Display panel, manufacturing method thereof and display device

Abstract

The invention discloses a display panel, a manufacturing method thereof and a display device. The first electrode layer comprises a plurality of first electrodes; the auxiliary layer is arranged on one side of the first electrode layer and comprises a plurality of auxiliary parts corresponding to the first electrodes, and the auxiliary parts are arranged on one side of the corresponding first electrodes; the light-emitting layer is arranged on the side, away from the first electrode layer, of the auxiliary layer, the light-emitting layer comprises a plurality of light-emitting parts corresponding to the auxiliary parts, and the light-emitting parts are arranged on the sides, away from the first electrodes, of the corresponding auxiliary parts; the second electrode layer is arranged on one side of the light-emitting layer away from the auxiliary layer; wherein the auxiliary part comprises a first material, the light-emitting part comprises a plurality of quantum dots and a connecting structure connected among the plurality of quantum dots, the connecting structure comprises the first material substituted by a cross-linked structure, and the connecting structure is connected with the quantum dots through the cross-linked structure; according to the display panel, the phenomenon that the light-emitting layer remains in the non-preset area in the patterning process can be avoided, and the display effect of the display panel is improved.

Description

Technical Field

[0001] The present application relates to the field of display technology, and in particular to a display panel and a manufacturing method thereof, and a display device. Background Art

[0002] Quantum dots are extremely tiny semiconductor nanocrystals that are invisible to the naked eye. They are particles with a diameter of less than 10 nanometers. Generally speaking, quantum dots are composed of zinc, cadmium, selenium and sulfur atoms. Quantum dots have a unique characteristic, that is, when stimulated by light or electricity, quantum dots will emit colored light. The color of the light is determined by the material, size and shape of the quantum dots. This characteristic enables quantum dots to change the color of the light emitted by the light source.

[0003] Quantum dot light emitting diode (QLED) display panels have unique advantages, such as wide color gamut, high purity, high brightness, low voltage, and extremely thin appearance, and therefore have great development prospects.

[0004] Currently, photolithography technology is often used to prepare QLED display panels. However, during the patterning process of the quantum dot light-emitting layer in the preset color light-emitting area, the material of the quantum dot light-emitting layer is likely to remain in other color light-emitting areas, thereby affecting the color gamut and the display effect of the display panel. Summary of the invention

[0005] The embodiments of the present application provide a display panel and a manufacturing method thereof, and a display device, which can avoid the phenomenon that the light-emitting layer remains in non-preset areas during the patterning process, improve the color gamut of the display panel, and enhance the display effect of the display panel.

[0006] An embodiment of the present application provides a display panel, comprising:

[0007] A first electrode layer, comprising a plurality of first electrodes;

[0008] an auxiliary layer, disposed on one side of the first electrode layer, the auxiliary layer comprising a plurality of auxiliary parts disposed corresponding to the plurality of first electrodes, the auxiliary parts being disposed on one side of the corresponding first electrodes;

[0009] a light-emitting layer, arranged on a side of the auxiliary layer away from the first electrode layer, the light-emitting layer comprising a plurality of light-emitting parts arranged corresponding to the plurality of auxiliary parts, the light-emitting parts being arranged on a side of the corresponding auxiliary parts away from the first electrode;

[0010] A second electrode layer is disposed on a side of the light-emitting layer away from the auxiliary layer;

[0011] Among them, the auxiliary part includes a first material, the light-emitting part includes a plurality of quantum dots and a connecting structure connected between the plurality of quantum dots, the connecting structure includes the first material replaced by a cross-linking structure, and the connecting structure is connected to the quantum dots through the cross-linking structure.

[0012] In one embodiment of the present application, the first material includes at least one of the following compounds:

[0013]

[0014] In one embodiment of the present application, the connection structure includes at least one of the following structures:

[0015]

[0016] Wherein, * indicates the connection site.

[0017] In one embodiment of the present application, the cross-linked structure replaces hydrogen atoms in the first material.

[0018] In one embodiment of the present application, the light-emitting layer includes a first light-emitting portion, a second light-emitting portion, and a third light-emitting portion, the quantum dots in the first light-emitting portion, the quantum dots in the second light-emitting portion, and the quantum dots in the third light-emitting portion are selected from any one of red quantum dots, green quantum dots, and blue quantum dots, and the quantum dots in the first light-emitting portion, the quantum dots in the second light-emitting portion, and the quantum dots in the third light-emitting portion are different from each other;

[0019] The auxiliary layer includes a first auxiliary portion located between the first electrode and the first light-emitting portion, a second auxiliary portion located between the first electrode and the second light-emitting portion, and a third auxiliary portion located between the first electrode and the third light-emitting portion, and the first material in the first auxiliary portion, the first material in the second auxiliary portion, and the first material in the third auxiliary portion are selected from the same or different first materials.

[0020] In one embodiment of the present application, the quantum dot includes a quantum dot body and a second material connected to the quantum dot body, and the second material is selected from a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms.

[0021] In one embodiment of the present application, the auxiliary layer further includes a third material, and the third material is selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

[0022] In one embodiment of the present application, the display panel further includes a first functional layer, wherein the first functional layer is located at least between the auxiliary portion and the first electrode, and the adhesion between the auxiliary portion and the first functional layer is smaller than the adhesion between the auxiliary portion and the light-emitting portion.

[0023] According to the above-mentioned purpose of the present application, an embodiment of the present application further provides a method for manufacturing a display panel, and the method for manufacturing a display panel comprises the following steps:

[0024] forming a first electrode layer, wherein a plurality of first electrodes are formed in the first electrode layer;

[0025] An auxiliary layer and a light-emitting layer are formed on one side of the first electrode layer, the light-emitting layer is formed on a side of the auxiliary layer away from the first electrode layer, a plurality of auxiliary parts corresponding to the first electrodes are formed in the auxiliary layer, a plurality of light-emitting parts corresponding to the auxiliary parts are formed in the light-emitting layer, the auxiliary parts are arranged on one side of the corresponding first electrode, the light-emitting parts are arranged on one side of the corresponding auxiliary parts away from the first electrode, the auxiliary parts include a first material, the light-emitting parts include a plurality of quantum dots and a connection structure connected between the plurality of quantum dots, the connection structure includes the first material replaced by a cross-linking structure, and the connection structure is connected to the quantum dots through the cross-linking structure; and

[0026] A second electrode layer is formed on a side of the light emitting layer away from the auxiliary layer.

[0027] In one embodiment of the present application, the step of forming an auxiliary layer and a light-emitting layer on one side of the first electrode layer includes:

[0028] The auxiliary material layer is formed by using the first material, and the first material is selected from at least one of the following compounds:

[0029]

[0030] forming a first light-emitting material layer on a side of the auxiliary material layer away from the first electrode layer;

[0031] forming a first light-emitting portion and a light-emitting portion to be etched in the first light-emitting material layer, wherein the auxiliary material layer includes a first auxiliary portion located between the first light-emitting portion and the first electrode and an auxiliary portion to be etched located between the light-emitting portion to be etched and the first electrode;

[0032] The light emitting portion to be etched and the auxiliary portion to be etched are removed.

[0033] In one embodiment of the present application, the step of forming a first light-emitting material layer on a side of the auxiliary material layer away from the first electrode layer includes:

[0034] The first light-emitting material layer is formed by reacting the quantum dots and a cross-linking material, wherein the cross-linking material is selected from the first material substituted with a cross-linking group, and the cross-linking group is selected from at least one of an azide group, a diaziridine group, a carbon-carbon double bond, and a carbon-carbon triple bond.

[0035] In one embodiment of the present application, the cross-linking material includes at least one of the following compounds;

[0036]

[0037]

[0038] According to the above-mentioned purpose of the present application, an embodiment of the present application further provides a display device, which includes the display panel, or a display panel manufactured by the manufacturing method of the display panel.

[0039] The present application provides a display panel and a manufacturing method thereof, and a display device. An auxiliary part is added between the light-emitting part and the first electrode, and the first material in the auxiliary part does not have a cross-linking structure relative to the light-emitting part. Therefore, the first material in the auxiliary part is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part away from the light-emitting part is avoided, thereby reducing the adhesion between the auxiliary part and the film layer on the side of the auxiliary part away from the light-emitting part. Since the auxiliary part is located between the light-emitting part and the first electrode, when the light-emitting part is removed during patterning of the light-emitting layer, the same layer material of the light-emitting part and the same layer material of the auxiliary part below can be removed at the same time, thereby avoiding the phenomenon that the light-emitting layer remains in a non-preset area during the patterning process, thereby improving the color gamut of the display panel and the display effect of the display panel.

[0040] Other features and advantages of the present application will be described in detail in the subsequent detailed description. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application, and those skilled in the art can obtain other drawings based on these drawings without creative work.

[0042] In order to more completely understand the present application and its beneficial effects, the following description will be given in conjunction with the accompanying drawings, wherein the same figure numbers represent the same parts in the following description.

[0043] Figure 1a to Figure 1d A schematic diagram of the manufacturing process of a display panel provided by an embodiment;

[0044] Figure 2 A schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0045] Figure 3 A schematic diagram of a connection structure of quantum dots provided in an embodiment of the present application;

[0046] Figure 4 Another schematic diagram of the structure of a display panel provided in an embodiment of the present application;

[0047] Figure 5 A flow chart of a method for manufacturing a display panel provided in an embodiment of the present application;

[0048] Figures 6 to 10 A schematic diagram of the structure of a manufacturing process of a display panel provided in an embodiment of the present application.

[0049] Description of reference numerals:

[0050] 1. Substrate; 2. Anode; 3. Pixel definition layer; 4. Luminescent material layer; 5. Luminescent layer; 6. Residual material;

[0051] 10. first electrode layer; 11. first electrode;

[0052] 20, auxiliary layer; 21, auxiliary part; 211, first auxiliary part; 212, second auxiliary part; 213, third auxiliary part; 210, auxiliary part to be etched;

[0053] 30, light-emitting layer; 31, light-emitting part; 311, first light-emitting part; 312, second light-emitting part; 313, third light-emitting part; 310, light-emitting material layer; 32, quantum dots; 321, quantum dot body; 322, third material; 33, connection structure; 331, cross-linking structure; 3101, light-emitting part to be etched;

[0054] 40. second electrode layer; 50. array substrate; 60. pixel definition layer; 70. first functional layer; 80. mask. DETAILED DESCRIPTION

[0055] The technical solutions in the embodiments of the present application will be described clearly and completely below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present application.

[0056] Please combine Figure 1a to Figure 1d In the existing quantum dot light-emitting display panel, the manufacturing method of the display panel includes:

[0057] A substrate 1 is provided, and the substrate 1 may include a base plate and a thin film transistor layer disposed on the base plate.

[0058] A plurality of anodes 2 are formed on a substrate 1 .

[0059] A pixel definition layer 3 is formed on the substrate 1 , and a plurality of pixel openings are formed in the pixel definition layer 3 , and one pixel opening may correspondingly expose the surface of one anode 2 .

[0060] A quantum dot material layer 4 is formed on the pixel definition layer 3 .

[0061] The quantum dot material layer 4 is patterned by a mask to form a light-emitting layer 5 located at a preset pixel opening position.

[0062] Among them, functional film layers such as a hole transport layer or an electron blocking layer will also be formed between the anode 2 and the light-emitting layer 5. Since the quantum dot material layer 4 will undergo a cross-linking reaction during the film formation process and will be cross-linked with the underlying functional film layers such as the hole transport layer or the electron blocking layer, the adhesion between the quantum dot material layer 4 and the underlying functional film layers such as the hole transport layer or the electron blocking layer is increased. In the process of removing the quantum dot material layer 4, residual material 6 of the quantum dot material layer 4 will be formed in the non-preset pixel opening. Since the luminous color of the light-emitting layer 5 formed in the preset pixel opening is different from the luminous color of the light-emitting layer 5 to be formed in the non-preset pixel opening, the residual material 6 will affect the luminescence of the light-emitting layer 5 in the non-preset opening, affect the color gamut of the display panel, and affect the display effect of the display panel.

[0063] Please combine Figure 2 as well as Figure 3 An embodiment of the present application provides a display panel, which includes a first electrode layer 10, an auxiliary layer 20, a light-emitting layer 30 and a second electrode layer 40.

[0064] Among them, the first electrode layer 10 includes multiple first electrodes 11; the auxiliary layer 20 is arranged on one side of the first electrode layer 10, the auxiliary layer 20 includes multiple auxiliary parts 21 arranged corresponding to the multiple first electrodes 11, and the auxiliary parts 21 are arranged on the side of the corresponding first electrodes 11; the light-emitting layer 30 is arranged on the side of the auxiliary layer 20 away from the first electrode layer 10, the light-emitting layer 30 includes multiple light-emitting parts 31 arranged corresponding to the multiple auxiliary parts 21, and the light-emitting parts 31 are arranged on the side of the corresponding auxiliary parts 21 away from the first electrode 11; the second electrode layer 40 is arranged on the side of the light-emitting layer 30 away from the auxiliary layer 20.

[0065] Furthermore, the auxiliary part 21 includes a first material, the light-emitting part 31 includes a plurality of quantum dots 32 and a connecting structure 33 connected between the plurality of quantum dots 32, the connecting structure 33 includes the first material replaced by a cross-linking structure 331, and the connecting structure 33 is connected to the quantum dots 32 through the cross-linking structure 331.

[0066] In the implementation process, the embodiment of the present application adds the auxiliary part 21 between the light-emitting part 31 and the first electrode 11, and the first material in the auxiliary part 21 is not provided with the cross-linking structure 331 relative to the light-emitting part 31. Therefore, the first material in the auxiliary part 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31 is avoided, thereby reducing the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31. Since the auxiliary part 21 is located between the light-emitting part 31 and the first electrode 11, when the light-emitting part 31 is removed during the patterning of the light-emitting layer 30, the same layer material of the light-emitting part 31 and the same layer material of the auxiliary part 21 below can be removed at the same time, thereby avoiding the phenomenon that the light-emitting layer 30 remains in the non-preset area during the patterning process, improving the color gamut of the display panel, and improving the display effect of the display panel.

[0067] Specifically, please continue to combine Figure 2 and Figure 3 The display panel further includes an array substrate 50 and a pixel definition layer 60 , wherein the first electrode layer 10 is disposed on the array substrate 50 , and the pixel definition layer 60 is disposed on the first electrode layer 10 .

[0068] In some embodiments, the array substrate 50 may include a substrate and a thin film transistor layer disposed on the substrate, wherein the thin film transistor layer is located on a side of the substrate close to the first electrode layer 10. The substrate may be a hard substrate, such as a glass substrate; or the substrate may be a flexible substrate, such as a substrate formed of polyimide. When the substrate is a flexible substrate, the substrate may be formed of multiple sub-substrates with the same material, such as polyimide, and adjacent sub-substrates are bonded by bonding sub-layers.

[0069] In some embodiments, the thin film transistor layer includes a thin film transistor, the thin film transistor includes a semiconductor located on the substrate, and the semiconductor can be formed of polysilicon or a metal oxide (such as indium gallium zinc oxide). Wherein, the semiconductor is divided into a channel region and a source region and a drain region formed on both sides of the channel region. The thin film transistor layer also includes a first gate insulating layer, and the first gate insulating layer covers the semiconductor. The thin film transistor also includes a first gate formed on the first gate insulating layer, and the first gate overlaps with the channel region. The first gate can be formed as a plurality of layers or a single layer including a low resistance material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof, or a material with high corrosion resistance. The thin film transistor layer also includes a second gate insulating layer, and the second gate insulating layer covers the first gate. The thin film transistor also includes a second gate located on the second gate insulating layer, and the second gate overlaps with the first gate. The second gate can be formed as a plurality of layers or a single layer including a low resistance material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof, or a material with high corrosion resistance. The thin film transistor layer also includes a first interlayer insulating layer formed on the second gate. The first interlayer insulating layer, the first gate insulating layer, and the second gate insulating layer include a source contact hole and a drain contact hole, and the source region and the drain region are exposed through the source contact hole and the drain contact hole, respectively.

[0070] The thin film transistor also includes a source and a drain arranged in the same layer, the source and the drain are both formed on the first interlayer insulating layer, the source is connected to the source region through the source contact hole, and the drain is connected to the drain region through the drain contact hole. The source and the drain may be multiple layers or a single layer formed of a low resistance material such as Al, Ti, Mo, Cu, Ni, or an alloy thereof, or a material with high corrosion resistance. For example, the source and the drain may be a triple layer of Ti / Cu / Ti, Ti / Ag / Ti, Ti / Al / Ti or Mo / Al / Mo or other single or multilayer structures.

[0071] In some embodiments, the array substrate 50 further includes a planar layer located between the thin film transistor layer and the first electrode layer 10 , and the planar layer covers the source electrode and the drain electrode.

[0072] In some embodiments, the pixel definition layer 60 is disposed on the planar layer and the first electrode layer 10, and a plurality of pixel openings are opened in the pixel definition layer 60, and the plurality of pixel openings are disposed one-to-one correspondingly to the plurality of first electrodes 11, and the pixel openings leak out the surface of the corresponding first electrode 11.

[0073] In some embodiments, the plurality of auxiliary portions 21 in the auxiliary layer 20 are disposed in the plurality of pixel openings. For example, one auxiliary portion 21 is located in one pixel opening, and each of the auxiliary portions 21 is located on a side of a corresponding first electrode 11 away from the array substrate 50 .

[0074] In some embodiments, the plurality of light-emitting portions 31 in the light-emitting layer 30 are arranged corresponding to the plurality of pixel openings. For example, one of the light-emitting portions 31 is located within one of the pixel openings, or one of the light-emitting portions 31 is partially located within the pixel opening, and the other portion extends outside the pixel opening and is located on a side of the pixel definition layer 60 away from the array substrate 50; and each of the light-emitting portions 31 is located on a side of a corresponding auxiliary portion 21 away from the first electrode 11.

[0075] Furthermore, the second electrode layer 40 is disposed on a side of the light emitting layer 30 away from the auxiliary layer 20 , and the second electrode layer 40 covers the plurality of light emitting portions 31 and the pixel definition layer 60 .

[0076] It should be noted that the light-emitting layer 30 provided in the embodiment of the present application can be a quantum dot light-emitting layer, and the first electrode layer 10 can be an anode, the second electrode layer 40 can be a cathode, and the holes provided by the first electrode layer 10 and the electrons provided by the second electrode layer 40 are converged in the light-emitting layer 30 to form photons, and light can be emitted by recombination of photons.

[0077] In some embodiments, please refer to Figure 4 The display panel also includes a first functional layer 70, which is located between the auxiliary layer 20 and the first electrode layer 10; wherein the first functional layer 70 may include at least one of a hole injection layer, a hole transport layer and an electron blocking layer.

[0078] For example, the first functional layer 70 may include a hole injection layer and a hole transport layer, and the hole transport layer is located between the hole injection layer and the auxiliary layer 20 , and the auxiliary layer 20 is disposed on a side of the hole transport layer away from the hole injection layer.

[0079] Alternatively, the first functional layer 70 includes a hole injection layer, a hole transport layer and an electron blocking layer, and the hole transport layer is located on a side of the hole injection layer away from the first electrode layer 10, the electron blocking layer is located on a side of the hole transport layer away from the first electrode layer 10, and the auxiliary layer 20 is arranged on a side of the electron blocking layer away from the hole transport layer.

[0080] Alternatively, the first functional layer 70 includes a hole transport layer and an electron blocking layer, and the electron blocking layer is located on a side of the hole transport layer away from the first electrode layer 10, and the auxiliary layer 20 is disposed on a side of the electron blocking layer away from the hole transport layer.

[0081] In some embodiments, the first functional layer 70 is located at least between the auxiliary portion 21 and the first electrode 11, that is, the first functional layer 70 can be located in the pixel opening and between the auxiliary portion 21 and the first electrode 11; or, the first functional layer 70 can cover the entire surface of the pixel definition layer 60 and extend into the pixel opening, and the first functional layer 70 in the pixel opening is located between the auxiliary portion 21 and the first electrode 11.

[0082] It can be understood that, in some embodiments, the display panel also includes a second functional layer arranged between the light-emitting layer 30 and the second electrode layer 40, and the second functional layer may include at least one of a hole blocking layer, an electron transport layer and an electron injection layer. When the second functional layer may include a hole blocking layer, an electron transport layer and an electron injection layer, the hole blocking layer is located on the side of the light-emitting layer 30 away from the auxiliary layer 20, the electron transport layer is located on the side of the hole blocking layer away from the light-emitting layer 30, and the electron injection layer is located on the side of the electron transport layer away from the hole blocking layer.

[0083] In the embodiment of the present application, the auxiliary portion 21 is located on a surface of the first functional layer 70 away from the array substrate 50 , and the light emitting portion 31 is located on a surface of the auxiliary portion 21 away from the first functional layer 70 .

[0084] The auxiliary part 21 includes a first material, the light-emitting part 31 includes a plurality of quantum dots 32 and a connecting structure 33 connected between the quantum dots 32, the connecting structure 33 includes the first material replaced by a cross-linking structure 331, and the connecting structure 33 is connected to the quantum dots 32 via the cross-linking structure 331; therefore, the first material in the auxiliary part 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31 is avoided, thereby reducing the adhesion between the auxiliary part 21 and the film layer on the side of the auxiliary part 21 away from the light-emitting part 31, thereby avoiding the phenomenon that the light-emitting layer 30 remains in a non-preset area during the patterning process, thereby improving the color gamut of the display panel and the display effect of the display panel.

[0085] In some embodiments, the adhesion between the auxiliary portion 21 and the first functional layer 70 is smaller than the adhesion between the auxiliary portion 21 and the light-emitting portion 31; thereby facilitating the peeling of the auxiliary portion 21 from the first functional layer 70 and reducing the residual phenomenon of the light-emitting layer 30 during the patterning process.

[0086] Specifically, in some embodiments, the light-emitting layer 30 includes a first light-emitting portion 311, a second light-emitting portion 312 and a third light-emitting portion 313, and the quantum dots in the first light-emitting portion 311, the quantum dots in the second light-emitting portion 312 and the quantum dots in the third light-emitting portion 313 are selected from any one of red quantum dots, green quantum dots and blue quantum dots, and the quantum dots in the first light-emitting portion 311, the quantum dots in the second light-emitting portion 312 and the quantum dots in the third light-emitting portion 313 are different from each other.

[0087] It should be noted that the first light-emitting portion 311, the second light-emitting portion 312 and the third light-emitting portion 313 are respectively selected as quantum dots of different colors. For example, the first light-emitting portion 311 is selected as red quantum dots, the second light-emitting portion 312 is selected as green quantum dots, and the third light-emitting portion 313 is selected as blue quantum dots, thereby realizing full-color display of the display panel.

[0088] The auxiliary layer 20 includes a first auxiliary portion 211 located between the first electrode 11 and the first light-emitting portion 311, a second auxiliary portion 212 located between the first electrode 11 and the second light-emitting portion 312, and a third auxiliary portion 213 located between the first electrode 11 and the third light-emitting portion 313, and the first material in the first auxiliary portion 211, the first material in the second auxiliary portion 212, and the first material in the third auxiliary portion 213 are selected from the same or different first materials.

[0089] In the embodiment of the present application, when the first light-emitting portion 311 is being prepared, an auxiliary material layer may be first formed at least in each pixel opening, for example, a first auxiliary portion 211 is formed in a preset pixel opening corresponding to the first light-emitting portion 311, and an auxiliary portion 210 to be etched is formed in other non-preset pixel openings, and the auxiliary portion 210 to be etched and the first auxiliary portion 211 are formed by the same process; then, a whole layer of the first light-emitting material layer is formed on the pixel definition layer 60 and the auxiliary material layer, and in the preset pixel opening, the first light-emitting material layer is located on the first auxiliary portion 211, and in the non-preset pixel opening, the first light-emitting material layer is located on the auxiliary portion 210 to be etched; wherein, the first light-emitting material layer may include a plurality of quantum dots 32 and The connection structure 33 is connected to the quantum dots 32, so that the first light-emitting material layer will undergo a cross-linking reaction during the film formation process; then, the first light-emitting material layer is patterned to remove the first light-emitting material layer and the auxiliary part 210 to be etched in the non-preset pixel opening, and the first light-emitting part 311 is formed in the preset pixel opening; since the first material in the auxiliary part 210 to be etched is not cross-linked, and cross-linking between the first material and the first functional layer 70 is avoided, the adhesion between the auxiliary part 21 and the first functional layer 70 is reduced, and the first light-emitting material layer is avoided from remaining in the non-preset area during the patterning process, thereby improving the color gamut of the display panel and improving the display effect of the display panel.

[0090] It can be understood that the subsequent preparation process of the second light-emitting portion 312 and the third light-emitting portion 313 can be carried out with reference to the preparation process of the first light-emitting portion 311, and the material of the second light-emitting portion 312 and the material of the third light-emitting portion 313 can also be avoided from remaining in the non-preset pixel openings, so as to improve the color gamut within the display panel and enhance the display effect of the display panel.

[0091] In some embodiments, the first material includes at least one of the following compounds: ((1E,4E)-1,5-bis(2,3,5,6-tetrafluorophenyl)penta-1,4-dien-3-one), (ethylene bis(2,3,5,6-tetrafluorobenzoate)),

[0092] ((3E,5E)-3,5-bis(2,3,5,6-tetrafluorobenzyl)-1-methylpiperidin-4-one), (3,3'-(4,4'-(perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-propidine (4)).

[0093] In some embodiments, the connection structure 33 includes at least one of the following structures:

[0094]

[0095] Among them, * represents a connection site, and the cross-linking structure 331 can be formed by cross-linking at least one unsaturated bond selected from an azide group, a diaziridine group, a carbon-carbon double bond, and a carbon-carbon triple bond; and the first material is not provided with the cross-linking structure 331 relative to the connection structure 33, and thus, during the film formation process of the auxiliary part 21, cross-linking will not occur, and cross-linking will not occur between the auxiliary part 21 and the first functional layer 70, and thus, the auxiliary part 21 can be easily removed during the patterning process, thereby reducing the residual material of the light-emitting layer 30.

[0096] It should be noted that the auxiliary part 21 does not contain the quantum dots 32; if the auxiliary part 21 contains the quantum dots 32, the thickness of the film layer with the quantum dots 32 stacked in the display panel will increase, resulting in an increase in the driving voltage of the display panel. Therefore, in the embodiment of the present application, the auxiliary part 21 does not contain the quantum dots 32, which can ensure that the display panel is driven at a suitable or smaller voltage.

[0097] In some embodiments, the cross-linked structure 331 replaces hydrogen atoms in the first material, for example, it can replace hydrogen atoms on benzene rings on both sides of the first material, or replace hydrogen atoms on alkyl chains on both sides of the first material.

[0098] In some embodiments, the quantum dot 32 includes a quantum dot body 321 and a second material 322 connected to the quantum dot body 321, and the second material 322 is selected from a substituted or unsubstituted alkyl group having a carbon atom number of 1 to 4; and the quantum dot body 321 is modified with the second material 322, which can improve the distribution uniformity and cross-linking uniformity of the quantum dots 32 in the light-emitting layer 30; wherein the quantum dot 32 is connected to the connecting structure 33 through the second material 322, and the substituent in the second material 322 can be the same as the cross-linking structure 331, for example, it can be formed by cross-linking at least one unsaturated bond selected from an azide group, a diaziridine group, a carbon-carbon double bond, and a carbon-carbon triple bond.

[0099] In some embodiments, the auxiliary layer 20 also includes a third material, and the third material is selected from a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms; the substituent in the third material may include an amino group; it can be understood that in the manufacturing process, the material of the auxiliary layer 20 can be regarded as the material of the light-emitting layer 30 by removing the quantum dots 32 and the cross-linking groups.

[0100] As mentioned above, in the embodiment of the present application, the auxiliary portion 21 is additionally provided between the light-emitting portion 31 and the first electrode 11, and the first material in the auxiliary portion 21 is not provided with the cross-linking structure 331 relative to the light-emitting portion 31. Therefore, the first material in the auxiliary portion 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary portion 21 away from the light-emitting portion 31 is avoided, thereby reducing the adhesion between the auxiliary portion 21 and the film layer on the side of the auxiliary portion 21 away from the light-emitting portion 31. Since the auxiliary portion 21 is located between the light-emitting portion 31 and the first electrode 11, when the light-emitting portion 31 is removed during the patterning of the light-emitting layer 30, the same layer material of the light-emitting portion 31 and the same layer material of the auxiliary portion 21 below can be removed at the same time, thereby avoiding the phenomenon that the light-emitting layer 30 remains in a non-preset area during the patterning process, thereby improving the color gamut of the display panel and improving the display effect of the display panel.

[0101] In addition, the present application also provides a method for manufacturing a display panel. Figure 2 , Figure 3 , Figure 4 , Figure 5 as well as Figures 6 to 10 , the manufacturing method of the display panel comprises the following steps:

[0102] S10 , forming a first electrode layer 10 , wherein a plurality of first electrodes 11 are formed in the first electrode layer 10 .

[0103] S20. An auxiliary layer 20 and a light-emitting layer 30 are formed on one side of the first electrode layer 10, the light-emitting layer is formed on a side of the auxiliary layer 20 away from the first electrode layer, a plurality of auxiliary parts 21 corresponding to the first electrodes 11 are formed in the auxiliary layer 20, a plurality of light-emitting parts 31 corresponding to the plurality of auxiliary parts 21 are formed in the light-emitting layer 30, the auxiliary parts 21 are arranged on a side of the corresponding first electrode 11, the light-emitting parts 31 are arranged on a side of the corresponding auxiliary parts 21 away from the first electrode 11, the auxiliary parts 21 include a first material, the light-emitting parts 31 include a plurality of quantum dots 32 and a connecting structure 33 connected between the plurality of quantum dots 32, the connecting structure 33 includes the first material replaced by a cross-linking structure 331, and the connecting structure 33 is connected to the quantum dots 32 through the cross-linking structure 331.

[0104] S30 , forming a second electrode layer 40 on a side of the light emitting layer 30 away from the auxiliary layer 20 .

[0105] Specifically, in step S10 , an array substrate 50 is first provided.

[0106] Next, a first electrode layer 10 is formed on the array substrate 50 , and a plurality of first electrodes 11 are formed in the first electrode layer 10 .

[0107] In step S20, a pixel definition layer 60 is formed on the array substrate 50. A plurality of pixel openings are formed in the pixel definition layer 60. One pixel opening is provided corresponding to one first electrode 11 to expose the surface of the corresponding first electrode 11. Figure 6 shown.

[0108] In some embodiments, the display panel also includes a first functional layer 70 formed in the pixel opening, and the first functional layer 70 is located on the side of the first electrode layer 10 away from the array substrate 50; wherein the first functional layer 70 may include at least one of a hole injection layer, a hole transport layer, and an electron blocking layer.

[0109] Next, an auxiliary material layer is formed at least in each of the pixel openings, and the auxiliary material layer includes a first auxiliary portion 211 located in the preset pixel opening and an auxiliary portion to be etched 210 located in the non-preset pixel opening, such as Figure 7 shown.

[0110] In some embodiments, the first functional layer 70 may include a hole injection layer and a hole transport layer, and the hole transport layer is located between the hole injection layer and the auxiliary layer 20, and the auxiliary material layer is disposed on a side of the hole transport layer away from the hole injection layer.

[0111] In some embodiments, the first functional layer 70 includes a hole injection layer, a hole transport layer and an electron blocking layer, and the hole transport layer is located on a side of the hole injection layer away from the first electrode layer 10, the electron blocking layer is located on a side of the hole transport layer away from the first electrode layer 10, and the auxiliary material layer is arranged on a side of the electron blocking layer away from the hole transport layer.

[0112] In some embodiments, the first functional layer 70 includes a hole transport layer and an electron blocking layer, and the electron blocking layer is located on a side of the hole transport layer away from the first electrode layer 10, and the auxiliary material layer is disposed on a side of the electron blocking layer away from the hole transport layer.

[0113] In some embodiments, the first functional layer 70 is at least located between the auxiliary material layer and the first electrode 11, that is, the first functional layer 70 can be located in the pixel opening and between the auxiliary portion 21 and the first electrode 11; or, the first functional layer 70 can cover the entire surface of the pixel definition layer 60 and extend into the pixel opening, and the first functional layer 70 in the pixel opening is located between the auxiliary material layer and the first electrode 11.

[0114] The auxiliary material layer is formed by using the first material, and the first material is selected from at least one of the following compounds:

[0115]

[0116] A first light emitting material layer 310 is formed on a side of the auxiliary material layer away from the first electrode layer 10, such as Figure 8 shown.

[0117] Specifically, the first light-emitting material layer 310 is formed by reacting the quantum dots 32 and a cross-linking material, wherein the cross-linking material is selected from the first material substituted with a cross-linking group, and the cross-linking group is selected from at least one of an azide group, a diaziridine group, a carbon-carbon double bond, and a carbon-carbon triple bond.

[0118] In some embodiments, the cross-linking material comprises at least one of the following compounds;

[0119] ((1E,4E)-1,5-bis(4-azido-2,3,5,6-tetrafluorophenyl)penta-1,4-dien-3-one), (ethylene bis(4-azido-2,3,5,6-tetrafluorobenzoate)), ((3E,5E)-3,5-bis(4-azido-2,3,5,6-tetrafluorobenzyl)-1-methylpiperidin-4-one), (3,3'-(4,4'-(perfluorobutane-1,4-diyl)bis(4,1-phenylene))bis(3-(trifluoromethyl)-3H-diaziridine (4)).

[0120] The first light-emitting material layer 310 is subjected to light irradiation treatment using a mask 80, wherein the first light-emitting material layer 310 corresponding to a first area in the mask 80 forms the first light-emitting portion 311 after the light irradiation treatment, and the first light-emitting material layer 310 corresponding to a second area in the mask 80 forms the light-emitting portion 3101 to be etched after the light irradiation treatment, and the auxiliary material layer includes a first auxiliary portion 211 located between the first light-emitting portion 311 and the first electrode 11 and an auxiliary portion 210 to be etched located between the light-emitting portion 3101 to be etched and the first electrode 11, and the auxiliary portion 210 to be etched is located in a non-preset opening, such as Fig. 9 shown.

[0121] The transmittance of the first region and the second region in the mask 80 are different. For example, the transmittance of the first region is greater than the transmittance of the second region, or the first region is transparent and the second region is opaque.

[0122] Next, the light emitting portion 3101 to be etched and the auxiliary portion 210 to be etched may be removed to form a first auxiliary portion 211 located in a preset pixel opening and a first light emitting portion 311 located on a side of the first auxiliary portion 211 away from the first electrode 11, as shown in FIG. Fig.10 shown.

[0123] It should be noted that, in the non-preset pixel opening, the first light-emitting material layer 310 is located on the auxiliary part to be etched 210; wherein, the first light-emitting material layer 310 may include a plurality of quantum dots 32 and a connecting structure 33 connected between the quantum dots 32, and thus the first light-emitting material layer 310 will undergo a cross-linking reaction during the film forming process; while the first material in the auxiliary part to be etched 210 is not cross-linked, and cross-linking between the first material and the first functional layer 70 is avoided, thereby reducing the adhesion between the auxiliary part to be etched 21 and the first functional layer 70, and avoiding the first light-emitting material layer 310 from remaining in the non-preset area during the patterning process, thereby improving the color gamut of the display panel and improving the display effect of the display panel.

[0124] In some embodiments, during the process of removing the light emitting portion 3101 to be etched and the auxiliary portion 210 to be etched, ultrasonic cleaning (USC) is performed in combination with development to further reduce the risk of residues of the first light emitting material layer 310 .

[0125] It can be understood that the subsequent preparation process of the second light-emitting portion 312 and the third light-emitting portion 313 can be carried out with reference to the preparation process of the first light-emitting portion 311, that is, an auxiliary material layer is first formed, and then a second light-emitting material layer or a third light-emitting material layer is formed on the auxiliary material layer. Then, when removing the second light-emitting material layer and the third light-emitting material layer in the non-preset pixel opening, the second light-emitting material layer and the third light-emitting material layer can be removed together with the auxiliary material layer below, and the second light-emitting material layer and the third light-emitting material layer can also be avoided from remaining in the non-preset pixel opening, so as to improve the color gamut in the display panel and improve the display effect of the display panel.

[0126] The above process can be referred to to sequentially form the second light-emitting portion 312 and the third light-emitting portion 313, and the second auxiliary portion 212 will be formed between the second light-emitting portion 312 and the first electrode 11, and the third auxiliary portion 213 will be formed between the third light-emitting portion 313 and the first electrode 11; wherein the first light-emitting portion 311, the second light-emitting portion 312 and the third light-emitting portion 313 constitute the light-emitting layer 30, and the first auxiliary portion 211, the second auxiliary portion 212 and the third auxiliary portion 213 constitute the auxiliary layer 20.

[0127] In step S30 , a second electrode layer 40 is formed on a side of the light emitting layer 30 away from the auxiliary layer 20 , and the second electrode layer 40 covers the pixel definition layer 60 and the plurality of light emitting portions 31 .

[0128] In the embodiment of the present application, the auxiliary portion 21 is additionally provided between the light-emitting portion 31 and the first electrode 11, and the first material in the auxiliary portion 21 is not provided with the cross-linking structure 331 relative to the light-emitting portion 31. Therefore, the first material in the auxiliary portion 21 is not cross-linked, and cross-linking between the first material and the film layer on the side of the auxiliary portion 21 away from the light-emitting portion 31 is avoided, thereby reducing the adhesion between the auxiliary portion 21 and the film layer on the side of the auxiliary portion 21 away from the light-emitting portion 31. Since the auxiliary portion 21 is located between the light-emitting portion 31 and the first electrode 11, when the light-emitting portion 31 is removed during patterning of the light-emitting layer 30, the same layer material of the light-emitting portion 31 and the same layer material of the auxiliary portion 21 below can be removed at the same time, thereby avoiding the phenomenon that the light-emitting layer 30 remains in a non-preset area during the patterning process, thereby improving the color gamut of the display panel and improving the display effect of the display panel.

[0129] In addition, an embodiment of the present application further provides a display device, which includes the display panel described in the above embodiment, or a display panel manufactured by the method for manufacturing the display panel described in the above embodiment.

[0130] It can be understood that, since the display device has the same display panel as that in the above embodiment, the display device has the same beneficial effects as the display panel, which will not be described in detail herein.

[0131] In the description of this application, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include one or more features. In the description of this application, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.

[0132] In the above embodiments, the description of each embodiment has its own emphasis. For parts that are not described in detail in a certain embodiment, reference can be made to the relevant descriptions of other embodiments.

[0133] The embodiments, implementation methods and related technical features of the present application can be combined and replaced with each other without conflict.

[0134] The above are only preferred embodiments of the present application and do not constitute any form of limitation to the present application. However, any simple modifications, equivalent changes and modifications made to the above embodiments based on the technical essence of the present application without departing from the content of the technical solution of the present application are still within the scope of the technical solution of the present application.

Claims

1. A display panel, characterized in that: include: A first electrode layer including a plurality of first electrodes; an auxiliary layer, disposed on one side of the first electrode layer, the auxiliary layer comprising a plurality of auxiliary parts disposed corresponding to the plurality of first electrodes, the auxiliary parts being disposed on one side of the corresponding first electrodes; a light-emitting layer, arranged on a side of the auxiliary layer away from the first electrode layer, the light-emitting layer comprising a plurality of light-emitting parts arranged corresponding to the plurality of auxiliary parts, the light-emitting parts being arranged on a side of the corresponding auxiliary parts away from the first electrode; A second electrode layer is disposed on a side of the light-emitting layer away from the auxiliary layer; Among them, the auxiliary part includes a first material, the light-emitting part includes a plurality of quantum dots and a connecting structure connected between the plurality of quantum dots, the connecting structure includes the first material replaced by a cross-linking structure, and the connecting structure is connected to the quantum dots through the cross-linking structure.

2. The display panel according to claim 1, characterized in that: The first material includes at least one of the following compounds:

3. The display panel according to claim 2, characterized in that: The connection structure includes at least one of the following structures: Wherein, * indicates the connection site.

4. The display panel according to any one of claims 1 to 3, characterized in that: The cross-linked structure replaces hydrogen atoms in the first material.

5. The display panel according to claim 1 or 2, characterized in that: The light-emitting layer includes a first light-emitting portion, a second light-emitting portion and a third light-emitting portion, the quantum dots in the first light-emitting portion, the quantum dots in the second light-emitting portion and the quantum dots in the third light-emitting portion are selected from any one of red quantum dots, green quantum dots and blue quantum dots, and the quantum dots in the first light-emitting portion, the quantum dots in the second light-emitting portion and the quantum dots in the third light-emitting portion are different from each other; The auxiliary layer includes a first auxiliary portion located between the first electrode and the first light-emitting portion, a second auxiliary portion located between the first electrode and the second light-emitting portion, and a third auxiliary portion located between the first electrode and the third light-emitting portion, and the first material in the first auxiliary portion, the first material in the second auxiliary portion, and the first material in the third auxiliary portion are selected from the same or different first materials.

6. The display panel according to claim 1, characterized in that: The quantum dot comprises a quantum dot body and a second material connected to the quantum dot body, wherein the second material is selected from a substituted or unsubstituted alkyl group having 1 to 4 carbon atoms.

7. The display panel according to claim 1 or 6, characterized in that: The auxiliary layer further includes a third material, and the third material is selected from substituted or unsubstituted alkyl groups having 1 to 4 carbon atoms.

8. The display panel according to claim 1, characterized in that: The display panel further includes a first functional layer, which is located at least between the auxiliary portion and the first electrode, and the adhesion between the auxiliary portion and the first functional layer is smaller than the adhesion between the auxiliary portion and the light-emitting portion.

9. A method for manufacturing a display panel, characterized in that: The manufacturing method of the display panel comprises the following steps: forming a first electrode layer, wherein a plurality of first electrodes are formed in the first electrode layer; An auxiliary layer and a light-emitting layer are formed on one side of the first electrode layer, the light-emitting layer is formed on a side of the auxiliary layer away from the first electrode layer, a plurality of auxiliary parts corresponding to the first electrodes are formed in the auxiliary layer, a plurality of light-emitting parts corresponding to the auxiliary parts are formed in the light-emitting layer, the auxiliary parts are arranged on one side of the corresponding first electrode, the light-emitting parts are arranged on one side of the corresponding auxiliary parts away from the first electrode, the auxiliary parts include a first material, the light-emitting parts include a plurality of quantum dots and a connection structure connected between the plurality of quantum dots, the connection structure includes the first material replaced by a cross-linking structure, and the connection structure is connected to the quantum dots through the cross-linking structure; and A second electrode layer is formed on a side of the light emitting layer away from the auxiliary layer.

10. The method for manufacturing a display panel according to claim 9, characterized in that: The step of forming an auxiliary layer and a light-emitting layer on one side of the first electrode layer comprises: The auxiliary material layer is formed by using the first material, and the first material is selected from at least one of the following compounds: forming a first light-emitting material layer on a side of the auxiliary material layer away from the first electrode layer; forming a first light-emitting portion and a light-emitting portion to be etched in the first light-emitting material layer, wherein the auxiliary material layer includes a first auxiliary portion located between the first light-emitting portion and the first electrode and an auxiliary portion to be etched located between the light-emitting portion to be etched and the first electrode; The light emitting portion to be etched and the auxiliary portion to be etched are removed.

11. The method for manufacturing a display panel according to claim 10, characterized in that: The step of forming a first light emitting material layer on a side of the auxiliary material layer away from the first electrode layer comprises: The first light-emitting material layer is formed by reacting the quantum dots and a cross-linking material, wherein the cross-linking material is selected from the first material substituted with a cross-linking group, and the cross-linking group is selected from at least one of an azide group, a diaziridine group, a carbon-carbon double bond, and a carbon-carbon triple bond.

12. The method for manufacturing a display panel according to claim 11, characterized in that: The cross-linking material includes at least one of the following compounds; 13. A display device, characterized in that: The display device comprises the display panel according to any one of claims 1 to 8, or a display panel manufactured by the method for manufacturing a display panel according to any one of claims 9 to 12.

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