Solar cell with transparent conductive antireflection film structure and manufacturing method thereof

Abstract

The invention provides a solar cell with a transparent conductive antireflection film structure and a manufacturing method thereof. The manufacturing method comprises the following steps: growing and preparing an epitaxial layer structure on a substrate; preparing a transparent conductive antireflection film structure on one side surface of the epitaxial layer structure; preparing a metal grid line electrode for welding a solar cell on the transparent conductive antireflection film structure; and preparing a metal back electrode on the other side surface of the epitaxial layer structure. The solar cell has the advantages that the transparent conductive antireflection film structure and the metal grid line electrode are combined to serve as the front electrode of the solar cell, the transparent conductive antireflection film structure conducts electricity, the metal grid line electrode is used for welding the solar cell, the grid line occupied area is reduced, and the light incidence efficiency is improved.

Description

Technical Field

[0001] The invention belongs to the technical field of solar cells, and in particular relates to a solar cell with a transparent conductive anti-reflection film structure and a manufacturing method thereof. Background Art

[0002] Solar photovoltaic power generation is a clean way of generating electricity, which converts sunlight into electrical energy for people to use. Traditionally, silicon and germanium batteries are mostly used. Gallium arsenide batteries have been widely used because of their wide bandgap, good spectral responsiveness and spectral matching capabilities, and high photoelectric conversion efficiency.

[0003] Conductive anti-reflection film refers to transparent films such as ITO, TCO, AZO, and BZO, with ITO being the most representative. ITO film (i.e. indium tin oxide film) has high transmittance in the visible light range, reflectivity to infrared rays, and absorptivity to ultraviolet rays, and has excellent conductivity. It is widely used in optoelectronic devices such as solar cells, light-emitting devices, and laser diodes. Due to the good conductivity of ITO, the area of ​​metal grid lines can be reduced, the transmittance of light can be increased, and the conversion efficiency of the battery can be improved.

[0004] In solar cells, the main function of the upper and lower electrodes is to draw out current and to be used for welding. The upper electrode surface is the light-receiving surface. In order to better draw out the current, a metal grid line is usually used; however, the metal grid line occupies a certain area, generally about 5%, and the proportion of large-size batteries will be even greater. The metal grid line plays a shading role, which causes loss of sunlight. Reducing the metal grid line will also cause a certain loss of current, which is not conducive to current collection. Summary of the invention

[0005] In view of the above problems, the present invention provides a solar cell with a transparent conductive anti-reflection film structure and a manufacturing method thereof to solve the above or other former problems existing in the prior art.

[0006] In order to solve the above technical problems, the technical solution adopted by the present invention is: a method for manufacturing a solar cell with a transparent conductive anti-reflection film structure, comprising the following steps:

[0007] Growing and preparing an epitaxial layer structure on a substrate;

[0008] Prepare a transparent conductive anti-reflection film structure on one side of the epitaxial layer structure;

[0009] Preparing metal grid electrodes for welding solar cells on a transparent conductive anti-reflection film structure;

[0010] A metal back electrode is prepared on the other side of the epitaxial layer structure.

[0011] Furthermore, a transparent conductive anti-reflection film structure is prepared on the epitaxial layer structure by evaporation, and the transparent conductive anti-reflection film structure includes one or a combination of TCO film, ITO film, IWO film, AZO film, and BZO film.

[0012] Furthermore, the transparent conductive anti-reflection film structure is prepared by evaporation in a high vacuum coating device using electron beam heating, and the vacuum degree of the high vacuum coating device is greater than 2.0E10-4Pa.

[0013] Furthermore, a metal grid line electrode is prepared on the transparent conductive anti-reflection film by evaporation, and the metal grid line electrode includes one or a combination of gold, germanium, silver, titanium, and nickel.

[0014] Furthermore, the metal grid line electrode is a gold-germanium-silver-gold composite electrode.

[0015] Furthermore, before preparing the metal grid line electrode, an electrode pattern area is prepared on the transparent conductive anti-reflection film structure by photolithography, and the metal grid line electrode is prepared in the electrode pattern area.

[0016] Furthermore, the metal back electrode is prepared by evaporation, and the metal back electrode includes one or a combination of gold, germanium, silver, titanium, and nickel.

[0017] Furthermore, the metal back electrode is a gold-germanium-silver composite electrode.

[0018] Furthermore, before preparing the metal gate electrode or the metal back electrode, a cleaning solution is used to clean the corresponding side of the epitaxial layer structure, and the cleaning solution is a hydrochloric acid solution, a sulfuric acid solution, or a nitric acid solution.

[0019] A solar cell with a transparent conductive anti-reflection film structure is prepared using the above-mentioned method for preparing a solar cell with a transparent conductive anti-reflection film structure. The cell comprises a metal back electrode, an epitaxial layer structure, a transparent conductive anti-reflection film structure and a metal grid electrode arranged in sequence from bottom to top.

[0020] Due to the adoption of the above technical solution, the solar cell has a transparent conductive anti-reflection film structure, which is located on one side of the epitaxial layer structure. A metal grid electrode is arranged on the transparent conductive anti-reflection film structure, which is only used for welding with the solar cell. The metal grid electrode is combined with the transparent conductive anti-reflection film, which is different from the conventional electrode structure composed of a main grid and a sub-grid. The metal grid electrode does not have a sub-grid but only has a main grid, and compared with the main grid of the conventional metal grid electrode, its area can be reduced to meet the welding use requirements. The transparent conductive anti-reflection film can conduct electricity, reduce the grid line ratio (only retain the main grid for welding) and improve the incident efficiency of light. Compared with the metal grid as the front electrode, the transparent conductive anti-reflection film and the metal grid as the front electrode, the transparent conductive anti-reflection film has high light transmittance and high conductivity, which can increase the conductivity of the metal grid, the transparent conductive anti-reflection film has high electron mobility, is easy to form ohmic contact with the surface of the epitaxial layer structure and the metal, reduces the surface contact resistance, is simple to prepare, has low cost, and is conducive to industrial application. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] Figure 1 is a schematic structural diagram of a solar cell with a transparent conductive anti-reflection film structure according to an embodiment of the present invention;

[0022] Figure 2 It is a schematic top view of a solar cell with a transparent conductive anti-reflection film structure according to an embodiment of the present invention.

[0023] In the figure:

[0024] 1. Metal grid electrode 2. Transparent anti-reflection film structure 3. Epitaxial layer structure

[0025] 4. Metal back electrode DETAILED DESCRIPTION

[0026] The present invention will be further described below in conjunction with the accompanying drawings and specific embodiments.

[0027] Figure 1 A structural schematic diagram of an embodiment of the present invention is shown. This embodiment relates to a solar cell with a transparent conductive anti-reflection film structure and a manufacturing method thereof. The transparent conductive anti-reflection film structure is combined with a metal grid electrode as the front electrode of the solar cell. The transparent conductive anti-reflection film structure conducts electricity, and the metal grid electrode is used for welding the solar cell, thereby reducing the area occupied by the grid line and improving the incident efficiency of light.

[0028] A method for manufacturing a solar cell having a transparent conductive anti-reflection film structure, such as Figure 1 and 2 As shown, the following steps are included:

[0029] An epitaxial layer structure 3 is grown on a substrate, and the substrate may be any substrate, such as a germanium substrate; the epitaxial layer structure 3 may be a single-junction cell structure, or a double-junction cell structure, or a triple-junction cell structure, or other structures, which may be selected according to actual needs, and no specific requirements are made here.

[0030] In some feasible embodiments, the epitaxial layer structure 3 may be an n-type doped gallium arsenide cell, or the epitaxial layer structure 3 may be a p-type doped gallium arsenide cell. The epitaxial layer structure 3 is selected and set according to actual needs, and no specific requirements are made here.

[0031] Before preparing the metal gate electrode 1, a cleaning solution is used to clean the corresponding side of the epitaxial layer structure 3. That is, after the epitaxial layer structure 3 is prepared, a cleaning solution is used to corrode and clean the side of the epitaxial layer structure 3 where the metal gate electrode 1 is to be prepared, so as to remove impurity particles on the side of the epitaxial layer structure 3 so as to prepare the metal gate electrode 1 later.

[0032] The cleaning solution is a hydrochloric acid solution, a sulfuric acid solution or a citric acid solution, wherein the concentration of hydrochloric acid is 20%-50%, the concentration of sulfuric acid is 5%-10%, and the concentration of citric acid is 10%-15%. The selection is made according to actual needs and no specific requirements are made here.

[0033] In some feasible embodiments, preferably, the cleaning solution is a sulfuric acid solution.

[0034] After the side of the epitaxial layer structure 3 is cleaned with a cleaning solution, the side of the epitaxial layer structure 3 is cleaned with pure water to remove the cleaning solution on the side of the epitaxial layer structure 3, and the side of the epitaxial layer structure 3 is blown dry with hot nitrogen to facilitate the subsequent preparation of the transparent conductive anti-reflection film structure 2.

[0035] A transparent conductive anti-reflection film structure 2 is prepared on one side of the epitaxial layer structure 3 (the side cleaned with a cleaning solution): the transparent conductive anti-reflection film structure 2 is prepared on the epitaxial layer structure 3 by evaporation, and the transparent conductive anti-reflection film structure 2 is prepared by evaporation in a high vacuum coating device by electron beam heating. The material of the transparent conductive anti-reflection film structure 2 is placed in the high vacuum coating device, and the material of the transparent conductive anti-reflection film structure 2 is heated and evaporated to form a transparent conductive anti-reflection film structure 2 on the side of the epitaxial layer structure 3.

[0036] In some feasible embodiments, preferably, the vacuum degree of the high vacuum coating equipment is greater than 2.0E10-4Pa.

[0037] The above-mentioned transparent conductive anti-reflection film structure 2 has high light transmittance and high conductivity, and can be used as a transparent electrode on the front of the battery. The transparent conductive anti-reflection film structure 2 includes one or a combination of TCO film, ITO film, IWO film, AZO film, and BZO film. That is, the transparent conductive anti-reflection film structure 2 can be a single-layer film structure. Under this structure, the transparent conductive anti-reflection film structure 2 includes TCO film, ITO film, IWO film, AZO film or BZO film, or the transparent conductive anti-reflection film structure 2 can be a composite film structure, including a multi-layer film structure. The multilayer film structure is arranged in sequence along the epitaxial layer structure 3 to the outside. Under this structure, the transparent conductive anti-reflection film structure 2 includes at least two combinations of TCO film, ITO film, IWO film, AZO film, and BZO film. For example, the transparent conductive anti-reflection film structure 2 can be a TCO film and an ITO film arranged in sequence, or the transparent conductive anti-reflection film structure 2 can be a TCO film, an ITO film, and an AZO film arranged in sequence, or the transparent conductive anti-reflection film structure 2 can be other layer film structures, which can be selected according to actual needs and no specific requirements are made here.

[0038] After the transparent conductive anti-reflection film structure 2 is prepared, before the metal grid electrode 1 is prepared, an electrode pattern area is prepared on the transparent conductive anti-reflection film structure 2 by photolithography, and the metal grid electrode 1 is prepared in the electrode pattern area, that is, a layer of photoresist is coated on the transparent conductive anti-reflection film structure 2, and photolithography is performed at the position where the metal grid electrode 1 needs to be prepared, and exposure, development, etching and other processes are performed. According to the structural design of the battery cell, an opening structure is formed to form an electrode pattern area, and the transparent conductive anti-reflection film structure 2 is exposed in the electrode pattern area to facilitate the subsequent preparation of the metal grid electrode 1. The metal grid electrode 1 is located in the electrode pattern area, and the metal grid electrode 1 is in contact with the transparent conductive anti-reflection film structure 2 for current transmission.

[0039] After the electrode pattern area is formed, a metal grid electrode 1 for welding a solar cell is prepared on the transparent conductive anti-reflection film structure 2. The metal grid electrode 1 is prepared on the transparent conductive anti-reflection film by evaporation. The material of the transparent conductive anti-reflection film structure 2 is placed in a high vacuum coating device, and the material of the metal grid electrode 1 is heated and evaporated to form a metal grid electrode 1 on the transparent conductive anti-reflection film structure 2 at the electrode pattern area.

[0040] The metal gate electrode 1 mentioned above includes one or a combination of gold, germanium, silver, titanium, and nickel, that is, the metal gate electrode 1 can be a single-layer structure, such as the material of the metal gate electrode 1 is gold, or the material of the metal gate electrode 1 is silver, or other metal materials, which are selected according to actual needs, and no specific requirements are made here. Alternatively, the metal gate electrode 1 can also be a multi-layer structure, such as the material of the metal gate electrode 1 is gold-silver, or the material of the metal gate electrode 1 is gold-germanium-silver, or the material of the metal gate electrode 1 is other multiple metal materials, which are selected according to actual needs, and no specific requirements are made here.

[0041] In some feasible embodiments, preferably, the metal grid line electrode 1 is a gold-germanium-silver-gold composite electrode.

[0042] The transparent conductive anti-reflection film structure 2 is combined with the metal grid electrode 1 as the front electrode of the solar cell. The transparent conductive anti-reflection film structure 2 conducts electricity, and the metal grid electrode 1 is used to weld the solar cell. Therefore, the area of ​​the metal grid electrode 1 can be reduced to meet the welding requirements. Compared with the existing metal electrodes, the area of ​​the metal grid electrode 1 is reduced by 50%-70%, which reduces the area occupied by the grid line and improves the incident efficiency of light.

[0043] Before preparing the metal back electrode 4, a cleaning solution is used to clean the corresponding side of the epitaxial layer structure 3, that is, a cleaning solution is used to corrode and clean the side of the epitaxial layer structure 3 where the metal back electrode 4 is to be prepared, so as to remove impurity particles on the side of the epitaxial layer structure 3 so as to prepare the metal back electrode 4 later.

[0044] The cleaning solution is a hydrochloric acid solution, a sulfuric acid solution, or a nitric acid solution, which is selected according to actual needs and no specific requirements are made here.

[0045] In some feasible embodiments, the cleaning solution is a hydrochloric acid solution. Preferably, the cleaning solution is a hydrochloric acid solution with a concentration of 10%-20%.

[0046] After the side of the epitaxial layer structure 3 is cleaned with a cleaning solution, the side of the epitaxial layer structure 3 is cleaned with pure water to remove the cleaning solution on the side of the epitaxial layer structure 3, and the side of the epitaxial layer structure 3 is blown dry with hot nitrogen to facilitate the subsequent preparation of the metal back electrode 4.

[0047] When preparing the metal back electrode 4, the metal back electrode 4 is prepared by evaporation, and the metal back electrode 4 includes one or a combination of gold, germanium, silver, titanium, and nickel, that is, the metal back electrode 4 can be a single-layer structure, such as the material of the metal back electrode 4 is gold, or the material of the metal back electrode 4 is silver, or other metal materials, which are selected according to actual needs, and no specific requirements are made here. Alternatively, the metal back electrode 4 can also be a multi-layer structure, such as the material of the metal back electrode 4 is gold-silver, or the material of the metal back electrode 4 is gold-germanium-silver, or the material of the metal back electrode 4 is other various metal materials, which are selected according to actual needs, and no specific requirements are made here.

[0048] In some feasible embodiments, preferably, the metal back electrode 4 is a gold-germanium-silver composite electrode.

[0049] A solar cell with a transparent conductive anti-reflection film structure, such as Figure 1 and 2 As shown, a solar cell with a transparent conductive anti-reflection film structure is prepared by the above-mentioned method for manufacturing a solar cell, and the cell comprises a metal back electrode 4, an epitaxial layer structure 3, a transparent conductive anti-reflection film structure 2 and a metal grid electrode 1 arranged in sequence from bottom to top, wherein the thickness of the transparent conductive anti-reflection film structure 2 is 40-300nm, the thickness of the metal grid electrode 1 is 1-6um) and the thickness of the metal back electrode 4 is 1-5um.

[0050] The following describes in detail some specific embodiments.

[0051] Embodiment 1

[0052] A method for manufacturing a solar cell having a transparent conductive anti-reflection film structure comprises the following steps:

[0053] Providing a substrate, which is a P-type germanium substrate;

[0054] An epitaxial layer structure 3 is grown on a substrate: the epitaxial layer structure 3 is a gallium arsenide epitaxial layer, PH3 is introduced into a P-type germanium substrate for high temperature diffusion to form an n-type germanium junction, and an AlGaAs / GaAs tunnel junction, a GaInAs middle cell containing 1% In, an AlGaAs / GaInP tunnel junction, a GaInP top cell and a GaAs Cap layer are grown in sequence to complete the growth of a triple-junction solar cell epitaxial wafer. The epitaxial wafer growth process is a prior art and will not be described in detail here;

[0055] A transparent conductive anti-reflection film structure 2 is prepared on one side of the epitaxial layer structure 3: the transparent conductive anti-reflection film structure 2 is an ITO film, and the preparation process of the ITO film includes:

[0056] The epitaxial layer structure 3 is cleaned: a 10% HCl solution is used to clean the side of the n-type doped GaAs epitaxial wafer on which the ITO film is to be prepared for 1 minute, and then the side is cleaned with pure water for 2 minutes, and then taken out and blown dry with hot nitrogen;

[0057] Transparent electrode ITO is evaporated by electron beam method: GaAs epitaxial wafer is placed on the evaporation plate of high vacuum coating equipment, ITO source is placed in the crucible, vacuum chamber door of high vacuum coating equipment is closed, vacuum degree is greater than 5.0E10-4Pa, substrate temperature is 300℃, and ITO film layer with evaporation thickness of 100nm is formed;

[0058] A metal grid electrode 1 for welding solar cells is prepared on a transparent conductive anti-reflection film structure 2: an electrode pattern is produced on the surface of the evaporated ITO by photolithography, and a metal grid electrode 1 is evaporated by electron beam or resistance wire heating. The material of the metal grid electrode 1 is Au-Ge-Ag-Au. Au easily forms an ohmic contact with a semiconductor and grows 100nm. Ag is cheap and has good conductivity. The evaporated thickness is 5um. The thickness of Ge is 50nm. The area of ​​the metal grid electrode 1 is very small and is only used for welding.

[0059] A metal back electrode 4 is prepared on the other side of the epitaxial layer structure 3, including:

[0060] The side of the n-type doped GaAs epitaxial wafer on which the metal back electrode 4 is to be prepared is cleaned with a 10% HCl solution for 1 minute, and then the side is cleaned with pure water for 2 minutes, and then taken out and blown dry with hot nitrogen;

[0061] On the side of the GaAs epitaxial wafer, a metal back electrode 4 is evaporated by electron beam or resistance wire heating. The material of the metal back electrode 4 is Au-Ge-Ag, with a thickness of 100nm for Au, 50nm for Ge, and 3um for Ag.

[0062] A solar cell with a transparent conductive anti-reflection film structure comprises a metal back electrode 4, an epitaxial layer structure 3, a transparent conductive anti-reflection film structure 2 and a metal grid electrode 1 which are arranged in sequence from bottom to top, wherein the transparent conductive anti-reflection film structure 2 is an ITO film, the metal grid electrode 1 material is Au-Ge-Ag-Au, and the metal back electrode 4 is Au-Ge-Ag.

[0063] Embodiment 2

[0064] Compared with the first embodiment, the manufacturing steps of the solar cell with the transparent conductive anti-reflection film structure 2 are the same in this embodiment, except that the manufacturing steps of the transparent conductive anti-reflection film structure 2 are the same. In this embodiment, the transparent conductive anti-reflection film structure 2 is a double-layer film structure, and the other manufacturing steps are the same.

[0065] Specifically, in this embodiment, a method for manufacturing a solar cell having a transparent conductive anti-reflection film structure includes the following steps:

[0066] Providing a substrate, which is a P-type germanium substrate;

[0067] An epitaxial layer structure 3 is grown on a substrate: the epitaxial layer structure 3 is a gallium arsenide epitaxial layer, PH3 is introduced into a P-type germanium substrate for high temperature diffusion to form an n-type germanium junction, and an AlGaAs / GaAs tunnel junction, a GaInAs middle cell containing 1% In, an AlGaAs / GaInP tunnel junction, a GaInP top cell and a GaAs Cap layer are grown in sequence to complete the growth of a triple-junction solar cell epitaxial wafer. The epitaxial wafer growth process is a prior art and will not be described in detail here;

[0068] A transparent conductive anti-reflection film structure 2 is prepared on one side of the epitaxial layer structure 3: the transparent conductive anti-reflection film structure 2 is an ITO film, and the preparation process of the ITO film includes:

[0069] The epitaxial layer structure 3 is cleaned by using 10% H 2 SO 4 The solution was used for cleaning for 1 minute, and then the side was cleaned with pure water. After cleaning for 2 minutes, it was taken out and blown dry with hot nitrogen.

[0070] Transparent electrode ITO is evaporated by electron beam method: GaAs epitaxial wafer is placed on the evaporation plate of high vacuum coating equipment, ITO source is placed in the crucible, vacuum chamber door of high vacuum coating equipment is closed, vacuum degree is greater than 5.0E10-4Pa, substrate temperature is 300℃, and ITO film layer with evaporation thickness of 100nm is formed;

[0071] When preparing the transparent conductive anti-reflection film structure 2, after the ITO film is prepared, the AZO film is prepared on the ITO film. The AZO film is prepared by using a ceramic target of ZnO:Al2O3 oxide and a sputtering device. The doping ratio of the ceramic target is 1wt.%, and the flow rate of the working gas Ar during the sputtering process is controlled at 300°C, the vacuum degree is 5.0E10-4Pa, the sputtering power is about 60W, and the thickness of the AZO film is 50-200nm.

[0072] A metal grid electrode 1 for welding solar cells is prepared on a transparent conductive anti-reflection film structure 2: an electrode pattern is produced on the surface of the evaporated ITO by photolithography, and the metal grid electrode 1 is evaporated by electron beam or resistance wire heating. The material of the metal grid electrode 1 is Au-Ge-Ag-Au. Au easily forms ohmic contact with semiconductors and grows at 100nm. Ag is cheap and has good conductivity. The evaporated thickness is 5um. The thickness of Ge is 50nm. The area of ​​the metal grid electrode 1 is very small and is only used for welding.

[0073] A metal back electrode 4 is prepared on the other side of the epitaxial layer structure 3, including:

[0074] On the side of the n-type doped GaAs epitaxial wafer where the metal back electrode 4 is to be prepared, a 10% concentration of H 2 SO 4 The solution was cleaned for 1 minute, and then the side was cleaned with pure water for 2 minutes, and then taken out and blown dry with hot nitrogen;

[0075] On the other side of the GaAs epitaxial wafer, a metal back electrode 4 is evaporated by electron beam or resistance wire heating. The material of the metal back electrode 4 is Au-Ge-Ag. The thickness of Au is 100nm, the thickness of Ge is 50nm, and the thickness of Ag is 3um.

[0076] A solar cell with a transparent conductive anti-reflection film structure 2 comprises a metal back electrode 4, an epitaxial layer structure 3, a transparent conductive anti-reflection film structure 2 and a metal grid electrode 1 which are arranged in sequence from bottom to top, wherein the transparent conductive anti-reflection film structure 2 is an ITO film and an AZO film, the metal grid electrode 1 is made of Au-Ge-Ag-Au, and the metal back electrode 4 is Au-Ge-Ag.

[0077] Due to the adoption of the above technical solution, the solar cell has a transparent conductive anti-reflection film structure, which is located on one side of the epitaxial layer structure. A metal grid electrode is arranged on the transparent conductive anti-reflection film structure, which is only used for welding with the solar cell. The metal grid electrode is combined with the transparent conductive anti-reflection film, which is different from the conventional electrode structure composed of a main grid and a sub-grid. The metal grid electrode does not have a sub-grid but only has a main grid, and compared with the main grid of the conventional metal grid electrode, its area can be reduced to meet the welding use requirements. The transparent conductive anti-reflection film can conduct electricity, reduce the grid line ratio (only retain the main grid for welding) and improve the incident efficiency of light. Compared with the metal grid as the front electrode, the transparent conductive anti-reflection film and the metal grid as the front electrode, the transparent conductive anti-reflection film has high light transmittance and high conductivity, which can increase the conductivity of the metal grid, the transparent conductive anti-reflection film has high electron mobility, is easy to form ohmic contact with the surface of the epitaxial layer structure and the metal, reduces the surface contact resistance, is simple to prepare, has low cost, and is conducive to industrial application.

[0078] The embodiments of the present invention are described in detail above, but the contents described are only preferred embodiments of the present invention and cannot be considered to limit the scope of implementation of the present invention. All equivalent changes and improvements made within the scope of the present invention should still fall within the scope of the patent coverage of the present invention.

Claims

1. A method for manufacturing a solar cell having a transparent conductive anti-reflection film structure, characterized in that: The following steps are involved: Growing and preparing an epitaxial layer structure on a substrate; Prepare a transparent conductive anti-reflection film structure on one side of the epitaxial layer structure; Preparing metal grid electrodes for welding solar cells on a transparent conductive anti-reflection film structure; A metal back electrode is prepared on the other side of the epitaxial layer structure.

2. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to claim 1, characterized in that: The transparent conductive anti-reflection film structure is prepared on the epitaxial layer structure by evaporation, and the transparent conductive anti-reflection film structure includes one or a combination of TCO film, ITO film, IWO film, AZO film, and BZO film.

3. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to claim 2, characterized in that: The transparent conductive anti-reflection film structure is prepared by evaporation in a high vacuum coating device using electron beam heating, and the vacuum degree of the high vacuum coating device is greater than 2.0E10-4Pa.

4. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to any one of claims 1 to 3, characterized in that: The metal grid line electrode is prepared on the transparent conductive anti-reflection film by evaporation, and the metal grid line electrode includes one or a combination of gold, germanium, silver, titanium and nickel.

5. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to claim 4, characterized in that: The metal grid line electrode is a gold-germanium-silver-gold composite electrode.

6. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to claim 5, characterized in that: Before preparing the metal grid line electrode, an electrode pattern area is prepared on the transparent conductive anti-reflection film structure by photolithography, and the metal grid line electrode is prepared in the electrode pattern area.

7. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to any one of claims 1 to 3 and 5 to 6, characterized in that: The metal back electrode is prepared by evaporation, and the metal back electrode includes one or a combination of gold, germanium, silver, titanium, and nickel.

8. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to claim 7, characterized in that: The metal back electrode is a gold-germanium-silver composite electrode.

9. The method for manufacturing a solar cell having a transparent conductive anti-reflection film structure according to any one of claims 1 to 3, 5 to 6 and 8, characterized in that: Before preparing the metal grid electrode or the metal back electrode, a cleaning solution is used to clean the corresponding side surfaces of the epitaxial layer structure. The cleaning solution is a hydrochloric acid solution, a sulfuric acid solution, or a nitric acid solution.

10. A solar cell having a transparent conductive anti-reflection film structure, characterized in that: The solar cell having a transparent conductive anti-reflection film structure is prepared by the method for manufacturing the solar cell having a transparent conductive anti-reflection film structure as described in any one of claims 1 to 9, wherein the solar cell comprises a metal back electrode, an epitaxial layer structure, a transparent conductive anti-reflection film structure and a metal grid electrode arranged in sequence from bottom to top.

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