Preparation method of suede structure layer and solar cell
By forming a suede structure layer with a pyramid-like structure on the substrate of the solar cell, the problems of uneven growth and leakage of perovskite layer caused by irregular pyramid suede are solved, and the light absorption efficiency and light trapping effect of the solar cell are improved.
Patent Information
- Application Number
- CN202411272811.7
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-11
- Publication Date
- 2025-03-28
AI Technical Summary
The irregular pyramid suede of existing solar cells makes it difficult for perovskite layers to grow evenly, increasing the risk of leakage and thus reducing the light trapping effect.
By forming a transparent conductive layer and a hole transport layer on the substrate, a preparative suede structure layer is formed on the opposite side, and a pyramid-like suede structure layer is formed by etching treatment. The spiral of the pyramid-like structure has a recessed structure facing the substrate.
This method effectively provides growth sites for perovskite precursors, ensures that the pyramid spirals can also grow a perovskite layer of sufficient thickness, improves the light absorption efficiency and light trapping effect of solar cells, and reduces the risk of charge recombination and leakage.
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Figure CN119730670A_ABST
Abstract
Description
Technical Field
[0001] The present application relates to the technical field of solar cells, and in particular to a method for preparing a suede structure layer and a solar cell. Background Art
[0002] At present, the mainstream crystalline silicon-perovskite stacked cells use a front-side velvet light-trapping structure to improve the overall optical utilization of the cell, but this also brings a series of problems. For example, the irregular pyramid velvet makes it difficult for the perovskite layer to grow uniformly and conformally on the pyramid. In particular, the exposure of the pyramid tip will greatly increase the possibility of battery leakage. The current common practice is to round the pyramids through acid treatment and increase the adhesion of the perovskite precursor on the pyramid to achieve conformal growth of the perovskite on the pyramid surface. However, rounding will greatly increase the reflectivity of the bottom cell (Δref is greater than 2), reduce the light-trapping effect, and it is difficult to strike a balance between reflectivity and conformal growth. Summary of the invention
[0003] The present application provides a method for preparing a suede structure layer and a solar cell, so as to solve the problem in the related art that the solar cell has a high risk of leakage and thus has a poor light trapping effect.
[0004] According to one aspect of the present application, a method for preparing a velvet structure layer is provided, comprising: providing a substrate; forming a transparent conductive layer and a hole transport layer on the substrate in sequence; forming a preliminary velvet structure layer on the surface of the hole transport layer on a side away from the substrate, the preliminary velvet structure layer having a plurality of pyramid structures; etching the preliminary velvet structure layer to obtain a velvet structure layer, the velvet structure layer having a plurality of pyramid-like structures, the pyramid-like structures having a concave structure on a side away from the substrate, the concave structure facing the substrate.
[0005] Optionally, the step of etching the preliminary velvet structure layer includes: forming a preliminary oxide layer on the side of the preliminary velvet structure layer facing away from the substrate, the preliminary oxide layer covering the pyramid structure; etching the preliminary oxide layer so that the top of the pyramid structure is corroded to form the concave structure, thereby obtaining the velvet structure layer.
[0006] Optionally, the step of forming the recessed structure includes: etching the preliminary oxide layer with an acidic etchant to remove the preliminary oxide layer at the top of the pyramid; and etching the top of the pyramid with an alkaline etchant to form the recessed structure.
[0007] Optionally, after the step of forming the recessed structure, the preparation method further comprises: etching the remaining preliminary oxide layer with an acidic etchant to remove the preliminary oxide layer.
[0008] Optionally, a cross-sectional shape of the recessed structure along the thickness direction of the substrate includes at least one of the following: an arc shape and a polygon shape.
[0009] Optionally, the depth of the recessed structure is 10 nm to 500 nm.
[0010] Optionally, the process of forming the preliminary oxide layer includes chemical vapor deposition.
[0011] Optionally, the thickness of the preliminary oxide layer is 10 nm to 50 nm.
[0012] Optionally, the material of the preliminary oxide layer includes at least one of the following: PSG, BSP, and BPSG.
[0013] According to another aspect of the present application, a solar cell is provided, which is prepared according to the preparation method of the velvet structure layer, and the solar cell includes a stacked substrate, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer, wherein the velvet structure layer has a plurality of pyramid-like structures, and the pyramid-like structures have a recessed structure on a side away from the substrate, and the recessed structure faces the substrate.
[0014] Through the technical solution of the present application, a method for preparing a velvet structure layer is provided, including providing a substrate; forming a preliminary velvet structure layer on the surface of at least one side of the substrate, the preliminary velvet structure layer having a plurality of pyramid structures; etching the preliminary velvet structure layer to obtain a velvet structure layer, the velvet structure layer having a plurality of pyramid-like structures, the pyramid-like structure having a concave structure on the side away from the substrate, and the concave structure facing the substrate. By forming a pyramid-like structure in the velvet structure layer, the top of the pyramid-like structure is a concave structure, and a velvet surface of a micro-etched pyramid structure is formed, which can effectively provide a growth site for the perovskite precursor, so that even at the top of the pyramid, a perovskite layer of sufficient thickness can be grown, thereby improving the light absorption efficiency of the solar cell, improving the light trapping effect, and reducing the risk of charge recombination and leakage. The problem of poor light trapping effect due to the high risk of leakage of solar cells in the related art is solved. BRIEF DESCRIPTION OF THE DRAWINGS
[0015] The drawings constituting a part of the present application are used to provide a further understanding of the present application. The illustrative embodiments and descriptions of the present application are used to explain the present application and do not constitute an improper limitation on the present application. In the drawings:
[0016] Figure 1 It is a schematic flow chart of a method for preparing a suede structure layer according to an embodiment of the present application;
[0017] Figure 2 It is a schematic diagram of the cross-sectional structure of a base body after providing a substrate in the method for preparing a suede structure layer provided in an embodiment of the present application;
[0018] Figure 3 is Figure 2 A schematic diagram of a cross-sectional structure of a substrate after a transparent conductive layer, an electron transport layer and a preliminary suede structure layer are sequentially formed on the provided substrate;
[0019] Figure 4 is Figure 3 A schematic diagram of the cross-sectional structure of the substrate after a preliminary oxide layer is formed on the preliminary velvet structure layer formed in the process;
[0020] Figure 5 Yes Figure 4 A schematic diagram of the cross-sectional structure of the prepared velvet structure tower tip exposing the base body after etching the prepared oxide layer formed in the process;
[0021] Figure 6 Yes Figure 5 Schematic diagram of the cross-sectional structure of the exposed substrate after progressive etching treatment;
[0022] Figure 7 Yes Figure 6 Schematic diagram of the cross-sectional structure of the substrate after the remaining preliminary oxide layer is removed;
[0023] Figure 8 It is a schematic diagram of the cross-sectional structure of a solar cell provided in an embodiment of the present application.
[0024] The above drawings include the following reference numerals:
[0025] 10. substrate; 20. transparent conductive layer; 30. hole transport layer; 40. suede structure layer; 401. preliminary suede structure layer; 50. recessed structure; 60. preliminary oxide layer; 70. perovskite film; 80. electron transport layer; 90. electrode layer. DETAILED DESCRIPTION
[0026] It should be noted that, in the absence of conflict, the embodiments and features in the embodiments of the present application can be combined with each other. The present application will be described in detail below with reference to the accompanying drawings and in combination with the embodiments.
[0027] In order to enable those skilled in the art to better understand the solution of the present application, the technical solution in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present application.
[0028] It should be noted that the terms "first", "second", etc. in the specification and claims of the present application and the above-mentioned drawings are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchanged where appropriate, so as to describe the embodiments of the present application described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions, for example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.
[0029] The irregular pyramid surface of solar cells in the prior art makes it difficult for the perovskite layer to grow uniformly and conformally on the pyramid. In particular, the exposure of the pyramid tip greatly increases the possibility of battery leakage. The current common practice is to round the pyramids through acid treatment to increase the adhesion of the perovskite precursor on the pyramid to achieve conformal growth of the perovskite on the pyramid surface. However, rounding will greatly increase the reflectivity of the bottom cell (Δref is greater than 2) and reduce the light trapping effect, making it difficult to strike a balance between reflectivity and conformal growth.
[0030] Therefore, research on the above issues is carried out. Figure 1 As shown, a method for preparing a suede structure layer is provided in an embodiment of the present application, comprising:
[0031] Step S11: providing a substrate;
[0032] Step S12: forming a transparent conductive layer and a hole transport layer in sequence on the substrate;
[0033] Step S13: forming a preliminary suede structure layer on the surface of the hole transport layer facing away from the substrate, wherein the preliminary suede structure layer has a plurality of pyramid structures;
[0034] Step S14: etching the prepared suede structure layer to obtain a suede structure layer, wherein the suede structure layer has a plurality of pyramid-like structures, wherein the pyramid-like structures have a concave structure on a side away from the substrate, and the concave structure faces the substrate.
[0035] Through the preparation method of the velvet structure layer, a pyramid-like structure is formed in the velvet structure layer, the top of the pyramid-like structure is a concave structure, and a velvet surface of a micro-etched pyramid structure is formed, which can effectively provide a growth site for the perovskite precursor, so that even at the top of the pyramid, a perovskite layer of sufficient thickness can be grown, thereby improving the light absorption efficiency of the solar cell, improving the light trapping effect, and reducing the risk of charge recombination and leakage. The problem of poor light trapping effect due to the high leakage risk of solar cells in the related art is solved.
[0036] First, if Figure 2 As shown, step S11 is performed: providing a substrate 10 .
[0037] Specifically, the substrate 10 may be any one or more of silicon, monocrystalline silicon and polycrystalline silicon, and may also be a bottom cell for preparing a stacked solar cell, which is not specifically limited in the present application.
[0038] After the step of providing a substrate is completed, Figure 3 As shown, step S12 is performed: a transparent conductive layer 20 and a hole transport layer 30 are sequentially formed on the substrate 10 .
[0039] Specifically, the material of the transparent conductive layer 20 can be indium tin oxide (ITO) or indium zinc oxide (IZO), which has transparent and conductive properties, can effectively transport charges and maintain transparency; the material of the hole transport layer 30 can be poly (3, 4-ethylenedioxythiophene) and organic semiconductor materials similar to this material. The main function of the hole transport layer 30 is to help the charge to be transported in the device, increase the mobility of the carrier and reduce the recombination rate of the carrier, thereby improving the performance and efficiency of the device. The hole transport layer 30 can also effectively prevent the recombination and leakage of the charge, and improve the stability and reliability of the device. The material selection of the transparent conductive layer 20 and the hole transport layer 30 is not specifically limited in this application.
[0040] After the steps of sequentially forming a transparent conductive layer and a hole transport layer on the substrate, Figure 3 As shown, step S13 is performed: a preliminary textured structure layer 401 is formed on the surface of the hole transport layer 30 which is away from the substrate 10 , and the preliminary textured structure layer 401 has a plurality of pyramid structures.
[0041] Specifically, the above-mentioned prepared velvet structure layer 401 can be single-sided velvet or double-sided velvet. The velvet method can be any one of acid velvet, alkali velvet, electrochemical velvet, reactive ion etching velvet, laser velvet and mask velvet, and a tiny velvet structure is formed on the surface of the silicon wafer through different chemical or physical processes, thereby improving the conversion efficiency of light energy. The velvet process includes: acid velvet: using an acidic solution to treat the silicon wafer, forming a tiny concave-convex structure on the surface of the silicon wafer through a chemical reaction to increase the surface area; alkali velvet: using an alkaline solution to treat the silicon wafer, forming a velvet structure on the surface of the silicon wafer through a chemical reaction; electrochemical velvet: forming a specific structure on the surface of the silicon wafer through an electrochemical reaction; reactive ion etching velvet: using reactive ion etching technology to form a tiny concave-convex structure on the surface of the silicon wafer; laser velvet: using laser technology to form a specific velvet structure on the surface of the silicon wafer; mask velvet: using mask technology to protect part of the silicon wafer from being processed, thereby forming a velvet structure in a specific area.
[0042] After the step of forming a preliminary textured structure layer on the surface of the hole transport layer facing away from the substrate, Figures 4 to 6 As shown, step S14 is performed: etching the prepared velvet structure layer 401 to obtain a velvet structure layer 40 , wherein the velvet structure layer 40 has a plurality of pyramid-like structures, and the pyramid-like structures have a concave structure 50 on the side away from the substrate 10 , and the concave structure 50 faces the substrate 10 .
[0043] Specifically, due to the irregular pyramid velvet surface, it is difficult for the perovskite layer to grow uniformly and conformally on the pyramid, especially the exposure of the pyramid tip will greatly increase the possibility of battery leakage. The tip of the prepared velvet structure layer 401 is etched to form the velvet structure layer 40 with a pyramid-like structure. The tip of the pyramid-like structure has a concave structure 50, which can effectively provide a growth site for the perovskite precursor. Therefore, even at the tip of the pyramid, a perovskite layer of sufficient thickness can be grown, thereby improving the light absorption efficiency of the solar cell, improving the light trapping effect, and reducing the risk of charge recombination and leakage. The problem of poor light trapping effect due to the high risk of leakage of solar cells in the related art is solved.
[0044] In some optional embodiments, such as Figure 4 and Figure 6 As shown, the step of etching the above-mentioned velvet structure layer 401 includes: forming a preliminary oxide layer 60 on the side of the above-mentioned velvet structure layer 401 away from the above-mentioned substrate 10, and the above-mentioned preliminary oxide layer 60 covers the above-mentioned pyramid structure; etching the above-mentioned preliminary oxide layer 60 so that the top of the above-mentioned pyramid structure is corroded to form the above-mentioned concave structure 50, thereby obtaining the above-mentioned velvet structure layer 40.
[0045] In the above optional implementation, if Figure 4 As shown, a preliminary oxide layer 60 is formed on the preliminary textured structure layer 401, as shown in FIG. Figure 5 and Figure 6 As shown, the preliminary oxide layer 60 is etched to expose the top of the pyramid structure, and then the top of the pyramid is etched to obtain the recessed structure 50. Figures 4 to 6 The transparent conductive layer 20 and the hole transport layer 30 in Figure 3 The description is consistent with .
[0046] In some optional embodiments, the step of forming the above-mentioned recessed structure includes: etching the above-mentioned preliminary oxide layer with an acidic etchant to remove the above-mentioned preliminary oxide layer at the top of the pyramid; etching the above-mentioned top with an alkaline etchant to form the above-mentioned recessed structure.
[0047] In the above optional implementation, the above-mentioned preliminary velvet structure layer can be etched with an acidic etchant first. The thickness of the above-mentioned preliminary oxide layer is thinnest at the pyramid tip, so it will be etched away first. When alkaline etching is performed, the pyramid tip is corroded to form a concave structure.
[0048] In some optional embodiments, such as Figure 7 As shown, after the step of forming the recessed structure 50, the preparation method further comprises: etching the remaining preliminary oxide layer with an acidic etchant to remove the preliminary oxide layer.
[0049] In the above optional implementation, if Figure 7 As shown, after the recessed structure 50 is formed, the preliminary textured structure layer forms the textured structure layer 40, and an acidic etchant is used to etch the preliminary oxide layer on the textured structure layer 40 to remove the preliminary oxide layer. Figure 7 The substrate 10, the transparent conductive layer 20 and the hole transport layer 30 are Figure 3 Description consistent.
[0050] In some optional embodiments, the cross-sectional shape of the above-mentioned recessed structure along the thickness direction of the above-mentioned substrate includes at least one of the following: an arc shape and a polygon shape.
[0051] In the above optional implementation, pyramid tips with different etching morphologies can be obtained according to the adjustment of the pickling-alkali treatment-pickling process and the metal auxiliary etchant. The present application does not specifically limit the shape of the above recessed structure.
[0052] In some optional embodiments, the depth of the above-mentioned recessed structure is 10 nm to 500 nm.
[0053] In the above optional embodiment, the distance of the above recessed structure in the thickness direction of the above substrate is within the above range, which can effectively provide a growth site for the perovskite precursor solution, so that even at the top of the pyramid, a perovskite layer of sufficient thickness can be grown, thereby improving the shape retention of the perovskite layer. The perovskite layer can be prepared by a dry method, a wet method, or a combination of a dry and a wet method.
[0054] In some optional embodiments, the process of forming the preliminary oxide layer comprises chemical vapor deposition.
[0055] In the above optional implementation manner, the above-mentioned preliminary oxide layer may be prepared by the above-mentioned chemical vapor deposition method (LPCVD), and the present application does not specifically limit the preparation process of the preliminary oxide layer.
[0056] In some optional embodiments, the thickness of the preliminary oxide layer is 10 nm to 50 nm.
[0057] In the above optional embodiment, when the thickness of the above-mentioned preliminary oxide layer is in the above range, it can be ensured that when the above-mentioned preliminary oxide layer at the top of the tower is etched away, other areas of the above-mentioned velvet structure layer can still be covered by the above-mentioned preliminary oxide layer, thereby protecting other areas of the above-mentioned velvet structure layer from being corroded by the alkaline etching solution.
[0058] In some optional embodiments, the material of the preliminary oxide layer includes at least one of the following: PSG, BSP, BPSG.
[0059] In the above optional implementation manner, the present application does not specifically limit the material of the above-mentioned preliminary oxide layer.
[0060] The present application also proposes a solar cell, such as Figure 8 As shown, the solar cell is prepared according to the preparation method of the velvet structure layer, and the solar cell includes a stacked substrate 10, a transparent conductive layer 20, a hole transport layer 30, a velvet structure layer 40, a perovskite film 70, an electron transport layer 80 and an electrode layer 90, wherein the velvet structure layer 40 has a plurality of pyramid-like structures, and the pyramid-like structure has a recessed structure 50 on the side away from the substrate 10, and the recessed structure 50 faces the substrate 10.
[0061] The solar cell prepared by the preparation method of the velvet structure layer is formed by forming a pyramid-like structure in the velvet structure layer, the top of the pyramid-like structure is a concave structure, and the velvet of the micro-etched pyramid structure is formed, which can effectively provide a growth site for the perovskite precursor, so that even at the top of the pyramid, a perovskite layer of sufficient thickness can be grown, thereby improving the light absorption efficiency of the solar cell, improving the light trapping effect, and reducing the risk of charge recombination and leakage. The problem of poor light trapping effect due to the high leakage risk of solar cells in the related art is solved.
[0062] Example 1
[0063] The stacked solar cell proposed in this application includes:
[0064] A bottom battery, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer are stacked, wherein the bottom battery is a nickel-cadmium battery, the material of the transparent conductive layer is indium tin oxide with a thickness of 10nm, the material of the hole transport layer is poly (3,4-ethylenedioxythiophene) with a thickness of 10nm, the velvet structure layer has a plurality of pyramid-like structures, the pyramid-like structures have a concave structure on the side away from the substrate, the concave structure faces the substrate, the material of the velvet structure layer is lithium titanate, the depth of the concave structure is 10nm, the perovskite film is prepared from a perovskite precursor solution, the perovskite precursor solution is prepared by a dry method, the material of the electron transport layer is indium tin oxide with a thickness of 10nm, and the material of the electrode layer is silver with a thickness of 10nm.
[0065] Example 2
[0066] The stacked solar cell proposed in this application includes:
[0067] A bottom battery, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer are stacked, wherein the bottom battery is a nickel-cadmium battery, the material of the transparent conductive layer is indium tin oxide with a thickness of 10nm, the material of the hole transport layer is poly (3,4-ethylenedioxythiophene) with a thickness of 10nm, the velvet structure layer has a plurality of pyramid-like structures, the pyramid-like structures have a concave structure on the side away from the substrate, the concave structure faces the substrate, the material of the velvet structure layer is lithium titanate, the depth of the concave structure is 250nm, the perovskite film is prepared from a perovskite precursor solution, the perovskite precursor solution is prepared by a dry method, the material of the electron transport layer is indium tin oxide with a thickness of 10nm, and the material of the electrode layer is silver with a thickness of 10nm.
[0068] Example 3
[0069] The stacked solar cell proposed in this application includes:
[0070] A bottom battery, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer are stacked, wherein the bottom battery is a nickel-cadmium battery, the material of the transparent conductive layer is indium tin oxide with a thickness of 10nm, the material of the hole transport layer is poly (3,4-ethylenedioxythiophene) with a thickness of 10nm, the velvet structure layer has a plurality of pyramid-like structures, the pyramid-like structures have a concave structure on the side away from the substrate, the concave structure faces the substrate, the material of the velvet structure layer is lithium titanate, the depth of the concave structure is 500nm, the perovskite film is prepared from a perovskite precursor solution, the perovskite precursor solution is prepared by a dry method, the material of the electron transport layer is indium tin oxide with a thickness of 10nm, and the material of the electrode layer is silver with a thickness of 10nm.
[0071] Example 4
[0072] The stacked solar cell proposed in this application includes:
[0073] The bottom battery, transparent conductive layer, hole transport layer, velvet structure layer, perovskite film, electron transport layer and electrode layer are stacked, wherein the bottom battery is a nickel-cadmium battery, the material of the transparent conductive layer is indium tin oxide with a thickness of 10nm, the material of the hole transport layer is poly (3,4-ethylenedioxythiophene) with a thickness of 10nm, the velvet structure layer has a plurality of pyramid-like structures, the pyramid-like structures have a concave structure on the side away from the substrate, the concave structure faces the substrate, the material of the velvet structure layer is lithium titanate, the depth of the concave structure is 5nm, the perovskite film is prepared from a perovskite precursor solution, the perovskite precursor solution is prepared by a dry method, the material of the electron transport layer is indium tin oxide with a thickness of 10nm, and the material of the electrode layer is silver with a thickness of 10nm.
[0074] Example 5
[0075] The stacked solar cell proposed in this application includes:
[0076] A bottom battery, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer are stacked, wherein the bottom battery is a nickel-cadmium battery, the material of the transparent conductive layer is indium tin oxide with a thickness of 10nm, the material of the hole transport layer is poly (3,4-ethylenedioxythiophene) with a thickness of 10nm, the velvet structure layer has a plurality of pyramid-like structures, the pyramid-like structures have a concave structure on the side away from the substrate, the concave structure faces the substrate, the material of the velvet structure layer is lithium titanate, the depth of the concave structure is 600nm, the perovskite film is prepared from a perovskite precursor solution, the perovskite precursor solution is prepared by a dry method, the material of the electron transport layer is indium tin oxide with a thickness of 10nm, and the material of the electrode layer is silver with a thickness of 10nm.
[0077] The stacked solar cells in the above embodiments 1-5 were tested, and the test results are shown in Table 1:
[0078] Table 1
[0079] Isc(mA / cm2) FF(%) Example 1 19.89 79.1 Example 2 20.02 81.2 Example 3 20.10 82.0 Example 4 19.91 78.9 Example 5 20.08 81.9
[0080] From the data in the above table, it can be seen that the increase in groove depth slightly improves the short-circuit current of the stacked battery, which shows that the groove structure can improve the light absorption efficiency of the solar cell. In addition, the improvement in the filling factor FF shows that the groove structure improves the conformal deposition of the perovskite film on the pyramid and reduces the FF drop caused by leakage.
[0081] From the above description, it can be seen that the above embodiments of the present application achieve the following technical effects:
[0082] The velvet structure layer in the solar cell prepared by the preparation method of the velvet structure layer of the embodiment of the present application has a pyramid-like structure, and the top of the pyramid-like structure is a concave structure, forming a velvet surface of a micro-etched pyramid structure, which can effectively provide a growth site for the perovskite precursor, so that even at the top of the pyramid, it is possible to ensure that a perovskite layer of sufficient thickness grows, thereby improving the light absorption efficiency of the solar cell, improving the light trapping effect, and reducing the risk of charge recombination and leakage. The problem of poor light trapping effect due to the high risk of leakage in the solar cell in the related art is solved.
[0083] It should also be noted that the terms "include", "comprises" or any other variations thereof are intended to cover non-exclusive inclusion, so that a process, method, commodity or device including a series of elements includes not only those elements, but also other elements not explicitly listed, or also includes elements inherent to such process, method, commodity or device. In the absence of more restrictions, the elements defined by the sentence "comprises a ..." do not exclude the existence of other identical elements in the process, method, commodity or device including the elements.
[0084] The above are only embodiments of the present application and are not intended to limit the present application. For those skilled in the art, the present application may have various changes and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application should be included within the scope of the claims of the present application.
Claims
1. A method for preparing a suede structure layer, characterized in that: include; providing a substrate; forming a transparent conductive layer and a hole transport layer on the substrate in sequence; forming a preliminary suede structure layer on a surface of the hole transport layer facing away from the substrate, wherein the preliminary suede structure layer has a plurality of pyramid structures; The prepared velvet structure layer is etched to obtain a velvet structure layer, wherein the velvet structure layer has a plurality of pyramid-like structures, wherein the pyramid-like structures have a concave structure on a side away from the substrate, and the concave structure faces the substrate.
2. The preparation method according to claim 1, characterized in that: The step of etching the prepared textured structure layer comprises: forming a preliminary oxide layer on a side of the preliminary suede structure layer facing away from the substrate, wherein the preliminary oxide layer covers the pyramid structure; The preliminary oxide layer is etched so that the top of the pyramid structure is corroded to form the concave structure, thereby obtaining the velvet structure layer.
3. The preparation method according to claim 2, characterized in that: The steps of forming the recessed structure include: Etching the prepared oxide layer with an acidic etchant to remove the prepared oxide layer at the top of the pyramid; The tower tip is etched with an alkaline etchant to form the recessed structure.
4. The preparation method according to claim 3, characterized in that: After the step of forming the recessed structure, the preparation method further comprises: The remaining preliminary oxide layer is etched with an acidic etchant to remove the preliminary oxide layer.
5. The preparation method according to claim 1, characterized in that: The cross-sectional shape of the recessed structure along the thickness direction of the substrate includes at least one of the following: an arc shape and a polygonal shape.
6. The preparation method according to claim 1, characterized in that: The depth of the concave structure is within a range of 10 nm to 500 nm.
7. The preparation method according to claim 2, characterized in that: The process of forming the preliminary oxide layer includes a chemical vapor deposition method.
8. The preparation method according to claim 2, characterized in that: The thickness of the preliminary oxide layer is in the range of 10 nm to 50 nm.
9. The preparation method according to claim 2, characterized in that: The material of the preliminary oxide layer includes at least one of the following: PSG, BSP, and BPSG.
10. A solar cell, characterized in that: The solar cell is prepared by the method for preparing a velvet structure layer according to any one of claims 1 to 8, and the solar cell comprises a stacked substrate, a transparent conductive layer, a hole transport layer, a velvet structure layer, a perovskite film, an electron transport layer and an electrode layer, wherein The suede structure layer has a plurality of pyramid-like structures, and the pyramid-like structures have concave structures on a side away from the substrate, and the concave structures face the substrate.
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