An x-ray generating apparatus

Abstract

The application discloses an X-ray generating device. The device comprises a fixed copper block, a rotating rotor, a rotating part, a plurality of micro-nano structure anode targets, an electron gun and a control unit. The rotating rotor and the fixed copper block are coaxially arranged. A plurality of micro-nano structure anode targets are arranged on the rotating rotor in the axial direction, and the distance between the micro-nano structure anode targets and the axis of the rotating rotor is equal, which is a first distance. The fixed copper block is provided with a first channel in the axial direction, and the distance between the first channel and the axis of the fixed copper block is a second distance. The first distance and the second distance are equal. Each micro-nano structure anode target is in contact with the end surface of the fixed copper block. The emitting end of the electron gun is located on the same horizontal line as the first channel. The rotating part is connected with the axis of the rotating rotor to drive the rotating rotor to rotate along the axis. The control unit is connected with the rotating part and the electron gun respectively to control the rotation of the rotating part and the switching of the electron gun. The device has good performance, small volume and good heat dissipation.

Description

Technical Field

[0001] The present invention relates to the field of X-ray sources, and more particularly, to an X-ray generating device. Background Art

[0002] Currently, the main principle for generating X-rays is that an electron beam emitted by a cathode, after being accelerated at high voltage, bombards a metal target. The electron beam interacts with the target, converting its kinetic energy into heat and X-rays. With the advancement of science and technology and the growing needs of human society, higher requirements have been placed on the development of portable X-ray generators that can achieve miniaturization, microfocusing, and high throughput.

[0003] Conventional X-ray generators struggle to simultaneously achieve miniaturization, microfocusing, and high throughput. Microfocusing-focused X-ray generators often face heat dissipation issues, resulting in poor X-ray output performance and insufficient X-ray dose. Furthermore, conventional X-ray generators are bulky, making them difficult to meet the miniaturization requirements of portable devices.

[0004] The prior art discloses an X-ray generating device. This device comprises: an electron gun that emits an electron beam; a rotating anode unit having a target that receives the electron beam and generates X-rays, and configured to rotate the target; a magnetic lens having a coil configured to generate a magnetic force acting on the electron beam between the electron gun and the target; and a wall disposed between the target and the coil, facing the target. The wall is formed with an electron passage hole through which the electron beam passes and a flow path for the flow of a coolant. This device has a complex structure and is relatively large in size, and requires high electron beam focusing. Summary of the Invention

[0005] The present invention addresses the defects of the prior art X-ray generating devices, such as large size, poor performance and poor heat dissipation, and provides an X-ray generating device with good performance, small size and good heat dissipation.

[0006] The primary purpose of the present invention is to solve the above technical problems, and the technical solutions of the present invention are as follows:

[0007] An X-ray generating device, comprising: a fixed copper block, a rotating rotor, a rotating component, a plurality of micro-nanostructure anode targets, an electron gun, and a control unit;

[0008] The rotating rotor and the fixed copper block are coaxially arranged; a plurality of micro-nanostructure anode targets are axially arranged on the rotating rotor, and the plurality of micro-nanostructure anode targets are at equal distances from the axis of the rotating rotor, which are all a first distance;

[0009] The fixed copper block is provided with a first channel along the axial direction, the first channel is at a second distance from the axis of the fixed copper block, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets is in contact with an end face of the fixed copper block;

[0010] The emission end of the electron gun is located on the same horizontal line as the first channel;

[0011] The rotating component is connected to the axis of the rotating rotor, driving the rotating rotor to rotate along the axis;

[0012] The control unit is connected to the rotating component and the electron gun respectively, and is used to control the rotation of the rotating component and the switching of the electron gun.

[0013] Furthermore, the rotating components include: a motor, a coupling;

[0014] One end of the coupling is connected to the rotating shaft of the motor, and the other end of the coupling is connected to the axis of the rotating rotor; the control unit is connected to the control end of the motor.

[0015] Furthermore, the material of the rotating rotor is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

[0016] Furthermore, the micro-nanostructure anode target is connected to the rotating rotor through a tungsten needle.

[0017] Furthermore, the control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor;

[0018] The temperature sensor is mounted on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component;

[0019] Furthermore, the temperature monitoring module includes: a 32nd MOS transistor M32, a 33rd MOS transistor M33, a 34th MOS transistor M34, a 35th MOS transistor M35, a 36th MOS transistor M36, a 37th MOS transistor M37, an 11th resistor R11, a 12th resistor R12, a 13th resistor R13, a 14th resistor R14, a third Schmitt trigger I21, a fourth inverter I22, an operational amplifier I23, a first current source IBN, a second current source IBP, an eighth MOS capacitor C8, and a ninth MOS capacitor C9;

[0020] The other end of the eleventh resistor R11 is connected to one end of the twelfth resistor R12, the second end of the thirty-second MOS transistor M32, and the first end of the thirty-third MOS transistor M33. The other end of the twelfth resistor R12 is connected to one end of the thirteenth resistor R13, the second end of the thirty-fourth MOS transistor M34, and the first end of the thirty-fifth MOS transistor M35. The inverting input end of the operational amplifier I23 is connected to the first end of the thirty-second MOS transistor M32, the second end of the thirty-third MOS transistor M33, the first end of the thirty-fourth MOS transistor M34, and the second end of the thirty-fifth MOS transistor M35. The other end of the fourteenth resistor R14 is connected to one end of the eighth MOS capacitor C8 and the non-inverting input end of the operational amplifier I23. The output end of the operational amplifier I23 is connected to the gate end of the thirty-sixth MOS transistor M36. , the gate terminal of the thirty-seventh MOS transistor M37 is connected, the other end of the second current source IBP is connected to the first end of the thirty-sixth MOS transistor M36, the second end of the thirty-seventh MOS transistor M37 is connected to one end of the first current source IBN, the second end of the thirty-sixth MOS transistor M36 is connected to the first end of the thirty-seventh MOS transistor M37 and one end of the third Schmitt trigger I21, the other end of the third Schmitt trigger I21 is connected to one end of the ninth MOS capacitor C9, the gate terminal of the thirty-third MOS transistor M33, the gate terminal of the thirty-fourth MOS transistor M34, and one end of the fourth inverter I22, the other end of the thirteenth resistor R13, the other end of the first current source IBN, the other end of the eighth MOS capacitor C8, and the other end of the ninth MOS capacitor C9 are grounded;

[0021] The temperature sensor is connected to one end of the eleventh resistor R11. The other end of the fourth inverter I22 is connected to the gate end of the thirty-second MOS transistor M32, the gate end of the thirty-fifth MOS transistor M35, and the input end of the clock unit. The output end of the bandgap reference source unit is connected to one end of the fourteenth resistor R14.

[0022] Furthermore, the clock unit includes: a ring oscillator and a signal control module;

[0023] The signal control module includes: a D flip-flop I7, an eleventh inverter I8, a fifth inverter I9, a sixth inverter I10, a seventh inverter I11, an eighth inverter I12, a NOR gate I13, a two-input NAND gate I14, a first buffer I15, a second buffer I16, a first three-input NAND gate I17, a second three-input NAND gate I18, a ninth inverter I19, and a tenth inverter I20;

[0024] The other end of the eleventh inverter I8 is connected to the first input end of the NOR gate I13 and the second input end of the two-input NAND gate I14. The output end of the NOR gate I13 is connected to one end of the first buffer I15. The other end of the first buffer I15 is connected to one end of the fifth inverter I9. The other end of the fifth inverter I9 is ​​connected to the second input end of the D flip-flop I7, one end of the tenth inverter I20, and the first input end of the two-input NAND gate I14. The output end of the two-input NAND gate I14 is connected to one end of the second buffer I16. The other end of the second buffer I16 is connected to one end of the sixth inverter I10. The first and second input terminals of the D flip-flop I17 are connected to the first input terminal of the D flip-flop I17, the second output terminal of the D flip-flop I7 is connected to the first input terminal of the D flip-flop I17, the output terminal of the first three-input NAND gate I17 is connected to one terminal of the seventh inverter I11, the output terminal of the second three-input NAND gate I18 is connected to one terminal of the eighth inverter I12, and the other terminal of the ninth inverter I19 is connected to the first input terminal of the D flip-flop I7;

[0025] An output end of the ring oscillator is connected to one end of an eleventh inverter I8, one end of a ninth inverter I19 is connected to a first input end of a second three-input NOT gate I18 and another end of a fourth inverter I22, another end of a seventh inverter I11 is connected to a rotating component, another end of an eighth inverter I12 is connected to an electron gun, and an output end of the bandgap reference source unit is connected to a third input end of a D flip-flop I7, a second input end of a first three-input NAND gate I17, and a second input end of a second three-input NOT gate I18.

[0026] The ring oscillator includes: a first current source IBN, a twenty-sixth MOS transistor M26, a twenty-seventh MOS transistor M27, a twenty-eighth MOS transistor M28, a twenty-ninth MOS transistor M29, a thirtieth MOS transistor M30, a thirty-first MOS transistor M31, a second current source IBP, a level converter I3, a second Schmitt trigger I4, a second inverter I5, a third inverter I6, a second current source IBP, a fifth MOS capacitor C5, a sixth MOS capacitor C6, and a seventh MOS capacitor C7;

[0027] The other end of the second current source IBP is connected to the first end of the twenty-sixth MOS transistor M26, the first end of the twenty-seventh MOS transistor M27, and the first end of the twenty-eighth MOS transistor M28. The second end of the twenty-sixth MOS transistor M26 is connected to the gate end of the twenty-seventh MOS transistor M27, the first end of the twenty-ninth MOS transistor M29, the gate end of the thirtieth MOS transistor M30, and one end of the fifth MOS capacitor C5. The second end of the twenty-ninth MOS transistor M29, the second end of the thirtieth MOS transistor M30, and the second end of the thirty-first MOS transistor M31 are connected to one end of the first current source IBN. The second end of the twenty-seventh MOS transistor M27 is connected to the gate end of the twenty-eighth MOS transistor M28, the first end of the thirtieth MOS transistor M30, and the gate end of the thirty-first MOS transistor M31. A gate terminal of the S transistor M31 is connected to one end of the sixth MOS transistor C6. A second end of the twenty-eighth MOS transistor M28 is connected to the first end of the thirty-first MOS transistor M31, one end of the seventh MOS capacitor C7, and one end of the second Schmitt trigger I4. The other end of the first current source IBN, the other end of the fifth MOS capacitor C5, the other end of the sixth MOS capacitor C6, and the other end of the seventh MOS capacitor C7 are grounded. The other end of the second Schmitt trigger I4 is connected to one end of the second inverter I5. The other end of the second inverter I5 is connected to the gate terminal of the twenty-sixth MOS transistor M26, the gate terminal of the twenty-ninth MOS transistor M29, and one end of the third inverter I6. The other end of the third inverter I6 is connected to the second input terminal of the level shifter I3.

[0028] The output end of the power module is connected to one end of the second current source IBP and the first input end of the level converter I3, the power supply is connected to the third input end of the level converter I3, and the output end of the level converter I3 is connected to one end of the eleventh inverter I8.

[0029] Furthermore, the power module includes: a nineteenth MOS transistor M19, a twentieth MOS transistor M20, a twenty-first MOS transistor M21, a twenty-second MOS transistor M22, a twenty-third MOS transistor M23, a twenty-fourth MOS transistor M24, a twenty-fifth MOS transistor M25, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a first current source IBN, a third MOS capacitor C3, and a fourth MOS capacitor C4;

[0030] The power supply is connected to the second end of the twenty-third MOS transistor M23, the first end of the twenty-fourth MOS transistor M24, and the first end of the twenty-fifth MOS transistor M25. The gate end of the twenty-third MOS transistor M23 is connected to the gate end of the twenty-fourth MOS transistor M24. The second end of the twenty-second MOS transistor M22 is connected to one end of the third MOS capacitor C3, the gate end of the twenty-fifth MOS transistor M25, and the second end of the twenty-fourth MOS transistor M24. The other end of the third MOS capacitor C3 is connected to one end of the tenth resistor R10. The other end of the fourth MOS capacitor C4 is grounded. The eighth resistor R8 is connected to the gate end of the eighth resistor R8. The other end is connected to one end of the ninth resistor R9 and the gate end of the nineteenth MOS transistor M19, the first end of the twenty-first MOS transistor M21 is connected to the first end of the twenty-third MOS transistor M23, the first end of the nineteenth MOS transistor M19 is connected to the second end of the twenty-first MOS transistor M21, the second end of the twentieth MOS transistor M20 is connected to the first end of the twenty-second MOS transistor M22, the first end of the nineteenth MOS transistor M19 is connected to the second end of the twentieth MOS transistor M20 and one end of the first current source IBN, and the other end of the first current source IBN and the other end of the ninth resistor R9 are grounded;

[0031] The other end of the tenth resistor R10 is connected to the second end of the twenty-fifth MOS transistor M25, one end of the eighth resistor R8, one end of the fourth MOS capacitor C4, one end of the second current source IBP, and the first input end of the level converter I3. The output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS transistor M21 and the gate end of the twenty-second MOS transistor M22. The gate end of the twentieth MOS transistor M20 is connected to the output end of the bandgap reference source unit.

[0032] Furthermore, the bandgap reference source unit includes: a bandgap reference source module, a voltage buffer, and a delay device;

[0033] The bandgap reference source module includes: a seventeenth MOS transistor M17, an eighteenth MOS transistor M18, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first PNP transistor Q1, a second PNP transistor Q2, and a low-power operational amplifier I24;

[0034] The power supply is connected to a first end of the eighteenth MOS transistor M18, a second end of the eighteenth MOS transistor M18 is connected to a first end of the seventeenth MOS transistor M17, a gate end of the seventeenth MOS transistor M17 is connected to an output end of a low-power operational amplifier I24, the other end of the fourth resistor R4 is connected to one end of the second resistor R2 and one end of the third resistor R3, a non-inverting input end of the low-power operational amplifier I24 is connected to the other end of the third resistor R3 and the emitter of the first PNP transistor Q1, an inverting input end of the low-power operational amplifier I24 is connected to the other end of the second resistor R2 and one end of the first resistor R1, the other end of the first resistor R1 is connected to the emitter of the second PNP transistor Q2, the base of the first PNP transistor Q1, the collector of the first PNP transistor Q1, the base of the second PNP transistor Q2, the collector of the second PNP transistor Q2, and the other end of the seventh resistor R7 are grounded;

[0035] The other end of the sixth resistor R6 is connected to one end of the seventh resistor R7 and one end of the fourteenth resistor R14. The other end of the fifth resistor R5 is connected to one end of the sixth resistor R6 and the gate end of the twentieth MOS transistor M20. The input end of the voltage buffer and the input end of the delay device are connected to the second end of the seventeenth MOS transistor M17, one end of the fourth resistor R4, and one end of the fifth resistor R5. The output end of the voltage buffer is connected to the gate end of the twenty-first MOS transistor M21. The output end of the bias circuit unit is connected to the gate end of the eighteenth MOS transistor M18. The output end of the delay device is connected to the third input end of the D flip-flop I7.

[0036] Furthermore, the bias circuit unit includes: a tenth MOS transistor M10, an eleventh MOS transistor M11, a twelfth MOS transistor M12, a thirteenth MOS transistor M13, a fourteenth MOS transistor M14, a fifteenth MOS transistor M15, a sixteenth MOS transistor M16, a second MOS capacitor C2, a first Schmitt trigger I1, and a first inverter I2;

[0037] The power supply is connected to the second end of the tenth MOS transistor M10 and the first end of the eleventh MOS transistor M11. The gate end of the tenth MOS transistor M10 is connected to the gate end of the eleventh MOS transistor M11, the first end of the tenth MOS transistor M10, and the second end of the twelfth MOS transistor M12. The gate end of the twelfth MOS transistor M12 is connected to the first end of the twelfth MOS transistor M12 and the second end of the thirteenth MOS transistor M13. The gate end of the thirteenth MOS transistor M13 is connected to the gate end of the fourteenth MOS transistor M14 and the gate end of the sixteenth MOS transistor M16. The gate end of the eleventh MOS transistor M11 is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS transistor M14, one end of the second MOS capacitor C2, the second end of the fifteenth MOS transistor M15, and one end of the first Schmitt trigger I1; the first end of the fifteenth MOS transistor M15 is connected to the first end of the sixteenth MOS transistor M16; the gate end of the fifteenth MOS transistor M15 is connected to the other end of the first Schmitt trigger I1 and one end of the first inverter I2; the first end of the thirteenth MOS transistor M13, the second end of the fourteenth MOS transistor M14, the other end of the second MOS capacitor C2, and the second end of the sixteenth MOS transistor M16 are grounded;

[0038] The other end of the first inverter I2 is connected to the gate end of the eighteenth MOS transistor M18.

[0039] Compared with the prior art, the present invention has the following beneficial effects:

[0040] The X-ray generating device of the present invention includes: a fixed copper block, a rotating rotor, a rotating component, a plurality of micro-nanostructure anode targets, an electron gun, and a control unit; the rotating rotor and the fixed copper block are coaxially arranged; a plurality of micro-nanostructure anode targets are axially arranged on the rotating rotor, and the plurality of micro-nanostructure anode targets are equidistant from the axis of the rotating rotor, which are all at a first distance; a first channel is axially arranged on the fixed copper block, and the distance between the first channel and the axis of the fixed copper block is a second distance, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets contacts the end face of the fixed copper block; the emission end of the electron gun and the first channel are located on the same horizontal line; the rotating component is connected to the axis of the rotating rotor to drive the rotating rotor to rotate along the axis; the control unit is respectively connected to the rotating component and the electron gun, and is used to control the rotation of the rotating component and the switching of the electron gun, thereby improving the heat dissipation capacity of the device, reducing the size of the device, and improving the overall performance. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 This is a structural diagram of an X-ray generating device provided in Example 1.

[0042] Figure 2 This is a front view of an X-ray generating device provided in Example 1.

[0043] Figure 3 This is a front view of an X-ray generating device provided in Example 1.

[0044] Figure 4 This is a radial cross-sectional view of an X-ray generating device provided in Example 1.

[0045] Figure 5 This is an axial cross-sectional view of an X-ray generating device provided in Example 1.

[0046] Figure 6 This is a structural diagram of the control unit provided in Example 1.

[0047] Figure 7 This is a circuit diagram of the temperature monitoring module provided in Example 1.

[0048] Figure 8 This is a circuit diagram of the signal control module provided in Example 1.

[0049] Figure 9 This is a circuit diagram of the ring oscillator provided in Example 1.

[0050] Figure 10 This is a circuit diagram of the power module provided in Example 1.

[0051] Figure 11 This is a circuit diagram of the bandgap reference source module provided in Example 1.

[0052] Figure 12 This is a circuit diagram of the bias circuit unit provided in Example 1.

[0053] Figure 13 This is a circuit diagram of the current source provided in Example 1.

[0054] Figure 14 This is a structural diagram of a miniaturized X-ray generating device provided in Example 2. DETAILED DESCRIPTION

[0055] The accompanying drawings are for illustrative purposes only and are not to be construed as limiting this patent;

[0056] In order to better illustrate this embodiment, some parts in the drawings may be omitted, enlarged, or reduced, and do not represent the actual product size;

[0057] It is understandable to those skilled in the art that some well-known structures and descriptions thereof may be omitted in the drawings.

[0058] The technical solution of the present invention is further described below with reference to the accompanying drawings and embodiments.

[0059] Example 1

[0060] like Figure 1、 Figure 2 As shown, an X-ray generating device includes: a fixed copper block 12, a rotating rotor 15, a rotating component, a plurality of micro-nanostructure anode targets 16, an electron gun 11, and a control unit;

[0061] The rotating rotor 15 and the fixed copper block 12 are coaxially arranged; a plurality of micro-nanostructure anode targets 16 are axially arranged on the rotating rotor 15, and the plurality of micro-nanostructure anode targets 16 are at the same distance from the axis of the rotating rotor 15, which is a first distance;

[0062] The fixed copper block 12 is provided with a first channel along the axial direction, the first channel is at a second distance from the axis of the fixed copper block 12, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets 16 is in contact with the end surface of the fixed copper block 12;

[0063] The emission end of the electron gun 11 is located on the same horizontal line as the first channel;

[0064] The rotating component is connected to the axis of the rotating rotor 15, driving the rotating rotor 15 to rotate along the axis;

[0065] The control unit is connected to the rotating component and the electron gun 11 respectively, and is used to control the rotation of the rotating component and the switching of the electron gun 11.

[0066] It should be noted that the control unit is used to adjust the period of generating the control signal and adjust the working state of the X-ray tube based on parameters such as the required electron beam density and electron beam voltage.

[0067] Furthermore, the rotating components include: a motor 13, a coupling 14;

[0068] One end of the coupling 14 is connected to the rotating shaft of the motor 13 , and the other end of the coupling 14 is connected to the axis of the rotating rotor 15 ; the control unit is connected to the control end of the motor 13 .

[0069] In a specific embodiment, Figure 3 As shown, the fixed copper block 12 is a solid entity except for the first channel, and no other channels are provided.

[0070] In a specific embodiment, Figure 4 、 Figure 5 As shown, the fixed copper block 12 is provided with a second channel, and the other end of the coupling 14 passes through the second channel and is connected to the axis of the rotating rotor 15.

[0071] Furthermore, the material of the rotating rotor 15 is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target 16 is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

[0072] It should be noted that the micro-nanostructured anode target 16 is a transmissive microstructured target material. Its structural shapes include, but are not limited to, cylindrical, prismatic, conical, pyramidal, or combinations thereof. It is used to enhance X-ray microfocusing. The rotation of the rotatable rotor enhances the target's heat dissipation capacity, thereby increasing both X-ray dose and brightness. The micro-nanostructured anode target can adopt a variety of geometric shapes; its characteristic dimensions can be flexibly designed within a range of 1 nanometer to 100 microns, facilitating optimization for different application scenarios. Its structural parameters can be tailored to achieve an optimal balance between microfocusing, brightness, dose, and heat dissipation of the generated radiation, depending on specific application requirements.

[0073] It should be noted that the micro-nanostructured anode target 16, combined with the micron-scale first channel, precisely guides the electron beam, significantly reducing the focus requirements of the electron beam. Consequently, the complex focusing mechanism found in traditional X-ray tubes can be eliminated, retaining only the basic electron emission function. This significantly reduces both the size of the electron gun and system power consumption. The target material is micron-sized, significantly reducing the space required for the target while improving output performance.

[0074] In a specific embodiment, the characteristic dimensions of the micro-nanostructure anode target 16 are in the range of 1 nanometer to 100 micrometers, including but not limited to its bottom surface characteristic dimensions and height dimensions, for comprehensive optimization of X-ray microfocusing, brightness, dose and heat dissipation capabilities.

[0075] It should be noted that the rotating rotor 15 is made of a high temperature resistant material, and the micro-nanostructure anode target 16 is made of an X-ray emitting material.

[0076] Furthermore, the micro-nanostructure anode target 16 is connected to the rotating rotor 15 via a tungsten needle 17 .

[0077] Furthermore, if Figure 6 As shown, the control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor;

[0078] The temperature sensor is mounted on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component;

[0079] It should be noted that the control unit controls the rotation of the rotatable rotor and the switching cycle of the electron gun through an integrated circuit; monitors the target material temperature, and triggers the over-temperature protection function when the temperature exceeds a preset threshold; and adjusts the speed of the rotatable rotor and the optimal timing of the electron beam switch according to parameters such as the electron beam density and electron beam voltage.

[0080] It should be noted that chips are used to replace traditional discrete components, and miniaturized high-voltage discrete components are used for the high-voltage parts that the chips cannot carry, thus realizing the overall miniaturization of the control circuit and the boost system.

[0081] Furthermore, if Figure 7 As shown, the temperature monitoring module includes: a 32nd MOS transistor M32, a 33rd MOS transistor M33, a 34th MOS transistor M34, a 35th MOS transistor M35, a 36th MOS transistor M36, a 37th MOS transistor M37, an 11th resistor R11, a 12th resistor R12, a 13th resistor R13, a 14th resistor R14, a third Schmitt trigger I21, a fourth inverter I22, an operational amplifier I23, a first current source IBN, a second current source IBP, an eighth MOS capacitor C8, and a ninth MOS capacitor C9;

[0082] The other end of the eleventh resistor R11 is connected to one end of the twelfth resistor R12, the second end of the thirty-second MOS transistor M32, and the first end of the thirty-third MOS transistor M33. The other end of the twelfth resistor R12 is connected to one end of the thirteenth resistor R13, the second end of the thirty-fourth MOS transistor M34, and the first end of the thirty-fifth MOS transistor M35. The inverting input end of the operational amplifier I23 is connected to the first end of the thirty-second MOS transistor M32, the second end of the thirty-third MOS transistor M33, the first end of the thirty-fourth MOS transistor M34, and the second end of the thirty-fifth MOS transistor M35. The other end of the fourteenth resistor R14 is connected to one end of the eighth MOS capacitor C8 and the non-inverting input end of the operational amplifier I23. The output end of the operational amplifier I23 is connected to the gate end of the thirty-sixth MOS transistor M36. , the gate terminal of the thirty-seventh MOS transistor M37 is connected, the other end of the second current source IBP is connected to the first end of the thirty-sixth MOS transistor M36, the second end of the thirty-seventh MOS transistor M37 is connected to one end of the first current source IBN, the second end of the thirty-sixth MOS transistor M36 is connected to the first end of the thirty-seventh MOS transistor M37 and one end of the third Schmitt trigger I21, the other end of the third Schmitt trigger I21 is connected to one end of the ninth MOS capacitor C9, the gate terminal of the thirty-third MOS transistor M33, the gate terminal of the thirty-fourth MOS transistor M34, and one end of the fourth inverter I22, the other end of the thirteenth resistor R13, the other end of the first current source IBN, the other end of the eighth MOS capacitor C8, and the other end of the ninth MOS capacitor C9 are grounded;

[0083] The temperature sensor is connected to one end of the eleventh resistor R11. The other end of the fourth inverter I22 is connected to the gate end of the thirty-second MOS transistor M32, the gate end of the thirty-fifth MOS transistor M35, and the input end of the clock unit. The output end of the bandgap reference source unit is connected to one end of the fourteenth resistor R14.

[0084] It should be noted that the 36th and 37th MOS transistors M36 and M37, the first current source IBN, the second current source IBP, and the third Schmitt trigger I21 form a hysteresis comparator, which is used to prevent the micro-nanostructure anode target 16 from overheating and effectively reduce interference caused by power supply fluctuations. This module is designed for low power consumption and high precision. Power consumption and precision are optimized by setting the ratio and size of the eleventh resistor R11, the twelfth resistor R12, and the thirteenth resistor R13, as well as the operational amplifier I23.

[0085] In one specific embodiment, the temperature of the molybdenum target 16 is difficult to monitor directly due to its small size and continuous rotation. Thermal conduction calculations show that when the molybdenum target temperature is 2000K, the temperature of the molybdenum rotor 15 is approximately 510K. Therefore, the temperature threshold is set to 510K, corresponding to a voltage signal of 4.3V; the recovery threshold is set to 480K, corresponding to a voltage signal of 4V. Simulation results show that the hysteresis window accuracy reaches ±0.025V (±2.5K) and the quiescent current is 5μA, meeting the reliability and low power requirements of the X-ray tube. When the voltage is below 4.3V (corresponding to 510K), the comparator outputs a high level and the system operates normally. When the voltage exceeds 4.3V, the comparator flips to a low level, and the output signal OUT2 flips, entering the signal control module to shut down the electron beam and target rotation switch. When the voltage drops to 4V (480K), the comparator returns to a high level and the system resumes operation, effectively achieving stable temperature control.

[0086] It should be noted that the temperature monitoring module is used to monitor the state of the target material.

[0087] Furthermore, the clock unit includes: a ring oscillator and a signal control module;

[0088] like Figure 8 As shown, the signal control module includes: a D flip-flop I7, an eleventh inverter I8, a fifth inverter I9, a sixth inverter I10, a seventh inverter I11, an eighth inverter I12, a NOR gate I13, a two-input NAND gate I14, a first buffer I15, a second buffer I16, a first three-input NAND gate I17, a second three-input NAND gate I18, a ninth inverter I19, and a tenth inverter I20;

[0089] The other end of the eleventh inverter I8 is connected to the first input end of the NOR gate I13 and the second input end of the two-input NAND gate I14. The output end of the NOR gate I13 is connected to one end of the first buffer I15. The other end of the first buffer I15 is connected to one end of the fifth inverter I9. The other end of the fifth inverter I9 is ​​connected to the second input end of the D flip-flop I7, one end of the tenth inverter I20, and the first input end of the two-input NAND gate I14. The output end of the two-input NAND gate I14 is connected to one end of the second buffer I16. The other end of the second buffer I16 is connected to one end of the sixth inverter I10. The first and second input terminals of the D flip-flop I17 are connected to the first input terminal of the D flip-flop I17, the second output terminal of the D flip-flop I7 is connected to the first input terminal of the D flip-flop I17, the output terminal of the first three-input NAND gate I17 is connected to one terminal of the seventh inverter I11, the output terminal of the second three-input NAND gate I18 is connected to one terminal of the eighth inverter I12, and the other terminal of the ninth inverter I19 is connected to the first input terminal of the D flip-flop I7;

[0090] An output end of the ring oscillator is connected to one end of an eleventh inverter I8, one end of a ninth inverter I19 is connected to a first input end of a second three-input NOT gate I18 and another end of a fourth inverter I22, another end of a seventh inverter I11 is connected to a rotating component, another end of an eighth inverter I12 is connected to an electron gun, and an output end of the bandgap reference source unit is connected to a third input end of a D flip-flop I7, a second input end of a first three-input NAND gate I17, and a second input end of a second three-input NOT gate I18.

[0091] It should be noted that the signal control module generates two non-overlapping control signals, which are used for target rotation control and electron beam switching respectively, ensuring that the electron beam is turned on only after the target rotation is completed. To achieve the protection function, the module introduces the output EN_T of the hysteresis comparator. When EN_T becomes 0 due to over-temperature protection, EN_TARGET will flip to 0 after completing the current pulse cycle to ensure that the target rotation cycle is complete. The control of the electron gun 11 is achieved by turning it on and off immediately without using a trigger. The module design meets the requirements of low power consumption, precise frequency and stable control, and the accuracy of the control logic of EN_TARGET and EN_ELECTRON_BEAM under over-temperature protection has been verified through simulation.

[0092] like Figure 9As shown, the ring oscillator includes: a first current source IBN, a twenty-sixth MOS transistor M26, a twenty-seventh MOS transistor M27, a twenty-eighth MOS transistor M28, a twenty-ninth MOS transistor M29, a thirtieth MOS transistor M30, a thirty-first MOS transistor M31, a second current source IBP, a level converter I3, a second Schmitt trigger I4, a second inverter I5, a third inverter I6, a second current source IBP, a fifth MOS capacitor C5, a sixth MOS capacitor C6, and a seventh MOS capacitor C7;

[0093] The other end of the second current source IBP is connected to the first end of the twenty-sixth MOS transistor M26, the first end of the twenty-seventh MOS transistor M27, and the first end of the twenty-eighth MOS transistor M28. The second end of the twenty-sixth MOS transistor M26 is connected to the gate end of the twenty-seventh MOS transistor M27, the first end of the twenty-ninth MOS transistor M29, the gate end of the thirtieth MOS transistor M30, and one end of the fifth MOS capacitor C5. The second end of the twenty-ninth MOS transistor M29, the second end of the thirtieth MOS transistor M30, and the second end of the thirty-first MOS transistor M31 are connected to one end of the first current source IBN. The second end of the twenty-seventh MOS transistor M27 is connected to the gate end of the twenty-eighth MOS transistor M28, the first end of the thirtieth MOS transistor M30, and the gate end of the thirty-first MOS transistor M31. A gate terminal of the S transistor M31 is connected to one end of the sixth MOS transistor C6. A second end of the twenty-eighth MOS transistor M28 is connected to the first end of the thirty-first MOS transistor M31, one end of the seventh MOS capacitor C7, and one end of the second Schmitt trigger I4. The other end of the first current source IBN, the other end of the fifth MOS capacitor C5, the other end of the sixth MOS capacitor C6, and the other end of the seventh MOS capacitor C7 are grounded. The other end of the second Schmitt trigger I4 is connected to one end of the second inverter I5. The other end of the second inverter I5 is connected to the gate terminal of the twenty-sixth MOS transistor M26, the gate terminal of the twenty-ninth MOS transistor M29, and one end of the third inverter I6. The other end of the third inverter I6 is connected to the second input terminal of the level shifter I3.

[0094] The output end of the power module is connected to one end of the second current source IBP and the first input end of the level converter I3, the power supply is connected to the third input end of the level converter I3, and the output end of the level converter I3 is connected to one end of the eleventh inverter I8.

[0095] It should be noted that the 26th, 27th, and 28th MOS transistors M26, M27, and M28 are PMOS transistors, while the 29th, 30th, and 31st MOS transistors M29, M30, and M31 are NMOS transistors. Three cascaded inverters with bias currents utilize IBN and IBP current sources to charge and discharge capacitors C1 and C2, controlling oscillation frequency stability and reducing power consumption. Because power supply fluctuations significantly impact the output frequency of the ring oscillator, the ring oscillator uses a 1.8V power supply from the power module to improve voltage stability. Finally, the oscillator output signal is converted to VCC via level converter I3 to meet the requirements of the signal control module. Simulations show that when the current source current is 100nA, the oscillator's static power consumption is only approximately 300nA. The generated periodic signal frequency is approximately 4.88kHz to 5.586kHz, meeting design requirements. The instantaneous flip current is controlled at 236.524μA, maintaining good power consumption and frequency stability.

[0096] It should be noted that the clock unit is used to generate clock signals and control signals.

[0097] Furthermore, if Figure 10 As shown, the power module includes: a nineteenth MOS transistor M19, a twentieth MOS transistor M20, a twenty-first MOS transistor M21, a twenty-second MOS transistor M22, a twenty-third MOS transistor M23, a twenty-fourth MOS transistor M24, a twenty-fifth MOS transistor M25, an eighth resistor R8, a ninth resistor R9, a tenth resistor R10, a first current source IBN, a third MOS capacitor C3, and a fourth MOS capacitor C4;

[0098] The power supply is connected to the second end of the twenty-third MOS transistor M23, the first end of the twenty-fourth MOS transistor M24, and the first end of the twenty-fifth MOS transistor M25. The gate end of the twenty-third MOS transistor M23 is connected to the gate end of the twenty-fourth MOS transistor M24. The second end of the twenty-second MOS transistor M22 is connected to one end of the third MOS capacitor C3, the gate end of the twenty-fifth MOS transistor M25, and the second end of the twenty-fourth MOS transistor M24. The other end of the third MOS capacitor C3 is connected to one end of the tenth resistor R10. The other end of the fourth MOS capacitor C4 is grounded. The eighth resistor R8 is connected to the gate end of the eighth resistor R8. The other end is connected to one end of the ninth resistor R9 and the gate end of the nineteenth MOS transistor M19, the first end of the twenty-first MOS transistor M21 is connected to the first end of the twenty-third MOS transistor M23, the first end of the nineteenth MOS transistor M19 is connected to the second end of the twenty-first MOS transistor M21, the second end of the twentieth MOS transistor M20 is connected to the first end of the twenty-second MOS transistor M22, the first end of the nineteenth MOS transistor M19 is connected to the second end of the twentieth MOS transistor M20 and one end of the first current source IBN, and the other end of the first current source IBN and the other end of the ninth resistor R9 are grounded;

[0099] The other end of the tenth resistor R10 is connected to the second end of the twenty-fifth MOS transistor M25, one end of the eighth resistor R8, one end of the fourth MOS capacitor C4, one end of the second current source IBP, and the first input end of the level converter I3. The output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS transistor M21 and the gate end of the twenty-second MOS transistor M22. The gate end of the twentieth MOS transistor M20 is connected to the output end of the bandgap reference source unit.

[0100] It should be noted that the 19th MOS transistor M19, the 20th MOS transistor M20, the 21st MOS transistor M21, and the 22nd MOS transistor M22 are NMOS transistors, while the 23rd MOS transistor M23, the 24th MOS transistor M24, and the 25th MOS transistor M25 are PMOS transistors. The output voltage VOUT is 1.8V with an accuracy within ±1%, meeting design requirements. The response time is 0.6μs, adapting to step changes in load current. The total power consumption is 8μA, meeting low power requirements. The loop gain and phase margin both meet design requirements, with a PM of 68.57°, which further improves with increasing load. The power supply rejection ratio is greater than 60dB at a frequency of 1kHz, effectively suppressing input ripple. The design meets requirements for output accuracy, load response, power consumption, and power supply rejection.

[0101] It should be noted that the power module is used to provide a stable voltage for the ring oscillator.

[0102] Furthermore, if Figure 11As shown, the bandgap reference source unit includes: a bandgap reference source module, a voltage buffer, and a delay device;

[0103] The bandgap reference source module includes: a seventeenth MOS transistor M17, an eighteenth MOS transistor M18, a first resistor R1, a second resistor R2, a third resistor R3, a fourth resistor R4, a fifth resistor R5, a sixth resistor R6, a seventh resistor R7, a first PNP transistor Q1, a second PNP transistor Q2, and a low-power operational amplifier I24;

[0104] The power supply is connected to a first end of the eighteenth MOS transistor M18, a second end of the eighteenth MOS transistor M18 is connected to a first end of the seventeenth MOS transistor M17, a gate end of the seventeenth MOS transistor M17 is connected to an output end of a low-power operational amplifier I24, the other end of the fourth resistor R4 is connected to one end of the second resistor R2 and one end of the third resistor R3, a non-inverting input end of the low-power operational amplifier I24 is connected to the other end of the third resistor R3 and the emitter of the first PNP transistor Q1, an inverting input end of the low-power operational amplifier I24 is connected to the other end of the second resistor R2 and one end of the first resistor R1, the other end of the first resistor R1 is connected to the emitter of the second PNP transistor Q2, the base of the first PNP transistor Q1, the collector of the first PNP transistor Q1, the base of the second PNP transistor Q2, the collector of the second PNP transistor Q2, and the other end of the seventh resistor R7 are grounded;

[0105] The other end of the sixth resistor R6 is connected to one end of the seventh resistor R7 and one end of the fourteenth resistor R14. The other end of the fifth resistor R5 is connected to one end of the sixth resistor R6 and the gate end of the twentieth MOS transistor M20. The input end of the voltage buffer and the input end of the delay device are connected to the second end of the seventeenth MOS transistor M17, one end of the fourth resistor R4, and one end of the fifth resistor R5. The output end of the voltage buffer is connected to the gate end of the twenty-first MOS transistor M21. The output end of the bias circuit unit is connected to the gate end of the eighteenth MOS transistor M18. The output end of the delay device is connected to the third input end of the D flip-flop I7.

[0106] It should be noted that the bandgap reference module is used to provide a reference voltage. The bandgap reference utilizes the superposition of positive temperature coefficient (PTC) and negative temperature coefficient (NTC) voltages to achieve a reference voltage with a near zero temperature coefficient.

[0107] It should be noted that the delay device outputs a BGOK signal and the voltage buffer outputs a 2.4V voltage.

[0108] Furthermore, if Figure 12As shown, the bias circuit unit includes: a tenth MOS transistor M10, an eleventh MOS transistor M11, a twelfth MOS transistor M12, a thirteenth MOS transistor M13, a fourteenth MOS transistor M14, a fifteenth MOS transistor M15, a sixteenth MOS transistor M16, a second MOS capacitor C2, a first Schmitt trigger I1, and a first inverter I2;

[0109] The power supply is connected to the second end of the tenth MOS transistor M10 and the first end of the eleventh MOS transistor M11. The gate end of the tenth MOS transistor M10 is connected to the gate end of the eleventh MOS transistor M11, the first end of the tenth MOS transistor M10, and the second end of the twelfth MOS transistor M12. The gate end of the twelfth MOS transistor M12 is connected to the first end of the twelfth MOS transistor M12 and the second end of the thirteenth MOS transistor M13. The gate end of the thirteenth MOS transistor M13 is connected to the gate end of the fourteenth MOS transistor M14 and the gate end of the sixteenth MOS transistor M16. The gate end of the eleventh MOS transistor M11 is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS transistor M14, one end of the second MOS capacitor C2, the second end of the fifteenth MOS transistor M15, and one end of the first Schmitt trigger I1; the first end of the fifteenth MOS transistor M15 is connected to the first end of the sixteenth MOS transistor M16; the gate end of the fifteenth MOS transistor M15 is connected to the other end of the first Schmitt trigger I1 and one end of the first inverter I2; the first end of the thirteenth MOS transistor M13, the second end of the fourteenth MOS transistor M14, the other end of the second MOS capacitor C2, and the second end of the sixteenth MOS transistor M16 are grounded;

[0110] The other end of the first inverter I2 is connected to the gate end of the eighteenth MOS transistor M18.

[0111] It should be noted that the bias circuit unit is used for initializing power-on.

[0112] In a specific embodiment, Figure 13 As shown, the second current source IBP and the first current source IBN include: an initial MOS transistor M0, a first MOS transistor M1, a second MOS transistor M2, a third MOS transistor M3, a fourth MOS transistor M4, a fifth MOS transistor M5, a sixth MOS transistor M6, a seventh MOS transistor M7, an eighth MOS transistor M8, a ninth MOS transistor M9, a first MOS capacitor C1, and an adjustable resistor R0;

[0113] The second end of the initial MOS transistor M0 is connected to one end of the adjustable resistor R0, the gate end of the initial MOS transistor M0 is connected to the gate end of the first MOS transistor M1, the second end of the first MOS transistor M1, the gate end of the fourth MOS transistor M4, and the first end of the third MOS transistor M3, the first end of the first MOS transistor M1, the first end of the fourth MOS transistor M4, the second end of the fifth MOS transistor M5, the other end of the adjustable resistor R0, and ground, the second end of the fourth MOS transistor M4 is connected to the other end of the first MOS capacitor C1 and the gate end of the fifth MOS transistor M5, the first end of the fifth MOS transistor M5 is connected to the gate end of the fourth MOS transistor M5, and the first end of the fifth MOS transistor M5 is connected to the gate end of the fourth MOS transistor M5. The gate end of the second MOS transistor M2, the gate end of the third MOS transistor M3, the second end of the second MOS transistor M2, the first end of the initial MOS transistor M0, the gate end of the sixth MOS transistor M6, the gate end of the seventh MOS transistor M7, the gate end of the eighth MOS transistor M8, and the gate end of the ninth MOS transistor M9 are connected, and the power supply is connected to one end of the first MOS capacitor C1, the second end of the third MOS transistor M3, the first end of the second MOS transistor M2, the first end of the sixth MOS transistor M6, the first end of the seventh MOS transistor M7, the first end of the eighth MOS transistor M8, and the first end of the ninth MOS transistor M9.

[0114] It should be noted that the second current source IBP and the first current source IBN are used for current bias.

[0115] It should be noted that the heat dissipation process of the present invention includes two alternating stages: electron beam bombardment and heat dissipation. In the electron beam bombardment stage, the electron beam passes through the micron-level first channel on the fixed copper block and accurately hits a micro-nanostructure anode target welded by tungsten needles on the rotatable rotor, generating microfocused X-rays. The bombardment duration is T / 2. In the heat dissipation stage, the electron beam is turned off, and the rotatable rotor rotates for T / 2 time to move the next micro-nanostructure anode target to the bombardment position. When the next target is in place, the electron beam is turned back on, and the cycle repeats. The rotatable rotor drives the micro-nanostructure anode target to perform periodic motion, which significantly improves the heat dissipation capacity of the target material; the use of a transmissive microstructure target material ensures the microfocusing of the generated X-ray source; and realizes the organic unity of the microfocusing and high-dose output of the X-ray source.

[0116] The present invention generates precise timing control signals through a dedicated integrated circuit, wherein the periods of the electron beam switch signal and the rotor rotation control signal are both T, and the period of one rotor rotation is Tn (n is the number of target materials welded on the rotor). The method for determining the control period T is: first, set the maximum allowable operating temperature T of the micro-nanostructure anode target. temp Then, theoretical calculation is used to determine the longest bombardment time required for the target to reach this temperature under a given electron beam power, which is T / 2. In a complete heat dissipation cycle, after a single target is bombarded by the electron beam for t1=T / 2 time, the temperature rises to the set value T temp, and then dissipate heat during the time t2 = (n-1)T + T / 2. The target dissipates heat by radiating to the environment.

[0117] In a specific embodiment, the rotating rotor 15 is made of molybdenum because molybdenum has good thermal conductivity (138W / (m·K)), a high melting point (2896K) and a moderate thermal expansion coefficient (4.8×10 -6 / K). The micro-nanostructure anode target 16 is also made of molybdenum material, mainly considering its moderate X-ray yield and good thermal stability. In other embodiments, according to different application requirements, materials such as tungsten (suitable for high-energy X-ray generation), copper (suitable for low-energy X-ray generation), and gold (suitable for characteristic X-ray analysis) can be selected. The micro-nanostructure anode target adopts a cylindrical structure with a bottom diameter of 1 micron and a height of 2.6 microns. This set of parameters is obtained through theoretical calculations, and has good intrinsic heat dissipation performance while ensuring micro-focusing characteristics. For other application scenarios, different structural shapes (such as prisms, cones, etc.) and size ranges (1 nanometer to 100 microns) can be selected.

[0118] In a static working state, when the microstructured target is continuously bombarded by a 40keV electron beam, the maximum current density it can carry is 14.14mA / cm2 under the conditions of a surface emissivity of 0.5 and a target temperature below 2000K. 2 .

[0119] In order to improve the electron beam carrying density of the system, this embodiment adopts a rotating design of 8 micro-nanostructure anode targets. Through precise control, the electron beam bombardment time of each target is 0.1ms, and then enters a 1.5ms heat dissipation cycle (including 0.1ms bombardment time and 7×0.2ms rotation time). During the period when the target is not bombarded by the electron beam, heat conduction and heat dissipation are achieved through thermal contact with the large-area fixed copper block 12, which significantly improves the heat dissipation efficiency. This innovative periodic active heat dissipation design increases the electron beam current density that the system can carry to 282.28mA / cm 2 , which is about 20 times higher than the static working state, while ensuring that the target temperature is always kept within a safe range.

[0120] Example 2

[0121] Based on the X-ray generating device described in Example 1, this embodiment uses the same X-ray generating device as that in Example 1. Figure 14 As shown, a miniaturized X-ray generating device, based on the X-ray generating device described in Example 1, further includes: a housing 50, a switch 30, a battery 40, and a beryllium window 60;

[0122] The beryllium window 60 is embedded in the housing 50 and is located on the axis of the first channel. The interior of the housing 50 is vacuum, and the switch 30 , the battery 40 and the control unit 20 are connected.

[0123] Figure 14 The reference numeral 20 indicates a control unit.

[0124] It should be noted that the battery 40 is composed of multiple lithium batteries connected in series and parallel, and is used to power the device; the housing 50 is made of lead or other protective materials for radiation protection; and the beryllium window 60 is used for transmission output of X-rays.

[0125] It should be noted that by properly controlling the power consumption of the entire X-ray generator, including reducing the power consumption of the control circuit and the output power of the electron beam emission, the system can be powered by high-energy-density lithium batteries, thereby miniaturizing the power supply system. This miniaturized X-ray generator features a compact structure, excellent heat dissipation, and safe and reliable operation, making it particularly suitable for applications requiring miniaturization and high resolution, such as portable X-ray fluorescence analyzers.

[0126] When VCC is powered on, the chip begins operation. First, the bias circuit module 21 activates the power reset circuit, enabling the bandgap reference source unit and providing reference voltage signals of 1.2V (VREF1P2V), 1V (VREF1V), and 2.4V (VREF2P4V). The BGOK signal generated by the reference source 22 serves as the startup signal for other modules, ensuring that each functional module starts according to the set sequence. The power supply module 23 (LDO) generates a 1.8V voltage (VOUT_VDD) to power the clock oscillator 241; the oscillator then generates a square wave signal (EN_OSC) with a period of 0.2ms. The oscillator signal is processed by the signal control module 242 to generate two non-overlapping control signals (EN_ELEBEAM and EN_TAR). These signals control the switching of the electron beam and the rotation of the anode target through relays, thereby achieving precise control of the micro X-ray tube. Simultaneously, the temperature monitoring module 25 converts the temperature into a voltage signal (VT), which is used to monitor the target temperature. When the temperature signal VT exceeds a preset threshold, the output of the over-temperature protection hysteresis comparator 251 will be triggered, immediately shutting off the electron beam and stopping the target rotation; after the temperature returns to normal, the control signal will be restarted.

[0127] Tests on the control unit showed that the system control signal period was 205μs, consistent with the design target (about 0.2ms); the chip's static power consumption was approximately 14.75μA, and the average power consumption was 15.81μA, allowing the chip to continue operating for more than 60,000 hours when powered by a 3.3V, 1000mAh lithium battery, meeting the requirements for long-term, low-power operation.

[0128] For the power consumption of the cathode emission electron beam system, if the electron beam spot diameter is 0.2 mm and the electron beam current is 100 μA, the current density is 318 mA / cm 2 , which is higher than the limiting current density of 282.28 mA / cm that the micro-nanostructure anode target can carry in the embodiment. 2 The electron beam acceleration section consumes 40kV x 100μA (the power consumption of the electron beam field emission is negligible), or 4W. Using two 14.8V, 625mAh lithium batteries, the total energy consumption is 18.5Wh. Considering 80% energy conversion efficiency, the actual power consumption is 4W / 0.8 = 5W, and the theoretical battery life is approximately 3.7 hours.

[0129] Therefore, a miniaturized X-ray generating device can be completely powered by lithium batteries. This portable design not only ensures the normal operation of the system, but also meets practical application needs.

[0130] The same or similar reference numerals correspond to the same or similar components;

[0131] The terms used in the drawings to describe positional relationships are for illustrative purposes only and should not be construed as limiting this patent;

[0132] Obviously, the above embodiments of the present invention are merely examples for the purpose of clearly illustrating the present invention, and are not intended to limit the embodiments of the present invention. Those skilled in the art will appreciate that other variations or modifications can be made based on the above description. It is not necessary and impossible to enumerate all embodiments here. Any modifications, equivalent substitutions, and improvements made within the spirit and principles of the present invention shall be included within the scope of protection of the claims of the present invention.

Claims

1. An X-ray generating device, comprising: A fixed copper block (12), a rotating rotor (15), a rotating component, a plurality of micro-nanostructure anode targets (16), an electron gun (11), and a control unit; The rotating rotor (15) and the fixed copper block (12) are coaxially arranged; a plurality of micro-nanostructure anode targets (16) are axially arranged on the rotating rotor (15), and the plurality of micro-nanostructure anode targets (16) are equidistant from the axis of the rotating rotor (15), which is a first distance; The fixed copper block (12) is provided with a first channel along the axial direction, the distance between the first channel and the axis of the fixed copper block (12) is a second distance, and the first distance and the second distance are equal; each of the micro-nanostructure anode targets (16) is in contact with the end face of the fixed copper block (12); The emission end of the electron gun (11) is located on the same horizontal line as the first channel; The rotating component is connected to the axis of the rotating rotor (15) to drive the rotating rotor (15) to rotate along the axis; The control unit is connected to the rotating component and the electron gun (11) respectively, and is used to control the rotation of the rotating component and the switching of the electron gun (11); The rotating parts include: a motor (13), a coupling (14); One end of the coupling (14) is connected to the rotating shaft of the motor (13), and the other end of the coupling (14) is connected to the axis of the rotating rotor (15); the control unit is connected to the control end of the motor (13).

2. The X-ray generating device according to claim 1, characterized in that: The material of the rotating rotor (15) is any one of molybdenum, tungsten, niobium, tantalum, rhenium or their alloys, and the material of the micro-nanostructure anode target (16) is any one of molybdenum, tungsten, copper, gold, silver, rhodium and chromium.

3. The X-ray generating device according to claim 1, characterized in that: The micro-nanostructure anode target (16) is connected to the rotating rotor (15) via a tungsten needle (17).

4. The X-ray generating device according to claim 3, characterized in that: The control unit includes: a bias circuit unit, a bandgap reference source unit, a power supply module, a clock unit, a temperature monitoring module, and a temperature sensor; The temperature sensor is installed on the fixed copper block, and the output end of the temperature sensor is connected to the input end of the temperature monitoring module; the output end of the temperature monitoring module is connected to the input end of the clock unit, and the output end of the clock unit is connected to the input end of the electron gun and the input end of the rotating component.

5. The X-ray generating device according to claim 4, characterized in that: The temperature monitoring module includes: a 32nd MOS transistor (M32), a 33rd MOS transistor (M33), a 34th MOS transistor (M34), a 35th MOS transistor (M35), a 36th MOS transistor (M36), a 37th MOS transistor (M37), an 11th resistor (R11), a 12th resistor (R12), a 13th resistor (R13), a 14th resistor (R14), a third Schmitt trigger (I21), a fourth inverter (I22), an operational amplifier (I23), a first current source (IBN), a second current source (IBP), an eighth MOS capacitor (C8), and a ninth MOS capacitor (C9); The other end of the eleventh resistor (R11) is connected to one end of the twelfth resistor (R12), the second end of the thirty-second MOS transistor (M32), and the first end of the thirty-third MOS transistor (M33); the other end of the twelfth resistor (R12) is connected to one end of the thirteenth resistor (R13), the second end of the thirty-fourth MOS transistor (M34), and the first end of the thirty-fifth MOS transistor (M35); the inverting input end of the operational amplifier (I23) is connected to the first end of the thirty-second MOS transistor (M32), the second end of the thirty-third MOS transistor (M33), the first end of the thirty-fourth MOS transistor (M34), and the second end of the thirty-fifth MOS transistor (M35); the other end of the fourteenth resistor (R14) is connected to one end of the eighth MOS capacitor (C8) and the non-inverting input end of the operational amplifier (I23); and the output end of the operational amplifier (I23) is connected to the gate of the thirty-sixth MOS transistor (M36). an end of the 37th MOS transistor (M37) and a gate end of the 37th MOS transistor (M37); the other end of the second current source (IBP) is connected to the first end of the 36th MOS transistor (M36); the second end of the 37th MOS transistor (M37) is connected to one end of the first current source (IBN); the second end of the 36th MOS transistor (M36) is connected to the first end of the 37th MOS transistor (M37) and one end of the third Schmitt trigger (I21); the other end of the third Schmitt trigger (I21) is connected to one end of the ninth MOS capacitor (C9), the gate end of the 33rd MOS transistor (M33), the gate end of the 34th MOS transistor (M34), and one end of the fourth inverter (I22); the other end of the thirteenth resistor (R13), the other end of the first current source (IBN), the other end of the eighth MOS capacitor (C8), and the other end of the ninth MOS capacitor (C9) are grounded; The temperature sensor is connected to one end of the eleventh resistor (R11), the other end of the fourth inverter (I22) is connected to the gate end of the thirty-second MOS transistor (M32), the gate end of the thirty-fifth MOS transistor (M35), and the input end of the clock unit, and the output end of the bandgap reference source unit is connected to one end of the fourteenth resistor (R14).

6. The X-ray generating device according to claim 5, characterized in that: The clock unit includes: a ring oscillator and a signal control module; The signal control module includes: a D flip-flop (I7), an eleventh inverter (I8), a fifth inverter (I9), a sixth inverter (I10), a seventh inverter (I11), an eighth inverter (I12), a NOR gate (I13), a two-input NAND gate (I14), a first buffer (I15), a second buffer (I16), a first three-input NAND gate (I17), a second three-input NAND gate (I18), a ninth inverter (I19), and a tenth inverter (I20); The other end of the eleventh inverter (I8) is connected to the first input end of the NOR gate (I13) and the second input end of the two-input NAND gate (I14); the output end of the NOR gate (I13) is connected to one end of the first buffer (I15); the other end of the first buffer (I15) is connected to one end of the fifth inverter (I9); the other end of the fifth inverter (I9) is connected to the second input end of the D flip-flop (I7), one end of the tenth inverter (I20), and the first input end of the two-input NAND gate (I14); the output end of the two-input NAND gate (I14) is connected to one end of the second buffer (I16); the other end of the second buffer (I16) is connected to the sixth inverter (I10). one end of the sixth inverter (I10) is connected to the second input end of the NOR gate (I13) and the third input end of the second three-input NOT gate (I18); the other end of the tenth inverter (I20) is connected to the third input end of the first three-input NAND gate (I17); the second output end of the D flip-flop (I7) is connected to the first input end of the first three-input NAND gate (I17); the output end of the first three-input NAND gate (I17) is connected to one end of the seventh inverter (I11); the output end of the second three-input NOT gate (I18) is connected to one end of the eighth inverter (I12); and the other end of the ninth inverter (I19) is connected to the first input end of the D flip-flop (I7); The output end of the ring oscillator is connected to one end of the eleventh inverter (I8), one end of the ninth inverter (I19) is connected to the first input end of the second three-input NOT gate (I18) and the other end of the fourth inverter (I22), the other end of the seventh inverter (I11) is connected to the rotating component, the other end of the eighth inverter (I12) is connected to the electron gun, and the output end of the bandgap reference source unit is connected to the third input end of the D flip-flop (I7), the second input end of the first three-input NAND gate (I17), and the second input end of the second three-input NOT gate (I18); The ring oscillator includes: a first current source (IBN), a twenty-sixth MOS transistor (M26), a twenty-seventh MOS transistor (M27), a twenty-eighth MOS transistor (M28), a twenty-ninth MOS transistor (M29), a thirtieth MOS transistor (M30), a thirty-first MOS transistor (M31), a second current source (IBP), a level converter (I3), a second Schmitt trigger (I4), a second inverter (I5), a third inverter (I6), a second current source (IBP), a fifth MOS capacitor (C5), a sixth MOS capacitor (C6), and a seventh MOS capacitor (C7); The other end of the second current source (IBP) is connected to the first end of the twenty-sixth MOS transistor (M26), the first end of the twenty-seventh MOS transistor (M27), and the first end of the twenty-eighth MOS transistor (M28); the second end of the twenty-sixth MOS transistor (M26) is connected to the gate end of the twenty-seventh MOS transistor (M27), the first end of the twenty-ninth MOS transistor (M29), the gate end of the thirtieth MOS transistor (M30), and one end of the fifth MOS capacitor (C5); the second end of the twenty-ninth MOS transistor (M29), the second end of the thirtieth MOS transistor (M30), and the second end of the thirty-first MOS transistor (M31) are connected to one end of the first current source (IBN); the second end of the twenty-seventh MOS transistor (M27) is connected to the gate end of the twenty-eighth MOS transistor (M28), the first end of the thirtieth MOS transistor (M30), and the gate end of the thirty-first MOS transistor (M31); The gate end of the 26th MOS tube (M26), the gate end of the 29th MOS tube (M29), and one end of the third inverter (I6) are connected; the second end of the 28th MOS tube (M28) is connected to the first end of the 31st MOS tube (M31), one end of the seventh MOS capacitor (C7), and one end of the second Schmitt trigger (I4); the other end of the first current source (IBN), the other end of the fifth MOS capacitor (C5), the other end of the sixth MOS capacitor (C6), and the other end of the seventh MOS capacitor (C7) are grounded; the other end of the second Schmitt trigger (I4) is connected to one end of the second inverter (I5); the other end of the second inverter (I5) is connected to the gate end of the 26th MOS tube (M26), the gate end of the 29th MOS tube (M29), and one end of the third inverter (I6); and the other end of the third inverter (I6) is connected to the second input end of the level converter (I3); The output end of the power module is connected to one end of the second current source (IBP) and the first input end of the level converter (I3), the power supply is connected to the third input end of the level converter (I3), and the output end of the level converter (I3) is connected to one end of the eleventh inverter (I8).

7. The X-ray generating device according to claim 6, characterized in that: The power module includes: a nineteenth MOS transistor (M19), a twentieth MOS transistor (M20), a twenty-first MOS transistor (M21), a twenty-second MOS transistor (M22), a twenty-third MOS transistor (M23), a twenty-fourth MOS transistor (M24), a twenty-fifth MOS transistor (M25), an eighth resistor (R8), a ninth resistor (R9), a tenth resistor (R10), a first current source (IBN), a third MOS capacitor (C3), and a fourth MOS capacitor (C4); The power supply is connected to the second end of the twenty-third MOS transistor (M23), the first end of the twenty-fourth MOS transistor (M24), and the first end of the twenty-fifth MOS transistor (M25); the gate end of the twenty-third MOS transistor (M23) is connected to the gate end of the twenty-fourth MOS transistor (M24); the second end of the twenty-second MOS transistor (M22) is connected to one end of the third MOS capacitor (C3), the gate end of the twenty-fifth MOS transistor (M25), and the second end of the twenty-fourth MOS transistor (M24); the other end of the third MOS capacitor (C3) is connected to one end of the tenth resistor (R10); the other end of the fourth MOS capacitor (C4) is grounded; and the eighth resistor (R8) is connected to the gate end of the eighth resistor (R8). the other end is connected to one end of a ninth resistor (R9) and the gate end of a nineteenth MOS transistor (M19); the first end of a twenty-first MOS transistor (M21) is connected to the first end of a twenty-third MOS transistor (M23); the first end of a nineteenth MOS transistor (M19) is connected to the second end of a twenty-first MOS transistor (M21); the second end of a twentieth MOS transistor (M20) is connected to the first end of a twenty-second MOS transistor (M22); the first end of the nineteenth MOS transistor (M19) is connected to the second end of the twentieth MOS transistor (M20) and one end of a first current source (IBN); and the other end of the first current source (IBN) and the other end of the ninth resistor (R9) are grounded; The other end of the tenth resistor (R10) is connected to the second end of the twenty-fifth MOS transistor (M25), one end of the eighth resistor (R8), one end of the fourth MOS capacitor (C4), one end of the second current source (IBP), and the first input end of the level converter (I3); the output end of the bandgap reference source unit is connected to the gate end of the twenty-first MOS transistor (M21) and the gate end of the twenty-second MOS transistor (M22); and the gate end of the twentieth MOS transistor (M20) is connected to the output end of the bandgap reference source unit.

8. The X-ray generating device according to claim 7, characterized in that: The bandgap reference source unit includes: a bandgap reference source module, a voltage buffer, and a delay device; The bandgap reference source module includes: a seventeenth MOS transistor (M17), an eighteenth MOS transistor (M18), a first resistor (R1), a second resistor (R2), a third resistor (R3), a fourth resistor (R4), a fifth resistor (R5), a sixth resistor (R6), a seventh resistor (R7), a first PNP transistor (Q1), a second PNP transistor (Q2), and a low-power operational amplifier (I24); The power supply is connected to the first end of the eighteenth MOS tube (M18), the second end of the eighteenth MOS tube (M18) is connected to the first end of the seventeenth MOS tube (M17), the gate end of the seventeenth MOS tube (M17) is connected to the output end of the low-power operational amplifier (I24), the other end of the fourth resistor (R4) is connected to one end of the second resistor (R2) and one end of the third resistor (R3), the non-inverting input end of the low-power operational amplifier (I24) is connected to the other end of the third resistor (R3), the first PNP transistor (I24), and the output end of the low-power operational amplifier (I24). The emitter of the transistor (Q1) is connected, the inverting input terminal of the low-power operational amplifier (I24) is connected to the other end of the second resistor (R2) and one end of the first resistor (R1), the other end of the first resistor (R1) is connected to the emitter of the second PNP transistor (Q2), the base of the first PNP transistor (Q1), the collector of the first PNP transistor (Q1), the base of the second PNP transistor (Q2), the collector of the second PNP transistor (Q2), and the other end of the seventh resistor (R7) are grounded; The other end of the sixth resistor (R6) is connected to one end of the seventh resistor (R7) and one end of the fourteenth resistor (R14); the other end of the fifth resistor (R5) is connected to one end of the sixth resistor (R6) and the gate end of the twentieth MOS transistor (M20); the input end of the voltage buffer and the input end of the delay device are connected to the second end of the seventeenth MOS transistor (M17), one end of the fourth resistor (R4), and one end of the fifth resistor (R5); the output end of the voltage buffer is connected to the gate end of the twenty-first MOS transistor (M21); the output end of the bias circuit unit is connected to the gate end of the eighteenth MOS transistor (M18); and the output end of the delay device is connected to the third input end of the D flip-flop (I7).

9. The X-ray generating device according to claim 8, characterized in that: The bias circuit unit comprises: a tenth MOS transistor (M10), an eleventh MOS transistor (M11), a twelfth MOS transistor (M12), a thirteenth MOS transistor (M13), a fourteenth MOS transistor (M14), a fifteenth MOS transistor (M15), a sixteenth MOS transistor (M16), a second MOS capacitor (C2), a first Schmitt trigger (I1), and a first inverter (I2); The power supply is connected to the second end of the tenth MOS tube (M10) and the first end of the eleventh MOS tube (M11); the gate end of the tenth MOS tube (M10) is connected to the gate end of the eleventh MOS tube (M11), the first end of the tenth MOS tube (M10), and the second end of the twelfth MOS tube (M12); the gate end of the twelfth MOS tube (M12) is connected to the first end of the twelfth MOS tube (M12) and the second end of the thirteenth MOS tube (M13); the gate end of the thirteenth MOS tube (M13) is connected to the gate end of the fourteenth MOS tube (M14) and the gate end of the sixteenth MOS tube (M16); the gate end of the eleventh MOS tube (M11) is connected to the gate end of the The second end is connected to the first end of the fourteenth MOS tube (M14), one end of the second MOS capacitor (C2), the second end of the fifteenth MOS tube (M15), and one end of the first Schmitt trigger (I1); the first end of the fifteenth MOS tube (M15) is connected to the first end of the sixteenth MOS tube (M16); the gate end of the fifteenth MOS tube (M15) is connected to the other end of the first Schmitt trigger (I1) and one end of the first inverter (I2); the first end of the thirteenth MOS tube (M13), the second end of the fourteenth MOS tube (M14), the other end of the second MOS capacitor (C2), and the second end of the sixteenth MOS tube (M16) are grounded; The other end of the first inverter (I2) is connected to the gate end of the eighteenth MOS transistor (M18).

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