Double-target co-plating magnetron sputtering doping proportion control device and method

Abstract

The invention provides a double-target co-plating magnetron sputtering doping proportion control device and method, and relates to the technical field of thin film preparation, the double-target co-plating magnetron sputtering doping proportion control device comprises a target material assembly composed of a first target material and a second target material, and a coating assembly located on one side of the target material assembly, and the coating assembly comprises a rotary drum and a plurality of substrates evenly arranged on the outer wall of the rotary drum; the shielding assembly is located between the target material assembly and the film coating assembly and is symmetrically arranged relative to the central axis of the rotating drum, the shielding assembly comprises a fixing frame, multiple baffles and multiple first driving devices, the multiple baffles are arranged in the height direction of the inner side of the fixing frame at intervals, and the multiple first driving devices are used for driving the baffles to move in the horizontal direction; and the position of the baffle shielding the target material in the horizontal direction is adjusted. Through the arrangement of the baffle and the first driving device in the shielding assembly, the sputtering area of the target materials on the substrate can be adjusted, the sputtering coverage range of the two target materials on the substrate is effectively controlled, and therefore accurate control over the doping proportion of different materials on the substrate is achieved.

Description

Technical Field

[0001] The invention relates to the field of thin film material manufacturing, and in particular to a dual-target co-plating magnetron sputtering doping ratio control device and method. Background Art

[0002] In the manufacturing process of modern optical and functional films, doping technology is one of the important means to optimize and regulate material properties. Magnetron sputtering coating technology is widely used in the preparation of thin film materials, and the accuracy of controlling the doping ratio has a crucial impact on the final performance of the film. However, traditional doping methods usually rely on controlling the sputtering power or time of the target or re-melting the target, which makes it difficult to achieve precise control of different target materials, especially in applications that require high-precision doping, such as multilayer optical films or coatings with specific functions.

[0003] At present, in order to achieve uniform doping of different materials on the substrate, the existing technology mainly adjusts the sputtering parameters or changes the design of the target material. However, these methods often have problems such as difficult to accurately control the doping ratio and poor stability, resulting in the film uniformity and doping accuracy being difficult to achieve expectations. In addition, during high-power magnetron sputtering, there are large differences in the sputtering rate, angle and distribution of different materials, which further increases the difficulty of controlling the doping ratio. Summary of the invention

[0004] In view of this, the present invention proposes a dual-target co-plating magnetron sputtering doping ratio control device and method, which can effectively control the doping ratio of different materials, thereby improving the uniformity and functionality of the film.

[0005] In a first aspect, the present invention discloses a dual-target co-plating magnetron sputtering doping ratio control device, comprising:

[0006] A target assembly, wherein the target assembly comprises a first target and a second target, wherein the first target and the second target are arranged side by side;

[0007] A coating assembly is located on one side of the target assembly, the coating assembly includes a rotating drum and a plurality of substrates evenly arranged on the outer wall of the rotating drum, and the rotating drum is vertically located at the center of the first target and the second target;

[0008] The shielding assembly is located between the target assembly and the coating assembly and is symmetrically arranged relative to the central axis of the rotating drum. The shielding assembly includes a fixed frame, a baffle and a first driving device. A plurality of baffles are arranged at intervals along the height direction of the inner side of the fixed frame. A plurality of first driving devices are arranged on the fixed frame, respectively used to drive the corresponding baffles to move in the horizontal direction to adjust the position of the baffle to shield the target material in the horizontal direction.

[0009] On the basis of the above technical solution, preferably, it also includes a second driving device, and a plurality of second driving devices are arranged on the fixed frame, respectively used to drive the corresponding baffles to move in the vertical direction to adjust the position of the baffles in the vertical direction to block the target material.

[0010] On the basis of the above technical solution, preferably, it also includes a control system, which dynamically adjusts the shielding range of the baffles on each shielding component according to a preset doping ratio so that the doping ratio meets the requirements.

[0011] On the basis of the above technical solution, preferably, the shielding assembly also includes a connecting rod, one end of which is fixedly connected to the baffle, and the other end of which moves through the fixing frame, and each connecting rod is respectively connected to a first driving device and a second driving device.

[0012] On the basis of the above technical solution, preferably, a plurality of mounting surfaces are evenly arranged on the outer side surface of the drum, and a plurality of substrates are spaced apart on the mounting surface along the height direction.

[0013] In a second aspect, the present invention discloses a method for controlling a doping ratio of dual-target co-plating magnetron sputtering, which utilizes the dual-target co-plating magnetron sputtering doping ratio control device described in the first aspect, and includes the following steps;

[0014] S1. Set the sputtering distribution characteristics of target A and target B. The sputtering particle distribution of each target is described according to the Gaussian distribution function. Calculate the sputtering particle distribution function of target A and target B on the substrate when they are not blocked, which are Y A (x TA ,y TA ) and Y B (x TB ,y TB ),in;

[0015]

[0016] Where Y 0A , Y 0B is the maximum sputtering rate, exp is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, respectively. TA and TA represents the position coordinates of a point on the substrate surface of target A, x TB and TB Indicates the position coordinates of a certain point of target B on the substrate surface;

[0017] S2. In order to realize the sputtering ratio control of target A and target B on the substrate, the occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows:

[0018]

[0019] Where x, y are the coordinates of the baffle, and D is the vertical distance from the target to the baffle;

[0020] Define the occlusion functions of target A and target B as M respectively. A (x TA ,y TA ) and M B (x TB ,y TB ), to adjust the effective sputtering area of ​​targets A and B, thereby controlling the total amount of sputtering of each;

[0021] S3. Under the condition of target material shielding, the actual total sputtering amount Q of target material A and target material B on the substrate is calculated by integral solution. A and Q B , through the formula The coordinates x and y of the baffle in the occlusion function M(x, y, D) are iteratively optimized to determine the optimal baffle position and shape that meets the target ratio, where α is the ratio of substance A to substance B in the film, which is a preset value;

[0022] S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​the target materials A and B is adjusted respectively, so as to accurately control the doping ratio of the thin film.

[0023] On the basis of the above technical solution, preferably, the Gaussian distribution function in step S1 is obtained by experimentally measuring the specific sputtering amount of the target material, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using a nonlinear regression or fitting method. The sputtering distribution characteristics of the target material are determined by its width e and length d, which limits the spatial range of the sputtering particle distribution.

[0024] On the basis of the above technical solution, preferably, the total sputtering amount of target A and target B after shielding is respectively:

[0025]

[0026]

[0027] Among them, ρ A and ρ B They represent the vertical distances from target A and target B to the substrate, respectively, and are used as constants in the calculation. A and d ARespectively represent the width and length of target A, defining the physical size of target A, e B and d B Respectively represent the width and length of target B, dx TA anddy TA are the differential elements of target A along the x-axis and y-axis directions, dx TB anddy TB are the differential elements of target B integrated along the x-axis and y-axis directions respectively.

[0028] On the basis of the above technical solution, preferably, the position of the baffle in the shielding assembly is dynamically adjusted through the control system. In the x-direction, the horizontal movement of each baffle is controlled by the first driving device, so as to adjust the shielding area of ​​the target surface in the x-direction. In the y-direction, the vertical movement of each baffle is controlled by the second driving device, so as to adjust the shielding area of ​​the target surface in the y-direction. The position of each baffle is dynamically adjusted according to the sputtering distribution and shielding requirements of the target material, ensuring that the sputtering amount in each area meets the doping ratio requirements, realizing precise control of the sputtering area, and optimizing the adjustment of the doping ratio.

[0029] Compared with the prior art, the present invention has the following beneficial effects:

[0030] (1) By setting the baffle and the first driving device in the shielding assembly, the sputtering area of ​​the target material on the substrate can be adjusted, and the sputtering coverage of the two target materials on the substrate can be effectively controlled, so as to achieve precise control of the doping ratio of different materials on the substrate. Compared with traditional methods (such as adjusting power or time), the magnetron sputtering doping ratio control device of the present invention is more direct and efficient. The sputtering rate, angle and particle distribution of different target materials are usually different. The shielding assembly can compensate for these differences by dynamically adjusting the effective sputtering area of ​​the target material, making its deposition ratio on the substrate more controllable. This device improves the quality of the film by reducing film defects and optical losses caused by uneven doping. By optimizing the sputtering ratio of different materials, the absorption rate and defect density are reduced, ensuring the reliability of the film in high-performance applications.

[0031] (2) Dual adjustment in the horizontal and vertical directions helps to adjust the shape or size of the sputtering area. The system can more accurately control the sputtering area and proportion of different target materials.

[0032] (3) By setting the sputtering distribution characteristics of target materials A and target materials B, preliminary data is provided for subsequent calculations to ensure the controllability of the sputtering process. The shielding function is designed, and the effective sputtering area of ​​target materials A and target materials B is adjusted by using the position of the baffle to achieve the regulation of the sputtering ratio. The actual total sputtering amount of target materials A and B is calculated by integration, and the material ratio of A to B in the film is accurately controlled through iterative optimization. The shielding area of ​​the baffle is adjusted according to the optimization results to accurately control the doping ratio of the film and ensure that the material performance meets the requirements.

[0033] (4) By introducing experimental measurement and nonlinear regression fitting, the actual sputtering particle distribution data is used to optimize the Gaussian distribution function, thereby accurately describing the sputtering distribution characteristics of the target material. In this way, the sputtering distribution of target material A and target material B can be more in line with the actual process and provide more accurate doping ratio control. This design not only improves the accuracy of sputtering control, but also optimizes the adjustability of the doping ratio of the entire film, ensuring the uniformity and consistency of the film quality.

[0034] (5) The total amount of sputtering of target A and target B under the influence of the shielding component was calculated by integration. The physical dimensions of the target (such as width e, length d) and the sputtering distribution function (Y A and Y B ), and according to the position of the target surface and the distance from the substrate to the target (ρ A and ρ B , this method can achieve precise control of the sputtering area. Ultimately, the formula can optimize the doping ratio to ensure that the sputtering amount in different areas meets the predetermined requirements, thereby achieving efficient and precise sputtering process control BRIEF DESCRIPTION OF THE DRAWINGS

[0035] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0036] Figure 1 It is a schematic diagram of the three-dimensional structure of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0037] Figure 2 It is a front view of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0038] Figure 3 It is a top view of the dual-target co-plating magnetron sputtering doping ratio control device disclosed in the present invention;

[0039] Reference numerals:

[0040] 1. Target assembly; 11. First target; 12. Second target; 2. Coating assembly; 21. Rotating drum; 22. Substrate; 3. Shielding assembly; 31. Fixing frame; 32. Baffle; 33. First driving device; 34. Second driving device; 35. Connecting rod; 210. Mounting surface. DETAILED DESCRIPTION

[0041] The following will be combined with the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0042] like Figure 1 As shown, combined Figure 2 and 3 An embodiment of the present invention discloses a dual-target co-plating magnetron sputtering doping ratio control device, including a target material component 1, a coating component 2 and a shielding component 3.

[0043] The target assembly 1 includes a first target 11 and a second target 12 , which are arranged side by side to facilitate controlling the interaction and superposition of sputtered particles through spatial distribution to form a mixed coating on the substrate 22 .

[0044] The coating assembly 2 is located on one side of the target assembly 1. The coating assembly 2 includes a rotating drum 21 and a plurality of substrates 22 evenly arranged on the outer wall of the rotating drum 21. The rotating drum 21 is vertically located at the center of the first target 11 and the second target 12. The setting of the rotating drum 21 arranges the substrate 22 in a dynamically rotating environment and is vertically located at the center of the target, so that the sputtered particles evenly cover the surface of the substrate 22 to improve the uniformity of the thin film. The rotation of the rotating drum 21 can realize dynamic adjustment of the distribution of sputtered particles to avoid local uneven deposition caused by a fixed position.

[0045] The shielding assembly 3 is located between the target assembly 1 and the coating assembly 2, and is symmetrically arranged relative to the central axis of the rotating drum 21. The shielding assembly 3 includes a fixed frame 31, a baffle 32 and a first driving device 33. A plurality of baffles 32 are arranged at intervals along the inner height direction of the fixed frame 31. A plurality of first driving devices 33 are arranged on the fixed frame 31, and are respectively used to drive the corresponding baffles 32 to move in the horizontal direction to adjust the position of the baffle 32 in the horizontal direction to shield the target. The first driving device 33 is responsible for the precise movement of the baffle 32, and adjusts the effective area of ​​the target sputtering by shielding, thereby realizing the precise control of the sputtering ratio of the first target 11 and the second target 12.

[0046] By setting the baffle 32 and the first drive device 33 in the shielding component 3, the sputtering area of ​​the target material on the substrate 22 can be adjusted, and the sputtering coverage of the two target materials on the substrate 22 can be effectively controlled, so as to achieve precise control of the doping ratio of different materials on the substrate 22. Compared with traditional methods (such as adjusting power or time), the magnetron sputtering doping ratio control device of the present invention is more direct and efficient. The sputtering rate, angle and particle distribution of different target materials are usually different. The shielding component 3 can compensate for these differences by dynamically adjusting the effective sputtering area of ​​the target material, making its deposition ratio on the substrate 22 more controllable. This device improves the quality of the film by reducing film defects and optical losses caused by uneven doping. By optimizing the sputtering ratio of different materials, the absorption rate and defect density are reduced, ensuring the reliability of the film in high-performance applications.

[0047] As some preferred embodiments, the shielding assembly 3 further includes a second driving device 34, and a plurality of second driving devices 34 are provided on the fixing frame 31, and are respectively used to drive the corresponding baffles 32 to move in the vertical direction, so as to adjust the position of the baffles 32 in the vertical direction to shield the target material. Through the adjustment in the vertical direction, the coverage range of the target material on the substrate 22 can be further optimized, thereby accurately controlling the sputtering ratio of the two target materials.

[0048] In cases where more precise control of the doping layer is required, vertical adjustment helps to adjust the shape or size of the sputtering area. The sputtering rate of different target materials may vary with angle and position. Vertical control can help adjust the sputtering intensity of the target material at different positions, thereby achieving a more uniform doping ratio.

[0049] Through dual adjustment in horizontal and vertical directions, the system can more accurately control the sputtering area and proportion of different target materials, which is very important for the manufacture of high-precision thin films and functional coatings, especially in applications with high requirements on doping ratio and film uniformity.

[0050] This embodiment also includes a control system, which dynamically adjusts the shielding range of the baffle 32 on each shielding component 3 according to the preset doping ratio so that the doping ratio meets the requirements. The control system dynamically adjusts the shielding range of each group of baffles 32 according to the preset doping ratio requirements. The first target material 11 and the second target material 12 are arranged on the left and right. They are two different target materials. By changing the position of the baffle 32, the sputtering area ratio of the two materials on the substrate 22 is modified, thereby achieving precise doping of different materials. For example, at a certain moment, more sputtering of material A is required, and the system adjusts the position of the baffle 32 on the side of material A to a smaller shielding range to increase the sputtering area of ​​material A on the substrate 22; conversely, the sputtering amount of material B is reduced, and the control system adjusts the position of the baffle 32 according to real-time feedback so that the doping ratio meets the design requirements.

[0051] As some preferred embodiments, the shielding assembly 3 further includes a connecting rod 35, one end of which is fixedly connected to the baffle 32, and the other end of which is movable through the fixing frame 31, and each connecting rod 35 is respectively connected to a first driving device 33 and a second driving device 34. By introducing the connecting rod 35, the movement of the baffle 32 becomes more stable and controllable. The movable part of the connecting rod 35 can move smoothly in the fixing frame 31, avoiding the problem of structural instability or inaccurate movement that may be caused by directly connecting the baffle 32 to the driving device.

[0052] Each connecting rod 35 is connected to the first driving device 33 and the second driving device 34, so that the driving device can independently control the movement of the connecting rod 35, thereby driving the baffle 32 to adjust its position in different directions, thereby achieving precise shielding of the target material and precise control of the sputtering ratio.

[0053] In the above embodiment, the first driving device 33 and the second driving device 34 are driving elements for controlling the horizontal and vertical movements of the connecting rod 35. The first driving device 33 can be a motor that drives the connecting rod 35 to move horizontally through a gear rack, and the second driving device 34 can also be a motor plus a gear rack structure. In the actual working process, the second driving device 34 needs to drive the corresponding first driving device 33 and the connecting rod 35 to move up and down synchronously.

[0054] As some preferred embodiments, a plurality of mounting surfaces 210 are evenly arranged on the outer side of the drum 21, and a plurality of substrates 22 are arranged on the mounting surfaces 210 at intervals along the height direction. The drum 21 is a core component for support and rotation, and its function is to fix the substrate 22, and it rotates continuously during the coating process to ensure uniformity during the sputtering process. By evenly arranging a plurality of mounting surfaces 210 on the outer side of the drum 21, it is ensured that each substrate 22 can be evenly sputtered by the target material during the sputtering process. This improves the uniformity of the doping ratio, avoids some substrates 22 being affected too much or too little by the sputtering, and thus achieves a higher quality film.

[0055] Multiple substrates 22 are arranged in the height direction, and a certain interval is ensured between them. By arranging the substrates 22 at reasonable intervals, mutual shielding between the substrates 22 is avoided, and each substrate 22 is ensured to receive the sputtering target uniformly. Through the rotation of the drum 21, the substrates 22 will continuously pass in front of the target sputtering source, so that the surface of the substrate 22 can be evenly covered with the sputtering material, effectively reducing the gradient effect in the sputtering process, and making the film doping ratio more uniform.

[0056] The application scenario of the present invention is the coating process of dual-target magnetron sputtering. Compared with other magnetron sputtering methods, this method uses two target materials, where the two target materials can use different raw materials, thereby achieving the purpose of coating multi-component optical films.

[0057] In order to realize the precise sputtering control of dual-target materials, the present invention also discloses a dual-target co-plating magnetron sputtering doping ratio control method, which includes the following steps:

[0058] Step S1, setting the sputtering distribution characteristics of target material A and target material B. The sputtering particle distribution of each target material is described according to the Gaussian distribution function, in which the center of the target material is the peak value and the edge gradually decays, thereby defining the distribution width of the target material in the horizontal and vertical directions. The sputtering particle distribution functions of target material A and target material B on the substrate when they are not blocked are calculated, which are Y and B, respectively. A (x TA ,y TA ) and Y B (x TB ,y TB ),in,

[0059]

[0060] Where Y 0A , Y 0B is the maximum sputtering rate, which determines the sputtering intensity, exp is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, respectively. TA and TA represents the position coordinates of a point on the substrate surface of target A, x TB and TB Indicates the position coordinates of a point on the substrate surface of target B.

[0061] Through these formulas, the distribution of sputtered particles generated by each target on the substrate when unobstructed can be preliminarily calculated, which provides basic data for subsequent sputtering ratio adjustment.

[0062] S2. In order to realize the sputtering ratio control of target A and target B on the substrate, the occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows:

[0063]

[0064] Among them, x, y are the coordinates of the baffle. Specifically, it can be understood that the point where the sputtered particles hit the substrate corresponds to the coordinates on the baffle, and D is the vertical distance from the target to the baffle. By setting the occlusion function, when a point (x, y) is blocked, the sputtered particles emitted by the target will not be able to reach the corresponding position on the substrate, thereby reducing the sputtering density of the point.

[0065] Define the occlusion functions of target A and target B as M respectively. A (x TA ,y TA ) and M B (x TB ,y TB ) to adjust the effective sputtering area of ​​target A and B, thereby controlling the total sputtering amount of each; the introduction of the shielding function can make local adjustments on the target sputtering path to accurately control the total sputtering amount of target A and target B. The shielding function actually limits the distribution area of ​​the sputtered particles, thus having a direct impact on the doping ratio of the film. By adjusting the shielding position of the baffle, the distribution and density of the sputtered particles can be adjusted.

[0066] S3. Under the condition of target material shielding, the actual total sputtering amount Q of target material A and target material B on the substrate is calculated by integral solution. A and Q B , through the formula The coordinates x and y of the baffle in the occlusion function M(x, y, D) are iteratively optimized to determine the optimal baffle position and shape that meets the target ratio, where α is the ratio of substance A to substance B in the film, which is a preset value.

[0067] In practical applications, the total amount of sputtering of the target material is affected by the occlusion function. Therefore, the actual total amount of sputtering Q of target material A and target material B can be obtained by integral calculation. A and Q B The ratio of substance A to substance B in the film can be calculated using the formula α = QA / QB. If the ratio does not meet the preset target, the system will further adjust the occlusion function through iterative optimization.

[0068] The core of this process is to adjust the sputtering ratio of target materials A and B by repeatedly optimizing the position and shape of the baffle, so that the material ratio α of A and B in the final film reaches the target setting value. By adjusting the coordinates x and y of the baffle, the doping ratio of the film can be further accurately controlled to ensure that the sputtering ratio of the two substances meets the requirements.

[0069] S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​the target materials A and B is adjusted respectively, so as to accurately control the doping ratio of the thin film.

[0070] The present invention provides preliminary data for subsequent calculations by setting the sputtering distribution characteristics of target materials A and target materials B, ensures the controllability of the sputtering process, designs a shielding function, and uses the position of the baffle to adjust the effective sputtering area of ​​target materials A and target materials B to achieve regulation of the sputtering ratio. The actual total sputtering amount of target materials A and B is calculated by integration, and the material ratio of A to B in the film is accurately controlled through iterative optimization. The baffle shielding area is adjusted according to the optimization result, and the doping ratio of the film is accurately controlled to ensure that the material performance meets the requirements.

[0071] In this embodiment, the Gaussian distribution function in step S1 is obtained by experimentally measuring the specific sputtering amount of the target material, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using a nonlinear regression or fitting method. The sputtering distribution characteristics of the target material are determined by its width e and length d, which limit the spatial range of the sputtering particle distribution.

[0072] The actual sputtering distribution may be affected by many factors (such as target surface characteristics, sputtering angle, current, etc.). Therefore, simply relying on theoretical models may not fully reflect the actual process. By experimentally measuring the sputtering particle distribution data in different areas of the target surface, more accurate sputtering distribution information can be obtained. This data will serve as the basis for model fitting to ensure that the Gaussian distribution function used can truly reflect the physical phenomenon of the sputtering process. In the experiment, sensors or probes can be used to scan the target surface and record the sputtering particle density at different locations. These experimental data provide practical and reliable data support for the fitting of Gaussian distribution.

[0073] Gaussian distribution is a nonlinear function, so it is necessary to match the experimental data with the Gaussian distribution model through nonlinear regression or fitting methods. This can be optimized through methods such as least squares method and maximum likelihood estimation, so that the fitted Gaussian function can reflect the actual sputtering distribution as accurately as possible. Through fitting, the sputtering distribution characteristics of the target can be described by width e and length d. These parameters (e and d) limit the spatial distribution range of the sputtered particles, so that the particle concentration during the sputtering process can be controlled more accurately.

[0074] The sputtering distribution function obtained by experimental fitting not only describes the distribution intensity of the particles, but also determines the spatial range of the particle distribution through e and d. This spatial range limits the distribution of particle concentration on the substrate surface, which in turn affects the doping ratio and uniformity of the film. Controlling the distribution range of sputtered particles can affect the proportion of each component in the film at the microscopic level. In practical applications, the distribution of sputtered particles of the target material does not extend infinitely, but is within a limited area. By limiting the width and length of the Gaussian distribution, the uniformity of the sputtering process can be effectively adjusted to avoid excessive or insufficient deposition in certain areas, thereby improving the control accuracy of the film quality and doping ratio.

[0075] The experimentally obtained Gaussian distribution parameters (e and d) will directly affect the optimization of the shielding function M(x, y, D). By precisely controlling the distribution range of the sputtered particles, the position and shape of the baffle can be further adjusted to precisely control the effective sputtering area of ​​each target material and ultimately achieve the target doping ratio.

[0076] By introducing experimental measurement and nonlinear regression fitting, the actual sputtering particle distribution data is used to optimize the Gaussian distribution function, thereby accurately describing the sputtering distribution characteristics of the target material. In this way, the sputtering distribution of target A and target B can be more in line with the actual process and provide more accurate doping ratio control. This design not only improves the accuracy of sputtering control, but also optimizes the adjustability of the entire film doping ratio, ensuring the uniformity and consistency of the film quality.

[0077] As some preferred embodiments, the present invention discloses a method for calculating the total amount of sputtering of target A and target B after shielding, specifically, respectively:

[0078]

[0079] The above total sputtering amount is calculated by double integration of the sputtering distribution function of targets A and B. The integration area is limited to the physical size range of the target, e A and d A Respectively represent the width and length of target A, defining the physical size of target A, e B and d B represent the width and length of target B respectively.

[0080] The sputtering distribution of each target (Y A and Y B ) multiplied by the occlusion function (M A and M B ) to consider the occlusion effect. The role of the occlusion function is to affect the sputtering path from the target to the substrate. If a certain position is blocked, the sputtering amount will be reduced (that is, the occlusion function takes 0), otherwise the sputtering amount is normal (the occlusion function takes 1).

[0081] dx TA anddy TA are the differential elements of target A along the x-axis and y-axis directions, dx TB anddy TB are the differential elements of target B integrated along the x-axis and y-axis directions respectively.

[0082] ρ A and ρ BRespectively represent the vertical distance from target A and target B to the substrate. This term affects the propagation path length of the sputtered particles, and thus affects the intensity of sputtering to the substrate. When calculating, it is used as a constant in the formula to adjust the sputtering intensity.

[0083] Occlusion function M A (x TA ,y TA ,D) and M B (x TB ,y TB ,D) controls the intensity of sputtered particles at different positions on the substrate. Through the occlusion function, the influence of factors such as baffles and equipment layout on the sputtering distribution can be simulated, thereby adjusting the doping ratio.

[0084] By adjusting the physical size of the target (e A ,d A ,e B ,d B ) and the distance from the substrate (ρ A ,ρ B ), the sputtering intensity in different areas can be controlled, thereby achieving precise doping ratio control. The combination of these factors determines the proportion of material ultimately sputtered to each point on the substrate, which is an important basis for achieving co-plating control.

[0085] The total amount of sputtering of target A and target B under the influence of the shielding component is calculated by integration. By precisely adjusting the physical dimensions of the target (such as width e, length d) and the sputtering distribution function (Y A and Y B ), and according to the position of the target surface and the distance from the substrate to the target (ρ A and ρ B , this method can achieve precise control of the sputtering area. Ultimately, the formula can optimize the doping ratio to ensure that the sputtering amount in different areas meets the predetermined requirements, thereby achieving efficient and precise sputtering process control.

[0086] As some preferred implementation methods, in step S4, the position of the baffle in the shielding assembly is dynamically adjusted through the control system. In the x-direction, the horizontal movement of each baffle is controlled by the first driving device to adjust the shielding area of ​​the target surface in the x-direction. In the y-direction, the vertical movement of each baffle is controlled by the second driving device to adjust the shielding area of ​​the target surface in the y-direction. The position of each baffle is dynamically adjusted according to the sputtering distribution and shielding requirements of the target material to ensure that the sputtering amount in each area meets the doping ratio requirements, thereby achieving precise control of the sputtering area and optimizing the adjustment of the doping ratio.

[0087] Through this precise control, it can be ensured that the sputtering amount of the target in different areas meets the predetermined doping ratio requirements. Changes in the shielding area directly affect the sputtering distribution, thereby adjusting the required doping ratio. The function of the shielding component is to adjust the final film composition by dynamically changing the sputtering amount in each area. This method can not only optimize the doping ratio in real time, but also better cope with changes in actual operations. This dynamic adjustment method allows the adjustment of the shielding area to be more finely matched to the actual doping requirements, further improving the control accuracy during the sputtering process and ensuring the uniformity and consistency of the doping ratio.

[0088] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. Any modifications, equivalent substitutions, improvements, etc. made within the spirit and principles of the present invention should be included in the protection scope of the present invention.

Claims

1. A dual-target co-plating magnetron sputtering doping ratio control device, characterized in that: include: A target material assembly (1), wherein the target material assembly (1) comprises a first target material (11) and a second target material (12), wherein the first target material (11) and the second target material (12) are arranged side by side; A coating assembly (2) is located on one side of the target assembly (1), the coating assembly (2) comprising a rotating drum (21) and a plurality of substrates (22) evenly arranged on the outer wall of the rotating drum (21), the rotating drum (21) being vertically located at the center of the first target (11) and the second target (12); The shielding assembly (3) is located between the target assembly (1) and the coating assembly (2), and is symmetrically arranged relative to the central axis of the rotating drum (21). The shielding assembly (3) includes a fixed frame (31), a baffle (32) and a first driving device (33). A plurality of baffles (32) are arranged at intervals along the inner side height direction of the fixed frame (31). A plurality of first driving devices (33) are arranged on the fixed frame (31), and are respectively used to drive the corresponding baffles (32) to move in the horizontal direction, so as to adjust the position of the baffles (32) in the horizontal direction to shield the target.

2. The dual-target co-plating magnetron sputtering doping ratio control device according to claim 1, characterized in that: The shielding assembly (3) further comprises a second driving device (34). A plurality of second driving devices (34) are arranged on the fixing frame (31) and are respectively used to drive the corresponding baffle plates (32) to move in a vertical direction so as to adjust the position of the baffle plates (32) in the vertical direction to shield the target material.

3. The dual-target co-plating magnetron sputtering doping ratio control device according to claim 1 or 2, characterized in that: It also comprises a control system, which dynamically adjusts the shielding range of the baffle (32) on each shielding component (3) according to a preset doping ratio, so that the doping ratio meets the requirements.

4. The dual-target co-plating magnetron sputtering doping ratio control device according to claim 2, characterized in that: The shielding assembly (3) further comprises a connecting rod (35), one end of which is fixedly connected to the baffle (32) and the other end of which movably passes through the fixing frame (31), and each connecting rod (35) is respectively connected to a first driving device (33) and a second driving device (34).

5. The dual-target co-plating magnetron sputtering doping ratio control device according to claim 1, characterized in that: A plurality of mounting surfaces (210) are evenly arranged on the outer side surface of the rotating drum (21), and a plurality of base plates (22) are arranged on the mounting surface (210) at intervals along the height direction.

6. A method for controlling doping ratio of dual-target co-plating magnetron sputtering, which utilizes the dual-target co-plating magnetron sputtering doping ratio control device as claimed in any one of claims 3 to 5, characterized in that: The steps include: S1. Set the sputtering distribution characteristics of target A and target B. The sputtering particle distribution of each target is described according to the Gaussian distribution function. Calculate the sputtering particle distribution function of target A and target B on the substrate when they are not blocked, which are Y A (x TA ,y TA ) and Y B (x TB ,y TB ),in, Where Y 0A , Y 0B is the maximum sputtering rate, exp is the exponential operation, σ xA and σ yA are the standard deviations of the sputtering distribution of target A in the x and y directions, σ xB and σ yB are the standard deviations of the sputtering distribution of target B in the x and y directions, respectively. TA and TA represents the position coordinates of a point on the substrate surface of target A, x TB and TB Indicates the position coordinates of a certain point of target B on the substrate surface; S2. In order to realize the sputtering ratio control of target A and target B on the substrate, the occlusion function M(x, y, D) is designed. Its value depends on whether a certain point on the target surface is blocked. It is defined as follows: Where x, y are the coordinates of the baffle, and D is the vertical distance from the target to the baffle; Define the occlusion functions of target A and target B as M respectively. A (x TA ,y TA ) and M B (x TB ,y TB ), to adjust the effective sputtering area of ​​targets A and B, thereby controlling the total amount of sputtering of each; S3. Under the condition of target material shielding, the actual total sputtering amount Q of target material A and target material B on the substrate is calculated by integral solution. A and Q B , through the formula The coordinates x and y of the baffle in the occlusion function M(x, y, D) are iteratively optimized to determine the optimal baffle position and shape that meets the target ratio, where α is the ratio of substance A to substance B in the film, which is a preset value; S4. According to the calculation results, by adjusting the shielding area of ​​the baffle, the effective sputtering area of ​​the target materials A and B is adjusted respectively, so as to accurately control the doping ratio of the thin film.

7. The method for controlling doping ratio of dual-target co-plating magnetron sputtering according to claim 6, characterized in that: The Gaussian distribution function in step S1 is obtained by experimentally measuring the specific sputtering amount of the target material, recording the sputtering particle distribution data of different areas on the target surface, and fitting the experimental data using a nonlinear regression or fitting method. The sputtering distribution characteristics of the target material are determined by its width e and length d, which limit the spatial range of the sputtering particle distribution.

8. The method for controlling doping ratio of dual-target co-plating magnetron sputtering according to claim 6, characterized in that: The total amount of sputtering of target A and target B after shielding is: Among them, ρ A and ρ B They represent the vertical distances from target A and target B to the substrate, respectively, and are used as constants in the calculation. A and d A Respectively represent the width and length of target A, defining the physical size of target A, e B and d B Respectively represent the width and length of target B, dx TA anddy TA are the differential elements of target A along the x-axis and y-axis directions, dx TB anddy TB are the differential elements of target B integrated along the x-axis and y-axis directions respectively.

9. The method for controlling doping ratio of dual-target co-plating magnetron sputtering according to claim 6, characterized in that: In step S4, the position of the baffle in the shielding assembly is dynamically adjusted through the control system. In the x direction, the horizontal movement of each baffle is controlled by the first driving device to adjust the shielding area of ​​the target surface in the x direction. In the y direction, the vertical movement of each baffle is controlled by the second driving device to adjust the shielding area of ​​the target surface in the y direction. The position of each baffle is dynamically adjusted according to the sputtering distribution and shielding requirements of the target material to ensure that the sputtering amount in each area meets the doping ratio requirements, thereby achieving precise control of the sputtering area and optimizing the adjustment of the doping ratio.

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