Ultra-wideband low noise amplifier based on inductive peaking and rlc feedback techniques from 2-22 ghz

Abstract

The application discloses a 2-22GHz ultra-wideband low-noise amplifier based on inductance peaking and RLC negative feedback technology, and is applied to the field of wireless communication. The application designs and manufactures a 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC based on a Sanan P15LN_LNA pHMET transistor, and the 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC has smooth gain, excellent noise and linearity in the working frequency band of the ultra-wideband, the input and output are matched with a standard 50 ohm, the occupied area is small, and the 2-22GHz ultra-wideband low-noise amplifier GaAs MMIC can be used in various radio frequency front ends in 2-22GHz, can be used in sub-6GHz wireless communication application, and is compatible with multiple communication protocols; and can be applied to millimeter wave frequency bands such as communication, phased array radar, millimeter wave imaging, long-distance remote sensing and various situations.

Description

TECHNICAL FIELD

[0001] The application belongs to the field of wireless communication, and particularly relates to an ultra-wideband low-noise amplifier. BACKGROUND

[0002] In recent decades, wireless communication technology has developed vigorously, and different communication standards and protocols have emerged in an endless stream. In order to meet the market and industrial demand for high-quality and large-capacity communication, wideband and high-performance design has become one of the important development trends of the current radio frequency front end. As the first active device of the radio frequency receiving front end, the low-noise amplifier is used to process the weak signal from the antenna, amplify it, and at the same time suppress the noise of the subsequent device to the entire system, so it plays a crucial role in the base station communication system, and directly determines the noise coefficient and dynamic range of the entire radio frequency receiving front end system. With the development of 5G technology, it is urgent to improve the data transmission rate and spectrum utilization, which requires the design of the low-noise amplifier to cover the 5G frequency band, not only to suppress noise, but also to more flexibly process various signals to improve the quality of 5G communication. The mainstream devices currently have GaAs pHEMT, SiGe HBT and CMOS FET, among which the GaAs pHEMT has the best noise performance, and the low-noise amplifier based on the GaAs pHEMT process can not only provide higher output power, wider working frequency band, but also reduce the noise level, thereby greatly reducing the complexity of the radio frequency receiving front end system, and the main advantages of other devices are low cost. SUMMARY

[0003] To solve the above technical problems, the application discloses an ultra-wideband low-noise amplifier GaAs MMIC working at 2-22GHz based on Sanan P15LN_LNA pHEMT transistor (the transistor has the advantages of low noise floor and high gain-bandwidth product) and is designed and manufactured, which has smooth gain, excellent noise and linearity in the working frequency band of the ultra-wideband, the input and output are matched with standard 50 ohms, occupies smaller area, and can be used in various radio frequency front ends within 2-22GHz, and can be used in sub-6GHz wireless communication applications and compatible with multiple communication protocols; and can be applied to millimeter wave frequency bands such as communication, phased array radar, millimeter wave imaging, long-distance remote sensing and various situations.

[0004] The technical scheme adopted by the application is: the 2-22GHz ultra-wideband low-noise amplifier based on inductive peaking and negative feedback technology adopts a single common-source common-gate structure, and comprises: the source of a first transistor M1 is connected to ground, the drain of the first transistor M1 is connected to the source of a second transistor M2, the gate of the first transistor M1 is connected to a radio frequency signal input end through a first capacitor C1, and the gate of the second transistor M2 is connected to ground through a capacitor C4.

[0005] The gate of the first transistor M1 is also connected with the first end of the first resistor R1, and the second end of the first resistor R1 is connected with the first bias voltage;

[0006] The gate of the first transistor M1 is also connected with the first end of the third resistor R3, the second end of the third resistor R3 is connected with the first end of the second capacitor C2, and the second end of the second capacitor C2 is connected with the radio frequency signal output end;

[0007] The second end of the second capacitor C2 is also connected with the first end of the first inductor L1, and the second end of the first inductor L1 is connected with VDD;

[0008] The second end of the first inductor L1 is also connected with the first end of the third capacitor C3, and the second end of the third capacitor C3 is connected with the ground;

[0009] The second end of the first inductor L1 is also connected with the first end of the fifth resistor R5, the second end of the fifth resistor R5 is connected with the first end of the sixth resistor R6, the second end of the sixth resistor R6 is connected with the first end of the seventh resistor R7, and the second end of the seventh resistor R7 is connected with the gate of the second transistor M2;

[0010] The first end of the first inductor L1 is also connected with the first end of the second inductor L2, the first end of the second inductor L2 is connected with the first end of the second resistor R2, the second end of the second inductor L2 is connected with the second end of the second resistor R2, and the second end of the second inductor L2 is also connected with the drain of the second transistor M2;

[0011] The first end of the eighth resistor R8 is connected with the gate of the second transistor M2, and the second end of the eighth resistor R8 is connected with the ground;

[0012] The first end of the fourth resistor R4 is connected with the gate of the second transistor M2, and the second end of the fourth resistor R4 is connected with the second bias voltage.

[0013] The super wideband low noise amplifier GaAs MMIC designed and manufactured in the application has smooth gain, excellent noise and linearity in the working frequency band of the super wideband, the input and output are matched with the standard 50 ohms, the occupied area is small, can be used in various radio frequency front ends in 2-22GHz, can be used in sub-6GHz wireless communication application, compatible with multiple communication protocols, and can be applied to millimeter wave frequency band such as communication, phased array radar, millimeter wave imaging, long distance remote sensing and various situations. BRIEF DESCRIPTION OF DRAWINGS

[0014] Figure 1 It is the circuit structure diagram of the application.

[0015] Figure 2 It is the actual layout of the application.

[0016] Figure 2In the diagram, 1 is the RF input terminal, 2 is the RF output terminal, 3 is the VDD input point, 4 is the Vg1 input point, 5 is the Vg2 input point, and 6 is the ground point. Detailed Implementation

[0017] To facilitate understanding of the technical content of this invention by those skilled in the art, the following description, in conjunction with the accompanying drawings, further illustrates the invention.

[0018] like Figure 1 , Figure 2 As shown, the source of M1 is grounded, and the drain of M1 is connected to the source of M2; the single-ended RF input signal is input to one end of the DC blocking capacitor C1, and the other end of C1 is connected to the gate of M1, one end of R1 (the other end of R1 is connected to Vg1), and one end of R3; the other end of R3 is connected to one end of C2, and the other end of C2 is connected to one end of L1 (the other end of L1 is connected to VDD), L2 (the other end of L2 is connected to the drain of M2), and R2 (the other end of R2 is connected to the drain of M2); the other end of C2 is also connected to the output RF_out; the gate of M2 is connected to one end of R4 (the other end of R4 is connected to Vg2), R8 (the other end of R8 is grounded), R7 (the other end of R7 is connected to one end of R6, the other end of R6 is connected to one end of R5, the other end of R5 is connected to VDD and one end of C3, the other end of C3 is grounded), and C4 (the other end of C4 is grounded).

[0019] This invention employs transistors M1 and M2 to form a single-stage common-source cascode amplifier, aiming to reduce the trade-off between power consumption and area while providing a large gain-bandwidth product. Simultaneously, to provide ultra-wideband impedance matching and minimize losses and stability issues caused by reflections, a series RLC negative feedback structure consisting of L2, C2, R2, and R3 is used. To reduce the area of ​​the low-noise amplifier (MMIC), a transmission line is used to equivalently replace the inductor L2. By adjusting the transmission line parameters, resistance, and capacitance values, a good trade-off in gain can be achieved across the entire frequency band, while ensuring low noise levels and a stability factor consistently greater than 1.

[0020] In addition, to address the high-frequency gain roll-off issue caused by high-frequency parasitic capacitance in the circuit, a parallel peaking inductor L1 is used at the output to compensate for the high-frequency gain. In the cascode structure, the gate of transistor M1 is connected to the input RF signal through a DC blocking capacitor C1 and a DC bias is connected through a large resistor R1 to isolate interference between DC and AC. The bias of transistor M2 is generated by a voltage divider of resistors R5, R6, R7, and R8, and an additional modulation voltage is connected through resistor R4 to facilitate circuit state adjustment. The gate of M2 is connected to ground by a filter capacitor C4 to filter out interference. The power supply is filtered by an LC resonator composed of peaking inductor L1 and filter capacitor C3 before being connected to the circuit to remove the influence of power supply noise.

[0021] Figure 1RF_in is an input single-ended radio frequency signal, RF_out is an output single-ended radio frequency signal, Vg is a bias voltage, R is a resistor, M is a transistor, C is a capacitor, and L is an inductor.

[0022] In the embodiment, the length and width of the transistors M1 and M2 are 0.15 um and 75 um respectively, the index of cross is 4, the gate of M1 is biased at -0.2 V, the source is grounded, the drain is connected to the source of M2, the gate of M2 is biased at 1 V, the drain is connected to the output, the power supply voltage is 4 V, and the static current is 51 mA. In the negative feedback structure, R2 and R3 are 193 Ω and 1 kΩ respectively, C2 is 8 pF, the transmission line used to replace L2 has a width of 20 um and a total length of 867 um, the dielectric constant of the GaAs substrate used is 12.9, and the layer thickness is 100 um. Based on the component parameters given herein, the amplifier of the present application can stably work (K>1) in the frequency band of 2-22 GHz, the gain is 18.6-16.8 dB, the return loss is better than -5 dB, the noise figure is less than 2 dB, the average OP1dB in the band is 14.5 dB, the DC power consumption is 204 mW, the average additional efficiency is 16%, and the average FOM is 72.85 (taking 6 frequency points of 2, 6, 10,..., 22 GHz). The size of the low-noise amplifier MMIC including the pads is 2.05 mm*1.25 mm.

[0023] Those skilled in the art will appreciate that the embodiments described herein are presented for the purpose of helping the reader understand the principles of the present application, and should be understood as not limiting the scope of protection of the present application to such specific recitations and embodiments. The present application can have various modifications and changes. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included in the scope of protection of the claims of the present application.

Claims

1. An ultra-wideband low noise amplifier of 2-22 GHz based on inductive peaking and negative feedback technique characterized by, The single-stage common-source common-gate structure comprises: a first transistor M1 and a second transistor M2; the source of the first transistor M1 is connected to ground, the drain of the first transistor M1 is connected to the source of the second transistor M2, the gate of the first transistor M1 is connected to a radio frequency signal input terminal through a first capacitor C1, and the gate of the second transistor M2 is connected to ground through a capacitor C4; the drain of the second transistor M2 is connected to a radio frequency signal output terminal through a parallel connection of a second inductor L2 and a second resistor R2; The gate of the first transistor M1 is connected to a direct current bias through a first resistor R1, and the gate of the second transistor M2 is connected to the direct current bias through resistor voltage division; the resistor voltage division comprises a fifth resistor R5, a sixth resistor R6, a seventh resistor R7 and an eighth resistor R8 connected in series; the fifth resistor R5 is connected to VDD, and the eighth resistor R8 is connected to ground; the voltage division on the eighth resistor R8 is used as the direct current bias of the second transistor M2; The parallel connection of the second inductor L2 and the second resistor R2 is connected to VDD through a parallel connection of a peaking inductor L1 and the end connected to the radio frequency signal output terminal; The parallel connection of the second inductor L2 and the second resistor R2 is also connected to a second capacitor C2 and a third resistor R3 to form a series RLC negative feedback structure; the other end of the series RLC negative feedback structure is connected to the gate of the first transistor M1.

2. The inductance peaking and negative feedback technique based 2-22 GHz ultra- wideband low noise amplifier according to claim 1, characterized by, The gate of the second transistor M2 is also connected to an additional modulation voltage through a resistor R4.

3. The inductance peaking and negative feedback technique based 2-22 GHz ultra- wideband low noise amplifier according to claim 2, characterized by, The gate of the second transistor M2 is also connected to a filter capacitor C4 connected to ground.

4. The inductance peaking and negative feedback technique based 2-22 GHz ultra- wideband low noise amplifier according to claim 3, characterized by, The inductor L2 is replaced by a transmission line.

Images