Radio frequency front-end circuit, radio frequency transceiving device and electronic equipment

Abstract

The invention provides a radio frequency front-end circuit, a radio frequency transceiving device and electronic equipment. The radio frequency front-end circuit is provided with a first connecting end, the first connecting end is used for being electrically connected with the first radiator, and the radio frequency front-end circuit comprises a power amplification module and a first filter; the power amplification module comprises a power amplifier and is provided with a first receiving pin and a first output pin, the first receiving pin receives the first transmitting signal, the power amplifier performs power amplification on the first transmitting signal to obtain a second transmitting signal, and the second transmitting signal is output by the first output pin; the first filter is provided with a first filtering input end and a first filtering output end, the first filtering input end is electrically connected to the first output pin so as to pass through a target transmitting signal of a target frequency band in the second transmitting signal and filter clutters except the target transmitting signal, and the first filtering output end is electrically connected to the first connecting end; the output module is used for outputting target emission signals to the first radiator. The transmitting power of the target transmitting signal output by the radio frequency front-end circuit is relatively high.

Description

Technical Field

[0001] The present application relates to the field of communication technology, and in particular to a radio frequency front-end circuit, a radio frequency transceiver and an electronic device. Background Art

[0002] With the development of technology, electronic devices with communication functions such as mobile phones are becoming more and more popular and their functions are becoming more and more powerful. Electronic devices usually include radio frequency transceivers to realize the communication function of electronic devices. However, the radio frequency transceivers in electronic devices in related technologies have a large power loss when transmitting electromagnetic wave signals. Summary of the invention

[0003] In a first aspect, an embodiment of the present application provides a radio frequency front-end circuit, wherein the radio frequency front-end circuit has a first connection end, wherein the first connection end is used to electrically connect to a first radiator, and the radio frequency front-end circuit includes:

[0004] A power amplification module, the power amplification module comprising a power amplifier, the power amplification module having a first receiving pin and a first output pin, the first receiving pin being used to receive a first transmitting signal, the power amplifier being used to power amplify the first transmitting signal to obtain a second transmitting signal, and the second transmitting signal being output via the first output pin; and

[0005] A first filter, wherein the first filter has a first filter input terminal and a first filter output terminal, wherein the first filter input terminal is electrically connected to a first output pin, and is used to pass a target transmission signal of a target frequency band in the second transmission signal, and filter out clutter other than the target transmission signal, and the first filter output terminal is electrically connected to the first connection terminal, and is used to output the target transmission signal, so that the first radiator transmits an electromagnetic wave signal of a target frequency band according to the target transmission signal.

[0006] In a second aspect, an embodiment of the present application provides a radio frequency transceiver device, the radio frequency transceiver device comprising:

[0007] a first radiator; and

[0008] The RF front-end circuit as described in the first aspect.

[0009] In a third aspect, an embodiment of the present application provides an electronic device, wherein the electronic device includes the radio frequency transceiver device as described in the second aspect.

[0010] In summary, in the RF front-end circuit provided in the embodiment of the present application, the first transmit signal is passed through the power amplifier of the power amplifier module to obtain the second transmit signal, and the second transmit signal is output through the first output pin of the power amplifier module. Therefore, the first transmit signal does not pass through the duplexer and the switch, thereby reducing the loss of the second transmit signal output by the first output pin compared to the first transmit signal. In other words, the power of the second transmit signal output by the power amplifier module of the RF front-end circuit provided in the embodiment of the present application is relatively high. Furthermore, the transmission power of the target transmit signal of the target frequency band obtained by filtering the second transmit signal by the first filter is relatively high, thereby improving the communication coverage capability of the target transmit signal of the target frequency band. BRIEF DESCRIPTION OF THE DRAWINGS

[0011] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0012] Figure 1 A schematic diagram of an electronic device provided in one embodiment of the present application;

[0013] Figure 2 An implementation method Figure 1 A circuit block diagram of a radio frequency transceiver in an electronic device shown in ;

[0014] Figure 3 Another embodiment Figure 1 A circuit block diagram of a radio frequency transceiver in an electronic device shown in ;

[0015] Figure 4 A schematic diagram of a radio frequency front-end circuit provided in one embodiment of the present application;

[0016] Figure 5 A schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application;

[0017] Figure 6 A schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application;

[0018] Figure 7 A schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application;

[0019] Figure 8 A schematic diagram of a radio frequency front-end circuit provided in yet another embodiment of the present application;

[0020] Fig. 9 for Figure 8 A specific circuit diagram of the RF front-end circuit shown in FIG. DETAILED DESCRIPTION

[0021] The technical solution of the present application will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the embodiments described in the present application are only a part of the embodiments, not all of the embodiments. Based on the embodiments provided in the present application, all other embodiments obtained by ordinary technicians in this field without creative work belong to the protection scope of the present application.

[0022] Reference to "embodiments" in this application means that a particular feature, structure, or characteristic described in conjunction with the embodiments may be included in at least one embodiment of the present application. The appearance of the phrase in various locations in the specification does not necessarily refer to the same embodiment, nor is it mutually exclusive, independent, or alternative to other embodiments. It can be explicitly and implicitly understood by those skilled in the art that the embodiments described in this application can be combined with other embodiments.

[0023] The terms "first", "second", etc. in the specification and claims of this application and the above-mentioned drawings are used to distinguish different objects, rather than to describe a specific order. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example: a component or device including one or more parts is not limited to the one or more parts listed, but optionally includes one or more parts that are not listed but inherent to the exemplified product, or one or more parts that it should have based on the described function.

[0024] An embodiment of the present application provides an electronic device 1. The electronic device 1 includes but is not limited to a mobile phone, a telephone, a television, a tablet computer (Pad), a personal computer, a laptop computer (Personal Computer, PC), a vehicle-mounted device, a headset, a watch, a wearable device, and other devices capable of transmitting and receiving electromagnetic wave signals. In the schematic diagram of the embodiment of the present application, the electronic device 1 is illustrated as a mobile phone as an example, which should be understood that it should not be understood as a limitation on the electronic device 1 provided in the embodiment of the present application. The electronic device 1 provided in the embodiment of the present application is introduced.

[0025] See also Figure 1 and Figure 2 , Figure 1 A schematic diagram of an electronic device provided in one embodiment of the present application; Figure 2 An implementation method Figure 1The circuit block diagram of the radio frequency transceiver in the electronic device shown in the figure. The electronic device 1 includes a radio frequency transceiver 10. The radio frequency transceiver 10 is used to transmit electromagnetic wave signals in the target frequency band. In one embodiment, the radio frequency transceiver 10 is also used to receive electromagnetic wave signals in the target frequency band. In this way, the radio frequency transceiver 10 can realize the communication function of the target frequency band.

[0026] The target frequency band may be, but is not limited to, a frequency band of a 3G, 4G, or 5G communication standard. For example, the target frequency band may be, but is not limited to, a low frequency band (Low Band, LB), a middle frequency band (Middle Band, MB), a high frequency band (High Band, HB), or an ultra high frequency band (Ultra High Frequency, UHB), etc.

[0027] In one embodiment, the electronic device 1 further includes a middle frame 30, a display screen 50 and a back cover 60. The display screen 50 is disposed on one side of the middle frame 30. The display screen 50 is a component for realizing a display function in the electronic device 1. The display screen 50 may be, but is not limited to, a screen with a touch function, or a screen without a touch function, which is not limited in the present application. The back cover 60 is disposed on the other side of the middle frame 30. In other words, the back cover 60 and the display screen 50 are respectively disposed on two opposite sides of the middle frame 30. When the electronic device 1 further includes a battery, the back cover 60 is also referred to as a battery cover. The material of the back cover 60 may be metal or non-metal, which is not limited in the present embodiment.

[0028] It is understandable that the introduction of the electronic device 1 provided in the embodiment of the present application is only an introduction to an application environment of the radio frequency transceiver 10. It should not be understood as a limitation of the radio frequency transceiver 10 provided in the embodiment of the present application. Next, the radio frequency transceiver 10 provided in the embodiment of the present application is introduced in detail.

[0029] Specifically, see Figure 2 , the RF transceiver device 10 includes a first radiator 200 and a RF front-end circuit 100. The RF front-end circuit 100 is electrically connected to the first radiator 200 to transmit the electromagnetic wave signal of the target frequency band through the first radiator 200. In other words, the first radiator 200 is a radiator in the RF transceiver device 10 that transmits the electromagnetic wave signal of the target frequency band.

[0030] The first radiator 200 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the first radiator 200 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the first radiator 200 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the first radiator 200 may also be a metal frame radiator designed using a metal middle frame 30.

[0031] See also Figure 3 , Figure 3 Another embodiment Figure 1 . In the present embodiment, in addition to the RF front-end circuit 100 and the first radiator 200, the RF transceiver 10 also includes at least one of a second radiator 300 and a third radiator 400. In the schematic diagram of the present embodiment, the RF transceiver 10 also includes the second radiator 300 and the third radiator 400 as an example. It can be understood that it should not be understood as a limitation on the RF transceiver 10 provided in the embodiment of the present application. The second radiator 300 and the third radiator 400 are electrically connected to the RF transceiver 10, respectively.

[0032] In this embodiment, the second radiator 300 and the third radiator 400 are radiators for receiving electromagnetic wave signals in the target frequency band in the RF transceiver 10. They will be described in detail later in conjunction with the specific structure of the RF front-end circuit 100.

[0033] The second radiator 300 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the second radiator 300 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the second radiator 300 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the second radiator 300 may also be a metal frame radiator designed using a metal middle frame 30. The type of the second radiator 300 may be the same as or different from the type of the first radiator 200, which is not limited here.

[0034] The third radiator 400 may be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the third radiator 400 may be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the third radiator 400 may be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the third radiator 400 may also be a metal frame radiator designed using a metal middle frame 30. The type of the third radiator 400 may be the same as or different from the type of the first radiator 200, which is not limited here.

[0035] See also Figure 4 , Figure 4 This is a schematic diagram of a radio frequency front-end circuit provided in one embodiment of the present application. Figure 2 , Figure 3 and Figure 4 The RF front-end circuit 100 has a first connection end 100a. The first connection end 100a is used to electrically connect to the first radiator 200. Figure 4, the RF front-end circuit 100 includes a power amplifier module 120 and a first filter 130. The power amplifier module 120 includes a power amplifier 121. The power amplifier module 120 has a first receiving pin 121a (PA IN) and a first output pin 121b (TX OUT). The first receiving pin 121a is used to receive a first transmit signal. The power amplifier 121 is used to amplify the power of the first transmit signal to obtain a second transmit signal. The second transmit signal is output via the first output pin 121b. The first filter 130 has a first filter input terminal 130a and a first filter output terminal 130b. The first filter input terminal 130a is electrically connected to the first output pin 121b, and is used to pass the target transmit signal of the target frequency band in the second transmit signal, and filter out the clutter outside the target transmit signal. The first filter output terminal 130b is electrically connected to the first connection terminal 100a, and is used to output the target transmit signal, so that the first radiator 200 transmits an electromagnetic wave signal of the target frequency band according to the target transmit signal.

[0036] In one implementation, the power amplifier module 120 may be packaged as an independent chip or module.

[0037] The first receiving pin 121a is used to receive a first transmitting signal and transmit the first transmitting signal to the input end of the power amplifier 121. The power amplifier 121 amplifies the power of the first transmitting signal to obtain a second transmitting signal. The power of the second transmitting signal is greater than the power of the first transmitting signal. The second transmitting signal is output via the first output pin 121b.

[0038] The first filter 130 is located outside the power amplification module 120 , and the first filter 130 is independent of the power amplification module 120 .

[0039] The first input end of the first filter 130 is electrically connected to the first output pin 121b for receiving the second transmission signal. The first filter 130 is used to pass the target transmission signal of the target frequency band in the second transmission signal and filter out the clutter of the target frequency band. Therefore, after the second transmission signal is filtered by the first filter 130, the target transmission signal of the target frequency band is obtained.

[0040] In order to facilitate the description of the beneficial effects of the RF front-end circuit 100 provided in the embodiment of the present application, the RF front-end circuit 100 in the related art before the improvement of the RF front-end circuit 100 provided in the embodiment of the present application is first described.

[0041] The power amplifier module of the RF front-end circuit in the related art also includes a duplexer and a switch. After the first transmission signal passes through the power amplifier, it is output through the duplexer and the switch respectively. The duplexer has a loss on the first transmission signal. In addition, the switch also has a loss on the first transmission signal. It can be seen that the power amplifier module of the RF front-end circuit in the related art includes a duplexer and a switch, and the first transmission signal is output after passing through the duplexer and the switch. Therefore, the power amplifier of the RF front-end circuit in the related art has a large loss.

[0042] In summary, in the RF front-end circuit 100 provided in the embodiment of the present application, the first transmission signal is passed through the power amplifier 121 of the power amplifier module 120 to obtain the second transmission signal, and the second transmission signal is output via the first output pin 121b of the power amplifier module 120. Therefore, the first transmission signal does not pass through the duplexer and the switch, thereby reducing the loss of the second transmission signal output by the first output pin 121b compared to the first transmission signal. In other words, the power of the second transmission signal output by the power amplifier module 120 of the RF front-end circuit 100 provided in the embodiment of the present application is relatively high. Furthermore, the transmission power of the target transmission signal of the target frequency band obtained by filtering the second transmission signal by the first filter 130 is relatively high, thereby improving the communication coverage capability of the target transmission signal of the target frequency band.

[0043] It can be seen that the power of the second transmission signal output by the power amplifier module 120 of the RF front-end circuit 100 provided in the embodiment of the present application is higher than the power of the transmission signal output by the power amplifier module 120 of the related art. For example, the power of the second RF signal output by the first output pin 121b of the power amplifier module 120 in the RF front-end circuit 100 provided in the embodiment of the present application is 1.5dB or about 1.5dB higher than the power of the transmission signal output by the power amplifier module 120 in the RF front-end circuit 100 of the related art.

[0044] In one implementation, the insertion loss of the first filter 130 is less than or equal to 0.8 dB.

[0045] For example, the insertion loss of the first filter 130 may be, but is not limited to, 0.8dB, or 0.75dB, or 0.7dB, or 0.65dB, or 0.6dB, or 0.55dB, or 0.5dB, or 0.45dB, or 0.4dB, or 0.35dB, or 0.3dB, or 0.25dB, or 0.2dB.

[0046] In this embodiment, the insertion loss of the first filter 130 is less than or equal to 0.8 dB, which can reduce the power loss of the target transmission signal of the target frequency band obtained after the second transmission signal passes through the first filter 130, thereby increasing the power of the electromagnetic wave signal of the target frequency band transmitted by the first radiator 200 according to the transmission signal of the target frequency band. When the RF transceiver 10 and the electronic device 1 used by the RF front-end circuit 100 communicate using the electromagnetic wave signal of the target frequency band, the transmission performance in the target frequency band is good.

[0047] Furthermore, in one embodiment, when the target frequency band is a low frequency band (Low Band, LB), the insertion loss of the first filter 130 is less than or equal to 0.5 dB.

[0048] When the target frequency band is any one of a middle frequency band (MB), a high frequency band (HB) and an ultra high frequency band (UHB), the insertion loss of the first filter 130 is less than or equal to 0.8 dB.

[0049] For example, when the target frequency band is a low frequency band, the insertion loss of the first filter 130 may be, but is not limited to, 0.5 dB, or 0.45 dB, or 0.4 dB, or 0.35 dB, or 0.3 dB, or 0.25 dB, or 0.2 dB.

[0050] In this embodiment, the insertion loss of the first filter 130 is less than or equal to 0.5 dB, which can reduce the power loss of the target transmission signal in the low frequency band obtained after the second transmission signal passes through the first filter 130, thereby increasing the power of the electromagnetic wave signal in the low frequency band transmitted by the first radiator 200 according to the transmission signal in the low frequency band. When the RF transceiver 10 and the electronic device 1 used by the RF front-end circuit 100 communicate using the electromagnetic wave signal in the low frequency band, the transmission performance in the low frequency band is good.

[0051] When the target frequency band is one of the intermediate frequency band, the high frequency band and the ultra-high frequency band, the insertion loss of the first filter 130 can be but is not limited to 0.8dB, or 0.75dB, or 0.7dB, or 0.65dB, or 0.6dB, or 0.55dB, or 0.5dB, or 0.45dB, or 0.4dB, or 0.35dB, or 0.3dB, or 0.25dB, or 0.2dB.

[0052] In this embodiment, the insertion loss of the first filter 130 is less than or equal to 0.8 dB, which can make the power loss of the target transmission signal of the target frequency band obtained after the second transmission signal passes through the first filter 130 smaller, thereby making the power of the electromagnetic wave signal of the target frequency band transmitted by the first radiator 200 according to the transmission signal of the one of the intermediate frequency band, the high frequency band and the ultra-high frequency band larger. When the RF transceiver 10 and the electronic device 1 used by the RF front-end circuit 100 communicate using the electromagnetic wave signal of the one of the intermediate frequency band, the high frequency band and the ultra-high frequency band, the transmission performance of the one of the intermediate frequency band, the high frequency band and the ultra-high frequency band is better.

[0053] See also Figure 5 , Figure 5 A schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application. The radio frequency front-end circuit 100 has a first connection terminal 100a. The first connection terminal 100a is used to electrically connect to a first radiator 200. The radio frequency front-end circuit 100 includes a power amplifier module 120 and a first filter 130. The power amplifier module 120 includes a power amplifier 121. The power amplifier module 120 has a first receiving pin 121a (PA IN) and a first output pin 121b (TXOUT). The first receiving pin 121a is used to receive a first transmit signal. The first port 110a of the power amplifier 121 is used to power amplify the first transmit signal to obtain a second transmit signal. The second transmit signal is output via the first output pin 121b. The first filter 130 has a first filter input terminal 130a and a first filter output terminal 130b. The first filter input terminal 130a is electrically connected to the first output pin 121b, and is used to pass the target transmit signal of the target frequency band in the second transmit signal and filter out clutter outside the target transmit signal. The first filter output terminal 130 b is electrically connected to the first connection terminal 100 a and is used to output the target transmission signal so that the first radiator 200 transmits an electromagnetic wave signal in a target frequency band according to the target transmission signal.

[0054] Please refer to the previous description for the power amplifier module 120 and the first filter 130 , which will not be described again here.

[0055] Further, in this embodiment, the RF front-end circuit 100 also includes a RF transceiver 110 (RFIC) and a microstrip coupler 150. The RF transceiver 110 has a first port 110a. The first port 110a is electrically connected to the first receiving pin 121a of the power amplifier 121, and the RF transceiver 110 is used to output the original transmission signal, wherein the first transmission signal is obtained according to the original transmission signal. One end of the microstrip coupler 150 is connected to the first filter output end 130b, and the other end of the microstrip coupler 150 is electrically connected to the first connection end 100a, and the microstrip coupler 150 is used to detect the power of the target transmission signal to obtain a detection signal. The RF transceiver 110 controls the transmission power of the original transmission signal according to the detection signal.

[0056] In this embodiment, the RF transceiver 110 is used to generate the original transmission signal, and the original transmission signal is output via the first port 110a. The first receiving pin 121a of the power amplifier 121 is directly or indirectly electrically connected to the first port 110a. When the first receiving pin 121a of the power amplifier 121 is directly electrically connected to the first port 110a, the first transmission signal is the original transmission signal. In this embodiment, the first port 110a is directly electrically connected to the first receiving pin 121a of the power amplifier 121 as an example for illustration, which can be understood that it should not be understood as a limitation on the embodiment of the present application. When the first receiving pin 121a of the power amplifier 121 is indirectly electrically connected to the first port 110a, the first transmission signal is not equal to the original transmission signal. It will be described in detail later.

[0057] The microstrip coupler 150 is used to detect the power of the target transmission signal to obtain a detection signal. The detection signal is fed back to the RF transceiver 110. The RF transceiver 110 compares the power of the original transmission signal with the transmission power threshold to control the transmission power of the original signal. For example, if the power represented by the detection signal is less than the transmission power threshold, the RF transceiver 110 increases the transmission power of the original transmission signal; if the power represented by the detection signal is greater than the transmission power threshold, the RF transceiver 110 reduces the transmission power of the original transmission signal.

[0058] In the RF front-end circuit 100 provided in the embodiment of the present application, the microstrip coupler 150 is used to detect the power of the target transmission signal to obtain a detection signal, and the RF transceiver 110 controls the transmission power of the original transmission signal according to the detection signal, thereby improving the accuracy of the transmission power of the target transmission signal in the target frequency band output by the RF front-end circuit 100, so that the RF front-end circuit 100 has better transmission performance in the target frequency band.

[0059] See also Figure 6 , Figure 6 Schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application. The radio frequency front-end circuit 100 provided in this embodiment is Figure 5 The structure of the provided RF front-end circuit 100 is basically the same, except that, in this embodiment, the RF front-end circuit 100 further includes a second filter 160. The second filter 160 has a second filter input terminal 160a and a second filter output terminal 160b. The second filter input terminal 160a is electrically connected to the first port 110a, and the second filter output terminal 160b is electrically connected to the first receiving pin 121a. The second filter 160 is used to filter the original transmission signal to obtain the first transmission signal.

[0060] In this embodiment, the second filter input terminal 160a is electrically connected to the first port 110a to receive the original transmission signal output by the first port 110a; the second filter 160 is used to filter out the clutter in the original transmission signal to obtain the first transmission signal. In other words, the second filter 160 is used to filter the original transmission signal to obtain the first transmission signal. Specifically, the second filter 160 is used to pass the signal of the target frequency band in the original transmission signal and filter out the harmonic signal outside the target frequency band, so as to obtain the first transmission signal. The second filter output terminal 160b is electrically connected to the first receiving pin 121a to output the first transmission signal.

[0061] In one implementation, the target frequency band is a low frequency band, and accordingly, the second filter 160 is a low pass filter (LPF).

[0062] The RF front-end circuit 100 provided in the embodiment of the present application also includes a second filter 160, which is used to filter the original transmission signal to obtain the first transmission signal, thereby improving the quality of the electromagnetic wave signal emitted by the first radiator 200, so that the RF front-end circuit 100 has better communication function in the target frequency band.

[0063] Please read further Figure 5 , the first transmitted signal is the original signal. Compared with Figure 6 and Figure 6 As for the RF front-end circuit 100 provided in the described embodiment, the RF front-end circuit 100 provided in this embodiment does not include a second filter. Therefore, in this embodiment, the first transmission signal is the original signal.

[0064] In the RF front-end circuit 100 provided in the embodiment of the present application, the first receiving pin 121a of the power amplifier 121 is directly electrically connected to the first port 110a, and the first transmitting signal is the original transmitting signal. The first receiving pin 121a is directly electrically connected to the first port 110a.

[0065] The present application does not limit whether the RF front-end circuit 100 includes the second filter 160 .

[0066] In one embodiment, the target frequency band includes one of a low frequency, a medium frequency, a high frequency, and an ultra-high frequency.

[0067] The target frequency band includes one of low frequency, medium frequency, high frequency, and ultra-high frequency, which can meet the transmission function of the RF front-end circuit 100 at one of low frequency, medium frequency, high frequency, and ultra-high frequency.

[0068] In one embodiment, the target frequency band includes any one of 3G, 4G, and 5G.

[0069] The target frequency band includes any one of 3G, 4G, and 5G, so that the RF front-end circuit 100 can have the transmission function of the target frequency band of any one of 3G, 4G, and 5G.

[0070] For further information, see Figure 3 , Figure 7 , Figure 7A schematic diagram of a radio frequency front-end circuit provided for yet another embodiment of the present application. In this embodiment, the radio frequency transceiver 110 further has a second port 110b. The radio frequency front-end circuit 100 further has a second connection end 100b. The second connection end 100b is used to electrically connect to the second radiator 300 to receive the main set received signal (PRX) of the target frequency band. The power amplifier module 120 further has a second receiving pin 120a and a second output pin 120b. The second receiving pin 120a is electrically connected to the second connection end 100b, and the second output pin 120b is electrically connected to the second port 110b. The power amplifier module 120 further includes a low noise amplifier 122. One end of the low noise amplifier 122 is electrically connected to the second receiving pin 120a, and the other end of the low noise amplifier 122 is electrically connected to the second output pin 120b. The low noise amplifier 122 is used to amplify the main set received signal and output it to the radio frequency transceiver 110 via the second output pin 120b and the second port 110b. In order to distinguish it from the low noise amplifiers in other modules, the low noise amplifier 122 in the power amplifier module 120 can be named as a first low noise amplifier.

[0071] In this embodiment, the second radiator 300 can be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the second radiator 300 can be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the second radiator 300 can be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the second radiator 300 can also be a metal frame radiator designed using a metal middle frame 30.

[0072] In this embodiment, the RF front-end circuit 100 also includes a second connection end 100b, which is used to electrically connect to the second radiator 300 to receive the main set receiving signal of the target frequency band. Therefore, the RF front-end circuit 100 provided in the embodiment of the present application can realize the main set receiving function of the target frequency band.

[0073] From the introduction of the RF front-end circuit 100 provided in the embodiment of the present application, it can be known that the target transmission signal of the target frequency band and the main set of received signals of the target frequency band in the RF front-end circuit 100 provided in the embodiment of the present application have different paths, therefore, it is also called that the target transmission signal of the target frequency band and the main set of received signals of the target frequency band in the RF front-end circuit 100 provided in the embodiment of the present application are routed separately. The target transmission signal of the target frequency band and the main set of received signals of the target frequency band are routed separately, so that the first filter 130 filters the second transmission signal to pass the target transmission signal of the target frequency band in the second transmission signal, thereby reducing the power loss of the target transmission signal and improving the transmission power of the target frequency band.

[0074] Please continue reading Figure 7 , the RF front-end circuit 100 also has a third connection terminal 100c. The third connection terminal 100c is used to electrically connect to the third radiator 400 to receive the diversity reception signal (DRX) of the target frequency band. The power amplifier module 120 also has a third receiving pin 120c and a third output pin 120d, and the third receiving pin 120c is electrically connected to the third connection terminal 100c. The third output pin 120d is electrically connected to the third receiving pin 120c. The RF transceiver 110 also includes a third port 110c, and the RF front-end circuit 100 also includes a receiving module 170. One end of the receiving module 170 is electrically connected to the third output pin 120d, and the receiving module 170 is used to filter and amplify the diversity reception signal, and the other end of the receiving module 170 is electrically connected to the third port 110c.

[0075] In this embodiment, the third radiator 400 can be a laser direct structuring (LDS) radiator, or a flexible printed circuit (FPC) radiator, or a print direct structuring (PDS) radiator, or a metal branch radiator. When the RF transceiver 10 is applied to an electronic device 1, the third radiator 400 can be a mechanical design antenna (MDA) radiator designed using the metal insert of the electronic device 1 itself. For example, the third radiator 400 can be an antenna radiator designed using the middle frame 30 formed of plastic and metal of the electronic device 1. In addition, the third radiator 400 can also be a metal frame radiator designed using a metal middle frame 30.

[0076] In this embodiment, the receiving module 170 includes a duplexer 171 and a low noise amplifier 172. The duplexer 171 is used to filter out the clutter outside the target frequency band through the diversity receiving signal of the target frequency band in the diversity receiving signal. The low noise amplifier 172 is used to amplify the diversity receiving signal. It can be understood that in other embodiments, the receiving module 170 can also be other structures, which is not limited in this application. In order to facilitate the distinction from the low noise amplifiers in other modules, the low noise amplifier 122 in the power amplifier module 120 can be named as the first low noise amplifier. The low noise amplifier 172 in the receiving module 170 can be named as the second low noise amplifier.

[0077] In this embodiment, the RF front-end circuit 100 also includes a third connection terminal 100c, and the third connection terminal 100c is used to receive the diversity reception signal of the target frequency band. Therefore, the RF front-end circuit 100 provided in the embodiment of the present application can realize the diversity reception function of the target frequency band.

[0078] See also Figure 8 , Figure 8 A schematic diagram of a radio frequency front-end circuit provided in another embodiment of the present application. In this embodiment, the radio frequency front-end circuit 100 further includes a combiner 180. The combiner 180 includes a combiner receiving end 180a, a first combiner output end 180b and a second combiner output end 180c. The third connection end 100c is used to receive the original diversity reception signal received by the third radiator 400. The combiner receiving end 180a is electrically connected to the third connection end 100c to receive the original diversity reception signal. The combiner 180 is used to decompose the original diversity reception signal into a diversity reception signal of the target frequency band and a diversity reception signal of other frequency bands outside the target frequency band. The first combiner output end 180b is electrically connected to the third receiving pin 120c to output the diversity reception signal of the target frequency band to the third receiving pin 120c. The second combiner output end 180c is used to output the diversity reception signal of the other frequency bands and output it to the radio frequency transceiver 110. The other frequency band is different from the target frequency band. For example, when the target frequency band is a low frequency band, the other frequency band may be, but is not limited to, a Bluetooth frequency band, a medium frequency band, a high frequency band, or an ultra-high frequency band.

[0079] The RF front-end circuit 100 provided in the embodiment of the present application also includes a combiner 180. Therefore, the diversity reception signal of the target frequency band and the diversity reception signal of the other frequency bands in the RF front-end circuit 100 can share the same third radiator 400, thereby reducing the number of radiators in the RF transceiver device 10 used by the RF front-end circuit 100.

[0080] Furthermore, in one embodiment, the RF front-end circuit 100 further includes a first test socket 191. The first test socket 191 is electrically connected between the first connection end 100a and the microstrip coupler 150. It can be understood that when the RF front-end circuit 100 does not include the microstrip coupler 150, the first test socket 191 is electrically connected between the first connection end 100a and the first filter output end 130b of the first filter 130. The first test socket 191 is used to electrically connect a test instrument to test the performance of the target transmission signal of the target frequency band to obtain a first test signal, and the first test signal is used to determine whether the target transmission signal meets the specification requirements.

[0081] Furthermore, the RF front-end circuit 100 also includes a second test socket 192. The second test socket 192 is electrically connected to the second connection end 100b, and the second test socket 192 is also used to be electrically connected to a test instrument to test the performance of the main set of received signals (PRX) of the target frequency band to obtain a second test signal, and the second test signal is used to determine whether the main set of received signals of the target frequency band meets the specification requirements.

[0082] Furthermore, the RF front-end circuit 100 also includes a third test socket 193. The third test socket 193 is electrically connected to the third connection terminal 100c, and the third test socket 193 is also used to be electrically connected to a test instrument to test the performance of the diversity reception signal of the target frequency band to obtain a third test signal, and the third test signal is used to determine whether the diversity reception signal of the target frequency band meets the specification requirements.

[0083] It should be noted that the RF front-end circuit 100 also includes one of the first test socket 191, the second test socket 192, and the third test socket 193, or any combination of two or all of them. In the schematic diagram of the RF front-end circuit 100 provided in the embodiment of the present application, the RF front-end circuit 100 includes the first test socket 191, the second test socket 192, and the third test socket 193 as an example for illustration, which can be understood that it should not be understood as a limitation on the embodiment of the present application.

[0084] See also Fig. 9 , Fig. 9 for Figure 8A specific circuit diagram of the RF front-end circuit shown in . In this embodiment, the microstrip coupler 150 has an input terminal 150a, a load terminal 150b, an output terminal 150c and a feedback terminal 150d. Accordingly, the RF front-end circuit 100 also includes a load R. The input terminal 150a is electrically connected to the first filter output terminal 130b of the first filter 130. The load terminal 150b is electrically connected to the load R to the ground. The output terminal 150c is electrically connected to the first connection terminal 100a. In this embodiment, the RF front-end circuit 100 also includes a first test socket 191, and the output terminal 150c is electrically connected to the first connection terminal 100a through the first test socket 191. It can be understood that when the RF front-end circuit 100 does not include the first test socket 191, the output terminal 150c is directly electrically connected to the first connection terminal 100a. The feedback terminal 150d is electrically connected to the RF transceiver 110. The microstrip coupler 150 is used to detect the power of the target transmission signal to obtain a detection signal. The detection signal is output to the RF transceiver 110 via the feedback terminal 150 d , and the RF transceiver 110 controls the transmission power of the original transmission signal according to the detection signal.

[0085] The resistor R is a matching resistor, which is used to ensure that the detection signal is output via the feedback terminal 150d and to ensure the accuracy of the detection signal. The resistance value of the resistor R may be, but is not limited to, 50 ohms.

[0086] For other parts of the structure of the RF front-end circuit 100, please refer to Figure 8 The description of its implementation method will not be repeated here. It can be understood that Fig. 9 The RF front-end circuit 100 shown is Figure 8 The circuit diagram of one embodiment of the circuit block diagram of the RF front-end circuit 100 in the implementation should not be understood as a limitation on the RF front-end circuit 100 provided in the implementation of the present application. In other implementations, the specific circuit structure of each part in the RF front-end circuit 100 can be other structures.

[0087] In summary, when the target frequency band is a low frequency band, the RF front-end circuit 100 provided in one embodiment of the present application can increase the power of the transmitted signal in the low frequency band (also called the conducted power) by 1.5 dB, or about 1.5 dB (such as 1.0 dB to 1.5 dB), thereby improving the communication coverage capability of the RF transceiver device 10 and the electronic device 1 used by the RF front-end circuit 100 in the target frequency band. It should be noted that the RF front-end circuit 100 provided in one embodiment of the present application increases the transmission power of the target frequency band, which can also be called reducing the power loss of the target frequency band.

[0088] It should be noted that the RF front-end circuit 100 provided in the embodiment of the present application is applicable not only to the low frequency band (LB), but also to the medium frequency band (MB), or the high frequency band (HB), or the ultra-high frequency band (UHB). In other words, the target frequency band can be the low frequency band (LB), and can also be the medium frequency band (MB), or the high frequency band (HB), or the ultra-high frequency band (UHB).

[0089] In one implementation, the target frequency band may be, but is not limited to, one of the B5 frequency band, the B8 frequency band, the B20 frequency band, and the B28 frequency band.

[0090] The above is part of the implementation methods of the present application. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principles of the present application. These improvements and modifications are also considered to be within the scope of protection of the present application.

Claims

1. A radio frequency front-end circuit, characterized in that: The RF front-end circuit has a first connection end, and the first connection end is used to electrically connect to a first radiator. The RF front-end circuit includes: A power amplification module, the power amplification module comprising a power amplifier, the power amplification module having a first receiving pin and a first output pin, the first receiving pin being used to receive a first transmitting signal, the power amplifier being used to power amplify the first transmitting signal to obtain a second transmitting signal, and the second transmitting signal being output via the first output pin; and A first filter, wherein the first filter has a first filter input terminal and a first filter output terminal, wherein the first filter input terminal is electrically connected to a first output pin, and is used to pass a target transmission signal of a target frequency band in the second transmission signal, and filter out clutter other than the target transmission signal, and the first filter output terminal is electrically connected to the first connection terminal, and is used to output the target transmission signal, so that the first radiator transmits an electromagnetic wave signal of a target frequency band according to the target transmission signal.

2. The radio frequency front-end circuit according to claim 1, characterized in that: The insertion loss of the first filter is less than or equal to 0.8 dB.

3. The radio frequency front-end circuit according to claim 2, characterized in that: When the target frequency band is a low frequency band, the insertion loss of the first filter is less than or equal to 0.5 dB; When the target frequency band is any one of a medium frequency band, a high frequency band and an ultra-high frequency band, the insertion loss of the first filter is less than or equal to 0.8 dB.

4. The radio frequency front-end circuit according to claim 1, characterized in that: The radio frequency front end circuit also includes: A radio frequency transceiver, wherein the radio frequency transceiver has a first port, the first port is electrically connected to the first receiving pin of the power amplifier, and the first port of the radio frequency transceiver is used to output an original transmission signal, wherein the first transmission signal is obtained according to the original transmission signal; a microstrip coupler, one end of which is connected to the first filter output end, the other end of which is electrically connected to the first connection end, and the microstrip coupler is used to detect the power of the target transmission signal to obtain a detection signal; The radio frequency transceiver controls the transmission power of the original transmission signal according to the detection signal.

5. The radio frequency front-end circuit according to claim 4, characterized in that: The radio frequency front end circuit also includes: A second filter, wherein the second filter has a second filter input terminal and a second filter output terminal, the second filter input terminal is electrically connected to the first port, the second filter output terminal is electrically connected to the first receiving pin, and the second filter is used to filter the original transmission signal to obtain the first transmission signal.

6. The radio frequency front-end circuit according to claim 4, characterized in that: The first transmitted signal is the original signal.

7. The radio frequency front-end circuit according to claim 1, characterized in that: The target frequency band includes one of a low frequency, a medium frequency, a high frequency, and an ultra-high frequency.

8. The radio frequency front-end circuit according to claim 1, characterized in that: The target frequency band includes any one of 3G, 4G, and 5G.

9. The radio frequency front-end circuit according to any one of claims 4 to 6, characterized in that: The RF transceiver also has a second port; the RF front-end circuit also has a second connection end, and the second connection end is used to electrically connect to a second radiator to receive the main set of receiving signals of the target frequency band; The power amplification module further comprises a second receiving pin and a second output pin, wherein the second receiving pin is electrically connected to the second connection end, and the second output pin is electrically connected to the second port; The power amplifier module also includes a low noise amplifier, one end of the low noise amplifier is electrically connected to the second receiving pin, and the other end of the low noise amplifier is electrically connected to the second output pin. The low noise amplifier is used to amplify the main set receiving signal and output it to the RF transceiver via the second output end and the second port.

10. The radio frequency front-end circuit according to claim 9, characterized in that: The RF front-end circuit also has a third connection end, and the third connection end is used to electrically connect to a third radiator to receive the diversity reception signal of the target frequency band; The power amplification module further comprises a third receiving pin and a third output pin, wherein the third receiving pin is electrically connected to the third connection end, and the third output pin is electrically connected to the third receiving pin; The RF transceiver also includes a third port, and the RF front-end circuit also includes a receiving module, one end of the receiving module is electrically connected to the third output pin, the receiving module is used to filter and amplify the diversity reception signal, and the other end of the receiving module is electrically connected to the third port.

11. A radio frequency transceiver, characterized in that: The radio frequency transceiver comprises: a first radiator; and A radio frequency front-end circuit as described in any one of claims 1 to 10.

12. An electronic device, characterized in that: The electronic device comprises the radio frequency transceiver as claimed in claim 11.

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