Perovskite cell preparation method and perovskite cell

Abstract

The invention provides a preparation method of a perovskite battery and the perovskite battery. The preparation method of the perovskite cell comprises the following steps: providing a substrate, wherein a transparent conductive layer is arranged on the substrate; forming a hole transport layer on one side, deviating from the substrate, of the transparent conductive layer; forming a perovskite particle layer on one side, away from the substrate, of the hole transport layer; forming a perovskite thin film on one side, deviating from the substrate, of the hole transport layer, wherein the perovskite thin film covers the perovskite particle layer; the perovskite particle layer is arranged on one side of the hole transport layer, so that the adhesive force of the first perovskite precursor solution on the hole transport layer during preparation of the perovskite thin film is increased, and the coverage rate of the perovskite thin film on the hole transport layer is increased.

Description

Technical Field

[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a perovskite cell, and a method for manufacturing a perovskite cell and a stacked cell. Background Art

[0002] Perovskite solar cells can be easily prepared with a high consistency and repeatability perovskite film layer by spin coating. The typical process of preparing a perovskite solar cell with a self-assembled monolayer SAMs (Surface Modification Agents) as a hole transport layer by spin coating is: 1. Spin coating a solution containing SAMs material on a conductive substrate and annealing and washing; 2. Spin coating a perovskite precursor solution on the surface of the SAMs material and annealing to obtain a perovskite film layer; 3. Spin coating an electron transport layer and an interface barrier layer material on the perovskite film layer; 4. Prepare a metal electrode. Due to the poor wettability of the perovskite precursor solution on the surface of the SAMs material, the coverage of the perovskite film layer prepared by spin coating is low (20-60%). The low coverage significantly reduces the yield rate, which brings difficulties to the practical application of SAMs. Summary of the invention

[0003] The present application provides a method for preparing a perovskite battery, a method for manufacturing a perovskite battery and a stacked battery, so as to solve the problems of low coverage and poor adhesion of the perovskite film of the perovskite battery in the related art.

[0004] According to one aspect of the present application, a method for preparing a perovskite battery is provided, comprising the following steps: providing a substrate, on which a transparent conductive layer is disposed; forming a hole transport layer on the side of the transparent conductive layer facing away from the substrate; forming a perovskite particle layer on the side of the hole transport layer facing away from the substrate; forming a perovskite film on the side of the hole transport layer facing away from the substrate, wherein the perovskite film covers the perovskite particle layer.

[0005] Optionally, the thickness of the perovskite particle layer is 20 nm to 500 nm.

[0006] Optionally, the volume density of the perovskite particle layer is 15 ppi to 100 ppi.

[0007] Optionally, the particle size of the perovskite particles in the perovskite particle layer is 20 nm to 500 nm.

[0008] Optionally, the step of forming a perovskite particle layer on the side of the hole transport layer facing away from the substrate includes: spraying a first perovskite precursor solution on the side of the hole transport layer facing away from the substrate using a spraying process; annealing the first perovskite precursor solution so that the first perovskite precursor solution crystallizes and precipitates perovskite particles to form a perovskite particle layer.

[0009] Optionally, the step of forming a perovskite particle layer on the side of the hole transport layer facing away from the substrate also includes: coating a first perovskite precursor solution on the surface of the hole transport layer using an inkjet printing process; annealing the first perovskite precursor solution so that the first perovskite precursor droplets crystallize and precipitate perovskite particles to form a perovskite particle layer.

[0010] Optionally, the annealing temperature of the first perovskite precursor solution is 80°C to 170°C.

[0011] Optionally, the spraying process has a spraying speed of 1 ml / min to 10 ml / min and a spraying distance of 10 cm to 30 cm.

[0012] Optionally, the inkjet printing process has an inkjet printing speed of 1 cm / s to 10 cm / s.

[0013] Optionally, the step of preparing a first perovskite precursor solution includes: mixing a perovskite material with a mixed solvent to form a first perovskite precursor solution, wherein the mixed solvent contains an organic solvent, and the organic solvent is any one or more of methyl pyrrolidone, dimethylformamide, acetone, ethyl acetate, methanol and ethanol.

[0014] Optionally, the ratio of the organic solvent to the first perovskite precursor solution is 1:(1-3).

[0015] Optionally, after the step of forming a perovskite film on the side of the hole transport layer facing away from the substrate, the method for preparing a perovskite cell further includes: sequentially forming an electron transport layer and an electrode layer on the side of the perovskite film facing away from the substrate, so that the electrode layer is located on the side of the electron transport layer facing away from the perovskite film.

[0016] According to another aspect of the present application, a perovskite cell is provided, which is prepared by the above-mentioned perovskite cell preparation method.

[0017] According to another aspect of the present application, a method for making a stacked battery is provided, including providing a crystalline silicon bottom battery; using the above-mentioned method for making a perovskite battery to form a perovskite top battery on the crystalline silicon bottom battery to obtain a stacked battery. Through the technical solution of the present application, a method for making a perovskite battery is provided, the method including: providing a substrate provided with a transparent conductive layer, forming a hole transport layer on the side of the transparent conductive layer away from the substrate, forming a perovskite particle layer on the side of the hole transport layer away from the substrate, forming a perovskite film on the side of the hole transport layer away from the substrate, the perovskite film covering the perovskite particle layer, by providing the perovskite particle layer on one side of the hole transport layer, the adhesion of the first perovskite precursor solution on the hole transport layer is increased when preparing the perovskite film, and the coverage of the perovskite film on the hole transport layer is improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:

[0019] Figure 1 It is a schematic diagram of a process for preparing a perovskite battery provided in an embodiment of the present application;

[0020] Figure 2 is a partial cross-sectional schematic diagram of a perovskite battery provided according to an embodiment of the present application;

[0021] Figure 3 is a partial cross-sectional schematic diagram of another perovskite battery provided according to an embodiment of the present application;

[0022] Figure 4 is a partial cross-sectional schematic diagram of another perovskite battery provided according to an embodiment of the present application;

[0023] Figure 5 It is a partial cross-sectional schematic diagram of another perovskite battery provided according to an embodiment of the present application.

[0024] The above drawings include the following reference numerals:

[0025] 10. Substrate; 20. Transparent conductive layer; 30. Hole transport layer; 40. Perovskite particle layer; 50. Perovskite film; 60. Electron transport layer; 70. Electrode layer. DETAILED DESCRIPTION

[0026] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.

[0027] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.

[0028] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present application described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0029] In the related art, perovskite solar cells can conveniently prepare perovskite film layers with high consistency and repeatability by spin coating. The typical process of preparing perovskite solar cells with self-assembled monolayers (SAMs) as hole transport layers by spin coating is: 1. Spin coating a solution containing SAMs material on a conductive substrate and annealing and washing; 2. Spin coating a perovskite precursor solution on the surface of the SAMs material and annealing to obtain a perovskite film layer; 3. Spin coating an electron transport layer and an interface barrier layer material on the perovskite film layer; 4. Prepare a metal electrode. Due to the poor wettability of the perovskite precursor solution on the surface of the SAMs material, the coverage of the perovskite film layer prepared by spin coating is low (20-60%). The low coverage significantly reduces the yield rate, which brings difficulties to the practical application of SAMs.

[0030] Therefore, in order to solve the above problems, a method for preparing a perovskite battery is provided in the embodiments of the present application. Figure 1 As shown, the method for preparing the perovskite film includes:

[0031] Step S100: providing a substrate, on which a transparent conductive layer is disposed;

[0032] Step S200: forming a hole transport layer on the side of the transparent conductive layer facing away from the substrate;

[0033] Step S300: forming a perovskite particle layer on a side of the hole transport layer facing away from the substrate;

[0034] Step S400: forming a perovskite film on the side of the hole transport layer facing away from the substrate, wherein the perovskite film covers the perovskite particle layer.

[0035] The preparation method of the above-mentioned perovskite battery forms a perovskite particle layer on the side of the hole transport layer facing away from the substrate, and forms a perovskite film on the side of the hole transport layer facing away from the substrate, and the perovskite film covers the perovskite particle layer. By arranging the perovskite particle layer on one side of the hole transport layer, the adhesion of the first perovskite precursor solution on the hole transport layer is increased when preparing the perovskite film, and the coverage rate of the perovskite film on the hole transport layer is improved.

[0036] The following is a more detailed description of exemplary embodiments of the method for preparing a perovskite cell provided in accordance with the present application. However, these exemplary embodiments may be implemented in a variety of different forms and should not be construed as being limited to the embodiments described herein. It should be understood that these embodiments are provided to make the disclosure of the present application thorough and complete, and to fully convey the concepts of these exemplary embodiments to those of ordinary skill in the art.

[0037] First, if Figure 2 As shown, the above step S100 is performed: providing a substrate 10 , on which a transparent conductive layer 20 is disposed.

[0038] The above-mentioned substrate 10 can be a semiconductor substrate, such as any one of a silicon, gallium arsenide and silicon nitride substrate. The above-mentioned substrate 10 can also be other types of photovoltaic cell structures, such as a crystalline silicon cell. The above-mentioned preparation method of the embodiment of the present application is used to form a stacked photovoltaic cell by forming a perovskite cell on the different types of photovoltaic cell structures.

[0039] Specifically, Figure 2 As shown, the material of the substrate 10 can be selected from fluorine-doped tin oxide (FTO) coated glass and / or indium-doped tin oxide (ITO) coated glass, but is not limited to the above types. Those skilled in the art can also reasonably select the type of substrate 10 of the perovskite battery according to actual needs; the transparent conductive layer 20 has the function of carrying other materials and collecting photoelectrons, and is a transparent electrode with high visible light transmittance and low resistivity. The material of the transparent conductive layer 20 can be any one or more of indium tin oxide, zinc oxide and tin oxide, but is not limited to the above types. Those skilled in the art can also reasonably select the material types of the substrate and the transparent conductive layer according to actual needs.

[0040] After the step of providing the substrate 10, as Figure 2 As shown, the above step S200 is performed: a hole transport layer 30 is formed on the side of the transparent conductive layer 20 facing away from the substrate 10 .

[0041] Specifically, Figure 2As shown, the material of the self-assembled monolayer can be dissolved, and the self-assembled monolayer material can be spin-coated on the side of the transparent conductive layer 20 away from the substrate 10, and the self-assembled monolayer material after spin coating can be annealed and washed so that the self-assembled monolayer material is deposited on the transparent conductive layer 20 to form a hole transport layer 30, wherein the annealing temperature can be 100°C to 200°C, and the time is 30min to 60min. A detergent or other solvent can be used for washing. The specific annealing and washing conditions should be reasonably adjusted according to the characteristics of the material and the actual situation, and this application does not make specific limitations.

[0042] In the above optional embodiments, the material of the self-assembled monolayer may be any one or more of 2PACz, MeO-2PACz and 2PACz, which is not specifically limited in the present application.

[0043] After the step of forming the hole transport layer 30, as Figure 3 As shown, step S300 is performed: a perovskite particle layer 40 is formed on a side of the hole transport layer 30 facing away from the substrate 10 .

[0044] Specifically, Figure 3 As shown, the perovskite particle layer 40 is located on the side of the hole transport layer 30 away from the transparent conductive layer 20. By preparing a certain number and particle size of perovskite particle layer 40 on one side of the hole transport layer 30, the surface of the hole transport layer 30 away from the transparent conductive layer 20 can be made rough, and the surface area is increased accordingly.

[0045] In some optional embodiments, the thickness of the perovskite particle layer is 20 nm to 500 nm.

[0046] In the above optional embodiment, the rough surface of the perovskite particle layer meeting the above thickness range has a larger contact area with the perovskite film, which can meet the adhesion strength between the perovskite film and the hole transport layer.

[0047] In some optional embodiments, the volume density of the perovskite particle layer is 15 ppi to 100 ppi.

[0048] In the above optional embodiment, the use of a perovskite particle layer that meets the above volume density range can allow the perovskite particles to have a suitable spacing, thereby allowing the perovskite particle layer to have a suitable roughness, which can meet the adhesion strength between the perovskite film and the hole transport layer.

[0049] In some optional embodiments, the particle size of the perovskite particles in the perovskite particle layer is 20 nm to 500 nm.

[0050] In the above optional implementation, using a perovskite particle layer that meets the above particle size range can make the perovskite particle layer have a suitable roughness, which can meet the adhesion strength between the perovskite film and the hole transport layer.

[0051] In some optional embodiments, the step of forming the perovskite particle layer 40 on the side of the hole transport layer 30 facing away from the substrate 10 includes:

[0052] Step S311 : spraying a perovskite precursor solution on the side of the hole transport layer 30 facing away from the substrate 10 by a spraying process.

[0053] In the above optional embodiment, the spraying process adopted can be to pre-install the first perovskite precursor solution in the spray equipment, and then spray the first perovskite precursor solution onto the surface of the hole transport layer 30 formed in step S200. The use of the spray equipment can make the first perovskite precursor solution more evenly distributed on the surface of the hole transport layer 30, so that the formed perovskite particle layer has a stronger adhesion ability, thereby making the subsequently formed perovskite film more evenly adhered to one side of the hole transport layer 30.

[0054] Step S312 : annealing the first perovskite precursor solution to allow the first perovskite precursor solution to crystallize and precipitate perovskite particles, thereby forming a perovskite particle layer 40 .

[0055] In the above optional embodiment, the sprayed first perovskite precursor solution is then annealed and crystallized to precipitate perovskite particles, wherein the annealing temperature can be 80°C to 170°C, the spraying speed of the spraying process can be 1ml / min to 10ml / min, and the spraying distance can be 10cm to 30cm. The annealing temperature, spraying speed and spraying distance within the above range can make the formed perovskite particle layer more adherent, and make the subsequently formed perovskite film more compact and more evenly distributed on one side of the hole transport layer 30. Those skilled in the art can reasonably adjust the annealing temperature, spraying speed and spraying distance of the first perovskite precursor solution according to actual conditions, and this application does not make specific limitations.

[0056] In some optional embodiments, the step of forming the perovskite particle layer 40 on the side of the hole transport layer 30 facing away from the substrate 10 further includes:

[0057] Step S321: coating the first perovskite precursor solution on the surface of the hole transport layer 30 by inkjet printing process.

[0058] In the above optional embodiment, the inkjet printing process used can be to pre-install the first perovskite precursor solution in the inkjet printing equipment, and print droplets of the first perovskite precursor solution on the surface of the hole transport layer 30. The use of inkjet printing can make the first perovskite precursor solution more evenly distributed on the surface of the hole transport layer 30, so that the formed perovskite particle layer has a stronger adhesion ability, thereby making the subsequently formed perovskite film more evenly adhered to one side of the hole transport layer 30.

[0059] Step S322: annealing the first perovskite precursor solution to allow the first perovskite precursor droplets to crystallize and precipitate perovskite particles to form a perovskite particle layer.

[0060] In the above optional embodiment, the droplets of the first perovskite precursor solution printed on the surface of the hole transport layer 30 in step S321 are annealed to precipitate perovskite particles to form a perovskite particle layer 40, wherein the annealing temperature can be 80°C to 170°C, and the inkjet printing speed is 1m / s to 10m / s. The perovskite particle layer formed within the above range of annealing temperature and inkjet printing speed has a stronger adhesion ability, thereby making the subsequently formed perovskite film more compact and more evenly distributed on one side of the hole transport layer 30. Those skilled in the art can reasonably adjust the annealing temperature and inkjet printing speed of the first perovskite precursor solution according to actual conditions, and this application does not make specific limitations.

[0061] After the step of forming the perovskite particle layer 40, as Figure 4 As shown, step S400 is performed: a perovskite film 50 is formed on the side of the hole transport layer 30 facing away from the substrate 10 , and the perovskite film 50 covers the perovskite particle layer 40 .

[0062] In the above optional implementation, if Figure 4 As shown, the perovskite film 50 is covered on the perovskite particle layer 40 formed in step S300. Since the perovskite particle layer 40 makes the surface of one side of the hole transport layer 30 rough, the perovskite film 50 can be better attached to the perovskite particle layer 40, thereby increasing the adhesion of the perovskite precursor solution on the hole transport layer when preparing the perovskite film and improving the coverage of the perovskite film on the hole transport layer.

[0063] In the above optional embodiment, a second perovskite precursor solution is added to the surface of the perovskite particle layer 40, and then a spin coating apparatus is quickly started to form a perovskite film 50 with a high surface coverage. The operation time of the spin coating apparatus can be 30s to 50s. During the operation of the spin coating apparatus, an anti-solvent can be added to enhance the film formation quality, wherein the anti-solvent can be any one or more of acetone, methanol and isopropanol, which is not specifically limited in the present application.

[0064] Exemplarily, the second perovskite precursor solution is spin-coated on the surface of the perovskite particle layer 40 on the hole transport layer 30 at a spin-coating rate of 2000 rpm to 7000 rpm. By making the spin-coating rate satisfy the above range, the second perovskite precursor solution can form a uniform and smooth perovskite coating on the surface of the perovskite particle layer 40 while ensuring the coating efficiency, thereby forming a more uniform and smooth perovskite film 50, reducing the defects of the perovskite film 50, and improving the quality of the perovskite film 50.

[0065] In the above optional embodiment, the crystal structure of the perovskite film 50 formed by spin coating crystallization is ABX3 type, wherein A is selected from Cs + 、CH(NH2) 2+ 、CH3NH 3+ and C(NH2) 3+ Any one or more of, B is selected from Pb 2+ and / or Sn 2+ , X is selected from Br - ,I - and Cl - Any one or more of .

[0066] In the above steps, the second perovskite precursor solution can be directly spin-coated once, or the second perovskite precursor solution can be spin-coated in steps. Specifically, the second perovskite precursor solution can be spin-coated twice by first spin-coating at a low speed and then spin-coating at a high speed. Those skilled in the art can also reasonably select the spin-coating method of the second perovskite precursor solution according to the specific type of material in the second perovskite precursor solution.

[0067] In some optional embodiments, the step of preparing a first perovskite precursor solution includes: mixing the perovskite material with a mixed solvent to form a first perovskite precursor solution, wherein the mixed solvent contains an organic solvent, and the organic solvent is any one or more of methyl pyrrolidone, dimethylformamide, acetone, ethyl acetate, methanol and ethanol.

[0068] In the above optional embodiment, the first perovskite precursor solution contains an organic solvent, wherein the organic solvent is any one or more of methyl pyrrolidone, dimethylformamide, acetone, ethyl acetate, methanol and ethanol, and the present application does not make specific limitations. The organic solvent can enhance the wettability of the first perovskite precursor solution on the surface of the hole transport layer 30, thereby making the formed perovskite particle layer 40 more firmly attached to one side of the hole transport layer 30, thereby enhancing the firmness and performance of the perovskite battery.

[0069] The above-mentioned perovskite material can be selected from any one or more of CsI, PbI2, PbBr2, FAI, MABr and MACl, but is not limited to the above-mentioned types. Those skilled in the art can also reasonably select the type of perovskite material according to actual needs.

[0070] In some optional embodiments, the ratio of the organic solvent to the first perovskite precursor solution is 1:(1-3).

[0071] In the above optional embodiment, when the ratio of the organic solvent to the first perovskite precursor solution is within the above range, the wettability of the first perovskite precursor solution on the hole transport layer 30 can be better.

[0072] In some optional embodiments, such as Figure 5 As shown, after the step of forming a perovskite film 50 on the side of the hole transport layer 30 away from the substrate 10, the method for preparing a perovskite battery also includes: sequentially forming an electron transport layer 60 and an electrode layer 70 on the side of the perovskite film 50 away from the substrate 10, so that the electrode layer 70 is located on the side of the electron transport layer 60 away from the perovskite film 50.

[0073] In the above optional implementation, if Figure 5 As shown, after step S400 is performed, an electron transport layer 60 and an electrode layer 70 are sequentially formed on the side of the perovskite film 50 away from the transparent conductive layer 20 to form a complete perovskite cell structure.

[0074] In the above optional implementation, if Figure 5 As shown, the electron transport layer 60 is used to transport electrons and inhibit electron backflow. The separation effect of electrons and holes can be enhanced in the transmission between photogenerated electrons and holes, thereby effectively improving the conversion efficiency of the perovskite battery and extending the life of the battery. It can also prevent neutron recombination, thereby extending the service life of the perovskite battery, and increase the electron transmission rate, thereby reducing the impedance of the current and enhancing the performance of the perovskite battery. The material of the electron transport layer 60 can be any one or more of titanium dioxide, conductive polymers and conductive oxides. Those skilled in the art can reasonably select the material of the electron transport layer according to actual conditions, and this application does not make specific limitations.

[0075] In the above optional implementation, if Figure 5 As shown, the electrode layer 70 is used to transfer charges and connect to an external circuit, and collects photogenerated carriers through the electron transport layer 60 and the hole transport layer 30, so that the charges can be smoothly led out of the battery and connected to an external circuit. The material of the electrode layer 70 can be any one or more of gold, silver and aluminum, and the preparation process can be evaporation or sputtering. The material and preparation process of the electrode layer 70 are not specifically limited in this application.

[0076] According to another embodiment of the present application, a perovskite battery is provided, which is prepared by the preparation method of the perovskite battery in the above embodiment.

[0077] The perovskite cell obtained by the preparation method of the perovskite cell of the present application forms a perovskite particle layer 40 on the side of the hole transport layer 30 away from the substrate 10, and forms a perovskite film 50 on the side of the hole transport layer 30 away from the substrate 10, and the perovskite film 50 covers the perovskite particle layer 40. By arranging the perovskite particle layer 40 on one side of the hole transport layer 30, the adhesion of the first perovskite precursor solution on the hole transport layer 30 is increased when preparing the perovskite film 50, and the coverage rate of the perovskite film 50 on the hole transport layer 30 is improved.

[0078] According to another embodiment of the present application, a method for manufacturing a stacked battery is also provided, the stacked battery includes providing a crystalline silicon bottom battery; using the above-mentioned method for manufacturing a perovskite battery, a perovskite top battery is formed on the crystalline silicon bottom battery to obtain a stacked battery. In the above-mentioned optional implementation, the crystalline silicon bottom battery can be a single crystal silicon battery, a polycrystalline silicon battery and a thin film silicon battery. Those skilled in the art can reasonably select the type of silicon crystal bottom battery according to actual conditions, and this application does not make specific limitations. The main material of the single crystal silicon battery is high-purity single crystal silicon, which has high conversion efficiency and stability. The polycrystalline silicon battery uses polycrystalline silicon material. The thin film silicon battery uses thin film technology to make polycrystalline silicon material into thin sheets, which can achieve a lighter and more flexible design with relatively low cost.

[0079] The stacked battery obtained by the manufacturing method of the stacked battery of the present application forms a perovskite particle layer on the side of the hole transport layer of the perovskite top battery facing away from the substrate, and forms a perovskite film on the side of the hole transport layer facing away from the substrate, and the perovskite film covers the perovskite particle layer. By arranging the perovskite particle layer on one side of the hole transport layer, the adhesion of the first perovskite precursor solution on the hole transport layer is increased when preparing the perovskite film, and the coverage rate of the perovskite film on the hole transport layer is improved.

[0080] The preparation method of the above-mentioned perovskite battery and the perovskite battery of the present application will be specifically described below in combination with specific embodiments and comparative examples.

[0081] Example 1

[0082] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0083] 1. Providing a substrate, on which a transparent conductive layer is disposed;

[0084] 2. forming a 2PACz hole transport layer on the side of the transparent conductive layer facing away from the substrate;

[0085] 3. Forming a perovskite particle layer on the side of the 2PACz hole transport layer facing away from the substrate;

[0086] 4. A perovskite film is formed on the side of the 2PACz hole transport layer facing away from the substrate, and the perovskite film covers the perovskite particle layer;

[0087] 5. An electron transport layer and an electrode layer are sequentially formed on the side of the perovskite film facing away from the substrate, so that the electrode layer is located on the side of the electron transport layer facing away from the perovskite film.

[0088] Example 2

[0089] 1. Providing a substrate, on which a transparent conductive layer is disposed;

[0090] 2. Forming a Me-4PACz hole transport layer on the side of the transparent conductive layer away from the substrate;

[0091] 3. Forming a perovskite particle layer on the side of the Me-4PACz hole transport layer facing away from the substrate;

[0092] 4. A perovskite film is formed on the side of the Me-4PACz hole transport layer facing away from the substrate, and the perovskite film covers the perovskite particle layer;

[0093] 5. An electron transport layer and an electrode layer are sequentially formed on the side of the perovskite film facing away from the substrate, so that the electrode layer is located on the side of the electron transport layer facing away from the perovskite film.

[0094] Comparative Example 1

[0095] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0096] 1. Providing a substrate, on which a transparent conductive layer is disposed;

[0097] 2. forming a 2PACz hole transport layer on the side of the transparent conductive layer facing away from the substrate;

[0098] 3. Forming a perovskite film on the side of the 2PACz hole transport layer facing away from the substrate;

[0099] 4. An electron transport layer and an electrode layer are sequentially formed on the side of the perovskite film facing away from the substrate, so that the electrode layer is located on the side of the electron transport layer facing away from the perovskite film.

[0100] Comparative Example 2

[0101] This embodiment provides a method for preparing a perovskite battery, comprising the following steps:

[0102] 5. Providing a substrate, on which a transparent conductive layer is disposed;

[0103] 6. Forming a Me-4PACz hole transport layer on the side of the transparent conductive layer away from the substrate;

[0104] 7. Forming a perovskite film on the side of the Me-4PACz hole transport layer facing away from the substrate;

[0105] 8. An electron transport layer and an electrode layer are sequentially formed on the side of the perovskite film facing away from the substrate, so that the electrode layer is located on the side of the electron transport layer facing away from the perovskite film.

[0106] The performance of the perovskite battery prepared by the preparation method of the perovskite battery in the above-mentioned Example 1 and Comparative Example 1 was tested, and the test results are as follows:

[0107] Table 1

[0108]

[0109]

[0110]

[0111] From the experimental data of fill factor and conversion efficiency in the above table, it can be seen that the conversion efficiency of the batteries in Example 1 and Example 2 is high and the battery performance is excellent. From the overall data in the above table, it can be seen that the consistency of various aspects of the batteries in Example 1 and Example 2 is relatively outstanding. The batteries in Comparative Example 1 and Comparative Example 2 have poor performance due to serious or slight short circuits caused by low coverage of the perovskite film of the batteries.

[0112] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:

[0113] By adopting the above-mentioned perovskite battery preparation method of the embodiment of the present application, a perovskite particle layer is arranged on one side of the hole transport layer, thereby increasing the adhesion of the first perovskite precursor solution on the hole transport layer when preparing the perovskite film, and improving the coverage of the perovskite film on the hole transport layer.

[0114] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.

[0115] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.

Claims

1. A method for preparing a perovskite battery, characterized in that: The following steps are involved: Providing a substrate, on which a transparent conductive layer is disposed; forming a hole transport layer on the side of the transparent conductive layer facing away from the substrate; forming a perovskite particle layer on a side of the hole transport layer facing away from the substrate; A perovskite film is formed on a side of the hole transport layer facing away from the substrate, and the perovskite film covers the perovskite particle layer.

2. The method for preparing a perovskite battery according to claim 1, characterized in that: The thickness of the perovskite particle layer is 20nm to 500nm.

3. The method for preparing a perovskite battery according to claim 1, characterized in that: The volume density of the perovskite particle layer is 15 ppi to 100 ppi.

4. The method for preparing a perovskite battery according to claim 1, characterized in that: The particle size of the perovskite particles in the perovskite particle layer is 20 nm to 500 nm.

5. The method for preparing a perovskite battery according to claim 1, characterized in that: The step of forming a perovskite particle layer on a side of the hole transport layer facing away from the substrate comprises: Spraying a first perovskite precursor solution on a side of the hole transport layer away from the substrate by a spraying process; The first perovskite precursor solution is annealed to allow the first perovskite precursor solution to crystallize and precipitate perovskite particles, thereby forming the perovskite particle layer.

6. The method for preparing a perovskite battery according to claim 1, characterized in that: The step of forming a perovskite particle layer on a side of the hole transport layer away from the substrate further comprises: coating a first perovskite precursor solution on the surface of the hole transport layer by an inkjet printing process; The first perovskite precursor solution is annealed to allow the first perovskite precursor droplets to crystallize and precipitate perovskite particles, thereby forming the perovskite particle layer.

7. The method for preparing a perovskite battery according to claim 5 or 6, characterized in that: The annealing temperature of the first perovskite precursor solution is 80°C to 170°C.

8. The method for preparing a perovskite battery according to claim 5, characterized in that: The spraying speed of the spraying process is 1 ml / min to 10 ml / min, and the spraying distance is 10 cm to 30 cm.

9. The method for preparing a perovskite battery according to claim 6, characterized in that: The inkjet printing process has an inkjet printing speed of 1 cm / s to 10 cm / s.

10. The method for preparing a perovskite battery according to claim 5 or 6, characterized in that: The step of preparing the first perovskite precursor solution comprises: The perovskite material is mixed with a mixed solvent to form the first perovskite precursor solution, wherein the mixed solvent contains an organic solvent, and the organic solvent is any one or more of methyl pyrrolidone, dimethylformamide, acetone, ethyl acetate, methanol and ethanol.

11. The method for preparing a perovskite battery according to claim 10, characterized in that: The ratio of the organic solvent to the first perovskite precursor solution is 1:(1-3).

12. The method for preparing a perovskite battery according to claim 1, characterized in that: After the step of forming a perovskite film on the side of the hole transport layer facing away from the substrate, the method for preparing the perovskite cell further comprises: An electron transport layer and an electrode layer are sequentially formed on a side of the perovskite film away from the substrate, so that the electrode layer is located on a side of the electron transport layer away from the perovskite film.

13. A perovskite battery, characterized in that: The perovskite battery is prepared by the preparation method of any one of claims 1 to 12.

14. A method for manufacturing a laminated battery, characterized in that: include: Provide crystalline silicon bottom cells; The method for manufacturing a perovskite cell according to any one of claims 1 to 12 is adopted to form a perovskite top cell on the crystalline silicon bottom cell to obtain the stacked cell.

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