Micro-structure internal temperature distribution detection system and detection method

Abstract

The invention provides a micro-structure internal temperature distribution detection system and detection method, and belongs to the technical field of temperature detection. On the basis of the principle that thermal expansion causes density change, expressions of the internal temperature and phase shift of the micro structure are deduced, internal temperature distribution is reflected by detecting the phase shift of the micro structure through X-rays, and nondestructive testing of the internal temperature of the micro structure can be achieved.

Description

Technical Field

[0001] The present invention belongs to the technical field of temperature detection, and in particular relates to a system and method for detecting temperature distribution inside a microstructure. Background Art

[0002] Measuring the internal temperature of tiny structures has always been a difficult problem, and there is no particularly good method at present. If the method of placing a thermocouple inside a tiny structure is used for detection, the surface structure of the tiny structure needs to be destroyed, such as drilling a hole on the surface of the tiny structure to place a thermocouple, etc. This is a destructive test and will cause holes to form on the surface or inside the sample, which may affect the physical, mechanical or chemical properties of the sample; if traditional infrared thermal imaging technology is used, since it is based on infrared light temperature detection, although it can meet non-destructive testing, it can only detect the surface temperature of the tiny structure, and cannot detect the internal temperature of the structure.

[0003] Therefore, it is necessary to provide a system and method for detecting temperature distribution inside a microstructure to solve the above problems. Summary of the invention

[0004] The present invention provides a system and method for detecting temperature distribution inside a microstructure, which utilizes density changes caused by thermal expansion of the microstructure to detect temperature changes, thereby realizing non-destructive detection of the internal temperature of the microstructure and effectively solving at least one technical problem in the background technology.

[0005] In order to solve the above-mentioned technical problems, the present invention is achieved as follows:

[0006] A system for detecting temperature distribution inside a microstructure comprises a stage, an X-ray emitter, a first thin wafer, a second thin wafer, a third thin wafer, a fourth thin wafer and a CCD imager, wherein the stage is used to place the microstructure to be detected, the X-ray emitter is used to emit X-rays, the emitted X-rays propagate toward the first thin wafer, are refracted after passing through the first thin wafer, and are divided into two paths of X-rays, wherein one path of X-rays propagates toward the second thin wafer, penetrates the microstructure after being refracted by the second thin wafer, and propagates toward the fourth thin wafer; the other path of X-rays propagates toward the third thin wafer, is refracted by the third thin wafer, and propagates toward the fourth thin wafer; the two paths of X-rays interfere with each other through the fourth thin wafer to obtain two interference patterns; the CCD imager is used to capture the two interference patterns, and analyze the phase shift of the microstructure caused by temperature change by the intensity change of the interference patterns.

[0007] As a preferred improvement, the stage includes a column and a cantilever, the column is placed on the ground or a work surface, the cantilever is fixed to the column, the cantilever is suspended horizontally, and the microstructure to be detected is placed on the cantilever.

[0008] As a preferred improvement, the first thin wafer, the second thin wafer, the third thin wafer, and the fourth thin wafer are kept parallel and spaced apart, and the first thin wafer and the second thin wafer are packaged on a first mounting board; the third thin wafer and the fourth thin wafer are packaged on a second mounting board, and the first mounting board and the second mounting board are located on opposite sides of the microstructure.

[0009] As a preferred improvement, the X-ray emitter is located on a side of the first mounting plate away from the microstructure and is spaced apart from the first mounting plate; the CCD imager is located on a side of the second mounting plate away from the microstructure and is spaced apart from the second mounting plate.

[0010] As a preferred improvement, the X-rays emitted by the X-ray emitter are polychromatic X-ray beams; and the sub-X-rays are monochromatic X-ray beams.

[0011] As a preferred improvement, the relationship between the temperature dT and the phase shift dp inside the microstructure is expressed as:

[0012]

[0013] Where λ is the wavelength of X-rays; r e is the classical electron radius; N A is Avogadro's constant; c is the thermal expansion coefficient of the microstructure.

[0014] A detection method based on the above-mentioned microstructure internal temperature distribution detection system comprises the following steps:

[0015] Step S1, placing the microstructure to be measured on the stage;

[0016] Step S2, starting the X-ray emitter to emit X-rays, the emitted X-rays propagate toward the first thin wafer, are refracted after passing through the first thin wafer, and are divided into two paths of X-rays, one of which propagates toward the second thin wafer, penetrates the microstructure after being refracted by the second thin wafer, and propagates toward the fourth thin wafer; the other path of X-rays propagates toward the third thin wafer, is refracted by the third thin wafer, and propagates toward the fourth thin wafer; the two paths of X-rays interfere with each other after passing through the fourth thin wafer, and two interference patterns are obtained;

[0017] Step S3, using the CCD imager to capture two interference patterns, and analyzing the interference patterns to obtain intensity changes of two-path X-rays;

[0018] Step S4, using the conversion relationship between temperature and phase shift, convert and obtain the temperature distribution result inside the microstructure.

[0019] The beneficial effects of the present invention are:

[0020] (1) Based on the principle that thermal expansion causes density change, the expressions of the temperature and phase shift inside the microstructure are derived. The internal temperature distribution can be detected by detecting the phase shift of the microstructure with X-rays, which can realize non-destructive detection of the internal temperature of the microstructure.

[0021] (2) Splitting the detection X-rays into two beams and interfering them before and after the sample can more accurately detect the phase changes caused by the sample and provide higher phase resolution, thereby improving the accuracy of temperature and density measurements. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the following briefly introduces the drawings required for describing the embodiments. Obviously, the drawings described below are only some embodiments of the present invention. For those skilled in the art, other drawings can be obtained based on these drawings without creative work, among which:

[0023] Figure 1 A three-dimensional structural diagram showing a system for detecting temperature distribution inside a microstructure provided in Example 1;

[0024] Figure 2 A flow chart showing a method for detecting temperature distribution inside a microstructure provided in Example 2;

[0025] Figure 3 A comparison diagram showing the temperature change curves of the theoretical group and the actual group at position a on the micro-smoking device in Example 3;

[0026] Figure 4 A comparison diagram showing the temperature change curves of the theoretical group and the actual group at the position b on the micro smoking device in Example 3;

[0027] Figure 5 A comparison diagram of the temperature change curves of the theoretical group and the actual group at point c on the micro smoking device in Example 3. DETAILED DESCRIPTION

[0028] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of them. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0029] Example 1

[0030] like Figure 1As shown, this embodiment provides a microstructure internal temperature distribution detection system 100, including a stage 10, an X-ray emitter 20, a first thin wafer 30, a second thin wafer 40, a third thin wafer 50, a fourth thin wafer 60 and a CCD imager 70.

[0031] The stage 10 is used to place the microstructure 200 to be detected. Specifically, the stage 10 includes a column 11 and a cantilever 12. The column 11 is placed on the ground or a work surface. The cantilever 12 is fixed to the column 11. The cantilever 12 is suspended horizontally, and the microstructure 200 to be detected is placed on the cantilever 12.

[0032] The first thin wafer 30, the second thin wafer 40, the third thin wafer 50, and the fourth thin wafer 60 are kept in parallel and spaced apart, and the first thin wafer 30 and the second thin wafer 40 are packaged on a first mounting board 80; the third thin wafer 50 and the fourth thin wafer 60 are packaged on a second mounting board 90, and the first mounting board 80 and the second mounting board 90 are located on opposite sides of the microstructure 200.

[0033] The X-ray emitter 20 is located on a side of the first mounting plate 80 away from the microstructure 200 and is spaced apart from the first mounting plate 80 ; the CCD imager 70 is located on a side of the second mounting plate 90 away from the microstructure 200 and is spaced apart from the second mounting plate 90 .

[0034] The X-ray emitter 20 is used to emit X-rays, and the emitted X-rays propagate toward the first thin wafer 30, are refracted after passing through the first thin wafer 30, and are divided into two paths of X-rays, one of which propagates toward the second thin wafer 40, penetrates the microstructure 200 after being refracted by the second thin wafer 40, and propagates toward the fourth thin wafer 60; the other path of X-rays propagates toward the third thin wafer 50, is refracted by the third thin wafer 50, and propagates toward the fourth thin wafer 60; the two paths of X-rays interfere with each other through the fourth thin wafer 60 to obtain two interference patterns; the CCD imager 70 is used to capture the two interference patterns, and analyze the phase shift of the microstructure 200 caused by temperature change by the intensity change of the interference pattern.

[0035] Taking an example to more clearly illustrate the contents of this embodiment, the propagation path of the X-rays emitted by the X-ray emitter 20 is defined as an original path, the first thin wafer 30 is located on the original path, and is tilted relative to the first path, and the tilt angle is an acute angle. The first thin wafer 30 converts the polychromatic X-rays emitted by the X-ray emitter 20 into two monochromatic sub-X-rays through a specific crystal structure, and the propagation paths of the two sub-X-rays are defined as a first path and a second path, respectively. The second thin wafer 40 and the fourth thin wafer 60 are located on the first path; the third thin wafer 50 and the fourth thin wafer 60 are located on the second path; the two monochromatic X-rays are refracted and changed in propagation direction by the second thin wafer 40 and the third thin wafer 50, respectively, so that the two monochromatic X-rays can converge to the fourth thin wafer 60, and interfere with each other through the fourth thin wafer 60. The fourth thin wafer 60 is used to detect the intensity change in the interference light beam, and finally reflected in the interference pattern. It can be understood that the original path is a straight line, the first path and the second path are broken lines, and the inflection points of the broken lines are located on the second thin wafer 40 and the third thin wafer 50 respectively.

[0036] The detection principle of a microstructure internal temperature distribution detection system 100 provided by the present invention is:

[0037] When X-rays pass through a thin wafer, the complex refractive index n is expressed as:

[0038] n=1-δ+iβ;

[0039] Where δ and β are the real and imaginary parts of the complex refractive index n, respectively; i is an imaginary number;

[0040] in:

[0041]

[0042] Where: λ is the wavelength of X-rays; r e is the classical electron radius; m j is the number of atoms in the unit cell; Z j is the number of atoms of the jth element; f′ and f″ are the real and imaginary parts of the anomalous dispersion of the atomic scattering factor, respectively;

[0043]

[0044] Where: N A is Avogadro's constant; ρ is the electron density; x j is the ratio of the jth element; M j is the number of atoms of the jth element;

[0045] The specific expression of the phase shift dp caused by temperature change of the microstructure 200 with a thickness of t is as follows:

[0046]

[0047] When the temperature inside the microstructure 200 changes, its volume also changes based on the principle of thermal expansion. The volume V that changes with temperature dT can be approximated as:

[0048] V = V0 (1 + cdT);

[0049] Wherein: V0 is the initial volume of the microstructure 200; c is the thermal expansion coefficient of the microstructure 200;

[0050] Using the relationship between volume and density The conversion gives the relationship between temperature dT and phase shift dp, expressed as:

[0051]

[0052] Based on the principle of thermal expansion, there is a corresponding relationship between the density of a tiny structure and its internal temperature. When the temperature changes, the density changes and the volume changes accordingly. Using density as a bridge, a relationship between temperature dT and phase shift dp is constructed. By detecting the phase shift dp to reflect the internal temperature distribution of the tiny structure, non-destructive detection of the internal temperature of the tiny structure can be achieved.

[0053] Example 2

[0054] like Figure 2 As shown, this embodiment provides a method for detecting temperature distribution inside a microstructure, comprising the following steps:

[0055] Step S1, placing the microstructure to be measured on the stage;

[0056] Step S2, starting the X-ray emitter to emit X-rays, the emitted X-rays propagate toward the first thin wafer, are refracted after passing through the first thin wafer, and are divided into two paths of X-rays, one of which propagates toward the second thin wafer, penetrates the microstructure after being refracted by the second thin wafer, and propagates toward the fourth thin wafer; the other path of X-rays propagates toward the third thin wafer, is refracted by the third thin wafer, and propagates toward the fourth thin wafer; the two paths of X-rays interfere with each other after passing through the fourth thin wafer, and two interference patterns are obtained;

[0057] Step S3, using the CCD imager to capture two interference patterns, and analyzing the interference patterns to obtain intensity changes of two-path X-rays;

[0058] Step S4, using the conversion relationship between temperature and phase shift, convert and obtain the temperature distribution result inside the microstructure.

[0059] Example 3

[0060] This embodiment sets up a comparative test to verify the reliability of the method for detecting the temperature distribution inside a microstructure provided in Example 2. Taking a micro-smoking device as the research object, the method for detecting the temperature distribution inside a micro-structure provided in Example 2 is used to detect the theoretical temperature change inside the micro-smoking device, and a theoretical temperature change curve (theoretical group) is obtained, which is compared with the actual temperature change curve under the heating temperature field (experimental group). Three random positions a, b, and c on the micro-smoking device are taken as sample points, and the temperature change curves of the theoretical group and the experimental group are plotted, as shown in FIG. Figure 3-Figure 5 As shown. Figure 3-Figure 5 It can be seen that after 200s, the temperature of the theoretical group and the experimental group began to drop at the same speed. The maximum relative error between theory and experiment is 12.4%, and the relative error is less than 5%, which proves the reliability of the method provided in Example 2 and can be used for the detection of temperature distribution inside microstructures.

[0061] The embodiments of the present invention are described above in conjunction with the accompanying drawings, but the present invention is not limited to the above-mentioned specific implementation modes, which are merely illustrative rather than restrictive. Under the guidance of the present invention, ordinary technicians in this field can also make many forms without departing from the scope of protection of the present invention and the claims, all of which are within the protection of the present invention.

Claims

1. A system for detecting temperature distribution inside a microstructure, characterized in that: The invention comprises an object stage, an X-ray emitter, a first thin wafer, a second thin wafer, a third thin wafer, a fourth thin wafer and a CCD imager, wherein the object stage is used to place a microstructure to be detected, the X-ray emitter is used to emit X-rays, the emitted X-rays propagate toward the first thin wafer, are refracted after passing through the first thin wafer, and are divided into two paths of X-rays, one of which propagates toward the second thin wafer, penetrates the microstructure after being refracted by the second thin wafer, and propagates toward the fourth thin wafer; the other path of X-rays propagates toward the third thin wafer, is refracted by the third thin wafer, and propagates toward the fourth thin wafer; the two paths of X-rays interfere with each other through the fourth thin wafer to obtain two interference patterns; the CCD imager is used to capture the two interference patterns, and analyze the phase shift of the microstructure caused by temperature change by the intensity change of the interference patterns.

2. The microstructure internal temperature distribution detection system according to claim 1, characterized in that: The stage comprises a column and a cantilever, wherein the column is placed on the ground or a work surface, and the cantilever is fixed to the column. The cantilever is suspended horizontally, and the microstructure to be detected is placed on the cantilever.

3. The microstructure internal temperature distribution detection system according to claim 1, characterized in that: The first thin wafer, the second thin wafer, the third thin wafer and the fourth thin wafer are kept in parallel and spaced apart, the first thin wafer and the second thin wafer are packaged on a first mounting board; the third thin wafer and the fourth thin wafer are packaged on a second mounting board, and the first mounting board and the second mounting board are located on opposite sides of the microstructure.

4. The microstructure internal temperature distribution detection system according to claim 3, characterized in that: The X-ray emitter is located on a side of the first mounting plate away from the microstructure and is spaced apart from the first mounting plate; the CCD imager is located on a side of the second mounting plate away from the microstructure and is spaced apart from the second mounting plate.

5. The microstructure internal temperature distribution detection system according to claim 1, characterized in that: The X-rays emitted by the X-ray emitter are polychromatic X-ray beams; and the sub-X-rays are monochromatic X-ray beams.

6. The microstructure internal temperature distribution detection system according to claim 1, characterized in that: The relationship between the temperature dT and the phase shift dp inside the microstructure is expressed as: Where λ is the wavelength of X-rays; r e is the classical electron radius; N A is Avogadro's constant; c is the thermal expansion coefficient of the microstructure.

7. A detection method based on the microstructure internal temperature distribution detection system according to any one of claims 1 to 6, characterized in that: The steps include: Step S1, placing the microstructure to be measured on the stage; Step S2, starting the X-ray emitter to emit X-rays, the emitted X-rays propagate toward the first thin wafer, are refracted after passing through the first thin wafer, and are divided into two paths of X-rays, one of which propagates toward the second thin wafer, penetrates the microstructure after being refracted by the second thin wafer, and propagates toward the fourth thin wafer; the other path of X-rays propagates toward the third thin wafer, is refracted by the third thin wafer, and propagates toward the fourth thin wafer; the two paths of X-rays interfere with each other after passing through the fourth thin wafer, and two interference patterns are obtained; Step S3, using the CCD imager to capture two interference patterns, and analyzing the interference patterns to obtain intensity changes of two-path X-rays; Step S4, using the conversion relationship between temperature and phase shift, convert and obtain the temperature distribution result inside the microstructure.

Images