contained in the first lower interlayer insulating film 105 and the second lower interlayer insulating film 106 can diffuse into the polycrystalline semiconductor layer in the hydrogenation process so that the pores in the polycrystalline semiconductor layer are filled with hydrogen. Therefore, the polycrystalline semiconductor layer is stabilized, thereby suppressing the degradation of the properties of the first transistor 120. After the activation and hydrogenation process of the first semiconductor layer 123 of the first transistor 120, the second semiconductor layer 133 of the second transistor 130 can be formed, and at this time, the second semiconductor layer 133 can be formed as an oxide semiconductor. Since the second semiconductor layer 133 is not exposed to the high temperature atmosphere of the activation and hydrogenation process of the first semiconductor layer 123, the damage of the second semiconductor layer 133 can be suppressed, thereby improving reliability. After the upper interlayer insulating film 108 is provided, the first source contact hole 125S and the first drain contact hole 125D may be formed to correspond to the source region and the drain region of the first transistor, respectively, and the second source contact hole 135S and the second drain contact hole 135D may be formed to correspond to the source region and the drain region of the second transistor 130, respectively. Figure 3 , the first source contact hole 125S and the first drain contact hole 125D may be formed with holes continuous from the upper interlayer insulating film 108 to the lower gate insulating film 104, and the second transistor 130 may be formed with the second source contact hole 135S and the second drain contact hole 135D. The first source electrode 121 and the first drain electrode 124 corresponding to the first transistor 120, and the second source electrode 131 and the second drain electrode 134 corresponding to the second transistor 130 are formed at the same time. Therefore, the number of processes for forming the respective source electrodes and the drain electrodes of the first transistor 120 and the second transistor 130 can be reduced.

[0064] The first source electrode 121 and the first drain electrode 124 and the second source electrode 131 and the second drain electrode 134 may be a single layer or multiple layers formed by any one of molybdenum (Mo), aluminum (Al), chromium (Cr), gold (Au), titanium (Ti), nickel (Ni), neodymium (Nd) and copper (Cu) or their alloys. However, the present disclosure is not limited to this. The first source electrode 121 and the first drain electrode 124 and the second source electrode 131 and the second drain electrode 134 may be formed by a three-layer structure. For example, the first source electrode 121 may include a first layer 121a, a second layer 121b and a third layer 121c, and the other source electrodes and drain electrodes may have the same structure.

[0065] The storage capacitor 140 may be disposed between the first transistor 120 and the second transistor 130. Figure 3As shown in , the storage capacitor 140 may be formed to overlap the storage lower electrode 141 and the storage upper electrode 142 with the first lower interlayer insulating film 105 interposed therebetween.

[0066] The storage lower electrode 141 is located on the lower gate insulating film 104 and may be formed on the same layer as the first gate electrode 122 and formed of the same material as the first gate electrode 122. The storage upper electrode 142 may be electrically connected to the pixel circuit through the storage power supply line 143. The storage upper electrode 142 may be formed on the same layer as the light shielding layer 136 and formed of the same material as the light shielding layer 136. The storage upper electrode 142 may be exposed through a storage contact hole 144 that penetrates the second lower interlayer insulating film 106, the upper buffer layer 107, the upper gate insulating film 137, and the upper interlayer insulating film 108 and is connected to the storage power supply line 143. On the other hand, as Figure 3 , the storage upper electrode 142 is spaced apart from the light shielding layer 136, but may be integrally formed to be connected to the light shielding layer 136. The storage power supply line 143 may be formed on the same surface as the first source electrode 121 and the first drain electrode 124 and the second source electrode 131 and the second drain electrode 134 and may be formed of the same material as the first source electrode 121 and the first drain electrode 124 and the second source electrode 131 and the second drain electrode 134. Therefore, the storage power supply line 143 may be simultaneously formed by the same mask process as the first source electrode 121 and the first drain electrode 124 and the second source electrode 131 and the second drain electrode 134.

[0067] An inorganic insulating material such as SiNx or SiOx is completely deposited on the first source electrode 121 and the first drain electrode 124, the second source electrode 131 and the second drain electrode 134, and the substrate 101 on which the storage power supply line 143 is formed, so that the protective film 109 may be formed. The first planarization layer 110 may be formed on the substrate 101 on which the protective film 109 is formed. Specifically, an organic insulating material such as an acrylic resin is completely applied on the substrate 101 on which the protective film 109 is formed, so that the first planarization layer 110 may be provided on the substrate 101.

[0068] The protective film 109 and the first planarization layer 110 are disposed on the substrate 101, and a contact hole exposing the first source electrode 121 or the first drain electrode 124 of the first transistor 120 may be formed by a photolithography process. The connection electrode 145 may be disposed in a contact hole region exposing the first drain electrode 124, the contact hole region having a material formed of Mo, Ti, Cu, AlNd, Al, and Cr, or an alloy thereof.

[0069] The second planarization layer 111 may be disposed on the connection electrode 145 , and a contact hole exposing the connection electrode 145 to the second planarization layer 111 may be formed to dispose the light emitting device 150 to be connected to the first transistor 120 .

[0070] The light emitting device 150 may include: an anode electrode 151 connected to the first drain electrode 124 of the first transistor 120 ; at least one light emitting stack 152 formed on the anode electrode 151 ; and a cathode electrode 153 formed on the light emitting stack 152 .

[0071] The light-emitting stack 152 may include a hole injection layer, a hole transport layer, a light-emitting layer, an electron transport layer, and an electron injection layer. Additionally, the charge generation layer may be arranged between the light-emitting layers in a cascade structure in which a plurality of light-emitting layers overlap each other. The light-emitting layer may emit light of different colors for each sub-pixel. For example, a red light-emitting layer, a green light-emitting layer, and a blue light-emitting layer are formed for each sub-pixel, respectively. However, a common light-emitting layer may be formed to emit white light for each pixel without color classification, and a color filter for classifying the colors may be provided separately. Typically, in addition to forming a separate light-emitting layer, the light-emitting stack 152 may also be arranged as a common layer and arranged in the same manner for each sub-pixel.

[0072] The anode electrode 151 may be connected to the connection electrode 145 exposed by the contact hole penetrating the second planarization layer 111. The anode electrode 151 may be formed as a multilayer structure including a transparent conductive film and an opaque conductive film, the opaque conductive film having a high reflection efficiency. For example, the transparent conductive film is formed of a material having a relatively high work function value, such as indium tin oxide (ITO) or indium zinc oxide (IZO), and the opaque conductive film is formed to have a single layer structure or a multilayer structure including Al, Ag, Cu, Pb, Mo and Ti or their alloys. For example, the anode electrode 151 may be formed to have a structure in which a transparent conductive film, an opaque conductive film and a transparent conductive film are stacked in sequence, or may be formed to have a structure in which a transparent conductive film and an opaque conductive film are stacked in sequence. The anode electrode 151 may be disposed on the second planarization layer 111 so as to overlap not only the light emitting region provided by the bank 154, but also the pixel circuit region in which the first transistor 120 and the second transistor 130 and the storage capacitor 140 are disposed, thereby increasing the light emitting region.

[0073] The light emitting stack 152 may be formed by stacking a hole transport layer, an organic light emitting layer, and an electron transport layer in sequence or in reverse sequence on the anode electrode 151. In addition, the light emitting stack 152 may further include a charge generation layer, and a first light emitting stack and a second light emitting stack may be formed opposite to each other with the charge generation layer interposed therebetween.

[0074] The bank 154 may expose the anode 151. The bank 154 may be formed of an organic material such as photo acrylic, and may be formed of a semi-transparent material. However, the present disclosure is not limited thereto, and the bank 154 may be formed of an opaque material for suppressing optical interference between sub-pixels.

[0075] The cathode electrode 153 may be formed on the upper surface of the light emitting stack 152 so as to be opposite to the anode electrode 151, wherein the light emitting stack 152 is interposed between the cathode electrode 153 and the anode electrode 151. In the case where the cathode electrode 153 is applied to a front-side emission type organic light emitting display device, the cathode electrode 153 may be formed of a transparent conductive film by thinly forming indium tin oxide (ITO), indium zinc oxide (IZO), or magnesium silver (Mg-Ag).

[0076] The encapsulation layer 170 for protecting the light emitting device 150 may be formed on the cathode electrode 153. Due to the nature of the organic material in the light emitting stack 152, the light emitting device 150 may react with moisture or oxygen from the outside to cause dark spots or pixel shrinkage. In order to suppress the occurrence of dark spots or pixel shrinkage, the encapsulation layer 170 may be disposed on the cathode electrode 153. The encapsulation layer 170 may include a first inorganic insulating film 171, a foreign matter compensation layer 172, and a second inorganic insulating film 173.

[0077] Figure 4 is with Figure 1 The area of ​​the camera hole CH corresponds to the plan view of the enlarged area B. Figure 4 , there is a large circular space at the center of the B area, and the camera module can be set in the large circular space. The area of ​​the camera hole CH can be removed using a laser in the panel finishing step. Therefore, the substrate 101 can be removed except for a portion of the area of ​​the camera hole (CH). The non-display area NA can be set between the area of ​​the camera hole CH and the display area AA. The dam structure 300 and the disconnection structure 200 can be set around the area of ​​the camera hole CH in the non-display area NA. Figure 4, the dam structure 300 may include a first dam 301 and a second dam 302, and the disconnection structure 200 may include a first disconnection portion 201 and a second disconnection portion 202. The first dam 301, the first disconnection portion 201, the second dam 301, and the second disconnection portion 202 may be sequentially arranged around the area of ​​the camera hole CH. Generally, the dam structure is to suppress the foreign matter compensation layer 172 as a part of the encapsulation layer from flowing from the outside of the display panel 100 to the end of the outside of the display panel 100 to maintain the adhesion between the upper substrate and the lower substrate constituting the display panel 100. In order to protect the light emitting device 150, for example, in order to suppress the foreign matter compensation layer 172 of the encapsulation layer 170 from overflowing to the area of ​​the camera hole CH or leaking from the area of ​​the camera hole CH, the dam structure 300 at the periphery of the area of ​​the camera hole CH may be formed by a plurality of structures such as a first dam 301 and a second dam 302. The present disclosure proposes two dams, but is not limited thereto, and additional dams may be provided according to the spatial arrangement. Referring to Figure 4 , the first disconnected portion 201 and the second disconnected portion 202 may be respectively disposed within the first dam portion 301 and the second dam portion 302. The first disconnected portion 201 and the second disconnected portion 202 may be disposed to protect the light emitting device 150 in the display area from moisture or oxygen introduced into the area of ​​the camera hole CH. The light emitting stack 152 for the light emitting device 150 may be deposited on the front surface of the display panel 100, and may also be uniformly deposited on the area of ​​the camera hole CH. The light emitting stack 152 has high reactivity and high propagation to moisture and oxygen due to the nature of the organic material, and thus may transfer moisture and oxygen to the light emitting device 150 of the display area AA. In order to suppress the transfer of moisture and oxygen, the first disconnected portion 201 and the second disconnected portion 202 may be configured to partially disconnect the light emitting stack 152. Referring to Figures 6 to 8 The present disclosure describes two disconnection structures, but is not limited thereto.

[0078] In addition to the dam structure 300 and the disconnection structure 200, various wirings may be provided in the non-display area NA near the area of ​​the camera hole CH. Although the light emitting device 150 and the pixel circuit are removed from the corresponding area due to the provision of the area of ​​the camera hole CH, the light emitting device 150 and the pixel circuit still need to be electrically connected to the upper side, lower side, left side, and right side of the area of ​​the camera hole CH. To this end, the high potential power wiring PL, the gate wiring SL, etc. may be provided in the non-display area NA near the area of ​​the camera hole CH so as to bypass the area of ​​the camera hole CH and be connected to the upper side, lower side, left side, and right side.

[0079] Figure 5 yes Figure 4 A plan view of the enlarged C region outside the camera hole CH. Figure 5 , the first disconnected portion 201 may be disposed between the first dam portion 301 and the second dam portion 302, and the second disconnected portion 202 may be disposed on the right side of the second dam portion 302. The first disconnected portion 201 may include a first structure 211, a second structure 212, a third structure 213, and a fourth structure 214, and the second disconnected portion 202 may include a fifth structure 221, a sixth structure 222, a seventh structure 223, and an eighth structure 224. Figure 4 and Figure 5 , the first dam portion 301, the second dam portion 302, the first disconnection portion 201, and the second disconnection portion 202 are arranged in a closed loop shape around the area of ​​the camera hole CH. This is because if any part of the first dam portion 301, the second dam portion 302, the first disconnection portion 201, and the second disconnection portion 202 arranged in a closed loop shape penetrates, moisture and oxygen may penetrate into the display area AA from the outside, or conversely, the foreign matter compensation layer 172 may overflow from the inside to the area of ​​the camera hole CH. Referring to Figure 5 , each of the first disconnection portion 201 and the second disconnection portion 202 may be composed of four structures, but the present disclosure is not limited thereto. For example, each of the first disconnection portion 201 and the second disconnection portion 202 may be composed of five structures. In addition to the first disconnection portion 201 and the second disconnection portion 202, the disconnection portion may be further provided on the left side of the first dam portion 301 and may be further provided at a portion adjacent to the area of ​​the camera hole CH. In addition to the first dam portion 301 and the second dam portion 302, a dam portion may be provided in the non-display area NA on the right side of the second disconnection portion 202. The first to eighth structures 211, 212, 213, 214, 221, 222, 223 and 224 included in the disconnection portion may have a line width of approximately 3 μm to 10 μm, but the present disclosure is not limited thereto.

[0080] Figure 6 is shown along Figure 42 is a cross-sectional view of the structure of the camera hole area taken along the line II-IV in FIG. The first dam 301 and the second dam 302 may be arranged in a closed loop shape around the area of ​​the camera hole CH, and the first disconnection portion 201 may be arranged between the first dam 301 and the second dam 302 in a closed loop shape. When observing the cross section near the area of ​​the camera hole CH, various insulating films present in the substrate 101 and the display area AA may be provided. For example, the multi-buffer layer 102, the lower buffer layer 103, the first lower interlayer insulating film 105, the second lower interlayer insulating film 106, the upper buffer layer 107, the upper interlayer insulating film 108, etc. may be stacked on the substrate 101 in sequence. The area of ​​the camera hole CH may vary depending on the size of the camera applied to the product. The corresponding area is shown as a blank space, but some insulating films or wiring structures may be provided in the corresponding area. However, when the area of ​​the camera hole CH is removed by laser, the corresponding area is a dummy area that is not retained in the final product, so its separate description will be omitted. The laser can be irradiated in a circular shape or an elliptical shape according to the shape of the area of ​​the camera hole CH, and all areas on the substrate except the substrate 101 can be removed by laser irradiation. The actual area of ​​the camera hole CH and the laser irradiation area may be different from each other. For example, the laser irradiation area may be an area about 100 μm inward from the area of ​​the camera hole CH. In this way, since the laser irradiation area and the area of ​​the camera hole CH are different from each other, the insulating layer in the area of ​​the camera hole CH may not be damaged during laser irradiation. A picosecond laser or a femtosecond laser can be used as a laser, but the present disclosure is not limited thereto. Since a laser that amplifies stimulated light generated by applying energy to a specific material has characteristics like radio waves and directionality relative to monochromatic light, lasers are used for communication, medical and industrial purposes. Using a laser, a pattern can be formed at a desired portion, and a specific portion can be easily removed. The picosecond laser and femtosecond laser described above can be divided based on the irradiation time of the laser. Picoseconds and femtoseconds are time units. A picosecond is one trillionth of a second (10 -12 seconds), and a femtosecond is one quadrillionth of a second (10 -15Seconds), picoseconds and femtoseconds are too short to be recognized by humans. The reason for dividing lasers in time units is because the time of pulse irradiation of picosecond lasers is one trillionth of a second, while the time of pulse irradiation of femtosecond lasers is one quadrillionth of a second. Lasers use energy to form or remove patterns, and when the energy of the laser is irradiated onto an object, the heat energy melts the object to form a pattern. As the time of pulse irradiation becomes longer, a thermal effect may occur in which energy is transferred to the vicinity of the portion where the pattern is formed. The thermal effect may cause heat to accumulate around the laser irradiation area of ​​the object, thereby burning or deforming it to a surrounding area larger than the set pattern. When the area irradiated by the laser overlaps or is adjacent to the insulating film, the insulating film may also be deformed due to the thermal energy of the laser due to the characteristics of the laser. Cracks may occur due to the deformation of the insulating film, and the cracks propagate through the insulating film, so that separation of the insulating film may occur, thereby causing the penetration of moisture and oxygen. For example, in order to suppress deformation or separation of insulating films such as the multi-buffer layer 102, the lower buffer layer 103, the first lower interlayer insulating film 105, the second lower interlayer insulating film 106, the upper buffer layer 107, and the upper interlayer insulating film 108, all insulating films may be removed at a distance of about 100 μm from the laser irradiation position. Figure 6 , the entire width of the first dam portion 301 or the second dam portion 302 may be approximately 50 μm, and may have a hat-shaped structure having a gentle slope on the left and right surfaces and a steep slope starting from the central area. For example, the width of the dam portion may be approximately 30 μm to 60 μm, but the present disclosure is not limited thereto. In this case, the width of the central area having a steep slope may be approximately 25 μm, but the present disclosure is not limited thereto. The first dam portion 301 or the second dam portion 302 may be formed by stacking the second planarization layer 111, the embankment 154, and the spacer 155, but the present disclosure is not limited thereto, and the first dam portion 301 or the second dam portion 302 may be configured to also include the first planarization layer 110 or other layers. The first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224 forming the first disconnection portion 201 and the second disconnection portion 202 may be formed of a metal material, and may be formed of the same material as the source electrode and the drain electrode of the transistor or may be provided in the same process, for example. Specifically, each structure may have a triple metal layer structure in which titanium (Ti), aluminum (Al), and titanium (Ti) are stacked in sequence, but the present disclosure is not limited thereto.

[0081] As in the display area AA, the encapsulation layer 170 may be provided in the area where the first dam 301 or the second dam 302 and the first disconnection portion 201 are provided, and the encapsulation layer 170 may include a first inorganic insulating film 171, a foreign matter compensation layer 172, and a second inorganic insulating film 173. However, the foreign matter compensation layer 172 may be provided in a portion of the area near the second dam 302, and may not be provided in the area of ​​the first dam 301. This will be referred to in detail later. Figure 7 and Figure 8 Describe in detail.

[0082] Figure 7 is along Figure 4 A cross-sectional view taken along line III-V in FIG. Figure 7 Can be Figure 6 Another exemplary embodiment of . Figure 6 and Figure 7The difference between the first and second dam portions 301 and 302 may exist in the structure adjacent to the first dam portion 301 and the second dam portion 302. For example, in the case of the first structure 211, the fourth structure 214, the fifth structure 221, and the eighth structure 224, the same triple metal layer structure may also be provided on the triple metal layer structure that is the same as other structures. Therefore, the height of the first structure 211, the fourth structure 214, the fifth structure 221, and the eighth structure 224 may be twice the height of the other structures. The reason for providing the first disconnection portion 201 or the second disconnection portion 202 is because the light emitting stack 152, which is usually provided in the display area AA and the non-display area NA, is separated from the structure of the disconnection portion. The light emitting stack 152 may be deposited on the front surface of the display panel 100, and the side surface of the light emitting stack 152 may be exposed to the area of ​​the camera hole CH. When moisture or oxygen from the outside penetrates and diffuses through the side surface portion of the light emitting stack 152, the moisture and oxygen may propagate to the light emitting device 150 of the display area AA, thereby causing performance degradation and defects of the light emitting device 150. The structure of the first disconnection portion 201 or the second disconnection portion 202 may be provided so as to disconnect the transfer path of moisture and oxygen through the light emitting stack 152, and the light emitting stack 152 may be physically disconnected based on the shapes of the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224 and the principle of providing the light emitting stack 152. The first structure 211, the fourth structure 214, the fifth structure 221, and the eighth structure 224 may be formed as a double structure. Therefore, the structural separation of the light emitting stack 152 may be ensured by the height difference generated when the double structure is formed as described above. Specifically, the first structure 211 may be formed to be high at the outermost side of the area closest to the camera hole CH to ensure that moisture and oxygen are suppressed from penetrating from the outside, and the fourth structure 214 and the fifth structure 221 may be provided around the second dam 302 spaced apart from the first dam 301 to suppress the foreign matter compensation layer 172 of the encapsulation layer 170 from overflowing the second dam 302. In the process of setting the foreign matter compensation layer 172, the foreign matter compensation layer 172 having a liquid phase material may be set by applying the foreign matter compensation layer 172 to the front surface of the display panel 100. In this case, the irregularities caused by the arrangement of the second dam portion 302 and the plurality of structures may be an obstruction caused by the expansion of the foreign matter compensation layer 172, and may actually be used to suppress overflow. In addition, the eighth structure 224, which is the structure farthest from the area of ​​the camera hole CH, may be used as a last line of defense to suppress the penetration of moisture or oxygen into the display area AA. However, the position of the dual structure is not necessarily limited to the positions of the first structure 211, the fourth structure 214, the fifth structure 221, and the eighth structure 224, and the dual structure may be set on the second structure 212 or the sixth structure 222. For example, the eighth structure 224 may be a structure in which the first disconnection layer 224a to the sixth disconnection layer 224f are stacked in sequence. Here, as Figure 3 As shown, the first disconnect layer 224a may correspond to the first layer 121a of the first source electrode 121. The second disconnect layer 224b may correspond to the second layer 121b of the first source electrode 121. The third disconnect layer 224c may correspond to the third layer 121c of the first source electrode 121. The first disconnect layer 224a of the eighth structure 224 may include the same material as the third disconnect layer 224c, and the second disconnect layer 224b of the eighth structure 224 may include a material different from the first disconnect layer 224a and the third disconnect layer 224c of the eighth structure 224. For example, the first disconnect layer 224a and the third disconnect layer 224c of the eighth structure 224 may include titanium (Ti), and the second disconnect layer 224b of the eighth structure may include aluminum (Al).

[0083] The width of the second disconnection layer 224b of the eighth structure 224 may be smaller than the widths of the first disconnection layer 224a and the third disconnection layer 224c. Therefore, the side surface of the eighth structure 224 may have a concave shape. The concave portion of the eighth structure 224 may refer to a groove formed by removing a portion of the second disconnection layer 224b to be recessed toward the inside of the end portion of the first disconnection layer 224a and the third disconnection layer 224c. Specifically, when the eighth structure 224 is stacked, there is no difference in the end portion between the layers. However, in the formation process of the first dam 301 and the second dam 302, a portion of the second disconnection layer 224b may be removed together with the organic insulating film near the area of ​​the camera hole CH. In addition, the material for forming the anode 151 may be formed on the front surface of the substrate 101, and a portion of the second disconnection layer 224b may be removed together with the material for forming the anode 151 during the patterning of the anode 151 to correspond to each light emitting device 150. That is, a portion of the second disconnect layer 224b including aluminum (Al) may be removed together during etching of the first dam 301, the second dam 302, and the material for forming the anode 151, and the first disconnect layer 224a and the third disconnect layer 224c including titanium (Ti) may not be removed or may be removed less than the second disconnect layer 224b. A portion of the upper surface of the first disconnect layer 224a and a portion of the lower surface of the third disconnect layer 224c may be exposed from the end portion of the eighth structure 224 through the recess.

[0084] Unlike the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224, since the first source electrode 121 and the first drain electrode 124 are covered by the protective film 109 or the first planarization layer 110 immediately after patterning, the first source electrode 121 and the first drain electrode 124 do not have a concave structure of the side end portion, such as the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224. Therefore, the side surfaces of the first layer 121a, the second layer 121b, and the third layer 121c of the first source electrode 121 can be arranged on the same line. On the contrary, the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224 can be exposed near the first dam portion 301 and the second dam portion 302 immediately before the light emitting stack 152 is formed.

[0085] When the light emitting stack 152 is disposed in the region where the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224 are disposed, a phenomenon in which the light emitting stack 152 is partially cut off at the left and right end portions of the structure may occur. Based on the phenomenon in which the light emitting stack 152 is disconnected at the end portion of the structure, as shown in FIG. Figure 3 As shown in the description of , the light emitting stack 152 may be configured to be formed as a common layer for dividing the light emitting stack 152 for each sub-pixel without a separate mask for deposition. For example, in the first to eighth structures 211, 212, 213, 214, 221, 222, 223, and 224, due to the step difference in the side end portions of the second disconnection layer 224b and the third disconnection layer 224c, the eighth structure 224 may be structurally separated from the light emitting stack 152. The light emitting stack 152 may be formed on the substrate 101 by supplying an evaporated organic material from a supply source. The evaporated organic material having straightness is deposited to cover the upper surface or side surface of the third disconnection layer 224c of the eighth structure 224, but is not formed on the side surface of the second disconnection layer 224b.

[0086] Figure 8 yes Figure 7 A cross-sectional view of the enlarged D region. Figure 8 The third disconnected structure 213, the fourth disconnected structure 214, the light emitting stack 152 and the cathode electrode 153 near the second dam portion 302 are shown. Figure 8, a fourth disconnection structure 214 may be provided, and a portion of the foreign matter compensation layer 172 may partially exist between the fourth disconnection structure 214 and the second dam portion 302. The first dam portion 301 and the second dam portion 302 suppress poor adhesion to the upper substrate caused by the foreign matter compensation layer 172, which is a part of the encapsulation layer 170, flowing down to the outer portion of the display panel 100 in the same manner as the dam portions in the non-display area NA provided on the four outer portions of the display panel 100. Overflow of the foreign matter compensation layer 172 into the area of ​​the camera hole CH may cause contamination of the setting space of the camera or interference with the camera, thereby causing serious quality problems. In order to suppress serious quality problems, the following design may be reflected: in this design, the second dam portion 302 suppresses the overflow of the foreign matter compensation layer 172 as much as possible, while the first dam portion 301 enables the foreign matter compensation layer 172 not to overflow.

[0087] Reference Figure 8 , a portion of the foreign matter compensation layer 172 overflows into the second dam portion 302 and does not overflow into the fourth structure 214 , which can be seen from the shape of the foreign matter compensation layer 172 flowing downward along the second dam portion 302 .

[0088] The light emitting stack 152 and the cathode electrode 153 may be formed on the upper surface of the third disconnection layer 213c of the third structure 213 and the upper surface of the sixth disconnection layer 214f ​​of the fourth structure 214, and the light emitting stack 152 and the cathode electrode 153 may be partially separated from the side end portions of the third structure 213 and the fourth structure 214. The light emitting stack 152 and the cathode electrode 153 may be partially formed on the upper surface and the side surface of the first disconnection layer 213a of the third structure 213 and the upper surface and the side surface of the first disconnection layer 214a of the fourth structure 214. By covering the separated region of the light emitting stack 152 with the first inorganic insulating film 171 and the second inorganic insulating film 173 of the encapsulation layer 170 like this, the permeation path of moisture and oxygen propagating from the region of the camera hole CH through the light emitting stack 152 may be blocked.

[0089] Fig.9A and Fig. 9B Shown along Figure 5 The cross section taken along line III-IV in Figure 6 An exemplary embodiment or Figure 7 and Figure 8 Reference is made to the exemplary embodiments of the present invention. Fig.9A, the first roof structure 231 may also be provided on the upper portion of each structure forming the first disconnected portion 201. As shown based on the fourth structure 214, the first roof structure 231 may be a trapezoidal or semicircular thick organic film on the upper surface of the third disconnected layer 214c of the fourth structure 214. The first roof structure 231 is composed of a lower surface in contact with the third disconnected layer 214c of the fourth structure 214 and an upper surface in the direction of the encapsulation layer 170. In order to have a trapezoidal or semicircular shape, the length or area of ​​the lower surface may be greater than the length or area of ​​the upper surface. The length or area of ​​the lower surface of the first roof structure 231 may be greater than the length or area of ​​the upper surface of the third disconnected layer 214c of the fourth structure 214. As a result, the lower surface of the first roof structure 231 may be more exposed to the side than the upper surface of the third disconnected layer 214c of the fourth structure 214. When the first roof structure 231 is disposed on the fourth structure 214 and the light emitting stack 152 and the cathode electrode 153 are sequentially disposed, the light emitting stack 152 and the cathode electrode 153 may be stacked on the upper surface and the side of the first roof structure 231. On the contrary, since the lower surface of the first roof structure 231 is not exposed in the deposition direction, the light emitting stack 152 may be separated from the side of the first roof structure 231 to the first disconnection layer 214a of the fourth structure 214.

[0090] Reference Fig. 9B ,and Fig.9A Different, the second roof structure 241 can also be arranged on each structure forming the first disconnection portion 201. As shown based on the fourth structure 214, the second roof structure 241 can be a thick organic film in a trapezoidal shape on the upper surface of the third disconnection layer 214c of the fourth structure 214. In this case, the second top structure 241 can have the following characteristics: it can have an inverted cone structure, wherein the length or area of ​​the upper surface of the structure is greater than the length or area of ​​the lower surface. Therefore, when the light-emitting stack 152 and the cathode electrode 153 are stacked, the light-emitting stack 152 and the cathode electrode 153 can be arranged on the upper surface of the second roof structure 241, on a portion of the upper surface of the third disconnection layer 214c of the fourth structure, and on a portion of the upper surface and side surface of the first disconnection layer 214a. Due to the step difference, the light-emitting stack 152 and the cathode electrode 153 can be separated from the fourth structure 214.

[0091] The display device according to the present disclosure includes a liquid crystal display (LCD) device, a field emission display (FED) device, an organic light emitting diode (OLED) display device, and a quantum dot display device.

[0092] The display device according to an exemplary embodiment of the present disclosure may also include an equipment display device including a complete product or final product having an LCM, an OLED module, etc., for example, a notebook computer, a television, a computer monitor, an automobile display device, or other display devices of a vehicle, as well as a kit electronic device or a kit device (kit device) such as a mobile electronic device (such as a smart phone or an electronic pad).

[0093] Exemplary embodiments of the present disclosure may also be described as follows:

[0094] According to aspects of the present disclosure, a display device includes: a substrate including a display area and at least one non-display area; a light-emitting device and a plurality of transistors, wherein the light-emitting device and the plurality of transistors are arranged in the display area of ​​the substrate; and a power wiring, which is arranged in at least one non-display area and is electrically connected to the plurality of transistors and the light-emitting device, wherein the at least one non-display area includes a camera hole area and a disconnected area, and the disconnected area has a closed loop shape to surround the camera hole area.

[0095] The display device may further include at least one dam and at least one disconnection structure provided in the disconnection region.

[0096] The at least one non-display area further includes a wiring area through which a power wiring passes, the wiring area being adjacent to the camera hole area and the disconnection area.

[0097] At least one disconnect structure may be provided simultaneously from the same material as the source electrode and the drain electrode of the transistor.

[0098] The source electrode, the drain electrode, and the disconnect structure may be provided by stacking a combination of at least two materials among titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag), and indium tin oxide (ITO).

[0099] The camera hole area may include a space from which at least a portion of the substrate is removed.

[0100] The dam portions and the disconnecting structures may be arranged alternately.

[0101] The dam may have a width of 30 μm to 60 μm, and the disconnection structure may have a width of 3 μm to 10 μm.

[0102] The disconnection structure may be provided as a three-layer structure in which a first layer, a second layer, and a third layer are stacked, and a side of the second layer may be provided inwardly with respect to sides of the first layer and the third layer.

[0103] The disconnected structure can also be set to a six-layer structure by including another three-layer structure, in which the fourth layer, the fifth layer and the sixth layer are stacked on the three-layer structure, and the width of the second layer and the fifth layer can be smaller than the width of the other layers in the six-layer structure.

[0104] According to another aspect of the present disclosure, a display device includes: a substrate including a light-emitting device and a plurality of transistors; a camera hole disposed near the light-emitting device and the plurality of transistors; and at least one disconnected portion and at least one dam portion, wherein the at least one disconnected portion and the at least one dam portion are disposed to surround the camera hole, wherein the at least one disconnected portion includes at least one disconnected structure, and the at least one dam portion and the at least one disconnected portion are alternately disposed with each other.

[0105] The display device may further include a wiring region disposed to surround the disconnection portion.

[0106] The disconnected portion may be formed of at least three disconnected structures, and the at least three disconnected structures may have a closed loop shape surrounding the camera hole.

[0107] The camera aperture may be configured to remove at least a portion of the substrate.

[0108] The disconnect structure may be formed of the same material as the source and drain electrodes of the plurality of transistors.

[0109] The disconnected structure may be provided in a three-layer structure, and a side portion of a middle layer of the three-layer structure may be provided inwardly with respect to sides portions of upper and lower layers of the three-layer structure.

[0110] The disconnection structure may be provided in an at least three-layer structure, and at least one layer of the at least three-layer structure may be formed of an organic material.

[0111] A layer formed of an organic material may be disposed on an uppermost layer of the disconnected structure.

[0112] For example, the present disclosure may also include the following technical solutions:

[0113] Technical Solution 1. A display device, comprising:

[0114] a substrate comprising a display area and at least one non-display area;

[0115] A light emitting device and a plurality of transistors disposed in the display region of the substrate; and

[0116] a power wiring provided in the at least one non-display area and electrically connected to the plurality of transistors and the light emitting device,

[0117] wherein the at least one non-display area includes a camera hole area and a disconnection area, and

[0118] The cut-off area has a closed loop shape to surround the camera hole area.

[0119] Technical Solution 2. The display device according to Technical Solution 1 further includes at least one dam portion and at least one disconnection structure arranged in the disconnection area.

[0120] Technical Solution 3. A display device according to Technical Solution 1, wherein the at least one non-display area further includes a wiring area adjacent to the camera hole area and the disconnection area, and the power wiring passes through the wiring area.

[0121] Technical Solution 4. A display device according to Technical Solution 2, wherein the at least one disconnection structure is simultaneously set by the same material as the source electrodes and the drain electrodes of the multiple transistors.

[0122] Technical Solution 5. A display device according to Technical Solution 4, wherein the source electrode, the drain electrode and the disconnection structure are set by stacking a combination of at least two materials among titanium (Ti), molybdenum (Mo), aluminum (Al), silver (Ag) and indium tin oxide (ITO).

[0123] Technical Solution 6. A display device according to Technical Solution 1, wherein the camera hole area includes a space from which at least a portion of the substrate is removed.

[0124] Technical Solution 7. The display device according to Technical Solution 2, wherein the dam portions and the disconnecting structures are alternately arranged.

[0125] Technical solution 8. The display device according to technical solution 7, wherein the dam portion has a width of 30 μm to 60 μm, and

[0126] The disconnected structures have a width of 3 μm to 10 μm.

[0127] Technical Solution 9. The display device according to Technical Solution 2, wherein the disconnected structure is configured as a three-layer structure in which a first layer, a second layer and a third layer are stacked, and

[0128] The side of the second layer is disposed inwardly relative to the sides of the first layer and the third layer.

[0129] Technical Solution 10. The display device according to Technical Solution 9, wherein the disconnected structure is configured as a six-layer structure by further comprising another three-layer structure including a fourth layer, a fifth layer, and a sixth layer stacked on the three-layer structure, and

[0130] The second layer and the fifth layer have smaller widths than other layers in the six-layer structure.

[0131] Technical Solution 11. A display device according to Technical Solution 9, wherein the disconnected structure has a roof structure arranged on the three-layer structure.

[0132] Technical solution 12. A display device, comprising:

[0133] a substrate including a light emitting device and a plurality of transistors;

[0134] a camera aperture disposed adjacent to the light emitting device and the plurality of transistors; and

[0135] at least one disconnected portion and at least one dam portion arranged to surround the camera hole,

[0136] wherein the at least one disconnected portion comprises at least one disconnected structure, and

[0137] The at least one dam portion and the at least one disconnected portion are disposed alternately with each other.

[0138] Technical Solution 13. The display device according to Technical Solution 12 further includes a wiring area arranged to surround the disconnected portion.

[0139] Technical Solution 14. The display device according to Technical Solution 12, wherein the disconnected portion is formed by at least three disconnected structures, and

[0140] Wherein, the at least three disconnected structures have a closed loop shape surrounding the camera hole.

[0141] Technical Solution 15. A display device according to Technical Solution 12, wherein the camera hole is configured to remove at least a portion of the substrate.

[0142] Technical Solution 16. A display device according to Technical Solution 14, wherein the disconnection structure is formed of the same material as the source electrodes and the drain electrodes of the multiple transistors.

[0143] Technical Solution 17. The display device according to Technical Solution 16, wherein the disconnected structure is configured as a three-layer structure, and

[0144] The side of the middle layer of the three-layer structure is disposed inwardly relative to the side of the upper and lower layers of the three-layer structure.

[0145] Technical Solution 18. The display device according to Technical Solution 16, wherein the disconnected structure is configured as at least a three-layer structure, and

[0146] At least one layer of the at least three-layer structure is formed of an organic material.

[0147] Technical Solution 19. The display device according to Technical Solution 18, wherein the layer formed of the organic material is disposed on the uppermost layer of the disconnected structure.

[0148] Technical Solution 20. A display device according to Technical Solution 17, wherein the disconnected structure has a roof structure arranged on the three-layer structure.

[0149] Technical Solution 21. A display device, comprising:

[0150] a substrate including a light emitting device and a plurality of transistors;

[0151] a camera aperture disposed adjacent to the light emitting device and the plurality of transistors; and

[0152] at least one disconnected portion and at least one dam portion arranged to surround the camera hole,

[0153] wherein the at least one disconnected portion comprises at least one disconnected structure, and

[0154] The at least one disconnecting structure physically disconnects the light emitting layer of the light emitting device.

[0155] Although the exemplary embodiments of the present disclosure have been described in detail with reference to the accompanying drawings, the present disclosure is not limited thereto and can be implemented in many different forms without departing from the technical concepts of the present disclosure. Therefore, the exemplary embodiments of the present disclosure are provided for illustrative purposes only and are not intended to limit the technical concepts of the present disclosure. The scope of the technical concepts of the present disclosure is not limited thereto. Therefore, it should be understood that the above exemplary embodiments are illustrative in all aspects and do not limit the present disclosure. The scope of protection of the present disclosure should be interpreted based on the attached claims, and all technical concepts within their equivalent scope should be interpreted as falling within the scope of the present disclosure.

Claims

1. A display device, comprising: a substrate including a display area on which a plurality of pixels are arranged, a camera hole in the display area, and a first non-display area between the display area and the camera hole, Wherein, the first non-display area includes a disconnected area provided with at least one dam structure, Each of the plurality of pixels includes a first transistor and a second transistor on a gate electrode of the first transistor, and a plurality of buffer layers below the first transistor and the second transistor. Wherein, the plurality of buffer layers extend to the first non-display area, and The first non-display area includes a high-potential power line and a gate line between the at least one dam structure and the display area.

2. The display device according to claim 1, wherein: The first transistor includes a first source electrode and a first drain electrode, and the second transistor includes a second source electrode and a second drain electrode, The first source electrode, the first drain electrode, the second source electrode and the second drain electrode are arranged in the same layer.

3. The display device according to claim 2, wherein: The first source electrode, the first drain electrode, the second source electrode and the second drain electrode include a stacked combination of at least two materials selected from titanium Ti, molybdenum Mo, aluminum Al, silver Ag and indium tin oxide ITO.

4. The display device according to claim 3, wherein: The first source electrode, the first drain electrode, the second source electrode, and the second drain electrode include a three-layer metal structure.

5. The display device according to claim 1, further comprising: At least one dam and at least one disconnection structure are disposed in the disconnection region.

6. The display device according to claim 5, wherein: The at least one dam portion and the at least one break structure are alternately disposed.

7. The display device according to claim 1, further comprising: Anodes on the first transistor and the second transistor overlap with at least a portion of the first transistor and at least a portion of the second transistor.

8. The display device according to claim 7, further comprising: A bank on at least a portion of the anode and a spacer on at least a portion of the bank.

9. The display device according to claim 8, further comprising: A connecting electrode connects the anode and the first transistor.

10. The display device according to claim 8, wherein: The spacers have a constant density in the display area.

11. The display device according to claim 8, wherein: The at least one dam structure is on the same layer as the bank or the spacer.

12. The display device according to claim 8, further comprising: At least one insulating layer between the gate electrode of the first transistor and the second semiconductor layer of the second transistor.

13. The display device according to claim 12, wherein: The at least one insulating layer is in the first non-display area and the disconnection area.

14. The display device according to claim 1, wherein: A first semiconductor of the first transistor includes a polycrystalline semiconductor layer, and a second semiconductor of the second transistor includes an oxide semiconductor layer.

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