Light sensing device

Abstract

The invention provides a light sensing device. The light sensing device comprises a substrate, a first pixel structure, a second pixel structure and a first bus, the first pixel structure is arranged on the substrate and comprises a first light sensing element, wherein the first light sensing element is provided with a first semiconductor layer. The second pixel structure is arranged on the substrate and comprises a second light sensing element, wherein the second light sensing element is provided with a second semiconductor layer. The first bus is arranged on the substrate and located between the first semiconductor layer and the second semiconductor layer, wherein the first bus is electrically connected with the first pixel structure and the second pixel structure.

Description

Technical Field

[0001] The present disclosure relates to a light sensing device. Background Art

[0002] As photosensitive devices are becoming smaller and smaller, the photosensitive area and circuit layout area thereof are also reduced, resulting in a decrease in the intensity of the photosensitive signal and / or an increase in the noise generated, thereby reducing the signal-to-noise ratio (SNR) of the photosensitive device. Summary of the invention

[0003] The present disclosure provides a light sensing device, which has an improved signal-to-noise ratio.

[0004] According to an embodiment of the present disclosure, a light sensing device includes a substrate, a first pixel structure, a second pixel structure, and a first bus. The first pixel structure is disposed on the substrate and includes a first photosensitive element, wherein the first photosensitive element has a first semiconductor layer. The second pixel structure is disposed on the substrate and includes a second photosensitive element, wherein the second photosensitive element has a second semiconductor layer. The first bus is disposed on the substrate and is located between the first semiconductor layer and the second semiconductor layer, wherein the first bus is electrically connected to the first pixel structure and the second pixel structure.

[0005] Based on the above, the light sensing device of the present disclosure includes a first bus electrically connected to the first pixel structure and the second pixel structure. By making the signals to be provided and / or received by the first pixel structure and the second pixel structure all come from the first bus, the number of signal lines provided in the light sensing device can be reduced, thereby increasing the area of ​​the light sensing region of the pixel structure and improving the signal strength sensed by the light sensing device, and also increasing the area of ​​the circuit layout region of the pixel structure and reducing the noise in the light sensing device. Therefore, the signal-to-noise ratio of the light sensing device of the present disclosure can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0006] Figure 1A is a partial top view schematic diagram of a light sensing device according to a first embodiment of the present disclosure;

[0007] Figure 1B is an equivalent circuit diagram of the light sensing device according to the first embodiment of the present disclosure;

[0008] Figure 2A is a partial top view schematic diagram of a light sensing device according to a second embodiment of the present disclosure;

[0009] Figure 2B is an equivalent circuit diagram of a light sensing device according to a second embodiment of the present disclosure;

[0010] Figure 3A is a partial top view schematic diagram of a light sensing device according to a third embodiment of the present disclosure;

[0011] Figure 3B is an equivalent circuit diagram of a light sensing device according to a third embodiment of the present disclosure;

[0012] Figure 4A is a partial top view schematic diagram of a light sensing device according to a fourth embodiment of the present disclosure;

[0013] Figure 4B is an equivalent circuit diagram of a light sensing device according to a fourth embodiment of the present disclosure;

[0014] Figure 5A is a partial top view schematic diagram of a light sensing device according to a fifth embodiment of the present disclosure;

[0015] Figure 5B is an equivalent circuit diagram of a light sensing device according to a fifth embodiment of the present disclosure;

[0016] Figure 6 FIG. 4 is a partial top view of a light sensing device according to a sixth embodiment of the present disclosure. DETAILED DESCRIPTION

[0017] The present disclosure can be understood by referring to the following detailed description in conjunction with the accompanying drawings. It should be noted that in order to facilitate the understanding of the readers and the simplicity of the drawings, the multiple drawings in the present disclosure only depict a portion of the electronic device, and the specific elements in the drawings are not drawn according to the actual scale. In addition, the number and size of each element in the drawings are only for illustration and are not intended to limit the scope of the present disclosure.

[0018] Certain words are used throughout the specification and the claims that follow to refer to specific components. It will be understood by those skilled in the art that electronic device manufacturers may refer to the same components by different names. It is not intended herein to distinguish between components that have the same function but different names. In the following specification and claims, words such as "include", "contain", "have" are open-ended words, and therefore should be interpreted as "including but not limited to..." Therefore, when the terms "include", "contain" and / or "have" are used in the description of the present disclosure, they specify the presence of corresponding features, regions, steps, operations and / or components, but do not exclude the presence of one or more corresponding features, regions, steps, operations and / or components.

[0019] The directional terms mentioned herein, such as "up", "down", "front", "back", "left", "right", etc., are only with reference to the directions of the drawings. Therefore, the directional terms used are for illustration and not for limiting the present disclosure. In the drawings, each figure shows the general characteristics of the methods, structures and / or materials used in a particular embodiment. However, these drawings should not be interpreted as defining or limiting the scope or nature covered by these embodiments. For example, for clarity, the relative size, thickness and position of each film layer, region and / or structure may be reduced or enlarged.

[0020] When a corresponding component (such as a film layer or region) is referred to as being "on another component", it may be directly on the other component, or other components may exist between the two. On the other hand, when a component is referred to as being "directly on another component", there is no component between the two. In addition, when a component is referred to as being "on another component", the two have a top-down relationship in a top-down direction, and the component may be above or below the other component, and the top-down relationship depends on the orientation of the device.

[0021] The terms "approximately," "equal," "equal," or "same," "substantially," or "approximately" are generally interpreted as within 20% of a given value or range, or within 10%, 5%, 3%, 2%, 1% or 0.5% of a given value or range.

[0022] The ordinal numbers used in the specification and claims, such as "first", "second", etc., are used to modify the elements. They do not imply or represent any previous ordinal numbers of the element (or elements), nor do they represent the order of one element and another element, or the order of the manufacturing method. The use of these ordinal numbers is only used to make the element with a certain name clearly distinguishable from another element with the same name. The claims and the specification may not use the same words. Accordingly, the first component in the specification may be the second component in the claim.

[0023] It should be noted that the following embodiments can replace, reorganize, or mix features in several different embodiments to complete other embodiments without departing from the spirit of the present disclosure. Features between embodiments can be mixed and matched as long as they do not violate the spirit of the invention or conflict with each other.

[0024] The electrical connection or coupling described in the present disclosure may refer to direct connection or indirect connection. In the case of direct connection, the endpoints of the components on the two circuits are directly connected or connected to each other by a conductor segment, and in the case of indirect connection, there are switches, diodes, capacitors, inductors, other suitable components, or combinations of the above components between the endpoints of the components on the two circuits, but it is not limited thereto.

[0025] In the present disclosure, the thickness, length and width can be measured by an optical microscope, and the thickness can be measured by a cross-sectional image in an electron microscope, but it is not limited to this. In addition, any two values ​​or directions used for comparison may have a certain error. If the first value is equal to the second value, it implies that there may be an error of about 10% between the first value and the second value; if the first direction is perpendicular to the second direction, the angle between the first direction and the second direction may be between 80 degrees and 100 degrees; if the first direction is parallel to the second direction, the angle between the first direction and the second direction may be between 0 degrees and 10 degrees.

[0026] The electronic device disclosed herein may include a detection device, a display device, an antenna device (such as a liquid crystal antenna), a light-emitting touch device, a splicing device, a device having other suitable functions, or a combination of devices having the above functions, but is not limited thereto. The electronic device includes a rollable or flexible electronic device, but is not limited thereto. The electronic device may, for example, include a liquid crystal, a light emitting diode (LED), a quantum dot (QD), fluorescence, phosphorescence, other suitable materials or a combination of the above. The light-emitting diode may, for example, include an organic light emitting diode (OLED), a micro light-emitting diode (micro-LED, mini-LED) or a quantum dot light-emitting diode (QLED, QDLED), but is not limited thereto. The electronic device may include an electronic component. The electronic component may include passive components and active components, such as capacitors, resistors, inductors, diodes, transistors, etc. The diode may include a light-emitting diode or a photodiode. The light emitting diode may, for example, include an organic light emitting diode (OLED), a sub-millimeter light emitting diode (mini LED), a micro LED or a quantum dot light emitting diode (quantum dot, QD, which may be, for example, QLED, QDLED) or other suitable materials or any combination of the above materials, but is not limited thereto. It should be noted that the electronic device may be any combination of the aforementioned, but is not limited thereto. In addition, the appearance of the electronic device may be rectangular, circular, polygonal, a shape with curved edges or other suitable shapes. The electronic device may have peripheral systems such as a drive system, a control system, a light source system, a shelf system, etc. to support a display device or a splicing device. It should be noted that the electronic device may be any combination of the aforementioned, but is not limited thereto. The electronic device may include a plurality of components, and at least two components may be assembled to form a composite component. The following will use a detection device as an electronic device to illustrate the contents of the present disclosure, but the present disclosure is not limited thereto.

[0027] Exemplary embodiments of the present disclosure are described below, and the same reference numerals are used in the drawings and the description to indicate the same or similar parts.

[0028] Figure 1A is a partial top view of the light sensing device of the first embodiment of the present disclosure, and Figure 1B FIG. 4 is an equivalent circuit diagram of the light sensing device according to the first embodiment of the present disclosure.

[0029] Please refer to Figure 1AThe light sensing device 10a of the present embodiment includes a substrate SB, a pixel structure PX, a bus BU, a selection line SL, a read line RL, a power line PL and a reset line RE.

[0030] The material of the substrate SB may include, for example, a hard material, a soft material, or a combination thereof. For example, the material of the substrate SB may include quartz, sapphire, polymethyl methacrylate (PMMA), polycarbonate (PC), polyimide (PI), polyethylene terephthalate (PET), or other suitable materials or a combination of the above materials, but the present disclosure is not limited thereto.

[0031] The pixel structure PX is, for example, disposed on a substrate SB. In this embodiment, the pixel structure PX includes a first pixel structure PX1 and a second pixel structure PX2, wherein the first pixel structure PX1 includes a first semiconductor layer SE1, and the second pixel structure PX2 includes a second semiconductor layer SE2. Figure 1A From another perspective, in this embodiment, the pixel structure PX includes a photosensitive element PS and a transistor T, such as Figure 1B As shown. Based on this, the pixel structure PX, for example, has a light sensing region LR and a circuit layout region CR, wherein the light sensing region LR is, for example, defined by a region where the semiconductor layer (for example, the first semiconductor layer SE1 and the second semiconductor layer SE2) in the photosensitive element PS is not blocked by a light shielding layer above it (in the normal direction n of the substrate SB), and the circuit layout region CR is, for example, a region in the pixel structure PX where a circuit layout can be designed, but the present disclosure is not limited thereto. In the present embodiment, the first pixel structure PX1 may include a first light sensing region LR1 and a first circuit layout region CR1, and the second pixel structure PX2 may include a second light sensing region LR2 and a second circuit layout region CR2.

[0032] The photosensitive element PS is, for example, disposed on the substrate SB and coupled to the transistor T. In the present embodiment, the photosensitive element PS includes a first photosensitive element PS1 disposed in the first pixel structure PX1 and a second photosensitive element PS2 disposed in the second pixel structure PX2, but the present disclosure is not limited thereto. The first photosensitive element PS1 may, for example, include a lower electrode BE1, an upper electrode (not shown), and a first semiconductor layer SE1, and the second photosensitive element PS2 may, for example, include a lower electrode BE2, an upper electrode (not shown), and a second semiconductor layer SE2, wherein the first semiconductor layer SE1 is disposed between the lower electrode BE1 and the upper electrode in the normal direction n of the substrate SB, and the second semiconductor layer SE2 is disposed between the lower electrode BE2 and the upper electrode in the normal direction n of the substrate SB. The material of the lower electrode BE1, the lower electrode BE2, and the upper electrode includes, for example, a transparent conductive material, which may be, for example, indium tin oxide (ITO), but the present disclosure is not limited thereto. The photosensitive element PS may, for example, be coupled to the transistor T via the lower electrode BE, and may, for example, be coupled to the bus BU to be introduced later via the upper electrode. The material of the first semiconductor layer SE1 and the second semiconductor layer SE2 includes, for example, amorphous silicon, but the present disclosure is not limited thereto. In other embodiments, the first semiconductor layer SE1 and the second semiconductor layer SE2 may include single crystal material or polycrystalline material. In some embodiments, the first semiconductor layer SE1 and the second semiconductor layer SE2 may include a first layer (not shown), an intrinsic layer (not shown) and a second layer (not shown), and the first layer, the intrinsic layer and the second layer are stacked in this order in the normal direction n of the substrate SB, for example, but the present disclosure is not limited thereto.

[0033] The transistor T is, for example, disposed on the substrate SB and coupled to the photosensitive element PS. The transistor T may be, for example, a top-gate thin film transistor or other thin film transistors known to those skilled in the art, but the present disclosure is not limited thereto. For example, the transistor T may include a gate (not shown), a source (not shown), a drain (not shown), and a semiconductor (not shown), wherein the gate at least partially overlaps with the semiconductor in the normal direction n of the substrate SB, and the source and the drain are separated from each other and electrically connected to the semiconductor. In the present embodiment, the transistor T includes a selection transistor T1, a drive transistor T2, and a reset transistor T3, but the present disclosure is not limited thereto.

[0034] The bus BU is, for example, disposed on the substrate SB and electrically connected to the pixel structure PX. In this embodiment, the bus BU is electrically connected to the first pixel structure PX1 and the second pixel structure PX2 to provide and / or receive signals corresponding to the first pixel structure PX1 and the second pixel structure PX2. Figure 1AAs shown, the bus BU may include a first bus BU1 and a second bus BU2, wherein the first bus BU1 may be a bias line for providing a bias signal, and the second bus BU2 may be a reset line for providing a reset signal, but the present disclosure is not limited thereto. The first bus BU1 at least partially overlaps with the second bus BU2 in the normal direction n of the substrate SB, for example. In the present embodiment, the first bus BU1 overlaps with the second bus BU2 in the normal direction n of the substrate SB. Based on this, in the present embodiment, by making the signals to be provided and / or received by the first pixel structure PX1 and the second pixel structure PX2 all come from one bus BU, it can reduce the number of signal lines set in the light sensing device 10a, so that the area of ​​the first light sensing region LR1 of the first pixel structure PX1 and the area of ​​the second light sensing region LR2 of the second pixel structure PX2 can be increased respectively, thereby improving the signal strength sensed by the light sensing device 10a. Furthermore, the configuration of integrating at least two signal lines into one bus BU can also increase the area of ​​the first circuit layout region CR1 of the first pixel structure PX1 and the area of ​​the second circuit layout region CR2 of the second pixel structure PX2, respectively, so that the circuit design in the first circuit layout region CR1 and the second circuit layout region CR2 can be more flexible, thereby reducing the noise generated in the light sensing device 10a. Based on this, the signal-to-noise ratio (SNR) of the light sensing device 10a of the present embodiment can be improved.

[0035] In some embodiments, the light sensing device 10a may further include a bridging electrode BR, wherein the bridging electrode BR is used to electrically connect the bus BU to the corresponding pixel structure PX. Specifically, in this embodiment, the first bus BU1 may be electrically connected to the first pixel structure PX1 through the first bridging electrode BR1, and may be electrically connected to the second pixel structure PX2 through the second bridging electrode BR2. Figure 1A Although not shown in the figure, the second bus BU2 can also be electrically connected to the corresponding pixel structure PX through the bridge electrode BR. It is worth noting that although the present embodiment shows that the bridge electrode BR and the first bus BU1 belong to the same layer; however, the present disclosure is not limited to this. That is, the bridge electrode BR and the first bus BU1 can belong to different layers.

[0036] The bus BU, for example, extends in the first direction d1, and is, for example, located between the first semiconductor layer SE1 in the first photosensitive element PS1 and the second semiconductor layer SE2 in the second photosensitive element PS2, wherein the first direction d1 may, for example, be orthogonal to the normal direction n of the substrate SB, but the present disclosure is not limited thereto. In some embodiments, the bus BU does not overlap with the first semiconductor layer SE1 and the second semiconductor layer SE2 in the normal direction n of the substrate SB. Based on this, by making the bus BU not overlap with the first semiconductor layer SE1 in the first photosensitive element PS1 and the second semiconductor layer SE2 in the second photosensitive element PS2 in the normal direction n of the substrate SB, it can increase the light sensing area of ​​the pixel structure PX in the normal direction n of the substrate SB and improve the fill factor (FF) of the light sensing device 10a, thereby improving the photoelectric conversion efficiency of the light sensing device 10a.

[0037] The selection line SL is, for example, disposed on the substrate SB and is, for example, coupled to the control terminal of the selection transistor T1, wherein the selection line SL can be, for example, used to provide a selection signal to the selection transistor T1 to turn it on. In some embodiments, the selection line SL extends in a second direction d2, wherein the second direction d2 can be orthogonal to the first direction d1 and the normal direction n of the substrate SB, but the present disclosure is not limited thereto.

[0038] The read line RL is, for example, disposed on the substrate SB and is, for example, coupled to the first end of the selection transistor T1, wherein the read line RL can, for example, be used to receive a signal (sensing current) generated by the photosensitive element PS when the selection transistor T1 is turned on, and the read line RL can transmit the sensing current to a processing circuit (not shown), wherein the processing circuit can, for example, convert the sensing current into a sensing voltage and determine the intensity of light received by the light sensing device 10a, but the present disclosure is not limited thereto. In some embodiments, the read line RL extends in a first direction d1, but the present disclosure is not limited thereto. In the present embodiment, the read line RL includes a read line RL1 and a read line RL2, wherein the read line RL1 is electrically connected to the first pixel structure PX1, and the read line RL2 is electrically connected to the second pixel structure PX2, but the present disclosure is not limited thereto.

[0039] The power line PL is, for example, disposed on the substrate SB and is, for example, coupled to the second end of the driving transistor T2, wherein the power line PL can, for example, be used to provide a high voltage (e.g., a power voltage Vdd) to the driving transistor T2 so that the driving transistor T2 can output a current when turned on. In some embodiments, the power line PL extends in a first direction d1, but the present disclosure is not limited thereto. In the present embodiment, the power line PL includes a power line PL1 and a power line PL2, wherein the power line PL1 is electrically connected to the first pixel structure PX1, and the power line PL2 is electrically connected to the second pixel structure PX2, but the present disclosure is not limited thereto.

[0040] The reset line RE is, for example, disposed on the substrate SB and coupled to the control terminal of the reset transistor T3, wherein the reset line RE can be, for example, used to provide a reset signal to the reset transistor T3 to turn it on, for example, to modulate the voltage of the control terminal of the driving transistor T2. In some embodiments, the reset line RE extends toward the second direction d2, but the present disclosure is not limited thereto.

[0041] In the present embodiment, the first pixel structure PX1 and the second pixel structure PX2 may be arranged in mirror images on both sides of the bus BU. For example, the first pixel structure PX1 and the second pixel structure PX2 may be arranged along the second direction d2, and the photosensitive element PS and the transistor T included in the first pixel structure PX1 and the second pixel structure PX2 may be arranged in mirror images on both sides of the bus BU, but the present disclosure is not limited thereto. In some embodiments, the read line RL1 and the read line RL2 may be arranged in mirror images on both sides of the bus BU, and the power line PL1 and the power line PL2 may be arranged in mirror images on both sides of the bus BU, but the present disclosure is not limited thereto.

[0042] exist Figure 1B In the circuit diagram shown, the components in the light sensing device 10a have the following coupling relationships, but the present disclosure is not limited thereto.

[0043] The control terminal of the selection transistor T1 is coupled to the selection line SL, for example, the first terminal of the selection transistor T1 is coupled to the read line RL, for example, the second terminal of the selection transistor T1 is coupled to the first terminal of the driving transistor T2, for example, the control terminal of the driving transistor T2 is coupled to the node N, for example, the second terminal of the driving transistor T2 is coupled to the power line PL providing the power supply voltage Vdd, the control terminal of the reset transistor T3 is coupled to the reset line RE, the first terminal of the reset transistor T3 is coupled to the node N, for example, the second terminal of the reset transistor T3 is coupled to the second bus BU2 providing the reset voltage Vreset, the cathode terminal (lower electrode BE) of the photosensitive element PS can be coupled to the node N, and the anode terminal (upper electrode) of the photosensitive element PS can be coupled to the first bus BU1 providing the bias voltage Vbias, but the present disclosure is not limited thereto. In other embodiments, the cathode terminal (upper electrode) of the photosensitive element PS can be coupled to the node N, for example, and the anode terminal (lower electrode BE) of the photosensitive element PS can be coupled to the first bus BU1 providing the bias voltage Vbias, for example.

[0044] In this embodiment, the light sensing device 10 a may be operated through the following steps, but the present disclosure is not limited thereto.

[0045] First, a reset step is performed, in which a reset line RE is used to provide a signal to the control terminal of the reset transistor T3 to turn on the reset transistor T3 , so that the voltage of the node N is reset or adjusted to the reset voltage Vreset.

[0046] Next, an illumination step is performed, which turns off the reset transistor T3 and causes the light-sensitive element PS to be illuminated by light for a specific time. The light-sensitive element PS can receive the light and generate a signal, so that the voltage of the node N changes, wherein the voltage of the node N can be affected by, for example, the intensity and / or time of the light irradiating the light-sensitive element PS.

[0047] Afterwards, a reading step is performed. After the light sensing element PS is irradiated by light for a specific time, it uses the selection line SL to provide a signal to the control end of the selection transistor T1 to turn on the selection transistor T1. Therefore, the driving transistor T2 with the power supply voltage Vdd applied to the second end can output a current, and it can be provided to the reading line RL through the turned-on selection transistor T1. It is worth noting that the magnitude of the current output by the driving transistor T2 is, for example, affected by the voltage of the above-mentioned node N, that is, it is affected by the intensity and / or time of the light irradiating the light sensing element PS. Subsequently, the sensing current can be converted into a sensing voltage through, for example, a processing circuit coupled to the reading line RL and the intensity of the light received by the light sensing device 10a can be determined, but the present disclosure is not limited to this.

[0048] Figure 2A is a partial top view of a light sensing device according to a second embodiment of the present disclosure, and Figure 2B is an equivalent circuit diagram of the light sensing device of the second embodiment of the present disclosure. It should be noted that, Figure 2A and Figure 2B The embodiments can be used in their own way Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0049] Please also refer to Figure 2A as well as Figure 2B The main differences between the optical sensing device 10b of the present embodiment and the aforementioned optical sensing device 10a are: (1) the optical sensing device 10b further includes a power line PL' and a capacitor C, and the transistor T' further includes a load transistor T4 and a load transistor T5; (2) the second bus BU2 is an active load line for providing a load signal.

[0050] The power line PL' is, for example, disposed on the substrate SB and is, for example, coupled to the first end of the driving transistor T2, wherein the power line PL' can be, for example, used to provide a low voltage (e.g., a reference voltage Vss) to the load transistor T5. In some embodiments, the power line PL' extends in the first direction d1, but the present disclosure is not limited thereto. In the present embodiment, the power line PL' includes a power line PL1' and a power line PL2', wherein the power line PL1' is electrically connected to the first pixel structure PX1, and the power line PL2' is electrically connected to the second pixel structure PX2, but the present disclosure is not limited thereto. In addition, in some embodiments, the power line PL1' and the power line PL2' can be arranged in a mirror image on both sides of the bus BU, but the present disclosure is not limited thereto.

[0051] In this embodiment, the second bus BU2 is a load signal line for providing a load signal, which is coupled to the control terminal of the load transistor T4. The load transistor T4 is, for example, an active load, and its resistance value affects the voltage of the node N.

[0052] exist Figure 2B In the circuit diagram shown, the components in the light sensing device 10 b have the following coupling relationships, but the present disclosure is not limited thereto.

[0053] The control terminal of the selection transistor T1 is coupled to the selection line SL, for example, the first terminal of the selection transistor T1 is coupled to the read line RL, the second terminal of the selection transistor T1 is coupled to the first terminal of the driving transistor T2, for example, the control terminal of the driving transistor T2 is coupled to the node N, the second terminal of the driving transistor T2 is coupled to the power line PL providing the power supply voltage Vdd, the control terminal of the reset transistor T3 is coupled to the reset line RE, the first terminal of the reset transistor T3 is coupled to the node N1, the second terminal of the reset transistor T3 is coupled to the node N, the cathode terminal (lower electrode BE) of the light sensing element PS is coupled to the node N1, and the anode terminal (upper electrode BE) of the light sensing element PS is coupled to the node N2. The first terminal and the second terminal of the capacitor C are, for example, electrically connected to the first terminal and the second terminal of the reset transistor T3, respectively. The control terminal of the load transistor T4 is, for example, coupled to the second bus BU2 providing a load signal. The first terminal of the load transistor T4 is, for example, coupled to a node N. The second terminal of the load transistor T4 is, for example, coupled to a power line PL providing a power supply voltage Vdd. The control terminal of the load transistor T5 is, for example, coupled to a node N1. The first terminal of the load transistor T5 is, for example, coupled to a power line PL' providing a reference voltage Vss. The second terminal of the load transistor T5 is, for example, coupled to the node N.

[0054] Figure 3A is a partial top view of a light sensing device according to a third embodiment of the present disclosure, and Figure 3Bis an equivalent circuit diagram of the light sensing device of the third embodiment of the present disclosure. It should be noted that, Figure 3A and Figure 3B The embodiments can be used in their own way Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0055] Please also refer to Figure 3A as well as Figure 3B The main difference between the optical sensing device 10 c of this embodiment and the aforementioned optical sensing device 10 a is that the optical sensing device 10 c does not include the second bus BU2 .

[0056] exist Figure 3B In the circuit diagram shown, the components in the light sensing device 10c have the following coupling relationships, but the present disclosure is not limited thereto.

[0057] The control terminal of the selection transistor T1 is, for example, coupled to the selection line SL, the first terminal of the selection transistor T1 is, for example, coupled to the read line RL, the second terminal of the selection transistor T1 is, for example, coupled to the node N2, the control terminal of the driving transistor T2 is, for example, coupled to the node N, the first terminal of the driving transistor T2 is, for example, coupled to the node N2, the second terminal of the driving transistor T2 is, for example, coupled to the power line PL providing the power supply voltage Vdd, the control terminal of the reset transistor T3 is coupled to the reset line RE, the first terminal of the reset transistor T3 is, for example, coupled to the node N2, the second terminal of the reset transistor T3 is, for example, coupled to the node N, the cathode terminal (lower electrode BE) of the photosensitive element PS is, for example, coupled to the node N, and the anode terminal (upper electrode) of the photosensitive element PS is, for example, coupled to the first bus BU1 providing the bias voltage Vbias.

[0058] Figure 4A is a partial top view of a light sensing device according to a fourth embodiment of the present disclosure, and Figure 4B is an equivalent circuit diagram of the optical sensing device of the fourth embodiment of the present disclosure. It should be noted that, Figure 4A and Figure 4B The embodiments can be used in their own way Figure 3A and Figure 3B The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0059] Please also refer to Figure 4A as well as Figure 4BThe main difference between the light sensing device 10d of this embodiment and the aforementioned light sensing device 10c is that: the pixel structure PX' also includes a third pixel structure PX3 (therefore, the light sensing area LR' also includes a third light sensing area LR3, and the circuit layout area CR' also includes a third circuit layout area CR3; or, the photosensitive element PS' also includes a third photosensitive element PS3, wherein the third photosensitive element PS3 includes a third semiconductor layer SE3), the bus BU' also includes a third bus BU3, and the transistor T also includes a reset transistor T3'.

[0060] In the present embodiment, the third bus BU3 is electrically connected to the third pixel structure PX3 to provide and / or receive a signal corresponding to the third pixel structure PX3. The third bus BU3, for example, extends in the second direction d2, and is, for example, located between the first semiconductor layer SE1 in the first photosensitive element PS1 and the third semiconductor layer SE3 in the third photosensitive element PS3. In the present embodiment, the third bus BU3 may be a reset switch control signal line (global resetline) for providing a reset switch control signal, but the present disclosure is not limited thereto. In detail, the third bus BU3 is, for example, coupled to the control end of the reset transistor T3', wherein the third bus BU3 may, for example, be used to provide a reset switch control signal to the reset transistor T3' to turn it on, for example, to modulate the voltage of the control end of the driving transistor T2.

[0061] In the present embodiment, the first pixel structure PX1 and the third pixel structure PX3 may be disposed in mirror images on both sides of the third bus BU3. For example, the first pixel structure PX1 and the third pixel structure PX3 may be arranged along the first direction d1, and the photosensitive elements (the first photosensitive element PS1 and the third photosensitive element PS3) and the transistor T included in the first pixel structure PX1 and the third pixel structure PX3 may be disposed in mirror images on both sides of the third bus BU3, but the present disclosure is not limited thereto.

[0062] In this embodiment, the selection line SL includes a selection line SL1 and a selection line SL2, wherein the selection line SL1 and the selection line SL2 may be arranged in a mirror image on both sides of the third bus BU3. In addition, in this embodiment, the reset line RE includes a reset line RE1 and a reset line RE2, wherein the reset line RE1 and the reset line RE2 may be arranged in a mirror image on both sides of the third bus BU3.

[0063] In addition, in the present embodiment, the first bus BU1 may be electrically connected to the third pixel structure PX3 through the third bridge electrode BR3 of the bridge electrodes BR to provide and / or receive a corresponding signal of the third pixel structure PX3.

[0064] exist Figure 4BIn the circuit diagram shown, the components in the light sensing device 10d have the following coupling relationships, but the present disclosure is not limited thereto.

[0065] The control terminal of the selection transistor T1 is, for example, coupled to the selection line SL, the first terminal of the selection transistor T1 is, for example, coupled to the read line RL, the second terminal of the selection transistor T1 is, for example, coupled to the first terminal of the driving transistor T2, the control terminal of the driving transistor T2 is, for example, coupled to the node N, the second terminal of the driving transistor T2 is, for example, coupled to the node N3, the control terminal of the reset transistor T3 is, for example, coupled to the reset line RE, the first terminal of the reset transistor T3 is, for example, coupled to the node N3, the second terminal of the reset transistor T3 is, for example, coupled to the power line PL providing the power supply voltage Vdd, the control terminal of the reset switch control transistor T3' is coupled to the third bus BU3, the first terminal of the reset switch control transistor T3' is, for example, coupled to the node N3, the second terminal of the reset switch control transistor T3' is, for example, coupled to the node N, the cathode terminal (lower electrode BE) of the photosensitive element PS is, for example, coupled to the node N, and the anode terminal (upper electrode) of the photosensitive element PS is, for example, coupled to the first bus BU1 providing the bias voltage Vbias.

[0066] Figure 5A is a partial top view of a light sensing device according to a fifth embodiment of the present disclosure, and Figure 5B is an equivalent circuit diagram of the light sensing device of the fifth embodiment of the present disclosure. It should be noted that, Figure 5A and Figure 5B The embodiments can be used in their own way Figure 1A and Figure 1B The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0067] Please also refer to Figure 5A as well as Figure 5B The main difference between the optical sensing device 10e of this embodiment and the aforementioned optical sensing device 10a is that the optical sensing device 10e does not include the second bus BU2 and the power line PL, and the transistor T does not include the driving transistor T2 and the reset transistor T3.

[0068] exist Figure 5B In the circuit diagram shown, the components in the light sensing device 10e have the following coupling relationships, but the present disclosure is not limited thereto.

[0069] The control end of the selection transistor T1 is coupled to the selection line SL, for example, the first end of the selection transistor T1 is coupled to the read line RL, for example, the second end of the selection transistor T1 is coupled to the cathode end (lower electrode BE) of the photosensitive element PS, and the anode end (upper electrode) of the photosensitive element PS is coupled to the first bus BU1 that provides the bias voltage Vbias.

[0070] Figure 6 FIG. 1 is a partial top view of a light sensing device according to a sixth embodiment of the present disclosure. It should be noted that: Figure 6 The embodiments can be used Figure 5A The component numbers and partial contents of the embodiments are shown in the figure, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted.

[0071] Please refer to Figure 6 The main difference between the optical sensing device 10f of this embodiment and the aforementioned optical sensing device 10e is that the first bus BU1' extends toward the second direction d2.

[0072] In the present embodiment, the first pixel structure PX1 and the third pixel structure PX3 may be mirror-imaged on both sides of the first bus BU1'. For example, the first pixel structure PX1 and the third pixel structure PX3 may be arranged along the first direction d1, and the photosensitive element PS and the transistor T included in the first pixel structure PX1 and the third pixel structure PX3 may be mirror-imaged on both sides of the first bus BU1', but the present disclosure is not limited thereto. In the present embodiment, the selection line SL includes a selection line SL1 and a selection line SL2, wherein the selection line SL1 and the selection line SL2 may be mirror-imaged on both sides of the first bus BU1'.

[0073] In addition, in the present embodiment, the light sensing device 10f may include a bridging electrode BR', wherein the bridging electrode BR' is used to electrically connect the first bus BU1' with the corresponding pixel structure PX'. In detail, in the present embodiment, the first bus BU1' may be electrically connected to the first pixel structure PX1 through the first bridging electrode BR1', electrically connected to the second pixel structure PX2 through the second bridging electrode BR2', and electrically connected to the third pixel structure PX3 through the third bridging electrode BR3'. It is worth noting that although the present embodiment shows that the bridging electrode BR' and the first bus BU1' belong to the same layer; however, the present disclosure is not limited to this. That is, the bridging electrode BR' and the first bus BU1' may belong to different layers.

[0074] It is worth noting that the coupling relationship of the components in the light sensing device 10f may be the same as or similar to the coupling relationship of the components in the light sensing device 10e, but the present disclosure is not limited thereto.

[0075] In summary, in the light sensing device provided by some embodiments of the present disclosure, by making the signals to be provided and / or received by adjacent pixel structures all come from one bus, the number of signal lines provided in the light sensing device can be reduced, thereby increasing the area of ​​the light sensing region of the pixel structure and improving the signal strength sensed by the light sensing device, and also increasing the area of ​​the line layout region of the pixel structure and reducing the noise in the light sensing device. Therefore, the signal-to-noise ratio of the light sensing device provided by some embodiments of the present disclosure can be improved.

[0076] Furthermore, in the light sensing devices provided in other embodiments of the present disclosure, by ensuring that the bus does not overlap with the semiconductor layer in the photosensitive element in the normal direction of the substrate, the light sensing area of ​​the pixel structure in the normal direction of the substrate can be increased to improve the fill factor of the light sensing device, thereby improving the photoelectric conversion efficiency of the light sensing devices provided in other embodiments of the present disclosure.

[0077] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit it. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or replace some or all of the technical features therein with equivalents. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the scope of the technical solutions of the embodiments of the present invention.

Claims

1. A light sensing device, characterized in that: include: substrate; A first pixel structure, disposed on the substrate and comprising a first photosensitive element, wherein the first photosensitive element has a first semiconductor layer; A second pixel structure, disposed on the substrate and comprising a second light sensing element, wherein the second light sensing element has a second semiconductor layer; as well as The first bus is disposed on the substrate and located between the first semiconductor layer and the second semiconductor layer, wherein the first bus is electrically connected to the first pixel structure and the second pixel structure. 2 . The light sensing device according to claim 1 , wherein the first pixel structure and the second pixel structure are arranged in a mirror image on both sides of the first bus. 3 . The light sensing device according to claim 1 , wherein the first bus line does not overlap with the first semiconductor layer and the second semiconductor layer in a normal direction of the substrate. The light sensing device according to claim 1 , wherein the first bus line comprises a bias line.

5. The light sensing device according to claim 1, further comprising: A second bus is disposed on the substrate and located between the first semiconductor layer and the second semiconductor layer. The second bus does not overlap with the first semiconductor layer and the second semiconductor layer in the normal direction of the substrate, and the second bus at least partially overlaps with the first bus in the normal direction of the substrate. 6 . The light sensing device according to claim 5 , wherein the second bus comprises an active load line or a reset signal line.

7. The light sensing device according to claim 1, further comprising: A third pixel structure, disposed on the substrate and comprising a third photosensitive element, wherein the third photosensitive element has a third semiconductor layer; as well as a third bus disposed on the substrate and located between the first semiconductor layer and the third semiconductor layer, wherein the third bus is electrically connected to the first pixel structure and the third pixel structure, wherein the third bus does not overlap with the first semiconductor layer and the third semiconductor layer in the normal direction of the substrate, The extending direction of the third bus is orthogonal to the extending direction of the first bus. 8 . The light sensing device according to claim 7 , wherein the first pixel structure and the third pixel structure are disposed in a mirror-image manner on two sides of the third bus. 9 . The light sensing device according to claim 7 , wherein the third bus comprises a reset signal line. 10 . The light sensing device according to claim 1 , wherein the first pixel structure further comprises a first transistor, the second pixel structure further comprises a second transistor, the first transistor is coupled to the first light sensing element, and the second transistor is coupled to the second light sensing element.

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