Semiconductor refrigerator

Abstract

The embodiment of the invention discloses a semiconductor cooler. Comprising a substrate; a groove and a through hole are formed in the substrate, and the groove surrounds the through hole; the groove comprises a plurality of first concave parts, a plurality of second concave parts, a plurality of first connecting parts and a plurality of second connecting parts; the first conductive type semiconductors are in one-to-one correspondence with the first recessed portions, and the second conductive type semiconductors are in one-to-one correspondence with the second recessed portions. The first metal electrodes are positioned on the first connecting parts in one-to-one correspondence; the second metal electrodes are positioned on the second connecting parts in one-to-one correspondence; a first external connection electrode located in one of the plurality of first recessed portions and connected to the first conductive type semiconductor; the second external connection electrode is located in one of the plurality of second recessed portions and is connected with the second conductive type semiconductor. According to the semiconductor refrigerator, the groove surrounding the through hole is formed in the substrate, the groove is divided into different concave parts and connecting parts, different types of semiconductors are arranged at intervals and connected, the formed semiconductor refrigerator is matched with a pipeline where fluid is located, and the temperature control precision is improved.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a semiconductor refrigerator. Background Art

[0002] Total Organic Carbon (TOC) analyzer is an instrument used to measure the total organic carbon in water or solution. It converts the carbon element in the sample into carbon dioxide through high-temperature combustion or ultraviolet catalytic oxidation, and measures the carbon concentration through infrared or conductivity methods. TOC analyzers have been widely used in water quality testing, pharmaceutical industry, semiconductors and other fields. Figure 1 This is a schematic diagram of the working principle of the total organic carbon analyzer in the related technology. Figure 1 As shown, this type of TOC analyzer is based on ultraviolet catalytic oxidation and conductivity measurement, and can be divided into a liquid inlet module 1, an oxidation module 2 and a measurement module 3. The liquid inlet module 1 mixes the sample solution with an acid and an oxidant, and mixes the sample solution by adding an acid (6 mol / L phosphoric acid) 5 and an oxidant (15% specific gravity ammonium persulfate) 6. When the inorganic carbon concentration is high, it can be removed by an inorganic carbon remover 4. The mixed solution is divided into two parts: total organic carbon (TC) and inorganic carbon (IC) 7. The oxidation module 2 performs ultraviolet oxidation of total organic carbon 8 through an ultraviolet lamp. The IC part and the TC part enter their respective conductivity cells to hydrolyze carbon dioxide, and perform membrane filtration of carbon dioxide 9, and then discharge wastewater 10. The measurement module 3 performs conductivity measurement 11 through a conductivity sensor, measures the conductivity in the TC and IC conductivity cells, and converts the conductivity into concentration. Finally, the concentrations of the TC and IC parts are subtracted to obtain the final organic carbon concentration, and then the carbon dioxide is removed by the ion exchange resin circuit 12.

[0003] The influence of temperature on TOC analyzer lies in the influence on conductivity. In addition to affecting the ionization and solubility of carbon dioxide, the temperature increase will also affect the viscosity of the solution in the conductivity cell and the mobility of ions in the solution, thereby affecting the measurement results of conductivity. At present, the commonly used conductivity measurement method is to regard the conductivity at 25°C as the standard conductivity. For the actual sample, temperature compensation measures are used to convert the measured conductivity into the conductivity at 25°C, and then the conductivity is converted into the actual concentration. However, since the current temperature compensation formula uses an empirical formula or an experimental formula, experimental measurement is required for parameter calibration, and there is a lack of theoretical formulas based on the mechanism, which will bring certain errors, especially when the actual temperature of the sample is greatly different from the standard temperature, it has a greater impact on low concentration measurements. In addition, the temperature control in the TOC analyzer is mainly for fluids, and the fluids are stored or circulated in pipelines. In the prior art, the temperature control equipment for the fluid in the TOC analyzer cannot match the pipeline where the fluid is located, resulting in low temperature control accuracy, thereby reducing the measurement accuracy of the TOC analyzer. Summary of the invention

[0004] The invention provides a semiconductor refrigerator to solve the problem that the temperature control device of the fluid in the TOC analyzer cannot match the pipeline where the fluid is located, resulting in low temperature control accuracy.

[0005] According to one aspect of the present invention, there is provided a semiconductor refrigerator, the semiconductor refrigerator comprising:

[0006] A substrate; a groove and a through hole are provided on the substrate, and the groove surrounds the through hole;

[0007] The groove includes a plurality of first recessed portions, a plurality of second recessed portions, a plurality of first connecting portions, and a plurality of second connecting portions; the first recessed portions and the second recessed portions are spaced apart in a circumferential direction around the through hole; the first connecting portion connects one end of the first recessed portion and the second recessed portion away from the through hole, and the second connecting portion connects one end of the first recessed portion and the second recessed portion close to the through hole;

[0008] A plurality of first conductive type semiconductors and a plurality of second conductive type semiconductors; the first conductive type semiconductors are located in the first recessed portions in a one-to-one correspondence, and the second conductive type semiconductors are located in the second recessed portions in a one-to-one correspondence;

[0009] A plurality of first metal electrodes and a plurality of second metal electrodes, wherein the first metal electrodes are located in a one-to-one correspondence at the first connection portion and are used to connect the first conductive type semiconductor and the second conductive type semiconductor at one end away from the through hole; and the second metal electrodes are located in a one-to-one correspondence at the second connection portion and are used to connect the first conductive type semiconductor and the second conductive type semiconductor at one end close to the through hole;

[0010] A first external connection electrode and a second external connection electrode, the first external connection electrode is located in one of the multiple first recessed parts and is used to connect to the first conductive type semiconductor; the second external connection electrode is located in one of the multiple second recessed parts and is used to connect to the second conductive type semiconductor.

[0011] Optionally, the shape of the substrate includes a cylindrical shape; and / or, the substrate includes a flexible resin substrate.

[0012] Optionally, the shapes of the first recessed portion and the second recessed portion include a rectangle;

[0013] And / or, the shape of the first connection portion includes an arc shape.

[0014] Optionally, the first metal electrode and the second metal electrode include liquid metal electrodes.

[0015] Optionally, the substrates of the first conductivity type semiconductor and the second conductivity type semiconductor include a bismuth telluride substrate.

[0016] Optionally, the semiconductor refrigerator further includes: a filling layer; the filling layer is arranged between the first recessed portion and the first conductive type semiconductor; and the filling layer is arranged between the second recessed portion and the second conductive type semiconductor.

[0017] Optionally, the semiconductor refrigerator further includes: a temperature control module; the temperature control module is connected to the first external connection electrode and the second external connection electrode;

[0018] The temperature control module is used to adjust the duty cycle of the input semiconductor cooler to achieve temperature control.

[0019] Optionally, the temperature control module includes a neural network unit;

[0020] The neural network unit is used to convert the difference between the actual temperature and the target temperature of the semiconductor refrigerator into a proportional parameter, an integral parameter and a differential parameter.

[0021] Optionally, the temperature control module further includes a control unit; the control unit is connected to the neural network unit;

[0022] The control unit is used to convert the proportional parameter, the integral parameter and the differential parameter into a duty cycle.

[0023] Optionally, the temperature control module further includes a duty cycle control unit; the duty cycle control unit is connected to the control unit;

[0024] The duty cycle control unit is used to control the duty cycle of the input semiconductor cooler through the pulse width modulation technology.

[0025] The technical solution of the embodiment of the present invention is to set a groove surrounding the through hole on the substrate, and divide the groove into multiple first recessed parts, multiple second recessed parts, multiple first connecting parts and multiple second connecting parts, the first recessed parts and the second recessed parts are spaced apart in the circumferential direction around the through hole, place the first conductive type semiconductor in the first recessed part, place the second conductive type semiconductor in the second recessed part, place the first metal electrode in the first connecting part to connect the first conductive type semiconductor and the second conductive type semiconductor at one end away from the through hole; place the second metal electrode in the second connecting part to connect the first conductive type semiconductor and the second conductive type semiconductor at one end close to the through hole, one end of one of the first conductive type semiconductor and the second conductive type semiconductor can be connected to the positive and negative poles of an external power supply through the first external connecting electrode and the second external connecting electrode, the formed semiconductor refrigerator can be set in the TOC analyzer to adjust the temperature of the fluid, and the formed semiconductor refrigerator matches the pipeline where the fluid is located, thereby improving the temperature control accuracy.

[0026] It should be understood that the contents described in this section are not intended to identify the key or important features of the embodiments of the present invention, nor are they intended to limit the scope of the present invention. Other features of the present invention will become easily understood through the following description. BRIEF DESCRIPTION OF THE DRAWINGS

[0027] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0028] Figure 1 It is a schematic diagram of the working principle of a total organic carbon analyzer in the related technology;

[0029] Figure 2 is a schematic diagram of a top view of a semiconductor refrigerator provided according to an embodiment of the present invention;

[0030] Figure 3 is a schematic diagram of a top view of another semiconductor refrigerator provided according to an embodiment of the present invention;

[0031] Figure 4 is a schematic diagram of the overall structure of another semiconductor refrigerator provided according to an embodiment of the present invention;

[0032] Figure 5 is a structural schematic diagram of another semiconductor refrigerator provided according to an embodiment of the present invention;

[0033] Figure 6 is a schematic diagram of the working principle of a semiconductor refrigerator provided according to an embodiment of the present invention;

[0034] Figure 7 It is a schematic diagram of the working principle of a neural network unit provided according to an embodiment of the present invention. DETAILED DESCRIPTION

[0035] In order to enable those skilled in the art to better understand the scheme of the present invention, the technical scheme in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

[0036] It should be noted that the terms "first", "second", etc. in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units that are clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0037] Figure 2 1 is a schematic diagram of a top view of a semiconductor refrigerator provided according to an embodiment of the present invention. Figure 2As shown, the semiconductor refrigerator comprises: a substrate 10; a groove 101 and a through hole 102 are arranged on the substrate 10, and the groove 101 surrounds the through hole 102; the groove 101 comprises a plurality of first recessed parts 1011, a plurality of second recessed parts 1012, a plurality of first connecting parts 1013 and a plurality of second connecting parts 1014; the first recessed parts 1011 and the second recessed parts 1012 are arranged at intervals in the circumferential direction around the through hole 102; the first connecting part 1013 connects the first recessed part 1011 and the second recessed part 1012 at one end away from the through hole 102, and the second connecting part 1014 connects the first recessed part 1011 and the second recessed part 1012 at one end close to the through hole 102; a plurality of first conductive type semiconductors 20 and a plurality of second conductive type semiconductors 30; the first conductive type semiconductors 20 are located in the first recessed part 1011, the second recessed part 1012 in a one-to-one correspondence. The conductive type semiconductors 30 are located one by one in the second recessed portion 1012; a plurality of first metal electrodes 40 and a plurality of second metal electrodes 50, the first metal electrodes 40 are located one by one in the first connecting portion 1013, and are used to connect the first conductive type semiconductor 20 and the second conductive type semiconductor 30 at one end away from the through hole 102; the second metal electrodes 50 are located one by one in the second connecting portion 1014, and are used to connect the first conductive type semiconductor 20 and the second conductive type semiconductor 30 at one end close to the through hole 102; a first external connecting electrode 60 and a second external connecting electrode 70, the first external connecting electrode 60 is located in one of the plurality of first recessed portions 1011, and is used to connect the first conductive type semiconductor 20; the second external connecting electrode 70 is located in one of the plurality of second recessed portions 1012, and is used to connect the second conductive type semiconductor 30.

[0038] In an embodiment of the present invention, a thermoelectric semiconductor refrigerator is made by using the Peltier effect, and is applied to a TOC analyzer to control the temperature of a fluid. The Peltier effect refers to a thermoelectric effect in which heat absorption or heat release occurs at the joint of two conductors when an electric current passes through a loop composed of two different conductors. The semiconductor refrigerator of the embodiment of the present invention is designed for a pipeline, so a through hole 102 is provided on the substrate 10, and the formed semiconductor refrigerator can be surrounded by the pipeline to control the temperature of the liquid in the pipeline. In an embodiment of the present invention, the first conductive type semiconductor 20 can be a P-type semiconductor, and the first conductive type semiconductor 20 can also be an N-type semiconductor. When the first conductive type semiconductor 20 is a P-type semiconductor, the second conductive type semiconductor 30 is an N-type semiconductor; when the first conductive type semiconductor 20 is an N-type semiconductor, the second conductive type semiconductor 30 is a P-type semiconductor. The embodiment of the present invention is described by taking the first conductive type semiconductor 20 as a P-type semiconductor and the second conductive type semiconductor 30 as an N-type semiconductor as an example. Exemplarily, the P-type semiconductor is placed in the first recess 1011, and the N-type semiconductor is placed in the second recess 1012. The P-type semiconductor and the N-type semiconductor are spaced apart in a circumferential direction around the through hole 102 .

[0039] The first metal electrode 40 and the second metal electrode 50 are both used to connect the first conductive type semiconductor 20 and the second conductive type semiconductor 30, thereby forming a PN junction. Exemplarily, the first metal electrode 40 connects the end of the P-type semiconductor and the N-type semiconductor away from the through hole 102, and the first metal electrode 40 is a stretchable electrode, and in order to adapt to the shape of the pipeline, the first connecting portion 1013 where the first metal electrode 40 is placed can be set to an arc shape. The second metal electrode 50 connects the end of the P-type semiconductor and the N-type semiconductor close to the through hole 102, and the second metal electrode 50 is also a stretchable electrode. The material of the first metal electrode 40 and the second metal electrode 50 can be liquid metal.

[0040] The first external connection electrode 60 and the second external connection electrode 70 may be lead wires. Exemplarily, one end of the first external connection electrode 60 is connected to one end of the P-type semiconductor, and the other end of the first external connection electrode 60 may be connected to the positive electrode of the external power supply; one end of the second external connection electrode 70 is connected to one end of the N-type semiconductor, and the other end of the second external connection electrode 70 may be connected to the negative electrode of the external power supply.

[0041] Figure 3 It is a schematic diagram of the top view of another semiconductor refrigerator provided according to an embodiment of the present invention. Figure 4 FIG. 1 is a schematic diagram of the overall structure of another semiconductor refrigerator provided according to an embodiment of the present invention. Figure 3 and Figure 4 As shown, the structure and Figure 2The structure of the semiconductor refrigerator shown is similar, the difference is Figure 3 In the structure of the semiconductor refrigerator shown, the substrate 10 is filled with porous materials to provide better tensile properties. The semiconductor refrigerator also includes: a substrate 10, a plurality of first conductive type semiconductors 20, a plurality of second conductive type semiconductors 30, a plurality of first metal electrodes 40, a plurality of second metal electrodes 50, a first external connection electrode 60 and a second external connection electrode 70; a groove 101 and a through hole 102 are provided on the substrate 10, and the groove 101 surrounds the through hole 102; the groove 101 includes a plurality of first recessed portions 1011, a plurality of second recessed portions 1012, a plurality of first connecting portions 1013 and a plurality of second connecting portions 1014. The setting position of the semiconductor and the connection relationship between the metal electrode and the semiconductor are similar to Figure 2 The structures shown are the same.

[0042] refer to Figure 3 and Figure 4 , since the pipe diameter of the TOC analyzer is small, porous filling materials are difficult to prepare directly, and since liquid metal is easy to flow, it is easy to leak when it directly contacts porous materials. Therefore, semiconductor refrigerators can be prepared by photocuring 3D printing. Photocuring 3D printing has the characteristics of high printing precision, which is suitable for printing small-sized porous structures and can achieve precise customization. Polyurethane acrylate flexible resins can be used, which have good tensile properties. By designing the porous filling material near the liquid metal to be solid and the porous material in other positions unchanged, the needs of both the fixation of the liquid metal and the porosity of the flexible material can be met at the same time. Exemplarily, the printing method can be selected as a sinking light-curing printer, and the first recessed part 1011 and the second recessed part 1012 for placing the P-type semiconductor and the N-type semiconductor, as well as the first connecting part 1013 and the second connecting part 1014 for placing the liquid metal are pre-designed. When a layer of groove 101 is printed, the printing is stopped, and the P-type semiconductor and the N-type semiconductor are placed in the corresponding positions of the groove 101, and the sealant is filled around to fix the semiconductor, and then the liquid metal is added to the first connecting part 1013 and the second connecting part 1014 to achieve the connection between the P-type semiconductor and the N-type semiconductor. After completion, the printing package is continued, and the next layer of groove 101 is printed, and the manufacturing of a flexible semiconductor refrigerator for a small diameter can be realized. When the first external connection electrode 60 and the second external connection electrode 70 are connected to an external power supply, the current passed through the loop composed of the P-type semiconductor and the N-type semiconductor will generate a thermoelectric effect at the joint of the P-type semiconductor and the N-type semiconductor, and heat absorption or heat release is achieved, thereby controlling the temperature of the liquid in the pipeline in the through hole 102.

[0043] The technical solution of the embodiment of the present invention is to set a groove surrounding the through hole on the substrate, and divide the groove into multiple first recessed parts, multiple second recessed parts, multiple first connecting parts and multiple second connecting parts, the first recessed parts and the second recessed parts are spaced apart in the circumferential direction around the through hole, place the first conductive type semiconductor in the first recessed part, place the second conductive type semiconductor in the second recessed part, place the first metal electrode in the first connecting part to connect the first conductive type semiconductor and the second conductive type semiconductor at one end away from the through hole; place the second metal electrode in the second connecting part to connect the first conductive type semiconductor and the second conductive type semiconductor at one end close to the through hole, one end of one of the first conductive type semiconductor and the second conductive type semiconductor can be connected to the positive and negative poles of an external power supply through the first external connecting electrode and the second external connecting electrode, the formed semiconductor refrigerator can be set in the TOC analyzer to adjust the temperature of the fluid, and the formed semiconductor refrigerator matches the pipeline where the fluid is located, thereby improving the temperature control accuracy.

[0044] Based on the technical solution of the above invention embodiment, Figure 2 Optionally, the shape of the substrate 10 includes a cylindrical shape; and / or, the substrate 10 includes a flexible resin substrate.

[0045] In an embodiment of the present invention, the substrate 10 can be set to a cylindrical shape, and a through hole 102 can be opened in the middle of the substrate 10. The through hole 102 is used to accommodate a pipe. The cylindrical substrate 10 can wrap or wrap the pipe, which is more conducive to temperature regulation of the liquid in the pipe when the semiconductor refrigerator is working. Compared with the square sheet design, setting the substrate 10 to a cylindrical shape can improve the accuracy of temperature regulation of the liquid in the pipe.

[0046] The substrate 10 can also be set as a flexible resin substrate. The substrate 10 can be an organic elastomer with low thermal conductivity. For example, a polyurethane acrylate flexible resin can be selected. This type of resin has good tensile properties and can well meet the needs of flexible materials. Compared with the use of hard ceramic materials such as aluminum nitride in the prior art, the use of flexible resin in the embodiment of the present invention can achieve better bending and stretching to match the design of the pipeline.

[0047] Based on the technical solution of the above invention embodiment, Figure 2 Optionally, the shapes of the first recessed portion 1011 and the second recessed portion 1012 include rectangles; and / or the shape of the first connecting portion 1013 includes an arc.

[0048] In the embodiment of the present invention, the shapes of the first recessed portion 1011 and the second recessed portion 1012 are set to be rectangular, so as to place a P-type semiconductor or an N-type semiconductor therein. The shapes of the first recessed portion 1011 and the second recessed portion 1012 are the same as the shapes of the semiconductor, which is conducive to stabilizing the semiconductor, thereby forming a semiconductor refrigerator based on the Peltier effect. The shape of the first connecting portion 1013 is set to be arc-shaped, which is convenient for placing a stretchable electrode therein, and is more conducive to forming a PN junction ring arranged around the through hole 102, so as to achieve temperature control of the liquid in the pipe passing through the through hole 102.

[0049] Based on the technical solution of the above invention embodiment, Figure 2 Optionally, the first metal electrode 40 and the second metal electrode 50 include liquid metal electrodes.

[0050] In an embodiment of the present invention, the liquid metal electrode is a stretchable electrode. Exemplarily, the liquid metal electrode can be a gallium-indium eutectic alloy (Eutectic Gallium-Indium Alloy, EGaIn). EGaIn is a eutectic alloy composed of gallium and indium in a certain proportion. The melting point of liquid metal is low and it is usually liquid at room temperature. Therefore, when liquid metal is used as an electrode material, it has good fluidity and deformability, can better connect P-type semiconductors and N-type semiconductors, and realize the structural design around the through hole 102. When EGaIn is selected as the liquid metal electrode, it has excellent electrical conductivity and high electrical conductivity, and can effectively transmit current.

[0051] Based on the technical solution of the above invention embodiment, Figure 2 Optionally, the substrates of the first conductive type semiconductor 20 and the second conductive type semiconductor 30 include a bismuth telluride substrate.

[0052] In the embodiment of the present invention, when the first conductive type semiconductor 20 is a P-type semiconductor, the second conductive type semiconductor 30 is an N-type semiconductor; when the first conductive type semiconductor 20 is an N-type semiconductor, the second conductive type semiconductor 30 is a P-type semiconductor. The embodiment of the present invention is described by taking the first conductive type semiconductor 20 as a P-type semiconductor and the second conductive type semiconductor 30 as an N-type semiconductor as an example. The substrates of both the P-type semiconductor and the N-type semiconductor are made of bismuth telluride substrates. Bismuth telluride has a layered crystal structure, each layer of which is composed of tellurium atoms and bismuth atoms arranged alternately. The layered crystal structure makes bismuth telluride have a lower thermal conductivity in the direction perpendicular to the layer, and has better electrical conductivity within the layer, so that it can be used as an excellent thermoelectric material. Bismuth telluride also has good thermoelectric properties and can realize the mutual conversion between thermal energy and electrical energy. In the embodiment of the present invention, the P-type semiconductor can use bismuth telluride-antimony telluride (Bi 2 Te 3-Sb 2 Te 3 ), in Bi 2 Te 3 Adding Sb to the substrate 2 Te 3 , which can increase the hole concentration, increase the conductivity and Seebeck coefficient of the material, and form Bi 2 Te 3 -Sb 2 Te 3 The solid solution has better temperature stability. N-type semiconductors can use bismuth telluride-bismuth selenide (Bi 2 Te 3 -Bi 2 Se 3 ), in Bi 2 Te 3 Add Bi to the substrate 2 Se 3 , the thermoelectric performance of N-type semiconductors can be optimized by adjusting the ratio.

[0053] Based on the technical solution of the above invention embodiment, Figure 2 Optionally, the semiconductor refrigerator further includes: a filling layer; the filling layer is arranged between the first recessed portion 1011 and the first conductive type semiconductor 20; and the filling layer is arranged between the second recessed portion 1012 and the second conductive type semiconductor 30.

[0054] In an embodiment of the present invention, the filling layer may be a sealant. After placing the first conductive type semiconductor 20 in the first recess 1011 and the second conductive type semiconductor 30 in the second recess 1012, the sealant is filled between the first conductive type semiconductor 20 and the first recess 1011, and between the second conductive type semiconductor 30 and the second recess 1012 to fix the first conductive type semiconductor 20 and the second conductive type semiconductor 30.

[0055] Figure 5 FIG. 1 is a schematic diagram of the structure of another semiconductor refrigerator provided according to an embodiment of the present invention. Figure 5 As shown, the semiconductor refrigerator further includes: a temperature control module 100; the temperature control module 100 is connected to the first external connection electrode 60 and the second external connection electrode 70; the temperature control module 100 is used to adjust the duty cycle of the input semiconductor refrigerator to achieve temperature control.

[0056] When using a TOC analyzer to measure the total organic carbon in a solution, if the temperature of the solution to be measured can be controlled at a certain temperature (such as 25°C), the conductivity response curve at this temperature can be measured, and temperature compensation can be omitted or a small amount of temperature compensation can be used to improve the accuracy of the measurement. For a TOC analyzer using ultraviolet lamp oxidation, the ultraviolet lamp is the main temperature influencing factor. Therefore, a temperature control system is added to the ultraviolet lamp oxidation outlet to stably control its temperature at 25°C (or other temperatures), which can reduce the error caused by temperature. In addition, for samples with temperature requirements, temperature control can also be used to keep a certain temperature in the pipeline. In an embodiment of the present invention, a temperature control module 100 is provided, which is connected to the lead wire, and the duty cycle of the input semiconductor refrigerator is adjusted to achieve temperature control of the liquid in the pipeline. Heating or cooling can be achieved by changing the positive and negative current and the duty cycle.

[0057] Figure 6 Schematic diagram of the working principle of the semiconductor refrigerator provided according to an embodiment of the present invention. Figure 6 Optionally, the temperature control module 100 includes a neural network unit 200; the neural network unit 200 is used to convert the difference between the actual temperature and the target temperature of the semiconductor refrigerator into a proportional parameter, an integral parameter and a differential parameter.

[0058] In the embodiment of the present invention, the temperature control module 100 is configured as an incremental proportional-integral-differential controller based on a neural network, which can realize adaptive control of temperature. Figure 7 Schematic diagram of the working principle of a neural network unit according to an embodiment of the present invention. Figure 7 As shown, in an embodiment of the present invention, a three-layer error back propagation neural network is used, including an input layer i, a hidden layer j and an output layer l. The input x(i) of the input layer i is e(k), e(k)-e(k-1), e(k)-2e(k-1)+e(k-2) and 1 respectively, and the output of the output layer l is the proportional parameter Kp, the integral parameter Ki and the differential parameter Kd. Net(k) is selected to represent the input of the input layer i, O(k) represents the output of the input layer i, the superscript represents the layer where the neuron is located, and the subscript represents the position of the neuron in the layer. The input and output of the input layer i are defined as: net i 1 (k) = x(i) and O i 1 (k) = x(i). The input and output of hidden layer j are: and O j 2 (k) = f(net j 2 (k)). The input and output of the output layer l are: and O l 3 (k) = g(net l 3 (k)), where O 1 3 =K p ,O 2 3 =K i ,O 3 3 =K d . Choose the loss function E(k), where T real Indicates the actual temperature, T expect Indicates the target temperature: Through the three-layer error back propagation neural network algorithm, the hyperbolic tangent function is selected as the activation function f(*) of the hidden layer j, and the Sigmund function is selected as the activation function g(*) of the output layer l, and the learning algorithm formula of the weighted coefficient of the output layer l is obtained: ΔW lj 3 (k) = αΔW lj 3 (k-1)+ηδ l 3 O j 2 (k) and Learning algorithm formula for the weighted coefficient of hidden layer j: ΔW ji 2 (k) = αΔW ji 2 (k-1)+ηδ j 2 O i 1 (k) and Among them, α is the inertia coefficient and η is the learning rate.

[0059] Based on the technical solution of the above invention embodiment, Figure 6 Optionally, the temperature control module 100 also includes a control unit 300; the control unit 300 is connected to the neural network unit 200; the control unit 300 is used to convert the proportional parameter, the integral parameter and the differential parameter into a duty cycle.

[0060] In an embodiment of the present invention, the control unit 300 may be a proportional-integral-derivative (PID) controller. The proportional parameter Kp, the integral parameter Ki and the differential parameter Kd may be converted into a duty cycle D(k) by the PID controller. The PID controller controls the semiconductor refrigerator according to the deviation between the target temperature and the actual temperature through a combination of the three control functions of proportion, integration and differentiation, so that the actual temperature is as close to the target temperature as possible. The application of the PID controller is relatively simple in principle, easy to implement, and has strong adaptability and good robustness.

[0061] Based on the technical solution of the above invention embodiment, Figure 6 Optionally, the temperature control module 100 further includes a duty cycle control unit 400; the duty cycle control unit 400 is connected to the control unit 300; the duty cycle control unit 400 is used to control the duty cycle of the input semiconductor refrigerator through a pulse width modulation technique.

[0062] In the embodiment of the present invention, the duty cycle of the input semiconductor refrigerator is controlled by pulse width modulation technology, so that the semiconductor refrigerator can achieve the effect of heating or cooling, thereby controlling the temperature of the liquid in the pipeline.

[0063] It should be understood that the various forms of processes shown above can be used to reorder, add or delete steps. For example, the steps described in the present invention can be executed in parallel, sequentially or in different orders, as long as the desired results of the technical solution of the present invention can be achieved, and this document does not limit this.

[0064] The above specific implementations do not constitute a limitation on the protection scope of the present invention. It should be understood by those skilled in the art that various modifications, combinations, sub-combinations and substitutions can be made according to design requirements and other factors. Any modification, equivalent substitution and improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.

Claims

1. A semiconductor refrigerator, characterized in that: include: A substrate; a groove and a through hole are provided on the substrate, and the groove surrounds the through hole; The groove includes a plurality of first recessed portions, a plurality of second recessed portions, a plurality of first connecting portions, and a plurality of second connecting portions; the first recessed portions and the second recessed portions are spaced apart in a circumferential direction around the through hole; the first connecting portion connects one end of the first recessed portion and the second recessed portion away from the through hole, and the second connecting portion connects one end of the first recessed portion and the second recessed portion close to the through hole; A plurality of first conductive type semiconductors and a plurality of second conductive type semiconductors; the first conductive type semiconductors are located in the first recessed portions in a one-to-one correspondence, and the second conductive type semiconductors are located in the second recessed portions in a one-to-one correspondence; A plurality of first metal electrodes and a plurality of second metal electrodes, wherein the first metal electrodes are located in a one-to-one correspondence at the first connecting portion and are used to connect the first conductive type semiconductor and the second conductive type semiconductor at one end away from the through hole; and the second metal electrodes are located in a one-to-one correspondence at the second connecting portion and are used to connect the first conductive type semiconductor and the second conductive type semiconductor at one end close to the through hole; A first external connection electrode and a second external connection electrode, wherein the first external connection electrode is located in one of the plurality of first recessed portions and is used to connect to the first conductive type semiconductor; and the second external connection electrode is located in one of the plurality of second recessed portions and is used to connect to the second conductive type semiconductor.

2. The semiconductor refrigerator according to claim 1, characterized in that: The shape of the substrate includes a cylindrical shape; and / or the substrate includes a flexible resin substrate.

3. The semiconductor refrigerator according to claim 2, characterized in that: The shapes of the first recessed portion and the second recessed portion include a rectangle; And / or, the shape of the first connecting portion includes an arc shape.

4. The semiconductor refrigerator according to claim 1, characterized in that: The first metal electrode and the second metal electrode include liquid metal electrodes.

5. The semiconductor refrigerator according to claim 1, characterized in that: The substrates of the first conductive type semiconductor and the second conductive type semiconductor include a bismuth telluride substrate.

6. The semiconductor refrigerator according to claim 5, characterized in that: Also includes: Filling layer; The filling layer is disposed between the first recessed portion and the first conductive type semiconductor; and the filling layer is disposed between the second recessed portion and the second conductive type semiconductor.

7. The semiconductor refrigerator according to claim 1, characterized in that: Also includes: Temperature control module; The temperature control module is connected to the first external connection electrode and the second external connection electrode; The temperature control module is used to adjust the duty cycle of the input to the semiconductor refrigerator to achieve temperature control.

8. The semiconductor refrigerator according to claim 7, characterized in that: The temperature control module includes a neural network unit; The neural network unit is used to convert the difference between the actual temperature and the target temperature of the semiconductor refrigerator into a proportional parameter, an integral parameter and a differential parameter.

9. The semiconductor refrigerator according to claim 8, characterized in that: The temperature control module also includes a control unit; the control unit is connected to the neural network unit; The control unit is used for converting the proportional parameter, the integral parameter and the differential parameter into the duty cycle.

10. The semiconductor refrigerator according to claim 9, characterized in that: The temperature control module further includes a duty cycle control unit; the duty cycle control unit is connected to the control unit; The duty cycle control unit is used to control the duty cycle of the semiconductor refrigerator input through pulse width modulation technology.

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