Optical memristor

Abstract

The application discloses an optical memristor, relates to the fields of photonic integrated circuits and optical computing, and comprises a waveguide layer, a ferroelectric film layer, an electrode structure and a substrate; the ferroelectric film layer is located on the upper surface of the substrate; the waveguide layer and the electrode structure are both located on the upper surface of the ferroelectric film layer; the waveguide layer is used for propagating an incident light signal and performing amplitude modulation on the incident light signal; the electrode structure is used for applying an electric field to the ferroelectric film layer; and the ferroelectric film layer is used for performing phase modulation on the light signal propagating in the waveguide layer under the action of the electric field. The ferroelectric material is used as an optical switch of the optical memristor, high-efficiency modulation of light phase is realized by using the non-volatility and high electro-optic effect of the ferroelectric material, and the optical memristor has the advantages of low energy consumption and fast response.

Description

Technical Field

[0001] This application relates to the fields of photonic integrated circuits and optical computing, and in particular to an optical memristor. Background Technology

[0002] In the semiconductor industry, after nearly 50 years of development, processing technology has gradually improved from 180nm to the current 5nm, and even the 3nm process is under exploration, enabling rapid development of integrated circuit technology and significantly improving the performance of electrical computing systems. However, with the advancement of technology, the bottlenecks encountered by traditional electronic chips are becoming increasingly apparent: the continuous reduction in transistor size has made the power consumption and heat dissipation problems of traditional electronic chips increasingly prominent; in addition, traditional electronic chips have consistently failed to meet the computing speed requirements of AI technology, which involves complex tasks and huge computational demands. The limitations of traditional electronic chips restrict the application and development of traditional electrical computing systems in high-speed, low-power, and large-scale communication.

[0003] To address these challenges, optical memristors, with their high-performance characteristics, have been chosen as an optimization solution, particularly in the field of optical processing chips based on neuromorphic computing networks. Optical memristors offer advantages such as high computing speed, strong anti-interference capabilities, and high parallel processing capabilities, while exhibiting virtually no energy loss, thus avoiding heat generation during prolonged operation. However, current optical memristor optical switches rely on modulation materials with thermo-optic or electro-optic effects. The modulation of these materials is volatile and energy-intensive, thus limiting the efficiency and development of optical neuromorphic computing networks. Summary of the Invention

[0004] The purpose of this application is to provide an optical memristor that uses ferroelectric materials as optical switches, utilizing their non-volatility and high electro-optic effect to achieve efficient modulation of optical phase and amplitude, thereby reducing the power consumption of the optical memristor and improving the response speed.

[0005] To achieve the above objectives, this application provides an optical memristor, comprising:

[0006] The device comprises a waveguide layer, a ferroelectric thin film layer, an electrode structure, and a substrate; the ferroelectric thin film layer is located on the upper surface of the substrate; both the waveguide layer and the electrode structure are located on the upper surface of the ferroelectric thin film layer.

[0007] The waveguide layer is used to propagate the incident light signal and to modulate the amplitude of the incident light signal;

[0008] The electrode structure is used to apply an electric field to the ferroelectric thin film layer;

[0009] The ferroelectric thin film layer is used to perform phase modulation on the optical signal propagating in the waveguide layer under the action of the electric field.

[0010] Optionally, the waveguide layer includes a beam splitter waveguide, a first channel waveguide, a second channel waveguide, and a beam combiner waveguide;

[0011] The input terminals of the first channel waveguide and the second channel waveguide are both connected to the beam splitter waveguide; the output terminals of the first channel waveguide and the second channel waveguide are both connected to the beam combiner waveguide.

[0012] The beam-splitting waveguide is used to split the incident optical signal into a first optical signal and a second optical signal; the first optical signal and the second optical signal are coherent light;

[0013] The first channel waveguide and the second channel waveguide are used to propagate the first optical signal and the second optical signal, respectively;

[0014] The ferroelectric thin film layer is used to perform phase modulation on the first optical signal under the action of the electric field to obtain a first modulated optical signal;

[0015] The first modulated optical signal and the second optical signal interfere in the beam combiner waveguide to modulate the amplitude of the incident optical signal.

[0016] Optionally, the electrode structure includes a first electrode structure and a second electrode structure, wherein the first electrode structure and the second electrode structure are located on both sides of the first channel waveguide, respectively.

[0017] Optionally, the ferroelectric thin film layer is also used to perform multi-level phase modulation of the first optical signal under the action of electric fields of different intensities.

[0018] Optionally, the waveguide layer is a ridge waveguide structure.

[0019] Optionally, the waveguide layer is made of a semiconductor material or a ferroelectric material.

[0020] Optionally, the substrate is made of a semiconductor material.

[0021] Optionally, the ferroelectric thin film layer and the substrate are connected by bonding or adhesive processes.

[0022] Optionally, the optical memristor further includes a cladding layer;

[0023] The cladding layer covers the upper surface of the waveguide layer and encloses the waveguide layer, the ferroelectric thin film layer, and the electrode structure.

[0024] Optionally, the cladding material is SiO2.

[0025] According to the specific embodiments provided in this application, this application has the following technical effects:

[0026] This application provides an optical memristor that uses ferroelectric materials as optical switches. By utilizing their non-volatility and high electro-optic effect, it achieves efficient modulation of optical phase and amplitude, while reducing the power consumption of the optical memristor and improving the response speed. Attached Figure Description

[0027] To more clearly illustrate the technical solutions in the embodiments of this application or related technologies, the drawings used in the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort.

[0028] Figure 1 This is a schematic diagram of the structure of an optical memristor in one embodiment of this application;

[0029] Figure 2 This is a schematic diagram of the waveguide layer structure of an optical memristor in one embodiment of this application;

[0030] Figure 3 This is a schematic diagram showing the electrode structure of an optical memristor in one embodiment of this application;

[0031] Figure 4 This is a schematic diagram of the optical signal multi-level phase modulation result of an optical memristor in one embodiment of this application.

[0032] Reference numerals: 101-waveguide layer, 102-ferroelectric thin film layer, 103-electrode structure, 104-substrate, 201-beam splitting waveguide, 202-first channel waveguide, 203-second channel waveguide, 204-beam combining waveguide, 301-first electrode structure, 302-second electrode structure. Detailed Implementation

[0033] The technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only some embodiments of this application, and not all embodiments. Based on the embodiments of this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0034] This application proposes an optical memristor that uses ferroelectric materials as optical switches. Utilizing their non-volatility and high electro-optic effect, it achieves efficient modulation of optical phase and amplitude, while simultaneously reducing the power consumption and improving the response speed. By changing the electric field strength applied to the ferroelectric material, the optical refractive index of the ferroelectric material can be altered, enabling multi-level phase modulation of the optical signal and further achieving multi-level amplitude modulation of the incident light signal.

[0035] To make the above-mentioned objectives, features and advantages of this application more apparent and understandable, the application will be further described in detail below with reference to the accompanying drawings and specific embodiments.

[0036] In one exemplary embodiment, such as Figure 1 As shown, an optical memristor is provided, comprising: a waveguide layer 101, a ferroelectric thin film layer 102, an electrode structure 103, and a substrate 104. The ferroelectric thin film layer 102 is located on the upper surface of the substrate 104; both the waveguide layer 101 and the electrode structure 103 are located on the upper surface of the ferroelectric thin film layer 102. The waveguide layer 101 is used to propagate incident light signals and to modulate the amplitude of the incident light signals; the electrode structure 103 is used to apply an electric field to the ferroelectric thin film layer 102; the ferroelectric thin film layer 102 is used to perform phase modulation of the light signals propagating in the waveguide layer 101 under the action of the electric field.

[0037] The waveguide layer 101 is made of a semiconductor material or a ferroelectric material. In an exemplary embodiment, the waveguide layer 101 is made of Si or titanium lead magnesium niobate (PMN-PT). The waveguide material is processed using micro- and nano-fabrication techniques (such as etching) to form a ridge waveguide structure. In an exemplary embodiment, the ridge waveguide structure has a height of 160 nm and a width of 800 nm.

[0038] In one exemplary embodiment, the ferroelectric thin film layer 102 is made of titanium lead magnesium niobate (PMN-PT) and has a thickness of 200 nm. The ferroelectric thin film layer 102 is planarized using chemical mechanical polishing and reactive ion etching processes.

[0039] The substrate 104 is made of a semiconductor material and is connected to the ferroelectric thin film layer 102 by bonding or adhesive processes. In an exemplary embodiment, the substrate material is SOI with a height of 220 nm.

[0040] In one exemplary embodiment, such as Figure 2 As shown, waveguide layer 101 includes a beam splitter waveguide 201, a first channel waveguide 202, a second channel waveguide 203, and a beam combiner waveguide 204. The input terminals of both the first channel waveguide 202 and the second channel waveguide 203 are connected to the beam splitter waveguide 201; the output terminals of both the first channel waveguide 202 and the second channel waveguide 203 are connected to the beam combiner waveguide 204. Waveguide layer 101 has interference capabilities, enabling non-volatile amplitude modulation of the incident light signal.

[0041] The beam-splitting waveguide 201 has a beam-splitting function, which can split a single incident light signal into two coherent light signals and output them. In an exemplary embodiment, the beam-splitting ratio of the beam-splitting waveguide 201 is 50:50. The incident light signal is input to the optical memristor through waveguide coupling, including end-face coupling and grating coupling. The beam-splitting waveguide 201 splits the incident light signal into a first light signal and a second light signal. The first light signal and the second light signal are coherent light and propagate in the first channel waveguide 202 and the second channel waveguide 203, respectively. The ferroelectric thin film layer 102 modulates the phase of the first light signal under the action of an electric field to obtain a first modulated light signal. The first modulated light signal and the second light signal interfere in the beam-combining waveguide 204 to achieve amplitude modulation of the incident light signal.

[0042] In one exemplary embodiment, such as Figure 3 As shown, the electrode structure 103 includes a first electrode structure 301 and a second electrode structure 302, which are located on both sides of the first channel waveguide 202.

[0043] The first electrode structure 301 and the second electrode structure 302 are deposited on the upper surface of the ferroelectric thin film layer 102. In an exemplary embodiment, the spacing between the first electrode structure 301 and the second electrode structure 302 is 5 μm. The electrode structure 103 adopts an Au / Ti structure to improve the adsorption and stability of the electrode material.

[0044] The ferroelectric thin film layer 102 is also used for multi-level phase modulation of the first optical signal under the action of electric fields of different intensities. An applied electric field can change the polarization state of the ferroelectric material, and the change in polarization state leads to a change in the optical refractive index of the ferroelectric material, thereby achieving phase modulation of the optical signal without static power consumption. Due to the non-volatile nature of the ferroelectric material, the phase modulation result of the optical signal still exists after the electric field is removed. By applying electric fields of different intensities, multi-level phase modulation of the optical signal can be achieved. In an exemplary embodiment, such as... Figure 4 As shown, changing the intensity of the applied electric field can achieve multi-level phase modulation of the optical signal; changing the direction of the applied electric field can achieve writing and erasing of optical signal data.

[0045] In one exemplary embodiment, the optical memristor further includes a cladding layer covering the upper surface of the waveguide layer 101, and enclosing the waveguide layer 101, the ferroelectric thin film layer 102, and the electrode structure 103. The cladding material is SiO2. In one exemplary embodiment, the cladding thickness is 2 μm.

[0046] This application also provides an application scenario in which the aforementioned optical memristor is used. Specifically, the optical memristor provided in this embodiment can be applied in an information processing scenario. The information processing scenario includes an information acquisition stage, a data processing stage, and a result output stage. The information acquisition stage acquires the raw information data to be processed; the data processing stage processes the raw data, including storage and calculation, and finally obtains the analysis results, which are output by the output stage. The optical memristor provided in this embodiment is applied in the data processing stage. Specifically, during data processing, optoelectronic technology can be used to control the seamless conversion of photoelectric signals, realizing the storage and calculation of photonic data.

[0047] The technical features of the above embodiments can be combined in any way. For the sake of brevity, not all possible combinations of the technical features in the above embodiments are described. However, as long as there is no contradiction in the combination of these technical features, they should be considered to be within the scope of this specification.

[0048] This document uses specific examples to illustrate the principles and implementation methods of this application. The descriptions of the above embodiments are only for the purpose of helping to understand the methods and core ideas of this application. Furthermore, those skilled in the art will recognize that, based on the ideas of this application, there will be changes in the specific implementation methods and application scope. Therefore, the content of this specification should not be construed as a limitation of this application.

Claims

1. An optical memristor, characterized in that, The optical memristor includes: a waveguide layer, a ferroelectric thin film layer, an electrode structure, and a substrate; the ferroelectric thin film layer is located on the upper surface of the substrate; both the waveguide layer and the electrode structure are located on the upper surface of the ferroelectric thin film layer; the substrate is made of SOI. The waveguide layer is used to propagate the incident light signal and to modulate the amplitude of the incident light signal; the material of the waveguide layer is Si or lead titanium magnesium niobate. The electrode structure is used to apply an electric field to the ferroelectric thin film layer; the electrode structure adopts an Au / Ti structure. The ferroelectric thin film layer is used to perform phase modulation on the optical signal propagating in the waveguide layer under the action of the electric field; the material of the ferroelectric thin film layer is lead titanium magnesium niobate; The waveguide layer includes a beam splitter waveguide, a first channel waveguide, a second channel waveguide, and a beam combiner waveguide; The input terminals of the first channel waveguide and the second channel waveguide are both connected to the beam splitter waveguide; the output terminals of the first channel waveguide and the second channel waveguide are both connected to the beam combiner waveguide. The beam-splitting waveguide is used to split the incident optical signal into a first optical signal and a second optical signal; the first optical signal and the second optical signal are coherent light; The first channel waveguide and the second channel waveguide are used to propagate the first optical signal and the second optical signal, respectively; The ferroelectric thin film layer is used to perform phase modulation on the first optical signal under the action of the electric field to obtain a first modulated optical signal; The first modulated optical signal and the second optical signal interfere in the beam combiner waveguide to modulate the amplitude of the incident optical signal; The ferroelectric thin film layer is also used to perform multi-level phase modulation on the first optical signal under the action of electric fields of different intensities, and to realize the writing and erasing of the first optical signal by changing the direction of the electric field; The optical memristor also includes a cladding layer; The cladding layer covers the upper surface of the waveguide layer and encloses the waveguide layer, the ferroelectric thin film layer, and the electrode structure.

2. The optical memristor according to claim 1, characterized in that, The electrode structure includes a first electrode structure and a second electrode structure, which are located on both sides of the first channel waveguide, respectively.

3. The optical memristor according to claim 1, characterized in that, The waveguide layer is a ridge waveguide structure.

4. The optical memristor according to claim 1, characterized in that, The substrate is made of semiconductor material.

5. The optical memristor according to claim 1, characterized in that, The ferroelectric thin film layer and the substrate are connected by bonding or adhesive processes.

6. The optical memristor according to claim 1, characterized in that, The cladding material is SiO2.

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