A light emitting diode structure and a method of fabricating the same

Abstract

The application relates to a light-emitting diode structure and a preparation method thereof. The light-emitting diode structure comprises a driving substrate, a light-emitting diode, a thermoelectric refrigeration device and an encapsulating layer. The light-emitting diode comprises a plurality of light-emitting units which are arranged in intervals on the driving substrate; the thermoelectric refrigeration device comprises a heat-conducting cold end, a first heat-conducting hot end, a second heat-conducting hot end, a P-type semiconductor layer and an N-type semiconductor layer; the heat-conducting cold end is arranged in at least part of the intervals of the light-emitting units; the P-type semiconductor layer and the N-type semiconductor layer are arranged in intervals between the heat-conducting cold end and the driving substrate and are in contact with the heat-conducting cold end; the first heat-conducting hot end and the second heat-conducting hot end are arranged in intervals on the driving substrate and are located outside the light-emitting diode, and the P-type semiconductor layer is connected with the first heat-conducting hot end and the N-type semiconductor layer is connected with the second heat-conducting hot end; and the encapsulating layer encapsulates the light-emitting diode and the thermoelectric refrigeration device.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and in particular to a light-emitting diode structure and its fabrication method. Background Technology

[0002] Micro-LEDs are a next-generation display technology. Currently, Micro-LEDs face the problem of poor heat dissipation. Compared to ordinary LED devices, Micro-LEDs have smaller pixel sizes and higher pixel densities, resulting in high heat density that is difficult to dissipate, causing excessively high device temperatures and reduced lifespan. Some related technologies use thermoelectric cooling devices to dissipate heat from the LEDs, but conventional thermoelectric cooling devices are not suitable for Micro-LEDs with pixel sizes on the micrometer scale. Summary of the Invention

[0003] To solve the above-mentioned technical problems, this application provides a light-emitting diode structure, including:

[0004] Drive substrate;

[0005] A light-emitting diode, the light-emitting diode comprising a plurality of light-emitting units spaced apart on the driving substrate;

[0006] A thermoelectric cooling device includes a heat-conducting cold end, a first heat-conducting hot end, a second heat-conducting hot end, a P-type semiconductor layer, and an N-type semiconductor layer; wherein the heat-conducting cold end is at least disposed in the spacing of at least a portion of the light-emitting units; the P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the heat-conducting cold end and the driving substrate, and are respectively in contact with the heat-conducting cold end; the first heat-conducting hot end and the second heat-conducting hot end are spaced apart on the driving substrate and located outside the light-emitting diode, and the P-type semiconductor layer is connected to the first heat-conducting hot end, and the N-type semiconductor layer is connected to the second heat-conducting hot end;

[0007] An encapsulation layer encapsulates the light-emitting diode and the thermoelectric cooling device.

[0008] In some embodiments, the P-type semiconductor layer includes a plurality of P-type semiconductor layer units, the N-type semiconductor layer includes a plurality of N-type semiconductor layer units, and the plurality of P-type semiconductor layer units and the plurality of N-type semiconductor layer units are arranged at intervals in a first direction.

[0009] In some embodiments, the first heat-conducting end and the second heat-conducting end are arranged opposite to each other on both sides of the light-emitting diode in a second direction; the second direction forms a non-zero angle with the first direction.

[0010] In some embodiments, the P-type semiconductor layer covers the surface of the first thermally conductive end near the light-emitting diode, or the P-type semiconductor layer covers the surface of the first thermally conductive end near the light-emitting diode and the surface of the first thermally conductive end away from the driving substrate.

[0011] The N-type semiconductor layer covers the surface of the second thermally conductive end near the light-emitting diode, or the N-type semiconductor layer covers the surface of the second thermally conductive end near the light-emitting diode and the surface of the second thermally conductive end away from the driving substrate.

[0012] In some embodiments, the light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate; the thickness of the N-type semiconductor layer is the same as the thickness of the bonding layer, and the thickness of the P-type semiconductor layer is the same as the thickness of the bonding layer.

[0013] In some embodiments, a portion of the encapsulation layer fills the space between the P-type semiconductor layer and the N-type semiconductor layer; and / or,

[0014] The sidewalls of the light-emitting diode are provided with a passivation layer; and / or,

[0015] The orthogonal projection of the heat-conducting cold end along the thickness direction of the light-emitting diode on the driving substrate does not overlap with the orthogonal projections of the first heat-conducting hot end and the second heat-conducting hot end along the thickness direction of the light-emitting diode on the driving substrate.

[0016] In some embodiments, the heat-conducting cold end covers the outer periphery of each of the light-emitting units;

[0017] The heat-conducting cold end is a light-shielding material layer, and the material of the heat-conducting cold end is gold, aluminum, copper or silver;

[0018] The hot end material is aluminum, copper, silver, molybdenum, or silicon carbide.

[0019] In some embodiments, a conductive layer is further provided on the side of the plurality of light-emitting units away from the driving substrate. The light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate. The driving substrate includes a light-emitting driving circuit connected to the conductive layer and the bonding layer.

[0020] The driving substrate further includes a heat dissipation circuit for connecting to the first heat-conducting end and the second heat-conducting end to provide an electrical signal for the thermoelectric cooling device.

[0021] This application also provides a method for fabricating a light-emitting diode structure, which includes:

[0022] Provide driving substrate;

[0023] A light-emitting diode (LED) and a thermoelectric cooling device are formed on a driving substrate. The LED includes a plurality of light-emitting units spaced apart on the driving substrate. The thermoelectric cooling device includes a thermally conductive cold end, a first thermally conductive hot end, a second thermally conductive hot end, a P-type semiconductor layer, and an N-type semiconductor layer. The thermally conductive cold end is at least located in the spacing between at least a portion of the light-emitting units. The P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the thermally conductive cold end and the driving substrate, and are in contact with the thermally conductive cold end. The first thermally conductive hot end and the second thermally conductive hot end are spaced apart on the driving substrate and located outside the LED. The P-type semiconductor layer is connected to the first thermally conductive hot end, and the N-type semiconductor layer is connected to the second thermally conductive hot end.

[0024] An encapsulation layer is formed, which encapsulates the light-emitting diode and the thermoelectric cooling device.

[0025] In some embodiments, forming the light-emitting diode and the thermoelectric cooling device on the driving substrate includes:

[0026] A light-emitting layer wafer is provided, and the light-emitting layer wafer is bonded to the driving substrate by a bonding layer;

[0027] The light-emitting layer wafer is etched to form multiple spaced light-emitting units;

[0028] The first heat-conducting end and the second heat-conducting end are formed on the outside of the light-emitting diode;

[0029] The P-type semiconductor layer and the N-type semiconductor layer are formed respectively; the P-type semiconductor layer covers at least a portion of the first heat-conducting end; the N-type semiconductor layer covers at least a portion of the second heat-conducting end;

[0030] This forms the heat-conducting cold end.

[0031] In some embodiments, after etching the light-emitting layer wafer to form a plurality of spaced light-emitting units, and before forming the first thermally conductive end and the second thermally conductive end on the outside of the light-emitting diode, the method further includes:

[0032] A passivation layer is formed on the sidewall of the light-emitting unit.

[0033] In some embodiments, after forming the thermally conductive cold end, the method includes:

[0034] A first encapsulation layer is formed, which encapsulates the heat-conducting cold end, the first heat-conducting hot end, the second heat-conducting hot end, and the side of the light-emitting unit, with the side of the light-emitting unit facing away from the driving substrate exposed.

[0035] A conductive layer is disposed on the side of the light-emitting layer opposite to the driving substrate;

[0036] A second encapsulation layer is formed, which encapsulates the first encapsulation layer and the conductive layer; the first encapsulation layer and the second encapsulation layer together form the encapsulation layer.

[0037] The technical solutions provided by the embodiments of this application may include the following beneficial effects:

[0038] As can be seen from the above embodiments, the light-emitting diode structure and its fabrication method in this application integrate the thermoelectric cooling device and the light-emitting diode on the same driving substrate. The heat-conducting cold end of the thermoelectric cooling device is located in the interval of the light-emitting unit of the light-emitting diode, and the heat-conducting hot end of the thermoelectric cooling device is located outside the light-emitting diode. This facilitates the introduction of the heat of the light-emitting diode into the outside of the light-emitting area for dissipation, increases the contact area between the heat-conducting cold end and the heat source to improve heat dissipation efficiency, and at the same time as heat dissipation, it is beneficial to control the size in the thickness direction of the structure and improve the space utilization.

[0039] It should be understood that the above general description and the following detailed description are exemplary and explanatory only, and are not intended to limit this application. Attached Figure Description

[0040] To more clearly illustrate the technical solutions in the embodiments of this application, the accompanying drawings used in the description of the embodiments will be briefly introduced below. Obviously, the accompanying drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0041] Figure 1 This is a partial top view of a light-emitting diode structure provided in one embodiment of this application;

[0042] Figure 2 This is a cross-sectional view of a light-emitting diode structure provided in one embodiment of this application; wherein, the cross-sectional view is along a similar Figure 1 The section is obtained by the A-A' section line shown;

[0043] Figure 3 This is a cross-sectional view of a method for fabricating a light-emitting diode structure according to an embodiment of this application; wherein, the cross-sectional view is along a similar Figure 1 The section obtained by the B-B' section line shown;

[0044] Figure 4 This is a flowchart illustrating a method for fabricating a light-emitting diode structure according to an embodiment of this application.

[0045] Figures 5 to 12The diagram shows the structural diagrams corresponding to different steps in the fabrication of a light-emitting diode structure using the fabrication method of a light-emitting diode structure provided in one embodiment of this application. Detailed Implementation

[0046] The technical solutions in the embodiments (or "implementations") of this application will be clearly and completely described herein with reference to the accompanying drawings. When the following description relates to the drawings, unless otherwise indicated, the same numbers in different drawings represent the same or similar elements.

[0047] If the embodiments of this application contain terms relating to directional indications or positional relationships (such as up, down, left, right, front, back, inside, outside, top, bottom, center, vertical, horizontal, longitudinal, transverse, length, width, counterclockwise, clockwise, axial, radial, circumferential, etc.), such terms are only used to explain the relative positional relationships and movement of the components in a specific posture; if the specific posture changes, the directional indications or positional relationships will also change accordingly. Furthermore, the terms "first" and "second" used in the embodiments of this application are only for descriptive convenience and should not be construed as indicating or implying relative importance.

[0048] The following is in conjunction with the appendix Figures 1 to 12 This paper provides a detailed description of some embodiments of the light-emitting diode structure and its fabrication method according to this application. Unless otherwise specified, the features in the following embodiments can be combined with each other.

[0049] Please refer to Figure 1 and combine when necessary Figure 2 and Figure 3 As shown, the application provides a light-emitting diode structure 100, which includes a driving substrate 10, a light-emitting diode 20, a thermoelectric cooling device 30, and an encapsulation layer 40.

[0050] The light-emitting diode 20 includes a plurality of light-emitting units 201 spaced apart on the driving substrate 10.

[0051] The thermoelectric cooling device 30 includes a thermally conductive cold end 35, a first thermally conductive hot end 31, a second thermally conductive hot end 32, a P-type semiconductor layer 33, and an N-type semiconductor layer 34. The thermally conductive cold end 35 is at least partially disposed in the spacing between the light-emitting units 201. The P-type semiconductor layer 33 and the N-type semiconductor layer 34 are spaced apart between the thermally conductive cold end 35 and the driving substrate 10, and are in contact with the thermally conductive cold end 35. The first thermally conductive hot end 31 and the second thermally conductive hot end 32 are spaced apart on the driving substrate 10 and located outside the light-emitting diode 20. The P-type semiconductor layer 33 is connected to the first thermally conductive hot end 31, and the N-type semiconductor layer 34 is connected to the second thermally conductive hot end 32.

[0052] The encapsulation layer 40 encapsulates the light-emitting diode 20 and the thermoelectric cooling device 30.

[0053] The above-mentioned LED structure integrates the thermoelectric cooling device and the LED on the same driving substrate. The heat-conducting cold end of the thermoelectric cooling device is located in the interval of the light-emitting unit of the LED, and the heat-conducting hot end of the thermoelectric cooling device is located outside the LED. This facilitates the introduction of the heat of the LED into the outside of the light-emitting area for dissipation, increases the contact area between the heat-conducting cold end and the heat source to improve heat dissipation efficiency, and at the same time, it is beneficial to control the dimensions in the thickness direction of the structure, thereby improving space utilization.

[0054] It should be noted that the light-emitting diode structure 100 has a light-emitting area where the light-emitting diode 20 is disposed, and an outer peripheral area located around the light-emitting area. Accordingly, the first heat-conducting end 31 and the second heat-conducting end 32 are disposed in the outer peripheral area.

[0055] In some embodiments, the thermally conductive cold end 35 is a light-shielding material layer and is conductive. The material of the thermally conductive cold end 35 can be gold (Au), aluminum (Al), copper (Cu), or silver (Ag).

[0056] In some embodiments, the hot end material is aluminum, copper, silver, molybdenum, or silicon carbide.

[0057] In this application, the semiconductor material can be bismuth telluride, bismuth selenide, or similar materials. In some embodiments, the material of the P-type semiconductor layer can be bismuth telluride doped with antimony, and the material of the N-type semiconductor layer can be bismuth telluride doped with selenium.

[0058] In some embodiments, the P-type semiconductor layer 33 includes a plurality of P-type semiconductor layer 33 units, and the N-type semiconductor layer 34 includes a plurality of N-type semiconductor layer 34 units. The plurality of P-type semiconductor layer 33 units and the plurality of N-type semiconductor layer 34 units are arranged at intervals in a first direction L.

[0059] In some embodiments, the first heat-conducting end 31 and the second heat-conducting end 32 are arranged opposite to each other on both sides of the light-emitting diode 20 in a second direction W; the second direction W forms a non-zero angle with the first direction L.

[0060] In some embodiments, the first direction L and the second direction W form a right angle. Of course, in other embodiments, the first direction L and the second direction W form other angles.

[0061] The P-type semiconductor layer 33 covers at least a portion of the exposed area of ​​the first thermally conductive hot end 31 on the self-driving substrate 10, thereby connecting the P-type semiconductor layer 33 to the first thermally conductive hot end 31. The N-type semiconductor layer 34 covers at least a portion of the exposed area of ​​the second thermally conductive hot end 32 on the self-driving substrate 10, thereby connecting the N-type semiconductor layer 34 to the second thermally conductive hot end 32.

[0062] Combination Figure 2 As shown, in some embodiments, the P-type semiconductor layer 33 covers at least a portion of the surface of the first thermally conductive end 31 near the light-emitting diode 20 and the surface of the first thermally conductive end 31 away from the driving substrate 10.

[0063] In other embodiments, the P-type semiconductor layer 33 may also cover the surface of the first thermally conductive hot end 31 near the light-emitting diode 20.

[0064] Combination Figure 3 As shown, in some embodiments, the N-type semiconductor layer 34 covers at least a portion of the surface of the second thermally conductive end 32 near the light-emitting diode 20 and the surface of the second thermally conductive end 32 away from the driving substrate 10.

[0065] In other embodiments, the N-type semiconductor layer 34 covers the surface of the second thermally conductive hot end 32 near the light-emitting diode 20.

[0066] In some embodiments, the light-emitting unit 201 includes a light-emitting layer and a bonding layer 21 for fixing the light-emitting layer to the driving substrate 10. The thickness of the N-type semiconductor layer 34 is the same as the thickness of the bonding layer 21, and the thickness of the P-type semiconductor layer 33 is the same as the thickness of the bonding layer 21.

[0067] In some embodiments, a portion of the encapsulation layer 40 is filled between the P-type semiconductor layer 33 and the N-type semiconductor layer 34.

[0068] In some embodiments, the sidewall of the light-emitting diode 20 is provided with a passivation layer 50. The material of the passivation layer 50 may be silicon oxide or other materials.

[0069] In some embodiments, the orthogonal projection of the heat-conducting cold end 35 along the thickness direction T of the light-emitting diode 20 onto the driving substrate 10 does not overlap with the orthogonal projections of the first heat-conducting hot end 31 and the second heat-conducting hot end 32 along the thickness direction T of the light-emitting diode 20 onto the driving substrate 10.

[0070] Combination Figure 2 and Figure 3In some embodiments, the heat-conducting cold end 35 covers the outer periphery of each of the light-emitting units 201.

[0071] In some embodiments, a conductive layer 60 is provided on the side of the plurality of light-emitting units 201 facing away from the driving substrate 10. The light-emitting unit 201 includes a light-emitting layer 22 and a bonding layer 21 for fixing the light-emitting layer 22 to the driving substrate 10. The driving substrate 10 includes a light-emitting driving circuit (not shown) connected to the conductive layer 60 and the bonding layer 21.

[0072] Combination Figure 2 As shown, the driving substrate 10 has an electrical connection post 102 located below the light-emitting unit 201 for electrical connection with the bonding layer 21 of the light-emitting unit 201. The driving substrate also has electrodes for negative and positive terminals connected to the light-emitting driving circuit. The conductive layer 60 can be connected to the negative terminal of the light-emitting driving circuit via a connection circuit or wiring disposed in the peripheral area. The bonding layer 21 of the light-emitting unit 201 can be connected to the positive terminal of the light-emitting driving circuit via the electrical connection post 102.

[0073] The driving substrate 10 further includes a heat dissipation circuit (not shown) for connecting to the first heat-conducting hot end 31 and the second heat-conducting hot end 32 to provide an electrical signal to the thermoelectric cooling device 30. Figure 2 As shown, the driving substrate 10 is provided with electrical connection posts 101 and 103, which are used to connect the first heat-conducting hot end 31 and the second heat-conducting hot end 32 to the heat dissipation circuit, so as to realize the heat dissipation of the thermoelectric cooling device 30.

[0074] Based on the above description, when the thermoelectric cooling device 30 is working, the current provided by the heat dissipation circuit flows sequentially through the second heat-conducting hot end 32, the N-type semiconductor layer 34, the heat-conducting cold end 35, the P-type semiconductor layer 33 and the first heat-conducting hot end 31 to form a circuit, and heat dissipation is achieved in this process.

[0075] It should be noted that each light-emitting unit 201 in this application can be configured to emit light independently.

[0076] Please refer to Figure 4 As shown, this application also provides a method for fabricating a light-emitting diode structure 100, which includes the following steps S110, S120 and S130:

[0077] In step S110, a driving substrate is provided;

[0078] In step S120, a light-emitting diode and a thermoelectric cooling device are formed on a driving substrate; wherein, the light-emitting diode includes a plurality of light-emitting units spaced apart on the driving substrate; the thermoelectric cooling device includes a thermally conductive cold end, a first thermally conductive hot end, a second thermally conductive hot end, a P-type semiconductor layer, and an N-type semiconductor layer; wherein, the thermally conductive cold end is at least disposed in the spacing between at least a portion of the light-emitting units; the P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the thermally conductive cold end and the driving substrate, and are respectively in contact with the thermally conductive cold end; the first thermally conductive hot end and the second thermally conductive hot end are spaced apart on the driving substrate and located outside the light-emitting diode, and the P-type semiconductor layer is connected to the first thermally conductive hot end, and the N-type semiconductor layer is connected to the second thermally conductive hot end;

[0079] In step S120, an encapsulation layer is formed, which encapsulates the light-emitting diode and the thermoelectric cooling device.

[0080] The following is combined with Figures 5 to 12 The fabrication method of the above-mentioned light-emitting diode structure 100 is described in detail.

[0081] like Figure 5 As shown, in step S110, a driving substrate 10 is provided.

[0082] like Figures 5 to 10 As shown, in step S120, a light-emitting diode 20 and a thermoelectric cooling device 30 are formed on the driving substrate 10; wherein, the light-emitting diode 20 includes a plurality of light-emitting units 201 spaced apart on the driving substrate 10; the thermoelectric cooling device 30 includes a thermally conductive cold end 35, a first thermally conductive hot end 31, a second thermally conductive hot end 32, a P-type semiconductor layer 33, and an N-type semiconductor layer 34; wherein, the thermally conductive cold end 35 is at least disposed in the spacing of at least a portion of the light-emitting units 201; the P-type semiconductor layer 33 and the N-type semiconductor layer 34 are spaced apart between the thermally conductive cold end 35 and the driving substrate 10, and are in contact with the thermally conductive cold end 35 respectively; the first thermally conductive hot end 31 and the second thermally conductive hot end 32 are spaced apart on the driving substrate 10 and located outside the light-emitting diode 20, and the P-type semiconductor layer 33 is connected to the first thermally conductive hot end 31, and the N-type semiconductor layer 34 is connected to the second thermally conductive hot end 32.

[0083] like Figures 5 to 10 As shown, in some embodiments, step S120, which forms the light-emitting diode 20 and the thermoelectric cooling device 30 on the driving substrate 10, can be achieved through the following steps:

[0084] like Figure 5As shown, a light-emitting layer wafer 200 is provided, and the light-emitting layer wafer 200 is bonded to the driving substrate 10 through a bonding layer 210.

[0085] like Figure 6 As shown, the light-emitting layer wafer 200 is etched to form a plurality of spaced light-emitting units 201.

[0086] The light-emitting unit 201 can be formed by etching using dry etching or other feasible methods.

[0087] like Figure 8 As shown, the first thermally conductive end 31 and the second thermally conductive end 32 are formed on the outside of the light-emitting diode 20.

[0088] like Figure 9 As shown, a P-type semiconductor layer 33 and an N-type semiconductor layer 34 are formed respectively; the P-type semiconductor layer 33 covers at least a portion of the first thermally conductive hot end 31; and the N-type semiconductor layer 34 covers at least a portion of the second thermally conductive hot end 32.

[0089] The P-type semiconductor layer 33 and the N-type semiconductor layer 34 can be formed by etching corresponding material layers. Alternatively, one of the P-type semiconductor layer 33 and the N-type semiconductor layer 34 can be formed first, followed by the other.

[0090] like Figure 10 As shown, the heat-conducting cold end 35 is formed.

[0091] like Figure 7 As shown, in some embodiments, after etching the light-emitting layer wafer 200 to form a plurality of spaced light-emitting units 201, and before forming the first thermally conductive end 31 and the second thermally conductive end 32 on the outside of the light-emitting diode 20, the method further includes:

[0092] A passivation layer 50 is formed on the sidewall of the light-emitting unit 201.

[0093] like Figure 11 and Figure 12 As shown, in step S130, an encapsulation layer 40 is formed, which encapsulates the light-emitting diode 20 and the thermoelectric cooling device 30.

[0094] In some embodiments, after forming the thermally conductive cold end 35, the method includes the following steps S131 to S133:

[0095] like Figure 11As shown, in step S131, a first encapsulation layer 41 is formed, which encapsulates the heat-conducting cold end 35, the first heat-conducting hot end 31, the second heat-conducting hot end 32, and the side of the light-emitting unit 201, while the side of the light-emitting unit 201 facing away from the driving substrate 10 is exposed.

[0096] like Figure 12 As shown, in step S132, a conductive layer 60 is provided on the side of the light-emitting layer 22 that is away from the driving substrate 10.

[0097] In step S133, a second encapsulation layer 42 is formed, which covers the first encapsulation layer 41 and the conductive layer 60; the first encapsulation layer 41 and the second encapsulation layer 42 form the encapsulation layer 40.

[0098] The encapsulation layer 40 can be made of one or more of epoxy molding compound, silicone, polyimide, organosilicon resin, polybenzoxazole, and polyester resin. The first encapsulation layer 41 and the second encapsulation layer 42 are made of corresponding materials, and the materials of the first encapsulation layer 41 and the second encapsulation layer 42 can be the same or different.

[0099] It should be noted that the technical solutions or features described in the above embodiments can be combined or supplemented with each other without conflict. The scope of protection of this application is not limited to the precise structures described in the above embodiments and shown in the accompanying drawings; all modifications, equivalent substitutions, improvements, etc., made within the spirit and principles of this application should be included within the scope of protection of this application.

Claims

1. A light-emitting diode structure, characterized in that, include: Drive substrate; A light-emitting diode, the light-emitting diode comprising a plurality of light-emitting units spaced apart on the driving substrate; The light-emitting diode is a micro light-emitting diode; A thermoelectric cooling device includes a thermally conductive cold end, a first thermally conductive hot end, a second thermally conductive hot end, a P-type semiconductor layer, and an N-type semiconductor layer. The thermally conductive cold end is at least disposed in the spacing between at least a portion of the light-emitting units. The P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the thermally conductive cold end and the driving substrate, and are respectively in contact with the thermally conductive cold end. The first thermally conductive hot end and the second thermally conductive hot end are spaced apart on the driving substrate and located outside the light-emitting diode. The P-type semiconductor layer is connected to the first thermally conductive hot end, and the N-type semiconductor layer is connected to the second thermally conductive hot end. The thermally conductive cold end covers the outer periphery of each light-emitting unit. The thermally conductive cold end is a light-shielding material layer. An encapsulation layer encapsulates the light-emitting diode and the thermoelectric cooling device.

2. The light-emitting diode structure as described in claim 1, characterized in that, The P-type semiconductor layer includes a plurality of P-type semiconductor layer units, and the N-type semiconductor layer includes a plurality of N-type semiconductor layer units. The plurality of P-type semiconductor layer units and the plurality of N-type semiconductor layer units are arranged at intervals in a first direction.

3. The light-emitting diode structure as described in claim 2, characterized in that, The first and second heat-conducting ends are arranged opposite each other on both sides of the light-emitting diode in a second direction; the second direction forms a non-zero angle with the first direction.

4. The light-emitting diode structure as described in claim 1, characterized in that, The P-type semiconductor layer covers the surface of the first thermally conductive end near the light-emitting diode, or the P-type semiconductor layer covers the surface of the first thermally conductive end near the light-emitting diode and the surface of the first thermally conductive end away from the driving substrate. The N-type semiconductor layer covers the surface of the second thermally conductive end near the light-emitting diode, or the N-type semiconductor layer covers the surface of the second thermally conductive end near the light-emitting diode and the surface of the second thermally conductive end away from the driving substrate.

5. The light-emitting diode structure as described in claim 1, characterized in that, The light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate; the thickness of the N-type semiconductor layer is the same as the thickness of the bonding layer, and the thickness of the P-type semiconductor layer is the same as the thickness of the bonding layer.

6. The light-emitting diode structure as described in claim 1, characterized in that, The encapsulation layer partially fills the space between the P-type semiconductor layer and the N-type semiconductor layer; and / or, The sidewalls of the light-emitting diode are provided with a passivation layer; and / or, The orthogonal projection of the heat-conducting cold end along the thickness direction of the light-emitting diode on the driving substrate does not overlap with the orthogonal projections of the first heat-conducting hot end and the second heat-conducting hot end along the thickness direction of the light-emitting diode on the driving substrate.

7. The light-emitting diode structure as described in claim 1, characterized in that, The material of the heat-conducting cold end is gold, aluminum, copper, or silver; The materials of the first and second heat-conducting ends are aluminum, copper, silver, molybdenum or silicon carbide.

8. The light-emitting diode structure as described in claim 1, characterized in that, A conductive layer is also provided on the side of the plurality of light-emitting units away from the driving substrate. Each light-emitting unit includes a light-emitting layer and a bonding layer for fixing the light-emitting layer to the driving substrate. The driving substrate includes a light-emitting driving circuit connected to the conductive layer and the bonding layer. The driving substrate further includes a heat dissipation circuit for connecting to the first heat-conducting end and the second heat-conducting end to provide an electrical signal for the thermoelectric cooling device.

9. A method for fabricating a light-emitting diode structure, characterized in that, include: Provide driving substrate; A light-emitting diode (LED) and a thermoelectric cooling device are formed on a driving substrate. The LED comprises a plurality of light-emitting units spaced apart on the driving substrate. The LED is a microLED. The thermoelectric cooling device comprises a thermally conductive cold end, a first thermally conductive hot end, a second thermally conductive hot end, a P-type semiconductor layer, and an N-type semiconductor layer. The thermally conductive cold end is at least disposed in the spacing between at least a portion of the light-emitting units. The P-type semiconductor layer and the N-type semiconductor layer are spaced apart between the thermally conductive cold end and the driving substrate, and are in contact with the thermally conductive cold end. The first thermally conductive hot end and the second thermally conductive hot end are spaced apart on the driving substrate and located outside the LED. The P-type semiconductor layer is connected to the first thermally conductive hot end, and the N-type semiconductor layer is connected to the second thermally conductive hot end. The thermally conductive cold end covers the outer periphery of each light-emitting unit. The thermally conductive cold end is a light-shielding material layer. An encapsulation layer is formed, which encapsulates the light-emitting diode and the thermoelectric cooling device.

10. The method for fabricating a light-emitting diode structure as described in claim 9, characterized in that, The formation of the light-emitting diode and thermoelectric cooling device on the driving substrate includes: A light-emitting layer wafer is provided, and the light-emitting layer wafer is bonded to the driving substrate by a bonding layer; The light-emitting layer wafer is etched to form multiple spaced light-emitting units; The first heat-conducting end and the second heat-conducting end are formed on the outside of the light-emitting diode; The P-type semiconductor layer and the N-type semiconductor layer are formed respectively; the P-type semiconductor layer covers at least a portion of the first heat-conducting end; the N-type semiconductor layer covers at least a portion of the second heat-conducting end; This forms the heat-conducting cold end.

11. The method for fabricating a light-emitting diode structure as described in claim 10, characterized in that, After etching the light-emitting layer wafer to form multiple spaced light-emitting units, and before forming the first thermally conductive end and the second thermally conductive end on the outside of the light-emitting diode, the method further includes: A passivation layer is formed on the sidewall of the light-emitting unit.

12. The method for fabricating a light-emitting diode structure as described in claim 10, characterized in that, After forming the thermally conductive cold end, the method includes: A first encapsulation layer is formed, which encapsulates the heat-conducting cold end, the first heat-conducting hot end, the second heat-conducting hot end, and the side of the light-emitting unit, with the side of the light-emitting unit facing away from the driving substrate exposed. A conductive layer is disposed on the side of the light-emitting layer opposite to the driving substrate; A second encapsulation layer is formed, which encapsulates the first encapsulation layer and the conductive layer; the first encapsulation layer and the second encapsulation layer together form the encapsulation layer.

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