A magnetic field detection device

Abstract

The present application relates to the field of magnetic sensing technology, and in particular to a magnetic field detection device, comprising a first Hall pair, comprising a pair of first magnetic sensitive elements spaced apart along a first direction axis; a second Hall pair, comprising a pair of second magnetic sensitive elements spaced apart along a second direction axis; a first magnetic focusing layer, stacked on the first Hall pair and the second Hall pair, the orthographic projection of the first magnetic focusing layer on the Hall plane at least partially covering the first magnetic sensitive element and the second magnetic sensitive element; a third magnetic sensitive element, spaced apart along the first direction axis on one side of the first Hall pair, or spaced apart along the second direction axis on one side of the second Hall pair; a second magnetic focusing layer, stacked on the third magnetic sensitive element, used to provide an additional magnetic field for the third magnetic sensitive element, the additional magnetic field can offset the component of the spillover magnetic field in the third direction of the first magnetic focusing layer acting on the sensitive area of ​​the third magnetic sensitive element. The present application can reduce crosstalk between axes and improve the accuracy of three-axis magnetic field detection.

Description

Technical Field

[0001] The present application relates to the field of magnetic sensing technology, and in particular to a magnetic field detection device. Background Art

[0002] The demand for chips that can be sensitive to magnetic fields in all directions at the same time has promoted the development of three-axis magnetic field detection technology, which has broad application prospects in the fields of mobile phone navigation, drone attitude measurement and control, etc. The existing three-axis magnetic field detection technology usually integrates the magnetic sensitive elements of the XYZ axes. This discrete integration technology has high cost and low reliability, and has gradually fallen behind. Another related technology sets a magnetic concentrating layer on the magnetic sensitive element to twist the direction of the previously undetectable parallel magnetic field through the edge area. Although this method can realize three-axis magnetic field detection, the magnetic concentrating layer will introduce a large area of ​​magnetic field distortion, which will cause strong interference to the Z-axis magnetic sensitive element in the application scenario where the Z-axis magnetic field needs to be directly obtained, resulting in a decrease in the suppression ratio of the inter-axis signal, and the inability to effectively achieve inter-axis isolation. The signal crosstalk is obvious and the detection accuracy is poor. Summary of the invention

[0003] In view of the above problems in the prior art, the present application provides a magnetic field detection device, and the specific technical solution is as follows:

[0004] In one aspect, the present application provides a magnetic field detection device, the magnetic field detection device comprising:

[0005] A first Hall pair, comprising a pair of first magnetic sensitive elements spaced apart along a first direction axis;

[0006] A second Hall pair, comprising a pair of second magnetic sensitive elements spaced apart along a second direction axis, the first direction axis being orthogonal to the second direction axis, the first Hall pair and the second Hall pair being used to detect a horizontal magnetic field parallel to the Hall plane; a first magnetic focusing layer, stacked on the first Hall pair and the second Hall pair, the orthographic projection of the first magnetic focusing layer on the Hall plane at least partially covering the first magnetic sensitive element and the second magnetic sensitive element;

[0007] A third magnetic sensitive element is arranged at one side of the first Hall pair along the first direction axis, or is arranged at one side of the second Hall pair along the second direction axis; the third magnetic sensitive element is used to detect a magnetic field in a third direction, and the third direction is orthogonal to the Hall plane;

[0008] The second magnetic concentrating layer is laminated on the third magnetic sensitive element and is used to provide an additional magnetic field for the third magnetic sensitive element. The additional magnetic field can offset the component of the overflow magnetic field of the first magnetic concentrating layer acting on the sensitive area of ​​the third magnetic sensitive element in the third direction.

[0009] In some embodiments, the first Hall pair is used to differentially detect a magnetic field in a first direction, and the second Hall pair is used to differentially detect a magnetic field in a second direction.

[0010] In some embodiments, if the third magnetic sensitive element is disposed on one side of the first Hall pair along the first direction axis, the sensitive area of ​​the third magnetic sensitive element meets a preset isolation degree for the component of the spillover magnetic field in the second direction.

[0011] In some embodiments, if the third magnetic sensitive element is disposed at one side of the second Hall pair along the second direction axis, the sensitive area of ​​the third magnetic sensitive element meets a preset isolation degree for the component of the spillover magnetic field in the first direction.

[0012] In some embodiments, the center of the orthographic projection of the first magnetic focusing layer on the Hall plane coincides with the center of a preset pattern.

[0013] In some embodiments, the orthographic projection of the first magnetic focusing layer on the Hall plane is symmetrical about the first direction axis and / or the second direction axis.

[0014] In some embodiments, the orthographic projection of the second magnetic focusing layer on the Hall plane is symmetric with respect to the first direction and / or the second direction.

[0015] In some embodiments, if the third magnetic sensitive element is arranged on one side of the first Hall pair along the first direction axis, and the sensitive area of ​​the third magnetic sensitive element is symmetrical about the first direction axis, the orthographic projection of the first magnetic focusing layer on the Hall plane is symmetrical about the first direction axis, and the orthographic projection of the second magnetic focusing layer on the Hall plane is symmetrical about the first direction axis.

[0016] In some embodiments, if the third magnetic sensitive element is arranged on one side of the second Hall pair along the second direction axis, and the sensitive area of ​​the third magnetic sensitive element is symmetrical about the second direction axis, the orthographic projection of the first magnetic focusing layer on the Hall plane is symmetrical about the second direction axis, and the orthographic projection of the second magnetic focusing layer on the Hall plane is symmetrical about the second direction axis.

[0017] In some embodiments, the second magnetic focusing layer is biased on the third magnetic sensitive element and offset toward a side of the third magnetic sensitive element away from the first magnetic focusing layer.

[0018] In some embodiments, the two first magnetic sensitive elements in the first Hall pair are arranged symmetrically about the second direction.

[0019] In some embodiments, the two second magnetic sensitive elements in the second Hall pair are arranged symmetrically about the first direction;

[0020] An intersection of the first direction axis and the second direction axis is located in a middle of a preset pattern formed by the first Hall pair and the second Hall pair.

[0021] In some embodiments, the intersection of the first direction axis and the second direction axis coincides with the center of the preset graphic.

[0022] In some embodiments, the first Hall pair and the second Hall pair are arranged rotationally symmetrically.

[0023] In some embodiments, the sensitive region of the first magnetic sensitive element, the sensitive region of the second magnetic sensitive element, and the sensitive region of the third magnetic sensitive element are arranged in the same plane.

[0024] In some embodiments, the first Hall pair and the second Hall pair are differentially connected in parallel.

[0025] In some embodiments, if the third magnetic sensitive element is disposed at one side of the first Hall pair along the first direction axis, the third magnetic sensitive element is connected in a colinear manner with a working positive electrode or a working negative electrode of the adjacent first magnetic sensitive element.

[0026] In some embodiments, if the third magnetic sensitive element is disposed at one side of the second Hall pair along the second direction axis, the third magnetic sensitive element is connected in a colinear manner with a working positive electrode or a working negative electrode of an adjacent second magnetic sensitive element.

[0027] In some embodiments, the sensitive area of ​​the first magnetic sensitive element is a symmetrical structure with respect to the first direction and / or the second direction.

[0028] In some embodiments, the sensitive area of ​​the second magnetic sensitive element is a structure symmetrical with respect to the first direction and / or the second direction.

[0029] In some embodiments, the sensitive area of ​​the third magnetic sensitive element is a symmetrical structure with respect to the first direction and / or the second direction.

[0030] In some embodiments, the sensitive area of ​​the first magnetic sensitive element is a structure rotationally symmetric about the first direction and the second direction.

[0031] In some embodiments, the sensitive area of ​​the second magnetic sensitive element is a structure rotationally symmetric about the first square axis and the second direction.

[0032] The sensitive area of ​​the third magnetic sensitive element is a rotationally symmetrical structure about the first direction axis or the second direction axis.

[0033] In some embodiments, if the third magnetic sensitive element is disposed at one side of the first Hall pair along the first direction axis, the sensitive area of ​​the third magnetic sensitive element is symmetrical about the first direction axis.

[0034] In some embodiments, if the third magnetic sensitive element is disposed at one side of the second Hall pair along the second direction axis, the sensitive area of ​​the third magnetic sensitive element is symmetrical about the second direction axis.

[0035] In some embodiments, the orthographic projection of the first magnetic concentrating layer on the Hall plane covers the sensing center of the first magnetic sensitive element and the sensing center of the second magnetic sensitive element.

[0036] In some embodiments, the outer edge of the first magnetic focusing layer on the positive projection of the Hall plane exceeds the length of the sensitive area of ​​the first magnetic sensitive element in the first direction and does not exceed a first preset proportion of the length of the sensitive area of ​​the first magnetic sensitive element in the first direction; the first preset proportion is 1 / 4-2 / 5.

[0037] In some embodiments, the outer edge of the first magnetic focusing layer on the positive projection of the Hall plane exceeds the length of the sensitive area of ​​the second magnetic sensitive element in the second direction, and does not exceed a second preset proportion of the length of the sensitive area of ​​the second magnetic sensitive element in the second direction; the second preset proportion is 1 / 4-2 / 5.

[0038] In some embodiments, the thickness of the first magnetic concentrating layer is 5-500 μm.

[0039] In some embodiments, the thickness of the second magnetic concentrating layer is 5-500 μm.

[0040] In some embodiments, the first magnetic concentrating layer is a stacked layer formed on the first Hall pair and the second Hall pair based on a photolithography process or a mounting process.

[0041] In some embodiments, the second magnetic concentrating layer is a stacked layer formed on the third magnetic sensitive element based on a photolithography process or a mounting process.

[0042] In some embodiments, the magnetic field component gain corresponding to the Hall voltage signal of the first Hall pair is consistent with the magnetic field component gain corresponding to the Hall voltage signal of the second Hall pair.

[0043] In some embodiments, the orthographic projection of the first magnetic focusing layer on the Hall plane is rotationally symmetric about the first direction axis and / or the second direction axis. In some embodiments, the orthographic projection of the second magnetic focusing layer on the Hall plane is rotationally symmetric about the first direction and the second direction.

[0044] In some embodiments, the magnetic field component gain corresponding to the Hall voltage signal of the first Hall pair, the magnetic field component gain corresponding to the Hall voltage signal of the second Hall pair, and the magnetic field component gain corresponding to the Hall voltage signal in the third direction are consistent.

[0045] On the other hand, the present application provides a magnetic field detection chip, which includes the magnetic field detection device as described above.

[0046] On the other hand, the present application provides an integrated circuit, which includes the above-mentioned magnetic field detection device.

[0047] On the other hand, the present application provides an electronic device, which includes the magnetic field detection device as described above.

[0048] Based on the above technical solution, this application has the following beneficial effects:

[0049] The technical solution of the present application sets up a first Hall pair arranged at intervals along the first direction axis and a second Hall pair arranged at intervals along the second direction axis, and sets a first magnetic focusing layer on the first Hall pair and the second Hall pair, so that it at least partially covers the first magnetic sensitive element and the second magnetic sensitive element, so as to realize parallel magnetic field twisting of the edge, so as to perform horizontal magnetic field detection parallel to the Hall plane, and a third magnetic sensitive element is also arranged on one side of the first Hall pair and / or the second Hall pair for detecting the magnetic field in the third direction, and a second magnetic focusing layer is arranged thereon, which can offset the overflow magnetic field of the first magnetic focusing layer, so as to realize high isolation of signal detection, reduce signal crosstalk between axes, and improve the precision and accuracy of three-axis magnetic field detection. BRIEF DESCRIPTION OF THE DRAWINGS

[0050] In order to more clearly illustrate the technical solution of the present application, the following is a brief introduction to the drawings required for use in the embodiments or prior art descriptions. Obviously, the drawings described below are only some embodiments of the present application, and for ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0051] Figure 1 : A top view of the structure of a magnetic field detection device provided in an embodiment of the present application;

[0052] Figure 2 : A top view of the structure of another magnetic field detection device provided in an embodiment of the present application;

[0053] Figure 3 : A top view of the structure of a magnetic field detection chip provided in an embodiment of the present application;

[0054] Figure 4 : A top view of the structure of another magnetic field detection device provided in an embodiment of the present application;

[0055] Figure numerals: 101 - first magnetic sensitive element, 102 - second magnetic sensitive element, 103 - first magnetic focusing layer, 104 - third magnetic sensitive element, 105 - electrode structure, 106 - second magnetic focusing layer, 107 - pad. DETAILED DESCRIPTION

[0056] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by ordinary technicians in this field without making creative work are within the scope of protection of this application.

[0057] It should be noted that in the description of the present application, for the following defined terms, unless a different definition is given in the claims or elsewhere in this specification, these definitions should be applied. All numerical values, whether or not explicitly indicated, are defined herein as being modified by the term "about". The term "about" generally refers to a numerical range that a person of ordinary skill in the art would consider to be equivalent to the stated value to produce substantially the same properties, functions, results, etc. A numerical range indicated by a low value and a high value is defined to include all numerical values ​​included in the numerical range and all subranges included in the numerical range.

[0058] It should be noted that, in the description of the present application, the terms "first", "second", etc. are used to distinguish similar objects, and are not necessarily used to describe a specific order or sequence. It should be understood that the data used in this way can be interchangeable where appropriate, so that the embodiments of the present application described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions.

[0059] It should be noted that, in the description of the present application, the meaning of the terms "on", "above", "above", and "above" should be interpreted in the broadest sense, meaning that the description containing these terms is interpreted as "the component can be set on another component in direct contact, or there can be an intermediate component or layer between the components". In addition, for the convenience of description, the present application may also use spatial relative terms such as "under", "below", "under", "on", "above", "above", "lower", "upper", etc. to describe the relationship between an element or component and another element or component shown in the drawings. In addition to the orientations described in the figures, the spatially relative terms are also intended to cover different orientations of the device in use or operation. The device can be oriented in other ways (rotated 90° or in other orientations), and the spatially relative descriptors used in the present application can be interpreted accordingly.

[0060] The term "layer" as used in this application refers to a portion of a material that includes an area with a certain thickness. A layer can extend over the entire underlying or superstructure, or can extend over a local area of ​​the underlying or superstructure. In addition, a layer can be an area of ​​a homogeneous or inhomogeneous continuous structure, whose thickness is less than the thickness of the continuous structure. For example, a layer can be located between the top and bottom surfaces of the continuous structure or between any pair of horizontal planes therebetween. A layer can extend horizontally, vertically and / or along a tapered surface. A layer can include multiple layers.

[0061] It should be understood that the definitions such as “consistent”, “vertical”, and “orthogonal” used in this application refer to basic consistency or basic perpendicularity that satisfies process errors, and do not refer to absolute consistency or absolute perpendicularity in the physical sense.

[0062] It should be understood that the “plane”, “Hall plane”, such as “first plane”, “second plane”, etc. used in this application refer to the XY plane of magnetic field detection, corresponding to the XY plane of Hall detection of the magnetic field detection device, “horizontal magnetic field parallel to the Hall plane” refers to the magnetic field in the direction parallel to the XY plane, “first direction” and “second direction” refer to the X direction or Y direction, and “thickness direction”, “longitudinal direction” or “third direction” refers to the Z direction relative to the XY plane.

[0063] The following combination Figure 1-4 Introducing the magnetic field detection device of the present application. It is understandable that the magnetic field detection device in the drawings is only a technical solution of a specific embodiment of the present application, and the magnetic field detection device of the present application may include fewer or more structural features, and is not limited to the device structure described in the drawings.

[0064] refer to Figure 1-4The magnetic field detection device includes a first Hall pair and a second Hall pair. The first Hall pair includes a pair of first magnetic sensitive elements 101 spaced apart along a first direction axis. The second Hall pair includes a pair of second magnetic sensitive elements 102 spaced apart along a second direction axis. The first direction axis is orthogonal to the second direction axis. The first Hall pair and the second Hall pair are used to detect a horizontal magnetic field parallel to the Hall plane.

[0065] Specifically, the Hall plane refers to a plane where the plurality of first magnetic sensitive elements 101 perform planar magnetic field detection. The first direction axis is an axis set along a first direction in the Hall plane, such as the X direction in the Hall plane, and the second direction axis is an axis set along a second direction in the Hall plane, such as the Y direction in the Hall plane.

[0066] Specifically, the first magnetic sensitive element 101 and the second magnetic sensitive element 102 are elements capable of realizing magnetic field detection based on the Hall effect. The first Hall pair and the second Hall pair form a planar Hall differential detection component. The first Hall pair can generate a differential signal to characterize a magnetic field component in a first direction, such as an X-axis magnetic field component, and the second Hall pair can generate a differential signal to characterize a magnetic field component in a second direction, such as a Y-axis magnetic field component.

[0067] In a possible implementation, the two first magnetic sensitive elements 101 in the first Hall pair are arranged symmetrically about the second direction axis; the two second magnetic sensitive elements 102 in the second Hall pair are arranged symmetrically about the first direction axis; the intersection of the first direction axis and the second direction axis is located in the middle of the preset figure formed by the first Hall pair and the second Hall pair. Accordingly, the preset figure is a structure symmetrical about the first direction axis and the second direction axis. Preferably, the intersection of the first direction axis and the second direction axis coincides with the center of the preset figure. In this way, the preparation of the first magnetic sensitive element 101 and the magnetic field detection calculation are simplified. In this way, the calibration and detection complexity of the plane magnetic field component detection is reduced by the symmetrical setting, and the accuracy of the magnetic field detection is improved. In a preferred implementation, the intersection of the first direction axis and the second direction axis is located at the center of the preset figure, that is, it coincides with the midpoint of the interval between the two first magnetic sensitive elements 101 in the first Hall pair and the midpoint of the interval between the two first magnetic sensitive elements 101 in the second Hall pair. The coincidence here refers to the basic coincidence that meets the error requirements, not the absolute coincidence. By setting a first Hall pair and a second Hall pair that are symmetrical and have overlapping centers, accurate detection of magnetic fields in the first direction and the second direction can be achieved, and signal calibration and output calculation are simpler.

[0068] Specifically, the preset pattern refers to a pattern formed by arranging the first magnetic sensitive elements 101 and the second magnetic sensitive elements 102, and there is a reserved space in the middle of the preset pattern. Preferably, the preset pattern is a cross, the first magnetic sensitive elements 101 in the first direction and the second magnetic sensitive elements 102 in the second direction are arranged in a cross, and the reserved space is located in the middle area of ​​the cross.

[0069] In a possible implementation, the first Hall pair and the second Hall pair are rotationally symmetrically arranged, that is, each first magnetic sensitive element 101 on the first direction axis is rotationally symmetrically arranged with each second magnetic sensitive element 102 on the second direction axis, and the first magnetic sensitive element 101 on the second direction axis can overlap with the corresponding first magnetic sensitive element 101 on the first direction axis after rotating 90°. Accordingly, the preset pattern is a rotationally symmetrical structure. In this way, the size and structural setting requirements of the first magnetic focusing layer 103 are further simplified, and the calibration and calculation complexity of the planar magnetic field detection are reduced.

[0070] In a possible implementation, when there are two or more first Hall pairs, each first magnetic sensitive element 101 is arranged along the first direction axis, and each first Hall pair is symmetrical about the second direction axis. Each first Hall pair serves as a backup for each other, and each first Hall pair on the first direction axis outputs its own Hall voltage signal, which can realize result verification, detection test, etc. of any first Hall pair, thereby improving the accuracy of first direction magnetic field detection.

[0071] In a possible implementation, when there are two or more second Hall pairs, each second magnetic sensitive element 102 is arranged along the second direction axis, and each second Hall pair is symmetrical about the first direction axis. Each second Hall pair serves as a backup for each other, and each second Hall pair on the second direction axis outputs its own Hall voltage signal, which can realize result verification, detection test, etc. of any second Hall pair, thereby improving the accuracy of second direction magnetic field detection.

[0072] In a possible implementation, the structures and materials of the sensitive regions of the two first magnetic sensitive elements 101 in the first Hall pair are consistent, and the structures and materials of the sensitive regions of the two second magnetic sensitive elements 102 in the second Hall pair are consistent. In a preferred implementation, the structures and materials of the sensitive regions of the first magnetic sensitive elements 101 on the first direction axis are consistent, and the structures and materials of the sensitive regions of the second magnetic sensitive elements 102 on the second direction axis are consistent. More preferably, the structures and materials of the sensitive regions of the first magnetic sensitive element 101 and the second magnetic sensitive element 102 are consistent. The sensitive region refers to the effective device region in the magnetic sensitive element for responding to the magnetic field, such as Figure 2 and Figure 3 The blue cross area is shown. Through the same structure and material settings, the Hall coefficients of the magnetic sensitive elements are consistent, which is convenient for magnetic field detection calibration and calculation.

[0073] It should be noted that the various types of symmetrical designs of the first magnetic sensitive element 101 and the second magnetic sensitive element 102 about the first direction axis and the second direction axis are preferably symmetrical designs of the sensitive areas of the first magnetic sensitive element 101 and the second magnetic sensitive element 102, such as the sensitive areas of the two first magnetic sensitive elements 101 of the first Hall pair are symmetrical about the second direction.

[0074] In a preferred embodiment, the first magnetic sensitive element 101 and the second magnetic sensitive element 102 have the same structure and material, and the arrangement position and spacing of the two first magnetic sensitive elements 101 of the first Hall pair are consistent with the arrangement position and spacing of the two second magnetic sensitive elements 102 in the second Hall pair corresponding to the first Hall pair. The second Hall pair corresponding to the first Hall pair refers to a Hall pair located on the same symmetrical ring centered at the intersection of the first direction axis and the second direction axis. In this way, the preparation process of the first magnetic sensitive element 101 and the second magnetic sensitive element 102 and the magnetic field detection calculation are simplified.

[0075] In one embodiment, reference Figure 1 , the magnetic field detection device includes Hall A and Hall B arranged from left to right along the X axis, and Hall C and Hall D arranged from top to bottom along the Y axis. The sensitive areas of Hall A and Hall B are arranged symmetrically along the X direction to form a first Hall pair, and the sensitive areas of Hall C and Hall D are arranged symmetrically along the Y direction to form a second Hall pair, arranged in a cross shape, respectively detecting the magnetic field in the X and Y directions, and the X direction is orthogonal to the Y direction. The center point O of the cross is the symmetry center of Hall A and Hall B, and the symmetry center of Hall C and Hall D. The structures of each first magnetic sensitive element 101 and each second magnetic sensitive element 102 are consistent. It can be understood that, taking the first direction as an example, if the first direction axis also includes another first Hall pair formed by Hall E and Hall F, the sensitive areas of Hall E and Hall F are symmetrical about the second direction axis, and the symmetry center is point O. Hall E can be located on the side of Hall A away from point O, and Hall F can be located on the side of Hall B away from point O.

[0076] In a possible implementation, the first Hall pair is used to differentially detect a magnetic field in a first direction, and the second Hall pair is used to differentially detect a magnetic field in a second direction. The first Hall pair generates a Hall voltage signal in response to the magnetic field to calculate the magnetic field component in the first direction, and the second Hall pair generates a Hall voltage signal in response to the magnetic field to calculate the magnetic field component in the second direction.

[0077] In a possible implementation manner, the first Hall pair and the second Hall pair are differentially connected in parallel, so that not only the interference of the Hall voltage signals in the first direction and the second direction is reduced, but also the zero-bias and zero-drift effect of the signal is reduced.

[0078] In one embodiment, the magnetic field detection device further includes a pad 107, and the magnetic sensitive element further includes an electrode structure 105, specifically including a working positive electrode, a working negative electrode and a signal electrode, Figure 2 , Hall A and Hall B, as well as Hall C and Hall D are all differentially connected in parallel, the working negative electrodes of Hall A and Hall B are connected to the same pad 107 (marked by a green frame), the working negative electrodes of Hall C and Hall D are connected to the same pad 107, and the working positive electrode of Hall AD is connected to the same pad 107 (marked by a black frame). The other pads 107 in the figure are respectively connected to the signal electrodes of Hall AD to output Hall voltage signals VAB and VCD.

[0079] In a possible implementation manner, the sensitive area of ​​the first magnetic sensitive element is a structure symmetrical with respect to the first direction and / or the second direction.

[0080] In a possible implementation manner, the sensitive area of ​​the second magnetic sensitive element 102 is a structure symmetrical with respect to the second direction and / or the first direction.

[0081] Specifically, the sensitive area refers to a device area in a magnetic sensitive element that is sensitive to a magnetic field and can form a magnetic induction signal. By setting the sensitive area of ​​the first magnetic sensitive element 101 to be symmetrical about the first direction and / or symmetrical about the second direction, and setting the sensitive area of ​​the second magnetic sensitive element 102 to be symmetrical about the first direction and / or symmetrical about the second direction, the magnetic field intensity induced by the sensitive area when detecting the magnetic field component in the first direction or the second direction is symmetrical and consistent, thereby improving the detection accuracy.

[0082] In a preferred embodiment, the sensitive area of ​​the first magnetic sensitive element is a rotationally symmetric structure with respect to the first direction and the second direction. The rotation angle of the rotational symmetry may be 90°.

[0083] In a preferred embodiment, the sensitive area of ​​the second magnetic sensitive element is a rotationally symmetric structure with respect to the first direction and the second direction. The rotation angle of the rotational symmetry may be 90°.

[0084] More preferably, the sensitive area of ​​the first magnetic sensitive element 101 can simultaneously satisfy the symmetry about the first direction and / or the second direction, and the rotational symmetry in the first direction and the second direction, that is, it is completely symmetrical and consistent in the first direction and the second direction. More preferably, the sensitive area of ​​the second magnetic sensitive element 102 can simultaneously satisfy the symmetry about the second direction and / or the first direction, and the rotational symmetry in the first direction and the second direction, that is, it is completely symmetrical and consistent in the first direction and the second direction. Exemplarily, the sensitive areas of the first magnetic sensitive element 101 and the second magnetic sensitive element 102 can be as follows: Figure 1 The cross shape in the figure can also be a circle or other shapes that satisfy the above symmetry conditions, which are not enumerated here.

[0085] The magnetic field detection device also includes a third magnetic sensitive element 104, which is arranged on one side of the first Hall pair along the first direction axis, or is arranged on one side of the second Hall pair along the second direction axis; the third magnetic sensitive element 104 is used to detect the magnetic field in a third direction, which is orthogonal to the Hall plane.

[0086] Specifically, the third direction may be a Z direction perpendicular to the XY plane, and the third magnetic sensitive element 104 is arranged at one side of the preset pattern. For example, referring to Figure 1 The third magnetic sensitive element 104 is disposed on the first direction axis and located on one side of the first Hall pair.

[0087] It can be understood that the third magnetic sensitive element 104 may be disposed only on the first direction axis or the second direction axis, or may be disposed on both the first direction axis and the second direction axis.

[0088] In a possible implementation, the sensitive areas of the first magnetic sensitive element, the sensitive areas of the second magnetic sensitive element 102, and the sensitive areas of the third magnetic sensitive element 104 are coplanarly arranged, and the coplanar first magnetic sensitive element 101, the second magnetic sensitive element 102, and the third magnetic sensitive element 104 form a planar 3D magnetic field detection component. When the third magnetic sensitive element 104 is arranged on both the first direction axis and the second direction axis, each third magnetic sensitive element 104 outputs a Hall detection signal to serve as a result verification and detection test of the third direction magnetic field detection, thereby improving the accuracy of the third direction magnetic field detection.

[0089] In a possible implementation, the sensitive area of ​​the third magnetic sensitive element is a structure that is symmetrical about the first direction and / or symmetrical about the second direction. In a preferred implementation, the sensitive area of ​​the third magnetic sensitive element is further configured to be a structure that is rotationally symmetrical about the first direction and the second direction, and the rotational symmetry angle may be 90°. For example, referring to Figure 1 , the sensitive area of ​​the third magnetic sensitive element 104 may be in a cross shape.

[0090] In a preferred embodiment, if the third magnetic sensitive element is arranged at one side of the first Hall pair along the first direction axis, the sensitive area of ​​the third magnetic sensitive element 104 is symmetrical about the first direction axis; for example, referring to Figure 1 The third magnetic sensitive element 104 is disposed on the X-axis and is located on the side of the Hall A and the Hall B away from the center O. The sensitive area of ​​the third magnetic sensitive element 104 is symmetrical about the X-axis.

[0091] In a preferred embodiment, if the third magnetic sensitive element 104 is disposed at one side of the second Hall pair along the second direction axis, the sensitive area of ​​the third magnetic sensitive element 104 is symmetrical about the second direction axis.

[0092] In this way, the sensitive area of ​​the third magnetic sensitive element 104 is set to be symmetrical about the direction axis in which it is located, which facilitates the symmetry of the interfering magnetic field introduced by the spillover magnetic field of the first magnetic concentrating layer 103, simplifies the design complexity of the second magnetic concentrating layer 106, improves the three-axis detection isolation performance and simplifies the device process.

[0093] In a possible implementation, if the third magnetic sensitive element is disposed at one side of the first Hall pair along the first direction axis, the third magnetic sensitive element 104 is connected in a colinear manner with a working positive electrode or a working negative electrode of an adjacent first magnetic sensitive element 101 .

[0094] In a possible implementation, if the third magnetic sensitive element is disposed at one side of the second Hall pair along the second direction axis, the third magnetic sensitive element 104 is connected in a colinear manner with a working positive electrode or a working negative electrode of an adjacent second magnetic sensitive element 102 .

[0095] In this way, the positive electrode or the negative electrode of the third magnetic sensitive element 104 is placed in line with the electrode of the adjacent magnetic sensitive element, thereby simplifying the IC circuit wiring.

[0096] For example, reference Figure 2 , the third magnetic sensitive element 104 (Hall Z) is connected to the working positive electrode of the adjacent first magnetic sensitive element 101 (Hall A), and is connected to the same pad 107 together with each working positive electrode in Hall AD, without the need to separately wire the working positive electrode of the third magnetic sensitive element 104 to the pad 107. The working negative electrode of the third magnetic sensitive element 104 is connected to the pad 107 for connecting to the negative electrode, and a corresponding pad 107 is provided to connect the signal electrode of the third magnetic sensitive element 104. In a preferred embodiment, the pads 107 of the first Hall pair, the second Hall pair, and the third magnetic sensitive element 104 are respectively provided on opposite sides of a preset pattern, presenting a left-right design in a top view (reference Figure 2 ) or up and down design to facilitate wiring layout; the working electrode of the third magnetic sensitive element 104 can be directly connected to the peripheral jumper, and the signal electrode can be wired to the circuit board. If there are incompatibility and interference problems in the wiring direction, it can be set to jumper to the adapter board, etc., which will not be described in detail here.

[0097] In one embodiment, reference Figure 2 The figure shows the electrode layout of the magnetic field detection device. The pad 107 with a black wireframe in the figure is connected to the working positive electrode, the pad 107 with a green wireframe is connected to the working negative electrode (or working ground electrode), and the pad 107 without an outer frame is connected to the signal electrode of the magnetic sensitive element. It can be understood that the positive and negative of the working electrode can be reversed, and the corresponding signal will be inverted, which will not affect the measurement. Figure 2The working positive electrodes of the first Hall pair, the second Hall pair and the third magnetic sensitive element 104 are connected to a common electrode, the working negative electrodes of the first Hall pair are connected to a pad 107, the working negative electrodes of the second Hall pair are connected to a pad 107, and the first Hall pair and the second Hall pair are both differentially arranged in parallel; the working negative electrode of the third magnetic sensitive element 104 is connected to a pad 107.

[0098] The magnetic field detection device further includes a first magnetic focusing layer 103 which is stacked on the first Hall pair and the second Hall pair. The orthographic projection of the first magnetic focusing layer 103 on the Hall plane at least partially covers the first magnetic sensitive element 101 and the second magnetic sensitive element 102 .

[0099] This application adopts the solution of placing the third magnetic sensitive element 104 aside, refer to Figure 3 The connecting pads 107 of the electrodes can be arranged symmetrically, such as being arranged on both sides of the preset pattern, and the pads 107 on one side are located between the third magnetic sensitive element 104 and the preset pattern, and the device IC circuit layout is reasonable.

[0100] Specifically, the first magnetic focusing layer 103 is stacked on each of the first magnetic sensitive elements 101 and the second magnetic sensitive elements 102, covering at least a portion of the first magnetic sensitive elements 101 and the second magnetic sensitive elements 102, so as to achieve a magnetic focusing effect of the planar magnetic field, improve the magnetic field detection gain in the first direction and the second direction, and thereby improve the sensitivity of the first direction magnetic field component detection of the first Hall pair and the second direction magnetic field component detection of the second Hall pair, as well as improve the sensitivity of the planar magnetic field detection and the output signal quality.

[0101] In a possible implementation manner, the center of the orthographic projection of the first magnetic focusing layer on the Hall plane coincides with the center of the preset pattern.

[0102] In a possible implementation manner, the orthographic projection of the first magnetic focusing layer 103 on the Hall plane is symmetrical about the first direction axis and / or the second direction axis.

[0103] In a possible implementation manner, the orthographic projection of the first magnetic focusing layer 103 on the Hall plane is rotationally symmetric about the first direction axis and / or the second direction axis. The rotational symmetry angle may be 90°.

[0104] Exemplarily, the shape of the first magnetic concentrating layer 103103 can be a rectangle, a circle, an ellipse or a regular even polygon, etc. By symmetrically arranging the first magnetic concentrating layer 103 above the first Hall pair and the second Hall pair for planar magnetic field detection, combining the two first magnetic sensitive elements 101 of the first Hall pair being axially symmetrically arranged about the second direction, and the two second magnetic sensitive elements 102 of the second Hall pair being axially symmetrically arranged about the first direction, that is, the planar magnetic field detection component is overall symmetrical and consistent in the X and Y directions, so that the first magnetic concentrating layer 103 has a consistent magnetic concentrating effect on the two first magnetic sensitive elements 101 of the first Hall pair, a consistent magnetic concentrating effect on the two second magnetic sensitive elements 102 of the second Hall pair, and an axially symmetrical effect on the third magnetic sensitive element 104, even if there is a certain amount of crosstalk, it is easy to calibrate and remove. Furthermore, if the first magnetic focusing layer 103 is further set to a rotationally symmetrical pattern, and the first Hall pair and the second Hall pair are rotationally symmetrical (that is, they are still symmetrical after rotating 90°, and the X and Y directions are completely symmetrical), not only will the gain of the differential signal of the planar magnetic field detection be consistent with the magnetic field, but the calculation of the magnetic field detection results is further simplified and division operations can be avoided.

[0105] In a possible implementation, the first magnetic concentrating layer is a stack formed on the first Hall pair and the second Hall pair based on a photolithography process or a mounting process, preferably a photolithography process, to achieve sub-micron level alignment accuracy, improve the positioning accuracy of the first magnetic concentrating layer 103, and make the crosstalk introduced by the alignment error negligible.

[0106] In a possible implementation, the orthographic projection of the first magnetic concentrating layer on the Hall plane covers the inductive center of the first magnetic sensitive element 101 and the inductive center of the second magnetic sensitive element 102; the outer edge of the orthographic projection of the first magnetic concentrating layer 103 on the Hall plane exceeds the length of the sensitive area of ​​the first magnetic sensitive element 101 in the first direction, and does not exceed the first preset ratio of the length of the sensitive area of ​​the first magnetic sensitive element 101 in the first direction; the outer edge of the orthographic projection of the first magnetic concentrating layer 103 on the Hall plane exceeds the length of the sensitive area of ​​the second magnetic sensitive element 102 in the second direction, and does not exceed the second preset ratio of the length of the sensitive area of ​​the second magnetic sensitive element 102 in the second direction. It should be noted that the above-mentioned length exceeding the sensitive area refers to the interval between the outer edge and the outer edge of the corresponding sensitive area. Preferably, the first preset ratio is 1 / 3; the second preset ratio is 1 / 3. The outer edge of the first magnetic focusing layer 103 refers to the edge of the first magnetic focusing layer 103 away from the center of the magnetic focusing layer. The first magnetic focusing layer 103 satisfies the aforementioned symmetrical structure setting and its outer edge exceeds the induction center of each first magnetic sensitive element 101 and each second magnetic sensitive element 102 in the direction away from the center of the magnetic focusing layer to enhance the magnetic field concentration and deflection effect. At the same time, the outer edge does not exceed 1 / 4-2 / 5 of the length of the first magnetic sensitive element 101 or the second magnetic sensitive element 102 itself to avoid the magnetic field detection device being too large and the magnetic focusing effect being weakened. For example, refer to Figure 1 The projection of the first magnetic concentrating layer 103 on the Hall plane (XY plane) is located in the central area of ​​the area where the first Hall pair and the second Hall pair are located, and its center coincides with the center O of the cross. The outer edges exceed the sensing centers of the first magnetic sensitive element 101 and the second magnetic sensitive element 102, and its shape is symmetrical about the XY direction. The size of the first magnetic concentrating layer 103 is determined by the range of the outer edges. Each outer edge can extend from the a line (red line) passing through the sensing center to the b line (green line) covering no more than 1 / 3 of the first magnetic sensitive element 101.

[0107] In a possible implementation manner, the thickness of the first magnetic focusing layer 103 is 5-500 μm. By setting the thickness as above, the magnetic focusing effect is ensured while avoiding affecting the subsequent metal wire bonding process.

[0108] The magnetic field detection device also includes a second magnetic focusing layer 106, which is stacked on the third magnetic sensitive element 104 and is used to provide an additional magnetic field for the third magnetic sensitive element 104. The additional magnetic field can offset the component of the overflow magnetic field in the third direction of the first magnetic focusing layer 103 acting on the sensitive area of ​​the third magnetic sensitive element 104.

[0109] It can be understood that a gap is set between the first magnetic focusing layer 103 and the third magnetic sensitive element 104, but there is still some overflow magnetic field acting on the area of ​​the third magnetic sensitive element 104, affecting the magnetic field detection in its sensitive area, causing signal crosstalk of the third magnetic sensitive element 104. The second magnetic focusing layer 106 is located on the third magnetic sensitive element 104, and the additional magnetic field formed can partially or completely offset the influence of the overflow magnetic field on the sensitive area of ​​the third magnetic sensitive element 104 in the third direction, isolate the interference of the horizontal magnetic field, and realize the precise detection of the three-axis magnetic field.

[0110] In summary, the technical solution of the present application sets up a first Hall pair arranged at intervals along the first direction axis and a second Hall pair arranged at intervals along the second direction axis, and sets a first magnetic focusing layer 103 on the first Hall pair and the second Hall pair, so that it at least partially covers the first magnetic sensitive element 101 and the second magnetic sensitive element 102, so as to realize parallel magnetic field twisting of the edge, so as to perform horizontal magnetic field detection parallel to the Hall plane, and a third magnetic sensitive element 104 is also arranged on one side of the first Hall pair and / or the second Hall pair for detecting the magnetic field in the third direction, and a second magnetic focusing layer 106 is arranged thereon, which can at least partially offset the overflow magnetic field of the first magnetic focusing layer 103, so as to realize high isolation of signal detection, reduce signal crosstalk between axes, and improve the precision and accuracy of three-axis magnetic field detection.

[0111] Specifically, for the sensitive area of ​​the third magnetic sensitive element 104, the magnetic field component of the additional magnetic field in the third direction acting on the sensitive area and the component of the spillover magnetic field acting on the sensitive area cancel each other out. The Z-direction influence of the spillover magnetic field on the sensitive area of ​​the third magnetic sensitive element 104 is offset by the Z-direction influence of the additional magnetic field to isolate the interference of the horizontal magnetic field. Specifically, the magnetic field component cancellation here means that the third-direction component of the additional magnetic field acting on the sensitive area of ​​the third magnetic sensitive element 104 and the third-direction component of the spillover magnetic field acting on the sensitive area of ​​the third magnetic sensitive element 104 are anti-symmetric with respect to the Hall plane, so that the integral of the two on the sensitive area of ​​the third magnetic sensitive element 104 is zero.

[0112] In a possible implementation, if the third magnetic sensitive element is arranged on one side of the first Hall pair along the first direction axis, the sensitive area of ​​the third magnetic sensitive element 104 satisfies a preset isolation degree for the component of the spillover magnetic field in the second direction, that is, the integral of the interfering magnetic field in the second direction on the sensitive area is approximately zero, so that the third magnetic sensitive element 104 is completely isolated from the spillover magnetic field in the second direction, and the second magnetic focusing layer 106 only needs to offset the influence of the spillover magnetic field in the first direction, thereby simplifying the difficulty of setting up the magnetic field offset of the second magnetic focusing layer 106.

[0113] In a possible implementation, if the third magnetic sensitive element is arranged on one side of the second Hall pair along the second direction axis, the sensitive area of ​​the third magnetic sensitive element 104 satisfies a preset isolation sensitive area for the component of the spillover magnetic field in the first direction, that is, the integral of the interfering magnetic field in the first direction on the sensitive area is approximately zero, so that the third magnetic sensitive element 104 is completely isolated from the spillover magnetic field in the first direction, and the second magnetic focusing layer 106 only needs to offset the influence of the spillover magnetic field in the second direction, thereby simplifying the difficulty of setting up the magnetic field offset of the second magnetic focusing layer 106.

[0114] It should be noted that the above-mentioned cancellation, antisymmetry and integral of zero refer to cancellation, antisymmetry or integral of zero within the range of technical error, and are not limited to absolute cancellation, absolute antisymmetry or integral of zero in the physical sense.

[0115] Based on some or all of the above embodiments, in a possible embodiment, the orthographic projection of the second magnetic focusing layer on the Hall plane is symmetrical about the first direction and / or the second direction.

[0116] In a preferred embodiment, if the third magnetic sensitive element 104 is arranged on one side of the first Hall pair along the first direction axis, the first magnetic focusing layer 103 is symmetrical about the first direction axis, and optionally, is also symmetrical about the second direction. In combination with the symmetry of the sensitive area of ​​the third magnetic sensitive element 104 about the first direction axis, the interference magnetic field of the first magnetic focusing layer 103 acting on the sensitive area of ​​the third magnetic sensitive element 104 in the second direction has antisymmetry.

[0117] In a specific implementation, if the third magnetic sensitive element is arranged on one side of the first Hall pair along the first direction axis, and the sensitive area of ​​the third magnetic sensitive element 104 is symmetrical about the second direction axis, the orthographic projection of the first magnetic focusing layer 103 on the Hall plane is symmetrical about the first direction axis, and the orthographic projection of the second magnetic focusing layer 106 on the Hall plane is symmetrical about the first direction axis, and optionally, is also symmetrical about the second direction. By making the sensitive area of ​​the third magnetic sensitive element 104, the first magnetic focusing layer 103, and the second magnetic focusing layer 106 symmetrical in the same direction, it is ensured that the interference magnetic field of the spillover magnetic field generated by the first magnetic focusing layer 103 in the plane orthogonal direction (second direction) of the above-mentioned first direction axis has an antisymmetric effect on the third magnetic sensitive element, and the integral on the sensitive area (such as the sensitive surface) of the third magnetic sensitive element is close to zero, so that the third magnetic sensitive element 104 is completely isolated from the magnetic field in the plane orthogonal direction. The additional magnetic field of the second magnetic focusing layer 106 also has an antisymmetric effect on the third magnetic sensitive element 104 in the second direction. When setting the size and shape of the second magnetic focusing layer 106, only the Z component of the first direction needs to be offset, which simplifies the difficulty of simulation. In a preferred embodiment, if the third magnetic sensitive element 104 is arranged on one side of the second Hall pair along the second direction axis, the first magnetic focusing layer 103 is symmetrical about the second direction axis, and optionally, also symmetrical about the first direction axis. In combination with the sensitive area of ​​the third magnetic sensitive element 104 being axially symmetric about the second direction, the interfering magnetic field of the first magnetic focusing layer 103 acting on the sensitive area of ​​the third magnetic sensitive element 104 in the first direction has antisymmetry.

[0118] In a specific implementation, if the third magnetic sensitive element is arranged on one side of the second Hall pair along the second direction axis, and the sensitive area of ​​the third magnetic sensitive element 104 is symmetrical about the second direction axis, the orthographic projection of the first magnetic focusing layer 103 on the Hall plane is symmetrical about the second direction axis, and the orthographic projection of the second magnetic focusing layer 106 on the Hall plane is symmetrical about the second direction axis; optionally, it is also symmetrical about the first direction axis. By making the sensitive area of ​​the third magnetic sensitive element 104, the first magnetic focusing layer 103 and the second magnetic focusing layer 106 symmetrical in the same direction, it is ensured that the interference magnetic field of the spillover magnetic field generated by the first magnetic focusing layer 103 in the plane orthogonal direction (first direction) of the above-mentioned second direction axis has an antisymmetric effect on the third sensitive element, and the integral on the sensitive area (such as the sensitive surface) of the third sensitive element is close to or equal to zero, so that the third magnetic sensitive element 104 is completely isolated from the magnetic field in the above-mentioned plane orthogonal direction. The additional magnetic field of the second magnetic focusing layer 106 also has an antisymmetric effect on the third magnetic sensitive element 104 in the first direction. When setting the size and shape of the second magnetic focusing layer 106, only the Z component offset in the second direction needs to be considered, thereby simplifying the difficulty of simulation.

[0119] In a preferred embodiment, the orthographic projection of the second magnetic focusing layer on the Hall plane is not only symmetrical about the first direction and / or the second direction, but also rotationally symmetrical about the first direction and / or the second direction, and the rotation angle may be 90°.

[0120] In a possible implementation, the second magnetic focusing layer 106 is biased on the third magnetic sensitive element 104 and offset toward the side of the third magnetic sensitive element 104 that is away from the first magnetic focusing layer 103, so as to re-focus the magnetic field in the direction corresponding to the direction axis where the third magnetic sensitive element 104 is located in a direction opposite to the Z component of the spillover magnetic field.

[0121] It can be understood that the third magnetic sensitive element 104 is biased to one side of the first Hall pair along the first direction axis and / or biased to one side of the second Hall pair along the second direction axis. Therefore, the magnetic field generated by the first magnetic focusing layer 103 acts on the third magnetic sensitive element 104 and its adjacent magnetic sensitive element in almost the same direction. By setting the second magnetic focusing layer 106 on the side biased away from the magnetic focusing layer, an additional magnetic field in the opposite direction to the Z component of the spillover magnetic field can be provided.

[0122] In one embodiment, reference Figure 1 and Figure 4 , Hall A and Hall B are symmetrical about the Y axis, Hall C and Hall D are symmetrical about the X axis, and the center of the preset pattern coincides with the center O, Hall Z is set on one side of Hall B along the X axis and the sensitive area is symmetrical about the X axis, and the positive projections of the first magnetic focusing layer 103 and the second magnetic focusing layer 106 on the Hall plane are symmetrical about the X axis. Figure 4 The cross-sectional view on the X axis shows Hall A, Hall B and Hall Z from left to right. The influence of the overflow magnetic field of the first magnetic concentrating layer 103 on Hall Z in the X direction is approximately the same as that felt by the adjacent Hall B. Since Hall Z is far away from the first magnetic concentrating layer 103, the magnetic field strength in its sensitive area is weak. The magnetic field lines of the first magnetic concentrating layer 103 are as shown in FIG. Figure 4 As shown in M1, the magnetic lines of force affected by the spillover magnetic field on the Hall Z sensitive area are shown as M2, and the direction in the figure is oblique to the lower right, that is, the direction is downward and inclined toward the side away from the first Hall pair. At this time, adding a second magnetic focusing layer 106 on the outside of the Hall Z relative to the first Hall pair can offset the component of the spillover magnetic field in the Z axis (refer to the component of the M2 magnetic line of force in the Z direction) to achieve horizontal magnetic field isolation. Figure 4 The Z component of the magnetic field on the Hall Z of the additional magnetic field of the second magnetic concentrating layer 106 is opposite to the Z component of the spillover magnetic field M2, that is, it points upward in the figure, and the magnitude is offset by the Z component of the spillover magnetic field M2, so as to achieve the purpose of isolating the horizontal magnetic field. It can be understood that Figure 4The Hall Z in the sensor can move left and right on the X-axis based on actual needs, but cannot move up and down. If the Hall Z is set on the Y-axis, it can move up and down along the Y-axis, but cannot move left and right, to ensure that the spillover magnetic field in the plane orthogonal to the symmetry axis is offset.

[0123] It should be noted that the shape and size of the second magnetic concentrating layer 106 are obtained by simulation design based on the influence of the Z component of the spillover magnetic field on the sensitive area of ​​the third magnetic sensitive element 104 .

[0124] In a possible implementation manner, the thickness of the second magnetic focusing layer is 5-500 μm, so as to meet the magnetic focusing performance while avoiding affecting the wire bonding process of the electrode wiring.

[0125] In a possible implementation manner, the second magnetic focusing layer is a stack formed on the third magnetic sensitive element 104 based on a photolithography process or a mounting process. In a possible implementation manner, the second magnetic focusing layer 106 is a stack formed on the third magnetic sensitive element 104 based on a photolithography process to achieve sub-micron level alignment accuracy and improve the position accuracy of the second magnetic focusing layer 106. It can be understood that the first magnetic focusing layer 103 and the second magnetic focusing layer 106 can be formed in the same step based on the photolithography process.

[0126] In a possible implementation manner, the magnetic field component gain corresponding to the Hall voltage signal of the first Hall pair is consistent with the magnetic field component gain corresponding to the Hall voltage signal of the second Hall pair. It can be understood that the first magnetic focusing layer 103 is arranged directly above the preset pattern, and is arranged to be symmetrical and rotationally symmetrical about the first direction axis and the second direction axis, so that the magnetic field component gain of the XY axis can be consistent.

[0127] Understandably, Figure 1-2 Taking the device arrangement in as an example, the relationship between the magnetic field component B and the Hall voltage signal V is: AB =K x B x , V CD =K y B y , V Z =K Z B z , where V AB Represents the Hall voltage signal in the X direction output by Hall A and Hall B, V CD Characterizes the Hall voltage signal in the Y direction output by Hall C and Hall D, V Z is the Hall voltage signal in the Z direction output by the Hall Z, that is, the output of the magnetic field detection device is V AB , V CD and V Z , K is the gain of the Hall voltage to the magnetic field component, that is, it represents the gain of the magnetic field component, K x , Ky and K Z Respectively represent the magnetic field component gains in the three directions of XYZ.

[0128] Accordingly, we can get B x =V AB / K x , B y =V CD / K y , B z =V Z / K Z , through division calculation, a signal proportional to each magnetic field component can be output to prepare a linear Hall IC device (reference Figure 3 When the first magnetic focusing layer 103 is located directly above the preset pattern and is symmetrical about the X and Y directions, and is designed to be rotationally symmetrical about the XY axis, it can ensure that the magnetic field component gains in the X and Y directions are consistent (K x =K y ).

[0129] In a possible implementation, the magnetic field component gain corresponding to the Hall voltage signal of the first Hall pair, the magnetic field component gain corresponding to the Hall voltage signal of the second Hall pair and the magnetic field component gain corresponding to the Hall voltage signal in the third direction are consistent. It can be understood that the first magnetic focusing layer 103 is set directly above the preset pattern, and is set to a shape that is symmetrical and rotationally symmetrical about the first direction axis and the second direction axis, and then the rear-end signal amplification gain in the third direction is adjusted, so that the magnetic field component gain of the XYZ axis can be consistent. That is, when a linear magnetic sensitive element is required, K is guaranteed from the design and calibration. x =K y =K z =K, then the output gain of each axis signal is the same. In this way, the circuit design avoids division operations, and the output signal is the magnetic field component with the same gain on the three axes, which simplifies the circuit and reduces the cost. For example, Figure 2 and Figure 3 In the magnetic field detection device shown in the figure, the first magnetic concentrating layer 103 is a square or a regular octagon, and is completely rotationally symmetric in the XY direction. The gain in the two directions is consistent, and the gain is controlled by the back-end electronic method of the Z axis to obtain a linear Hall device with the same gain in three axes.

[0130] In summary, the present application provides a magnetic field detection device with a high-isolation magnetic circuit design, which can be used in a magnetic field detection chip to achieve a high suppression ratio and low drift of inter-axis signals, and the differential detection on the horizontal plane enables the XY axes to have strong anti-interference capabilities, and has the advantages of integration, miniaturization, low cost, anti-interference and high inter-axis isolation.

[0131] On the other hand, the present application provides a magnetic field detection chip, which includes the magnetic field detection device as described above.

[0132] On the other hand, the present application provides an integrated circuit, which includes the above-mentioned magnetic field detection device.

[0133] On the other hand, the present application provides an electronic device, which includes an electronic device made by using the above-mentioned magnetic field detection device or the method for making a magnetic field detection device. The electronic device may include any electronic component such as an integrated circuit, an electronic device, etc. Since the working performance of the magnetic field detection device is better, the performance of the electronic device is correspondingly improved.

[0134] The electronic device of the embodiment of the present application can be selected from any electronic product or device such as a mobile phone, a personal digital assistant (PDA), a tablet computer (pad), a laptop computer, a game console, a television, a video compact disc (VCD), a digital video disc (DVD), a navigator, a camera, a camcorder, a voice recorder, an MP3, an MP4, a handheld game console (PlayStation Portable, PSP), etc., and can also be any intermediate product of an electronic device made of the above-mentioned magnetic field detection device.

[0135] It should be noted that the various embodiments in this specification are described in a progressive manner, and each embodiment focuses on the differences from other embodiments. The same or similar parts between the various embodiments can be referenced to each other.

[0136] The above description has fully disclosed the specific implementation methods of the present application. It should be pointed out that any changes made by technicians familiar with the field to the specific implementation methods of the present application do not deviate from the scope of the claims of the present application. Accordingly, the scope of the claims of the present application is not limited to the above specific implementation methods.

Claims

1. A magnetic field detection device, characterized in that: The magnetic field detection device comprises: A first Hall pair, comprising a pair of first magnetic sensitive elements (101) spaced apart along a first direction axis; A second Hall pair, comprising a pair of second magnetic sensitive elements (102) spaced apart along a second direction axis, the first direction axis being orthogonal to the second direction axis, the first Hall pair and the second Hall pair being used to detect a horizontal magnetic field parallel to the Hall plane; A first magnetic focusing layer (103) is stacked on the first Hall pair and the second Hall pair, wherein the orthographic projection of the first magnetic focusing layer (103) on the Hall plane at least partially covers the first magnetic sensitive element (101) and the second magnetic sensitive element (102); A third magnetic sensitive element (104) is arranged at a distance along the first direction axis on one side of the first Hall pair, or is arranged at a distance along the second direction axis on one side of the second Hall pair; the third magnetic sensitive element (104) is used to detect a magnetic field in a third direction, the third direction being orthogonal to the Hall plane; A second magnetic concentrating layer (106) is laminated on the third magnetic sensitive element (104) and is used to provide an additional magnetic field for the third magnetic sensitive element (104), wherein the additional magnetic field can offset the component of the overflow magnetic field of the first magnetic concentrating layer (103) acting on the sensitive area of ​​the third magnetic sensitive element (104) in the third direction.

2. The magnetic field detection device according to claim 1, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The center of the orthographic projection of the first magnetic focusing layer (103) on the Hall plane coincides with the center of a preset pattern; The orthographic projection of the first magnetic focusing layer (103) on the Hall plane is symmetrical about the first direction axis and / or the second direction axis; The orthographic projection of the second magnetic focusing layer (106) on the Hall plane is symmetrical about the first direction and / or the second direction; If the third magnetic sensitive element (104) is arranged on one side of the first Hall pair along the first direction axis, and the sensitive area of ​​the third magnetic sensitive element (104) is axially symmetrical about the first direction, the orthographic projection of the first magnetic focusing layer (103) on the Hall plane is axially symmetrical about the first direction, and the orthographic projection of the second magnetic focusing layer (106) on the Hall plane is axially symmetrical about the first direction; If the third magnetic sensitive element (104) is arranged on one side of the second Hall pair along the second direction axis at an interval, and the sensitive area of ​​the third magnetic sensitive element (104) is symmetrical about the second direction axis, the orthographic projection of the first magnetic focusing layer (103) on the Hall plane is symmetrical about the second direction axis, and the orthographic projection of the second magnetic focusing layer (106) on the Hall plane is symmetrical about the second direction axis.

3. The magnetic field detection device according to claim 1, characterized in that: The second magnetic focusing layer (106) is biased on the third magnetic sensitive element (104) and is offset toward a side of the third magnetic sensitive element (104) away from the first magnetic focusing layer (103).

4. The magnetic field detection device according to any one of claims 1 to 3, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The two first magnetic sensitive elements (101) in the first Hall pair are arranged symmetrically about the second direction; The two second magnetic sensitive elements (102) in the second Hall pair are arranged symmetrically about the first direction; The intersection of the first direction axis and the second direction axis is located in the middle of a preset pattern formed by the first Hall pair and the second Hall pair; The first Hall pair and the second Hall pair are arranged rotationally symmetrically.

5. The magnetic field detection device according to any one of claims 1 to 3, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The sensitive area of ​​the first magnetic sensitive element (101), the sensitive area of ​​the second magnetic sensitive element (102) and the sensitive area of ​​the third magnetic sensitive element (104) are arranged in the same plane; The first Hall pair is used for differentially detecting a magnetic field in a first direction, and the second Hall pair is used for differentially detecting a magnetic field in a second direction; The first Hall pair and the second Hall pair are differentially connected in parallel; If the third magnetic sensitive element (104) is arranged at one side of the first Hall pair along the first direction axis, the third magnetic sensitive element (104) is connected in a colinear manner with a working positive electrode or a working negative electrode of the adjacent first magnetic sensitive element (101); If the third magnetic sensitive element (104) is arranged at a distance from one side of the second Hall pair along the second direction axis, the third magnetic sensitive element (104) is connected in a colinear manner with a working positive electrode or a working negative electrode of an adjacent second magnetic sensitive element (102).

6. The magnetic field detection device according to any one of claims 1 to 3, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The sensitive area of ​​the first magnetic sensitive element (101) is a structure symmetrical with respect to the first direction and / or the second direction; The sensitive area of ​​the second magnetic sensitive element (102) is a structure symmetrical with respect to the second direction and / or the first direction; The sensitive area of ​​the third magnetic sensitive element (104) is a structure that is symmetrical about the first direction and / or symmetrical about the second direction.

7. The magnetic field detection device according to claim 6, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The sensitive area of ​​the first magnetic sensitive element (101) is a rotationally symmetrical structure with respect to the first direction and the second direction; The sensitive area of ​​the second magnetic sensitive element (102) is a rotationally symmetrical structure with respect to the first direction and the second direction; The sensitive area of ​​the third magnetic sensitive element (104) is a rotationally symmetrical structure about the first direction axis or the second direction axis; If the third magnetic sensitive element (104) is arranged at one side of the first Hall pair along the first direction axis, the sensitive area of ​​the third magnetic sensitive element (104) is symmetrical about the first direction axis; If the third magnetic sensitive element (104) is arranged at a distance from one side of the second Hall pair along the second direction axis, the sensitive area of ​​the third magnetic sensitive element (104) is symmetrical about the second direction axis.

8. The magnetic field detection device according to any one of claims 1 to 3, characterized in that: The orthographic projection of the first magnetic focusing layer (103) on the Hall plane covers the inductive center of the first magnetic sensitive element (101) and the inductive center of the second magnetic sensitive element (102); the outer edge of the orthographic projection of the first magnetic focusing layer (103) on the Hall plane exceeds the length of the sensitive area of ​​the first magnetic sensitive element (101) in the first direction, but does not exceed a first preset ratio of the length of the sensitive area of ​​the first magnetic sensitive element (101) in the first direction; the first preset ratio is 1 / 4-2 / 5; The outer edge of the orthographic projection of the first magnetic concentrating layer (103) on the Hall plane exceeds the length of the sensitive area of ​​the second magnetic sensitive element (102) in the second direction, but does not exceed a second preset ratio of the length of the sensitive area of ​​the second magnetic sensitive element (102) in the second direction, and the second preset ratio is 1 / 4-2 / 5.

9. The magnetic field detection device according to any one of claims 1 to 3, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The thickness of the first magnetic concentrating layer (103) is 5-500 μm; The thickness of the second magnetic concentrating layer (106) is 5-500 μm; The first magnetic focusing layer (103) is a stacked layer formed on the first Hall pair and the second Hall pair based on a photolithography process or a mounting process; The second magnetic concentrating layer (106) is a stacked layer formed on the third magnetic sensitive element (104) based on a photolithography process or a mounting process.

10. The magnetic field detection device according to claim 9, characterized in that: The magnetic field detection device meets at least one of the following characteristics: The orthographic projection of the first magnetic focusing layer (103) on the Hall plane is rotationally symmetric about the first direction axis and / or the second direction axis; The orthographic projection of the second magnetic focusing layer (106) on the Hall plane is rotationally symmetric about the first direction and the second direction.

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