Novel substrate and oxide semiconductor field effect transistor thereof

Abstract

The invention discloses a novel substrate and an oxide semiconductor field effect transistor thereof, the novel substrate is formed by injecting aluminum ions into gallium arsenide, the injection energy of the aluminum ions is 100-1000 KeV, the injection concentration of hydrogen ions is 1.00 E + 12-9.00 E + 14, and the injection temperature of the aluminum ions is 35-350 DEG C. The oxide semiconductor field effect transistor comprises the novel substrate, a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer and a contact layer. Experiments show that compared with an existing oxide semiconductor field effect transistor, the oxide semiconductor field effect transistor has the advantages that the power consumption can be effectively reduced by 20-30%, the electric conduction efficiency can be remarkably improved by 15-20%, and the heat conduction characteristic can be effectively enhanced, so that the service life is prolonged, and electricity is saved.

Description

Technical Field

[0001] The present invention belongs to the field of optoelectronic technology, specifically to the field of semiconductor materials, and in particular to a new substrate and an oxide semiconductor field effect transistor thereof. Background Art

[0002] Semiconductors are materials with electrical conductivity between conductors and insulators at room temperature. They are widely used in radios, televisions, computers, and mobile phones. For example, diodes are devices made of semiconductors. The core units in most electronic products are closely related to semiconductors. Common semiconductor materials include silicon, germanium, gallium arsenide, etc. Oxide semiconductor field effect transistors (MOSFETs) are widely used semiconductors. Oxide semiconductor field effect transistors use gallium arsenide semiconductor materials as substrates. Due to their high modulation speed, two-dimensional array integration to achieve high-power output, easy and efficient coupling with optical fibers, high-efficiency on-wafer testing, and low manufacturing costs, they have become important devices for data transmission and three-dimensional identification systems, and are widely used in optical communications, precision machining, advanced manufacturing equipment, test instruments, scientific research and other fields.

[0003] However, existing oxide semiconductor field effect transistors generally have problems such as high power consumption, low electrical conduction efficiency, and low precision, which seriously restrict the future development of electronic products. In order to solve these problems, this patent will study a new substrate and its oxide semiconductor field effect transistor, thereby improving the performance of the gallium arsenide substrate of the oxide semiconductor field effect transistor to solve the above technical problems. Summary of the invention

[0004] In order to effectively solve the above technical problems, the present invention provides a new substrate in scheme 1, wherein the new substrate is formed by injecting aluminum ions into gallium arsenide, the aluminum ion injection energy is 100KeV~1000KeV, the hydrogen ion injection concentration is 1.00E+12~9.00E+14, and the aluminum ion injection temperature is ˇ35℃~350℃.

[0005] Preferably, the hydrogen ion implantation energy is 100 KeV to 120 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

[0006] Preferably, the aluminum ion implantation energy is 120 KeV to 150 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

[0007] Preferably, the aluminum ion implantation energy is 200 KeV to 300 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

[0008] Preferably, the aluminum ion implantation energy is 350KeV to 450KeV, and the aluminum ion implantation concentration is 1.00E+13 to 9.00E+13.

[0009] Preferably, the aluminum ion implantation energy is 500KeV to 700KeV, and the aluminum ion implantation concentration is 1.00E+12 to 9.00E+12.

[0010] Preferably, the aluminum ion implantation energy is 800KeV to 1000KeV, and the aluminum ion implantation concentration is 1.00E+12 to 9.00E+12.

[0011] Option 2, an oxide semiconductor field effect transistor, includes a new substrate in Option 1 and its preferred option, and also includes a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer, and a contact layer. The first Bragg reflection layer, the isolation layer, the second Bragg reflection layer, and the contact layer are all located on one side of the new substrate and are distributed in sequence in a direction away from the new substrate.

[0012] The beneficial effects of the present invention are:

[0013] (1) The oxide semiconductor field effect transistor of the present invention can effectively reduce power consumption by 20-30% compared with the existing oxide semiconductor field effect transistor.

[0014] (2) The oxide semiconductor field effect transistor of the present invention can significantly increase the conduction efficiency by 15-20% compared with the existing oxide semiconductor field effect transistor.

[0015] (3) Compared with the existing oxide semiconductor field effect transistor, the oxide semiconductor field effect transistor of the present invention can effectively enhance the thermal conductivity, so that the temperature of the oxide semiconductor field effect transistor of the present invention is reduced by 1.5° C., thereby increasing the service life.

[0016] (4) Compared with the existing oxide semiconductor field effect transistor, the transmitter accuracy of the present invention is significantly improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to better express the technical solution of the present invention, the present invention will be described with drawings as follows:

[0018] Figure 1 Structural diagram of embodiment 7;

[0019] Explanation of the accompanying drawings: 1. novel substrate, 2. first Bragg reflection layer, 3. isolation layer, 4. second Bragg reflection layer, 5. contact layer. DETAILED DESCRIPTION

[0020] The preferred embodiments of the present invention are described below with reference to the accompanying drawings. It should be understood by those skilled in the art that these embodiments are only used to explain the technical principles of the present invention and are not intended to limit the protection scope of the present invention.

[0021] It should be noted that, in the description of the present invention, terms such as "up", "down", "left", "right", "inside", "outside", "front", and "back" indicating directions or positional relationships are based on the directions or positional relationships shown in the drawings. This is merely for the convenience of description and does not indicate or imply that the device or element must have a specific orientation, be constructed and operated in a specific orientation. Therefore, it should not be understood as a limitation on the present invention.

[0022] Embodiment 1 Oxide semiconductor field effect transistor, a new type of substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 100KeV, the aluminum ion injection concentration is 5.00E+14, and the aluminum ion injection temperature is 5°C to 35°C.

[0023] Embodiment 2, a novel substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 100KeV, the aluminum ion injection concentration is 4.00E+14, and the hydrogen ion injection temperature is 35°C to 350°C.

[0024] Embodiment 3, a novel substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 200KeV, the aluminum ion injection concentration is 2.00E+14, and the hydrogen ion injection temperature is 35°C to 350°C.

[0025] Embodiment 4, a novel substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 350KeV, the aluminum ion injection concentration is 1.00E+13, and the aluminum ion injection temperature is 35°C to 350°C.

[0026] Embodiment 5, a novel substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 600KeV, the aluminum ion injection concentration is 8.00E+12, and the aluminum ion injection temperature is 35°C to 350°C.

[0027] Embodiment 6, a novel substrate, the substrate is formed by injecting aluminum ions into gallium arsenide. In this embodiment, the aluminum ion injection energy is 800KeV, the aluminum ion injection concentration is 5.00E+12, and the aluminum ion injection temperature is 35°C to 350°C.

[0028] Embodiment 7, an oxide semiconductor field effect transistor, includes the new substrate 1 in the above embodiment, and also includes a first Bragg reflection layer 2, an isolation layer 3, a second Bragg reflection layer 4, and a contact layer 5. The first Bragg reflection layer 2, the isolation layer 3, the second Bragg reflection layer 4, and the contact layer 5 are all located on one side of the new substrate 1 and are distributed in sequence in a direction away from the new substrate 1.

[0029] Embodiment 8, a three-dimensional identification system, includes a transmitter module and a receiver module, the transmitter module includes the oxide semiconductor field effect transistor, wafer-level optical element and binary optical device of embodiment 7; the receiver module includes an infrared filter, a lens and an infrared sensing module; the wafer-level optical element, the binary optical device, the infrared filter, the lens and the infrared sensing module are all existing products.

[0030] The above-mentioned embodiments only express several implementation methods of the present invention, and the description is relatively specific and detailed, but it cannot be understood as limiting the scope of the invention patent. It should be pointed out that for ordinary technicians in this field, several modifications and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention.

Claims

1. A novel substrate, characterized in that: The novel substrate is formed by injecting aluminum ions into gallium arsenide, the aluminum ion injection energy is 100KeV-1000KeV, the aluminum ion injection concentration is 1.00E+12-9.00E+14, and the aluminum ion injection temperature is 35°C-350°C.

2. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 100 KeV to 120 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

3. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 120 KeV to 150 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

4. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 200 KeV to 300 KeV, and the aluminum ion implantation concentration is 1.00E+14 to 9.00E+14.

5. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 350KeV to 450KeV, and the aluminum ion implantation concentration is 1.00E+13 to 9.00E+13.

6. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 500KeV to 700KeV, and the aluminum ion implantation concentration is 1.00E+12 to 9.00E+12.

7. A novel substrate according to claim 1, characterized in that: The aluminum ion implantation energy is 800KeV to 1000KeV, and the aluminum ion implantation concentration is 1.00E+12 to 9.00E+12.

8. An oxide semiconductor field effect transistor, characterized in that: A novel substrate comprising any one of claims 1 to 7, further comprising a first Bragg reflection layer, an isolation layer, a second Bragg reflection layer, and a contact layer, wherein the first Bragg reflection layer, the isolation layer, the second Bragg reflection layer, and the contact layer are all located on one side of the novel substrate and are distributed in sequence in a direction away from the novel substrate.

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