Process chamber, slide plate robot, and slide plate temporary storage device

Abstract

The application discloses a process chamber, a slide plate mechanical hand and a slide plate temporary storage device. The process chamber comprises a chamber body, a lifting mechanism and a heater arranged in the chamber body. The heater comprises a plurality of layers of heating plates which are arranged at intervals and are used for heating the slide plates carrying silicon wafers. The heating plates are provided with avoiding structures. The lifting mechanism comprises a lifting frame arranged in the chamber body. The lifting frame comprises a plurality of layers of first supporting blocks which are arranged at intervals. Each layer of the first supporting blocks is opposite to the avoiding structure of the corresponding heating plate. In the process of lifting the lifting frame, each layer of the first supporting blocks passes through the opposite avoiding structure upwards and carries the corresponding slide plate, so that the slide plate is separated from the corresponding heating plate. In the process of lowering the lifting frame, each layer of the first supporting blocks passes through the opposite avoiding structure downwards and makes the slide plate carried thereby fall on the corresponding heating plate, so as to be separated from the slide plate carried thereby.

Description

TECHNICAL FIELD

[0001] The application belongs to the technical field of semiconductor process equipment, and particularly relates to a process chamber, a wafer plate manipulator and a wafer plate temporary storage device. BACKGROUND

[0002] Heterojunction solar cells have multiple advantages such as unique structure, excellent passivation performance, high theoretical efficiency, short production process, small thermal damage, high double-side rate, low temperature coefficient, low decay rate and high thinning degree, and therefore have broad market prospects.

[0003] In the related art, a key process for manufacturing a heterojunction solar cell is to deposit an intrinsic amorphous silicon thin film layer on both sides of a silicon wafer and then deposit an N-type crystalline silicon or amorphous silicon thin film layer and a P-type crystalline silicon or amorphous silicon thin film layer on the intrinsic amorphous silicon thin film layers on both sides, which is usually implemented by a plasma chemical vapor deposition (PECVD) device. Different film layers are deposited in different process chambers. In the related art, semiconductor process equipment for manufacturing a heterojunction solar cell involves a plurality of process chambers arranged in series and occupying a large floor space in a factory, which results in a high configuration cost of a process line of the semiconductor process equipment. At the same time, the semiconductor process equipment for manufacturing a heterojunction solar cell in the related art also has a low process efficiency, which results in a low production capacity of the semiconductor process equipment for manufacturing a heterojunction solar cell. SUMMARY

[0004] The application discloses a process chamber, a wafer plate manipulator and a wafer plate temporary storage device to at least solve one of the technical problems described in the background.

[0005] To solve the above technical problems, the application provides the following technical solutions:

[0006] In a first aspect, the application discloses a process chamber, which comprises a chamber body, a lifting mechanism and a heater arranged in the chamber body. The heater comprises a plurality of layers of heating plates arranged at intervals. The heating plates are used to heat the wafer plates carrying silicon wafers. The heating plates are provided with avoiding structures.

[0007] The lifting mechanism comprises a lifting frame arranged in the chamber body. The lifting frame comprises a plurality of layers of first support blocks arranged at intervals. Each layer of the first support blocks is opposite to the avoiding structure of the corresponding heating plate.

[0008] During the lifting of the lifting frame, each first support block passes through the opposite avoiding structure upwardly and carries the corresponding slide plate to separate the slide plate from the corresponding heating plate; during the lowering of the lifting frame, each first support block passes through the opposite avoiding structure downwardly and makes the slide plate carried thereby to fall on the corresponding heating plate to separate the slide plate carried thereby from the corresponding heating plate.

[0009] In a second aspect, the embodiment of the present application discloses a slide plate manipulator, which is used in cooperation with the process chamber of the first aspect, and comprises a finger seat and a plurality of second mechanical fingers arranged on the finger seat. During the taking and placing of the slide plates, the plurality of second mechanical fingers can respectively extend to the interlayer between the corresponding heating plate and the first support block through the opening of the chamber body, and contact the slide plate carried on the first support block to carry the slide plate during the lowering of the lifting frame. During the lifting of the lifting frame, the slide plate carried on the plurality of second mechanical fingers contacts the first support block of the lifting frame to be carried onto the first support block.

[0010] In a third aspect, the embodiment of the present application discloses a slide plate temporary storage device, which is used in cooperation with the slide plate manipulator of the second aspect, and comprises a second frame body and a plurality of second support blocks arranged on the second frame body. The second frame body has a plurality of slide plate temporary storage spaces, each of which is provided with a plurality of layers of second support blocks distributed at intervals. The slide plate manipulator can deliver a plurality of slide plates received thereby into the slide plate temporary storage spaces, so that the plurality of slide plates are respectively carried on the plurality of layers of second support blocks in the slide plate temporary storage spaces. Alternatively, the slide plate manipulator can take out a plurality of slide plates received in the slide plate temporary storage spaces.

[0011] The process chamber disclosed by the embodiment of the present application is provided with a plurality of heating plates and a lifting frame comprising a plurality of first support blocks, and the transfer of the wafer plate carrying the silicon wafers between the heating plates and the first support blocks is realized by the lifting of the lifting frame. In the specific transfer process, the wafer plate robot group grasps the wafer plate carrying the silicon wafers into the process chamber, and the wafer plate robot group can exit the process chamber, and the lifting frame drives the plurality of first support blocks to descend so that the first support blocks pass through the corresponding avoiding structure, and finally the wafer plate group falls on the plurality of heating plates, and finally the wafer plate is carried by the heating plate, and the subsequent heating is prepared. After the process in the process chamber is completed, the lifting frame rises so that the plurality of first support blocks pass through the avoiding structure of the corresponding heating plate to support the wafer plate carrying the silicon wafers, and then the wafer plate carrying the silicon wafers is separated from the corresponding heating plate. In this case, the plurality of second robots of the wafer plate robot respectively extend into the interlayer between the corresponding heating plate and the wafer plate, and then the lifting frame falls to finally make the wafer plate carrying the silicon wafers fall on the corresponding second robot finger, and finally the wafer plate robot group moves the wafer plate carrying the silicon wafers processed by the process chamber out of the process chamber. Therefore, the process chamber disclosed by the embodiment of the present application can be used for the wafer plate group carrying the silicon wafers to enter and exit, and then the process of the wafer group is realized, which is beneficial to improve the process efficiency, and finally the purpose of improving the production capacity of the semiconductor process equipment is achieved. BRIEF DESCRIPTION OF DRAWINGS

[0012] Figure 1 is a structural schematic diagram of a semiconductor process equipment disclosed by the embodiment of the present application, Figure 1 the protection cabin shows part of the structure;

[0013] Figure 2 is a structural schematic diagram of a chamber module disclosed by the embodiment of the present application;

[0014] Figure 3 is a structural schematic diagram of another chamber module disclosed by the embodiment of the present application;

[0015] Figure 4 is a structural schematic diagram of another chamber module disclosed by the embodiment of the present application;

[0016] Figure 5 is a structural schematic diagram of a semiconductor process equipment disclosed by the embodiment of the present application;

[0017] Figure 6 is a structural schematic diagram of a silicon wafer robot disclosed by the embodiment of the present application;

[0018] Figure 7 is a schematic diagram of a wafer mechanical hand taking and placing wafer on the wafer plate temporary storage device disclosed by the embodiment of the present application;

[0019] Figure 8 is a schematic diagram of a wafer mechanical hand taking and placing wafer on the wafer basket loading and unloading device disclosed by the embodiment of the present application;

[0020] Figure 9 is a structural schematic diagram of the wafer plate temporary storage device disclosed by the embodiment of the present application;

[0021] Figure 10 is a structural schematic diagram of the wafer plate mechanical hand disclosed by the embodiment of the present application;

[0022] Figure 11 is a schematic diagram of the cooperation of the first wafer plate mechanical hand, the first wafer plate temporary storage device and the first wafer mechanical hand disclosed by the embodiment of the present application;

[0023] Figure 12 is a schematic diagram of the cooperation of the second wafer mechanical hand, the wafer flipping temporary storage device and the second wafer plate temporary storage device disclosed by the embodiment of the present application;

[0024] Figure 13 is a structural schematic diagram of the process chamber disclosed by the embodiment of the present application;

[0025] Figure 14 is a sectional view of A-A in Figure 13 ;

[0026] Figure 15 is an enlarged schematic diagram of B part in Figure 14 ;

[0027] Figure 16 is an enlarged schematic diagram of C part in Figure 14 ;

[0028] Figure 17 is a partial structural schematic diagram of the process chamber disclosed by the embodiment of the present application;

[0029] Figure 18 is a structural schematic diagram of the partial structure of the process chamber in a state disclosed by the embodiment of the present application;

[0030] Figure 19 is an enlarged schematic diagram of D part in Figure 18 ;

[0031] Figure 20 is a structural schematic diagram of the partial structure of the process chamber in another state disclosed by the embodiment of the present application;

[0032] Figure 21 is an enlarged schematic diagram of E part in Figure 20Enlarged view of part E in FIG. 1;

[0033] Figure 22 Structure diagram of the heater according to an embodiment of the present application;

[0034] Figure 23 Structure diagram of the heater according to an embodiment of the present application; Figure 22 Enlarged view of part F in FIG. 1;

[0035] Figure 24 Structure diagram of the slide plate according to an embodiment of the present application;

[0036] Figure 25 Structure diagram of the slide plate according to an embodiment of the present application; Figure 24 Enlarged view of part G in FIG. 1;

[0037] Figure 26 Structure diagram of the lifting mechanism according to an embodiment of the present application;

[0038] Figure 27 Structure diagram of the driving mechanism according to an embodiment of the present application;

[0039] Figure 28 Structure diagram of the first supporting block according to an embodiment of the present application;

[0040] Figure 29 Structure diagram of the heater according to an embodiment of the present application;

[0041] Figure 30 Enlarged view of part H in FIG. 1; Figure 29

[0042] Enlarged view of part I in FIG. 1; Figure 31 Figure 29 Structure diagram of the slide plate according to an embodiment of the present application;

[0043] Figure 32 Structure diagram of the slide plate and the heating plate according to an embodiment of the present application;

[0044] Figure 33 Structure diagram of the limiting block according to an embodiment of the present application;

[0045] Figure 34 Partial structure diagram of the slide plate mechanical hand according to an embodiment of the present application;

[0046] Figure 35 Structure diagram of the slide plate and the second mechanical finger according to an embodiment of the present application;

[0047] Figure 36 Enlarged view of part J in FIG. 1;

[0048] Figure 37 Figure 36 ​​Structure schematic diagram in other perspective view;

[0049] Figure 38 Structure schematic diagram of the second mechanical finger disclosed by the embodiment of the present application;

[0050] Figure 39 Structure schematic diagram of the second mechanical finger disclosed by the embodiment of the present application; Figure 38 Enlarged schematic diagram of J part in

[0051] Explanation of reference signs:

[0052] 100-chamber module,

[0053] 101-first process chamber, 102-second process chamber, 103-third process chamber, 104-fourth process chamber, 105-stacked support, 1051-chamber containing space,

[0054] 110-chamber body, 111-penetration hole,

[0055] 120-heater, 121-heating plate, 1211-avoidance structure, 1212-second avoidance hole, 122-support, 123-foot support, 124-limiting block, 1241-first calibration inclined surface, 1242-first vertical limiting surface, 125-insulating plate,

[0056] 130-lifting mechanism, 131-driving mechanism, 1311-power source, 1312-transmission mechanism, 13121-screw rod, 13122-jacking part, 13123-ring-shaped pressing plate, 13124-telescopic pipe, 13125-sealing ring, 13126-connecting plate, 13127-guiding rod, 13128-base, 13129-threaded bushing, 13130-first speed reducer, 13131-linking shaft, 13132-second speed reducer, 13133-coupling, 132-lifting frame, 1321-first supporting block, 13211-second calibration inclined surface, 13212-first horizontal supporting surface, 13213-second vertical limiting surface, 1322-vertical beam, 1323-cross beam,

[0057] 200-transmission device,

[0058] 201-first silicon wafer mechanical hand, 202-second silicon wafer mechanical hand, 203-first wafer plate temporary storage device, 204-second wafer plate temporary storage device, 205-first wafer plate mechanical hand, 206-second wafer plate mechanical hand,

[0059] 210 - slide plate mechanical hand, 211 - finger seat, 212 - second mechanical finger, 2121 - first positioning protrusion, 213 - support pad, 214 - rotation driving part, 215 - guide rail, 216 - vertical driving part, 217 - horizontal driving part, 2171 - first horizontal guide rail, 2172 - second horizontal guide rail, 2173 - first sub-driving part, 2174 - second sub-driving part,

[0060] 220 - slide plate temporary storage device, 221 - second frame body, 222 - second support block, 223 - first base, 224 - first rotating shaft,

[0061] 230 - slide plate, 231 - silicon wafer groove, 232 - positioning hole,

[0062] 240 - silicon wafer mechanical hand, 241 - first mechanical finger, 242 - six-axis industrial robot, 243 - base,

[0063] 250 - flip temporary storage device,

[0064] 260 - flower basket feeding and discharging device,

[0065] 300 - transport vehicle,

[0066] 400 - protection cabin,

[0067] 401 - first slide plate transmission port, 402 - second slide plate transmission port, 403 - silicon wafer transmission port,

[0068] 410 - first sub-cabin,

[0069] 420 - second sub-cabin,

[0070] 430 - first sealing door,

[0071] 440 - second sealing door,

[0072] 450 - third sub-cabin. DETAILED DESCRIPTION

[0073] In order to make the purpose, technical scheme and advantages of the present application clearer, the technical scheme of the present application will be described clearly and completely below in combination with the specific embodiments of the present application and corresponding drawings. Obviously, the described embodiments are only some of the embodiments of the present application, not all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative labor fall within the scope of protection of the present application.

[0074] The technical scheme disclosed by each embodiment of the present application will be described in detail below in combination with the drawings.

[0075] Please refer to Figures 1 to 39Embodiments of the present application disclose a semiconductor process equipment, which can be used for producing heterojunction solar cells. The semiconductor process equipment comprises a chamber module 100 and a conveying device 200.

[0076] The chamber module 100 comprises a plurality of process chambers. Each process chamber is used for performing a semiconductor process on a silicon wafer. In embodiments of the present application, the plurality of process chambers of the chamber module 100 comprises a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104. The first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 are cooperated with each other to perform a coating process on the silicon wafer by performing different semiconductor processes on the silicon wafer respectively.

[0077] The conveying device 200 is used for conveying the silicon wafer, so that the silicon wafer is conveyed between the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104. In one embodiment, the conveying device 200 conveys the silicon wafer, so that the silicon wafer is sequentially subjected to the first process chamber 101, the third process chamber 103, the second process chamber 102 and the fourth process chamber 104. In another embodiment, the conveying device 200 conveys the silicon wafer, so that the silicon wafer is sequentially subjected to the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104. In other embodiments, the conveying device 200 can convey the silicon wafer, so that the silicon wafer is conveyed between the process chambers in other sequences. It should be noted that the conveying sequence of the silicon wafer between the plurality of process chambers of each chamber module is determined according to a set semiconductor process sequence and the types of semiconductor processes that can be performed by the process chambers, and embodiments of the present application are not limited thereto.

[0078] In embodiments of the present application, the conveying device 200 can have various types, as long as it can realize the conveying of the silicon wafer between different process chambers. For example, the conveying device 200 only comprises a plurality of mechanical hands of the same type, which can grasp the silicon wafer and realize the conveying of the silicon wafer between different process chambers. For another example, the conveying device 200 comprises mechanical hands for grasping the silicon wafer and also comprises devices for temporarily storing the silicon wafer. For another example, the conveying device 200 comprises a plurality of mechanical hands of different types, which can grasp the silicon wafer and realize the conveying of the silicon wafer between different process chambers. Embodiments of the present application do not limit the specific types of the conveying device 200.

[0079] The chamber module 100 disclosed by the embodiment of the present application can comprise at least one stacked chamber structure. The stacked chamber structure comprises at least two process chambers stacked in sequence. It should be noted that the at least two process chambers comprised by the stacked chamber structure are stacked in sequence in the height direction of the chamber module 100. Alternatively, it can be considered that, among the at least two process chambers comprised by the stacked chamber structure, one of the two adjacent process chambers is stacked above the other, thereby achieving the sequence stacking in the vertical direction. Such a structure can enable the plurality of process chambers in each stacked chamber structure to only occupy the floor area of one process chamber.

[0080] The semiconductor process equipment disclosed by the embodiment of the present application adjusts the layout of the process chambers, so that the chamber module 100 comprises a stacked chamber structure, thereby enabling the at least two process chambers comprised by the stacked chamber structure to be stacked in sequence. In this case, each stacked chamber structure can enable the at least two process chambers stacked in sequence to only occupy the floor area of one process chamber. Compared with laying all the process chambers of the semiconductor process equipment on the ground, the semiconductor process equipment disclosed by the embodiment of the present application undoubtedly can reduce the floor area of the semiconductor process equipment, thereby reducing the cost of laying out the semiconductor process production line, and ultimately being conducive to achieving the purpose of reducing cost and increasing efficiency.

[0081] In one embodiment, in the chamber module 100 disclosed by the embodiment of the present application, the number of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 can each be one. In this case, the chamber module 100 comprises one first process chamber 101, one second process chamber 102, one third process chamber 103 and one fourth process chamber 104, thereby enabling the chamber module 100 to be configured with the least number of process chambers, which is conducive to reducing the hardware configuration cost of the chamber module 100.

[0082] In another embodiment, at least one of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 in the chamber module 100 disclosed in the embodiments of the present application can be multiple. In a more specific embodiment, all of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 in the chamber module 100 disclosed in the embodiments of the present application can be multiple. In this case, the chamber module 100 includes multiple first process chambers 101, multiple second process chambers 102, multiple third process chambers 103 and multiple fourth process chambers 104, so that when a certain first process chamber 101, a certain second process chamber 102, a certain third process chamber 103 or a certain fourth process chamber 104 in the chamber module 100 fails, the semiconductor process equipment can be replaced by other first process chambers 101, other second process chambers 102, other third process chambers 103 or other fourth process chambers 104, thereby ensuring that the semiconductor process equipment will not be shut down due to the failure of a certain first process chamber 101, a certain second process chamber 102, a certain third process chamber 103 or a certain fourth process chamber 104, and thereby ensuring the stability of the semiconductor process equipment production.

[0083] In another more specific embodiment, in the chamber module 100 disclosed in the embodiments of the present application, some of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 are one, and some are multiple. The chamber module 100 of this structure can be designed to configure the process chambers that are prone to failure as multiple, and the process chambers that are not prone to failure as one, so that the number of process chambers in the chamber module 100 is not too large, and at the same time, when the process chambers that are prone to failure fail, they can be replaced by other process chambers of the same type, ultimately also taking into account the stability of the semiconductor process equipment production.

[0084] It should be emphasized that the embodiments of the present application do not limit the specific number of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104.

[0085] The semiconductor process equipment disclosed in the embodiments of the present application can include one chamber module 100, or can include a plurality of chamber modules 100. Similarly, the embodiments of the present application do not limit the number of chamber modules 100. In the semiconductor process equipment disclosed in the embodiments of the present application, since each chamber module 100 includes a stacked chamber structure, the footprint of the chamber module 100 is small. In the case where the factory space is determined, the factory space can be fully utilized by adjusting the number of chamber modules 100. At the same time, the chamber module 100 makes the layout of the process chambers in the factory similar to the modular layout, which is conducive to making the construction of the process line of the semiconductor process equipment clear and easy.

[0086] As described above, the chamber module 100 includes at least one stacked chamber structure. Each chamber module 100 can include one stacked chamber structure, or can include a plurality of stacked chamber structures. In one embodiment, each chamber module 100 can include a first process chamber 101, a second process chamber 102, a third process chamber 103, and a fourth process chamber 104. Any two of the first process chamber 101, the second process chamber 102, the third process chamber 103, and the fourth process chamber 104 are stacked to form a stacked chamber structure, and the other two process chambers can be stacked to form another stacked chamber structure, so that each chamber module 100 can form two stacked chamber structures. In another embodiment, when each chamber module 100 includes a first process chamber 101, a second process chamber 102, a third process chamber 103, and a fourth process chamber 104, any two of the process chambers can be stacked to form a stacked chamber structure, and the other two process chambers can not be stacked. This structure can also reduce the footprint of the chamber module 100.

[0087] In embodiments of the present application, the stack chamber structure can include at least two process chambers. For example, the stack chamber structure can include two process chambers stacked in sequence. The stack chamber structure can also include three process chambers stacked in sequence. The stack chamber structure can further include four process chambers stacked in sequence. Still taking the chamber module 100 including a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104 as an example, in an embodiment, the chamber module 100 includes a stack chamber structure, any three of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 are stacked to form a stack chamber structure. In another embodiment, the chamber module 100 includes a stack chamber structure, the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 are stacked to form a stack chamber structure.

[0088] Since embodiments of the present application do not limit the number of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 included in the chamber module 100, nor the number of process chambers included in the stack chamber structure, embodiments of the present application also do not limit the number of stack chamber structures included in the chamber module 100.

[0089] In the stack chamber structure disclosed in embodiments of the present application, there are various ways to stack the process chambers included in the stack chamber structure. In an embodiment, at least two process chambers included in the stack chamber structure can be directly stacked, that is, in two adjacent process chambers in the stack chamber structure, the upper process chamber is supported on the lower process chamber, and the upper process chamber is in contact with the lower process chamber. This direct contact support stacking method can make the stack chamber structure more compact. In another embodiment, the chamber module disclosed in embodiments of the present application can also include a stack support 105, and each stack chamber structure can include a stack support 105. The stack support 105 includes a plurality of chamber accommodating spaces 1051, and the process chambers included in the stack chamber structure are placed in the plurality of chamber accommodating spaces 1051, respectively. Specifically, at least two process chambers included in the stack chamber structure can be placed in the plurality of chamber accommodating spaces 1051 of the stack support 105 one by one, so as to be arranged respectively. In this structure, two adjacent process chambers in each stack chamber structure can be supported on the stack support 105 without direct support contact, which can reduce the interference between the two adjacent process chambers. In addition, this structure also facilitates the removal and replacement of the lower process chamber without being affected by the upper process chamber.

[0090] In an embodiment of the present application, the first process chamber 101 can be used to deposit a first intrinsic amorphous silicon thin film layer on the front side of the silicon wafer. The second process chamber 102 can be used to deposit a second intrinsic amorphous silicon thin film layer on the back side of the silicon wafer. The third process chamber 103 can be used to deposit an N-type crystalline or amorphous silicon thin film layer on the second intrinsic amorphous silicon thin film layer. The fourth process chamber 104 can be used to deposit a P-type crystalline or amorphous silicon thin film layer on the first intrinsic amorphous silicon thin film layer.

[0091] In one exemplary process for processing the silicon wafer, the transport device 200 can control the silicon wafer to sequentially go through the first process chamber 101, the second process chamber 102, the third process chamber 103, and the fourth process chamber 104, so as to deposit the first intrinsic amorphous silicon thin film layer, the second intrinsic amorphous silicon thin film layer, the N-type crystalline or amorphous silicon thin film layer, and the P-type crystalline or amorphous silicon thin film layer, respectively. In another exemplary process for processing the silicon wafer, the transport device 200 can also control the silicon wafer to sequentially go through the first process chamber 101, the third process chamber 103, the second process chamber 102, and the fourth process chamber 104, so as to deposit the first intrinsic amorphous silicon thin film layer, the N-type crystalline or amorphous silicon thin film layer, the second intrinsic amorphous silicon thin film layer, and the P-type crystalline or amorphous silicon thin film layer, respectively. In yet another exemplary process for processing the silicon wafer, the transport device 200 can further control the silicon wafer to sequentially go through the first process chamber 101, the second process chamber 102, the fourth process chamber 104, and the third process chamber 103, so as to deposit the first intrinsic amorphous silicon thin film layer, the second intrinsic amorphous silicon thin film layer, the P-type crystalline or amorphous silicon thin film layer, and the N-type crystalline or amorphous silicon thin film layer, respectively.

[0092] In a specific process design, the inventor of the present application has found that if the P-type crystalline or amorphous silicon thin film layer is deposited after the N-type crystalline or amorphous silicon thin film layer, it is easy to cause undesirable contamination to the deposition of the N-type crystalline or amorphous silicon thin film layer. Therefore, the deposition of the P-type crystalline or amorphous silicon thin film layer can be performed last, i.e., before the deposition of the P-type crystalline or amorphous silicon thin film layer, the deposition of the first intrinsic amorphous silicon thin film layer, the second intrinsic amorphous silicon thin film layer, and the N-type crystalline or amorphous silicon thin film layer are performed first.

[0093] In one embodiment, the chamber module 100 disclosed in an embodiment of the present application can include two stacked chamber structures, one of which includes the first process chamber 101 and the fourth process chamber 104 stacked above the first process chamber 101, and the other of which includes the third process chamber 103 and the second process chamber 102 stacked above the third process chamber 103.

[0094] In another embodiment, the chamber module 100 disclosed by the embodiments of the present application can include two stacked chamber structures, one of which includes the first process chamber 101 and the fourth process chamber 104 stacked above the first process chamber 101, and the other of which includes the second process chamber 102 and the third process chamber 103 stacked above the second process chamber 102.

[0095] The semiconductor process equipment disclosed by the embodiments of the present application can further include a controller, which can be a PLC control circuit or an upper computer, and the embodiments of the present application do not limit the specific type of the controller. The controller is connected with the conveying device 200, and specifically, the controller and the conveying device 200 can be connected in communication through a wired or wireless manner, so as to control the conveying device 200 and further control the conveying device 200 to perform corresponding conveying work.

[0096] In one embodiment, the controller can control the semiconductor process equipment to sequentially perform the following steps:

[0097] S110, control the conveying device 200 to convey the unprocessed silicon wafer into the first process chamber 101 and deposit a first intrinsic amorphous silicon film layer on the front surface of the silicon wafer.

[0098] S120, control the conveying device 200 to turn over the silicon wafer processed by the first process chamber 101 and convey the silicon wafer to the second process chamber 102 after turning over to deposit a second intrinsic amorphous silicon film layer on the back surface of the silicon wafer.

[0099] S130, control the conveying device 200 to convey the silicon wafer processed by the second process chamber 102 to the third process chamber 103 and deposit an N-type crystalline silicon or amorphous silicon film layer on the second intrinsic amorphous silicon film layer.

[0100] S140, control the conveying device 200 to turn over the silicon wafer processed by the third process chamber 103 and convey the silicon wafer to the fourth process chamber 104 after turning over and deposit a P-type crystalline silicon or amorphous silicon film layer on the first intrinsic amorphous silicon film layer.

[0101] It should be noted that in the embodiments of the present application, the front surface of the silicon wafer and the back surface of the silicon wafer are two opposite surfaces of the silicon wafer, the surface of the silicon wafer on which the first intrinsic amorphous silicon film layer is deposited is the front surface of the silicon wafer, and the surface of the silicon wafer on which the second intrinsic amorphous silicon film layer is deposited is the back surface.

[0102] In consideration of the execution of the above steps, the first process chamber 101 and the second process chamber 102 are process chambers in which the silicon wafer needs to enter in sequence for corresponding processes in the process. In order to improve the transmission efficiency of the silicon wafer, in the same chamber module 100, the first process chamber 101 and the second process chamber 102 can be located at the middle height of the two adjacent stack chamber structures, for example, the first process chamber 101 and the second process chamber 102 can be located at the bottom of the two adjacent stack chamber structures. Such a structure can make the transmission device 200 not need to consider the difference in height between the first process chamber 101 and the second process chamber 102 in the process of transmitting the silicon wafer from the first process chamber 101 to the second process chamber 102, which is conducive to faster transmission.

[0103] As described above, the transmission device 200 disclosed in the embodiments of the present application can have various types. In one embodiment, the transmission device 200 disclosed in the embodiments of the present application can include a first silicon wafer robot 201. The first silicon wafer robot 201 is a robot for picking and placing silicon wafers. The first silicon wafer robot 201 is used to pick and place unprocessed silicon wafers to prepare for pre-processing. The first silicon wafer robot 201 is also used to pick and place processed silicon wafers to prepare for post-processing. It should be noted that "pre-processing" herein refers to that the silicon wafer has not been processed in any of the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 of the chamber module 100. "Post-processing" herein refers to that the silicon wafer has been processed in the first process chamber 101, the second process chamber 102, the third process chamber 103 and the fourth process chamber 104 of the chamber module 100, thereby forming a processed silicon wafer.

[0104] It should be noted that the processed silicon wafer described herein refers to a silicon wafer that has only completed the process in the chamber module 100, and does not mean that the silicon wafer for preparing a heterojunction solar cell has completed all processes.

[0105] In the embodiment of the present application, the first silicon wafer manipulator 201 is used not only for taking and placing the silicon wafer before the process to prepare for the feeding before the process, but also for taking and placing the silicon wafer after the process to prepare for the feeding after the process. It can be seen that the first silicon wafer manipulator 201 has multiple functions, and thus the feeding before the process and the feeding after the process can share the first silicon wafer manipulator 201, so that a plurality of special manipulators for multiple functions do not need to be configured, which undoubtedly can simplify the structure of the conveying device 200 and is beneficial to reducing the configuration cost of the conveying device 200. In the embodiment of the present application, the first silicon wafer manipulator 201 can be one, so as to further reduce the configuration cost. Of course, in other embodiments, the first silicon wafer manipulator 201 can be multiple, for example, two, in which case the two first silicon wafer manipulators 201 can be used alternately, and when one of the first silicon wafer manipulators 201 fails, the other first silicon wafer manipulator 201 can be used immediately to replace the work, so as to ensure the stability of the conveying work.

[0106] In a further embodiment, the first silicon wafer manipulator 201 is used to take and place the silicon wafer in groups, that is, the first silicon wafer manipulator 201 can grasp a group of silicon wafers at a time, and the first silicon wafer manipulator 201 can place a group of silicon wafers at a time, each group of silicon wafers including a plurality of silicon wafers. The grasping mode of the first silicon wafer manipulator 201 can improve the taking and placing efficiency of the silicon wafer, which is beneficial to improving the conveying efficiency and ultimately improving the production capacity of the semiconductor process equipment.

[0107] The embodiment of the present application does not limit the type of the first silicon wafer manipulator 201. In one embodiment, the first silicon wafer manipulator 201 can be a clamping manipulator, that is, the clamping manipulator is used to grasp the silicon wafer by mechanical clamping or to place the silicon wafer by releasing the clamping. The clamping force of the clamping manipulator is not easy to control, and the silicon wafer is easy to be damaged in the process of clamping and placing. In addition, in the process of taking and placing the silicon wafer in groups, it is difficult to unify the clamping force of the clamping manipulator on the group of grasped silicon wafers, and finally the stability of the taking and placing of the silicon wafer is poor. In another embodiment, the first silicon wafer manipulator 201 can be a vacuum manipulator, which is used to grasp the silicon wafer by vacuum adsorption or to place the silicon wafer by releasing the vacuum. The vacuum manipulator has less damage to the silicon wafer, so that the conveying device 200 has less damage to the silicon wafer in the conveying process, and ultimately is beneficial to improving the yield of the silicon wafer after the process.

[0108] The transmission device 200 disclosed by the embodiment of the present application can further comprise a first wafer plate temporary storage device 203 and a first wafer plate mechanical hand 205. The first wafer plate temporary storage device 203 is essentially a device for temporarily storing wafers. The wafers can be unprocessed wafers or processed wafers. The first wafer mechanical hand 201 is used to take and place wafers on the first wafer plate temporary storage device 203 in groups. Specifically, the first wafer mechanical hand 201 is used to take unprocessed wafers in groups and place them on the first wafer plate temporary storage device 203. The first wafer mechanical hand 201 is also used to take processed wafers from the first wafer plate temporary storage device 203 in groups and transport them away.

[0109] The first wafer plate mechanical hand 205 is used to transmit wafers in groups between the first process chamber 101 and the first wafer plate temporary storage device 203. In this case, the control of the transmission device 200 described in S110 above, which transmits unprocessed wafers into the first process chamber 101 and deposits a first intrinsic amorphous silicon thin film layer on the front side of the wafers, comprises: the controller controls the first wafer mechanical hand 201 to transmit unprocessed wafers into the first wafer plate temporary storage device 203 in groups, and then controls the first wafer plate mechanical hand 205 to transmit the unprocessed wafers into the first process chamber 101 in groups, and deposits a first intrinsic amorphous silicon thin film layer on the front side of the wafers in the first process chamber 101.

[0110] Specifically, the controller can be communicatively connected with the first wafer mechanical hand 201 and the first wafer plate mechanical hand 205 respectively, so as to control the first wafer mechanical hand 201 and the first wafer plate mechanical hand 205.

[0111] The first wafer plate robot 205 can directly transfer the unprocessed silicon wafers from the first wafer plate temporary storage device 203 into the first process chamber 101. In order to avoid damaging the silicon wafers during the process of entering and exiting the process chamber, in other embodiments, the transfer device 200 can further comprise a set of distributed wafer plates 230, each set of wafer plates 230 comprising a plurality of wafer plates 230 for carrying silicon wafers, and the plurality of wafer plates 230 in each set of wafer plates 230 are distributed with a gap between adjacent wafer plates 230 in the carrying direction of the wafer plates 230. In this case, the first wafer plate robot 205 is used to transfer the wafer plates 230 carrying the unprocessed silicon wafers in sets between the first wafer plate temporary storage device 203 and the first process chamber 101. Specifically, the first wafer plate robot 205 is used to grasp the wafer plates 230 carrying the unprocessed silicon wafers in sets from the first wafer plate temporary storage device 203 and transfer the wafer plates 230 carrying the unprocessed silicon wafers in sets into the first process chamber 101. In this way, the wafer plates 230 carrying the unprocessed silicon wafers can be carried into the first process chamber 101 with the unprocessed silicon wafers in sets, and the first intrinsic amorphous silicon film layer can be deposited on the front surface of the unprocessed silicon wafers in the first process chamber 101.

[0112] In this case, the controller in the above-mentioned steps of controlling the first wafer plate robot 205 to transfer the unprocessed silicon wafers in sets into the first wafer plate temporary storage device 203 and then controlling the first wafer plate robot 205 to transfer the unprocessed silicon wafers in sets into the first process chamber 101 can comprise the following steps:

[0113] S111, the controller controls the first wafer plate robot 205 to transfer the unprocessed silicon wafers in sets into the first wafer plate temporary storage device 203 and then controls the first wafer plate robot 205 to transfer the unprocessed silicon wafers in sets into the first process chamber 101 can comprise the following steps:

[0114] S112, the controller controls the first wafer plate robot 205 to transfer the wafer plates 230 carrying the unprocessed silicon wafers in sets from the first wafer plate temporary storage device 203 into the first process chamber 101.

[0115] As described in one of the above embodiments, in a stacked chamber structure, the fourth process chamber 104 is stacked on the first process chamber 101. Since the silicon wafer becomes a finished silicon wafer after being processed by the fourth process chamber 104, and the finished silicon wafer can be temporarily stored on the first wafer plate temporary storage device 203, based on this, in a further embodiment, the first wafer plate robot 205 is also used to transport the wafer plate 230 carrying the finished silicon wafer between the fourth process chamber 104 and the first wafer plate temporary storage device 203 in batches. In this case, the first wafer plate robot 205 is not only used to transport the wafer plate 230 carrying the unprocessed silicon wafer from the first wafer plate temporary storage device 203 to the first process chamber 101 in batches, but also used to transport the wafer plate 230 carrying the silicon wafer processed by the fourth process chamber 104 (i.e. the finished silicon wafer) from the fourth process chamber 104 to the first wafer plate temporary storage device 203 in batches. In this way, the transportation of the wafer plate 230 carrying the silicon wafer between the first wafer plate temporary storage device 203 and the first process chamber 101 and between the fourth process chamber 104 and the first wafer plate temporary storage device 203 can share the first wafer plate robot 205, so that a dedicated robot does not need to be configured for the wafer plate 230 carrying the unprocessed silicon wafer between the first wafer plate temporary storage device 203 and the first process chamber 101, and a dedicated robot does not need to be configured for the wafer plate 230 carrying the finished silicon wafer between the fourth process chamber 104 and the first wafer plate temporary storage device 203. In this way, the transportation device 200 can be simplified, thereby facilitating the reduction of the cost of the semiconductor process equipment. At the same time, since the first wafer plate robot 205 can be shared, the components of the transportation device 200 can also be reduced, thereby facilitating the reduction of the floor space of the transportation device 200, and ultimately facilitating the reduction of the floor space of the semiconductor process equipment.

[0116] As described above, the transportation device 200 includes wafer plates 230 distributed in batches, and the number of batches of wafer plates 230 is not limited by the embodiments of the present application. As described above, considering that the fourth process chamber 104 is prone to contamination during processing, in order to avoid adverse effects on the processing of other process chambers, in one embodiment, the fourth process chamber 104 can be configured with two batches of wafer plates 230, which can be considered as a first batch of wafer plates 230 and a second batch of wafer plates 230. These two sets of wafer plates 230 only enter and exit the fourth process chamber 104 and will not enter and exit other process chambers, thereby avoiding contamination. The two batches of wafer plates 230 matched with the fourth process chamber 104 can be used in the following way: one is in the fourth process chamber 104 for processing, the other is in the first wafer plate temporary storage device 203 to prepare for unloading the finished silicon wafer or the other is in the second wafer plate temporary storage device 204 to receive the silicon wafer that has been flipped after being processed by the third process chamber 103.

[0117] As mentioned above, since the wafers need to be flipped over to enter the second process chamber 102 after being processed by the first process chamber 101, in one embodiment, the first process chamber 101 can be equipped with two sets of wafer plates 230, which can be considered as a third set of wafer plates 230 and a fourth set of wafer plates 230. The two sets of wafer plates 230 are only used for entering and exiting the first process chamber 101.

[0118] Since the wafers do not need to be flipped over to enter the third process chamber 103 after being processed by the second process chamber 102, the second process chamber 102 and the third process chamber 103 can be equipped with one set of wafer plates 230, respectively, i.e., a fifth set of wafer plates 230 and a sixth set of wafer plates 230. The second process chamber 102 and the third process chamber 103 can share the set of wafer plates 230, i.e., the fifth set of wafer plates 230 and the sixth set of wafer plates 230 can enter and exit the second process chamber 102 and the third process chamber 103 without being exclusively used by the second process chamber 102 and the third process chamber 103.

[0119] In one specific embodiment, the transport device disclosed in the embodiments of the present application can be equipped with six sets of wafer plates 230, i.e., the first set of wafer plates 230, the second set of wafer plates 230, the third set of wafer plates 230, the fifth set of wafer plates 230, and the sixth set of wafer plates 230 mentioned above, so as to achieve good operation of the transport device 200.

[0120] The transmission device 200 disclosed by the embodiment of the present application can further comprise a second wafer plate temporary storage device 204, which has the same function as the first wafer plate temporary storage device 203 and is essentially a device for temporarily storing wafers. The wafers processed by the first process chamber 101 or the wafers processed by the third process chamber 103 can be temporarily stored on the second wafer plate temporary storage device 204, thereby providing conditions for the wafer flipping operation before the wafer enters the second process chamber 102 or before the wafer enters the fourth process chamber 104. In this case, there is wafer transmission between the second wafer plate temporary storage device 204 and the first process chamber 101, and there is wafer transmission between the second wafer plate temporary storage device 204 and the fourth process chamber 104. Based on this, in a further embodiment, the first wafer plate robot 205 is further used to group-transmit the wafer plates 230 carrying the wafers between the first process chamber 101 and the second wafer plate temporary storage device 204 and between the second wafer plate temporary storage device 204 and the fourth process chamber 104. Specifically, the first wafer plate robot 205 is used to group-grab the wafer plates 230 carrying the wafers processed by the first process chamber 101 from the first process chamber 101 and transmit them to the second wafer plate temporary storage device 204, and the first wafer plate robot 205 is also used to group-grab the wafer plates 230 carrying the wafers processed by the third process chamber 101 and flipped from the second wafer plate temporary storage device 204 and transmit them to the fourth process chamber 104.

[0121] This way can further expand the function of the first wafer plate robot 205, so that the first wafer plate robot 205 can be better shared, thereby eliminating the need to configure a dedicated robot for the wafer plates 230 carrying the wafers processed by the first process chamber 101 between the second wafer plate temporary storage device 204 and the first process chamber 101, and eliminating the need to configure a dedicated robot for the wafer plates 230 carrying the wafers processed by the third process chamber 103 and flipped between the fourth process chamber 104 and the second wafer plate temporary storage device 204. This way can further simplify the structure of the transmission device 200, thereby further facilitating the reduction of the cost of the semiconductor process equipment. At the same time, since the first wafer plate robot 205 can be further shared, the constituent components of the transmission device 200 can be further reduced, thereby further facilitating the reduction of the floor area of the transmission device 200, and ultimately further facilitating the reduction of the floor area of the semiconductor process equipment.

[0122] In the case that the transport device 200 comprises the first wafer plate temporary storage device 203 and the first wafer plate robot 205, the first wafer plate temporary storage device 203 can temporarily store the wafer plate 230 carrying the silicon wafers processed by the fourth process chamber 104, and the first wafer plate robot 205 is further configured to groupingly transport the wafer plate 230 carrying the silicon wafers processed by the fourth process chamber 104 from the fourth process chamber 104 to the first wafer plate temporary storage device 203, based on which the controller can control the semiconductor process equipment to further perform the following steps after S140:

[0123] S150, control the first wafer plate robot 205 to groupingly take out the wafer plate 230 carrying the silicon wafers processed by the fourth process chamber 104 from the fourth process chamber 104 and place the wafer plate 230 on the first wafer plate temporary storage device 203. In this way, the processed silicon wafers are indirectly transported from the fourth process chamber 104 to the first wafer plate temporary storage device 203 by transferring the wafer plate 230.

[0124] The transport device 200 disclosed in the embodiments of the present application can further comprise a flower basket loading and unloading device 260. The flower basket loading and unloading device 260 is configured to unload the unprocessed silicon wafers carried by the flower basket on the transport vehicle (for example, the AGV vehicle) 300, and further configured to transfer the processed silicon wafers to the flower basket on the transport vehicle 300 to realize loading. The flower basket loading and unloading device 260 is prior art, and the process, principle of loading and unloading of the flower basket loading and unloading device 260 and the structure of the flower basket loading and unloading device 260 are all known technologies, which will not be described here.

[0125] In the case that the transport device 200 comprises the flower basket loading and unloading device 260, S111 can specifically comprise:

[0126] S1111, the controller controls the first silicon wafer robot 201 to groupingly transport the unprocessed silicon wafers from the flower basket loading and unloading device 260 to the wafer plates 230 distributed in the first wafer plate temporary storage device 203.

[0127] Since the flower basket loading and unloading device 260 can also receive the processed silicon wafers, the controller can control the semiconductor process equipment to further perform the following steps after S150:

[0128] S160, control the first silicon wafer robot 201 to groupingly take out the processed silicon wafers from the first wafer plate temporary storage device 203 and transport the processed silicon wafers to the flower basket loading and unloading device 260.

[0129] It is known from the above process steps that the first process chamber 101 deposits a first intrinsic amorphous silicon film layer on the front side of the silicon wafer, and the second process chamber 102 deposits a second intrinsic amorphous silicon film layer on the back side of the silicon wafer. Therefore, during the transmission of the silicon wafer from the first process chamber 101 to the second process chamber 102, the front side of the silicon wafer needs to be turned into the back side, so as to prepare for the subsequent deposition of the second intrinsic amorphous silicon film layer on the back side of the silicon wafer in the second process chamber 102. Similarly, the third process chamber 103 deposits an N-type crystalline silicon or amorphous silicon film layer on the second intrinsic amorphous silicon film layer deposited on the back side of the silicon wafer, and the fourth process chamber 104 deposits a P-type crystalline silicon or amorphous silicon film layer on the first intrinsic amorphous silicon film layer deposited on the front side of the silicon wafer. Therefore, during the transmission of the silicon wafer from the third process chamber 103 to the fourth process chamber 104, the back side of the silicon wafer needs to be turned into the front side, so as to prepare for the subsequent deposition of the P-type crystalline silicon or amorphous silicon film layer on the front side of the silicon wafer in the fourth process chamber 104.

[0130] Based on this, the transmission device 200 disclosed in the embodiment of the present application can further include a second silicon wafer manipulator 202 and a second wafer plate manipulator 206. The second silicon wafer manipulator 202 is used to turn over the silicon wafer processed by the first process chamber 101 or the silicon wafer processed by the third process chamber 103, which is temporarily stored on the second wafer plate temporary storage device 204, so as to prepare for the silicon wafer to enter the second process chamber 102 or the fourth process chamber 104.

[0131] The second wafer plate manipulator 206 can directly take and place the silicon wafer, so as to transport the silicon wafer processed by the first process chamber 101 and turned over from the second wafer plate temporary storage device 204 to the second process chamber 102. In order to avoid damaging the silicon wafer during the process of entering and exiting the process chamber, in other embodiments, the second wafer plate manipulator 206 is at least used to transport the wafer plate 230 carrying the silicon wafer processed by the first process chamber 101 and turned over in groups between the second wafer plate temporary storage device 204 and the second process chamber 102, so as to indirectly realize the transmission of the silicon wafer processed by the first process chamber 101 and turned over from the second wafer plate temporary storage device 204 to the second process chamber 102.

[0132] In the case where the transmission device 200 includes the second silicon wafer manipulator 202 and the second wafer plate manipulator 206, the controller can be in communication connection with the second silicon wafer manipulator 202 and the second wafer plate manipulator 206 respectively, so as to control the second silicon wafer manipulator 202 and the second wafer plate manipulator 206. The controller can control the semiconductor process equipment to perform S120 as follows:

[0133] S121, control the first wafer plate robot 205 to move the wafer plate 230 carrying the wafers processed by the first process chamber 101 out of the first process chamber 101 and to the second wafer plate temporary storage device 204 in batches;

[0134] S122, control the second wafer robot 202 to flip the wafers processed by the first process chamber 101 and to place the wafers processed by the first process chamber 101 on the wafer plates 230 distributed in batches in the second wafer plate temporary storage device 204 in batches after flipping;

[0135] S123, control the second wafer plate robot 206 to transfer the wafer plate 230 carrying the wafers processed by the first process chamber 101 and flipped from the second wafer plate temporary storage device 204 to the second process chamber 102 in batches.

[0136] As described above, the second wafer robot 202 is used to take and place wafers on the second wafer plate temporary storage device 204 and to flip the wafers. Similar to the first wafer robot 201, in one embodiment, the second wafer robot 202 can be a clamping robot, that is, the wafer is gripped by the clamping robot or is placed by releasing the clamping. The clamping robot can clamp the edge of the wafer, so as to realize the flipping of the wafer by rotating the clamping robot itself. Specifically, the clamping robot clamps the wafers in batches by clamping, and then rotates itself to realize the flipping of the wafers, and then places the wafers in batches on the wafer plates 230 distributed in batches in the second wafer plate temporary storage device 204 after flipping. The clamping force of the clamping robot is not easy to control, and the wafer is easy to be damaged in the process of clamping and placing. Moreover, in the process of taking and placing the wafers in batches, it is difficult to unify the clamping force of the clamping robot on the wafers taken in batches, and finally the stability of taking and placing the wafers is poor.

[0137] In another embodiment, the second wafer robot 202 can also adopt a vacuum robot, which realizes the gripping of the wafer by vacuum adsorption or the placing of the wafer by releasing the vacuum. The damage of the wafer by the vacuum robot is smaller, so that the damage of the wafer by the transmission device 200 in the transmission process is smaller, and finally the yield of the wafer after processing is improved. The vacuum robot adsorbs the front or back surface of the wafer, so as to realize the transmission of the wafer.

[0138] In this case, the transfer device 200 disclosed by the embodiments of the present application can further comprise a flip temporary storage device 250. In one embodiment, the second wafer robot 202 is a vacuum robot. The second wafer robot 202 is used to transfer the wafers in groups between the second wafer plate temporary storage device 204 and the flip temporary storage device 250, so as to realize the flip operation required by the process of the wafers. Specifically, after the first intrinsic amorphous silicon thin film layer is deposited on the front side of the wafer by the first process chamber 101, the second wafer robot 202 is used to grab the wafer after the process of the first process chamber 101 in groups by vacuum adsorbing the back side of the wafer, and transport the wafer in groups from the wafer plate 230 in groups in the second wafer plate temporary storage device 204 to the flip temporary storage device 250, and temporarily store the wafer to be flipped after the process of the first process chamber 101 on the flip temporary storage device 250. Then, the second wafer robot 202 grabs the wafer after the process of the first process chamber 101 from the flip temporary storage device 250 by vacuum adsorbing the front side of the wafer (at this time, the vacuum adsorption is actually the first intrinsic amorphous silicon thin film layer on the front side of the wafer), and transports the wafer in groups from the flip temporary storage device 250 to the wafer plate 230 in groups in the second wafer plate temporary storage device 204, so as to finally realize the flip operation of the wafer.

[0139] In the embodiments of the present application, the flip temporary storage device 250 is used to temporarily store the wafer, and when the wafer is temporarily stored on the flip temporary storage device 250, the front side and the back side of the wafer can be exposed for selective grabbing by the second wafer robot 202. For example, the flip temporary storage device 250 can be provided with a slot for inserting the edge of the wafer, and the slot is inserted into the edge of the wafer to ensure the placement of the wafer on the flip temporary storage device 250, while the slot does not cover the front side and the back side of the wafer. The embodiments of the present application do not limit the specific structure of the flip temporary storage device 250, as long as the front side and the back side of the wafer can be exposed for grabbing by the second wafer robot 202 by vacuum adsorption after the wafer is placed on the flip temporary storage device 250.

[0140] After the N-type crystalline silicon or amorphous silicon thin film layer is deposited on the second intrinsic amorphous silicon thin film layer on the back surface of the silicon wafer in the third process chamber 103, the P-type crystalline silicon or amorphous silicon thin film layer needs to be deposited on the first intrinsic amorphous silicon thin film layer on the front surface of the silicon wafer in the fourth process chamber 104. In this case, the second wafer robot 202 is used to pick up the silicon wafer processed in the third process chamber 103 by vacuum adsorbing the front surface of the silicon wafer (at this time, the first intrinsic amorphous silicon thin film layer on the front surface of the silicon wafer is actually vacuum adsorbed), and transport the silicon wafer from the group of the carrier plates 230 in the second carrier plate temporary storage device 204 to the turnover temporary storage device 250 in groups, and temporarily store the silicon wafer to be turned over in the third process chamber 103 on the turnover temporary storage device 250, and then the second wafer robot 202 picks up the silicon wafer processed in the third process chamber 103 by vacuum adsorbing the back surface of the silicon wafer (at this time, the N-type crystalline silicon or amorphous silicon thin film layer on the back surface of the silicon wafer is actually vacuum adsorbed), and transport the silicon wafer from the turnover temporary storage device 250 to the group of the carrier plates 230 in the second carrier plate temporary storage device 204, and finally realize the turnover operation of the silicon wafer.

[0141] In an optional embodiment, the second wafer robot 202 can be arranged between the turnover temporary storage device 250 and the second carrier plate temporary storage device 204. This kind of distribution in the middle is conducive to the cooperation of the second wafer robot 202 with the turnover temporary storage device 250 and the second carrier plate temporary storage device 204, and thus more easily realizes the transmission of the silicon wafer in the turnover process. Considering that the second wafer robot 202 generally has great flexibility, in other embodiments, the second wafer robot 202 can not be arranged between the turnover temporary storage device 250 and the second carrier plate temporary storage device 204. The embodiments of the present application do not limit the specific arrangement position of the second wafer robot 202.

[0142] In the case where the transmission device 200 includes the turnover temporary storage device 250, the controller is configured to control the semiconductor process equipment to perform the control of the second wafer robot 202 to pick up the silicon wafer processed in the first process chamber 101 in groups from the second carrier plate temporary storage device 204 for turnover in S122 according to the following steps:

[0143] S1221, control the second wafer robot 202 to pick up the back surface of the silicon wafer processed in the first process chamber 101 from the second carrier plate temporary storage device 204 in groups, and place it on the turnover temporary storage device 250;

[0144] S1222, control the second wafer robot 202 to pick up the front surface of the silicon wafer processed in the first process chamber 101 and placed on the turnover temporary storage device 250 in groups, and place it on the carrier plates 230 distributed in groups on the second carrier plate temporary storage device 204 to complete the turnover.

[0145] As described in one of the above embodiments, the third process chamber 103 is stacked on the second process chamber 102 in a stack chamber structure. Based on this, in a further embodiment, the second wafer plate robot 206 can also be used to transport the wafer plates 230 carrying the silicon wafers in groups between the second process chamber 102 and the third process chamber 103. Specifically, the second wafer plate robot 206 is used to grab the wafer plates 230 carrying the silicon wafers processed by the second process chamber 102 in groups and deliver them into the third process chamber 103.

[0146] As described above, the silicon wafers processed by the third process chamber 103 are temporarily stored in the second wafer plate temporary storage device 204. Based on this, in a further embodiment, the second wafer plate robot 206 is also used to transport the wafer plates 230 carrying the silicon wafers in groups between the third process chamber 103 and the second wafer plate temporary storage device 204. Specifically, the second wafer plate robot 206 is used to grab the wafer plates 230 carrying the silicon wafers processed by the third process chamber 103 in groups and deliver them into the second wafer plate temporary storage device 204.

[0147] This way can expand the function of the second wafer plate robot 206, so that the second wafer plate robot 206 can be better shared, and thus there is no need to configure a dedicated robot for the wafer plates 230 carrying the silicon wafers processed by the second process chamber 102 between the second process chamber 102 and the third process chamber 103, and there is no need to configure a dedicated robot for the wafer plates 230 carrying the silicon wafers processed by the third process chamber 103 between the third process chamber 103 and the second wafer plate temporary storage device 204. This way can further simplify the structure of the transport device 200, and thus further facilitate reducing the cost of the semiconductor process equipment. At the same time, since the first wafer plate robot 205 can be further shared, the components of the transport device 200 can also be further reduced, and thus further facilitate reducing the floor space of the transport device 200, and ultimately further facilitate reducing the floor space of the semiconductor process equipment.

[0148] In the case where the transport device 200 includes the second wafer plate robot 206, the second silicon wafer robot 202, the second wafer plate temporary storage device 204, and the first wafer plate robot 205, the controller can control the semiconductor process equipment to perform S130 by the following steps:

[0149] S131, control the second wafer plate robot 206 to take out the wafer plates 230 carrying the silicon wafers processed by the third process chamber 103 from the third process chamber 103 in groups and transport them onto the second wafer plate temporary storage device 204.

[0150] S132, control the second wafer robot 202 to flip the wafers on the second wafer cassette temporary storage device 204 after the third process chamber 103 process in groups.

[0151] S133, control the first wafer cassette robot 205 to transfer the wafer cassette 230 carrying the wafers after the third process chamber 103 process and flipping from the second wafer cassette temporary storage device 204 to the fourth process chamber 104.

[0152] In the embodiment where the transfer device 200 further comprises a flipping temporary storage device 250, the controller can be configured to control the semiconductor processing equipment to perform the control of the second wafer robot 202 to flip the wafers on the second wafer cassette temporary storage device 204 after the third process chamber 103 process in groups according to the following steps S132:

[0153] S1321, control the second wafer robot 202 to grab the front side of the wafers on the second wafer cassette temporary storage device 204 after the third process chamber 103 process in groups and place them on the flipping temporary storage device 250;

[0154] S1322, control the second wafer robot 202 to grab the back side of the wafers after the third process chamber 103 process and placed on the flipping temporary storage device 250 in groups and place them on the wafer cassette 230 distributed in groups on the second wafer cassette temporary storage device 204 to complete the flipping.

[0155] The first wafer cassette robot 205 can be of various types. Specifically, the first wafer cassette robot 205 can adopt various existing robots capable of moving (e.g. moving or rotating) in multiple directions to achieve flexible transportation. To facilitate the first wafer cassette robot 205 to better perform the multiple functions mentioned above, the first wafer cassette robot 205 can be opposite to the stack chamber structure where the first process chamber 101 is located. Such structure can enable the first wafer cassette robot 205 to realize the relative positions with the first process chamber 101 and the fourth process chamber 104 by lifting, thereby facilitating the wafer cassette 230 carrying the wafers to enter or exit the first process chamber 101 or the fourth process chamber 104.

[0156] Similarly, in order to make the second carrier plate robot 206 more easily perform the multiple functions mentioned above, the second carrier plate robot 206 can be opposite to the stack chamber structure in which the second process chamber 102 is located, which can make the second carrier plate robot 206 be opposite to the second process chamber 102 and the third process chamber 103 by lifting, and thus make the carrier plate 230 carrying the silicon wafer more easily enter or exit the second process chamber 102 or the third process chamber 103.

[0157] In further embodiments, the first carrier plate temporary storage device 203 can be located on the side of the first carrier plate robot 205 opposite to the second carrier plate robot 206, and the second carrier plate temporary storage device 204 can be located between the first carrier plate robot 205 and the second carrier plate robot 206. Such a distribution of the first carrier plate temporary storage device 203 and the second carrier plate temporary storage device 204 can be more compact, and thus make the first carrier plate robot 205 and the second carrier plate robot 206 more easily perform multiple functions.

[0158] In further embodiments, based on the fact that the transfer device 200 includes the flower basket loading and unloading device 260, the flower basket loading and unloading device 260 can be opposite to the first carrier plate temporary storage device 203, and the first silicon wafer robot 201 can be located between the flower basket loading and unloading device 260 and the first carrier plate temporary storage device 203. Such a distribution can make the first silicon wafer robot 201 more easily cooperate with the first carrier plate temporary storage device 203 and the flower basket loading and unloading device 260, respectively.

[0159] In further embodiments, based on the fact that the transfer device 200 includes the flip temporary storage device 250, the flip temporary storage device 250 can be opposite to the second carrier plate temporary storage device 204, and the second silicon wafer robot 202 can be located between the second carrier plate temporary storage device 204 and the flip temporary storage device 250. Such a distribution can make the second silicon wafer robot 202 more easily cooperate with the second carrier plate temporary storage device 204 and the flip temporary storage device 250, respectively.

[0160] The semiconductor process equipment disclosed in the embodiments of the present application can further include a protection cabin 400, and the second silicon wafer robot 202, the second carrier plate temporary storage device 204, the first carrier plate robot 205 and the second carrier plate robot 206 are arranged in the protection cabin 400. The protection cabin 400 can provide protection while reducing the pollution of the silicon wafer, and ensure the safety of the silicon wafer during the transmission between the above-mentioned devices and the process chambers of the chamber module 100. In the embodiments in which the transfer device 200 includes the flip temporary storage device 250, the flip temporary storage device 250 can also be arranged in the protection cabin 400.

[0161] In one embodiment, the protection chamber 400 can provide a single space, and the second wafer robot 202, the second carrier plate temporary storage device 204, the first carrier plate robot 205 and the second carrier plate robot 206 are arranged in the single space. In this way, the protection chamber 400 does not need a complicated structure, which is conducive to simplifying the structure of the semiconductor processing equipment.

[0162] In another embodiment, the protection chamber 400 can include a first sub-chamber 410, a second sub-chamber 420, a first sealing door 430 and a second sealing door 440.

[0163] The first carrier plate robot 205, the second carrier plate temporary storage device 204, the second wafer robot 202 and the flip temporary storage device 250 can be arranged in the first sub-chamber 410. The second carrier plate robot 206 is located in the second sub-chamber 420.

[0164] The protection chamber 400 is provided with a first carrier plate transmission port 401 communicating with the first sub-chamber 410 and a second carrier plate transmission port 402 communicating with the first sub-chamber 410 and the second sub-chamber 420. The first carrier plate transmission port 401 is used for the first carrier plate robot 205 to pass through to pick up the carrier plate 230 carrying the unprocessed wafer from the first carrier plate temporary storage device 203 or to transfer the carrier plate 230 carrying the wafer processed by the fourth process chamber 104 to the first carrier plate temporary storage device 203.

[0165] The second carrier plate transmission port 402 is used for the second carrier plate robot 206 to pass through to pick up the carrier plate 230 carrying the wafer processed by the first process chamber 101 and flipped from the second carrier plate temporary storage device 204 or to transfer the carrier plate 230 carrying the wafer processed by the third process chamber 103 to the second carrier plate temporary storage device 204.

[0166] The first sealing door 430 cooperates with the first carrier plate transmission port 401 to control the opening and closing of the first carrier plate transmission port 401. When it is needed to transfer the wafer through the first carrier plate transmission port 401, the first sealing door 430 is opened. When it is not needed to transfer the wafer through the first carrier plate transmission port 401, the first sealing door 430 is closed to block the first carrier plate transmission port 401, thereby ensuring the environment in the first sub-chamber 410.

[0167] The second sealing door 440 cooperates with the second carrier plate transmission port 402 to control the opening and closing of the second carrier plate transmission port 402. When it is needed to transfer the wafer through the second carrier plate transmission port 402, the second sealing door 440 is opened. When it is not needed to transfer the wafer through the second carrier plate transmission port 402, the second sealing door 440 is closed to block the second carrier plate transmission port 402, thereby ensuring the environment in the second sub-chamber 420.

[0168] In the embodiments of the present application, the first sub-chamber 410 and the second sub-chamber 420 can be nitrogen-filled chambers or vacuum chambers. In the embodiments in which the first sub-chamber 410 and the second sub-chamber 420 are nitrogen-filled chambers, further, the nitrogen concentration in the second sub-chamber 420 is at least 99.9%, and the nitrogen concentration in the first sub-chamber 410 is at least 95%.

[0169] Since the carrying of the wafer plate 230 in and out of the process chamber occurs in the first sub-chamber 410 and the second sub-chamber 420, and the first sub-chamber 410 and the second sub-chamber 420 can be isolated from the external environment of the semiconductor process equipment, the first sub-chamber 410 and the second sub-chamber 420 can also perform heat preservation on the wafer, so that the temperature of the wafer does not drop too quickly after being output from one process chamber, so that the wafer still has a relatively high temperature when entering the next process chamber, and finally the preheating time of the next process chamber on the wafer can be reduced, which is beneficial to improve the process efficiency and achieve the purpose of improving the production capacity of the semiconductor process equipment.

[0170] As mentioned above, in one embodiment, the transfer device 200 can comprise a flower basket loading and unloading device 260, and the first silicon wafer robot 201 can be configured to transfer the unprocessed silicon wafers or the processed silicon wafers in groups between the flower basket loading and unloading device 260 and the first wafer plate temporary storage device 203. In a further embodiment, the protective cabin 400 disclosed by the embodiments of the present application can further comprise a third sub-cabin 450, and the first sub-cabin 410 can be located between the third sub-cabin 450 and the second sub-cabin 420. The first wafer plate transfer port 401 is configured to communicate the third sub-cabin 450 and the first sub-cabin 410. The third sub-cabin 450 can be provided with a silicon wafer transfer port 403, and the flower basket loading and unloading device 260, the first silicon wafer robot 201 and the first wafer plate temporary storage device 203 can be sequentially arranged in the third sub-cabin 450 in a direction away from the silicon wafer transfer port 403. The silicon wafer transfer port 403 is configured to be docked with the transport vehicle (e.g. AGV vehicle) 300 mentioned above. The transport vehicle 300 carries a first flower basket and unprocessed silicon wafers on the first flower basket. When the transport vehicle 300 runs to a position docked with the silicon wafer transfer port 403, the first flower basket carrying the unprocessed silicon wafers is received by the flower basket loading and unloading device 260 and enters the third sub-cabin 450 through the silicon wafer transfer port 403, and the flower basket loading and unloading device 260 can further unload the unprocessed silicon wafers on the first flower basket, so as to be subsequently grabbed by the first silicon wafer robot 201. The transport vehicle 300 also carries a second flower basket, and the second flower basket carries processed silicon wafers. When the transport vehicle 300 runs to a position docked with the silicon wafer transfer port 403, the first silicon wafer robot 201 grabs the processed silicon wafers on the wafer plates 230 in groups carried in the first wafer plate temporary storage device 203 and transports them to the flower basket loading and unloading device 260, and the flower basket loading and unloading device 260 loads the processed silicon wafers on the second flower basket and transfers the second flower basket carrying the processed silicon wafers to the transport vehicle 300 through the silicon wafer transfer port 403.

[0171] The third sub-cabin 450 can protect the flower basket loading and unloading device 260, the first silicon wafer robot 201 and the first wafer plate temporary storage device 203 arranged therein. Since the silicon wafers will not enter the process chamber of the chamber module 100 from the third sub-cabin 450, the third sub-cabin 450 can be an atmospheric cabin.

[0172] The protection cabin 400 disclosed by the embodiment of the present application can further comprise a third sealing door cooperating with the wafer transfer port 403 to control the opening and closing of the wafer transfer port 403. In this case, the third sealing door is beneficial to form a sealed structure for the third sub-cabin 450, thereby ensuring the sealing of the third sub-cabin 450 when the wafer transfer port 403 is not docked with the transport vehicle 300. When the wafer transfer port 403 is docked with the transport vehicle 300, the third sealing door is opened. In this case, the transport vehicle 300 can be sealedly docked with the wafer transfer port 403, thereby ensuring the sealing of the third sub-cabin 450 when the wafer transfer port 403 is docked with the transport vehicle 300.

[0173] The semiconductor process equipment disclosed by the embodiment of the present application can comprise a plurality of wafer robots 240, which can comprise the first wafer robot 201 and the second wafer robot 202 mentioned above. The first wafer robot 201 and the second wafer robot 202 can have the same structure. In one embodiment, the wafer robot 240 can comprise a plurality of first robot fingers 241, a six-axis industrial robot 242 and a base 243. In each wafer robot 240, the plurality of first robot fingers 241 are spaced apart and fixed to the base 243. The base 243 is fixed to the free end of the six-axis industrial robot 242. Each wafer robot 240 comprises a plurality of first robot fingers 241, each of which can take and place a wafer during the taking and placing of wafers. Since each wafer robot 240 comprises a plurality of first robot fingers 241, each wafer robot 240 can simultaneously take and place a plurality of wafers, thereby achieving the purpose of taking and placing wafers in groups as described above.

[0174] When the wafer robot 240 is a clamping robot, the first robot finger 241 can be a clamping structure. When the wafer robot 240 is a vacuum robot, the first robot finger 241 can be a vacuum chuck, which can grasp a wafer by vacuum adsorbing the front or back surface of the wafer and release the wafer by releasing the vacuum.

[0175] The semiconductor process equipment disclosed in the embodiments of the present application can include a plurality of slide plate temporary storage devices 220, which can include the first slide plate temporary storage device 203 and the second slide plate temporary storage device 204 described above. The first slide plate temporary storage device 203 and the second slide plate temporary storage device 204 can have the same structure. The slide plate temporary storage device 220 can include a second frame body 221 and a second support block 222 arranged on the second frame body 221. Specifically, the second support block 222 can be fixed on the second frame body 221 by welding, bonding, clamping, connecting members, or the like. The second frame body 221 can have a plurality of slide plate temporary storage spaces, and each slide plate temporary storage space can be provided with a plurality of layers of second support blocks 222 distributed at intervals, and each layer of second support blocks 222 is used to support a slide plate 230. The plurality of layers of second support blocks 222 can support a plurality of layers of slide plates 230. As described above, the slide plates 230 are distributed in groups, and each group of slide plates 230 includes a plurality of slide plates 230, and each group of slide plates 230 is distributed in layers, that is, each slide plate 230 in each group of slide plates 230 is located in a different layer.

[0176] In further embodiments, the slide plate temporary storage device 220 can further include a first base 223 and a first rotating shaft 224, and the second frame body 221 is rotatably arranged on the first base 223 through the first rotating shaft 224. The second frame body 221 is provided with a wafer taking and placing opening facing a first direction and a slide plate taking and placing opening facing a second direction. The first direction can intersect the second direction. Specifically, the first direction can be perpendicular to the second direction.

[0177] The wafer taking and placing opening is used to cooperate with the first wafer mechanical hand 201 or the second wafer mechanical hand 202, and is used for the first wafer mechanical hand 201 to take and place wafers in groups on the first slide plate temporary storage device 203 or for the second wafer mechanical hand 202 to take and place wafers in groups on the second slide plate temporary storage device 204. The slide plate taking and placing opening is used to cooperate with the first slide plate mechanical hand 205 or the second slide plate mechanical hand 206, and is used for the first slide plate mechanical hand 205 to take and place slide plates 230 carrying wafers in groups on the first slide plate temporary storage device 203 or for the second slide plate mechanical hand 206 to take and place slide plates 230 carrying wafers in groups on the second slide plate temporary storage device 204.

[0178] The first base 223 can be placed on the ground in a factory building, and the second frame body 221 can be rotatably arranged on the first base 223 through the first rotating shaft 224, so that the second frame body 221 is rotated to adjust the orientations of the wafer taking and placing opening and the slide plate taking and placing opening, thereby flexibly adjusting the orientations of the wafer taking and placing opening and the slide plate taking and placing opening, and ultimately facilitating their respective relative positions with the wafer mechanical hand 240 or the slide plate mechanical hand 210 mentioned below.

[0179] The semiconductor process equipment disclosed in the embodiments of the present application can include a plurality of wafer plate manipulators 210, which can include a first wafer plate manipulator 205 and a second wafer plate manipulator 206. The first wafer plate manipulator 205 and the second wafer plate manipulator 206 have the same structure. In an embodiment, the wafer plate manipulator 210 can include a plurality of second mechanical fingers 212, which are arranged on the side of the wafer plate manipulator 210 facing the wafer plate loading and unloading port, and can take and place the wafer plates 230 loaded with silicon wafers in the wafer plate temporary storage device 220 in groups through the wafer plate loading and unloading port.

[0180] In the embodiments of the present application, the second mechanical fingers 212 can be clamping structures, vacuum suction structures or supporting structures. When the second mechanical fingers 212 are supporting structures, the wafer plates 230 loaded with silicon wafers can fall on the second mechanical fingers 212 by their own gravity to be supported by the second mechanical fingers 212 and be transported by following the movement of the second mechanical fingers 212.

[0181] In a more specific structure, the wafer plate manipulator 210 can further include a rotating driving part 214, a guide rail 215, a vertical driving part 216, a horizontal driving part 217 and a finger seat 211. The plurality of second mechanical fingers 212 can be fixed to the finger seat 211. The finger seat 211 is connected to the horizontal driving part 217, and the horizontal driving part 217 drives the horizontal movement of the finger seat 211. The vertical driving part 216 is connected to the horizontal driving part 217, and the vertical driving part 216 drives the vertical movement of the horizontal driving part 217, the finger seat 211 and the plurality of second mechanical fingers 212 along the guide rail 215. The guide rail 215 is connected to the rotating driving part 214, and the rotating driving part 214 drives the rotation of the guide rail 215 to rotate the plurality of second mechanical fingers 212 around a preset axis, which extends in the vertical direction. This structure can finally realize the horizontal or vertical movement of the second mechanical fingers 212, the rotation of the second mechanical fingers 212 around the vertical direction, and finally realize the taking, placing and transporting of the wafer plates 230 loaded with silicon wafers.

[0182] It is to be noted that, in the present document, the movement of the second mechanical finger 212 in the horizontal direction refers to the movement of the second mechanical finger 212 in the direction of approaching or moving away from the process chamber of the stack-type chamber structure opposite to the second mechanical finger 212, so as to realize the in-and-out movement of the wafer carrier 230 carrying the silicon wafer to the opposite process chamber. The process chamber can be a horizontal chamber, and the opening of the chamber body can be in the horizontal direction. The movement of the second mechanical finger 212 in the vertical direction refers to the movement of the second mechanical finger 212 in the vertical direction, so as to realize the height adjustment in the stacking direction of the stack-type chamber structure opposite to the second mechanical finger 212, and further realize the relative movement with the process chamber of the corresponding height, so as to prepare for the in-and-out movement of the wafer carrier 230 carrying the silicon wafer to the process chamber. The rotation of the second mechanical finger 212 around the vertical direction refers to the rotation of the second mechanical finger 212 around the vertical direction, so as to realize the group transmission of the wafer carrier 230 carrying the silicon wafer between the first wafer carrier temporary storage device 203 and the first process chamber 101, between the first process chamber 101 and the second wafer carrier temporary storage device 204, between the second wafer carrier temporary storage device 204 and the second process chamber 102, between the third process chamber 103 and the second wafer carrier temporary storage device 204, between the fourth process chamber 104 and the second wafer carrier temporary storage device 204, or between the fourth process chamber 104 and the first wafer carrier temporary storage device 203.

[0183] In order to reduce the space occupied by the horizontal movement, in an embodiment, the horizontal driving part 217 can be a telescopic driving mechanism, for example, the horizontal driving part 217 can be a hydraulic telescopic mechanism, a pneumatic telescopic mechanism, etc., and can also be other structures of telescopic driving mechanisms. In an embodiment, the horizontal driving part 217 can include a first horizontal guide rail 2171, a second horizontal guide rail 2172, a first sub-driving part 2173, and a second sub-driving part 2174. The first horizontal guide rail 2171 is fixedly connected with the vertical driving part 216. The second horizontal guide rail 2172 is slidably arranged on the first horizontal guide rail 2171. The first sub-driving part 2173 is connected between the first horizontal guide rail 2171 and the second horizontal guide rail 2172, and is used to drive the second horizontal guide rail 2172 to move horizontally along the first horizontal guide rail 2171. The finger seat 211 is slidably arranged on the second horizontal guide rail 2172. The second sub-driving part 2174 is connected between the second horizontal guide rail 2172 and the finger seat 211, and is used to drive the finger seat 211 to move horizontally along the second horizontal guide rail 2172.

[0184] As described above, the semiconductor process equipment disclosed by the embodiments of the present application comprises a first wafer robot 201, in an embodiment, the first wafer robot 201 can not only grab the wafers processed by the fourth process chamber 104 to unload, but also grab the wafers that have not been processed and transport them to the first wafer plate temporary storage device 203. The controller of the embodiments of the present application can control the first wafer robot 201 to grab the wafers processed by the fourth process chamber 104 to unload first, or grab the wafers that have not been processed to load first. In the specific design process, the inventors of the present application find that unloading the processed wafers as soon as possible is more conducive to improving the wafer transport efficiency, based on which, in an embodiment, the controller can control the semiconductor process equipment to perform the following steps:

[0185] S311, determining whether there are wafers processed by the fourth process chamber 104 on the first wafer plate temporary storage device 203;

[0186] S312, if yes, controlling the first wafer robot 201 to grab the wafers processed by the fourth process chamber 104 on the first wafer plate temporary storage device 203 in groups to unload;

[0187] S313, if no, controlling the first wafer robot 201 to grab the wafers that have not been processed in groups and transport them to the first wafer plate temporary storage device 203.

[0188] The controller realizes scheduling the first wafer robot 201 according to the order of S311-S313, so that the first wafer robot 201 takes grabbing the wafers processed by the fourth process chamber 104 on the first wafer plate temporary storage device 203 as the priority work object, which is conducive to improving the transport efficiency of the transport device 200.

[0189] In a further embodiment in which the transport device 200 further comprises a flower basket unloading device 260, the first wafer robot 201 can be arranged between the flower basket unloading device 260 and the first wafer plate temporary storage device 203, so as to be more conducive to cooperating with the flower basket unloading device 260 and the first wafer plate temporary storage device 203 respectively. In this case, wherein:

[0190] S312 can comprise: controlling the first wafer robot 201 to grab the wafers processed by the first wafer plate temporary storage device 203 in groups and transport them to the flower basket unloading device 260.

[0191] S313 can comprise: controlling the first wafer robot 201 to grab the wafers that have not been processed from the flower basket unloading device 260 in groups and transport them to the first wafer plate temporary storage device 203.

[0192] As described above, in one embodiment, the chamber module 100 comprises a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104 for processing the silicon wafer in sequence, the first process chamber 101 is used for depositing a first intrinsic amorphous silicon thin film layer on the front side of the silicon wafer, the fourth process chamber 104 is used for depositing a P-type crystalline silicon or amorphous silicon thin film layer on the first intrinsic amorphous silicon thin film layer of the front side of the silicon wafer, and the fourth process chamber 104 is stacked above the first process chamber 101; the conveying device 200 comprises a first wafer plate temporary storage device 203, a first wafer plate robot 205 and a second wafer plate temporary storage device 204. The first wafer plate robot 205 can be shared to perform multiple functions. In a specific process, the inventors of the present application found that the fourth process chamber 104 takes the longest time to deposit a P-type crystalline silicon or amorphous silicon thin film layer on the first intrinsic amorphous silicon thin film layer, which is the key to determining the production capacity of the entire semiconductor process equipment. Reducing the waiting time of the fourth process chamber 104 and quickly feeding and discharging the wafer plate 230 carrying the silicon wafer in the fourth process chamber 104 can improve the process efficiency and thus improve the production capacity of the semiconductor process equipment. Therefore, in order to improve the production capacity of the semiconductor process equipment, the controller controls the semiconductor process equipment to perform the following steps:

[0193] S321, determining whether the fourth process chamber 104 stores a silicon wafer processed by the fourth process chamber 104.

[0194] S322, if yes, controlling the first wafer plate robot 205 to group the silicon wafer processed by the fourth process chamber 104 and transmit it to the first wafer plate temporary storage device 203.

[0195] S323, if no, determining whether the second wafer plate temporary storage device 204 stores a silicon wafer processed by the third process chamber 103 and needs to enter the fourth process chamber 104.

[0196] S324, when the second wafer plate temporary storage device 204 stores the silicon wafer processed by the third process chamber 103 and needs to enter the fourth process chamber 104, controlling the first wafer plate robot 205 to group the silicon wafer stored on the second wafer plate temporary storage device 204 and processed by the third process chamber 103 and needs to enter the fourth process chamber 104 and transmit it to the fourth process chamber 104.

[0197] It should be noted that the silicon wafer processed by the third process chamber 103 and needing to enter the fourth process chamber 104 refers to the silicon wafer processed by the third process chamber 103 and flipped to prepare for processing in the fourth process chamber 104.

[0198] In a further embodiment, when there is no wafer on the second wafer boat temporary storage device 204 which has been processed by the third process chamber 103 and needs to be processed by the fourth process chamber 104, the controller can further control the semiconductor processing apparatus to perform the following steps:

[0199] S325, determining whether the first process chamber 101 stores the wafer processed by the first process chamber 101;

[0200] S326, if yes, controlling the first wafer boat robot 205 to transfer the wafer processed by the first process chamber 101 to the second wafer boat temporary storage device 204 in batches;

[0201] S327, if no, controlling the first wafer boat robot 205 to transfer the wafer not processed stored on the first wafer boat temporary storage device 202 to the first process chamber 101 in batches.

[0202] In this case, once there is no wafer on the second wafer boat temporary storage device 204 which has been processed by the third process chamber 103 and needs to be processed by the fourth process chamber 104, it means that the fourth process chamber 104 temporarily has no need for assistance, and the controller controls the first wafer boat robot 205 to preferentially take out the wafer boat 230 carrying the wafer processed by the first process chamber 101 from the first process chamber 101, and then input the wafer boat 230 carrying the wafer not processed into the first process chamber 101 to make the first process chamber 101 start processing as soon as possible.

[0203] As described above, in one embodiment, the semiconductor processing apparatus disclosed by the embodiments of the present application comprises a chamber module 100, a transfer device 200 and a controller, the chamber module 100 comprises a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104 which process the wafer in sequence, the first process chamber 101 is used for depositing a first intrinsic amorphous silicon film layer on the front surface of the wafer, the second process chamber 102 is used for depositing a second intrinsic amorphous silicon film layer on the back surface of the wafer, the third process chamber 103 is used for depositing an N-type crystalline silicon or amorphous silicon film layer on the second intrinsic amorphous silicon film layer, and the fourth process chamber 104 is used for depositing a P-type crystalline silicon or amorphous silicon film layer on the first intrinsic amorphous silicon film layer on the front surface of the wafer; the transfer device 200 comprises a second wafer boat temporary storage device 204 and a second wafer robot 202, and the controller controls the semiconductor processing apparatus to perform the following steps:

[0204] S327, determining whether the second wafer boat temporary storage device 204 stores the wafer which needs to be flipped after being processed by the third process chamber 103;

[0205] S328, if yes, controlling the second wafer robot 202 to pick up the wafer needing to be flipped after the process in the third process chamber 103 from the second wafer cassette temporary storage device 204 for flipping operation;

[0206] S329, if no, judging whether the wafer needing to be flipped after the process in the second process chamber 102 is stored in the second wafer cassette temporary storage device 204;

[0207] S330, when the wafer needing to be flipped after the process in the second process chamber 102 is stored in the second wafer cassette temporary storage device 204, controlling the second wafer robot 202 to pick up the wafer needing to be flipped after the process in the first process chamber 101 from the second wafer cassette temporary storage device 204 for flipping operation.

[0208] In the embodiment of the present application, the process time of the fourth process chamber 104 is the longest, the process time of the third process chamber 103 is the second longest, and the process time of the first process chamber 101 and the second process chamber 102 is the shortest.

[0209] Similarly, in order to reduce the waiting time of the process chamber with longer process time, it is beneficial to start the process with longer process time as soon as possible, thereby improving the process efficiency. Therefore, in the semiconductor process equipment with such structure, it is determined whether the wafer needing to be flipped after the process in the third process chamber 103 is stored in the second wafer cassette temporary storage device 204, and then the second wafer robot 202 is controlled to flip the wafer needing to be flipped after the process in the third process chamber 103, and then it is determined whether the wafer needing to be flipped after the process in the first process chamber 101 is stored in the second wafer cassette temporary storage device 204, and then the second wafer robot 202 is controlled to flip the wafer needing to be flipped after the process in the first process chamber 101. Such sequence of determination and flipping can give priority to the full work of the fourth process chamber 104, and then give priority to the full work of the third process chamber 103, thereby improving the productivity of the semiconductor process equipment and achieving the purpose of better sharing the second wafer robot 202.

[0210] In the embodiment of the transmission device 200 including the flipping temporary storage device 250, the second wafer robot 202 can be arranged between the flipping temporary storage device 250 and the second wafer cassette temporary storage device 204. In this case, the second wafer robot 202 can pick up the wafer needing to be flipped from the flipping temporary storage device 250 for flipping operation.

[0211] S328 can include: controlling the second wafer robot 202 to pick up the front side of the wafer which needs to be flipped after the third process in the third process chamber 103 from the second wafer boat temporary storage device 204 and transfer it to the flipping temporary storage device 250, and then controlling the second wafer robot 202 to pick up the back side of the wafer after the third process in the third process chamber 103 from the flipping temporary storage device 250 and transfer it to the second wafer boat temporary storage device 204.

[0212] S330 can include: controlling the second wafer robot 202 to pick up the back side of the wafer which needs to be flipped after the first process in the first process chamber 101 from the second wafer boat temporary storage device 204 and transfer it to the flipping temporary storage device 250, and then controlling the second wafer robot 202 to pick up the front side of the wafer after the first process in the first process chamber 101 from the flipping temporary storage device 250 and transfer it to the second wafer boat temporary storage device 204.

[0213] In one embodiment, the semiconductor process equipment disclosed by the embodiment of the present application can include a chamber module 100, a transfer device 200 and a controller, the chamber module 100 includes a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104 which sequentially process the wafer, the second process chamber 102 is used for depositing a second intrinsic amorphous silicon film layer on the back side of the wafer, and the third process chamber 103 is used for depositing an N-type crystalline silicon or amorphous silicon film layer on the second intrinsic amorphous silicon film layer; the transfer device 200 includes a second wafer boat robot 206 and a second wafer boat temporary storage device 204; the controller controls the semiconductor process equipment to perform the following steps:

[0214] S331, judging whether the wafer after the third process in the third process chamber 103 is stored in the third process chamber 103;

[0215] S332, if yes, controlling the second wafer boat robot 206 to pick up the wafer after the third process in the third process chamber 103 and transfer it to the second wafer boat temporary storage device 204;

[0216] S333, if no, judging whether the wafer after the second process in the second process chamber 102 is stored in the second process chamber 102;

[0217] S334, when the wafer after the second process in the second process chamber 102 is stored in the second process chamber 102, controlling the second wafer boat robot 206 to pick up the wafer after the second process in the second process chamber 102 and transfer it to the third process chamber 103.

[0218] As described above, the process processing time of the silicon wafer in the third process chamber 103 is longer than the process processing time of the silicon wafer in the second process chamber 102, in this way, the priority is still determined whether the silicon wafer processed by the third process chamber 103 is stored in the third process chamber 103, and then when the silicon wafer processed by the third process chamber 103 is stored in the third process chamber 103, the second wafer plate robot 206 is controlled to group the silicon wafer processed by the third process chamber 103 and transmit it to the second wafer plate temporary storage device 204, so that the process of the next batch of silicon wafer in the third process chamber 103 can be prepared in time, which is beneficial to reduce the waiting time of the third process chamber 103, and achieve the purpose of improving the production capacity of the semiconductor process equipment by fully utilizing the third process chamber 103 for process.

[0219] In further embodiments, the controller can further control the semiconductor process equipment to perform the following steps:

[0220] S335, when the silicon wafer processed by the second process chamber 102 is not stored in the second process chamber 102, determining whether the silicon wafer processed by the first process chamber 101 and needing to enter the second process chamber 102 is stored on the second wafer plate temporary storage device 204;

[0221] S336, when the silicon wafer processed by the first process chamber 101 and needing to enter the second process chamber 102 is stored on the second wafer plate temporary storage device 204, controlling the second wafer plate robot 206 to group the silicon wafer processed by the first process chamber 101 and needing to enter the second process chamber 102.

[0222] As described above, the transmission device 200 disclosed by the embodiments of the present application can also include a group of distributed wafer plates 230, the wafer plates 230 are used to carry silicon wafers, and the first wafer plate robot 205 and the second wafer plate robot 206 realize the transmission of the silicon wafer by group grabbing the wafer plates 230 carrying the silicon wafers.

[0223] As described above, the chamber module 100 disclosed by the embodiments of the present application comprises a plurality of process chambers, which comprise a first process chamber 101, a second process chamber 102, a third process chamber 103 and a fourth process chamber 104 capable of performing different film deposition processes on silicon wafers. As described above, the first wafer plate robot 205 and the second wafer plate robot 206 can groupingly grab the wafer plate 230 carrying silicon wafers in and out of the corresponding process chamber. That is, in one embodiment, the process chamber disclosed by the embodiments of the present application can perform a process on the silicon wafers on the group of wafer plates 230 entering into the process chamber, that is, can perform a process on the group of silicon wafers entering into the process chamber. The process chamber can simultaneously process the silicon wafers on the group of wafer plates 230 distributed in the carrying direction of the wafer plates 230, which can improve the process efficiency of the process chamber, and thus is conducive to improving the production capacity of the semiconductor process equipment.

[0224] In order to be able to cooperate with the group of wafer plates 230 carrying silicon wafers to perform a process on the group of silicon wafers, the process chamber disclosed by the embodiments of the present application can comprise a chamber body 110, a heater 120 and a lifting mechanism 130.

[0225] The chamber body 110 is a peripheral component of the process chamber, which not only can form a process space of the process chamber, but also can provide a mounting base for other at least partial constituent components of the chamber body 110.

[0226] The heater 120 is arranged in the chamber body 110, and comprises a plurality of layers of heating plates 121 distributed at intervals. The heating plates 121 are used to heat the wafer plates 230 carrying silicon wafers. In a specific process, the heating plates 121 carry the wafer plates 230 and heat the wafer plates 230. Since the wafer plates 230 carry silicon wafers, the heating plates 121 can heat the wafer plates 230 to indirectly heat the silicon wafers, so that the silicon wafers reach a required temperature during the film deposition process. The heating plates 121 are provided with a relief structure 1211, which can be a first relief hole or a relief notch. The embodiments of the present application do not limit the specific shape of the relief structure 1211.

[0227] The lifting mechanism 130 comprises a lifting frame 132 arranged in the chamber body 110. The lifting frame 132 comprises a plurality of layers of first support blocks 1321 distributed at intervals. Each layer of first support blocks 1321 is opposite to the relief structure 1211 of the corresponding heating plate 121. The lifting frame 132 can be lifted.

[0228] During the lifting of the lifting frame 132, each first supporting block 1321 passes through the corresponding avoiding structure 1211 upwardly and carries the corresponding wafer plate 230, so as to separate the wafer plate 230 from the corresponding heating plate 121, thereby preparing for the subsequent batch grasping of the wafer plate 230 carrying the silicon wafer by the wafer plate manipulator 210.

[0229] During the lowering of the lifting frame 132, each first supporting block 1321 passes through the corresponding avoiding structure 1211 downwardly and makes the wafer plate 230 carried thereby fall on the corresponding heating plate 121, so as to separate the wafer plate 230 carried thereby from the corresponding heating plate 121, thereby realizing the placement of the wafer plate 230 carrying the silicon wafer on the heating plate 121, and preparing for the subsequent carrying and heating of the wafer plate 230 by the heating plate 121.

[0230] The process chamber disclosed in the embodiments of the present application can be used for the batched wafer plate 230 carrying the silicon wafer to enter and exit, thereby realizing the process of the batched silicon wafer, being conducive to improving the process efficiency, and finally achieving the purpose of improving the productivity of the semiconductor process equipment.

[0231] In the embodiment of the present application, the multi-layer heating plate 121 included in the heater 120 can be independently arranged in the chamber body 110 or cooperatively arranged in the chamber body 110. In one embodiment, the heater 120 disclosed in the embodiment of the present application can further include a plurality of sets of support members 122, and the two adjacent heating plates 121 can be supported by a set of support members 122 to be spaced apart. The heater 120 with such a structure can isolate the two adjacent heating plates 121 by the set of support members 122, and at the same time, the lower heating plate 121 among the two adjacent heating plates 121 can support the upper heating plate 121 by the set of support members 122. Compared with the independent arrangement of the multi-layer heating plate 121, such a structure has the advantage of simple structure.

[0232] Each set of support members 122 can include one support member 122 or a plurality of support members 122, as long as it can achieve the purpose of supporting the two adjacent heating plates 121. In one embodiment, each set of support members 122 includes a plurality of support members 122, and the plurality of support members 122 included in each set of support members 122 can be spaced apart along the edge of the corresponding heating plate 121. Such a structure can achieve more stable and balanced support.

[0233] In one embodiment, the heater 120 can be fixed in the chamber body 110. In the embodiment of the present application, the heater 120 can further include a foot prop 123 supported between the heating plate 121 adjacent to the bottom wall of the chamber body 110 and the bottom wall of the chamber body 110, so that the foot prop 123 supports the heater 120 to be spaced apart from the bottom wall of the chamber body 110 and avoids contact with the bottom wall of the chamber body 110. Specifically, the bottom end of the foot prop 123 can be fixedly connected with the bottom wall of the chamber body 110, and the top end of the foot prop 123 can be fixedly connected with the heating plate 121 adjacent to the bottom wall of the chamber body 110 among the multi-layer heating plate 121. It should be noted that the heating plate 121 adjacent to the bottom wall of the chamber body 110 among the multi-layer heating plate 121 refers to the bottom heating plate 121 among the multi-layer heating plate 121.

[0234] In order to achieve better support, in a further embodiment, the foot prop 123 can be a plurality of foot props 123, and the plurality of foot props 123 can be spaced apart at the edge of the heater 120. In this case, the plurality of spaced apart foot props 123 can support at multiple points, which is also conducive to balanced support, and ultimately improves the support effect.

[0235] The heating plate 121 can carry the wafer plate 230 carrying the silicon waits. In order to avoid the wafer plate 230 from being deflected on the corresponding heating plate 121, in an embodiment, the heater 120 can further include a limiting block 124. The edge of each layer of the heating plate 121 can be provided with a plurality of limiting blocks 124 distributed at intervals. The limiting blocks 124 are used to be in limiting contact with the opposite edge of the wafer plate 230. Under the limiting action of the limiting blocks 124, the wafer plate 230 is less likely to break through the edge of the heating plate 121 to be deflected or even to fall off. Specifically, the limiting blocks 124 can be fixed on the edge of the heating plate 121 by welding, bonding, clamping or the like.

[0236] In a further embodiment, the edge of the heating plate 121 can include a plurality of sub-edges connected in sequence. The limiting blocks 124 can be arranged on the sub-edges except the sub-edge through which the wafer plate 230 passes. Such a structure can make it easier for the wafer plate 230 to pass between two adjacent heating plates 121.

[0237] In an embodiment, the limiting block 124 can include a first vertical limiting surface 1242. The first vertical limiting surface 1242 can be in limiting contact with the edge of the wafer plate 230. In another embodiment, the limiting block 124 not only includes the first vertical limiting surface 1242, but also includes a first calibration inclined surface 1241 connected with the first vertical limiting surface 1242. The first calibration inclined surface 1241 is inclined relative to the first vertical limiting surface 1242. The first calibration inclined surface 1241 is used to guide the wafer plate 230 to fall to the position in limiting contact with the first vertical limiting surface 1242. When the wafer plate 230 falls onto the heating plate 121, once the wafer plate 230 is deflected, the guidance of the first calibration inclined surface 1241 can make the wafer plate 230 carrying the silicon wafer fall to the position in limiting contact with the first vertical limiting surface 1242 under the action of gravity. Therefore, the limiting block 124 not only plays a limiting role, but also plays a role in correcting the position of the wafer plate 230.

[0238] In the plurality of layers of the heating plate 121, the distance between the two adjacent layers of the heating plate 121 can be equal. Such a structure can be conducive to making the size of the space between the two adjacent layers of the heating plate 121 consistent, which is conducive to making the process environment faced by the silicon wafer on the wafer plate 230 between the two adjacent layers of the heating plate 121 consistent, thereby being conducive to improving the process consistency of the silicon wafer.

[0239] In other embodiments, the top surface of the heating plate 121 at the top of the heater 120 and the bottom surface of the heating plate 121 at the bottom of the heater 120 can be paved with an insulating plate 125, which can be a mica plate, and can also be made of other insulating materials, and the specific material of the insulating plate 125 is not limited in the embodiments of the present application. The arrangement of the insulating plate 125 can avoid the adverse effects of the top wall of the chamber body 110 and the bottom wall of the chamber body 110 on the heater 120.

[0240] In this embodiment, since the top surface of the heating plate 121 at the top of the heater 120 is paved with the insulating plate 125, the heating plate 121 at the top of the heater 120 can not place the slide plate 230.

[0241] Compared with the process chamber in the related art, which can only place one layer of silicon wafers and can construct a process environment by electrically connecting the radio frequency power source and the ground through the top wall of the process chamber and the bottom wall of the process chamber, the process chamber disclosed in the embodiments of the present application can realize the simultaneous process of multiple layers of silicon wafers. Meanwhile, in the multiple heating plates 121, one of the two adjacent heating plates 121 can be connected to the radio frequency power source, and the other can be connected to the ground, so that the silicon wafers between any two adjacent heating plates 121 can be in the same plasma process environment, which is beneficial to ensure the consistency of the process.

[0242] The heating plate 121 is used to place the slide plate 230 carrying the silicon wafers. Specifically, each heating plate 121 can place one slide plate 230, or can place multiple slide plates 230. Placing multiple slide plates 230 on each heating plate 121 can realize the process of more silicon wafers, which is beneficial to realize higher productivity. Based on this, in one embodiment, the heating plate 121 can have multiple plate placement areas arranged side by side, each plate placement area is used to place one slide plate 230, and each plate placement area is provided with a relief structure 1211.

[0243] The embodiments of the present application do not limit the position of the relief structure 1211 arranged on the plate placement area, nor the number of the relief structure 1211 arranged on the plate placement area. In one embodiment, two side edges of each plate placement area extending in the direction of taking and placing the slide plate 230 (which can also be considered as the direction of the slide plate 230 carrying the silicon wafers in and out of the process chamber) can be provided with multiple relief structures 1211 arranged at intervals, and the multiple relief structures 1211 can be passed through by the multiple first supporting blocks 1321 to realize the multi-point support of the slide plate 230, which is beneficial to improve the stability of supporting the slide plate 230. The direction of taking and placing the slide plate 230 is parallel to the direction in which the opening of the chamber body faces. This structure can more easily avoid the interference between the second mechanical fingers 212 and the first supporting blocks 1321 in the process of transferring.

[0244] As described above, the lifting frame 132 can include multiple layers of first support blocks 1321, each layer of first support blocks 1321 can be lifted independently, and the lifting frame 132 rises when the multiple layers of first support blocks 1321 contained in the lifting frame 132 rise synchronously, and the lifting frame 132 falls when the multiple layers of first support blocks 1321 contained in the lifting frame 132 fall synchronously. In order to facilitate the lifting drive of the multiple layers of first support blocks 1321, the lifting frame 132 disclosed in the embodiment of the application can further include a first frame body, and the multiple layers of first support blocks 1321 contained in the lifting frame 132 are all fixed on the first frame body, so as to be able to rise and fall synchronously with the first frame body. In this case, each layer of first support blocks 1321 cannot be lifted independently. In the specific working process, only the first frame body needs to be driven to rise and fall, so as to realize the lifting of the multiple layers of first support blocks 1321 contained in the lifting frame 132, and at the same time, it is more conducive to the synchronism of the lifting of the multiple layers of first support blocks 1321.

[0245] The first frame body is the main frame of the lifting frame 132, can realize the installation of the multiple layers of first support blocks 1321 in the same installation basis, and can drive the multiple layers of first support blocks 1321 to rise and fall synchronously. The first support blocks 1321 can be fixed on the first frame body by welding, bonding, clamping or the like, so as to realize the installation on the first frame body.

[0246] The structure of the first frame body can be various, and the embodiment of the application does not limit the specific structure of the first frame body. In one specific embodiment, the first frame body can include multiple rows of vertical beams 1322 distributed at intervals, each row of vertical beams 1322 can include multiple vertical beams 1322, each vertical beam 1322 is provided with multiple first support blocks 1321 distributed at intervals along the height direction thereof, and the multiple first support blocks 1321 located at the same height of the multiple rows of vertical beams 1322 constitute a layer of first support blocks 1321; the area between the adjacent two rows of vertical beams 1322 on the heating plate 121 constitutes a plate area, and the part between the adjacent two plate areas on the heating plate 121 can be provided with a second avoiding hole 1212 for the vertical beam 1322 distributed opposite thereto to pass through. In the first frame body of this structure, since it includes multiple rows of vertical beams 1322, each row of vertical beams 1322 includes multiple vertical beams 1322, and each vertical beam 1322 is provided with multiple first support blocks 1321 distributed along the height direction thereof, therefore, this structure can make the number of each layer of first support blocks 1321 larger, which is conducive to improving the stability of the support of the slide plate 230.

[0247] Further, the first frame body can include a cross beam 1323 for connecting the multiple rows of vertical beams 1322. Specifically, the cross beam 1323 can include cross beams 1323 all extending horizontally and intersecting with each other, and these cross beams 1323 can respectively realize the connection between the vertical beams 1322 of different rows and the connection between the cross beams 1323 of the same row.

[0248] The process chamber disclosed by the embodiment of the present application can comprise a manual control mechanism connected with the lifting frame 132, which is used for manual control by an operator to realize the lifting of the lifting frame 132. Specifically, the manual control mechanism can be connected with the lifting frame 132 through the connection with the first frame body.

[0249] In order to facilitate driving, the process chamber disclosed by the embodiment of the present application can further comprise a driving mechanism 131. It should be noted that the driving mechanism 131 herein refers to a power mechanism that does not need human power to realize driving. The driving mechanism 131 is connected with the lifting frame 132, and is used for driving the lifting frame 132 to move upwards or downwards.

[0250] In one embodiment, the driving mechanism 131 can comprise a power source 1311 and a transmission mechanism 1312. The power source 1311 can be implemented by a driving motor, a hydraulic motor, etc. The power source 1311 can be arranged outside the chamber body 110, so as to avoid the adverse effects of the process environment of the process chamber on the working of the power source 1311. The chamber body 110 can be provided with a through hole 111, the transmission mechanism 1312 passes through the through hole 111 and is in sealing cooperation with the chamber body 110, the power input end of the transmission mechanism 1312 is connected with the power source 1311, and the power output end of the transmission mechanism 1312 is inside the chamber body 110 and is connected with the lifting frame 132. In this structure, the transmission mechanism 1312 realizes the transmission of power from outside the chamber body 110 to inside the chamber body 110, and at the same time, is in sealing cooperation with the chamber body 110, so as to ensure the isolation of the process environment in the chamber body 110 from the external environment.

[0251] Further, the transmission mechanism 1312 can comprise a plurality of jacking transmission mechanisms. The plurality of jacking transmission mechanisms can be distributed at intervals, and each of the plurality of jacking transmission mechanisms can pass through the chamber body 110 and be connected with the opposite parts of the lifting frame 132. The power source 1311 drives the plurality of jacking transmission mechanisms to drive the lifting frame 132 to move synchronously, and each of the plurality of jacking transmission mechanisms is in sealing cooperation with the chamber body 110. The transmission mechanism 1312 of this structure can realize the multi-point driving of the lifting frame 132, which is conducive to improving the stability of the driving of the lifting frame 132 and the driving capacity of the driving mechanism 131.

[0252] The jacking transmission mechanism can be a connecting rod mechanism or a lead screw transmission mechanism, and the embodiment of the present application does not limit the specific type of the jacking transmission mechanism.

[0253] In one embodiment, the lifting driving mechanism can be a screw driving mechanism, which has the advantages of high driving precision and stable driving, and is beneficial to provide fine and stable driving for the lifting frame 132.

[0254] The screw driving mechanism can have various structures. In one embodiment, the screw driving mechanism can include a screw 13121, a lifting portion 13122, and a ring-shaped pressing plate 13123, an extension tube 13124 and a sealing ring 13125 outside the chamber body 110. The top end of the lifting portion 13122 penetrates through the hole 111 and is located in the chamber body 110, and is fixedly connected with the lifting frame 132. Specifically, the top end of the lifting portion 13122 can be fixed with the first frame body, so as to realize the fixation with the lifting frame 132. The lifting of the lifting portion 13122 can drive the lifting of the lifting frame 132. The bottom end of the lifting portion 13122 penetrates through the ring-shaped pressing plate 13123 and is threadedly connected with the screw 13121. The first end of the extension tube 13124 is sealingly connected with the surface of the ring-shaped pressing plate 13123 away from the chamber body 110. The extension tube 13124 is sleeved outside the lifting portion 13122, and the second end of the extension tube 13124 is sealed with the bottom end of the lifting portion 13122. The extension tube 13124 can realize the sealing of the hole 111 through the cooperation with the corresponding components, so as to ensure the sealing of the process chamber. The sealing ring 13125 is clamped between the chamber body 110 and the ring-shaped pressing plate 13123, so as to realize the sealing between the chamber body 110 and the ring-shaped pressing plate 13123. The screw 13121 is drivingly connected with the power source 1311. The power source 1311 drives the screw 13121 to rotate. Since the screw 13121 is threadedly connected with the lifting portion 13122, the rotation of the screw 13121 can drive the lifting portion 13122 to move up and down. The lifting of the lifting portion 13122 can drive the lifting of the lifting frame 132.

[0255] Specifically, the lifting portion 13122 can be directly provided with a threaded hole, so as to realize the threadedly connection with the screw 13121. In a specific embodiment, the lifting portion 13122 can be a threaded sleeve. The extension tube 13124 can be telescopic, so as to adapt to the lifting of the lifting portion 13122 while ensuring the sealing of the process chamber. The extension tube 13124 can be a telescopic tube made of flexible material or elastic material (such as rubber), or can be a telescopic tube 13124 formed by designing a telescopic structure. For example, the extension tube 13124 can be a bellows.

[0256] In a further embodiment, the lead screw transmission mechanism can further include a connecting plate 13126, a guide rod 13127 supported between the base 13128 and the annular pressing plate 13123 to drive the annular pressing plate 13123 to press the sealing ring 13125, and the connecting plate 13126 is in sliding fit with the guide rod 13127, and the connecting plate 13126 is fixedly connected with the jacking part 13122. During the lifting of the jacking part 13122, the jacking part 13122 can drive the connecting plate 13126 to lift, so that the connecting plate 13126 slides along the guide rod 13127, and the guide rod 13127 can make the lifting of the jacking part 13122 more accurate. At the same time, the guide rod 13127 applies pressure to the annular pressing plate 13123 based on the base 13128, so that the sealing ring 13125 is pressed between the annular pressing plate 13123 and the cavity body 110, ensuring the sealing therebetween. In this case, the guide rod 13127 not only plays a guiding function, but also plays a function of pressing the annular pressing plate 13123, achieving the purpose of one thing serving multiple purposes.

[0257] The lead screw transmission mechanism disclosed in the embodiment of the application can further include a threaded bushing 13129, which is at least partially lined in the jacking part 13122 and detachably connected with the jacking part 13122. Specifically, the threaded bushing 13129 can be fixedly connected with the jacking part 13122 by interference fit, connecting piece connection or the like. The threaded bushing 13129 is in threaded fit with the lead screw 13121 to drive the jacking part 13122 to lift during the rotation of the lead screw 13121. Once the threaded bushing 13129 is damaged, it can be individually removed and replaced, so that the jacking part 13122 does not need to be replaced, which is conducive to reducing the maintenance cost of the equipment.

[0258] The lead screw transmission mechanism disclosed in the embodiment of the application can further include a first speed reducer 13130, and the lead screw 13121 is in transmission connection with the first speed reducer 13130. The first speed reducers 13130 of two adjacent lead screw transmission mechanisms can be in transmission connection through a connecting shaft 13131, so that power transmission to the lead screw 13121 can also be transmitted to the downstream lead screw transmission mechanism. The connecting shaft 13131 and the two adjacent first speed reducers 13130 can be fixedly connected through a shaft coupling 13133.

[0259] In order to better achieve the purpose of increasing driving force, the transmission mechanism 1312 disclosed in the embodiment of the application can further include a second speed reducer 13132. In the plurality of lead screw transmission mechanisms, the first speed reducer 13130 of the jacking transmission mechanism close to the power source 1311 is in transmission connection with the power source 1311 through the second speed reducer 13132.

[0260] In the structure described above, the annular pressing plate 13123 can only be in close contact with the chamber body 110, so as to press the sealing ring 13125 therebetween. In order to improve the stability of the structure, in the embodiment of the present application, the annular pressing plate 13123 can be fixedly connected with the chamber body 110. Specifically, the annular pressing plate 13123 can be detachably connected with the chamber body 110 through a threaded connection, so as to ensure the stability of the cooperation between the driving mechanism 131 and the chamber body 110.

[0261] In the embodiment of the present application, the first support block 1321 is used to support the wafer plate 230. Specifically, the first support block 1321 can have a first horizontal support surface 13212, which is used to support the wafer plate 230 carrying the silicon wafer. In further embodiments, the first support block 1321 can also have a second calibration inclined surface 13211, which is inclined relative to the first horizontal support surface 13212, and the first horizontal support surface 13212 is lower than the second calibration inclined surface 13211. The second calibration inclined surface 13211 is used to guide the wafer plate 230 to slide onto the first horizontal support surface 13212. In the process of supporting the wafer plate 230, the wafer plate 230 should be supported on the first horizontal support surface 13212. Considering the abnormal situation that may exist, once the wafer plate 230 deviates from the first horizontal support surface 13212 and falls on the second calibration inclined surface 13211, under the action of the gravity of the wafer plate 230, the wafer plate 230 will slide along the second calibration inclined surface 13211 and be finally guided to the first horizontal support surface 13212, so as to finally correct the position of the wafer plate 230.

[0262] In further embodiments, the first support block 1321 can also include a second vertical limiting surface 13213, which connects the second calibration inclined surface 13211 and the first horizontal support surface 13212. The second vertical limiting surface 13213 is used to be in limiting contact with the edge of the wafer plate 230 supported on the first horizontal support surface 13212, so as to avoid the deviation of the wafer plate 230 after being supported on the first horizontal support surface 13212.

[0263] Based on the process chamber disclosed in the embodiments of the present application, a slide plate robot 210 is disclosed, which is used in cooperation with the process chamber described above. The slide plate robot 210 includes a finger seat 211 and a plurality of second mechanical fingers 212 arranged on the finger seat 211. Specifically, the second mechanical fingers 212 can be fixedly connected with the finger seat 211. When taking and placing the slide plate 230, the plurality of second mechanical fingers 212 can respectively extend to the interlayer between the heating plate 121 and the first support block 1321 through the opening of the chamber body 110, and contact the slide plate 230 carried on the first support block 1321 during the descending process of the lifting frame 132 to carry the slide plate 230 carrying the silicon wafer; during the ascending process of the lifting frame 132, the slide plate 230 carried on the plurality of second mechanical fingers 212 contacts the first support block 1321 of the lifting frame 132 to be carried onto the first support block 1321.

[0264] In the embodiments of the present application, the slide plate 230 can be provided with a positioning hole 232 or a positioning groove, and the second mechanical finger 212 can be provided with a first positioning protrusion 2121. When the second mechanical finger 212 carries the slide plate 230 carrying the silicon wafer, the first positioning protrusion 2121 can be positioned and matched with the positioning hole 232 or the positioning groove, so as to ensure the stability of the second mechanical finger 212 grabbing the slide plate 230. The first positioning protrusion 2121 can be one or multiple. In order to achieve better positioning, the first positioning protrusion 2121 can be multiple, and the multiple first positioning protrusions 2121 are used for one-to-one positioning and matching with the multiple positioning holes 232 or the multiple positioning grooves on the slide plate 230.

[0265] The second mechanical finger 212 can directly contact the support to carry the slide plate 230 carrying the silicon wafer. In order to alleviate the wear between the slide plate 230 and the second mechanical finger 212, in another embodiment, the second mechanical finger 212 can be provided with a support pad 213, which is used to support the slide plate 230 to isolate the slide plate 230 from the second mechanical finger 212. In this way, the wear between the slide plate 230 and the second mechanical finger 212 can be alleviated, which is beneficial to prolong the service life of the two. The support pad 213 can be an elastic pad or a wear-resistant pad.

[0266] As described above, the wafer boat manipulator 210 can group- wise grasp the wafer boats 230 carrying silicon wafers, and the plurality of second mechanical fingers 212 can be arranged in one column, each column of second mechanical fingers 212 including a plurality of second mechanical fingers 212, in which case the plurality of wafer boats 230 grasped by one column of second mechanical fingers 212 is a group of wafer boats 230. In order to further improve the transmission capacity, in each wafer boat manipulator 210, the plurality of second mechanical fingers 212 can be arranged in multiple columns, each column of second mechanical fingers 212 including a plurality of second mechanical fingers 212, in which case the plurality of wafer boats 230 grasped by the multiple columns of second mechanical fingers 212 of the wafer boat manipulator 210 is a group of wafer boats 230.

[0267] In the above embodiment of the present application, the wafer boat manipulator 210 can group- wise grasp the wafer boats 230 carrying silicon wafers, and achieve the transmission of the group of wafer boats 230 carrying silicon wafers between the first wafer boat temporary storage device 203 and the first process chamber 101, between the first process chamber 101 and the second wafer boat temporary storage device 204, between the second wafer boat temporary storage device 204 and the second process chamber 102, between the second process chamber 102 and the third process chamber 103, between the third process chamber 103 and the second wafer boat temporary storage device 204, between the second wafer boat temporary storage device 204 and the fourth process chamber 104, or between the fourth process chamber 104 and the first wafer boat temporary storage device 203, so that the wafer boat manipulator 210 can have the ability to transport in multiple dimensions, and the above embodiment also exemplarily illustrates the structure of the wafer boat manipulator 210. The embodiments of the present application do not limit the specific structure of the wafer boat manipulator 210.

[0268] Based on the above disclosed wafer boat manipulator 210, the embodiments of the present application disclose a wafer boat temporary storage device 220, as described above, the disclosed wafer boat temporary storage device 220 is used in conjunction with the above described wafer boat manipulator 210. The wafer boat temporary storage device 220 can include a second frame body 221 and a second support block 222 arranged on the second frame body 221. The wafer boat manipulator 210 can carry the plurality of wafer boats 230 carrying silicon wafers which are group- wise received by the wafer boat manipulator 210 on the plurality of layers of second support blocks 222, or the wafer boat manipulator 210 can group- wise take out the wafer boats 230 carrying silicon wafers received in the wafer boat temporary storage device 220.

[0269] In a further embodiment, the second rack 221 can have a plurality of slide plate temporary storage spaces, and each slide plate temporary storage space can be provided with a plurality of second support blocks 222 distributed at intervals, and the slide plate robot 210 can transfer the slide plates 230 received in groups to the slide plate temporary storage spaces, so that the slide plates 230 in groups are respectively carried on the plurality of second support blocks 222 in the slide plate temporary storage spaces, or the slide plate robot 210 can take out the slide plates 230 carried in the slide plate temporary storage spaces in groups.

[0270] As described above, the slide plate 230 can be provided with a positioning hole 232 or a positioning groove, and in order to make the slide plate 230 more stably stored in the slide plate temporary storage device 220, the second support block 222 can be provided with a second positioning protrusion, and the second positioning protrusion is used for positioning cooperation with the positioning hole 232 or the positioning groove, so that the slide plate 230 in the slide plate temporary storage device 220 is more stably stored. The second positioning protrusion can be one or a plurality. In order to achieve better positioning, the second positioning protrusion can be a plurality, and the plurality of second positioning protrusions are used for one-to-one positioning cooperation with the plurality of positioning holes 232 or the plurality of positioning grooves on the slide plate 230.

[0271] In order to more stably place the silicon wafer, the slide plate 230 can be provided with a silicon wafer groove 231. In an embodiment, each slide plate 230 can be provided with one silicon wafer groove 231, or a plurality of silicon wafer grooves 231, and the number of the silicon wafer grooves 231 provided on the slide plate 230 is not limited by the embodiment of the application.

[0272] As described above, the silicon wafer robot 240 can take and place the silicon wafers in groups. For the convenience of description, the silicon wafer robot 240 includes N first robot fingers 241 distributed at intervals, N is a positive integer greater than or equal to 2, each first robot finger 241 can take and place one silicon wafer, and the silicon wafer robot 240 can take and place N silicon wafers at a time, and the N silicon wafers are a group of silicon wafers, so as to realize the taking and placing of the silicon wafers in groups, which undoubtedly can improve the taking and placing efficiency, and further can improve the transmission efficiency.

[0273] The slide plate temporary storage device 220 is used for carrying the slide plates 230 in groups, and each group of slide plates 230 can include M slide plates 230 distributed at intervals in the carrying direction of the slide plate temporary storage device 220. In each group of slide plates 230, the silicon wafer grooves 231 on any two slide plates 230 correspond to each other, so that the opposite silicon wafer grooves 231 on the adjacent N slide plates 230 form a groove group, and M is a positive integer greater than or equal to 2, wherein M is greater than or equal to N, and the ratio of M to N is a positive integer greater than or equal to 1.

[0274] In this way, the silicon wafer manipulator 240 can take and place the silicon wafers in groups, and the silicon wafers in groups taken and placed by the silicon wafer manipulator 240 can have accurate correspondence with the groove groups of the carrier plate 230 in the carrier plate temporary storage device 220, so that the silicon wafer manipulator 240 can accurately fill the groove groups of the carrier plate temporary storage device 220 or accurately take all the silicon wafers in the groove groups of the carrier plate temporary storage device 220 after taking and placing multiple times. The structure that can take and place the silicon wafers in groups is beneficial to improve the transmission efficiency of the transmission device 200 on the silicon wafers, and ultimately is beneficial to improve the production capacity of the semiconductor process equipment.

[0275] Based on this, the embodiment of the application discloses a control method of a transmission device 200. The disclosed control method is related to a transmission device 200 including a silicon wafer manipulator 240, a carrier plate temporary storage device 220, and a carrier plate 230. The silicon wafer manipulator 240 includes N first mechanical fingers 241 distributed at intervals. The carrier plate temporary storage device 220 is used to carry groups of carrier plates 230. Each group of carrier plates 230 includes M carrier plates 230 distributed at intervals in the carrying direction of the carrier plate temporary storage device 220. Each carrier plate 230 is provided with a silicon wafer groove 231. In each group of carrier plates 230, the silicon wafer grooves 231 on any two carrier plates 230 are opposite to each other, so that the opposite silicon wafer grooves 231 on the adjacent N carrier plates 230 form a groove group. M and N are both greater than or equal to 2, and M is greater than or equal to N. The ratio of M to N is a positive integer greater than or equal to 1. The control method includes the following steps:

[0276] S210, controlling the N first mechanical fingers 241 of the silicon wafer manipulator 240 to grasp N silicon wafers;

[0277] S220, controlling the silicon wafer manipulator 240 after grasping the silicon wafers to move towards the carrier plate temporary storage device 220;

[0278] S230, controlling the silicon wafer manipulator 240 to place the N silicon wafers grasped by the silicon wafer manipulator 240 in corresponding groove groups of the carrier plate temporary storage device 220 in groups, so that the N silicon wafers contained in each group of silicon wafers are placed in the silicon wafer grooves 231 of the corresponding groove group one by one.

[0279] In the embodiment in which each group of carrier plates 230 includes N carrier plates 230 and each carrier plate 230 includes one silicon wafer groove 231, each group of carrier plates 230 forms a groove group, and the silicon wafer manipulator 240 can fill a group of carrier plates 230 after grasping once.

[0280] As described above, each of the wafer plate 230 can be provided with a plurality of wafer slots 231, and the arrangement direction of the wafer slots 231 on each wafer plate 230 is consistent, so that each group of wafer plates 230 forms a plurality of slot groups distributed along the arrangement direction of the wafer slots 231. The wafer plate temporary storage device 220 can be provided with a wafer taking and placing opening, and the orientation of the wafer taking and placing opening can be perpendicular to the arrangement direction. In this embodiment, the S220 can include: controlling the wafer robot 240 to move towards the wafer taking and placing opening after grabbing the wafer.

[0281] Further, the S230 includes: controlling the wafer robot 240 to sequentially place the wafer grabbed by the first mechanical finger 241 in the plurality of slot groups along the arrangement direction.

[0282] As described above, the wafer transfer device 200 disclosed in the embodiments of the present application can also include a flower basket loading and unloading device 260, the wafer transfer device 200 includes a plurality of wafer robots 240 and a plurality of wafer plate temporary storage devices 220, the plurality of wafer robots 240 includes a first wafer robot 201, and the plurality of wafer plate temporary storage devices 220 includes a first wafer plate temporary storage device 203; the first wafer robot 201 can be arranged between the first wafer plate temporary storage device 203 and the flower basket loading and unloading device 260; in this case, wherein:

[0283] The S210 can include: controlling the first mechanical finger 241 of the first wafer robot 201 to grab the wafer that has not been processed from the flower basket loading and unloading device 260;

[0284] The S220 can include: controlling the first wafer robot 201 to move towards the first wafer plate temporary storage device 203 after grabbing the wafer;

[0285] The S230 can include: controlling the first wafer robot 201 to place the wafer grabbed by the first mechanical finger 241 in the corresponding slot group on the first wafer plate temporary storage device 203.

[0286] In a further embodiment, after the wafer process is completed, the control method of the wafer transfer device disclosed in the embodiments of the present application can further include the following steps:

[0287] S250, controlling the first mechanical finger 241 of the first wafer robot 201 to grab the wafer after the process from the slot group of the first wafer plate temporary storage device 203;

[0288] S270, controlling the first wafer robot 201 to place the wafer after the process grabbed in the flower basket loading and unloading device 260.

[0289] Before S270, the control method of the wafer transfer device can further include:

[0290] S260, control the first wafer robot 201 to move towards the flower basket loading and unloading device 260.

[0291] Before S250, the control method of the transfer device can further include:

[0292] S240, control the first wafer robot 201 to move towards the first wafer plate temporary storage device 203.

[0293] As described above, the transfer device disclosed in the embodiments of the present application can further include a flip temporary storage device 250, the transfer device 200 includes a plurality of wafer robots 240 and a plurality of wafer plate temporary storage devices 220, the plurality of wafer robots 240 includes a second wafer robot 202, the plurality of wafer plate temporary storage devices 220 includes a second wafer plate temporary storage device 204, the second wafer robot 202 is arranged between the flip temporary storage device 250 and the second wafer plate temporary storage device 204, in this case, wherein:

[0294] S210 can include: controlling the first mechanical finger 241 of the second wafer robot 202 to grab the first plate surface of the wafer from the flip temporary storage device 250.

[0295] S220 can include: controlling the second wafer robot 202 that grabs the wafer to move towards the second wafer plate temporary storage device 204.

[0296] S230 can include: controlling the second wafer robot 202 to place the wafer grabbed by the first mechanical finger 241 in the corresponding groove group of the second wafer plate temporary storage device 204.

[0297] In further embodiments, before controlling the first mechanical finger 241 of the second wafer robot 202 to grab the wafer after flipping from the flip temporary storage device 250, the control method of the transfer device can further include:

[0298] S280, control the second wafer robot 202 to move towards the flip temporary storage device 250.

[0299] In further embodiments, before S280, the control method of the transfer device can further include:

[0300] S291, control the second wafer robot 202 to move towards the second wafer plate temporary storage device 204.

[0301] S291, control the first mechanical finger 241 of the second wafer robot 202 to grab the second plate surface of the wafer in the groove group from the second wafer plate temporary storage device 204.

[0302] It should be noted that one of the first plate surface of the silicon wafer and the second plate surface of the silicon wafer is the front surface of the silicon wafer, and the other is the back surface of the silicon wafer.

[0303] The semiconductor process equipment disclosed by the embodiments of the present application can be a plasma enhanced chemical vapor deposition (PECVD) device, and can also be other semiconductor devices with similar functions, and the embodiments of the present application do not limit the specific types of the semiconductor process equipment.

[0304] In the above embodiments, the differences between the various embodiments are mainly described, and the different features of the various embodiments can be combined to form more specific embodiments as long as they are not contradictory. In view of the brevity of the text, the details are not described here.

[0305] The embodiments of the present application are described above in combination with the drawings, but the present application is not limited to the above specific embodiments, and the above specific embodiments are only illustrative but not restrictive. Those skilled in the art can make many forms under the inspiration of the present application without departing from the scope of the present application and the scope of protection of the claims, which are all within the protection of the present application.

Claims

1. A process chamber, comprising: The chamber body (110), the lifting mechanism (130) and the heater (120) arranged in the chamber body (110), the heater (120) comprises a plurality of layers of heating plates (121) arranged at intervals, the heating plates (121) are used for heating the slide plate (230) carrying the silicon wafer; the heating plate (121) is provided with a avoiding structure (1211); The lifting mechanism (130) comprises a lifting frame (132) arranged in the chamber body (110), the lifting frame (132) comprises a plurality of layers of first support blocks (1321) arranged at intervals, each layer of the first support blocks (1321) is opposite to the avoiding structure (1211) of the corresponding heating plate (121); During the lifting of the lifting frame (132), each layer of the first support blocks (1321) passes through the opposite avoiding structure (1211) upwards and carries the corresponding slide plate (230), so that the slide plate (230) is separated from the corresponding heating plate (121); during the descent of the lifting frame (132), each layer of the first support blocks (1321) passes through the opposite avoiding structure (1211) downwards and makes the slide plate (230) carried thereby fall on the corresponding heating plate (121), so as to be separated from the slide plate (230) carried thereby.

2. The process chamber of claim 1, wherein, The heater (120) comprises a plurality of groups of support pieces (122), and two adjacent layers of the heating plates (121) are supported by a group of the support pieces (122) to be arranged at intervals.

3. The process chamber of claim 2, wherein, Each group of the support pieces (122) comprises a plurality of the support pieces (122), and the plurality of the support pieces (122) included in each group of the support pieces (122) are arranged at intervals along the edge of the corresponding heating plate (121).

4. The process chamber of claim 1, wherein, The heater (120) further comprises a foot prop (123) supported between the heating plate (121) adjacent to the bottom wall of the chamber body (110) and the bottom wall of the chamber body (110).

5. The process chamber of claim 4, wherein, The foot prop (123) is a plurality of, and a plurality of the foot props (123) are arranged at intervals at the edge of the heater (120).

6. The process chamber of claim 1, wherein, The heater (120) further comprises a limiting block (124), and a plurality of the limiting blocks (124) arranged at intervals are arranged at the edge of each layer of the heating plate (121), and the limiting block (124) is used for limiting contact with the opposite edge on the slide plate (230).

7. The process chamber of claim 6, wherein, The edge of the heating plate (121) comprises a plurality of sub-edges connected in sequence and end to end, and the limiting block (124) is arranged at the sub-edge other than the sub-edge through which the slide plate (230) passes in and out.

8. The process chamber of claim 6 or 7, wherein, The limiting block (124) comprises a first calibration inclined surface (1241) and a first vertical limiting surface (1242) which are in connection with each other, the first calibration inclined surface (1241) is inclined relative to the first vertical limiting surface (1242), the first vertical limiting surface (1242) is lower than the first calibration inclined surface (1241), and the first calibration inclined surface (1241) is used for guiding the slide plate (230) to fall to a position in limiting contact with the first vertical limiting surface (1242).

9. The process chamber of claim 1, wherein, In the multi-layer heating plate (121), the distance between two adjacent layers of the heating plate (121) is equal; and / or, in the multi-layer heating plate (121), the top surface of the heating plate (121) located at the top of the heater (120) and the bottom surface of the heating plate (121) located at the bottom of the heater (120) are both paved with an insulating plate (125).

10. The process chamber of claim 1, wherein, The heating plate (121) has a plurality of plate placement areas arranged side by side, each of which is used for placing a slide plate (230), and each of which is provided with the avoiding structure (1211).

11. The process chamber of claim 10, wherein, Each of the two side edges of each of the plate placement areas extending along the taking and placing direction of the slide plate (230) is provided with a plurality of avoiding structures (1211) distributed at intervals.

12. The process chamber of claim 1, wherein, The avoiding structure (1211) is a first avoiding hole or an avoiding notch.

13. The process chamber of claim 10, wherein, The lifting frame (132) further comprises a first frame body, the first frame body comprises a plurality of rows of vertical beams (1322) distributed at intervals, each row of vertical beams (1322) comprises a plurality of vertical beams (1322), each vertical beam (1322) is provided with a plurality of first supporting blocks (1321) distributed at intervals along the height direction thereof, and a plurality of first supporting blocks (1321) located at the same height of the plurality of rows of vertical beams (1322) constitute a layer of first supporting blocks (1321); the area of the heating plate (121) located between two adjacent rows of vertical beams (1322) constitutes a plate placement area, and a second avoiding hole (1212) is formed at the position between two adjacent plate placement areas of the heating plate (121), and the second avoiding hole (1212) is used for allowing the vertical beam (1322) distributed opposite thereto to pass through.

14. The process chamber of claim 1, wherein, The lifting mechanism (130) further comprises a driving mechanism (131), the driving mechanism (131) is connected with the lifting frame (132), and the driving mechanism (131) is used for driving the lifting frame (132) to move upwards or downwards.

15. The process chamber of claim 14, wherein, The driving mechanism (131) comprises a power source (1311) and a transmission mechanism (1312), the power source (1311) is arranged outside the chamber body (110), the chamber body (110) is provided with a through hole (111), the transmission mechanism (1312) passes through the through hole (111) and is in sealing cooperation with the chamber body (110), the power input end of the transmission mechanism (1312) is connected with the power source (1311), and the power output end of the transmission mechanism (1312) is arranged inside the chamber body (110) and is connected with the lifting frame (132).

16. The process chamber of claim 15, wherein, The transmission mechanism (1312) comprises a plurality of jacking transmission mechanisms, the plurality of jacking transmission mechanisms are arranged at intervals, the plurality of jacking transmission mechanisms are connected with opposite parts of the lifting frame (132) and pass through the chamber body (110), the power source (1311) drives the plurality of jacking transmission mechanisms to drive the lifting frame (132) to move synchronously, and the plurality of jacking transmission mechanisms are in sealing cooperation with the chamber body (110).

17. The process chamber of claim 16, wherein, The jacking transmission mechanism is a lead screw transmission mechanism.

18. The process chamber of claim 17, wherein, The lead screw transmission mechanism comprises a lead screw (13121), a jacking part (13122), a ring-shaped pressing plate (13123), a telescopic pipe (13124) and a sealing ring (13125), the top end of the jacking part (13122) is arranged in the chamber body (110) and is fixedly connected with the lifting frame (132), the bottom end of the jacking part (13122) passes through the ring-shaped pressing plate (13123) and is in threaded cooperation with the lead screw (13121), the first end of the telescopic pipe (13124) is in sealing butt joint with the surface of the ring-shaped pressing plate (13123) away from the chamber body (110), the telescopic pipe (13124) is arranged outside the jacking part (13122), the second end of the telescopic pipe (13124) is sealed with the bottom end of the jacking part (13122), the sealing ring (13125) is clamped between the chamber body (110) and the ring-shaped pressing plate (13123), and the lead screw (13121) is in transmission cooperation with the power source (1311).

19. The process chamber of claim 18, wherein, The screw transmission mechanism further comprises a connecting plate (13126), a guide rod (13127), a base (13128) and a threaded bushing (13129), the guide rod (13127) is supported between the base (13128) and the annular pressing plate (13123) to drive the annular pressing plate (13123) to press the sealing ring (13125), the connecting plate (13126) is in sliding fit with the guide rod (13127), the connecting plate (13126) is fixedly connected with the jacking part (13122), the threaded bushing (13129) is at least partially lined in the jacking part (13122) and connected with the jacking part (13122), the threaded bushing (13129) is in threaded fit with the screw (13121) to drive the jacking part (1322) to rise and fall during rotation of the screw (13121).

20. The process chamber of claim 19, wherein, The screw transmission mechanism further comprises a first speed reducer (13130), the screw (13121) is in transmission connection with the first speed reducer (13130), the first speed reducers (13130) of two adjacent screw transmission mechanisms are in transmission connection through a connecting shaft (13131), in a plurality of screw transmission mechanisms, the first speed reducer (13130) of the jacking transmission mechanism close to the power source (1311) is in transmission connection with the power source (1311) through a second speed reducer (13132).

21. The process chamber of claim 20, wherein, The annular pressing plate (13123) is fixedly connected with the chamber body (110).

22. The process chamber of claim 1, wherein, The first support block (1321) comprises a second calibration inclined surface (13211) and a first horizontal support surface (13212) connected with each other, the second calibration inclined surface (13211) is inclined relative to the first horizontal support surface (13212), the first horizontal support surface (13212) is lower than the second calibration inclined surface (13211), and the second calibration inclined surface (13211) is used for guiding the slide of the slide plate (230) to the first horizontal support surface (13212).

23. The process chamber of claim 22, wherein, The first support block (1321) further comprises a second vertical limiting surface (13213) connecting the second calibration inclined surface (13211) and the first horizontal support surface (13212), and the second vertical limiting surface (13213) is used for limiting contact with the edge of the slide plate sliding onto the first horizontal support surface (13212).

24. A slide deck robot (210) characterized by, The slide plate manipulator (210) for use with the process chamber of any one of claims 1-23, the slide plate manipulator (210) comprising a finger seat (211) and a plurality of second mechanical fingers (212) disposed on the finger seat (211), the plurality of second mechanical fingers (212) being capable of extending through an opening of the chamber body (110) to a corresponding interlayer between the heating plate (121) and the first support block (1321) when performing the pick-and-place operation of the slide plate (230), and being capable of contacting the slide plate (230) carried on the first support block (1321) to carry the slide plate (230) during the lowering of the lifting frame (132), and being capable of contacting the slide plate (230) carried on the plurality of second mechanical fingers (212) to carry the slide plate (230) onto the first support block (1321) during the lifting of the lifting frame (132).

25. The slide board robot (210) of claim 24, wherein, The slide plate (230) is provided with a positioning hole or a positioning groove, and the second mechanical finger (211) is provided with a first positioning protrusion (2121) for positioning cooperation with the positioning hole or the positioning groove when the second mechanical finger (212) carries the slide plate (230).

26. The slide board robot (210) of claim 25, wherein, The first positioning protrusion (2121) is a plurality of first positioning protrusions (2121) for one-to-one positioning cooperation with a plurality of the positioning holes or a plurality of the positioning grooves on the slide plate (230).

27. The slide board robot (210) of claim 24, wherein, The second mechanical finger (212) is provided with a support pad (213) for supporting the slide plate (230) to isolate the slide plate (230) from the second mechanical finger (212).

28. The slide board robot (210) of claim 25, wherein, The plurality of second mechanical fingers (212) are arranged in multiple columns, and each column of the second mechanical fingers (212) comprises a plurality of the second mechanical fingers (212).

29. The slide board robot (210) of claim 24, wherein, The slide plate manipulator (210) is a liftable manipulator.

30. A slide plate temporary storage device (220) for use with the slide plate robot (210) of claims 25-29, wherein: The slide plate temporary storage device (220) comprises a second frame body (221) and a second support block (222) disposed on the second frame body (221), the second frame body (221) has a plurality of slide plate temporary storage spaces, each of the slide plate temporary storage spaces is provided with a plurality of layers of the second support blocks (222) arranged at intervals, and the slide plate manipulator (210) can deliver a plurality of slide plates (230) carried thereby into the slide plate temporary storage spaces so that the plurality of slide plates (230) are carried on a plurality of layers of the second support blocks (222) in the slide plate temporary storage spaces, or the slide plate manipulator (210) can take out a plurality of slide plates in the slide plate temporary storage spaces.

31. The slide board temporary storage device of claim 30, wherein, The second support block (222) is provided with a second positioning protrusion, and the slide plate (230) is provided with a positioning hole or a positioning groove, and the second positioning protrusion is used for positioning cooperation with the positioning hole or the positioning groove.

32. The slide board staging device of claim 31, wherein, The second positioning protrusion is a plurality of second positioning protrusions for one-to-one positioning cooperation with a plurality of the positioning holes or a plurality of the positioning grooves.

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