Backlight device
By employing a stacked structure of solid-state light source and wavelength conversion layer in the LED backlight device, using narrow half-wavelength green and red phosphors, and combining flip-chip and fully encapsulated phosphor film, the problems of insufficient color gamut and uneven packaging in traditional LED backlight devices are solved, realizing a backlight device with high color gamut, good stability, and miniaturization.
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Utility models(China)
- Current Assignee / Owner
- FUJIAN TIANDIAN OPTOELECTRONICS CO LTD
- Filing Date
- 2025-05-09
- Publication Date
- 2026-04-21
AI Technical Summary
In existing LED backlight devices, traditional green phosphors have a wide half-width, which leads to a dispersed spectral energy distribution and insufficient color purity. Furthermore, red and green phosphors are prone to uneven dispersion during the encapsulation process, affecting the uniformity and stability of the backlight module.
Employing a stacked structure of solid-state light source and wavelength conversion layer, the green light emitting region uses a narrow half-width green light emitting material, while the red light wavelength conversion layer uses a narrow half-width red phosphor. Combined with a flip-chip structure and a fully encapsulated phosphor film, single-chip integration is achieved, reducing packaging size and improving light conversion efficiency.
It significantly improves the color gamut, enhances product stability and color consistency, simplifies the production process, reduces packaging size, and is suitable for miniaturized display devices.
Smart Images
Figure CN224152800U_ABST
Abstract
Description
Technical Field
[0001] This utility model relates to the field of optoelectronic display technology, and in particular to a backlight device. Background Technology
[0002] In the field of LCD backlighting, LED backlight chips have become the mainstream solution due to their advantages such as high efficiency, energy saving, and long lifespan. Currently, conventional LED backlight chips generally use a packaging method that combines a blue light controller with red and green phosphors: part of the blue light emitted by the blue light controller is emitted directly, while the other part excites the red and green phosphors to produce red and green light, which are then mixed to form white light to achieve the backlight function. This technology relies on the optical properties of the phosphors and the uniformity of the mixing; however, the following key issues need to be addressed in practical applications:
[0003] However, traditional green phosphors, such as the SiAlON series, while possessing good stability, typically have a wide half-width, generally greater than 55nm. This results in a dispersed spectral energy distribution and insufficient color purity, making it difficult to meet high color gamut display standards.
[0004] To overcome color gamut limitations, existing technologies attempt to use novel green fluorescent materials with narrower half-widths, such as quantum dots (QDs). While quantum dot green phosphors can significantly improve the color gamut, their core drawback lies in their poor thermal stability: during LED packaging, the high-temperature curing process and the controller heating up during long-term operation can easily lead to ligand detachment from the quantum dot surface and an increase in lattice defects, resulting in poor thermal stability.
[0005] In the encapsulation process, red and green phosphors need to be mixed with the encapsulating adhesive and then coated onto the controller surface. Due to differences in particle size, density, and surface polarity between the two phosphors, as well as uneven stirring force or changes in adhesive viscosity during mixing, inconsistent phosphor dispersion can occur, resulting in significant fluctuations in uniformity after mixing: forming localized agglomerates or concentration gradients. Furthermore, during the settling or coating process, the denser phosphor (such as green phosphor) settles quickly, while the red phosphor, due to its lower density and poor dispersibility, distributes unevenly; this difference in settling speed in the adhesive affects the uniformity of the backlight module.
[0006] There is an urgent need to develop a backlight device that can have a good color gamut, good stability, and reduce the packaging size. Utility Model Content
[0007] The purpose of this invention is to provide a backlight device to solve the problems existing in the prior art, which has a good color gamut, good stability, reduced packaging size, and is suitable for products with miniaturization requirements.
[0008] To achieve the above objectives, the present invention provides the following solution: a backlight device comprising a solid-state light source and a wavelength conversion layer stacked together;
[0009] The solid-state light source includes a solid-state light-emitting region, which includes a blue light-emitting region and a green light-emitting region; the peak wavelength range of the blue light emitted from the blue light-emitting region is 400-490nm; and the peak wavelength range of the green light emitted from the green light-emitting region is 500-560nm.
[0010] The wavelength conversion layer covers the outside of the solid-state light source, and a red light wavelength conversion layer is provided inside the wavelength conversion layer; at least a portion of the red light wavelength conversion layer is located within the range of the emitted light from the blue light emitting region and the green light emitting region, and the peak emission wavelength range of the red light wavelength conversion layer is 600-680nm.
[0011] As one embodiment, the red light wavelength conversion layer includes a red light conversion material, which includes nitride phosphor, KSF phosphor, quantum dot material or SLA phosphor.
[0012] As one implementation, the blue light emitting region and the green light emitting region are stacked.
[0013] As one embodiment, the solid-state light source has an inverted structure, and the wavelength conversion layer is attached to the top and side surfaces of the solid-state light source.
[0014] As one embodiment, it also includes a bracket, in which a trapezoidal placement groove is provided, the solid-state light source is disposed at the bottom of the trapezoidal placement groove, and the wavelength conversion layer is embedded in the trapezoidal placement groove.
[0015] As one embodiment, it also includes a substrate, with the solid-state light source located on an end face of the substrate.
[0016] In one embodiment, the wavelength conversion layer is a fluorescent sheet, which is bonded to the solid-state light source.
[0017] As one embodiment, the light conversion material contained in the fluorescent sheet is SLA phosphor or nitride phosphor.
[0018] As one embodiment, the fluorescent sheet is a ceramic fluorescent sheet or a glass fluorescent sheet.
[0019] In one embodiment, the substrate includes an unbonded region protruding from the solid-state light source, and the end face of the unbonded region, the sidewall of the solid-state light source, and the sidewall of the phosphor sheet are all covered with a sealant layer.
[0020] The present invention achieves the following technical advantages over the prior art:
[0021] 1. Significantly improves color gamut: Green light is emitted from the green light-emitting area to replace green phosphor. The half-width of the emitted green light is smaller than that of conventional phosphor, preferably less than 40nm, which greatly improves the color gamut of the product.
[0022] Enhanced reliability: The wavelength conversion layer contains only red phosphor and no green phosphor, which avoids abnormalities that affect the concentration of target points, such as uneven mixing of red and green phosphors or different sedimentation rates of red and green phosphors. The final product has concentrated color points, high color consistency, and high yield. Furthermore, the green light is emitted directly by the LED chip itself, without the use of QD green phosphor with poor aging performance. Under the same color gamut, the product with green light emitted by the chip has better aging stability.
[0023] Structural optimization: Compared with the traditional dual-substrate solution, this utility model integrates the blue light emitting area and the green light emitting area on the same substrate to form a whole chip, forming a single-chip integrated structure. This can simplify the die bonding process, improve production efficiency, reduce the number of packaging components, and reduce the packaging volume, making it suitable for products with miniaturization requirements.
[0024] The other technical solutions of this utility model have achieved the following technical effects compared with the prior art:
[0025] 2. The vertical projection of the blue light emitting surface and the green light emitting surface is completely overlapped with the red light wavelength conversion layer to ensure that both blue and green light are effectively utilized; the stacked solid light source is directly attached to the wavelength conversion layer to avoid interface reflection loss and improve light conversion efficiency.
[0026] 3. The wavelength conversion layer includes a red light conversion material, which is preferably selected from the following materials:
[0027] KSF(K2SiF6:Mn4+) phosphor has a red light half-width ≤30nm;
[0028] Quantum dot (QD) materials, with a red light half-width ≤35nm;
[0029] SLA (Sr[LiAl3N4]:Eu2+) phosphor has a red light emission half-width ≤60nm;
[0030] The aforementioned materials are characterized by a small half-width of the emitted red light. Compared to conventional nitride red powder (half-width 80-120nm), these materials can effectively improve the overall color gamut of the LED and significantly reduce the half-width. The smaller the half-width of the red powder, the higher the overall color gamut of the LED. These powders can significantly improve the color gamut of the final product.
[0031] 4. The solid-state light source adopts a flip-chip structure, with its blue and green light emitting areas integrated on the same chip substrate; enabling extreme miniaturization: unlike the traditional dual-chip (blue + green light independent chips) separate packaging scheme, this utility model integrates the blue / green light emitting areas on a single chip, combined with a flip-chip structure and a fully encapsulated phosphor film, effectively reducing the package size and meeting the compactness requirements of micro-display devices; efficient light coupling: the phosphor film directly covers the top and sides of the light-emitting unit, eliminating total internal reflection loss caused by air gaps, and the excitation light (blue / green light) is directly incident on the red phosphor conversion material through a short path, improving light conversion efficiency; convenient integration and control: the standardized structure of the CSP facilitates high-density integration with driving circuits, optical components, etc., that is, the CSP packaging is more convenient for subsequent integration and control.
[0032] 5. The support includes a trapezoidal mounting slot. The solid-state light source is placed at the bottom of the slot, and a wavelength conversion layer is embedded within it. The wavelength conversion layer is a fluorescent adhesive made of KSF phosphor and silicone in a preset ratio, covering the top surface of the solid-state light source and fully adhering to the sidewalls of the trapezoidal mounting slot. In other words, the wavelength conversion layer completely covers the top surface of the solid-state light source and the sidewalls of the trapezoidal mounting slot. The sidewalls of the trapezoidal mounting slot reflect light, improving red light excitation efficiency. Furthermore, the support, together with the substrate, assists in heat dissipation of the solid-state light source, improving overall heat dissipation capacity and increasing thermal stability.
[0033] 6. A solid-state light source is die-bonded onto a ceramic substrate, and the wavelength conversion layer is a phosphor sheet made of SLA phosphor. The phosphor sheet covers the top surface of the solid-state light source and is parallel to the ceramic substrate, with the vertical projections of the blue and green light emitting areas falling entirely on the phosphor sheet. The phosphor sheet can be a glass phosphor sheet or a ceramic phosphor sheet; the ceramic phosphor sheet is made by sintering pure phosphor powder into a bulk ceramic, while the glass phosphor sheet is made by mixing phosphor and glass and then curing it into a bulk; both are ultimately formed into sheets by slicing. This encapsulation has good high-temperature resistance and is suitable for high-power applications. The phosphor is preferably SLA phosphor or red phosphor made of nitride material. Attached Figure Description
[0034] To more clearly illustrate the technical solutions in the embodiments of this utility model or the prior art, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this utility model. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.
[0035] Figure 1 This is a schematic diagram of the solid-state light source structure of this utility model;
[0036] Figure 2This is a schematic diagram of the solid-state light source of this utility model when it is an inverted structure;
[0037] Figure 3 This is a schematic diagram of the bracket assembly structure of this utility model;
[0038] Figure 4 This is a schematic diagram of the substrate assembly structure of this utility model.
[0039] Among them, 1. Solid-state light source; 2. Wavelength conversion layer; 3. Solid-state light source emitting area; 4. Blue light emitting area; 5. Green light emitting area; 6. Chip; 7. Phosphor film; 8. Support; 9. Die-attach adhesive layer; 10. Bonding wire; 11. Substrate; 12. Phosphor sheet; 13. Sealant layer. Detailed Implementation
[0040] The technical solutions of the present utility model will be clearly and completely described below with reference to the accompanying drawings of the embodiments. Obviously, the described embodiments are only some embodiments of the present utility model, and not all embodiments. Based on the embodiments of the present utility model, all other embodiments obtained by those of ordinary skill in the art without creative effort are within the protection scope of the present utility model.
[0041] To make the above-mentioned objectives, features and advantages of this utility model more apparent and understandable, the utility model will be further described in detail below with reference to the accompanying drawings and specific embodiments.
[0042] This embodiment provides a backlight device; please refer to [reference needed]. Figure 1-4 As shown, the backlight device is also an LED backlight structure, including a solid-state light source 1 and a wavelength conversion layer 2. The solid-state light source 1 and the wavelength conversion layer 2 are stacked, with the wavelength conversion layer 2 covering the light-emitting side of the solid-state light source 1. The solid-state light source 1 includes a substrate, on which a solid-state light-emitting region 3 is disposed. The solid-state light-emitting region 3 includes a blue light-emitting region 4 and a green light-emitting region 5. The blue light-emitting region 4 emits blue light (color 1) with a peak wavelength of 400-490nm and a half-width of <40nm. Specifically, the blue light-emitting region 4 includes a blue PN junction, and its emission surface is defined as the blue light emission surface. The emitted blue light from the blue light-emitting region 4 can be emitted outward through the blue light emission surface.
[0043] The green light emitting region 5 emits green light (color II) with a peak wavelength of 500-560nm and a half-width of <40nm. Specifically, the green light emitting region 5 includes a green PN junction, and its emission surface is defined as the green light emission surface. The emitted green light from the green light emitting region 5 can be emitted outward through the green light emission surface. The wavelength conversion layer 2 covers the outside of the solid-state light source 1. The wavelength conversion layer 2 has a uniformly distributed red light conversion material region, forming a red light wavelength conversion layer. At least a portion of the red light wavelength conversion layer is simultaneously located within the emission light coverage range of both the blue light emitting region 4 and the green light emitting region 5. Preferably, the vertical projections of the blue light emission surface and the green light emission surface onto the wavelength conversion layer 2 overlap with the red light wavelength conversion layer, and the peak wavelength range of the emitted light from the red light wavelength conversion layer is 600-680nm.
[0044] Working principle: After the blue PN junction is energized, it emits blue light with a peak wavelength range of 400-490nm (color 1), which is directionally output through the blue light emitting surface; after the green PN junction is energized, it emits green light with a peak wavelength range of 500-560nm (color 2), which is directionally output through the green light emitting surface. The red wavelength conversion layer contains red phosphor material, preferably a narrow half-width red phosphor, and the red powder of the red phosphor can be KSF(K2SiF6:Mn) 4+ Phosphor, QD quantum dots, or SLA (Sr[LiAl3N4]:Eu) 2+ Phosphors with a peak wavelength range of 600-660nm;
[0045] The red wavelength conversion layer is located within the emission range of blue light (color 1) and green light (color 2). Blue light (color 1) and / or green light (color 2) can excite the red phosphor in the red wavelength conversion layer, thereby emitting color 3. Color 3 can be red light. The final emission is composed of color 3 and the remaining unabsorbed blue light (color 1) and green light (color 2).
[0046] This utility model has the following advantages:
[0047] 1. Significantly improves color gamut: Green light in the 500-560nm range emitted by the green PN junction is used to replace green phosphor. The half-width of green light is smaller than that of conventional phosphor, preferably less than 40nm, which greatly improves the color gamut of the product.
[0048] II. Enhanced Reliability: The wavelength conversion layer 2 contains only red phosphor and no green phosphor, which avoids abnormalities that affect the concentration of target points, such as uneven mixing of red and green phosphors or different settling speeds of red and green phosphors. The final product has concentrated color points, high color consistency, and high yield. Furthermore, the green light is emitted directly by the LED chip itself, without the use of QD green phosphor with poor aging performance. Under the same color gamut, the product with green light emitted by the chip has better aging stability.
[0049] III. Structural Optimization: Compared with the traditional dual-substrate solution, this utility model integrates the blue light emitting area and the green light emitting area on the same substrate to form a whole chip, forming a single-chip integrated structure. This can simplify the die bonding process, improve production efficiency, reduce the number of packaging components, and reduce the packaging volume, making it suitable for products with miniaturization requirements.
[0050] Fourth, the vertical projection of the blue light emitting surface and the green light emitting surface is completely overlapped with the red light wavelength conversion layer to ensure that both blue and green light are effectively utilized; the stacked solid light source 1 is directly attached to the wavelength conversion layer 2 to avoid interface reflection loss and improve light conversion efficiency.
[0051] In one embodiment, the wavelength conversion layer 2 comprises a uniformly distributed red light conversion material, which may be selected from nitride phosphors, KSF phosphors, quantum dot materials, or SLA phosphors; preferably:
[0052] KSF(K2SiF6:Mn 4+ Phosphor with a red light half-width ≤30nm;
[0053] Quantum dot (QD) materials, with a red light half-width ≤35nm;
[0054] SLA(Sr[LiAl3N4]:Eu 2+ Phosphor with a red light emission half-width ≤ 60nm;
[0055] The aforementioned materials are characterized by a small half-width of the emitted red light. Compared to conventional nitride red powder (half-width 80-120nm), these materials can effectively improve the overall color gamut of the LED and significantly reduce the half-width. The smaller the half-width of the red powder, the higher the overall color gamut of the LED. These powders can significantly improve the color gamut of the final product.
[0056] Red light conversion materials can be prepared by uniformly mixing a phosphor of a specific material with a dispersant, such as silicone, epoxy resin, or glass, to obtain a composite red light wavelength conversion layer. This red light wavelength conversion layer has an existing structure, resulting in wavelength conversion layer 2. Alternatively, wavelength conversion layer 2 can be prepared using red phosphor alone. When quantum dots (QDs) are used as red light conversion materials, their luminescence mechanism is based on the quantum confinement effect: blue or green light excites quantum dot nanocrystals, causing them to emit red light of a specific wavelength. The regions in the wavelength conversion layer where quantum dots are uniformly distributed constitute the red light wavelength conversion layer (or red light conversion layer), and the perpendicular projections of the blue light emitting surface and the green light emitting surface overlap with this red light wavelength conversion layer to ensure that the excitation light is effectively coupled to the red light conversion material.
[0057] In this invention, the blue light-emitting region 4 and the green light-emitting region 5 are stacked, with the green light emitting surface parallel to the blue light emitting surface. Furthermore, the overlap of the projected areas of the green and blue light emitting surfaces in the vertical direction (Z-axis) is greater than 95%, or they completely overlap. The main emitting surface of the solid-state light source 1 is preferably located above the blue light emitting surface. This stacked structure effectively reduces the packaged projected area of the blue and green light-emitting regions, meeting the requirements of miniaturized devices. The vertical projection overlap design also results in a high overlap rate of the excitation light spots, avoiding uneven color mixing at the edges. The area matching of the green and blue light emitting surfaces optimizes the red, green, and blue light flux ratio, improving the color gamut. It also reduces the number of die bonding processes, lowers production costs, and increases production yield.
[0058] In one embodiment, the solid-state light source 1 adopts a flip-chip structure, where its blue light-emitting region 4 and green light-emitting region 5 are integrated on the same chip substrate. The electrode face of the light-emitting unit is soldered downwards to the substrate circuit layer using flip-chip bonding technology, achieving direct electrical connection between the chip 6 and the substrate. The peak wavelength of the blue light-emitting region 4 is 470nm, and the peak wavelength of the green light-emitting region 5 is 525nm. For the flip-chip solid-state light source 1, the wavelength conversion layer 2 adopts a CSP (chip-scale packaging) structure: KSF phosphor (potassium manganese fluorosilicate phosphor, K2SiF6:Mn) is used. 4+ A fluorescent adhesive film 7 is formed by mixing phosphor and silicone in a 3:1 ratio. This film is then molded or coated to tightly adhere to the top and sides of the solid-state light source 1, forming a fully encapsulated structure. The size of this encapsulation is close to that of the chip itself, making it a typical chip-scale package (CSP). Its advantages include:
[0059] Extreme miniaturization: Unlike the traditional dual-chip (blue light + green light independent chip) separate packaging solution, this utility model integrates the blue light / green light emitting area on a single chip, combined with a flip-chip structure and a fully encapsulated fluorescent film 7, to effectively reduce the packaging volume and meet the compactness requirements of micro display devices;
[0060] High-efficiency light coupling: The fluorescent film 7 directly covers the top and sides of the light-emitting unit, eliminating total internal reflection loss caused by air gaps, and the excitation light (blue light / green light) is directly incident on the red fluorescent conversion material through a short path, improving the light conversion efficiency;
[0061] Convenience of integrated control: The standardized structure of CSP facilitates high-density integration with subsequent drive circuits, optical components, etc., meaning that CSP packaging makes subsequent integrated control easier.
[0062] In one embodiment, the system further includes a support 8, preferably an EMC support, also known as an epoxy molding compound support. The solid-state light source 1 is directly mounted on the support 8, with its light-emitting surface located on its top surface. The positive and negative electrodes of the solid-state light source 1 are electrically connected to the positive and negative electrodes of the support 8. Preferably, the substrate of the solid-state light source 1 is directly and fixedly connected to the support 8. The support 8 includes a trapezoidal placement groove, with the solid-state light source 1 disposed at the bottom of the groove. The solid-state light source 1 is die-bonded to the bottom of the groove, and a die-bonding adhesive layer 9 is formed between the solid-state light source 1 and the bottom of the groove. Preferably, the substrate of the solid-state light source 1 is directly and fixedly connected to the bottom of the trapezoidal placement groove; the wavelength conversion layer 2 is embedded in the trapezoidal placement groove. Preferably, the cross-section of the trapezoidal placement groove is an isosceles trapezoid, and the sidewalls and bottom surface of the trapezoidal placement groove form a predetermined angle. At this time, the peak wavelength of the light emitted from the blue light-emitting region 4 is 450nm; the peak wavelength of the light emitted from the green light-emitting region 5 is 530nm. Preferably, the wavelength conversion layer 2 is a fluorescent adhesive made by mixing KSF phosphor and silicone in a 1:2.5 ratio. The fluorescent adhesive fills the trapezoidal placement groove and covers the top surface of the solid-state light source 1. The fluorescent adhesive also fully adheres to the sidewalls of the trapezoidal placement groove. That is, the wavelength conversion layer 2 can completely cover the top surface of the solid-state light source 1 and the sidewalls of the trapezoidal placement groove. The sidewalls of the trapezoidal placement groove can reflect light, improving the red light excitation efficiency. Furthermore, the support 8 can work with the substrate to assist in the heat dissipation of the solid-state light source 1, improving the overall heat dissipation capacity and increasing thermal stability.
[0063] In this embodiment, a bonding wire 10 is disposed in a trapezoidal mounting groove. The bonding wire 10 includes a first solder joint and a second solder joint. The first solder joint of the bonding wire 10 is connected to the electrode of the solid-state light source 1; the second solder joint of the bonding wire 10 is connected to the electrode of the support 8, thereby electrically connecting the solid-state light source 1 and the support 8 through the bonding wire 10. Preferably, the bonding wire 10 includes an arched body with an arched structure, and the arched body is located in the wavelength conversion layer 2. The arched body of the bonding wire 10 improves the shear resistance of the bonding wire 10 itself, improves the reliability of the bonding wire 10, prevents wire breakage, and increases the overall stability. Preferably, two bonding wires 10 are disposed and symmetrically distributed on both sides of the solid-state light source 1.
[0064] In one embodiment, the system further includes a substrate 11, which is a ceramic substrate. Preferably, the ceramic substrate has a rectangular plate structure. A solid-state light source 1 is die-bonded onto the ceramic substrate. Preferably, the substrate of the solid-state light source 1 is directly die-bonded to the ceramic substrate. The solid-state light source 1 is disposed on the end face of the ceramic substrate, and its positive and negative electrodes are electrically connected to the positive and negative electrodes of the circuit layer of the ceramic substrate. At this time, the peak wavelength of the light emitted from the blue light-emitting region 4 is 460 nm; the peak wavelength of the light emitted from the green light-emitting region 5 is 530 nm; and the wavelength conversion layer 2 is a phosphor sheet 12, which is attached to the light-emitting surface of the solid-state light source 1. The phosphor sheet 12 can be a glass phosphor sheet or a ceramic phosphor sheet. The ceramic phosphor sheet is sintered from pure phosphor powder into a bulk ceramic, while the glass phosphor sheet is formed by mixing phosphor and glass and then curing it into a bulk. Finally, both are formed into sheets by slicing. The light conversion material contained in the phosphor sheet 12 is SLA phosphor or nitride phosphor; the chemical formula of the SLA phosphor is Sr[LiAl3N4]:Eu. 2+ The ceramic phosphor can also be made of nitride phosphor, with the chemical formula (Sr,Ca)AlSiN3:Eu. 2+ Or (Ca,Sr,Ba,Mg)2Si5N8:Eu 2+ A phosphor sheet 12 covers the top surface of the solid-state light source 1. The phosphor sheet 12 can also be a rectangular plate structure. The top surface of the solid-state light source 1 serves as the light emission surface, from which blue and green light are emitted. The phosphor sheet 12 is parallel to the ceramic substrate, and the vertical projections of the blue light emitting region 4 and the green light emitting region 5 fall entirely on the phosphor sheet 12.
[0065] In this embodiment, the ceramic substrate also includes an unbonded region protruding from the solid-state light source 1. A sealant layer 13 is applied to both the end face of the unbonded region and the sidewall of the solid-state light source 1. Preferably, the sidewall of the ceramic phosphor is also covered with a sealant layer 13. The sealant layer 13 is made of white glue. In this case, the sealant layer 13 is a white glue sealing layer. Preferably, the unbonded regions are located on both sides of the solid-state light source 1 and are symmetrically distributed. The sealant layer 13 is also symmetrically attached to both sides of the solid-state light source 1 and the ceramic phosphor. The sidewall of the white glue sealing layer has high reflectivity, which, combined with the ceramic phosphor, provides good light extraction efficiency.
[0066] It should be noted that, for those skilled in the art, it is obvious that this utility model is not limited to the details of the above exemplary embodiments, and that it can be implemented in other specific forms without departing from the spirit or essential characteristics of this utility model. Therefore, the embodiments should be considered exemplary and non-limiting in all respects, and the scope of this utility model is defined by the appended claims rather than the foregoing description. Thus, it is intended that all variations falling within the meaning and scope of equivalents of the claims be included within this utility model. No reference numerals in the claims should be construed as limiting the scope of the claims.
[0067] This utility model uses specific examples to illustrate its principles and implementation methods. The above description of the embodiments is only for the purpose of helping to understand the method and core idea of this utility model. At the same time, for those skilled in the art, there will be changes in the specific implementation methods and application scope based on the idea of this utility model. In summary, the content of this specification should not be construed as a limitation of this utility model.
Claims
1. A backlight device, characterized by comprising: It includes a solid-state light source (1) and a wavelength conversion layer (2) stacked together; The solid-state light source (1) includes a solid-state light-emitting region (3), which includes a blue light-emitting region (4) and a green light-emitting region (5); the peak wavelength range of the blue light emitted by the blue light-emitting region (4) is 400-490nm; the peak wavelength range of the green light emitted by the green light-emitting region (5) is 500-560nm. The wavelength conversion layer (2) covers the outside of the solid light source (1), and a red light wavelength conversion layer is provided inside the wavelength conversion layer (2); at least a part of the red light wavelength conversion layer is located within the range of the emitted light of the blue light emitting region (4) and the green light emitting region (5), and the peak wavelength range of the red light wavelength conversion layer is 600-680nm.
2. The backlight device according to claim 1, wherein The red light wavelength conversion layer includes a red light conversion material, which may include nitride phosphor, KSF phosphor, quantum dot material, or SLA phosphor.
3. The backlight device according to claim 1, wherein The blue light emitting area (4) and the green light emitting area (5) are stacked.
4. The backlight of claim 1, wherein The solid-state light source (1) has an inverted structure, and the wavelength conversion layer (2) is attached to the top and side surfaces of the solid-state light source (1).
5. The backlight of claim 1, wherein It also includes a bracket (8), in which a trapezoidal placement groove is provided, the solid light source (1) is disposed at the bottom of the trapezoidal placement groove, and the wavelength conversion layer (2) is embedded in the trapezoidal placement groove.
6. The backlight of claim 1, wherein It also includes a substrate (11), with the solid-state light source (1) located on the end face of the substrate (11).
7. The backlighting device of claim 6, wherein, The wavelength conversion layer (2) is a fluorescent sheet (12), which is bonded to the solid-state light source (1).
8. The backlighting device of claim 7, wherein, The light conversion material contained in the fluorescent sheet (12) is SLA phosphor or nitride phosphor.
9. The backlight of claim 7, wherein, The fluorescent sheet (12) is a ceramic fluorescent sheet or a glass fluorescent sheet.
10. The backlight of claim 7, wherein The substrate (11) includes an unbonded region protruding from the solid-state light source (1), and the end face of the unbonded region, the sidewall of the solid-state light source (1) and the sidewall of the phosphor sheet (12) are all covered with a sealant layer (13).