Non-injection light-emitting device structure based on current regulation and control

Abstract

The invention discloses an injection-free light-emitting device structure based on current regulation and control, and relates to the field of photoelectric display, and the light-emitting device structure comprises an electronic driving electrode layer, a first injection-free insulating dielectric layer, a light-emitting composite layer, a second injection-free insulating dielectric layer, a hole driving electrode layer, a current gate transmission layer and a current gate electrode layer. A time direct current bias signal is arranged between the current gate electrode layer and the electron driving electrode layer and / or the hole driving electrode layer; the direct-current bias signal is used for regulating and controlling the response speed or the response amount of the electrons and the holes in the light-emitting composite layer driven by an alternating-current signal to be separated and compounded in the first half cycle and / or the second half cycle; the response speed or the response amount of separation and recombination of the electrons and the holes in the light-emitting composite layer tends to be balanced, and the electron hole light-emitting composite efficiency of the injection-free light-emitting device can be effectively improved through the injection-free light-emitting device and the preparation method of the injection-free light-emitting device.

Description

Technical Field

[0001] The invention relates to the field of optoelectronic display, and in particular to a non-injection light-emitting device structure based on current regulation. Background Art

[0002] The non-injected light-emitting device is a device that sets the light-emitting layer between the insulating layers, intermittently separates electron holes from the light-emitting layer through the electric field effect, and emits light by recombining the electron holes, while the externally driven carriers are not directly injected into the light-emitting layer. In the prior art, due to the material selection of the light-emitting layer itself, the degree of separation of electrons and holes is different in the process of separating electrons and holes, including the separation travel distance of the two and the separation amount under the same separation travel distance; similarly, in the process of electron and hole recombination, under external drive, the mobility of the two when they recombine is also different; based on this, in the recombination process, there is a difference between the migration efficiency of one side and the other side, which affects the composite reflection efficiency.

[0003] Therefore, how to effectively improve the separation and recombination process of charge carriers and balance the mobility of electrons and holes without significantly increasing costs, thereby improving the luminous efficiency of non-injection light-emitting devices, is an important issue that needs to be urgently addressed in the current display technology field. Summary of the invention

[0004] In view of the shortcomings of the prior art, the technical problem to be solved by the present invention is to provide a non-injection light-emitting device structure based on current regulation, aiming to improve the composite luminous efficiency of the non-injection light-emitting device through current gate regulation.

[0005] To achieve the above object, the present invention provides a non-injection light-emitting device structure based on current regulation, the light-emitting device structure comprising:

[0006] A non-injection device composite unit and a current gate control unit; the current gate control unit is arranged on at least one side of the non-injection device composite unit; the non-injection device composite structure comprises: an electron driving electrode layer, a first non-injection insulating medium layer, a light-emitting composite layer, a second non-injection insulating medium layer, and a hole driving electrode layer; the current gate control unit is arranged on the electron driving layer side and / or the hole driving electrode layer side;

[0007] The hole driving electrode layer and the electron driving electrode layer apply an AC signal, and the AC signal is used to drive the light-emitting composite layer to be in an energy storage state in the first half cycle to separate electrons and holes, and drive the light-emitting composite layer to be in a composite state in the second half cycle to recombine electrons and holes to emit light; wherein the response speed or response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer driven by the AC signal is different;

[0008] The current gate control unit includes a current gate transmission layer and a current gate electrode layer, and a DC bias signal is provided between the current gate electrode layer and the corresponding electron driving electrode layer and / or the hole driving electrode layer adjacent to the current gate transmission layer; the DC bias signal is used to control the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer driven by the AC signal in the first half cycle and / or the second half cycle, so that the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer tends to be balanced.

[0009] In a specific embodiment, in the first half cycle, the electron driving electrode layer applies a positive potential relative to the hole driving electrode layer, the electrons in the light-emitting composite layer migrate to the adjacent first non-injection insulating medium layer, and the holes in the light-emitting composite layer migrate to the adjacent second non-injection insulating medium layer, completing the electron and hole energy storage; in the second half cycle, the hole driving electrode layer applies a positive potential relative to the electron driving electrode layer, and the electrons and holes in the light-emitting composite layer are controlled to recombine and emit light.

[0010] The technical solution is based on a non-injected carrier light-emitting device, and a current control gate structure is set at one end or both ends of the light-emitting device. The electric field at both ends of the light-emitting device is biased and controlled by current injection, so as to realize the control of the mobility of electron and hole separation and recombination in the light-emitting composite layer under the original device driving conditions, thereby realizing the control of the luminous efficiency of the light-emitting device, solving the problem that the luminous efficiency of the light-emitting device is affected by the mismatch of single-sided carrier injection caused by the unbalanced electron-hole recombination mobility in the light-emitting functional layer. Based on the light-emitting device structure of the present invention, the luminous efficiency can be effectively improved and energy can be saved.

[0011] Due to the characteristics of the light-emitting layer material, electrons and holes are affected by the electric field. The carriers with poor controlled mobility cannot effectively pull the carriers to the two sides of the light-emitting composite layer during the separation and energy storage stage, resulting in imbalance. Similarly, they cannot be effectively pushed to the composite area for recombination during the recombination stage, resulting in low recombination efficiency. By adding a current gate structure, the carriers with poor mobility can be pulled and pushed away, thereby improving the overall luminous efficiency.

[0012] In a specific embodiment, in the light-emitting composite layer, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit is disposed on one side of the hole driving electrode layer, then the DC bias signal is configured as:

[0013] In the first half cycle, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to reduce the hole separation response amount in the light emitting composite layer to improve the light emitting composite efficiency;

[0014] And / or in the second half period, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to reduce the hole recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

[0015] In a specific embodiment, in the light-emitting composite layer, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit is disposed on one side of the hole driving electrode layer, then the DC bias signal is configured as:

[0016] In the first half cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to increase the hole separation response amount in the light emitting composite layer to improve the light emitting composite efficiency;

[0017] And / or in the second half period, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to increase the hole recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

[0018] In a specific embodiment, in the light-emitting composite layer, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit is disposed on one side of the electron driving electrode layer, then the DC bias signal is configured as:

[0019] In the first half cycle, the current gate electrode layer applies a positive phase potential relative to the electron driving electrode layer to increase the electron separation response amount in the light emitting composite layer to improve the light emitting composite efficiency;

[0020] And / or in the second half period, the current gate electrode layer applies a negative phase potential relative to the electron driving electrode layer to increase the electron recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

[0021] In a specific embodiment, in the light-emitting composite layer, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit is disposed on one side of the electron driving electrode layer, then the DC bias signal is configured as follows:

[0022] In the first half cycle, the current gate electrode layer applies a negative phase potential relative to the electron driving electrode layer to reduce the electron separation response amount in the light emitting composite layer to improve the light emitting composite efficiency;

[0023] And / or in the second half period, the current gate electrode layer applies a positive phase potential relative to the electron driving electrode layer to reduce the electron recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

[0024] In a specific implementation, a current limiting resistor is further provided in the loop of the DC bias signal.

[0025] In this technical solution, the current limiting resistor is used to control the transmission layer current of the current regulating grid to prevent the inter-electrode current from being too large and burning out the device.

[0026] In a specific embodiment, the current gate control unit includes a first current gate control unit arranged on the side of the electron driving electrode layer of the non-injection device composite unit and a second current gate control unit arranged on the side of the hole driving electrode layer of the non-injection device composite unit; the first current gate control unit includes: a first current gate transmission layer and a first current gate electrode layer adjacent to the side of the electron driving electrode layer; the second current gate control unit includes: a second current gate transmission layer and a second current gate electrode layer adjacent to the side of the hole driving electrode layer.

[0027] In a specific embodiment, the light-emitting composite layer is LED, OLED or QLED.

[0028] In a specific implementation, the AC signal includes: a sine wave signal, a square wave signal, and a triangle wave signal.

[0029] Beneficial effects of the present invention: 1) The present invention is based on a non-injected carrier light-emitting device, and a current control gate structure is set at one or both ends of the light-emitting device. The electric field at both ends of the light-emitting device is biased and regulated by current injection, so as to achieve the mobility of separation and recombination of electrons and holes in the light-emitting composite layer under the original device driving conditions, thereby achieving the regulation of the light-emitting efficiency of the light-emitting device, solving the problem that the light-emitting device affects the light-emitting efficiency due to the unbalanced electron-hole recombination mobility in the light-emitting functional layer. Based on the light-emitting device structure of the present invention, the light-emitting efficiency can be effectively improved and energy can be saved. 2) Due to the characteristics of the light-emitting layer material, electrons and holes are affected by the electric field, and the carriers with poor controlled mobility cannot effectively pull the carriers to the two sides of the light-emitting composite layer in the separation and energy storage stage, and present an imbalance. Similarly, they cannot be effectively pushed to the recombination area for recombination in the recombination stage, resulting in low recombination efficiency. By adding a current gate structure, the carriers with poor mobility can be pulled and pushed away, thereby improving the overall light-emitting efficiency. 3) In the present invention, during the first half cycle and the second half cycle of the driving process, corresponding signals can be set for the bias signals respectively, thereby optimizing the carriers with poor mobility in the whole cycle, thereby achieving the ability to pull when separated and push when recombined, thereby improving the luminous efficiency. BRIEF DESCRIPTION OF THE DRAWINGS

[0030] Figure 1 It is a schematic structural diagram of a current-controlled parallel-gate light-emitting device in a specific embodiment of the present invention;

[0031] Figure 2 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the first half-cycle energy storage state under scenario 1 of the present invention;

[0032] Figure 3 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the second half-cycle composite state under scenario 1 of the present invention;

[0033] Figure 4 This is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the first half-cycle energy storage state under scenario 2 of the present invention;

[0034] Figure 5 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the second half-cycle composite state under scenario 2 of the present invention;

[0035] Figure 6 This is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the first half-cycle energy storage state under scenario 3 of the present invention;

[0036] Figure 7 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the second half-cycle composite state under scenario 3 of the present invention;

[0037] Figure 8 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the first half-cycle energy storage state under scenario 4 of the present invention;

[0038] Fig. 9 It is a schematic diagram of the movement of electrons and holes in the light-emitting composite layer of the current-controlled parallel-gate light-emitting device structure in the second half-cycle composite state under scenario 4 of the present invention;

[0039] Fig.10 It is a schematic diagram of the structure of a parallel-gate light-emitting device controlled by dual current gates in one embodiment of the present invention. DETAILED DESCRIPTION

[0040] The embodiments of the present invention are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present invention, and cannot be understood as limiting the present invention.

[0041] In the description of this patent, it should be understood that the terms "center", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", etc., indicating the orientation or position relationship, are based on the orientation or position relationship shown in the drawings, and are only for the convenience of describing this patent and simplifying the description, rather than indicating or implying that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this patent.

[0042] In the description of this patent, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", and "set" should be understood in a broad sense, for example, it can be fixedly connected or set, or it can be detachably connected or set, or connected or set in one piece. For ordinary technicians in this field, the specific meanings of the above terms in this patent can be understood according to specific circumstances.

[0043] The embodiment of the present invention provides a current-controlled parallel-gate light-emitting device structure, such as Figure 1-Figure 10 As shown, the light emitting device structure includes:

[0044] A non-injection device composite unit 100 and a current gate control unit 200; the current gate control unit 200 is arranged on at least one side of the non-injection device composite unit 100; the non-injection device composite structure includes: an electron drive electrode layer 101, a first non-injection insulating dielectric layer 102, a light-emitting composite layer 103, a second non-injection insulating dielectric layer 104, and a hole drive electrode layer 105; the current gate control unit 200 is arranged on the electron drive layer side and / or the hole drive electrode layer 105 side;

[0045] The hole driving electrode layer 105 and the electron driving electrode layer 101 apply an AC signal 301, and the AC signal 301 is used to drive the light emitting composite layer 103 to be in an energy storage state in the first half cycle to separate electrons and holes, and to drive the light emitting composite layer 103 to be in a composite state in the second half cycle to recombine electrons and holes to emit light; wherein the response speed or response amount of the separation and recombination of the electrons and holes in the light emitting composite layer 103 driven by the AC signal 301 is different;

[0046] The current gate control unit 200 includes a current gate transmission layer 201 and a current gate electrode layer 202, and a DC bias signal 302 is provided between the current gate electrode layer 202 and the corresponding electron driving electrode layer 101 and / or the hole driving electrode layer 105 adjacent to the current gate transmission layer 201; the DC bias signal 302 is used to control the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer 103 driven by the AC signal 301 in the first half cycle and / or the second half cycle, so that the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer 103 tends to be balanced.

[0047] In this embodiment, in the first half cycle, the electron driving electrode layer 101 applies a positive phase potential relative to the hole driving electrode layer 105, the electrons in the light-emitting composite layer 103 migrate to the adjacent first non-injection insulating medium layer 102, and the holes in the light-emitting composite layer 103 migrate to the adjacent second non-injection insulating medium layer 104, completing the electron and hole energy storage; in the second half cycle, the hole driving electrode layer 105 applies a positive phase potential relative to the electron driving electrode layer 101, and the electrons and holes in the light-emitting composite layer 103 are controlled to recombine and emit light.

[0048] In this embodiment, in terms of the classification of the regulated carriers, the current gate control unit 200 can be set on the electron drive electrode layer 101 side or on the hole drive electrode layer 105, and the regulated carriers are different accordingly. In terms of the magnitude of the regulated carrier mobility, the current gate control unit 200 can be set on the side with a faster migration response or on the side with a slower migration response. Based on the above two dimensions, in this embodiment, the following four scenarios are extended.

[0049] Scenario 1

[0050] like Figure 2 , Figure 3 As shown, in the light-emitting composite layer 103, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit 200 is disposed on one side of the hole driving electrode layer 105, then the DC bias signal 302 is configured as:

[0051] In the first half cycle, the current gate electrode layer 202 applies a positive phase potential relative to the hole driving electrode layer 105 to reduce the hole separation response amount in the light emitting composite layer 103 to improve the light emitting composite efficiency;

[0052] And / or in the second half period, the current gate electrode layer 202 applies a negative phase potential relative to the hole driving electrode layer 105 to reduce the hole recombination response amount in the light emitting composite layer 103 to improve the light emitting recombination efficiency.

[0053] It is worth mentioning that in each scenario, the current gate regulation can be performed only on the first half cycle or the second half cycle, or both can be regulated. Preferably, both are regulated together to reduce the regulation drive voltage.

[0054] Scenario 2

[0055] like Figure 4 , Figure 5 As shown, in the light-emitting composite layer 103, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit 200 is disposed on one side of the hole driving electrode layer 105, then the DC bias signal 302 is configured as:

[0056] In the first half cycle, the current gate electrode layer 202 applies a negative phase potential relative to the hole driving electrode layer 105 to increase the hole separation response amount in the light emitting composite layer 103 to improve the light emitting composite efficiency;

[0057] And / or in the second half period, the current gate electrode layer 202 applies a positive phase potential relative to the hole driving electrode layer 105 to increase the hole recombination response amount in the light emitting composite layer 103 to improve the light emitting recombination efficiency.

[0058] Scene 3

[0059] like Figure 6 , Figure 7 As shown, in the light-emitting composite layer 103, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit 200 is disposed on one side of the electron driving electrode layer 101, then the DC bias signal 302 is configured as:

[0060] In the first half cycle, the current gate electrode layer 202 applies a positive phase potential relative to the electron driving electrode layer 101 to increase the electron separation response amount in the light emitting composite layer 103 to improve the light emitting composite efficiency;

[0061] And / or in the second half period, the current gate electrode layer 202 applies a negative phase potential relative to the electron driving electrode layer 101 to increase the electron recombination response amount in the light emitting composite layer 103 to improve the light emitting recombination efficiency.

[0062] Scene 4

[0063] like Figure 8 , Fig. 9As shown, in the light-emitting composite layer 103, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit 200 is disposed on one side of the electron driving electrode layer 101, then the DC bias signal 302 is configured as:

[0064] In the first half cycle, the current gate electrode layer 202 applies a negative phase potential relative to the electron driving electrode layer 101 to reduce the electron separation response amount in the light emitting composite layer 103 to improve the light emitting composite efficiency;

[0065] And / or in the second half period, the current gate electrode layer 202 applies a positive phase potential relative to the electron driving electrode layer 101 to reduce the electron recombination response amount in the light emitting composite layer 103 to improve the light emitting recombination efficiency.

[0066] In this embodiment, a current limiting resistor is further provided in the loop of the DC bias signal 302 .

[0067] In this embodiment, current gate regulation can be respectively provided on both sides of the light emitting device without an injector.

[0068] like Fig.10 As shown, typically, the current gate control unit 200 includes a first current gate control unit 400 arranged on the side of the electron driving electrode layer 101 of the non-injection device composite unit 100 and a second current gate control unit 500 arranged on the side of the hole driving electrode layer 105 of the non-injection device composite unit 100; the first current gate control unit 400 includes: a first current gate transmission layer 401 and a first current gate electrode layer 402 adjacent to the side of the electron driving electrode layer 101; the second current gate control unit 500 includes: a second current gate transmission layer 501 and a second current gate electrode layer 502 adjacent to the side of the hole driving electrode 105 layer.

[0069] In this embodiment, the light emitting composite layer 103 includes but is not limited to LED, OLED or QLED.

[0070] In this embodiment, the AC signal 301 includes but is not limited to a sine wave signal, a square wave signal, and a triangle wave signal.

[0071] The preferred specific embodiments of the present invention are described in detail above. It should be understood that a person skilled in the art can make many modifications and changes based on the concept of the present invention without creative work. Therefore, any technical solution that can be obtained by a person skilled in the art through logical analysis, reasoning or limited experiments based on the concept of the present invention on the basis of the prior art should be within the scope of protection determined by the claims.

Claims

1. A non-injection light-emitting device structure based on current regulation, characterized in that: The light emitting device structure comprises: A non-injection device composite unit and a current gate control unit; the current gate control unit is arranged on at least one side of the non-injection device composite unit; the non-injection device composite structure comprises: an electron driving electrode layer, a first non-injection insulating medium layer, a light-emitting composite layer, a second non-injection insulating medium layer, and a hole driving electrode layer; the current gate control unit is arranged on the electron driving layer side and / or the hole driving electrode layer side; The hole driving electrode layer and the electron driving electrode layer apply an AC signal, and the AC signal is used to drive the light-emitting composite layer to be in an energy storage state in the first half cycle to separate electrons and holes, and drive the light-emitting composite layer to be in a composite state in the second half cycle to recombine electrons and holes to emit light; wherein the response speed or response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer driven by the AC signal is different; The current gate control unit includes a current gate transmission layer and a current gate electrode layer, and a DC bias signal is provided between the current gate electrode layer and the corresponding electron driving electrode layer and / or the hole driving electrode layer adjacent to the current gate transmission layer; the DC bias signal is used to control the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer driven by the AC signal in the first half cycle and / or the second half cycle, so that the response speed or the response amount of the separation and recombination of the electrons and holes in the light-emitting composite layer tends to be balanced.

2. A non-injection light-emitting device structure based on current regulation as claimed in claim 1, characterized in that: In the first half cycle, the electron driving electrode layer applies a positive phase potential relative to the hole driving electrode layer, the electrons in the light emitting composite layer migrate to the adjacent first non-injection insulating medium layer, and the holes in the light emitting composite layer migrate to the adjacent second non-injection insulating medium layer, completing the electron and hole energy storage; In the second half period, the hole driving electrode layer applies a positive phase potential relative to the electron driving electrode layer, and the electrons and holes in the light emitting composite layer are controlled to recombine and emit light.

3. A non-injection light-emitting device structure based on current regulation as claimed in claim 1, characterized in that: In the light-emitting composite layer, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit is arranged on one side of the hole driving electrode layer, then the DC bias signal is configured as follows: In the first half cycle, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to reduce the hole separation response amount in the light emitting composite layer to improve the light emitting composite efficiency; And / or in the second half period, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to reduce the hole recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

4. The structure of a non-injection light-emitting device based on current regulation as claimed in claim 1, characterized in that: In the light-emitting composite layer, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit is arranged on one side of the hole driving electrode layer, then the DC bias signal is configured as follows: In the first half cycle, the current gate electrode layer applies a negative phase potential relative to the hole driving electrode layer to increase the hole separation response amount in the light emitting composite layer to improve the light emitting composite efficiency; And / or in the second half period, the current gate electrode layer applies a positive phase potential relative to the hole driving electrode layer to increase the hole recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

5. The non-injection light-emitting device structure based on current regulation as claimed in claim 1, characterized in that: In the light-emitting composite layer, the response speed or the response amount of the holes is greater than that of the electrons, and the current gate control unit is arranged on one side of the electron driving electrode layer, then the DC bias signal is configured as: In the first half cycle, the current gate electrode layer applies a positive phase potential relative to the electron driving electrode layer to increase the electron separation response amount in the light emitting composite layer to improve the light emitting composite efficiency; And / or in the second half period, the current gate electrode layer applies a negative phase potential relative to the electron driving electrode layer to increase the electron recombination response amount in the light emitting composite layer to improve the light emitting recombination efficiency.

6. The non-injection light-emitting device structure based on current regulation according to claim 1, characterized in that: In the light-emitting composite layer, the response speed or the response amount of the holes is smaller than that of the electrons, and the current gate control unit is arranged on one side of the electron driving electrode layer, then the DC bias signal is configured as follows: In the first half cycle, the current gate electrode layer applies a negative phase potential relative to the electron driving electrode layer to reduce the electron separation response amount in the light emitting composite layer to improve the light emitting composite efficiency; And / or in the second half period, the current gate electrode layer applies a positive phase potential relative to the electron driving electrode layer to reduce the electron recombination response amount in the light-emitting composite layer to improve the light-emitting recombination efficiency.

7. The non-injection light-emitting device structure based on current regulation according to claim 1, characterized in that: A current limiting resistor is also provided in the loop of the DC bias signal.

8. The non-injection light-emitting device structure based on current regulation as claimed in claim 1, characterized in that: The current gate control unit includes a first current gate control unit disposed on one side of the electron driving electrode layer of the non-injection device composite unit and a second current gate control unit disposed on one side of the hole driving electrode layer of the non-injection device composite unit; The first current gate control unit includes: a first current gate transmission layer and a first current gate electrode layer adjacent to the electron driving electrode layer; the second current gate control unit includes: a second current gate transmission layer and a second current gate electrode layer adjacent to the hole driving electrode layer.

9. The non-injection light-emitting device structure based on current regulation as claimed in claim 1, characterized in that: The light-emitting composite layer is LED, OLED or QLED.

10. The non-injection light-emitting device structure based on current regulation according to claim 1, characterized in that: The AC signal includes: a sine wave signal, a square wave signal, and a triangle wave signal.

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