Beam deflection state switching device, antenna and electronic equipment

Abstract

The embodiment of the invention relates to the technical field of antennas, and discloses a beam deflection state switching device, which is characterized in that whether a first sub-pattern and a second sub-pattern are conducted or not is changed by controlling the conduction state of a switching medium between the first sub-pattern and the second sub-pattern; and the conduction state of the switching medium between the third sub-graph and the fourth sub-graph is controlled to change whether the third sub-graph and the fourth sub-graph are conducted or not. Therefore, the wave beam deflection state switching device has three states, and battery wave beams passing through the wave beam deflection state switching device can deflect towards three different directions in the three states. Therefore, the wave beam deflection state switching device has three reconfigurable states, is suitable for a horn antenna feed source with a simple structure, and can reduce the manufacturing difficulty and manufacturing cost of an antenna. The invention also discloses an antenna and electronic equipment.

Description

Technical Field

[0001] The embodiments of the present invention relate to the field of antenna technology, and in particular to a beam deflection state switching device, an antenna, and an electronic device. Background Art

[0002] In millimeter wave communications under the background of 5G, millimeter wave frequency signals will seriously affect the communication distance and communication quality due to their short wavelength, poor diffraction ability and large loss. The use of multi-beam or beam-reconfigurable antennas can improve the efficiency of receiving and transmitting millimeter wave signals in complex communication environments, thereby significantly improving the communication quality of the communication system. For traditional antenna arrays, complex feeding networks will lead to design difficulties and system overhead, and will bring additional losses, further degrading the efficiency of millimeter wave signals. To address this problem, reconfigurable metasurface arrays can be used to circumvent it. Metasurfaces do not require additional complex feeding networks, and their common feeding method is standard horn antennas, which can improve communication quality.

[0003] However, most of the existing millimeter-wave frequency metasurfaces are fixed beams. As the frequency increases, traditional diode technology will face the problems of high price, poor switching performance, and especially poor isolation when disconnected, which undoubtedly limits the use of millimeter-wave technology in 5G communications. Summary of the invention

[0004] The purpose of the embodiments of the present invention is to provide a beam deflection state switching device, an antenna and an electronic device. The beam deflection state switching device has three reconfigurable states, which reduces the manufacturing difficulty and manufacturing cost of the antenna.

[0005] In order to solve the above technical problems, a first aspect of the present invention provides a beam deflection state switching device, comprising:

[0006] The beam deflection state switching device is composed of N×N rectangular super surface units, N is an integer greater than 1; each of the rectangular super surface units includes: a dielectric layer having a first surface and a second surface that are opposite to each other, a first pattern layer arranged on the first surface, and a second pattern layer arranged on the second surface; the first pattern layer includes a first graphic group and a second graphic group arranged at intervals along a first direction, the first graphic group includes a first metal graphic arranged along a second direction, and the second graphic group includes a second metal graphic arranged along the second direction; the first metal graphic includes a switching medium, a first sub-graphic and a second sub-graphic arranged at intervals along the second direction and connected via the switching medium; the second metal graphic includes a first sub-graphic along a first direction The third sub-graph and the fourth sub-graph are spaced apart in the second direction, and the side of the third sub-graph away from the fourth sub-graph is provided with the switching medium for connecting the fourth sub-graph of the adjacent rectangular supersurface unit, and the side of the fourth sub-graph away from the third sub-graph is provided with the switching medium for connecting the third sub-graph of the adjacent rectangular supersurface; the switching medium is used to switch on or off the first sub-graph and the second sub-graph, and to switch on or off the third sub-graph and the fourth sub-graph; the second pattern layer is a pattern formed by translating the first pattern layer by half of the rectangular supersurface along the second direction, and the first direction is perpendicular to the second direction.

[0007] Optionally, the first metal pattern and the second metal pattern are staggered along the second direction.

[0008] Optionally, sizes of the first metal pattern and the second metal pattern of any two of the rectangular hypersurface units are different.

[0009] Optionally, the first sub-graph is a first arrow pointing in the second direction, the second sub-graph is a second arrow pointing in the opposite direction of the second direction; the third sub-graph is a third arrow pointing in the second direction, and the fourth sub-graph is a fourth arrow pointing in the opposite direction of the second direction; the sizes of the first arrows of any two of the rectangular hypersurface units are different, the sizes of the second arrows of any two of the rectangular hypersurface units are different, the sizes of the third arrows of any two of the rectangular hypersurface units are different, and the sizes of the fourth arrows of any two of the rectangular hypersurface units are different.

[0010] Optionally, it also includes: a medium switching module, which is used to control the switch medium to turn on or off the first sub-graph and the second sub-graph, and to control the switch medium to turn on or off the third sub-graph and the fourth sub-graph.

[0011] Optionally, the switching medium is a vanadium dioxide sheet.

[0012] Optionally, the switching medium is made of a shape memory metal material.

[0013] Optionally, the dielectric layer is made of insulating material.

[0014] A second aspect of the present invention provides an antenna, comprising:

[0015] The radiation source and the above-mentioned beam deflection state switching device are arranged opposite to each other.

[0016] A third aspect of the present invention provides an electronic device, comprising:

[0017] The device body and the antenna are provided on the device body.

[0018] The beam deflection state switching device provided by the present invention controls the conduction state of the switch medium between the first sub-graph and the second sub-graph to change whether the first sub-graph and the second sub-graph are connected, and controls the conduction state of the switch medium between the third sub-graph and the fourth sub-graph to change whether the third sub-graph and the fourth sub-graph are connected. The beam deflection state switching device has three states: all sub-graphs in the first pattern layer are connected and all sub-graphs in the second pattern layer are disconnected; all sub-graphs in the first pattern layer are disconnected and all sub-graphs in the second pattern layer are connected; all sub-graphs in the first pattern layer and the second pattern layer are connected or disconnected. In these three states, the battery beam passing through the beam deflection state switching device can be deflected in three different directions respectively. In this way, the beam deflection state switching device has three reconfigurable states, which is suitable for horn antenna feeds with simple structures and can reduce the manufacturing difficulty and manufacturing cost of the antenna. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] One or more embodiments are exemplarily described by pictures in the corresponding drawings, and these exemplified descriptions do not constitute limitations on the embodiments. Elements with the same reference numerals in the drawings represent similar elements, and unless otherwise stated, the figures in the drawings do not constitute proportional limitations.

[0020] Figure 1 is a schematic diagram of the three-dimensional structure of a beam deflection state switching device according to a first embodiment of the present invention;

[0021] Figure 2 is a schematic diagram of the three-dimensional structure of a rectangular supersurface unit according to the first embodiment of the present invention;

[0022] Figure 3is a front view of a rectangular supersurface unit according to a first embodiment of the present invention;

[0023] Figure 4 is a rear view of a rectangular supersurface unit according to the first embodiment of the present invention;

[0024] Figure 5 is a reflection curve of the horn antenna in different deflection states of the beam passing through the beam deflection state switching device in the first embodiment of the present invention;

[0025] Figure 6 is a YOZ radiation pattern of a beam in a 27 GHz frequency band in different beam deflection states after passing through the beam deflection state switching device in the first embodiment of the present invention;

[0026] Figure 7 It is a side view of an antenna according to a second embodiment of the present invention. DETAILED DESCRIPTION

[0027] In order to make the purpose, technical scheme and advantages of the embodiments of the present invention clearer, the following will be described in detail with reference to the accompanying drawings. However, it will be appreciated by those skilled in the art that in the various embodiments of the present invention, many technical details are provided in order to enable the reader to better understand the present application. However, even without these technical details and various changes and modifications based on the following embodiments, the technical scheme claimed in the present application can be implemented.

[0028] In the embodiments of the present invention, the terms "upper", "lower", "left", "right", "front", "back", "top", "bottom", "inner", "outer", "middle", "vertical", "horizontal", "lateral", "longitudinal" and the like indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings. These terms are mainly used to better describe the present invention and its embodiments, and are not used to limit the indicated devices, elements or components to have a specific direction, or to be constructed and operated in a specific direction.

[0029] In addition, some of the above terms may be used to express other meanings in addition to indicating orientation or positional relationship. For example, the term "on" may also be used to express a certain dependency or connection relationship in some cases. For those skilled in the art, the specific meanings of these terms in the present invention can be understood according to specific circumstances.

[0030] In addition, the terms "installed", "set", "provided with", "opened", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral structure; it can be a mechanical connection, or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be an internal connection between two devices, elements, or components. For those of ordinary skill in the art, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0031] In addition, the terms "first", "second", etc. are mainly used to distinguish different devices, elements or components (the specific types and structures may be the same or different), and are not used to indicate or imply the relative importance and quantity of the indicated devices, elements or components. Unless otherwise specified, "plurality" means two or more.

[0032] At present, in order to improve the communication quality of millimeter waves in complex environments, multi-beam or beam-reconfigurable antennas are used to receive and transmit millimeter waves. However, the use of traditional antenna arrays requires a complex feeding network, which directly leads to a significant increase in the design difficulty and manufacturing cost of the antenna, and also has a certain loss in communication quality. Therefore, a reconfigurable metasurface array can be used to replace the traditional antenna array. The existing reconfigurable metasurface array uses diodes as switches. When the frequency of the communication mode is high, the diode has problems such as high price, poor switching performance and poor isolation.

[0033] In order to solve the above technical problems, an embodiment of the present invention provides a beam deflection state switching device, including: the beam deflection state switching device is composed of N×N rectangular super surface units, N is an integer greater than 1; each of the rectangular super surface units includes: a dielectric layer having a first surface and a second surface that are separated from each other, a first pattern layer arranged on the first surface, and a second pattern layer arranged on the second surface; the first pattern layer includes a first graphic group and a second graphic group arranged at intervals along a first direction, the first graphic group includes a first metal graphic arranged along a second direction, and the second graphic group includes a second metal graphic arranged along the second direction; the first metal graphic includes a switching medium, a first sub-graphic arranged at intervals along the second direction and connected via the switching medium pattern and a second sub-pattern; the second metal pattern comprises a third sub-pattern and a fourth sub-pattern spaced apart along the second direction, the third sub-pattern away from the fourth sub-pattern is provided with the switching medium for connecting the fourth sub-pattern of the adjacent rectangular supersurface unit on the side of the third sub-pattern away from the third sub-pattern; the fourth sub-pattern away from the third sub-pattern is provided with the switching medium for connecting the third sub-pattern of the adjacent rectangular supersurface on the side of the third sub-pattern; the switching medium is used to switch on or off the first sub-pattern and the second sub-pattern, and to switch on or off the third sub-pattern and the fourth sub-pattern; the second pattern layer is a pattern formed by translating the first pattern layer by half of the rectangular supersurface along the second direction, and the first direction is perpendicular to the second direction.

[0034] An embodiment of the present invention further provides an antenna, comprising: a radiation source and the above-mentioned beam deflection state switching device, wherein the radiation source and the beam deflection state switching device are arranged opposite to each other.

[0035] An embodiment of the present invention further provides an electronic device, comprising: a device body and the above antenna, wherein the antenna is arranged on the device body.

[0036] The beam deflection state switching device provided in the embodiment of the present invention controls the conduction state of the switch medium between the first sub-graph and the second sub-graph to change whether the first sub-graph and the second sub-graph are connected, and controls the conduction state of the switch medium between the third sub-graph and the fourth sub-graph to change whether the third sub-graph and the fourth sub-graph are connected. The beam deflection state switching device has three states: all sub-graphs in the first pattern layer are connected and all sub-graphs in the second pattern layer are disconnected; all sub-graphs in the first pattern layer are disconnected and all sub-graphs in the second pattern layer are connected; all sub-graphs in the first pattern layer and the second pattern layer are connected or disconnected. In these three states, the battery beam passing through the beam deflection state switching device can be deflected in three different directions respectively. In this way, the beam deflection state switching device has three reconfigurable states, which is suitable for horn antenna feeds with simple structures and can reduce the manufacturing difficulty and manufacturing cost of the antenna.

[0037] The following is a detailed description of the implementation details of a beam deflection state switching device according to an embodiment of the present invention. The following content is only provided for easy understanding of the implementation details and is not necessary for implementing the present solution.

[0038] like Figures 1 to 4As shown, the beam deflection state switching device 100 of this embodiment is composed of N×N rectangular super surface units 110, N is an integer greater than 1; each of the rectangular super surface units 110 includes: a dielectric layer 101 having a first surface 1011 and a second surface 1012 that are separated from each other, a first pattern layer 102 arranged on the first surface 1011, and a second pattern layer 103 arranged on the second surface 1012; the first pattern layer 102 includes a first graphic group and a second graphic group arranged at intervals along a first direction P1, the first graphic group includes a first metal graphic 1021 arranged along a second direction P2, and the second graphic group includes a second metal graphic 1022 arranged along the second direction P2; the first metal graphic 1021 includes a switching medium 1021a, a first sub-graphic 1021b and a second sub-graphic 1021c arranged at intervals along the second direction P2 and connected via the switching medium 1021a; the second metal graphic 1022 includes a first sub-graphic 1021b and a second sub-graphic 1021c arranged at intervals along the second direction P2 and connected via the switching medium 1021a; The third sub-graph 1022a and the fourth sub-graph 1022b are arranged at intervals of P2, and the side of the third sub-graph 1022a away from the fourth sub-graph 1022b is provided with the switching medium 1021a for connecting the fourth sub-graph 1022b of the adjacent rectangular super-surface unit 110, and the side of the fourth sub-graph 1022b away from the third sub-graph 1022a is provided with the switching medium 1021a for connecting the third sub-graph 1022a of the adjacent rectangular super-surface unit 110; the switching medium 1021a is used to switch on or off the first sub-graph 1021b and the second sub-graph 1021c, and to switch on or off the third sub-graph 1022a and the fourth sub-graph 1022b; the second pattern layer 103 is a pattern formed by translating the first pattern layer 102 along the second direction P2 by half of the rectangular super-surface unit 110, and the first direction P1 is perpendicular to the second direction P2.

[0039] With such configuration, the beam deflection state switching device 100 has three states: all sub-patterns in the first pattern layer 102 are turned on and all sub-patterns in the second pattern layer 103 are turned off; all sub-patterns in the first pattern layer 102 are turned off and all sub-patterns in the second pattern layer 103 are turned on; and all sub-patterns in the first pattern layer 102 and the second pattern layer 103 are turned on or off. In these three states, the battery beam passing through the beam deflection state switching device 100 can be deflected in three different directions respectively. The beam deflection state switching device 100 has three reconfigurable states, which is suitable for a horn antenna feed with a simple structure, and can reduce the manufacturing difficulty and manufacturing cost of the antenna.

[0040] It can be understood that the second pattern layer 103 is a pattern formed by translating the first pattern layer 102 along the second direction P2 by half of the rectangular super surface unit 110, specifically, the pattern of the first pattern layer 102 is translated to the second surface 1012, and then the translated pattern is moved along the second direction P2 by half of the rectangular super surface unit 110. In other words, the first pattern layer 102 and the second pattern layer 103 are staggered along the second direction P2. In other words, the second pattern layer 103 is a pattern of the first pattern layer 102 that is rotationally symmetrically arranged with the central axis of the rectangular super surface unit 110 along the second direction P2 as the rotation axis.

[0041] In addition, the beam deflection state switching device 100 has different deflection angles for the beam passing through it in different states. For example, when all sub-patterns in the first pattern layer 102 are turned on and all sub-patterns in the second pattern layer 103 are turned off, hereinafter referred to as the first state, the deflection angle of the beam after passing through the beam deflection state switching device 100 is negative; when all sub-patterns in the first pattern layer 102 are turned off and all sub-patterns in the second pattern layer 103 are turned on, hereinafter referred to as the second state, the deflection angle of the beam after passing through the beam deflection state switching device 100 is positive, and the numerical value of the deflection angle is equal to the numerical value of the deflection angle of the beam after passing through the beam deflection state switching device 100 in the first state; when the first pattern layer 102 is turned off and all sub-patterns in the second pattern layer 103 are turned on, hereinafter referred to as the second state, the deflection angle of the beam after passing through the beam deflection state switching device 100 is positive, and the numerical value of the deflection angle is equal to the numerical value of the deflection angle of the beam after passing through the beam deflection state switching device 100 in the first state; All sub-graphics in the first pattern layer 102 and the second pattern layer 103 are turned on or off, hereinafter referred to as the third state, the beam does not deflect after passing through the beam deflection state switching device 100. Through simulation calculation, it can be known that when all sub-graphics in the first pattern layer 102 and the second pattern layer 103 are turned on, the beam intensity of the beam after passing through the beam deflection state switching device 100 is weaker than the beam intensity after passing through the beam deflection state switching device 100 when all sub-graphics in the first pattern layer 102 and the second pattern layer 103 are turned off. In addition, other parameters of the beam are not significantly changed.

[0042] In some specific embodiments, the beam deflection state switching device 100 may be composed of 8×8 rectangular super surface units 110, or may be as follows: Figure 1 As shown, it is composed of 4×4 rectangular hypersurface units 110. It can be understood that the specific number of the rectangular hypersurface units 110 can be adjusted according to actual needs.

[0043] In some feasible solutions, the dielectric layer 101 is made of insulating material. Optionally, the dielectric layer 101 can be made of insulating materials such as resin and foam, and is used as a bearing structure and a supporting structure for setting the first pattern layer 102, the second pattern layer 103, and some other electrical components, wires, etc.

[0044] In some feasible solutions, the dielectric layer 101 can be made of a printed circuit board, preferably a circuit board formed by multi-layer pressing, and wiring can be pre-embedded inside the circuit board. Then, by mechanical cutting, laser cutting or etching, a groove matching the outline of the first sub-graph 1021b and the second sub-graph 1021c is formed on one side of the circuit board, respectively used to accommodate the first sub-graph 1021b and the second sub-graph 1021c, and then the first sub-graph 1021b and the second sub-graph 1021c arranged in the groove are connected by the switch medium 1021a, wherein the switch medium 1021a is electrically connected to the pre-embedded wiring. Similarly, the surface of the circuit board away from the first sub-graph 1021b and the second sub-graph 1021c can also be arranged in the same manner to arrange the third sub-graph 1022a and the fourth sub-graph 1022b.

[0045] Furthermore, the switch medium 1021a may be disposed in a groove or pre-buried in a circuit board, as long as the first sub-pattern 1021b and the second sub-pattern 1021c can be turned on or off by the control of the switch medium 1021a. Similarly, the third sub-pattern 1022a and the fourth sub-pattern 1022b are also the same, and will not be described in detail here.

[0046] With such arrangement, the switch medium 1021a, the first sub-graph 1021b, the second sub-graph 1021c, the third sub-graph 1022a and the fourth sub-graph 1022b can be accommodated in a circuit board, thereby reducing the overall volume of the beam deflection state switching device 100. At the same time, it can prevent the switch medium 1021a, the first sub-graph 1021b, the second sub-graph 1021c, the third sub-graph 1022a and the fourth sub-graph 1022b from being peeled off or falling out of the circuit board due to scratches during transportation and installation.

[0047] In some embodiments, the first metal pattern 1021 and the second metal pattern 1022 are staggered along the second direction P2. That is, in the second direction P2, the first metal pattern 1021 and the second metal pattern 1022 are spaced apart, and the first metal pattern 1021 and the second metal pattern 1022 are spaced apart in the first direction P1.

[0048] Further, the sizes of the first metal patterns 1021 and the second metal patterns 1022 of any two of the rectangular supersurface units 110 are different. That is, on the beam deflection state switching device 100 composed of a plurality of the rectangular supersurface units 110, the sizes of the first metal patterns 1021 in the same column are different, and the sizes of the first metal patterns 1021 in the same row are also different, that is, the sizes of any two of the first metal patterns 1021 are different. Similarly, the sizes of any two of the second metal patterns 1022 are also different.

[0049] In some implementable schemes, the first sub-graph 1021b is a first arrow pointing to the second direction P2, the second sub-graph 1021c is a second arrow pointing in the opposite direction of the second direction P2; the third sub-graph 1022b is a third arrow pointing to the second direction P2, and the fourth sub-graph 1022c is a fourth arrow pointing in the opposite direction of the second direction P2; the sizes of the first arrows of any two of the rectangular hypersurface units 110 are different, the sizes of the second arrows of any two of the rectangular hypersurface units 110 are different, the sizes of the third arrows of any two of the rectangular hypersurface units 110 are different, and the sizes of the fourth arrows of any two of the rectangular hypersurface units 110 are different.

[0050] It can be understood that the sizes of the first arrow and the second arrow may be different, and the sizes of the third arrow and the fourth arrow may be different.

[0051] Specifically, each arrow includes two direction arms and a long arm, the two direction arms are symmetrically arranged on both sides of the long arm with the axis of the long arm as the symmetry axis, one end of the two direction arms are connected to the same end of the long arm, and the other ends of the two direction arms extend toward the other end of the long arm. More specifically, the sizes of the two direction arms and the long arms of any two of the first arrows are different, and the same is true for the second arrow, the third arrow, and the fourth arrow.

[0052] like Figure 5 and Figure 6 As shown, Figure 5 is the reflection coefficient of the horn antenna in different deflection states of the beam passing through the beam deflection state switching device 100, Figure 6 It is the YOZ radiation pattern of the beam passing through the beam deflection state switching device 100 in the 27 GHz frequency band in different beam deflection states, that is, the direction perpendicular to both the first direction P1 and the second direction P2.

[0053] In the above scheme, with the horn antenna as the feed source, the beam radiated by the horn antenna has three deflection states after passing through the beam deflection state switching device 100 in different states. Specifically, when the beam deflection state switching device 100 is in the first state, the beam radiated by the horn antenna is deflected by 35° after passing through the beam deflection state switching device 100; when the beam deflection state switching device 100 is in the second state, the beam radiated by the horn antenna is deflected by -35° after passing through the beam deflection state switching device 100; when the beam deflection state switching device 100 is in the third state, the beam radiated by the horn antenna is not deflected after passing through the beam deflection state switching device 100, and is directly emitted from the beam deflection state switching device 100 along the original direction.

[0054] from Figure 5 It can be seen that when the beam deflection state switching device 100 is in forward deflection, reverse deflection, or no deflection, the reflection coefficient of the horn antenna is below -10 dB in the frequency range of 25 GHz to 30 GHz. Figure 6 It can be seen that when the sub-graphics on either the first surface 1011 or the second surface 1012 of the rectangular metasurface unit 110 are turned on and the sub-graphics on the other surface are turned off, the beam exhibits obvious deflection. Moreover, the main lobe intensity is stronger, and the gain at 27 GHz can reach 12 dB. When the sub-graphics on both the first surface 1011 and the second surface 1012 are turned on or off, the beam does not deflect and is directly transmitted from the beam deflection state switching device 100. It can be seen from the simulation results that by controlling the state of the switch medium 1021a, the switching of the deflection state of the transmitted beam can be achieved.

[0055] The specific angle of beam deflection can be adjusted by adjusting the size and / or position of the first arrow, the second arrow, the third arrow, and the fourth arrow, such as the size of the direction arm and the long arm, and the spacing distance between different graphics.

[0056] In some other feasible solutions, the direction arm of the arrow can be replaced by an arc segment, and the size of the arc segment can be set according to actual needs.

[0057] In some practicable solutions, the switch medium 1021a is a vanadium dioxide sheet, and the vanadium dioxide sheet connects the first sub-graph 1021b and the second sub-graph 1021c. Similarly, the third sub-graph 1022a and the fourth sub-graph 1022b are also connected by the vanadium dioxide sheet. Specifically, vanadium dioxide has two states, a metallic state and a non-metallic state, under different conditions. When the vanadium dioxide sheet is in a metallic state, the first sub-graph 1021b and the second sub-graph 1021c can be connected, and the third sub-graph 1022a and the fourth sub-graph 1022b can also be connected. When the vanadium dioxide sheet is in a non-metallic state, the first sub-graph 1021b and the second sub-graph 1021c are in a disconnected state, and the third sub-graph 1022a and the fourth sub-graph 1022b are also in a disconnected state.

[0058] Furthermore, the state of the vanadium dioxide thin sheet can be changed by energizing the vanadium dioxide thin sheet, for example, by controlling it with direct current, thereby achieving control of the conduction state of the first sub-graph 1021b and the second sub-graph 1021c, and control of the conduction state of the third sub-graph 1022a and the fourth sub-graph 1022b.

[0059] When the dielectric layer 101 is a multi-layer pressed circuit board, the pre-buried wiring therein can be electrically connected to the vanadium dioxide sheets, that is, the vanadium dioxide sheets can be energized through the wiring, thereby changing the state of the vanadium dioxide sheets.

[0060] In some other feasible schemes, the switch medium 1021a is made of a shape memory metal material. Specifically, the original form of the shape memory metal can be set to electrically connect the first sub-graph 1021b and the second sub-graph 1021c at the same time, and the second form of the shape memory metal can be set to a form in which at least one of the first sub-graph 1021b and the second sub-graph 1021c is disconnected. When a positive stimulus is applied to the shape memory metal, the shape memory metal switches from the original form to the second form, disconnects the first sub-graph 1021b and the second sub-graph 1021c, and disconnects the third sub-graph 1022a and the fourth sub-graph 1022b; when the positive stimulus to the shape memory metal is stopped, or a reverse stimulus is applied to the shape memory metal, the shape memory metal switches from the second form to the original form. In general, the deformation stimulus of the shape memory metal is achieved by heating or cooling, so the shape memory metal can be heated or cooled to change its form.

[0061] In order to enable the switching medium 1021a to undergo an expected state change, the beam deflection state switching device 100 also includes: a medium switching module (not shown in the figure), which is used to control the switching medium 1021a to turn on or off the first sub-graph 1021b and the second sub-graph 1021c, and to control the switching medium 1021a to turn on or off the third sub-graph 1022a and the fourth sub-graph 1022b.

[0062] Specifically, when the switch medium 1021a is a substance having a metallic state and a non-metallic state, such as a vanadium dioxide sheet, the medium switching module may be a power source or a heat source electrically connected to the vanadium dioxide sheet, and the state of the vanadium dioxide sheet is changed by supplying power or heating the vanadium dioxide sheet. When the switch medium 1021a is a shape memory metal, the medium switching module may be a power source or a heat source in thermal contact with the shape memory metal, and the state of the shape memory metal is changed by heating or cooling.

[0063] In other feasible schemes, the switching medium 1021a can be a general metal conductor, which can be rotatably arranged on the medium layer 101. In this case, the medium switching module can be a rotating motor, which is connected to the metal conductor and drives the metal conductor to rotate to change the conduction state of the first sub-graph 1021b and the second sub-graph 1021c. The same applies to the third sub-graph 1022a and the fourth sub-graph 1022b.

[0064] Specifically, a rotating motor may be provided for each metal conductor, or a rotating motor may be connected to multiple metal conductors through transmission structures such as gears and connecting rods, and the rotation of multiple metal conductors may be controlled by a rotating motor. It is understandable that those skilled in the art may select and set conventional technical means according to their needs under the guidance of the present invention, and no further description is given here.

[0065] It should be noted that all the above-mentioned feasible solutions can be set separately or combined arbitrarily without conflict. The specific combination method can be adjusted according to actual needs under the teachings of the present invention and will not be described in detail here.

[0066] The second embodiment of the present invention provides an antenna, see Figure 7 , comprising: a radiation source 200 and the above-mentioned beam deflection state switching device 100, wherein the radiation source 200 and the beam deflection state switching device 100 are arranged opposite to each other.

[0067] In some feasible schemes, the radiation source 200 may be a horn antenna. The beam deflection state switching device 100 may be used to adjust the deflection direction of the beam radiated by the horn antenna. Thus, during the communication process, the radiation angle with the best or better communication quality may be found through the deflection direction.

[0068] It is understandable that the radiation source 200 is not limited to a horn antenna, but may be other types of antennas. Furthermore, when the type and volume of the radiation source 200 change, the specification of the beam deflection state switching device 100 may be changed by increasing or decreasing the number of the rectangular metasurface units 110 to adapt to the requirements of different antennas.

[0069] A third embodiment of the present invention provides an electronic device, comprising a device body and the above antenna, wherein the antenna is disposed on the device body.

[0070] Optionally, the electronic device may be a mobile phone, a smart watch, a tablet computer, a laptop computer, or other millimeter wave communication antenna or radar, which is not specifically limited in the present invention.

[0071] The beam deflection state switching device, antenna and electronic device provided in the embodiments of the present invention are introduced in detail above. Specific examples are used in this article to illustrate the principles and implementation methods of the present invention. The description of the above implementation methods is only used to help understand the ideas of the present invention. There may be changes in the specific implementation methods and application scope. In summary, the contents of this specification should not be understood as limiting the present invention.

Claims

1. A beam deflection state switching device, characterized in that: The beam deflection state switching device is composed of N×N rectangular super surface units, where N is an integer greater than 1; each of the rectangular super surface units includes: a dielectric layer having a first surface and a second surface that are opposite to each other, a first pattern layer provided on the first surface, and a second pattern layer provided on the second surface; The first pattern layer includes a first pattern group and a second pattern group arranged at intervals along a first direction, the first pattern group includes a first metal pattern arranged along a second direction, and the second pattern group includes a second metal pattern arranged along the second direction; The first metal pattern includes a switching medium, a first sub-pattern and a second sub-pattern arranged at intervals along the second direction and connected via the switching medium; the second metal pattern includes a third sub-pattern and a fourth sub-pattern arranged at intervals along the second direction, a side of the third sub-pattern away from the fourth sub-pattern is provided with the switching medium for connecting the fourth sub-pattern of the adjacent rectangular supersurface unit, and a side of the fourth sub-pattern away from the third sub-pattern is provided with the switching medium for connecting the third sub-pattern of the adjacent rectangular supersurface; the switching medium is used to turn on or off the first sub-pattern and the second sub-pattern, and to turn on or off the third sub-pattern and the fourth sub-pattern; The second pattern layer is a pattern formed by translating the first pattern layer by half of the rectangular super surface along the second direction, and the first direction is perpendicular to the second direction.

2. The beam deflection state switching device according to claim 1, characterized in that: The first metal pattern and the second metal pattern are staggered along the second direction.

3. The beam deflection state switching device according to claim 1, characterized in that: The sizes of the first metal pattern and the second metal pattern of any two of the rectangular hypersurface units are different.

4. The beam deflection state switching device according to claim 1, characterized in that: The first sub-graph is a first arrow pointing to the second direction, the second sub-graph is a second arrow pointing in the opposite direction of the second direction; the third sub-graph is a third arrow pointing in the second direction, and the fourth sub-graph is a fourth arrow pointing in the opposite direction of the second direction; The sizes of the first arrows of any two of the rectangular hypersurface units are different, the sizes of the second arrows of any two of the rectangular hypersurface units are different, the sizes of the third arrows of any two of the rectangular hypersurface units are different, and the sizes of the fourth arrows of any two of the rectangular hypersurface units are different.

5. The beam deflection state switching device according to claim 1, characterized in that: Also includes: A medium switching module, the medium switching module is used to control the switch medium to turn on or off the first sub-graph and the second sub-graph, and to control the switch medium to turn on or off the third sub-graph and the fourth sub-graph.

6. The beam deflection state switching device according to any one of claims 1 to 5, characterized in that: The switch medium is a vanadium dioxide sheet.

7. The beam deflection state switching device according to any one of claims 1 to 5, characterized in that: The switching medium is made of shape memory metal material.

8. The beam deflection state switching device according to any one of claims 1 to 5, characterized in that: The dielectric layer is made of insulating material.

9. An antenna, characterized in that: It comprises a radiation source and a beam deflection state switching device as described in any one of claims 1 to 8, wherein the radiation source and the beam deflection state switching device are arranged opposite to each other.

10. An electronic device, characterized in that: It comprises a device body and the antenna as claimed in claim 9, wherein the antenna is arranged on the device body.

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