Anti-radiation packaging structure and manufacturing method thereof

Abstract

The invention relates to an anti-radiation packaging structure and a manufacturing method thereof. The structure comprises a first redistribution layer; a protective layer disposed under the first redistribution layer; a metal pillar disposed over the first redistribution layer; the processor chip module is arranged on the first redistribution layer; the protective cover covers the processor chip module; the plastic packaging layer is used for plastic packaging and wrapping the metal columns, the processor chip module and the protective cover; the second rewiring layer is arranged on the plastic packaging layer; the detector chip module is arranged on the second rewiring layer; and welding balls. According to the anti-radiation packaging structure provided by the invention, the protective cover is arranged above the processor chip module, and the protective layer is arranged below the processor chip module, so that three-dimensional protection is formed on the processor chip module, radiation of the outside to the processor chip module can be effectively reduced, and the service life of the packaging structure is prolonged.

Description

Technical Field

[0001] The present invention relates to the field of packaging technology, and in particular to a radiation-resistant packaging structure and a manufacturing method thereof. Background Art

[0002] X-rays are a type of high-energy radiation. X-ray tubes, magnetrons, and klystrons are the generation devices of X-ray sources. They accelerate electrons in an electric current, bombard heavy metal targets at high speed, and emit X-rays. X-rays have a strong penetrating effect on matter and may cause damage to detection devices, so X-ray protection is required. X-ray detectors are widely used in medical, industrial, and other fields such as CT. The X-ray detector with the highest resolution at present is the photon counter structure X-ray detector. The structural cross-section diagram is shown in the figure. Figure 1 As shown. The photon counter structure X-ray detector can be generally divided into two layers, the upper part is the detector chip (Pixelated sensor layer), and the lower part is the processing chip (Readout chip). The sensor and processing chip are flip-chip and bonded together by welding metal balls. One welding ball corresponds to one pixel, and each pixel corresponds to a processing unit of the processing chip. The detector chip and the processing chip are manufactured using different processes and then stacked in three dimensions. The processor chip below is manufactured using CMOS technology. High-energy rays such as X-rays may cause damage to the processor chip. High-energy rays will produce ionization effects in electronic components, resulting in varying degrees of damage to the device, such as oxide layer charge traps, increased leakage current and other defects, which will greatly reduce the service life of electronic components. Therefore, how to reduce the radiation impact of high-energy rays such as X-rays on the processor chip has become an urgent problem to be solved. Summary of the invention

[0003] In view of some or all of the problems in the prior art, the present invention provides a radiation-resistant packaging structure, which includes:

[0004] A first redistribution layer;

[0005] A protection layer, the protection layer is arranged below the first redistribution layer;

[0006] A metal column, wherein the metal column is arranged on the first redistribution layer and is electrically connected to the first redistribution layer;

[0007] A processor chip module, wherein the processor chip module is arranged on the first redistribution layer, and the processor chip module is electrically connected to the first redistribution layer through a first connection structure;

[0008] A protective cover, wherein the protective cover covers the processor chip module;

[0009] A plastic sealing layer, sealing and covering the metal pillar, the processor chip module and the protective cover;

[0010] A second redistribution layer, wherein the second redistribution layer is arranged on the plastic packaging layer, and the second redistribution layer is electrically connected to the metal column;

[0011] A detector chip module, wherein the detector chip module is arranged on the second redistribution layer, and the detector chip module is electrically connected to the second redistribution layer via a second connection structure;

[0012] A solder ball is arranged below the first redistribution layer and is electrically connected to the first redistribution layer.

[0013] Furthermore, the first connection structure is a solder pad or a solder ball or a bump or a metal bonding wire; and / or

[0014] The second connection structure is a solder pad, a solder ball, a bump, or a metal bonding wire.

[0015] The present invention also provides a method for manufacturing a radiation-resistant packaging structure, the method comprising the following steps:

[0016] Manufacturing a protective layer and a first redistribution layer, and manufacturing a metal column on the first redistribution layer;

[0017] Laminating a processor chip module and a protective cover on the first redistribution layer;

[0018] Making a plastic sealing layer to seal and cover the metal pillar, the processor chip module and the protective cover;

[0019] Thinning the plastic packaging layer to expose the top surface of the metal column and fabricating a second redistribution layer;

[0020] forming solder balls below the first redistribution layer;

[0021] The detector chip module is bonded on the second redistribution layer to form a radiation-resistant packaging structure.

[0022] Furthermore, the first redistribution layer is fabricated on a carrier wafer;

[0023] Before making solder balls, remove the carrier wafer;

[0024] The carrier is a glass sheet, a silicon sheet, a sapphire sheet or a metal sheet.

[0025] Further, the material of the protective layer includes one or more of a polymer or a lead-tungsten material or an aluminum-lead microcomposite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; and / or

[0026] The material of the protective cover includes one or more of a polymer, a lead-tungsten material, an aluminum-lead micro-composite material, or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin.

[0027] Furthermore, a plurality of small holes are arranged on the bottom or side wall of the protective cover to facilitate the plastic packaging material to flow into the protective cover.

[0028] Furthermore, the first redistribution layer includes a plurality of dielectric layers and a plurality of metal layers; and / or

[0029] The second redistribution layer includes a plurality of dielectric layers and a plurality of metal layers.

[0030] Furthermore, the material of the metal column includes one or more of copper, tungsten, silver, aluminum or titanium.

[0031] Furthermore, the processor chip module is attached to the first redistribution layer by face-up or flip-up mounting;

[0032] The processor chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types.

[0033] Furthermore, the plastic encapsulation is injection molding; and / or

[0034] The material of the plastic sealing layer is epoxy resin.

[0035] The technical solution provided by the present invention has the following beneficial effects: the radiation-resistant packaging structure provided by the present invention has a protective cover disposed on the processor chip module and a protective layer disposed under the processor chip module, so as to form a three-dimensional protection for the processor chip module, which can effectively reduce the radiation of high-energy X-rays from the detector direction to the processor chip module, reduce the noise interference of the outside world to the processor chip module, and improve the service life of the packaging structure. The radiation-resistant packaging structure provided by the present invention can be widely used in the fields of high-energy X-ray detection, gamma ray detection, etc. BRIEF DESCRIPTION OF THE DRAWINGS

[0036] To further illustrate the above and other advantages and features of various embodiments of the present invention, a more specific description of various embodiments of the present invention will be presented with reference to the accompanying drawings. It will be understood that these drawings only depict typical embodiments of the present invention and are therefore not to be considered as limiting the scope thereof. In the accompanying drawings, for clarity, identical or corresponding parts will be represented by identical or similar reference numerals.

[0037] Figure 1 A schematic cross-sectional view of the structure of an existing photon counter structure X-ray detector is shown;

[0038] Figure 2 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to an embodiment of the present invention is shown;

[0039] Figure 3 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to another embodiment of the present invention is shown;

[0040] Figure 4 A schematic flow chart showing a method for manufacturing a radiation-resistant packaging structure according to an embodiment of the present invention; and

[0041] Figures 5a-5f A schematic cross-sectional diagram of a process for forming a radiation-resistant packaging structure according to an embodiment of the present invention is shown. DETAILED DESCRIPTION

[0042] In the following description, the present invention is described with reference to various embodiments. However, those skilled in the art will recognize that various embodiments can be implemented without one or more specific details or with other replacement and / or additional methods, materials or components. In other cases, well-known structures, materials or operations are not shown or described in detail to avoid blurring the inventive point of the present invention. Similarly, for the purpose of explanation, specific quantities, materials and configurations are set forth to provide a comprehensive understanding of embodiments of the present invention. However, the present invention is not limited to these specific details. In addition, it should be understood that the various embodiments shown in the drawings are illustrative representations and are not necessarily drawn in correct proportions.

[0043] In this specification, reference to "one embodiment" or "the embodiment" means that a particular feature, structure, or characteristic described in conjunction with the embodiment is included in at least one embodiment of the present invention. The phrase "in one embodiment" appearing in various places in this specification does not necessarily all refer to the same embodiment.

[0044] In this specification, unless otherwise specified, "arranged on...", "arranged above..." and "arranged above..." do not exclude the existence of an intermediate between the two. In addition, "arranged on or above..." only indicates the relative positional relationship between two components, and in certain cases, such as after reversing the product direction, it can also be converted into "arranged below or below...", and vice versa.

[0045] In this specification, unless otherwise specified, "upper surface" and "side surface" are only used to describe the surfaces of the same component. In addition, "first", "second" and "third" are only used to distinguish and do not include differences in size.

[0046] In this specification, unless otherwise specified, the quantifiers "a", "an" do not exclude the presence of a plurality of elements, and the quantifiers "plurality" and "multiple" refer to one or more than one elements.

[0047] It should be noted that the embodiments of the present invention describe the method steps in a specific order, but this is only for the purpose of illustrating the specific embodiment, rather than limiting the order of the steps. On the contrary, in different embodiments of the present invention, the order of the steps can be adjusted according to actual needs.

[0048] The technical solutions in the embodiments of the present invention are described clearly and completely below in conjunction with the accompanying drawings in the embodiments of the present invention.

[0049] Figure 2 FIG. 2 is a cross-sectional schematic diagram of a radiation-resistant packaging structure according to an embodiment of the present invention. Figure 2As shown, the radiation-resistant packaging structure includes a first redistribution layer 101, a protective layer 102, a metal column 103, a first chip module 104, a first connection structure 105, a protective cover 106, a plastic layer 107, a second redistribution layer 108, a solder ball 109, a detector chip module 110, and a second connection structure 111. The protective layer 102 is arranged below the first redistribution layer 101. The metal column 103 is arranged above the first redistribution layer 101, and the metal column 103 is electrically connected to the first redistribution layer 101. The processor chip module 104 is arranged above the first redistribution layer 101, and the processor chip module 104 is electrically connected to the first redistribution layer 101 through the first connection structure 105. The protective cover 106 is arranged above the processor chip module 104 and covers the processor chip module 104, and the protective layer 102 is arranged below the processor chip module 104, so as to form a three-dimensional protection for the processor chip module 104. The plastic encapsulation layer 107 encapsulates and covers the metal pillar 103, the processor chip module 104 and the protective cover 106. The second redistribution layer 108 is arranged on the plastic encapsulation layer 107, and the second redistribution layer 108 is electrically connected to the first redistribution layer 101 through the metal pillar 103. The detector chip module 110 is arranged on the second redistribution layer 108, and the detector chip module 110 is electrically connected to the second redistribution layer 108 through the second connection structure 111. The solder ball 109 is arranged under the first redistribution layer 101, and the solder ball 109 is electrically connected to the first redistribution layer 101. In one embodiment of the present invention, a plurality of radiation-resistant packaging structures can be integrated, and a plurality of processor chip modules 104 and detector chip modules 110 can be packaged at the same time to form an array of radiation-resistant packaging structures.

[0050] In one embodiment of the present invention, the first redistribution layer 101 may include multiple dielectric layers and multiple metal layers; and / or the second redistribution layer 108 may also include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, titanium, or a combination thereof.

[0051] In one embodiment of the present invention, the material of the protective layer 102 includes one or more of a polymer or a lead-tungsten material or an aluminum-lead microcomposite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; and / or the material of the protective cover 106 includes one or more of a polymer or a lead-tungsten material or an aluminum-lead microcomposite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin. In one embodiment of the present invention, a plurality of small holes are arranged at the bottom or side wall of the protective cover 106 to facilitate the flow of the molding compound 107 into the protective cover 106, thereby better protecting the processor chip module 104.

[0052] In one embodiment of the present invention, the material of the metal pillar 103 includes one or more of copper, tungsten, silver, aluminum, or titanium. In one embodiment of the present invention, the height of the metal pillar 103 is 3um-400um.

[0053] In one embodiment of the present invention, the processor chip module 104 may include a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types. In one embodiment of the present invention, the chip may be a logic chip such as a CPU, a DSP, a GPU, or an FPGA, or a storage chip such as a DRAM, a Flash, or an HBM, or other types of chips such as SoC or sensors (such as MEMS sensors, etc.). In one embodiment of the present invention, the first connection structure 105 is a pad or a solder ball or a bump or a metal wire. In one embodiment of the present invention, the first rewiring layer 101 may include an under bump metallization structure, and the material of the under bump metallization structure (UBM) may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the processor chip module 104 may be electrically connected to the first rewiring layer 101 at the under bump metallization structure.

[0054] In one embodiment of the present invention, the material of the plastic packaging layer 107 may be epoxy resin.

[0055] In one embodiment of the present invention, the material of the solder ball 109 may include one or more of copper, nickel, tin, silver, aluminum, or titanium.

[0056] In one embodiment of the present invention, the detector chip module 110 may include a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types. In one embodiment of the present invention, the chip may be an X-ray detection chip or a gamma-ray detection chip, etc. In one embodiment of the present invention, the second connection structure 111 is a pad or a solder ball or a bump or a metal wire. In one embodiment of the present invention, the second redistribution layer 108 may include an under-bump metallization structure, and the material of the under-bump metallization structure may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the detector chip module 110 may be electrically connected to the first redistribution layer 101 at the under-bump metallization structure.

[0057] Figure 3 A cross-sectional schematic diagram of a radiation-resistant packaging structure according to another embodiment of the present invention is shown. Figure 2 This corresponds to the situation where the processor chip module is flipped on the first redistribution layer. Figure 3 This corresponds to the situation where the processor chip module is mounted on the first redistribution layer. Figure 3 As shown, the processor chip module 204 is electrically connected to the first redistribution layer 201 through metal bonding wires.

[0058] Figure 4 A schematic flow chart of a method for manufacturing a radiation-resistant packaging structure according to an embodiment of the present invention is shown. Figures 5a-5f The cross-sectional diagram of the process of forming a radiation-resistant packaging structure according to an embodiment of the present invention is shown. Figure 4 and Figures 5a-5f A method for manufacturing a radiation-resistant packaging structure of the present invention is described.

[0059] First, a protective layer 102 and a first redistribution layer 101 are fabricated, and a metal column 103 is fabricated on the first redistribution layer 101. Figure 5aAs shown. In one embodiment of the present invention, the first redistribution layer 101 and the protective layer 102 are made on a carrier, and the carrier can be a glass sheet or a silicon sheet or a sapphire sheet or a metal sheet. In one embodiment of the present invention, the first redistribution layer 101 can include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer can be an organic material such as polyimide (PI), FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, and titanium, or a combination thereof. In one embodiment of the present invention, the material of the protective layer 102 includes one or more of a polymer or a lead-tungsten material or an aluminum-lead micro-composite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin. In one embodiment of the present invention, the material of the metal column 103 includes one or more of copper or tungsten or silver or aluminum or titanium. In one embodiment of the present invention, the height of the metal column 103 is 3um-400um.

[0060] Next, the processor chip module 104 and the protective cover 106 are attached to the first redistribution layer 101. Figure 5bAs shown. The processor chip module 104 is electrically connected to the first redistribution layer 101 through the first connection structure 105. In one embodiment of the present invention, the processor chip module 104 can be attached to the first redistribution layer 101 in a positive or flip-chip manner. In one embodiment of the present invention, the processor chip module 104 can include multiple identical chips, or multiple chips of the same type, or multiple chips of different types. In one embodiment of the present invention, the chip can be a logic chip such as CPU, DSP, GPU, FPGA, etc., or a storage chip such as DRAM, Flash, HBM, etc., or other types of chips or sensors such as SoC (such as MEMS sensors, etc.). In one embodiment of the present invention, the first connection structure 105 is a pad or a solder ball or a bump or a metal wire. In one embodiment of the present invention, the first redistribution layer 101 may include an under bump metallization structure, and the material of the under bump metallization structure (UBM) may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the processor chip module 104 can be electrically connected to the first redistribution layer 101 at the under bump metallization structure. In one embodiment of the present invention, the material of the protective cover 106 includes one or more of a polymer or a lead-tungsten material or an aluminum-lead microcomposite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin. In one embodiment of the present invention, a plurality of small holes are arranged at the bottom or side wall of the protective cover 106 to facilitate the flow of the molding compound 107 into the protective cover 106, so as to better protect the processor chip module 104.

[0061] Next, a plastic encapsulation layer 107 is manufactured to encapsulate and cover the metal pillar 103, the processor chip module 104 and the protective cover 106. Figure 5c In one embodiment of the present invention, the plastic encapsulation is injection molding, and the material of the plastic encapsulation layer 107 can be epoxy resin.

[0062] Next, the plastic encapsulation layer 107 is thinned to expose the top surface of the metal pillar 103, and the second redistribution layer 108 is formed. Figure 5d As shown. The second redistribution layer 108 is electrically connected to the first redistribution layer 101 through the metal pillar 103. In one embodiment of the present invention, the second redistribution layer 108 may also include multiple dielectric layers and multiple metal layers. In one embodiment of the present invention, the dielectric layer may be an organic material such as polyimide (PI), FR-4, BT resin, or an inorganic material such as SiOx, SiNx; the metal material of the metal layer is preferably one of copper, tungsten, aluminum, copper alloy, titanium, or a combination thereof.

[0063] Next, solder balls 109 are formed under the first redistribution layer 101. Figure 5e The solder ball 109 is electrically connected to the first redistribution layer 101. In one embodiment of the present invention, before making the solder ball 109, the carrier is first removed; the carrier is a glass sheet, a silicon sheet, a sapphire sheet, or a metal sheet.

[0064] Finally, the detector chip module 110 is attached on the second redistribution layer 108 to form a radiation-resistant packaging structure, such as Figure 5f As shown. The detector chip module 110 is electrically connected to the second redistribution layer 108 through the second connection structure 111. In one embodiment of the present invention, the detector chip module 110 may include a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types. In one embodiment of the present invention, the chip may be an X-ray detection chip or a gamma-ray detection chip, etc. In one embodiment of the present invention, the second connection structure 111 is a pad or a solder ball or a bump or a metal wire. In one embodiment of the present invention, the second redistribution layer 108 may include an under-bump metallization structure, and the material of the under-bump metallization structure may be Ti / Cu or Ti / Cu / Ni / Cu or Ti / Cu / Ni / Au, etc. In one embodiment of the present invention, the detector chip module 110 may be electrically connected to the first redistribution layer 101 at the under-bump metallization structure.

[0065] The radiation-resistant packaging structure provided by the present invention has a protective cover disposed on the processor chip module and a protective layer disposed under the processor chip module, so as to form a three-dimensional protection for the processor chip module, which can effectively reduce the radiation of high-energy X-rays from the detector direction to the processor chip module, reduce the noise interference of the outside world to the processor chip module, and improve the service life of the packaging structure. The radiation-resistant packaging structure provided by the present invention can be widely used in the fields of high-energy X-ray detection, gamma ray detection, etc.

[0066] Although various embodiments of the present invention are described above, it should be understood that they are presented as examples only and not as limitations. It is obvious to those skilled in the relevant art that various combinations, modifications and changes can be made thereto without departing from the spirit and scope of the present invention. Therefore, the breadth and scope of the present invention disclosed herein should not be limited by the exemplary embodiments disclosed above, but should only be defined according to the attached claims and their equivalents.

Claims

1. A radiation-resistant packaging structure, characterized in that: include: A first redistribution layer; A protection layer, the protection layer is arranged below the first redistribution layer; A metal column, wherein the metal column is arranged on the first redistribution layer and the metal column is electrically connected to the first redistribution layer; A processor chip module, wherein the processor chip module is arranged on the first redistribution layer, and the processor chip module is electrically connected to the first redistribution layer through a first connection structure; A protective cover, wherein the protective cover covers the processor chip module; A plastic sealing layer, sealing and covering the metal pillar, the processor chip module and the protective cover; A second redistribution layer, wherein the second redistribution layer is arranged on the plastic packaging layer, and the second redistribution layer is electrically connected to the metal column; A detector chip module, wherein the detector chip module is arranged on the second redistribution layer, and the detector chip module is electrically connected to the second redistribution layer via a second connection structure; A solder ball is arranged below the first redistribution layer and is electrically connected to the first redistribution layer.

2. The radiation-resistant packaging structure according to claim 1, characterized in that: The first connection structure is a solder pad, a solder ball, a bump, or a metal wire; and / or The second connection structure is a solder pad, a solder ball, a bump, or a metal wire.

3. A method for manufacturing a radiation-resistant packaging structure according to any one of claims 1 to 2, characterized in that: The steps include: Manufacturing a protective layer and a first redistribution layer, and manufacturing a metal column on the first redistribution layer; Laminating a processor chip module and a protective cover on the first redistribution layer; Making a plastic sealing layer to seal and cover the metal pillar, the processor chip module and the protective cover; Thinning the plastic packaging layer to expose the top surface of the metal column and fabricating a second redistribution layer; forming solder balls below the first redistribution layer; The detector chip module is bonded on the second redistribution layer to form a radiation-resistant packaging structure.

4. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The first redistribution layer is fabricated on a carrier wafer; Before making solder balls, remove the carrier wafer; The carrier is a glass sheet, a silicon sheet, a sapphire sheet or a metal sheet.

5. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The material of the protective layer includes one or more of a polymer or a lead-tungsten material or an aluminum-lead microcomposite material or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth or barium or gadolinium or tungsten or antimony or tin; and / or The material of the protective cover includes one or more of a polymer, a lead-tungsten material, an aluminum-lead micro-composite material, or a lead-free polymer material; wherein the lead-tungsten material includes one or more of lead or tungsten, and the lead-free polymer material includes one or more of bismuth, barium, gadolinium, tungsten, antimony, or tin.

6. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: A plurality of small holes are arranged on the bottom or side wall of the protective cover to facilitate the plastic packaging material to flow into the protective cover.

7. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The first redistribution layer includes a plurality of dielectric layers and a plurality of metal layers; and / or The second redistribution layer includes a plurality of dielectric layers and a plurality of metal layers.

8. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The material of the metal column includes one or more of copper, tungsten, silver, aluminum or titanium.

9. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The processor chip module is attached to the first redistribution layer by face-up or flip-up mounting; The processor chip module includes a plurality of identical chips, or a plurality of chips of the same type, or a plurality of chips of different types.

10. The method for manufacturing a radiation-resistant packaging structure according to claim 3, characterized in that: The plastic encapsulation is injection molding; and / or The material of the plastic sealing layer is epoxy resin.

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