Liquid crystal display

Abstract

The invention provides a liquid crystal display. The liquid crystal display comprises a back plate; a light emitting diode chip; the diffusion plate is arranged on the light emitting diode chip; an optical film disposed on the diffusion plate; and a liquid crystal display panel. The liquid crystal display panel comprises an array substrate; the color film substrate and the array substrate are arranged in a box-to-box manner; the color film substrate and the array substrate are pasted through the rubber frame to form a box body space, and the width of the rubber frame is gradually increased from one side of the color film substrate to one side of the array substrate in the section direction of the liquid crystal panel; and the liquid crystal layer is arranged in the box body space. The display quality of the liquid crystal display can be improved.

Description

Technical Field

[0001] The present application relates to the field of liquid crystal display, and in particular to a liquid crystal display. Background Art

[0002] With the development of display technology, flat display devices such as liquid crystal displays (LCD) have been widely used in various consumer electronic products such as mobile phones, televisions, personal digital assistants, digital cameras, laptops, desktop computers, etc. due to their advantages of high image quality, power saving, thin body and wide application range, becoming the mainstream of display devices.

[0003] Borderless displays are favored by customers due to their superior appearance, but they are prone to light leakage due to the lack of borders, and may cause problems with the side packaging of liquid crystal molecules. In high humidity environments, water vapor is easily introduced into the sides of borderless displays, affecting the quality of the liquid crystal display. Summary of the invention

[0004] In view of the above-mentioned defects of the prior art, the present application proposes a liquid crystal display, which can improve the quality of the liquid crystal display.

[0005] To achieve the above-mentioned purpose and its objectives, the present application proposes a liquid crystal display, comprising:

[0006] Back panel;

[0007] A light emitting diode chip is arranged on the bottom wall of the back plate, wherein the light emitting diode chip comprises a substrate, a light emitting epitaxial layer arranged on the substrate, and a light conversion layer arranged on the light emitting side of the light emitting diode chip;

[0008] A diffusion plate, arranged on the light emitting diode chip;

[0009] an optical film disposed on the diffusion plate; and

[0010] A liquid crystal display panel is provided on the optical film, and the liquid crystal display panel comprises:

[0011] An array substrate;

[0012] A color filter substrate is arranged in a box with the array substrate;

[0013] A glue frame is used to adhere the color filter substrate and the array substrate to form a box space, and the width of the glue frame gradually increases from a side close to the color filter substrate to a side close to the array substrate in the cross-sectional direction of the liquid crystal display panel; and

[0014] A liquid crystal layer is arranged in the box space;

[0015] Wherein, in the cross-sectional direction of the liquid crystal display panel, on the side close to the liquid crystal layer, the side wall of the plastic frame is arranged perpendicular to the plane where the array substrate is located;

[0016] In the cross-sectional direction of the liquid crystal display panel, on the side away from the liquid crystal layer, the angle between the side wall of the plastic frame and the array substrate is in the range of 75° to 89°;

[0017] In the display surface direction of the liquid crystal display panel, the width of the plastic frame gradually increases from the top side close to the liquid crystal display panel to the bottom side close to the liquid crystal display panel.

[0018] In one embodiment of the present invention, a buffer layer is further disposed on the substrate, and the buffer layer is an aluminum nitride layer or an aluminum gallium nitride layer.

[0019] In one embodiment of the present invention, in the display surface direction of the liquid crystal display panel, the width of the plastic frame at the top of the liquid crystal display panel is smaller than the width of the plastic frame at the bottom of the liquid crystal display panel.

[0020] In one embodiment of the present invention, a waterproof film is provided on a side of the rubber frame away from the liquid crystal layer. In the cross-sectional direction of the liquid crystal display panel, the thickness of the waterproof film remains unchanged. In the display surface direction of the liquid crystal display panel, the inner side of the waterproof film is in contact with the rubber frame, and the outer side forms a rectangle that coincides with the outline of the liquid crystal display panel.

[0021] In one embodiment of the present invention, an anti-reflection plate is disposed between the color filter substrate and the liquid crystal layer.

[0022] In one embodiment of the present invention, the refractive index of the antireflection plate is 1.55-1.7.

[0023] In one embodiment of the present invention, a light shielding layer is provided between the anti-reflection plate and the plastic frame, and the light shielding layer covers the plastic frame and the waterproof film.

[0024] In one embodiment of the present invention, the substrate is a transparent substrate.

[0025] In one embodiment of the present invention, the light-emitting epitaxial layer includes a first semiconductor layer, a light-emitting layer, and a second semiconductor layer which are stacked.

[0026] In one embodiment of the present invention, the light-emitting epitaxial layer adopts a modulation-doped GaN / AlGaN superlattice structure.

[0027] In summary, the present application proposes a liquid crystal display that improves the quality of the liquid crystal display in many aspects. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 : Schematic diagram of the light emitting diode chip in this application.

[0029] Figure 2 :This application Figure 1 Schematic diagram of the light-emitting epitaxial layer.

[0030] Figure 3 : A schematic diagram of the structure of the liquid crystal display panel in the cross-sectional direction in the present application.

[0031] Figure 4 : A schematic diagram of the structure of the liquid crystal display panel of the present application in the display direction.

[0032] Figure 5 : A schematic diagram of the structure of the liquid crystal display in this application. DETAILED DESCRIPTION

[0033] The following describes the implementation of the present application through specific examples, and those skilled in the art can easily understand other advantages and effects of the present application from the contents disclosed in this specification. The present application can also be implemented or applied through other different specific implementations, and the details in this specification can also be modified or changed in various ways based on different viewpoints and applications without departing from the spirit of the present application.

[0034] It should be noted that the illustrations provided in this embodiment only illustrate the basic concept of the present application in a schematic manner, and therefore the drawings only show components related to the present application rather than being drawn according to the number, shape and size of components in actual implementation. In actual implementation, the type, quantity and proportion of each component may be changed arbitrarily, and the component layout may also be more complicated.

[0035] like Figure 1 As shown, this embodiment provides a light emitting diode chip 100, which includes a substrate 101, a light emitting epitaxial layer 102 disposed on the substrate 101, and a light conversion layer 108 disposed on the light emitting side of the light emitting diode chip 100. The light conversion layer 108 converts the light emitted by the light emitting epitaxial layer 102 into light of a specific color. Therefore, the light emitting diode chip 100 can be used in a liquid crystal display 300, and can also be used in a light emitting diode display.

[0036] like Figure 1 As shown in the figure of an embodiment of the present application, in the light emitting diode chip 100, the material of the substrate 101 includes but is not limited to sapphire, aluminum nitride, gallium nitride, silicon, silicon carbide, and the substrate 101 can be a planar substrate or a cased substrate. In the present application, the substrate 101 is a transparent substrate.

[0037] like Figure 1 to Figure 2As shown, in one embodiment of the present application, the light-emitting epitaxial layer 102 includes a first semiconductor layer 1021, a light-emitting layer 1022, and a second semiconductor layer 1023 that are stacked, the first semiconductor layer 1021 is arranged on the substrate 101, the light-emitting layer 1022 is arranged on the first semiconductor layer 1021, and the second semiconductor layer 1023 is arranged on the light-emitting layer 1022. Among them, the first semiconductor layer 1021 and the second semiconductor layer 1023 are semiconductor layers of different types, one of which is a P-type semiconductor layer and the other is an N-type semiconductor layer. In the P-type semiconductor layer, holes provided for the light-emitting layer 1022 are provided, and in the N-type semiconductor layer, electrons provided for the light-emitting layer 1022 are provided. When a voltage is applied to the first semiconductor layer 1021 and the second semiconductor layer 1023, the holes in the P-type semiconductor layer and the photons in the N-type semiconductor layer are recombined in the light-emitting layer 1022, and then energy is emitted in the form of photons, thereby making the light-emitting epitaxial layer 102 structure emit light.

[0038] like Figure 1 to Figure 2 As shown, in the present application, the specific types of the first semiconductor layer 1021 and the second semiconductor layer 1023 are not limited. In the present embodiment, the first semiconductor layer 1021 is an N-type semiconductor layer, and the second semiconductor layer 1023 is a P-type semiconductor layer. In other embodiments, the first semiconductor layer 1021 is a P-type semiconductor layer, and the second semiconductor layer 1023 is an N-type semiconductor layer. In some embodiments, in order to improve the display effect of the light-emitting diode, multiple layers of other functional layers are provided in the light-emitting epitaxial layer 102 to reduce the defects of the semiconductor layer and improve the brightness of the light-emitting epitaxial layer 102.

[0039] like Figure 1 to Figure 2 As shown, in some embodiments, a buffer layer (not shown) is further disposed on the substrate 101, and the buffer layer is, for example, an aluminum nitride layer or an aluminum gallium nitride layer, to improve the lattice defects between the substrate 101 and the gallium nitride layer.

[0040] like Figure 1 to Figure 2As shown, in one embodiment of the present application, the first semiconductor layer 1021 is an N-type semiconductor layer with more electrons. The first semiconductor layer 1021 is doped with donor impurities, such as silicon (Si) or tellurium (Te). In this embodiment, the first semiconductor layer 1021 includes an N-type gallium nitride (GaN) layer. The light-emitting layer 1022 can be a quantum well light-emitting layer 1022, or it can be an intrinsic semiconductor layer or a low-doped semiconductor layer. In this embodiment, the light-emitting layer 1022 includes a potential well layer and a potential barrier layer that are periodically stacked. The material of the potential barrier layer includes, for example, a GaN / AlGaN superlattice structure, and the material of the potential well layer is, for example, InGaN. The light-emitting layer 1022 adopts a modulation-doped GaN / AlGaN superlattice structure, which can effectively guide the impact current, so that the pulse current is conducted in the lateral direction in the two-dimensional electron gas of the GaN / AlGaN structure, so that the density distribution of the pulse current is more uniform, which can effectively improve the recombination efficiency of electrons and holes. The second semiconductor layer 1023 is a P-type semiconductor layer with more holes, and the second semiconductor layer 1023 is doped with acceptor impurities, such as magnesium (Mg) or zinc (Zn). In this embodiment, the second semiconductor layer 1023 includes a P-type gallium nitride (GaN) layer.

[0041] like Figure 1 to Figure 2 As shown, in the present application, the wavelength of the light emitted by the light-emitting epitaxial layer 102 can be adjusted by adjusting the content of aluminum in gallium nitride. In one embodiment of the present application, the first semiconductor layer 1021 can also include an N-type aluminum gallium nitride (AlGaN) layer, and the N-type aluminum gallium nitride (AlGaN) layer is arranged between the N-type gallium nitride layer and the light-emitting layer 1022. The second semiconductor layer 1023 can also include a P-type aluminum gallium nitride (AlGaN) layer, and the P-type aluminum gallium nitride (AlGaN) layer is arranged between the P-type gallium nitride layer and the light-emitting layer 1022. In the present application, the wavelength range of the light emitted by the light-emitting epitaxial layer 102 is, for example, 220nm to 420nm. That is, the light-emitting epitaxial layer 102 can emit purple light and ultraviolet light. The light within this wavelength range has a short wavelength and a high energy level, and can be completely absorbed by the light conversion layer 108. And the wavelength of the formed light-emitting diode is short, and it will not cause mixed light. In the present application, the half-wave width of the light emitted by the light-emitting epitaxial layer 102 is less than or equal to 10 nm, that is, FHWM≤10 nm. And the standard deviation of the wavelength of the light emitted by each light-emitting diode chip 100 is less than or equal to 2.

[0042] like Figure 1 to Figure 2 As shown, in the present application, an isolation trench is arranged at the periphery of the light-emitting epitaxial layer 102. The isolation trench is arranged at the periphery of the light-emitting epitaxial layer 102, that is, there is a gap between the edge of the light-emitting epitaxial layer 102 and the edge of the substrate 101, and the isolation trench is formed at the periphery of the light-emitting epitaxial layer 102.

[0043] like Figure 1 As shown, in one embodiment of the present application, a transparent conductive layer 103 is provided on the surface of the second semiconductor layer 1023. Metal oxide or alloy oxide can be evaporated or sputtered on the second semiconductor layer 1023 as the transparent conductive layer 103. Specifically, it can be indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO) or azo (AzO), and can also be an oxide of an alloy such as nickel gold (NiAu) and ruthenium gold (RuAu). Among them, the thickness of the transparent conductive layer 103 is, for example, 5nm to 300nm. When the electrode contacts the transparent conductive layer 103, it can produce a good conductive effect with the electrode.

[0044] like Figure 1 As shown, in one embodiment of the present application, an insulating layer 104 is provided on the surface of the transparent conductive layer 103. The insulating layer 104 can be made of materials such as silicon dioxide (SiO2), aluminum oxide (Al2O3), silicon nitride (SiNx), magnesium fluoride (MgF), or zinc oxide (ZnO). On the first epitaxial structure, the thickness of the insulating layer 104 is, for example, 100nm to 600nm. Forming a thicker insulating layer 104 can prevent damage to the inside of the light-emitting diode during welding and block the penetration of solder.

[0045] like Figure 1 As shown, in one embodiment of the present application, a reflective layer 105 is provided on the surface of the insulating layer 104 and in the isolation grooves. The reflective layer 105 can reflect the light emitted toward the second semiconductor layer 1023 and the light emitted toward the light-emitting epitaxial layer 102, and emit the light toward the first semiconductor layer 1021. When the isolation grooves are covered by the reflective layer 105, all the light emitted by the light-emitting epitaxial layer 102 can be emitted from the first semiconductor layer 1021, thereby increasing the brightness of the light-emitting diode chip 100. Specifically, the reflective layer 105 can be a distributed Bragg reflection (DBR) reflective layer 105, or a silver reflective layer 105 or an aluminum reflective layer 105. The thickness of the reflective layer 105 is, for example, 300nm to 5000nm.

[0046] like Figure 1As shown, in one embodiment of the present application, a first electrode 106 electrically connected to the first semiconductor layer 1021 and a second electrode 107 electrically connected to the second semiconductor layer 1023 are also provided. In the embodiment, the first electrode 106 includes a first connection electrode 1061 connected to the first semiconductor layer 1021, and the second electrode 107 includes a second connection electrode 1071 connected to the second semiconductor layer 1023. Among them, one end of the first connection electrode 1061 extends into the first semiconductor layer 1021 and is connected to the first semiconductor layer 1021, and the other end extends into the reflective layer 105. One end of the second connection electrode 1071 is connected to the transparent conductive layer 103, and the other end extends into the reflective layer 105. The first connection electrode 1061 and the second connection electrode 1071 can be made of metal or alloy with good conductive properties. The first connection electrode 1061 is made of, for example, Ni, Au or an alloy thereof. The second connection electrode 1071 is made of, for example, Ti, Al, Ni, Au or an alloy of two or more thereof.

[0047] like Figure 1 As shown, in one embodiment of the present application, the first electrode 106 further includes a first welding electrode 1062 , and the second electrode 107 further includes a second welding electrode 1072 . The first welding electrode 1062 is connected to the first connection electrode 1061 , and the second welding electrode 1072 is connected to the second connection electrode 1071 .

[0048] like Figure 1 As shown, in one embodiment of the present application, the first connection electrode 1061 and the second connection electrode 1071 are coated in the reflective layer 105, one end of the first welding electrode 1062 covers part of the first connection electrode 1061, and the other end extends out of the reflective layer 105. One end of the second welding electrode 1072 covers part of the second connection electrode 1071, and the other end extends out of the reflective layer 105. The first welding electrode 1062 and the second welding electrode 1072 may include a multi-layer metal stack, for example, including one, two or more of a chromium (Cr) metal layer, a titanium (Ti) metal layer, an aluminum (Al) metal layer, a platinum (Pt) metal layer, a nickel (Ni) metal layer, a gold (Au) metal layer, a tin (Sn) metal layer, etc. The thickness of the first welding electrode 1062 and the second welding electrode 1072 is, for example, 1um to 50um.

[0049] like Figure 1As shown, in one embodiment of the present application, a light conversion layer 108 is provided on one side of the substrate 101 relative to the light-emitting epitaxy, and the light conversion layer 108 can convert light into a desired color. The light conversion layer 108 is made of, for example, encapsulating glue and phosphor, or made of a fluorescent film. In different products, the light conversion layer 108 has different light colors. In some embodiments, it is necessary to form a liquid crystal display 300, and the light-emitting diode chip 100 provided in the present application can be used as a backlight source. At this time, the light conversion layer 108 is made into a white light conversion layer to form a white light-emitting diode chip. When forming a white light-emitting diode chip, the light-emitting diode chip 100 can convert the purple light or ultraviolet light emitted by the light-emitting epitaxy into white light, and the light conversion layer 108 is made of encapsulating glue and white phosphor. In other embodiments, for example, when a light-emitting diode display needs to be formed, the light conversion layer 108 is made into a red light conversion layer, a blue light conversion layer, and a green light conversion layer, so as to form a red light-emitting diode chip, a blue light-emitting diode chip, and a green light-emitting diode chip. When forming a red light-emitting diode chip, the light conversion layer 108 is made into a red light conversion layer, and the light-emitting diode chip 100 can convert the purple light or ultraviolet light emitted by the light-emitting epitaxy into red light, and the light conversion layer 108 is made of packaging glue and red phosphor. When forming a blue light-emitting diode chip, the light conversion layer 108 is made into a blue light conversion layer, and the light-emitting diode chip 100 can convert the purple light or ultraviolet light emitted by the light-emitting epitaxy into blue light, and the light conversion layer 108 is made of packaging glue and blue phosphor. When forming a green light-emitting diode chip, the light conversion layer 108 is made into a green light conversion layer, and the light-emitting diode chip 100 can convert the purple light or ultraviolet light emitted by the light-emitting epitaxy into green light, and the light conversion layer 108 is made of packaging glue and green phosphor. At this time, the red light-emitting diode chip forms a red sub-pixel, the blue light-emitting diode chip forms a blue sub-pixel, and the green light-emitting diode chip forms a green sub-pixel. Because the light-emitting epitaxial layer 102 of the red LED chip, the blue LED chip and the green LED chip are all the same light-emitting epitaxial layer 102, the same driving circuit can be used to drive the LED chips 100 of different colors, which can simplify the structure of the driving circuit.

[0050] like Figure 1As shown, in one embodiment of the present application, the light conversion layer 108 is arranged on the side of the substrate 101 relative to the light emitting epitaxial layer 102, and the coverage area of ​​the light conversion layer 108 is larger than the area of ​​the substrate 101, so as to convert the light emitted by the light emitting epitaxial layer 102 into light of other colors. The distance that the light conversion layer 108 exceeds the substrate 101 is, for example, 12nm to 50nm. A groove is formed between the light conversion layer 108 and the substrate 101 and the functional layer on the substrate 101. In the groove, an isolation layer 109 is also provided. The isolation layer 109 is arranged around the substrate 101 and the reflective layer 105 on the substrate 101, and covers the sides of the substrate 101 and the reflective layer 105. The isolation layer 109 is an opaque white anti-penetration layer or a black anti-penetration layer, wherein the material of the white anti-penetration layer or the black anti-penetration layer is, for example, a silicone encapsulation resin, an acrylate or an epoxy resin. The isolation layer 109 can cover the original light color of the light-emitting epitaxial layer 102 to prevent the light emitted by the light-emitting epitaxial layer 102 from mixing with the light emitted through the light conversion layer 108 , and can also prevent the light from emitting from the side of the LED chip 100 .

[0051] like Figure 3 As shown, the present application also provides a liquid crystal display panel, and the liquid crystal display panel 200 includes an array substrate 201 and a color filter substrate 202 arranged in a box. A glue frame 203 is arranged between the array substrate 201 and the color filter substrate 202, and the glue frame 203 adheres the color filter substrate 202 and the array substrate 201 together, and forms a box body space between the color filter substrate 202 and the array substrate 201, and the box body space can be filled with liquid crystal molecules to form a liquid crystal layer 204.

[0052] like Figure 3 As shown, in the present application, the array substrate 201 includes a glass substrate 2011 and a thin film transistor 2012 (Thin Film Transistor, TFT) disposed on the surface of the glass substrate 2011. Also connected to the thin film transistor 2012 is a transparent electrode layer 2051, which is located on a side of the thin film transistor 2012 close to the liquid crystal layer 204 to drive the liquid crystal molecules to rotate.

[0053] like Figure 3 As shown, in the present application, the color filter substrate 202 includes a glass substrate 2021, and a color filter 206 disposed on the surface of the glass substrate 2021. The color filter 206 may also include a black matrix layer 2061, and the black matrix layer 2061 is disposed on the glass substrate 2021. The black matrix layer 2061 can prevent light leakage. The black matrix layer 2061 is, for example, a photosensitive resin composition, that is, when forming the black matrix layer 2061, the photosensitive resin composition can be first coated on the glass substrate 2021, and then the black matrix layer 2061 can be formed by exposure and development.

[0054] like Figure 3 As shown, in the present application, the color filter 206 also includes a filter layer 2062, which is located on the glass substrate 2021 and covers the black matrix layer 2061. The filter layer 2062 may include a first filter layer 2063, a second filter layer 2064 and a third filter layer 2065. The first filter layer 2063 may be a red filter layer, the second filter layer 2064 may be a green filter layer, and the third filter layer 2065 may be a blue filter layer. The liquid crystal display panel 200 may separate the red, green and blue primary colors of light through the first filter layer 2063, the second filter layer 2064 and the third filter layer 2065 to display a color image. The first filter layer 2063, the second filter layer 2064 and the third filter layer 2065 are respectively located between the black matrix layer 2061, for example, the first filter layer and the third filter layer are located on both sides of the second filter layer 2064. The first filter layer 2063 and the second filter layer 2064 are in contact with each other and cover the same black matrix layer 2061. Figure 3 It can be seen that the first filter layer 2063 and the second filter layer 2064 simultaneously cover the leftmost black matrix layer 2061. Therefore, it can be concluded that the black matrix layer 2061 can connect the first filter layer 2063 and the second filter layer 2064, that is, connect the red filter layer and the green filter layer. The black matrix layer 2061 can connect the second filter layer 2064 and the third filter layer 2065, that is, connect the green filter layer and the blue filter layer; the black matrix layer 2061 can connect the third filter layer 2065 and the first filter layer 2063, that is, connect the blue filter layer and the red filter layer. The transmittance of the first filter layer 2063 is less than that of the second filter layer 2064, but greater than that of the third filter layer 2065. The transmittance of the second filter layer 2064, the first filter layer 2063 and the third filter layer 2065 is, for example, 3.7:1.4:1.

[0055] like Figure 3 As shown, in this embodiment, a transparent electrode layer 2052 is further disposed on the color filter 206. The transparent electrode layer 2052 is located on a side of the color filter 206 close to the liquid crystal to drive the liquid crystal to rotate.

[0056] like Figure 3As shown, in one embodiment of the present application, an anti-reflection plate 208 is provided between the color filter substrate 202 and the liquid crystal layer 204. The edge of the anti-reflection plate 208 overlaps with the edge of the color filter substrate 202 and extends out of the liquid crystal layer 204. Specifically, the refractive index of the anti-reflection plate 208 is, for example, 1.55 to 1.7, and is, for example, 1.55 or 1.59, and is, for example, 1.65 or 1.7. The anti-reflection plate 208 can be made of one or more materials such as aluminum oxide (Al2O3), cerium trifluoride (CeF3), lanthanum fluoride (LaF3) or yttrium fluoride (YF3). When forming the anti-reflection plate 208, one or more materials such as aluminum oxide (Al2O3), cerium trifluoride (CeF3), lanthanum fluoride (LaF3) or yttrium fluoride (YF3) can be evaporated or sputtered to form the anti-reflection plate 208. The thickness of the antireflection plate 208 can be set according to the requirements, for example, 10 nm to 300 nm. In some embodiments, the thickness of the antireflection plate 208 is, for example, 10 nm, 20 nm, 50 nm, or 90 nm. In other embodiments, the thickness of the antireflection plate 208 is, for example, 100 nm, 150 nm, 200 nm, or 300 nm.

[0057] like Figure 3 As shown, in the present application, an anti-reflection plate 208 is disposed between the color filter substrate 202 and the liquid crystal layer 204. The refractive index of the anti-reflection plate 208 is similar to that of the liquid crystal layer 204, which can increase the light extraction effect of the liquid crystal layer 204 and reduce energy consumption.

[0058] like Figure 3 and Figure 4 As shown, in one embodiment of the present application, the glue frame 203 adheres the color filter substrate 202 and the array substrate 201 to encapsulate the liquid crystal layer 204 between the color filter substrate 202 and the array substrate 201. Specifically, the glue frame 203 is arranged between the anti-reflection plate 208 and the array substrate 201. In the present application, in the cross-sectional direction of the liquid crystal display panel, the width of the glue frame 203 gradually increases from the side close to the color filter substrate 202 to the side close to the array substrate 201. In the display surface direction of the liquid crystal display panel, on both sides of the liquid crystal display panel, from the side close to the top of the liquid crystal display panel to the side close to the bottom of the liquid crystal display panel, the width of the glue frame 203 gradually increases. The width of the glue frame 203 at the top of the liquid crystal display panel and the width of the glue frame 203 at the bottom of the liquid crystal display panel are fixed values, and the width of the glue frame 203 at the top of the liquid crystal display panel is smaller than the width of the glue frame 203 at the bottom of the liquid crystal display panel. Among them, as Figure 4 As shown, the top of the liquid crystal display panel is the side where the image displayed faces upward when the liquid crystal display panel is working, and the bottom of the liquid crystal display panel is the side where the image displayed faces downward when the liquid crystal display panel is working.

[0059] like Figure 3As shown, in one embodiment of the present application, the glue frame 203 is located outside the liquid crystal layer 204 to encapsulate the liquid crystal layer 204. In the cross-sectional direction of the liquid crystal display panel, on the side close to the liquid crystal layer 204, the side wall of the glue frame 203 is perpendicular to the plane where the anti-reflection plate 208 and the array substrate 201 are located, and on the side away from the liquid crystal layer 204, the thickness of the side wall of the glue frame 203 gradually increases. Therefore, in the cross-sectional direction of the liquid crystal display panel, the glue frame 203 is arranged in a right triangle or a right trapezoid. On the side close to the liquid crystal layer 204, the side wall of the glue frame 203 is perpendicular to the plane where the anti-reflection substrate and the array substrate 201 are located, which can prevent the liquid crystal inside the liquid crystal layer 204 from being stuck at the angle formed by the glue frame 203, the anti-reflection substrate and the array substrate 201. On the side away from the liquid crystal layer 204, the thickness of the side wall of the glue frame 203 gradually increases, which can ensure the stability of the glue frame 203 and avoid the pressure on the glue frame 203 caused by the stress caused by the depth of the liquid crystal.

[0060] like Figure 4 As shown, in one embodiment of the present application, in the display direction of the liquid crystal display panel, the width of the plastic frame 203 at the top and bottom of the liquid crystal display panel is a fixed value, and the width of the plastic frame 203 at the top of the liquid crystal display panel is greater than the width of the plastic frame 203 at the bottom of the liquid crystal display panel. On the side of the liquid crystal display panel, and from the side close to the top of the liquid crystal display panel to the side close to the bottom of the liquid crystal display panel, the width of the plastic frame 203 gradually increases. And in the present application, in the display direction of the liquid crystal display panel, on the side close to the liquid crystal layer 204, the side wall of the plastic frame 203 is perpendicular to the plane where the anti-reflection substrate and the array substrate 201 are located, and on the side away from the liquid crystal layer 204, the thickness of the side wall of the plastic frame 203 gradually increases. In the display direction of the liquid crystal display panel, the plastic frame 203 is arranged in a right triangle or a right trapezoid.

[0061] like Figure 3 and Figure 4 As shown, in some embodiments of the present application, in the cross-sectional direction, on the side away from the liquid crystal layer 204, the sidewall thickness of the plastic frame 203 gradually increases, and the angle between the sidewall of the plastic frame 203 and the array substrate 201 is, for example, in the range of 75° to 89°. In the display direction of the liquid crystal display panel, on the side away from the liquid crystal layer 204, the sidewall thickness of the plastic frame 203 gradually increases, and the angle between the sidewall of the plastic frame 203 and one side of the bottom of the display panel is, for example, in the range of 75° to 89°.

[0062] like Figure 3 and Figure 4 As shown, in some embodiments of the present application, the plastic frame 203 can be made of opaque material, such as black plastic or other dark materials. Specifically, the plastic frame 203 can be made of one or more materials selected from polyethylene resin, silica gel or epoxy molding compound.

[0063] like Figure 3 As shown, in the present application, a water-repellent film 209 is provided on the side of the plastic frame 203 away from the liquid crystal layer 204. The water-repellent film 209 covers the side of the plastic frame 203 away from the liquid crystal layer 204, and the water-repellent film 209 is smoothly connected to the array substrate 201 and the anti-reflection plate 208. In one embodiment of the present application, the water-repellent film 209 can be made of aluminum nitride (AlN) or silicon nitride (SiN). Specifically, the water-repellent film 209 can be formed by evaporation or sputtering. The thickness of the water-repellent film 209 is, for example, 100nm to 5000nm. In some embodiments, the thickness of the water-repellent film 209 is, for example, 100nm, 300nm, 500nm or 800nm. In other embodiments, the thickness of the water-repellent film 209 is, for example, 1000nm, 3000nm or 5000nm.

[0064] like Figure 3 As shown, in the present application, in the cross-sectional direction of the liquid crystal display panel, the thickness of the water-repellent film 209 remains constant from the side close to the color filter substrate 202 to the side close to the array substrate 201. Therefore, the water-repellent film 209 with uniform thickness forms a support with the plastic frame 203, thereby increasing the strength of the plastic frame 203.

[0065] like Figure 4 As shown, in the present application, in the display direction of the liquid crystal display panel, on the side of the liquid crystal display panel, in order to adjust the overall shape of the liquid crystal display panel, the inner side of the waterproof film 209 is attached to the rubber frame 203, and the outer side forms a rectangle that coincides with the outline of the liquid crystal display panel.

[0066] like Figure 3 As shown, a light shielding layer 210 is provided between the anti-reflection plate 208 and the liquid crystal layer 204. The light shielding layer 210 is made of opaque material, such as black or other dark materials. The edge of the light shielding layer 210 is flush with the edge of the anti-reflection plate 208, and covers the glue frame 203 and the waterproof film 209. In this way, the light shielding layer 210 can completely cover the edge of the array substrate 201, and the glue frame 203 completely blocks the edge of the color filter substrate 202. When light passes through the array substrate 201, the light that is refracted or scattered and reaches the edge of the array substrate 201 will be blocked by the glue frame 203 made of light shielding material, and a small amount of light that passes through will be blocked by the light shielding layer 210. It can avoid the situation that light leakage still exists at the edge of the color filter substrate 202 due to the problem of cutting processing accuracy, thereby avoiding the light leakage caused by the influence of processing accuracy.

[0067] like Figure 3As shown, in the present application, a polarizer 207 is provided on the side of the array substrate 201 away from the color filter substrate 202, and on the side of the color filter substrate 202 away from the array substrate 201. The polarizer 207 is provided on the array substrate 201 and the color filter substrate 202, so that light can pass in one direction. At this time, when the backlight emits light, the light passes through the polarizer 207 on the array substrate 201 and irradiates the array substrate 201, and passes through the array substrate 201. After being rotated by the liquid crystal, the light is transmitted from the color filter substrate 202 and the polarizer 207 on the color filter substrate 202, thereby displaying the picture.

[0068] like Figure 3 As shown, in some embodiments, the color filter substrate 202 is usually a substrate facing the user, in order to ensure the aesthetic appearance of the entire display screen, display or display device. The polarizer 207 on the color filter substrate 202 can extend to the edge of the color filter substrate 202. In this way, the side of the color filter substrate 202 facing the user will not have an abrupt step due to the presence of the polarizer 207, which can improve the aesthetics of the display screen, display or display device. Of course, the polarizer 207 set on the array substrate 201 can only cover the area of ​​the array substrate 201 located inside the rubber frame, so that the material of the polarizer 207 can be saved and the cost can be reduced.

[0069] like Figure 5 As shown, the present application also provides a liquid crystal display 300, which includes a back panel 301, a backlight source disposed in the back panel 301, and a liquid crystal display panel 200 fixed on a housing.

[0070] like Figure 5 As shown, in the present application, a plurality of LED chips 100 are mounted on the bottom wall of the back plate 301 to form a backlight source. In the present embodiment, the LED chip 100 is a white LED chip. Figure 1 The light emitting diode chip 100 shown is used as a backlight source to increase the brightness of the display panel and avoid problems such as lamp shadow.

[0071] like Figure 5 As shown, in the present application, a plurality of diffusers 304 and optical films 305 are arranged on the back plate 301 on the plurality of light-emitting diode chips 100. The light of the light-emitting diode chip 100 sequentially passes through the diffuser 304 and the optical film 305 to the back side of the liquid crystal display panel 200. The diffuser 304 diffuses the light emitted by the light-emitting diode chip 100 to make the light more uniform. At the same time, the diffuser 304 supports the optical film 305 arranged thereon.

[0072] like Figure 5As shown, in the present application, the optical film 305 is arranged on the diffuser plate 304 to diffuse and brighten the light, so as to obtain uniform and bright light. Specifically, the optical film 305 includes a diffuser, a brightening film and a composite film. The optical film 305 is combined with one or more different films in different combinations to obtain different brightness gains.

[0073] like Figure 5 As shown, in the present application, the liquid crystal display panel 200 is covered on the optical film 305. On the bottom wall of the back plate 301, a circuit board 306 can also be installed. The circuit board 306 can be a PCB substrate or a flexible circuit board 306, and a driving circuit can be set on the circuit board 306. The circuit board 306 is electrically connected to the liquid crystal display panel 200 and the backlight source to adjust the brightness of the backlight and control the display screen of the liquid crystal display panel 200.

[0074] In summary, the present application provides a liquid crystal display panel and a liquid crystal display, including an array substrate, a color filter substrate arranged in a box with the array substrate, the color filter substrate and the array substrate are pasted to form a glue frame of a box body space, and a liquid crystal layer arranged in the box body space. In the present application, the stability of the liquid crystal display panel can be increased by limiting the shape of the glue frame.

[0075] The above description is only a preferred embodiment of the present application and an explanation of the technical principles used. Those skilled in the art should understand that the scope of application involved in the present application is not limited to the technical solution formed by a specific combination of the above-mentioned technical features, but should also cover other technical solutions formed by any combination of the above-mentioned technical features or their equivalent features without departing from the application concept, such as a technical solution formed by replacing the above-mentioned features with (but not limited to) technical features with similar functions disclosed in this application.

[0076] Except for the technical features described in the specification, the remaining technical features are known technologies to those skilled in the art. In order to highlight the innovative features of this application, the remaining technical features will not be described here in detail.

Claims

1. A liquid crystal display, characterized in that: The liquid crystal display comprises: Back panel; A light emitting diode chip is arranged on the bottom wall of the back plate, wherein the light emitting diode chip comprises a substrate, a light emitting epitaxial layer arranged on the substrate, and a light conversion layer arranged on the light emitting side of the light emitting diode chip; A diffusion plate, arranged on the light emitting diode chip; an optical film disposed on the diffusion plate; and A liquid crystal display panel is provided on the optical film, and the liquid crystal display panel comprises: An array substrate; A color filter substrate is arranged in a box with the array substrate; A glue frame is used to adhere the color filter substrate and the array substrate to form a box space, and the width of the glue frame gradually increases from a side close to the color filter substrate to a side close to the array substrate in the cross-sectional direction of the liquid crystal display panel; and A liquid crystal layer is arranged in the box space; Wherein, in the cross-sectional direction of the liquid crystal display panel, on the side close to the liquid crystal layer, the side wall of the plastic frame is arranged perpendicular to the plane where the array substrate is located; In the cross-sectional direction of the liquid crystal display panel, on the side away from the liquid crystal layer, the angle between the side wall of the plastic frame and the array substrate is in the range of 75° to 89°; In the display surface direction of the liquid crystal display panel, the width of the plastic frame gradually increases from the top side close to the liquid crystal display panel to the bottom side close to the liquid crystal display panel.

2. The liquid crystal display according to claim 1, characterized in that: A buffer layer is also arranged on the substrate, and the buffer layer is an aluminum nitride layer or an aluminum gallium nitride layer.

3. The liquid crystal display according to claim 1, characterized in that: In the display surface direction of the liquid crystal display panel, the width of the plastic frame at the top of the liquid crystal display panel is smaller than the width of the plastic frame at the bottom of the liquid crystal display panel.

4. The liquid crystal display according to claim 1, characterized in that: A water-resistant film is provided on the side of the rubber frame away from the liquid crystal layer. In the cross-sectional direction of the liquid crystal display panel, the thickness of the water-resistant film remains unchanged. In the display surface direction of the liquid crystal display panel, the inner side of the water-resistant film is in contact with the rubber frame, and the outer side forms a rectangle that coincides with the outline of the liquid crystal display panel.

5. The liquid crystal display according to claim 4, characterized in that: An anti-reflection plate is arranged between the color filter substrate and the liquid crystal layer.

6. The liquid crystal display according to claim 5, characterized in that: The refractive index of the antireflection plate is 1.55-1.

7.

7. The liquid crystal display according to claim 6, characterized in that: A light shielding layer is arranged between the anti-reflection plate and the glue frame, and the light shielding layer covers the glue frame and the water-resistant film.

8. The liquid crystal display according to claim 1, characterized in that: The substrate is a transparent substrate.

9. The liquid crystal display according to claim 1, characterized in that: The light-emitting epitaxial layer includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer which are stacked.

10. The liquid crystal display according to claim 1, characterized in that: The light-emitting epitaxial layer adopts a modulation-doped GaN / AlGaN superlattice structure.

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