Preparation method of neuromorphic device based on antiferroelectric material

Abstract

The invention belongs to the technical field of electronic materials and neuromorphic devices, and particularly relates to a preparation method of a neuromorphic device based on an anti-ferroelectric material. The material is prepared by putting high-purity raw materials of Cu, Bi, P and Se into a quartz tube and taking I2 as a gas-phase transmission agent through a chemical gas-phase transmission method. The CuBiP2Se6 thin film prepared by the invention is a Van der Waals antiferroelectric material, and a CuBiP2Se6 device prepared from the material has remarkable synaptic plasticity and can effectively simulate a biological synaptic behavior; the preparation method is simple and easy to implement and suitable for batch production, and the prepared device has low power consumption, high response speed and excellent stability and is suitable for neuromorphic calculation application.

Description

Technical Field

[0001] The present application belongs to the technical field of electronic materials and neuromorphic devices, and specifically relates to a method for preparing a neuromorphic device based on antiferroelectric materials. Background Art

[0002] With the rapid development of artificial intelligence and neural network technology, neuromorphic devices with brain-like computing capabilities have gradually become a research hotspot. These devices provide efficient and low-power information processing capabilities by simulating the functions of biological neurons and synapses. Traditional neuromorphic devices are mostly based on phase change materials, ion migration materials or magnetic materials, but these materials usually have problems such as high energy consumption, poor controllability or complex preparation processes.

[0003] The van der Waals antiferroelectric material CuBiP2Se6 exhibits excellent response performance due to its unique layered structure and polarization-electric field characteristics, and is particularly suitable for simulating synaptic plasticity and neuronal firing behavior. However, there is currently a lack of an efficient, low-cost, and highly stable method for preparing neuromorphic devices based on CuBiP2Se6 materials. The present invention aims to solve the above problems and proposes a method for preparing neuromorphic devices based on CuBiP2Se6 materials. Summary of the invention

[0004] The purpose of the present invention is to provide a method for preparing a neuromorphic device of CuBiPSe6 material and its application, which method can realize the efficient simulation of neural synaptic behavior by the device and has the characteristics of low energy consumption, simple preparation process and stable performance.

[0005] Based on this, the first technical solution of the present application discloses a method for preparing a neuromorphic device based on CuBiP2Se6 material, comprising the following steps:

[0006] Preparation of CuBiP2Se6 single crystal: Using silicon wafer as substrate, CuBiP2Se6 single crystal is prepared by chemical vapor transport method;

[0007] Preparation of CuBiP2Se6 thin film: CuBiP2Se6 single crystal is peeled off from silicon wafer substrate to obtain CuBiP2Se6 thin film;

[0008] Preparation of CuBiP2Se6 device: The surface of the CuBiP2Se6 film is subjected to photolithography, etching, and electrode deposition to obtain a CuBiP2Se6 device of target morphology.

[0009] Furthermore, the chemical vapor transport method is to place high-purity raw materials of Cu, Bi, P and Se in a quartz tube and use I2 as a vapor transport agent.

[0010] Furthermore, the quartz tube is sealed and placed in a dual-temperature zone tubular furnace, with the high temperature zone temperature maintained at 850° C. and the low temperature zone temperature maintained at 750° C. for 7 days to form a CuBiP2Se6 single crystal.

[0011] Furthermore, the CuBiP2Se6 film has a thickness of 5-20 nm.

[0012] Furthermore, the thickness of the deposited electrode is 50 nm.

[0013] And, the CuBiP2Se6 device prepared according to the above preparation method.

[0014] The second technical solution of the present application discloses the application of the above-mentioned CuBiP2Se6 device in computer brain-like computing.

[0015] Furthermore, in the application, the operating voltage of the CuBiP2Se6 device is 1-5V.

[0016] The beneficial effects of the present application are as follows: the CuBiP2Se6 thin film prepared in the present application is a van der Waals antiferroelectric material, and the CuBiP2Se6 device prepared using this material has significant synaptic plasticity and can effectively simulate biological synaptic behavior; and the preparation method is simple and easy, suitable for mass production, and the prepared device has low power consumption, high response speed and excellent stability, and is suitable for neuromorphic computing applications. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] Figure 1 This is a schematic diagram of the device structure prepared in Example 1;

[0018] Figure 2 is the linear IV test result of the device prepared in Example 1;

[0019] Figure 3 This is the pulse test result of the device prepared in Example 1. DETAILED DESCRIPTION

[0020] The present invention is further described in detail below in conjunction with specific examples. This implementation case is implemented based on the technology of the present invention, and a detailed implementation method and specific operation process are now given to illustrate that the present invention is creative, but the protection scope of the present invention is not limited to the following examples.

[0021] The first embodiment of the present application discloses a method for preparing a neuromorphic device based on CuBiP2Se6 material, comprising the following steps:

[0022] Preparation of CuBiP2Se6 single crystal: Using silicon wafer as substrate, CuBiP2Se6 single crystal is prepared by chemical vapor transport method;

[0023] Preparation of CuBiP2Se6 thin film: CuBiP2Se6 single crystal is peeled off from silicon wafer substrate to obtain CuBiP2Se6 thin film;

[0024] Preparation of CuBiP2Se6 device: The surface of the CuBiP2Se6 film is subjected to photolithography, etching, and electrode deposition to obtain a CuBiP2Se6 device of target morphology.

[0025] In this embodiment, the chemical vapor transport method is to place high-purity raw materials of Cu, Bi, P and Se in a quartz tube, and use I2 as a vapor transport agent. The quartz tube is sealed and placed in a dual-temperature zone tube furnace, maintaining about 850°C in the high temperature zone and about 750°C in the low temperature zone, and the reaction lasts for 7 days to form high-quality CuBiP2Se6 single crystals.

[0026] In this embodiment, the CuBiP2Se6 single crystal exfoliation silicon wafer can be mechanically exfoliated or other van der Waals layered material preparation techniques can be used to obtain the CuBiP2Se6 thin film. The thickness of the exfoliated film is 5-20nm. Within this thickness range, the device performance can be optimized.

[0027] In this embodiment, after obtaining the CuBiP2Se6 thin film, it is prepared into the expected structural morphology using micro-nano processing technology (photolithography, etching) and other processes according to the target morphology, thereby obtaining the CuBiP2Se6 device pattern.

[0028] In this embodiment, after the CuBiP2Se6 thin film is processed by micro-nano processing technology, an electrode is deposited on the surface. The electrode is Au, Pt, etc. The electrode is deposited by conventional deposition methods in the field such as electron beam evaporation and thermal evaporation to ensure good interface contact. The thickness of the deposited electrode is 50nm. After the electrode is evaporated, it is placed in an acetone solution for 3 hours to strip off the metal other than the electrode to obtain a CuBiP2Se6 device.

[0029] In this embodiment, the silicon wafer substrate needs to be cleaned and dried in sequence with acetone, isopropyl alcohol and deionized water before use, which is a conventional treatment method in the art and will not be described in detail in this application.

[0030] The technical effects of the device prepared by the present application will be described in detail below with reference to specific embodiments and drawings.

[0031] Example 1 Preparation of CuBiP2Se6 Device

[0032] 1. Synthesis of CuBiP2Se6: High-purity raw materials of Cu (2.5mmol), Bi (2.5mmol), P (5mmol) and Se (15mmol) were placed in a quartz tube, and I2 (1mmol) was used as a gas phase transport agent. The quartz tube was sealed and placed in a dual-temperature zone tubular furnace, maintaining about 850°C in the high temperature zone and about 750°C in the low temperature zone. The reaction lasted for 7 days to form high-quality CuBiP2Se6 single crystals.

[0033] 2. Preparation of CuBiP2Se6 thin film: The CuBiP2Se6 thin film is obtained by mechanical exfoliation or other van der Waals layered material preparation techniques. The thickness of the film obtained by exfoliation is 5-20 nm, and it is transferred to a clean silicon wafer through a transfer platform.

[0034] 3. Construction of CuBiP2Se6 device: (1) Prepare it into the expected electrode shape and structure pattern through micro-nano processing technology (photolithography, etching) and other processes; (2) Electrode deposition: Use electron beam evaporation, thermal evaporation and other conventional deposition methods in the field to deposit Au or Pt. The temperature in the cavity is less than 100°C to ensure good interface contact. The deposited electrode thickness is 50nm. After the electrode is evaporated, it is placed in an acetone solution for 3 hours to peel off the metal other than the electrode to obtain a CuBiP2Se6 device. Figure 1 As shown, both electrodes are Au or Pt electrodes.

[0035] 4. CuBiP2Se6 device test: The device was tested on a probe station using a digital source meter Keithley 2636B to connect the positive electrode at one end of the device and the ground at the other end. First, the linear IV of the device was tested, and the voltage was swept from 0V to 3V in both directions. Figure 2 It can be seen that after 10 consecutive scans, the current of the device increases with the increase in the number of scans and shows hysteresis, which proves that the CuBiP2Se6 device can effectively simulate neural synapses and show excellent stability. Figure 3 For the pulse test of the device, by applying 10 consecutive identical pulse voltages of 3V to the device, reading the voltage of 0.5V, and pulse width of 100ms, it can be seen that the current of the device rises rapidly when the pulse voltage is applied, showing a high response speed. In summary, the device of the present application can efficiently simulate the behavior of neural synapses.

[0036] Finally, it should be noted that the above implementation cases are only used to illustrate the technical solution of the present invention rather than to limit it. Although the present invention has been described in detail with reference to the preferred implementation cases, those skilled in the art should understand that the technical solution of the present invention can be modified or replaced by equivalents without departing from the purpose and scope of the technical solution of the present invention, which should be included in the scope of the claims of the present invention.

Claims

1. A method for preparing a neuromorphic device based on antiferroelectric materials, characterized in that: The steps include: Preparation of CuBiP2Se6 single crystal: Using silicon wafer as substrate, CuBiP2Se6 single crystal is prepared by chemical vapor transport method; Preparation of CuBiP2Se6 thin film: CuBiP2Se6 single crystal is peeled off from silicon wafer substrate to obtain CuBiP2Se6 thin film; Preparation of CuBiP2Se6 device: The surface of the CuBiP2Se6 film is subjected to photolithography, etching, and electrode deposition to obtain a CuBiP2Se6 device of target morphology.

2. The preparation method according to claim 1, characterized in that: The chemical vapor transport method is to place high-purity raw materials of Cu, Bi, P and Se in a quartz tube and use I2 as a vapor transport agent.

3. The preparation method according to claim 2, characterized in that: The quartz tube is sealed and placed in a dual-temperature zone tubular furnace, with the high temperature zone temperature maintained at 850° C. and the low temperature zone temperature maintained at 750° C. for 7 days to form a CuBiP2Se6 single crystal.

4. The preparation method according to claim 1, characterized in that: The CuBiP2Se6 film has a thickness of 5-20 nm.

5. The preparation method according to claim 1, characterized in that: The thickness of the deposited electrode is 50 nm.

6. A CuBiP2Se6 device prepared according to any one of the preparation methods of claims 1-4.

7. An application of the CuBiP2Se6 device according to claim 5 in computer brain-like computing.

8. The use according to claim 7, characterized in that: The operating voltage of the CuBiP2Se6 device is 1-5V.

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