Preparation method of a wide-bandgap perovskite solar cell

Abstract

The present application belongs to the technical field of laminated photovoltaic cell, and specifically provides a preparation method of a wide-bandgap perovskite solar cell, to solve the problem that in the prior art, the wide-bandgap perovskite light-absorbing layer has too many defects, phase separation and poor crystalline quality, which hinders the carrier transport, and further leads to the problem of low open-circuit voltage and low efficiency of the perovskite solar cell. 2+ In the preparation process of the perovskite light-absorbing layer, methylamine hydrochloride (MACL) and phenethylammonium acetate (PEAAc) are introduced as precursor additives, MACL can significantly inhibit the degradation of the perovskite precursor solution, and is conducive to the preparation of high-quality perovskite thin film with oriented growth and excellent crystalline quality; NH2 of PEAAc can provide Pb 2+ electrons, passivate halogen vacancies; and the synergistic effect of MACL and PEAAc can obtain perovskite thin film with better crystalline quality and fewer defects, thereby effectively improving the open-circuit voltage and photoelectric conversion efficiency of the perovskite solar cell device.

Description

Technical Field

[0001] This invention belongs to the field of tandem photovoltaic technology, and relates to the fabrication process of perovskite solar cells, specifically providing a method for fabricating wide-bandgap perovskite solar cells. Background Technology

[0002] As the third generation of solar cells in the field of photovoltaic technology, organic-inorganic hybrid perovskite solar cells (PSCs) are considered one of the most promising photovoltaic technologies due to their high efficiency, low cost, and solution processability. In recent years, the best power conversion efficiency (PCE) of single-junction PSCs has reached 26%. Building on this, to further improve the performance of perovskite solar cells, address the efficiency limit of single-junction perovskites, and achieve inexpensive manufacturing, tandem perovskite solar cells have emerged. All-perovskite tandem solar cells include lead-based mixed bromide-iodide wide-bandgap perovskite top cells and mixed lead and tin narrow-bandgap perovskite bottom cells. Most of the functional layers can be fabricated using low-temperature solution processing techniques and are compatible with flexible substrates, demonstrating great potential for developing next-generation cost-effective photovoltaic technologies.

[0003] However, the open-circuit voltage (V) of current all-perovskite tandem solar cells OC The voltage drop is still below its theoretical limit, likely due to the large voltage drop of the sub-cells, especially in wide-bandgap sub-cells containing large amounts of bromine (Br), which are prone to phase segregation. Mixtures of iodine (I) and bromine typically suffer from severe phase segregation and poor energy level alignment in wide-bandgap perovskite solar cells (WBG), resulting in a large open-circuit voltage (V). OC This leads to energy loss, resulting in reduced efficiency and preventing the efficient conversion of solar energy into electricity. This problem urgently needs to be solved. Summary of the Invention

[0004] This invention provides a method for fabricating a wide-bandgap perovskite solar cell, addressing the problem in existing technologies where the wide-bandgap perovskite light-absorbing layer suffers from numerous defects, phase separation, and poor crystal quality, hindering carrier transport and consequently reducing the open-circuit voltage and efficiency of the perovskite solar cell. This invention introduces methylamine hydrochloride (MACL) and phenylethyl ammonium acetate (PEAAc) as additives during the fabrication of the perovskite light-absorbing layer for the wide-bandgap perovskite solar cell. Methylamine hydrochloride (MACL) can significantly inhibit the degradation of the perovskite precursor solution; its use as a precursor additive is beneficial for preparing high-quality perovskite films with oriented growth and excellent crystallinity. The NH2 in phenylethyl ammonium acetate (PEAAc) can provide Pb... 2+Electrons passivate halogen vacancies; simultaneously, the negatively charged COO- groups can interact with undercoordinated formamidinium ions (FA+) and lead ions (Pb2+) through hydrogen bonds and coordination bonds, respectively; furthermore, PEAAc enhances the uniform distribution of halide phases and reduces the defect density in perovskite films by regulating the crystallization rate of mixed halides; in addition, the synergistic effect of MACL and PEAAc can yield perovskite films with better crystal quality and fewer defects, thereby effectively improving the open-circuit voltage and photoelectric conversion efficiency of perovskite solar cell devices.

[0005] To achieve the above objectives, the technical solution adopted by the present invention is as follows:

[0006] A method for fabricating a wide-bandgap perovskite solar cell, characterized by comprising the following steps:

[0007] Step 1: Clean the transparent conductive glass substrate;

[0008] Step 2: A hole transport layer is deposited on the surface of a transparent conductive glass substrate using magnetron sputtering.

[0009] Step 3: Prepare a 2PACz ethanol solution, spin-coat it onto the surface of the hole transport layer, and then anneal it to form a 2PACz layer;

[0010] Step 4: Prepare a wide-bandgap perovskite modified precursor solution, including: an initial perovskite precursor solution and MACl, wherein the molar concentration of MACl is 10% to 30% of the molar concentration of the initial perovskite precursor solution.

[0011] Step 5: Spin-coat the wide-bandgap perovskite modified precursor solution onto the surface of the 2PACz layer and then anneal it to form a perovskite light-absorbing layer.

[0012] Step 6: An electron transport layer is deposited on the surface of the perovskite light-absorbing layer using a vacuum thermal evaporation process;

[0013] Step 7: An electrode layer is deposited on the surface of the electron transport layer using a vacuum thermal evaporation process to obtain a wide-bandgap perovskite solar cell.

[0014] Furthermore, in step 1, the cleaning process is as follows: ultrasonically clean the transparent conductive glass substrate with acetone for 10 min to 20 min, then ultrasonically clean the transparent conductive glass substrate with ethanol for 10 min to 20 min, and then dry it in an oven for later use.

[0015] Furthermore, in step 2, the hole transport layer is a nickel oxide layer.

[0016] Furthermore, in step 3, the concentration of the 2PACz ethanol solution is 1 mg / mL to 3 mg / mL, and the spin-coating process is as follows: the 2PACz ethanol solution is spin-coated onto the surface of the hole transport layer at a speed of 2000 rpm to 5000 rpm for 30 s to 40 s; the annealing process is as follows: annealing is performed at a temperature of 100℃ to 150℃ for 10 min to 20 min.

[0017] Furthermore, in step 4, the wide-bandgap perovskite modified precursor solution also includes: PEAAc, the molar concentration of PEAAc being 0.2% to 0.8% of the molar concentration of the initial perovskite precursor solution.

[0018] Furthermore, in step 4, the molar ratio of CsI, MABr, FAI, PbI2 to PbBr2 in the initial perovskite precursor solution is 0.05:0.43:0.52:0.57:0.47.

[0019] Furthermore, in step 5, the spin coating process is as follows: First, the precursor solution of the perovskite light-absorbing layer is spin-coated at an acceleration of 800 rpm / s to 1500 rpm / s for 3s to 8s; then, it is spin-coated at a speed of 4000 rpm to 6000 rpm for 40s, and 0.1 mL to 0.2 mL of chlorobenzene anti-solvent is dropped onto the surface 5s to 15s after the start of the current spin coating.

[0020] The annealing process is as follows: anneal at a temperature of 100℃~150℃ for 30min~60min.

[0021] Furthermore, in step 6, the electron transport layer consists of lithium fluoride (LiF) and a carbon 60 layer (C). 60 The structure consists of layers of 2,9-dimethyl-4,7-biphenyl-1,10-phenanthroline (BCP) stacked sequentially.

[0022] Furthermore, in step 7, the electrode layer is made of silver (Ag) or gold (Au).

[0023] Based on the above technical solution, the beneficial effects of the present invention are as follows:

[0024] 1. This invention provides a method for preparing a wide-bandgap perovskite solar cell. By adding MACl to the wide-bandgap perovskite precursor solution, it is possible to effectively induce the formation of initial nuclei with a (100) preferred orientation and connect adjacent seed crystals, thereby limiting the tilting of the grains and improving the crystal quality of the perovskite layer. In addition, by adding PEAAc solution to the perovskite precursor solution, the negatively charged COO- groups can interact with the undercoordinated formamidinium ions (FA+) and lead ions (Pb2+) through hydrogen bonds and coordination bonds, respectively, which can passivate halogen vacancies, enhance the uniform distribution of halide phases, and reduce the defect density in the perovskite film, thereby forming a denser and smoother perovskite film, and ultimately effectively improving the overall performance of the wide-bandgap perovskite solar cell.

[0025] 2. This invention provides a method for preparing a wide-bandgap perovskite solar cell, which can improve the yield of wide-bandgap perovskite solar cells, obtain high open-circuit voltage and better cell conversion efficiency, and is more conducive to the stacked application and long-term use of the cells.

[0026] 3. This invention provides a method for preparing a wide-bandgap perovskite solar cell. Based on the polymer's resistance to moisture and good transfer of interfacial charges, the long-term stability of the wide-bandgap perovskite solar cell is significantly improved, thereby solving the problem of poor stability. Attached Figure Description

[0027] Figure 1 This is a schematic diagram of the structure of the inverted perovskite solar cell prepared in this invention.

[0028] Figure 2 This is a schematic diagram of the spin-coating and annealing process of the hole transport layer and the perovskite light-absorbing layer in the inverted perovskite solar cell of the present invention.

[0029] Figure 3 The X-ray diffraction (XRD) patterns are those of the wide-bandgap perovskite thin films prepared in Examples 1-3 and Comparative Example 1 of this invention.

[0030] Figure 4 The external quantum efficiency (EQE) spectra of the wide-bandgap perovskite solar cells prepared in Examples 1-3 and Comparative Example 1 of this invention are shown.

[0031] Figure 5 The X-ray diffraction (XRD) patterns of the wide-bandgap perovskite thin films prepared in Examples 2, 4, 5 and Comparative Example 1 of this invention are shown.

[0032] Figure 6 The images show the time-resolved photoluminescence (TRPL) spectra of the wide-bandgap perovskite thin films prepared in Examples 4-5 and Comparative Example 1 of this invention. Detailed Implementation

[0033] To make the objectives, technical solutions, and beneficial effects of this invention clearer, the invention will be further described in detail below with reference to the accompanying drawings and embodiments.

[0034] This invention provides a method for fabricating a wide-bandgap perovskite solar cell, wherein the wide-bandgap perovskite solar cell is as follows: Figure 1 As shown, the structure includes, from bottom to top, a substrate, a conductive layer, a hole transport layer, a perovskite light-absorbing layer, an electron transport layer, and an electrode layer. In the preparation process of the perovskite light-absorbing layer of the wide-bandgap perovskite solar cell, this invention adds MACl and PEAAc as additives to the precursor solution to optimize the performance of the perovskite light-absorbing layer, thereby improving the yield of the wide-bandgap perovskite solar cell and enabling the prepared wide-bandgap perovskite solar cell to achieve high open-circuit voltage and better cell conversion efficiency, which is beneficial for the commercial application of wide-bandgap perovskite solar cells.

[0035] Specifically, on the one hand, by adding MACl to the wide-bandgap perovskite precursor solution, this invention can effectively induce the formation of initial nuclei with a (100) preferred orientation and connect adjacent seed crystals, restricting grain tilt and improving the crystallinity of the perovskite layer; on the other hand, after the PEAAc solution is added to the perovskite precursor solution, the negatively charged COO- groups can bond with the undercoordinated formamidinium ions (FA) through hydrogen bonds and coordination bonds, respectively. + ) and lead ions (Pb 2+ The interaction between the two phases can passivate halogen vacancies, enhance the uniform distribution of halide phases, and reduce the defect density in perovskite films, thereby forming a denser and smoother perovskite film, which effectively improves the overall performance of wide-bandgap perovskite solar cells.

[0036] On the other hand, due to the polymer's resistance to moisture and good transfer of interfacial charges, the long-term stability of wide-bandgap perovskite solar cells is significantly improved, thus solving the problem of poor stability caused by lithium fluoride passivation layers.

[0037] On the other hand, the perovskite layer formed by adding PEAAc in this invention has good conductivity. Tests have shown that the perovskite solar cell prepared by the precursor solution with added PEAAc has a stronger carrier extraction capability. It can basically eliminate charge accumulation at the perovskite / 2PACz interface, quickly extract charge, effectively slow down perovskite degradation, and improve the long-term stability of wide-bandgap perovskite solar cells.

[0038] To further enhance the bonding between PEAAc and perovskite, the concentration of the PEAAc solution was 0.1 mmol / ml to 0.3 mmol / ml.

[0039] To ensure sufficient light absorption thickness and further reduce spin coating speed, the thickness of the perovskite light-absorbing layer is 300 nm to 500 nm.

[0040] In order to facilitate electron transport, the electron transport layer is made of a wide bandgap semiconductor, such as fullerene and its derivatives (PCBM); the electron transport layer may include multiple stacked transport sublayers, and the total thickness of the electron transport layer is 10 nm to 50 nm.

[0041] In order to better extract the charge carriers generated by the perovskite layer under light irradiation, the thickness of the hole transport layer is 20nm to 40nm.

[0042] The specific embodiments of the present invention will be described in detail below, and the beneficial effects of the present invention will be illustrated by comparison with test results based on comparative examples.

[0043] Example 1

[0044] This embodiment provides a method for fabricating a wide-bandgap perovskite solar cell, and the structure of the fabricated wide-bandgap perovskite solar cell is as follows. Figure 1 As shown, the specific steps include the following:

[0045] Step 1: Use acetone to ultrasonically clean the transparent conductive glass substrate (glass substrate covered with a conductive layer) for 15 minutes, then use ethanol to ultrasonically clean the transparent conductive glass substrate for 15 minutes. Dry the cleaned transparent conductive glass substrate in an oven for later use.

[0046] Step 2: A NiO layer with a thickness of 30 nm is deposited on the surface of a transparent conductive glass substrate using a magnetron sputtering process to form a hole transport layer;

[0047] Step 3: Dissolve 2PACz in anhydrous ethanol to prepare a 2PACz ethanol solution with a concentration of 1 mg / mL. Take 100 μL of the 2PACz ethanol solution and spin-coat it onto the surface of the NiO layer at a speed of 3000 rpm for 30 s. Then anneal it on a hot plate at a temperature of 100 °C for 10 min to form a 2PACz layer.

[0048] Step 4: Dissolve 108.73 mg of FAI, 16.37 mg of CsI, 57.92 mg of MABr, 320.64 mg of PbI2, 208.85 mg of PbBr2 and 8.17 mg of MACl in 1 mL of mixed solvent and stir for 12 h to obtain a wide-bandgap perovskite modified precursor solution. The mixed solvent consists of DMF and DMSO, and the volume ratio of DMF to DMSO is 3:1.

[0049] Step 5: Spin-coat the wide-bandgap perovskite primary modification precursor solution onto the surface of the 2PACz layer. First, spin-coat at an acceleration of 1333 rpm / s for 3 s; then, spin-coat at a speed of 4000 rpm for 40 s, and add 0.12 mL of chlorobenzene anti-solvent to the spin-coating surface 7 seconds after the start of the current spin-coating; after spin-coating is completed, place the substrate on a hot stage and anneal at a temperature of 100℃ for 60 min to form a perovskite light-absorbing layer;

[0050] Step 6: Using a vacuum thermal evaporation process, sequentially deposit lithium fluoride (LiF) with a thickness of 1 nm and C with a thickness of 10 nm on the surface of the perovskite light-absorbing layer. 60 And a 15nm thick BCP forms an electron transport layer;

[0051] Step 7: A 120 nm thick silver layer is deposited on the surface of the electron transport layer using a vacuum thermal evaporation process. During deposition, electrode patterning is performed using a mask to form the electrode layer, thus obtaining the desired result. Figure 1 The wide-bandgap perovskite solar cell shown.

[0052] Example 2

[0053] This embodiment provides a method for preparing a wide-bandgap perovskite solar cell. The process is the same as in Embodiment 1, except that in step 4, the mass of MACl weighed is 16.34 mg. The other steps are exactly the same, and an inverse wide-bandgap perovskite solar cell is finally prepared.

[0054] Example 3

[0055] This embodiment provides a method for preparing a wide-bandgap perovskite solar cell. The process is the same as in Embodiment 1, except that in step 4, the mass of MACl weighed is 24.51 mg. All other steps are exactly the same, and an inverse wide-bandgap perovskite solar cell is finally prepared.

[0056] Example 4

[0057] This embodiment fabricates a wide-bandgap perovskite solar cell, and the structure of the resulting wide-bandgap perovskite solar cell is as follows. Figure 1 As shown, the specific steps include the following:

[0058] Step 1: Use acetone to ultrasonically clean the transparent conductive glass substrate (glass substrate covered with a conductive layer) for 15 minutes, then use ethanol to ultrasonically clean the transparent conductive glass substrate for 15 minutes. Dry the cleaned transparent conductive glass substrate in an oven for later use.

[0059] Step 2: A NiO layer with a thickness of 30 nm is deposited on the surface of a transparent conductive glass substrate using a magnetron sputtering process to form a hole transport layer;

[0060] Step 3: Dissolve 2PACz in anhydrous ethanol to prepare a 2PACz ethanol solution with a concentration of 1 mg / mL. Take 100 μL of the 2PACz ethanol solution and spin-coat it onto the surface of the NiO layer at a speed of 3000 rpm for 30 s. Then anneal it on a hot plate at a temperature of 100 °C for 10 min to form a 2PACz layer.

[0061] Step 4: Dissolve 108.73 mg of FAI, 16.37 mg of CsI, 57.92 mg of MABr, 320.64 mg of PbI2, 208.85 mg of PbBr2 and 16.34 mg of MACl in 1 mL of a mixed solvent and stir for 12 h to obtain a wide-bandgap perovskite modified precursor solution. The mixed solvent consists of DMF and DMSO, and the volume ratio of DMF to DMSO is 3:1.

[0062] 18.12 mg of phenylethyl ammonium acetate (PEAAc) was dissolved in 1 mL of mixed solvent and stirred for 12 h to prepare a PEAAc solution. The mixed solvent consisted of DMF and DMSO, and the volume ratio of DMF to DMSO was 4:1.

[0063] Take 40 μL of PEAAc solution and add it to 1 mL of wide-bandgap perovskite modified precursor solution to prepare a wide-bandgap perovskite mixed modified precursor solution.

[0064] Step 5: Spin-coat the wide-bandgap perovskite precursor solution onto the surface of the 2PACz layer. First, spin-coat at an acceleration of 1333 rpm / s for 3 s; then, spin-coat at a speed of 4000 rpm for 40 s, and add 0.12 mL of chlorobenzene anti-solvent to the spin-coating surface 7 seconds after the start of the current spin-coating; after spin-coating is completed, place the substrate on a hot stage and anneal at 100℃ for 60 min to form a perovskite light-absorbing layer;

[0065] Step 6: Using a vacuum thermal evaporation process, sequentially deposit lithium fluoride (LiF) with a thickness of 1 nm and C with a thickness of 10 nm on the surface of the perovskite light-absorbing layer. 60 And a 15nm thick BCP forms an electron transport layer;

[0066] Step 7: A 120 nm thick silver layer is deposited on the surface of the electron transport layer using a vacuum thermal evaporation process. During deposition, electrode patterning is performed using a mask to form the electrode layer, thus obtaining the desired result. Figure 1 The wide-bandgap perovskite solar cell shown.

[0067] Example 5

[0068] This embodiment provides a method for preparing a wide-bandgap perovskite solar cell. The process is the same as in Example 4, except that in step 4, 80 μL of PEAAc solution is added to 1 mL of the initial solution of the wide-bandgap perovskite precursor to prepare the wide-bandgap perovskite precursor solution. The other steps are exactly the same, and the inverted wide-bandgap perovskite solar cell is finally prepared.

[0069] Comparative Example 1

[0070] This comparative example prepared a wide-bandgap perovskite solar cell. The preparation process was similar to that of Example 1, except that step 4, which involved weighing 8.17 mg of MACl and preparing a perovskite precursor solution, was omitted. Instead, LiF and C were directly deposited on the perovskite light-absorbing layer obtained in step 5 using vacuum thermal evaporation. 60 The electron transport layer is obtained through BCP; the other steps are exactly the same. This leads to an inverse wide-bandgap perovskite solar cell.

[0071] The performance of the perovskite solar cells prepared in Examples 1-5 and Comparative Example 1 was tested, and the results are shown in Table 1.

[0072] Table 1

[0073]

[0074] As shown in Table 1, Examples 1-3 exhibit higher open-circuit voltage and higher photoelectric conversion efficiency compared to Comparative Example 1, and also possess a high fill factor. Among them, Example 2 has the highest open-circuit voltage and photoelectric conversion efficiency. This demonstrates that the introduction of MACl as an additive to the perovskite light-absorbing layer in this invention has an excellent defect passivation effect on the perovskite light-absorbing layer. Furthermore, Examples 4 and 5 have even higher open-circuit voltage and photoelectric conversion efficiency, proving that PEAAc as an additive to the perovskite light-absorbing layer can further significantly improve the open-circuit voltage of the device.

[0075] To elaborate further:

[0076] like Figure 2 The diagram shows the spin-coating and annealing process of the hole transport layer and the perovskite light-absorbing layer in the above embodiment. The preparation process of the perovskite thin film can be clearly seen from the figure.

[0077] like Figure 3The X-ray diffraction (XRD) patterns of the wide-bandgap perovskite films prepared in Examples 1-3 and Comparative Example 1 of the present invention are shown. As can be seen from the figure, compared with Comparative Example 1, after the addition of MACl, the ratio of the intensity of the characteristic peak of perovskite (2θ value of 14.5° for (100) crystal plane and 2θ value of 20.5° for (110) crystal plane) to the intensity of the characteristic peak of PbX2 (X is Br or I) (corresponding to 2θ value of 12.8°) in Examples 1-3 is larger, indicating that the perovskite light-absorbing layer in the present invention has higher crystal quality;

[0078] like Figure 4 The figure shows the external quantum efficiency (EQE) spectra of the wide-bandgap perovskite solar cells prepared in Examples 1-3 and Comparative Example 1 of the present invention. As can be seen from the figure, compared with Comparative Example 1, the absorption of light by the devices in Examples 1-3 is improved after the addition of MACl, and the surface devices have higher short-circuit current density.

[0079] like Figure 5 The X-ray diffraction (XRD) patterns of the wide-bandgap perovskite films prepared in Examples 2, 4, and 5 of the present invention and Comparative Example 1 are shown. As can be seen from the figure, the introduction of MACl into the perovskite light-absorbing layer can effectively improve the intensity of the characteristic peaks of the perovskite (the 2θ value corresponding to the (100) crystal plane is 14.5°, and the 2θ value corresponding to the (110) crystal plane is 20.5°). Furthermore, the addition of PEAAc can further improve the intensity of the characteristic peaks of the perovskite.

[0080] like Figure 6 The figure shows the time-resolved photoluminescence (TRPL) spectra of the wide-bandgap perovskite films prepared in Examples 4-5 and Comparative Example 1 of the present invention. As can be seen from the figure, compared with Comparative Example 1, the normalized intensity of Examples 4 and 5 decreased faster after the addition of PEAAc, indicating that the perovskite films prepared after the addition of PEAAc have better carrier extraction and better charge transport capabilities.

[0081] The above description is merely a specific embodiment of the present invention. Any feature disclosed in this specification may be replaced by other equivalent or similar features unless otherwise specified. All disclosed features, or steps in all methods or processes, may be combined in any way except for mutually exclusive features and / or steps.

Claims

1. A method for preparing a wide bandgap perovskite solar cell, characterized in that, The method comprises the following steps: Step 1, cleaning the transparent conductive glass substrate; Step 2, depositing a hole transport layer on the surface of the transparent conductive glass substrate by a magnetron sputtering process, wherein the hole transport layer is a nickel oxide layer; Step 3, preparing a 2PACz ethanol solution, spin-coating the 2PACz ethanol solution on the surface of the hole transport layer, and then performing annealing treatment to form a 2PACz layer; Step 4, preparing a wide-bandgap perovskite modified precursor solution, wherein the wide-bandgap perovskite modified precursor solution comprises a perovskite initial precursor solution and MACl, the molar concentration of the MACl is 10% to 30% of the molar concentration of the perovskite initial precursor solution, the wide-bandgap perovskite modified precursor solution further comprises PEAAc, and the molar concentration of the PEAAc is 0.2% to 0.8% of the molar concentration of the perovskite initial precursor solution; the molar ratio of CsI, MABr, FAI, PbI2 and PbBr2 in the perovskite initial precursor solution is 0.05:0.43:0.52:0.57:0.47; Step 5, spin-coating the wide-bandgap perovskite modified precursor solution on the surface of the 2PACz layer, and then performing annealing treatment to form a perovskite light-absorbing layer; Step 6, a vacuum thermal evaporation process is used to deposit an electron transport layer on the surface of the perovskite light-absorbing layer, the electron transport layer is composed of lithium fluoride (LiF), a carbon 60 layer (C 60 ), and a 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline layer (BCP) stacked in sequence; Step 7, depositing an electrode layer on the surface of the electron transport layer by a vacuum thermal evaporation process to obtain a wide-bandgap perovskite battery.

2. The method for fabricating a wide-bandgap perovskite solar cell according to claim 1, characterized in that, In step 1, the cleaning process is as follows: the transparent conductive glass substrate is ultrasonically cleaned with acetone for 10 minutes to 20 minutes, then ultrasonically cleaned with ethanol for 10 minutes to 20 minutes, and dried in an oven for standby.

3. The method for fabricating a wide-bandgap perovskite solar cell according to claim 1, characterized in that, In step 3, the concentration of the 2PACz ethanol solution is 1 mg / mL to 3 mg / mL, the spin-coating process is as follows: the 2PACz ethanol solution is spin-coated on the surface of the hole transport layer at a speed of 2000 rpm to 5000 rpm, and the spin-coating time is 30 seconds to 40 seconds; and the annealing treatment process is as follows: annealing at a temperature of 100 DEG C to 150 DEG C for 10 minutes to 20 minutes.

4. The method of claim 1, wherein the wide-bandgap perovskite solar cell is prepared by the steps of: In step 5, the spin-coating process is as follows: firstly, the precursor solution of the perovskite light-absorbing layer is spin-coated at an acceleration of 800 rpm / s to 1500 rpm / s for 3 seconds to 8 seconds; then, spin-coated at a speed of 4000 rpm to 6000 rpm for 40 seconds, and 0.1 mL to 0.2 mL of chlorobenzene anti-solvent is added on the surface after 5 seconds to 15 seconds from the start of the current spin-coating; and the annealing treatment process is as follows: annealing at a temperature of 100 DEG C to 150 DEG C for 30 minutes to 60 minutes.

5. The method of claim 1, wherein the wide-bandgap perovskite solar cell is prepared by the steps of: In step 7, the electrode layer is made of silver (Ag) or gold (Au).

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