Display device and electronic apparatus

Abstract

Provided is a display device having a built-in touch sensor and a driver for driving the touch sensor. The display device has a touch panel function, and an electrode of a touch sensor is electrically connected to a first driving circuit formed on a substrate on which a pixel circuit is formed in a monolithic manner. The first driving circuit may use a transistor including a metal oxide in a semiconductor layer. In addition, a transistor included in the first drive circuit has a structure which is easy to miniaturize and can perform high-speed operation. As a result, it is possible to reduce the area occupied by the circuit and contribute to narrowing the bezel.

Description

Technical Field

[0001] One embodiment of the present invention relates to a display device.

[0002] Note that one embodiment of the present invention is not limited to the above-mentioned technical field. As an example of the technical field of one embodiment of the present invention, a semiconductor device, a display device, a light-emitting device, a power storage device, a storage device, a lighting device, an input device (such as a touch sensor, etc.), an input-output device (such as an antenna, a touch panel, etc.), and a driving method, a use method, or a manufacturing method of the above-mentioned device can be cited.

[0003] Note that in this specification and the like, a semiconductor device refers to any device that can operate by utilizing semiconductor characteristics. A transistor and a semiconductor circuit are one form of a semiconductor device. In addition, a storage device, a display device, a camera, and an electronic device may include a semiconductor device. Background Art

[0004] In recent years, display devices have been used for various purposes. For example, as a large display device, there are home television devices, digital signage (Digital Signage) and public information displays (PID: Public Information Display). In addition, display devices are also widely used in smart phones and tablet terminals.

[0005] As a display device, a light-emitting device including a light-emitting device (also referred to as a light-emitting element) has been developed. A light-emitting device (also referred to as an EL device or an EL element) utilizing the electroluminescence (hereinafter referred to as EL) phenomenon has the characteristics of being easy to achieve thinness and lightness, being able to respond to input signals at high speed, and being able to be driven using a DC constant voltage power supply or the like. Patent document 1 discloses an example of a display device using an organic EL element. [Prior technical literature] [Patent Document]

[0006] [Patent Document 1] Japanese Patent Application Publication No. 2002-324673 Summary of the invention Technical problem to be solved by the invention

[0007] An active matrix display device includes a gate driver that selects pixels to which data is written and a source driver that supplies data to the selected pixels. In addition, in order for the display device to function as a touch panel, a touch sensor and a driver that drives the touch sensor are required.

[0008] The driver may use an IC chip having various functions, which is mounted on a frame of a substrate having a pixel circuit formed thereon, using a technology such as COG (Chip On Glass), COF (Chip On Film), or TCP (Tape Carrier Package).

[0009] As the display device becomes larger or higher definition, the manufacturing cost of the display device increases when the number of IC chips installed increases. This also hinders the narrowing of the frame. In view of the above problems, it is preferred to form the driver on the same substrate as the pixel circuit in a monolithic manner.

[0010] Therefore, one of the purposes of one embodiment of the present invention is to provide a display device including a touch sensor. In addition, one of the purposes of one embodiment of the present invention is to provide a display device having a built-in touch sensor and a driver for driving the touch sensor. In addition, one of the purposes of one embodiment of the present invention is to provide a display device having a built-in gate driver, a source driver, and a driver for a touch sensor. In addition, one of the purposes of one embodiment of the present invention is to provide a display device having a novel structure, etc. In addition, one of the purposes of one embodiment of the present invention is to provide a novel semiconductor device, etc.

[0011] Note that the recording of these purposes does not prevent the existence of other purposes. One mode of the present invention does not need to achieve all of the above purposes. Purposes other than the above purposes are obvious from the description of the specification, drawings, claims, etc., and can be extracted from the description of the specification, drawings, claims, etc. Solutions to technical problems

[0012] One embodiment of the present invention relates to a display device including a touch sensor.

[0013] One embodiment of the present invention is a display device, which includes a pixel circuit, a light-emitting device, a sensor electrode and a first driving circuit, the first driving circuit having a function of supplying a signal potential to the sensor electrode, the pixel circuit and the first driving circuit being arranged on the same substrate, the pixel circuit being arranged in a display unit, the pixel circuit including a first transistor, the first driving circuit including a second transistor, the light-emitting device including a first electrode, a light-emitting layer and a second electrode, the light-emitting layer being arranged between the first electrode and the second electrode, the first electrode being electrically connected to one of a source and a drain of the first transistor, the second electrode being electrically connected to a power line in an area outside the display unit, a first insulating layer being arranged on the second electrode, an opening being arranged in the first insulating layer in an area outside a connection portion between the second electrode and the power line, a sensor electrode being arranged on the first insulating layer, the sensor electrode being electrically connected to a source or a drain of the second transistor through the opening, and the second transistor being a transistor having a channel formation area along a side surface of a second insulating layer arranged on the substrate.

[0014] The sensor electrode may be electrically connected to the source or drain of the second transistor through the connection electrode.

[0015] The connecting electrode may use a conductive layer formed in the same process as the first electrode.

[0016] The first transistor may be a transistor having a channel formation region along the side surface of the second insulating layer.

[0017] As the second transistor, it is preferable to use a transistor including a metal oxide in a channel formation region.

[0018] In addition, one embodiment of the present invention may also include a second driving circuit, the pixel circuit may also include a third transistor, the second driving circuit may also be used as a gate driver, the second driving circuit may also include a fourth transistor, one of the source and the drain of the fourth transistor may also be electrically connected to the gate of the third transistor, and the fourth transistor may also be a transistor having a channel formation region along the side of the second insulating layer.

[0019] As the fourth transistor, it is preferable to use a transistor including a metal oxide in a channel formation region.

[0020] In addition, one embodiment of the present invention may also include a third driving circuit, the pixel circuit may also include a fifth transistor, the third driving circuit may also be used as a source driver, the third driving circuit may also include a sixth transistor, one of the source and the drain of the sixth transistor may also be electrically connected to one of the source and the drain of the fifth transistor, and the sixth transistor may also be a transistor having a channel formation region along the side of the second insulating layer.

[0021] As the sixth transistor, it is preferable to use a transistor including a metal oxide in a channel formation region.

[0022] In addition, a camera may be provided on the side opposite to the side of the substrate on which the pixel circuit is provided, and in the display portion, a first region overlapping with the camera lens may have a larger pixel pitch than a second region not overlapping with the camera lens.

[0023] In the first region and the second region, the sensor electrode may be provided using a metal layer in such a manner as to have a region overlapping with a wiring electrically connected to the pixel circuit.

[0024] In addition, in the first region, a sensor electrode may be set using a translucent conductive film, and in the second region, a sensor electrode may be set using a metal layer in a manner having an area overlapping with a wiring electrically connected to a pixel circuit, and the translucent conductive film may be electrically connected to the metal layer extending to the second region.

[0025] Furthermore, in the second region, the sensor electrode may be provided using a metal layer so as to have a region overlapping with a wiring electrically connected to the pixel circuit, and the sensor electrode may not be provided in the first region. Effects of the Invention

[0026] According to one embodiment of the present invention, a display device including a touch sensor can be provided. In addition, according to one embodiment of the present invention, a display device having a built-in touch sensor and a driver for driving the touch sensor can be provided. In addition, according to one embodiment of the present invention, a display device having a built-in gate driver, a source driver, and a driver for a touch sensor can be provided. In addition, according to one embodiment of the present invention, a display device having a novel structure can be provided. In addition, according to one embodiment of the present invention, a novel semiconductor device can be provided.

[0027] The description of multiple effects does not prevent the existence of each other's effects. In addition, one mode of the present invention does not need to have all the above effects. In one mode of the present invention, the purposes, effects and novel features other than the above can be naturally known from the description and drawings in this specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 It is a diagram for explaining a display device. Figure 2 is a block diagram illustrating a display device. FIG. 3A to FIG. 3C A diagram illustrating a touch sensor. FIG. 4A to FIG. 4F This is a diagram illustrating pixel layout. FIG. 5A to FIG. 5C A diagram illustrating a pixel circuit. FIG. 6A to FIG. 6E A diagram illustrating a configuration example of a display device. 7A to 7D A diagram illustrating a configuration example of a display device. Fig. 8A and Figure 8B It is a diagram illustrating a vertical transistor. Fig.9A and Fig. 9B It is a diagram illustrating a vertical transistor. Fig. 10A A diagram illustrating a configuration example of a display device. Fig. 10B and Fig. 10C A diagram illustrating a transistor. Fig.11 is a diagram showing a structural example of a display device. FIG. 12A to FIG. 12C is a diagram showing a structural example of a display device. Fig.13A and Fig. 13B It is a diagram for explaining sensor electrodes. Fig.14A and Fig. 14B It is a diagram for explaining sensor electrodes. Fig.15A and Fig. 15B It is a diagram for explaining sensor electrodes. Fig.16A and Fig. 16B It is a diagram for explaining sensor electrodes. Fig.17A and Fig. 17B A diagram illustrating the connection between sensor electrodes and a drive circuit. 18A to 18C It is a diagram for explaining sensor electrodes. FIG. 19A to FIG. 19F It is a diagram for explaining a configuration example of an electronic device. FIG. 20A to FIG. 20C It is a diagram for explaining a configuration example of an electronic device. FIG. 21A to FIG. 21C It is a diagram for explaining a configuration example of an electronic device. Modes for Carrying Out the Invention

[0029] The following describes the embodiments with reference to the accompanying drawings. However, a person skilled in the art can easily understand that the embodiments can be implemented in a plurality of different forms, and the methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments shown below.

[0030] In addition, in this specification, when it is stated that "X is connected to Y", it means that the following cases are disclosed in this specification, etc.: a case where X is electrically connected to Y; a case where X is functionally connected to Y; and a case where X is directly connected to Y. Therefore, the connection relationships specified are not limited to the connection relationships shown in the drawings or the text, and connection relationships other than the connection relationships shown in the drawings or the text are also disclosed in the drawings or the text. X and Y are both objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0031] As an example of a case where X and Y are electrically connected, one or more elements (such as switches, transistors, capacitors, inductors, resistors, diodes, display devices, light-emitting devices, loads, etc.) that can electrically connect X and Y may be connected between X and Y. In addition, the on state and the off state of the switch are controlled. In other words, the switch has a function of controlling whether to allow current to flow by making it a conductive state (on state) or a non-conductive state (off state).

[0032] As an example of a case where X and Y are functionally connected, for example, one or more circuits capable of functionally connecting X and Y (for example, logic circuits (inverters, NAND circuits, NOR circuits, etc.), signal conversion circuits (digital-to-analog conversion circuits, analog-to-digital conversion circuits, gamma correction circuits, etc.), potential level conversion circuits (power supply circuits (boosting circuits, step-down circuits, etc.), level shifting circuits that change the potential level of a signal, etc.), voltage sources, current sources, switching circuits, amplifier circuits (circuits capable of increasing signal amplitude or current, operational amplifiers, differential amplifier circuits, source follower circuits, buffer circuits, etc.), signal generating circuits, storage circuits, control circuits, etc.) may be connected between X and Y. Note that, for example, even if another circuit is interposed between X and Y, when a signal output from X is transmitted to Y, X and Y can be said to be functionally connected.

[0033] Furthermore, when it is clearly stated that “X is electrically connected to Y”, the following cases are included: a case where X is electrically connected to Y (in other words, a case where X and Y are connected with another element or another circuit interposed therebetween); and a case where X and Y are directly connected (in other words, a case where X and Y are connected without another element or another circuit interposed therebetween).

[0034] In addition, for example, it can be expressed as "X, Y, the source (or first terminal, etc.) of the transistor and the drain (or second terminal, etc.) of the transistor are electrically connected to each other, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor and Y are electrically connected in sequence." Or, it can be expressed as "the source (or first terminal, etc.) of the transistor is electrically connected to X, the drain (or second terminal, etc.) of the transistor is electrically connected to Y, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor and Y are electrically connected in sequence." Or, it can be expressed as "X is electrically connected to Y through the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor, and X, the source (or first terminal, etc.) of the transistor, the drain (or second terminal, etc.) of the transistor, and Y are sequentially set to be connected to each other." By specifying the connection order in the circuit structure using the same expression method as this example, the source (or first terminal, etc.) and drain (or second terminal, etc.) of the transistor can be distinguished to determine the technical scope. Note that this display method is an example and is not limited to the above display method. Here, X and Y are objects (for example, devices, elements, circuits, wirings, electrodes, terminals, conductive films, layers, etc.).

[0035] In addition, even if independent components are electrically connected to each other on a circuit diagram, one component may have the functions of multiple components. For example, when a portion of a wiring is used as an electrode, one conductive film has the functions of both wiring and electrode. Therefore, the category of "electrically connected" in this specification also includes the case where one conductive film has the functions of multiple components.

[0036] In this specification, etc., "capacitor" includes, for example, a circuit element having an electrostatic capacitance value higher than 0F, a wiring area having an electrostatic capacitance value higher than 0F, a parasitic capacitance, a gate capacitance of a transistor, etc. Therefore, in this specification, etc., "capacitor" includes, in addition to a circuit element having a pair of electrodes and a dielectric between the electrodes, a parasitic capacitance generated between wirings and wirings, a gate capacitance generated between one of the source and drain of a transistor and the gate, etc. "Capacitor", "parasitic capacitance", "gate capacitance", etc. may also be referred to as "capacitor", etc., and on the contrary, "capacitor" may also be referred to as "capacitor", "parasitic capacitance", "gate capacitance", etc. In addition, the "pair of electrodes" of "capacitor" may also be referred to as "a pair of conductors", "a pair of conductive areas", "a pair of areas", etc. The electrostatic capacitance value may be, for example, greater than 0.05fF and less than 10pF. In addition, for example, it may also be greater than 1pF and less than 10μF.

[0037] In this specification, etc., a transistor includes three terminals: a gate, a source, and a drain. The gate is used as a control terminal to control the conduction state of the transistor. The two terminals used as the source or drain are the input and output terminals of the transistor. Depending on the conductivity type of the transistor (n-channel type, p-channel type) and the level of the potential applied to the three terminals of the transistor, one of the two input and output terminals is used as the source and the other is used as the drain. Therefore, in this specification, etc., the source and the drain can be interchanged. In this specification, etc., when describing the connection relationship of the transistor, the expressions "one of the source and the drain" (first electrode or first terminal) and "the other of the source and the drain" (second electrode or second terminal) are used. In addition, depending on the structure of the transistor, a back gate is sometimes included in addition to the above three terminals. In this case, in this specification, etc., one of the gate and the back gate of the transistor is sometimes referred to as the first gate, and the other of the gate and the back gate of the transistor is sometimes referred to as the second gate. In addition, in the same transistor, the "gate" and the "back gate" can sometimes be interchanged. In addition, when a transistor includes three or more gates, each gate may be referred to as a first gate, a second gate, a third gate, etc. in this specification and the like.

[0038] In this specification, a "node" may be referred to as a terminal, wiring, electrode, conductive layer, conductor, impurity region, etc., depending on the circuit structure or device structure. In addition, a terminal, wiring, etc. may also be referred to as a "node".

[0039] In addition, in this specification, etc., ordinal numbers such as "first", "second", and "third" are added to avoid confusion among constituent elements. Therefore, the ordinal numbers do not limit the number of constituent elements. In addition, the ordinal numbers do not limit the order of the constituent elements. For example, in this specification, etc., the "first" constituent element in one embodiment may be referred to as the "second" constituent element in other embodiments or claims. In addition, for example, in this specification, etc., the constituent element referred to by "first" in one embodiment may be omitted in other embodiments or claims.

[0040] In addition, in this specification, for the sake of convenience, words and phrases such as "upper", "lower", "above" or "below" that indicate configuration are sometimes used to explain the positional relationship of constituent elements with reference to the drawings. In addition, the positional relationship of constituent elements is appropriately changed according to the direction in which each structure is described. Therefore, the words and phrases described in the specification, etc. are not limited, and the words and phrases can be appropriately replaced according to the situation. For example, if it is an expression of "an insulator located on the top surface of a conductor", by rotating the direction of the illustrated drawing by 180 degrees, it can be replaced with "an insulator located below the conductor".

[0041] In addition, the terms "above" and "below" are not limited to the case where the positional relationship of the components is "directly above" or "directly below" and in direct contact. For example, if it is an expression "electrode B on insulating layer A", it is not necessarily necessary that electrode B is formed on insulating layer A in direct contact, and the case where other components are included between insulating layer A and electrode B may also be included.

[0042] In addition, in this specification, the term "overlap" and the like does not limit the state of the stacking order of the constituent elements. For example, "electrode B overlapping with insulating layer A" is not limited to the state of "electrode B formed on insulating layer A", but also includes the state of "electrode B formed under insulating layer A" or "electrode B formed on the right side (or left side) of insulating layer A".

[0043] In this specification, the words "adjacent" and "close to" do not limit the state of direct contact between components. For example, if it is an expression "electrode B adjacent to insulating layer A", it does not necessarily mean that insulating layer A and electrode B are directly in contact with each other, and it may also include the case where other components are included between insulating layer A and electrode B.

[0044] In addition, in this specification, etc., depending on the situation, the words "film" and "layer" can be interchanged with each other. For example, "conductive layer" can sometimes be replaced with "conductive film". In addition, "insulating film" can sometimes be replaced with "insulating layer". In addition, depending on the situation or state, other words can be used instead of words "film" and "layer". For example, "conductive layer" or "conductive film" can sometimes be replaced with "conductive body". In addition, "conductive body" can sometimes be replaced with "conductive layer" or "conductive film". In addition, for example, "insulating layer" or "insulating film" can sometimes be replaced with "insulator". In addition, "insulator" can sometimes be replaced with "insulating layer" or "insulating film".

[0045] Note that in this specification, etc., the words "electrode", "wiring", "terminal", etc. do not functionally limit their constituent elements. For example, sometimes an "electrode" is used as a part of a "wiring", and vice versa. Furthermore, "electrode" or "wiring" also includes a case where a plurality of "electrodes" or "wiring" are formed as one, etc. In addition, for example, sometimes a "terminal" is used as a part of a "wiring" or "electrode", and vice versa. Furthermore, the word "terminal" includes a case where a plurality of "electrodes", "wiring", "terminals", etc. are formed as one, etc. Therefore, for example, an "electrode" can be a part of a "wiring" or a "terminal", for example, a "terminal" can be a part of a "wiring" or an "electrode". In addition, the words "electrode", "wiring", "terminal", etc. are sometimes replaced with words such as "region".

[0046] In this specification, etc., the words "wiring", "signal line" and "power line" can be interchanged with each other depending on the situation or status. For example, "wiring" can sometimes be replaced with "signal line". In addition, for example, "wiring" can sometimes be replaced with "power line". Vice versa, "signal line" or "power line" can sometimes be replaced with "wiring". Sometimes "power line" can be replaced with "signal line". Vice versa, "signal line" can sometimes be replaced with "power line". In addition, depending on the situation or status, the "potential" applied to the wiring can be replaced with "signal". Vice versa, "signal" can sometimes be replaced with "potential".

[0047] In this specification, "parallel" refers to a state where the angle formed by two straight lines is greater than -10° and less than 10°. Therefore, it also includes a state where the angle is greater than -5° and less than 5°. "Approximately parallel" refers to a state where the angle formed by two straight lines is greater than -30° and less than 30°. In addition, "perpendicular" refers to a state where the angle formed by two straight lines is greater than 80° and less than 100°. Therefore, it also includes a state where the angle is greater than 85° and less than 95°. "Approximately perpendicular" refers to a state where the angle formed by two straight lines is greater than 60° and less than 120°.

[0048] In addition, in this specification, unless otherwise stated, when count values ​​or measurement values ​​are "same", "identical", "equal", or "uniform", etc., a variation of ±20% is included as an error.

[0049] The embodiments described in this specification are described with reference to the accompanying drawings. Note that a person skilled in the art can easily understand the fact that the embodiments can be implemented in a plurality of different forms, and the methods and details can be transformed into various forms without departing from the purpose and scope of the present invention. Therefore, the present invention should not be interpreted as being limited to the contents described in the embodiments. Note that in the structure of the invention in the embodiments, the same figure mark is sometimes used in different drawings to represent the same part or the part with the same function, and repeated description is omitted. In addition, when representing a part with the same function, the same hatching is sometimes used without adding a special figure mark. In a stereogram or a top view, for the sake of clarity, the illustration of some constituent elements is sometimes omitted.

[0050] In the drawings and the like according to this specification, the size, thickness of a layer or an area are sometimes exaggerated for the sake of clarity. Therefore, the present invention is not limited to the size or aspect ratio in the drawings. In addition, in the drawings, ideal examples are schematically shown, so the present invention is not limited to the shapes or values ​​shown in the drawings. For example, the unevenness of the signal, voltage or current caused by noise or timing deviation may be included.

[0051] In addition, arrows indicating the X direction, Y direction, and Z direction are sometimes attached in the drawings and the like according to this specification. In this specification and the like, the "X direction" refers to the direction along the X axis, and sometimes the positive direction and the negative direction are not distinguished except for the cases clearly stated. The "Y direction" and the "Z direction" are also the same as the "X direction". In addition, the X direction, the Y direction, and the Z direction are directions that intersect each other. More specifically, the X direction, the Y direction, and the Z direction are directions that are orthogonal to each other. In this specification and the like, sometimes one of the X direction, the Y direction, and the Z direction is referred to as the "first direction". In addition, sometimes the other one is referred to as the "second direction". In addition, sometimes the remaining one is referred to as the "third direction".

[0052] In this specification, etc., when the same symbol is used for multiple components and it is necessary to distinguish them, the symbol may be added with a symbol for identification such as "A", "b", "_1", "[n]", "[m, n]", etc.

[0053] In this specification, etc., a structure in which a connector such as an FPC (Flexible Printed Circuit) or TCP is installed on a substrate constituting a display device, or a structure in which an IC (integrated circuit) is directly mounted on a substrate constituting a display device using a COG method is sometimes referred to as a display device or a display module.

[0054] (Implementation Method 1) In this embodiment, a display device according to one embodiment of the present invention is described. One embodiment of the present invention is a display device having a touch panel function. The electrodes of the touch sensor are arranged to overlap with the display unit, and the electrodes are electrically connected to a first driving circuit formed in a monolithic manner on a substrate having a pixel circuit.

[0055] An in-cell touch panel in which a touch sensor is incorporated in a display device can reduce the number of components and thus reduce costs.

[0056] The pixel circuit and the first driving circuit may use transistors containing metal oxide in the semiconductor layer. In addition, the transistor included in the first driving circuit adopts a structure that is easy to miniaturize and can operate at high speed. This can reduce the area occupied by the circuit and contribute to narrowing the frame.

[0057] In addition, the second driving circuit (gate driver) and the third driving circuit (source driver) for driving the pixel circuit can also be formed using transistors containing metal oxide in the semiconductor layer, and the three driving circuits can be formed in a monolithic manner on a substrate on which the pixel circuit is formed.

[0058] By using one embodiment of the present invention having the above-mentioned features, the cost required for mounting an IC chip can be reduced, and a narrow frame of a display device can be achieved.

[0059] Figure 1 Schematic diagram for explaining a display device of one embodiment of the present invention. A display device of one embodiment of the present invention includes a conductive layer of pixels and electrodes constituting a touch sensor (hereinafter referred to as sensor electrodes) between a pair of substrates. A display device of one embodiment of the present invention includes a plurality of sensor electrodes overlapping a display portion. Note that Figure 1 A portion of the sensor electrode is shown cut away.

[0060] The display device 100 has a structure in which a sensor electrode 130 is provided between a substrate 110 and a substrate 140. A display unit 111 is provided on the substrate 110, and a sensor electrode 130 is provided on the display unit 111. As shown in the enlarged view, a pixel 120 constituting the display unit 111 includes a plurality of sub-pixels 122. By using a plurality of sub-pixels 122 having different luminescent colors, full-color display can be performed.

[0061] In addition, a driving circuit 114 (sensor driver) for driving the touch sensor is provided on the substrate 110 . The driving circuit 114 is electrically connected to the sensor electrodes 130 and the FPC 119 . In addition, the sensor electrodes 130 are also electrically connected to the FPC 119 .

[0062] In addition, a driving circuit 112 and a driving circuit 113 for driving the pixel circuit included in the pixel 120 are provided on the substrate 110. The driving circuit 112 and the driving circuit 113 are electrically connected to the FPC 118.

[0063] Note that FPC 118 and FPC 119 may be integrated into one. In addition, an example in which drive circuits 112, 113, and 114 are provided in a monolithic manner is shown, but any one or more of them may be replaced with a method in which an IC chip is mounted. In addition, depending on the type of touch sensor provided, drive circuit 114 may not be required.

[0064] Figure 2 2 is a block diagram illustrating the display device 100. The display device 100 includes a pixel array 121, a driving circuit 112, a driving circuit 113, and a driving circuit 114 provided in a display unit 111. The pixel array 121 includes pixels 120 arranged in a column direction and a row direction.

[0065] The pixel 120 includes a sub-pixel 122. The sub-pixel 122 has a function of emitting light for display.

[0066] Note that in this specification, etc., although for convenience, the minimum unit that performs independent operation in a "pixel" is defined as a "sub-pixel" for explanation, "pixel" can be replaced with "region" and "sub-pixel" can be replaced with "pixel".

[0067] The sub-pixel 122 includes a light-emitting device that emits visible light. As the light-emitting device, it is preferred to use an EL element such as OLED (Organic Light Emitting Diode) or QLED (Quantum-dot Light Emitting Diode). As the luminescent material contained in the EL element, there can be cited substances that emit fluorescence (fluorescent materials), substances that emit phosphorescence (phosphorescent materials), substances that exhibit thermally activated delayed fluorescence (thermally activated delayed fluorescence (TADF) materials), inorganic compounds (quantum dot materials, etc.). In addition, as the light-emitting device, LEDs such as Micro LED (Light Emitting Diode) can also be used.

[0068] The driving circuit 112 and the driving circuit 113 are drivers for driving the pixel 120. The driving circuit 114 is a driver for driving the touch sensor. As the driving circuit 112, the driving circuit 113, and the driving circuit 114, for example, a shift register circuit that operates at high speed can be used.

[0069] The driving circuit 112 can be used as a gate driver, and the driving circuit 113 can be used as a source driver. The driving circuit 112 is electrically connected to the sub-pixel 122 through the gate line GL. The driving circuit 113 is electrically connected to the sub-pixel 122 through the source line SL. The FPC 118 is electrically connected to the driving circuit 112 and the driving circuit 113, and a signal potential can be input from the outside through the FPC 118. Note that a demultiplexer can also be provided between the driving circuit 112 and the sub-pixel 122.

[0070] Sensor electrodes 130X and sensor electrodes 130Y used as electrodes of a touch sensor are provided on the pixel array 121. The sensor electrode 130X has a structure in which a plurality of conductive layers shown in a square shape are connected in the X direction. The sensor electrode 130Y has a structure in which a plurality of conductive layers shown in a square shape are connected in the Y direction.

[0071] Note that in the drawings described in this embodiment, the sizes of the sensor electrodes 130X and 130Y are examples and are not limited to the sizes shown in the drawings. The sizes of the sensor electrodes 130X and 130Y may be set according to the specifications of the product. For example, the configuration may be such that one of the conductive layers shown in a square shape has an area overlapping one or more and 100,000 or less pixels.

[0072] For example, the sensor electrode 130X may be electrically connected to the drive circuit 114. The drive circuit 114 may be connected to the FPC 119, and a signal potential may be input from the outside to the sensor electrode 130X through the FPC 119. In addition, the sensor electrode 130Y may be connected to the FPC 119, and a current flowing to the sensor electrode 130Y may be read through the FPC 119.

[0073] Figure 3A 1 is a top view showing a part of the touch sensor. The touch sensor includes a conductive layer 131X (131X1-131X3) provided in the X direction and used as a sensor electrode 130X, and a conductive layer 131Y (131Y1-131Y3) provided in the Y direction and used as a sensor electrode 130Y.

[0074] Note that Figure 3A The structure in which the conductive layer 131X and the conductive layer 131Y are regularly arranged in a square conductive layer is shown in the figure, but the present invention is not limited thereto. For example, the outer shape of the conductive layer may also be circular, triangular, pentagonal, hexagonal, octagonal, etc.

[0075] The conductive layer 131X and the conductive layer 131Y can be used as electrodes of an electrostatic capacitive touch sensor. As electrostatic capacitive touch sensors, there are surface electrostatic capacitive touch sensors, projected electrostatic capacitive touch sensors, etc. As projected electrostatic capacitive touch sensors, there are mainly self-capacitive touch sensors, mutual capacitive touch sensors, etc., depending on the driving method. When using mutual capacitive touch sensors, simultaneous multi-point detection is possible, so it is preferred.

[0076] When the projected self-capacitive method is adopted, a pulse voltage is supplied to the conductive layer 131X and the conductive layer 131Y in a scanning manner, and the current value flowing through them at this time is detected. When the detected object approaches, the magnitude of the current changes, so the position information of the detected object can be obtained by detecting the difference in the value of the current. In addition, when the projected mutual capacitance method is adopted, a pulse voltage is supplied to either the conductive layer 131X or the conductive layer 131Y in a scanning manner, and the position information of the detected object is obtained by detecting the current flowing through the other.

[0077] This embodiment shows an example in which the projected mutual capacitance method is used to connect the conductive layer 131X to the drive circuit 114 and detect the current flowing through the conductive layer 131Y. Note that when the projected self capacitance method is used, the drive circuit 114 may not be necessary.

[0078] The conductive layer 131X and the conductive layer 131Y are structured so that the insulating layer is sandwiched between the intersections to prevent short circuit. The insulating layer may be provided only at the intersections or may be provided to cover the conductive layer 131X. Figure 3B As shown, a conductive layer 132 for electrically connecting adjacent rectangular conductive layers may be provided at the intersection.

[0079] As the conductive layer 131X and the conductive layer 131Y, a light-transmitting conductive material is preferably used. As the light-transmitting conductive material, conductive oxides such as indium oxide, indium tin oxide, indium zinc oxide, zinc oxide, and zinc oxide doped with gallium can be used. In addition, a film containing graphene can also be used. The film containing graphene can be formed, for example, by reducing a film containing graphene oxide. As a reduction method, a method of heating can be cited.

[0080] In addition, a metal or alloy thinned to a thickness that allows light to pass through can be used. For example, a metal such as gold, silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum, iron, cobalt, copper, palladium or titanium or an alloy containing the metal can be used. Alternatively, a nitride of the metal or alloy (e.g., titanium nitride) can also be used. In addition, a laminated film in which two or more conductive films containing the above materials are stacked can also be used.

[0081] In addition, as the conductive layer 131X and the conductive layer 131Y, a conductive film processed to a degree that is too thin for the user to see can also be used. For example, by processing such a conductive film into a lattice shape (mesh shape), high conductivity and high visibility of the display device can be obtained. At this time, it is preferred that the conductive film has a width of 30nm or more and 100μm or less, preferably 50nm or more and 50μm or less, and more preferably 50nm or more and 20μm or less. In particular, a conductive film with a pattern width of 10μm or less is difficult to be seen by the user, so it is preferred.

[0082] As an example, Figure 3C The enlarged view of FIG. 1 shows an example in which a lattice-shaped conductive film is used as the conductive layer 131X. When a lattice-shaped conductive film is used, the transmittance of light emitted by the light-emitting device can be increased by arranging the conductive film so as not to overlap with the light-emitting device.

[0083] In addition, conductive nanowires can also be used as the conductive layer 131X and the conductive layer 131Y. By dispersing the nanowires at an appropriate density so that adjacent nanowires are in contact with each other, a two-dimensional network is formed, which can be used as a highly light-transmitting conductive film. For example, nanowires having an average diameter of 1 nm to 100 nm, preferably 5 nm to 50 nm, and more preferably 5 nm to 25 nm can be used. As nanowires, metal nanowires such as Ag nanowires, Cu nanowires, and Al nanowires, or carbon nanotubes can be used. For example, when Ag nanowires are used, a light transmittance of 89% or more and a film resistance of 40Ω / □ to 100Ω / □ or less can be achieved.

[0084] FIG. 4A to FIG. 4F : is a diagram illustrating a pixel layout. There is no particular limitation on the arrangement of sub-pixels, and various arrangement methods can be used. Examples of the arrangement of sub-pixels include stripe arrangement, S-stripe arrangement, matrix arrangement, Delta arrangement, Bayer arrangement, Pentile arrangement, and the like.

[0085] In addition, as the top surface shape of the sub-pixel, for example, there can be cited a triangle, a quadrangle (including a rectangle, a square), a polygon such as a pentagon, the above polygonal shapes with rounded corners, an ellipse or a circle, etc. Here, the top surface shape of the sub-pixel is equivalent to the top surface shape of the light-emitting region of the light-emitting device.

[0086] Figure 4A The pixels 120 are shown in an S-stripe arrangement. Figure 4A The pixel 120 shown is composed of three sub-pixels 122, namely, sub-pixels 122a, 122b, and 122c. For example, sub-pixel 122a may be a blue sub-pixel, sub-pixel 122b may be a red sub-pixel, and sub-pixel 122c may be a green sub-pixel.

[0087] Figure 4B The pixel 120 shown includes a sub-pixel 122a having a top surface shape that is approximately trapezoidal or approximately triangular with rounded corners, a sub-pixel 122b having a top surface shape that is approximately trapezoidal or approximately triangular with rounded corners, and a sub-pixel 122c having a top surface shape that is approximately quadrilateral or approximately hexagonal with rounded corners. In addition, the light-emitting area of ​​sub-pixel 122a is larger than that of sub-pixel 122b. In this way, the shape and size of each sub-pixel can be determined independently. For example, the size of a sub-pixel including a light-emitting device with high reliability can be made smaller. For example, sub-pixel 122a can be a green sub-pixel, sub-pixel 122b can be a red sub-pixel, and sub-pixel 122c can be a blue sub-pixel.

[0088] Figure 4C The pixels 120a and 120b shown are arranged in a Pentile arrangement. Figure 4CThe example of alternately configuring pixel 120a including sub-pixel 122a and sub-pixel 122b and pixel 120b including sub-pixel 122b and sub-pixel 122c is shown. For example, sub-pixel 122a may be a red sub-pixel, sub-pixel 122b may be a green sub-pixel, and sub-pixel 122c may be a blue sub-pixel.

[0089] Figure 4D and Figure 4E The pixels 120a, 120b are shown in a Delta arrangement. Figure 4D This is an example in which each sub-pixel has a top surface shape that is approximately quadrangular with rounded corners. Figure 4E This is an example in which each sub-pixel has a circular top surface shape.

[0090] Pixel 120a includes two sub-pixels (sub-pixels 122a and 122b) in the previous row (first row) and one sub-pixel (sub-pixel 122c) in the next row (second row). Pixel 120b includes one sub-pixel (sub-pixel 122c) in the previous row (first row) and two sub-pixels (sub-pixels 122a and 122b) in the next row (second row). For example, sub-pixel 122a may be a red sub-pixel, sub-pixel 122b may be a green sub-pixel, and sub-pixel 122c may be a blue sub-pixel.

[0091] Figure 4F This is an example where the sub-pixels of each color are arranged in a zigzag shape. Specifically, when viewed from above, the upper sides of two sub-pixels arranged in the column direction (for example, sub-pixel 122a and sub-pixel 122b or sub-pixel 122b and sub-pixel 122c) are offset. For example, sub-pixel 122a may be a red sub-pixel, sub-pixel 122b may be a green sub-pixel, and sub-pixel 122c may be a blue sub-pixel.

[0092] In photolithography, the finer the pattern being processed, the more important it is to ignore the effect of light diffraction. Therefore, when the pattern of the photomask is transferred by exposure, its fidelity decreases, and it is difficult to process the resist mask into a desired shape. Therefore, even if the pattern of the photomask is rectangular, it is easy to form a pattern with rounded corners. Therefore, the top surface shape of the sub-pixel is sometimes a polygon with rounded corners, an ellipse, or a circle.

[0093] Figure 5A FIG. 1 shows an example of a pixel circuit that can be used for the sub-pixel 122. The pixel circuit includes a transistor M1, a transistor M2, a transistor M3, a capacitor C1, and a light emitting device EL. In addition, a gate line GL and a source line SL are electrically connected to the pixel circuit (see FIG. 1 ). Figure 2 ).

[0094] In the transistor M1, the gate is electrically connected to the gate line GL, one of the source and the drain is electrically connected to the source line SL, and the other of the source and the drain is electrically connected to one electrode of the capacitor C1 and the gate of the transistor M2. In the transistor M2, one of the source and the drain is electrically connected to the wiring AL, and the other of the source and the drain is electrically connected to one electrode of the light emitting device EL, the other electrode of the capacitor C1, and one of the source and the drain of the transistor M3. In the transistor M3, the gate is electrically connected to the gate line GL, and the other of the source and the drain is electrically connected to the wiring RL. The other electrode of the light emitting device EL is electrically connected to the wiring CL.

[0095] The source line SL is supplied with a data potential D. The gate line GL is supplied with a selection signal, which includes a potential for turning on the transistor and a potential for turning off the transistor.

[0096] The wiring RL is supplied with a reset potential. The wiring AL is supplied with an anode potential. The wiring CL is supplied with a cathode potential. The anode potential in the sub-pixel 122 is a potential higher than the cathode potential. In addition, the reset potential supplied to the wiring RL may be a potential that makes the potential difference between the reset potential and the cathode potential smaller than the threshold voltage of the light-emitting device EL. The reset potential may be a potential higher than the cathode potential, a potential equal to the cathode potential, or a potential lower than the cathode potential.

[0097] The transistor M1 and the transistor M3 are used as switches. The transistor M2 is used as a transistor for controlling the current flowing through the light emitting device EL. For example, it can also be said that the transistor M1 is used as a selection transistor and the transistor M2 is used as a driving transistor.

[0098] Here, transistors M1 to M3 may use transistors containing metal oxide in the channel formation region (hereinafter referred to as OS transistors). Alternatively, transistors M1 to M3 may use transistors containing silicon (single crystal silicon, polycrystalline silicon, microcrystalline silicon or amorphous silicon) in the channel formation region (hereinafter referred to as Si transistors). Alternatively, OS transistors may be used for transistors M1 and M3, and Si transistors may be used for transistor M2.

[0099] In addition, the following structure may be adopted: one or more of the multiple transistors included in the driving circuits 112, 113, and 114 use Si transistors, and the other transistors use OS transistors. Alternatively, the following structure may be adopted: one or more of the multiple transistors included in the driving circuits 112, 113, and 114 are composed of Si transistors, and the other are composed of OS transistors.

[0100] As an OS transistor, a transistor in which an oxide semiconductor is used for a semiconductor layer forming a channel can be used. For example, the semiconductor layer preferably contains indium, M (M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten and magnesium) and zinc. In particular, M is preferably selected from one or more of aluminum, gallium, yttrium and tin. In particular, as a semiconductor layer of an OS transistor, an oxide containing indium, gallium and zinc (also recorded as IGZO) is preferably used. Alternatively, an oxide containing indium, tin and zinc is preferably used. Alternatively, an oxide containing indium, gallium, tin and zinc is preferably used.

[0101] A transistor using an oxide semiconductor whose band gap is wider than silicon and whose carrier concentration is lower than silicon can achieve an extremely low off-state current. Due to its low off-state current, the charge stored in the capacitor connected in series with the transistor can be maintained for a long period of time. Therefore, in particular, transistors M1 and transistor M3 connected in series with capacitor C1 preferably use transistors containing oxide semiconductors. By using transistors containing oxide semiconductors as transistors M1 and transistor M3, the charge maintained in capacitor C1 can be prevented from leaking through transistor M1 or transistor M3. In addition, the charge stored in capacitor C1 can be maintained for a long period of time, so a static image can be displayed for a long period of time without rewriting the pixel data.

[0102] Note that Figure 5A The transistor shown in FIG. 1 is an n-channel transistor, but a p-channel transistor may also be used.

[0103] In addition, as a transistor included in the pixel circuit, a transistor including a pair of gate electrodes overlapping with a semiconductor layer interposed therebetween can be used.

[0104] In the case of a transistor including a pair of gates having a structure in which the pair of gates are electrically connected to each other and supplied with the same potential, there are advantages such as an improved on-state current of the transistor and an improved saturation characteristic. In addition, a potential for controlling the threshold voltage of the transistor can also be supplied to one of the pair of gates. In addition, by supplying a constant potential to one of the pair of gates, the stability of the electrical characteristics of the transistor can be improved. For example, one gate of the transistor can be electrically connected to a wiring supplied with a constant potential, and one gate of the transistor can be electrically connected to the source or drain of the transistor itself.

[0105] Figure 5B The pixel circuit shown is an example of a case where a transistor including a pair of gates is used for the transistor M1 and the transistor M3. In each of the transistor M1 and the transistor M3, a pair of gates are electrically connected to each other. By adopting such a structure, the data writing period to the pixel circuit can be shortened.

[0106] Figure 5CThe pixel circuit shown is an example of a case where a transistor including a pair of gates is used not only for the transistor M1 and the transistor M3 but also for the transistor M2. The pair of gates of the transistor M2 is electrically connected to each other. By using such a transistor for the transistor M2, the saturation characteristic is improved, so that the control of the light emitting brightness of the light emitting device EL becomes easier, and the display quality can be improved.

[0107] Next, the method of the light emitting device and the method of connecting the sensor electrode and the driving circuit 114 will be described.

[0108] One embodiment of the present invention is a display device including a light-emitting device. For example, by making a pixel include three light-emitting devices that emit red (R), green (G) or blue (B) light, a full-color display device can be realized. Note that in the following description, a component such as a light-emitting layer sandwiched by a pair of electrodes included in a light-emitting device is referred to as an EL layer.

[0109] Note that in this specification, etc., a device manufactured using a metal mask or FMM (Fine Metal Mask) is sometimes referred to as a device with an MM (Metal Mask) structure. In addition, in this specification, etc., a device manufactured without using a metal mask or FMM is sometimes referred to as a device with an MML (Metal Mask Less) structure. A display device including a device with an MML structure is not manufactured using a metal mask, so the degree of freedom in design of its pixel configuration and pixel shape is higher than that of a display device including a device with an FMM structure or an MM structure.

[0110] In the method for manufacturing a display device with an MML structure, the island-shaped organic layer (hereinafter, EL layer) constituting the organic EL element is not formed using a pattern of a metal mask, but is formed by depositing the EL layer on the entire surface and then processing the EL layer. Therefore, a high-definition display device or a display device with a high aperture ratio that has been difficult to achieve so far can be realized. In addition, since the EL layer of each color can be formed separately, a display device with extremely clear, high contrast and high display quality can be realized. In addition, by providing a sacrificial layer on the EL layer, damage to the EL layer in the manufacturing process of the display device can be reduced, and the reliability of the light-emitting device can be improved.

[0111] For example, in the formation method using a metal mask, it is difficult to set the interval between two adjacent EL layers to less than 10 μm, but according to the above method, the interval can be reduced to less than 3 μm, less than 2 μm, or less than 1 μm. For example, by using an exposure device for LSI, the interval can be reduced to less than 500 nm, less than 200 nm, less than 100 nm, and further less than 50 nm. As a result, the area of ​​the non-luminous region that may exist between the two light-emitting devices can be greatly reduced, so that the aperture ratio can be close to 100%. For example, an aperture ratio of more than 50%, more than 60%, more than 70%, more than 80%, and further more than 90% and less than 100% can be achieved.

[0112] In addition, the size of the EL layer itself can also be significantly reduced compared to the case of using a metal mask. In addition, for example, in the case of separately forming the EL layer using a metal mask, the thickness of the center and the end of the island-shaped EL layer is different, so the effective area that can be used as the light-emitting area relative to the area of ​​the entire EL layer becomes smaller. On the other hand, in the above-mentioned manufacturing method, the island-shaped EL layer is formed by processing a film deposited to a uniform thickness, so the thickness can be made uniform, and even if the size of the EL layer is fine, almost all of its area can be used as a light-emitting area. Therefore, according to the above-mentioned manufacturing method, both high definition and high aperture ratio can be achieved.

[0113] Most organic films formed using FMM (Fine Metal Mask) are films with extremely small taper angles (for example, greater than 0 degrees and less than 30 degrees) that are thinner as they get closer to the end. Therefore, the side of the organic film formed using FMM is continuously connected to the top surface, and it is difficult to clearly identify the side. On the other hand, one embodiment of the present invention includes an EL layer that is not processed using FMM, so it has a clear side. In particular, in one embodiment of the present invention, it is preferred to have a portion where the taper angle of the EL layer is greater than 30 degrees and less than 90 degrees, and preferably a portion where the taper angle is greater than 60 degrees and less than 90.

[0114] Note that in this specification, etc., the tapered shape of the end of an object means that the angle between the side surface (surface) and the formed surface (bottom surface) in the region of the end is greater than 0 degrees and less than 90 degrees, and the object has a cross-sectional shape in which the thickness continuously increases from the end. In addition, the taper angle refers to the angle between the bottom surface (formed surface) and the side surface (surface) of the end of the object.

[0115] A more specific example is described below.

[0116] Fig. 6AA plan view schematically showing a display device 100 is illustrated. The display device 100 includes a plurality of light-emitting devices 90R that emit red light, a plurality of light-emitting devices 90G that emit green light, and a plurality of light-emitting devices 90B that emit blue light. In addition, sensor electrodes 130X or 130Y, which are electrodes serving as touch sensors, are provided on the above-described light-emitting devices.

[0117] The light-emitting devices 90R, 90G, and 90B are all arranged in a matrix. Note that the arrangement method of the light-emitting devices is not limited to this, and arrangement methods such as stripe arrangement, S-stripe arrangement, Delta arrangement, Bayer arrangement, or zigzag arrangement can be used, and Pentile arrangement or Diamond arrangement can also be used.

[0118] In addition, Fig. 6A A connection electrode 311a electrically connected to a common electrode 313 is illustrated. The connection electrode 311a is supplied with a potential (for example, an anode potential or a cathode potential) for supplying to the common electrode 313. That is, it can also be said that the connection electrode 311a is a part of a power line. The connection electrode 311a is provided outside a display portion in which the light-emitting devices 90R and the like are arranged, and is electrically connected by the common electrode 313 and a connection portion 330a.

[0119] The connection electrode 311a can be provided along the outer periphery of the display portion. For example, it can be provided along one side of the outer periphery of the display portion, or can straddle two or more sides of the outer periphery of the display area. That is, in the case where the top surface shape of the display area is rectangular, the top surface shape of the connection electrode 311a can be strip-shaped, L-shaped, "冂"-shaped (bracket-shaped), or quadrangular.

[0120] In addition, Fig. 6A A connection electrode 311b electrically connected to the sensor electrode 130X is illustrated. The connection electrode 311b is electrically connected to a transistor included in a driving circuit 114. A connection portion 330b between the sensor electrode 130X and the connection electrode 311b is provided outside (on the opposite side of the display portion) a connection portion 330a between the common electrode 313 and the connection electrode 311a.

[0121] Note that this transistor has a function of inputting a pulse voltage to the connection electrode 311b. That is, the connection electrode 311b is electrically connected to the source or drain of this transistor.

[0122] In addition, Fig. 6A An example in which a conductive layer constituting the sensor electrode 130X extends to a connection portion 330b with the connection electrode 311b is illustrated, but the conductive layer can also be electrically connected to a low-resistance metal layer and the metal layer can be electrically connected to the connection electrode 311b.

[0123] Figure 6B corresponds to Fig. 6A Schematic cross-sectional view of the dot-dashed lines A1-A2, B1-B2 and C1-C2. Figure 6B A schematic cross-sectional view of a light emitting device 90G, a light emitting device 90B, a connecting electrode 311 a and a connecting electrode 311 b provided on the insulating layer 301 is shown.

[0124] Note that the light emitting device 90R not shown in the cross-sectional schematic diagram may have the same structure as the light emitting device 90G or the light emitting device 90B.

[0125] The light emitting device 90G includes a pixel electrode 311, an organic layer 312G and a common electrode 313. The light emitting device 90B includes a pixel electrode 311, an organic layer 312B and a common electrode 313. The common electrode 313 is provided in both the light emitting device 90G and the light emitting device 90B. The pixel electrodes 311 are provided separately from each other.

[0126] The organic layer 312G includes a light-emitting organic compound having at least a peak wavelength in the green wavelength region. The organic layer 312B includes a light-emitting organic compound having at least a peak wavelength in the blue wavelength region. The organic layer 312G and the organic layer 312B may also be referred to as EL layers.

[0127] In addition, the organic layer 312G and the organic layer 312B may include one or more of an electron injection layer, an electron transport layer, a hole injection layer, and a hole transport layer.

[0128] Here, the uppermost layer in the stacked structure of the organic layer 312G and the organic layer 312B, that is, the layer in contact with the common electrode 313, is preferably a layer other than the light-emitting layer. For example, it is preferred to adopt a structure in which an electron injection layer, an electron transport layer, a hole injection layer, a hole transport layer, or a layer other than the above layers is provided to cover the light-emitting layer and the layer is in contact with the common electrode 313. In this way, when manufacturing each light-emitting device, the top surface of the light-emitting layer can be protected by other layers, thereby improving the reliability of the light-emitting device.

[0129] The pixel electrode 311 is provided in each light-emitting device. In addition, the common electrode 313 is provided as a continuous layer commonly used in each light-emitting device. A conductive film having light transmittance to visible light is used on one side of the pixel electrode 311 and the common electrode 313, and a conductive film having reflectivity is used on the other side. By making each pixel electrode light transmittance and making the common electrode 313 reflective, a bottom emission type (bottom emission structure) display device can be realized. In contrast, by making each pixel electrode reflective and making the common electrode 313 light transmittance, a top emission type (top emission structure) display device can be realized. In addition, by making both each pixel electrode and the common electrode 313 light transmittance, a double-sided emission type (double-sided emission structure) display device can be realized.

[0130] An insulating layer 340 is provided to cover the end of the pixel electrode 311. The end of the insulating layer 340 is preferably tapered. Note that in this specification, "the end of the object has a tapered shape" means that the object has a cross-sectional shape in which the angle formed by the surface and the formed surface in the region of the end is greater than 0 degrees and less than 90 degrees, and the thickness gradually increases from the end.

[0131] In addition, by using an organic resin for the insulating layer 340 , the surface thereof can be formed into a gently curved surface. Therefore, the coverage of the film formed on the insulating layer 340 can be improved.

[0132] Examples of a material that can be used for the insulating layer 340 include acrylic resin, polyimide resin, epoxy resin, polyamide resin, polyimideamide resin, siloxane resin, benzocyclobutene resin, phenol resin, and precursors of these resins.

[0133] Alternatively, an inorganic insulating material may be used for the insulating layer 340. As the inorganic insulating material that can be used for the insulating layer 340, for example, an oxide or nitride such as silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, or hafnium oxide may be used. In addition, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, and neodymium oxide may also be used.

[0134] like Figure 6B As shown, two organic layers are separately provided between light-emitting devices of different light-emitting colors, and a gap is provided between them. As described above, it is preferred that the organic layer 312G and the organic layer 312B are provided in a non-contact manner. Thus, it is possible to well prevent the two adjacent organic layers from passing current and causing unintentional light emission. Therefore, the contrast can be improved and a display device with high display quality can be realized.

[0135] The ends of the organic layer 312G and the organic layer 312B preferably have a taper angle of 30 degrees or more. Preferably, the angle between the side surface (surface) and the bottom surface (formed surface) of each end of the organic layer 312G and the organic layer 312B is 30 degrees or more and 120 degrees or less, preferably 45 degrees or more and 120 degrees or less, and more preferably 60 degrees or more and 120 degrees or more. Alternatively, the taper angles of the organic layer 312G and the organic layer 312B are preferably 90 degrees or more or less (for example, 80 degrees or more and 100 degrees or less).

[0136] A protective layer 321 is disposed on the common electrode 313. The protective layer 321 has a function of preventing impurities such as water from diffusing from above to each light emitting device.

[0137] The protective layer 321 may have, for example, a single-layer structure or a stacked-layer structure including at least an inorganic insulating film. Examples of the inorganic insulating film include oxide films or nitride films such as silicon oxide films, silicon oxynitride films, silicon nitride oxide films, silicon nitride films, aluminum oxide films, aluminum oxynitride films, and hafnium oxide films. Alternatively, a semiconductor material such as indium gallium oxide or indium gallium zinc oxide may be used as the protective layer 321.

[0138] In addition, a laminated film of an inorganic insulating film and an organic insulating film can also be used as the protective layer 321. For example, it is preferred to sandwich an organic insulating film between a pair of inorganic insulating films. In addition, the organic insulating film is preferably used as a planarizing film. Therefore, the top surface of the organic insulating film can be made flat, so the coverage of the inorganic insulating film thereon is improved, thereby improving the barrier properties. In addition, when a structure (for example, an antenna, an electrode of a touch sensor, a color filter or a lens array, etc.) is provided above the protective layer 321, it is preferred to reduce the influence of the concave-convex shape caused by the underlying structure.

[0139] Figure 6B An example is shown in which an insulating layer 322 used as a planarization film is provided on a protective layer 321, and sensor electrodes 130X and 130Y used as electrodes of a touch sensor are provided on the insulating layer 322. Note that the insulating layer 322 may also be used as a solid sealing layer for improving the reliability of the light-emitting device. In addition, a layer corresponding to the insulating layer 322 may be formed not only as a single layer but also as a plurality of layers.

[0140] Notice, Figure 6B 1 shows an example in which the sensor electrodes 130X and 130Y are provided using a light-transmitting conductive film. When the sensor electrodes 130X and 130Y are provided using a lattice-shaped metal conductive film or the like, it is preferable that Figure 6C As shown, it is provided at a position that does not overlap with the light emitting devices 90G and 90B or at a position where the overlapping area is small.

[0141] In the connection portion 330a, a common electrode 313 is provided on the connection electrode 311a so as to be in contact therewith, and a protective layer 321 is provided so as to cover the common electrode 313. In addition, an insulating layer 340 is provided so as to cover the end of the connection electrode 311a.

[0142] In the connection portion 330b, the connection electrode 311b is electrically connected to the sensor electrode 130X through the openings provided in the insulating layer 322 and the protective layer 321. Here, since the sensor electrode 130X can use a material with a high resistance, it is preferable to provide a metal layer 315 between the sensor electrode 130X and the connection electrode 311b. By providing the metal layer 315, the contact resistance between the sensor electrode 130X and the connection electrode 311b can be reduced.

[0143] Note that contact resistance does not have an effect, and Fig.6D The structure shown in FIG. 1 is a structure in which the sensor electrode 130 is directly connected to the connection electrode 311b. Fig. 6E As shown, a structure in which the insulating layer 322 is not provided near the connection portion 330b may be adopted.

[0144] The following pairs Figure 6B Specifically, an example in which the insulating layer 340 is not provided is shown.

[0145] Fig. 7A An example is shown in which the side surface of the pixel electrode 311 substantially coincides with the side surface of the organic layer 312G or the organic layer 312B.

[0146] exist Fig. 7A In the embodiment, an insulating layer 325 is provided in contact with the organic layer 312G, the organic layer 312B and the side surface of the pixel electrode 311. The insulating layer 325 can effectively prevent the pixel electrode 311 and the common electrode 313 from being electrically short-circuited and leakage current therebetween.

[0147] The insulating layer 325 may be an insulating layer containing an inorganic material. As the insulating layer 325, an inorganic insulating film such as an oxide insulating film, a nitride insulating film, an oxynitride insulating film, and a nitride oxide insulating film may be used. The insulating layer 325 may be a single-layer structure or a stacked-layer structure. As the oxide insulating film, a silicon oxide film, an aluminum oxide film, a magnesium oxide film, an indium gallium zinc oxide film, a gallium oxide film, a germanium oxide film, an yttrium oxide film, a zirconium oxide film, a lanthanum oxide film, a neodymium oxide film, a hafnium oxide film, and a tantalum oxide film may be cited. As the nitride insulating film, a silicon nitride film and an aluminum nitride film may be cited. As the oxynitride insulating film, an oxynitride silicon film and an oxynitride aluminum film may be cited. As the nitride oxide insulating film, a silicon nitride oxide film and an aluminum nitride oxide film may be cited. In particular, by using an inorganic insulating film such as an aluminum oxide film, a hafnium oxide film, and a silicon oxide film formed by the ALD method for the insulating layer 325, an insulating layer 325 having fewer pinholes and excellent function of protecting the organic layer may be formed.

[0148] In this specification, etc., "oxynitride" refers to a material containing more oxygen than nitrogen in its composition, and "nitride oxide" refers to a material containing more nitrogen than oxygen in its composition. For example, "silicon oxynitride" refers to a material containing more oxygen than nitrogen in its composition, and "silicon nitride oxide" refers to a material containing more nitrogen than oxygen in its composition.

[0149] The insulating layer 325 can be formed by a sputtering method, a CVD method, a PLD method, an ALD method, or the like. Preferably, the insulating layer 325 is formed by an ALD method having excellent coverage.

[0150] In addition, between two adjacent light-emitting devices, a resin layer 326 is provided to fill the gap between two opposing pixel electrodes and the gap between two opposing organic layers. The resin layer 326 can flatten the surface on which the common electrode 313 and the like are formed, thereby preventing the common electrode 313 from being disconnected due to poor coverage of the step between adjacent light-emitting devices.

[0151] As the resin layer 326, an insulating layer containing an organic material can be suitably used. For example, as the resin layer 326, acrylic resin, polyimide resin, epoxy resin, imide resin, polyamide resin, polyimide amide resin, silicone resin, siloxane resin, benzocyclobutene resin, phenolic resin and precursors of the above resins can be used. In addition, as the resin layer 326, organic materials such as polyvinyl alcohol (PVA), polyvinyl butyral, polyvinyl pyrrolidone, polyethylene glycol, polyglycerol, pullulan, water-soluble cellulose, alcohol-soluble polyamide resin can also be used. In addition, as the resin layer 326, a photosensitive resin can also be used. As the photosensitive resin, a photoresist can also be used. As the photosensitive resin, a positive material or a negative material can also be used.

[0152] In addition, a material that absorbs visible light is preferably used as the resin layer 326. When a material that absorbs visible light is used as the resin layer 326, the light emitted from the EL layer can be absorbed by the resin layer 326, thereby shielding stray light from adjacent pixels and suppressing color mixing. Therefore, a display device with high display quality can be provided.

[0153] Since the insulating layer 325 is provided between the resin layer 326 and the organic layer 312G and the like, impurities such as moisture in the resin layer 326 can be prevented from diffusing into the organic layer 312G and the like, thereby providing a highly reliable display device.

[0154] In addition, a mechanism may be provided in which a reflective film (for example, a metal film comprising one or more selected from silver, palladium, copper, titanium and aluminum) is provided between the insulating layer 325 and the resin layer 326 so that the reflective film reflects light emitted by the light-emitting layer to improve light extraction efficiency.

[0155] Figure 7B The example in which the width of the pixel electrode 311 is larger than the width of the organic layer 312G or the organic layer 312B is shown. The organic layer 312G and the like are located inside the end of the pixel electrode 311 .

[0156] The insulating layer 325 is provided to cover the side surfaces of the organic layer included in the light emitting device and a part of the top surface and the side surfaces of the pixel electrode 311. The resin layer 326 is provided between two adjacent light emitting devices and is provided to contact the insulating layer 325.

[0157] Figure 7CThe example in which the width of the pixel electrode 311 is smaller than the width of the organic layer 312G or the organic layer 312B is shown. The organic layer 312G and the like extend outward beyond the end of the pixel electrode 311 .

[0158] The insulating layer 325 is provided in a manner of contacting the side surfaces of the organic layers of two adjacent light-emitting devices. In addition, the insulating layer 325 may be provided in a manner of covering not only the side surfaces of the organic layer 312G, etc., but also a portion of the top surface thereof. The resin layer 326 is located between two adjacent light-emitting devices and is provided in a manner of contacting the insulating layer 325.

[0159] Here, a structural example of the resin layer 326 will be described.

[0160] The top surface of the resin layer 326 is preferably as flat as possible, but the surface of the resin layer 326 may be concave or convex depending on the concavo-convex shape of the surface on which the resin layer 326 is formed, the formation conditions of the resin layer 326, and the like.

[0161] Fig.7D It is shown in Figure 7C An enlarged cross-sectional view of an example in which the surface of the resin layer 326 has a concavo-convex shape in the structure.

[0162] The ends of the pixel electrode 311G and the pixel electrode 311B have a tapered shape. In addition, the organic layer 312G is formed in a manner covering the end of the pixel electrode 311G, and the organic layer 312B is formed in a manner covering the end of the pixel electrode 311B. In addition, the insulating layer 301 has a concave portion between the pixel electrode 311G and the pixel electrode 311B. The concave portion is formed when processing the pixel electrode 311G and the pixel electrode 311B.

[0163] In addition, an insulating layer 325 is provided in a manner covering the ends of the organic layer 312G and the organic layer 312B, and a protective layer 327G is provided in a region between the organic layer 312G and the insulating layer 325. In addition, a protective layer 327B is provided in a region between the organic layer 312B and the insulating layer 325. The protective layer 327G and the protective layer 327B are used as masks (also referred to as hard masks) when processing the organic layer 312G and the organic layer 312B, respectively. As the organic layer 312G and the organic layer 312B, an inorganic film can be used, and more specifically, an inorganic conductive film (typically tungsten) or an inorganic insulating film (typically silicon oxide, silicon nitride, or aluminum oxide) can be used.

[0164] In addition, a recessed portion is formed in the insulating layer 301 in a region between the organic layer 312G and the organic layer 312B. The recessed portion is formed when the organic layer 312G and the organic layer 312B are processed.

[0165] Note that the common electrode 313 and the protective layer 321 are provided so as to cover the organic layer 312G, the organic layer 312B, the protective layer 327G, the protective layer 327B, the insulating layer 325 , and the resin layer 326 .

[0166] It is preferable that at least a portion of the end portion of the resin layer 326 has a tapered shape when viewed in cross section because coverage with the common electrode 313 can be improved.

[0167] Notice, FIG. 6A to FIG. 6E and 7A to 7D The described embodiments and components are merely examples, and one embodiment of the present invention may adopt other structures.

[0168] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0169] (Implementation Method 2) In this embodiment, a vertical transistor which can be used for the driver circuits 112, 113, and 114 and the pixel 120 described in Embodiment 1 is described. The vertical transistor can be easily miniaturized and has a structure capable of high-speed operation.

[0170] Fig. 8A and Figure 8B A diagram illustrating a vertical transistor. Fig. 8A It is a top view. Figure 8B It is shown Fig. 8A For the sake of clarity, Fig. 8A and Figure 8B Some components are omitted.

[0171] The transistor 100T as a vertical transistor can be provided on the substrate 402. The transistor 100T includes a conductive layer 404, a conductive layer 404e, an insulating layer 406, a semiconductor layer 408, a conductive layer 412a, and a conductive layer 412b. The conductive layer 404 is a gate wiring and is electrically connected to the conductive layer 404e used as a gate electrode. A portion of the insulating layer 406 is used as a gate insulating layer. The conductive layer 412a is used as one of a source electrode and a drain electrode. The conductive layer 412b is used as the other of the source electrode and the drain electrode.

[0172] In the semiconductor layer 408, the entire region overlapping the gate electrode with the gate insulating layer between the source electrode and the drain electrode is used as a channel formation region. In addition, in the semiconductor layer 408, the region in contact with the source electrode is used as a source region, and the region in contact with the drain electrode is used as a drain region.

[0173] The conductive layer 412a is provided on the substrate 402, the insulating layer 407 is provided on the conductive layer 412a, and the conductive layer 412b is provided on the insulating layer 407. The insulating layer 407 includes a region sandwiched by the conductive layer 412a and the conductive layer 412b. The conductive layer 412a includes a region overlapping with the conductive layer 412b via the insulating layer 407. The insulating layer 407 and the conductive layer 412b include an opening 441 that reaches the conductive layer 412a.

[0174] The conductive layer 412a and the conductive layer 412b may each have a stacked-layer structure. Figure 8B An example in which the conductive layer 412a has a stacked-layer structure of a conductive layer 412a_1 and a conductive layer 412a_2 is shown. Figure 8B Although the example shows a region where the conductive layer 412a_2 is not provided on the conductive layer 412a_1 and the conductive layer 412a_1 is in contact with the semiconductor layer 408 in the region, a structure in which the conductive layer 412a_2 is in contact with the semiconductor layer 408 may be employed. Alternatively, a structure in which the conductive layer 412a_2 is not provided may be employed.

[0175] The top surface shape of the opening 441 may be, for example, circular or elliptical. Since the top surface shape of the opening 441 is circular, the processing accuracy when forming the opening 441 can be improved, so that a fine opening 441 can be formed. In addition, the top surface shape of the opening 441 may also be a polygon such as a triangle, a quadrangle (including a rectangle, a rhombus, a square), a pentagon, or the above polygonal shape with rounded corners. The opening 441 may be formed, for example, using a resist mask.

[0176] The semiconductor layer 408 is provided so as to cover the opening 441. The semiconductor layer 408 includes a region in contact with the top surface and the side surface of the conductive layer 412b, the side surface of the insulating layer 407, and the top surface of the conductive layer 412a. The semiconductor layer 408 is electrically connected to the conductive layer 412a through the opening 441. The semiconductor layer 408 has a shape along the top surface and the side surface of the conductive layer 412b, the side surface of the insulating layer 407, and the top surface of the conductive layer 412a.

[0177] In addition, Figure 8B Although the semiconductor layer 408 has a single-layer structure, one embodiment of the present invention is not limited thereto. The semiconductor layer 408 may have a stacked-layer structure of two or more layers.

[0178] The insulating layer 406 used as a gate insulating layer of the transistor 100T is provided over the semiconductor layer 408 , the conductive layer 412 b , and the insulating layer 407 so as to cover the recessed portion derived from the opening 441 .

[0179] The conductive layer 404e of the transistor 100T is provided on the insulating layer 406 so as to cover the recessed portion derived from the opening 441. Here, an insulating layer (not shown) is preferably provided on the conductive layer 404e and the insulating layer 406. The insulating layer has an opening that reaches the conductive layer 404e, and the conductive layer 404 used as a gate line is electrically connected to the conductive layer 404e in the opening.

[0180] In the opening 441, the conductive layer 404e includes a region overlapping with the semiconductor layer 408 via the insulating layer 406. In addition, the conductive layer 404e includes a region overlapping with the conductive layer 412a and a region overlapping with the conductive layer 412b via the insulating layer 406 and the semiconductor layer 408. The conductive layer 404e preferably covers the end of the conductive layer 412b on the side of the opening 441. By adopting such a structure, the entire region overlapping with the gate electrode via the gate insulating layer between the source electrode and the drain electrode in the semiconductor layer 408 can be used as a channel formation region.

[0181] The transistor 100T is a so-called top-gate transistor having a gate electrode above the semiconductor layer 408. Since the bottom surface of the semiconductor layer 408 is in contact with the source electrode or the drain electrode, it can be said to be a TGBC (Top Gate Bottom Contact) type transistor.

[0182] The conductive layer 412a, the conductive layer 412b, and the conductive layer 404 can all be used as wiring, and the transistor 100T can be provided in a region where these wirings overlap. That is, in a circuit including the transistor 100T and the wiring, the occupied area of ​​the transistor 100T and the wiring can be reduced. Therefore, the occupied area of ​​the circuit can be reduced.

[0183] In the transistor of one embodiment of the present invention, the conductive layer 412a, the conductive layer 412b, and the conductive layer 404 used as wiring can be formed by processing different conductive films. Therefore, any conductive layer can be arranged to overlap with one or more other conductive layers, thereby increasing the degree of freedom of layout and reducing the area occupied by the circuit.

[0184] Next, the channel length and channel width of the transistor 100T are described. In the semiconductor layer 408, the region in contact with the conductive layer 412a is used as one of the source region and the drain region, the region in contact with the conductive layer 412b is used as the other of the source region and the drain region, and the region between the source region and the drain region is used as a channel formation region.

[0185] The channel length of the transistor 100T is the distance between the source region and the drain region. Figure 8BThe dotted double arrow indicates a channel length L100 of the transistor 100T. The channel length L100 is the distance between the end of the region where the semiconductor layer 408 contacts the conductive layer 412a and the end of the region where the semiconductor layer 408 contacts the conductive layer 412b in the cross section.

[0186] That is, the channel length L100 is determined by the thickness of the insulating layer 407 and the angle formed by the side surface of the opening 441 of the insulating layer 407 and the top surface of the conductive layer 412a, and is not affected by the performance of the exposure device used to manufacture the transistor. Therefore, the channel length L100 can be set to a value smaller than the limiting resolution of the exposure device, and a fine transistor can be realized.

[0187] By reducing the channel length L100, the on-state current of the transistor 100T can be increased. By using the transistor 100T, a circuit capable of high-speed operation can be manufactured. Furthermore, the transistor can be miniaturized, thereby reducing the area occupied by the circuit.

[0188] Note that Figure 8B , etc., show a structure in which the shape of the side surface of the opening 441 side of the insulating layer 407 in the cross section is a straight line, but one embodiment of the present invention is not limited to this. The shape of the side surface of the opening 441 side of the insulating layer 407 in the cross section may also be a curve, or may include both a straight line region and a curved region.

[0189] The channel width of the transistor 100T is the width of the source region or the width of the drain region in the direction perpendicular to the channel length direction. In other words, the channel width is the width of the region where the semiconductor layer 408 contacts the conductive layer 412a or the width of the region where the semiconductor layer 408 contacts the conductive layer 412b in the direction perpendicular to the channel length direction. Here, the width of the region where the semiconductor layer 408 contacts the conductive layer 412b in the direction perpendicular to the channel length direction is described as the channel width of the transistor 100T. Fig. 8A and Figure 8B A channel width W100 of the transistor 100T is indicated by a solid double-ended arrow. The channel width W100 is the length of the bottom end of the conductive layer 412 b on the opening 441 side in a plan view.

[0190] The channel width W100 is determined by the top surface shape of the opening 441. Note that when the top surface shape of the opening 441 is circular, the diameter of the opening 441 is D441 and the thickness of the conductive layer 412b can be ignored, the channel width W100 can be calculated as "D441×π".

[0191] That is, the transistor 100T can be said to be a transistor having a larger channel width relative to the occupied area. By increasing the channel width W100, the on-state current of the transistor 100T can be increased, so that a circuit capable of high-speed operation can be manufactured.

[0192] Fig.9A and Fig. 9B It is a description of Fig. 8A and Figure 8B FIG. 4 is a diagram showing an example of a structure in which a back gate is added. The conductive layer 415 used as the back gate electrode is embedded in the insulating layer 407 (insulating layers 407a, 407c), and a portion of the insulating layer 407c provided between the semiconductor layer 408 and the conductive layer 415 is used as a gate insulating layer. Alternatively, an insulating layer different from the insulating layer 407c may be used as a gate insulating layer.

[0193] The components included in the transistor 100T of this embodiment will be described below.

[0194] 〔<Components of a transistor〕 >[Semiconductor layer 408] There is no particular limitation on the semiconductor material that can be used for the semiconductor layer 408. For example, a single-material semiconductor or a compound semiconductor can be used. As a single-material semiconductor, for example, silicon or germanium can be used. As a compound semiconductor, for example, gallium arsenide and silicon germanium can be cited. As a compound semiconductor, an organic substance having semiconductor characteristics or a metal oxide having semiconductor characteristics (also referred to as an oxide semiconductor) can be used. Note that these semiconductor materials may also contain impurities as dopants.

[0195] There is no particular limitation on the crystallinity of the semiconductor material used for the semiconductor layer 408, and an amorphous semiconductor or a crystalline semiconductor (a single crystal semiconductor, a polycrystalline semiconductor, a microcrystalline semiconductor, or a semiconductor having a crystalline region in part thereof) can be used. When a crystalline semiconductor is used, degradation of transistor characteristics can be suppressed, so it is preferred.

[0196] The semiconductor layer 408 preferably includes a metal oxide (oxide semiconductor). Examples of metal oxides that can be used for the semiconductor layer 408 include indium oxide, gallium oxide, and zinc oxide. The metal oxide preferably includes at least indium (In) or zinc (Zn). In addition, the metal oxide preferably includes two or three selected from indium, element M, and zinc. Note that element M is one or more selected from gallium, aluminum, silicon, boron, yttrium, tin, antimony, copper, vanadium, beryllium, titanium, iron, nickel, germanium, zirconium, molybdenum, lanthanum, cerium, neodymium, hafnium, tantalum, tungsten, cobalt, and magnesium. In particular, element M is preferably one or more selected from aluminum, gallium, yttrium, and tin. Element M is more preferably gallium.

[0197] The semiconductor layer 408 may be made of, for example, indium oxide, indium gallium oxide (In-Ga oxide), indium zinc oxide (In-Zn oxide), indium tin oxide (In-Sn oxide), indium titanium oxide (In-Ti oxide), gallium zinc oxide (Ga-Zn oxide), indium aluminum zinc oxide (In-Al-Zn oxide, also referred to as IAZO), indium tin zinc oxide (In-Sn-Zn oxide), indium titanium zinc oxide (In-Ti-Zn oxide), indium gallium zinc oxide (In-Ga-Zn oxide, also referred to as IGZO), indium gallium tin zinc oxide (In-Ga-Sn-Zn oxide, also referred to as IGZTO), indium gallium aluminum zinc oxide (In-Ga-Al-Zn oxide, also referred to as IGAZO or IAGZO), etc. Alternatively, indium tin oxide containing silicon may be used.

[0198] Here, the composition of the metal oxide included in the semiconductor layer 408 has a great influence on the electrical characteristics and reliability of the transistor 100T. For example, by increasing the ratio of the number of indium atoms to the total number of atoms of all metal elements included in the metal oxide, a transistor with a large on-state current can be realized.

[0199] When In-Zn oxide is used as the semiconductor layer 408, it is preferable to use a metal oxide in which the atomic ratio of indium is greater than the atomic ratio of zinc. For example, a metal oxide in which the atomic ratio of the metal elements is In:Zn=1:1, In:Zn=2:1, In:Zn=3:1, In:Zn=4:1, In:Zn=5:1, In:Zn=7:1, In:Zn=10:1 or a metal oxide in the vicinity thereof can be used.

[0200] When In-Sn oxide is used as the semiconductor layer 408, it is preferable to use a metal oxide in which the atomic ratio of indium is greater than the atomic ratio of tin. For example, a metal oxide in which the atomic ratio of the metal elements is In:Sn=1:1, In:Sn=2:1, In:Sn=3:1, In:Sn=4:1, In:Sn=5:1, In:Sn=7:1, In:Sn=10:1 or a metal oxide in the vicinity thereof can be used.

[0201] When In-Sn-Zn oxide is used as the semiconductor layer 408, a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of tin can be used. Furthermore, a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of tin is preferably used. For example, the atomic ratios of the metal elements that can be used are In:Sn:Zn=2:1:3, In:Sn:Zn=3:1:2, In:Sn:Zn=4:2:3, In:Sn:Zn=4:2:4.1, In:Sn:Zn=5:1:3, In:Sn:Zn=5:1:6, In:Sn:Zn=5:1:7, In:Sn:Zn=5:1:8, In:Sn:Zn=5:1:9, In:Sn:Zn=5:1:10, In:Sn:Zn=5:1:11, In:Sn:Zn=5:1:12, In:Sn:Zn=5:1:13, In:Sn:Zn=5:1:14, In:Sn:Zn=5:1:15, In:Sn:Zn=5:1:16, In:Sn:Zn=5:1:17, In:Sn:Zn=5:1:18, In:Sn:Zn=5:1:19, In:Sn:Zn=5:1:10, In:Sn:Zn=5:1:11, In:Sn:Zn=5:1:12, In:Sn:Zn=5:1:13, In:Sn:Zn=5:1:14, In:Sn:Zn=5:1:15 n=6:1:6、In:Sn:Zn=10:1:3、In:Sn:Zn=10:1:6、In:Sn:Zn=10:1:7、In:Sn:Zn=10:1:8、In :Sn:Zn=5:2:5, In:Sn:Zn=10:1:10, In:Sn:Zn=20:1:10, In:Sn:Zn=40:1:10 or metal oxides in their vicinity.

[0202] When In-Al-Zn oxide is used as the semiconductor layer 408, a metal oxide in which the atomic ratio of indium is higher than the atomic ratio of aluminum can be used. Furthermore, a metal oxide in which the atomic ratio of zinc is higher than the atomic ratio of aluminum is preferably used. For example, the atomic ratios of the metal elements that can be used are In:Al:Zn=2:1:3, In:Al:Zn=3:1:2, In:Al:Zn=4:2:3, In:Al:Zn=4:2:4.1, In:Al:Zn=5:1:3, In:Al:Zn=5:1:6, In:Al:Zn=5:1:7, In:Al:Zn=5:1:8, In:Al:Zn=5:1:9, In:Al:Zn=5:1:10, In:Al:Zn=5:1:11, In:Al:Zn=5:1:12, In:Al:Zn=5:1:13, In:Al:Zn=5:1:14, In:Al:Zn=5:1:15, In:Al:Zn=5:1:16, In:Al:Zn=5:1:17, In:Al:Zn=5:1:18, In:Al:Zn=5:1:19, In:Al:Zn=5:1:10, In:Al:Zn=5:1:11, In:Al:Zn=5:1:12, In:Al:Zn=5:1:13, In:Al:Zn=5:1:14, In:Al:Zn=5:1:15 n=6:1:6, In:Al:Zn=10:1:3, In:Al:Zn=10:1:6, In:Al:Zn=10:1:7, In:Al:Zn=10:1:8, In:Al:Zn=5:2:5, In:Al:Zn=10:1:10, In:Al:Zn=20:1:10, In:Al:Zn=40:1:10 or metal oxides thereabouts.

[0203] When In-Ga-Zn oxide is used as the semiconductor layer 408, a metal oxide in which the atomic number ratio of indium to the sum of the atomic numbers of all metal elements contained therein is higher than that of gallium can be used. Furthermore, it is more preferable to use a metal oxide in which the atomic number ratio of zinc is higher than that of gallium. For example, the semiconductor layer 408 can use metal element atomic ratios of In:Ga:Zn=2:1:3, In:Ga:Zn=3:1:2, In:Ga:Zn=4:2:3, In:Ga:Zn=4:2:4.1, In:Ga:Zn=5:1:3, In:Ga:Zn=5:1:6, In:Ga:Zn=5:1:7, In:Ga:Zn=5:1:8, In:Ga:Zn=5:1:9, In:Ga:Zn=5:1:10, In:Ga:Zn=5:1:11, In:Ga:Zn=5:1:12, In:Ga:Zn=5:1:13, In:Ga:Zn=5:1:14, In:Ga:Zn=5:1:15, In:Ga:Zn=5:1:16, In:Ga:Zn=5:1:17, In:Ga:Zn=5:1:18, In:Ga:Zn=5:1:19, In:Ga:Zn=5:1:19, In:Ga:Zn=5:1:10, In:Ga: a:Zn=6:1:6, In:Ga:Zn=10:1:3, In:Ga:Zn=10:1:6, In:Ga:Zn=10:1:7, In:Ga:Zn=10:1:8, In:Ga:Zn=5:2:5, In:Ga:Zn=10:1:10, In:Ga:Zn=20:1:10, In:Ga:Zn=40:1:10 or metal oxides thereabouts.

[0204] When In-M-Zn oxide is used as the semiconductor layer 408, a metal oxide in which the atomic number ratio of indium relative to the sum of the atomic numbers of all metal elements contained is higher than the atomic number ratio of element M can be used. Furthermore, it is more preferable to use a metal oxide in which the atomic number ratio of zinc is higher than the atomic number ratio of element M. For example, the semiconductor layer 408 can use metal element atomic ratios of In:M:Zn=2:1:3, In:M:Zn=3:1:2, In:M:Zn=4:2:3, In:M:Zn=4:2:4.1, In:M:Zn=5:1:3, In:M:Zn=5:1:6, In:M:Zn=5:1:7, In:M:Zn=5:1:8, In: M:Zn=6:1:6, In:M:Zn=10:1:3, In:M:Zn=10:1:6, In:M:Zn=10:1:7, In:M:Zn=10:1:8, In:M:Zn=5:2:5, In:M:Zn=10:1:10, In:M:Zn=20:1:10, In:M:Zn=40:1:10 or metal oxides thereabouts.

[0205] By increasing the indium content of the metal oxide, a transistor with a large on-state current can be realized. By using this transistor for a transistor requiring a large on-state current, a circuit with excellent electrical characteristics can be formed.

[0206] The composition of metal oxides can be analyzed, for example, using energy dispersive X-ray analysis (EDX: Energy Dispersive X-ray Spectrometry), X-ray photoelectron spectroscopy (XPS: X-ray Photoelectron Spectrometry), inductively coupled plasma mass spectrometry (ICP-MS: Inductively Coupled Plasma-Mass Spectrometry) or inductively coupled plasma atomic emission spectrometry (ICP-AES: Inductively Coupled Plasma-Atomic Emission Spectrometry). Alternatively, multiple of the above methods can be combined for analysis. Note that the actual content of elements with low content is sometimes different from the content obtained by analysis due to the influence of analysis accuracy. For example, when the content of element M is low, the content of element M obtained by analysis is sometimes lower than the actual content.

[0207] In this specification, etc., the nearby composition includes a range of ±30% of the desired atomic number ratio. For example, when the atomic number ratio is described as In:M:Zn=4:2:3 or a composition nearby, the following cases are included: when the atomic number ratio of indium is 4, the atomic number ratio of M is greater than 1 and less than 3, and the atomic number ratio of zinc is greater than 2 and less than 4. In addition, when the atomic number ratio is described as In:M:Zn=5:1:6 or a composition nearby, the following cases are included: when the atomic number ratio of indium is 5, the atomic number ratio of M is greater than 0.1 and less than 2, and the atomic number ratio of zinc is greater than 5 and less than 7. In addition, when the atomic number ratio is described as In:M:Zn=1:1:1 or a composition nearby, the following cases are included: when the atomic number ratio of indium is 1, the atomic number ratio of M is greater than 0.1 and less than 2, and the atomic number ratio of zinc is greater than 0.1 and less than 2.

[0208] The metal oxide can be formed by sputtering or atomic layer deposition (ALD) as appropriate. Note that when the metal oxide is formed by sputtering, the atomic number ratio of the target material is sometimes different from the atomic number ratio of the metal oxide. In particular, the atomic number ratio of zinc in the metal oxide is sometimes smaller than the atomic number ratio of zinc in the target material. Specifically, the atomic number ratio of zinc is sometimes about 40% or more and 90% or less of the atomic number ratio of zinc in the target material.

[0209] The semiconductor layer 408 may also have a stacked structure including two or more metal oxide layers. The compositions of the two or more metal oxide layers included in the semiconductor layer 408 may also be the same or substantially the same as each other. By adopting a stacked structure of metal oxide layers with the same composition, for example, the same sputtering target can be used to form them, thereby reducing the manufacturing cost.

[0210] The compositions of the two or more metal oxide layers included in the semiconductor layer 408 may also be different from each other. For example, a stacked structure of a first metal oxide layer having a composition of In:M:Zn=1:3:4 [atomic ratio] or a composition close thereto and a second metal oxide layer having a composition of In:M:Zn=1:1:1 [atomic ratio] or a composition close thereto disposed on the first metal oxide layer may be appropriately used. In addition, gallium or aluminum is particularly preferably used as the element M. For example, a stacked structure of any one selected from indium oxide, indium gallium oxide, and IGZO and any one selected from IAZO, IAGZO, and ITZO (registered trademark) may be used.

[0211] A crystalline metal oxide layer is preferably used as the semiconductor layer 408. For example, a metal oxide layer having a CAAC (c-axis aligned crystal) structure, a polycrystalline structure, a microcrystalline (nc: nano-crystal) structure, or the like can be used. By using a crystalline metal oxide layer for the semiconductor layer 408, the defect state density in the semiconductor layer 408 can be reduced, thereby realizing a highly reliable transistor.

[0212] The higher the crystallinity of the metal oxide layer used for the semiconductor layer 408, the lower the defect state density in the semiconductor layer 408. On the other hand, by using a metal oxide layer with low crystallinity, a transistor capable of passing a large current can be realized.

[0213] The semiconductor layer 408 may also have a stacked structure of two or more metal oxide layers with different crystallinity. For example, a stacked structure may have a first metal oxide layer and a second metal oxide layer disposed on the first metal oxide layer, and the second metal oxide layer may include a region whose crystallinity is higher than that of the first metal oxide layer. Alternatively, the second metal oxide layer may include a region whose crystallinity is lower than that of the first metal oxide layer. The compositions of the two or more metal oxide layers included in the semiconductor layer 408 may also be the same or substantially the same as each other. By adopting a stacked structure of metal oxide layers with the same composition, for example, the same sputtering target can be used to form them, thereby reducing manufacturing costs. For example, by using the same sputtering target to make the oxygen flow ratio different, a stacked structure of two or more metal oxide layers with different crystallinity can be formed. Note that the compositions of the two or more metal oxide layers included in the semiconductor layer 408 may also be different from each other.

[0214] When an oxide semiconductor is used as the semiconductor layer 408, the carrier concentration of the oxide semiconductor in a region serving as a channel formation region is preferably 1×10 18 cm -3 Below, more preferably below 1×10 17 cm -3 , more preferably less than 1×10 16 cm -3 , more preferably less than 1×10 13 cm -3 , and more preferably less than 1×10 12 cm -3 The lower limit of the carrier concentration of the oxide semiconductor in the region serving as the channel formation region is not particularly limited, and can be set to 1×10 -9 cm -3 .

[0215] Compared with transistors using amorphous silicon, transistors using oxide semiconductors (hereinafter referred to as OS transistors) have very high field effect mobility. In addition, the leakage current between the source and the drain in the off state of the OS transistor (hereinafter also referred to as the off-state current) is extremely small, and the charge stored in the capacitor connected in series with the transistor can be maintained for a long time. In addition, by using OS transistors, the power consumption of semiconductor devices can be reduced.

[0216] [Insulation layer 407] When an oxide semiconductor is used for the semiconductor layer 408, an inorganic insulating material can be used as appropriate for the insulating layer 407 (the insulating layer 407a, the insulating layer 407b, and the insulating layer 407c). Alternatively, the insulating layer 407 may have a stacked-layer structure of an inorganic insulating material and an organic insulating material.

[0217] As the inorganic insulating material, one or more of oxide, oxynitride, oxynitride and nitride can be used. For example, the insulating layer 407 can use one or more of silicon oxide, silicon oxynitride, aluminum oxide, hafnium oxide, yttrium oxide, zirconium oxide, gallium oxide, tantalum oxide, magnesium oxide, lanthanum oxide, cerium oxide, neodymium oxide, silicon nitride, silicon oxynitride and aluminum nitride.

[0218] Note that in this specification and the like, oxynitride refers to a material containing more oxygen than nitrogen in its composition. Nitride oxide refers to a material containing more nitrogen than oxygen in its composition. For example, silicon oxynitride refers to a material containing more oxygen than nitrogen in its composition, and silicon nitride oxide refers to a material containing more nitrogen than oxygen in its composition.

[0219] The insulating layer 407b is preferably made of oxide or oxynitride. The insulating layer 407b is preferably made of a film that releases oxygen by heating. For example, silicon oxide or silicon oxynitride can be used for the insulating layer 407b.

[0220] Oxygen is released by the insulating layer 407b, and oxygen can be supplied from the insulating layer 407b to the semiconductor layer 408. By supplying oxygen from the insulating layer 407b to the semiconductor layer 408, especially to a channel formation region of the semiconductor layer 408, oxygen vacancies (V O ) and V O H (hydrogen enters the defect in the oxygen vacancy), a transistor with good electrical characteristics and high reliability can be realized. The insulating layer 407b preferably has a high oxygen diffusion coefficient. By increasing the oxygen diffusion coefficient of the insulating layer 407b, oxygen can be easily diffused into the insulating layer 407b, and oxygen can be efficiently supplied from the insulating layer 407b to the semiconductor layer 408. Note that as a process for supplying oxygen to the semiconductor layer 408, there is also a heat treatment in an oxygen-containing atmosphere or a plasma treatment in an oxygen-containing atmosphere.

[0221] The oxygen vacancies (V O ) and V O H is preferably small. In particular, when the channel length L100 is short, the oxygen vacancies (V O ) and V O H has a greater impact on electrical characteristics and reliability. For example, sometimes V O H diffuses from the source region or the drain region to the channel formation region, increasing the carrier concentration in the channel formation region, thereby causing the threshold voltage of the transistor 100T to vary or the reliability to decrease. The shorter the channel length L100 of the transistor 100T, the greater the V O The greater the effect of H diffusion on electrical characteristics and reliability. By supplying oxygen from the insulating layer 407b to the semiconductor layer 408, especially to the channel formation region of the semiconductor layer 408, oxygen vacancies (V O ) and V O H. Therefore, a short-channel transistor having good electrical characteristics and high reliability can be realized.

[0222] The insulating layer 407a and the insulating layer 407c are each preferably not easily permeable to oxygen. The insulating layer 407a and the insulating layer 407c are used as a barrier film for suppressing the separation of oxygen from the insulating layer 407b. Furthermore, the insulating layer 407a and the insulating layer 407c are each preferably not easily permeable to hydrogen. The insulating layer 407a and the insulating layer 407c are used as a barrier film for suppressing the diffusion of hydrogen from the outside of the transistor through the insulating layer 407 to the semiconductor layer 408. The film density of the insulating layer 407a and the insulating layer 407c is preferably high. By increasing the film density of the insulating layer 407a and the insulating layer 407c, the barrier property of oxygen and hydrogen can be improved. The film density of the insulating layer 407a and the insulating layer 407c is each preferably higher than the film density of the insulating layer 407b. In the case of using silicon oxide or silicon oxynitride for the insulating layer 407b, the insulating layer 407a and the insulating layer 407c can use silicon nitride, silicon nitride oxide, or aluminum oxide as appropriate. The insulating layer 407a and the insulating layer 407c each preferably include a region containing more nitrogen than the insulating layer 407b. The insulating layer 407a and the insulating layer 407c each can use a material containing more nitrogen than the insulating layer 407b. The insulating layer 407a and the insulating layer 407c each preferably use a nitride or a nitride oxide. The insulating layer 407a and the insulating layer 407c each can use silicon nitride or silicon nitride oxide, for example.

[0223] When oxygen included in the insulating layer 407b diffuses upward from a region of the insulating layer 407b that is not in contact with the semiconductor layer 408 (for example, the top surface of the insulating layer 407b), the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 may decrease. By providing the insulating layer 407c on the insulating layer 407b, diffusion of oxygen included in the insulating layer 407b from a region of the insulating layer 407 that is not in contact with the semiconductor layer 408 can be suppressed. Similarly, by providing the insulating layer 407a under the insulating layer 407b, diffusion of oxygen from a region of the insulating layer 407 that is not in contact with the semiconductor layer 408 to the bottom can be suppressed. Therefore, the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 is increased, and thus oxygen vacancies (V O ) and V O H. Therefore, a transistor having good electrical characteristics and high reliability can be realized.

[0224] Sometimes, the conductive layer 412a and the conductive layer 412b are oxidized due to oxygen contained in the insulating layer 407b, so that the resistance becomes higher. In addition, the conductive layer 412a and the conductive layer 412b are oxidized due to oxygen contained in the insulating layer 407b, and sometimes the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 becomes less. By providing the insulating layer 407a between the insulating layer 407b and the conductive layer 412a, it is possible to suppress the conductive layer 412a from being oxidized and the resistance from becoming higher. Similarly, by providing the insulating layer 407c between the insulating layer 407b and the conductive layer 412b, it is possible to suppress the conductive layer 412b from being oxidized and the resistance from becoming higher. At the same time, the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 is increased, and the oxygen vacancies (V O ) and V O H, thereby achieving a transistor with good electrical characteristics and high reliability.

[0225] When hydrogen diffuses into the semiconductor layer 408, it reacts with oxygen atoms contained in the oxide semiconductor to form water, and oxygen vacancies (V O ). Furthermore, V O H, sometimes the carrier concentration becomes high. By providing the insulating layer 407a and the insulating layer 407c, the oxygen vacancies (V O ) and V O H, thereby achieving a transistor with good electrical characteristics and high reliability.

[0226] The insulating layer 407a and the insulating layer 407c preferably have a thickness that can be used as a barrier film for oxygen and hydrogen. When the thickness of the insulating layer 407a and the insulating layer 407c is small, the function as a barrier film may be reduced. On the other hand, when the thickness of the insulating layer 407a and the insulating layer 407c is large, the region of the semiconductor layer 408 in contact with the insulating layer 407b becomes narrower, and the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 may decrease. The thickness of the insulating layer 407a and the insulating layer 407c may be smaller than the thickness of the insulating layer 407b.

[0227] In the transistor 100T, oxygen is supplied from the insulating layer 407 to the semiconductor layer 408, whereby oxygen vacancies (V O ) and V O H. Therefore, a transistor having good electrical characteristics and high reliability can be realized.

[0228] In addition, either or both of the insulating layer 407a and the insulating layer 407c may not be provided.

[0229] [Conductive layer 412a, conductive layer 412b, conductive layer 404e, and conductive layer 415] The conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 used as the source electrode, the drain electrode, or the gate electrode can be formed using one or more of chromium, copper, aluminum, gold, silver, zinc, tantalum, titanium, tungsten, manganese, nickel, iron, cobalt, molybdenum, and niobium, or an alloy containing one or more of the above metals. The conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 can appropriately use a low-resistance conductive material containing one or more of copper, silver, gold, and aluminum. Among them, copper or aluminum is particularly advantageous in mass production and is therefore preferred.

[0230] A metal oxide film (also referred to as an oxide conductor (OC)) can be used for each of the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415. Examples of the oxide conductor include In-Sn oxide (ITO), In-W oxide, In-W-Zn oxide, In-Ti oxide, In-Ti-Sn oxide, In-Zn oxide, In-Sn-Si oxide (ITSO), and In-Ga-Zn oxide.

[0231] Here, an oxide conductor (OC) is described. For example, oxygen vacancies are formed in a metal oxide having semiconductor properties, and hydrogen is added to the oxygen vacancies to form a donor energy level near the conduction band. As a result, the conductivity of the metal oxide increases, and it becomes a conductor. A metal oxide that can become a conductor is called an oxide conductor.

[0232] The conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 may have a stacked-layer structure of a conductive film containing the above-mentioned oxide conductor (metal oxide) and a conductive film containing a metal or an alloy. By using a conductive film containing a metal or an alloy, wiring resistance can be reduced.

[0233] A Cu-X alloy film (X is Mn, Ni, Cr, Fe, Co, Mo, Ta, or Ti) may be applied to each of the conductive layers 412a, 412b, 404e, and 415. By using the Cu-X alloy film, processing can be performed by a wet etching process, thereby reducing manufacturing costs.

[0234] Note that the conductive layer 412a, the conductive layer 412b, the conductive layer 404e, and the conductive layer 415 can use the same material or different materials from each other.

[0235] Here, taking a structure in which a metal oxide is used as the semiconductor layer 408 as an example, the conductive layer 412a and the conductive layer 412b are specifically described.

[0236] When an oxide semiconductor is used as the semiconductor layer 408, the conductive layer 412a and the conductive layer 412b are oxidized by oxygen contained in the semiconductor layer 408, and the resistance may be increased. The conductive layer 412a and the conductive layer 412b are oxidized by oxygen contained in the insulating layer 407b, and the resistance may be increased. The conductive layer 412a and the conductive layer 412b are oxidized by oxygen contained in the semiconductor layer 408, and the oxygen vacancies (V O The conductive layer 412a and the conductive layer 412b are oxidized by oxygen contained in the insulating layer 407b, and the amount of oxygen supplied from the insulating layer 407b to the semiconductor layer 408 is sometimes reduced.

[0237] The conductive layer 412a and the conductive layer 412b are preferably made of materials that are not easily oxidized. The conductive layer 412a and the conductive layer 412b are preferably made of oxide conductors. For example, In-Sn oxide (ITO) or In-Sn-Si oxide (ITSO) can be used appropriately. A nitride conductor can also be used for the conductive layer 412a. Examples of nitride conductors include tantalum nitride and titanium nitride. The conductive layer 412a can also have a stacked structure of the above materials.

[0238] By using a material that is not easily oxidized for the conductive layer 412a and the conductive layer 412b, an increase in resistance due to oxidation of oxygen contained in the semiconductor layer 408 or oxygen contained in the insulating layer 407b can be suppressed. O ) is suppressed while the amount of oxygen supplied from the insulating layer 407 b to the semiconductor layer 408 is increased. Therefore, the oxygen vacancies (V O ) and V O H, thereby achieving a transistor having good electrical characteristics and high reliability.

[0239] Similarly, by using a material that is not easily oxidized for the conductive layer 412b, an increase in resistance can be suppressed. Note that the conductive layer 412a and the conductive layer 412b may be made of the same material or different materials.

[0240] The conductive layer 412b includes a region in contact with the transistor 100T. By using a material that is not easily oxidized for the conductive layer 412b, oxygen vacancies (V O ) and V O H.

[0241] As described above, as the conductive layer 412a and the conductive layer 412b in contact with the semiconductor layer 408, it is preferable to use a material that is not easily oxidized. However, when a material that is not easily oxidized is used, the resistance sometimes increases. It is preferable that the conductive layer 412a and the conductive layer 412b have a low resistance because they are used as wiring. Therefore, by using a material that is not easily oxidized for the conductive layer 412a_1 including the area in contact with the semiconductor layer 408 and using a low-resistance material for the conductive layer 412a_2 in the area not in contact with the semiconductor layer 408, the resistance of the conductive layer 412a can be reduced. Furthermore, the oxygen vacancies (V O ) and V O H, thereby achieving a transistor with good electrical characteristics and high reliability.

[0242] As described above, especially when the channel length L100 is short, the oxygen vacancies (V O ) and V O H has a greater influence on electrical characteristics and reliability. By using a material that is not easily oxidized for the conductive layer 412a_1, oxygen vacancies (V O ) and V O H increases. Therefore, a short-channel transistor having good electrical characteristics and high reliability can be realized.

[0243] As the conductive layer 412a_1, one or more of an oxide conductor and a nitride conductor can be used appropriately. As the conductive layer 412a_2, it is preferable to use a material whose resistance is lower than that of the conductive layer 412a_1. As the conductive layer 412a_2, for example, one or more of copper, aluminum, titanium, tungsten, and molybdenum or an alloy containing one or more of the above metals as components can be used appropriately. Specifically, it is preferable to use In-Sn-Si oxide (ITSO) for the conductive layer 412a_1 and tungsten for the conductive layer 412a_2.

[0244] In addition, the structure of the conductive layer 412a can be determined according to the wiring resistance required for the conductive layer 412a. For example, when the length of the wiring (conductive layer 412a) is short and the required wiring resistance is relatively high, the conductive layer 412a can have a single-layer structure and a material that is not easily oxidized can be used. On the other hand, when the length of the wiring (conductive layer 412a) is long and the required wiring resistance is relatively low, the conductive layer 412a preferably has a laminated structure of a material that is not easily oxidized and a low-resistance material.

[0245] Furthermore, the structure of the conductive layer 412a may be applied to other conductive layers.

[0246] [Insulation layer 406] The defect density of the insulating layer 406 used as a gate insulating layer is preferably low. When the defect density of the insulating layer 406 is low, a transistor having good electrical characteristics can be realized. Furthermore, the insulating layer 406 preferably has a high dielectric strength voltage. Since the dielectric strength voltage of the insulating layer 406 is high, a transistor with high reliability can be formed.

[0247] The insulating layer 406 may be made of, for example, one or more of an oxide, an oxynitride, an oxynitride, and a nitride having insulating properties. The insulating layer 406 may be made of, for example, one or more of silicon oxide, silicon oxynitride, silicon nitride oxide, silicon nitride, aluminum oxide, aluminum oxynitride, aluminum nitride oxide, aluminum nitride, hafnium oxide, hafnium oxynitride, gallium oxide, gallium oxynitride, yttrium oxide, yttrium oxynitride, and Ga-Zn oxide. The insulating layer 406 may also be a single layer or a stacked layer. The insulating layer 406 may also have, for example, a stacked layer structure of an oxide and a nitride.

[0248] Note that in a fine transistor, when the thickness of the gate insulating layer is small, the leakage current sometimes increases. By using a material with a high relative dielectric constant (also called a high-k material) for the gate insulating layer, it is possible to achieve a low voltage when the transistor is operating while maintaining the physical thickness. Examples of high-k materials include gallium oxide, hafnium oxide, zirconium oxide, oxides containing aluminum and hafnium, oxynitrides containing aluminum and hafnium, oxides containing silicon and hafnium, oxynitrides containing silicon and hafnium, or nitrides containing silicon and hafnium.

[0249] It is preferable that a small amount of impurities (for example, water and hydrogen) is released from the insulating layer 406 itself. Since a small amount of impurities is released from the insulating layer 406, diffusion of impurities into the semiconductor layer 408 can be suppressed, thereby achieving a transistor having good electrical characteristics and high reliability.

[0250] Here, the insulating layer 406 is specifically described by taking a structure in which the semiconductor layer 408 is made of metal oxide as an example.

[0251] In order to improve the interface characteristics between the insulating layer 406 and the semiconductor layer 408, an oxide is preferably used for at least one side of the insulating layer 406 that is in contact with the semiconductor layer 408. For example, one or more of silicon oxide and silicon oxynitride can be used for the insulating layer 406. In addition, the insulating layer 406 is preferably made of a film that releases oxygen by heating.

[0252] Note that the insulating layer 406 may have a stacked-layer structure. The insulating layer 406 may have a stacked-layer structure of an oxide film in contact with the semiconductor layer 408 side and a nitride film in contact with the conductive layer 404e side. As the oxide film, for example, one or more of silicon oxide and silicon oxynitride can be appropriately used. As the nitride film, silicon nitride can be appropriately used.

[0253] [Substrate 402] Although there is no particular limitation on the material of the substrate 402, it is at least necessary to have heat resistance sufficient to withstand subsequent heat treatment. For example, a single crystal semiconductor substrate or polycrystalline semiconductor substrate made of silicon or silicon carbide, a compound semiconductor substrate such as silicon germanium, an SOI substrate, a glass substrate, a quartz substrate, a sapphire substrate, a ceramic substrate, or an organic resin substrate can be used as the substrate 402. In addition, a substrate in which a semiconductor element is provided on the above substrate can also be used as the substrate 402. Note that the shape of the semiconductor substrate and the insulating substrate can be circular or angular.

[0254] As the substrate 402, a flexible substrate may be used, and the transistor 100T or the like may be directly formed on the flexible substrate. Alternatively, a peeling layer may be provided between the substrate 402 and the transistor 100T or the like. The peeling layer may be used when a part or all of a semiconductor device is manufactured on the peeling layer, and then separated from the substrate 402 and transferred to another substrate. In this case, the transistor 100T or the like may also be transferred to a substrate with low heat resistance or a flexible substrate.

[0255] The above is the description of the components of the transistor 100T.

[0256] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0257] (Implementation 3) In this embodiment, a display device which is one embodiment of the present invention is described.

[0258] FIG. 10A to FIG. 10C A cross-sectional view showing a display device 100 which is a display device according to one embodiment of the present invention.

[0259] FIG. 10A to FIG. 10C Show Figure 1 The display device 100 shown is an example of a cross-section of a portion of an area including FPC 118, a portion of an area including a driving circuit 112, a portion of an area including a driving circuit 113, a portion of an area including a display portion 111, a portion of an area including a driving circuit 114, and a portion of an area including FPC 119.

[0260] Fig. 10A The display device 100 shown includes a transistor 201, a transistor 202, a transistor 203, a transistor 204, a transistor 205, a light-emitting device 90G emitting green light, a light-emitting device 90B emitting blue light, a sensor electrode 130X, a sensor electrode 130Y, etc. between a substrate 110 and a substrate 140.

[0261] The light emitting device 90G includes a conductive layer 142a, a conductive layer 146a on the conductive layer 142a, and a conductive layer 149a on the conductive layer 146a. The conductive layers 142a, 146a, and 149a may all be referred to as pixel electrodes, or a portion of the conductive layers 142a, 146a, and 149a may be referred to as pixel electrodes.

[0262] The light emitting device 90G includes a conductive layer 142b, a conductive layer 146b on the conductive layer 142b, and a conductive layer 149b on the conductive layer 146b.

[0263] The conductive layer 142a is connected to the conductive layer 222b included in the transistor 203 through an opening provided in the insulating layer 214. The end of the conductive layer 146a is located outside the end of the conductive layer 142a. The end of the conductive layer 146a is consistent with or substantially consistent with the end of the conductive layer 149a. For example, a conductive layer used as a reflective electrode is used as the conductive layer 142a and the conductive layer 146a, and a conductive layer used as a transparent electrode is used as the conductive layer 149a.

[0264] The conductive layers 142b, 146b, and 149b in the light emitting device 90B are the same as the conductive layers 142a, 146a, and 149a in the light emitting device 90G, and thus detailed description thereof will be omitted.

[0265] A recessed portion is formed in the conductive layers 142a and 142b so as to cover the opening provided in the insulating layer 214. The recessed portion is filled with the layer 148.

[0266] The layer 148 has the function of flattening the concave portions of the conductive layers 142a and 142b. Conductive layers 146a and 146b electrically connected to the conductive layers 142a and 142b are provided on the conductive layers 142a and 142b and the layer 148. Therefore, the region overlapping the concave portions of the conductive layers 142a and 142b can also be used as a light emitting region or a light receiving region, thereby increasing the aperture ratio of the pixel.

[0267] Layer 148 may be an insulating layer or a conductive layer. Layer 148 may be formed of various inorganic insulating materials, organic insulating materials, and conductive materials as appropriate. In particular, layer 148 is preferably formed of an insulating material, and is particularly preferably formed of an organic insulating material. For example, an organic insulating material that can be used for the above-mentioned resin layer 326 may be used as layer 148.

[0268] A protective layer 321 is disposed on the light emitting devices 90G and 90B. A solid sealing layer 150 is disposed on the protective layer 321 to protect the light emitting devices.

[0269] The display device 100 adopts top emission. The light emitting device emits light to the substrate 140 side. The substrate 140 is preferably made of a material with high transmittance to visible light. The pixel electrode includes a material that reflects visible light, and the counter electrode (common electrode 313) includes a material that transmits visible light.

[0270] The transistors 201 to 205 are all provided over the substrate 110. The transistor 203 and the transistor 204 can be formed using the same material and the same process. Alternatively, the transistor 201, the transistor 202, and the transistor 205 can be formed using the same material and the same process.

[0271] Vertical transistors can be used for the transistor 201, the transistor 202, and the transistor 205. For details of the vertical transistors, refer to Embodiment 2.

[0272] Note that Fig.11 As shown in FIG. 1 , vertical transistors may be used as the transistor 203 and the transistor 204 included in the display portion 111 .

[0273] An insulating layer 211, an insulating layer 213, an insulating layer 215, and an insulating layer 214 are sequentially provided on the substrate 110. A portion of the insulating layer 211 is used as a gate insulating layer of each transistor. A portion of the insulating layer 213 is used as a gate insulating layer of each transistor. The insulating layer 215 is provided in a manner covering the transistor. The insulating layer 214 is provided in a manner covering the transistor and is used as a planarization layer. In addition, there is no particular limitation on the number of gate insulating layers and the number of insulating layers covering the transistor, and it can be one or more than two.

[0274] Preferably, a material that is not easy to diffuse impurities such as water and hydrogen is used for at least one of the insulating layers covering the transistor. Thus, the insulating layer can be used as a barrier layer. By adopting this structure, it is possible to effectively suppress the diffusion of impurities from the outside into the transistor, thereby improving the reliability of the display device.

[0275] Inorganic insulating films are preferably used as the insulating layer 211, the insulating layer 213, and the insulating layer 215. As the inorganic insulating film, for example, a silicon nitride film, a silicon oxynitride film, a silicon oxide film, a silicon nitride oxide film, an aluminum oxide film, an aluminum nitride film, or the like can be used. In addition, a hafnium oxide film, an yttrium oxide film, a zirconium oxide film, a gallium oxide film, a tantalum oxide film, a magnesium oxide film, a lanthanum oxide film, a cerium oxide film, a neodymium oxide film, or the like can also be used. In addition, two or more of the above insulating films can also be stacked.

[0276] The insulating layer 214 used as a planarization layer preferably uses an organic insulating layer. As materials that can be used for the organic insulating layer, for example, acrylic resins, polyimide resins, epoxy resins, polyamide resins, polyimide amide resins, siloxane resins, benzocyclobutene resins, phenolic resins, and precursors of the above resins can be used. In addition, the insulating layer 214 may also have a stacked structure of an organic insulating layer and an inorganic insulating layer. The outermost surface layer of the insulating layer 214 is preferably used as an etching protection layer. Thus, when processing the conductive layer 142a, the conductive layer 146a, or the conductive layer 149a, etc., it is possible to suppress the formation of a recess in the insulating layer 214. Alternatively, a recess may be provided in the insulating layer 214 when processing the conductive layer 142a, the conductive layer 146a, or the conductive layer 149a.

[0277] The transistor 202 and the transistor 203 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a gate insulating layer; a conductive layer 222a and a conductive layer 222b used as a source and a drain; a semiconductor layer 231; an insulating layer 213 used as a gate insulating layer; and a conductive layer 223 used as a gate. Here, a plurality of layers obtained by processing the same conductive film are given the same hatching. The insulating layer 211 is located between the conductive layer 221 and the semiconductor layer 231. The insulating layer 213 is located between the conductive layer 223 and the semiconductor layer 231.

[0278] There is no particular limitation on the structure of the transistor included in the display device of this embodiment. For example, a vertical transistor, a planar transistor, a fin-type transistor, a staggered transistor, or an inversely staggered transistor may be used. In addition, a top-gate or bottom-gate transistor structure may be used. In addition, the gate may be provided on only one of the upper and lower sides of the semiconductor layer forming the channel, not limited thereto.

[0279] As transistor 202 and transistor 203, a structure in which two gates sandwich a semiconductor layer forming a channel is adopted. Alternatively, two gates may be connected and the same signal may be supplied to the two gates to drive the transistor. Alternatively, the transistor may be driven by applying a potential for controlling a threshold voltage to one of the two gates and applying a potential for driving to the other.

[0280] There is no particular restriction on the crystallinity of the semiconductor material used for the transistor, and an amorphous semiconductor, a single crystal semiconductor, or a semiconductor other than a single crystal semiconductor having crystallinity (a microcrystalline semiconductor, a polycrystalline semiconductor, or a semiconductor having a crystallized region in part thereof) can be used. When a single crystal semiconductor or a semiconductor having crystallinity is used, it is preferred because it can suppress the degradation of the characteristics of the transistor.

[0281] The semiconductor layer of the transistor preferably uses a metal oxide (also referred to as an oxide semiconductor). That is, the display device of this embodiment preferably uses an OS transistor including a metal oxide in a channel formation region. For metal oxides that can be used for the OS transistor, refer to the description in Embodiment 2.

[0282] All transistors included in the display device 100 may be OS transistors. Alternatively, all transistors included in the display device 100 may be Si transistors. Alternatively, some transistors included in the display device 100 may be OS transistors and the rest may be Si transistors.

[0283] Alternatively, a structure in which an OS transistor is provided on a Si transistor may be adopted. Alternatively, a structure in which OS transistors are stacked may be adopted.

[0284] Examples of silicon include single crystal silicon, polycrystalline silicon, and amorphous silicon. In particular, transistors containing low temperature polycrystalline silicon (LTPS (Low Temperature Poly Silicon)) in a semiconductor layer (hereinafter also referred to as LTPS transistors) can be used. LTPS transistors have high field effect mobility and good frequency characteristics.

[0285] By using Si transistors such as LTPS transistors, a circuit that needs to be driven at a high frequency (e.g., a source driver) and a display unit can be formed on the same substrate. Therefore, the external circuit mounted on the display device can be simplified, and the component cost and mounting cost can be reduced.

[0286] For example, by using both LTPS transistors and OS transistors in the display unit 111, a display device with low power consumption and high driving capability can be realized. In addition, a structure combining LTPS transistors and OS transistors is sometimes referred to as LTPO. As a more preferred example, a structure in which an OS transistor is used as a transistor used as a switch for controlling conduction / non-conduction between wirings and an LTPS transistor is used as a transistor for controlling current can be cited.

[0287] For example, one of the transistors included in the display unit 111 is used as a transistor for controlling the current flowing through the light-emitting device and can be referred to as a driving transistor. One of the source and drain of the driving transistor is electrically connected to the pixel electrode of the light-emitting device. An LTPS transistor is preferably used as the driving transistor. Therefore, the current flowing through the light-emitting device in the pixel circuit can be increased.

[0288] On the other hand, one of the other transistors included in the display unit 111 is used as a switch function for controlling the selection and non-selection of pixels, and may also be referred to as a selection transistor. The gate of the selection transistor is electrically connected to the gate line, and one of the source and the drain is electrically connected to the source line (signal line). The selection transistor is preferably an OS transistor. Therefore, even if the frame rate is significantly reduced (for example, below 1fps), the grayscale of the pixel can be maintained, thereby reducing power consumption by stopping the driver when displaying a static image.

[0289] In this way, a display device according to one embodiment of the present invention can have high aperture ratio, high definition, high display quality, and low power consumption.

[0290] A display device according to one embodiment of the present invention has a structure including an OS transistor and a light-emitting device having an MML (Metal Mask Less) structure. By adopting this structure, the leakage current that can flow through the transistor and the leakage current that can flow between adjacent light-emitting devices (also called lateral leakage current, side leakage current, etc.) can be made extremely low. In addition, by adopting the above structure, when the image is displayed on the display device, the viewer can observe any one or more of the image's sharpness, image sharpness, high color saturation, and high contrast. In addition, by adopting a structure in which the leakage current that can flow through the transistor and the lateral leakage current between the light-emitting devices are extremely low, a display with very little light leakage (so-called black blur) that can occur when displaying black can be performed.

[0291] In particular, when the above-mentioned SBS structure is adopted in the light-emitting device of the MML structure, the layer arranged between the light-emitting devices (for example, the organic layer commonly used in the light-emitting devices, also called the common layer) is disconnected, thereby enabling a display with no side leakage or very little side leakage.

[0292] Fig. 10B and Fig. 10C Other structural examples of transistors that can be used for the transistor 203 and the transistor 204 are shown.

[0293] The transistor 209 and the transistor 210 include: a conductive layer 221 used as a gate; an insulating layer 211 used as a gate insulating layer; a semiconductor layer 231 including a channel formation region 231i and a pair of low resistance regions 231n; a conductive layer 222a connected to one of the pair of low resistance regions 231n; a conductive layer 222b connected to the other of the pair of low resistance regions 231n; an insulating layer 225 used as a gate insulating layer; a conductive layer 223 used as a gate; and an insulating layer 215 covering the conductive layer 223. The insulating layer 211 is located between the conductive layer 221 and the channel formation region 231i. The insulating layer 225 is located at least between the conductive layer 223 and the channel formation region 231i. Furthermore, an insulating layer 218 covering the transistor may be provided.

[0294] exist Fig. 10B In the illustrated example, in the transistor 209, the insulating layer 225 covers the top surface and the side surface of the semiconductor layer 231. The conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through openings provided in the insulating layer 225 and the insulating layer 215. One of the conductive layer 222a and the conductive layer 222b is used as a source, and the other is used as a drain.

[0295] On the other hand, Fig. 10C In the transistor 210 shown in the figure, the insulating layer 225 overlaps with the channel formation region 231i of the semiconductor layer 231 but does not overlap with the low resistance region 231n. For example, by processing the insulating layer 225 using the conductive layer 223 as a mask, a Fig. 10C The structure shown. Fig. 10C In the embodiment, the insulating layer 215 covers the insulating layer 225 and the conductive layer 223, and the conductive layer 222a and the conductive layer 222b are connected to the low resistance region 231n through the openings of the insulating layer 215, respectively.

[0296] A connection portion 230 is provided in a region of the substrate 110 that does not overlap with the substrate 140. In the connection portion 230, the wiring 165 is electrically connected to the FPC 118 through the conductive layer 166 and the connection layer 242. The conductive layer 166 shows an example of a laminated structure having a conductive film processed by the same conductive film as the conductive layers 142a and 142b, a conductive film processed by the same conductive film as the conductive layers 146a and 146b, and a conductive film processed by the same conductive film as the conductive layers 149a and 149b. The conductive layer 166 is exposed on the top surface of the connection portion 230. Therefore, the connection portion 230 can be electrically connected to the FPC 118 through the connection layer 242.

[0297] As the connection layer 242 , an anisotropic conductive film (ACF: Anisotropic Conductive Film), anisotropic conductive paste (ACP: Anisotropic Conductive Paste), or the like can be used.

[0298] Note that the connection portion 232 electrically connected to the FPC 119 may also have the same structure as described above.

[0299] One of the sensor electrode 130X and the sensor electrode 130Y used as an electrode of the touch sensor is provided on the solid sealing layer 150 . The other of the sensor electrode 130X and the sensor electrode 130Y is provided via the insulating layer 328 .

[0300] Note that a structure may be adopted in which the sensor electrode 130X and the sensor electrode 130Y are formed on the solid sealing layer 150 , and the insulating layer 328 is provided between the sensor electrode 130X and the sensor electrode 130Y at the intersection thereof.

[0301] The sensor electrode 130X extends in the direction in which the drive circuit 114 is provided, and is electrically connected to the connection electrode 311b through an opening provided in the solid sealing layer 150 or the like. FIG. 10A to FIG. 10C Although the sensor electrode 130X and the connection electrode 311b are connected via the metal layer 315, the sensor electrode 130X and the connection electrode 311b may be in direct contact with each other. Note that the connection electrode 311b may have the same structure as the pixel electrode.

[0302] An insulating layer 151 is provided on the insulating layer 328 and the other of the sensor electrode 130X and the sensor electrode 130Y. Preferably, a light shielding layer 135 is provided on the insulating layer 151. The light shielding layer 135 may be provided to have a region overlapping with adjacent light emitting devices and the drive circuits 112, 113, and 114.

[0303] The insulating layer 151 and the light shielding layer 135 are bonded to the substrate 140 via an adhesive layer 153. In addition, various optical members such as a circular polarizing plate may be disposed outside the substrate 140.

[0304] Note that a substrate of a material that can be used for the substrate 402 described in Embodiment 2 can be used as the substrate 110 and the substrate 140. Alternatively, a silicon substrate on which a calculation circuit, a memory circuit, or the like is formed can be used. Alternatively, glass epoxy resin or the like can be used.

[0305] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0306] (Implementation 4) In this embodiment, a form of a sensor electrode that can be used in a display device which is one embodiment of the present invention is described.

[0307] Fig. 12A 1 is a diagram for explaining a display device 101 including a camera in a region overlapping with a display portion. Note that the basic structure of the display device 101 may be the same as that of the display device 100 described in Embodiment Mode 1, etc., and includes a camera 116 on the back side of the substrate 110 (the side opposite to the display portion 111). The camera 116 is a camera mainly used to photograph the user, and is also called a front camera. Fig. 12A The substrate 140 facing the substrate 110 is omitted. In addition, the area where the display unit 111 and the camera 116 overlap and the vicinity thereof are referred to as an area D.

[0308] Fig. 12B is a cross section showing region D ( Fig. 12A In addition, Fig. 12C is a top view of region D. Note that Fig. 12C The sensor electrodes 130 are not shown.

[0309] like Fig. 12C As shown, the pixel PIX1 is configured in an area that does not overlap with the camera 116, and the pixel PIX2 is configured in an area that overlaps with the camera 116 or the lens 116L included in the camera 116. Note that the pixels PIX1 and PIX2 described here can also be used as sub-pixels. In addition, in the following description, the camera 116 can be appropriately replaced with the lens 116L of the camera.

[0310] The pixel pitch of the area where the pixel PIX2 is configured is larger than that of the area where the pixel PIX1 is configured. In other words, the pixel density is smaller. In addition, the pixel size of the pixel PIX2 is larger than that of the pixel PIX1. In other words, the area of ​​the light-emitting device of the pixel PIX2 is larger than that of the pixel PIX1.

[0311] By adopting this structure, the amount of light incident on the camera 116 can be increased compared to the case where the camera 116 overlaps the area where the pixel PIX1 is arranged, so that a large amount of data related to shooting can be obtained. In addition, the missing part of the pixel PIX2 due to being a shadow can be filled by image correction with reference to the nearby image. Therefore, shooting can be performed even if the pixel PIX2 is arranged on the camera 116.

[0312] In addition, the area where the pixel PIX2 is arranged has lower definition than the area where the pixel PIX1 is arranged, but by increasing the pixel size (the area of ​​the light-emitting device), the area where the pixel PIX2 is arranged can have the same brightness as the area where the pixel PIX1 is arranged. In addition, the area where the pixel PIX2 is arranged is a sufficiently small area relative to the entire display unit, so the user can see the display without feeling unnatural.

[0313] In this way, the camera 116 can be arranged in a region overlapping with the display unit 111, so that the area of ​​the display unit 111 can be enlarged. In addition, a pinhole or a cutout required when the display unit 111 and the camera 116 are arranged to overlap each other can be eliminated.

[0314] Fig.13A and Fig. 13B 2 is a top view of the region D and also shows the sensor electrode 130. Note that pixels PIX1 and PIX2 are omitted for clarity. Here, the sensor electrode 130 is described without distinguishing between the conductive layers connected in the X direction and the conductive layers connected in the Y direction.

[0315] Fig.13A 1 is a plan view when a light-transmitting conductive film 131T is used as the sensor electrode 130. The light-transmitting conductive film 131T has sufficient light transmittance and can be arranged so as to overlap with the camera 116.

[0316] Fig. 13B FIG. 1 is a top view of a case where a metal layer 131M is used as the sensor electrode 130. The metal layer 131M is basically not light-transmissive. Fig.14A As shown, the metal layer 131M is disposed in a region that does not overlap with the pixel PIX1 and the pixel PIX2. Fig.14A In FIG. 1 , a portion corresponding to the outer shape of the sensor electrode 130 is indicated by a dotted line.

[0317] like Fig. 14B As shown, it is preferable to configure the metal layer 131M so as to have a region overlapping with the gate line GL and the source line SL electrically connected to the pixel PIX (pixel PIX1, PIX2) via an insulating layer (not shown). By adopting this structure, the light emitted by the light emitting device can be emitted to the outside without being blocked.

[0318] Here, in the region where the pixel PIX2 is arranged, the area of ​​the metal layer 131M is preferably smaller than the region where the pixel PIX1 is arranged. By adopting this structure, the reduction in the amount of light incident on the camera 116 can be minimized.

[0319] Fig.15A 1 is a top view when a light-transmitting conductive film 131T and a metal layer 131M are used as the sensor electrode 130. Fig. 15B As shown, the sensor electrode 130 is provided using the metal layer 131M in the region overlapping with the pixel PIX1, and the sensor electrode 130 is provided using the light-transmitting conductive film 131T in the region overlapping with the pixel PIX2. Note that near the end of the region where the pixel PIX2 is provided, the light-transmitting conductive film 131T and the metal layer 131M extending in the region overlapping with the pixel PIX1 may be in contact and conductive with each other.

[0320] Fig.16A , Fig. 16B The following structure is shown: the sensor electrode 130 is provided using the metal layer 131M in the area overlapping with the pixel PIX1, and the sensor electrode 130 is not provided in the area overlapping with the pixel PIX2. The diameter of the lens 116L is smaller than that of a fingertip, etc., so there is no problem even if the sensor electrode 130 is not provided on the camera 116 depending on the application. When this structure is adopted, there are the fewest obstacles that block the light incident on the lens 116L, so it is easy to improve the shooting function.

[0321] In addition, Fig.16A, Fig. 16B In the structure shown in the figure, sometimes one or both of the X direction and the Y direction of the sensor electrode 130 are disconnected in the area overlapping with the camera 116. For example, in the case where the X direction of the sensor electrode 130 is disconnected, as shown in FIG. Fig.17A As shown, the drive circuits 114 (drive circuits 114a, 114b) are arranged on both sides of the sensor electrode 130 and the pulse voltage can be inputted by scanning at the same timing from both sides. In this case, since there is no disconnection in the Y direction, all columns can be read from one side.

[0322] In addition, when the sensor electrode 130 is disconnected in both the X direction and the Y direction, as shown in FIG. Fig. 17B As shown, Fig.17A Similarly, the driving circuits 114 (driving circuits 114a and 114b) are arranged on both sides of the sensor electrode 130. Then, the pulse voltage is inputted by scanning at the same timing from both sides, and the columns separated in the Y direction of the sensor electrode 130 are read from both sides.

[0323] Note that in the above-described embodiment including the metal layer 131M, for example, the case where the major axis of the metal layer 131M forms an angle of 45° with the peripheral edge of the display portion is shown, but Fig.18A As shown, a metal layer 131M may be included that is parallel to the outer peripheral side of the sensor electrode 130. By adopting this structure, it is possible to make the reflected light of the metal layer 131M to the external light less visible.

[0324] In addition, in the above-mentioned embodiment including the metal layer 131M, an example is shown in which the metal layer 131M is arranged so as to surround one pixel PIX. Fig.18B , Fig. 18C As shown, the metal layer 131M may be configured to surround a plurality of pixels such as three or six pixels.

[0325] At least a part of this embodiment mode can be implemented in combination with other embodiment modes described in this specification as appropriate.

[0326] (Implementation method 5) In this embodiment, refer to FIG. 19A to FIG. 19F An example of electronic equipment including the above-mentioned display device will be described.

[0327] Specific examples of electronic devices using a display device of one embodiment of the present invention include display devices such as televisions and monitors, lighting devices, desktop or notebook personal computers, word processors, and computers that reproduce and store data stored on DVDs. Disc: digital versatile disc) and other recording media, a device for reproducing static images or dynamic images, a portable CD player, a radio, a tape recorder, a headphone speaker, a stereo, a table clock, a wall clock, a cordless telephone handset, a walkie-talkie, a mobile phone, a car phone, a portable game console, a tablet terminal, a large-scale game console such as a pinball machine, a calculator, a portable information terminal (also called a "portable information terminal"), an electronic notebook, an electronic book reader terminal, an electronic translator, a voice input device, a video camera, a digital still camera, an electric shaver, a microwave oven and other high-frequency heating device, an electric rice cooker, a washing machine, a vacuum cleaner, a water heater, an electric fan, an electric hair dryer, air conditioning equipment such as an air conditioner, a humidifier, a dehumidifier, etc., a dishwasher, a dishwasher, a dishwasher, a dryer, a dryer, a quilt dryer, a refrigerator, an electric freezer, an electric refrigerator-freezer, a freezer for storing DNA, a flashlight, tools such as a chain saw, a smoke detector, a dialysis device and other medical equipment, etc. Furthermore, industrial equipment such as guide lights, traffic lights, conveyor belts, elevators, escalators, industrial robots, power storage systems, power storage devices for equalizing power and smart grids, etc. can also be cited.

[0328] In addition, mobile bodies propelled by electric motors using power from power storage devices are also included in the category of electronic devices. Examples of the mobile bodies include electric vehicles (EVs), hybrid vehicles (HVs) having both internal combustion engines and electric motors, plug-in hybrid vehicles (PHVs), tracked vehicles using tracks instead of wheels, electric bicycles including electric-assisted bicycles, motorcycles, electric wheelchairs, golf carts, small or large ships, submarines, helicopters, airplanes, rockets, artificial satellites, space probes, planetary probes, and spacecraft.

[0329] The display device according to one embodiment of the present invention can be used for a display unit or a communication device built into these electronic devices.

[0330] Electronic devices may also include sensors (which have the function of sensing, detecting or measuring the following factors: force, displacement, position, speed, acceleration, angular velocity, rotation speed, distance, light, liquid, magnetism, temperature, chemicals, sound, time, hardness, electric field, current, voltage, electricity, radiation, flow, humidity, tilt, vibration, smell or infrared) and the like.

[0331] An electronic device may have various functions. For example, it may have the following functions: a function of displaying various information (static images, dynamic images, text images, etc.) on a display unit; a function of a touch panel; a function of displaying a calendar, date, or time, etc.; a function of executing various software (programs); a function of wireless communication; a function of reading programs or data stored in a storage medium; etc.

[0332] FIG. 19A to FIG. 19F An example of an electronic device is shown.

[0333] Fig.19A An example of a wristwatch-type portable information terminal is shown. The portable information terminal 6100 includes a housing 6101, a display portion 6102, a band 6103, operation buttons 6105, etc. By using the display device of one embodiment of the present invention for the display portion 6102, the portable information terminal 6100 can be miniaturized.

[0334] Fig.19B An example of a mobile phone is shown. A portable information terminal 6200 includes a display portion 6202, operation buttons 6203, a speaker 6204, a microphone 6205, and the like, which are incorporated in a housing 6201. In addition, the display portion 6202 includes a touch sensor and is used as a touch panel.

[0335] Furthermore, the portable information terminal 6200 includes a camera 6209 in a region overlapping with the display portion 6202. With this structure, it is unnecessary to form a pinhole or a cutout in the display portion 6202 for arranging a camera.

[0336] By using the display device of one embodiment of the present invention for the display portion 6202 , the portable information terminal 6200 can be miniaturized.

[0337] Fig.19C An example of a sweeping robot is shown. The sweeping robot 6300 includes a display unit 6302 configured on the surface of a housing 6301, a plurality of cameras 6303 configured on the side, a brush 6304, an operation button 6305, various sensors, etc. The display unit 6302 includes a touch sensor and is used as a touch panel. Although not shown, the sweeping robot 6300 also has wheels, a suction port, etc. The sweeping robot 6300 can walk by itself and can detect garbage 6310 and suck the garbage into the suction port set below.

[0338] For example, the cleaning robot 6300 can determine whether there are obstacles such as walls, furniture, or steps by analyzing the image captured by the camera 6303. In addition, when an object such as a wire that may be entangled with the brush 6304 is found through image analysis, the rotation of the brush 6304 can be stopped. By using the display device of one embodiment of the present invention for the display unit 6302, the cleaning robot 6300 can be miniaturized.

[0339] Fig.19D An example of a robot is shown. Fig.19D The robot 6400 shown includes a computing device 6409 , an illumination sensor 6401 , a microphone 6402 , an upper camera 6403 , a speaker 6404 , a display unit 6405 , a lower camera 6406 , an obstacle sensor 6407 , and a moving mechanism 6408 .

[0340] The microphone 6402 has a function of sensing the user's voice and surrounding sounds, etc. In addition, the speaker 6404 has a function of emitting sounds. The robot 6400 can communicate with the user through the microphone 6402 and the speaker 6404.

[0341] The display unit 6405 has a function of displaying various information. The robot 6400 can display the information required by the user on the display unit 6405. The display unit 6405 includes a touch sensor and is used as a touch panel. In addition, the display unit 6405 can be a detachable information terminal, and by setting it at a fixed position of the robot 6400, charging and data transmission and reception can be performed.

[0342] In addition, the display portion 6405 includes an illumination sensor, a camera, operation buttons, and the like, and the display portion 6405 can be touch-operated using a touch pen or the like. The display portion 6405 has functions such as audio calls, video calls, e-mail, notebook, Internet access, and music playback.

[0343] The upper camera 6403 and the lower camera 6406 have the function of photographing the surrounding environment of the robot 6400. In addition, the obstacle sensor 6407 can detect whether there is an obstacle in the direction of the robot 6400 when it moves forward using the moving mechanism 6408. The robot 6400 can confirm the surrounding environment using the upper camera 6403, the lower camera 6406, and the obstacle sensor 6407 and move safely. The light-emitting device of one embodiment of the present invention can be used for the display unit 6405.

[0344] By using the display device of one embodiment of the present invention for the display portion 6302 , the robot 6400 can be miniaturized.

[0345] Fig.19E An example of a television is shown. Fig.19E The television set 6500 shown includes a housing 6501, a display portion 6502, a speaker 6503, and the like.

[0346] By using the display device of one embodiment of the present invention for the display portion 6502, the television 6500 can be reduced in size. The display portion 6202 includes a touch sensor and is used as a touch panel.

[0347] Fig.19F An example of a car is shown. Car 7160 includes an engine, tires, brakes, a steering device, a camera, etc. Car 7160 includes a display device according to one embodiment of the present invention therein. In addition, the display device includes a touch sensor and is used as a touch panel.

[0348] Fig. 20A 7200 includes a housing 7211, a keyboard 7212, a pointing device 7213, an external connection port 7214, and the like. A display portion 7000 is incorporated in the housing 7211. The display portion 7000 includes a touch sensor and is used as a touch panel.

[0349] Fig. 20B and Fig. 20C An example of digital signage is shown.

[0350] Fig. 20B The digital signage 7300 shown includes a housing 7301, a display unit 7000, a speaker 7303, etc. Furthermore, it may also include an LED lamp, operation keys (including a power switch or an operation switch), a connection terminal, various sensors, a microphone, etc.

[0351] Fig. 20C The digital signage 7400 is shown to be installed on a cylindrical pillar 7401. The digital signage 7400 includes a display unit 7000 installed along the curved surface of the pillar 7401.

[0352] exist Fig. 20B and Fig. 20C In the embodiment, the display portion 7000 includes a touch sensor and is used as a touch panel.

[0353] Next, refer to Fig.21A , Fig. 21B An example of an electronic device including a foldable display device is described. Fig.21A As shown, an electronic device 500 including a display device according to one embodiment of the present invention includes a display device having a region 501A, a region 501B, and a region 501C in a housing 502. Since the display device is a foldable device, the region 501B and the region 501C can be stored in the housing 502 in a folded shape, and thus they can be provided in a curved portion.

[0354] Fig. 21B Show Fig.21A The cross-sectional view of the electronic device 500 is shown along the line X1-X2. Fig. 21B As shown, in electronic device 500, a display device including folded substrate 110 and substrate 140 is housed in housing 502. In addition, housing 502 includes a substrate 540 connected to the display device. Housing 502 protects the display device and the like from stress applied from the outside.

[0355] The region 501A, the region 501B, and the region 501C corresponding to the display portion may be arranged not only in the flat portion but also in the curved portion of the housing 502. The region 501A, the region 501B, and the region 501C include a touch sensor and are used as a touch panel.

[0356] In addition, refer to Fig. 21C Description and Fig.21A , Fig. 21B An example of a different electronic device including a foldable display device. Fig. 21C As shown, an electronic device 500A including a display device according to one embodiment of the present invention includes a display device 501 accommodated in a foldable housing 502. The housing 502 and the display device 501 are both foldable display devices, and thus a foldable electronic device can be realized.

[0357] like Fig. 21C As shown, the electronic device 500A includes a substrate 110 and a substrate 140 disposed along a housing 502. Regardless of the shape of the electronic device 500, a display device 501 may be disposed. Fig. 21C The structure of the electronic device can realize a deformable structure.

[0358] The configuration, structure, method, and the like described in this embodiment mode can be used in combination with the configuration, structure, method, and the like described in other embodiments mode as appropriate. [Explanation of symbols]

[0359] AL: wiring, CL: wiring, GL: gate line, PIX: pixel, RL: wiring, SL: source line, 90B: light emitting device, 90G: light emitting device, 90R: light emitting device, 100T: transistor, 100: display device, 110: substrate, 111: display unit, 112: drive circuit, 113: drive circuit, 114a: drive circuit, 114b: drive circuit, 114: drive circuit, 116L: lens, 116: camera, 118: FPC, 119: FPC, 120a: pixel, 120b: pixel, 120: pixel, 121: pixel array, 122a: sub-pixel, 122b: sub-pixel, 122c: sub-pixel, 122: sub-pixel, 130X: Sensor electrode, 130Y: sensor electrode, 130: sensor electrode, 131M: metal layer, 131T: light-transmitting conductive film, 131X: conductive layer, 131Y: conductive layer, 132: conductive layer, 135: light-shielding layer, 140: substrate, 142a: conductive layer, 142b: conductive layer, 146a: conductive layer, 146b: conductive layer, 148: layer, 149a: conductive layer, 149b: conductive layer, 150: solid sealing layer, 151: insulating layer, 153: adhesive layer, 165: wiring, 166: conductive layer, 201: transistor, 202: transistor, 203: transistor, 204: transistor, 205: transistor, 209: transistor, 210: transistor, 211: Insulating layer, 213: insulating layer, 214: insulating layer, 215: insulating layer, 218: insulating layer, 221: conductive layer, 222a: conductive layer, 222b: conductive layer, 223: conductive layer, 225: insulating layer, 230: connecting portion, 231i: channel formation region, 231n: low resistance region, 231: semiconductor layer, 232: connecting portion, 242: connecting layer, 301: insulating layer, 311a: connecting electrode, 311b: connecting electrode, 311B: pixel electrode, 311G: pixel electrode, 311: pixel electrode, 312B: organic layer, 312G: organic layer, 313: common electrode, 315: metal layer, 321: protective layer, 322: insulating layer, 325: insulating layer, 326: resin layer, 327B: protective layer, 327G: protective layer, 328: insulating layer, 330a: connecting portion, 330b: connecting portion, 340: insulating layer, 402: substrate, 404e: conductive layer, 404: conductive layer, 406: insulating layer, 407a: insulating layer, 407b: insulating layer, 407c: insulating layer, 407: insulating layer, 408: semiconductor layer, 412a: conductive layer, 412a_1: conductive layer, 412a_2: conductive layer, 412b: conductive layer, 415: conductive layer, 441: opening, 500A: electronic device, 500: electronic device, 501A: region, 501B: region, 501C: region, 501: display device, 502: housing,540: substrate, 6100: portable information terminal, 6101: housing, 6102: display unit, 6103: strap, 6105: operation button, 6200: portable information terminal, 6201: housing, 6202: display unit, 6203: operation button, 6204: speaker, 6205: microphone, 6209: camera, 6300: sweeping robot, 6301: housing, 6302: display unit, 6303: camera, 6304: brush, 6305: operation button, 6310: garbage, 6400: robot, 6401: illumination sensor, 6402: microphone, 6403 : Upper camera, 6404: Speaker, 6405: Display unit, 6406: Lower camera, 6407: Obstacle sensor, 6408: Moving mechanism, 6409: Computing device, 6500: Television, 6501: Housing, 6502: Display unit, 6503: Speaker, 7000: Display unit, 7160: Automobile, 7200: Notebook personal computer, 7211: Housing, 7212: Keyboard, 7213: Pointing device, 7214: External connection port, 7300: Digital signage, 7301: Housing, 7303: Speaker, 7400: Digital signage, 7401: Pillar,

Claims

1. A display device, comprising: Pixel circuit; Light emitting device; Sensor electrodes; as well as The first driving circuit, The first driving circuit has a function of supplying a signal potential to the sensor electrode. The pixel circuit and the first driving circuit are arranged on the same substrate. The pixel circuit is arranged in the display unit. The pixel circuit comprises a first transistor, The first driving circuit includes a second transistor, The light emitting device comprises a first electrode, a light emitting layer and a second electrode. The light emitting layer is disposed between the first electrode and the second electrode, The first electrode is electrically connected to one of a source and a drain of the first transistor, The second electrode is electrically connected to a power line in a region outside the display unit, A first insulating layer is disposed on the second electrode, The first insulating layer is provided with an opening in a region outside a connection portion between the second electrode and the power line. The sensor electrode is arranged on the first insulating layer, The sensor electrode is electrically connected to the source or drain of the second transistor through the opening, Furthermore, the second transistor is a transistor having a channel formation region along a side surface of a second insulating layer provided on the substrate.

2. The display device according to claim 1, The sensor electrode is electrically connected to the source or drain of the second transistor through a connecting electrode.

3. The display device according to claim 2, The connecting electrode is a conductive layer formed by the same process as the first electrode.

4. The display device according to claim 1, The first transistor is a transistor having a channel formation region along a side surface of the second insulating layer.

5. The display device according to claim 1, The second transistor is a transistor including a metal oxide in a channel formation region.

6. The display device according to claim 1, further comprising: The second driving circuit, wherein the pixel circuit comprises a third transistor, The second driving circuit is used as a gate driver, The second driving circuit includes a fourth transistor, One of the source and the drain of the fourth transistor is electrically connected to the gate of the third transistor, And the fourth transistor is a transistor having a channel formation region along a side surface of the second insulating layer.

7. The display device according to claim 6, The fourth transistor is a transistor including a metal oxide in a channel formation region.

8. The display device according to claim 1, further comprising: The third driving circuit, wherein the pixel circuit comprises a fifth transistor, The third driving circuit is used as a source driver, The third driving circuit includes a sixth transistor, One of the source and the drain of the sixth transistor is electrically connected to one of the source and the drain of the fifth transistor, And the sixth transistor is a transistor having a channel formation region along the side surface of the second insulating layer.

9. The display device according to claim 8, The sixth transistor is a transistor including a metal oxide in a channel formation region.

10. The display device according to claim 1, A camera is arranged on the side of the substrate opposite to the side on which the pixel circuit is arranged. Furthermore, in the display unit, a first area overlapping with the lens of the camera has a larger pixel pitch than a second area not overlapping with the lens of the camera.

11. The display device according to claim 10, The sensor electrode is provided using a metal layer in the first region and the second region so as to have a region overlapping with a wiring electrically connected to the pixel circuit.

12. The display device according to claim 10, wherein in the first region, the sensor electrode is provided using a light-transmitting conductive film, In the second region, the sensor electrode is provided using a metal layer in such a manner as to have a region overlapping with a wiring electrically connected to the pixel circuit, And the light-transmitting conductive film is electrically connected to the metal layer extending to the second region.

13. The display device according to claim 10, wherein in the second region, the sensor electrode is provided using a metal layer in such a manner as to have a region overlapping with a wiring electrically connected to the pixel circuit, And the sensor electrode is not arranged in the first region.

14. An electronic device comprising: The display device according to any one of claims 1 to 13; as well as speaker.

Images