Low-power-consumption wide-range magnetic field sensing method based on tunnel reluctance technology

Abstract

The invention discloses a low-power-consumption wide-range magnetic field sensing method based on a tunnel reluctance technology, and relates to the technical field of wide-range magnetic field sensing, and the method comprises the steps: recognizing a demand, and carrying out the first structure setting; optimizing the proportion parameter, and setting first interference resistance; and carrying out a performance test and optimizing a sensing effect. According to the low-power-consumption wide-range magnetic field sensing method based on the tunnel magnetoresistance technology, different layers in a film stack structure are set, the pinning strength of a device in a high magnetic field is improved through interaction of the layers, and it is ensured that elements can be kept stable in large-range magnetic field changes. Defects in design and manufacturing processes are fed back based on performance tests, and response and stability of elements under actual working conditions are verified, so that comprehensive performance of measuring range, sensitivity and anti-interference capability is improved. Through the design of the magnetic shielding layer, the measuring range and the sensitivity of the sensing element are improved, and the sensing element is more suitable for being applied to scenes with high-precision and wide-measuring-range requirements.

Description

Technical Field

[0001] The present invention relates to the technical field of wide-range magnetic field sensing, and in particular to a low-power consumption wide-range magnetic field sensing method and system based on tunnel magnetoresistance technology. Background Art

[0002] Magnetic field sensing technology is widely used in scientific research, industrial control and daily electronic devices. Traditional magnetic field sensing technology is mainly represented by Hall sensors and fluxgate sensors. Although these sensors have stable performance in use, they also have significant technical limitations, especially in terms of measurement range, sensitivity and anti-interference ability. The working principle of the Hall sensor is based on the Hall effect. It converts the magnetic field into a voltage signal output. The advantages are simple structure, small size and low cost, which is suitable for low-cost and large-volume application scenarios. However, the sensitivity of the Hall sensor is usually low, easily affected by temperature, and the detection ability of high magnetic fields is insufficient, which makes it limited in wide-range and high-precision magnetic field detection applications. On the other hand, the fluxgate sensor measures the magnetic field by sensing the change of magnetic flux, has high sensitivity and resolution, and is suitable for low-field detection. However, the fluxgate sensor is usually large in size, high in power consumption, slow in response speed, and high in cost, so it is difficult to achieve portable applications. In addition, the fluxgate sensor is easily interfered by the external magnetic field and requires shielding measures to ensure accuracy. In addition to these two sensors, the AMR (anisotropic magnetoresistance) and GMR (giant magnetoresistance) sensors developed in recent years also show good sensitivity and response speed in some applications. However, AMR sensors are easily saturated under high magnetic fields, resulting in reduced sensitivity; although GMR sensors have higher sensitivity, their output is nonlinear and sensitive to temperature, which limits their application in magnetic field detection with wide range and high precision requirements. In general, these traditional magnetic field sensing technologies are difficult to balance in terms of range, accuracy, power consumption, volume, etc., and it is difficult to meet today's diverse application needs. Summary of the invention

[0003] In view of the above-mentioned problems, the present invention is proposed.

[0004] Therefore, the technical problem solved by the present invention is that the existing magnetic field sensing method has insufficient range.

[0005] Low sensitivity, weak anti-interference ability, and the problem of how to achieve high-precision measurement over a wide range.

[0006] To solve the above technical problems, the present invention provides the following technical solutions: a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology, including identifying needs and performing a first structure setting; optimizing proportional parameters and setting a first anti-interference; performing performance testing and optimizing the sensing effect.

[0007] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, the identification requirements include determining the requirements for range and power consumption.

[0008] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, wherein: the first structure setting includes setting the membrane stack structure.

[0009] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, the optimized ratio parameters include setting the range and the length-to-width ratio.

[0010] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, wherein: the setting of the first anti-interference includes setting the anti-interference to achieve linear response.

[0011] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, the performance test and optimization of the sensing effect include comparing the effects of different film systems and the influence of annealing temperature and aspect ratio on the performance of the film system.

[0012] As a preferred solution of the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology described in the present invention, the performance test and optimization of the sensing effect also include testing the response of the film system in different magnetic fields to identify the optimal film system.

[0013] Another object of the present invention is to provide a low-power wide-range magnetic field sensing system based on tunnel magnetoresistance technology, which can solve the problems of insufficient range, low sensitivity and poor anti-interference ability of current magnetic field sensing technology by adjusting the thickness of the free layer and the soft magnetic layer, the aspect ratio of the device and the annealing temperature.

[0014] As a preferred solution of the low-power wide-range magnetic field sensing system based on tunnel magnetoresistance technology described in the present invention, it includes: a structure setting module, an anti-interference module, and a performance testing module; the structure setting module is used to identify requirements and perform a first structure setting; the anti-interference module is used to optimize proportional parameters and set a first anti-interference; the performance testing module is used to perform performance testing and optimize the sensing effect.

[0015] A computer device comprises a memory and a processor, wherein the memory stores a computer program, and the processor executes the computer program to implement a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology.

[0016] A computer-readable storage medium stores a computer program, which, when executed by a processor, implements the steps of a low-power, wide-range magnetic field sensing method based on tunnel magnetoresistance technology.

[0017] Beneficial effects of the present invention: The low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided by the present invention improves the pinning strength of the device under high magnetic fields by setting different layers in the membrane stack structure, and the interaction between the layers ensures that the component can remain stable in a wide range of magnetic field changes. Based on performance testing, deficiencies in the design and manufacturing process are fed back, and the response and stability of the component under actual working conditions are verified, thereby improving the comprehensive performance of the range, sensitivity and anti-interference ability. Through the design of the magnetic shielding layer, the range and sensitivity of the sensor element are improved, which is more suitable for use in scenarios with high precision and wide range requirements. The present invention achieves better results in terms of accuracy, scope of application and stability. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other accompanying drawings can be obtained based on these accompanying drawings without paying creative work.

[0019] Figure 1 An overall flow chart of a low-power, wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided in the first embodiment of the present invention.

[0020] Figure 2 A diagram showing the influence of the soft magnetic layer thickness on the MTJ magnetoresistance characteristics of a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided in the second embodiment of the present invention.

[0021] Figure 3 A diagram showing the influence of annealing temperature on MTJ magnetoresistance characteristics of a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided in the second embodiment of the present invention.

[0022] Figure 4 A diagram showing the effect of the MTJ aspect ratio on its magnetoresistance characteristics of a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided in the second embodiment of the present invention.

[0023] Figure 5 A low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology is provided in the second embodiment of the present invention to measure the magnetoresistance characteristics of 34 film systems.

[0024] Figure 6A magnetoresistance curve after shielding of a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology provided in the second embodiment of the present invention. DETAILED DESCRIPTION

[0025] In order to make the above-mentioned purposes, features and advantages of the present invention more obvious and easy to understand, the specific implementation methods of the present invention are described in detail below in conjunction with the drawings of the specification. Obviously, the described embodiments are part of the embodiments of the present invention, but not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary persons in the art without creative work should fall within the scope of protection of the present invention.

[0026] Example 1, reference Figure 1 , as an embodiment of the present invention, provides a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology, comprising:

[0027] S1: Identify requirements and perform the first structural setting.

[0028] Furthermore, the identification requirements include determining the range and power consumption requirements. The wide range TMR element design is achieved by determining the thickness of the soft magnetic layer and the free layer, the device aspect ratio design, annealing control, and plating the shielding layer above it.

[0029] It should be noted that the membrane stack structure includes:

[0030] PtMn(20)\CoFe(2)\Ru(1)\CoFeB(2)\MgO(1)\CoFeB(1.5)\NiFe(20)\IrMn(16) structure, where PtMn(20) is the bottom antiferromagnetic pinning layer, CoFe(2)\Ru(1)\CoFeB(2) is an artificial antiferromagnetic structure to achieve more stable pinning. CoFeB(1.5)\NiFe(20) is a combination of free layer and soft magnetic layer to increase the range, and IrMn(16) pinning layer is used for orthogonal pinning to improve the stability and linearity of the film.

[0031] It should also be noted that the first structure setting can be performed by various methods, such as device aspect ratio design or free layer thickness optimization.

[0032] As a preferred embodiment, the first structure setting in this embodiment adopts a device aspect ratio design, and its principle steps are: the sensor element is designed to have an aspect ratio of 3:1, and this ratio can produce a moderate magnetic anisotropy effect on the geometric shape of the device. This effect can maintain a stable sensor output in a wide range of magnetic fields, so that the sensor element maintains a linear response in a larger range.

[0033] By adjusting the aspect ratio, the device can obtain higher measurement accuracy and range stability, while reducing the loss of sensitivity, ensuring that the sensor element can still maintain excellent linear characteristics when measuring large magnetic fields.

[0034] In another feasible embodiment, the first structure setting adopts free layer thickness optimization, and its principle steps are as follows: in the film stack structure, the magnetic performance of the sensing element is optimized by accurately controlling the thickness of the CoFeB free layer (for example, setting the free layer thickness to 2nm). A thicker free layer can enhance the magnetization stability of the element, so that the element still has a stable response under a large magnetic field strength and expands the overall range.

[0035] After optimizing the free layer thickness, the range of the sensing element is further increased, and the measurement range can be extended without significantly sacrificing sensitivity, achieving the design goal of a wide range.

[0036] The larger the free layer thickness (CoFeB), the worse the sensitivity but the wider the range. Thickening the soft magnetic layer can increase the range, but too thick will reduce the sensitivity. Increasing the aspect ratio of the device can increase the range, but too large a ratio will reduce the sensitivity. If the annealing time is too long and the temperature is too high, the range will be lost, but fast can reduce the loss. The magnetic shielding layer design is a convenient means of adjustment, which can not only increase the range but also play a role in magnetic shielding.

[0037] S2: Optimize the proportional parameters and set the first anti-interference.

[0038] Furthermore, optimizing the proportional parameters includes setting the range and the aspect ratio.

[0039] There are many ways to achieve wide range in TMR, which can be roughly divided into:

[0040] 1. Thin film composition control: free layer thickness control, soft magnetic layer thickness control. As the thickness of the soft magnetic layer increases, the measurement range increases, but there is a loss of sensitivity.

[0041] 2. Device aspect ratio design: The larger the device aspect ratio, the stronger the magnetic anisotropy caused by the shape will be, the corresponding range will be reduced, and the sensitivity will increase.

[0042] 3. Annealing control: It can optimize linearity and MR value to a certain extent. As the annealing temperature increases, its sensitivity increases, but the hysteresis becomes serious. The fixed annealing temperature is 200℃ with small hysteresis and high linearity.

[0043] 4. Permalloy magnetic shielding\convergence layer design: can proportionally increase / decrease the range and reduce / increase the sensitivity of the device.

[0044] Taking into account the sensitivity of the sensor, the following formula can be used for analysis: Where MR is the magnetoresistance of the film, Hk is the uniaxial magnetic anisotropy of the film (simplified, it is actually a nonlinear multi-term), and N is the magnification factor brought by magnetic shielding\convergence. From the formula, the sensitivity S is inversely proportional to Hk and N. Hk is roughly proportional to the saturation magnetic field of the sensor. A comprehensive analysis of the impact of various factors on the overall performance of MTJ is summarized in Table 1 below.

[0045] Table 1 Effects of different design schemes on MTJ output

[0046]

[0047] In summary, the best design should be to increase Hk as much as possible and minimize MR while ensuring the linear range. Based on this, this report controls different variables to design experiments, and the specific scheme is shown in Table 2.

[0048] Table 2 Different MTJ structure design solutions

[0049]

[0050]

[0051] Where X and Y represent the thickness of the soft magnetic layer FeNi and the free layer CoFeB, respectively, in angstroms. For different compositions and aspect ratios, films are selected. This report uses three annealing temperatures and expands three components for aspect ratios. For the convenience of subsequent descriptions, this report specifies a set of naming rules, as shown in Table 3. For example, 3301 represents a soft magnetic layer thickness of 14, a free layer thickness of 2, an aspect ratio of 3:1, and an MTJ junction annealed at 200°C.

[0052] Table 3 Different TMR chip numbers

[0053] 1:03 1:07 1:11 X14,Y1.6 / / / X30,Y1.6 1801～1803 1807～1809 1813～1815 X14,Y2 3301～3303 3307～3309 3313～3315 X30,Y2 3401～3403 3407～3409 3413～3415 X40,Y1.6 1901～1903 1907～1909 1913～1915 X40,Y2 / / /

[0054] It should be noted that through multiple experimental comparisons, the 18-film system has small hysteresis, but the sensitivity is too low. The change in the graphic structure increases the range and optimizes the linearity. In contrast, the 19-film system has a wider range, but the sensitivity is too low. The 33 and 34-film systems have better comprehensive sensitivity and range considerations. The magnetic field sensor element with a comprehensive wide range design adopts the 34-film system, and the thickness of the free layer CoFeB is determined to be 2nm, and the thickness of the soft magnetic layer NiFe is 30nm.

[0055] On this basis, by increasing the thickness of the soft magnetic layer, selecting the 34 film system, and controlling the aspect ratio, it can be found that the equivalent sensitivity of the 34 film system and the 33 film system at 200Gs is close (slightly smaller), but the 34 film system has better linearity, and its range can be further broadened through nonlinear fitting in a larger magnetic field range.

[0056] It should also be noted that the first anti-interference is set. The first anti-interference can be implemented by various methods, such as electroplating a magnetic shielding layer or using a double-layer soft magnetic layer structure.

[0057] As a preferred embodiment, in this embodiment, the first anti-interference method adopts electroplating of magnetic shielding layer, and its principle steps are as follows: electroplating a magnetic shielding layer above the MTJ junction, usually using a 20-micron thick slope film alloy. This magnetic shielding layer can effectively isolate the interference of the external magnetic field on the sensor, making the response curve of the element more stable, and at the same time play an amplifying role in the range expansion, so that the sensing element can maintain stable linearity in a wider range of magnetic fields. Through the electroplating of the magnetic shielding layer, the range magnification of the sensing element can reach about 20 times, and the sensitivity can reach 0.4mV / V / Gs, so that it can still maintain high precision and stability under strong external magnetic fields, and effectively resist unnecessary interference.

[0058] In another feasible embodiment, the first anti-interference adopts a double-layer soft magnetic layer structure, and its principle steps are: add a soft magnetic layer in the sensor element to form a double-layer soft magnetic structure. This double-layer soft magnetic layer design can further absorb the interference of the external magnetic field, so that the sensor element maintains a high linearity and accuracy in a complex magnetic field environment. At the same time, the double-layer structure can also increase the measuring range, making the sensor element more adaptable to high-intensity magnetic fields. The double-layer soft magnetic layer structure design not only improves the anti-interference ability, but also increases the measurement range of the element. This feature ensures that the sensor element can still provide stable and accurate output under high magnetic field strength to meet the needs of wide-range applications.

[0059] S3: Perform performance tests and optimize sensing effects.

[0060] Furthermore, performance testing and optimization of sensing effects include comparing the effects of different film systems and the effects of annealing temperature and aspect ratio on film system performance. Performance testing and optimization of sensing effects also include testing the response of the film system in different magnetic fields to identify the optimal film system.

[0061] After completing the design, preparation and post-processing of the sensitive body, its output response performance and noise level need to be tested. On the one hand, it can provide feedback and verification for the device design and preparation process, and on the other hand, it can evaluate the performance of the sensitive body, including the magnetoresistance change rate TMR, sensitivity, linear range, nonlinearity, noise level and resolution, etc. These performances can be obtained by testing and analyzing the magnetoresistance response curve and noise spectrum of the sensitive body. Therefore, this report designs experiments and measures the magnetic induction curve of the MTJ junction based on the relationship between the MTJ structure and linearity, sensitivity and range, and analyzes the results.

[0062] Example 2, reference Figure 2-Figure 6An embodiment of the present invention provides a low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology. In order to verify the beneficial effects of the present invention, scientific demonstration is carried out through economic benefit calculation and simulation experiments.

[0063] First, the effect of the soft magnetic layer thickness on the MTJ performance was tested. The results are as follows Figure 2 As shown, it can be found that the hysteresis of the 18 film system is small, but the sensitivity is too low. The change of the graphic structure increases the range and optimizes the linearity. In contrast, the range of the 19 film system is wider, but the sensitivity is too low. On this basis, multiple groups of film systems were tested separately, and it was found that the 33 and 34 film systems have better comprehensive sensitivity and range considerations. Therefore, the 33 film system was selected to study the effects of annealing temperature and aspect ratio on MTJ performance. First, the annealing temperature was controlled, and the results are shown in Figure 3 As shown, it can be found that the sensitivity of 3301-3303 increases with the increase of annealing temperature, but the hysteresis becomes serious. In general, although the comprehensive sensitivity of 3301 is not as good as 3302, its value is more stable, the hysteresis is small, and the range can be partially expanded through the fitting curve. The sensitivity of 3302 is higher, and the hysteresis of 3303 is too serious. Summarizing the above data, it can be concluded that the appropriate annealing temperature can improve the crystallization of the material and the pinning strength, thereby improving the sensitivity of the sensor, but too high a temperature may increase the hysteresis.

[0064] On this basis, the effect of aspect ratio on MTJ performance was studied. The 33 film system was still selected and the annealing temperature was 200℃. The results are as follows Figure 4 As shown, the gain effect of increasing the aspect ratio of the 33 film system is not obvious, but hysteresis and asymmetry are generated. In this regard, the present invention analyzes that the 33 film system is close to the saturation field, and the linear range is close to the saturation field. The pattern change may affect the hysteresis but has little effect on the range improvement.

[0065] On this basis, the present invention increases the thickness of the soft magnetic layer, selects the 34 film system, and still controls the aspect ratio to obtain the following results: Figure 5 As shown, it can be found that the equivalent sensitivity of the 34 film system and the 33 film system at 200Gs is close (slightly smaller), and the linearity is better. It may be possible to further broaden the range through nonlinear fitting in a larger magnetic field range.

[0066] Based on the above analysis, this report selects the 34 film system, and selects the optimal sensitivity aspect ratio 3401, and fixes the annealing temperature to 200℃ with small hysteresis and high linearity, and performs layout design and annealing magnetization. In addition, it can be found that although the thickness control of the soft magnetic layer can increase the range, due to its loss of sensitivity, the comprehensive result is not as good as directly increasing the range through magnetic shielding. The present invention introduces a magnetic shielding part for the 34 film system MTJ, electroplates it above the MTJ junction, and tests its magnetoresistance response. The results are as follows Figure 6As shown in the figure, it is almost difficult to have high linearity within the range of 200GS without using a shielding layer, but this device has a range magnification of about 20 and a sensitivity of about 0.4mV / V / Gs under a 20um slope film alloy. Its linearity reaches 1% within the range of 200Gs and 2.5% within the range of 300Gs.

[0067] Embodiment 3, an embodiment of the present invention, provides a low-power wide-range magnetic field sensing system based on tunnel magnetoresistance technology, including a structure setting module, an anti-interference module, and a performance testing module.

[0068] The structure setting module is used to identify the requirements and perform the first structure setting. The anti-interference module is used to optimize the ratio parameters and set the first anti-interference. The performance test module is used to perform performance testing and optimize the sensing effect.

[0069] If the function is implemented in the form of a software functional unit and sold or used as an independent product, it can be stored in a computer-readable storage medium. Based on this understanding, the technical solution of the present invention, or the part that contributes to the prior art, or the part of the technical solution, can be embodied in the form of a software product. The computer software product is stored in a storage medium, including several instructions for a computer device (which can be a personal computer, server, or network device, etc.) to perform all or part of the steps of the methods of each embodiment of the present invention. The aforementioned storage medium includes: U disk, mobile hard disk, read-only memory (ROM, Read-Only Memory), random access memory (RAM, Random Access Memory), disk or optical disk, etc. Various media that can store program codes.

[0070] The logic and / or steps represented in the flowchart or otherwise described herein, for example, can be considered as an ordered list of executable instructions for implementing logical functions, and can be embodied in any computer-readable medium for use by an instruction execution system, device or apparatus (such as a computer-based system, a system including a processor, or other system that can fetch instructions from an instruction execution system, device or apparatus and execute instructions), or in conjunction with such instruction execution systems, devices or apparatuses. For the purposes of this specification, "computer-readable medium" can be any device that can contain, store, communicate, propagate or transmit a program for use by an instruction execution system, device or apparatus, or in conjunction with such instruction execution systems, devices or apparatuses.

[0071] More specific examples of computer-readable media (a non-exhaustive list) include the following: an electrical connection with one or more wires (electronic device), a portable computer disk case (magnetic device), a random access memory (RAM), a read-only memory (ROM), an erasable and programmable read-only memory (EPROM or flash memory), an optical fiber device, and a portable compact disk read-only memory (CDROM). In addition, the computer-readable medium may even be a paper or other suitable medium on which the program is printed, since the program may be obtained electronically, for example, by optically scanning the paper or other medium, followed by editing, deciphering, or processing in another suitable manner as necessary, and then stored in a computer memory.

[0072] It should be understood that the various parts of the present invention can be implemented by hardware, software, firmware or a combination thereof. In the above-mentioned embodiments, multiple steps or methods can be implemented by software or firmware stored in a memory and executed by a suitable instruction execution system. For example, if implemented by hardware, as in another embodiment, it can be implemented by any one of the following technologies known in the art or their combination: a discrete logic circuit having a logic gate circuit for implementing a logic function for a data signal, a dedicated integrated circuit having a suitable combination of logic gate circuits, a programmable gate array (PGA), a field programmable gate array (FPGA), etc. It should be noted that the above embodiments are only used to illustrate the technical solution of the present invention and are not limited. Although the present invention is described in detail with reference to the preferred embodiments, it should be understood by those skilled in the art that the technical solution of the present invention can be modified or replaced by equivalents without departing from the spirit and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

[0073] It should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred embodiments, those skilled in the art should understand that the technical solutions of the present invention may be modified or replaced by equivalents without departing from the spirit and scope of the technical solutions of the present invention, which should all be included in the scope of the claims of the present invention.

Claims

1. A low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology, characterized in that: include: Identify requirements and set the first structure; Optimize the proportional parameters and set the first anti-interference; Perform performance tests and optimize sensing results.

2. The low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 1, characterized in that: The identifying requirements include determining range and power consumption requirements.

3. The low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 2, characterized in that: The performing the first structure setting includes setting the membrane stack structure.

4. The low-power, wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 3, characterized in that: The optimized ratio parameters include setting the measurement range and the length-to-width ratio.

5. The low-power, wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 4, characterized in that: The setting of the first anti-interference includes setting the anti-interference to achieve a linear response.

6. The low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 5, characterized in that: The performance test and optimization of the sensing effect include comparing the effects of different film systems and the influence of annealing temperature and aspect ratio on the performance of the film system.

7. The low-power, wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in claim 6, characterized in that: The performance test and optimization of the sensing effect also include testing the response of the film system in different magnetic fields to identify the optimal film system.

8. A system using the low-power wide-range magnetic field sensing method based on tunnel magnetoresistance technology as claimed in any one of claims 1 to 7, characterized in that: Including structure setting module, anti-interference module and performance testing module; The structure setting module is used to identify requirements and perform first structure setting; The anti-interference module is used to optimize the proportional parameters and set the first anti-interference; The performance testing module is used to perform performance testing and optimize the sensing effect.

9. A computer device comprising a memory and a processor, wherein the memory stores a computer program, wherein: When the processor executes the computer program, the steps of the low-power, tunnel magnetoresistance-based, wide-range magnetic field sensing method according to any one of claims 1 to 7 are implemented.

10. A computer-readable storage medium having a computer program stored thereon, characterized in that: When the computer program is executed by a processor, the steps of the low-power, tunnel magnetoresistance-based, wide-range magnetic field sensing method according to any one of claims 1 to 7 are implemented.

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