Temperature compensated equalizer MMIC

Abstract

The present application belongs to the technical field of microwave integrated circuits, and specifically provides a temperature compensation equalizer MMIC to meet the design requirements of positive slope gain in a wideband high-power amplifier, and to solve the problem of gain reduction caused by temperature rise in the wideband high-power amplifier. The present application comprises a temperature compensation module and an equalizer module, wherein the equalizer module is connected between a radio frequency input end and a radio frequency output end to realize the equalization compensation function of the circuit; and the temperature compensation module outputs a temperature compensation signal to the direct current bias end of the equalizer module to realize the temperature compensation function of the circuit. In summary, the present application sets an equalizer module between the radio frequency input port and the output port to compensate the high-frequency gain of the circuit; at the same time, a temperature compensation module is designed to realize gain temperature compensation; finally, the present application increases the gain flatness of the amplifier in frequency and reduces the temperature sensitivity of the amplifier in temperature.

Description

Technical Field

[0001] The present invention belongs to the technical field of microwave integrated circuits, and in particular provides a temperature compensation equalizer MMIC. Background Art

[0002] In the RF / microwave field, amplifier design faces numerous challenges. For example, a positive gain slope is often desired in design. However, achieving such a slope is difficult for broadband, high-power amplifiers in practical applications. Therefore, an equalizer must be provided at the front end of the amplifier in the RF / microwave channel to ensure that the overall gain is as positive or flat as possible. Furthermore, broadband, high-power amplifiers generate a significant amount of heat during operation. As the temperature rises, the characteristics of various components within the amplifier, such as transistors, change, reducing the amplifier gain. To address these challenges, the present invention provides a temperature-compensated equalizer (MMIC) to integrate temperature compensation and gain compensation functions. Summary of the Invention

[0003] The present invention aims to provide a temperature-compensated equalizer MMIC to address numerous issues in the prior art. The invention incorporates an equalizer module between the RF input and output ports to compensate for the circuit's high-frequency gain. A temperature compensation module is also designed to adaptively adjust the equalizer's insertion loss based on temperature.

[0004] To achieve the above object, the technical solution adopted by the present invention is:

[0005] A temperature-compensated equalizer MMIC is characterized by comprising: a temperature compensation module and an equalizer module, wherein the equalizer module is connected between a radio frequency input terminal and a radio frequency output terminal to implement a circuit equalization compensation function; and the temperature compensation module outputs a temperature compensation signal to a DC bias terminal of the equalizer module to implement the circuit's temperature compensation function.

[0006] Furthermore, the temperature compensation module includes: resistors R1 to R3, diodes D1 to D3 and an enhanced logic field effect transistor LEF1; wherein, the gate of the enhanced logic field effect transistor LEF1 is grounded through the resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to the DC power supply VDC through the resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded through the resistor R3; the anode of the diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of the diode D1 is connected to the anode of the diode D2, the cathode of the diode D2 is connected to the anode of the diode D3, and the cathode of the diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and the resistor R3, and output to the DC bias terminal of the equalizer module.

[0007] Furthermore, the resistors R1 to R3 are all thermistors.

[0008] Furthermore, the DC power supply VDC is -5V.

[0009] Furthermore, the equalizer module adopts a switch π-type equalizer.

[0010] Furthermore, the equalizer module includes: resistors R4~R7, inductors L1~L2, switches SW1~SW2 and capacitor C1; wherein the gate of switch SW1 is connected to the gate of switch SW2 and connected to resistor R4, and the other end of resistor R4 serves as a DC bias end; capacitor C1 is connected between the drain of switch SW1 and the drain of switch SW2, resistor R7 and capacitor C1 are connected in parallel, and the two ends of the parallel connection serve as the RF input end and the RF output end; the source of switch SW1 is connected to ground through resistor R5 and inductor L1 in sequence, and the source of switch SW2 is connected to ground through resistor R6 and inductor L2 in sequence.

[0011] Based on the above technical solution, the beneficial effects of the present invention are:

[0012] The present invention provides a temperature-compensated equalizer MMIC, which is a monolithic integrated circuit integrating a new temperature compensation structure and a switching equalizer. The temperature compensation module adopts a layout design of multiple temperature-sensitive resistors, diodes, and transistors, so that the control voltage varies regularly with temperature. The equalizer module adopts a switching π-type equalizer structure with a high-frequency compensation structure, which can make the attenuation of the signal path show a positive slope trend with low high frequency and high low frequency. At the same time, the on-off degree of the switch is controlled by the control voltage output by the temperature compensation module to achieve overall attenuation control at different temperatures, that is, the attenuation is small at high temperature and large at low temperature. In summary, the advantages of the present invention are: it solves the difficulty of achieving positive slope gain in the design of a broadband high-power amplifier on a single chip, and overcomes the problem of amplifier gain reduction caused by changes in the characteristics of various components such as transistors in the amplifier due to temperature increase, thereby increasing gain flatness in frequency and reducing the temperature sensitivity of the amplifier in temperature. BRIEF DESCRIPTION OF THE DRAWINGS

[0013] Figure 1 This is a circuit schematic diagram of the temperature compensation equalizer MMIC provided by the present invention.

[0014] Figure 2 Graph showing the input and output voltage standing wave ratio results of the temperature-compensated equalizer MMIC at various temperatures in an embodiment of the present invention.

[0015] Figure 3 FIG. 1 is a graph showing the insertion loss of the temperature-compensated equalizer MMIC according to an embodiment of the present invention as it changes with frequency at various temperatures.

[0016] Figure 4 FIG. 1 is a graph showing the insertion loss of the temperature-compensated equalizer MMIC according to an embodiment of the present invention as it changes with temperature at various frequencies. DETAILED DESCRIPTION

[0017] In order to make the purpose, technical solutions and beneficial effects of the present invention more clearly understood, the present invention is further described in detail below with reference to the accompanying drawings and embodiments.

[0018] This embodiment provides a temperature compensation equalizer MMIC, such as Figure 1 As shown, it includes: a temperature compensation module and an equalizer module, wherein the equalizer module is connected between the RF input terminal and the RF output terminal to realize the equalization compensation function of the circuit; the temperature compensation module outputs a temperature compensation signal to the DC bias terminal of the equalizer module to realize the temperature compensation function of the circuit.

[0019] Furthermore, the temperature compensation module includes: resistors R1, R2, and R3, diodes D1, D2, and D3, and an enhanced logic field effect transistor LEF1; wherein the gate of the enhanced logic field effect transistor LEF1 is grounded via resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to a DC power supply VDC via resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded via resistor R3; the anode of diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of diode D1 is connected to the anode of diode D2, the cathode of diode D2 is connected to the anode of diode D3, and the cathode of diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and resistor R3 and output to the DC bias terminal of the equalizer module;

[0020] Furthermore, the resistors R1, R2, and R3 are all thermistors;

[0021] Furthermore, the DC power supply VDC is -5V;

[0022] In terms of working principle, the temperature compensation module uses temperature-sensitive resistors and diodes to control the gate voltage of the enhanced logic field-effect transistor LEF1 through voltage division by the resistors and diodes, thereby adaptively adjusting the drain current of the enhanced logic field-effect transistor LEF1 according to the temperature. The voltage is then divided by resistors on the drain and source paths of the enhanced logic field-effect transistor LEF1, and a temperature compensation signal is output to control the DC bias of the equalizer module.

[0023] Furthermore, the equalizer module includes: resistors R4, R5, R6, R7, inductors L1, L2, switches SW1, SW2, and capacitor C1; wherein the gate of the switch SW1 is connected to the gate of the switch SW2 and is connected to the resistor R4, and the other end of the resistor R4 serves as a DC bias end; the capacitor C1 is connected between the drain of the switch SW1 and the drain of the switch SW2, the resistor R7 and the capacitor C1 are connected in parallel, and the two ends of the parallel connection serve as the RF input end and the RF output end; the source of the switch SW1 is connected to ground through the resistor R5 and the inductor L1 in sequence, and the source of the switch SW2 is connected to ground through the resistor R6 and the inductor L2 in sequence.

[0024] In terms of working principle, the equalizer module is a switched π-type equalizer composed of several transistors, resistors, capacitors and inductors. Among them, the parallel resistor R7 and capacitor C1 constitute the main path between the RF input and RF output ends, the source of the parallel transistor is connected in series with the resistor and inductor to the ground, and the gate of the parallel transistor is connected to the temperature compensation signal output by the temperature compensation module. The temperature compensation signal is used to control the DC bias of the equalizer module.

[0025] The beneficial effects of the present invention are described in detail below in conjunction with simulation tests.

[0026] The temperature-compensated equalizer MMIC proposed in this embodiment is designed based on a gallium arsenide process. Its operating frequency is 3 GHz to 20 GHz, the bandwidth is 17 GHz, the center point is 11.5 GHz, the relative bandwidth is 148%, the compensation range is -55°C to 125°C, and the compensation amount is 1 dB. At 25°C, the insertion loss at 3 GHz is 4.19 dB, and the insertion loss at 20 GHz is 2.53 dB.

[0027] More specifically, Figure 2 The figure shows the input and output voltage standing wave ratio of the temperature compensated equalizer MMIC at various temperatures. The test temperature is set at intervals of 10°C within the range of -55°C to 125°C, namely -55°C, -45°C, ..., -5°C, 5°C, ..., 115°C, and 125°C, a total of 19 test temperatures. Figure 2 The figure shows the input and output voltage standing wave ratios of the temperature-compensated equalizer MMIC at 19 test temperatures from top to bottom. As can be seen from the figure, the voltage standing wave ratio is below 1.4 at each temperature from 3 to 20 GHz. Figure 3 The figure shows the insertion loss of the temperature compensated equalizer MMIC as it changes with frequency at various temperatures. Figure 3 From bottom to top, the insertion loss of the temperature-compensated equalizer MMIC at 19 test temperatures is shown. As can be seen from the figure, the insertion loss shows a positive slope change trend at all temperatures, which is consistent with the characteristic that the equalizer can compensate for gain; Figure 4The figure shows the insertion loss of the temperature-compensated equalizer MMIC at various frequencies as it changes with temperature. A total of 10 test frequencies are set at equal intervals in the range of 3 GHz to 20 GHz, namely 3 GHz, ..., 20 GHz. Figure 4 From bottom to top, the insertion loss of the temperature-compensated equalizer MMIC at 10 test frequencies varies with temperature. As can be seen from the figure, the insertion loss at all frequencies decreases with increasing temperature, meeting the design requirements of temperature compensation.

[0028] In summary, the present invention provides a temperature-compensated equalizer MMIC that simultaneously implements the functions of positive slope gain and temperature compensation in broadband high-power amplifier design on a single chip, thereby increasing gain flatness over frequency and reducing the temperature sensitivity of the amplifier over temperature.

[0029] The above description is only a specific embodiment of the present invention. Any feature disclosed in this specification, unless otherwise stated, can be replaced by other equivalent or alternative features with similar purposes; all disclosed features, or all steps in the methods or processes, except for mutually exclusive features and / or steps, can be combined in any way.

Claims

1. A temperature-compensated equalizer MMIC, characterized in that: include: A temperature compensation module and an equalizer module, wherein the equalizer module is connected between the RF input terminal and the RF output terminal to realize the circuit's equalization compensation function; the temperature compensation module outputs a temperature compensation signal to the DC bias terminal of the equalizer module to realize the circuit's temperature compensation function; The temperature compensation module includes: resistors R1-R3, diodes D1-D3, and an enhanced logic field effect transistor LEF1; wherein the gate of the enhanced logic field effect transistor LEF1 is grounded via resistor R1, the source of the enhanced logic field effect transistor LEF1 is connected to a DC power supply VDC via resistor R2, and the drain of the enhanced logic field effect transistor LEF1 is grounded via resistor R3; the anode of diode D1 is connected to the gate of the enhanced logic field effect transistor LEF1, the cathode of diode D1 is connected to the anode of diode D2, the cathode of diode D2 is connected to the anode of diode D3, and the cathode of diode D3 is connected to the DC power supply VDC; a temperature compensation signal is drawn between the drain of the enhanced logic field effect transistor LEF1 and resistor R3, and output to the DC bias terminal of the equalizer module; The equalizer module includes: resistors R4-R7, inductors L1-L2, switches SW1-SW2 and capacitor C1; wherein the gate of switch SW1 is connected to the gate of switch SW2 and connected to resistor R4, and the other end of resistor R4 serves as a DC bias terminal; capacitor C1 is connected between the drain of switch SW1 and the drain of switch SW2, resistor R7 and capacitor C1 are connected in parallel, and the two ends of the parallel connection serve as the RF input terminal and the RF output terminal; the source of switch SW1 is connected to ground through resistor R5 and inductor L1 in sequence, and the source of switch SW2 is connected to ground through resistor R6 and inductor L2 in sequence.

2. The temperature-compensated equalizer MMIC according to claim 1, characterized in that: The resistors R1 to R3 are all thermistors.

3. The temperature-compensated equalizer MMIC according to claim 1, wherein: The equalizer module adopts a switch π-type equalizer.

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