A light-emitting device structure based on current-gate light-emitting regulation

Abstract

The application discloses a light-emitting device structure based on current grid light-emitting regulation, and relates to the field of photoelectric display, which comprises a current grid structure and a light-emitting functional structure; the light-emitting functional structure comprises, in sequence, a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer and a second conductive electrode layer; the current grid structure comprises, in sequence, a current grid electrode layer, a current grid current-limiting injection layer and a current grid transport layer; the current grid transport layer is in contact with the first conductive electrode layer; when the device structure emits light, a first driving signal is applied between the conductive electrode layers to drive the light-emitting functional layer to emit light through hole-electron recombination, and a bias driving signal is applied between the current grid electrode layer and the conductive electrode layer to control the migration amount of the first carrier participating in the recombination and light emission; the injection of electron carriers and hole carriers in the light-emitting functional layer can be regulated through the current grid structure, so that the light-emitting brightness or light-emitting efficiency can be optimized.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of photoelectric display, in particular to a light-emitting device structure based on current grid light-emitting regulation. BACKGROUND

[0002] Quantum dots as light-emitting materials have the advantages of narrow half-peak width, high color purity, extremely high quantum yield and full-spectrum tunability, and quantum dot light-emitting diodes (QLED) thus have great potential to become the dominant player in the field of new display devices.

[0003] However, the light-emitting efficiency or luminance of QLED devices is greatly affected by the carrier recombination process. Different functional layers and quantum dots are usually used to obtain optimal device efficiency, which requires a large amount of time, materials and labor costs. In addition, in the light-emitting layer of QLED devices, the electron mobility and hole mobility are often mismatched, causing the imbalance of the free carrier, which cannot achieve high device light-emitting efficiency when recombined. Correspondingly, OLED devices also have similar problems. SUMMARY

[0004] In view of the shortcomings of the prior art, the technical problem to be solved by the present application is to provide a light-emitting device structure based on current grid light-emitting regulation, aiming to improve the light-emitting efficiency or luminance through current grid light-emitting regulation.

[0005] To achieve the above-mentioned purpose, the present application provides a light-emitting device structure based on current grid light-emitting regulation, which comprises: a current grid structure and a light-emitting functional structure arranged in a stack; the light-emitting functional structure sequentially stacks a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer, and a second conductive electrode layer; the current grid structure sequentially stacks the current grid electrode layer, the current grid current-limiting injection layer, and the current grid transport layer.

[0006] The first carrier transport layer is used for transporting the first carrier, and the second transport layer is used for transporting the second carrier; the current grid transport layer is adjacent to the first conductive electrode layer; the first carrier and the second carrier are respectively one of an electron and a hole;

[0007] When the device structure emits light, a first driving signal is applied between the first conductive electrode layer and the second conductive electrode layer to drive the light-emitting functional layer to emit light through hole-electron recombination, and a second bias driving signal is applied between the current grid electrode layer and the first conductive electrode layer to control the migration amount of the first carrier participating in the recombination of light emission, and to control the luminance and / or light-emitting efficiency of the light-emitting functional layer.

[0008] In the technical solution, the current grid is arranged to drive the recombination of the electron-hole pairs in the original first conductive electrode layer and the second conductive electrode layer to the light-emitting functional layer, and under the bias driving of the current grid, the carrier mobility can be controlled, and based on this, the light-emitting brightness and / or the light-emitting efficiency of the light-emitting functional layer can be controlled. In addition, compared with the voltage grid, the driving efficiency of the grid control is higher, the response speed of the light-emitting brightness / light-emitting efficiency is improved, and the shielding effect of the conductive electrode layer is smaller. In the technical solution, the current grid limiting injection layer is arranged to limit the current between the first conductive electrode layer and the current grid electrode layer, so as to avoid the burning of the device due to the excessive inter-electrode current.

[0009] In an embodiment, the intrinsic mobility of the first carrier in the light-emitting functional layer is less than the intrinsic mobility of the second carrier, and the second bias driving signal applied between the current grid electrode layer and the first conductive electrode layer is used to increase the mobility of the first carrier, so as to increase the light-emitting brightness and the light-emitting efficiency of the light-emitting functional layer. The intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer without the second bias driving signal.

[0010] In the technical solution, according to the intrinsic mobility of the electron and the intrinsic mobility of the hole in the light-emitting composite layer, the first carrier side with less mobility is controlled by the grid, so as to increase the mobility of the first carrier, and then the light-emitting brightness and the light-emitting efficiency can be increased.

[0011] In an embodiment, the intrinsic mobility of the first carrier in the light-emitting functional layer is greater than the intrinsic mobility of the second carrier, and the second bias driving signal applied between the current grid electrode layer and the first conductive electrode layer is used to reduce the mobility of the first carrier, so as to increase the light-emitting efficiency of the light-emitting functional layer. The intrinsic mobility refers to the mobility of the first carrier and the second carrier in the light-emitting functional layer without the second bias driving signal.

[0012] In the technical solution, according to the intrinsic mobility of the electron and the intrinsic mobility of the hole in the light-emitting composite layer, the first carrier side with more mobility is controlled by the grid, so as to reduce the mobility of the first carrier, and then the light-emitting efficiency can be increased.

[0013] In an embodiment, the light-emitting functional structure is an LED, an OLED or a QLED. When the light-emitting functional structure is the OLED, a first carrier injection layer is further arranged between the first conductive electrode layer and the first carrier transport layer, and a second carrier injection layer is further arranged between the second conductive electrode layer and the second carrier transport layer.

[0014] In an embodiment, the first conductive electrode layer is a transparent conductive electrode, at least one of the second conductive electrode layer and the current grid electrode layer is a transparent conductive electrode, and the second conductive electrode layer or the current grid electrode layer corresponding to the light-out side of the light-emitting device structure is a transparent conductive electrode.

[0015] In an embodiment, the first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole; the second bias driving signal is configured to:

[0016] The current grid electrode layer applies a positive-phase potential to the first conductive electrode layer to increase the migration amount of the first carrier to the light-emitting functional layer, to increase the hole-electron pair recombination amount and recombination efficiency of the light-emitting functional layer, and to increase the light-emitting brightness and light-emitting efficiency.

[0017] In this technical solution, since the intrinsic mobility of the hole carrier is small, the current grid on the hole side applies a positive-phase potential to the conductive electrode layer on the hole side to increase the mobility of the hole carrier, thereby increasing the light-emitting brightness and light-emitting efficiency.

[0018] In an embodiment, the first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electron in the light-emitting functional layer is less than the intrinsic mobility of the hole, and the second bias driving signal is configured to: the current grid electrode layer applies a negative-phase potential to the first conductive electrode layer to increase the migration amount of the electron to the light-emitting functional layer, to increase the hole-electron pair recombination amount and recombination efficiency of the light-emitting functional layer, and to increase the light-emitting brightness and light-emitting efficiency.

[0019] In this technical solution, since the intrinsic mobility of the electron carrier is small, the current grid on the electron side applies a negative-phase potential to the conductive electrode layer on the hole side to increase the mobility of the electron carrier, thereby increasing the light-emitting brightness and light-emitting efficiency.

[0020] In an embodiment, the first carrier is an electron, the second carrier is a hole, and the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole;

[0021] The second bias driving signal is configured as one of the following:

[0022] The current grid electrode layer applies a negative-phase potential to the first conductive electrode layer to increase the migration amount of the electron to the light-emitting functional layer, to increase the hole-electron pair recombination amount of the light-emitting functional layer, and to increase the light-emitting brightness;

[0023] or the current grid electrode layer applies a positive potential to the first conductive electrode layer to reduce the amount of electron migration to the light-emitting functional layer, to improve the hole-pair recombination efficiency of the light-emitting functional layer and to improve the light-emitting efficiency.

[0024] In this technical solution, the current grid is on the side of the electron transport layer corresponding to the high-mobility (in the light-emitting recombination layer) electron carrier, at this time, the current grid applies a negative potential to the conductive electrode layer to improve the light-emitting brightness, while the current grid applies a positive potential to the conductive electrode layer to reduce the amount of electron migration in the light-emitting recombination layer, so as to balance the electron and hole migration amounts and improve the light-emitting efficiency.

[0025] In a specific embodiment, the first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer is less than the intrinsic mobility of the hole;

[0026] The second bias driving signal is configured as one of the following:

[0027] The current grid electrode layer applies a positive potential to the first conductive electrode layer to increase the amount of hole migration to the light-emitting functional layer, to improve the hole-pair recombination amount of the light-emitting functional layer and to improve the light-emitting brightness;

[0028] or the current grid electrode layer applies a negative potential to the first conductive electrode layer to reduce the amount of hole migration to the light-emitting functional layer, to improve the hole-pair recombination efficiency of the light-emitting functional layer and to improve the light-emitting efficiency.

[0029] In this technical solution, the current grid is on the side of the hole transport layer corresponding to the high-mobility (in the light-emitting recombination layer) hole carrier, at this time, the current grid applies a positive potential to the conductive electrode layer to improve the light-emitting brightness, while the current grid applies a negative potential to the conductive electrode layer to reduce the amount of hole migration in the light-emitting recombination layer, so as to balance the electron and hole migration amounts and improve the light-emitting efficiency.

[0030] In a second aspect of the present application, a display panel based on current grid light-emitting regulation is provided, the panel comprising:

[0031] A panel array composed of a light-emitting device structure based on current grid light-emitting regulation as described in the first aspect of the present application.

[0032] In the technical solution, the current grid is arranged, the current grid can drive the recombination of electron-hole pairs in the light-emitting functional layer of the original first conductive electrode layer and the second conductive electrode layer, and under the bias driving of the current grid, the carrier mobility can be controlled, and based on this, the light-emitting brightness and / or light-emitting efficiency of the light-emitting functional layer can be controlled. In addition, the driving efficiency of the grid control is higher than that of the voltage grid, the response speed of the light-emitting brightness / light-emitting efficiency is improved, and the shielding effect of the conductive electrode layer is smaller. In the technical solution, the current grid current limiting injection layer is also arranged, the current between the first conductive electrode layer and the current grid electrode layer can be limited, and the device is prevented from being burned out due to excessive inter-electrode current.

[0033] The present application has the following advantages: by arranging the current grid, the current grid can drive the recombination of electron-hole pairs in the light-emitting functional layer of the original first conductive electrode layer and the second conductive electrode layer, and under the bias driving of the current grid, the carrier mobility can be controlled, and based on this, the light-emitting brightness and / or light-emitting efficiency of the light-emitting functional layer can be controlled. In addition, the driving efficiency of the grid control is higher than that of the voltage grid, the response speed of the light-emitting brightness / light-emitting efficiency is improved, and the shielding effect of the conductive electrode layer is smaller. In the technical solution, the current grid current limiting injection layer is also arranged, the current between the first conductive electrode layer and the current grid electrode layer can be limited, and the device is prevented from being burned out due to excessive inter-electrode current. BRIEF DESCRIPTION OF DRAWINGS

[0034] Figure 1 is a schematic diagram of a light-emitting device structure based on current grid light-emitting regulation in one embodiment of the present application;

[0035] Figure 2 is a schematic diagram of a light-emitting device structure based on increasing minority carrier injection to improve light-emitting efficiency in another embodiment of the present application;

[0036] Figure 3 is a schematic diagram of a light-emitting device structure based on reducing majority carrier injection to improve light-emitting efficiency in another embodiment of the present application;

[0037] Figure 4 is a schematic diagram of a light-emitting device structure based on OLED in one embodiment of the present application;

[0038] Figure 5 is a schematic diagram of a light-emitting device structure in embodiment 1 of the present application;

[0039] Figure 6 is a schematic diagram of a light-emitting device structure in embodiment 3 of the present application;

[0040] Figure 7is a structural schematic diagram of a structure driving mode one of the light-emitting device structure of embodiment 3 of the present application;

[0041] Figure 8 is a structural schematic diagram of a structure driving mode two of the light-emitting device structure of embodiment 3 of the present application;

[0042] Figure 9 is a structural schematic diagram of a structure driving mode one of the light-emitting device structure of embodiment 4 of the present application;

[0043] Figure 10 is a structural schematic diagram of a structure driving mode two of the light-emitting device structure of embodiment 4 of the present application. DETAILED DESCRIPTION

[0044] The embodiments of the present application are described in detail below, examples of which are shown in the accompanying drawings, wherein the same or similar notations represent the same or similar elements or elements having the same or similar functions throughout. The embodiments described below by referring to the accompanying drawings are exemplary only, for the purpose of explaining the present application, and should not be understood as a limitation to the present application.

[0045] In the description of the present application, it needs to be understood that the orientation or positional relationship indicated by the terms "center", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and therefore cannot be understood as indicating or implying that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation to the present application.

[0046] In the description of the present application, it needs to be understood that, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "setting" should be understood broadly, for example, it can be fixedly connected, set, or detachably connected, set, or integrally connected, set. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0047] The embodiment of the present application provides a light-emitting device structure based on current grid light-emitting regulation, as shown in Figures 1-10 The device structure includes: a current grid structure 200 and a light-emitting functional structure 100 arranged in a stack; the light-emitting functional structure 100 sequentially stacks: a first conductive electrode layer 101, a first carrier transport layer 102, a light-emitting functional layer 103, a second carrier transport layer 104, and a second conductive electrode layer 105; the current grid structure 200 sequentially stacks: the current grid electrode layer 201, the current grid current-limiting injection layer 202, and the current grid transport layer 203;

[0048] The first carrier transport layer 102 is used to transport the first carrier, and the second transport layer is used to transport the second carrier; the current gate transport layer 203 is in contact with the first conductive electrode layer 101; the first carrier and the second carrier are mutually repulsive and are either electrons or holes.

[0049] When the device structure emits light, a first driving signal is applied between the first conductive electrode layer 101 and the second conductive electrode layer 105 to drive the hole-electron recombination of the light-emitting functional layer 103 to emit light. A second bias driving signal 302 is applied between the current gate electrode layer 201 and the first conductive electrode layer 101 to control the migration amount of the first charge carriers participating in recombination and to control the luminous brightness and / or luminous efficiency of the light-emitting functional layer 103.

[0050] Typically, the current gate current limiting injection layer 202 is used to control the current between the first conductive electrode layer 101 and the current gate electrode layer 201 to prevent the inter-electrode current from being too large and burning out the device.

[0051] In this invention, by setting a current gate electrode layer 201 and a current gate transport layer 203, and when a bias driving signal is applied, holes or electrons will be injected into the corresponding conductive electrode layer under the control of the current gate, thereby affecting the hole or electron injection corresponding to the light-emitting functional layer 103 and changing the carrier migration amount of hole-electron recombination, it is possible to control the luminous brightness and / or luminous efficiency.

[0052] like Figures 2-3 As shown, in this embodiment of the invention, the current gate structure 200 can be disposed on the transport layer side corresponding to carriers with low intrinsic mobility or high intrinsic mobility in the light-emitting composite layer. Accordingly, when the current gate structure 200 is disposed on the transport layer side corresponding to minority carriers, increasing the injection amount of minority carriers into the light-emitting functional layer 103 can improve the device's luminous brightness and luminous efficiency. Conversely, when the current gate structure 200 is disposed on the transport layer side corresponding to majority carriers, reducing the injection amount of a certain number of carriers into the light-emitting functional layer 103 can improve the device's luminous efficiency (the corresponding luminous brightness will decrease).

[0053] Typical, such as Figure 2As shown, the intrinsic mobility of the first charge carrier in the light-emitting functional layer 103 is less than that of the second charge carrier. The current gate electrode layer 201 applies a second bias drive signal 302 to the first conductive electrode layer 101 to increase the migration of the first charge carrier, thereby improving the luminous brightness and luminous efficiency of the light-emitting functional layer 103. The intrinsic mobility refers to the mobility of the first charge carrier and the second charge carrier in the light-emitting functional layer 103 when the second bias drive signal 302 is not applied.

[0054] Another typical example is... Figure 3 As shown, the intrinsic mobility of the first charge carrier in the light-emitting functional layer 103 is greater than that of the second charge carrier. A second bias driving signal 302 is applied between the current gate electrode layer 201 and the first conductive electrode layer 101 to reduce the migration of the first charge carrier, thereby improving the luminous efficiency of the light-emitting functional layer 103. The intrinsic mobility refers to the mobility of the first charge carrier and the second charge carrier in the light-emitting functional layer 103 when the second bias driving signal 302 is not applied.

[0055] It is worth mentioning that, in this embodiment of the invention, the light-emitting functional structure 100 is an LED, OLED, or QLED; wherein, for example... Figure 4 As shown, when the light-emitting functional structure 100 is the OLED, a first carrier injection layer is further included between the first conductive electrode layer 101 and the first carrier transport layer 102, and a second carrier injection layer is further included between the second conductive electrode layer 105 and the second carrier transport layer 104.

[0056] Furthermore, optionally, in this embodiment of the invention, the first conductive electrode layer 101 is a transparent conductive electrode, and at least one of the second conductive electrode layer 105 and the current gate electrode layer 201 is a transparent conductive electrode, and the second conductive electrode layer 105 or the current gate electrode layer 201 corresponding to the light-emitting side of the light-emitting device structure is a transparent conductive electrode.

[0057] Example 1

[0058] Based on the above, in the first embodiment of the present invention, as follows: Figure 5 As shown, the current gate controlled light-emitting device structure includes, in sequence: a second conductive electrode layer 105, an electronic second carrier transport layer 104, a light-emitting functional layer 103, a hole first carrier transport layer 102, a first conductive layer, a hole current gate transport layer 203, a hole current gate current limiting injection layer 202, and a current gate electrode layer 201.

[0059] The first charge carrier is a hole, the second charge carrier is an electron, and the intrinsic mobility of electrons in the light-emitting functional layer 103 is greater than the intrinsic mobility of holes; the second bias drive signal 302 is configured as follows:

[0060] The current gate electrode layer 201 applies a positive phase potential to the first conductive electrode layer 101 to increase the migration of the first charge carriers to the light-emitting functional layer 103, thereby improving the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer 103 and increasing the luminous brightness and luminous efficiency.

[0061] In Example 1, the majority carriers of the light-emitting functional layer 103 are electrons, and the first carriers are holes; when the second bias driving signal 302 applies a positive phase potential, it can simultaneously increase the luminous efficiency and luminous brightness.

[0062] Example 2

[0063] like Figure 6 As shown, in the second embodiment of the present invention, the current gate controlled light-emitting device structure sequentially includes: a second conductive electrode layer 105, a hole-type second carrier transport layer 104, a light-emitting functional layer 103, an electronic first carrier transport layer 102, a first conductive layer, an electronic current gate transport layer 203, an electronic current gate current limiting injection layer 202, and a current gate electrode layer 201.

[0064] The first charge carrier is an electron, and the second charge carrier is a hole. The intrinsic mobility of electrons in the light-emitting functional layer 103 is less than that of holes (the majority carrier is a hole). The second bias drive signal 302 is configured to apply a negative phase potential to the current gate electrode layer 201 relative to the first conductive electrode layer 101 to increase the amount of electron migration to the light-emitting functional layer 103, thereby improving the hole-pair recombination amount and recombination efficiency of the light-emitting functional layer 103 and improving the luminous brightness and luminous efficiency.

[0065] In Example 2, the majority carrier is a hole and the first carrier is an electron. When the second bias driving signal 302 applies a negative phase potential, it can simultaneously increase the luminous efficiency and luminous brightness.

[0066] Example 3

[0067] like Figures 7-8 As shown, in the third embodiment of the present invention, the current gate controlled light-emitting device structure sequentially includes: a second conductive electrode layer 105, a second carrier transport layer 104 with holes, a light-emitting functional layer 103, an electronic first carrier transport layer 102, a first conductive layer, an electronic current gate transport layer 203, an electronic current gate current limiting injection layer 202, and a current gate electrode layer 201.

[0068] The first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electron in the light-emitting functional layer 103 is greater than the intrinsic mobility of the hole; and the majority carrier is an electron.

[0069] The second bias driving signal 302 is configured as one of the following:

[0070] As shown in FIG. 1, the current gate electrode layer 201 applies a negative potential to the first conductive electrode layer 101 to increase the migration amount of the electron to the light-emitting functional layer 103, so as to increase the hole-electron pair recombination amount of the light-emitting functional layer 103 and improve the light-emitting brightness. Figure 7

[0071] As shown in FIG. 2, the current gate electrode layer 201 applies a positive potential to the first conductive electrode layer 101 to reduce the migration amount of the electron to the light-emitting functional layer 103, so as to increase the hole-electron pair recombination efficiency of the light-emitting functional layer 103 and improve the light-emitting efficiency. Figure 8 In the embodiment 3, the majority carrier of the light-emitting functional layer 103 is an electron, the first carrier is an electron; when the second bias driving signal 302 is a negative potential, the electron injection is increased, the light-emitting brightness is increased (the efficiency is reduced); when the second bias driving signal 302 is a positive potential, the electron injection is reduced, the light-emitting efficiency is improved (the brightness is reduced).

[0072] Embodiment 4

[0073] As shown in FIG. 3, in the fourth embodiment of the present application, the current gate regulated light-emitting device structure comprises, in sequence: a second conductive electrode layer 105, an electron type second carrier transport layer 104, a light-emitting functional layer 103, a hole type first carrier transport layer 102, a first conductive layer, a hole type current gate transport layer 203, a hole type current gate current-limiting injection layer 202, and a current gate electrode layer 201.

[0074] Figures 9-10 The first carrier is a hole, the second carrier is an electron, the intrinsic mobility of the electron in the light-emitting functional layer 103 is less than the intrinsic mobility of the hole; and the majority carrier is a hole.

[0075] The second bias driving signal 302 is configured as one of the following:

[0076] The current gate electrode layer 201 applies a positive potential to the first conductive electrode layer 101 to increase the migration amount of the hole to the light-emitting functional layer 103, so as to increase the hole-electron pair recombination amount of the light-emitting functional layer 103 and improve the light-emitting brightness.

[0077]

[0078] ​​​or the current gate electrode layer 201 applies a negative phase potential to the first conductive electrode layer 101 to reduce the amount of holes migrating to the light-emitting functional layer 103, to improve the hole-pair recombination efficiency of the light-emitting functional layer 103 and to improve the light-emitting efficiency.

[0079] In Embodiment 4, the majority carriers of the light-emitting functional layer 103 are holes, and the first carriers are holes; when the second bias driving signal 302 is a positive phase potential, the hole injection is increased, the light-emitting brightness is increased (efficiency is reduced); when the second bias driving signal 302 is a negative phase potential, the hole injection is reduced, the light-emitting efficiency is improved (brightness is reduced).

[0080] In the second aspect of the present application, a fifth embodiment is provided, i.e. a display panel based on current gate light-emitting regulation, the panel comprising:

[0081] A panel array composed of the light-emitting device structure based on current gate light-emitting regulation provided in any of the preceding embodiments.

[0082] The preferred embodiments of the present application are described in detail above. It should be understood that those of ordinary skill in the art can make many modifications and variations without departing from the concept of the present application. Therefore, any technical solutions obtained by logical analysis, reasoning or limited experiments based on the concept of the present application and the prior art should be within the protection scope defined by the claims.

Claims

1. A light emitting device structure based on current-gate light emission regulation, characterized by, The device structure comprises: a current grid structure and a light-emitting functional structure arranged in a stack; the light-emitting functional structure sequentially comprises: a first conductive electrode layer, a first carrier transport layer, a light-emitting functional layer, a second carrier transport layer, and a second conductive electrode layer; the current grid structure sequentially comprises: a current grid electrode layer, a current grid current-limiting injection layer, and a current grid transport layer; The first carrier transport layer is configured to transport first carriers, and the second carrier transport layer is configured to transport second carriers; the current grid transport layer is adjacent to the first conductive electrode layer; the first carriers and the second carriers are mutually exclusive as one of an electron and a hole; When the device structure is in light-emitting operation, a first driving signal is applied between the first conductive electrode layer and the second conductive electrode layer to drive the light-emitting functional layer to emit light through hole-electron recombination, and a second bias driving signal is applied between the current grid electrode layer and the first conductive electrode layer to control the migration amount of the first carriers participating in the recombination, and to control the light-emitting brightness and / or light-emitting efficiency of the light-emitting functional layer.

2. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The intrinsic mobility of the first carriers in the light-emitting functional layer is less than the intrinsic mobility of the second carriers, and the second bias driving signal applied between the current grid electrode layer and the first conductive electrode layer to increase the migration amount of the first carriers increases the light-emitting brightness and light-emitting efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carriers and the second carriers in the light-emitting functional layer when the second bias driving signal is not applied.

3. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The intrinsic mobility of the first carriers in the light-emitting functional layer is greater than the intrinsic mobility of the second carriers, and the second bias driving signal applied between the current grid electrode layer and the first conductive electrode layer to reduce the migration amount of the first carriers increases the light-emitting efficiency of the light-emitting functional layer; wherein the intrinsic mobility refers to the mobility of the first carriers and the second carriers in the light-emitting functional layer when the second bias driving signal is not applied.

4. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The light-emitting functional structure is an LED, an OLED, or a QLED; when the light-emitting functional structure is the OLED, a first carrier injection layer is further included between the first conductive electrode layer and the first carrier transport layer, and a second carrier injection layer is further included between the second conductive electrode layer and the second carrier transport layer.

5. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The first conductive electrode layer is a transparent conductive electrode, at least one of the second conductive electrode layer and the current grid electrode layer is a transparent conductive electrode, and the second conductive electrode layer or the current grid electrode layer corresponding to the light-emitting side of the light-emitting device structure is a transparent conductive electrode.

6. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The first carriers are holes, the second carriers are electrons, the intrinsic mobility of the electrons in the light-emitting functional layer is greater than the intrinsic mobility of the holes; and the second bias driving signal is configured to: The current gate electrode layer applies a positive phase potential to the first conductive electrode layer to increase the migration amount of the first carrier to the light-emitting functional layer, so as to increase the hole-electron pair recombination amount and recombination efficiency of the light-emitting functional layer and improve the light-emitting brightness and light-emitting efficiency.

7. The light-emitting device structure based on current-gating light-emitting regulation according to claim 1, wherein the first electrode is a transparent electrode. The first carrier is an electron, the second carrier is a hole, the intrinsic mobility of the electron in the light-emitting functional layer is less than the intrinsic mobility of the hole, and the second bias driving signal is configured to: the current gate electrode layer applies a negative phase potential to the first conductive electrode layer to increase the migration amount of the electron to the light-emitting functional layer, so as to increase the hole-electron pair recombination amount and recombination efficiency of the light-emitting functional layer and improve the light-emitting brightness and light-emitting efficiency.

8. The light emitting device structure based on current-gate light emission regulation according to claim 1, wherein, The first carrier is an electron, the second carrier is a hole, and the intrinsic mobility of the electron in the light-emitting functional layer is greater than the intrinsic mobility of the hole. The second bias driving signal is configured as one of: The current gate electrode layer applies a negative phase potential to the first conductive electrode layer to increase the migration amount of the electron to the light-emitting functional layer, so as to increase the hole-electron pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness; Or the current gate electrode layer applies a positive phase potential to the first conductive electrode layer to reduce the migration amount of the electron to the light-emitting functional layer, so as to increase the hole-electron pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

9. The light emitting device structure based on current-gating light emission regulation according to claim 1, wherein, The first carrier is a hole, the second carrier is an electron, and the intrinsic mobility of the electron in the light-emitting functional layer is less than the intrinsic mobility of the hole. The second bias driving signal is configured as one of: The current gate electrode layer applies a positive phase potential to the first conductive electrode layer to increase the migration amount of the hole to the light-emitting functional layer, so as to increase the hole-electron pair recombination amount of the light-emitting functional layer and improve the light-emitting brightness; Or the current gate electrode layer applies a negative phase potential to the first conductive electrode layer to reduce the migration amount of the hole to the light-emitting functional layer, so as to increase the hole-electron pair recombination efficiency of the light-emitting functional layer and improve the light-emitting efficiency.

10. A display panel based on electrogating light-emitting regulation, characterized in that, The panel comprises: A panel array composed of the light-emitting device structure based on current gate light-emitting regulation according to any one of claims 1-9 as a unit.

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