Light emitting diode and light emitting device

By distributing the edge end points of the insulating layer within the connecting segment of the metal reflective layer, the metal reflective layer covers the insulating layer, solving the problem of "serrated" defects in the edges of the insulating layer, and improving the quality and epitaxial yield of the light emitting diodes.

CN119789641AActive Publication Date: 2025-04-08TIANJIN SANAN OPTOELECTRONICS
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Patent Information

Application Number
CN202411754637.X
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Filing Date
2024-12-02
Publication Date
2025-04-08
Estimated Expiration
2044-12-02

AI Technical Summary

Technical Problem

In the process of preparing a high-power horizontal structure, the edges of the insulating layer are prone to be layered, showing "serrated" defects, affecting the quality of the light emitting diodes.

Method used

By distributing the edge end points of the upper surface of the insulating layer at the vertical projection point of the horizontal plane within the first connecting line segment of the vertical projection of the upper surface of the metal reflective layer, the metal reflective layer can cover the insulating layer and avoiding "serrated" defects at the edge of the insulating layer.

Benefits of technology

It effectively avoids the problem of "jagged" defects in the edge of the insulating layer during the preparation process, and improves the quality and epitaxial yield of the light emitting diode.

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Abstract

The invention relates to the technical field of semiconductor manufacturing, in particular to a light-emitting diode which comprises a semiconductor lamination layer, an insulating layer and a metal reflecting layer, the semiconductor lamination layer sequentially comprises a first semiconductor layer, a light-emitting layer and a second semiconductor layer in the direction from the upper surface to the lower surface, and the insulating layer is arranged on the lower surface of the semiconductor lamination layer. The insulating layer is provided with a first hole, the metal reflecting layer is arranged on the lower surface of the semiconductor lamination layer and wraps the insulating layer, and part of the metal reflecting layer is filled in the first hole. The vertical projection points of the edge end points of the upper surface of the insulating layer on the horizontal plane are distributed in the first connecting line segment of the vertical projection of the edge end points of the upper surface of the metal reflecting layer on the horizontal plane. By means of the arrangement, the problem that the edge of the insulating layer has a zigzag defect in the preparation process can be solved, damage is avoided, and the quality of the light-emitting diode is improved.
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Citation Information

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