A method for preparing a coating-enhanced full-color optoelectronic functional material

Abstract

The present invention provides a method for preparing a full-color photoelectric functional material with film coating synergy, and relates to the field of solar photovoltaic. The preparation of the full-color photoelectric functional material includes the following steps: step 1, cleaning the full-color micro-coating and plasma piston; step 2, evaporating a layer of ZnO film on the surface of the full-color micro-coating; step 3, etching a velvet structure on the ZnO film; step 4, coating a smooth functional film on the velvet surface of the velvet ZnO film by vacuum deposition. The method covers the full-color photoelectric functional material with a high-transmittance velvet metal oxide film or coating, and the uneven velvet surface increases the refraction and scattering of light, so that the full-color photoelectric functional material can absorb light from multiple angles and improve the utilization rate of light.

Description

Technical Field

[0001] The invention relates to the technical field of solar photovoltaic technology, and in particular to a method for preparing a film-plating efficiency-enhanced full-color photoelectric functional material. Background Art

[0002] With the growing global demand for renewable energy, solar photovoltaic technology, as a clean and sustainable energy solution, has become one of the key technologies for the transformation of energy structures in many countries and regions. In this context, the design and performance of full-color optoelectronic functional materials not only directly affect the energy conversion efficiency, but also play an important role in improving architectural aesthetics and urban environment. In particular, full-color optoelectronic functional materials, with their brilliant colors and flexible design, are increasingly favored by consumers in the fields of engineering lighting and landmark building display, becoming a highlight of modern urban architecture.

[0003] However, existing full-color optoelectronic functional materials face a series of challenges in practical applications. First, the utilization rate of light by existing full-color optoelectronic functional materials is too low, resulting in the inability of the materials to effectively convert or utilize incident light, which greatly limits the application of full-color optoelectronic functional materials; the existing components are coated with a layer of polymer material pattern on the surface to achieve color effects, but the hardness of this coating is relatively low and is easily scratched and worn by external physical factors, which greatly reduces the effective service life of full-color optoelectronic functional materials. Summary of the invention

[0004] 1. Technical issues to be resolved

[0005] In view of the shortcomings of the prior art, the present invention provides a method for preparing a full-color optoelectronic functional material with a coating efficiency enhancement, which solves the problem that the full-color optoelectronic functional materials in the prior art have too low light utilization.

[0006] (II) Technical solution

[0007] To achieve the above objectives, the present invention is implemented by the following technical scheme: A method for preparing a full-color optoelectronic functional material with film-coating synergy enhancement, comprising the following steps:

[0008] Step 1: Clean the surface of the full-color micro-coating of the full-color optoelectronic functional material in a dust-free environment, and perform plasma activation treatment on the surface of the full-color micro-coating;

[0009] Step 2: Placing the plasma activated full-color optoelectronic functional material and the zinc oxide evaporation carrier in an evaporation machine, evacuating the inner cavity of the evaporation machine three times, and introducing an inert gas into the inner cavity of the evaporation machine to heat the zinc oxide evaporation carrier, so that a ZnO film with a thickness of 150-300 nm is formed on the surface of the full-color micro-coating;

[0010] Step 3: using photoresist as a mask material, etching the ZnO film formed by vapor deposition in a dot-matrix pattern, so that a suede structure is formed on the ZnO film;

[0011] Step 4: A smooth functional film is coated on the velvet surface of the velvet ZnO film by vacuum deposition to complete the preparation of the full-color optoelectronic functional material with coating synergy.

[0012] Preferably, in the step 1, the surface of the full-color micro-coating is cleaned of dust or grease on the surface of the full-color optoelectronic functional material by using acetone or ethanol, and then cleaned and dried by using anhydrous ethanol.

[0013] Preferably, the heating rate in step 2 is 8°C / min, the inert gas is set to one or more of nitrogen, helium and argon, and the internal pressure after the three vacuum treatments is not higher than 10 -4 Torr.

[0014] Preferably, the zinc oxide evaporation carrier in the step 2 is a sintered particle of a mixture of zinc oxide, metal oxides other than zinc oxide and metal oxides with a metal valence of four, the molar mass of the metal oxides other than zinc oxide accounts for 0.02-3% of the total molar mass of the zinc oxide evaporation carrier, and the molar mass of the metal oxides with a metal valence of four accounts for 0.01-5% of the total molar mass of the zinc oxide evaporation carrier.

[0015] Preferably, the size of a single dot in the dot matrix in step three is set to a square dot with a side length of 0.3-0.5 μm or a circular dot with a diameter of 0.3-0.5 μm, the dots in the dot matrix etching are arranged in a square array, and the distance between adjacent dots in the square array is set to 2-2.5 μm.

[0016] Preferably, the etching method of the ZnO film in step three is to first prepare an alkaline etching solution, and then etch the ZnO film with the alkaline etching solution, generate mechanical waves through an ultrasonic generator during the etching process, so that a large number of bubbles at the etching location take away the etched impurities, and the etching time is set to 10-35 minutes.

[0017] Preferably, the alkaline etching solution is formulated as follows: the mass percentage of sodium hydroxide or potassium hydroxide is 0.05% to 15%, the mass percentage of ethanol or isopropanol is 5% to 30%, and the mass percentage of sodium silicate is 0.05% to 3%; the temperature of the reaction solution is maintained at 50°C to 100°C.

[0018] Preferably, the vacuum deposition method for coating the functional film in step 4 includes the following steps: cleaning the surface with an organic solvent (such as acetone or isopropanol) to clean the rough metal oxide layer to remove surface contaminants; using a silicon target or a target containing silicon oxide for deposition to form a highly transparent and hard protective layer; ensuring that the evaporation or sputtering equipment can reach 10 -6 Torr or lower vacuum to reduce gas contamination; select argon (Ar) as the main gas and oxygen as the auxiliary gas, set the argon flow rate to 10-40sccm, and the oxygen flow rate to between 1-10sccm; raise the temperature to 200℃ for deposition, which can effectively improve the quality and adhesion of the film; turn on the evaporation or sputtering power of the target material, monitor the gas flow and film thickness at the same time, use QCM or other film thickness monitoring equipment to measure the film thickness in real time to ensure that the required thickness is achieved, and the deposition power is usually set to 50W to 300W; the deposition thickness range of the functional film is 10-200nm, the deposition rate is set to 0.1-1nm / s, and the deposited functional film is post-processed with heat treatment, the commonly used temperature range is 200-400℃, and the time is set to 1-2 hours to promote the stress release and crystal structure optimization of the film; grind and polish the surface of the functional film to improve the smoothness of the functional film.

[0019] Working principle: This method uses a combination of evaporation and etching to uniformly coat a layer of transparent velvet metal oxide film on the surface of the full-color micro-coating to obtain a film or coating with more velvet (higher roughness). After regulation, more than 80% of the 100% direct light source can be reused through refraction or scattering, so that more light can be captured by the full-color optoelectronic functional material, improving the utilization rate of light and further improving the photoelectric conversion efficiency. In addition, a functional film is coated on the outside of the high-transmittance velvet oxide film or layer. For example, SiOx material can be selected for the high-transmittance and hard protective layer, and other oxides can also be used for different functions.

[0020] (III) Beneficial effects

[0021] The present invention provides a method for preparing a full-color photoelectric functional material with enhanced coating performance. It has the following beneficial effects:

[0022] 1. This method covers the full-color optoelectronic functional material with a high-transmittance velvet metal oxide film or coating. The uneven velvet surface increases the refraction and scattering of light, so that the full-color optoelectronic functional material can absorb light from multiple angles and improve the utilization rate of light.

[0023] 2. This method coats a functional film on the outside of a high-light-transmittance velvet metal oxide film or coating, including functions such as water barrier, oxygen barrier, high light transmittance, and protection, which can effectively improve the service life and use effect of the high-light-transmittance velvet metal oxide film or coating. BRIEF DESCRIPTION OF THE DRAWINGS

[0024] Figure 1 It is a schematic diagram of the overall structure of the present invention.

[0025] Among them, 1. Full-color optoelectronic functional materials; 2. Full-color micro-coating; 3. ZnO velvet; 4. Functional film. DETAILED DESCRIPTION

[0026] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0027] Embodiment 1:

[0028] like Figure 1 As shown, an embodiment of the present invention provides a method for preparing a full-color optoelectronic functional material with a coating synergistic effect, comprising the following steps:

[0029] Step 1: clean the dust or grease on the surface of the full-color micro-coating of the full-color optoelectronic functional material with acetone, and use anhydrous ethanol to clean and dry it, and perform plasma activation treatment on the surface of the full-color micro-coating;

[0030] Step 2: Placing the plasma activated full-color optoelectronic functional material and the zinc oxide evaporation carrier in an evaporation machine, wherein the zinc oxide evaporation carrier is a mixture of sintered particles of zinc oxide, metal oxides other than zinc oxide, and metal oxides with a metal valence of four valences, wherein the molar mass of the metal oxides other than zinc oxide accounts for 1% of the total molar mass of the zinc oxide evaporation carrier, and the molar mass of the metal oxides with a metal valence of four valences accounts for 1% of the total molar mass of the zinc oxide evaporation carrier, and the internal cavity of the evaporation machine is evacuated three times, and an inert gas is introduced into the internal cavity of the evaporation machine to heat the zinc oxide evaporation carrier, so that a ZnO film with a thickness of 215 nm is formed on the surface of the full-color micro-coating, the heating temperature rise rate is 8°C / min, and the inert gas is set to one or more of nitrogen, helium and argon. The internal air pressure after three vacuum treatments is not higher than 10 -4 Torr.

[0031] Step 3, using photoresist as a mask material, the ZnO film formed by vapor deposition is etched in a dot matrix, the size of a single dot in the dot matrix is ​​set to a square dot with a side length of 0.4 μm, the dots in the dot matrix etching are arranged in a square array, and the distance between adjacent dots in the square array is set to 2.4 μm, so that a velvet structure is formed on the ZnO film. The etching method of the ZnO film is as follows: first, an alkaline etching solution is prepared, and then the ZnO film is etched by the alkaline etching solution. During the etching process, mechanical waves are generated by an ultrasonic generator, so that a large number of bubbles are taken away from the etching impurities at the etching location. The etching time is set to 20 minutes, and the alkaline etching solution is prepared as follows: the mass percentage of sodium hydroxide or potassium hydroxide is 10%, the mass percentage of ethanol or isopropanol is 20%, and the mass percentage of sodium silicate is 2%; the temperature of the reaction solution is maintained at 50°C.

[0032] Step 4: A smooth functional film is deposited on the velvet surface of the velvet ZnO film by vacuum deposition to complete the preparation of the full-color optoelectronic functional material with enhanced coating efficiency. The vacuum deposition method for coating the functional film includes the following steps: cleaning the surface with an organic solvent to clean the rough metal oxide layer to remove surface pollutants; using a silicon target or a target containing silicon oxide for deposition to form a high light transmittance and hard protective layer; ensuring that the evaporation or sputtering equipment can reach 10 -6 Torr or lower vacuum to reduce gas contamination; select argon (Ar) as the main gas and oxygen as the auxiliary gas, set the argon flow rate to 20sccm, and the oxygen flow rate to 2sccm; raise the temperature to 200°C for deposition, which can effectively improve the quality and adhesion of the film; turn on the evaporation or sputtering power of the target material, monitor the gas flow and film thickness at the same time, use QCM or other film thickness monitoring equipment to measure the film thickness in real time to ensure that the required thickness is reached, and the deposition power is set to 100; the deposition thickness of the functional film is 150nm, the deposition rate is set to 0.5nm / s, and the deposited functional film is post-processed with heat treatment at a temperature of 300°C and a time of 1.5 hours to promote stress release and crystal structure optimization of the film; grind and polish the surface of the functional film to improve the smoothness of the functional film.

[0033] Embodiment 2:

[0034] like Figure 1 As shown, an embodiment of the present invention provides a method for preparing a full-color optoelectronic functional material with a coating synergistic effect, comprising the following steps:

[0035] Step 1: clean the dust or grease on the surface of the full-color micro-coating of the full-color optoelectronic functional material with ethanol, and use anhydrous ethanol to clean and dry, and perform plasma activation treatment on the surface of the full-color micro-coating;

[0036] Step 2: Placing the plasma activated full-color optoelectronic functional material and the zinc oxide evaporation carrier in an evaporation machine, wherein the zinc oxide evaporation carrier is a mixture of sintered particles of zinc oxide, metal oxides other than zinc oxide, and metal oxides with a metal valence of four valences, wherein the molar mass of the metal oxides other than zinc oxide accounts for 3% of the total molar mass of the zinc oxide evaporation carrier, and the molar mass of the metal oxides with a metal valence of four valences accounts for 5% of the total molar mass of the zinc oxide evaporation carrier, and the internal cavity of the evaporation machine is evacuated three times, and an inert gas is introduced into the internal cavity of the evaporation machine to heat the zinc oxide evaporation carrier, so that a ZnO film with a thickness of 300 nm is formed on the surface of the full-color micro-coating, the heating temperature rise rate in step 2 is 8°C / min, and the inert gas is set to one or more of nitrogen, helium and argon, and the internal air pressure after three vacuum treatments is not higher than 10 -4 Torr.

[0037] Step 3, using photoresist as a mask material, etching the ZnO film formed by vapor deposition in a dot matrix, the size of a single dot in the dot matrix is ​​set to a square dot with a side length of 0.5 μm, the dots in the dot matrix etching are arranged in a square array, and the distance between adjacent dots in the square array is set to 2.5 μm, so that a velvet structure is formed on the ZnO film. The etching method of the ZnO film is as follows: firstly, an alkaline etching solution is prepared, and then the ZnO film is etched by the alkaline etching solution. During the etching process, mechanical waves are generated by an ultrasonic generator, so that a large number of bubbles are taken away from the etching impurities at the etching location. The etching time is set to 10-35 minutes, and the alkaline etching solution is prepared as follows: the mass percentage of sodium hydroxide or potassium hydroxide is 12%, the mass percentage of ethanol or isopropanol is 20%, and the mass percentage of sodium silicate is 2%; the temperature of the reaction solution is maintained at 75°C.

[0038] Step 4: A smooth functional film is deposited on the velvet surface of the velvet ZnO film by vacuum deposition to complete the preparation of the full-color optoelectronic functional material with enhanced coating efficiency. The vacuum deposition method for coating the functional film includes the following steps: using an organic solvent to clean the surface and clean the rough metal oxide layer to remove surface pollutants; using a silicon target or a target containing silicon oxide for deposition to form a high light transmittance and hard protective layer; ensuring that the evaporation or sputtering equipment can reach 10 -6Torr or lower vacuum to reduce gas contamination; select argon as the main gas and oxygen as the auxiliary gas, set the argon flow rate to 30sccm, and the oxygen flow rate to 10sccm; raise the temperature to 200℃ for deposition, which can effectively improve the quality and adhesion of the film; turn on the evaporation or sputtering power of the target material, monitor the gas flow and film thickness at the same time, use QCM or other film thickness monitoring equipment to measure the film thickness in real time to ensure that the required thickness is achieved, and the deposition power is usually set to 50W to 300W; the deposition thickness range of the functional film is 100nm, the deposition rate is set to 0.5nm / s, and the deposited functional film is post-processed with heat treatment. The commonly used temperature range is 400℃ and the time is set to 2 hours to promote the stress release and crystal structure optimization of the film; grind and polish the surface of the functional film to improve the smoothness of the functional film.

[0039] Embodiment three:

[0040] like Figure 1 As shown, an embodiment of the present invention provides a method for preparing a full-color optoelectronic functional material with a coating synergistic effect, comprising the following steps:

[0041] Step 1: clean the dust or grease on the surface of the full-color micro-coating of the full-color optoelectronic functional material with ethanol, and use anhydrous ethanol to clean and dry, and perform plasma activation treatment on the surface of the full-color micro-coating;

[0042] Step 2: Placing the plasma activated full-color optoelectronic functional material and the zinc oxide evaporation carrier in an evaporation machine, wherein the zinc oxide evaporation carrier is a mixture of sintered particles of zinc oxide, metal oxides other than zinc oxide, and metal oxides with a metal valence of four valences, wherein the molar mass of the metal oxides other than zinc oxide accounts for 2% of the total molar mass of the zinc oxide evaporation carrier, and the molar mass of the metal oxides with a metal valence of four valences accounts for 3% of the total molar mass of the zinc oxide evaporation carrier, and the internal cavity of the evaporation machine is evacuated three times, and an inert gas is introduced into the internal cavity of the evaporation machine to heat the zinc oxide evaporation carrier, so that a ZnO film with a thickness of 300 nm is formed on the surface of the full-color micro-coating, the heating temperature rise rate in step 2 is 8°C / min, and the inert gas is set to one or more of nitrogen, helium and argon, and the internal air pressure after three vacuum treatments is not higher than 10 -4 Torr.

[0043] Step 3, using photoresist as a mask material, etching the ZnO film formed by vapor deposition in a dot matrix, the size of a single dot in the dot matrix is ​​set to a circular dot of 0.5 μm, the dots in the dot matrix etching are arranged in a square array, and the distance between adjacent dots in the square array is set to 2.5 μm, so that a velvet structure is formed on the ZnO film. The etching method of the ZnO film is as follows: firstly, an alkaline etching solution is prepared, and then the ZnO film is etched by the alkaline etching solution. During the etching process, mechanical waves are generated by an ultrasonic generator, so that a large number of bubbles are taken away from the etching impurities at the etching location. The etching time is set to 10-35 minutes, and the alkaline etching solution is prepared as follows: the mass percentage of sodium hydroxide or potassium hydroxide is 15%, the mass percentage of ethanol or isopropanol is 5%, and the mass percentage of sodium silicate is 0.05%; the temperature of the reaction solution is maintained at 50°C.

[0044] Step 4: A smooth functional film is deposited on the velvet surface of the velvet ZnO film by vacuum deposition to complete the preparation of the full-color optoelectronic functional material with enhanced coating efficiency. The vacuum deposition method for coating the functional film includes the following steps: cleaning the surface with an organic solvent to clean the rough metal oxide layer to remove surface pollutants; using a silicon target or a target containing silicon oxide for deposition to form a high light transmittance and hard protective layer; ensuring that the evaporation or sputtering equipment can reach 10 -6 Torr or lower vacuum to reduce gas contamination; select argon as the main gas and oxygen as the auxiliary gas, set the argon flow rate to 10sccm, and the oxygen flow rate to 1sccm; raise the temperature to 200℃ for deposition, which can effectively improve the quality and adhesion of the film; turn on the evaporation or sputtering power of the target material, monitor the gas flow and film thickness at the same time, use QCM or other film thickness monitoring equipment to measure the film thickness in real time to ensure that the required thickness is achieved, and the deposition power is usually set to 250W; the deposition thickness of the functional film is set to 150nm, the deposition rate is set to 0.5nm / s, and the deposited functional film is post-processed with heat treatment. The commonly used temperature range is 300℃ and the time is set to 1 hour to promote the stress release and crystal structure optimization of the film; grind and polish the surface of the functional film to improve the smoothness of the functional film.

[0045] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A method for preparing a full-color optoelectronic functional material with film-coating synergy, characterized in that: The following steps are involved: Step 1: Clean the surface of the full-color micro-coating of the full-color optoelectronic functional material in a dust-free environment, and perform plasma activation treatment on the surface of the full-color micro-coating; Step 2: Placing the plasma activated full-color optoelectronic functional material and the zinc oxide evaporation carrier in an evaporation machine, evacuating the inner cavity of the evaporation machine three times, and introducing an inert gas into the inner cavity of the evaporation machine to heat the zinc oxide evaporation carrier, so that a ZnO film with a thickness of 150-300 nm is formed on the surface of the full-color micro-coating; Step 3: using photoresist as a mask material, etching the ZnO film formed by vapor deposition in a dot-matrix pattern, so that a suede structure is formed on the ZnO film; Step 4: A smooth functional film is coated on the velvet surface of the velvet ZnO film by vacuum deposition to complete the preparation of the full-color optoelectronic functional material with coating synergy.

2. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: In the step 1, the surface of the full-color micro-coating is cleaned of dust or grease on the surface of the full-color optoelectronic functional material by using acetone or ethanol, and then cleaned and dried by using anhydrous ethanol.

3. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: The heating rate in step 2 is 8°C / min, the inert gas is set to one or more of nitrogen, helium and argon, and the internal pressure after the three vacuum treatments is not higher than 10 -4 Torr.

4. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: The zinc oxide evaporation carrier in the step 2 is a sintered particle of a mixture of zinc oxide, metal oxides other than zinc oxide, and metal oxides with a metal valence of four. The molar mass of the metal oxides other than zinc oxide accounts for 0.02-3% of the total molar mass of the zinc oxide evaporation carrier, and the molar mass of the metal oxides with a metal valence of four accounts for 0.01-5% of the total molar mass of the zinc oxide evaporation carrier.

5. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: The size of a single dot in the dot matrix in step three is set to a square dot with a side length of 0.3-0.5 μm or a circular dot with a diameter of 0.3-0.5 μm. The dots in the dot matrix etching are arranged in a square array, and the distance between adjacent dots in the square array is set to 2-2.5 μm.

6. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: The etching method of the ZnO film in step three is to first prepare an alkaline etching solution, and then etch the ZnO film with the alkaline etching solution. During the etching process, a mechanical wave is generated by an ultrasonic generator, so that a large number of bubbles are taken away from the etching site. The etching time is set to 10-35 minutes.

7. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 6, characterized in that: The alkaline etching solution is prepared as follows: the mass percentage of sodium hydroxide or potassium hydroxide is 0.05% to 15%, the mass percentage of ethanol or isopropanol is 5% to 30%, and the mass percentage of sodium silicate is 0.05% to 3%; the temperature of the reaction solution is maintained at 50°C to 100°C.

8. The method for preparing a full-color photoelectric functional material with film-coating synergy according to claim 1, characterized in that: The vacuum deposition method for coating the functional film in step 4 includes the following steps: cleaning the surface with an organic solvent to clean the rough metal oxide layer; using a silicon target or a target material containing silicon oxide for deposition; Ensure that the evaporation or sputtering equipment can reach 10 -6 Torr or lower vacuum; select argon as the main gas and oxygen as the auxiliary gas, set the argon flow rate to 10-40sccm, and the oxygen flow rate to between 1-10sccm; raise the temperature to 200℃ for deposition; turn on the evaporation or sputtering power of the target material, monitor the gas flow and film thickness at the same time, use QCM or other film thickness monitoring equipment to measure the film thickness in real time to ensure that the required thickness is achieved, and the deposition power is usually set to 50W to 300W; the deposition thickness range of the functional film is 10-200nm, the deposition rate is set to 0.1-1nm / s, and the deposited functional film is post-processed with heat treatment. The commonly used temperature range is 200-400℃, and the time is set to 1-2 hours; the surface of the functional film is ground and polished.

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